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IXFR44N80P IXFR44N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC577820&compId=IXFR44N80P.pdf?ci_sign=51db11391181a2835bbd75c1ae0c474b83eb49a1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DSEI8-06AS-TUB DSEI8-06AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4DA1E4FAF60C4&compId=DSEI8-06A_DSEI8-06AS.pdf?ci_sign=bfe55369decdc2777973e475f80101adee4fb738 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; TO263AB; Ufmax: 1.3V; 50W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: tube
Power dissipation: 50W
Features of semiconductor devices: fast switching
Technology: FRED
Reverse recovery time: 35ns
auf Bestellung 30 Stücke:
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25+2.92 EUR
30+2.39 EUR
Mindestbestellmenge: 25
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IXDN614PI IXDN614PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Case: DIP8
Mounting: THT
Kind of package: tube
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Operating temperature: -40...125°C
Output current: -14...14A
Turn-off time: 130ns
Turn-on time: 140ns
Number of channels: 1
Supply voltage: 4.5...35V
auf Bestellung 83 Stücke:
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18+4.08 EUR
36+2 EUR
38+1.89 EUR
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CPC1966YX6 CPC1966YX6 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82200C7&compId=CPC1966YX6.pdf?ci_sign=3627c14bdb96a92aa76e317f8bb40155f042cd56 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: instantaneous switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-on time: 500µs
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.62 EUR
11+6.66 EUR
12+6.31 EUR
25+6.28 EUR
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CPC1981Y CPC1981Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B4C0C7&compId=CPC1981.pdf?ci_sign=49fda13fe6a6bae85cf657bec9b4905da8f5b07d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 10ms
Max. operating current: 180mA
Turn-off time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 18Ω
Switched voltage: max. 1kV AC
Relay variant: 1-phase
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 14 Stücke:
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13+5.95 EUR
14+5.11 EUR
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IXTA140N12T2 IXTA140N12T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDE4D4C598B820&compId=IXTA(P)140N12T2.pdf?ci_sign=96847b55de5591e2d4cc16630b5a64962539e9ba Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Gate charge: 174nC
Reverse recovery time: 65ns
On-state resistance: 10mΩ
Power dissipation: 577W
Case: TO263
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.94 EUR
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DSEI2X101-06A DSEI2X101-06A IXYS pVersion=0046&contRep=ZT&docId=E1C04A8FCC4F92F1A6F5005056AB5A8F&compId=DSEI2x101-06A.pdf?ci_sign=09b084b06228819067d2329633b0aef8070e24cb Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 96A x2
Case: SOT227B
Max. forward voltage: 1.25V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 4 Stücke:
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2+35.99 EUR
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DSEI12-06A DSEI12-06A IXYS pVersion=0046&contRep=ZT&docId=E269244771F7DAF1A303005056AB0C4F&compId=DSEI12-06A.pdf?ci_sign=1a0272622fb5d81809dede3e61b8d2bfcae11f38 description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 14A; tube; Ifsm: 100A; TO220AC; 62W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 14A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.5V
Max. forward impulse current: 100A
Power dissipation: 62W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 857 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.93 EUR
36+2 EUR
38+1.89 EUR
50+1.87 EUR
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DSA15IM200UC DSA15IM200UC IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C8FD8A880F38BF&compId=DSA15IM200UC.pdf?ci_sign=056317a4f5de6751e61974d806a68417d45989a7 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
auf Bestellung 1744 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.03 EUR
47+1.54 EUR
59+1.23 EUR
62+1.16 EUR
500+1.14 EUR
Mindestbestellmenge: 36
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DPG20C300PN DPG20C300PN IXYS Littelfuse-Power-Semiconductors-DPG20C300PN-Datasheet?assetguid=81A91808-9E32-4874-B0CD-3B7F01F1EA7E Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220FP
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Power dissipation: 35W
Max. forward voltage: 1.27V
Max. forward impulse current: 140A
Load current: 10A x2
Max. off-state voltage: 300V
auf Bestellung 557 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.23 EUR
36+2.02 EUR
41+1.77 EUR
45+1.6 EUR
48+1.52 EUR
250+1.49 EUR
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DPG20C300PB DPG20C300PB IXYS DPG20C300PB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 65W
Max. forward voltage: 1.27V
Max. forward impulse current: 140A
Load current: 10A x2
Max. off-state voltage: 300V
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.76 EUR
29+2.53 EUR
36+2 EUR
38+1.9 EUR
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IXDN602PI IXDN602PI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
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IXDN602SIA IXDN602SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Number of channels: 2
Output current: -2...2A
Supply voltage: 4.5...35V
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 93ns
Turn-off time: 93ns
Kind of package: tube
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
auf Bestellung 614 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.62 EUR
65+1.12 EUR
70+1.03 EUR
74+0.97 EUR
100+0.96 EUR
300+0.94 EUR
Mindestbestellmenge: 45
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CPC1965G CPC1965G IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A44BA23226F8BF&compId=CPC1965G.pdf?ci_sign=3a2396cdfa67a4109f17be1dd9e9ffa31f3979f0 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x7.62x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP4
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.36 EUR
18+4.05 EUR
19+3.82 EUR
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MEK300-06DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A5A417959964C0E2&compId=MEx300-06DA.pdf?ci_sign=0556e9583efd8b38c39b9e2bb9f3f3b9775ec323 Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Electrical mounting: screw
Type of semiconductor module: diode
Case: Y4-M6
Mechanical mounting: screw
Max. forward voltage: 1.19V
Load current: 304A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 2.4kA
Semiconductor structure: common cathode
auf Bestellung 18 Stücke:
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1+87 EUR
6+85.59 EUR
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CPC2330N CPC2330N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891AC0C7&compId=CPC2330N.pdf?ci_sign=029ea682cdcd4f7973c59961ae0fa6d8e53884ee Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Case: SO8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
auf Bestellung 484 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.59 EUR
32+2.25 EUR
34+2.13 EUR
Mindestbestellmenge: 20
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IXTP450P2 IXTP450P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55001B8D0D820&compId=IXTH(P%2CQ)450P2.pdf?ci_sign=bd2a070be623e6483ee1ebfc57c7e655c7dd0ea6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Reverse recovery time: 400ns
Power dissipation: 300W
On-state resistance: 0.33Ω
Drain current: 16A
Drain-source voltage: 500V
Polarisation: unipolar
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.86 EUR
23+3.19 EUR
24+3.02 EUR
100+2.9 EUR
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MCD162-18io1 MCD162-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01F68DDF93E27&compId=MCD162-18IO1-DTE.pdf?ci_sign=455e3bcba99267b8d353287e50d54a847388ebe6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. forward voltage: 1.03V
Load current: 181A
Max. load current: 300A
Max. forward impulse current: 6kA
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
auf Bestellung 3 Stücke:
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1+79.26 EUR
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PD2401 PD2401 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98480C7&compId=PD2401.pdf?ci_sign=a60ef1f1aa10789c66a0d571757966686af45183 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Mounting: THT
Case: DIP4
Switching method: zero voltage switching
Type of relay: solid state
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 500V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.22 EUR
11+6.52 EUR
12+6.16 EUR
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IXTP50N20P IXTP50N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.89 EUR
22+3.4 EUR
23+3.22 EUR
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IXTQ50N20P IXTQ50N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.29 EUR
19+3.95 EUR
20+3.73 EUR
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IXTP50N25T IXTP50N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4E4FF92DFD820&compId=IXTA(H%2CP%2CQ)50N25T.pdf?ci_sign=7e809dd509feff8e274b784c3f608f03c09bb7c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 309 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.25 EUR
17+4.29 EUR
18+4.06 EUR
Mindestbestellmenge: 12
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IXTP50N20PM IXTP50N20PM IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF907F47B5969E27&compId=IXTP50N20PM-DTE.pdf?ci_sign=3960f7e3d34464ae58cc23f154da7e0b579f8434 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTX110N20L2 IXTX110N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9939600E0EFF298BF&compId=IXT_110N20L2.pdf?ci_sign=2efcd7c71b9a3d0ca4fa8423b4cac407d61b052b Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Technology: Linear L2™
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
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IXDD604D2TR IXDD604D2TR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 37 Stücke:
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35+2.1 EUR
37+1.93 EUR
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IXDI604SIA IXDI604SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 1060 Stücke:
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32+2.26 EUR
44+1.64 EUR
48+1.5 EUR
49+1.49 EUR
51+1.42 EUR
100+1.37 EUR
200+1.36 EUR
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IXFH12N120P IXFH12N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC077820&compId=IXFH12N120P.pdf?ci_sign=03e4ff54b9f94353d29ae1889cf223edf7d7b9d6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 543W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Power dissipation: 543W
Case: TO247-3
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 265 Stücke:
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4+19.68 EUR
5+14.97 EUR
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DSEP2X101-04A DSEP2X101-04A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA953BFBDF922143&compId=DSEP2X101-04A.pdf?ci_sign=594b348ef84af72be8b50caeb80a2a4f9bfe9466 Category: Diode modules
Description: Module: diode; double independent; 400V; If: 100Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Load current: 100A x2
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. forward voltage: 1.73V
Case: SOT227B
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double independent
auf Bestellung 36 Stücke:
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2+46.89 EUR
10+46.68 EUR
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CPC1114NTR CPC1114NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75FE0C7&compId=CPC1114N.pdf?ci_sign=36ecf46fb10f7b97fccf3227e429fc88dfec2307 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXTH16N50D2 IXTH16N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
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IXKH47N60C IXKH47N60C IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC739820&compId=IXKH47N60C.pdf?ci_sign=43bb435c43c10b1bc34c0027e601cdcadb46f0c7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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DSA120X200LB-TRR IXYS Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. forward voltage: 0.67V
Load current: 65A x2
Power dissipation: 185W
Max. off-state voltage: 200V
Max. forward impulse current: 700A
Semiconductor structure: double independent
Produkt ist nicht verfügbar
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DSEE30-12A DSEE30-12A IXYS DSEE30-12A.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Reverse recovery time: 30ns
Max. forward voltage: 2.5V
Load current: 30A
Power dissipation: 165W
auf Bestellung 12 Stücke:
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4+20.02 EUR
10+19.25 EUR
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IXXH80N65B4 IXXH80N65B4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9E035A3E93820&compId=IXXH80N65B4.pdf?ci_sign=87dde9e4c61408c192916628afc8e7dc723e51a1 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Turn-on time: 125ns
Gate charge: 0.12µC
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
Power dissipation: 625W
Collector-emitter voltage: 650V
auf Bestellung 281 Stücke:
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8+10.18 EUR
12+6.03 EUR
120+5.96 EUR
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IXFH110N10P IXFH110N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC01F820&compId=IXFH110N10P.pdf?ci_sign=2692b409156b87ba36b15cc212f6c4d34cf32b38 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
auf Bestellung 204 Stücke:
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8+9.37 EUR
12+6.18 EUR
13+5.83 EUR
120+5.72 EUR
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CPC1726Y CPC1726Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931BC75C80C7&compId=CPC1726.pdf?ci_sign=a53eb8bf498480b7b73e068027bb14401528e7ca Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; OptoMOS; 0.75Ω
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V DC
Relay variant: current source
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 0.75Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
auf Bestellung 80 Stücke:
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17+4.43 EUR
20+3.6 EUR
22+3.4 EUR
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CLA100E1200KB CLA100E1200KB IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3BE18465FA0D2&compId=CLA100E1200KB.pdf?ci_sign=8a6a9c1a38dc741ed9180f9f3b065cc6992c0b39 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 160A
Load current: 100A
Gate current: 80mA
Case: TO264
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.19kA
auf Bestellung 44 Stücke:
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7+10.24 EUR
9+8.38 EUR
10+7.92 EUR
25+7.74 EUR
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IXFK150N30P3 IXFK150N30P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D336DC7D7F5820&compId=IXFK(X)150N30P3.pdf?ci_sign=e1cc3cf21ad8db90ded334fd7d3c224869e18e9c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Polarisation: unipolar
Gate charge: 197nC
On-state resistance: 19mΩ
Drain current: 150A
Drain-source voltage: 300V
Mounting: THT
Power dissipation: 1.3kW
Kind of package: tube
Case: TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 100 Stücke:
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4+20.35 EUR
25+19.69 EUR
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IXTK180N15P IXTK180N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9188AFD9C59E27&compId=IXTK180N15P-DTE.pdf?ci_sign=2ad7003b8dcc314cadea14ef7581e19529865817 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: Polar™
Reverse recovery time: 150ns
auf Bestellung 144 Stücke:
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4+18.49 EUR
5+14.73 EUR
6+13.93 EUR
25+13.38 EUR
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IXTP120P065T IXTP120P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Technology: TrenchP™
auf Bestellung 262 Stücke:
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10+7.92 EUR
15+5 EUR
16+4.73 EUR
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MCMA140PD1600TB MCMA140PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B7921B0CE0C4&compId=MCMA140PD1600TB.pdf?ci_sign=c6eeb5142d57bdd4750d35a87b20279a22ab7570 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.28V
Load current: 140A
Max. load current: 220A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
auf Bestellung 17 Stücke:
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2+42.91 EUR
6+41.27 EUR
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IXTP10P50P IXTP10P50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 414ns
auf Bestellung 182 Stücke:
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10+7.66 EUR
14+5.32 EUR
15+5.03 EUR
50+4.83 EUR
Mindestbestellmenge: 10
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IXTH90P10P IXTH90P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA05F2055B718BF&compId=IXT_90P10P.pdf?ci_sign=874a10be422ad2b256b9a661a7f0701651c5c108 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Case: TO247-3
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -100V
Drain current: -90A
Gate charge: 0.12µC
Reverse recovery time: 144ns
On-state resistance: 25mΩ
Power dissipation: 462W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 150 Stücke:
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6+14.14 EUR
8+9.09 EUR
30+8.75 EUR
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IXXH80N65B4D1 IXXH80N65B4D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE7DFB6358BD820&compId=IXXH80N65B4D1.pdf?ci_sign=5b6961bb362942b072eeea4395a0b19d8d0c5341 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Turn-off time: 222ns
Turn-on time: 125ns
Collector current: 80A
Pulsed collector current: 430A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IXXH80N65B4H1 IXXH80N65B4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA3648FD9178BF&compId=IXXH80N65B4H1.pdf?ci_sign=a2c8e0ac4e56ecc4129b580ddf983a551d75c6ef Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Turn-off time: 147ns
Turn-on time: 123ns
Collector current: 80A
Pulsed collector current: 430A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IXFA12N50P IXFA12N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7AEFCAC3138BF&compId=IXF_12N50P.pdf?ci_sign=3dd36ef8468ec34dac25b7833e04dbc62f9852a3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
auf Bestellung 166 Stücke:
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20+3.73 EUR
22+3.36 EUR
23+3.17 EUR
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IXTP12N50P IXTP12N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: Polar™
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.86 EUR
21+3.46 EUR
26+2.76 EUR
28+2.62 EUR
250+2.57 EUR
Mindestbestellmenge: 19
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IXTA12N50P IXTA12N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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IXTP8N65X2 IXTP8N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA53B40A6BF8BF&compId=IXT_8N65X2.pdf?ci_sign=d8fe73a78fa1d8d397b55fa5baf0e28457656378 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
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IXFP16N50P IXFP16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 286 Stücke:
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11+6.64 EUR
20+3.58 EUR
22+3.39 EUR
100+3.26 EUR
Mindestbestellmenge: 11
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IXTP16N50P IXTP16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.52 EUR
21+3.42 EUR
23+3.23 EUR
50+3.13 EUR
100+3.1 EUR
Mindestbestellmenge: 13
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IXFA16N50P3 IXFA16N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.45 EUR
24+3.1 EUR
30+2.4 EUR
31+2.3 EUR
Mindestbestellmenge: 21
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IXTT16N50D2 IXTT16N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
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IXTQ16N50P IXTQ16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
Produkt ist nicht verfügbar
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IXFH16N50P IXFH16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA16N50P IXFA16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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IXFH16N50P3 IXFH16N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA16N50P IXTA16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH60N20L2 IXTH60N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 330ns
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH26N60P IXTH26N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D522F688F8B820&compId=IXTH(Q%2CT%2CV)26N60P_S.pdf?ci_sign=00e2f7b4fe95c5c6f2d8b57fcefc771d8841088e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXFR44N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC577820&compId=IXFR44N80P.pdf?ci_sign=51db11391181a2835bbd75c1ae0c474b83eb49a1
IXFR44N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DSEI8-06AS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4DA1E4FAF60C4&compId=DSEI8-06A_DSEI8-06AS.pdf?ci_sign=bfe55369decdc2777973e475f80101adee4fb738
DSEI8-06AS-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; TO263AB; Ufmax: 1.3V; 50W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: tube
Power dissipation: 50W
Features of semiconductor devices: fast switching
Technology: FRED
Reverse recovery time: 35ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.92 EUR
30+2.39 EUR
Mindestbestellmenge: 25
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IXDN614PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDN614PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Case: DIP8
Mounting: THT
Kind of package: tube
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Operating temperature: -40...125°C
Output current: -14...14A
Turn-off time: 130ns
Turn-on time: 140ns
Number of channels: 1
Supply voltage: 4.5...35V
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.08 EUR
36+2 EUR
38+1.89 EUR
Mindestbestellmenge: 18
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CPC1966YX6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82200C7&compId=CPC1966YX6.pdf?ci_sign=3627c14bdb96a92aa76e317f8bb40155f042cd56
CPC1966YX6
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: instantaneous switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-on time: 500µs
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.62 EUR
11+6.66 EUR
12+6.31 EUR
25+6.28 EUR
Mindestbestellmenge: 10
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CPC1981Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B4C0C7&compId=CPC1981.pdf?ci_sign=49fda13fe6a6bae85cf657bec9b4905da8f5b07d
CPC1981Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 10ms
Max. operating current: 180mA
Turn-off time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 18Ω
Switched voltage: max. 1kV AC
Relay variant: 1-phase
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.95 EUR
14+5.11 EUR
Mindestbestellmenge: 13
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IXTA140N12T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDE4D4C598B820&compId=IXTA(P)140N12T2.pdf?ci_sign=96847b55de5591e2d4cc16630b5a64962539e9ba
IXTA140N12T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Gate charge: 174nC
Reverse recovery time: 65ns
On-state resistance: 10mΩ
Power dissipation: 577W
Case: TO263
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
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DSEI2X101-06A pVersion=0046&contRep=ZT&docId=E1C04A8FCC4F92F1A6F5005056AB5A8F&compId=DSEI2x101-06A.pdf?ci_sign=09b084b06228819067d2329633b0aef8070e24cb
DSEI2X101-06A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 96A x2
Case: SOT227B
Max. forward voltage: 1.25V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.99 EUR
Mindestbestellmenge: 2
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DSEI12-06A description pVersion=0046&contRep=ZT&docId=E269244771F7DAF1A303005056AB0C4F&compId=DSEI12-06A.pdf?ci_sign=1a0272622fb5d81809dede3e61b8d2bfcae11f38
DSEI12-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 14A; tube; Ifsm: 100A; TO220AC; 62W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 14A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.5V
Max. forward impulse current: 100A
Power dissipation: 62W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 857 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.93 EUR
36+2 EUR
38+1.89 EUR
50+1.87 EUR
Mindestbestellmenge: 25
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DSA15IM200UC pVersion=0046&contRep=ZT&docId=005056AB82531EE991C8FD8A880F38BF&compId=DSA15IM200UC.pdf?ci_sign=056317a4f5de6751e61974d806a68417d45989a7
DSA15IM200UC
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
auf Bestellung 1744 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
47+1.54 EUR
59+1.23 EUR
62+1.16 EUR
500+1.14 EUR
Mindestbestellmenge: 36
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DPG20C300PN Littelfuse-Power-Semiconductors-DPG20C300PN-Datasheet?assetguid=81A91808-9E32-4874-B0CD-3B7F01F1EA7E
DPG20C300PN
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220FP
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Power dissipation: 35W
Max. forward voltage: 1.27V
Max. forward impulse current: 140A
Load current: 10A x2
Max. off-state voltage: 300V
auf Bestellung 557 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.23 EUR
36+2.02 EUR
41+1.77 EUR
45+1.6 EUR
48+1.52 EUR
250+1.49 EUR
Mindestbestellmenge: 33
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DPG20C300PB DPG20C300PB.pdf
DPG20C300PB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 65W
Max. forward voltage: 1.27V
Max. forward impulse current: 140A
Load current: 10A x2
Max. off-state voltage: 300V
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.76 EUR
29+2.53 EUR
36+2 EUR
38+1.9 EUR
Mindestbestellmenge: 26
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IXDN602PI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDN602PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
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IXDN602SIA pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDN602SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Number of channels: 2
Output current: -2...2A
Supply voltage: 4.5...35V
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 93ns
Turn-off time: 93ns
Kind of package: tube
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
auf Bestellung 614 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
65+1.12 EUR
70+1.03 EUR
74+0.97 EUR
100+0.96 EUR
300+0.94 EUR
Mindestbestellmenge: 45
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CPC1965G pVersion=0046&contRep=ZT&docId=005056AB82531EE995A44BA23226F8BF&compId=CPC1965G.pdf?ci_sign=3a2396cdfa67a4109f17be1dd9e9ffa31f3979f0
CPC1965G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x7.62x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP4
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.36 EUR
18+4.05 EUR
19+3.82 EUR
Mindestbestellmenge: 14
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MEK300-06DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A5A417959964C0E2&compId=MEx300-06DA.pdf?ci_sign=0556e9583efd8b38c39b9e2bb9f3f3b9775ec323
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Electrical mounting: screw
Type of semiconductor module: diode
Case: Y4-M6
Mechanical mounting: screw
Max. forward voltage: 1.19V
Load current: 304A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 2.4kA
Semiconductor structure: common cathode
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+87 EUR
6+85.59 EUR
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CPC2330N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891AC0C7&compId=CPC2330N.pdf?ci_sign=029ea682cdcd4f7973c59961ae0fa6d8e53884ee
CPC2330N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Case: SO8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
auf Bestellung 484 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.59 EUR
32+2.25 EUR
34+2.13 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXTP450P2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55001B8D0D820&compId=IXTH(P%2CQ)450P2.pdf?ci_sign=bd2a070be623e6483ee1ebfc57c7e655c7dd0ea6
IXTP450P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Reverse recovery time: 400ns
Power dissipation: 300W
On-state resistance: 0.33Ω
Drain current: 16A
Drain-source voltage: 500V
Polarisation: unipolar
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.86 EUR
23+3.19 EUR
24+3.02 EUR
100+2.9 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
MCD162-18io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01F68DDF93E27&compId=MCD162-18IO1-DTE.pdf?ci_sign=455e3bcba99267b8d353287e50d54a847388ebe6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCD162-18io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. forward voltage: 1.03V
Load current: 181A
Max. load current: 300A
Max. forward impulse current: 6kA
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+79.26 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PD2401 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98480C7&compId=PD2401.pdf?ci_sign=a60ef1f1aa10789c66a0d571757966686af45183
PD2401
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Mounting: THT
Case: DIP4
Switching method: zero voltage switching
Type of relay: solid state
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 500V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.22 EUR
11+6.52 EUR
12+6.16 EUR
Mindestbestellmenge: 10
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IXTP50N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34
IXTP50N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.89 EUR
22+3.4 EUR
23+3.22 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ50N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34
IXTQ50N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.29 EUR
19+3.95 EUR
20+3.73 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IXTP50N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4E4FF92DFD820&compId=IXTA(H%2CP%2CQ)50N25T.pdf?ci_sign=7e809dd509feff8e274b784c3f608f03c09bb7c0
IXTP50N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 309 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.25 EUR
17+4.29 EUR
18+4.06 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IXTP50N20PM pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF907F47B5969E27&compId=IXTP50N20PM-DTE.pdf?ci_sign=3960f7e3d34464ae58cc23f154da7e0b579f8434
IXTP50N20PM
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTX110N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE9939600E0EFF298BF&compId=IXT_110N20L2.pdf?ci_sign=2efcd7c71b9a3d0ca4fa8423b4cac407d61b052b
IXTX110N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Technology: Linear L2™
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDD604D2TR pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDD604D2TR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.1 EUR
37+1.93 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IXDI604SIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDI604SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 1060 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.26 EUR
44+1.64 EUR
48+1.5 EUR
49+1.49 EUR
51+1.42 EUR
100+1.37 EUR
200+1.36 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IXFH12N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC077820&compId=IXFH12N120P.pdf?ci_sign=03e4ff54b9f94353d29ae1889cf223edf7d7b9d6
IXFH12N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 543W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Power dissipation: 543W
Case: TO247-3
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.68 EUR
5+14.97 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DSEP2X101-04A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA953BFBDF922143&compId=DSEP2X101-04A.pdf?ci_sign=594b348ef84af72be8b50caeb80a2a4f9bfe9466
DSEP2X101-04A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 100Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Load current: 100A x2
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. forward voltage: 1.73V
Case: SOT227B
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double independent
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+46.89 EUR
10+46.68 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CPC1114NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75FE0C7&compId=CPC1114N.pdf?ci_sign=36ecf46fb10f7b97fccf3227e429fc88dfec2307
CPC1114NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH16N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005
IXTH16N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXKH47N60C pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC739820&compId=IXKH47N60C.pdf?ci_sign=43bb435c43c10b1bc34c0027e601cdcadb46f0c7
IXKH47N60C
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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DSA120X200LB-TRR
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. forward voltage: 0.67V
Load current: 65A x2
Power dissipation: 185W
Max. off-state voltage: 200V
Max. forward impulse current: 700A
Semiconductor structure: double independent
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSEE30-12A DSEE30-12A.PDF
DSEE30-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Reverse recovery time: 30ns
Max. forward voltage: 2.5V
Load current: 30A
Power dissipation: 165W
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.02 EUR
10+19.25 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXXH80N65B4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9E035A3E93820&compId=IXXH80N65B4.pdf?ci_sign=87dde9e4c61408c192916628afc8e7dc723e51a1
IXXH80N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Turn-on time: 125ns
Gate charge: 0.12µC
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
Power dissipation: 625W
Collector-emitter voltage: 650V
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.18 EUR
12+6.03 EUR
120+5.96 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXFH110N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC01F820&compId=IXFH110N10P.pdf?ci_sign=2692b409156b87ba36b15cc212f6c4d34cf32b38
IXFH110N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.37 EUR
12+6.18 EUR
13+5.83 EUR
120+5.72 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
CPC1726Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931BC75C80C7&compId=CPC1726.pdf?ci_sign=a53eb8bf498480b7b73e068027bb14401528e7ca
CPC1726Y
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; OptoMOS; 0.75Ω
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V DC
Relay variant: current source
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 0.75Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.43 EUR
20+3.6 EUR
22+3.4 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
CLA100E1200KB pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3BE18465FA0D2&compId=CLA100E1200KB.pdf?ci_sign=8a6a9c1a38dc741ed9180f9f3b065cc6992c0b39
CLA100E1200KB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 160A
Load current: 100A
Gate current: 80mA
Case: TO264
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.19kA
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.24 EUR
9+8.38 EUR
10+7.92 EUR
25+7.74 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFK150N30P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D336DC7D7F5820&compId=IXFK(X)150N30P3.pdf?ci_sign=e1cc3cf21ad8db90ded334fd7d3c224869e18e9c
IXFK150N30P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Polarisation: unipolar
Gate charge: 197nC
On-state resistance: 19mΩ
Drain current: 150A
Drain-source voltage: 300V
Mounting: THT
Power dissipation: 1.3kW
Kind of package: tube
Case: TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.35 EUR
25+19.69 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXTK180N15P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9188AFD9C59E27&compId=IXTK180N15P-DTE.pdf?ci_sign=2ad7003b8dcc314cadea14ef7581e19529865817
IXTK180N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: Polar™
Reverse recovery time: 150ns
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.49 EUR
5+14.73 EUR
6+13.93 EUR
25+13.38 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXTP120P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7
IXTP120P065T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Technology: TrenchP™
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.92 EUR
15+5 EUR
16+4.73 EUR
Mindestbestellmenge: 10
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MCMA140PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B7921B0CE0C4&compId=MCMA140PD1600TB.pdf?ci_sign=c6eeb5142d57bdd4750d35a87b20279a22ab7570 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCMA140PD1600TB
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.28V
Load current: 140A
Max. load current: 220A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.91 EUR
6+41.27 EUR
Mindestbestellmenge: 2
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IXTP10P50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e
IXTP10P50P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 414ns
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.66 EUR
14+5.32 EUR
15+5.03 EUR
50+4.83 EUR
Mindestbestellmenge: 10
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IXTH90P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA05F2055B718BF&compId=IXT_90P10P.pdf?ci_sign=874a10be422ad2b256b9a661a7f0701651c5c108
IXTH90P10P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Case: TO247-3
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -100V
Drain current: -90A
Gate charge: 0.12µC
Reverse recovery time: 144ns
On-state resistance: 25mΩ
Power dissipation: 462W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.14 EUR
8+9.09 EUR
30+8.75 EUR
Mindestbestellmenge: 6
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IXXH80N65B4D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE7DFB6358BD820&compId=IXXH80N65B4D1.pdf?ci_sign=5b6961bb362942b072eeea4395a0b19d8d0c5341
IXXH80N65B4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Turn-off time: 222ns
Turn-on time: 125ns
Collector current: 80A
Pulsed collector current: 430A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IXXH80N65B4H1 pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA3648FD9178BF&compId=IXXH80N65B4H1.pdf?ci_sign=a2c8e0ac4e56ecc4129b580ddf983a551d75c6ef
IXXH80N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Turn-off time: 147ns
Turn-on time: 123ns
Collector current: 80A
Pulsed collector current: 430A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IXFA12N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7AEFCAC3138BF&compId=IXF_12N50P.pdf?ci_sign=3dd36ef8468ec34dac25b7833e04dbc62f9852a3
IXFA12N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.73 EUR
22+3.36 EUR
23+3.17 EUR
Mindestbestellmenge: 20
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IXTP12N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8
IXTP12N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: Polar™
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.86 EUR
21+3.46 EUR
26+2.76 EUR
28+2.62 EUR
250+2.57 EUR
Mindestbestellmenge: 19
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IXTA12N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8
IXTA12N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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IXTP8N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA53B40A6BF8BF&compId=IXT_8N65X2.pdf?ci_sign=d8fe73a78fa1d8d397b55fa5baf0e28457656378
IXTP8N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
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IXFP16N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7
IXFP16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.64 EUR
20+3.58 EUR
22+3.39 EUR
100+3.26 EUR
Mindestbestellmenge: 11
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IXTP16N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1
IXTP16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.52 EUR
21+3.42 EUR
23+3.23 EUR
50+3.13 EUR
100+3.1 EUR
Mindestbestellmenge: 13
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IXFA16N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da
IXFA16N50P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.45 EUR
24+3.1 EUR
30+2.4 EUR
31+2.3 EUR
Mindestbestellmenge: 21
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IXTT16N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005
IXTT16N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
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IXTQ16N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1
IXTQ16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
Produkt ist nicht verfügbar
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IXFH16N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7
IXFH16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA16N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7
IXFA16N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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IXFH16N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da
IXFH16N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA16N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1
IXTA16N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTH60N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442
IXTH60N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 330ns
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXTH26N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D522F688F8B820&compId=IXTH(Q%2CT%2CV)26N60P_S.pdf?ci_sign=00e2f7b4fe95c5c6f2d8b57fcefc771d8841088e
IXTH26N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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