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DSEP30-06A DSEP30-06A IXYS DSEP30-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-2
Max. forward voltage: 1.25V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
auf Bestellung 120 Stücke:
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12+6.42 EUR
17+4.38 EUR
18+4.13 EUR
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DSEE30-12A DSEE30-12A IXYS DSEE30-12A.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.5V
Load current: 30A
Semiconductor structure: double series
Reverse recovery time: 30ns
Max. forward impulse current: 200A
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
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IXFT320N10T2 IXFT320N10T2 IXYS IXFH(T)320N10T2.pdf IXFT320N10T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 98ns
Features of semiconductor devices: thrench gate power mosfet
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IXFP7N100P IXFP7N100P IXYS IXF_7N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Mounting: THT
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 7A
On-state resistance: 1.9Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 47nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO220AB
auf Bestellung 230 Stücke:
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12+6.29 EUR
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16+4.73 EUR
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DSEI2X61-12B DSEI2X61-12B IXYS DSEI2x61-12B.pdf description Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 52Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.5V
Load current: 52A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
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DSEP60-06A DSEP60-06A IXYS DSEP60-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 600A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.39V
Max. forward impulse current: 0.6kA
Power dissipation: 330W
Technology: HiPerFRED™
Kind of package: tube
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IXFN170N30P IXFN170N30P IXYS IXFN170N30P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 138A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 138A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 18mΩ
Pulsed drain current: 500A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 258nC
Kind of channel: enhancement
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IXTK32P60P IXTK32P60P IXYS IXTK32P60P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264
On-state resistance: 0.35Ω
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO264
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
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IXGK320N60B3 IXGK320N60B3 IXYS IXGK(x)320N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 1.7kW
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 585nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 320A
Pulsed collector current: 1.2kA
Turn-on time: 107ns
Turn-off time: 595ns
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IXFH320N10T2 IXFH320N10T2 IXYS IXFH(T)320N10T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 98ns
Features of semiconductor devices: thrench gate power mosfet
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IXYA8N90C3D1 IXYA8N90C3D1 IXYS IXYA(P)8N90C3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Pulsed collector current: 48A
Collector current: 8A
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Turn-on time: 39ns
Gate-emitter voltage: ±20V
Turn-off time: 238ns
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IXTP44N10T IXTP44N10T IXYS IXTP(Y)44N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Drain-source voltage: 100V
Drain current: 44A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 30mΩ
Power dissipation: 130W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Kind of channel: enhancement
Mounting: THT
Reverse recovery time: 60ns
Type of transistor: N-MOSFET
auf Bestellung 176 Stücke:
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36+1.99 EUR
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PLA134 PLA134 IXYS PLA134.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Case: DIP6
On-state resistance: 3Ω
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 350mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
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IXFN420N10T IXFN420N10T IXYS IXFN420N10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.3mΩ
Gate charge: 670nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 140ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: GigaMOS™; HiPerFET™
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IXTY08N100D2 IXTY08N100D2 IXYS IXTA(P,Y)08N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depletion
auf Bestellung 210 Stücke:
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IXTP100N04T2 IXTP100N04T2 IXYS IXTA(P)100N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of channel: enhancement
Case: TO220AB
Reverse recovery time: 34ns
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
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41+1.76 EUR
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NCD2400MTR IXYS NCD2400M.pdf Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Type of integrated circuit: digital capacitor
Interface: 2-wire; I2C
Kind of memory: EEPROM; non-volatile
Case: DFN6
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.5...5.5V
Application: for OCXO application
Capacitance: 1.7...203pF
Number of positions: 512
Integrated circuit features: programmable
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CPC3909CTR CPC3909CTR IXYS CPC3909.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89
Mounting: SMD
Drain-source voltage: 400V
Drain current: 0.3A
On-state resistance: 9Ω
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Case: SOT89
Produkt ist nicht verfügbar
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VUB72-12NOXT VUB72-12NOXT IXYS VUB72-12NOXT.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: V1-A-Pack
Application: Inverter
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Power dissipation: 195W
Mechanical mounting: screw
auf Bestellung 18 Stücke:
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IXTT16P60P IXTT16P60P IXYS IXT_16P60P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO268
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -16A
Power dissipation: 460W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 440ns
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IXFR48N60P IXFR48N60P IXYS IXFR48N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
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IXFP34N65X2M IXFP34N65X2M IXYS IXFP34N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Reverse recovery time: 164ns
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IXTQ130N20T IXTQ130N20T IXYS IXTQ130N20T_IXTH130N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Power dissipation: 830W
Case: TO3P
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
Pulsed drain current: 320A
Technology: Trench™
Gate-source voltage: ±20V
auf Bestellung 11 Stücke:
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9+8.18 EUR
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IXFR230N20T IXFR230N20T IXYS IXFR230N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 156A; 600W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 156A
Power dissipation: 600W
Case: ISOPLUS247™
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 358nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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CPC40055ST CPC40055ST IXYS CPC40055ST.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 5000mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 38.1x17.78x3.8mm
Insulation voltage: 2.5kV
Switching method: zero voltage switching
Max. operating current: 5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Mounting: THT
Case: SIP
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IXTY2N65X2 IXTY2N65X2 IXYS IXTP(Y)2N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
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IXFH26N60P IXFH26N60P IXYS IXFH26N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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7+11.33 EUR
9+8.12 EUR
10+7.68 EUR
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IXFN100N50Q3 IXFN100N50Q3 IXYS IXFN100N50Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 82A; SOT227B; screw; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 82A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 300A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhancement
Gate charge: 255nC
Reverse recovery time: 250ns
Gate-source voltage: ±40V
Mechanical mounting: screw
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IXDD609SIA IXDD609SIA IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 403 Stücke:
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IXDD609SI IXDD609SI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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30+2.45 EUR
31+2.32 EUR
300+2.25 EUR
500+2.23 EUR
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IXDD609SIATR IXDD609SIATR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDD609SITR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDN614YI IXDN614YI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
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IXDD604SIA IXDD604SIA IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 754 Stücke:
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CS30-12IO1 CS30-12IO1 IXYS CS30-12IO1-DTE.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of thyristor: thyristor
Case: TO247AD
auf Bestellung 273 Stücke:
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CPC1117NTR CPC1117NTR IXYS CPC1117N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXDD604SIATR IXDD604SIATR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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IXFK64N60P3 IXFK64N60P3 IXYS IXF_64N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
auf Bestellung 296 Stücke:
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CPC1788J CPC1788J IXYS CPC1788.pdf Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Switched voltage: max. 1kV DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 1.25Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 2.5kV
Control current max.: 100mA
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
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CPC1708J CPC1708J IXYS CPC1708.pdf Category: DC Solid State Relays
Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; OptoMOS; 0.08Ω
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 5350mA
Switched voltage: max. 60V DC
Relay variant: current source
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 20ms
On-state resistance: 80mΩ
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
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CPC1511Y CPC1511Y IXYS CPC1511.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 450mA; max.230VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 450mA
Switched voltage: max. 230V AC; max. 230V DC
Relay variant: 1-phase; current source
On-state resistance: 4Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 3.75kV
Control current max.: 50mA
Turn-on time: 4ms
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
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PLB171P PLB171P IXYS PLB171.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 5kV
Control current max.: 50mA
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.16mm
auf Bestellung 72 Stücke:
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DSP25-12A DSP25-12A IXYS DSP25-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.16V
Load current: 25A
Semiconductor structure: double series
Max. forward impulse current: 0.3kA
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
auf Bestellung 286 Stücke:
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IXFK64N60P IXFK64N60P IXYS IXFK(X)64N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1040W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 64A
On-state resistance: 96mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 200nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFH180N20X3 IXFH180N20X3 IXYS IXF_180N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Reverse recovery time: 94ns
Drain-source voltage: 200V
Drain current: 180A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Kind of package: tube
Gate charge: 154nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
auf Bestellung 22 Stücke:
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CLA110MB1200NA CLA110MB1200NA IXYS CLA110MB1200NA.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT227B
Max. forward voltage: 1.04V
Max. forward impulse current: 935A
Gate current: 40/80mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 83 Stücke:
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IXFX44N80Q3 IXFX44N80Q3 IXYS IXFK(X)44N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DSEK60-02AR DSEK60-02AR IXYS L124.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: ISOPLUS247™
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Produkt ist nicht verfügbar
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DSEK60-02A DSEK60-02A IXYS L124.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-3
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
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9+7.99 EUR
13+5.72 EUR
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IXYH40N90C3D1 IXYH40N90C3D1 IXYS IXYH40N90C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Case: TO247-3
Mounting: THT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 180A
Turn-on time: 81ns
Turn-off time: 237ns
Type of transistor: IGBT
Power dissipation: 500W
Kind of package: tube
Gate charge: 74nC
Technology: GenX3™; Planar; XPT™
auf Bestellung 156 Stücke:
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IXFX150N30P3 IXFX150N30P3 IXYS IXFK(X)150N30P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MIXG300PF1700TSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 315A
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXGN400N60A3 IXGN400N60A3 IXYS IXGN400N60A3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 190A
Pulsed collector current: 800A
Power dissipation: 830W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Produkt ist nicht verfügbar
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DPG120C300QB DPG120C300QB IXYS Littelfuse-Power-Semiconductors-DPG120C300QB-Datasheet?assetguid=A5371395-F911-4F4E-8C71-3DC160C40938 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 60Ax2; tube; Ifsm: 450A; TO3P; 275W
Max. off-state voltage: 300V
Max. forward voltage: 1.4V
Load current: 60A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.45kA
Power dissipation: 275W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO3P
auf Bestellung 26 Stücke:
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6+12.73 EUR
8+9.12 EUR
9+8.62 EUR
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IXFP18N65X2M IXFP18N65X2M IXYS IXFP18N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
Produkt ist nicht verfügbar
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IXFA18N65X2 IXFA18N65X2 IXYS IXF_18N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
Produkt ist nicht verfügbar
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IXFP18N65X2 IXFP18N65X2 IXYS IXF_18N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
Produkt ist nicht verfügbar
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IXFH18N65X2 IXFH18N65X2 IXYS IXF_18N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
Produkt ist nicht verfügbar
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DSEP2X91-03A DSEP2X91-03A IXYS DSEP2X91-03A-DTE.pdf description Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Semiconductor structure: double independent
Max. forward impulse current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Technology: HiPerFRED™
Case: SOT227B
Max. off-state voltage: 300V
Max. forward voltage: 1.54V
Load current: 90A x2
auf Bestellung 90 Stücke:
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2+43.20 EUR
30+42.80 EUR
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CS45-16IO1 CS45-16IO1 IXYS CS45-08IO1-DTE.pdf CS45-16IO1.pdf description Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
auf Bestellung 457 Stücke:
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10+7.94 EUR
13+5.69 EUR
14+5.38 EUR
120+5.29 EUR
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DSEP30-06A DSEP30-06A.pdf
DSEP30-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-2
Max. forward voltage: 1.25V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
auf Bestellung 120 Stücke:
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Anzahl Preis
12+6.42 EUR
17+4.38 EUR
18+4.13 EUR
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DSEE30-12A DSEE30-12A.PDF
DSEE30-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.5V
Load current: 30A
Semiconductor structure: double series
Reverse recovery time: 30ns
Max. forward impulse current: 200A
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.69 EUR
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IXFT320N10T2 IXFH(T)320N10T2.pdf IXFT320N10T2.pdf
IXFT320N10T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 98ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFP7N100P IXF_7N100P.pdf
IXFP7N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Mounting: THT
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 7A
On-state resistance: 1.9Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 47nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO220AB
auf Bestellung 230 Stücke:
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Anzahl Preis
12+6.29 EUR
13+5.56 EUR
15+5.00 EUR
16+4.73 EUR
50+4.66 EUR
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DSEI2X61-12B description DSEI2x61-12B.pdf
DSEI2X61-12B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 52Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.5V
Load current: 52A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
auf Bestellung 252 Stücke:
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3+32.89 EUR
100+31.63 EUR
Mindestbestellmenge: 3
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DSEP60-06A DSEP60-06A.pdf
DSEP60-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 600A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.39V
Max. forward impulse current: 0.6kA
Power dissipation: 330W
Technology: HiPerFRED™
Kind of package: tube
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.34 EUR
10+7.28 EUR
11+6.88 EUR
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IXFN170N30P IXFN170N30P.pdf
IXFN170N30P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 138A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 138A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 18mΩ
Pulsed drain current: 500A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 258nC
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+46.58 EUR
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IXTK32P60P IXTK32P60P.pdf
IXTK32P60P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264
On-state resistance: 0.35Ω
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO264
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
auf Bestellung 283 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.96 EUR
25+19.29 EUR
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IXGK320N60B3 IXGK(x)320N60B3.pdf
IXGK320N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 1.7kW
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 585nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 320A
Pulsed collector current: 1.2kA
Turn-on time: 107ns
Turn-off time: 595ns
Produkt ist nicht verfügbar
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IXFH320N10T2 IXFH(T)320N10T2.pdf
IXFH320N10T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 98ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXYA8N90C3D1 IXYA(P)8N90C3D1.pdf
IXYA8N90C3D1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Pulsed collector current: 48A
Collector current: 8A
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Turn-on time: 39ns
Gate-emitter voltage: ±20V
Turn-off time: 238ns
Produkt ist nicht verfügbar
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IXTP44N10T IXTP(Y)44N10T.pdf
IXTP44N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Drain-source voltage: 100V
Drain current: 44A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 30mΩ
Power dissipation: 130W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Kind of channel: enhancement
Mounting: THT
Reverse recovery time: 60ns
Type of transistor: N-MOSFET
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
36+1.99 EUR
57+1.27 EUR
60+1.20 EUR
Mindestbestellmenge: 28
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PLA134 PLA134.pdf
PLA134
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Case: DIP6
On-state resistance: 3Ω
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 350mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+26.21 EUR
6+12.56 EUR
7+11.87 EUR
Mindestbestellmenge: 3
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IXFN420N10T IXFN420N10T.pdf
IXFN420N10T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.3mΩ
Gate charge: 670nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 140ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: GigaMOS™; HiPerFET™
Produkt ist nicht verfügbar
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IXTY08N100D2 IXTA(P,Y)08N100D2.pdf
IXTY08N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depletion
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.30 EUR
19+3.88 EUR
24+3.09 EUR
25+2.92 EUR
Mindestbestellmenge: 17
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IXTP100N04T2 IXTA(P)100N04T2.pdf
IXTP100N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of channel: enhancement
Case: TO220AB
Reverse recovery time: 34ns
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.47 EUR
41+1.76 EUR
44+1.66 EUR
Mindestbestellmenge: 21
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NCD2400MTR NCD2400M.pdf
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Type of integrated circuit: digital capacitor
Interface: 2-wire; I2C
Kind of memory: EEPROM; non-volatile
Case: DFN6
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.5...5.5V
Application: for OCXO application
Capacitance: 1.7...203pF
Number of positions: 512
Integrated circuit features: programmable
Produkt ist nicht verfügbar
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CPC3909CTR CPC3909.pdf
CPC3909CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89
Mounting: SMD
Drain-source voltage: 400V
Drain current: 0.3A
On-state resistance: 9Ω
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Case: SOT89
Produkt ist nicht verfügbar
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VUB72-12NOXT VUB72-12NOXT.pdf
VUB72-12NOXT
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: V1-A-Pack
Application: Inverter
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Power dissipation: 195W
Mechanical mounting: screw
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+48.56 EUR
Mindestbestellmenge: 2
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IXTT16P60P IXT_16P60P.pdf
IXTT16P60P
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO268
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -16A
Power dissipation: 460W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 440ns
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.13 EUR
6+12.40 EUR
7+11.71 EUR
Mindestbestellmenge: 4
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IXFR48N60P IXFR48N60P.pdf
IXFR48N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFP34N65X2M IXFP34N65X2M.pdf
IXFP34N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Reverse recovery time: 164ns
Produkt ist nicht verfügbar
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IXTQ130N20T IXTQ130N20T_IXTH130N20T.pdf
IXTQ130N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Power dissipation: 830W
Case: TO3P
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
Pulsed drain current: 320A
Technology: Trench™
Gate-source voltage: ±20V
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.41 EUR
9+8.18 EUR
10+7.74 EUR
Mindestbestellmenge: 7
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IXFR230N20T IXFR230N20T.pdf
IXFR230N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 156A; 600W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 156A
Power dissipation: 600W
Case: ISOPLUS247™
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 358nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.05 EUR
Mindestbestellmenge: 3
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CPC40055ST CPC40055ST.pdf
CPC40055ST
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 5000mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 38.1x17.78x3.8mm
Insulation voltage: 2.5kV
Switching method: zero voltage switching
Max. operating current: 5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Mounting: THT
Case: SIP
Produkt ist nicht verfügbar
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IXTY2N65X2 IXTP(Y)2N65X2.pdf
IXTY2N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
Produkt ist nicht verfügbar
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IXFH26N60P IXFH26N60P.pdf
IXFH26N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.33 EUR
9+8.12 EUR
10+7.68 EUR
Mindestbestellmenge: 7
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IXFN100N50Q3 IXFN100N50Q3.pdf
IXFN100N50Q3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 82A; SOT227B; screw; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 82A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 300A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhancement
Gate charge: 255nC
Reverse recovery time: 250ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXDD609SIA IXDD609CI.pdf
IXDD609SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 403 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.63 EUR
37+1.97 EUR
50+1.46 EUR
53+1.37 EUR
Mindestbestellmenge: 20
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IXDD609SI IXDD609CI.pdf
IXDD609SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 799 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.63 EUR
30+2.45 EUR
31+2.32 EUR
300+2.25 EUR
500+2.23 EUR
Mindestbestellmenge: 20
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IXDD609SIATR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
IXDD609SIATR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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IXDD609SITR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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IXDN614YI IXDD614CI-DTE.pdf
IXDN614YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 188 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.65 EUR
16+4.48 EUR
Mindestbestellmenge: 13
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IXDD604SIA IXDD604PI.pdf
IXDD604SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 754 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.32 EUR
36+2.00 EUR
47+1.54 EUR
50+1.46 EUR
100+1.42 EUR
Mindestbestellmenge: 31
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CS30-12IO1 CS30-12IO1-DTE.pdf
CS30-12IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of thyristor: thyristor
Case: TO247AD
auf Bestellung 273 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.89 EUR
15+5.02 EUR
16+4.73 EUR
Mindestbestellmenge: 10
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CPC1117NTR CPC1117N.pdf
CPC1117NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXDD604SIATR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
IXDD604SIATR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXFK64N60P3 IXF_64N60P3.pdf
IXFK64N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
auf Bestellung 296 Stücke:
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5+16.30 EUR
6+13.38 EUR
100+13.20 EUR
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CPC1788J CPC1788.pdf
CPC1788J
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Switched voltage: max. 1kV DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 1.25Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 2.5kV
Control current max.: 100mA
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
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5+17.72 EUR
8+9.44 EUR
9+8.92 EUR
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CPC1708J CPC1708.pdf
CPC1708J
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; OptoMOS; 0.08Ω
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 5350mA
Switched voltage: max. 60V DC
Relay variant: current source
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 20ms
On-state resistance: 80mΩ
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
auf Bestellung 170 Stücke:
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8+9.50 EUR
12+6.25 EUR
13+5.91 EUR
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CPC1511Y CPC1511.pdf
CPC1511Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 450mA; max.230VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 450mA
Switched voltage: max. 230V AC; max. 230V DC
Relay variant: 1-phase; current source
On-state resistance: 4Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 3.75kV
Control current max.: 50mA
Turn-on time: 4ms
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
auf Bestellung 212 Stücke:
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Anzahl Preis
11+6.54 EUR
15+4.89 EUR
16+4.62 EUR
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PLB171P PLB171.pdf
PLB171P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 5kV
Control current max.: 50mA
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.16mm
auf Bestellung 72 Stücke:
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Anzahl Preis
9+8.21 EUR
14+5.36 EUR
15+5.06 EUR
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DSP25-12A DSP25-12A.pdf
DSP25-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.16V
Load current: 25A
Semiconductor structure: double series
Max. forward impulse current: 0.3kA
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
auf Bestellung 286 Stücke:
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Anzahl Preis
12+6.29 EUR
15+4.80 EUR
16+4.55 EUR
120+4.38 EUR
Mindestbestellmenge: 12
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IXFK64N60P IXFK(X)64N60P.pdf
IXFK64N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1040W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 64A
On-state resistance: 96mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 200nC
Kind of channel: enhancement
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IXFH180N20X3 IXF_180N20X3_HV.pdf 200VProductBrief.pdf
IXFH180N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Reverse recovery time: 94ns
Drain-source voltage: 200V
Drain current: 180A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Kind of package: tube
Gate charge: 154nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
auf Bestellung 22 Stücke:
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Anzahl Preis
4+19.23 EUR
5+14.70 EUR
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CLA110MB1200NA CLA110MB1200NA.pdf
CLA110MB1200NA
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT227B
Max. forward voltage: 1.04V
Max. forward impulse current: 935A
Gate current: 40/80mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 83 Stücke:
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Anzahl Preis
3+25.14 EUR
10+24.17 EUR
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IXFX44N80Q3 IXFK(X)44N80Q3.pdf
IXFX44N80Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
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DSEK60-02AR L124.pdf
DSEK60-02AR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: ISOPLUS247™
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
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DSEK60-02A L124.pdf
DSEK60-02A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-3
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.99 EUR
13+5.72 EUR
14+5.41 EUR
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IXYH40N90C3D1 IXYH40N90C3D1.pdf
IXYH40N90C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Case: TO247-3
Mounting: THT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 180A
Turn-on time: 81ns
Turn-off time: 237ns
Type of transistor: IGBT
Power dissipation: 500W
Kind of package: tube
Gate charge: 74nC
Technology: GenX3™; Planar; XPT™
auf Bestellung 156 Stücke:
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Anzahl Preis
6+12.47 EUR
8+9.19 EUR
9+8.69 EUR
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IXFX150N30P3 IXFK(X)150N30P3.pdf
IXFX150N30P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
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MIXG300PF1700TSF
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 315A
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXGN400N60A3 IXGN400N60A3.pdf
IXGN400N60A3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 190A
Pulsed collector current: 800A
Power dissipation: 830W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Produkt ist nicht verfügbar
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DPG120C300QB Littelfuse-Power-Semiconductors-DPG120C300QB-Datasheet?assetguid=A5371395-F911-4F4E-8C71-3DC160C40938
DPG120C300QB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 60Ax2; tube; Ifsm: 450A; TO3P; 275W
Max. off-state voltage: 300V
Max. forward voltage: 1.4V
Load current: 60A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.45kA
Power dissipation: 275W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO3P
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.73 EUR
8+9.12 EUR
9+8.62 EUR
Mindestbestellmenge: 6
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IXFP18N65X2M IXFP18N65X2M.pdf
IXFP18N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
Produkt ist nicht verfügbar
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IXFA18N65X2 IXF_18N65X2.pdf
IXFA18N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXFP18N65X2 IXF_18N65X2.pdf
IXFP18N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
Produkt ist nicht verfügbar
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IXFH18N65X2 IXF_18N65X2.pdf
IXFH18N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
Produkt ist nicht verfügbar
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DSEP2X91-03A description DSEP2X91-03A-DTE.pdf
DSEP2X91-03A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Semiconductor structure: double independent
Max. forward impulse current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Technology: HiPerFRED™
Case: SOT227B
Max. off-state voltage: 300V
Max. forward voltage: 1.54V
Load current: 90A x2
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+43.20 EUR
30+42.80 EUR
Mindestbestellmenge: 2
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CS45-16IO1 description CS45-08IO1-DTE.pdf CS45-16IO1.pdf
CS45-16IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
auf Bestellung 457 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.94 EUR
13+5.69 EUR
14+5.38 EUR
120+5.29 EUR
Mindestbestellmenge: 10
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