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IXGH2N250 IXGH2N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFE9F6304CF820&compId=IXGH2N250.pdf?ci_sign=139bab15db439c626267cbd44ebcd44f0138782d Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 2A
Pulsed collector current: 13.5A
Turn-on time: 115ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 32W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 10.5nC
Technology: NPT
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IXGH25N250 IXGH25N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB00DD7512F1820&compId=IXGH25N250.pdf?ci_sign=37672af961a987aa06f6a3c92f025fec780b03e0 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 200A
Turn-on time: 301ns
Turn-off time: 409ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 75nC
Technology: NPT
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IXGK75N250 IXGK75N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB03F9BBFA01820&compId=IXGK75N250.pdf?ci_sign=be8461cff61548ebe11396ab45f12949d639eeef Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Mounting: THT
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 530A
Turn-on time: 280ns
Turn-off time: 725ns
Type of transistor: IGBT
Power dissipation: 780W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 410nC
Technology: NPT
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MWI75-06A7T IXYS Category: IGBT modules
Description: Transistor/transistor; IGBT three-phase bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT
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DPG20C400PB DPG20C400PB IXYS media?resourcetype=datasheets&itemid=D7658169-4094-4E23-BDBE-9048A8ED197E&filename=Littelfuse-Power-Semiconductors-DPG20C400PB-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220AB; 65W
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A x2
Semiconductor structure: common cathode; double
auf Bestellung 182 Stücke:
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21+3.56 EUR
29+2.49 EUR
31+2.36 EUR
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DPG20C300PN DPG20C300PN IXYS Littelfuse-Power-Semiconductors-DPG20C300PN-Datasheet?assetguid=81A91808-9E32-4874-B0CD-3B7F01F1EA7E Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP
auf Bestellung 557 Stücke:
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33+2.23 EUR
36+2.02 EUR
41+1.77 EUR
45+1.6 EUR
48+1.52 EUR
250+1.49 EUR
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DPG20C200PN DPG20C200PN IXYS media?resourcetype=datasheets&itemid=DEA3C694-23C5-493C-A991-2548CAD0213C&filename=Littelfuse-Power-Semiconductors-DPG20C200PN-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Case: TO220FP
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 46 Stücke:
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20+3.66 EUR
36+2 EUR
38+1.89 EUR
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DPG20C400PN DPG20C400PN IXYS media?resourcetype=datasheets&itemid=E87CB565-0DFF-4A58-A4AE-7E164796DE68&filename=Littelfuse-Power-Semiconductors-DPG20C400PN-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220FP; 35W
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A x2
Semiconductor structure: common cathode; double
auf Bestellung 153 Stücke:
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22+3.35 EUR
24+3.07 EUR
30+2.43 EUR
32+2.3 EUR
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DPG20C200PB DPG20C200PB IXYS media?resourcetype=datasheets&itemid=F8BB398C-2D66-4BCB-B5A5-53172AE4D823&filename=Littelfuse-Power-Semiconductors-DPG20C200PB-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Case: TO220AB
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
auf Bestellung 112 Stücke:
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23+3.2 EUR
53+1.36 EUR
56+1.29 EUR
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DPG20C300PB DPG20C300PB IXYS DPG20C300PB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
auf Bestellung 137 Stücke:
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26+2.76 EUR
29+2.53 EUR
36+2 EUR
38+1.9 EUR
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DPG20C400PC-TRL IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC3F8C2994420C4&compId=DPG20C400PC.pdf?ci_sign=ae12975f35f22d2ea8356a4e6286bba1a04794bc Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: SMD
Case: TO263AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.51V
Load current: 10A x2
Semiconductor structure: common cathode; double
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DPG10I200PA DPG10I200PA IXYS media?resourcetype=datasheets&itemid=EC448438-07B9-4C8C-BA5D-4A6822B3E045&filename=Littelfuse-Power-Semiconductors-DPG10I200PA-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Case: TO220AC
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
auf Bestellung 190 Stücke:
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34+2.13 EUR
40+1.82 EUR
54+1.34 EUR
57+1.27 EUR
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DPG10I300PA DPG10I300PA IXYS DPG10I300PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220AC
Max. forward voltage: 1.27V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
Power dissipation: 65W
auf Bestellung 28 Stücke:
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28+2.56 EUR
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DPG10I400PM DPG10I400PM IXYS DPG10I400PM.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
auf Bestellung 43 Stücke:
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20+3.69 EUR
43+1.66 EUR
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DPG10I200PM DPG10I200PM IXYS DPG10I200PM.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Case: TO220FP-2
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 56 Stücke:
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35+2.07 EUR
56+1.27 EUR
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DPG10I400PA DPG10I400PA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD4F952FFE2B8BF&compId=DPG10I400PA.pdf?ci_sign=a1fffe2dd22dde2d2743b8bda8be89ffa1ad3840 Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.33 EUR
36+2.02 EUR
42+1.73 EUR
45+1.6 EUR
48+1.52 EUR
Mindestbestellmenge: 31
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DPG10P400PJ DPG10P400PJ IXYS DPG10P400PJ.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.28V
Load current: 10A
Semiconductor structure: double series
Reverse recovery time: 45ns
Max. forward impulse current: 130A
Power dissipation: 60W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS220™
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.42 EUR
11+6.66 EUR
14+5.32 EUR
15+5.02 EUR
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IXFR200N10P IXFR200N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B1F820&compId=IXFR200N10P.pdf?ci_sign=3c1c3fb8dc67ddc7f0c6584000497132bd7f705c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Kind of package: tube
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 235nC
Kind of channel: enhancement
Mounting: THT
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IXDN602PI IXDN602PI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
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IXDN602SIA IXDN602SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 649 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.62 EUR
65+1.12 EUR
70+1.03 EUR
74+0.97 EUR
100+0.96 EUR
300+0.94 EUR
Mindestbestellmenge: 45
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DSA1-16D DSA1-16D IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82836F916CE143&compId=DSA1-18D.pdf?ci_sign=452a5902ddb9885d20bbcd189749dd424e83331a Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
auf Bestellung 324 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.91 EUR
17+4.33 EUR
18+4.09 EUR
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MCC26-12io1B MCC26-12io1B IXYS pVersion=0046&contRep=ZT&docId=E29206B5694F53F19A99005056AB752F&compId=L073.pdf?ci_sign=00049e309488e06fa0b04fd0c328b67947769dea pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V; Ifsm: 560A; screw
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 560A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.64V
Type of semiconductor module: thyristor
auf Bestellung 52 Stücke:
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3+27.07 EUR
36+26.91 EUR
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MCC26-12io8B MCC26-12io8B IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BD95514C92E50143&compId=MCC26-12io8B.pdf?ci_sign=035343a5848330b6e8f059b4ca7ab93c4c826646 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; Ifsm: 440A; screw
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.27V
Type of semiconductor module: thyristor
auf Bestellung 18 Stücke:
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3+25.71 EUR
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MCC26-14io1B
+1
MCC26-14io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
auf Bestellung 34 Stücke:
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3+29 EUR
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MCC26-16io8B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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MCC26-08io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Double series; 800V; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 0.8kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
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MCC26-08io8B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Double series; 800V; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 0.8kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
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MCC26-14io8B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
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DSSK48-003BS DSSK48-003BS IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB9B9FB2F898BF&compId=DSSK48-003BS.pdf?ci_sign=39cde3eceec47b3ed55488881079c2561cf5f1e3 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 30V; 25Ax2; reel,tape; 105W
Max. off-state voltage: 30V
Max. forward voltage: 0.35V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.3kA
Power dissipation: 105W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: D2PAK
auf Bestellung 560 Stücke:
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64+1.13 EUR
250+1.1 EUR
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IX9907N IX9907N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E7AAE9A4C80C4&compId=IX9907.pdf?ci_sign=1c528a18bc3dd6c5a1da43fa7fa252678bebf06f Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
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IX9908N IX9908N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E77F90511C0C4&compId=IX9908.pdf?ci_sign=7d97fd2db8aecb60afa1d2239646bb1a84c4bffd Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
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IXGH32N170A IXGH32N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF6B9E68B0F820&compId=IXGH(t)32N170a.pdf?ci_sign=20f3ac78b03e514554c84896e87e65060d55b472 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
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IXFH54N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh54n65x3-datasheet?assetguid=72e478f6-5b56-48fd-b5ac-2dc7d5bb4639 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 140ns
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CPC1965Y CPC1965Y IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A44BA23226F8BF&compId=CPC1965G.pdf?ci_sign=3a2396cdfa67a4109f17be1dd9e9ffa31f3979f0 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
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CPC1965G CPC1965G IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A44BA23226F8BF&compId=CPC1965G.pdf?ci_sign=3a2396cdfa67a4109f17be1dd9e9ffa31f3979f0 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Max. operating current: 1A
Operating temperature: -40...85°C
Body dimensions: 19.2x7.62x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 260V AC
Control current max.: 100mA
Mounting: THT
Case: DIP4
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FMM75-01F FMM75-01F IXYS FMM75-01F.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 75A; double series; 300ns
Type of transistor: N-MOSFET x2
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
Reverse recovery time: 300ns
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MDNA660U2200PTEH IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBDA13A53CBB8A0C7&compId=MDNA660U2200PTEH.pdf?ci_sign=c7490321ee76c4d350619996c90c0e64c2284ada Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 2.2kV
Load current: 660A
Max. forward impulse current: 5kA
Electrical mounting: Press-Fit
Version: module
Max. forward voltage: 1.28V
Case: E3-Pack
Mechanical mounting: screw
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VGB0124AY7A VGB0124AY7A IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA996B22C9C8960C7&compId=VGB%2C%20F.pdf?ci_sign=950fe8d4ce9285f8e3019d516bbc23c267185ed8 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: braking rectifier assemblies; Urmax: 1.4kV
Type of bridge rectifier: braking rectifier assemblies
Max. off-state voltage: 1.4kV
Load current: 1A
Max. forward impulse current: 60A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Case: VG-A
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IXFA26N50P3 IXFA26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Drain-source voltage: 500V
Drain current: 26A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Gate charge: 42nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
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IXFA26N30X3 IXFA26N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBAA25B128D8BF&compId=IXF_26N30X3.pdf?ci_sign=7542ebe8db09680e18acec1f007a854c704096f0 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Reverse recovery time: 105ns
Drain-source voltage: 300V
Drain current: 26A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
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MEK300-06DA MEK300-06DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: common cathode
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: Y4-M6
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MCB40P1200LB-TRR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492E173084520D6&compId=MCB40P1200LB.pdf?ci_sign=d1b644c5158fdbba254d94bc9d04330c91b74571 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: double series
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MCB40P1200LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492E173084520D6&compId=MCB40P1200LB.pdf?ci_sign=d1b644c5158fdbba254d94bc9d04330c91b74571 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
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MKE38P600LB IXYS SMPD%20MOSFET%20and%20IGBTs_Product%20Brief_01.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 600V; 50A; SMPD; double series
Semiconductor structure: double series
Reverse recovery time: 660ns
Drain-source voltage: 600V
Drain current: 50A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 0.19µC
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SMPD
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DMA40U1800GU DMA40U1800GU IXYS media?resourcetype=datasheets&itemid=f71e2749-7cb7-4a6d-a573-5ff9e7c0a117&filename=littelfuse%2520power%2520semiconductors%2520dma40u1800gu%2520datasheet.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.8kV
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
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CPC2330N CPC2330N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891AC0C7&compId=CPC2330N.pdf?ci_sign=029ea682cdcd4f7973c59961ae0fa6d8e53884ee Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Operating temperature: -40...85°C
Case: SO8
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
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CPC2330NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891AC0C7&compId=CPC2330N.pdf?ci_sign=029ea682cdcd4f7973c59961ae0fa6d8e53884ee Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
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IXTP450P2 IXTP450P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55001B8D0D820&compId=IXTH(P%2CQ)450P2.pdf?ci_sign=bd2a070be623e6483ee1ebfc57c7e655c7dd0ea6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 300W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
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IXTA3N100D2 IXTA3N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBD9B42C73B820&compId=IXTA(P)3N100D2.pdf?ci_sign=c245ce0cffe79380fadde6d25a375768a49f0754 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance:
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
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IXTA3N100D2HV IXTA3N100D2HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC857820&compId=IXTA3N100D2HV.pdf?ci_sign=f5984504d3ae9f0565200babfc9d597aed5ffc16 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance:
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
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CPC3909CTR CPC3909CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE791A0140A2F8D4746&compId=CPC3909.pdf?ci_sign=86033a3d9d3a272cbc592fdba02ef09d31cbffe8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89
Mounting: SMD
Drain-source voltage: 400V
Drain current: 0.3A
On-state resistance:
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Case: SOT89
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VBO130-16NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FD5CE1FCECA0C4&compId=VBO130-16NO7.pdf?ci_sign=cdd6350d06bf034525ea3500b4608a7fe5944bba Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
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VBO130-08NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FD5614105840C4&compId=VBO130-08NO7.pdf?ci_sign=5eb6ffa3965786017a62ee02e43ef71a157e8e67 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
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VBO130-12NO7 VBO130-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FD515B60BDA0C4&compId=VBO130-12NO7.pdf?ci_sign=22fff7baeda63192d4b71b3dd167d856c31e71c5 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
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VBO130-18NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FD5FB3FE20A0C4&compId=VBO130-18NO7.pdf?ci_sign=a0c591ca8bdd37dbe3cefb717bfa7047ef483326 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.8kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
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MCC44-16io1B IXYS Littelfuse-Power-Semiconductors-MCC44-16io1B-Datasheet?assetguid=229b9887-d9f3-42c3-a6e0-14d1778fab40 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Electrical mounting: screw
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.34V
Load current: 49A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Mechanical mounting: screw
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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MCD162-18io1 MCD162-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01F68DDF93E27&compId=MCD162-18IO1-DTE.pdf?ci_sign=455e3bcba99267b8d353287e50d54a847388ebe6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. load current: 300A
Max. forward voltage: 1.03V
Load current: 181A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Type of semiconductor module: diode-thyristor
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
1+79.09 EUR
6+76.71 EUR
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IXFP30N25X3M IXFP30N25X3M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A17820&compId=IXFP30N25X3M.pdf?ci_sign=c43fccb4881a3c2a85a82e3454dc2bf93fc5afd8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
Produkt ist nicht verfügbar
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LBA710S LBA710S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE320E0C7&compId=LBA710.pdf?ci_sign=b2bcf3bea0ade2d924338f229a01b2c3b3a17049 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
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LBA710STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE320E0C7&compId=LBA710.pdf?ci_sign=b2bcf3bea0ade2d924338f229a01b2c3b3a17049 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
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IXGH2N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFE9F6304CF820&compId=IXGH2N250.pdf?ci_sign=139bab15db439c626267cbd44ebcd44f0138782d
IXGH2N250
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 2A
Pulsed collector current: 13.5A
Turn-on time: 115ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 32W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 10.5nC
Technology: NPT
Produkt ist nicht verfügbar
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IXGH25N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB00DD7512F1820&compId=IXGH25N250.pdf?ci_sign=37672af961a987aa06f6a3c92f025fec780b03e0
IXGH25N250
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 200A
Turn-on time: 301ns
Turn-off time: 409ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 75nC
Technology: NPT
Produkt ist nicht verfügbar
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IXGK75N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB03F9BBFA01820&compId=IXGK75N250.pdf?ci_sign=be8461cff61548ebe11396ab45f12949d639eeef
IXGK75N250
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Mounting: THT
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 530A
Turn-on time: 280ns
Turn-off time: 725ns
Type of transistor: IGBT
Power dissipation: 780W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 410nC
Technology: NPT
Produkt ist nicht verfügbar
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MWI75-06A7T
Hersteller: IXYS
Category: IGBT modules
Description: Transistor/transistor; IGBT three-phase bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
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DPG20C400PB media?resourcetype=datasheets&itemid=D7658169-4094-4E23-BDBE-9048A8ED197E&filename=Littelfuse-Power-Semiconductors-DPG20C400PB-Datasheet
DPG20C400PB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220AB; 65W
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A x2
Semiconductor structure: common cathode; double
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.56 EUR
29+2.49 EUR
31+2.36 EUR
Mindestbestellmenge: 21
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DPG20C300PN Littelfuse-Power-Semiconductors-DPG20C300PN-Datasheet?assetguid=81A91808-9E32-4874-B0CD-3B7F01F1EA7E
DPG20C300PN
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP
auf Bestellung 557 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.23 EUR
36+2.02 EUR
41+1.77 EUR
45+1.6 EUR
48+1.52 EUR
250+1.49 EUR
Mindestbestellmenge: 33
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DPG20C200PN media?resourcetype=datasheets&itemid=DEA3C694-23C5-493C-A991-2548CAD0213C&filename=Littelfuse-Power-Semiconductors-DPG20C200PN-Datasheet
DPG20C200PN
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Case: TO220FP
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.66 EUR
36+2 EUR
38+1.89 EUR
Mindestbestellmenge: 20
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DPG20C400PN media?resourcetype=datasheets&itemid=E87CB565-0DFF-4A58-A4AE-7E164796DE68&filename=Littelfuse-Power-Semiconductors-DPG20C400PN-Datasheet
DPG20C400PN
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220FP; 35W
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A x2
Semiconductor structure: common cathode; double
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.35 EUR
24+3.07 EUR
30+2.43 EUR
32+2.3 EUR
Mindestbestellmenge: 22
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DPG20C200PB media?resourcetype=datasheets&itemid=F8BB398C-2D66-4BCB-B5A5-53172AE4D823&filename=Littelfuse-Power-Semiconductors-DPG20C200PB-Datasheet
DPG20C200PB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Case: TO220AB
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.2 EUR
53+1.36 EUR
56+1.29 EUR
Mindestbestellmenge: 23
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DPG20C300PB DPG20C300PB.pdf
DPG20C300PB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.76 EUR
29+2.53 EUR
36+2 EUR
38+1.9 EUR
Mindestbestellmenge: 26
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DPG20C400PC-TRL pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC3F8C2994420C4&compId=DPG20C400PC.pdf?ci_sign=ae12975f35f22d2ea8356a4e6286bba1a04794bc
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: SMD
Case: TO263AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.51V
Load current: 10A x2
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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DPG10I200PA media?resourcetype=datasheets&itemid=EC448438-07B9-4C8C-BA5D-4A6822B3E045&filename=Littelfuse-Power-Semiconductors-DPG10I200PA-Datasheet
DPG10I200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Case: TO220AC
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.13 EUR
40+1.82 EUR
54+1.34 EUR
57+1.27 EUR
Mindestbestellmenge: 34
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DPG10I300PA DPG10I300PA.pdf
DPG10I300PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220AC
Max. forward voltage: 1.27V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
Power dissipation: 65W
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
Mindestbestellmenge: 28
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DPG10I400PM DPG10I400PM.pdf
DPG10I400PM
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.69 EUR
43+1.66 EUR
Mindestbestellmenge: 20
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DPG10I200PM DPG10I200PM.pdf
DPG10I200PM
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Case: TO220FP-2
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
56+1.27 EUR
Mindestbestellmenge: 35
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DPG10I400PA pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD4F952FFE2B8BF&compId=DPG10I400PA.pdf?ci_sign=a1fffe2dd22dde2d2743b8bda8be89ffa1ad3840
DPG10I400PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
36+2.02 EUR
42+1.73 EUR
45+1.6 EUR
48+1.52 EUR
Mindestbestellmenge: 31
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DPG10P400PJ DPG10P400PJ.pdf
DPG10P400PJ
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.28V
Load current: 10A
Semiconductor structure: double series
Reverse recovery time: 45ns
Max. forward impulse current: 130A
Power dissipation: 60W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS220™
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.42 EUR
11+6.66 EUR
14+5.32 EUR
15+5.02 EUR
Mindestbestellmenge: 10
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IXFR200N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B1F820&compId=IXFR200N10P.pdf?ci_sign=3c1c3fb8dc67ddc7f0c6584000497132bd7f705c
IXFR200N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Kind of package: tube
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 235nC
Kind of channel: enhancement
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDN602PI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDN602PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
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IXDN602SIA pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDN602SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 649 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
65+1.12 EUR
70+1.03 EUR
74+0.97 EUR
100+0.96 EUR
300+0.94 EUR
Mindestbestellmenge: 45
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DSA1-16D pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82836F916CE143&compId=DSA1-18D.pdf?ci_sign=452a5902ddb9885d20bbcd189749dd424e83331a
DSA1-16D
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
auf Bestellung 324 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.91 EUR
17+4.33 EUR
18+4.09 EUR
Mindestbestellmenge: 11
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MCC26-12io1B pVersion=0046&contRep=ZT&docId=E29206B5694F53F19A99005056AB752F&compId=L073.pdf?ci_sign=00049e309488e06fa0b04fd0c328b67947769dea pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCC26-12io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V; Ifsm: 560A; screw
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 560A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.64V
Type of semiconductor module: thyristor
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+27.07 EUR
36+26.91 EUR
Mindestbestellmenge: 3
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MCC26-12io8B pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BD95514C92E50143&compId=MCC26-12io8B.pdf?ci_sign=035343a5848330b6e8f059b4ca7ab93c4c826646 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCC26-12io8B
Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; Ifsm: 440A; screw
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.27V
Type of semiconductor module: thyristor
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+25.71 EUR
Mindestbestellmenge: 3
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MCC26-14io1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29 EUR
Mindestbestellmenge: 3
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MCC26-16io8B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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MCC26-08io1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 800V; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 0.8kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC26-08io8B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 800V; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 0.8kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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MCC26-14io8B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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DSSK48-003BS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB9B9FB2F898BF&compId=DSSK48-003BS.pdf?ci_sign=39cde3eceec47b3ed55488881079c2561cf5f1e3
DSSK48-003BS
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 30V; 25Ax2; reel,tape; 105W
Max. off-state voltage: 30V
Max. forward voltage: 0.35V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.3kA
Power dissipation: 105W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: D2PAK
auf Bestellung 560 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
57+1.26 EUR
61+1.19 EUR
64+1.13 EUR
250+1.1 EUR
500+1.07 EUR
Mindestbestellmenge: 55
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IX9907N pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E7AAE9A4C80C4&compId=IX9907.pdf?ci_sign=1c528a18bc3dd6c5a1da43fa7fa252678bebf06f
IX9907N
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
Mindestbestellmenge: 129
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IX9908N pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E77F90511C0C4&compId=IX9908.pdf?ci_sign=7d97fd2db8aecb60afa1d2239646bb1a84c4bffd
IX9908N
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
87+0.83 EUR
97+0.74 EUR
109+0.66 EUR
125+0.57 EUR
132+0.54 EUR
Mindestbestellmenge: 87
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IXGH32N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF6B9E68B0F820&compId=IXGH(t)32N170a.pdf?ci_sign=20f3ac78b03e514554c84896e87e65060d55b472
IXGH32N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXFH54N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh54n65x3-datasheet?assetguid=72e478f6-5b56-48fd-b5ac-2dc7d5bb4639
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 140ns
Produkt ist nicht verfügbar
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CPC1965Y pVersion=0046&contRep=ZT&docId=005056AB82531EE995A44BA23226F8BF&compId=CPC1965G.pdf?ci_sign=3a2396cdfa67a4109f17be1dd9e9ffa31f3979f0
CPC1965Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.05 EUR
18+4.19 EUR
19+3.96 EUR
Mindestbestellmenge: 8
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CPC1965G pVersion=0046&contRep=ZT&docId=005056AB82531EE995A44BA23226F8BF&compId=CPC1965G.pdf?ci_sign=3a2396cdfa67a4109f17be1dd9e9ffa31f3979f0
CPC1965G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Max. operating current: 1A
Operating temperature: -40...85°C
Body dimensions: 19.2x7.62x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 260V AC
Control current max.: 100mA
Mounting: THT
Case: DIP4
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.39 EUR
18+4.05 EUR
19+3.82 EUR
Mindestbestellmenge: 12
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FMM75-01F FMM75-01F.pdf
FMM75-01F
Hersteller: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 75A; double series; 300ns
Type of transistor: N-MOSFET x2
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
Reverse recovery time: 300ns
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.72 EUR
Mindestbestellmenge: 4
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MDNA660U2200PTEH pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBDA13A53CBB8A0C7&compId=MDNA660U2200PTEH.pdf?ci_sign=c7490321ee76c4d350619996c90c0e64c2284ada
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 2.2kV
Load current: 660A
Max. forward impulse current: 5kA
Electrical mounting: Press-Fit
Version: module
Max. forward voltage: 1.28V
Case: E3-Pack
Mechanical mounting: screw
Produkt ist nicht verfügbar
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VGB0124AY7A pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA996B22C9C8960C7&compId=VGB%2C%20F.pdf?ci_sign=950fe8d4ce9285f8e3019d516bbc23c267185ed8
VGB0124AY7A
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: braking rectifier assemblies; Urmax: 1.4kV
Type of bridge rectifier: braking rectifier assemblies
Max. off-state voltage: 1.4kV
Load current: 1A
Max. forward impulse current: 60A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Case: VG-A
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+123.04 EUR
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IXFA26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFA26N50P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Drain-source voltage: 500V
Drain current: 26A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Gate charge: 42nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.55 EUR
30+2.43 EUR
31+2.33 EUR
50+2.26 EUR
Mindestbestellmenge: 29
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IXFA26N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBAA25B128D8BF&compId=IXF_26N30X3.pdf?ci_sign=7542ebe8db09680e18acec1f007a854c704096f0 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFA26N30X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Reverse recovery time: 105ns
Drain-source voltage: 300V
Drain current: 26A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Produkt ist nicht verfügbar
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MEK300-06DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MEK300-06DA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: common cathode
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: Y4-M6
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+87 EUR
6+86.41 EUR
12+83.9 EUR
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MCB40P1200LB-TRR pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492E173084520D6&compId=MCB40P1200LB.pdf?ci_sign=d1b644c5158fdbba254d94bc9d04330c91b74571
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCB40P1200LB-TUB pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492E173084520D6&compId=MCB40P1200LB.pdf?ci_sign=d1b644c5158fdbba254d94bc9d04330c91b74571
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MKE38P600LB SMPD%20MOSFET%20and%20IGBTs_Product%20Brief_01.pdf
Hersteller: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 600V; 50A; SMPD; double series
Semiconductor structure: double series
Reverse recovery time: 660ns
Drain-source voltage: 600V
Drain current: 50A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 0.19µC
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SMPD
Produkt ist nicht verfügbar
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DMA40U1800GU media?resourcetype=datasheets&itemid=f71e2749-7cb7-4a6d-a573-5ff9e7c0a117&filename=littelfuse%2520power%2520semiconductors%2520dma40u1800gu%2520datasheet.pdf
DMA40U1800GU
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.8kV
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.37 EUR
7+10.61 EUR
8+10.04 EUR
Mindestbestellmenge: 5
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CPC2330N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891AC0C7&compId=CPC2330N.pdf?ci_sign=029ea682cdcd4f7973c59961ae0fa6d8e53884ee
CPC2330N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Operating temperature: -40...85°C
Case: SO8
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
auf Bestellung 484 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.59 EUR
32+2.25 EUR
34+2.13 EUR
Mindestbestellmenge: 20
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CPC2330NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891AC0C7&compId=CPC2330N.pdf?ci_sign=029ea682cdcd4f7973c59961ae0fa6d8e53884ee
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
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IXTP450P2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55001B8D0D820&compId=IXTH(P%2CQ)450P2.pdf?ci_sign=bd2a070be623e6483ee1ebfc57c7e655c7dd0ea6
IXTP450P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 300W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.86 EUR
23+3.2 EUR
24+3.03 EUR
100+2.92 EUR
Mindestbestellmenge: 13
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IXTA3N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBD9B42C73B820&compId=IXTA(P)3N100D2.pdf?ci_sign=c245ce0cffe79380fadde6d25a375768a49f0754
IXTA3N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance:
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Produkt ist nicht verfügbar
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IXTA3N100D2HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC857820&compId=IXTA3N100D2HV.pdf?ci_sign=f5984504d3ae9f0565200babfc9d597aed5ffc16
IXTA3N100D2HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance:
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Produkt ist nicht verfügbar
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CPC3909CTR pVersion=0046&contRep=ZT&docId=005056AB752F1EE791A0140A2F8D4746&compId=CPC3909.pdf?ci_sign=86033a3d9d3a272cbc592fdba02ef09d31cbffe8
CPC3909CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89
Mounting: SMD
Drain-source voltage: 400V
Drain current: 0.3A
On-state resistance:
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Case: SOT89
Produkt ist nicht verfügbar
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VBO130-16NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FD5CE1FCECA0C4&compId=VBO130-16NO7.pdf?ci_sign=cdd6350d06bf034525ea3500b4608a7fe5944bba
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
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VBO130-08NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FD5614105840C4&compId=VBO130-08NO7.pdf?ci_sign=5eb6ffa3965786017a62ee02e43ef71a157e8e67
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
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VBO130-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FD515B60BDA0C4&compId=VBO130-12NO7.pdf?ci_sign=22fff7baeda63192d4b71b3dd167d856c31e71c5
VBO130-12NO7
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
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VBO130-18NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FD5FB3FE20A0C4&compId=VBO130-18NO7.pdf?ci_sign=a0c591ca8bdd37dbe3cefb717bfa7047ef483326
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.8kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
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MCC44-16io1B Littelfuse-Power-Semiconductors-MCC44-16io1B-Datasheet?assetguid=229b9887-d9f3-42c3-a6e0-14d1778fab40
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Electrical mounting: screw
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.34V
Load current: 49A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Mechanical mounting: screw
Type of semiconductor module: thyristor
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MCD162-18io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01F68DDF93E27&compId=MCD162-18IO1-DTE.pdf?ci_sign=455e3bcba99267b8d353287e50d54a847388ebe6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCD162-18io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. load current: 300A
Max. forward voltage: 1.03V
Load current: 181A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Type of semiconductor module: diode-thyristor
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+79.09 EUR
6+76.71 EUR
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IXFP30N25X3M pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A17820&compId=IXFP30N25X3M.pdf?ci_sign=c43fccb4881a3c2a85a82e3454dc2bf93fc5afd8
IXFP30N25X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
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LBA710S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE320E0C7&compId=LBA710.pdf?ci_sign=b2bcf3bea0ade2d924338f229a01b2c3b3a17049
LBA710S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
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LBA710STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE320E0C7&compId=LBA710.pdf?ci_sign=b2bcf3bea0ade2d924338f229a01b2c3b3a17049
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
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