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IXTP120N075T2 IXTP120N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA3439A5B43820&compId=IXTA(P)120N075T2.pdf?ci_sign=a989206584ccedc296376c463764890b543910ce Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Case: TO220AB
Reverse recovery time: 50ns
Drain-source voltage: 75V
Drain current: 120A
On-state resistance: 7.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 78nC
Kind of channel: enhancement
Mounting: THT
Produkt ist nicht verfügbar
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IXTP120N04T2 IXTP120N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA2CF46A37D820&compId=IXTA(P)120N04T2.pdf?ci_sign=9781234723d86244a767988de041b1dde0e2fcc1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Case: TO220AB
Reverse recovery time: 35ns
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 58nC
Kind of channel: enhancement
Mounting: THT
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MCMA140PD1600TB MCMA140PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B7921B0CE0C4&compId=MCMA140PD1600TB.pdf?ci_sign=c6eeb5142d57bdd4750d35a87b20279a22ab7570 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.28V
Load current: 140A
Max. load current: 220A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
auf Bestellung 23 Stücke:
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2+42.91 EUR
6+41.27 EUR
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IXFH72N30X3 IXFH72N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBC8AC02F1D8BF&compId=IXF_72N30X3.pdf?ci_sign=09f98a1c935417cb47752418f14c2caee473339d pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO247-3
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
auf Bestellung 13 Stücke:
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6+13.11 EUR
8+9.31 EUR
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IXFQ72N30X3 IXFQ72N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBC8AC02F1D8BF&compId=IXF_72N30X3.pdf?ci_sign=09f98a1c935417cb47752418f14c2caee473339d pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO3P
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
auf Bestellung 298 Stücke:
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6+12.17 EUR
8+8.99 EUR
30+8.65 EUR
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IXTP10P50P IXTP10P50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Case: TO220AB
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -10A
Gate charge: 50nC
Reverse recovery time: 414ns
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Kind of package: tube
auf Bestellung 189 Stücke:
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10+7.94 EUR
14+5.32 EUR
15+5.03 EUR
50+4.93 EUR
100+4.83 EUR
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DSSK28-006BS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC3686BF0EA60C4&compId=DSSK28-006BS.pdf?ci_sign=8d6a2a9b8016799440366e8ba8e32fee545733ca Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15Ax2; tube; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.52V
Max. forward impulse current: 0.3kA
Kind of package: tube
Max. load current: 35A
Power dissipation: 90W
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IXTH90P10P IXTH90P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA05F2055B718BF&compId=IXT_90P10P.pdf?ci_sign=874a10be422ad2b256b9a661a7f0701651c5c108 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -100V
Drain current: -90A
Gate charge: 0.12µC
Reverse recovery time: 144ns
On-state resistance: 25mΩ
Power dissipation: 462W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: TO247-3
Type of transistor: P-MOSFET
auf Bestellung 300 Stücke:
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6+14.06 EUR
8+9.09 EUR
120+8.75 EUR
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IXXH30N65B4 IXXH30N65B4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8DEB991221820&compId=IXXH30N65B4.pdf?ci_sign=bbf00177ee9f048f5be794de090191d96e7b8592 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Type of transistor: IGBT
Power dissipation: 230W
Gate charge: 52nC
Technology: GenX4™; Trench; XPT™
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IXBT2N250 IXBT2N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFD07043005820&compId=IXBH(T)2N250.pdf?ci_sign=adab234c75aabbb58f5d98046e17708bb23548a0 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Mounting: SMD
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 2A
Pulsed collector current: 13A
Turn-on time: 310ns
Turn-off time: 252ns
Type of transistor: IGBT
Power dissipation: 32W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 10.6nC
Technology: BiMOSFET™
Case: TO268
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1+71.5 EUR
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IXXH80N65B4D1 IXXH80N65B4D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE7DFB6358BD820&compId=IXXH80N65B4D1.pdf?ci_sign=5b6961bb362942b072eeea4395a0b19d8d0c5341 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Turn-off time: 222ns
Turn-on time: 125ns
Collector current: 80A
Pulsed collector current: 430A
Collector-emitter voltage: 650V
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IXXH80N65B4H1 IXXH80N65B4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA3648FD9178BF&compId=IXXH80N65B4H1.pdf?ci_sign=a2c8e0ac4e56ecc4129b580ddf983a551d75c6ef Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Turn-off time: 147ns
Turn-on time: 123ns
Collector current: 80A
Pulsed collector current: 430A
Collector-emitter voltage: 650V
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IXTA28P065T IXTA28P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B82DC4A798BF&compId=IXT_28P065T.pdf?ci_sign=f1bef680ca9cf6e62c0af10fbe84210c2fa0873f Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
auf Bestellung 198 Stücke:
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19+3.82 EUR
33+2.19 EUR
35+2.07 EUR
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IXFA12N50P IXFA12N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7AEFCAC3138BF&compId=IXF_12N50P.pdf?ci_sign=3dd36ef8468ec34dac25b7833e04dbc62f9852a3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
auf Bestellung 166 Stücke:
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20+3.73 EUR
22+3.36 EUR
23+3.17 EUR
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IXTP12N50P IXTP12N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: Polar™
auf Bestellung 296 Stücke:
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19+3.86 EUR
21+3.46 EUR
26+2.76 EUR
28+2.62 EUR
250+2.57 EUR
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IXTA12N50P IXTA12N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
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IXFH220N06T3 IXFH220N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
auf Bestellung 4 Stücke:
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4+17.88 EUR
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IXFA220N06T3 IXFA220N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
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IXTP8N65X2 IXTP8N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA53B40A6BF8BF&compId=IXT_8N65X2.pdf?ci_sign=d8fe73a78fa1d8d397b55fa5baf0e28457656378 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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IXFP16N50P IXFP16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 286 Stücke:
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11+6.64 EUR
20+3.58 EUR
22+3.39 EUR
100+3.26 EUR
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IXTP16N50P IXTP16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
auf Bestellung 230 Stücke:
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13+5.52 EUR
21+3.42 EUR
23+3.23 EUR
50+3.13 EUR
100+3.1 EUR
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IXFA16N50P3 IXFA16N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
auf Bestellung 33 Stücke:
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21+3.45 EUR
24+3.1 EUR
30+2.4 EUR
32+2.27 EUR
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IXTT16N50D2 IXTT16N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
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IXTQ16N50P IXTQ16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
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IXFH16N50P IXFH16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
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IXFA16N50P IXFA16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
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IXFH16N50P3 IXFH16N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
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IXTA16N50P IXTA16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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LBA710 LBA710 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE320E0C7&compId=LBA710.pdf?ci_sign=b2bcf3bea0ade2d924338f229a01b2c3b3a17049 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.6Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
auf Bestellung 5 Stücke:
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5+14.3 EUR
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MCD72-08io8B MCD72-08io8B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFF9E05F5C880C4&compId=MCD72-08io8B.pdf?ci_sign=866106dbdcc74352da58c97a5f01fcb2bd1c4ad7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 85A; TO240AA; Ufmax: 1.34V; bulk
Max. off-state voltage: 0.8kV
Load current: 85A
Semiconductor structure: double series
Case: TO240AA
Max. forward voltage: 1.34V
Max. load current: 133A
Max. forward impulse current: 1.7kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
3+32.79 EUR
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IXTH60N20L2 IXTH60N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Kind of channel: enhancement
Case: TO247-3
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: 200V
Drain current: 60A
Reverse recovery time: 330ns
Gate charge: 255nC
On-state resistance: 45mΩ
Power dissipation: 540W
Polarisation: unipolar
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IXTH10P60 IXTH10P60 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E678466B5B8BF&compId=IXT_10P60.pdf?ci_sign=1f66270f133ab710d995425d2a54122a9b741bbc Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Kind of channel: enhancement
Case: TO247-3
Type of transistor: P-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: -600V
Drain current: -10A
Reverse recovery time: 0.5µs
Gate charge: 135nC
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXTH26N60P IXTH26N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D522F688F8B820&compId=IXTH(Q%2CT%2CV)26N60P_S.pdf?ci_sign=00e2f7b4fe95c5c6f2d8b57fcefc771d8841088e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Kind of channel: enhancement
Case: TO247-3
Features of semiconductor devices: standard power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: 600V
Drain current: 26A
Reverse recovery time: 0.5µs
Gate charge: 72nC
On-state resistance: 0.27Ω
Power dissipation: 460W
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXYN100N120C3H1 IXYN100N120C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F3307AD85A7820&compId=IXYN100N120C3H1.pdf?ci_sign=431948e75f5382cc17397fa059ef249bc2666283 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: GenX3™; XPT™
Gate-emitter voltage: ±20V
Collector current: 62A
Pulsed collector current: 440A
Power dissipation: 690W
auf Bestellung 2 Stücke:
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2+56.07 EUR
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IXDN630CI IXDN630CI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 135ns
Turn-on time: 135ns
auf Bestellung 144 Stücke:
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7+10.77 EUR
8+8.97 EUR
9+8.47 EUR
25+8.34 EUR
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IXDI602SIA IXDI602SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 93ns
Turn-on time: 93ns
auf Bestellung 975 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.63 EUR
44+1.66 EUR
68+1.06 EUR
72+1 EUR
300+0.97 EUR
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IXDI614PI IXDI614PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 521 Stücke:
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20+3.58 EUR
32+2.25 EUR
34+2.13 EUR
100+2.04 EUR
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IXDN630MYI IXDN630MYI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 135ns
Turn-on time: 135ns
auf Bestellung 40 Stücke:
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7+10.3 EUR
9+8.14 EUR
10+8.05 EUR
25+7.82 EUR
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IXTP3N100D2 IXTP3N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBD9B42C73B820&compId=IXTA(P)3N100D2.pdf?ci_sign=c245ce0cffe79380fadde6d25a375768a49f0754 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
auf Bestellung 204 Stücke:
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15+5.06 EUR
26+2.76 EUR
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IXTP6N100D2 IXTP6N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D45948322AD820&compId=IXTA(H%2CP)6N100D2.pdf?ci_sign=ae2f4eab8381be464d1f510c96b6fa260d11e708 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.21 EUR
9+8.28 EUR
10+7.84 EUR
50+7.71 EUR
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IXFK26N100P IXFK26N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED0210783C38BF&compId=IXFK26N100P_IXFX26N100P.pdf?ci_sign=e3bbcbcc0f83667d3f1a627314a9d5c5be08eed7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Case: TO264
Mounting: THT
Reverse recovery time: 300ns
On-state resistance: 390mΩ
Drain current: 26A
Gate-source voltage: ±30V
Power dissipation: 780W
Drain-source voltage: 1kV
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 197nC
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IXBF20N360 IXBF20N360 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB0764186D5D820&compId=IXBF20N360.pdf?ci_sign=18410bfd21cf1d94937ff17dfa086a0c8441bd5e Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W
Gate charge: 110nC
Power dissipation: 230W
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Collector-emitter voltage: 3.6kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: ISOPLUS i4-pac™ x024c
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IXBX50N360HV IXBX50N360HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB080BF8F08F820&compId=IXBX50N360HV.pdf?ci_sign=27f7f14b722c1356b8281c22abffec080280743c Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 50A; 660W; TO247HV
Gate charge: 0.21µC
Turn-on time: 889ns
Turn-off time: 1.88µs
Power dissipation: 660W
Collector current: 50A
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Collector-emitter voltage: 3.6kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IXTR140P10T IXTR140P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA05299A4BE38BF&compId=IXTR140P10T.pdf?ci_sign=ba23e76c64dd5f72d2acb545d9b6fb00d610f006 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Mounting: THT
Case: ISOPLUS247™
Reverse recovery time: 130ns
Drain-source voltage: -100V
Drain current: -110A
On-state resistance: 11mΩ
Type of transistor: P-MOSFET
Power dissipation: 270W
Polarisation: unipolar
Kind of package: tube
Gate charge: 400nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Produkt ist nicht verfügbar
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MCC56-12io1B MCC56-12io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4DFEE3B1F8469&compId=MCC56-12IO1B.pdf?ci_sign=3d03519b9644188d274c313de978d4fb29fcc8ed pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Max. forward impulse current: 1.62kA
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 25 Stücke:
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3+30.93 EUR
10+29.74 EUR
Mindestbestellmenge: 3
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IXFP4N100P IXFP4N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D504A4ED455820&compId=IXFA(P)4N100P.pdf?ci_sign=3bc1928e6ac9c7c21646c91f222f882230a1532c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Power dissipation: 150W
auf Bestellung 300 Stücke:
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16+4.5 EUR
18+4.06 EUR
23+3.23 EUR
24+3.06 EUR
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FBE22-06N1 FBE22-06N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE987F5933B49D018BF&compId=FBE22-06N1.pdf?ci_sign=7ea1713ca283cb8800d681aa2a8c9d4a27a181dc Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 22A
Max. forward impulse current: 50A
Electrical mounting: THT
Case: ISOPLUS i4-pac™ x024a
Kind of package: tube
auf Bestellung 246 Stücke:
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4+18.15 EUR
6+12.87 EUR
25+12.54 EUR
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IXKC23N60C5 IXKC23N60C5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC6CB820&compId=IXKC23N60C5.pdf?ci_sign=c1a5b75b3ab726fbed4e498e342a467c0b978d16 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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CPC1302GSTR CPC1302GSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AA7859A3521EC&compId=CPC1302.pdf?ci_sign=144bfd2503e02a373942f882ef05b0562a26aa60 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 1µs
Turn-off time: 80µs
Trigger current: 50mA
Slew rate: 0.25V/μs
Number of channels: 2
Max. off-state voltage: 5V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
Kind of output: Darlington
auf Bestellung 291 Stücke:
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22+3.37 EUR
36+2 EUR
38+1.9 EUR
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IXFR20N80P IXFR20N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B61820&compId=IXFR20N80P.pdf?ci_sign=e95816d40eb28f61bb55a8961068a6212a87de9b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 160W
Case: ISOPLUS247™
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
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6+12.01 EUR
8+9.41 EUR
9+8.91 EUR
30+8.57 EUR
Mindestbestellmenge: 6
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MEA75-12DA MEA75-12DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Case: TO240AA
Semiconductor structure: common anode
Electrical mounting: screw
Mechanical mounting: screw
Load current: 75A
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
3+32.88 EUR
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MCB20P1200LB-TUB MCB20P1200LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492AAB14BE880D6&compId=MCB20P1200LB.pdf?ci_sign=6bfc7396ad52f2b8a4c26e9686129c71656ba3b5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 62nC
On-state resistance: 98mΩ
Drain current: 25.5A
Case: SMPD-B
Drain-source voltage: 1.2kV
Semiconductor structure: double series
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Technology: SiC
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MCB20P1200LB-TRR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492AAB14BE880D6&compId=MCB20P1200LB.pdf?ci_sign=6bfc7396ad52f2b8a4c26e9686129c71656ba3b5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 62nC
On-state resistance: 98mΩ
Drain current: 25.5A
Case: SMPD-B
Drain-source voltage: 1.2kV
Semiconductor structure: double series
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: SiC
Produkt ist nicht verfügbar
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DSEE55-24N1F DSEE55-24N1F IXYS Littelfuse-Power-Semiconductors-DSEE55-24N1F-Datasheet?assetguid=bbc3c036-3bc3-4bdd-bdc6-79f0ab7a10f9 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 800A; Ufmax: 1.56V
Max. forward voltage: 1.56V
Load current: 60A
Power dissipation: 250W
Max. forward impulse current: 0.8kA
Technology: HiPerFRED™
Max. off-state voltage: 1.2kV
Case: ISOPLUS i4-pac™ x024b
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Reverse recovery time: 85ns
Produkt ist nicht verfügbar
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IXTQ22N50P IXTQ22N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDA40D50235820&compId=IXTH(Q%2CV)22N50P_S.pdf?ci_sign=ce2412085be3e0bce70371fe953f27e347b1e073 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
16+4.52 EUR
17+4.28 EUR
Mindestbestellmenge: 10
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IXFH22N50P IXFH22N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC111820&compId=IXFH22N50P.pdf?ci_sign=8586e5293aa35f9bb95f912636881d81bf896a89 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 226 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.42 EUR
13+5.52 EUR
14+5.22 EUR
120+5.02 EUR
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IXFH52N50P2 IXFH52N50P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4B656662E1820&compId=IXFH(T)52N50P2.pdf?ci_sign=7c44fe5509f3cb92524e6dfee4e7d8922d30699d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 113nC
On-state resistance: 0.12Ω
Drain current: 52A
Drain-source voltage: 500V
Power dissipation: 960W
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
6+14.04 EUR
7+10.57 EUR
8+10 EUR
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MMIX1F132N50P3
+1
 		MMIX1F132N50P3 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f132n50p3_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Pulsed drain current: 330A
Power dissipation: 520W
Technology: HiPerFET™; Polar3™
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
2+48.19 EUR
10+46.33 EUR
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IXTH22N50P IXTH22N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDA40D50235820&compId=IXTH(Q%2CV)22N50P_S.pdf?ci_sign=ce2412085be3e0bce70371fe953f27e347b1e073 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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LCA110 LCA110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF03E0C7&compId=LCA110.pdf?ci_sign=c8142c6ee880adf29cd86bcd32b0c988eb9cc4fd Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Case: DIP6
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 35Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
auf Bestellung 548 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.57 EUR
37+1.94 EUR
39+1.84 EUR
50+1.82 EUR
250+1.77 EUR
Mindestbestellmenge: 28
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IXTP120N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA3439A5B43820&compId=IXTA(P)120N075T2.pdf?ci_sign=a989206584ccedc296376c463764890b543910ce
IXTP120N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Case: TO220AB
Reverse recovery time: 50ns
Drain-source voltage: 75V
Drain current: 120A
On-state resistance: 7.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 78nC
Kind of channel: enhancement
Mounting: THT
Produkt ist nicht verfügbar
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IXTP120N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA2CF46A37D820&compId=IXTA(P)120N04T2.pdf?ci_sign=9781234723d86244a767988de041b1dde0e2fcc1
IXTP120N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Case: TO220AB
Reverse recovery time: 35ns
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 58nC
Kind of channel: enhancement
Mounting: THT
Produkt ist nicht verfügbar
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MCMA140PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B7921B0CE0C4&compId=MCMA140PD1600TB.pdf?ci_sign=c6eeb5142d57bdd4750d35a87b20279a22ab7570 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCMA140PD1600TB
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.28V
Load current: 140A
Max. load current: 220A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.91 EUR
6+41.27 EUR
Mindestbestellmenge: 2
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IXFH72N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBC8AC02F1D8BF&compId=IXF_72N30X3.pdf?ci_sign=09f98a1c935417cb47752418f14c2caee473339d pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFH72N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO247-3
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.11 EUR
8+9.31 EUR
Mindestbestellmenge: 6
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IXFQ72N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBC8AC02F1D8BF&compId=IXF_72N30X3.pdf?ci_sign=09f98a1c935417cb47752418f14c2caee473339d pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFQ72N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO3P
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.17 EUR
8+8.99 EUR
30+8.65 EUR
Mindestbestellmenge: 6
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IXTP10P50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e
IXTP10P50P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Case: TO220AB
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -10A
Gate charge: 50nC
Reverse recovery time: 414ns
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Kind of package: tube
auf Bestellung 189 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.94 EUR
14+5.32 EUR
15+5.03 EUR
50+4.93 EUR
100+4.83 EUR
Mindestbestellmenge: 10
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DSSK28-006BS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC3686BF0EA60C4&compId=DSSK28-006BS.pdf?ci_sign=8d6a2a9b8016799440366e8ba8e32fee545733ca
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15Ax2; tube; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.52V
Max. forward impulse current: 0.3kA
Kind of package: tube
Max. load current: 35A
Power dissipation: 90W
Produkt ist nicht verfügbar
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IXTH90P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA05F2055B718BF&compId=IXT_90P10P.pdf?ci_sign=874a10be422ad2b256b9a661a7f0701651c5c108
IXTH90P10P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -100V
Drain current: -90A
Gate charge: 0.12µC
Reverse recovery time: 144ns
On-state resistance: 25mΩ
Power dissipation: 462W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: TO247-3
Type of transistor: P-MOSFET
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.06 EUR
8+9.09 EUR
120+8.75 EUR
Mindestbestellmenge: 6
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IXXH30N65B4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8DEB991221820&compId=IXXH30N65B4.pdf?ci_sign=bbf00177ee9f048f5be794de090191d96e7b8592
IXXH30N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Type of transistor: IGBT
Power dissipation: 230W
Gate charge: 52nC
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXBT2N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFD07043005820&compId=IXBH(T)2N250.pdf?ci_sign=adab234c75aabbb58f5d98046e17708bb23548a0
IXBT2N250
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Mounting: SMD
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 2A
Pulsed collector current: 13A
Turn-on time: 310ns
Turn-off time: 252ns
Type of transistor: IGBT
Power dissipation: 32W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 10.6nC
Technology: BiMOSFET™
Case: TO268
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXXH80N65B4D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE7DFB6358BD820&compId=IXXH80N65B4D1.pdf?ci_sign=5b6961bb362942b072eeea4395a0b19d8d0c5341
IXXH80N65B4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Turn-off time: 222ns
Turn-on time: 125ns
Collector current: 80A
Pulsed collector current: 430A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IXXH80N65B4H1 pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA3648FD9178BF&compId=IXXH80N65B4H1.pdf?ci_sign=a2c8e0ac4e56ecc4129b580ddf983a551d75c6ef
IXXH80N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Turn-off time: 147ns
Turn-on time: 123ns
Collector current: 80A
Pulsed collector current: 430A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IXTA28P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B82DC4A798BF&compId=IXT_28P065T.pdf?ci_sign=f1bef680ca9cf6e62c0af10fbe84210c2fa0873f
IXTA28P065T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.82 EUR
33+2.19 EUR
35+2.07 EUR
Mindestbestellmenge: 19
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IXFA12N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7AEFCAC3138BF&compId=IXF_12N50P.pdf?ci_sign=3dd36ef8468ec34dac25b7833e04dbc62f9852a3
IXFA12N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.73 EUR
22+3.36 EUR
23+3.17 EUR
Mindestbestellmenge: 20
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IXTP12N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8
IXTP12N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: Polar™
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.86 EUR
21+3.46 EUR
26+2.76 EUR
28+2.62 EUR
250+2.57 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IXTA12N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8
IXTA12N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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IXFH220N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045
IXFH220N06T3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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IXFA220N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045
IXFA220N06T3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP8N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA53B40A6BF8BF&compId=IXT_8N65X2.pdf?ci_sign=d8fe73a78fa1d8d397b55fa5baf0e28457656378
IXTP8N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFP16N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7
IXFP16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.64 EUR
20+3.58 EUR
22+3.39 EUR
100+3.26 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXTP16N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1
IXTP16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.52 EUR
21+3.42 EUR
23+3.23 EUR
50+3.13 EUR
100+3.1 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXFA16N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da
IXFA16N50P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.45 EUR
24+3.1 EUR
30+2.4 EUR
32+2.27 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IXTT16N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005
IXTT16N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
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IXTQ16N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1
IXTQ16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH16N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7
IXFH16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA16N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7
IXFA16N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH16N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da
IXFH16N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA16N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1
IXTA16N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LBA710 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE320E0C7&compId=LBA710.pdf?ci_sign=b2bcf3bea0ade2d924338f229a01b2c3b3a17049
LBA710
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.6Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
MCD72-08io8B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFF9E05F5C880C4&compId=MCD72-08io8B.pdf?ci_sign=866106dbdcc74352da58c97a5f01fcb2bd1c4ad7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCD72-08io8B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 85A; TO240AA; Ufmax: 1.34V; bulk
Max. off-state voltage: 0.8kV
Load current: 85A
Semiconductor structure: double series
Case: TO240AA
Max. forward voltage: 1.34V
Max. load current: 133A
Max. forward impulse current: 1.7kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.79 EUR
Mindestbestellmenge: 3
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IXTH60N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442
IXTH60N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Kind of channel: enhancement
Case: TO247-3
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: 200V
Drain current: 60A
Reverse recovery time: 330ns
Gate charge: 255nC
On-state resistance: 45mΩ
Power dissipation: 540W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH10P60 pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E678466B5B8BF&compId=IXT_10P60.pdf?ci_sign=1f66270f133ab710d995425d2a54122a9b741bbc
IXTH10P60
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Kind of channel: enhancement
Case: TO247-3
Type of transistor: P-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: -600V
Drain current: -10A
Reverse recovery time: 0.5µs
Gate charge: 135nC
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH26N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D522F688F8B820&compId=IXTH(Q%2CT%2CV)26N60P_S.pdf?ci_sign=00e2f7b4fe95c5c6f2d8b57fcefc771d8841088e
IXTH26N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Kind of channel: enhancement
Case: TO247-3
Features of semiconductor devices: standard power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: 600V
Drain current: 26A
Reverse recovery time: 0.5µs
Gate charge: 72nC
On-state resistance: 0.27Ω
Power dissipation: 460W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYN100N120C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F3307AD85A7820&compId=IXYN100N120C3H1.pdf?ci_sign=431948e75f5382cc17397fa059ef249bc2666283
IXYN100N120C3H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: GenX3™; XPT™
Gate-emitter voltage: ±20V
Collector current: 62A
Pulsed collector current: 440A
Power dissipation: 690W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+56.07 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXDN630CI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDN630CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 135ns
Turn-on time: 135ns
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.77 EUR
8+8.97 EUR
9+8.47 EUR
25+8.34 EUR
Mindestbestellmenge: 7
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IXDI602SIA pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDI602SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 93ns
Turn-on time: 93ns
auf Bestellung 975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.63 EUR
44+1.66 EUR
68+1.06 EUR
72+1 EUR
300+0.97 EUR
Mindestbestellmenge: 28
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IXDI614PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDI614PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 521 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
32+2.25 EUR
34+2.13 EUR
100+2.04 EUR
Mindestbestellmenge: 20
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IXDN630MYI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDN630MYI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 135ns
Turn-on time: 135ns
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.3 EUR
9+8.14 EUR
10+8.05 EUR
25+7.82 EUR
Mindestbestellmenge: 7
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IXTP3N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBD9B42C73B820&compId=IXTA(P)3N100D2.pdf?ci_sign=c245ce0cffe79380fadde6d25a375768a49f0754
IXTP3N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.06 EUR
26+2.76 EUR
28+2.62 EUR
Mindestbestellmenge: 15
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IXTP6N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D45948322AD820&compId=IXTA(H%2CP)6N100D2.pdf?ci_sign=ae2f4eab8381be464d1f510c96b6fa260d11e708
IXTP6N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.21 EUR
9+8.28 EUR
10+7.84 EUR
50+7.71 EUR
Mindestbestellmenge: 7
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IXFK26N100P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED0210783C38BF&compId=IXFK26N100P_IXFX26N100P.pdf?ci_sign=e3bbcbcc0f83667d3f1a627314a9d5c5be08eed7
IXFK26N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Case: TO264
Mounting: THT
Reverse recovery time: 300ns
On-state resistance: 390mΩ
Drain current: 26A
Gate-source voltage: ±30V
Power dissipation: 780W
Drain-source voltage: 1kV
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 197nC
Produkt ist nicht verfügbar
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IXBF20N360 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB0764186D5D820&compId=IXBF20N360.pdf?ci_sign=18410bfd21cf1d94937ff17dfa086a0c8441bd5e
IXBF20N360
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W
Gate charge: 110nC
Power dissipation: 230W
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Collector-emitter voltage: 3.6kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: ISOPLUS i4-pac™ x024c
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IXBX50N360HV pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB080BF8F08F820&compId=IXBX50N360HV.pdf?ci_sign=27f7f14b722c1356b8281c22abffec080280743c
IXBX50N360HV
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 50A; 660W; TO247HV
Gate charge: 0.21µC
Turn-on time: 889ns
Turn-off time: 1.88µs
Power dissipation: 660W
Collector current: 50A
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Collector-emitter voltage: 3.6kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IXTR140P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA05299A4BE38BF&compId=IXTR140P10T.pdf?ci_sign=ba23e76c64dd5f72d2acb545d9b6fb00d610f006
IXTR140P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Mounting: THT
Case: ISOPLUS247™
Reverse recovery time: 130ns
Drain-source voltage: -100V
Drain current: -110A
On-state resistance: 11mΩ
Type of transistor: P-MOSFET
Power dissipation: 270W
Polarisation: unipolar
Kind of package: tube
Gate charge: 400nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Produkt ist nicht verfügbar
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MCC56-12io1B pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4DFEE3B1F8469&compId=MCC56-12IO1B.pdf?ci_sign=3d03519b9644188d274c313de978d4fb29fcc8ed pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCC56-12io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Max. forward impulse current: 1.62kA
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+30.93 EUR
10+29.74 EUR
Mindestbestellmenge: 3
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IXFP4N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D504A4ED455820&compId=IXFA(P)4N100P.pdf?ci_sign=3bc1928e6ac9c7c21646c91f222f882230a1532c
IXFP4N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Power dissipation: 150W
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.5 EUR
18+4.06 EUR
23+3.23 EUR
24+3.06 EUR
Mindestbestellmenge: 16
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FBE22-06N1 pVersion=0046&contRep=ZT&docId=005056AB82531EE987F5933B49D018BF&compId=FBE22-06N1.pdf?ci_sign=7ea1713ca283cb8800d681aa2a8c9d4a27a181dc
FBE22-06N1
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 22A
Max. forward impulse current: 50A
Electrical mounting: THT
Case: ISOPLUS i4-pac™ x024a
Kind of package: tube
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.15 EUR
6+12.87 EUR
25+12.54 EUR
Mindestbestellmenge: 4
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IXKC23N60C5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC6CB820&compId=IXKC23N60C5.pdf?ci_sign=c1a5b75b3ab726fbed4e498e342a467c0b978d16
IXKC23N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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CPC1302GSTR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AA7859A3521EC&compId=CPC1302.pdf?ci_sign=144bfd2503e02a373942f882ef05b0562a26aa60
CPC1302GSTR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 1µs
Turn-off time: 80µs
Trigger current: 50mA
Slew rate: 0.25V/μs
Number of channels: 2
Max. off-state voltage: 5V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
Kind of output: Darlington
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.37 EUR
36+2 EUR
38+1.9 EUR
Mindestbestellmenge: 22
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IXFR20N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B61820&compId=IXFR20N80P.pdf?ci_sign=e95816d40eb28f61bb55a8961068a6212a87de9b
IXFR20N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 160W
Case: ISOPLUS247™
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.01 EUR
8+9.41 EUR
9+8.91 EUR
30+8.57 EUR
Mindestbestellmenge: 6
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MEA75-12DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MEA75-12DA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Case: TO240AA
Semiconductor structure: common anode
Electrical mounting: screw
Mechanical mounting: screw
Load current: 75A
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.88 EUR
Mindestbestellmenge: 3
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MCB20P1200LB-TUB pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492AAB14BE880D6&compId=MCB20P1200LB.pdf?ci_sign=6bfc7396ad52f2b8a4c26e9686129c71656ba3b5
MCB20P1200LB-TUB
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 62nC
On-state resistance: 98mΩ
Drain current: 25.5A
Case: SMPD-B
Drain-source voltage: 1.2kV
Semiconductor structure: double series
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Technology: SiC
Produkt ist nicht verfügbar
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MCB20P1200LB-TRR pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492AAB14BE880D6&compId=MCB20P1200LB.pdf?ci_sign=6bfc7396ad52f2b8a4c26e9686129c71656ba3b5
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 62nC
On-state resistance: 98mΩ
Drain current: 25.5A
Case: SMPD-B
Drain-source voltage: 1.2kV
Semiconductor structure: double series
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: SiC
Produkt ist nicht verfügbar
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DSEE55-24N1F Littelfuse-Power-Semiconductors-DSEE55-24N1F-Datasheet?assetguid=bbc3c036-3bc3-4bdd-bdc6-79f0ab7a10f9
DSEE55-24N1F
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 800A; Ufmax: 1.56V
Max. forward voltage: 1.56V
Load current: 60A
Power dissipation: 250W
Max. forward impulse current: 0.8kA
Technology: HiPerFRED™
Max. off-state voltage: 1.2kV
Case: ISOPLUS i4-pac™ x024b
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Reverse recovery time: 85ns
Produkt ist nicht verfügbar
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IXTQ22N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDA40D50235820&compId=IXTH(Q%2CV)22N50P_S.pdf?ci_sign=ce2412085be3e0bce70371fe953f27e347b1e073
IXTQ22N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
16+4.52 EUR
17+4.28 EUR
Mindestbestellmenge: 10
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IXFH22N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC111820&compId=IXFH22N50P.pdf?ci_sign=8586e5293aa35f9bb95f912636881d81bf896a89
IXFH22N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 226 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.42 EUR
13+5.52 EUR
14+5.22 EUR
120+5.02 EUR
Mindestbestellmenge: 10
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IXFH52N50P2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4B656662E1820&compId=IXFH(T)52N50P2.pdf?ci_sign=7c44fe5509f3cb92524e6dfee4e7d8922d30699d
IXFH52N50P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 113nC
On-state resistance: 0.12Ω
Drain current: 52A
Drain-source voltage: 500V
Power dissipation: 960W
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.04 EUR
7+10.57 EUR
8+10 EUR
Mindestbestellmenge: 6
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MMIX1F132N50P3 littelfuse_discrete_mosfets_smpd_packages_mmix1f132n50p3_datasheet.pdf.pdf
MMIX1F132N50P3
+1
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Pulsed drain current: 330A
Power dissipation: 520W
Technology: HiPerFET™; Polar3™
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+48.19 EUR
10+46.33 EUR
Mindestbestellmenge: 2
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IXTH22N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDA40D50235820&compId=IXTH(Q%2CV)22N50P_S.pdf?ci_sign=ce2412085be3e0bce70371fe953f27e347b1e073
IXTH22N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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LCA110 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF03E0C7&compId=LCA110.pdf?ci_sign=c8142c6ee880adf29cd86bcd32b0c988eb9cc4fd
LCA110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Case: DIP6
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 35Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
auf Bestellung 548 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
37+1.94 EUR
39+1.84 EUR
50+1.82 EUR
250+1.77 EUR
Mindestbestellmenge: 28
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