Foto | Bezeichnung | Hersteller | Beschreibung |
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MDD312-22N1 | IXYS |
![]() Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 2.2kV Type of semiconductor module: diode Semiconductor structure: double series Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.03V Load current: 310A Max. load current: 520A Max. forward impulse current: 9.18kA |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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MDD312-18N1 | IXYS |
![]() Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.8kV Type of semiconductor module: diode Semiconductor structure: double series Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.03V Load current: 310A Max. forward impulse current: 10.8kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MDD312-16N1 | IXYS |
![]() Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.6kV Type of semiconductor module: diode Semiconductor structure: double series Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.03V Load current: 310A Max. load current: 520A Max. forward impulse current: 9.18kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MDD312-12N1 | IXYS |
![]() Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.2kV Type of semiconductor module: diode Semiconductor structure: double series Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.03V Load current: 310A Max. load current: 520A Max. forward impulse current: 9.18kA |
Produkt ist nicht verfügbar |
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MCD312-18io1 | IXYS |
![]() Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.8kV Type of semiconductor module: diode-thyristor Semiconductor structure: double series Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Electrical mounting: screw Gate current: 150/220mA Threshold on-voltage: 0.8V Max. forward voltage: 1.06V Load current: 320A Max. load current: 520A Max. forward impulse current: 9.6kA Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MCD312-14io1 | IXYS |
![]() Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.4kV Type of semiconductor module: diode-thyristor Semiconductor structure: double series Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Electrical mounting: screw Gate current: 150/220mA Threshold on-voltage: 0.8V Max. forward voltage: 1.06V Load current: 320A Max. load current: 520A Max. forward impulse current: 9.6kA Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
MDD312-14N1 | IXYS |
![]() Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.4kV Type of semiconductor module: diode Semiconductor structure: double series Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.03V Load current: 310A Max. forward impulse current: 10.8kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MDD312-20N1 | IXYS |
![]() Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 2kV Type of semiconductor module: diode Semiconductor structure: double series Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.03V Load current: 310A Max. forward impulse current: 10.8kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MCD312-12io1 | IXYS |
![]() Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.2kV Type of semiconductor module: diode-thyristor Semiconductor structure: double series Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Electrical mounting: screw Gate current: 150/220mA Threshold on-voltage: 0.8V Max. forward voltage: 1.06V Load current: 320A Max. load current: 520A Max. forward impulse current: 9.6kA Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CPC1976Y | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; 1-phase Operating temperature: -40...85°C Max. operating current: 2A Body dimensions: 21.08x10.16x3.3mm Control current max.: 50mA Switched voltage: max. 240V AC Relay variant: 1-phase Insulation voltage: 3.75kV Case: SIP4 Switching method: zero voltage switching Mounting: THT Type of relay: solid state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CPC1393GR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC Type of relay: solid state Control current max.: 50mA Max. operating current: 90mA Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source Mounting: SMT Case: DIP4 Body dimensions: 4.57x6.35x3.3mm Insulation voltage: 5kV Operating temperature: -40...85°C Turn-off time: 5ms On-state resistance: 50Ω Contacts configuration: SPST-NO Manufacturer series: OptoMOS Turn-on time: 5ms Kind of output: MOSFET |
auf Bestellung 675 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1963G | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase Type of relay: solid state Control current max.: 50mA Max. operating current: 0.5A Switched voltage: max. 600V AC Relay variant: 1-phase Mounting: THT Case: DIP6 Body dimensions: 9.65x6.35x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV Operating temperature: -40...85°C |
auf Bestellung 364 Stücke: Lieferzeit 14-21 Tag (e) |
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MDO600-16N1 | IXYS |
![]() Description: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 1.01V Mechanical mounting: screw Type of semiconductor module: diode Semiconductor structure: single diode Electrical mounting: screw Case: Y1-CU Max. forward voltage: 1.01V Load current: 560A Max. forward impulse current: 12.8kA Max. off-state voltage: 1.6kV |
Produkt ist nicht verfügbar |
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IXFN180N25T | IXYS |
![]() Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 250V Drain current: 168A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 12.9mΩ Pulsed drain current: 500A Power dissipation: 900W Technology: GigaMOS™ Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 200ns Gate charge: 364nC Kind of channel: enhancement |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP12N70X2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 12A Pulsed drain current: 24A Power dissipation: 180W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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MCMA25P1600TA | IXYS |
![]() ![]() Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V Kind of package: bulk Type of semiconductor module: thyristor Semiconductor structure: double series Electrical mounting: screw Mechanical mounting: screw Case: TO240AA Gate current: 55/80mA Max. forward voltage: 1.52V Load current: 25A Max. off-state voltage: 1.6kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MDMA425P1600PTSF | IXYS |
![]() Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA Type of semiconductor module: diode Semiconductor structure: double series Electrical mounting: Press-Fit Mechanical mounting: screw Case: SimBus F Load current: 425A Max. off-state voltage: 1.6kV Max. forward impulse current: 10kA |
Produkt ist nicht verfügbar |
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VUO52-16NO1 | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 60A Max. forward impulse current: 350A Electrical mounting: FASTON connectors Version: module Max. forward voltage: 0.83V Leads: connectors Leads dimensions: 2x0.5mm Case: V1-A-Pack Mechanical mounting: screw |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN604PI | IXYS |
![]() ![]() Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -4...4A Number of channels: 2 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
auf Bestellung 238 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN604SIA | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -4...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
auf Bestellung 656 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN604SI | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -4...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
auf Bestellung 879 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN604SIATR | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -4...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
Produkt ist nicht verfügbar |
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IXDN602D2TR | IXYS |
![]() Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V Supply voltage: 4.5...35V Case: DFN8 Kind of output: non-inverting Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Output current: -2...2A Turn-off time: 93ns Turn-on time: 93ns Number of channels: 2 Kind of integrated circuit: gate driver; low-side Type of integrated circuit: driver |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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MCMA120UJ1800ED | IXYS |
![]() Description: Bridge rectifier: half-controlled; Urmax: 1.8kV; If: 120A; E2-Pack Electrical mounting: Press-in PCB Case: E2-Pack Mechanical mounting: screw Features of semiconductor devices: freewheelling diode Type of bridge rectifier: half-controlled Version: module Gate current: 70/150mA Max. forward voltage: 1.36V Load current: 120A Max. forward impulse current: 0.5kA Max. off-state voltage: 1.8kV |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTN110N20L2 | IXYS |
![]() Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 275A Power dissipation: 735W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 24mΩ Gate charge: 500nC Kind of channel: enhancement Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: MOSFET transistor Technology: Linear L2™ Reverse recovery time: 420ns Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
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IXTK110N20L2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 110A Power dissipation: 960W Case: TO264 On-state resistance: 24mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 420ns |
Produkt ist nicht verfügbar |
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OMA160 | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC Operating temperature: -40...85°C Manufacturer series: OptoMOS Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO Turn-off time: 125µs Turn-on time: 125µs Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Max. operating current: 50mA On-state resistance: 100Ω Switched voltage: max. 250V AC; max. 250V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP6 |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1010N | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 11.5Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
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CPC1010NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 11.5Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
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CPC1020NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 1.2A Switched voltage: max. 30V AC; max. 30V DC Manufacturer series: OptoMOS Relay variant: current source On-state resistance: 0.25Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
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CPC1019NTR | IXYS |
![]() Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C Type of relay: solid state Max. operating current: 750mA Switched voltage: max. 60V DC Mounting: SMT Case: SOP4 Manufacturer series: OptoMOS Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...85°C Turn-on time: 3ms Turn-off time: 3ms Contacts configuration: SPST-NO On-state resistance: 0.6Ω Control current max.: 50mA Kind of output: MOSFET Insulation voltage: 1.5kV |
Produkt ist nicht verfügbar |
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CPC1004NTR | IXYS |
![]() Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV Type of relay: solid state Max. operating current: 300mA Switched voltage: max. 100V DC Mounting: SMT Case: SOP4 Relay variant: current source Manufacturer series: OptoMOS Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...110°C Turn-on time: 3ms Turn-off time: 1ms Contacts configuration: SPST-NO On-state resistance: 4Ω Control current max.: 50mA Kind of output: MOSFET Insulation voltage: 1.5kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CPC1030NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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CPC1006NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 75mA Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 10Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
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DSEP60-12A | IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 0.5kA Case: TO247-2 Max. forward voltage: 1.81V Power dissipation: 330W Reverse recovery time: 40ns Technology: HiPerFRED™ |
auf Bestellung 241 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEP60-12AR | IXYS |
![]() ![]() Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™ Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 0.5kA Case: ISOPLUS247™ Max. forward voltage: 2.66V Power dissipation: 230W Reverse recovery time: 40ns Technology: HiPerFRED™ |
Produkt ist nicht verfügbar |
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CPC1706Y | IXYS |
![]() Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω Type of relay: solid state Control current max.: 50mA Max. operating current: 4A Switched voltage: max. 60V DC Relay variant: current source Mounting: THT Case: SOP4 Body dimensions: 21.08x10.16x3.3mm Insulation voltage: 2.5kV Operating temperature: -40...85°C Turn-off time: 2ms On-state resistance: 90mΩ Contacts configuration: SPST-NO Manufacturer series: OptoMOS Turn-on time: 5ms Kind of output: MOSFET |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP12N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Gate charge: 29nC On-state resistance: 0.5Ω Kind of channel: enhancement Drain current: 12A Drain-source voltage: 500V |
Produkt ist nicht verfügbar |
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MIXG330PF1200PTSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Case: SimBus F Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Technology: X2PT Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: IGBT half-bridge; NTC thermistor |
Produkt ist nicht verfügbar |
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CPC5602CTR | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.13A Power dissipation: 2.5W Case: SOT223 On-state resistance: 14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±20V |
auf Bestellung 586 Stücke: Lieferzeit 14-21 Tag (e) |
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VHFD37-16IO1 | IXYS |
![]() Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw Type of bridge rectifier: half-controlled Max. off-state voltage: 1.6kV Load current: 40A Max. forward impulse current: 280A Electrical mounting: FASTON connectors Version: module Leads: connectors Case: V1-A-Pack Mechanical mounting: screw Leads dimensions: 2x0.5mm Features of semiconductor devices: field diodes; freewheelling diode Gate current: 50/80mA |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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PLA191S | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 3ms Turn-off time: 1ms Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) |
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MDMA660U1600PTEH | IXYS |
![]() Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module Case: E3-Pack Mechanical mounting: screw Electrical mounting: Press-Fit Version: module Load current: 660A Max. forward impulse current: 5kA Max. off-state voltage: 1.6kV Type of bridge rectifier: three-phase |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEI30-10A | IXYS |
![]() ![]() Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 185A Case: TO247-2 Max. forward voltage: 2V Power dissipation: 138W Reverse recovery time: 35ns Technology: FRED |
auf Bestellung 212 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH120N20P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 120A Power dissipation: 714W Case: TO247-3 On-state resistance: 22mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 100ns Technology: HiPerFET™; Polar™ |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC3701CTR | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89 Case: SOT89 Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 0.6A On-state resistance: 1Ω Power dissipation: 1.1W Gate-source voltage: ±15V Drain-source voltage: 60V |
auf Bestellung 330 Stücke: Lieferzeit 14-21 Tag (e) |
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IXXH100N60B3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3 Mounting: THT Turn-off time: 350ns Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 480A Collector-emitter voltage: 600V Power dissipation: 830W Technology: GenX3™; Planar; XPT™ Type of transistor: IGBT Case: TO247-3 Kind of package: tube Turn-on time: 92ns Gate charge: 143nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXDN609SI | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 1580 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN609SIA | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 427 Stücke: Lieferzeit 14-21 Tag (e) |
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LF2136BTR | IXYS |
![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Output current: -0.35...0.2A Operating temperature: -40...125°C Supply voltage: 10...20V Case: SO28 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Mounting: SMD Number of channels: 6 Voltage class: 600V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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PBA150S | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 7Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 2.5ms Turn-off time: 2.5ms Operating temperature: -40...85°C |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGH10N170A | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3 Technology: NPT Mounting: THT Kind of package: tube Gate charge: 29nC Turn-on time: 107ns Turn-off time: 240ns Collector current: 5A Pulsed collector current: 20A Gate-emitter voltage: ±20V Power dissipation: 140W Collector-emitter voltage: 1.7kV Case: TO247-3 Features of semiconductor devices: high voltage Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTA50N20P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO263 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTA50N25T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO263 On-state resistance: 60mΩ Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 166ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTH24N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 390W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Technology: X2-Class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IXFA34N65X3 | IXYS |
![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO263 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: HiPerFET™; X3-Class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IXFH34N65X3 | IXYS |
![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: HiPerFET™; X3-Class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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DSSS35-008AR | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 80V; 35Ax2; ISOPLUS247™; 190W Mounting: THT Type of diode: Schottky rectifying Kind of package: tube Load current: 35A x2 Power dissipation: 190W Max. forward voltage: 0.68V Max. forward impulse current: 0.6kA Semiconductor structure: double series Case: ISOPLUS247™ Max. off-state voltage: 80V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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LOC110S | IXYS |
![]() Description: Optocoupler; SMD; OUT: photodiode; 3.75kV Mounting: SMD Kind of output: photodiode Type of optocoupler: optocoupler Insulation voltage: 3.75kV |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC2907B | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS Case: PowerSO8 Mounting: SMT Kind of output: MOSFET Type of relay: solid state Contacts configuration: SPST-NO x2 Operating temperature: -40...85°C Turn-off time: 0.25ms Turn-on time: 2.5ms On-state resistance: 0.15Ω Body dimensions: 21.08x10.16x3.3mm Control current max.: 50mA Max. operating current: 2A Switched voltage: max. 60V AC; max. 60V DC Insulation voltage: 4kV Relay variant: 1-phase; current source Manufacturer series: OptoMOS |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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MDD312-22N1 |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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1+ | 180.44 EUR |
MDD312-18N1 |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. forward impulse current: 10.8kA
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. forward impulse current: 10.8kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MDD312-16N1 |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MDD312-12N1 |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCD312-18io1 |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCD312-14io1 |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MDD312-14N1 |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. forward impulse current: 10.8kA
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. forward impulse current: 10.8kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MDD312-20N1 |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. forward impulse current: 10.8kA
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. forward impulse current: 10.8kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCD312-12io1 |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1976Y |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 2A
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Switched voltage: max. 240V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: SIP4
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 2A
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Switched voltage: max. 240V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: SIP4
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1393GR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 50Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 50Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
auf Bestellung 675 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.67 EUR |
33+ | 2.19 EUR |
35+ | 2.07 EUR |
50+ | 1.99 EUR |
CPC1963G |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
auf Bestellung 364 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.42 EUR |
13+ | 5.61 EUR |
250+ | 5.49 EUR |
MDO600-16N1 |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 1.01V
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Electrical mounting: screw
Case: Y1-CU
Max. forward voltage: 1.01V
Load current: 560A
Max. forward impulse current: 12.8kA
Max. off-state voltage: 1.6kV
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 1.01V
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Electrical mounting: screw
Case: Y1-CU
Max. forward voltage: 1.01V
Load current: 560A
Max. forward impulse current: 12.8kA
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN180N25T |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 364nC
Kind of channel: enhancement
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 364nC
Kind of channel: enhancement
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 27.5 EUR |
10+ | 26.44 EUR |
IXTP12N70X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.51 EUR |
MCMA25P1600TA |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Kind of package: bulk
Type of semiconductor module: thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Case: TO240AA
Gate current: 55/80mA
Max. forward voltage: 1.52V
Load current: 25A
Max. off-state voltage: 1.6kV
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Kind of package: bulk
Type of semiconductor module: thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Case: TO240AA
Gate current: 55/80mA
Max. forward voltage: 1.52V
Load current: 25A
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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MDMA425P1600PTSF |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: Press-Fit
Mechanical mounting: screw
Case: SimBus F
Load current: 425A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: Press-Fit
Mechanical mounting: screw
Case: SimBus F
Load current: 425A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
Produkt ist nicht verfügbar
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VUO52-16NO1 |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 0.83V
Leads: connectors
Leads dimensions: 2x0.5mm
Case: V1-A-Pack
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 0.83V
Leads: connectors
Leads dimensions: 2x0.5mm
Case: V1-A-Pack
Mechanical mounting: screw
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 36.49 EUR |
3+ | 34.81 EUR |
5+ | 33.85 EUR |
10+ | 33.46 EUR |
IXDN604PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.12 EUR |
47+ | 1.53 EUR |
48+ | 1.5 EUR |
51+ | 1.42 EUR |
IXDN604SIA |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 656 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.77 EUR |
47+ | 1.53 EUR |
48+ | 1.5 EUR |
51+ | 1.42 EUR |
IXDN604SI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 879 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.19 EUR |
29+ | 2.53 EUR |
30+ | 2.39 EUR |
200+ | 2.35 EUR |
300+ | 2.3 EUR |
IXDN604SIATR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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IXDN602D2TR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Supply voltage: 4.5...35V
Case: DFN8
Kind of output: non-inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Turn-off time: 93ns
Turn-on time: 93ns
Number of channels: 2
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Supply voltage: 4.5...35V
Case: DFN8
Kind of output: non-inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Turn-off time: 93ns
Turn-on time: 93ns
Number of channels: 2
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.52 EUR |
44+ | 1.63 EUR |
69+ | 1.04 EUR |
73+ | 0.99 EUR |
250+ | 0.96 EUR |
500+ | 0.94 EUR |
MCMA120UJ1800ED |
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Hersteller: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.8kV; If: 120A; E2-Pack
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Features of semiconductor devices: freewheelling diode
Type of bridge rectifier: half-controlled
Version: module
Gate current: 70/150mA
Max. forward voltage: 1.36V
Load current: 120A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.8kV
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.8kV; If: 120A; E2-Pack
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Features of semiconductor devices: freewheelling diode
Type of bridge rectifier: half-controlled
Version: module
Gate current: 70/150mA
Max. forward voltage: 1.36V
Load current: 120A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.8kV
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 91.09 EUR |
IXTN110N20L2 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Technology: Linear L2™
Reverse recovery time: 420ns
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Technology: Linear L2™
Reverse recovery time: 420ns
Semiconductor structure: single transistor
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IXTK110N20L2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
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OMA160 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.19 EUR |
23+ | 3.12 EUR |
25+ | 2.95 EUR |
CPC1010N |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1010NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1020NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1019NTR |
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Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Type of relay: solid state
Max. operating current: 750mA
Switched voltage: max. 60V DC
Mounting: SMT
Case: SOP4
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Contacts configuration: SPST-NO
On-state resistance: 0.6Ω
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Type of relay: solid state
Max. operating current: 750mA
Switched voltage: max. 60V DC
Mounting: SMT
Case: SOP4
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Contacts configuration: SPST-NO
On-state resistance: 0.6Ω
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
Produkt ist nicht verfügbar
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Stück im Wert von UAH
CPC1004NTR |
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Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Type of relay: solid state
Max. operating current: 300mA
Switched voltage: max. 100V DC
Mounting: SMT
Case: SOP4
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...110°C
Turn-on time: 3ms
Turn-off time: 1ms
Contacts configuration: SPST-NO
On-state resistance: 4Ω
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Type of relay: solid state
Max. operating current: 300mA
Switched voltage: max. 100V DC
Mounting: SMT
Case: SOP4
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...110°C
Turn-on time: 3ms
Turn-off time: 1ms
Contacts configuration: SPST-NO
On-state resistance: 4Ω
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
Produkt ist nicht verfügbar
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CPC1030NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1006NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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DSEP60-12A |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.81V
Power dissipation: 330W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.81V
Power dissipation: 330W
Reverse recovery time: 40ns
Technology: HiPerFRED™
auf Bestellung 241 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.48 EUR |
8+ | 8.94 EUR |
9+ | 8.45 EUR |
30+ | 8.17 EUR |
DSEP60-12AR | ![]() |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: ISOPLUS247™
Max. forward voltage: 2.66V
Power dissipation: 230W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: ISOPLUS247™
Max. forward voltage: 2.66V
Power dissipation: 230W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1706Y |
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Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 4A
Switched voltage: max. 60V DC
Relay variant: current source
Mounting: THT
Case: SOP4
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 90mΩ
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 4A
Switched voltage: max. 60V DC
Relay variant: current source
Mounting: THT
Case: SOP4
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 90mΩ
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.76 EUR |
IXFP12N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Kind of channel: enhancement
Drain current: 12A
Drain-source voltage: 500V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Kind of channel: enhancement
Drain current: 12A
Drain-source voltage: 500V
Produkt ist nicht verfügbar
Im Einkaufswagen
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MIXG330PF1200PTSF |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: IGBT half-bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: IGBT half-bridge; NTC thermistor
Produkt ist nicht verfügbar
Im Einkaufswagen
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CPC5602CTR |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 586 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
57+ | 1.27 EUR |
82+ | 0.87 EUR |
139+ | 0.52 EUR |
147+ | 0.49 EUR |
VHFD37-16IO1 |
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Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Electrical mounting: FASTON connectors
Version: module
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
Gate current: 50/80mA
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Electrical mounting: FASTON connectors
Version: module
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
Gate current: 50/80mA
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 40.7 EUR |
10+ | 39.04 EUR |
PLA191S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.73 EUR |
16+ | 4.58 EUR |
17+ | 4.32 EUR |
MDMA660U1600PTEH |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Case: E3-Pack
Mechanical mounting: screw
Electrical mounting: Press-Fit
Version: module
Load current: 660A
Max. forward impulse current: 5kA
Max. off-state voltage: 1.6kV
Type of bridge rectifier: three-phase
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Case: E3-Pack
Mechanical mounting: screw
Electrical mounting: Press-Fit
Version: module
Load current: 660A
Max. forward impulse current: 5kA
Max. off-state voltage: 1.6kV
Type of bridge rectifier: three-phase
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 195.2 EUR |
DSEI30-10A | ![]() |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 185A
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 138W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 185A
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 138W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.8 EUR |
17+ | 4.22 EUR |
19+ | 3.83 EUR |
IXFH120N20P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Technology: HiPerFET™; Polar™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Technology: HiPerFET™; Polar™
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.2 EUR |
7+ | 10.9 EUR |
10+ | 10.72 EUR |
20+ | 10.47 EUR |
CPC3701CTR |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.6A
On-state resistance: 1Ω
Power dissipation: 1.1W
Gate-source voltage: ±15V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.6A
On-state resistance: 1Ω
Power dissipation: 1.1W
Gate-source voltage: ±15V
Drain-source voltage: 60V
auf Bestellung 330 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.19 EUR |
89+ | 0.8 EUR |
140+ | 0.51 EUR |
148+ | 0.48 EUR |
IXXH100N60B3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXDN609SI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 1580 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.36 EUR |
32+ | 2.25 EUR |
34+ | 2.13 EUR |
100+ | 2.12 EUR |
200+ | 2.04 EUR |
IXDN609SIA |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.12 EUR |
47+ | 1.54 EUR |
50+ | 1.43 EUR |
53+ | 1.36 EUR |
100+ | 1.32 EUR |
LF2136BTR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Case: SO28
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Case: SO28
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PBA150S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.72 EUR |
11+ | 6.68 EUR |
IXGH10N170A |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Technology: NPT
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Turn-on time: 107ns
Turn-off time: 240ns
Collector current: 5A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Technology: NPT
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Turn-on time: 107ns
Turn-off time: 240ns
Collector current: 5A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTA50N20P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTA50N25T |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTH24N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFA34N65X3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
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IXFH34N65X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
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DSSS35-008AR |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 35Ax2; ISOPLUS247™; 190W
Mounting: THT
Type of diode: Schottky rectifying
Kind of package: tube
Load current: 35A x2
Power dissipation: 190W
Max. forward voltage: 0.68V
Max. forward impulse current: 0.6kA
Semiconductor structure: double series
Case: ISOPLUS247™
Max. off-state voltage: 80V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 35Ax2; ISOPLUS247™; 190W
Mounting: THT
Type of diode: Schottky rectifying
Kind of package: tube
Load current: 35A x2
Power dissipation: 190W
Max. forward voltage: 0.68V
Max. forward impulse current: 0.6kA
Semiconductor structure: double series
Case: ISOPLUS247™
Max. off-state voltage: 80V
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LOC110S |
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Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: photodiode; 3.75kV
Mounting: SMD
Kind of output: photodiode
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: photodiode; 3.75kV
Mounting: SMD
Kind of output: photodiode
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.5 EUR |
35+ | 2.06 EUR |
37+ | 1.94 EUR |
CPC2907B |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Case: PowerSO8
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
On-state resistance: 0.15Ω
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Case: PowerSO8
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
On-state resistance: 0.15Ω
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.47 EUR |
8+ | 9.37 EUR |