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IXTA08N100D2 IXTA08N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D5010345B820&compId=IXTA(P%2CY)08N100D2.pdf?ci_sign=ff8d8aff111d8414478644545169c45d10c4ed47 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 325nC
auf Bestellung 300 Stücke:
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18+4.15 EUR
21+3.52 EUR
26+2.79 EUR
50+2.12 EUR
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IXFL38N100P IXFL38N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F95474BA0D820&compId=IXFL38N100P.pdf?ci_sign=94929944ea010461ba73f32c37d8eedfcfafaddd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 29A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 29A
Power dissipation: 520W
Case: ISOPLUS i5-pac™
On-state resistance: 0.23Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.35µC
auf Bestellung 25 Stücke:
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5+15.56 EUR
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IXFR24N100Q3 IXFR24N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B8D820&compId=IXFR24N100Q3.pdf?ci_sign=ca4e72774d87e585c7a699e877221fe57b34009d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 0.49Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.14µC
auf Bestellung 20 Stücke:
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2+41.03 EUR
3+36.99 EUR
10+32.59 EUR
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IXFB44N100P IXFB44N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED47B1C40012A18&compId=IXFB44N100P.pdf?ci_sign=fe6581ef286df05fe0b0acd958d2ed414c5337a2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Gate charge: 305nC
auf Bestellung 33 Stücke:
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3+32.03 EUR
5+29.42 EUR
25+27.1 EUR
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IXFP4N100PM IXFP4N100PM IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A284F48771C1F820&compId=IXFP4N100PM.pdf?ci_sign=1ef0c0309d4cc2d6be2edb57ccec12bf05151bb4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.1A
Pulsed drain current: 8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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IXFA230N075T2-7 IXFA230N075T2-7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9405C15EB820&compId=IXFA230N075T2-7.pdf?ci_sign=1b2d5f843fc07ea895f6f33fcdd57b9553e3c1a9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 59ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 13 Stücke:
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9+8.41 EUR
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CPC1125N CPC1125N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20B60C7&compId=CPC1125N.pdf?ci_sign=37beec7290e33484c75fff726185ce9ab1651de2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CS22-12IO1M CS22-12IO1M IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B39BD91F287CDE28&compId=CS22-12IO1M-DTE.pdf?ci_sign=7059b06fb11b31f481f0878b05422bdcb307ce1a Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 25A; 16A; Igt: 30mA; TO220FP; THT; tube
Max. off-state voltage: 1.2kV
Load current: 16A
Case: TO220FP
Mounting: THT
Max. load current: 25A
Max. forward impulse current: 0.3kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30mA
auf Bestellung 458 Stücke:
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21+3.46 EUR
25+2.86 EUR
50+2.17 EUR
100+2 EUR
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CS30-12IO1 CS30-12IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C4E460781E27&compId=CS30-12IO1-DTE.pdf?ci_sign=e71831bbd611d0d403ce659e4ecabb1a51f3954c Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO247AD
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 55mA
auf Bestellung 252 Stücke:
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10+7.58 EUR
16+4.63 EUR
30+4.56 EUR
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CLA5E1200UC-TRL CLA5E1200UC-TRL IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF06F8B3A4538BF&compId=CLA5E1200UC.pdf?ci_sign=7886f252147582f7a20d6fad18da76decb7917c7 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; DPAK; SMD; tube
Max. off-state voltage: 1.2kV
Load current: 5A
Case: DPAK
Mounting: SMD
Max. load current: 7.8A
Max. forward impulse current: 60A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
auf Bestellung 2224 Stücke:
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29+2.55 EUR
31+2.33 EUR
32+2.29 EUR
100+2.13 EUR
250+2.03 EUR
500+1.82 EUR
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CLA30E1200PB CLA30E1200PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEFEC36F01A38BF&compId=CLA30E1200PB.pdf?ci_sign=d383d2f8fbaa84679fa1f0485503906033c4eae7 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO220AB
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
auf Bestellung 176 Stücke:
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15+4.78 EUR
20+3.76 EUR
23+3.25 EUR
27+2.69 EUR
50+2.6 EUR
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CLF20E1200PB CLF20E1200PB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA9952EC35D40C0C7&compId=CLF20E1200PB.pdf?ci_sign=259617a1c258254612c9ab39e81daa6420058592 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 55mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 20A
Case: TO220AB
Mounting: THT
Max. load current: 31A
Max. forward impulse current: 175A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 55mA
auf Bestellung 57 Stücke:
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16+4.48 EUR
22+3.37 EUR
50+2.86 EUR
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CLA30E1200HB CLA30E1200HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFAC10EF225820&compId=CLA30E1200HB.pdf?ci_sign=5ea43205d611045b998b73b0dfda412ae9b80fe1 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 28mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO247AD
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 0.3kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 28mA
auf Bestellung 6 Stücke:
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6+11.91 EUR
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CLB30I1200PZ-TUB CLB30I1200PZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5BF9A635F80C4&compId=CLB30I1200PZ.pdf?ci_sign=a1f9b4639a575365c028e15a3311ad9611b93dcf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO263ABHV
Mounting: SMD
Max. load current: 47A
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
auf Bestellung 25 Stücke:
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20+3.75 EUR
22+3.36 EUR
25+2.96 EUR
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CLA40E1200HR CLA40E1200HR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB55076DADEE0C4&compId=CLA40E1200HR.pdf?ci_sign=81b17d8fccd5f58e2866df768188a420f4102207 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Max. off-state voltage: 1.2kV
Load current: 40A
Case: ISO247™
Mounting: THT
Max. load current: 63A
Max. forward impulse current: 555A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
auf Bestellung 40 Stücke:
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6+12.34 EUR
7+11.43 EUR
10+9.51 EUR
30+8.69 EUR
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MEK250-12DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Type of semiconductor module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 1.2kV
Load current: 260A
Case: Y4-M6
Max. forward voltage: 1.54V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFN64N60P IXFN64N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF97E62CB569820&compId=IXFN64N60P.pdf?ci_sign=5337465655f291d661ef9e1d6e80c564eef352dc description Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 96mΩ
Gate charge: 200nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXFX64N60P3 IXFX64N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB0ABA0A0DD8BF&compId=IXF_64N60P3.pdf?ci_sign=a8ce04ebb208e064f869f0d2ea995cec98534685 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK64N60P IXFK64N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BBFE33F23C1820&compId=IXFK(X)64N60P.pdf?ci_sign=72bec012642347b0204adb069da5fad2f328c04f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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IXFR64N60P IXFR64N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC5CF820&compId=IXFR64N60P.pdf?ci_sign=a5ddf5810bd4633ad4f2915f9b84a8516788d93e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX64N60P IXFX64N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BBFE33F23C1820&compId=IXFK(X)64N60P.pdf?ci_sign=72bec012642347b0204adb069da5fad2f328c04f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFN82N60P IXFN82N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C7A165E0998BF&compId=IXFN82N60P.pdf?ci_sign=0609a250046cc3b3184e0f9e8a1cec155172d322 description Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 72A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 75mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Pulsed drain current: 200A
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXFQ22N60P3 IXFQ22N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD15F39AD0B820&compId=IXFA(H%2CP%2CQ)22N60P3.pdf?ci_sign=977341036c5ff8f78f3d2b3abaff361a11b4088e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO3P
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTQ22N60P IXTQ22N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE987DF99DA4B2358BF&compId=IXTQ22N60P.pdf?ci_sign=a9e8633f155efa548c5fb2c6d491c1d7e8a3fc27 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXFH42N60P3 IXFH42N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F79820&compId=IXFH42N60P3.pdf?ci_sign=2290d2eee92156c5a1711cfb89d3bcb1b88db4cc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IX2127G IX2127G IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85F670F3CC58BF&compId=IX2127.pdf?ci_sign=38a8b7c0bf9e260942cd93345172f63defde3c14 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Output current: -500...250mA
Mounting: THT
Number of channels: 1
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 9...12V
Kind of package: tube
Voltage class: 600V
auf Bestellung 225 Stücke:
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90+0.8 EUR
Mindestbestellmenge: 90
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IX2127N IX2127N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85F670F3CC58BF&compId=IX2127.pdf?ci_sign=38a8b7c0bf9e260942cd93345172f63defde3c14 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Output current: -500...250mA
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 9...12V
Kind of package: tube
Voltage class: 600V
auf Bestellung 825 Stücke:
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82+0.87 EUR
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LBA716S LBA716S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4F258929B38BF&compId=lba716.pdf?ci_sign=d45d468b46d147689665005b9ee4dfd3cf1d6094 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.07 EUR
10+8.49 EUR
50+6.88 EUR
100+6.54 EUR
Mindestbestellmenge: 8
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IXFP7N100P IXFP7N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEC13C244BC98BF&compId=IXF_7N100P.pdf?ci_sign=098a71bb06e557089a0d1511de1a94a0bc177181 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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DSA120X200LB-TUB DSA120X200LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C8E21202C2B8BF&compId=DSA120X200LB.pdf?ci_sign=cade504b715789123a9bc4b1a6fe7bb93fd83604 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; tube; 185W
Semiconductor structure: double independent
Case: SMPD
Mounting: SMD
Type of diode: Schottky rectifying
Power dissipation: 185W
Max. forward voltage: 0.67V
Max. off-state voltage: 200V
Load current: 65A x2
Max. forward impulse current: 700A
Kind of package: tube
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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IXFN140N30P IXFN140N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF909B1E4561820&compId=IXFN140N30P.pdf?ci_sign=2b393dfec7ce74f333dc9621ba59a1ebed6ea252 description Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 24mΩ
Pulsed drain current: 300A
Power dissipation: 700W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 185nC
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
2+42.03 EUR
5+36.12 EUR
10+34.91 EUR
Mindestbestellmenge: 2
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DSSK50-015A DSSK50-015A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CBA66F9B4258BF&compId=DSSK50-015A.pdf?ci_sign=ab1a501bd233c2ac65940608a5bcbedc2d1e1d8e Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; TO247-3; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.68V
Max. forward impulse current: 0.45kA
Power dissipation: 135W
Kind of package: tube
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.88 EUR
14+5.21 EUR
16+4.76 EUR
Mindestbestellmenge: 13
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DSSK50-01A DSSK50-01A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CBA9C5A1EF58BF&compId=DSSK50-01A.pdf?ci_sign=e9423c14aa2226699a302afb9f9e202d790a5f31 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.65V
Max. forward impulse current: 0.45kA
Power dissipation: 135W
Kind of package: tube
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.51 EUR
Mindestbestellmenge: 13
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DSSK50-0025B DSSK50-0025B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CBA2F7DE4FB8BF&compId=DSSK50-0025B.pdf?ci_sign=58875aab095e22171b444b48bf7e6c2161a9a26d Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25Ax2; TO247-3; Ufmax: 0.42V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.42V
Max. forward impulse current: 330A
Power dissipation: 90W
Kind of package: tube
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.76 EUR
Mindestbestellmenge: 19
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IXDN609YI IXDN609YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 814 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.69 EUR
23+3.12 EUR
50+2.65 EUR
100+2.49 EUR
Mindestbestellmenge: 20
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IXDN602SI IXDN602SI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
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IXDN602SIATR IXDN602SIATR IXYS littelfuse-integrated-circuits-ixd-602-datasheet?assetguid=75d5db43-b768-4a16-b76f-c3313dc04096 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
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IXDN602SITR IXYS littelfuse-integrated-circuits-ixd-602-datasheet?assetguid=75d5db43-b768-4a16-b76f-c3313dc04096 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
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IXTA08N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D5010345B820&compId=IXTA(P%2CY)08N100D2.pdf?ci_sign=ff8d8aff111d8414478644545169c45d10c4ed47
IXTA08N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 325nC
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.15 EUR
21+3.52 EUR
26+2.79 EUR
50+2.12 EUR
Mindestbestellmenge: 18
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IXFL38N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F95474BA0D820&compId=IXFL38N100P.pdf?ci_sign=94929944ea010461ba73f32c37d8eedfcfafaddd
IXFL38N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 29A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 29A
Power dissipation: 520W
Case: ISOPLUS i5-pac™
On-state resistance: 0.23Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.35µC
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.56 EUR
Mindestbestellmenge: 5
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IXFR24N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B8D820&compId=IXFR24N100Q3.pdf?ci_sign=ca4e72774d87e585c7a699e877221fe57b34009d
IXFR24N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 0.49Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.14µC
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+41.03 EUR
3+36.99 EUR
10+32.59 EUR
Mindestbestellmenge: 2
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IXFB44N100P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED47B1C40012A18&compId=IXFB44N100P.pdf?ci_sign=fe6581ef286df05fe0b0acd958d2ed414c5337a2
IXFB44N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Gate charge: 305nC
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.03 EUR
5+29.42 EUR
25+27.1 EUR
Mindestbestellmenge: 3
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IXFP4N100PM pVersion=0046&contRep=ZT&docId=005056AB82531ED9A284F48771C1F820&compId=IXFP4N100PM.pdf?ci_sign=1ef0c0309d4cc2d6be2edb57ccec12bf05151bb4
IXFP4N100PM
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.1A
Pulsed drain current: 8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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IXFA230N075T2-7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9405C15EB820&compId=IXFA230N075T2-7.pdf?ci_sign=1b2d5f843fc07ea895f6f33fcdd57b9553e3c1a9
IXFA230N075T2-7
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 59ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.41 EUR
Mindestbestellmenge: 9
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CPC1125N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20B60C7&compId=CPC1125N.pdf?ci_sign=37beec7290e33484c75fff726185ce9ab1651de2
CPC1125N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CS22-12IO1M pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B39BD91F287CDE28&compId=CS22-12IO1M-DTE.pdf?ci_sign=7059b06fb11b31f481f0878b05422bdcb307ce1a
CS22-12IO1M
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 25A; 16A; Igt: 30mA; TO220FP; THT; tube
Max. off-state voltage: 1.2kV
Load current: 16A
Case: TO220FP
Mounting: THT
Max. load current: 25A
Max. forward impulse current: 0.3kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30mA
auf Bestellung 458 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.46 EUR
25+2.86 EUR
50+2.17 EUR
100+2 EUR
Mindestbestellmenge: 21
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CS30-12IO1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C4E460781E27&compId=CS30-12IO1-DTE.pdf?ci_sign=e71831bbd611d0d403ce659e4ecabb1a51f3954c
CS30-12IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO247AD
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 55mA
auf Bestellung 252 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.58 EUR
16+4.63 EUR
30+4.56 EUR
Mindestbestellmenge: 10
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CLA5E1200UC-TRL pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF06F8B3A4538BF&compId=CLA5E1200UC.pdf?ci_sign=7886f252147582f7a20d6fad18da76decb7917c7
CLA5E1200UC-TRL
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; DPAK; SMD; tube
Max. off-state voltage: 1.2kV
Load current: 5A
Case: DPAK
Mounting: SMD
Max. load current: 7.8A
Max. forward impulse current: 60A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
auf Bestellung 2224 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.55 EUR
31+2.33 EUR
32+2.29 EUR
100+2.13 EUR
250+2.03 EUR
500+1.82 EUR
Mindestbestellmenge: 29
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CLA30E1200PB pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEFEC36F01A38BF&compId=CLA30E1200PB.pdf?ci_sign=d383d2f8fbaa84679fa1f0485503906033c4eae7
CLA30E1200PB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO220AB
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.78 EUR
20+3.76 EUR
23+3.25 EUR
27+2.69 EUR
50+2.6 EUR
Mindestbestellmenge: 15
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CLF20E1200PB pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA9952EC35D40C0C7&compId=CLF20E1200PB.pdf?ci_sign=259617a1c258254612c9ab39e81daa6420058592
CLF20E1200PB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 55mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 20A
Case: TO220AB
Mounting: THT
Max. load current: 31A
Max. forward impulse current: 175A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 55mA
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.48 EUR
22+3.37 EUR
50+2.86 EUR
Mindestbestellmenge: 16
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CLA30E1200HB pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFAC10EF225820&compId=CLA30E1200HB.pdf?ci_sign=5ea43205d611045b998b73b0dfda412ae9b80fe1
CLA30E1200HB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 28mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO247AD
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 0.3kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 28mA
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
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CLB30I1200PZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5BF9A635F80C4&compId=CLB30I1200PZ.pdf?ci_sign=a1f9b4639a575365c028e15a3311ad9611b93dcf
CLB30I1200PZ-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO263ABHV
Mounting: SMD
Max. load current: 47A
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.75 EUR
22+3.36 EUR
25+2.96 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
CLA40E1200HR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB55076DADEE0C4&compId=CLA40E1200HR.pdf?ci_sign=81b17d8fccd5f58e2866df768188a420f4102207
CLA40E1200HR
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Max. off-state voltage: 1.2kV
Load current: 40A
Case: ISO247™
Mounting: THT
Max. load current: 63A
Max. forward impulse current: 555A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.34 EUR
7+11.43 EUR
10+9.51 EUR
30+8.69 EUR
Mindestbestellmenge: 6
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MEK250-12DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Type of semiconductor module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 1.2kV
Load current: 260A
Case: Y4-M6
Max. forward voltage: 1.54V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFN64N60P description pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF97E62CB569820&compId=IXFN64N60P.pdf?ci_sign=5337465655f291d661ef9e1d6e80c564eef352dc
IXFN64N60P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 96mΩ
Gate charge: 200nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXFX64N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB0ABA0A0DD8BF&compId=IXF_64N60P3.pdf?ci_sign=a8ce04ebb208e064f869f0d2ea995cec98534685
IXFX64N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK64N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BBFE33F23C1820&compId=IXFK(X)64N60P.pdf?ci_sign=72bec012642347b0204adb069da5fad2f328c04f
IXFK64N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFR64N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC5CF820&compId=IXFR64N60P.pdf?ci_sign=a5ddf5810bd4633ad4f2915f9b84a8516788d93e
IXFR64N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX64N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BBFE33F23C1820&compId=IXFK(X)64N60P.pdf?ci_sign=72bec012642347b0204adb069da5fad2f328c04f
IXFX64N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFN82N60P description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C7A165E0998BF&compId=IXFN82N60P.pdf?ci_sign=0609a250046cc3b3184e0f9e8a1cec155172d322
IXFN82N60P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 72A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 75mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Pulsed drain current: 200A
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXFQ22N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD15F39AD0B820&compId=IXFA(H%2CP%2CQ)22N60P3.pdf?ci_sign=977341036c5ff8f78f3d2b3abaff361a11b4088e
IXFQ22N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO3P
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTQ22N60P pVersion=0046&contRep=ZT&docId=005056AB82531EE987DF99DA4B2358BF&compId=IXTQ22N60P.pdf?ci_sign=a9e8633f155efa548c5fb2c6d491c1d7e8a3fc27
IXTQ22N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXFH42N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F79820&compId=IXFH42N60P3.pdf?ci_sign=2290d2eee92156c5a1711cfb89d3bcb1b88db4cc
IXFH42N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IX2127G pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85F670F3CC58BF&compId=IX2127.pdf?ci_sign=38a8b7c0bf9e260942cd93345172f63defde3c14
IX2127G
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Output current: -500...250mA
Mounting: THT
Number of channels: 1
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 9...12V
Kind of package: tube
Voltage class: 600V
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
Mindestbestellmenge: 90
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IX2127N pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85F670F3CC58BF&compId=IX2127.pdf?ci_sign=38a8b7c0bf9e260942cd93345172f63defde3c14
IX2127N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Output current: -500...250mA
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 9...12V
Kind of package: tube
Voltage class: 600V
auf Bestellung 825 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
Mindestbestellmenge: 82
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LBA716S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4F258929B38BF&compId=lba716.pdf?ci_sign=d45d468b46d147689665005b9ee4dfd3cf1d6094
LBA716S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.07 EUR
10+8.49 EUR
50+6.88 EUR
100+6.54 EUR
Mindestbestellmenge: 8
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IXFP7N100P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEC13C244BC98BF&compId=IXF_7N100P.pdf?ci_sign=098a71bb06e557089a0d1511de1a94a0bc177181
IXFP7N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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DSA120X200LB-TUB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C8E21202C2B8BF&compId=DSA120X200LB.pdf?ci_sign=cade504b715789123a9bc4b1a6fe7bb93fd83604
DSA120X200LB-TUB
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; tube; 185W
Semiconductor structure: double independent
Case: SMPD
Mounting: SMD
Type of diode: Schottky rectifying
Power dissipation: 185W
Max. forward voltage: 0.67V
Max. off-state voltage: 200V
Load current: 65A x2
Max. forward impulse current: 700A
Kind of package: tube
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXFN140N30P description pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF909B1E4561820&compId=IXFN140N30P.pdf?ci_sign=2b393dfec7ce74f333dc9621ba59a1ebed6ea252
IXFN140N30P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 24mΩ
Pulsed drain current: 300A
Power dissipation: 700W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 185nC
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.03 EUR
5+36.12 EUR
10+34.91 EUR
Mindestbestellmenge: 2
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DSSK50-015A pVersion=0046&contRep=ZT&docId=005056AB82531EE991CBA66F9B4258BF&compId=DSSK50-015A.pdf?ci_sign=ab1a501bd233c2ac65940608a5bcbedc2d1e1d8e
DSSK50-015A
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; TO247-3; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.68V
Max. forward impulse current: 0.45kA
Power dissipation: 135W
Kind of package: tube
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.88 EUR
14+5.21 EUR
16+4.76 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
DSSK50-01A pVersion=0046&contRep=ZT&docId=005056AB82531EE991CBA9C5A1EF58BF&compId=DSSK50-01A.pdf?ci_sign=e9423c14aa2226699a302afb9f9e202d790a5f31
DSSK50-01A
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.65V
Max. forward impulse current: 0.45kA
Power dissipation: 135W
Kind of package: tube
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.51 EUR
Mindestbestellmenge: 13
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DSSK50-0025B pVersion=0046&contRep=ZT&docId=005056AB82531EE991CBA2F7DE4FB8BF&compId=DSSK50-0025B.pdf?ci_sign=58875aab095e22171b444b48bf7e6c2161a9a26d
DSSK50-0025B
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25Ax2; TO247-3; Ufmax: 0.42V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.42V
Max. forward impulse current: 330A
Power dissipation: 90W
Kind of package: tube
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.76 EUR
Mindestbestellmenge: 19
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IXDN609YI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDN609YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 814 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.69 EUR
23+3.12 EUR
50+2.65 EUR
100+2.49 EUR
Mindestbestellmenge: 20
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IXDN602SI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDN602SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
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IXDN602SIATR littelfuse-integrated-circuits-ixd-602-datasheet?assetguid=75d5db43-b768-4a16-b76f-c3313dc04096
IXDN602SIATR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
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IXDN602SITR littelfuse-integrated-circuits-ixd-602-datasheet?assetguid=75d5db43-b768-4a16-b76f-c3313dc04096
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
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