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CPC1130N CPC1130N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20CC0C7&compId=CPC1130N.pdf?ci_sign=44150b4b94226c50a67f054d89a376cc555a5c6e Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 30Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
auf Bestellung 12 Stücke:
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12+5.96 EUR
Mindestbestellmenge: 12
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CPC1709J CPC1709J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F12A0C7&compId=CPC1709.pdf?ci_sign=2ef663d2c760ef1dfecea61215b25cd407320d1c Category: DC Solid State Relays
Description: Relay: solid state; 11000mA; max.60VDC; THT; ISOPLUS264™; OptoMOS
Case: ISOPLUS264™
Mounting: THT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
On-state resistance: 50mΩ
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Kind of output: MOSFET
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
Max. operating current: 11A
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 60V DC
Control current max.: 100mA
auf Bestellung 124 Stücke:
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7+11.61 EUR
9+8.19 EUR
10+7.75 EUR
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CPC1030N CPC1030N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75BE0C7&compId=CPC1030N.pdf?ci_sign=f5306a3547ebea4ac3441d82e07f700914fb2e7d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
auf Bestellung 129 Stücke:
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31+2.32 EUR
40+1.8 EUR
43+1.7 EUR
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CPC1125N CPC1125N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20B60C7&compId=CPC1125N.pdf?ci_sign=37beec7290e33484c75fff726185ce9ab1651de2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
auf Bestellung 447 Stücke:
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32+2.3 EUR
36+1.99 EUR
52+1.4 EUR
54+1.33 EUR
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IXYH40N65B3D1 IXYH40N65B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9778C68A6B820&compId=IXYH(Q)40N65B3D1.pdf?ci_sign=053909c58e9af5039abdcc2cb73495ff9e375d03 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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IXYH40N65C3D1 IXYH40N65C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE8E74566229820&compId=IXYH(Q)40N65C3D1.pdf?ci_sign=70b1e20af73ed62841d5a82150bbefa1c5b9aaac Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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IXYH40N65C3H1 IXYH40N65C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA983129FB89820&compId=IXYH40N65C3H1.pdf?ci_sign=cf3acc3425587367e01a2ddb8d46796446484611 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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IXXH140N65B4 IXXH140N65B4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE565B529285820&compId=IXXH140N65B4.pdf?ci_sign=b96f4d9746e43345aadce7863f912042c14e45ad Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXXH140N65C4 IXXH140N65C4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE573AB03C7D820&compId=IXXH140N65C4.pdf?ci_sign=877ec4871964cf6a9be6efb07cc4a25c03139af1 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXXX140N65B4H1 IXXX140N65B4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA5517FAC79820&compId=IXXX140N65B4H1.pdf?ci_sign=4d753757f8d1f156186aa30c3f1ef90cd98537f4 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXFT15N100Q3 IXFT15N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECE0AF857958BF&compId=IXF_15N100Q3.pdf?ci_sign=1dd331295c1d7ea0154eeba2040fc94c4aba0ac2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTA05N100 IXTA05N100 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CFC3007D5820&compId=IXTA(P)05N100_HV.pdf?ci_sign=7a5ec5e1cee1b6c6154e445efc3fb4608695a56f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXTA05N100HV IXTA05N100HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CFC3007D5820&compId=IXTA(P)05N100_HV.pdf?ci_sign=7a5ec5e1cee1b6c6154e445efc3fb4608695a56f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Case: TO263HV
Mounting: SMD
Kind of package: tube
Reverse recovery time: 710ns
Drain-source voltage: 1kV
Drain current: 0.75A
On-state resistance: 17Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.42 EUR
18+4.09 EUR
21+3.53 EUR
22+3.35 EUR
50+3.33 EUR
Mindestbestellmenge: 17
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IXTP05N100 IXTP05N100 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CFC3007D5820&compId=IXTA(P)05N100_HV.pdf?ci_sign=7a5ec5e1cee1b6c6154e445efc3fb4608695a56f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO220AB
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Features of semiconductor devices: standard power mosfet
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IXTP05N100P IXTP05N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12CB820&compId=IXTP05N100P.pdf?ci_sign=d4781f4c3352d29dcd458ddadab27f78de1e370d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.5A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 750ns
Features of semiconductor devices: standard power mosfet
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IXDN614CI IXDN614CI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 729 Stücke:
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14+5.45 EUR
16+4.58 EUR
17+4.32 EUR
50+4.16 EUR
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IXDN614SI IXDN614SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Kind of integrated circuit: gate driver; low-side
Kind of package: tube
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Operating temperature: -40...125°C
Output current: -14...14A
Turn-off time: 130ns
Turn-on time: 140ns
Number of channels: 1
Supply voltage: 4.5...35V
Case: SO8-EP
auf Bestellung 23 Stücke:
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18+4.19 EUR
20+3.7 EUR
22+3.39 EUR
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DSEI2X101-12A DSEI2X101-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23D6D3EBA55EA&compId=DSEI2X101-12A.pdf?ci_sign=3323ccfdcdc82d9c2e07e3e5a0e84f2ebdcc75bb description Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 91Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 91A x2
Case: SOT227B
Max. forward voltage: 1.87V
Max. forward impulse current: 970A
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 69 Stücke:
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2+48.19 EUR
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DSEI2X121-02A DSEI2X121-02A IXYS pVersion=0046&contRep=ZT&docId=E1C04A8FCC4F99F1A6F5005056AB5A8F&compId=DSEI2x121-02A.pdf?ci_sign=15d097bd648c4bf545b15456011d6b6ce72e2bdb Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 123A x2
Case: SOT227B
Max. forward voltage: 1.1V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 194 Stücke:
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3+32.89 EUR
5+32.38 EUR
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IXFN220N20X3 IXFN220N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9909A88A74D1A18BF&compId=IXFN220N20X3.pdf?ci_sign=dca2a6ff4e3c80e41699692c4799b3d0cdfcd691 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 204nC
Reverse recovery time: 128ns
Kind of channel: enhancement
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IXTX8N150L IXTX8N150L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D38D3CED8BB820&compId=IXTK(X)8N150L.pdf?ci_sign=90c93573bfcdd21862ce04ca99385de8a4c56b66 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
Drain current: 8A
Drain-source voltage: 1.5kV
auf Bestellung 2 Stücke:
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2+42.53 EUR
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IXTP2N65X2 IXTP2N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89C4F8CE3158BF&compId=IXTP(Y)2N65X2.pdf?ci_sign=a1b44b73e461987c86a1219b0eef051f39a61060 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
Produkt ist nicht verfügbar
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IXTP24N65X2M IXTP24N65X2M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC6AF60B9418BF&compId=IXTP24N65X2M.pdf?ci_sign=acf4ac55932da38e66e322ad68acfc5d0d08dc97 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
auf Bestellung 120 Stücke:
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13+5.55 EUR
20+3.6 EUR
22+3.4 EUR
100+3.27 EUR
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IXFK36N60P IXFK36N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC1E5B4133F820&compId=IXFH(K%2CT)36N60P.pdf?ci_sign=f303cae51d0f22faf44d1bff5e4ef775e61b58ec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
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2+35.75 EUR
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IXGH36N60B3 IXGH36N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA930AC9867820&compId=IXGH36N60B3.pdf?ci_sign=08c7d1e2a9e74db587475c9314ff2d5aee6bc56b Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
auf Bestellung 227 Stücke:
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11+6.85 EUR
15+4.85 EUR
16+4.59 EUR
30+4.4 EUR
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IXGH36N60B3C1 IXGH36N60B3C1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B381E0E8A4CB5E28&compId=IXGx36N60B3C1-DTE.pdf?ci_sign=07bf7e4ba852ade077c7d931cbc7da7c0d97fec4 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 350ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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MCD132-12io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFC0F4DFD0400C4&compId=MCD132-12io1.pdf?ci_sign=ccb3fb2e4b3adb0d9dfcd1cd5230aec3aec26151 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.2kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Type of semiconductor module: diode-thyristor
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MCD132-14io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFC1765423440C4&compId=MCD132-14io1.pdf?ci_sign=a2cfdac47c4188aef9038098ccab6ad3994e4773 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.4kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Type of semiconductor module: diode-thyristor
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MCD132-16io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58AA830AC1E84E469&compId=MCD132-16IO1.pdf?ci_sign=d0fa47198bed79205152bb0b2872fb581acfee90 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.6kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MCD132-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFC1EB7C7D400C4&compId=MCD132-18io1.pdf?ci_sign=5b9e1147f8b6b5cdd1bafc6480d51d735a74daba pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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IXFL82N60P IXFL82N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F95474BA4F820&compId=IXFL82N60P.pdf?ci_sign=aceb8365e96b8b9623c8f150f5e611f540782014 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 55A
Power dissipation: 625W
Case: ISOPLUS264™
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.4 EUR
Mindestbestellmenge: 5
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MCMA50P1200TA MCMA50P1200TA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.48V
Load current: 50A
Semiconductor structure: double series
Gate current: 78/200mA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: TO240AA
Produkt ist nicht verfügbar
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MCMA50P1600TA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 50A; TO240AA; Ufmax: 1.48V
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.48V
Load current: 50A
Semiconductor structure: double series
Gate current: 78/200mA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: TO240AA
Produkt ist nicht verfügbar
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MDMA50P1200TG IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82E9F44A6C80C4&compId=MDMA50P1200TG.pdf?ci_sign=c338cd758340ff753151ab05348149331307a229 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.09V
Load current: 50A
Semiconductor structure: double series
Max. forward impulse current: 850A
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: TO240AA
Produkt ist nicht verfügbar
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MDMA50P1600TG IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82F5CADE9380C4&compId=MDMA50P1600TG.pdf?ci_sign=0a5f5597242916f0250f9ce76767b1af5665c5e0 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 50A; TO240AA; Ufmax: 1.09V
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.09V
Load current: 50A
Semiconductor structure: double series
Max. forward impulse current: 850A
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: TO240AA
Produkt ist nicht verfügbar
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IXFN50N120SK IXFN50N120SK IXYS media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Gate charge: 115nC
Reverse recovery time: 54ns
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
1+90.88 EUR
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IXFA130N10T2 IXFA130N10T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDDFC904CE7820&compId=IXFA(P)130N10T2.pdf?ci_sign=9f7a4995595efb7e18b0a338b9a9c0baa1ff9a83 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.23 EUR
18+4.05 EUR
19+3.82 EUR
Mindestbestellmenge: 12
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IXFH230N10T IXFH230N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F37820&compId=IXFH230N10T.pdf?ci_sign=7906ddc75f59da0a6c8caab968b9ecc6143741fa Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.21 EUR
Mindestbestellmenge: 7
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IXFP130N10T2 IXFP130N10T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDDFC904CE7820&compId=IXFA(P)130N10T2.pdf?ci_sign=9f7a4995595efb7e18b0a338b9a9c0baa1ff9a83 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.49 EUR
18+4.03 EUR
20+3.58 EUR
21+3.45 EUR
Mindestbestellmenge: 16
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CPC1560G CPC1560G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D8C0C7&compId=CPC1560.pdf?ci_sign=c3c246383ef6fa3887c9a7b5b676f250f34749d1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 5.6Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 0.1ms
Turn-off time: 400µs
Kind of output: MOSFET
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.56 EUR
20+3.68 EUR
21+3.47 EUR
Mindestbestellmenge: 13
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VVZ110-12IO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C861DB90B34D8BF&compId=VVZ110_VVZ175.pdf?ci_sign=07196062ed3a464ff7e33b39e08a02fdb9b7931a Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E
Version: module
Leads: M6 screws
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.75V
Load current: 110A
Gate current: 100/200mA
Max. forward impulse current: 1.35kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of bridge rectifier: half-controlled
Case: PWS-E
Produkt ist nicht verfügbar
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IXTH50P10 IXTH50P10 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA07D75C831B8BF&compId=IXT_50P10.pdf?ci_sign=cc953308140627b6febcf9593e82ba0797b12d8b Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Reverse recovery time: 180ns
Drain-source voltage: -100V
Drain current: -50A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
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IXTT50P10 IXTT50P10 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA07D75C831B8BF&compId=IXT_50P10.pdf?ci_sign=cc953308140627b6febcf9593e82ba0797b12d8b Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Reverse recovery time: 180ns
Drain-source voltage: -100V
Drain current: -50A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO268
Produkt ist nicht verfügbar
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IXFP60N25X3M IXFP60N25X3M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A59820&compId=IXFP60N25X3M.pdf?ci_sign=313b25dbeb5aa4d0c3060d4a0514a7fa0f1de198 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.24 EUR
11+6.66 EUR
12+6.31 EUR
Mindestbestellmenge: 8
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IXTN210P10T IXTN210P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE797949FD586272748&compId=IXTN210P10T.pdf?ci_sign=c7eaa6ff621298b381d20e5aabc3375642501283 Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Case: SOT227B
Semiconductor structure: single transistor
Technology: TrenchP™
Polarisation: unipolar
Pulsed drain current: -800A
Drain current: -210A
Drain-source voltage: -100V
Reverse recovery time: 200ns
Gate charge: 740nC
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 830W
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXTR210P10T IXTR210P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA04275137A38BF&compId=IXTR210P10T.pdf?ci_sign=6be69c09b119a4bc5566676e52a110aa09280e61 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Technology: TrenchP™
Polarisation: unipolar
Drain current: -195A
Drain-source voltage: -100V
Reverse recovery time: 200ns
Gate charge: 740nC
On-state resistance: 8mΩ
Gate-source voltage: ±15V
Power dissipation: 390W
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
3+32.6 EUR
30+31.39 EUR
Mindestbestellmenge: 3
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IXTX210P10T IXTX210P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03E7174C718BF&compId=IXTX210P10T.pdf?ci_sign=eb9be669937aaa10adc6b2be9042b5a5749257a3 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Technology: TrenchP™
Polarisation: unipolar
Drain current: -210A
Drain-source voltage: -100V
Reverse recovery time: 200ns
Gate charge: 740nC
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
3+30.26 EUR
10+29.1 EUR
Mindestbestellmenge: 3
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CPC1510G CPC1510G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004780C7&compId=CPC1510.pdf?ci_sign=dca2f490d390e88ab018824ec0cbe6d4e63b3e56 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Kind of output: MOSFET
Turn-off time: 2ms
Turn-on time: 2ms
On-state resistance: 15Ω
Contacts configuration: SPST-NO
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.86 EUR
23+3.22 EUR
24+3.03 EUR
Mindestbestellmenge: 19
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CPC1510GS CPC1510GS IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9958FDF2EB56DF8BF&compId=CPC1510.pdf?ci_sign=9749f199defe3add8fb64a51a16864787d36708b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.92 EUR
21+3.49 EUR
22+3.29 EUR
Mindestbestellmenge: 11
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DSEC16-12A DSEC16-12A IXYS DSEC16-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W
Mounting: THT
Max. forward impulse current: 40A
Power dissipation: 60W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.94V
Load current: 8A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
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DSEC16-12AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4F5F44C2260C4&compId=DSEC16-12AS.pdf?ci_sign=7fe88d45cfa69a339b55e2fa6635825aa1a7704b Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Mounting: SMD
Max. forward impulse current: 40A
Power dissipation: 60W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Case: D2PAK
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.96V
Load current: 8A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
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IXTQ120N20P IXTQ120N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9109183E093E27&compId=IXTK120N20P-DTE.pdf?ci_sign=8d92652847182241575b90496cedc624b85642c3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Case: TO3P
Mounting: THT
Drain-source voltage: 200V
Drain current: 120A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Reverse recovery time: 180ns
Power dissipation: 714W
Polarisation: unipolar
Kind of package: tube
Gate charge: 152nC
Technology: PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2 Stücke:
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2+35.75 EUR
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PLB190 PLB190 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.38 EUR
14+5.13 EUR
15+4.85 EUR
50+4.76 EUR
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PLB190S PLB190S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
12+5.96 EUR
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PLB190STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Produkt ist nicht verfügbar
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IXTQ34N65X2M IXTQ34N65X2M IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtq34n65x2m_datasheet.pdf?assetguid=9e2804bf-85d4-45e2-ba6f-de4ee48d3cec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 27 Stücke:
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7+11.55 EUR
9+7.95 EUR
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IXTQ48N65X2M IXTQ48N65X2M IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
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6+14.13 EUR
8+9.6 EUR
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IXFP60N25X3 IXFP60N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48077B3DDB820&compId=IXFA(P%2CQ)60N25X3.pdf?ci_sign=40bf31d6f48e6a29413d60f94152aaab04d45448 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 302 Stücke:
Lieferzeit 14-21 Tag (e)
8+10.18 EUR
10+7.19 EUR
11+6.81 EUR
100+6.55 EUR
Mindestbestellmenge: 8
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IXFK102N30P IXFK102N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F945957269820&compId=IXFK102N30P.pdf?ci_sign=c151da4b07d5bf21f7c6dd2fd7ca83cee205a948 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Power dissipation: 700W
Case: TO264
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 224nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 5 Stücke:
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4+19.99 EUR
5+14.3 EUR
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IXTH32N65X IXTH32N65X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC14A9F2EB3820&compId=IXTH(P%2CQ)32N65X.pdf?ci_sign=6a88174097b72279f3942c45d4c91b42e2da5718 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 169 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.12 EUR
11+6.54 EUR
12+6.19 EUR
Mindestbestellmenge: 8
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CPC1130N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20CC0C7&compId=CPC1130N.pdf?ci_sign=44150b4b94226c50a67f054d89a376cc555a5c6e
CPC1130N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 30Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.96 EUR
Mindestbestellmenge: 12
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CPC1709J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F12A0C7&compId=CPC1709.pdf?ci_sign=2ef663d2c760ef1dfecea61215b25cd407320d1c
CPC1709J
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 11000mA; max.60VDC; THT; ISOPLUS264™; OptoMOS
Case: ISOPLUS264™
Mounting: THT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
On-state resistance: 50mΩ
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Kind of output: MOSFET
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
Max. operating current: 11A
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 60V DC
Control current max.: 100mA
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.61 EUR
9+8.19 EUR
10+7.75 EUR
Mindestbestellmenge: 7
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CPC1030N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75BE0C7&compId=CPC1030N.pdf?ci_sign=f5306a3547ebea4ac3441d82e07f700914fb2e7d
CPC1030N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.32 EUR
40+1.8 EUR
43+1.7 EUR
Mindestbestellmenge: 31
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CPC1125N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20B60C7&compId=CPC1125N.pdf?ci_sign=37beec7290e33484c75fff726185ce9ab1651de2
CPC1125N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
auf Bestellung 447 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.3 EUR
36+1.99 EUR
52+1.4 EUR
54+1.33 EUR
Mindestbestellmenge: 32
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IXYH40N65B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9778C68A6B820&compId=IXYH(Q)40N65B3D1.pdf?ci_sign=053909c58e9af5039abdcc2cb73495ff9e375d03
IXYH40N65B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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IXYH40N65C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE8E74566229820&compId=IXYH(Q)40N65C3D1.pdf?ci_sign=70b1e20af73ed62841d5a82150bbefa1c5b9aaac
IXYH40N65C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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IXYH40N65C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA983129FB89820&compId=IXYH40N65C3H1.pdf?ci_sign=cf3acc3425587367e01a2ddb8d46796446484611
IXYH40N65C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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IXXH140N65B4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE565B529285820&compId=IXXH140N65B4.pdf?ci_sign=b96f4d9746e43345aadce7863f912042c14e45ad
IXXH140N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXXH140N65C4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE573AB03C7D820&compId=IXXH140N65C4.pdf?ci_sign=877ec4871964cf6a9be6efb07cc4a25c03139af1
IXXH140N65C4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXXX140N65B4H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA5517FAC79820&compId=IXXX140N65B4H1.pdf?ci_sign=4d753757f8d1f156186aa30c3f1ef90cd98537f4
IXXX140N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXFT15N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECE0AF857958BF&compId=IXF_15N100Q3.pdf?ci_sign=1dd331295c1d7ea0154eeba2040fc94c4aba0ac2
IXFT15N100Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTA05N100 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CFC3007D5820&compId=IXTA(P)05N100_HV.pdf?ci_sign=7a5ec5e1cee1b6c6154e445efc3fb4608695a56f
IXTA05N100
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXTA05N100HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CFC3007D5820&compId=IXTA(P)05N100_HV.pdf?ci_sign=7a5ec5e1cee1b6c6154e445efc3fb4608695a56f
IXTA05N100HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Case: TO263HV
Mounting: SMD
Kind of package: tube
Reverse recovery time: 710ns
Drain-source voltage: 1kV
Drain current: 0.75A
On-state resistance: 17Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.42 EUR
18+4.09 EUR
21+3.53 EUR
22+3.35 EUR
50+3.33 EUR
Mindestbestellmenge: 17
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IXTP05N100 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CFC3007D5820&compId=IXTA(P)05N100_HV.pdf?ci_sign=7a5ec5e1cee1b6c6154e445efc3fb4608695a56f
IXTP05N100
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO220AB
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXTP05N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12CB820&compId=IXTP05N100P.pdf?ci_sign=d4781f4c3352d29dcd458ddadab27f78de1e370d
IXTP05N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.5A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 750ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXDN614CI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDN614CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 729 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.45 EUR
16+4.58 EUR
17+4.32 EUR
50+4.16 EUR
Mindestbestellmenge: 14
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IXDN614SI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDN614SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Kind of integrated circuit: gate driver; low-side
Kind of package: tube
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Operating temperature: -40...125°C
Output current: -14...14A
Turn-off time: 130ns
Turn-on time: 140ns
Number of channels: 1
Supply voltage: 4.5...35V
Case: SO8-EP
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.19 EUR
20+3.7 EUR
22+3.39 EUR
Mindestbestellmenge: 18
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DSEI2X101-12A description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23D6D3EBA55EA&compId=DSEI2X101-12A.pdf?ci_sign=3323ccfdcdc82d9c2e07e3e5a0e84f2ebdcc75bb
DSEI2X101-12A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 91Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 91A x2
Case: SOT227B
Max. forward voltage: 1.87V
Max. forward impulse current: 970A
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+48.19 EUR
Mindestbestellmenge: 2
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DSEI2X121-02A pVersion=0046&contRep=ZT&docId=E1C04A8FCC4F99F1A6F5005056AB5A8F&compId=DSEI2x121-02A.pdf?ci_sign=15d097bd648c4bf545b15456011d6b6ce72e2bdb
DSEI2X121-02A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 123A x2
Case: SOT227B
Max. forward voltage: 1.1V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.89 EUR
5+32.38 EUR
Mindestbestellmenge: 3
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IXFN220N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE9909A88A74D1A18BF&compId=IXFN220N20X3.pdf?ci_sign=dca2a6ff4e3c80e41699692c4799b3d0cdfcd691 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFN220N20X3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 204nC
Reverse recovery time: 128ns
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTX8N150L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D38D3CED8BB820&compId=IXTK(X)8N150L.pdf?ci_sign=90c93573bfcdd21862ce04ca99385de8a4c56b66
IXTX8N150L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
Drain current: 8A
Drain-source voltage: 1.5kV
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.53 EUR
Mindestbestellmenge: 2
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IXTP2N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89C4F8CE3158BF&compId=IXTP(Y)2N65X2.pdf?ci_sign=a1b44b73e461987c86a1219b0eef051f39a61060
IXTP2N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
Produkt ist nicht verfügbar
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IXTP24N65X2M pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC6AF60B9418BF&compId=IXTP24N65X2M.pdf?ci_sign=acf4ac55932da38e66e322ad68acfc5d0d08dc97
IXTP24N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.55 EUR
20+3.6 EUR
22+3.4 EUR
100+3.27 EUR
Mindestbestellmenge: 13
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IXFK36N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC1E5B4133F820&compId=IXFH(K%2CT)36N60P.pdf?ci_sign=f303cae51d0f22faf44d1bff5e4ef775e61b58ec
IXFK36N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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IXGH36N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA930AC9867820&compId=IXGH36N60B3.pdf?ci_sign=08c7d1e2a9e74db587475c9314ff2d5aee6bc56b
IXGH36N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.85 EUR
15+4.85 EUR
16+4.59 EUR
30+4.4 EUR
Mindestbestellmenge: 11
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IXGH36N60B3C1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B381E0E8A4CB5E28&compId=IXGx36N60B3C1-DTE.pdf?ci_sign=07bf7e4ba852ade077c7d931cbc7da7c0d97fec4
IXGH36N60B3C1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 350ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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MCD132-12io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFC0F4DFD0400C4&compId=MCD132-12io1.pdf?ci_sign=ccb3fb2e4b3adb0d9dfcd1cd5230aec3aec26151 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.2kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MCD132-14io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFC1765423440C4&compId=MCD132-14io1.pdf?ci_sign=a2cfdac47c4188aef9038098ccab6ad3994e4773 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.4kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MCD132-16io1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58AA830AC1E84E469&compId=MCD132-16IO1.pdf?ci_sign=d0fa47198bed79205152bb0b2872fb581acfee90 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.6kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MCD132-18io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFC1EB7C7D400C4&compId=MCD132-18io1.pdf?ci_sign=5b9e1147f8b6b5cdd1bafc6480d51d735a74daba pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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IXFL82N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F95474BA4F820&compId=IXFL82N60P.pdf?ci_sign=aceb8365e96b8b9623c8f150f5e611f540782014
IXFL82N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 55A
Power dissipation: 625W
Case: ISOPLUS264™
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.4 EUR
Mindestbestellmenge: 5
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MCMA50P1200TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCMA50P1200TA
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.48V
Load current: 50A
Semiconductor structure: double series
Gate current: 78/200mA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: TO240AA
Produkt ist nicht verfügbar
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MCMA50P1600TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 50A; TO240AA; Ufmax: 1.48V
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.48V
Load current: 50A
Semiconductor structure: double series
Gate current: 78/200mA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: TO240AA
Produkt ist nicht verfügbar
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MDMA50P1200TG pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82E9F44A6C80C4&compId=MDMA50P1200TG.pdf?ci_sign=c338cd758340ff753151ab05348149331307a229 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.09V
Load current: 50A
Semiconductor structure: double series
Max. forward impulse current: 850A
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: TO240AA
Produkt ist nicht verfügbar
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MDMA50P1600TG pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82F5CADE9380C4&compId=MDMA50P1600TG.pdf?ci_sign=0a5f5597242916f0250f9ce76767b1af5665c5e0 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 50A; TO240AA; Ufmax: 1.09V
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.09V
Load current: 50A
Semiconductor structure: double series
Max. forward impulse current: 850A
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: TO240AA
Produkt ist nicht verfügbar
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IXFN50N120SK media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet
IXFN50N120SK
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Gate charge: 115nC
Reverse recovery time: 54ns
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+90.88 EUR
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IXFA130N10T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDDFC904CE7820&compId=IXFA(P)130N10T2.pdf?ci_sign=9f7a4995595efb7e18b0a338b9a9c0baa1ff9a83
IXFA130N10T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.23 EUR
18+4.05 EUR
19+3.82 EUR
Mindestbestellmenge: 12
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IXFH230N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F37820&compId=IXFH230N10T.pdf?ci_sign=7906ddc75f59da0a6c8caab968b9ecc6143741fa
IXFH230N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
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IXFP130N10T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDDFC904CE7820&compId=IXFA(P)130N10T2.pdf?ci_sign=9f7a4995595efb7e18b0a338b9a9c0baa1ff9a83
IXFP130N10T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.49 EUR
18+4.03 EUR
20+3.58 EUR
21+3.45 EUR
Mindestbestellmenge: 16
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CPC1560G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D8C0C7&compId=CPC1560.pdf?ci_sign=c3c246383ef6fa3887c9a7b5b676f250f34749d1
CPC1560G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 5.6Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 0.1ms
Turn-off time: 400µs
Kind of output: MOSFET
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.56 EUR
20+3.68 EUR
21+3.47 EUR
Mindestbestellmenge: 13
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VVZ110-12IO7 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C861DB90B34D8BF&compId=VVZ110_VVZ175.pdf?ci_sign=07196062ed3a464ff7e33b39e08a02fdb9b7931a
Hersteller: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E
Version: module
Leads: M6 screws
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.75V
Load current: 110A
Gate current: 100/200mA
Max. forward impulse current: 1.35kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of bridge rectifier: half-controlled
Case: PWS-E
Produkt ist nicht verfügbar
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IXTH50P10 pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA07D75C831B8BF&compId=IXT_50P10.pdf?ci_sign=cc953308140627b6febcf9593e82ba0797b12d8b
IXTH50P10
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Reverse recovery time: 180ns
Drain-source voltage: -100V
Drain current: -50A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
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IXTT50P10 pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA07D75C831B8BF&compId=IXT_50P10.pdf?ci_sign=cc953308140627b6febcf9593e82ba0797b12d8b
IXTT50P10
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Reverse recovery time: 180ns
Drain-source voltage: -100V
Drain current: -50A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO268
Produkt ist nicht verfügbar
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IXFP60N25X3M pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A59820&compId=IXFP60N25X3M.pdf?ci_sign=313b25dbeb5aa4d0c3060d4a0514a7fa0f1de198
IXFP60N25X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.24 EUR
11+6.66 EUR
12+6.31 EUR
Mindestbestellmenge: 8
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IXTN210P10T pVersion=0046&contRep=ZT&docId=005056AB752F1EE797949FD586272748&compId=IXTN210P10T.pdf?ci_sign=c7eaa6ff621298b381d20e5aabc3375642501283
IXTN210P10T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Case: SOT227B
Semiconductor structure: single transistor
Technology: TrenchP™
Polarisation: unipolar
Pulsed drain current: -800A
Drain current: -210A
Drain-source voltage: -100V
Reverse recovery time: 200ns
Gate charge: 740nC
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 830W
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXTR210P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA04275137A38BF&compId=IXTR210P10T.pdf?ci_sign=6be69c09b119a4bc5566676e52a110aa09280e61
IXTR210P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Technology: TrenchP™
Polarisation: unipolar
Drain current: -195A
Drain-source voltage: -100V
Reverse recovery time: 200ns
Gate charge: 740nC
On-state resistance: 8mΩ
Gate-source voltage: ±15V
Power dissipation: 390W
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.6 EUR
30+31.39 EUR
Mindestbestellmenge: 3
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IXTX210P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03E7174C718BF&compId=IXTX210P10T.pdf?ci_sign=eb9be669937aaa10adc6b2be9042b5a5749257a3
IXTX210P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Technology: TrenchP™
Polarisation: unipolar
Drain current: -210A
Drain-source voltage: -100V
Reverse recovery time: 200ns
Gate charge: 740nC
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+30.26 EUR
10+29.1 EUR
Mindestbestellmenge: 3
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CPC1510G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004780C7&compId=CPC1510.pdf?ci_sign=dca2f490d390e88ab018824ec0cbe6d4e63b3e56
CPC1510G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Kind of output: MOSFET
Turn-off time: 2ms
Turn-on time: 2ms
On-state resistance: 15Ω
Contacts configuration: SPST-NO
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.86 EUR
23+3.22 EUR
24+3.03 EUR
Mindestbestellmenge: 19
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CPC1510GS pVersion=0046&contRep=ZT&docId=005056AB82531EE9958FDF2EB56DF8BF&compId=CPC1510.pdf?ci_sign=9749f199defe3add8fb64a51a16864787d36708b
CPC1510GS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.92 EUR
21+3.49 EUR
22+3.29 EUR
Mindestbestellmenge: 11
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DSEC16-12A DSEC16-12A.pdf
DSEC16-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W
Mounting: THT
Max. forward impulse current: 40A
Power dissipation: 60W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.94V
Load current: 8A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
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DSEC16-12AS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4F5F44C2260C4&compId=DSEC16-12AS.pdf?ci_sign=7fe88d45cfa69a339b55e2fa6635825aa1a7704b
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Mounting: SMD
Max. forward impulse current: 40A
Power dissipation: 60W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Case: D2PAK
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.96V
Load current: 8A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
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IXTQ120N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9109183E093E27&compId=IXTK120N20P-DTE.pdf?ci_sign=8d92652847182241575b90496cedc624b85642c3
IXTQ120N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Case: TO3P
Mounting: THT
Drain-source voltage: 200V
Drain current: 120A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Reverse recovery time: 180ns
Power dissipation: 714W
Polarisation: unipolar
Kind of package: tube
Gate charge: 152nC
Technology: PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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PLB190 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78
PLB190
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.38 EUR
14+5.13 EUR
15+4.85 EUR
50+4.76 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
PLB190S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78
PLB190S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.96 EUR
Mindestbestellmenge: 12
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PLB190STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Produkt ist nicht verfügbar
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IXTQ34N65X2M littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtq34n65x2m_datasheet.pdf?assetguid=9e2804bf-85d4-45e2-ba6f-de4ee48d3cec
IXTQ34N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.55 EUR
9+7.95 EUR
Mindestbestellmenge: 7
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IXTQ48N65X2M
IXTQ48N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.13 EUR
8+9.6 EUR
Mindestbestellmenge: 6
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IXFP60N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48077B3DDB820&compId=IXFA(P%2CQ)60N25X3.pdf?ci_sign=40bf31d6f48e6a29413d60f94152aaab04d45448
IXFP60N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 302 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.18 EUR
10+7.19 EUR
11+6.81 EUR
100+6.55 EUR
Mindestbestellmenge: 8
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IXFK102N30P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F945957269820&compId=IXFK102N30P.pdf?ci_sign=c151da4b07d5bf21f7c6dd2fd7ca83cee205a948
IXFK102N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Power dissipation: 700W
Case: TO264
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 224nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.99 EUR
5+14.3 EUR
Mindestbestellmenge: 4
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IXTH32N65X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC14A9F2EB3820&compId=IXTH(P%2CQ)32N65X.pdf?ci_sign=6a88174097b72279f3942c45d4c91b42e2da5718
IXTH32N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 169 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.12 EUR
11+6.54 EUR
12+6.19 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
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