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LDA212STR LDA212STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACFA49FC501EC&compId=LDA212.pdf?ci_sign=e72cb57335934dbfa047478f021fb2d5b300c2bc Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
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LDA213STR LDA213STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AD204370281EC&compId=LDA213.pdf?ci_sign=6bf1f535cde47fa270dceaf89ce0b7c1d34729da Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
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IXTP10P50P IXTP10P50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 414ns
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.94 EUR
14+5.32 EUR
15+5.03 EUR
50+4.93 EUR
100+4.83 EUR
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IXTP10P15T IXTP10P15T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03840D407D8BF&compId=IXT_10P15T.pdf?ci_sign=aab868e73793fd93dd8185240cab19c3a6c680af Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
auf Bestellung 24 Stücke:
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IXTP102N15T IXTP102N15T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12E1820&compId=IXTA(H%2CP%2CQ)102N15T.pdf?ci_sign=a7dd4f01d2a4226a8b0a38e27af5b16600fca392 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 97ns
Features of semiconductor devices: thrench gate power mosfet
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MDMA450UB1600PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
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MDMA360UB1600PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
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MDMA210UB1600PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mechanical mounting: screw
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MDMA280UB1600PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mechanical mounting: screw
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IXTA120N04T2 IXTA120N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA2CF46A37D820&compId=IXTA(P)120N04T2.pdf?ci_sign=9781234723d86244a767988de041b1dde0e2fcc1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
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IXTH420N04T2 IXTH420N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494E9820&compId=IXTH420N04T2.pdf?ci_sign=9304d2c9a0f1384c4669abc672571b3f8ebff765 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA220N04T2 IXTA220N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC709D95CCF820&compId=IXTA(P)220N04T2.pdf?ci_sign=1db27c209e7af5f3f0d648bd91c318079852def5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA220N04T2-7 IXTA220N04T2-7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC7E9820&compId=IXTA220N04T2-7.pdf?ci_sign=dfbe0e0fc65622b215cc5fc0881ade14b823b82d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
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IXTN17N120L IXTN17N120L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA81B9EFCD51820&compId=IXTN17N120L.pdf?ci_sign=67609d109998c6dd7eef97d1d408d6559bb9508b Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 15A
Case: SOT227B
Electrical mounting: screw
On-state resistance: 0.9Ω
Pulsed drain current: 34A
Power dissipation: 540W
Technology: Linear™
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 1.83µs
Polarisation: unipolar
Gate charge: 155nC
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IXFA36N60X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa36n60x3-datasheet?assetguid=9c561014-ffa0-419b-994f-22f5fa914d61 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Mounting: SMD
Reverse recovery time: 180ns
Drain-source voltage: 600V
Drain current: 36A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: TO263
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IXFH36N60X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh36n60x3-datasheet?assetguid=38271253-e2cd-4f1f-b434-c9ed8035371e Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Mounting: THT
Reverse recovery time: 180ns
Drain-source voltage: 600V
Drain current: 36A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: TO247-3
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IXFH48N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh48n60x3_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Mounting: THT
Reverse recovery time: 163ns
Drain-source voltage: 600V
Drain current: 48A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Gate charge: 38nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 68A
Case: TO247-3
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IXFH78N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh78n60x3_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 78A; Idm: 120A; 780W
Mounting: THT
Reverse recovery time: 205ns
Drain-source voltage: 600V
Drain current: 78A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Kind of package: tube
Gate charge: 70nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: TO247-3
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IXFH98N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh98n60x3_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 98A; Idm: 160A; 960W
Mounting: THT
Reverse recovery time: 220ns
Drain-source voltage: 600V
Drain current: 98A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 90nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 160A
Case: TO247-3
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IXFP36N60X3 IXFP36N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp36n60x3_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Mounting: THT
Reverse recovery time: 180ns
Drain-source voltage: 600V
Drain current: 36A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: TO220AB
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MID145-12A3 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5
Case: Y4-M5
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 200A
Application: fans; for pump; motors; photovoltaics
Power dissipation: 700W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: NPT
Topology: boost chopper
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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VUO122-12NO7 VUO122-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88959542B90DE0C4&compId=VUO122-12NO7.pdf?ci_sign=496930c95e7335bb9c77cbb977a1448c9cbb1872 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 125A; Ifsm: 1kA
Case: ECO-PAC 2
Max. forward impulse current: 1kA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Leads: wire Ø 1.5mm
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.13V
Load current: 125A
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DSEC60-12A DSEC60-12A IXYS Littelfuse-Power-Semiconductors-DSEC60-12A-Datasheet?assetguid=209f6ea6-9eb4-4faf-a3e4-37cae54527a2 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30Ax2; tube; Ifsm: 200A; TO247-3; 165W
Case: TO247-3
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.74V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Max. forward impulse current: 200A
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DSSK28-006BS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC3686BF0EA60C4&compId=DSSK28-006BS.pdf?ci_sign=8d6a2a9b8016799440366e8ba8e32fee545733ca Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15Ax2; tube; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.52V
Max. forward impulse current: 0.3kA
Kind of package: tube
Max. load current: 35A
Power dissipation: 90W
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VUO80-18NO1 VUO80-18NO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88804BA7A478C0C4&compId=VUO80-18NO1.pdf?ci_sign=230cb5428898efb51f6bd7b4c3578050ad14cd4d Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
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VUO80-08NO1 VUO80-08NO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888040ECC780A0C4&compId=VUO80-08NO1.pdf?ci_sign=e6d40f359ac5c2632936a852c26710ff913b947c Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
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IXFP230N075T2 IXFP230N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD0BBC1F507820&compId=IXFA(P)230N075T2.pdf?ci_sign=a193bb6c937ab8a381de2b728ab686af5cf3de01 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
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LOC112S LOC112S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADF4EA9EF01EC&compId=LOC112P.pdf?ci_sign=8cbac573205132593f6f59bb6199ad1903ebb2fb Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Type of optocoupler: optocoupler
auf Bestellung 100 Stücke:
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27+2.69 EUR
32+2.26 EUR
33+2.19 EUR
35+2.1 EUR
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IXTH90P10P IXTH90P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA05F2055B718BF&compId=IXT_90P10P.pdf?ci_sign=874a10be422ad2b256b9a661a7f0701651c5c108 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Drain-source voltage: -100V
Drain current: -90A
Gate charge: 0.12µC
Reverse recovery time: 144ns
On-state resistance: 25mΩ
Power dissipation: 462W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: TO247-3
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
6+14.06 EUR
8+9.09 EUR
120+8.75 EUR
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IXTA60N10T IXTA60N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO263
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
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IXFK360N10T IXFK360N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBEC3CAC2D3820&compId=IXFK(X)360N10T.pdf?ci_sign=3e3c42ae502f5134306933943e750d4d7a30bb3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXFN32N120P IXFN32N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA83FC27C19F820&compId=IXFN32N120P.pdf?ci_sign=21e350967878f792e5cbabfa7c9da6eeff737a7c Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.31Ω
Gate charge: 360nC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
Semiconductor structure: single transistor
Pulsed drain current: 100A
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXFZ140N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC69D820&compId=IXFZ140N25T.pdf?ci_sign=952f429967276dca1a61b9a4cdcb8892aedde274 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 445W
Case: DE475
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXGH16N170 IXGH16N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAB99F1D44C151BF&compId=IXGH16N170-DTE.pdf?ci_sign=03a18b66e5d35198e9e236f78cf7b52f7cc4d616 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXGH16N170A IXGH16N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
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IXFK420N10T IXFK420N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA57BFF6D4A18BF&compId=IXFK420N10T_IXFX420N10T.pdf?ci_sign=f703b8f2c268b8e9ba07cd2c3e4e8ce0b331312c Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
auf Bestellung 18 Stücke:
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4+18.75 EUR
5+17.73 EUR
Mindestbestellmenge: 4
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IXFH20N100P IXFH20N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECE728CC0A18BF&compId=IXF_20N100P.pdf?ci_sign=e2a539356f4e584bf4dad0014f01227b046bdbad Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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IXFN420N10T IXFN420N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AC87B9628D208143&compId=IXFN420N10T.pdf?ci_sign=b6ca25fc8c12b8d526ebadade3bda0c6322075d3 Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.3mΩ
Gate charge: 670nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 140ns
Electrical mounting: screw
Mechanical mounting: screw
Technology: GigaMOS™; HiPerFET™
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXFH320N10T2 IXFH320N10T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2856F4A8DDE7820&compId=IXFH(T)320N10T2.pdf?ci_sign=712ea63a2238f63f81d01689168cb986a264e110 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 98ns
Features of semiconductor devices: thrench gate power mosfet
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MMIX1F420N10T IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 334A
Pulsed drain current: 1kA
Power dissipation: 680W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 670nC
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
Produkt ist nicht verfügbar
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IXXH30N65C4D1 IXXH30N65C4D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8EFE36A0F9820&compId=IXXH30N65C4D1.pdf?ci_sign=550355bb4be0761a37e2b9743713f9f41c109a4e Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 161ns
Pulsed collector current: 136A
Collector current: 30A
Produkt ist nicht verfügbar
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IXXH30N65B4 IXXH30N65B4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8DEB991221820&compId=IXXH30N65B4.pdf?ci_sign=bbf00177ee9f048f5be794de090191d96e7b8592 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Type of transistor: IGBT
Power dissipation: 230W
Gate charge: 52nC
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXXH30N65B4D1 IXXH30N65B4D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8E8CB7EEEB820&compId=IXXH30N65B4D1.pdf?ci_sign=c2ff94212e6ba280141b1eba1a8adcae86004281 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Pulsed collector current: 146A
Collector current: 30A
Produkt ist nicht verfügbar
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MDD200-22N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E12DCDB379DE28&compId=MDD200-22N1-DTE.pdf?ci_sign=2cca8bdbfad489fe0eda61f2b7a2d0ecd141324f pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Max. load current: 350A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD200-16N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E081E3E28A7E28&compId=MDD200-16N1-DTE.pdf?ci_sign=8dda3721dbf88572c903346fd69369515b29a002 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Max. load current: 350A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD200-18N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8373F35902A0C4&compId=MDD200-18N1.pdf?ci_sign=4e6c82549feffa3540f48d23c8a1f65b2fbd7448 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD200-14N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB836BB6A54FE0C4&compId=MDD200-14N1.pdf?ci_sign=9c65bcb969b3e3e3a5895718e104f59faa6fc667 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXBT2N250 IXBT2N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFD07043005820&compId=IXBH(T)2N250.pdf?ci_sign=adab234c75aabbb58f5d98046e17708bb23548a0 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Mounting: SMD
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 2A
Pulsed collector current: 13A
Turn-on time: 310ns
Turn-off time: 252ns
Type of transistor: IGBT
Power dissipation: 32W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 10.6nC
Technology: BiMOSFET™
Case: TO268
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IXXH80N65B4D1 IXXH80N65B4D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE7DFB6358BD820&compId=IXXH80N65B4D1.pdf?ci_sign=5b6961bb362942b072eeea4395a0b19d8d0c5341 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
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IXXH80N65B4H1 IXXH80N65B4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA3648FD9178BF&compId=IXXH80N65B4H1.pdf?ci_sign=a2c8e0ac4e56ecc4129b580ddf983a551d75c6ef Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 147ns
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IXTA28P065T IXTA28P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B82DC4A798BF&compId=IXT_28P065T.pdf?ci_sign=f1bef680ca9cf6e62c0af10fbe84210c2fa0873f Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
auf Bestellung 198 Stücke:
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19+3.82 EUR
33+2.19 EUR
35+2.07 EUR
Mindestbestellmenge: 19
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IXTN90N25L2 IXTN90N25L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8E2E048735820&compId=IXTN90N25L2.pdf?ci_sign=6a285a5bc74e4e1c8e1650aa50849cbbf7eb30a3 Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 90A; SOT227B; screw; Idm: 360A
Drain current: 90A
On-state resistance: 36mΩ
Power dissipation: 735W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 640nC
Technology: Linear L2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 360A
Type of semiconductor module: MOSFET transistor
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 266ns
Drain-source voltage: 250V
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IXFP90N20X3M IXFP90N20X3M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB86D09048D8BF&compId=IXFP90N20X3M.pdf?ci_sign=5c1a1f901f779a0080c26dc7c292a30e32ce49f4 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
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IXTA90N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixta90n20x3_datasheet.pdf?assetguid=0d436688-a336-4e6b-a404-a707c9c33210 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 220A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 124ns
Produkt ist nicht verfügbar
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IXFA12N50P IXFA12N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7AEFCAC3138BF&compId=IXF_12N50P.pdf?ci_sign=3dd36ef8468ec34dac25b7833e04dbc62f9852a3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.73 EUR
22+3.35 EUR
23+3.17 EUR
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IXTP12N50P IXTP12N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.86 EUR
21+3.46 EUR
26+2.76 EUR
28+2.62 EUR
250+2.57 EUR
Mindestbestellmenge: 19
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IXTA12N50P IXTA12N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
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IXTT02N450HV IXTT02N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1471820&compId=IXTA(T)02N450HV.pdf?ci_sign=035071321f59a72a8b4bd172f91c4d79fad9fbe1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO268HV; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 0.2A
Power dissipation: 113W
Case: TO268HV
On-state resistance: 625Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
3+28.29 EUR
30+27.2 EUR
Mindestbestellmenge: 3
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PLA190S PLA190S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7100C7&compId=PLA190.pdf?ci_sign=d3dd6a4abd26658046a751f3e84d8c6790306ec1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 0.5ms
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.12 EUR
18+4 EUR
19+3.78 EUR
50+3.76 EUR
250+3.63 EUR
Mindestbestellmenge: 14
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PLA194S PLA194S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC77E0C7&compId=PLA194.pdf?ci_sign=b5f6d1e3573649bc3630d60c21a8bc071319a1a7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 2ms
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.03 EUR
23+3.17 EUR
24+3 EUR
250+2.89 EUR
Mindestbestellmenge: 18
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LDA212STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACFA49FC501EC&compId=LDA212.pdf?ci_sign=e72cb57335934dbfa047478f021fb2d5b300c2bc
LDA212STR
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA213STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AD204370281EC&compId=LDA213.pdf?ci_sign=6bf1f535cde47fa270dceaf89ce0b7c1d34729da
LDA213STR
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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IXTP10P50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e
IXTP10P50P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 414ns
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.94 EUR
14+5.32 EUR
15+5.03 EUR
50+4.93 EUR
100+4.83 EUR
Mindestbestellmenge: 10
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IXTP10P15T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03840D407D8BF&compId=IXT_10P15T.pdf?ci_sign=aab868e73793fd93dd8185240cab19c3a6c680af
IXTP10P15T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.97 EUR
Mindestbestellmenge: 24
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IXTP102N15T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12E1820&compId=IXTA(H%2CP%2CQ)102N15T.pdf?ci_sign=a7dd4f01d2a4226a8b0a38e27af5b16600fca392
IXTP102N15T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 97ns
Features of semiconductor devices: thrench gate power mosfet
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MDMA450UB1600PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
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MDMA360UB1600PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
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MDMA210UB1600PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mechanical mounting: screw
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MDMA280UB1600PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXTA120N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA2CF46A37D820&compId=IXTA(P)120N04T2.pdf?ci_sign=9781234723d86244a767988de041b1dde0e2fcc1
IXTA120N04T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTH420N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494E9820&compId=IXTH420N04T2.pdf?ci_sign=9304d2c9a0f1384c4669abc672571b3f8ebff765
IXTH420N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTA220N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC709D95CCF820&compId=IXTA(P)220N04T2.pdf?ci_sign=1db27c209e7af5f3f0d648bd91c318079852def5
IXTA220N04T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTA220N04T2-7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC7E9820&compId=IXTA220N04T2-7.pdf?ci_sign=dfbe0e0fc65622b215cc5fc0881ade14b823b82d
IXTA220N04T2-7
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTN17N120L pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA81B9EFCD51820&compId=IXTN17N120L.pdf?ci_sign=67609d109998c6dd7eef97d1d408d6559bb9508b
IXTN17N120L
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 15A
Case: SOT227B
Electrical mounting: screw
On-state resistance: 0.9Ω
Pulsed drain current: 34A
Power dissipation: 540W
Technology: Linear™
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 1.83µs
Polarisation: unipolar
Gate charge: 155nC
Produkt ist nicht verfügbar
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IXFA36N60X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa36n60x3-datasheet?assetguid=9c561014-ffa0-419b-994f-22f5fa914d61
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Mounting: SMD
Reverse recovery time: 180ns
Drain-source voltage: 600V
Drain current: 36A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: TO263
Produkt ist nicht verfügbar
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IXFH36N60X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh36n60x3-datasheet?assetguid=38271253-e2cd-4f1f-b434-c9ed8035371e
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Mounting: THT
Reverse recovery time: 180ns
Drain-source voltage: 600V
Drain current: 36A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: TO247-3
Produkt ist nicht verfügbar
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IXFH48N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh48n60x3_datasheet.pdf.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Mounting: THT
Reverse recovery time: 163ns
Drain-source voltage: 600V
Drain current: 48A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Gate charge: 38nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 68A
Case: TO247-3
Produkt ist nicht verfügbar
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IXFH78N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh78n60x3_datasheet.pdf.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 78A; Idm: 120A; 780W
Mounting: THT
Reverse recovery time: 205ns
Drain-source voltage: 600V
Drain current: 78A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Kind of package: tube
Gate charge: 70nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: TO247-3
Produkt ist nicht verfügbar
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IXFH98N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh98n60x3_datasheet.pdf.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 98A; Idm: 160A; 960W
Mounting: THT
Reverse recovery time: 220ns
Drain-source voltage: 600V
Drain current: 98A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 90nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 160A
Case: TO247-3
Produkt ist nicht verfügbar
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IXFP36N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp36n60x3_datasheet.pdf.pdf
IXFP36N60X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Mounting: THT
Reverse recovery time: 180ns
Drain-source voltage: 600V
Drain current: 36A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: TO220AB
Produkt ist nicht verfügbar
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MID145-12A3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5
Case: Y4-M5
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 200A
Application: fans; for pump; motors; photovoltaics
Power dissipation: 700W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: NPT
Topology: boost chopper
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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VUO122-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88959542B90DE0C4&compId=VUO122-12NO7.pdf?ci_sign=496930c95e7335bb9c77cbb977a1448c9cbb1872
VUO122-12NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 125A; Ifsm: 1kA
Case: ECO-PAC 2
Max. forward impulse current: 1kA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Leads: wire Ø 1.5mm
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.13V
Load current: 125A
Produkt ist nicht verfügbar
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DSEC60-12A Littelfuse-Power-Semiconductors-DSEC60-12A-Datasheet?assetguid=209f6ea6-9eb4-4faf-a3e4-37cae54527a2
DSEC60-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30Ax2; tube; Ifsm: 200A; TO247-3; 165W
Case: TO247-3
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.74V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Max. forward impulse current: 200A
Produkt ist nicht verfügbar
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DSSK28-006BS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC3686BF0EA60C4&compId=DSSK28-006BS.pdf?ci_sign=8d6a2a9b8016799440366e8ba8e32fee545733ca
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15Ax2; tube; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.52V
Max. forward impulse current: 0.3kA
Kind of package: tube
Max. load current: 35A
Power dissipation: 90W
Produkt ist nicht verfügbar
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VUO80-18NO1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88804BA7A478C0C4&compId=VUO80-18NO1.pdf?ci_sign=230cb5428898efb51f6bd7b4c3578050ad14cd4d
VUO80-18NO1
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
Produkt ist nicht verfügbar
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VUO80-08NO1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888040ECC780A0C4&compId=VUO80-08NO1.pdf?ci_sign=e6d40f359ac5c2632936a852c26710ff913b947c
VUO80-08NO1
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
Produkt ist nicht verfügbar
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IXFP230N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD0BBC1F507820&compId=IXFA(P)230N075T2.pdf?ci_sign=a193bb6c937ab8a381de2b728ab686af5cf3de01
IXFP230N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
Produkt ist nicht verfügbar
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LOC112S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADF4EA9EF01EC&compId=LOC112P.pdf?ci_sign=8cbac573205132593f6f59bb6199ad1903ebb2fb
LOC112S
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Type of optocoupler: optocoupler
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.69 EUR
32+2.26 EUR
33+2.19 EUR
35+2.1 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IXTH90P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA05F2055B718BF&compId=IXT_90P10P.pdf?ci_sign=874a10be422ad2b256b9a661a7f0701651c5c108
IXTH90P10P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Drain-source voltage: -100V
Drain current: -90A
Gate charge: 0.12µC
Reverse recovery time: 144ns
On-state resistance: 25mΩ
Power dissipation: 462W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: TO247-3
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.06 EUR
8+9.09 EUR
120+8.75 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXTA60N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951
IXTA60N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO263
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
Produkt ist nicht verfügbar
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IXFK360N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBEC3CAC2D3820&compId=IXFK(X)360N10T.pdf?ci_sign=3e3c42ae502f5134306933943e750d4d7a30bb3e
IXFK360N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN32N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA83FC27C19F820&compId=IXFN32N120P.pdf?ci_sign=21e350967878f792e5cbabfa7c9da6eeff737a7c
IXFN32N120P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.31Ω
Gate charge: 360nC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
Semiconductor structure: single transistor
Pulsed drain current: 100A
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXFZ140N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC69D820&compId=IXFZ140N25T.pdf?ci_sign=952f429967276dca1a61b9a4cdcb8892aedde274
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 445W
Case: DE475
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGH16N170 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAB99F1D44C151BF&compId=IXGH16N170-DTE.pdf?ci_sign=03a18b66e5d35198e9e236f78cf7b52f7cc4d616
IXGH16N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXGH16N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38
IXGH16N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXFK420N10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA57BFF6D4A18BF&compId=IXFK420N10T_IXFX420N10T.pdf?ci_sign=f703b8f2c268b8e9ba07cd2c3e4e8ce0b331312c
IXFK420N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.75 EUR
5+17.73 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFH20N100P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECE728CC0A18BF&compId=IXF_20N100P.pdf?ci_sign=e2a539356f4e584bf4dad0014f01227b046bdbad
IXFH20N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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IXFN420N10T pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AC87B9628D208143&compId=IXFN420N10T.pdf?ci_sign=b6ca25fc8c12b8d526ebadade3bda0c6322075d3
IXFN420N10T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.3mΩ
Gate charge: 670nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 140ns
Electrical mounting: screw
Mechanical mounting: screw
Technology: GigaMOS™; HiPerFET™
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXFH320N10T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2856F4A8DDE7820&compId=IXFH(T)320N10T2.pdf?ci_sign=712ea63a2238f63f81d01689168cb986a264e110
IXFH320N10T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 98ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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MMIX1F420N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 334A
Pulsed drain current: 1kA
Power dissipation: 680W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 670nC
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
Produkt ist nicht verfügbar
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IXXH30N65C4D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8EFE36A0F9820&compId=IXXH30N65C4D1.pdf?ci_sign=550355bb4be0761a37e2b9743713f9f41c109a4e
IXXH30N65C4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 161ns
Pulsed collector current: 136A
Collector current: 30A
Produkt ist nicht verfügbar
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IXXH30N65B4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8DEB991221820&compId=IXXH30N65B4.pdf?ci_sign=bbf00177ee9f048f5be794de090191d96e7b8592
IXXH30N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Type of transistor: IGBT
Power dissipation: 230W
Gate charge: 52nC
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXXH30N65B4D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8E8CB7EEEB820&compId=IXXH30N65B4D1.pdf?ci_sign=c2ff94212e6ba280141b1eba1a8adcae86004281
IXXH30N65B4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Pulsed collector current: 146A
Collector current: 30A
Produkt ist nicht verfügbar
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MDD200-22N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E12DCDB379DE28&compId=MDD200-22N1-DTE.pdf?ci_sign=2cca8bdbfad489fe0eda61f2b7a2d0ecd141324f pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Max. load current: 350A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD200-16N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E081E3E28A7E28&compId=MDD200-16N1-DTE.pdf?ci_sign=8dda3721dbf88572c903346fd69369515b29a002 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Max. load current: 350A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD200-18N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8373F35902A0C4&compId=MDD200-18N1.pdf?ci_sign=4e6c82549feffa3540f48d23c8a1f65b2fbd7448 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD200-14N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB836BB6A54FE0C4&compId=MDD200-14N1.pdf?ci_sign=9c65bcb969b3e3e3a5895718e104f59faa6fc667 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXBT2N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFD07043005820&compId=IXBH(T)2N250.pdf?ci_sign=adab234c75aabbb58f5d98046e17708bb23548a0
IXBT2N250
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Mounting: SMD
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 2A
Pulsed collector current: 13A
Turn-on time: 310ns
Turn-off time: 252ns
Type of transistor: IGBT
Power dissipation: 32W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 10.6nC
Technology: BiMOSFET™
Case: TO268
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXXH80N65B4D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE7DFB6358BD820&compId=IXXH80N65B4D1.pdf?ci_sign=5b6961bb362942b072eeea4395a0b19d8d0c5341
IXXH80N65B4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
Produkt ist nicht verfügbar
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IXXH80N65B4H1 pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA3648FD9178BF&compId=IXXH80N65B4H1.pdf?ci_sign=a2c8e0ac4e56ecc4129b580ddf983a551d75c6ef
IXXH80N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 147ns
Produkt ist nicht verfügbar
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IXTA28P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B82DC4A798BF&compId=IXT_28P065T.pdf?ci_sign=f1bef680ca9cf6e62c0af10fbe84210c2fa0873f
IXTA28P065T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.82 EUR
33+2.19 EUR
35+2.07 EUR
Mindestbestellmenge: 19
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IXTN90N25L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8E2E048735820&compId=IXTN90N25L2.pdf?ci_sign=6a285a5bc74e4e1c8e1650aa50849cbbf7eb30a3
IXTN90N25L2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 90A; SOT227B; screw; Idm: 360A
Drain current: 90A
On-state resistance: 36mΩ
Power dissipation: 735W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 640nC
Technology: Linear L2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 360A
Type of semiconductor module: MOSFET transistor
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 266ns
Drain-source voltage: 250V
Produkt ist nicht verfügbar
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IXFP90N20X3M pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB86D09048D8BF&compId=IXFP90N20X3M.pdf?ci_sign=5c1a1f901f779a0080c26dc7c292a30e32ce49f4 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFP90N20X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Produkt ist nicht verfügbar
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IXTA90N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixta90n20x3_datasheet.pdf?assetguid=0d436688-a336-4e6b-a404-a707c9c33210
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 220A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 124ns
Produkt ist nicht verfügbar
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IXFA12N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7AEFCAC3138BF&compId=IXF_12N50P.pdf?ci_sign=3dd36ef8468ec34dac25b7833e04dbc62f9852a3
IXFA12N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.73 EUR
22+3.35 EUR
23+3.17 EUR
Mindestbestellmenge: 20
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IXTP12N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8
IXTP12N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.86 EUR
21+3.46 EUR
26+2.76 EUR
28+2.62 EUR
250+2.57 EUR
Mindestbestellmenge: 19
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IXTA12N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8
IXTA12N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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IXTT02N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1471820&compId=IXTA(T)02N450HV.pdf?ci_sign=035071321f59a72a8b4bd172f91c4d79fad9fbe1
IXTT02N450HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO268HV; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 0.2A
Power dissipation: 113W
Case: TO268HV
On-state resistance: 625Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+28.29 EUR
30+27.2 EUR
Mindestbestellmenge: 3
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PLA190S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7100C7&compId=PLA190.pdf?ci_sign=d3dd6a4abd26658046a751f3e84d8c6790306ec1
PLA190S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 0.5ms
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.12 EUR
18+4 EUR
19+3.78 EUR
50+3.76 EUR
250+3.63 EUR
Mindestbestellmenge: 14
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PLA194S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC77E0C7&compId=PLA194.pdf?ci_sign=b5f6d1e3573649bc3630d60c21a8bc071319a1a7
PLA194S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 2ms
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.03 EUR
23+3.17 EUR
24+3 EUR
250+2.89 EUR
Mindestbestellmenge: 18
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