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IXTQ22N50P IXTQ22N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDA40D50235820&compId=IXTH(Q%2CV)22N50P_S.pdf?ci_sign=ce2412085be3e0bce70371fe953f27e347b1e073 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
auf Bestellung 85 Stücke:
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10+7.15 EUR
16+4.52 EUR
17+4.28 EUR
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IXFH22N50P IXFH22N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC111820&compId=IXFH22N50P.pdf?ci_sign=8586e5293aa35f9bb95f912636881d81bf896a89 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 226 Stücke:
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10+7.42 EUR
13+5.52 EUR
14+5.22 EUR
120+5.02 EUR
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IXFH52N50P2 IXFH52N50P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4B656662E1820&compId=IXFH(T)52N50P2.pdf?ci_sign=7c44fe5509f3cb92524e6dfee4e7d8922d30699d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 113nC
On-state resistance: 0.12Ω
Drain current: 52A
Drain-source voltage: 500V
Power dissipation: 960W
auf Bestellung 232 Stücke:
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6+14.04 EUR
7+10.57 EUR
8+10 EUR
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MMIX1F132N50P3
+1
 		MMIX1F132N50P3 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f132n50p3_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Pulsed drain current: 330A
Power dissipation: 520W
Technology: HiPerFET™; Polar3™
auf Bestellung 20 Stücke:
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10+46.33 EUR
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IXTH22N50P IXTH22N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDA40D50235820&compId=IXTH(Q%2CV)22N50P_S.pdf?ci_sign=ce2412085be3e0bce70371fe953f27e347b1e073 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
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LCA110 LCA110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF03E0C7&compId=LCA110.pdf?ci_sign=c8142c6ee880adf29cd86bcd32b0c988eb9cc4fd Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Case: DIP6
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 35Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
auf Bestellung 548 Stücke:
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28+2.57 EUR
37+1.94 EUR
39+1.84 EUR
50+1.82 EUR
250+1.77 EUR
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CLA80E1200HF CLA80E1200HF IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A0F0061E2F7B6143&compId=CLA80E1200HF.pdf?ci_sign=92b34dd44e4b0b4d546dbee16db25f9f13c9c6cf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Max. off-state voltage: 1.2kV
Load current: 80A
Case: PLUS247™
Mounting: THT
Max. load current: 126A
Max. forward impulse current: 765A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 38mA
auf Bestellung 246 Stücke:
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9+8.12 EUR
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CPC1718J CPC1718J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49316DB8320C7&compId=CPC1718.pdf?ci_sign=bfe670bb7367963f0d1f7cc03edd903cea5b35fc Category: DC Solid State Relays
Description: Relay: solid state; 8500mA; max.100VDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Max. operating current: 8.5A
Switched voltage: max. 100V DC
Mounting: THT
Case: ISOPLUS264™
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Contacts configuration: SPST-NO
On-state resistance: 75mΩ
Control current max.: 100mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
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CPC1125NTR CPC1125NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20B60C7&compId=CPC1125N.pdf?ci_sign=37beec7290e33484c75fff726185ce9ab1651de2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
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CPC1225N CPC1225N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003A60C7&compId=CPC1225N.pdf?ci_sign=4ce0245a05e1666e017a4e8632ce448230354fc0 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
auf Bestellung 113 Stücke:
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35+2.06 EUR
40+1.79 EUR
44+1.66 EUR
46+1.57 EUR
100+1.52 EUR
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CPC1225NTR CPC1225NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003A60C7&compId=CPC1225N.pdf?ci_sign=4ce0245a05e1666e017a4e8632ce448230354fc0 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
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PLA192E PLA192E IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7420C7&compId=PLA192.pdf?ci_sign=bfe483f544d298e4de07c75ff90ef6a0b18f5d8b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
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IXFK120N20P IXFK120N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9869832FD820&compId=IXFH(K)120N20P.pdf?ci_sign=ab9ee0cda8be66ad18abdb1fb39f266891be68ee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 152nC
On-state resistance: 22mΩ
Drain current: 120A
Drain-source voltage: 200V
Power dissipation: 714W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXTK120N20P IXTK120N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9109183E093E27&compId=IXTK120N20P-DTE.pdf?ci_sign=8d92652847182241575b90496cedc624b85642c3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264
Case: TO264
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 714W
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Technology: PolarHT™
Kind of package: tube
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MG12150W-XN2MM IXYS littelfuse_power_semiconductor_igbt_module_mg12150w_xn2mm_datasheet.pdf.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: package W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
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CPC1964B CPC1964B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81D00C7&compId=CPC1964B.pdf?ci_sign=9f2b4265d7b4c89d5a94e1e2cec60cfd4eca4f30 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Mounting: SMT
Case: SO8
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CPC1964BX6 CPC1964BX6 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81E40C7&compId=CPC1964BX6.pdf?ci_sign=9b9c3e34b7e7142d60cacdfccc00e5c72159f0b0 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Mounting: SMT
Case: SO8
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IXDN630YI IXDN630YI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
auf Bestellung 118 Stücke:
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9+8.14 EUR
25+7.84 EUR
50+7.82 EUR
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IXDN630MCI IXDN630MCI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 9...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
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MIXG240W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
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MIXG240RF1200PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Semiconductor structure: diode/transistor
Topology: boost chopper
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit
Mechanical mounting: screw
Collector current: 250A
Max. off-state voltage: 1.2kV
Case: E2-Pack PFP
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MIXG240W1200PZTEH IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6DCE85AEE6B20D6&compId=MIXG240W1200PZTEH.pdf?ci_sign=f2d3a18c01367c0559f2b604264f860dda0ca401 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Semiconductor structure: transistor/transistor
Topology: current shunt; IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
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XAA117S XAA117S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
auf Bestellung 250 Stücke:
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IXTN30N100L IXTN30N100L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA762DDC51FD820&compId=IXTN30N100L.pdf?ci_sign=1267cd27b10289fdcc054aa2d6c82d9805b1b00e Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 30A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.45Ω
Pulsed drain current: 70A
Power dissipation: 800W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 545nC
Reverse recovery time: 1µs
Gate-source voltage: ±40V
Mechanical mounting: screw
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IXTB30N100L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B916FF820&compId=IXTB30N100L.pdf?ci_sign=733db101b859fd094ce1250c8d84c21345092274 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Drain-source voltage: 1kV
Drain current: 30A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 0.45Ω
Power dissipation: 800W
Kind of channel: enhancement
Gate charge: 545nC
Reverse recovery time: 1µs
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: linear power mosfet
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IXTA130N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEFB1FFB9060D2&compId=IXTA130N10T.PDF?ci_sign=69dce128b1e5f50f401f8f86e0fd7cb4446cbc18 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
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IXTA130N10T-TRL IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEFB1FFB9060D2&compId=IXTA130N10T.PDF?ci_sign=69dce128b1e5f50f401f8f86e0fd7cb4446cbc18 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
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IXTA130N10T7 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEF7B5A4BC20D2&compId=IXTA130N10T7.PDF?ci_sign=72380c18aa9ffac0654aa9ca714129b806c8c025 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
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DPG80C300HB DPG80C300HB IXYS DPG80C300HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 40Ax2; tube; Ifsm: 450A; TO247-3; 215W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Power dissipation: 215W
Max. forward voltage: 1.36V
Max. forward impulse current: 0.45kA
Load current: 40A x2
Max. off-state voltage: 300V
auf Bestellung 244 Stücke:
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DPG30C300PB DPG30C300PB IXYS Littelfuse-Power-Semiconductors-DPG30C300PB-Datasheet?assetguid=C29230B4-702B-4553-95E4-41ABDC8A3A6D Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
Max. forward voltage: 1.26V
Max. forward impulse current: 0.24kA
Load current: 15A x2
Max. off-state voltage: 300V
auf Bestellung 148 Stücke:
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DPG60C300QB DPG60C300QB IXYS Littelfuse-Power-Semiconductors-DPG60C300QB-Datasheet?assetguid=38393FCB-5AF1-4A3C-B2C9-F6797A3D1C35 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO3P
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Power dissipation: 160W
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Load current: 30A x2
Max. off-state voltage: 300V
auf Bestellung 36 Stücke:
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DPF60C300HB DPF60C300HB IXYS DPF60C300HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Max. forward voltage: 0.97V
Max. forward impulse current: 0.4kA
Load current: 30A x2
Max. off-state voltage: 300V
auf Bestellung 13 Stücke:
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DPG30C300HB DPG30C300HB IXYS Littelfuse-Power-Semiconductors-DPG30C300HB-Datasheet?assetguid=0400F707-7AFD-48EB-9257-C3597E59CCC5 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Power dissipation: 90W
Max. forward voltage: 1.25V
Max. forward impulse current: 0.24kA
Load current: 15A x2
Max. off-state voltage: 300V
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IXTQ470P2 IXTQ470P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13FF820&compId=IXTQ470P2.pdf?ci_sign=76af40f262edd6db225179a4687589ac6121f39b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 88nC
Reverse recovery time: 400ns
Drain current: 42A
Drain-source voltage: 500V
Power dissipation: 830W
Kind of channel: enhancement
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MKE38RK600DFELB IXYS MKE38RK600DFELB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of channel: enhancement
Reverse recovery time: 50ns
Semiconductor structure: diode/transistor
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IXTH120P065T IXTH120P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
auf Bestellung 56 Stücke:
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8+9.64 EUR
11+6.66 EUR
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IXFT140N20X3HV IXFT140N20X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Mounting: SMD
Polarisation: unipolar
Case: TO268
Drain current: 140A
Kind of package: tube
Drain-source voltage: 200V
Gate charge: 127nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Reverse recovery time: 90ns
Type of transistor: N-MOSFET
Power dissipation: 520W
Produkt ist nicht verfügbar
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CS30-12IO1 CS30-12IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C4E460781E27&compId=CS30-12IO1-DTE.pdf?ci_sign=e71831bbd611d0d403ce659e4ecabb1a51f3954c Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO247AD
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 55mA
auf Bestellung 271 Stücke:
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9+8.01 EUR
15+5 EUR
16+4.73 EUR
30+4.7 EUR
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IXTK22N100L IXTK22N100L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD1D9980B2F820&compId=IXTK(X)22N100L.pdf?ci_sign=0615493c1b1063422d61a154cca03734f6f66ba8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; TO264; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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DPF80C200HB DPF80C200HB IXYS DPF80C200HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Case: TO247-3
Reverse recovery time: 55ns
Max. forward voltage: 1.22V
Load current: 40A x2
Power dissipation: 215W
Max. off-state voltage: 200V
Max. forward impulse current: 560A
Kind of package: tube
auf Bestellung 2 Stücke:
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DPG60C200HB DPG60C200HB IXYS Littelfuse-Power-Semiconductors-DPG60C200HB-Datasheet?assetguid=87B6D095-C8C9-4D2A-9030-B3214D70FAF8 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 274 Stücke:
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DPG60C200QB DPG60C200QB IXYS Littelfuse-Power-Semiconductors-DPG60C200QB-Datasheet?assetguid=1B2C1EA9-F199-4CC1-83AF-AEB704688BF1 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Case: TO3P
Max. off-state voltage: 200V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 46 Stücke:
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24+3.09 EUR
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DPG30C200PB DPG30C200PB IXYS media?resourcetype=datasheets&itemid=414E16FE-8690-49CD-8C7F-B7A69B76A7C3&filename=Littelfuse-Power-Semiconductors-DPG30C200PB-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Case: TO220AB
Max. off-state voltage: 200V
Max. forward voltage: 1.26V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
auf Bestellung 74 Stücke:
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38+1.92 EUR
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47+1.53 EUR
49+1.47 EUR
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DPF60C200HJ DPF60C200HJ IXYS DPF60C200HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™
Case: ISOPLUS247™
Max. off-state voltage: 200V
Max. forward voltage: 0.88V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 560A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 38 Stücke:
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17+4.32 EUR
19+3.89 EUR
20+3.6 EUR
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22+3.4 EUR
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DPG30C200HB DPG30C200HB IXYS media?resourcetype=datasheets&itemid=C7522524-F8A5-4F62-BC19-FCC564D51D7C&filename=Littelfuse-Power-Semiconductors-DPG30C200HB-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 1.25V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 24 Stücke:
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DPF60C200HB DPF60C200HB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 400A; TO247-3
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 0.91V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 1 Stücke:
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IXTP32P05T IXTP32P05T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0CA1113E4F8BF&compId=IXT_32P05T.pdf?ci_sign=db5aa0628442a2ab696c43214df8755287bd452e Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Type of transistor: P-MOSFET
Mounting: THT
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Reverse recovery time: 26ns
Gate charge: 46nC
On-state resistance: 39mΩ
Gate-source voltage: ±15V
Kind of channel: enhancement
Power dissipation: 83W
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14+5.11 EUR
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IXTP32P20T IXTP32P20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EF0A8A8C018BF&compId=IXT_32P20T.pdf?ci_sign=6bc8fc2e384d370d1b27158e2571e9d58c0bf6c0 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Type of transistor: P-MOSFET
Mounting: THT
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Reverse recovery time: 190ns
Gate charge: 185nC
On-state resistance: 0.13Ω
Gate-source voltage: ±15V
Kind of channel: enhancement
Power dissipation: 300W
auf Bestellung 300 Stücke:
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10+7.31 EUR
50+7.28 EUR
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LF2388BTR LF2388BTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F27C32DDFA40CE&compId=LF2388BTR.pdf?ci_sign=0ffe7b00e916e274b61faec0bc85889558573824 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Supply voltage: 10...20V
Mounting: SMD
Case: SO20
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -750...420mA
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
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IXTH10P50P IXTH10P50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Case: TO247-3
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -10A
Gate charge: 50nC
Reverse recovery time: 414ns
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Kind of package: tube
auf Bestellung 278 Stücke:
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8+9.95 EUR
10+7.34 EUR
11+6.94 EUR
30+6.72 EUR
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VUO160-12NO7 VUO160-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9A8DFE8BA867D00C1&compId=VUO160-12NO7.pdf?ci_sign=136f747c61c846a4a04c699a7ef63ecfe8b877e7 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.39V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
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VBO160-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FE6EAF9559E0C4&compId=VBO160-12NO7.pdf?ci_sign=8e8a21a127e0cde42148fe3b754eaf87ebd9d0cd Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 160A; Ifsm: 2.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 160A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
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IXTH6N50D2 IXTH6N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 219 Stücke:
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7+10.72 EUR
11+6.84 EUR
12+6.46 EUR
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IXTP6N50D2 IXTP6N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 162 Stücke:
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12+6.31 EUR
13+5.95 EUR
Mindestbestellmenge: 8
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IXTA08N100D2 IXTA08N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D5010345B820&compId=IXTA(P%2CY)08N100D2.pdf?ci_sign=ff8d8aff111d8414478644545169c45d10c4ed47 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 325nC
On-state resistance: 21Ω
Drain current: 0.8A
Power dissipation: 60W
Drain-source voltage: 1kV
Kind of channel: depletion
Case: TO263
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.49 EUR
31+2.33 EUR
33+2.2 EUR
100+2.12 EUR
Mindestbestellmenge: 16
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CPC3980ZTR CPC3980ZTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE791A01894B3780746&compId=CPC3980.pdf?ci_sign=4477efd49cd6b0ec4bf7ba5fcdd87ec36338421c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.72 EUR
66+1.09 EUR
79+0.91 EUR
115+0.62 EUR
122+0.59 EUR
500+0.57 EUR
Mindestbestellmenge: 42
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CPC3708CTR CPC3708CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6EE5EB2B07820&compId=CPC3708.pdf?ci_sign=22daf6dfcbd2ce4c3bce7bb6c7b8c06a4717c6f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 3215 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
113+0.63 EUR
141+0.51 EUR
149+0.48 EUR
1000+0.46 EUR
Mindestbestellmenge: 99
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CPC3960ZTR CPC3960ZTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC71CB207519820&compId=CPC3960.pdf?ci_sign=98abdb9ca19f419f79fba375011eb85cc29ea29f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 44Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 939 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
114+0.63 EUR
130+0.55 EUR
137+0.52 EUR
250+0.5 EUR
Mindestbestellmenge: 100
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CPC3708ZTR CPC3708ZTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6EE5EB2B07820&compId=CPC3708.pdf?ci_sign=22daf6dfcbd2ce4c3bce7bb6c7b8c06a4717c6f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 895 Stücke:
Lieferzeit 14-21 Tag (e)
82+0.87 EUR
122+0.59 EUR
237+0.3 EUR
250+0.29 EUR
Mindestbestellmenge: 82
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CPC3730CTR CPC3730CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC708F10FBC7820&compId=CPC3730.pdf?ci_sign=2122ae37c6b47f9d655a2287b1f346ae35245869 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.14A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.1 EUR
Mindestbestellmenge: 23
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IXTQ22N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDA40D50235820&compId=IXTH(Q%2CV)22N50P_S.pdf?ci_sign=ce2412085be3e0bce70371fe953f27e347b1e073
IXTQ22N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
16+4.52 EUR
17+4.28 EUR
Mindestbestellmenge: 10
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IXFH22N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC111820&compId=IXFH22N50P.pdf?ci_sign=8586e5293aa35f9bb95f912636881d81bf896a89
IXFH22N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 226 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.42 EUR
13+5.52 EUR
14+5.22 EUR
120+5.02 EUR
Mindestbestellmenge: 10
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IXFH52N50P2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4B656662E1820&compId=IXFH(T)52N50P2.pdf?ci_sign=7c44fe5509f3cb92524e6dfee4e7d8922d30699d
IXFH52N50P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 113nC
On-state resistance: 0.12Ω
Drain current: 52A
Drain-source voltage: 500V
Power dissipation: 960W
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.04 EUR
7+10.57 EUR
8+10 EUR
Mindestbestellmenge: 6
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MMIX1F132N50P3 littelfuse_discrete_mosfets_smpd_packages_mmix1f132n50p3_datasheet.pdf.pdf
MMIX1F132N50P3
+1
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Pulsed drain current: 330A
Power dissipation: 520W
Technology: HiPerFET™; Polar3™
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+48.19 EUR
10+46.33 EUR
Mindestbestellmenge: 2
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IXTH22N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDA40D50235820&compId=IXTH(Q%2CV)22N50P_S.pdf?ci_sign=ce2412085be3e0bce70371fe953f27e347b1e073
IXTH22N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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LCA110 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF03E0C7&compId=LCA110.pdf?ci_sign=c8142c6ee880adf29cd86bcd32b0c988eb9cc4fd
LCA110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Case: DIP6
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 35Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
auf Bestellung 548 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
37+1.94 EUR
39+1.84 EUR
50+1.82 EUR
250+1.77 EUR
Mindestbestellmenge: 28
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CLA80E1200HF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A0F0061E2F7B6143&compId=CLA80E1200HF.pdf?ci_sign=92b34dd44e4b0b4d546dbee16db25f9f13c9c6cf
CLA80E1200HF
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Max. off-state voltage: 1.2kV
Load current: 80A
Case: PLUS247™
Mounting: THT
Max. load current: 126A
Max. forward impulse current: 765A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 38mA
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.84 EUR
9+8.12 EUR
10+7.81 EUR
Mindestbestellmenge: 7
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CPC1718J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49316DB8320C7&compId=CPC1718.pdf?ci_sign=bfe670bb7367963f0d1f7cc03edd903cea5b35fc
CPC1718J
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 8500mA; max.100VDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Max. operating current: 8.5A
Switched voltage: max. 100V DC
Mounting: THT
Case: ISOPLUS264™
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Contacts configuration: SPST-NO
On-state resistance: 75mΩ
Control current max.: 100mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Produkt ist nicht verfügbar
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CPC1125NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20B60C7&compId=CPC1125N.pdf?ci_sign=37beec7290e33484c75fff726185ce9ab1651de2
CPC1125NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Produkt ist nicht verfügbar
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CPC1225N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003A60C7&compId=CPC1225N.pdf?ci_sign=4ce0245a05e1666e017a4e8632ce448230354fc0
CPC1225N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.06 EUR
40+1.79 EUR
44+1.66 EUR
46+1.57 EUR
100+1.52 EUR
Mindestbestellmenge: 35
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CPC1225NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003A60C7&compId=CPC1225N.pdf?ci_sign=4ce0245a05e1666e017a4e8632ce448230354fc0
CPC1225NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Produkt ist nicht verfügbar
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PLA192E pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7420C7&compId=PLA192.pdf?ci_sign=bfe483f544d298e4de07c75ff90ef6a0b18f5d8b
PLA192E
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
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IXFK120N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9869832FD820&compId=IXFH(K)120N20P.pdf?ci_sign=ab9ee0cda8be66ad18abdb1fb39f266891be68ee
IXFK120N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 152nC
On-state resistance: 22mΩ
Drain current: 120A
Drain-source voltage: 200V
Power dissipation: 714W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXTK120N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9109183E093E27&compId=IXTK120N20P-DTE.pdf?ci_sign=8d92652847182241575b90496cedc624b85642c3
IXTK120N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264
Case: TO264
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 714W
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Technology: PolarHT™
Kind of package: tube
Produkt ist nicht verfügbar
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MG12150W-XN2MM littelfuse_power_semiconductor_igbt_module_mg12150w_xn2mm_datasheet.pdf.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: package W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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CPC1964B pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81D00C7&compId=CPC1964B.pdf?ci_sign=9f2b4265d7b4c89d5a94e1e2cec60cfd4eca4f30
CPC1964B
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Mounting: SMT
Case: SO8
Produkt ist nicht verfügbar
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CPC1964BX6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81E40C7&compId=CPC1964BX6.pdf?ci_sign=9b9c3e34b7e7142d60cacdfccc00e5c72159f0b0
CPC1964BX6
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Mounting: SMT
Case: SO8
Produkt ist nicht verfügbar
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IXDN630YI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDN630YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.28 EUR
9+8.14 EUR
25+7.84 EUR
50+7.82 EUR
Mindestbestellmenge: 7
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IXDN630MCI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDN630MCI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 9...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.03 EUR
9+8.14 EUR
25+7.85 EUR
Mindestbestellmenge: 6
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MIXG240W1200PTEH
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
Produkt ist nicht verfügbar
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MIXG240RF1200PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Semiconductor structure: diode/transistor
Topology: boost chopper
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit
Mechanical mounting: screw
Collector current: 250A
Max. off-state voltage: 1.2kV
Case: E2-Pack PFP
Produkt ist nicht verfügbar
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MIXG240W1200PZTEH pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6DCE85AEE6B20D6&compId=MIXG240W1200PZTEH.pdf?ci_sign=f2d3a18c01367c0559f2b604264f860dda0ca401
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Semiconductor structure: transistor/transistor
Topology: current shunt; IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
Produkt ist nicht verfügbar
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XAA117S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
XAA117S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.13 EUR
31+2.35 EUR
33+2.22 EUR
250+2.17 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IXTN30N100L pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA762DDC51FD820&compId=IXTN30N100L.pdf?ci_sign=1267cd27b10289fdcc054aa2d6c82d9805b1b00e
IXTN30N100L
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 30A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.45Ω
Pulsed drain current: 70A
Power dissipation: 800W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 545nC
Reverse recovery time: 1µs
Gate-source voltage: ±40V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTB30N100L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B916FF820&compId=IXTB30N100L.pdf?ci_sign=733db101b859fd094ce1250c8d84c21345092274
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Drain-source voltage: 1kV
Drain current: 30A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 0.45Ω
Power dissipation: 800W
Kind of channel: enhancement
Gate charge: 545nC
Reverse recovery time: 1µs
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA130N10T pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEFB1FFB9060D2&compId=IXTA130N10T.PDF?ci_sign=69dce128b1e5f50f401f8f86e0fd7cb4446cbc18
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA130N10T-TRL pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEFB1FFB9060D2&compId=IXTA130N10T.PDF?ci_sign=69dce128b1e5f50f401f8f86e0fd7cb4446cbc18
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA130N10T7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEF7B5A4BC20D2&compId=IXTA130N10T7.PDF?ci_sign=72380c18aa9ffac0654aa9ca714129b806c8c025
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DPG80C300HB DPG80C300HB.pdf
DPG80C300HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 40Ax2; tube; Ifsm: 450A; TO247-3; 215W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Power dissipation: 215W
Max. forward voltage: 1.36V
Max. forward impulse current: 0.45kA
Load current: 40A x2
Max. off-state voltage: 300V
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.15 EUR
11+6.56 EUR
12+6.21 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
DPG30C300PB Littelfuse-Power-Semiconductors-DPG30C300PB-Datasheet?assetguid=C29230B4-702B-4553-95E4-41ABDC8A3A6D
DPG30C300PB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
Max. forward voltage: 1.26V
Max. forward impulse current: 0.24kA
Load current: 15A x2
Max. off-state voltage: 300V
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.75 EUR
21+3.42 EUR
27+2.7 EUR
28+2.56 EUR
50+2.55 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
DPG60C300QB Littelfuse-Power-Semiconductors-DPG60C300QB-Datasheet?assetguid=38393FCB-5AF1-4A3C-B2C9-F6797A3D1C35
DPG60C300QB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO3P
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Power dissipation: 160W
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Load current: 30A x2
Max. off-state voltage: 300V
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.69 EUR
15+5.03 EUR
16+4.76 EUR
30+4.58 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
DPF60C300HB DPF60C300HB.pdf
DPF60C300HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Max. forward voltage: 0.97V
Max. forward impulse current: 0.4kA
Load current: 30A x2
Max. off-state voltage: 300V
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.98 EUR
10+7.15 EUR
11+6.76 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
DPG30C300HB Littelfuse-Power-Semiconductors-DPG30C300HB-Datasheet?assetguid=0400F707-7AFD-48EB-9257-C3597E59CCC5
DPG30C300HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Power dissipation: 90W
Max. forward voltage: 1.25V
Max. forward impulse current: 0.24kA
Load current: 15A x2
Max. off-state voltage: 300V
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.51 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ470P2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13FF820&compId=IXTQ470P2.pdf?ci_sign=76af40f262edd6db225179a4687589ac6121f39b
IXTQ470P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 88nC
Reverse recovery time: 400ns
Drain current: 42A
Drain-source voltage: 500V
Power dissipation: 830W
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MKE38RK600DFELB MKE38RK600DFELB.pdf
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of channel: enhancement
Reverse recovery time: 50ns
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH120P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7
IXTH120P065T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.64 EUR
11+6.66 EUR
30+6.42 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXFT140N20X3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFT140N20X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Mounting: SMD
Polarisation: unipolar
Case: TO268
Drain current: 140A
Kind of package: tube
Drain-source voltage: 200V
Gate charge: 127nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Reverse recovery time: 90ns
Type of transistor: N-MOSFET
Power dissipation: 520W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CS30-12IO1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C4E460781E27&compId=CS30-12IO1-DTE.pdf?ci_sign=e71831bbd611d0d403ce659e4ecabb1a51f3954c
CS30-12IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO247AD
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 55mA
auf Bestellung 271 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.01 EUR
15+5 EUR
16+4.73 EUR
30+4.7 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXTK22N100L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD1D9980B2F820&compId=IXTK(X)22N100L.pdf?ci_sign=0615493c1b1063422d61a154cca03734f6f66ba8
IXTK22N100L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; TO264; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DPF80C200HB DPF80C200HB.pdf
DPF80C200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Case: TO247-3
Reverse recovery time: 55ns
Max. forward voltage: 1.22V
Load current: 40A x2
Power dissipation: 215W
Max. off-state voltage: 200V
Max. forward impulse current: 560A
Kind of package: tube
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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DPG60C200HB Littelfuse-Power-Semiconductors-DPG60C200HB-Datasheet?assetguid=87B6D095-C8C9-4D2A-9030-B3214D70FAF8
DPG60C200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.28 EUR
11+6.55 EUR
14+5.21 EUR
15+4.92 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
DPG60C200QB Littelfuse-Power-Semiconductors-DPG60C200QB-Datasheet?assetguid=1B2C1EA9-F199-4CC1-83AF-AEB704688BF1
DPG60C200QB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Case: TO3P
Max. off-state voltage: 200V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.15 EUR
24+3.09 EUR
25+2.92 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
DPG30C200PB media?resourcetype=datasheets&itemid=414E16FE-8690-49CD-8C7F-B7A69B76A7C3&filename=Littelfuse-Power-Semiconductors-DPG30C200PB-Datasheet
DPG30C200PB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Case: TO220AB
Max. off-state voltage: 200V
Max. forward voltage: 1.26V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.92 EUR
42+1.73 EUR
47+1.53 EUR
49+1.47 EUR
52+1.4 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
DPF60C200HJ DPF60C200HB.pdf
DPF60C200HJ
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™
Case: ISOPLUS247™
Max. off-state voltage: 200V
Max. forward voltage: 0.88V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 560A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.32 EUR
19+3.89 EUR
20+3.6 EUR
21+3.45 EUR
22+3.4 EUR
30+3.27 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
DPG30C200HB media?resourcetype=datasheets&itemid=C7522524-F8A5-4F62-BC19-FCC564D51D7C&filename=Littelfuse-Power-Semiconductors-DPG30C200HB-Datasheet
DPG30C200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 1.25V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.19 EUR
24+2.97 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
DPF60C200HB
DPF60C200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 400A; TO247-3
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 0.91V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTP32P05T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0CA1113E4F8BF&compId=IXT_32P05T.pdf?ci_sign=db5aa0628442a2ab696c43214df8755287bd452e
IXTP32P05T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Type of transistor: P-MOSFET
Mounting: THT
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Reverse recovery time: 26ns
Gate charge: 46nC
On-state resistance: 39mΩ
Gate-source voltage: ±15V
Kind of channel: enhancement
Power dissipation: 83W
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.11 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXTP32P20T pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EF0A8A8C018BF&compId=IXT_32P20T.pdf?ci_sign=6bc8fc2e384d370d1b27158e2571e9d58c0bf6c0
IXTP32P20T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Type of transistor: P-MOSFET
Mounting: THT
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Reverse recovery time: 190ns
Gate charge: 185nC
On-state resistance: 0.13Ω
Gate-source voltage: ±15V
Kind of channel: enhancement
Power dissipation: 300W
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.45 EUR
10+7.31 EUR
50+7.28 EUR
Mindestbestellmenge: 7
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LF2388BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F27C32DDFA40CE&compId=LF2388BTR.pdf?ci_sign=0ffe7b00e916e274b61faec0bc85889558573824
LF2388BTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Supply voltage: 10...20V
Mounting: SMD
Case: SO20
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -750...420mA
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Produkt ist nicht verfügbar
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IXTH10P50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e
IXTH10P50P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Case: TO247-3
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -10A
Gate charge: 50nC
Reverse recovery time: 414ns
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Kind of package: tube
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.95 EUR
10+7.34 EUR
11+6.94 EUR
30+6.72 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
VUO160-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9A8DFE8BA867D00C1&compId=VUO160-12NO7.pdf?ci_sign=136f747c61c846a4a04c699a7ef63ecfe8b877e7
VUO160-12NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.39V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+72.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH
VBO160-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FE6EAF9559E0C4&compId=VBO160-12NO7.pdf?ci_sign=8e8a21a127e0cde42148fe3b754eaf87ebd9d0cd
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 160A; Ifsm: 2.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 160A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH6N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187
IXTH6N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.72 EUR
11+6.84 EUR
12+6.46 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTP6N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187
IXTP6N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.62 EUR
12+6.31 EUR
13+5.95 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTA08N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D5010345B820&compId=IXTA(P%2CY)08N100D2.pdf?ci_sign=ff8d8aff111d8414478644545169c45d10c4ed47
IXTA08N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 325nC
On-state resistance: 21Ω
Drain current: 0.8A
Power dissipation: 60W
Drain-source voltage: 1kV
Kind of channel: depletion
Case: TO263
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.49 EUR
31+2.33 EUR
33+2.2 EUR
100+2.12 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
CPC3980ZTR pVersion=0046&contRep=ZT&docId=005056AB752F1EE791A01894B3780746&compId=CPC3980.pdf?ci_sign=4477efd49cd6b0ec4bf7ba5fcdd87ec36338421c
CPC3980ZTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
66+1.09 EUR
79+0.91 EUR
115+0.62 EUR
122+0.59 EUR
500+0.57 EUR
Mindestbestellmenge: 42
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CPC3708CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6EE5EB2B07820&compId=CPC3708.pdf?ci_sign=22daf6dfcbd2ce4c3bce7bb6c7b8c06a4717c6f1
CPC3708CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 3215 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
113+0.63 EUR
141+0.51 EUR
149+0.48 EUR
1000+0.46 EUR
Mindestbestellmenge: 99
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CPC3960ZTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC71CB207519820&compId=CPC3960.pdf?ci_sign=98abdb9ca19f419f79fba375011eb85cc29ea29f
CPC3960ZTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 44Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 939 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
114+0.63 EUR
130+0.55 EUR
137+0.52 EUR
250+0.5 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
CPC3708ZTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6EE5EB2B07820&compId=CPC3708.pdf?ci_sign=22daf6dfcbd2ce4c3bce7bb6c7b8c06a4717c6f1
CPC3708ZTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 895 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
122+0.59 EUR
237+0.3 EUR
250+0.29 EUR
Mindestbestellmenge: 82
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CPC3730CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC708F10FBC7820&compId=CPC3730.pdf?ci_sign=2122ae37c6b47f9d655a2287b1f346ae35245869
CPC3730CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.14A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.1 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
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