Foto | Bezeichnung | Hersteller | Beschreibung |
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IXGH2N250 | IXYS |
![]() Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 2A Pulsed collector current: 13.5A Turn-on time: 115ns Turn-off time: 278ns Type of transistor: IGBT Power dissipation: 32W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 10.5nC Technology: NPT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXGH25N250 | IXYS |
![]() Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 200A Turn-on time: 301ns Turn-off time: 409ns Type of transistor: IGBT Power dissipation: 250W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 75nC Technology: NPT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXGK75N250 | IXYS |
![]() Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264 Mounting: THT Case: TO264 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 530A Turn-on time: 280ns Turn-off time: 725ns Type of transistor: IGBT Power dissipation: 780W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 410nC Technology: NPT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
MWI75-06A7T | IXYS |
Category: IGBT modules Description: Transistor/transistor; IGBT three-phase bridge,NTC thermistor Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Topology: IGBT three-phase bridge; NTC thermistor Type of semiconductor module: IGBT Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Application: motors Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: NPT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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DPG20C400PB | IXYS |
![]() Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220AB; 65W Reverse recovery time: 45ns Max. forward impulse current: 150A Power dissipation: 65W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Mounting: THT Case: TO220AB Max. off-state voltage: 0.4kV Max. forward voltage: 1.32V Load current: 10A x2 Semiconductor structure: common cathode; double |
auf Bestellung 182 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG20C300PN | IXYS |
![]() Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W Mounting: THT Kind of package: tube Max. off-state voltage: 300V Max. forward voltage: 1.27V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 140A Power dissipation: 35W Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Case: TO220FP |
auf Bestellung 557 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG20C200PN | IXYS |
![]() Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W Case: TO220FP Max. off-state voltage: 200V Max. forward voltage: 1.27V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 140A Power dissipation: 35W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Mounting: THT |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG20C400PN | IXYS |
![]() Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220FP; 35W Reverse recovery time: 45ns Max. forward impulse current: 150A Power dissipation: 35W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Mounting: THT Case: TO220FP Max. off-state voltage: 0.4kV Max. forward voltage: 1.03V Load current: 10A x2 Semiconductor structure: common cathode; double |
auf Bestellung 153 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG20C200PB | IXYS |
![]() Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W Case: TO220AB Max. off-state voltage: 200V Max. forward voltage: 1.27V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 140A Power dissipation: 65W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Mounting: THT |
auf Bestellung 112 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG20C300PB | IXYS |
![]() Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W Mounting: THT Kind of package: tube Max. off-state voltage: 300V Max. forward voltage: 1.27V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 140A Power dissipation: 65W Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Case: TO220AB |
auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG20C400PC-TRL | IXYS |
![]() Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V Reverse recovery time: 45ns Max. forward impulse current: 150A Power dissipation: 65W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ Mounting: SMD Case: TO263AB Max. off-state voltage: 0.4kV Max. forward voltage: 1.51V Load current: 10A x2 Semiconductor structure: common cathode; double |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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DPG10I200PA | IXYS |
![]() Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W Case: TO220AC Max. off-state voltage: 200V Max. forward voltage: 1.27V Load current: 10A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 140A Power dissipation: 65W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Mounting: THT |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG10I300PA | IXYS |
![]() Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 140A Case: TO220AC Max. forward voltage: 1.27V Heatsink thickness: 1.14...1.39mm Reverse recovery time: 35ns Technology: HiPerFRED™ 2nd Gen Power dissipation: 65W |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG10I400PM | IXYS |
![]() Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W Mounting: THT Max. off-state voltage: 0.4kV Max. forward voltage: 1.32V Load current: 10A Semiconductor structure: single diode Reverse recovery time: 45ns Max. forward impulse current: 150A Power dissipation: 35W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Case: TO220FP-2 |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG10I200PM | IXYS |
![]() Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W Case: TO220FP-2 Max. off-state voltage: 200V Max. forward voltage: 1.27V Load current: 10A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 140A Power dissipation: 35W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Mounting: THT |
auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG10I400PA | IXYS |
![]() Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W Mounting: THT Max. off-state voltage: 0.4kV Max. forward voltage: 1.03V Load current: 10A Semiconductor structure: single diode Reverse recovery time: 45ns Max. forward impulse current: 150A Power dissipation: 65W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Case: TO220AC |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG10P400PJ | IXYS |
![]() Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™ Mounting: THT Max. off-state voltage: 0.4kV Max. forward voltage: 1.28V Load current: 10A Semiconductor structure: double series Reverse recovery time: 45ns Max. forward impulse current: 130A Power dissipation: 60W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Case: ISOPLUS220™ |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFR200N10P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™ Case: ISOPLUS247™ Kind of package: tube Drain-source voltage: 100V Drain current: 120A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Gate charge: 235nC Kind of channel: enhancement Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXDN602PI | IXYS |
![]() Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXDN602SIA | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
auf Bestellung 649 Stücke: Lieferzeit 14-21 Tag (e) |
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DSA1-16D | IXYS |
![]() Description: Diode: rectifying; THT; 1.6kV; 2.3A; tube; Ifsm: 110A; FP-Case Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.6kV Load current: 2.3A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect Kind of package: tube Max. forward impulse current: 110A Case: FP-Case Max. forward voltage: 1.34V |
auf Bestellung 324 Stücke: Lieferzeit 14-21 Tag (e) |
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MCC26-12io1B | IXYS |
![]() ![]() ![]() Description: Double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V; Ifsm: 560A; screw Case: TO240AA Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. forward impulse current: 560A Max. off-state voltage: 1.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.64V Type of semiconductor module: thyristor |
auf Bestellung 52 Stücke: Lieferzeit 14-21 Tag (e) |
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MCC26-12io8B | IXYS |
![]() ![]() ![]() Description: Double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; Ifsm: 440A; screw Case: TO240AA Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. forward impulse current: 0.44kA Max. off-state voltage: 1.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.27V Type of semiconductor module: thyristor |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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MCC26-14io1B | IXYS |
![]() ![]() Description: Double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA Case: TO240AA Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. off-state voltage: 1.4kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.65V Type of semiconductor module: thyristor |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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MCC26-16io8B | IXYS |
![]() ![]() Description: Double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA Case: TO240AA Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. off-state voltage: 1.6kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.65V Type of semiconductor module: thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MCC26-08io1B | IXYS |
![]() ![]() Description: Double series; 800V; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA Case: TO240AA Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. off-state voltage: 0.8kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.65V Type of semiconductor module: thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MCC26-08io8B | IXYS |
![]() ![]() Description: Double series; 800V; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA Case: TO240AA Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. off-state voltage: 0.8kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.65V Type of semiconductor module: thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MCC26-14io8B | IXYS |
![]() ![]() Description: Double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA Case: TO240AA Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. off-state voltage: 1.4kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.65V Type of semiconductor module: thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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DSSK48-003BS | IXYS |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 30V; 25Ax2; reel,tape; 105W Max. off-state voltage: 30V Max. forward voltage: 0.35V Load current: 25A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 0.3kA Power dissipation: 105W Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: D2PAK |
auf Bestellung 560 Stücke: Lieferzeit 14-21 Tag (e) |
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IX9907N | IXYS |
![]() Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Output current: 1.7A Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 650V DC Kind of package: tube |
auf Bestellung 498 Stücke: Lieferzeit 14-21 Tag (e) |
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IX9908N | IXYS |
![]() Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Output current: 1.7A Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 650V DC Kind of package: tube |
auf Bestellung 287 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGH32N170A | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 21A Power dissipation: 350W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 110A Mounting: THT Gate charge: 155nC Kind of package: tube Turn-on time: 107ns Turn-off time: 370ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IXFH54N65X3 | IXYS |
![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 54A Pulsed drain current: 70A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 59mΩ Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; X3-Class Reverse recovery time: 140ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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CPC1965Y | IXYS |
![]() Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase Type of relay: solid state Control current max.: 100mA Max. operating current: 1A Switched voltage: max. 260V AC Relay variant: 1-phase Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 19.2x6.35x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV |
auf Bestellung 246 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1965G | IXYS |
![]() Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase Max. operating current: 1A Operating temperature: -40...85°C Body dimensions: 19.2x7.62x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Type of relay: solid state Relay variant: 1-phase Switched voltage: max. 260V AC Control current max.: 100mA Mounting: THT Case: DIP4 |
auf Bestellung 142 Stücke: Lieferzeit 14-21 Tag (e) |
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FMM75-01F | IXYS |
![]() Description: Transistor: N-MOSFET x2; unipolar; 100V; 75A; double series; 300ns Type of transistor: N-MOSFET x2 Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Case: ISOPLUS i4-pac™ x024a Gate-source voltage: ±20V On-state resistance: 25Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Semiconductor structure: double series Reverse recovery time: 300ns |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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MDNA660U2200PTEH | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA Type of bridge rectifier: three-phase Max. off-state voltage: 2.2kV Load current: 660A Max. forward impulse current: 5kA Electrical mounting: Press-Fit Version: module Max. forward voltage: 1.28V Case: E3-Pack Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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VGB0124AY7A | IXYS |
![]() Description: Bridge rectifier: braking rectifier assemblies; Urmax: 1.4kV Type of bridge rectifier: braking rectifier assemblies Max. off-state voltage: 1.4kV Load current: 1A Max. forward impulse current: 60A Electrical mounting: screw Mechanical mounting: screw Version: module Case: VG-A |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA26N50P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263 Drain-source voltage: 500V Drain current: 26A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 500W Polarisation: unipolar Kind of package: tube Gate charge: 42nC Kind of channel: enhancement Mounting: SMD Case: TO263 |
auf Bestellung 76 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA26N30X3 | IXYS |
![]() ![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263 Reverse recovery time: 105ns Drain-source voltage: 300V Drain current: 26A On-state resistance: 66mΩ Type of transistor: N-MOSFET Power dissipation: 170W Polarisation: unipolar Kind of package: tube Gate charge: 22nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: TO263 |
Produkt ist nicht verfügbar |
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MEK300-06DA | IXYS |
![]() Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V Max. off-state voltage: 0.6kV Max. forward voltage: 1.19V Load current: 304A Semiconductor structure: common cathode Max. forward impulse current: 2.4kA Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode Case: Y4-M6 |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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MCB40P1200LB-TRR | IXYS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 55A Case: SMPD-B Gate-source voltage: -5...20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 161nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: double series |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MCB40P1200LB-TUB | IXYS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 55A Case: SMPD-B Gate-source voltage: -5...20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 161nC Kind of package: tube Kind of channel: enhancement Semiconductor structure: double series |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MKE38P600LB | IXYS |
![]() Description: Transistor: N-MOSFET x2; unipolar; 600V; 50A; SMPD; double series Semiconductor structure: double series Reverse recovery time: 660ns Drain-source voltage: 600V Drain current: 50A On-state resistance: 45mΩ Type of transistor: N-MOSFET x2 Polarisation: unipolar Gate charge: 0.19µC Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SMPD |
Produkt ist nicht verfügbar |
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DMA40U1800GU | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A Leads: flat pin Max. off-state voltage: 1.8kV Max. forward voltage: 0.74V Load current: 40A Max. forward impulse current: 370A Electrical mounting: THT Version: flat Type of bridge rectifier: three-phase Case: GUFP |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC2330N | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Operating temperature: -40...85°C Case: SO8 On-state resistance: 30Ω Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Contacts configuration: SPST-NO + SPST-NC Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Mounting: SMT |
auf Bestellung 484 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC2330NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA On-state resistance: 30Ω Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Contacts configuration: SPST-NO + SPST-NC Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Case: SO8 |
Produkt ist nicht verfügbar |
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IXTP450P2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 300W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Gate charge: 43nC Kind of channel: enhancement Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 16A On-state resistance: 0.33Ω Type of transistor: N-MOSFET |
auf Bestellung 177 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA3N100D2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO263 On-state resistance: 6Ω Mounting: SMD Gate charge: 1.02µC Kind of package: tube Kind of channel: depletion Reverse recovery time: 17ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTA3N100D2HV | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO263HV On-state resistance: 6Ω Mounting: SMD Gate charge: 1.02µC Kind of package: tube Kind of channel: depletion Reverse recovery time: 17ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CPC3909CTR | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89 Mounting: SMD Drain-source voltage: 400V Drain current: 0.3A On-state resistance: 9Ω Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±15V Case: SOT89 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
VBO130-16NO7 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 130A; Ifsm: 1.8kA Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 130A Max. forward impulse current: 1.8kA Electrical mounting: screw Mechanical mounting: screw Version: module Leads: M6 screws Case: PWS-E |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
VBO130-08NO7 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 130A; Ifsm: 1.8kA Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 130A Max. forward impulse current: 1.8kA Electrical mounting: screw Mechanical mounting: screw Version: module Leads: M6 screws Case: PWS-E |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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VBO130-12NO7 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 130A; Ifsm: 1.8kA Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 130A Max. forward impulse current: 1.8kA Electrical mounting: screw Mechanical mounting: screw Version: module Leads: M6 screws Case: PWS-E |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
VBO130-18NO7 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 130A; Ifsm: 1.8kA Type of bridge rectifier: single-phase Max. off-state voltage: 1.8kV Load current: 130A Max. forward impulse current: 1.8kA Electrical mounting: screw Mechanical mounting: screw Version: module Leads: M6 screws Case: PWS-E |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MCC44-16io1B | IXYS |
![]() Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V Electrical mounting: screw Case: TO240AA Max. off-state voltage: 1.6kV Max. forward voltage: 1.34V Load current: 49A Semiconductor structure: double series Gate current: 100/200mA Max. forward impulse current: 1.15kA Kind of package: bulk Mechanical mounting: screw Type of semiconductor module: thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MCD162-18io1 | IXYS |
![]() ![]() Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Case: Y4-M6 Kind of package: bulk Max. off-state voltage: 1.8kV Max. load current: 300A Max. forward voltage: 1.03V Load current: 181A Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 6kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.88V Type of semiconductor module: diode-thyristor |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP30N25X3M | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 30A Power dissipation: 36W Case: TO220FP On-state resistance: 60mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 82ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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LBA710S | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 0.6Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
LBA710STR | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 0.6Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IXGH2N250 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 2A
Pulsed collector current: 13.5A
Turn-on time: 115ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 32W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 10.5nC
Technology: NPT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 2A
Pulsed collector current: 13.5A
Turn-on time: 115ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 32W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 10.5nC
Technology: NPT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXGH25N250 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 200A
Turn-on time: 301ns
Turn-off time: 409ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 75nC
Technology: NPT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 200A
Turn-on time: 301ns
Turn-off time: 409ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 75nC
Technology: NPT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXGK75N250 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Mounting: THT
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 530A
Turn-on time: 280ns
Turn-off time: 725ns
Type of transistor: IGBT
Power dissipation: 780W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 410nC
Technology: NPT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Mounting: THT
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 530A
Turn-on time: 280ns
Turn-off time: 725ns
Type of transistor: IGBT
Power dissipation: 780W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 410nC
Technology: NPT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MWI75-06A7T |
Hersteller: IXYS
Category: IGBT modules
Description: Transistor/transistor; IGBT three-phase bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Transistor/transistor; IGBT three-phase bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DPG20C400PB |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220AB; 65W
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A x2
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220AB; 65W
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A x2
Semiconductor structure: common cathode; double
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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21+ | 3.56 EUR |
29+ | 2.49 EUR |
31+ | 2.36 EUR |
DPG20C300PN |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP
auf Bestellung 557 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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33+ | 2.23 EUR |
36+ | 2.02 EUR |
41+ | 1.77 EUR |
45+ | 1.6 EUR |
48+ | 1.52 EUR |
250+ | 1.49 EUR |
DPG20C200PN |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Case: TO220FP
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Case: TO220FP
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.66 EUR |
36+ | 2 EUR |
38+ | 1.89 EUR |
DPG20C400PN |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220FP; 35W
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A x2
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220FP; 35W
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A x2
Semiconductor structure: common cathode; double
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.35 EUR |
24+ | 3.07 EUR |
30+ | 2.43 EUR |
32+ | 2.3 EUR |
DPG20C200PB |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Case: TO220AB
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Case: TO220AB
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.2 EUR |
53+ | 1.36 EUR |
56+ | 1.29 EUR |
DPG20C300PB |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.76 EUR |
29+ | 2.53 EUR |
36+ | 2 EUR |
38+ | 1.9 EUR |
DPG20C400PC-TRL |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: SMD
Case: TO263AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.51V
Load current: 10A x2
Semiconductor structure: common cathode; double
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: SMD
Case: TO263AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.51V
Load current: 10A x2
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DPG10I200PA |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Case: TO220AC
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Case: TO220AC
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.13 EUR |
40+ | 1.82 EUR |
54+ | 1.34 EUR |
57+ | 1.27 EUR |
DPG10I300PA |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220AC
Max. forward voltage: 1.27V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
Power dissipation: 65W
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220AC
Max. forward voltage: 1.27V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
Power dissipation: 65W
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.56 EUR |
DPG10I400PM |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.69 EUR |
43+ | 1.66 EUR |
DPG10I200PM |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Case: TO220FP-2
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Case: TO220FP-2
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.07 EUR |
56+ | 1.27 EUR |
DPG10I400PA |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.33 EUR |
36+ | 2.02 EUR |
42+ | 1.73 EUR |
45+ | 1.6 EUR |
48+ | 1.52 EUR |
DPG10P400PJ |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.28V
Load current: 10A
Semiconductor structure: double series
Reverse recovery time: 45ns
Max. forward impulse current: 130A
Power dissipation: 60W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS220™
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.28V
Load current: 10A
Semiconductor structure: double series
Reverse recovery time: 45ns
Max. forward impulse current: 130A
Power dissipation: 60W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS220™
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.42 EUR |
11+ | 6.66 EUR |
14+ | 5.32 EUR |
15+ | 5.02 EUR |
IXFR200N10P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Kind of package: tube
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 235nC
Kind of channel: enhancement
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Kind of package: tube
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 235nC
Kind of channel: enhancement
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXDN602PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXDN602SIA |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 649 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.62 EUR |
65+ | 1.12 EUR |
70+ | 1.03 EUR |
74+ | 0.97 EUR |
100+ | 0.96 EUR |
300+ | 0.94 EUR |
DSA1-16D |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
auf Bestellung 324 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.91 EUR |
17+ | 4.33 EUR |
18+ | 4.09 EUR |
MCC26-12io1B |
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Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V; Ifsm: 560A; screw
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 560A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.64V
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V; Ifsm: 560A; screw
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 560A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.64V
Type of semiconductor module: thyristor
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 27.07 EUR |
36+ | 26.91 EUR |
MCC26-12io8B |
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Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; Ifsm: 440A; screw
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.27V
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; Ifsm: 440A; screw
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.27V
Type of semiconductor module: thyristor
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 25.71 EUR |
MCC26-14io1B |
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Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 29 EUR |
MCC26-16io8B |
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Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCC26-08io1B |
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Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 800V; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 0.8kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Double series; 800V; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 0.8kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCC26-08io8B |
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Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 800V; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 0.8kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Double series; 800V; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 0.8kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCC26-14io8B |
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Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DSSK48-003BS |
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Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 30V; 25Ax2; reel,tape; 105W
Max. off-state voltage: 30V
Max. forward voltage: 0.35V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.3kA
Power dissipation: 105W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: D2PAK
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 30V; 25Ax2; reel,tape; 105W
Max. off-state voltage: 30V
Max. forward voltage: 0.35V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.3kA
Power dissipation: 105W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: D2PAK
auf Bestellung 560 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.3 EUR |
57+ | 1.26 EUR |
61+ | 1.19 EUR |
64+ | 1.13 EUR |
250+ | 1.1 EUR |
500+ | 1.07 EUR |
IX9907N |
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Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
IX9908N |
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Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
87+ | 0.83 EUR |
97+ | 0.74 EUR |
109+ | 0.66 EUR |
125+ | 0.57 EUR |
132+ | 0.54 EUR |
IXGH32N170A |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFH54N65X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 140ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1965Y |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.05 EUR |
18+ | 4.19 EUR |
19+ | 3.96 EUR |
CPC1965G |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Max. operating current: 1A
Operating temperature: -40...85°C
Body dimensions: 19.2x7.62x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 260V AC
Control current max.: 100mA
Mounting: THT
Case: DIP4
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Max. operating current: 1A
Operating temperature: -40...85°C
Body dimensions: 19.2x7.62x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 260V AC
Control current max.: 100mA
Mounting: THT
Case: DIP4
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.39 EUR |
18+ | 4.05 EUR |
19+ | 3.82 EUR |
FMM75-01F |
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Hersteller: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 75A; double series; 300ns
Type of transistor: N-MOSFET x2
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
Reverse recovery time: 300ns
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 75A; double series; 300ns
Type of transistor: N-MOSFET x2
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
Reverse recovery time: 300ns
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 20.72 EUR |
MDNA660U2200PTEH |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 2.2kV
Load current: 660A
Max. forward impulse current: 5kA
Electrical mounting: Press-Fit
Version: module
Max. forward voltage: 1.28V
Case: E3-Pack
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 2.2kV
Load current: 660A
Max. forward impulse current: 5kA
Electrical mounting: Press-Fit
Version: module
Max. forward voltage: 1.28V
Case: E3-Pack
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VGB0124AY7A |
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Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: braking rectifier assemblies; Urmax: 1.4kV
Type of bridge rectifier: braking rectifier assemblies
Max. off-state voltage: 1.4kV
Load current: 1A
Max. forward impulse current: 60A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Case: VG-A
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: braking rectifier assemblies; Urmax: 1.4kV
Type of bridge rectifier: braking rectifier assemblies
Max. off-state voltage: 1.4kV
Load current: 1A
Max. forward impulse current: 60A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Case: VG-A
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 123.04 EUR |
IXFA26N50P3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Drain-source voltage: 500V
Drain current: 26A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Gate charge: 42nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Drain-source voltage: 500V
Drain current: 26A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Gate charge: 42nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.55 EUR |
30+ | 2.43 EUR |
31+ | 2.33 EUR |
50+ | 2.26 EUR |
IXFA26N30X3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Reverse recovery time: 105ns
Drain-source voltage: 300V
Drain current: 26A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Reverse recovery time: 105ns
Drain-source voltage: 300V
Drain current: 26A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
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MEK300-06DA |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: common cathode
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: Y4-M6
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: common cathode
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: Y4-M6
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 87 EUR |
6+ | 86.41 EUR |
12+ | 83.9 EUR |
MCB40P1200LB-TRR |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: double series
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: double series
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MCB40P1200LB-TUB |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
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MKE38P600LB |
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Hersteller: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 600V; 50A; SMPD; double series
Semiconductor structure: double series
Reverse recovery time: 660ns
Drain-source voltage: 600V
Drain current: 50A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 0.19µC
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SMPD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 600V; 50A; SMPD; double series
Semiconductor structure: double series
Reverse recovery time: 660ns
Drain-source voltage: 600V
Drain current: 50A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 0.19µC
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SMPD
Produkt ist nicht verfügbar
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DMA40U1800GU |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.8kV
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.8kV
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.37 EUR |
7+ | 10.61 EUR |
8+ | 10.04 EUR |
CPC2330N |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Operating temperature: -40...85°C
Case: SO8
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Operating temperature: -40...85°C
Case: SO8
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
auf Bestellung 484 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.59 EUR |
32+ | 2.25 EUR |
34+ | 2.13 EUR |
CPC2330NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
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IXTP450P2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 300W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 300W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.86 EUR |
23+ | 3.2 EUR |
24+ | 3.03 EUR |
100+ | 2.92 EUR |
IXTA3N100D2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Produkt ist nicht verfügbar
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IXTA3N100D2HV |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
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CPC3909CTR |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89
Mounting: SMD
Drain-source voltage: 400V
Drain current: 0.3A
On-state resistance: 9Ω
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Case: SOT89
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89
Mounting: SMD
Drain-source voltage: 400V
Drain current: 0.3A
On-state resistance: 9Ω
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Case: SOT89
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VBO130-16NO7 |
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Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
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VBO130-08NO7 |
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Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
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VBO130-12NO7 |
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Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
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VBO130-18NO7 |
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Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.8kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.8kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
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MCC44-16io1B |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Electrical mounting: screw
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.34V
Load current: 49A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Mechanical mounting: screw
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Electrical mounting: screw
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.34V
Load current: 49A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Mechanical mounting: screw
Type of semiconductor module: thyristor
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MCD162-18io1 |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. load current: 300A
Max. forward voltage: 1.03V
Load current: 181A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Type of semiconductor module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. load current: 300A
Max. forward voltage: 1.03V
Load current: 181A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Type of semiconductor module: diode-thyristor
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 79.09 EUR |
6+ | 76.71 EUR |
IXFP30N25X3M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
Produkt ist nicht verfügbar
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LBA710S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
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LBA710STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
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