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MCD162-16io1 MCD162-16io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FD6136CB9ABE143&compId=MCD162-16io1.pdf?ci_sign=0059e08e7eeb598895d2ad74edff6b821249c3b5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Kind of package: bulk
Max. load current: 300A
Gate current: 150/200mA
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
1+75.02 EUR
6+73.86 EUR
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CPC1001N CPC1001N IXYS 1 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4
CTR@If: 100-800%@0.2mA
Insulation voltage: 1.5kV
Kind of output: transistor
Number of channels: 1
Turn-off time: 30µs
Turn-on time: 1µs
Case: SOP4
Type of optocoupler: optocoupler
Mounting: SMD
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.62 EUR
53+1.36 EUR
80+0.89 EUR
85+0.85 EUR
Mindestbestellmenge: 45
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CPC1002N CPC1002N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995903E8B381558BF&compId=cpc1002n.pdf?ci_sign=59ca255b0e06b398b1d01aad9a01ac20bcce44dc Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Case: SOP4
On-state resistance: 0.55Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 700mA
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 60V DC
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Turn-on time: 5ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
auf Bestellung 1940 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.73 EUR
57+1.27 EUR
60+1.2 EUR
Mindestbestellmenge: 27
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CPC1002NTR CPC1002NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4918F5537E0C7&compId=CPC1002N.pdf?ci_sign=09d4db40bee1ae8a6b564a28716e29f2c573c468 Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Case: SOP4
Contacts configuration: SPST-NO
Max. operating current: 700mA
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 60V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
On-state resistance: 0.55Ω
Turn-on time: 5ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Produkt ist nicht verfügbar
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CPC1006N CPC1006N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42A60C7&compId=CPC1006N.pdf?ci_sign=72d41b7324042777116a851719d9e0f28d3ef419 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Case: SOP4
On-state resistance: 10Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 75mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Turn-on time: 10ms
Turn-off time: 10ms
Body dimensions: 4.09x3.81x2.03mm
auf Bestellung 2957 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.76 EUR
53+1.36 EUR
56+1.29 EUR
Mindestbestellmenge: 41
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CPC1009N CPC1009N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75020C7&compId=CPC1009N.pdf?ci_sign=f40f58f0e387932488df77283d620ba8e67b04b1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 0.5ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 8Ω
Case: SOP4
Mounting: SMT
auf Bestellung 368 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.77 EUR
47+1.53 EUR
51+1.42 EUR
54+1.34 EUR
Mindestbestellmenge: 41
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IXKR47N60C5 IXKR47N60C5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC791820&compId=IXKR47N60C5.pdf?ci_sign=4b58b847ed569ac779f2a40e73cfe499f7be0fab Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
4+21.75 EUR
Mindestbestellmenge: 4
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DSSK16-01AS DSSK16-01AS IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB5685A43C78BF&compId=DSSK16-01A.pdf?ci_sign=35827b5f37f5a6cfb99fe5eba93b91f91214ea59 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 8Ax2; reel,tape; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: reel; tape
Power dissipation: 90W
Produkt ist nicht verfügbar
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DSSK16-01A DSSK16-01A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB5685A43C78BF&compId=DSSK16-01A.pdf?ci_sign=35827b5f37f5a6cfb99fe5eba93b91f91214ea59 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8Ax2; TO220AB; Ufmax: 0.65V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
Mindestbestellmenge: 4
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IXA60IF1200NA IXA60IF1200NA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2C93212CC9820&compId=IXA60IF1200NA.pdf?ci_sign=f005dd90a5bbd4c174e2457adcfd338beb6074e0 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 56A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 56A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
Power dissipation: 290W
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
2+46.29 EUR
Mindestbestellmenge: 2
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IXDN75N120 IXDN75N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9888FC4531A0538BF&compId=IXDN75N120.pdf?ci_sign=06ae6ac4014868b47b0ab2941b0edc4f457b8058 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Power dissipation: 660W
Electrical mounting: screw
Mechanical mounting: screw
Technology: NPT
Type of semiconductor module: IGBT
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 190A
Produkt ist nicht verfügbar
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IXKC19N60C5 IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Reverse recovery time: 430ns
Produkt ist nicht verfügbar
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IXGA20N120A3 IXGA20N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364 Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
Technology: GenX3™; PT
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.41 EUR
12+6.03 EUR
13+5.71 EUR
100+5.49 EUR
Mindestbestellmenge: 7
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IXGA20N120B3 IXGA20N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABBDF3F92A3820&compId=IXGA(P)20N120B3.pdf?ci_sign=693eed04e1173248dc559ce9f74a6894b0b31c5f Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO263
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Turn-off time: 720ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 61ns
Produkt ist nicht verfügbar
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IXFQ140N20X3 IXFQ140N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.99 EUR
7+10.62 EUR
30+10.38 EUR
Mindestbestellmenge: 6
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IXFH22N65X2 IXFH22N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7E33E399F98BF&compId=IXF_22N65X2.pdf?ci_sign=0c8f69f0a301813161ad4a66663b73b0511fd05a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
auf Bestellung 226 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.26 EUR
14+5.18 EUR
15+4.89 EUR
Mindestbestellmenge: 10
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IXFP22N65X2 IXFP22N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7E33E399F98BF&compId=IXF_22N65X2.pdf?ci_sign=0c8f69f0a301813161ad4a66663b73b0511fd05a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.68 EUR
17+4.38 EUR
18+4.13 EUR
100+3.98 EUR
Mindestbestellmenge: 11
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IXFP22N65X2M IXFP22N65X2M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB2D04AD8BB8BF&compId=IXFP22N65X2M.pdf?ci_sign=641ab7467b1b0dee58df8d256bcf0bafa48e6d62 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 37W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Reverse recovery time: 145ns
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.23 EUR
20+3.62 EUR
21+3.42 EUR
100+3.33 EUR
Mindestbestellmenge: 12
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IXGR48N60C3D1 IXGR48N60C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF24C2C638B15EA&compId=IXGR48N60C3D1.pdf?ci_sign=e17ec10a0f325c156db32ed2b069899ee73c8d00 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 125W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector current: 26A
Pulsed collector current: 230A
Turn-on time: 45ns
Turn-off time: 187ns
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 364 Stücke:
Lieferzeit 14-21 Tag (e)
4+20.59 EUR
5+14.89 EUR
Mindestbestellmenge: 4
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IXXH40N65B4 IXXH40N65B4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA96CA2990ED820&compId=IXXH40N65B4.pdf?ci_sign=770ad629ceb326de1e544cb3d65c8b03a36c72c3 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Technology: GenX4™; Trench; XPT™
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.28 EUR
11+6.55 EUR
14+5.22 EUR
15+4.93 EUR
Mindestbestellmenge: 10
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IXXH40N65B4D1 IXXH40N65B4D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA96F577F355820&compId=IXXH40N65B4D1.pdf?ci_sign=4b16939ad77a5f052b6f636ad7b9f86dea9dc600 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXXH40N65B4H1 IXXH40N65B4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA97219726AF820&compId=IXXH40N65B4H1.pdf?ci_sign=1e60654719d923f15b053b37a83badb0a07ba890 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 207ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXXH40N65C4D1 IXXH40N65C4D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE5897875C79820&compId=IXXH40N65C4D1.pdf?ci_sign=e5472dd029b3deb15e95cd70a2d8eee474e6704d Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 142ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXFA16N60P3 IXFA16N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D52E81740A5820&compId=IXFA(H%2CP)16N60P3.pdf?ci_sign=5bf62970bec965613ad22cf903e4c096360d3162 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.92 EUR
Mindestbestellmenge: 25
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IXFP16N60P3 IXFP16N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D52E81740A5820&compId=IXFA(H%2CP)16N60P3.pdf?ci_sign=5bf62970bec965613ad22cf903e4c096360d3162 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.92 EUR
18+4.05 EUR
19+3.83 EUR
Mindestbestellmenge: 10
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IXFP76N15T2 IXFP76N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D41BF38A751820&compId=IXFA(H%2CP)76N15T2.pdf?ci_sign=e58b954c14aed23e6b59d6e696317db032e28994 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO220AB; 69ns
Mounting: THT
Drain current: 76A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 350W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 97nC
Kind of channel: enhancement
Case: TO220AB
Reverse recovery time: 69ns
Drain-source voltage: 150V
auf Bestellung 283 Stücke:
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IXDH20N120 IXDH20N120 IXYS pVersion=0046&contRep=ZT&docId=E29206428EEA27F19A99005056AB752F&compId=IXDH20N120_IXDH20N120D1.pdf?ci_sign=868beffbdc782c683957f60a286ccc2aecbc511a Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-off time: 570ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Turn-on time: 175ns
auf Bestellung 217 Stücke:
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12+6.09 EUR
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IXFK20N120P IXFK20N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A92D5F7781F8BF&compId=IXF_20N120P.pdf?ci_sign=f8c33191702a2a0a34deabac8302d8b29e2cedba Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: TO264
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFN20N120P IXFN20N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA8222A1DEF7820&compId=IXFN20N120P.pdf?ci_sign=d60c32441418226b7bbccc61b6c8e84fb8b4f901 Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 20A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 570mΩ
Pulsed drain current: 50A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 300ns
Gate charge: 193nC
auf Bestellung 27 Stücke:
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IXFR20N120P IXFR20N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B4B820&compId=IXFR20N120P.pdf?ci_sign=3ec4bae68a596108eefc3f91613f3b2a858b33a0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
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IXFX20N120P IXFX20N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A92D5F7781F8BF&compId=IXF_20N120P.pdf?ci_sign=f8c33191702a2a0a34deabac8302d8b29e2cedba Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 300ns
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IXGH20N120A3 IXGH20N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO247-3
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-off time: 1.53µs
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 120A
Turn-on time: 66ns
auf Bestellung 93 Stücke:
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IXGP20N120A3 IXGP20N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 50nC
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 120A
Turn-on time: 66ns
Turn-off time: 1.53µs
auf Bestellung 29 Stücke:
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IXGP20N120B3 IXGP20N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABBDF3F92A3820&compId=IXGA(P)20N120B3.pdf?ci_sign=693eed04e1173248dc559ce9f74a6894b0b31c5f Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 51nC
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 61ns
Turn-off time: 720ns
auf Bestellung 38 Stücke:
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IXYA20N120C3HV IXYA20N120C3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA262386AE78BF&compId=IXY_20N120C3_HV.pdf?ci_sign=69a66f2254c263ce93b6ce37d84ed69d8c442da0 Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 278W
Case: TO263-2
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-off time: 215ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 96A
Turn-on time: 60ns
Produkt ist nicht verfügbar
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IXYH20N120C3 IXYH20N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABCDC0A34F5820&compId=IXYH(P)20N120C3_HV.pdf?ci_sign=30885aa545e063da4e84233ac795b9469a3a4fce Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO247-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-off time: 0.22µs
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 96A
Turn-on time: 60ns
Produkt ist nicht verfügbar
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IXYH20N120C3D1 IXYH20N120C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9991A201638BF&compId=IXYH20N120C3D1.pdf?ci_sign=e120799112c6baf937977feba949005fd83421df Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-off time: 0.22µs
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 88A
Turn-on time: 60ns
auf Bestellung 281 Stücke:
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7+10.72 EUR
8+10.14 EUR
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IXYJ20N120C3D1 IXYS IXYJ20N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 105W
Case: TO247
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-off time: 90ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 21A
Pulsed collector current: 40A
Turn-on time: 20ns
Produkt ist nicht verfügbar
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IXYP20N120C3 IXYP20N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABCDC0A34F5820&compId=IXYH(P)20N120C3_HV.pdf?ci_sign=30885aa545e063da4e84233ac795b9469a3a4fce Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 53nC
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 96A
Turn-on time: 60ns
Turn-off time: 200ns
Produkt ist nicht verfügbar
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IXYT20N120C3D1HV IXYT20N120C3D1HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC5027B64E7820&compId=IXYT20N120C3D1HV.pdf?ci_sign=919d7cd0b29220ac3b93c7617f2b3fdc9d073e25 Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 230W
Case: TO268HV
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-off time: 0.22µs
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 17A
Pulsed collector current: 88A
Turn-on time: 60ns
Produkt ist nicht verfügbar
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DMA10IM1200UZ-TUB DMA10IM1200UZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB3FF864873A0C4&compId=DMA10IM1200UZ.pdf?ci_sign=c69ae3e6759cb51a2a11d0b62fcfeacc44ad1033 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 10A; TO252AA; Ufmax: 1.21V; Ifsm: 100A
Case: TO252AA
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.21V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Power dissipation: 100W
Type of diode: rectifying
Max. off-state voltage: 1.2kV
auf Bestellung 44 Stücke:
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31+2.35 EUR
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CPC1390G CPC1390G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320042C0C7&compId=CPC1390.pdf?ci_sign=02d27267f722e98ae1add0787a699a87ad053c38 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Mounting: THT
Operating temperature: -40...85°C
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 1ms
Body dimensions: 4.57x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Max. operating current: 140mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP4
auf Bestellung 463 Stücke:
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27+2.67 EUR
36+1.99 EUR
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CPC1390GR CPC1390GR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A41EA29340F8BF&compId=cpc1390.pdf?ci_sign=4ed09f212104e2f97cb38f2c56316cc428366b9d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 140mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Kind of output: MOSFET
Turn-off time: 1ms
Turn-on time: 1ms
On-state resistance: 22Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
auf Bestellung 435 Stücke:
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CPC1390GV CPC1390GV IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320042C0C7&compId=CPC1390.pdf?ci_sign=02d27267f722e98ae1add0787a699a87ad053c38 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 140mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Kind of output: MOSFET
Turn-off time: 1ms
Turn-on time: 1ms
On-state resistance: 22Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
auf Bestellung 450 Stücke:
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IXFH34N60X2A IXFH34N60X2A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2850059F7229820&compId=IXFH34N60X2A.pdf?ci_sign=670b82a0339a408baa8b89dce5ae98931a570f1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Pulsed drain current: 68A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Technology: HiPerFET™; X2-Class
Reverse recovery time: 164ns
Application: automotive industry
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2+35.75 EUR
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IXFK64N60Q3 IXFK64N60Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D463260E2E9820&compId=IXFK(X)64N60Q3.pdf?ci_sign=2b8a7c779d19716f7657570711d367d2c1aaefc9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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IXTP14N60X2 IXTP14N60X2 IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 16 Stücke:
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10+7.79 EUR
16+4.46 EUR
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IXXH30N60B3D1 IXXH30N60B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0EF4E1770591E27&compId=IXXH30N60B3D1-DTE.pdf?ci_sign=75d2af8a37123feddd1d882cb6506af0f88f6182 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Case: TO247AD
Mounting: THT
Kind of package: tube
Power dissipation: 270W
Gate charge: 39nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 115A
Turn-on time: 23ns
Turn-off time: 125ns
auf Bestellung 60 Stücke:
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10+7.15 EUR
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IXXN110N65B4H1 IXXN110N65B4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F3014ED0C9B820&compId=IXXN110N65B4H1.pdf?ci_sign=b28fc3aed32959875df04b4bf39ca4ce608cbe7c Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Power dissipation: 750W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 650V
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 110A
Pulsed collector current: 650A
Produkt ist nicht verfügbar
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IXXN110N65C4H1 IXXN110N65C4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F30564423ED820&compId=IXXN110N65C4H1.pdf?ci_sign=c9eb661bdd50eec71321e7879af73afec49776cd Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 650V
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 110A
Pulsed collector current: 470A
Produkt ist nicht verfügbar
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IXXR110N65B4H1 IXXR110N65B4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA2540B7AF3820&compId=IXXR110N65B4H1.pdf?ci_sign=5890856bd86011b903242c6fef3c7868545f561d Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 183nC
Gate-emitter voltage: ±20V
Collector current: 70A
Pulsed collector current: 490A
Turn-on time: 65ns
Turn-off time: 250ns
Produkt ist nicht verfügbar
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IXXX110N65B4H1 IXXX110N65B4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992DF299313CAB8BF&compId=IXX_110N65B4H1.pdf?ci_sign=138ddc32a5ddfa541fc19fa01c5429737b49acfd Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 183nC
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 570A
Turn-on time: 65ns
Turn-off time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH30N60P IXTH30N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDC0F215143820&compId=IXTH(Q%2CT%2CV)30N60P_S.pdf?ci_sign=23cb872edd8c988b4691a847d6364d4ee8eca206 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Reverse recovery time: 0.5µs
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.84 EUR
8+9.38 EUR
9+8.88 EUR
Mindestbestellmenge: 6
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IXTQ30N60L2 IXTQ30N60L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993961825E677F8BF&compId=IXT_30N60L2.pdf?ci_sign=a187da0396ffeb0ca9f228226b1261de24fac5f0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ30N60P IXTQ30N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDC0F215143820&compId=IXTH(Q%2CT%2CV)30N60P_S.pdf?ci_sign=23cb872edd8c988b4691a847d6364d4ee8eca206 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTT30N60L2 IXTT30N60L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993961825E677F8BF&compId=IXT_30N60L2.pdf?ci_sign=a187da0396ffeb0ca9f228226b1261de24fac5f0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 540W
Gate charge: 335nC
Technology: Linear L2™
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTT30N60P IXTT30N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDC0F215143820&compId=IXTH(Q%2CT%2CV)30N60P_S.pdf?ci_sign=23cb872edd8c988b4691a847d6364d4ee8eca206 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXXH30N60C3D1 IXXH30N60C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA0640C0AE3820&compId=IXXH30N60C3D1.pdf?ci_sign=acb988c96b71486701945515382354c24866b822 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 270W
Gate charge: 37nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 110A
Turn-on time: 37ns
Turn-off time: 166ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXXQ30N60B3M IXXQ30N60B3M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE7ECB7A14AD820&compId=IXXQ30N60B3M.pdf?ci_sign=a883fe68cd02608d671c8106875dd32cd7167cad Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Case: TO3PF
Mounting: THT
Kind of package: tube
Power dissipation: 90W
Gate charge: 39nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 19A
Pulsed collector current: 140A
Turn-on time: 57ns
Turn-off time: 292ns
Produkt ist nicht verfügbar
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IXFX55N50 IXFX55N50 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A95C294BFDB8BF&compId=IXFX50N50_IXFX55N50.pdf?ci_sign=9823f069cf4013329e963cbfdae0e3ff065e6ff0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 55A; 520W; PLUS247™; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Power dissipation: 520W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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MCD162-16io1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FD6136CB9ABE143&compId=MCD162-16io1.pdf?ci_sign=0059e08e7eeb598895d2ad74edff6b821249c3b5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCD162-16io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Kind of package: bulk
Max. load current: 300A
Gate current: 150/200mA
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+75.02 EUR
6+73.86 EUR
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CPC1001N 1
CPC1001N
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4
CTR@If: 100-800%@0.2mA
Insulation voltage: 1.5kV
Kind of output: transistor
Number of channels: 1
Turn-off time: 30µs
Turn-on time: 1µs
Case: SOP4
Type of optocoupler: optocoupler
Mounting: SMD
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
53+1.36 EUR
80+0.89 EUR
85+0.85 EUR
Mindestbestellmenge: 45
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CPC1002N pVersion=0046&contRep=ZT&docId=005056AB82531EE995903E8B381558BF&compId=cpc1002n.pdf?ci_sign=59ca255b0e06b398b1d01aad9a01ac20bcce44dc
CPC1002N
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Case: SOP4
On-state resistance: 0.55Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 700mA
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 60V DC
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Turn-on time: 5ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
auf Bestellung 1940 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.73 EUR
57+1.27 EUR
60+1.2 EUR
Mindestbestellmenge: 27
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CPC1002NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4918F5537E0C7&compId=CPC1002N.pdf?ci_sign=09d4db40bee1ae8a6b564a28716e29f2c573c468
CPC1002NTR
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Case: SOP4
Contacts configuration: SPST-NO
Max. operating current: 700mA
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 60V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
On-state resistance: 0.55Ω
Turn-on time: 5ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Produkt ist nicht verfügbar
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CPC1006N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42A60C7&compId=CPC1006N.pdf?ci_sign=72d41b7324042777116a851719d9e0f28d3ef419
CPC1006N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Case: SOP4
On-state resistance: 10Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 75mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Turn-on time: 10ms
Turn-off time: 10ms
Body dimensions: 4.09x3.81x2.03mm
auf Bestellung 2957 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.76 EUR
53+1.36 EUR
56+1.29 EUR
Mindestbestellmenge: 41
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CPC1009N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75020C7&compId=CPC1009N.pdf?ci_sign=f40f58f0e387932488df77283d620ba8e67b04b1
CPC1009N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 0.5ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 8Ω
Case: SOP4
Mounting: SMT
auf Bestellung 368 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
47+1.53 EUR
51+1.42 EUR
54+1.34 EUR
Mindestbestellmenge: 41
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IXKR47N60C5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC791820&compId=IXKR47N60C5.pdf?ci_sign=4b58b847ed569ac779f2a40e73cfe499f7be0fab
IXKR47N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.75 EUR
Mindestbestellmenge: 4
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DSSK16-01AS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB5685A43C78BF&compId=DSSK16-01A.pdf?ci_sign=35827b5f37f5a6cfb99fe5eba93b91f91214ea59
DSSK16-01AS
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 8Ax2; reel,tape; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: reel; tape
Power dissipation: 90W
Produkt ist nicht verfügbar
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DSSK16-01A pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB5685A43C78BF&compId=DSSK16-01A.pdf?ci_sign=35827b5f37f5a6cfb99fe5eba93b91f91214ea59
DSSK16-01A
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8Ax2; TO220AB; Ufmax: 0.65V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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IXA60IF1200NA pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2C93212CC9820&compId=IXA60IF1200NA.pdf?ci_sign=f005dd90a5bbd4c174e2457adcfd338beb6074e0
IXA60IF1200NA
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 56A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 56A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
Power dissipation: 290W
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+46.29 EUR
Mindestbestellmenge: 2
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IXDN75N120 pVersion=0046&contRep=ZT&docId=005056AB82531EE9888FC4531A0538BF&compId=IXDN75N120.pdf?ci_sign=06ae6ac4014868b47b0ab2941b0edc4f457b8058
IXDN75N120
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Power dissipation: 660W
Electrical mounting: screw
Mechanical mounting: screw
Technology: NPT
Type of semiconductor module: IGBT
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 190A
Produkt ist nicht verfügbar
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IXKC19N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Reverse recovery time: 430ns
Produkt ist nicht verfügbar
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IXGA20N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364
IXGA20N120A3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
Technology: GenX3™; PT
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.41 EUR
12+6.03 EUR
13+5.71 EUR
100+5.49 EUR
Mindestbestellmenge: 7
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IXGA20N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABBDF3F92A3820&compId=IXGA(P)20N120B3.pdf?ci_sign=693eed04e1173248dc559ce9f74a6894b0b31c5f
IXGA20N120B3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO263
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Turn-off time: 720ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 61ns
Produkt ist nicht verfügbar
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IXFQ140N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFQ140N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.99 EUR
7+10.62 EUR
30+10.38 EUR
Mindestbestellmenge: 6
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IXFH22N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7E33E399F98BF&compId=IXF_22N65X2.pdf?ci_sign=0c8f69f0a301813161ad4a66663b73b0511fd05a
IXFH22N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
auf Bestellung 226 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.26 EUR
14+5.18 EUR
15+4.89 EUR
Mindestbestellmenge: 10
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IXFP22N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7E33E399F98BF&compId=IXF_22N65X2.pdf?ci_sign=0c8f69f0a301813161ad4a66663b73b0511fd05a
IXFP22N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.68 EUR
17+4.38 EUR
18+4.13 EUR
100+3.98 EUR
Mindestbestellmenge: 11
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IXFP22N65X2M pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB2D04AD8BB8BF&compId=IXFP22N65X2M.pdf?ci_sign=641ab7467b1b0dee58df8d256bcf0bafa48e6d62
IXFP22N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 37W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Reverse recovery time: 145ns
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.23 EUR
20+3.62 EUR
21+3.42 EUR
100+3.33 EUR
Mindestbestellmenge: 12
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IXGR48N60C3D1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF24C2C638B15EA&compId=IXGR48N60C3D1.pdf?ci_sign=e17ec10a0f325c156db32ed2b069899ee73c8d00
IXGR48N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 125W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector current: 26A
Pulsed collector current: 230A
Turn-on time: 45ns
Turn-off time: 187ns
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 364 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.59 EUR
5+14.89 EUR
Mindestbestellmenge: 4
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IXXH40N65B4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA96CA2990ED820&compId=IXXH40N65B4.pdf?ci_sign=770ad629ceb326de1e544cb3d65c8b03a36c72c3
IXXH40N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Technology: GenX4™; Trench; XPT™
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.28 EUR
11+6.55 EUR
14+5.22 EUR
15+4.93 EUR
Mindestbestellmenge: 10
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IXXH40N65B4D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA96F577F355820&compId=IXXH40N65B4D1.pdf?ci_sign=4b16939ad77a5f052b6f636ad7b9f86dea9dc600
IXXH40N65B4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXXH40N65B4H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA97219726AF820&compId=IXXH40N65B4H1.pdf?ci_sign=1e60654719d923f15b053b37a83badb0a07ba890
IXXH40N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 207ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXXH40N65C4D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE5897875C79820&compId=IXXH40N65C4D1.pdf?ci_sign=e5472dd029b3deb15e95cd70a2d8eee474e6704d
IXXH40N65C4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 142ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXFA16N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D52E81740A5820&compId=IXFA(H%2CP)16N60P3.pdf?ci_sign=5bf62970bec965613ad22cf903e4c096360d3162
IXFA16N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.92 EUR
Mindestbestellmenge: 25
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IXFP16N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D52E81740A5820&compId=IXFA(H%2CP)16N60P3.pdf?ci_sign=5bf62970bec965613ad22cf903e4c096360d3162
IXFP16N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.92 EUR
18+4.05 EUR
19+3.83 EUR
Mindestbestellmenge: 10
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IXFP76N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D41BF38A751820&compId=IXFA(H%2CP)76N15T2.pdf?ci_sign=e58b954c14aed23e6b59d6e696317db032e28994
IXFP76N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO220AB; 69ns
Mounting: THT
Drain current: 76A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 350W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 97nC
Kind of channel: enhancement
Case: TO220AB
Reverse recovery time: 69ns
Drain-source voltage: 150V
auf Bestellung 283 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.08 EUR
19+3.96 EUR
20+3.75 EUR
250+3.6 EUR
Mindestbestellmenge: 12
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IXDH20N120 pVersion=0046&contRep=ZT&docId=E29206428EEA27F19A99005056AB752F&compId=IXDH20N120_IXDH20N120D1.pdf?ci_sign=868beffbdc782c683957f60a286ccc2aecbc511a
IXDH20N120
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-off time: 570ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Turn-on time: 175ns
auf Bestellung 217 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.51 EUR
12+6.09 EUR
13+5.76 EUR
Mindestbestellmenge: 9
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IXFK20N120P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A92D5F7781F8BF&compId=IXF_20N120P.pdf?ci_sign=f8c33191702a2a0a34deabac8302d8b29e2cedba
IXFK20N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: TO264
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFN20N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA8222A1DEF7820&compId=IXFN20N120P.pdf?ci_sign=d60c32441418226b7bbccc61b6c8e84fb8b4f901
IXFN20N120P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 20A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 570mΩ
Pulsed drain current: 50A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 300ns
Gate charge: 193nC
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.06 EUR
Mindestbestellmenge: 4
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IXFR20N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B4B820&compId=IXFR20N120P.pdf?ci_sign=3ec4bae68a596108eefc3f91613f3b2a858b33a0
IXFR20N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+26.98 EUR
30+26.08 EUR
Mindestbestellmenge: 3
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IXFX20N120P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A92D5F7781F8BF&compId=IXF_20N120P.pdf?ci_sign=f8c33191702a2a0a34deabac8302d8b29e2cedba
IXFX20N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 300ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXGH20N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364
IXGH20N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO247-3
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-off time: 1.53µs
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 120A
Turn-on time: 66ns
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.27 EUR
12+6.28 EUR
13+5.93 EUR
Mindestbestellmenge: 7
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IXGP20N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364
IXGP20N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 50nC
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 120A
Turn-on time: 66ns
Turn-off time: 1.53µs
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.05 EUR
15+4.86 EUR
16+4.6 EUR
Mindestbestellmenge: 8
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IXGP20N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABBDF3F92A3820&compId=IXGA(P)20N120B3.pdf?ci_sign=693eed04e1173248dc559ce9f74a6894b0b31c5f
IXGP20N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 51nC
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 61ns
Turn-off time: 720ns
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.88 EUR
15+4.86 EUR
16+4.6 EUR
Mindestbestellmenge: 8
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IXYA20N120C3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA262386AE78BF&compId=IXY_20N120C3_HV.pdf?ci_sign=69a66f2254c263ce93b6ce37d84ed69d8c442da0
IXYA20N120C3HV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 278W
Case: TO263-2
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-off time: 215ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 96A
Turn-on time: 60ns
Produkt ist nicht verfügbar
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IXYH20N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABCDC0A34F5820&compId=IXYH(P)20N120C3_HV.pdf?ci_sign=30885aa545e063da4e84233ac795b9469a3a4fce
IXYH20N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO247-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-off time: 0.22µs
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 96A
Turn-on time: 60ns
Produkt ist nicht verfügbar
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IXYH20N120C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9991A201638BF&compId=IXYH20N120C3D1.pdf?ci_sign=e120799112c6baf937977feba949005fd83421df
IXYH20N120C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-off time: 0.22µs
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 88A
Turn-on time: 60ns
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.72 EUR
8+10.14 EUR
30+10.02 EUR
120+9.75 EUR
Mindestbestellmenge: 7
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IXYJ20N120C3D1 IXYJ20N120C3D1.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 105W
Case: TO247
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-off time: 90ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 21A
Pulsed collector current: 40A
Turn-on time: 20ns
Produkt ist nicht verfügbar
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IXYP20N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABCDC0A34F5820&compId=IXYH(P)20N120C3_HV.pdf?ci_sign=30885aa545e063da4e84233ac795b9469a3a4fce
IXYP20N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 53nC
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 96A
Turn-on time: 60ns
Turn-off time: 200ns
Produkt ist nicht verfügbar
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IXYT20N120C3D1HV pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC5027B64E7820&compId=IXYT20N120C3D1HV.pdf?ci_sign=919d7cd0b29220ac3b93c7617f2b3fdc9d073e25
IXYT20N120C3D1HV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 230W
Case: TO268HV
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-off time: 0.22µs
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 17A
Pulsed collector current: 88A
Turn-on time: 60ns
Produkt ist nicht verfügbar
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DMA10IM1200UZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB3FF864873A0C4&compId=DMA10IM1200UZ.pdf?ci_sign=c69ae3e6759cb51a2a11d0b62fcfeacc44ad1033
DMA10IM1200UZ-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 10A; TO252AA; Ufmax: 1.21V; Ifsm: 100A
Case: TO252AA
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.21V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Power dissipation: 100W
Type of diode: rectifying
Max. off-state voltage: 1.2kV
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.35 EUR
44+1.63 EUR
Mindestbestellmenge: 31
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CPC1390G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320042C0C7&compId=CPC1390.pdf?ci_sign=02d27267f722e98ae1add0787a699a87ad053c38
CPC1390G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Mounting: THT
Operating temperature: -40...85°C
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 1ms
Body dimensions: 4.57x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Max. operating current: 140mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP4
auf Bestellung 463 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.67 EUR
36+1.99 EUR
39+1.87 EUR
Mindestbestellmenge: 27
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CPC1390GR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A41EA29340F8BF&compId=cpc1390.pdf?ci_sign=4ed09f212104e2f97cb38f2c56316cc428366b9d
CPC1390GR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 140mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Kind of output: MOSFET
Turn-off time: 1ms
Turn-on time: 1ms
On-state resistance: 22Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.78 EUR
37+1.97 EUR
39+1.87 EUR
Mindestbestellmenge: 19
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CPC1390GV pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320042C0C7&compId=CPC1390.pdf?ci_sign=02d27267f722e98ae1add0787a699a87ad053c38
CPC1390GV
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 140mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Kind of output: MOSFET
Turn-off time: 1ms
Turn-on time: 1ms
On-state resistance: 22Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.59 EUR
35+2.04 EUR
38+1.93 EUR
Mindestbestellmenge: 20
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IXFH34N60X2A pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2850059F7229820&compId=IXFH34N60X2A.pdf?ci_sign=670b82a0339a408baa8b89dce5ae98931a570f1b
IXFH34N60X2A
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Pulsed drain current: 68A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Technology: HiPerFET™; X2-Class
Reverse recovery time: 164ns
Application: automotive industry
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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IXFK64N60Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D463260E2E9820&compId=IXFK(X)64N60Q3.pdf?ci_sign=2b8a7c779d19716f7657570711d367d2c1aaefc9
IXFK64N60Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.26 EUR
Mindestbestellmenge: 5
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IXTP14N60X2 littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTP14N60X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.79 EUR
16+4.46 EUR
Mindestbestellmenge: 10
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IXXH30N60B3D1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0EF4E1770591E27&compId=IXXH30N60B3D1-DTE.pdf?ci_sign=75d2af8a37123feddd1d882cb6506af0f88f6182
IXXH30N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Case: TO247AD
Mounting: THT
Kind of package: tube
Power dissipation: 270W
Gate charge: 39nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 115A
Turn-on time: 23ns
Turn-off time: 125ns
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
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IXXN110N65B4H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F3014ED0C9B820&compId=IXXN110N65B4H1.pdf?ci_sign=b28fc3aed32959875df04b4bf39ca4ce608cbe7c
IXXN110N65B4H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Power dissipation: 750W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 650V
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 110A
Pulsed collector current: 650A
Produkt ist nicht verfügbar
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IXXN110N65C4H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F30564423ED820&compId=IXXN110N65C4H1.pdf?ci_sign=c9eb661bdd50eec71321e7879af73afec49776cd
IXXN110N65C4H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 650V
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 110A
Pulsed collector current: 470A
Produkt ist nicht verfügbar
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IXXR110N65B4H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA2540B7AF3820&compId=IXXR110N65B4H1.pdf?ci_sign=5890856bd86011b903242c6fef3c7868545f561d
IXXR110N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 183nC
Gate-emitter voltage: ±20V
Collector current: 70A
Pulsed collector current: 490A
Turn-on time: 65ns
Turn-off time: 250ns
Produkt ist nicht verfügbar
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IXXX110N65B4H1 pVersion=0046&contRep=ZT&docId=005056AB82531EE992DF299313CAB8BF&compId=IXX_110N65B4H1.pdf?ci_sign=138ddc32a5ddfa541fc19fa01c5429737b49acfd
IXXX110N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 183nC
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 570A
Turn-on time: 65ns
Turn-off time: 250ns
Produkt ist nicht verfügbar
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IXTH30N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDC0F215143820&compId=IXTH(Q%2CT%2CV)30N60P_S.pdf?ci_sign=23cb872edd8c988b4691a847d6364d4ee8eca206
IXTH30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Reverse recovery time: 0.5µs
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.84 EUR
8+9.38 EUR
9+8.88 EUR
Mindestbestellmenge: 6
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IXTQ30N60L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993961825E677F8BF&compId=IXT_30N60L2.pdf?ci_sign=a187da0396ffeb0ca9f228226b1261de24fac5f0
IXTQ30N60L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
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IXTQ30N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDC0F215143820&compId=IXTH(Q%2CT%2CV)30N60P_S.pdf?ci_sign=23cb872edd8c988b4691a847d6364d4ee8eca206
IXTQ30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTT30N60L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993961825E677F8BF&compId=IXT_30N60L2.pdf?ci_sign=a187da0396ffeb0ca9f228226b1261de24fac5f0
IXTT30N60L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 540W
Gate charge: 335nC
Technology: Linear L2™
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
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IXTT30N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDC0F215143820&compId=IXTH(Q%2CT%2CV)30N60P_S.pdf?ci_sign=23cb872edd8c988b4691a847d6364d4ee8eca206
IXTT30N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXXH30N60C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA0640C0AE3820&compId=IXXH30N60C3D1.pdf?ci_sign=acb988c96b71486701945515382354c24866b822
IXXH30N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 270W
Gate charge: 37nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 110A
Turn-on time: 37ns
Turn-off time: 166ns
Produkt ist nicht verfügbar
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IXXQ30N60B3M pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE7ECB7A14AD820&compId=IXXQ30N60B3M.pdf?ci_sign=a883fe68cd02608d671c8106875dd32cd7167cad
IXXQ30N60B3M
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Case: TO3PF
Mounting: THT
Kind of package: tube
Power dissipation: 90W
Gate charge: 39nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 19A
Pulsed collector current: 140A
Turn-on time: 57ns
Turn-off time: 292ns
Produkt ist nicht verfügbar
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IXFX55N50 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A95C294BFDB8BF&compId=IXFX50N50_IXFX55N50.pdf?ci_sign=9823f069cf4013329e963cbfdae0e3ff065e6ff0
IXFX55N50
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 55A; 520W; PLUS247™; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Power dissipation: 520W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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