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IXTN62N50L IXTN62N50L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9392E61DBF820&compId=IXTN62N50L.pdf?ci_sign=53a17ba4d1e62ccd79aaf2583022167ac9112e55 Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Power dissipation: 800W
Case: SOT227B
On-state resistance: 0.1Ω
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 550nC
Technology: Linear™
Kind of channel: enhancement
Gate-source voltage: ±40V
Pulsed drain current: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 62A
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IXFN64N50P IXFN64N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF92724B3D05820&compId=IXFN64N50P.pdf?ci_sign=745dacaa39587d6945ae1a13a81afae1ffc43c43 description Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 85mΩ
Gate charge: 150nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; Polar™
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DSEI2X30-12B DSEI2X30-12B IXYS DSEI2X30-12B.pdf Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 27Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 27A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 2.2V
Max. forward impulse current: 375A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
3+28.43 EUR
10+28.41 EUR
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DSEI2X30-04C DSEI2X30-04C IXYS DSEI2X3x.pdf Category: Diode modules
Description: Module: diode; double independent; 400V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Load current: 30A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.4V
Max. forward impulse current: 260A
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
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DSEI2X30-06C DSEI2X30-06C IXYS DSEI2X3x.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.4V
Max. forward impulse current: 260A
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
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DSEI2X101-06A DSEI2X101-06A IXYS pVersion=0046&contRep=ZT&docId=E1C04A8FCC4F92F1A6F5005056AB5A8F&compId=DSEI2x101-06A.pdf?ci_sign=09b084b06228819067d2329633b0aef8070e24cb Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 96A x2
Case: SOT227B
Max. forward voltage: 1.25V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 35 Stücke:
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2+35.99 EUR
30+35.19 EUR
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DSEI2X31-12B DSEI2X31-12B IXYS pVersion=0046&contRep=ZT&docId=E1C04A8FCC4FA7F1A6F5005056AB5A8F&compId=DSEI2x31-12B.pdf?ci_sign=c9685214d0330fe8ec9daa3f55f36a38fa1e7e9e description Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 28Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 28A x2
Case: SOT227B
Max. forward voltage: 2.55V
Max. forward impulse current: 210A
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 103 Stücke:
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3+24.75 EUR
10+23.8 EUR
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DSEI2X161-12P DSEI2X161-12P IXYS DSEI2X161-12P.pdf Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 128Ax2; ECO-PAC 2
Max. off-state voltage: 1.2kV
Load current: 128A x2
Semiconductor structure: double independent
Case: ECO-PAC 2
Max. forward voltage: 1.9V
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
auf Bestellung 33 Stücke:
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2+51.52 EUR
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DSEI2X101-06P DSEI2X101-06P IXYS DSEI2X101-06P.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; ECO-PAC 2; THT
Max. off-state voltage: 0.6kV
Load current: 96A x2
Semiconductor structure: double independent
Case: ECO-PAC 2
Max. forward voltage: 1.17V
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
auf Bestellung 25 Stücke:
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3+31.26 EUR
10+30.7 EUR
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DSEI60-06A DSEI60-06A IXYS DSEI60-06A.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 550A; TO247-2; 166W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 0.55kA
Power dissipation: 166W
Technology: FRED
Kind of package: tube
auf Bestellung 432 Stücke:
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8+9.04 EUR
11+6.84 EUR
12+6.45 EUR
270+6.21 EUR
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DSEI20-12A DSEI20-12A IXYS 96501.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 17A; tube; Ifsm: 130A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 17A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.87V
Max. forward impulse current: 130A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 0.64...1.39mm
auf Bestellung 251 Stücke:
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14+5.18 EUR
20+3.6 EUR
22+3.4 EUR
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DSEI60-10A DSEI60-10A IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58CA3054AF872E469&compId=DSEI60-10A.pdf?ci_sign=8762e46d76ad8c4b0191b7d9243f59d3beaf30e4 description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; tube; Ifsm: 500A; TO247-2; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.8V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 276 Stücke:
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9+8.59 EUR
10+7.15 EUR
11+6.76 EUR
120+6.66 EUR
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DSEI12-12A DSEI12-12A IXYS DSEI12-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 242 Stücke:
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16+4.49 EUR
34+2.14 EUR
36+2.03 EUR
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DSEI12-10A DSEI12-10A IXYS Littelfuse-Power-Semiconductors-DSEI12-10A-Datasheet?assetguid=38eae98d-c5a6-4995-9ec9-e84457531251 description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; tube; Ifsm: 75A; TO220AC; 78W; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.7V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 2.29...2.79mm
auf Bestellung 101 Stücke:
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20+3.66 EUR
25+2.92 EUR
35+2.07 EUR
37+1.96 EUR
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DSEI12-06A DSEI12-06A IXYS pVersion=0046&contRep=ZT&docId=E269244771F7DAF1A303005056AB0C4F&compId=DSEI12-06A.pdf?ci_sign=1a0272622fb5d81809dede3e61b8d2bfcae11f38 description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 14A; tube; Ifsm: 100A; TO220AC; 62W
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.5V
Load current: 14A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Power dissipation: 62W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.39mm
Mounting: THT
auf Bestellung 869 Stücke:
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23+3.16 EUR
36+2 EUR
38+1.89 EUR
500+1.82 EUR
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DSEI8-06A DSEI8-06A IXYS Littelfuse-Power-Semiconductors-DSEI8-06A-Datasheet?assetguid=e637c6ed-d932-4130-b9e4-8226a2821674 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50W; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Power dissipation: 50W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 166 Stücke:
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29+2.52 EUR
35+2.07 EUR
46+1.56 EUR
49+1.47 EUR
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DSEI25-06A DSEI25-06A IXYS DSEI25-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 240A; TO220AC; 105W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 25A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.31V
Max. forward impulse current: 0.24kA
Power dissipation: 105W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 87 Stücke:
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28+2.57 EUR
31+2.32 EUR
39+1.84 EUR
41+1.74 EUR
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DSEI2X31-06C DSEI2X31-06C IXYS DSEI2X3x.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.4V
Max. forward impulse current: 260A
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
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DSEI2x161-02P DSEI2x161-02P IXYS media?resourcetype=datasheets&itemid=9f851867-dcfc-451c-a7e2-2d8510ce8b35&filename=littelfuse%2520power%2520semiconductors%2520dsei2x161-02p%2520datasheet.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 165Ax2; ECO-PAC 2
Max. off-state voltage: 200V
Load current: 165A x2
Semiconductor structure: double independent
Case: ECO-PAC 2
Max. forward voltage: 1.2V
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
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DSEI12-12AZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4BD27DDADA0C4&compId=DSEI12-12AZ.pdf?ci_sign=5358b52cb442ba2514b9d055bb3b361c2c373018 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 2.2V
Load current: 11A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 75A
Power dissipation: 78W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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DSEI19-06AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4EAEC92A680C4&compId=DSEI19-06AS.pdf?ci_sign=02ac32560115a5c8a0b0aea851072b727be8131a Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 20A; 35ns; TO263AB; Ufmax: 1.5V; 61W
Case: TO263AB
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 20A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Power dissipation: 61W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Max. off-state voltage: 0.6kV
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IXFB44N100P IXFB44N100P IXYS IXFB44N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
3+28.19 EUR
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IXFB44N100Q3 IXFB44N100Q3 IXYS IXFB44N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 44A; 1560W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.56kW
Case: PLUS264™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 264nC
Kind of package: tube
Kind of channel: enhancement
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IXFR44N50Q IXFR44N50Q IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6CAB820&compId=IXFR44N50Q.pdf?ci_sign=99a97c2b9e5d063cf27fe5a4fef4e55efd7f134a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 313W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 313W
Case: ISOPLUS247™
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 243 Stücke:
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4+22.06 EUR
30+21.88 EUR
120+21.22 EUR
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IXFH44N50P IXFH44N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0758E5260469&compId=IXFK44N50P.pdf?ci_sign=d640f1f4194f9dc2e366fdcc55cc57269a9c0090 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 658W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
auf Bestellung 213 Stücke:
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5+15.03 EUR
7+10.64 EUR
8+10.05 EUR
120+9.67 EUR
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IXFH34N50P3 IXFH34N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF626144CB820&compId=IXFH(Q)34N50P3.pdf?ci_sign=4d56840987701f45cf2d6fe142e03c4c1af1a499 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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IXFN94N50P2 IXFN94N50P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF94851C85C9820&compId=IXFN94N50P2.pdf?ci_sign=b5e82c7c0a663d279bb749f56b7c4afad245c689 Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; Polar2™
Produkt ist nicht verfügbar
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IXFK64N50Q3 IXFK64N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D467BA74859820&compId=IXFK(X)64N50Q3.pdf?ci_sign=d06f282fe71544fead79cd47b45b6394a781ba37 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
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IXFR64N50P IXFR64N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A896A55A6238BF&compId=IXFR64N50P.pdf?ci_sign=be7ff4f5933bda79ef5f873fbe6eaab20ff55239 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 37A; 300W; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 37A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHV™
Produkt ist nicht verfügbar
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IXFR44N50Q3 IXFR44N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6CC1820&compId=IXFR44N50Q3.pdf?ci_sign=ca7c3ddda1e0d4f113690187365893ed7eb3e98e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
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IXFK64N50P IXFK64N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC0CC4CFD77820&compId=IXFK(X)64N50P.pdf?ci_sign=7204ab845ac6e272ad03bd96c6ae51e7d9e2b498 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
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IXTQ44N50P IXTQ44N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13E9820&compId=IXTQ44N50P.pdf?ci_sign=5b6b390d0f88dc2b81c15815714aa839131be972 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXFR64N50Q3 IXFR64N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC5B9820&compId=IXFR64N50Q3.pdf?ci_sign=8e99c16d92cf6ac73b4565740d7fa20ada0ef8e7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFH44N50Q3 IXFH44N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D560EA38423820&compId=IXFH(T)44N50Q3.pdf?ci_sign=8ccaf63b663c6315e8193c688f8a56787789ba3c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFQ34N50P3 IXFQ34N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF626144CB820&compId=IXFH(Q)34N50P3.pdf?ci_sign=4d56840987701f45cf2d6fe142e03c4c1af1a499 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFR44N50P IXFR44N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C95820&compId=IXFR44N50P.pdf?ci_sign=7af93dd52bee59ebe4814ce2e7c1a8e2f92a4efb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT44N50P IXFT44N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0758E5260469&compId=IXFK44N50P.pdf?ci_sign=d640f1f4194f9dc2e366fdcc55cc57269a9c0090 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT44N50Q3 IXFT44N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D560EA38423820&compId=IXFH(T)44N50Q3.pdf?ci_sign=8ccaf63b663c6315e8193c688f8a56787789ba3c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX64N50Q3 IXFX64N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D467BA74859820&compId=IXFK(X)64N50Q3.pdf?ci_sign=d06f282fe71544fead79cd47b45b6394a781ba37 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX74N50P2 IXFX74N50P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4250D9D5B1820&compId=IXFK(X)74N50P2.pdf?ci_sign=900545cffbacfdb90d0d3fdca2cb8f8db5ca12ac Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 74A
Power dissipation: 1.4kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMA30E1800HA DMA30E1800HA IXYS DMA30E1800HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 30A; tube; Ifsm: 370A; TO247-2; 210W
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 370A
Power dissipation: 210W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO247-2
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IXTA80N10T IXTA80N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D406B88E9F9820&compId=IXTA(P)80N10T.pdf?ci_sign=bc8f5f5b020fd346b1d379e0314e69667636f1ab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
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IXTP180N10T IXTP180N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D545772189D820&compId=IXTA(P)180N10T.pdf?ci_sign=95831666b0a60635c5fe5a67c516de81d010b765 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
Produkt ist nicht verfügbar
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IXTA8N50P IXTA8N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF906108C4F8DE27&compId=IXTA8N50P-DTE.pdf?ci_sign=03a321b6c87a5e9fe9d30b74914618328a684eab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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MCMA700P1600CA IXYS Littelfuse-Power-Semiconductors-MCMA700P1600CA-Datasheet?assetguid=57518344-5E3E-45C3-87E9-9D9F6D24E9A7 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 700A; ComPack; screw
Max. off-state voltage: 1.6kV
Semiconductor structure: double series
Case: ComPack
Kind of package: bulk
Type of semiconductor module: thyristor
Load current: 700A
Gate current: 300/400mA
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.41V
Produkt ist nicht verfügbar
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CPC1966B CPC1966B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81F80C7&compId=CPC1966B.pdf?ci_sign=ae60b2a886e2930432cd0111dbf22b9b7492df85 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Mounting: SMT
Case: SO8
Turn-on time: 20µs
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 3A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Operating temperature: -40...85°C
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CPC1966BX8 CPC1966BX8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD820C0C7&compId=CPC1966BX8.pdf?ci_sign=b164c11ac7ea78255fd5e84454b60119b77c10d9 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Mounting: SMT
Case: SO8
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 3A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXFP72N30X3M IXFP72N30X3M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBBF356252B8BF&compId=IXFP72N30X3M.pdf?ci_sign=c24ed5271396762b17975958867f6946686bb2aa pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
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DSA15IM200UC DSA15IM200UC IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C8FD8A880F38BF&compId=DSA15IM200UC.pdf?ci_sign=056317a4f5de6751e61974d806a68417d45989a7 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Mounting: SMD
Case: DPAK
Semiconductor structure: single diode
Max. forward impulse current: 200A
Power dissipation: 75W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 200V
Max. forward voltage: 0.78V
Load current: 15A
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59+1.23 EUR
62+1.16 EUR
500+1.14 EUR
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CPC3710CTR CPC3710CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6D0B7F679D820&compId=CPC3710.pdf?ci_sign=39e865d4d80527d3d359204ffe81ed0050463eee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.22A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 250V
Drain current: 0.22A
On-state resistance: 10Ω
Power dissipation: 1.4W
Kind of channel: depletion
Gate-source voltage: ±15V
Produkt ist nicht verfügbar
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IXGH50N90B2D1 IXGH50N90B2D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A96FD8C4E898BF&compId=IXG_50N90B2D1.pdf?ci_sign=f4cd4c51dbcce9e2ffad27c4bb510a6a965450cf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 48ns
Turn-off time: 820ns
Type of transistor: IGBT
Power dissipation: 400W
Kind of package: tube
Gate charge: 135nC
Technology: GenX3™; HiPerFAST™; PT
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IXGH50N90B2 IXGH50N90B2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAABAECC3241820&compId=IXGH(T)50N90B2.pdf?ci_sign=069ecfae63b9b0cb00f5b2086e78ae27d0bcd488 Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 48ns
Turn-off time: 820ns
Type of transistor: IGBT
Power dissipation: 400W
Kind of package: tube
Gate charge: 135nC
Technology: HiPerFAST™; XPT™
auf Bestellung 170 Stücke:
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10+7.36 EUR
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IXGK50N120C3H1 IXGK50N120C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD2F4A1BC0B820&compId=IXGK(X)50N120C3H1.pdf?ci_sign=61c063dc7fba9e54ef68ca4e62646d9c16039893 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Type of transistor: IGBT
Power dissipation: 460W
Case: TO264
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Produkt ist nicht verfügbar
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IXGX50N120C3H1 IXGX50N120C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD2F4A1BC0B820&compId=IXGK(X)50N120C3H1.pdf?ci_sign=61c063dc7fba9e54ef68ca4e62646d9c16039893 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Mounting: THT
Case: PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 196nC
Technology: GenX3™; PT
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IXGH50N120C3 IXGH50N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD246A67187820&compId=IXGH50N120C3.pdf?ci_sign=38e9870a4fb4296be0a0bbda74474af0275c3fb6 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 250A
Turn-on time: 55ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 196nC
Technology: GenX3™; PT
Produkt ist nicht verfügbar
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IXGH2N250 IXGH2N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFE9F6304CF820&compId=IXGH2N250.pdf?ci_sign=139bab15db439c626267cbd44ebcd44f0138782d Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 2A
Pulsed collector current: 13.5A
Turn-on time: 115ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 32W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 10.5nC
Technology: NPT
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IXGH25N250 IXGH25N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB00DD7512F1820&compId=IXGH25N250.pdf?ci_sign=37672af961a987aa06f6a3c92f025fec780b03e0 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 200A
Turn-on time: 301ns
Turn-off time: 409ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 75nC
Technology: NPT
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IXGK75N250 IXGK75N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB03F9BBFA01820&compId=IXGK75N250.pdf?ci_sign=be8461cff61548ebe11396ab45f12949d639eeef Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Mounting: THT
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 530A
Turn-on time: 280ns
Turn-off time: 725ns
Type of transistor: IGBT
Power dissipation: 780W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 410nC
Technology: NPT
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MWI75-06A7T IXYS Category: IGBT modules
Description: Transistor/transistor; IGBT three-phase bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
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DPG20C400PB DPG20C400PB IXYS media?resourcetype=datasheets&itemid=D7658169-4094-4E23-BDBE-9048A8ED197E&filename=Littelfuse-Power-Semiconductors-DPG20C400PB-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220AB; 65W
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A x2
Semiconductor structure: common cathode; double
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.56 EUR
29+2.49 EUR
31+2.36 EUR
Mindestbestellmenge: 21
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IXTN62N50L pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9392E61DBF820&compId=IXTN62N50L.pdf?ci_sign=53a17ba4d1e62ccd79aaf2583022167ac9112e55
IXTN62N50L
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Power dissipation: 800W
Case: SOT227B
On-state resistance: 0.1Ω
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 550nC
Technology: Linear™
Kind of channel: enhancement
Gate-source voltage: ±40V
Pulsed drain current: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 62A
Produkt ist nicht verfügbar
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IXFN64N50P description pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF92724B3D05820&compId=IXFN64N50P.pdf?ci_sign=745dacaa39587d6945ae1a13a81afae1ffc43c43
IXFN64N50P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 85mΩ
Gate charge: 150nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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DSEI2X30-12B DSEI2X30-12B.pdf
DSEI2X30-12B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 27Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 27A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 2.2V
Max. forward impulse current: 375A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+28.43 EUR
10+28.41 EUR
Mindestbestellmenge: 3
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DSEI2X30-04C DSEI2X3x.pdf
DSEI2X30-04C
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Load current: 30A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.4V
Max. forward impulse current: 260A
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Produkt ist nicht verfügbar
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DSEI2X30-06C DSEI2X3x.pdf
DSEI2X30-06C
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.4V
Max. forward impulse current: 260A
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Produkt ist nicht verfügbar
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DSEI2X101-06A pVersion=0046&contRep=ZT&docId=E1C04A8FCC4F92F1A6F5005056AB5A8F&compId=DSEI2x101-06A.pdf?ci_sign=09b084b06228819067d2329633b0aef8070e24cb
DSEI2X101-06A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 96A x2
Case: SOT227B
Max. forward voltage: 1.25V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.99 EUR
30+35.19 EUR
Mindestbestellmenge: 2
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DSEI2X31-12B description pVersion=0046&contRep=ZT&docId=E1C04A8FCC4FA7F1A6F5005056AB5A8F&compId=DSEI2x31-12B.pdf?ci_sign=c9685214d0330fe8ec9daa3f55f36a38fa1e7e9e
DSEI2X31-12B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 28Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 28A x2
Case: SOT227B
Max. forward voltage: 2.55V
Max. forward impulse current: 210A
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.75 EUR
10+23.8 EUR
Mindestbestellmenge: 3
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DSEI2X161-12P DSEI2X161-12P.pdf
DSEI2X161-12P
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 128Ax2; ECO-PAC 2
Max. off-state voltage: 1.2kV
Load current: 128A x2
Semiconductor structure: double independent
Case: ECO-PAC 2
Max. forward voltage: 1.9V
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+51.52 EUR
Mindestbestellmenge: 2
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DSEI2X101-06P DSEI2X101-06P.pdf
DSEI2X101-06P
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; ECO-PAC 2; THT
Max. off-state voltage: 0.6kV
Load current: 96A x2
Semiconductor structure: double independent
Case: ECO-PAC 2
Max. forward voltage: 1.17V
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+31.26 EUR
10+30.7 EUR
Mindestbestellmenge: 3
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DSEI60-06A description DSEI60-06A.pdf
DSEI60-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 550A; TO247-2; 166W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 0.55kA
Power dissipation: 166W
Technology: FRED
Kind of package: tube
auf Bestellung 432 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.04 EUR
11+6.84 EUR
12+6.45 EUR
270+6.21 EUR
Mindestbestellmenge: 8
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DSEI20-12A description 96501.pdf
DSEI20-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 17A; tube; Ifsm: 130A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 17A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.87V
Max. forward impulse current: 130A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 0.64...1.39mm
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.18 EUR
20+3.6 EUR
22+3.4 EUR
Mindestbestellmenge: 14
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DSEI60-10A description pVersion=0046&contRep=ZT&docId=005056AB752F1EE58CA3054AF872E469&compId=DSEI60-10A.pdf?ci_sign=8762e46d76ad8c4b0191b7d9243f59d3beaf30e4
DSEI60-10A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; tube; Ifsm: 500A; TO247-2; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.8V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.59 EUR
10+7.15 EUR
11+6.76 EUR
120+6.66 EUR
Mindestbestellmenge: 9
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DSEI12-12A DSEI12-12A.pdf
DSEI12-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.49 EUR
34+2.14 EUR
36+2.03 EUR
Mindestbestellmenge: 16
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DSEI12-10A description Littelfuse-Power-Semiconductors-DSEI12-10A-Datasheet?assetguid=38eae98d-c5a6-4995-9ec9-e84457531251
DSEI12-10A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; tube; Ifsm: 75A; TO220AC; 78W; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.7V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 2.29...2.79mm
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.66 EUR
25+2.92 EUR
35+2.07 EUR
37+1.96 EUR
Mindestbestellmenge: 20
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DSEI12-06A description pVersion=0046&contRep=ZT&docId=E269244771F7DAF1A303005056AB0C4F&compId=DSEI12-06A.pdf?ci_sign=1a0272622fb5d81809dede3e61b8d2bfcae11f38
DSEI12-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 14A; tube; Ifsm: 100A; TO220AC; 62W
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.5V
Load current: 14A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Power dissipation: 62W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.39mm
Mounting: THT
auf Bestellung 869 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.16 EUR
36+2 EUR
38+1.89 EUR
500+1.82 EUR
Mindestbestellmenge: 23
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DSEI8-06A Littelfuse-Power-Semiconductors-DSEI8-06A-Datasheet?assetguid=e637c6ed-d932-4130-b9e4-8226a2821674
DSEI8-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50W; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Power dissipation: 50W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.52 EUR
35+2.07 EUR
46+1.56 EUR
49+1.47 EUR
Mindestbestellmenge: 29
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DSEI25-06A DSEI25-06A.pdf
DSEI25-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 240A; TO220AC; 105W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 25A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.31V
Max. forward impulse current: 0.24kA
Power dissipation: 105W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
31+2.32 EUR
39+1.84 EUR
41+1.74 EUR
Mindestbestellmenge: 28
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DSEI2X31-06C DSEI2X3x.pdf
DSEI2X31-06C
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.4V
Max. forward impulse current: 260A
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Produkt ist nicht verfügbar
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DSEI2x161-02P media?resourcetype=datasheets&itemid=9f851867-dcfc-451c-a7e2-2d8510ce8b35&filename=littelfuse%2520power%2520semiconductors%2520dsei2x161-02p%2520datasheet.pdf
DSEI2x161-02P
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 165Ax2; ECO-PAC 2
Max. off-state voltage: 200V
Load current: 165A x2
Semiconductor structure: double independent
Case: ECO-PAC 2
Max. forward voltage: 1.2V
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
Produkt ist nicht verfügbar
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DSEI12-12AZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4BD27DDADA0C4&compId=DSEI12-12AZ.pdf?ci_sign=5358b52cb442ba2514b9d055bb3b361c2c373018
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 2.2V
Load current: 11A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 75A
Power dissipation: 78W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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DSEI19-06AS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4EAEC92A680C4&compId=DSEI19-06AS.pdf?ci_sign=02ac32560115a5c8a0b0aea851072b727be8131a
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 20A; 35ns; TO263AB; Ufmax: 1.5V; 61W
Case: TO263AB
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 20A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Power dissipation: 61W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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IXFB44N100P IXFB44N100P.pdf
IXFB44N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+28.19 EUR
Mindestbestellmenge: 3
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IXFB44N100Q3 IXFB44N100Q3.pdf
IXFB44N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 44A; 1560W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.56kW
Case: PLUS264™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 264nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFR44N50Q pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6CAB820&compId=IXFR44N50Q.pdf?ci_sign=99a97c2b9e5d063cf27fe5a4fef4e55efd7f134a
IXFR44N50Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 313W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 313W
Case: ISOPLUS247™
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+22.06 EUR
30+21.88 EUR
120+21.22 EUR
Mindestbestellmenge: 4
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IXFH44N50P description pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0758E5260469&compId=IXFK44N50P.pdf?ci_sign=d640f1f4194f9dc2e366fdcc55cc57269a9c0090
IXFH44N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 658W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
auf Bestellung 213 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.03 EUR
7+10.64 EUR
8+10.05 EUR
120+9.67 EUR
Mindestbestellmenge: 5
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IXFH34N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF626144CB820&compId=IXFH(Q)34N50P3.pdf?ci_sign=4d56840987701f45cf2d6fe142e03c4c1af1a499
IXFH34N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFN94N50P2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF94851C85C9820&compId=IXFN94N50P2.pdf?ci_sign=b5e82c7c0a663d279bb749f56b7c4afad245c689
IXFN94N50P2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; Polar2™
Produkt ist nicht verfügbar
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IXFK64N50Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D467BA74859820&compId=IXFK(X)64N50Q3.pdf?ci_sign=d06f282fe71544fead79cd47b45b6394a781ba37
IXFK64N50Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFR64N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A896A55A6238BF&compId=IXFR64N50P.pdf?ci_sign=be7ff4f5933bda79ef5f873fbe6eaab20ff55239
IXFR64N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 37A; 300W; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 37A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHV™
Produkt ist nicht verfügbar
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IXFR44N50Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6CC1820&compId=IXFR44N50Q3.pdf?ci_sign=ca7c3ddda1e0d4f113690187365893ed7eb3e98e
IXFR44N50Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK64N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC0CC4CFD77820&compId=IXFK(X)64N50P.pdf?ci_sign=7204ab845ac6e272ad03bd96c6ae51e7d9e2b498
IXFK64N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTQ44N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13E9820&compId=IXTQ44N50P.pdf?ci_sign=5b6b390d0f88dc2b81c15815714aa839131be972
IXTQ44N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXFR64N50Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC5B9820&compId=IXFR64N50Q3.pdf?ci_sign=8e99c16d92cf6ac73b4565740d7fa20ada0ef8e7
IXFR64N50Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFH44N50Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D560EA38423820&compId=IXFH(T)44N50Q3.pdf?ci_sign=8ccaf63b663c6315e8193c688f8a56787789ba3c
IXFH44N50Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFQ34N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF626144CB820&compId=IXFH(Q)34N50P3.pdf?ci_sign=4d56840987701f45cf2d6fe142e03c4c1af1a499
IXFQ34N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFR44N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C95820&compId=IXFR44N50P.pdf?ci_sign=7af93dd52bee59ebe4814ce2e7c1a8e2f92a4efb
IXFR44N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT44N50P pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0758E5260469&compId=IXFK44N50P.pdf?ci_sign=d640f1f4194f9dc2e366fdcc55cc57269a9c0090
IXFT44N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT44N50Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D560EA38423820&compId=IXFH(T)44N50Q3.pdf?ci_sign=8ccaf63b663c6315e8193c688f8a56787789ba3c
IXFT44N50Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX64N50Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D467BA74859820&compId=IXFK(X)64N50Q3.pdf?ci_sign=d06f282fe71544fead79cd47b45b6394a781ba37
IXFX64N50Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX74N50P2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4250D9D5B1820&compId=IXFK(X)74N50P2.pdf?ci_sign=900545cffbacfdb90d0d3fdca2cb8f8db5ca12ac
IXFX74N50P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 74A
Power dissipation: 1.4kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMA30E1800HA DMA30E1800HA.pdf
DMA30E1800HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 30A; tube; Ifsm: 370A; TO247-2; 210W
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 370A
Power dissipation: 210W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO247-2
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.43 EUR
21+3.47 EUR
22+3.29 EUR
30+3.2 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXTA80N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D406B88E9F9820&compId=IXTA(P)80N10T.pdf?ci_sign=bc8f5f5b020fd346b1d379e0314e69667636f1ab
IXTA80N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
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IXTP180N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D545772189D820&compId=IXTA(P)180N10T.pdf?ci_sign=95831666b0a60635c5fe5a67c516de81d010b765
IXTP180N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
Produkt ist nicht verfügbar
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IXTA8N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF906108C4F8DE27&compId=IXTA8N50P-DTE.pdf?ci_sign=03a321b6c87a5e9fe9d30b74914618328a684eab
IXTA8N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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MCMA700P1600CA Littelfuse-Power-Semiconductors-MCMA700P1600CA-Datasheet?assetguid=57518344-5E3E-45C3-87E9-9D9F6D24E9A7
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 700A; ComPack; screw
Max. off-state voltage: 1.6kV
Semiconductor structure: double series
Case: ComPack
Kind of package: bulk
Type of semiconductor module: thyristor
Load current: 700A
Gate current: 300/400mA
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.41V
Produkt ist nicht verfügbar
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CPC1966B pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81F80C7&compId=CPC1966B.pdf?ci_sign=ae60b2a886e2930432cd0111dbf22b9b7492df85
CPC1966B
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Mounting: SMT
Case: SO8
Turn-on time: 20µs
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 3A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1966BX8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD820C0C7&compId=CPC1966BX8.pdf?ci_sign=b164c11ac7ea78255fd5e84454b60119b77c10d9
CPC1966BX8
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Mounting: SMT
Case: SO8
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 3A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXFP72N30X3M pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBBF356252B8BF&compId=IXFP72N30X3M.pdf?ci_sign=c24ed5271396762b17975958867f6946686bb2aa pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFP72N30X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
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DSA15IM200UC pVersion=0046&contRep=ZT&docId=005056AB82531EE991C8FD8A880F38BF&compId=DSA15IM200UC.pdf?ci_sign=056317a4f5de6751e61974d806a68417d45989a7
DSA15IM200UC
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Mounting: SMD
Case: DPAK
Semiconductor structure: single diode
Max. forward impulse current: 200A
Power dissipation: 75W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 200V
Max. forward voltage: 0.78V
Load current: 15A
auf Bestellung 2192 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
47+1.54 EUR
59+1.23 EUR
62+1.16 EUR
500+1.14 EUR
Mindestbestellmenge: 36
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CPC3710CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6D0B7F679D820&compId=CPC3710.pdf?ci_sign=39e865d4d80527d3d359204ffe81ed0050463eee
CPC3710CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.22A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 250V
Drain current: 0.22A
On-state resistance: 10Ω
Power dissipation: 1.4W
Kind of channel: depletion
Gate-source voltage: ±15V
Produkt ist nicht verfügbar
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IXGH50N90B2D1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A96FD8C4E898BF&compId=IXG_50N90B2D1.pdf?ci_sign=f4cd4c51dbcce9e2ffad27c4bb510a6a965450cf
IXGH50N90B2D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 48ns
Turn-off time: 820ns
Type of transistor: IGBT
Power dissipation: 400W
Kind of package: tube
Gate charge: 135nC
Technology: GenX3™; HiPerFAST™; PT
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.48 EUR
8+9.14 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXGH50N90B2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAABAECC3241820&compId=IXGH(T)50N90B2.pdf?ci_sign=069ecfae63b9b0cb00f5b2086e78ae27d0bcd488
IXGH50N90B2
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 48ns
Turn-off time: 820ns
Type of transistor: IGBT
Power dissipation: 400W
Kind of package: tube
Gate charge: 135nC
Technology: HiPerFAST™; XPT™
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.87 EUR
10+7.36 EUR
Mindestbestellmenge: 7
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IXGK50N120C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD2F4A1BC0B820&compId=IXGK(X)50N120C3H1.pdf?ci_sign=61c063dc7fba9e54ef68ca4e62646d9c16039893
IXGK50N120C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Type of transistor: IGBT
Power dissipation: 460W
Case: TO264
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Produkt ist nicht verfügbar
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IXGX50N120C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD2F4A1BC0B820&compId=IXGK(X)50N120C3H1.pdf?ci_sign=61c063dc7fba9e54ef68ca4e62646d9c16039893
IXGX50N120C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Mounting: THT
Case: PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 196nC
Technology: GenX3™; PT
Produkt ist nicht verfügbar
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IXGH50N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD246A67187820&compId=IXGH50N120C3.pdf?ci_sign=38e9870a4fb4296be0a0bbda74474af0275c3fb6
IXGH50N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 250A
Turn-on time: 55ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 196nC
Technology: GenX3™; PT
Produkt ist nicht verfügbar
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IXGH2N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFE9F6304CF820&compId=IXGH2N250.pdf?ci_sign=139bab15db439c626267cbd44ebcd44f0138782d
IXGH2N250
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 2A
Pulsed collector current: 13.5A
Turn-on time: 115ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 32W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 10.5nC
Technology: NPT
Produkt ist nicht verfügbar
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IXGH25N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB00DD7512F1820&compId=IXGH25N250.pdf?ci_sign=37672af961a987aa06f6a3c92f025fec780b03e0
IXGH25N250
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 200A
Turn-on time: 301ns
Turn-off time: 409ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 75nC
Technology: NPT
Produkt ist nicht verfügbar
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IXGK75N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB03F9BBFA01820&compId=IXGK75N250.pdf?ci_sign=be8461cff61548ebe11396ab45f12949d639eeef
IXGK75N250
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Mounting: THT
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 530A
Turn-on time: 280ns
Turn-off time: 725ns
Type of transistor: IGBT
Power dissipation: 780W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 410nC
Technology: NPT
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MWI75-06A7T
Hersteller: IXYS
Category: IGBT modules
Description: Transistor/transistor; IGBT three-phase bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
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DPG20C400PB media?resourcetype=datasheets&itemid=D7658169-4094-4E23-BDBE-9048A8ED197E&filename=Littelfuse-Power-Semiconductors-DPG20C400PB-Datasheet
DPG20C400PB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220AB; 65W
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A x2
Semiconductor structure: common cathode; double
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.56 EUR
29+2.49 EUR
31+2.36 EUR
Mindestbestellmenge: 21
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