Produkte > IXYS > Alle Produkte des Herstellers IXYS (18024) > Seite 300 nach 301

Wählen Sie Seite:   [  << Vorherige Seite ]  1 30 60 90 120 150 180 210 240 270 295 296 297 298 299 300 301  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DSEI8-06AS-TUB DSEI8-06AS-TUB IXYS DSEI8-06A_DSEI8-06AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; TO263AB; Ufmax: 1.3V; 50W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: tube
Technology: FRED
Power dissipation: 50W
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.46 EUR
32+2.23 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IXDD614SI IXDD614SI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 319 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.28 EUR
20+3.70 EUR
21+3.50 EUR
50+3.36 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXDD614PI IXDD614PI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 1052 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.20 EUR
33+2.17 EUR
35+2.04 EUR
500+1.97 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IXDD614YI IXDD614YI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 640 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.49 EUR
17+4.42 EUR
18+4.19 EUR
100+4.03 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXDD614SITR IXYS littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDN614PI IXDN614PI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.83 EUR
33+2.17 EUR
35+2.04 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IXDN614SITR IXYS littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH10P50P IXTH10P50P IXYS IXT_10P50P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 414ns
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.55 EUR
10+7.34 EUR
11+6.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXGT16N170A IXGT16N170A IXYS IXGH(t)16N170A_H1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 11A
Pulsed collector current: 40A
Turn-on time: 35ns
Turn-off time: 298ns
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 70nC
Technology: NPT
Mounting: SMD
Case: TO268
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGT16N170 IXGT16N170 IXYS IXGH16N170-DTE.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 16A
Pulsed collector current: 80A
Turn-on time: 90ns
Turn-off time: 1.6µs
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 78nC
Technology: NPT
Mounting: SMD
Case: TO268
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGT16N170AH1 IXGT16N170AH1 IXYS IXGH(t)16N170A_H1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 11A
Pulsed collector current: 40A
Turn-on time: 35ns
Turn-off time: 298ns
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 70nC
Technology: NPT
Mounting: SMD
Case: TO268
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DPG30C300PB DPG30C300PB IXYS Littelfuse-Power-Semiconductors-DPG30C300PB-Datasheet?assetguid=C29230B4-702B-4553-95E4-41ABDC8A3A6D Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 15A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO220AB
Max. forward voltage: 1.26V
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Technology: HiPerFRED™ 2nd Gen
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.75 EUR
21+3.42 EUR
27+2.70 EUR
28+2.56 EUR
50+2.55 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
DPG30C300HB DPG30C300HB IXYS Littelfuse-Power-Semiconductors-DPG30C300HB-Datasheet?assetguid=0400F707-7AFD-48EB-9257-C3597E59CCC5 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 15A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO247-3
Max. forward voltage: 1.25V
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Technology: HiPerFRED™ 2nd Gen
Kind of package: tube
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.52 EUR
26+2.85 EUR
27+2.69 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
DPG30C300PC-TRL IXYS DPG30C300PC.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 15A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.51V
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Technology: HiPerFRED™
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTY2N100P IXTY2N100P IXYS IXTA(P,Y)2N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTA2N100P IXTA2N100P IXYS IXTA(P,Y)2N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.32 EUR
25+2.92 EUR
28+2.63 EUR
29+2.49 EUR
50+2.46 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IXFR32N100P IXFR32N100P IXYS IXFR32N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
3+24.84 EUR
4+23.49 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFR32N100Q3 IXFR32N100Q3 IXYS IXFR32N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
2+44.46 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXTP2N100P IXTP2N100P IXYS IXTA(P,Y)2N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTX22N100L IXTX22N100L IXYS IXTK(X)22N100L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN52N100X IXFN52N100X IXYS IXFN52N100X.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Pulsed drain current: 100A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN32N100P IXFN32N100P IXYS IXFN32N100P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 27A
Pulsed drain current: 75A
Power dissipation: 690W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 225nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK32N100P IXFK32N100P IXYS IXFK(X)32N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTN22N100L IXTN22N100L IXYS IXTN22N100L.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Pulsed drain current: 50A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.6Ω
Gate charge: 0.27µC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK32N100Q3 IXFK32N100Q3 IXYS IXF_32N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK52N100X IXFK52N100X IXYS IXFK(X)52N100X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 245nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 260ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN32N100Q3 IXFN32N100Q3 IXYS IXFN32N100Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 28A
Pulsed drain current: 96A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 195nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFX32N100Q3 IXFX32N100Q3 IXYS IXF_32N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MEK75-12DA
+1
 		MEK75-12DA IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Type of module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 1.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
3+32.86 EUR
36+32.33 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
CPC1909J CPC1909J IXYS CPC1909.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 6500mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 6.5A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.1Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 25ms
Turn-off time: 10ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH8N250CHV IXYH8N250CHV IXYS IXY_8N250CHV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO247HV
Kind of package: tube
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 70A
Turn-on time: 24ns
Turn-off time: 328ns
Type of transistor: IGBT
Power dissipation: 280W
Features of semiconductor devices: high voltage
Gate charge: 45nC
Technology: XPT™
Mounting: THT
Case: TO247HV
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
3+25.04 EUR
4+23.68 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXTH2N150L IXTH2N150L IXYS IXTH2N150L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2A; 290W; TO247-3; 1.86us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 15Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.86µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTK90N25L2 IXTK90N25L2 IXYS IXTK(X)90N25L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; TO264; 266ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Power dissipation: 960W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 266ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC162-16io1 IXYS MCC162-16IO1.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 6.48kA
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
1+85.07 EUR
6+81.80 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MCC162-16IO1B IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC162-18io1 IXYS MCC162-18IO1-dte.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 6.48kA
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
1+87.37 EUR
6+84.58 EUR
12+84.01 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MCC162-18IO1B IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT180N20X3HV IXFT180N20X3HV IXYS IXF_180N20X3_HV.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 180A
Power dissipation: 780W
Case: TO268
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 94ns
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
4+20.65 EUR
5+15.64 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFT150N30X3HV IXFT150N30X3HV IXYS IXF_150N30X3_HV.pdf 300VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 167ns
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
4+21.64 EUR
30+21.34 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFT150N20T IXFT150N20T IXYS IXFH(T)150N20T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT16N120P IXFT16N120P IXYS IXFH(T)16N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Power dissipation: 660W
Case: TO268
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT340N075T2 IXFT340N075T2 IXYS IXFH(T)340N075T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO268
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 75ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT60N50P3 IXFT60N50P3 IXYS IXF_60N50P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT69N30P IXFT69N30P IXYS IXFH(T)69N30P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 69A; 500W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 69A
Power dissipation: 500W
Case: TO268
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT70N20Q3 IXFT70N20Q3 IXYS IXFH(T)70N20Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 70A
Power dissipation: 690W
Case: TO268
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT70N30Q3 IXFT70N30Q3 IXYS IXFH(T)70N30Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Power dissipation: 830W
Case: TO268
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT96N20P IXFT96N20P IXYS IXFH(T,V)96N20P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Power dissipation: 600W
Case: TO268
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT100N30X3HV IXFT100N30X3HV IXYS IXF_100N30X3_HV.pdf 300VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 480W
Case: TO268
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT150N17T2 IXFT150N17T2 IXYS IXFT150N17T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 175V; 150A; 880W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 175V
Drain current: 150A
Power dissipation: 880W
Case: TO268
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 233nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT150N25X3HV IXYS IXFH150N25X3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Power dissipation: 735W
Case: TO268HV
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 300A
Reverse recovery time: 140ns
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT18N100Q3 IXFT18N100Q3 IXYS IXFH(T)18N100Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.66Ω
Mounting: SMD
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT20N80P IXFT20N80P IXYS IXFH(T,V)20N80P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Power dissipation: 500W
Case: TO268
On-state resistance: 0.52Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT220N20X3HV IXFT220N20X3HV IXYS IXF_220N20X3_HV.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Case: TO268
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT26N60P IXFT26N60P IXYS IXFH26N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT30N85XHV IXFT30N85XHV IXYS IXFH30N85X_IXFT30N85XHV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO268HV; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 30A
Power dissipation: 695W
Case: TO268HV
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT36N50P IXFT36N50P IXYS IXFH(V,T)36N50P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT36N60P IXFT36N60P IXYS IXFH(K,T)36N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT40N85XHV IXFT40N85XHV IXYS IXFT40N85X.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 40A; 860W; TO268HV; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 40A
Power dissipation: 860W
Case: TO268HV
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCMA110P1600TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC3703CTR CPC3703CTR IXYS CPC3703.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
auf Bestellung 2002 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.33 EUR
68+1.05 EUR
134+0.54 EUR
142+0.51 EUR
500+0.50 EUR
1000+0.49 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
DSEI8-06AS-TUB DSEI8-06A_DSEI8-06AS.pdf
DSEI8-06AS-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; TO263AB; Ufmax: 1.3V; 50W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: tube
Technology: FRED
Power dissipation: 50W
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.46 EUR
32+2.23 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IXDD614SI IXDD614CI-DTE.pdf
IXDD614SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 319 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.28 EUR
20+3.70 EUR
21+3.50 EUR
50+3.36 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXDD614PI IXDD614CI-DTE.pdf
IXDD614PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 1052 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.20 EUR
33+2.17 EUR
35+2.04 EUR
500+1.97 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IXDD614YI IXDD614CI-DTE.pdf
IXDD614YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 640 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.49 EUR
17+4.42 EUR
18+4.19 EUR
100+4.03 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXDD614SITR littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDN614PI IXDD614CI-DTE.pdf
IXDN614PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.83 EUR
33+2.17 EUR
35+2.04 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IXDN614SITR littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH10P50P IXT_10P50P.pdf
IXTH10P50P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 414ns
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.55 EUR
10+7.34 EUR
11+6.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXGT16N170A IXGH(t)16N170A_H1.pdf
IXGT16N170A
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 11A
Pulsed collector current: 40A
Turn-on time: 35ns
Turn-off time: 298ns
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 70nC
Technology: NPT
Mounting: SMD
Case: TO268
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGT16N170 IXGH16N170-DTE.pdf
IXGT16N170
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 16A
Pulsed collector current: 80A
Turn-on time: 90ns
Turn-off time: 1.6µs
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 78nC
Technology: NPT
Mounting: SMD
Case: TO268
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGT16N170AH1 IXGH(t)16N170A_H1.pdf
IXGT16N170AH1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 11A
Pulsed collector current: 40A
Turn-on time: 35ns
Turn-off time: 298ns
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 70nC
Technology: NPT
Mounting: SMD
Case: TO268
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DPG30C300PB Littelfuse-Power-Semiconductors-DPG30C300PB-Datasheet?assetguid=C29230B4-702B-4553-95E4-41ABDC8A3A6D
DPG30C300PB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 15A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO220AB
Max. forward voltage: 1.26V
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Technology: HiPerFRED™ 2nd Gen
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.75 EUR
21+3.42 EUR
27+2.70 EUR
28+2.56 EUR
50+2.55 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
DPG30C300HB Littelfuse-Power-Semiconductors-DPG30C300HB-Datasheet?assetguid=0400F707-7AFD-48EB-9257-C3597E59CCC5
DPG30C300HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 15A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO247-3
Max. forward voltage: 1.25V
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Technology: HiPerFRED™ 2nd Gen
Kind of package: tube
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.52 EUR
26+2.85 EUR
27+2.69 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
DPG30C300PC-TRL DPG30C300PC.pdf
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 15A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.51V
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Technology: HiPerFRED™
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTY2N100P IXTA(P,Y)2N100P.pdf
IXTY2N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTA2N100P IXTA(P,Y)2N100P.pdf
IXTA2N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.32 EUR
25+2.92 EUR
28+2.63 EUR
29+2.49 EUR
50+2.46 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IXFR32N100P IXFR32N100P.pdf
IXFR32N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.84 EUR
4+23.49 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFR32N100Q3 IXFR32N100Q3.pdf
IXFR32N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+44.46 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXTP2N100P IXTA(P,Y)2N100P.pdf
IXTP2N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTX22N100L IXTK(X)22N100L.pdf
IXTX22N100L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN52N100X IXFN52N100X.pdf
IXFN52N100X
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Pulsed drain current: 100A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN32N100P IXFN32N100P.pdf
IXFN32N100P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 27A
Pulsed drain current: 75A
Power dissipation: 690W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 225nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK32N100P IXFK(X)32N100P.pdf
IXFK32N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTN22N100L IXTN22N100L.pdf
IXTN22N100L
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Pulsed drain current: 50A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.6Ω
Gate charge: 0.27µC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK32N100Q3 IXF_32N100Q3.pdf
IXFK32N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK52N100X IXFK(X)52N100X.pdf
IXFK52N100X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 245nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 260ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN32N100Q3 IXFN32N100Q3.pdf
IXFN32N100Q3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 28A
Pulsed drain current: 96A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 195nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFX32N100Q3 IXF_32N100Q3.pdf
IXFX32N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MEK75-12DA PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MEK75-12DA
+1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Type of module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 1.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.86 EUR
36+32.33 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
CPC1909J CPC1909.pdf
CPC1909J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 6500mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 6.5A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.1Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 25ms
Turn-off time: 10ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH8N250CHV IXY_8N250CHV.pdf
IXYH8N250CHV
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO247HV
Kind of package: tube
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 70A
Turn-on time: 24ns
Turn-off time: 328ns
Type of transistor: IGBT
Power dissipation: 280W
Features of semiconductor devices: high voltage
Gate charge: 45nC
Technology: XPT™
Mounting: THT
Case: TO247HV
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+25.04 EUR
4+23.68 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXTH2N150L IXTH2N150L.pdf
IXTH2N150L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2A; 290W; TO247-3; 1.86us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 15Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.86µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTK90N25L2 IXTK(X)90N25L2.pdf
IXTK90N25L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; TO264; 266ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Power dissipation: 960W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 266ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC162-16io1 MCC162-16IO1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 6.48kA
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+85.07 EUR
6+81.80 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MCC162-16IO1B PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC162-18io1 MCC162-18IO1-dte.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 6.48kA
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+87.37 EUR
6+84.58 EUR
12+84.01 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MCC162-18IO1B PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT180N20X3HV IXF_180N20X3_HV.pdf 200VProductBrief.pdf
IXFT180N20X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 180A
Power dissipation: 780W
Case: TO268
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 94ns
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.65 EUR
5+15.64 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFT150N30X3HV IXF_150N30X3_HV.pdf 300VProductBrief.pdf
IXFT150N30X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 167ns
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.64 EUR
30+21.34 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFT150N20T IXFH(T)150N20T.pdf
IXFT150N20T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT16N120P IXFH(T)16N120P.pdf
IXFT16N120P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Power dissipation: 660W
Case: TO268
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT340N075T2 IXFH(T)340N075T2.pdf
IXFT340N075T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO268
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 75ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT60N50P3 IXF_60N50P3.pdf
IXFT60N50P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT69N30P IXFH(T)69N30P.pdf
IXFT69N30P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 69A; 500W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 69A
Power dissipation: 500W
Case: TO268
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT70N20Q3 IXFH(T)70N20Q3.pdf
IXFT70N20Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 70A
Power dissipation: 690W
Case: TO268
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT70N30Q3 IXFH(T)70N30Q3.pdf
IXFT70N30Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Power dissipation: 830W
Case: TO268
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT96N20P IXFH(T,V)96N20P.pdf
IXFT96N20P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Power dissipation: 600W
Case: TO268
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT100N30X3HV IXF_100N30X3_HV.pdf 300VProductBrief.pdf
IXFT100N30X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 480W
Case: TO268
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT150N17T2 IXFT150N17T2.pdf
IXFT150N17T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 175V; 150A; 880W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 175V
Drain current: 150A
Power dissipation: 880W
Case: TO268
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 233nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT150N25X3HV IXFH150N25X3.pdf
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Power dissipation: 735W
Case: TO268HV
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 300A
Reverse recovery time: 140ns
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT18N100Q3 IXFH(T)18N100Q3.pdf
IXFT18N100Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.66Ω
Mounting: SMD
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT20N80P IXFH(T,V)20N80P_S.pdf
IXFT20N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Power dissipation: 500W
Case: TO268
On-state resistance: 0.52Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT220N20X3HV IXF_220N20X3_HV.pdf 200VProductBrief.pdf
IXFT220N20X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Case: TO268
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT26N60P IXFH26N60P.pdf
IXFT26N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT30N85XHV IXFH30N85X_IXFT30N85XHV.pdf
IXFT30N85XHV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO268HV; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 30A
Power dissipation: 695W
Case: TO268HV
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT36N50P IXFH(V,T)36N50P_S.pdf
IXFT36N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT36N60P IXFH(K,T)36N60P.pdf
IXFT36N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT40N85XHV IXFT40N85X.PDF
IXFT40N85XHV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 40A; 860W; TO268HV; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 40A
Power dissipation: 860W
Case: TO268HV
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCMA110P1600TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC3703CTR CPC3703.pdf
CPC3703CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
auf Bestellung 2002 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
68+1.05 EUR
134+0.54 EUR
142+0.51 EUR
500+0.50 EUR
1000+0.49 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 30 60 90 120 150 180 210 240 270 295 296 297 298 299 300 301  [ Nächste Seite >> ]