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DLA10IM800UC-TRL IXYS DLA10IM800UC.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 10A; DPAK; Ufmax: 1.16V; Ifsm: 120A; 75W
Mounting: SMD
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.16V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Power dissipation: 75W
Kind of package: reel; tape
Type of diode: rectifying
Case: DPAK
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DCG10P1200HR DCG10P1200HR IXYS DCG10P1200HR.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 12.5A; ISO247™; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12.5A
Semiconductor structure: double series
Case: ISO247™
Max. forward voltage: 2.2V
Max. forward impulse current: 750A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
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2+48.33 EUR
10+47.55 EUR
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MCB20P1200LB-TUB MCB20P1200LB-TUB IXYS MCB20P1200LB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Case: SMPD-B
Semiconductor structure: double series
Drain-source voltage: 1.2kV
Drain current: 25.5A
On-state resistance: 98mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
Gate charge: 62nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Mounting: SMD
Produkt ist nicht verfügbar
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CLA40P1200FC CLA40P1200FC IXYS CLA40P1200FC.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 50/80mA; THT; tube; Ifsm: 555A
Case: ISOPLUS i4-pac™ x024a
Max. off-state voltage: 1.2kV
Max. load current: 63A
Load current: 40A
Semiconductor structure: double series
Gate current: 50/80mA
Max. forward impulse current: 555A
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
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DMA30P1200HB DMA30P1200HB IXYS media?resourcetype=datasheets&itemid=9e8e9c31-8e39-46b5-8db7-7500dfb48089&filename=littelfuse-power-semiconductors-dma30p1200hb-datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 370A; TO247-3
Case: TO247-3
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: double series
Max. forward impulse current: 370A
Kind of package: tube
Type of diode: rectifying
Mounting: THT
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IXDI609SIA IXDI609SIA IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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24+3.00 EUR
36+2.02 EUR
50+1.46 EUR
53+1.37 EUR
300+1.33 EUR
500+1.32 EUR
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IXDI609YI IXDI609YI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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24+3.07 EUR
25+2.90 EUR
100+2.79 EUR
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IXDI609SI IXDI609SI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDI609PI IXDI609PI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDI609SIATR IXDI609SIATR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDI609SITR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXFH120N20P IXFH120N20P IXYS IXFH(K)120N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Technology: HiPerFET™; Polar™
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CLA30E1200HB CLA30E1200HB IXYS CLA30E1200HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 28mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 28mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.3kA
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13+5.83 EUR
21+3.56 EUR
22+3.36 EUR
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CPC3701CTR CPC3701CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE7919FFA760F104746&compId=CPC3701.pdf?ci_sign=3b686c50781704a72018b86754c7a8d41bba5ce4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Case: SOT89
Drain-source voltage: 60V
Drain current: 0.6A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Mounting: SMD
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IXFN48N60P IXFN48N60P IXYS IXFN48N60P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; Idm: 110A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 625W
Case: SOT227B
On-state resistance: 0.14Ω
Gate charge: 150nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Pulsed drain current: 110A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; PolarHV™
Gate-source voltage: ±40V
Semiconductor structure: single transistor
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IXFQ28N60P3 IXFQ28N60P3 IXYS IXFH(Q)28N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
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IXFX48N60P IXFX48N60P IXYS IXF_48N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 48A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHV™
Gate-source voltage: ±30V
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DPG15I300PA DPG15I300PA IXYS Littelfuse-Power-Semiconductors-DPG15I300PA-Datasheet?assetguid=31AF2C96-8FF5-49B1-80B7-FE9209F6A1EA Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15A; tube; Ifsm: 240A; TO220AC; 90W
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AC
Max. off-state voltage: 300V
Max. forward voltage: 1.26V
Load current: 15A
Semiconductor structure: single diode
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23+3.22 EUR
45+1.62 EUR
47+1.53 EUR
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DPG15I400PM DPG15I400PM IXYS Littelfuse-Power-Semiconductors-DPG15I400PM-Datasheet?assetguid=35351A1B-7A9F-4540-9789-7981B9CF6EC1 Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 190A; TO220FP-2; 35W
Reverse recovery time: 45ns
Max. forward impulse current: 190A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.39V
Load current: 15A
Semiconductor structure: single diode
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67+1.07 EUR
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DPG15I200PA DPG15I200PA IXYS Littelfuse-Power-Semiconductors-DPG15I200PA-Datasheet?assetguid=54180CEE-BE58-4F2E-B23D-CC4C70F44A3F Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 240A; TO220AC; 90W
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AC
Max. off-state voltage: 200V
Max. forward voltage: 1.26V
Load current: 15A
Semiconductor structure: single diode
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IXTJ6N150 IXTJ6N150 IXYS IXTJ6N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 125W; ISO247™; 1.5us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 125W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 3.85Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1.5µs
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IXXH100N60B3 IXXH100N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB4A5F5037D820&compId=IXXH100N60B3.pdf?ci_sign=0b1678af7c3157780613381fd45916184563f06e Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Pulsed collector current: 480A
Turn-on time: 92ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
Gate charge: 143nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 100A
Produkt ist nicht verfügbar
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MDD95-22N1B MDD95-22N1B IXYS MDD95-22N1B-dte.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 120A; TO240AA; Ufmax: 1.13V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 180A
Max. forward voltage: 1.13V
Load current: 120A
Semiconductor structure: double series
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2+48.33 EUR
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MDD255-12N1 MDD255-12N1 IXYS MDD255-xxN1-DTE.pdf MDD255-xxN1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 270Ax2; Y1-CU; Ufmax: 1.4V
Max. off-state voltage: 1.2kV
Load current: 270A x2
Semiconductor structure: double series
Max. forward impulse current: 8.4kA
Case: Y1-CU
Max. forward voltage: 1.4V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
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MDD95-12N1B IXYS MDD95-12N1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 120A; TO240AA; Ufmax: 1.13V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 180A
Max. forward voltage: 1.13V
Load current: 120A
Semiconductor structure: double series
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MDD56-08N1B IXYS MDD56-08N1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 800V; If: 71A; TO240AA; Ufmax: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.14V
Load current: 71A
Semiconductor structure: double series
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MDD56-14N1B IXYS MDD56-14N1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 71A; TO240AA; Ufmax: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.14V
Load current: 71A
Semiconductor structure: double series
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MDD56-18N1B IXYS PCN210930_TO240 screw.pdf MDD56-18N1B.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 71A; TO240AA; Ufmax: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 1.8kV
Max. load current: 150A
Max. forward voltage: 1.14V
Load current: 71A
Semiconductor structure: double series
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MDD255-20N1 MDD255-20N1 IXYS MDD255-xxN1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y1-CU
Max. off-state voltage: 2kV
Max. load current: 450A
Max. forward voltage: 1.4V
Load current: 270A
Semiconductor structure: double series
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MDD255-16N1 MDD255-16N1 IXYS MDD255-xxN1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. load current: 450A
Max. forward voltage: 1.4V
Load current: 270A
Semiconductor structure: double series
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MDD255-22N1 MDD255-22N1 IXYS MDD255-xxN1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y1-CU
Max. off-state voltage: 2.2kV
Max. load current: 450A
Max. forward voltage: 1.4V
Load current: 270A
Semiconductor structure: double series
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MDD95-14N1B IXYS MDD95-14N1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 120A; TO240AA; Ufmax: 1.13V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.13V
Load current: 120A
Semiconductor structure: double series
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MDD255-14N1 IXYS MDD255-14N1.pdf Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.8kA
Electrical mounting: screw
Mechanical mounting: screw
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MDD255-18N1 IXYS MDD255-18N1.pdf Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V
Max. forward impulse current: 9.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.08V
Load current: 270A
Semiconductor structure: double series
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MDD95-18N1B IXYS MDD95-18N1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 120A; TO240AA; Ufmax: 1.13V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 1.8kV
Max. load current: 180A
Max. forward voltage: 1.13V
Load current: 120A
Semiconductor structure: double series
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MDD95-20N1B IXYS PCN210930_TO240 screw.pdf MDD95-20N1B.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 2kV; If: 120A; TO240AA; Ufmax: 1.13V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 2kV
Max. forward voltage: 1.13V
Load current: 120A
Semiconductor structure: double series
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MDD175-28N1 MDD175-28N1 IXYS MDD175-28N1.pdf Category: Diode modules
Description: Module: diode; double series; 2.8kV; If: 240A; Y1-CU; Ufmax: 1.01V
Max. forward impulse current: 7.23kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y1-CU
Max. off-state voltage: 2.8kV
Max. forward voltage: 1.01V
Load current: 240A
Semiconductor structure: double series
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MDD44-08N1B IXYS MDD44-08N1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 800V; If: 59A; TO240AA; Ufmax: 1.26V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCC44-08io1B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 49A; TO240AA; Ufmax: 1.8V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.8V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 100/200mA
Kind of package: bulk
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MCC44-08io8B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 49A; TO240AA; Ufmax: 1.8V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.8V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 100/200mA
Kind of package: bulk
Produkt ist nicht verfügbar
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DLA100B1200LB-TUB DLA100B1200LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87FF8D2A340060C4&compId=DLA100B1200LB.pdf?ci_sign=6296754d046772e4fd96965d73e1d8054b583293 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Case: SMPD-B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
Load current: 124A
Max. forward impulse current: 0.4kA
Kind of package: tube
Electrical mounting: SMT
Type of bridge rectifier: single-phase
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IXCP10M45S IXCP10M45S IXYS IXCP10M90S.pdf Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
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MD16130S-DKM2MM IXYS media?resourcetype=datasheets&itemid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8&filename=littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 130A; package S
Max. load current: 204A
Max. forward voltage: 1.5V
Load current: 130A
Semiconductor structure: common cathode; double
Max. forward impulse current: 3.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: package S
Max. off-state voltage: 1.6kV
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LF21064NTR LF21064NTR IXYS LF21064NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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MMIX1F40N110P MMIX1F40N110P IXYS DS100431(MMIX1F40N110P).pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
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PM1206 PM1206 IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 100mA
Mounting: THT
Case: DIP6
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PM1206S PM1206S IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
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PM1205S PM1205S IXYS PM1205.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
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PM1206STR IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
Produkt ist nicht verfügbar
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IXDN609SI IXDN609SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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200+2.04 EUR
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IXDN609SIA IXDN609SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 527 Stücke:
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36+2.00 EUR
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53+1.37 EUR
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IXDN609PI IXDN609PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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30+2.46 EUR
34+2.12 EUR
50+1.46 EUR
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250+1.36 EUR
500+1.32 EUR
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IXDN609YI IXDN609YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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28+2.59 EUR
100+2.49 EUR
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VUO82-16NO7 VUO82-16NO7 IXYS VUO82-16NO7.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
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2+44.40 EUR
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VUO36-16NO8 VUO36-16NO8 IXYS pVersion=0046&contRep=ZT&docId=E29209FA28E699F19A99005056AB752F&compId=VUO36.pdf?ci_sign=792581ee186cb851d5a743fcb3669bc2c4c9bd6d Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 27A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: square
Max. forward voltage: 1.05V
Leads: connectors
Case: FO-B
Leads dimensions: 6.3x0.8mm
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50+13.46 EUR
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IXYH30N65C3 IXYH30N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8FA49F63C7820&compId=IXYH(P)30N65C3.pdf?ci_sign=b199e109e3ab7a2153ecd617407198b811892fd9 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Pulsed collector current: 118A
Collector current: 30A
Produkt ist nicht verfügbar
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IXYP30N65C3 IXYP30N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8FA49F63C7820&compId=IXYH(P)30N65C3.pdf?ci_sign=b199e109e3ab7a2153ecd617407198b811892fd9 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Pulsed collector current: 118A
Collector current: 30A
Produkt ist nicht verfügbar
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IXYH30N65C3H1 IXYH30N65C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8173C8A8ADE0C4&compId=IXY_30N65C3H1_HV.pdf?ci_sign=fe90d70eb5a4baa936f0659d92f838d1ceb9cd3a Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Pulsed collector current: 118A
Collector current: 30A
Produkt ist nicht verfügbar
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IXYT30N65C3H1HV IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8173C8A8ADE0C4&compId=IXY_30N65C3H1_HV.pdf?ci_sign=fe90d70eb5a4baa936f0659d92f838d1ceb9cd3a Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Pulsed collector current: 118A
Collector current: 30A
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LF2113BTR LF2113BTR IXYS LF2110BTR_LF2113BTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16; -2.5÷2.5A
Operating temperature: -40...125°C
Case: SO16
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Produkt ist nicht verfügbar
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DLA10IM800UC-TRL DLA10IM800UC.pdf
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 10A; DPAK; Ufmax: 1.16V; Ifsm: 120A; 75W
Mounting: SMD
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.16V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Power dissipation: 75W
Kind of package: reel; tape
Type of diode: rectifying
Case: DPAK
Produkt ist nicht verfügbar
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DCG10P1200HR DCG10P1200HR.pdf
DCG10P1200HR
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 12.5A; ISO247™; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12.5A
Semiconductor structure: double series
Case: ISO247™
Max. forward voltage: 2.2V
Max. forward impulse current: 750A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
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2+48.33 EUR
10+47.55 EUR
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MCB20P1200LB-TUB MCB20P1200LB.pdf
MCB20P1200LB-TUB
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Case: SMPD-B
Semiconductor structure: double series
Drain-source voltage: 1.2kV
Drain current: 25.5A
On-state resistance: 98mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
Gate charge: 62nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Mounting: SMD
Produkt ist nicht verfügbar
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CLA40P1200FC CLA40P1200FC.pdf
CLA40P1200FC
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 50/80mA; THT; tube; Ifsm: 555A
Case: ISOPLUS i4-pac™ x024a
Max. off-state voltage: 1.2kV
Max. load current: 63A
Load current: 40A
Semiconductor structure: double series
Gate current: 50/80mA
Max. forward impulse current: 555A
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Produkt ist nicht verfügbar
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DMA30P1200HB media?resourcetype=datasheets&itemid=9e8e9c31-8e39-46b5-8db7-7500dfb48089&filename=littelfuse-power-semiconductors-dma30p1200hb-datasheet
DMA30P1200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 370A; TO247-3
Case: TO247-3
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: double series
Max. forward impulse current: 370A
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Produkt ist nicht verfügbar
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IXDI609SIA IXDD609CI.pdf
IXDI609SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 901 Stücke:
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Anzahl Preis
24+3.00 EUR
36+2.02 EUR
50+1.46 EUR
53+1.37 EUR
300+1.33 EUR
500+1.32 EUR
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IXDI609YI IXDD609CI.pdf
IXDI609YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.82 EUR
24+3.07 EUR
25+2.90 EUR
100+2.79 EUR
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IXDI609SI IXDD609CI.pdf
IXDI609SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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IXDI609PI IXDD609CI.pdf
IXDI609PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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IXDI609SIATR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
IXDI609SIATR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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IXDI609SITR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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IXFH120N20P IXFH(K)120N20P.pdf
IXFH120N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Technology: HiPerFET™; Polar™
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.27 EUR
7+10.85 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
CLA30E1200HB CLA30E1200HB.pdf
CLA30E1200HB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 28mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 28mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.3kA
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.83 EUR
21+3.56 EUR
22+3.36 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
CPC3701CTR pVersion=0046&contRep=ZT&docId=005056AB752F1EE7919FFA760F104746&compId=CPC3701.pdf?ci_sign=3b686c50781704a72018b86754c7a8d41bba5ce4
CPC3701CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Case: SOT89
Drain-source voltage: 60V
Drain current: 0.6A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN48N60P description IXFN48N60P.pdf
IXFN48N60P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; Idm: 110A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 625W
Case: SOT227B
On-state resistance: 0.14Ω
Gate charge: 150nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Pulsed drain current: 110A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; PolarHV™
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXFQ28N60P3 IXFH(Q)28N60P3.pdf
IXFQ28N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX48N60P IXF_48N60P.pdf
IXFX48N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 48A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHV™
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
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DPG15I300PA Littelfuse-Power-Semiconductors-DPG15I300PA-Datasheet?assetguid=31AF2C96-8FF5-49B1-80B7-FE9209F6A1EA
DPG15I300PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15A; tube; Ifsm: 240A; TO220AC; 90W
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AC
Max. off-state voltage: 300V
Max. forward voltage: 1.26V
Load current: 15A
Semiconductor structure: single diode
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.22 EUR
45+1.62 EUR
47+1.53 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
DPG15I400PM Littelfuse-Power-Semiconductors-DPG15I400PM-Datasheet?assetguid=35351A1B-7A9F-4540-9789-7981B9CF6EC1
DPG15I400PM
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 190A; TO220FP-2; 35W
Reverse recovery time: 45ns
Max. forward impulse current: 190A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.39V
Load current: 15A
Semiconductor structure: single diode
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.43 EUR
67+1.07 EUR
71+1.02 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
DPG15I200PA Littelfuse-Power-Semiconductors-DPG15I200PA-Datasheet?assetguid=54180CEE-BE58-4F2E-B23D-CC4C70F44A3F
DPG15I200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 240A; TO220AC; 90W
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AC
Max. off-state voltage: 200V
Max. forward voltage: 1.26V
Load current: 15A
Semiconductor structure: single diode
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
43+1.66 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
IXTJ6N150 IXTJ6N150.pdf
IXTJ6N150
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 125W; ISO247™; 1.5us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 125W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 3.85Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1.5µs
Produkt ist nicht verfügbar
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IXXH100N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB4A5F5037D820&compId=IXXH100N60B3.pdf?ci_sign=0b1678af7c3157780613381fd45916184563f06e
IXXH100N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Pulsed collector current: 480A
Turn-on time: 92ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
Gate charge: 143nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 100A
Produkt ist nicht verfügbar
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MDD95-22N1B MDD95-22N1B-dte.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MDD95-22N1B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 120A; TO240AA; Ufmax: 1.13V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 180A
Max. forward voltage: 1.13V
Load current: 120A
Semiconductor structure: double series
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+48.33 EUR
36+47.55 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MDD255-12N1 MDD255-xxN1-DTE.pdf MDD255-xxN1-DTE.pdf
MDD255-12N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 270Ax2; Y1-CU; Ufmax: 1.4V
Max. off-state voltage: 1.2kV
Load current: 270A x2
Semiconductor structure: double series
Max. forward impulse current: 8.4kA
Case: Y1-CU
Max. forward voltage: 1.4V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+170.14 EUR
6+167.10 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MDD95-12N1B MDD95-12N1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 120A; TO240AA; Ufmax: 1.13V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 180A
Max. forward voltage: 1.13V
Load current: 120A
Semiconductor structure: double series
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.76 EUR
36+35.19 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MDD56-08N1B MDD56-08N1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 800V; If: 71A; TO240AA; Ufmax: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.14V
Load current: 71A
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MDD56-14N1B MDD56-14N1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 71A; TO240AA; Ufmax: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.14V
Load current: 71A
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MDD56-18N1B PCN210930_TO240 screw.pdf MDD56-18N1B.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 71A; TO240AA; Ufmax: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 1.8kV
Max. load current: 150A
Max. forward voltage: 1.14V
Load current: 71A
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MDD255-20N1 MDD255-xxN1-DTE.pdf
MDD255-20N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y1-CU
Max. off-state voltage: 2kV
Max. load current: 450A
Max. forward voltage: 1.4V
Load current: 270A
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MDD255-16N1 MDD255-xxN1-DTE.pdf
MDD255-16N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. load current: 450A
Max. forward voltage: 1.4V
Load current: 270A
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MDD255-22N1 MDD255-xxN1-DTE.pdf
MDD255-22N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y1-CU
Max. off-state voltage: 2.2kV
Max. load current: 450A
Max. forward voltage: 1.4V
Load current: 270A
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MDD95-14N1B MDD95-14N1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 120A; TO240AA; Ufmax: 1.13V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.13V
Load current: 120A
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MDD255-14N1 MDD255-14N1.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.8kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD255-18N1 MDD255-18N1.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V
Max. forward impulse current: 9.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.08V
Load current: 270A
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MDD95-18N1B MDD95-18N1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 120A; TO240AA; Ufmax: 1.13V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 1.8kV
Max. load current: 180A
Max. forward voltage: 1.13V
Load current: 120A
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MDD95-20N1B PCN210930_TO240 screw.pdf MDD95-20N1B.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 120A; TO240AA; Ufmax: 1.13V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 2kV
Max. forward voltage: 1.13V
Load current: 120A
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MDD175-28N1 MDD175-28N1.pdf
MDD175-28N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.8kV; If: 240A; Y1-CU; Ufmax: 1.01V
Max. forward impulse current: 7.23kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y1-CU
Max. off-state voltage: 2.8kV
Max. forward voltage: 1.01V
Load current: 240A
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MDD44-08N1B MDD44-08N1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 800V; If: 59A; TO240AA; Ufmax: 1.26V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCC44-08io1B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 49A; TO240AA; Ufmax: 1.8V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.8V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 100/200mA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC44-08io8B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 49A; TO240AA; Ufmax: 1.8V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.8V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 100/200mA
Kind of package: bulk
Produkt ist nicht verfügbar
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DLA100B1200LB-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87FF8D2A340060C4&compId=DLA100B1200LB.pdf?ci_sign=6296754d046772e4fd96965d73e1d8054b583293
DLA100B1200LB-TUB
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Case: SMPD-B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
Load current: 124A
Max. forward impulse current: 0.4kA
Kind of package: tube
Electrical mounting: SMT
Type of bridge rectifier: single-phase
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.36 EUR
20+21.06 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXCP10M45S IXCP10M90S.pdf
IXCP10M45S
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
Produkt ist nicht verfügbar
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MD16130S-DKM2MM media?resourcetype=datasheets&itemid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8&filename=littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 130A; package S
Max. load current: 204A
Max. forward voltage: 1.5V
Load current: 130A
Semiconductor structure: common cathode; double
Max. forward impulse current: 3.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: package S
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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LF21064NTR LF21064NTR.pdf
LF21064NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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MMIX1F40N110P DS100431(MMIX1F40N110P).pdf
MMIX1F40N110P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+65.82 EUR
20+64.81 EUR
Mindestbestellmenge: 2
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PM1206 PM1206.pdf
PM1206
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 100mA
Mounting: THT
Case: DIP6
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.08 EUR
13+5.51 EUR
Mindestbestellmenge: 6
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PM1206S PM1206.pdf
PM1206S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
Produkt ist nicht verfügbar
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PM1205S PM1205.pdf
PM1205S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
Produkt ist nicht verfügbar
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PM1206STR PM1206.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
Produkt ist nicht verfügbar
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IXDN609SI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDN609SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 1601 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.59 EUR
32+2.25 EUR
34+2.12 EUR
200+2.04 EUR
Mindestbestellmenge: 16
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IXDN609SIA pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDN609SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 527 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.63 EUR
36+2.00 EUR
50+1.46 EUR
53+1.37 EUR
200+1.32 EUR
Mindestbestellmenge: 20
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IXDN609PI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDN609PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 819 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.46 EUR
34+2.12 EUR
50+1.46 EUR
53+1.37 EUR
250+1.36 EUR
500+1.32 EUR
Mindestbestellmenge: 30
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IXDN609YI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDN609YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 814 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.69 EUR
27+2.73 EUR
28+2.59 EUR
100+2.49 EUR
Mindestbestellmenge: 20
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VUO82-16NO7 VUO82-16NO7.pdf
VUO82-16NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+44.40 EUR
Mindestbestellmenge: 2
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VUO36-16NO8 pVersion=0046&contRep=ZT&docId=E29209FA28E699F19A99005056AB752F&compId=VUO36.pdf?ci_sign=792581ee186cb851d5a743fcb3669bc2c4c9bd6d
VUO36-16NO8
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 27A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: square
Max. forward voltage: 1.05V
Leads: connectors
Case: FO-B
Leads dimensions: 6.3x0.8mm
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.36 EUR
5+14.53 EUR
6+13.73 EUR
50+13.46 EUR
100+13.20 EUR
Mindestbestellmenge: 4
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IXYH30N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8FA49F63C7820&compId=IXYH(P)30N65C3.pdf?ci_sign=b199e109e3ab7a2153ecd617407198b811892fd9
IXYH30N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Pulsed collector current: 118A
Collector current: 30A
Produkt ist nicht verfügbar
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IXYP30N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8FA49F63C7820&compId=IXYH(P)30N65C3.pdf?ci_sign=b199e109e3ab7a2153ecd617407198b811892fd9
IXYP30N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Pulsed collector current: 118A
Collector current: 30A
Produkt ist nicht verfügbar
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IXYH30N65C3H1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8173C8A8ADE0C4&compId=IXY_30N65C3H1_HV.pdf?ci_sign=fe90d70eb5a4baa936f0659d92f838d1ceb9cd3a
IXYH30N65C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Pulsed collector current: 118A
Collector current: 30A
Produkt ist nicht verfügbar
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IXYT30N65C3H1HV pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8173C8A8ADE0C4&compId=IXY_30N65C3H1_HV.pdf?ci_sign=fe90d70eb5a4baa936f0659d92f838d1ceb9cd3a
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Pulsed collector current: 118A
Collector current: 30A
Produkt ist nicht verfügbar
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LF2113BTR LF2110BTR_LF2113BTR.pdf
LF2113BTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16; -2.5÷2.5A
Operating temperature: -40...125°C
Case: SO16
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Produkt ist nicht verfügbar
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