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IXFK64N60P3 IXFK64N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB0ABA0A0DD8BF&compId=IXF_64N60P3.pdf?ci_sign=a8ce04ebb208e064f869f0d2ea995cec98534685 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
auf Bestellung 291 Stücke:
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5+16.3 EUR
6+13.38 EUR
100+13.2 EUR
Mindestbestellmenge: 5
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CPC1788J CPC1788J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F17C0C7&compId=CPC1788.pdf?ci_sign=5afe43b0f4acb5db424133f790bb06fafda6d713 Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Switched voltage: max. 1kV DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 1.25Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 2.5kV
Body dimensions: 19.91x26.16x5.03mm
Turn-off time: 5ms
Turn-on time: 20ms
Control current max.: 100mA
auf Bestellung 29 Stücke:
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3+24.58 EUR
6+12.43 EUR
10+12.41 EUR
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CPC1708J CPC1708J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4927C8678E0C7&compId=CPC1708.pdf?ci_sign=ff32910265bbccbc6d0ceae5ab09eb3f000d60ca Category: DC Solid State Relays
Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; OptoMOS; 0.08Ω
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 5350mA
Switched voltage: max. 60V DC
Relay variant: current source
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 20ms
On-state resistance: 80mΩ
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
auf Bestellung 160 Stücke:
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6+13.9 EUR
8+9.15 EUR
9+8.65 EUR
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CPC1511Y CPC1511Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320048E0C7&compId=CPC1511.pdf?ci_sign=58b19b931ace12b777f563204bcc6482003a5ac9 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 450mA; max.230VAC
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
On-state resistance: 4Ω
Turn-on time: 4ms
Turn-off time: 2ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 450mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 230V AC; max. 230V DC
Control current max.: 50mA
Mounting: THT
Case: SIP4
auf Bestellung 210 Stücke:
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13+5.79 EUR
14+5.13 EUR
15+4.85 EUR
125+4.66 EUR
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PLB171P PLB171P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7AE0C7&compId=PLB171.pdf?ci_sign=9fe800a18959fd9115c3f387e4c1692996f299da Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 5kV
Body dimensions: 9.65x6.35x2.16mm
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.29 EUR
13+5.65 EUR
14+5.33 EUR
50+5.29 EUR
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IXFK64N60P IXFK64N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BBFE33F23C1820&compId=IXFK(X)64N60P.pdf?ci_sign=72bec012642347b0204adb069da5fad2f328c04f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1040W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 64A
On-state resistance: 96mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 200nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DSEK60-02AR DSEK60-02AR IXYS L124.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: ISOPLUS247™
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Produkt ist nicht verfügbar
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DSEK60-02A DSEK60-02A IXYS L124.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-3
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.99 EUR
13+5.72 EUR
14+5.42 EUR
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MIXG300PF1700TSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 315A
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DPG120C300QB DPG120C300QB IXYS Littelfuse-Power-Semiconductors-DPG120C300QB-Datasheet?assetguid=A5371395-F911-4F4E-8C71-3DC160C40938 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 60Ax2; tube; Ifsm: 450A; TO3P; 275W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.4V
Load current: 60A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.45kA
Power dissipation: 275W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO3P
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.73 EUR
8+9.12 EUR
9+8.62 EUR
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IXTQ64N25P IXTQ64N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CE00FFAAFE27&compId=IXTQ64N25P-DTE.pdf?ci_sign=8629d9d38dc4d997f8392b5cabb1618306ba9fab Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO3P
Mounting: THT
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Gate charge: 105nC
Technology: PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO3P
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 64A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IX4426NTR IX4426NTR IXYS littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Number of channels: 2
Case: SO8
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: inverting
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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IXKK85N60C IXKK85N60C IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC765820&compId=IXKK85N60C.pdf?ci_sign=45f48f1ec514485461df7d7e3f166714c6045391 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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IXTA120P065T IXTA120P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO263
Mounting: SMD
Kind of package: tube
Reverse recovery time: 53ns
Drain-source voltage: -65V
Drain current: -120A
On-state resistance: 10mΩ
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.42 EUR
14+5.15 EUR
15+4.88 EUR
Mindestbestellmenge: 10
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IXTA120N075T2 IXTA120N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA3439A5B43820&compId=IXTA(P)120N075T2.pdf?ci_sign=a989206584ccedc296376c463764890b543910ce Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 250W
Case: TO263
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 50ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 3 Stücke:
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3+23.84 EUR
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IXGN200N60B3 IXGN200N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3ABB94C6CA26FE1EC&compId=ixgn200n60b3.pdf?ci_sign=d01a746c4ff41454ca16c191f704bec2cc169241 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Power dissipation: 830W
Mechanical mounting: screw
Technology: GenX3™; PT
auf Bestellung 49 Stücke:
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2+58.8 EUR
3+58.14 EUR
10+56.54 EUR
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IXA70I1200NA IXA70I1200NA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2CDC3016C5820&compId=IXA70I1200NA.pdf?ci_sign=1464344c37dfa780e4641b18a4a9fec667ded4ae Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
Power dissipation: 350W
auf Bestellung 24 Stücke:
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2+40.18 EUR
10+39.54 EUR
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DSEI120-06A DSEI120-06A IXYS DSEI120-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 126A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.12V
Max. forward impulse current: 540A
Power dissipation: 357W
Technology: FRED
Kind of package: tube
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.49 EUR
7+10.48 EUR
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DMA150E1600NA DMA150E1600NA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA59E3F493F0F00D6&compId=DMA150E1600NA.pdf?ci_sign=61a9de61d149c9bbbbdac5a942f6e82898210d29 Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 150A; SOT227B; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Load current: 150A
Case: SOT227B
Max. forward voltage: 1.05V
Max. forward impulse current: 3kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
2+39.73 EUR
Mindestbestellmenge: 2
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IXTP110N055T2 IXTP110N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A327B8DD935820&compId=IXTA(P)110N055T2.pdf?ci_sign=95ba3ca6ece76e436480df8f9f361f529bc19588 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.21 EUR
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IXTP220N04T2 IXTP220N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC709D95CCF820&compId=IXTA(P)220N04T2.pdf?ci_sign=1db27c209e7af5f3f0d648bd91c318079852def5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.21 EUR
23+3.17 EUR
24+2.99 EUR
100+2.89 EUR
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IXXN100N60B3H1 IXXN100N60B3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2FE48F0DED820&compId=IXXN100N60B3H1.pdf?ci_sign=dbc0ccd256b35c98c62b271c39e3e96265dc21c7 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Pulsed collector current: 440A
Power dissipation: 500W
Electrical mounting: screw
Mechanical mounting: screw
Technology: GenX3™; XPT™
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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IXGN50N120C3H1 IXGN50N120C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2F25A1C1F1820&compId=IXGN50N120C3H1.pdf?ci_sign=3d94cccf132c01d4c993945a04d3f247f8047107 Category: IGBT modules
Description: Single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B; screw; 460W
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Power dissipation: 460W
Electrical mounting: screw
Mechanical mounting: screw
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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IXFK44N50P IXFK44N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0758E5260469&compId=IXFK44N50P.pdf?ci_sign=d640f1f4194f9dc2e366fdcc55cc57269a9c0090 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 44A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 650W
Polarisation: unipolar
Kind of package: tube
Gate charge: 98nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Produkt ist nicht verfügbar
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VHF25-08IO7 VHF25-08IO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1944179591820&compId=VHF25-ser.pdf?ci_sign=b45349266645b088e679b0569fcbdcd6528c9f31 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A
Case: ECO-PAC 1
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Features of semiconductor devices: freewheelling diode
Type of bridge rectifier: half-controlled
Leads: wire Ø 0.75mm
Max. off-state voltage: 0.8kV
Load current: 32A
Gate current: 25/50mA
Max. forward impulse current: 180A
auf Bestellung 20 Stücke:
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4+19.83 EUR
5+14.89 EUR
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CPC1025N CPC1025N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99590D7B70D13F8BF&compId=CPC1025N.pdf?ci_sign=58ef7bdb3f98bcd2cb1abd98798d3d35a65e7c48 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
auf Bestellung 2 Stücke:
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2+35.75 EUR
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IXFT20N100P IXFT20N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECE728CC0A18BF&compId=IXF_20N100P.pdf?ci_sign=e2a539356f4e584bf4dad0014f01227b046bdbad Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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IXFX420N10T IXFX420N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA57BFF6D4A18BF&compId=IXFK420N10T_IXFX420N10T.pdf?ci_sign=f703b8f2c268b8e9ba07cd2c3e4e8ce0b331312c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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DSEI60-02A DSEI60-02A IXYS DSEI60-02A.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 69A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 0.88V
Max. forward impulse current: 540A
Power dissipation: 150W
Technology: FRED
Kind of package: tube
auf Bestellung 277 Stücke:
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MDA72-16N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double,common anode; 1.6kV; If: 113Ax2; TO240AA
Case: TO240AA
Semiconductor structure: common anode; double
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.6V
Load current: 113A x2
Max. forward impulse current: 1.54kA
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MDA72-08N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Diode modules
Description: Module: diode; double,common anode; 800V; If: 113Ax2; TO240AA
Case: TO240AA
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.6V
Load current: 113A x2
Semiconductor structure: common anode; double
Max. forward impulse current: 1.54kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
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IXBH20N300 IXBH20N300 IXYS littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Turn-on time: 64ns
Turn-off time: 0.3µs
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 105nC
Technology: BiMOSFET™
Case: TO247-3
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DPF240X400NA DPF240X400NA IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA92966DC56E4A20C4&compId=DPF240X400NA.pdf?ci_sign=6fc4d0c4dfe81c07d0f6501815c460a2ef5b3645 Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.06V
Load current: 120A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SOT227B
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IXTY26P10T IXTY26P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
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IXTP26P10T IXTP26P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
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IXTA26P10T IXTA26P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
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IXFP6N120P IXFP6N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D454445020B820&compId=IXFA(H%2CP)6N120P.pdf?ci_sign=943297d656831e25efec803b2ad2b28ea7b42a34 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 92nC
Power dissipation: 250W
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CMA80MT1600NHR CMA80MT1600NHR IXYS media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet Category: Triacs
Description: Triac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: ISO247™
Gate current: 70/90mA
Kind of package: tube
Type of thyristor: triac
Mounting: THT
Max. load current: 40A
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MG17100S-BN4MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: Y4-M5
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
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IXTA200N055T2 IXTA200N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD8F02C5009820&compId=IXTA(P)200N055T2.pdf?ci_sign=b09970100e7885edd8a9745146ea46cc0cf0637b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Reverse recovery time: 49ns
Drain-source voltage: 55V
Drain current: 200A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 360W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
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CPC5712U CPC5712U IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85CD8B72C8D8BF&compId=CPC5712.pdf?ci_sign=ecc7e95d5c1594f45f4608f513d2fdc393fd7c97 Category: Drivers - integrated circuits
Description: IC: driver; SOP16; -500÷500uA; 3÷5.5V
Type of integrated circuit: driver
Case: SOP16
Output current: -500...500µA
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
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36+2.03 EUR
58+1.24 EUR
61+1.17 EUR
500+1.13 EUR
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DSEI2X61-02A DSEI2X61-02A IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9EBCBAFA325200CE&compId=DSEI2x61-02A.pdf?ci_sign=a688ed9403bfa028acfdd5382a8b3b2cbaee2de1 Category: Diode modules
Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 71A x2
Case: SOT227B
Max. forward voltage: 0.88V
Max. forward impulse current: 0.95kA
Electrical mounting: screw
Mechanical mounting: screw
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DSEI2X61-06C DSEI2X61-06C IXYS 96508.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 0.6kV
Load current: 60A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.8V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
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DSEI2X61-04C DSEI2X61-04C IXYS DSEI2X61-04C.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 0.6kV
Load current: 60A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
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3+30.93 EUR
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IXFH28N60P3 IXFH28N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285A2A90AE15820&compId=IXFH(Q)28N60P3.pdf?ci_sign=0f34ebb36ef205574a8cc03b1e646bbbf9a5d93c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
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IXTH3N150 IXTH3N150 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494D3820&compId=IXTH3N150.pdf?ci_sign=9f26c436d8a2db1056604f21919c428f65c6491b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
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MCC132-14io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED783F9BB4B38B42259&compId=MCC132-14io1.pdf?ci_sign=36cce519676ef7befdb41694a085cfd5acae9487 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.04kA
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CPC1014NTR CPC1014NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A752E0C7&compId=CPC1014N.pdf?ci_sign=a4c02ddb082d95fd63da7394eecc1088ee03122f Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Switched voltage: max. 60V AC; max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 0.4A
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 2Ω
Case: SOP4
Mounting: SMT
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MCC132-16io1 MCC132-16io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D5FD28D50DE27&compId=MCC132-16IO1-DTE.pdf?ci_sign=ede7be546f4de8829bef360b7a919176f9b7d2d7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.14V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
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MCC132-08io1 MCC132-08io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
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MCC132-12io1 MCC132-12io1 IXYS pVersion=0046&contRep=ZT&docId=E2920706D3E035F19A99005056AB752F&compId=L079.pdf?ci_sign=670f371d8f9338259ca653a886128336d5194817 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 5.08kA
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MCC132-18IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
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MCC132-14IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86EB5FF3B4F0C0C4&compId=MCC132-14io1B.pdf?ci_sign=075be34417d6ea2469487752d23265a7171d8ffc pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
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MCC132-16IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
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MCC132-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
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DSEI30-12A DSEI30-12A IXYS 92722.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26A; tube; Ifsm: 200A; TO247-2; 138W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 2.2V
Max. forward impulse current: 200A
Power dissipation: 138W
Technology: FRED
Kind of package: tube
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.79 EUR
16+4.66 EUR
17+4.4 EUR
Mindestbestellmenge: 11
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DSA60C45HB DSA60C45HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9AAE31081D8BF&compId=DSA60C45HB.pdf?ci_sign=c0020e9ae6ab7c51a260e30c95c39c59b755ac0d Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Case: TO247-3
Max. off-state voltage: 45V
Max. forward voltage: 0.66V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.55kA
Power dissipation: 160W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Produkt ist nicht verfügbar
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DSA60C60PB DSA60C60PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9B77B89AF38BF&compId=DSA60C60PB.pdf?ci_sign=973506983f66217d2a25bc2d0322d9632fed9b1d Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Case: TO220AB
Max. off-state voltage: 60V
Max. forward voltage: 0.77V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.45kA
Power dissipation: 175W
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Mounting: THT
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IXFK210N30X3 IXFK210N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB2D57B02A78BF&compId=IXF_210N30X3.pdf?ci_sign=b936bb2c259b202c476c66a13724d25b3b29cb21 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Reverse recovery time: 190ns
Drain-source voltage: 300V
Drain current: 210A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Gate charge: 375nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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DSEC120-12AK DSEC120-12AK IXYS DSEC120-12AK.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W
Mounting: THT
Case: TO264
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.66V
Load current: 60A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Max. forward impulse current: 0.5kA
Power dissipation: 330W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
5+16.1 EUR
Mindestbestellmenge: 5
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IXFK64N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB0ABA0A0DD8BF&compId=IXF_64N60P3.pdf?ci_sign=a8ce04ebb208e064f869f0d2ea995cec98534685
IXFK64N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.3 EUR
6+13.38 EUR
100+13.2 EUR
Mindestbestellmenge: 5
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CPC1788J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F17C0C7&compId=CPC1788.pdf?ci_sign=5afe43b0f4acb5db424133f790bb06fafda6d713
CPC1788J
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Switched voltage: max. 1kV DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 1.25Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 2.5kV
Body dimensions: 19.91x26.16x5.03mm
Turn-off time: 5ms
Turn-on time: 20ms
Control current max.: 100mA
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.58 EUR
6+12.43 EUR
10+12.41 EUR
Mindestbestellmenge: 3
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CPC1708J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4927C8678E0C7&compId=CPC1708.pdf?ci_sign=ff32910265bbccbc6d0ceae5ab09eb3f000d60ca
CPC1708J
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; OptoMOS; 0.08Ω
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 5350mA
Switched voltage: max. 60V DC
Relay variant: current source
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 20ms
On-state resistance: 80mΩ
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.9 EUR
8+9.15 EUR
9+8.65 EUR
Mindestbestellmenge: 6
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CPC1511Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320048E0C7&compId=CPC1511.pdf?ci_sign=58b19b931ace12b777f563204bcc6482003a5ac9
CPC1511Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 450mA; max.230VAC
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
On-state resistance: 4Ω
Turn-on time: 4ms
Turn-off time: 2ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 450mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 230V AC; max. 230V DC
Control current max.: 50mA
Mounting: THT
Case: SIP4
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.79 EUR
14+5.13 EUR
15+4.85 EUR
125+4.66 EUR
Mindestbestellmenge: 13
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PLB171P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7AE0C7&compId=PLB171.pdf?ci_sign=9fe800a18959fd9115c3f387e4c1692996f299da
PLB171P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 5kV
Body dimensions: 9.65x6.35x2.16mm
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.29 EUR
13+5.65 EUR
14+5.33 EUR
50+5.29 EUR
Mindestbestellmenge: 10
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IXFK64N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BBFE33F23C1820&compId=IXFK(X)64N60P.pdf?ci_sign=72bec012642347b0204adb069da5fad2f328c04f
IXFK64N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1040W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 64A
On-state resistance: 96mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 200nC
Kind of channel: enhancement
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DSEK60-02AR L124.pdf
DSEK60-02AR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: ISOPLUS247™
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Produkt ist nicht verfügbar
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DSEK60-02A L124.pdf
DSEK60-02A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-3
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.99 EUR
13+5.72 EUR
14+5.42 EUR
Mindestbestellmenge: 9
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MIXG300PF1700TSF
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 315A
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DPG120C300QB Littelfuse-Power-Semiconductors-DPG120C300QB-Datasheet?assetguid=A5371395-F911-4F4E-8C71-3DC160C40938
DPG120C300QB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 60Ax2; tube; Ifsm: 450A; TO3P; 275W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.4V
Load current: 60A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.45kA
Power dissipation: 275W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO3P
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.73 EUR
8+9.12 EUR
9+8.62 EUR
Mindestbestellmenge: 6
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IXTQ64N25P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CE00FFAAFE27&compId=IXTQ64N25P-DTE.pdf?ci_sign=8629d9d38dc4d997f8392b5cabb1618306ba9fab
IXTQ64N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO3P
Mounting: THT
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Gate charge: 105nC
Technology: PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO3P
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 64A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IX4426NTR littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250
IX4426NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Number of channels: 2
Case: SO8
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: inverting
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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IXKK85N60C pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC765820&compId=IXKK85N60C.pdf?ci_sign=45f48f1ec514485461df7d7e3f166714c6045391
IXKK85N60C
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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IXTA120P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7
IXTA120P065T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO263
Mounting: SMD
Kind of package: tube
Reverse recovery time: 53ns
Drain-source voltage: -65V
Drain current: -120A
On-state resistance: 10mΩ
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.42 EUR
14+5.15 EUR
15+4.88 EUR
Mindestbestellmenge: 10
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IXTA120N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA3439A5B43820&compId=IXTA(P)120N075T2.pdf?ci_sign=a989206584ccedc296376c463764890b543910ce
IXTA120N075T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 250W
Case: TO263
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 50ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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IXGN200N60B3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED3ABB94C6CA26FE1EC&compId=ixgn200n60b3.pdf?ci_sign=d01a746c4ff41454ca16c191f704bec2cc169241
IXGN200N60B3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Power dissipation: 830W
Mechanical mounting: screw
Technology: GenX3™; PT
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+58.8 EUR
3+58.14 EUR
10+56.54 EUR
Mindestbestellmenge: 2
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IXA70I1200NA pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2CDC3016C5820&compId=IXA70I1200NA.pdf?ci_sign=1464344c37dfa780e4641b18a4a9fec667ded4ae
IXA70I1200NA
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
Power dissipation: 350W
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+40.18 EUR
10+39.54 EUR
Mindestbestellmenge: 2
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DSEI120-06A DSEI120-06A.pdf
DSEI120-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 126A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.12V
Max. forward impulse current: 540A
Power dissipation: 357W
Technology: FRED
Kind of package: tube
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.49 EUR
7+10.48 EUR
Mindestbestellmenge: 5
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DMA150E1600NA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA59E3F493F0F00D6&compId=DMA150E1600NA.pdf?ci_sign=61a9de61d149c9bbbbdac5a942f6e82898210d29
DMA150E1600NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 150A; SOT227B; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Load current: 150A
Case: SOT227B
Max. forward voltage: 1.05V
Max. forward impulse current: 3kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+39.73 EUR
Mindestbestellmenge: 2
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IXTP110N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A327B8DD935820&compId=IXTA(P)110N055T2.pdf?ci_sign=95ba3ca6ece76e436480df8f9f361f529bc19588
IXTP110N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
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IXTP220N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC709D95CCF820&compId=IXTA(P)220N04T2.pdf?ci_sign=1db27c209e7af5f3f0d648bd91c318079852def5
IXTP220N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.21 EUR
23+3.17 EUR
24+2.99 EUR
100+2.89 EUR
Mindestbestellmenge: 14
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IXXN100N60B3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2FE48F0DED820&compId=IXXN100N60B3H1.pdf?ci_sign=dbc0ccd256b35c98c62b271c39e3e96265dc21c7
IXXN100N60B3H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Pulsed collector current: 440A
Power dissipation: 500W
Electrical mounting: screw
Mechanical mounting: screw
Technology: GenX3™; XPT™
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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IXGN50N120C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2F25A1C1F1820&compId=IXGN50N120C3H1.pdf?ci_sign=3d94cccf132c01d4c993945a04d3f247f8047107
IXGN50N120C3H1
Hersteller: IXYS
Category: IGBT modules
Description: Single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B; screw; 460W
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Power dissipation: 460W
Electrical mounting: screw
Mechanical mounting: screw
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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IXFK44N50P pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0758E5260469&compId=IXFK44N50P.pdf?ci_sign=d640f1f4194f9dc2e366fdcc55cc57269a9c0090
IXFK44N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 44A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 650W
Polarisation: unipolar
Kind of package: tube
Gate charge: 98nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Produkt ist nicht verfügbar
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VHF25-08IO7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1944179591820&compId=VHF25-ser.pdf?ci_sign=b45349266645b088e679b0569fcbdcd6528c9f31
VHF25-08IO7
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A
Case: ECO-PAC 1
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Features of semiconductor devices: freewheelling diode
Type of bridge rectifier: half-controlled
Leads: wire Ø 0.75mm
Max. off-state voltage: 0.8kV
Load current: 32A
Gate current: 25/50mA
Max. forward impulse current: 180A
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.83 EUR
5+14.89 EUR
Mindestbestellmenge: 4
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CPC1025N pVersion=0046&contRep=ZT&docId=005056AB82531EE99590D7B70D13F8BF&compId=CPC1025N.pdf?ci_sign=58ef7bdb3f98bcd2cb1abd98798d3d35a65e7c48
CPC1025N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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IXFT20N100P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECE728CC0A18BF&compId=IXF_20N100P.pdf?ci_sign=e2a539356f4e584bf4dad0014f01227b046bdbad
IXFT20N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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IXFX420N10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA57BFF6D4A18BF&compId=IXFK420N10T_IXFX420N10T.pdf?ci_sign=f703b8f2c268b8e9ba07cd2c3e4e8ce0b331312c
IXFX420N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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DSEI60-02A description DSEI60-02A.pdf
DSEI60-02A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 69A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 0.88V
Max. forward impulse current: 540A
Power dissipation: 150W
Technology: FRED
Kind of package: tube
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.67 EUR
12+6.22 EUR
13+5.88 EUR
Mindestbestellmenge: 9
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MDA72-16N1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 1.6kV; If: 113Ax2; TO240AA
Case: TO240AA
Semiconductor structure: common anode; double
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.6V
Load current: 113A x2
Max. forward impulse current: 1.54kA
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+37.22 EUR
3+37.21 EUR
Mindestbestellmenge: 2
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MDA72-08N1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 800V; If: 113Ax2; TO240AA
Case: TO240AA
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.6V
Load current: 113A x2
Semiconductor structure: common anode; double
Max. forward impulse current: 1.54kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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IXBH20N300 littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc
IXBH20N300
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Turn-on time: 64ns
Turn-off time: 0.3µs
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 105nC
Technology: BiMOSFET™
Case: TO247-3
Produkt ist nicht verfügbar
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DPF240X400NA pVersion=0046&contRep=ZT&docId=005056AB90B41EDA92966DC56E4A20C4&compId=DPF240X400NA.pdf?ci_sign=6fc4d0c4dfe81c07d0f6501815c460a2ef5b3645
DPF240X400NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.06V
Load current: 120A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SOT227B
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+49.79 EUR
Mindestbestellmenge: 2
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IXTY26P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124
IXTY26P10T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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IXTP26P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124
IXTP26P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.67 EUR
30+2.4 EUR
33+2.17 EUR
Mindestbestellmenge: 27
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IXTA26P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124
IXTA26P10T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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IXFP6N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D454445020B820&compId=IXFA(H%2CP)6N120P.pdf?ci_sign=943297d656831e25efec803b2ad2b28ea7b42a34
IXFP6N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 92nC
Power dissipation: 250W
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.27 EUR
9+8.08 EUR
10+7.64 EUR
Mindestbestellmenge: 7
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CMA80MT1600NHR media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet
CMA80MT1600NHR
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: ISO247™
Gate current: 70/90mA
Kind of package: tube
Type of thyristor: triac
Mounting: THT
Max. load current: 40A
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.03 EUR
9+8.31 EUR
30+7.99 EUR
Mindestbestellmenge: 6
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MG17100S-BN4MM
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: Y4-M5
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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IXTA200N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD8F02C5009820&compId=IXTA(P)200N055T2.pdf?ci_sign=b09970100e7885edd8a9745146ea46cc0cf0637b
IXTA200N055T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Reverse recovery time: 49ns
Drain-source voltage: 55V
Drain current: 200A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 360W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
Produkt ist nicht verfügbar
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CPC5712U pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85CD8B72C8D8BF&compId=CPC5712.pdf?ci_sign=ecc7e95d5c1594f45f4608f513d2fdc393fd7c97
CPC5712U
Hersteller: IXYS
Category: Drivers - integrated circuits
Description: IC: driver; SOP16; -500÷500uA; 3÷5.5V
Type of integrated circuit: driver
Case: SOP16
Output current: -500...500µA
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.23 EUR
36+2.03 EUR
58+1.24 EUR
61+1.17 EUR
500+1.13 EUR
Mindestbestellmenge: 23
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DSEI2X61-02A pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9EBCBAFA325200CE&compId=DSEI2x61-02A.pdf?ci_sign=a688ed9403bfa028acfdd5382a8b3b2cbaee2de1
DSEI2X61-02A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 71A x2
Case: SOT227B
Max. forward voltage: 0.88V
Max. forward impulse current: 0.95kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+30.7 EUR
10+29.52 EUR
Mindestbestellmenge: 3
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DSEI2X61-06C 96508.pdf
DSEI2X61-06C
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 0.6kV
Load current: 60A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.8V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.96 EUR
10+29.92 EUR
Mindestbestellmenge: 3
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DSEI2X61-04C DSEI2X61-04C.pdf
DSEI2X61-04C
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 0.6kV
Load current: 60A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+30.93 EUR
100+30.04 EUR
Mindestbestellmenge: 3
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IXFH28N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285A2A90AE15820&compId=IXFH(Q)28N60P3.pdf?ci_sign=0f34ebb36ef205574a8cc03b1e646bbbf9a5d93c
IXFH28N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 564 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.35 EUR
11+6.51 EUR
12+6.15 EUR
120+5.92 EUR
510+5.91 EUR
Mindestbestellmenge: 9
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IXTH3N150 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494D3820&compId=IXTH3N150.pdf?ci_sign=9f26c436d8a2db1056604f21919c428f65c6491b
IXTH3N150
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
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MCC132-14io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED783F9BB4B38B42259&compId=MCC132-14io1.pdf?ci_sign=36cce519676ef7befdb41694a085cfd5acae9487 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.04kA
Produkt ist nicht verfügbar
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CPC1014NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A752E0C7&compId=CPC1014N.pdf?ci_sign=a4c02ddb082d95fd63da7394eecc1088ee03122f
CPC1014NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Switched voltage: max. 60V AC; max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 0.4A
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 2Ω
Case: SOP4
Mounting: SMT
Produkt ist nicht verfügbar
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MCC132-16io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D5FD28D50DE27&compId=MCC132-16IO1-DTE.pdf?ci_sign=ede7be546f4de8829bef360b7a919176f9b7d2d7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCC132-16io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.14V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
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MCC132-08io1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCC132-08io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+64.36 EUR
Mindestbestellmenge: 2
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MCC132-12io1 pVersion=0046&contRep=ZT&docId=E2920706D3E035F19A99005056AB752F&compId=L079.pdf?ci_sign=670f371d8f9338259ca653a886128336d5194817 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCC132-12io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 5.08kA
Produkt ist nicht verfügbar
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MCC132-18IO1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Produkt ist nicht verfügbar
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MCC132-14IO1B pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86EB5FF3B4F0C0C4&compId=MCC132-14io1B.pdf?ci_sign=075be34417d6ea2469487752d23265a7171d8ffc pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Produkt ist nicht verfügbar
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MCC132-16IO1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Produkt ist nicht verfügbar
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MCC132-18io1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Produkt ist nicht verfügbar
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DSEI30-12A 92722.pdf
DSEI30-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26A; tube; Ifsm: 200A; TO247-2; 138W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 2.2V
Max. forward impulse current: 200A
Power dissipation: 138W
Technology: FRED
Kind of package: tube
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.79 EUR
16+4.66 EUR
17+4.4 EUR
Mindestbestellmenge: 11
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DSA60C45HB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9AAE31081D8BF&compId=DSA60C45HB.pdf?ci_sign=c0020e9ae6ab7c51a260e30c95c39c59b755ac0d
DSA60C45HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Case: TO247-3
Max. off-state voltage: 45V
Max. forward voltage: 0.66V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.55kA
Power dissipation: 160W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Produkt ist nicht verfügbar
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DSA60C60PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9B77B89AF38BF&compId=DSA60C60PB.pdf?ci_sign=973506983f66217d2a25bc2d0322d9632fed9b1d
DSA60C60PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Case: TO220AB
Max. off-state voltage: 60V
Max. forward voltage: 0.77V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.45kA
Power dissipation: 175W
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Produkt ist nicht verfügbar
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IXFK210N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB2D57B02A78BF&compId=IXF_210N30X3.pdf?ci_sign=b936bb2c259b202c476c66a13724d25b3b29cb21 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFK210N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Reverse recovery time: 190ns
Drain-source voltage: 300V
Drain current: 210A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Gate charge: 375nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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DSEC120-12AK DSEC120-12AK.pdf
DSEC120-12AK
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W
Mounting: THT
Case: TO264
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.66V
Load current: 60A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Max. forward impulse current: 0.5kA
Power dissipation: 330W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.1 EUR
Mindestbestellmenge: 5
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