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IXYH75N65C3 IXYH75N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9CC3DBEE55820&compId=IXYH75N65C3.pdf?ci_sign=83a14405d58a0734a9b50875b6ba75d0d3f838e7 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-off time: 179ns
Turn-on time: 90ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Collector-emitter voltage: 650V
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MWI50-12A7 IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mechanical mounting: screw
Technology: NPT
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MWI50-12T7T IXYS MWI50-12T7T.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 270W
Mechanical mounting: screw
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VBO22-08NO8 VBO22-08NO8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B12C9F6B6540C7&compId=VBO22-08NO8.pdf?ci_sign=1fbe7e5633960b7d58e4762058e773b0db93c70e Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 14A
Max. forward impulse current: 380A
Version: square
Case: FO-B
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
auf Bestellung 39 Stücke:
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7+10.38 EUR
8+9.81 EUR
10+9.44 EUR
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VBO22-16NO8 VBO22-16NO8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B1384D1645E0C7&compId=VBO22-16NO8.pdf?ci_sign=23b029c4e1880883b4d18582f432dd6cd01b04bd Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 14A
Max. forward impulse current: 380A
Version: square
Case: FO-B
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
auf Bestellung 50 Stücke:
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5+17.37 EUR
6+12.37 EUR
20+11.9 EUR
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VBO22-18NO8 VBO22-18NO8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B13AF821B920C7&compId=VBO22-18NO8.pdf?ci_sign=bdf45c6fe933652338ef5355d9bb4feda13b90ac Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.8kV
Load current: 14A
Max. forward impulse current: 380A
Version: square
Case: FO-B
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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VBO22-12NO8 VBO22-12NO8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B13486DBFD40C7&compId=VBO22-12NO8.pdf?ci_sign=b86a16e2a44a0ba14050a3e6239299f2ef4f31c5 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 14A
Max. forward impulse current: 380A
Version: square
Case: FO-B
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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IX2120B IX2120B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85EE30198B98BF&compId=IX2120.pdf?ci_sign=47bd2d4a0f5d64523f2a893f5797acc77844756c Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Mounting: SMD
Kind of package: tube
Operating temperature: -40...150°C
Supply voltage: 15...20V
Number of channels: 2
Voltage class: 1.2kV
Topology: IGBT half-bridge; MOSFET half-bridge
auf Bestellung 232 Stücke:
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35+2.1 EUR
36+2.03 EUR
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CS30-12IO1 CS30-12IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C4E460781E27&compId=CS30-12IO1-DTE.pdf?ci_sign=e71831bbd611d0d403ce659e4ecabb1a51f3954c Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.4kA
auf Bestellung 262 Stücke:
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9+8.01 EUR
15+5 EUR
16+4.73 EUR
30+4.7 EUR
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IXFH140N20X3 IXFH140N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
auf Bestellung 75 Stücke:
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5+15.43 EUR
6+12.3 EUR
7+11.61 EUR
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IXFN140N20P IXFN140N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C66907012B8BF&compId=IXFN140N20P.pdf?ci_sign=a0e4bc6acd78ecb9536f9dcaae8667685d73f53e description Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Technology: HiPerFET™; Polar™
Electrical mounting: screw
Mechanical mounting: screw
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IXFK140N20P IXFK140N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94595727F820&compId=IXFK140N20P.pdf?ci_sign=d20ac8ee9e68221e8632f05c33f67c84eb8fecee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXFR140N20P IXFR140N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6AB1820&compId=IXFR140N20P.pdf?ci_sign=b301331a199d3b8298da379b97dfd03e718d0239 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXTK140N20P IXTK140N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF91769AF6A03E27&compId=IXTK140N20P-DTE.pdf?ci_sign=08600a905672f16d4200168350a2bb2948e0f97d Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: PolarHT™
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IXTP26P10T IXTP26P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
auf Bestellung 8 Stücke:
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8+8.94 EUR
Mindestbestellmenge: 8
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IXTY26P10T IXTY26P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
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IXTA26P10T IXTA26P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
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LDA210S LDA210S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC5A7355F41EC&compId=LDA210S.pdf?ci_sign=5a79258bba6a8a2cd9ee16e60c4dcb8de005b71a Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; 3.75kV; SOP8
Turn-on time: 8µs
Turn-off time: 345µs
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 2
Case: SOP8
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Kind of output: Darlington
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LCA210STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494619781A0C7&compId=LCA210L.pdf?ci_sign=7ead4652b960bef30b34aa932e997dfc6a07aed4 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Operating temperature: -40...85°C
Contacts configuration: SPDT
Type of relay: solid state
Relay variant: 1-phase; current source
Turn-on time: 3ms
Turn-off time: 3ms
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Manufacturer series: OptoMOS
Max. operating current: 85mA
Control current max.: 100mA
Case: DIP8
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Produkt ist nicht verfügbar
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LDA210STR LDA210STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC5A7355F41EC&compId=LDA210S.pdf?ci_sign=5a79258bba6a8a2cd9ee16e60c4dcb8de005b71a Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Turn-on time: 7µs
Turn-off time: 20µs
Mounting: SMD
Trigger current: 1A
Type of optocoupler: optocoupler
Number of channels: 2
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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IXFT26N60P IXFT26N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED783F9DF33DFBB2259&compId=IXFH26N60P.pdf?ci_sign=9bba2217361a08c9c0640ecbde1a01f412fcd492 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
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IXTQ26N60P IXTQ26N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D522F688F8B820&compId=IXTH(Q%2CT%2CV)26N60P_S.pdf?ci_sign=00e2f7b4fe95c5c6f2d8b57fcefc771d8841088e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTT26N60P IXTT26N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D522F688F8B820&compId=IXTH(Q%2CT%2CV)26N60P_S.pdf?ci_sign=00e2f7b4fe95c5c6f2d8b57fcefc771d8841088e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
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IXDD614YI IXDD614YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -14...14A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 540 Stücke:
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10+7.15 EUR
17+4.45 EUR
18+4.2 EUR
50+4.05 EUR
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IXDN630YI IXDN630YI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Output current: -30...30A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 12.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Turn-off time: 135ns
Turn-on time: 135ns
auf Bestellung 114 Stücke:
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7+10.28 EUR
9+8.14 EUR
25+7.84 EUR
50+7.82 EUR
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IXDD609YI IXDD609YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -9...9A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 862 Stücke:
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20+3.63 EUR
25+2.87 EUR
27+2.7 EUR
100+2.63 EUR
250+2.6 EUR
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IXDI609YI IXDI609YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -9...9A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 162 Stücke:
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18+4.02 EUR
24+3.03 EUR
25+2.92 EUR
26+2.83 EUR
50+2.8 EUR
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IXDN609YI IXDN609YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -9...9A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 814 Stücke:
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28+2.59 EUR
100+2.49 EUR
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IXDI630MYI IXDI630MYI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Output current: -30...30A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 12.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: inverting
Turn-off time: 135ns
Turn-on time: 135ns
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IXDI630YI IXDI630YI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Output current: -30...30A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 12.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: inverting
Turn-off time: 135ns
Turn-on time: 135ns
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DAA200XA1800NA DAA200XA1800NA IXYS Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Features of semiconductor devices: avalanche breakdown effect
Semiconductor structure: double independent
Type of semiconductor module: diode
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.21V
Load current: 100A x2
Max. off-state voltage: 1.8kV
Max. forward impulse current: 1.5kA
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IXGK100N170 IXGK100N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0A6DAFB799820&compId=IXGK(X)100N170.pdf?ci_sign=c8053da6d72a2c79586ce8a850d84b1d66a7da31 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Case: TO264
Kind of package: tube
Turn-on time: 285ns
Gate charge: 425nC
Turn-off time: 720ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 600A
Power dissipation: 830W
Collector-emitter voltage: 1.7kV
Produkt ist nicht verfügbar
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IXFA22N65X2 IXFA22N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7E33E399F98BF&compId=IXF_22N65X2.pdf?ci_sign=0c8f69f0a301813161ad4a66663b73b0511fd05a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Technology: HiPerFET™; X2-Class
Produkt ist nicht verfügbar
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DSDI60-18A DSDI60-18A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD54AADEAF918BF&compId=DSDI60.pdf?ci_sign=66c00a987b53d82961db2b8d5679ca1617d22433 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 60A; tube; Ifsm: 450A; TO247-2; 416W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Max. forward voltage: 2.6V
Power dissipation: 416W
Reverse recovery time: 40ns
auf Bestellung 66 Stücke:
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DSB30C45HB DSB30C45HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9F3762C81D8BF&compId=DSB30C45HB.pdf?ci_sign=b161982be0075e64c6fdfe6b02bf980f9890383b Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO247-3; Ufmax: 0.54V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.54V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
auf Bestellung 274 Stücke:
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59+1.23 EUR
60+1.2 EUR
63+1.14 EUR
66+1.09 EUR
120+1.06 EUR
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DSB30C60PB DSB30C60PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9FC978F87D8BF&compId=DSB30C60PB.pdf?ci_sign=0d5a96217a129ccb8634621d64f68ba9d68ef08a Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.64V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 79 Stücke:
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44+1.63 EUR
49+1.47 EUR
55+1.3 EUR
56+1.29 EUR
59+1.22 EUR
61+1.17 EUR
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DSB30C30PB DSB30C30PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9EF80D63918BF&compId=DSB30C30PB.pdf?ci_sign=e3b2e1d3b30d6cb3859e7bd8d5bcae0f32f2b233 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 15Ax2; TO220AB; Ufmax: 0.44V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.44V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
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DSB30C45PB DSB30C45PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9F8AD3DC0F8BF&compId=DSB30C45PB.pdf?ci_sign=bb791a637b6c85b6762bc6468860844fe4a645a6 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.55V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Produkt ist nicht verfügbar
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IXKN45N80C IXKN45N80C IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EFA0178ACB99820&compId=IXKN45N80C.pdf?ci_sign=3a67251ab3748ae8b17238230362fb2fdf304e04 Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; SOT227B; screw; 380W; 360nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 380W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Kind of channel: enhancement
Gate charge: 360nC
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 800ns
Produkt ist nicht verfügbar
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IXKR25N80C IXKR25N80C IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A9C35AC94E78BF&compId=IXKR25N80C.pdf?ci_sign=d4d0a062d2af329a2a082f1126544ec91bfbf883 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Power dissipation: 250W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
Produkt ist nicht verfügbar
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IXKC25N80C IXYS littelfuse_discrete_mosfets_n-channel_super_junction_ixkc25n80c_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
Reverse recovery time: 550ns
Produkt ist nicht verfügbar
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IXTH270N04T4 IXTH270N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Reverse recovery time: 48ns
auf Bestellung 1 Stücke:
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IXTP270N04T4 IXTP270N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Reverse recovery time: 48ns
auf Bestellung 59 Stücke:
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17+4.33 EUR
19+3.9 EUR
22+3.26 EUR
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IXTA170N075T2 IXTA170N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BAC1FD1859D820&compId=IXTA(P)170N075T2.pdf?ci_sign=e01017447e298f17bee545516edbc47dab257dbe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO263; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO263
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Reverse recovery time: 63ns
auf Bestellung 43 Stücke:
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IXTP170N075T2 IXTP170N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BAC1FD1859D820&compId=IXTA(P)170N075T2.pdf?ci_sign=e01017447e298f17bee545516edbc47dab257dbe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO220AB; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Reverse recovery time: 63ns
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IXTP70N075T2 IXTP70N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4403F7996D820&compId=IXTA(P)70N075T2.pdf?ci_sign=0656d3eaf9da3cd72c5ad6e6291c34f2e42cafa2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 46nC
Reverse recovery time: 48ns
Produkt ist nicht verfügbar
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IXTA70N075T2 IXTA70N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4403F7996D820&compId=IXTA(P)70N075T2.pdf?ci_sign=0656d3eaf9da3cd72c5ad6e6291c34f2e42cafa2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 150W
Case: TO263
On-state resistance: 12mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 46nC
Reverse recovery time: 48ns
Produkt ist nicht verfügbar
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IXTA270N04T4 IXTA270N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAACCCA46F820&compId=IXTA270N04T4.pdf?ci_sign=5943278f7f5382b890ecedd75c0f652bcb39ba12 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO263
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Reverse recovery time: 48ns
Produkt ist nicht verfügbar
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IXTA270N04T4-7 IXTA270N04T4-7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAACCCA46F820&compId=IXTA270N04T4.pdf?ci_sign=5943278f7f5382b890ecedd75c0f652bcb39ba12 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263-7; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO263-7
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Reverse recovery time: 48ns
Produkt ist nicht verfügbar
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CLA80E1200HF CLA80E1200HF IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A0F0061E2F7B6143&compId=CLA80E1200HF.pdf?ci_sign=92b34dd44e4b0b4d546dbee16db25f9f13c9c6cf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 38mA
Case: PLUS247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 765A
auf Bestellung 245 Stücke:
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7+10.84 EUR
9+8.12 EUR
10+7.81 EUR
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VBO21-12NO7 VBO21-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FEA8DA268BC0C4&compId=VBO21-12NO7.pdf?ci_sign=516f358b6bb5485f53c65238575a620f94c8c208 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 20A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 120A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
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5+15.33 EUR
6+12.73 EUR
10+12.24 EUR
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VBO21-08NO7 VBO21-08NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FEA4174B65C0C4&compId=VBO21-08NO7.pdf?ci_sign=7df11d659109a08237d18622c305a9c1418da0ec Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 20A
Max. forward impulse current: 120A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Produkt ist nicht verfügbar
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IXDN604SITR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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IXFK200N10P IXFK200N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD8B1AA6C45820&compId=IXFK(X)200N10P.pdf?ci_sign=9da439a6d66c4e98324b0d3df947cbc3c4d4b05f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 235nC
On-state resistance: 7.5mΩ
Drain current: 200A
Drain-source voltage: 100V
Power dissipation: 830W
Produkt ist nicht verfügbar
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IXTY02N50D IXYS littelfuse-discrete-mosfets-ixt-02n50d-datasheet?assetguid=034fffd1-528e-4165-a830-650adaa583e5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 200mA; Idm: 800mA; 25W; TO252
Polarisation: unipolar
Reverse recovery time: 1µs
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 25W
On-state resistance: 30Ω
Gate-source voltage: ±20V
Drain-source voltage: 500V
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Case: TO252
Produkt ist nicht verfügbar
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IXFH90N20X3 IXFH90N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB8178012838BF&compId=IXF_90N20X3.pdf?ci_sign=cd4eb69bd34dd603e68d972f3c7cec2471da9466 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Technology: HiPerFET™; X3-Class
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.51 EUR
Mindestbestellmenge: 10
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IXTP48N20T IXTP48N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D511305565B820&compId=IXTA(P%2CQ)48N20T.pdf?ci_sign=96c4cd9fa46a40159c3190f1520d7e4bacc391d6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 60nC
Reverse recovery time: 130ns
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.88 EUR
16+4.53 EUR
24+3.07 EUR
25+2.92 EUR
100+2.82 EUR
Mindestbestellmenge: 15
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IXGT16N170A IXGT16N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38 Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO268
Technology: NPT
Mounting: SMD
Gate charge: 70nC
Turn-on time: 35ns
Turn-off time: 298ns
Collector current: 11A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 190W
Collector-emitter voltage: 1.7kV
Produkt ist nicht verfügbar
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IXGT16N170 IXGT16N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAB99F1D44C151BF&compId=IXGH16N170-DTE.pdf?ci_sign=03a18b66e5d35198e9e236f78cf7b52f7cc4d616 Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO268
Technology: NPT
Mounting: SMD
Gate charge: 78nC
Turn-on time: 90ns
Turn-off time: 1.6µs
Collector current: 16A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 190W
Collector-emitter voltage: 1.7kV
Produkt ist nicht verfügbar
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IXGT16N170AH1 IXGT16N170AH1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38 Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO268
Technology: NPT
Mounting: SMD
Gate charge: 70nC
Turn-on time: 35ns
Turn-off time: 298ns
Collector current: 11A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 190W
Collector-emitter voltage: 1.7kV
Produkt ist nicht verfügbar
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IXYH75N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9CC3DBEE55820&compId=IXYH75N65C3.pdf?ci_sign=83a14405d58a0734a9b50875b6ba75d0d3f838e7
IXYH75N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-off time: 179ns
Turn-on time: 90ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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MWI50-12A7
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
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MWI50-12T7T MWI50-12T7T.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 270W
Mechanical mounting: screw
Produkt ist nicht verfügbar
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VBO22-08NO8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B12C9F6B6540C7&compId=VBO22-08NO8.pdf?ci_sign=1fbe7e5633960b7d58e4762058e773b0db93c70e
VBO22-08NO8
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 14A
Max. forward impulse current: 380A
Version: square
Case: FO-B
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.38 EUR
8+9.81 EUR
10+9.44 EUR
Mindestbestellmenge: 7
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VBO22-16NO8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B1384D1645E0C7&compId=VBO22-16NO8.pdf?ci_sign=23b029c4e1880883b4d18582f432dd6cd01b04bd
VBO22-16NO8
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 14A
Max. forward impulse current: 380A
Version: square
Case: FO-B
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+17.37 EUR
6+12.37 EUR
20+11.9 EUR
Mindestbestellmenge: 5
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VBO22-18NO8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B13AF821B920C7&compId=VBO22-18NO8.pdf?ci_sign=bdf45c6fe933652338ef5355d9bb4feda13b90ac
VBO22-18NO8
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.8kV
Load current: 14A
Max. forward impulse current: 380A
Version: square
Case: FO-B
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Produkt ist nicht verfügbar
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VBO22-12NO8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B13486DBFD40C7&compId=VBO22-12NO8.pdf?ci_sign=b86a16e2a44a0ba14050a3e6239299f2ef4f31c5
VBO22-12NO8
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 14A
Max. forward impulse current: 380A
Version: square
Case: FO-B
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Produkt ist nicht verfügbar
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IX2120B pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85EE30198B98BF&compId=IX2120.pdf?ci_sign=47bd2d4a0f5d64523f2a893f5797acc77844756c
IX2120B
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Mounting: SMD
Kind of package: tube
Operating temperature: -40...150°C
Supply voltage: 15...20V
Number of channels: 2
Voltage class: 1.2kV
Topology: IGBT half-bridge; MOSFET half-bridge
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.1 EUR
36+2.03 EUR
Mindestbestellmenge: 35
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CS30-12IO1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C4E460781E27&compId=CS30-12IO1-DTE.pdf?ci_sign=e71831bbd611d0d403ce659e4ecabb1a51f3954c
CS30-12IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.4kA
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.01 EUR
15+5 EUR
16+4.73 EUR
30+4.7 EUR
Mindestbestellmenge: 9
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IXFH140N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFH140N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.43 EUR
6+12.3 EUR
7+11.61 EUR
Mindestbestellmenge: 5
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IXFN140N20P description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C66907012B8BF&compId=IXFN140N20P.pdf?ci_sign=a0e4bc6acd78ecb9536f9dcaae8667685d73f53e
IXFN140N20P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Technology: HiPerFET™; Polar™
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFK140N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94595727F820&compId=IXFK140N20P.pdf?ci_sign=d20ac8ee9e68221e8632f05c33f67c84eb8fecee
IXFK140N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFR140N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6AB1820&compId=IXFR140N20P.pdf?ci_sign=b301331a199d3b8298da379b97dfd03e718d0239
IXFR140N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTK140N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF91769AF6A03E27&compId=IXTK140N20P-DTE.pdf?ci_sign=08600a905672f16d4200168350a2bb2948e0f97d
IXTK140N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: PolarHT™
Produkt ist nicht verfügbar
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IXTP26P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124
IXTP26P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
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IXTY26P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124
IXTY26P10T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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IXTA26P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124
IXTA26P10T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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LDA210S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC5A7355F41EC&compId=LDA210S.pdf?ci_sign=5a79258bba6a8a2cd9ee16e60c4dcb8de005b71a
LDA210S
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; 3.75kV; SOP8
Turn-on time: 8µs
Turn-off time: 345µs
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 2
Case: SOP8
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Kind of output: Darlington
Produkt ist nicht verfügbar
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LCA210STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494619781A0C7&compId=LCA210L.pdf?ci_sign=7ead4652b960bef30b34aa932e997dfc6a07aed4
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Operating temperature: -40...85°C
Contacts configuration: SPDT
Type of relay: solid state
Relay variant: 1-phase; current source
Turn-on time: 3ms
Turn-off time: 3ms
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Manufacturer series: OptoMOS
Max. operating current: 85mA
Control current max.: 100mA
Case: DIP8
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Produkt ist nicht verfügbar
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LDA210STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC5A7355F41EC&compId=LDA210S.pdf?ci_sign=5a79258bba6a8a2cd9ee16e60c4dcb8de005b71a
LDA210STR
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Turn-on time: 7µs
Turn-off time: 20µs
Mounting: SMD
Trigger current: 1A
Type of optocoupler: optocoupler
Number of channels: 2
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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IXFT26N60P pVersion=0046&contRep=ZT&docId=005056AB752F1ED783F9DF33DFBB2259&compId=IXFH26N60P.pdf?ci_sign=9bba2217361a08c9c0640ecbde1a01f412fcd492
IXFT26N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTQ26N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D522F688F8B820&compId=IXTH(Q%2CT%2CV)26N60P_S.pdf?ci_sign=00e2f7b4fe95c5c6f2d8b57fcefc771d8841088e
IXTQ26N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTT26N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D522F688F8B820&compId=IXTH(Q%2CT%2CV)26N60P_S.pdf?ci_sign=00e2f7b4fe95c5c6f2d8b57fcefc771d8841088e
IXTT26N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXDD614YI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDD614YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -14...14A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
17+4.45 EUR
18+4.2 EUR
50+4.05 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXDN630YI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDN630YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Output current: -30...30A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 12.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Turn-off time: 135ns
Turn-on time: 135ns
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.28 EUR
9+8.14 EUR
25+7.84 EUR
50+7.82 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXDD609YI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDD609YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -9...9A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 862 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.63 EUR
25+2.87 EUR
27+2.7 EUR
100+2.63 EUR
250+2.6 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXDI609YI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDI609YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -9...9A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.02 EUR
24+3.03 EUR
25+2.92 EUR
26+2.83 EUR
50+2.8 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IXDN609YI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDN609YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -9...9A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 814 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.69 EUR
27+2.75 EUR
28+2.59 EUR
100+2.49 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXDI630MYI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDI630MYI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Output current: -30...30A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 12.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: inverting
Turn-off time: 135ns
Turn-on time: 135ns
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.08 EUR
9+8.02 EUR
10+7.58 EUR
50+7.29 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXDI630YI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDI630YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Output current: -30...30A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 12.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: inverting
Turn-off time: 135ns
Turn-on time: 135ns
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.9 EUR
9+8.14 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DAA200XA1800NA
DAA200XA1800NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Features of semiconductor devices: avalanche breakdown effect
Semiconductor structure: double independent
Type of semiconductor module: diode
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.21V
Load current: 100A x2
Max. off-state voltage: 1.8kV
Max. forward impulse current: 1.5kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGK100N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0A6DAFB799820&compId=IXGK(X)100N170.pdf?ci_sign=c8053da6d72a2c79586ce8a850d84b1d66a7da31
IXGK100N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Case: TO264
Kind of package: tube
Turn-on time: 285ns
Gate charge: 425nC
Turn-off time: 720ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 600A
Power dissipation: 830W
Collector-emitter voltage: 1.7kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA22N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7E33E399F98BF&compId=IXF_22N65X2.pdf?ci_sign=0c8f69f0a301813161ad4a66663b73b0511fd05a
IXFA22N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Technology: HiPerFET™; X2-Class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSDI60-18A pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD54AADEAF918BF&compId=DSDI60.pdf?ci_sign=66c00a987b53d82961db2b8d5679ca1617d22433
DSDI60-18A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 60A; tube; Ifsm: 450A; TO247-2; 416W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Max. forward voltage: 2.6V
Power dissipation: 416W
Reverse recovery time: 40ns
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
7+10.64 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DSB30C45HB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9F3762C81D8BF&compId=DSB30C45HB.pdf?ci_sign=b161982be0075e64c6fdfe6b02bf980f9890383b
DSB30C45HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO247-3; Ufmax: 0.54V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.54V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
60+1.2 EUR
63+1.14 EUR
66+1.09 EUR
120+1.06 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
DSB30C60PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9FC978F87D8BF&compId=DSB30C60PB.pdf?ci_sign=0d5a96217a129ccb8634621d64f68ba9d68ef08a
DSB30C60PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.64V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
49+1.47 EUR
55+1.3 EUR
56+1.29 EUR
59+1.22 EUR
61+1.17 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
DSB30C30PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9EF80D63918BF&compId=DSB30C30PB.pdf?ci_sign=e3b2e1d3b30d6cb3859e7bd8d5bcae0f32f2b233
DSB30C30PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 15Ax2; TO220AB; Ufmax: 0.44V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.44V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSB30C45PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9F8AD3DC0F8BF&compId=DSB30C45PB.pdf?ci_sign=bb791a637b6c85b6762bc6468860844fe4a645a6
DSB30C45PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.55V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXKN45N80C pVersion=0046&contRep=ZT&docId=005056AB82531ED99EFA0178ACB99820&compId=IXKN45N80C.pdf?ci_sign=3a67251ab3748ae8b17238230362fb2fdf304e04
IXKN45N80C
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; SOT227B; screw; 380W; 360nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 380W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Kind of channel: enhancement
Gate charge: 360nC
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 800ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXKR25N80C pVersion=0046&contRep=ZT&docId=005056AB82531EE995A9C35AC94E78BF&compId=IXKR25N80C.pdf?ci_sign=d4d0a062d2af329a2a082f1126544ec91bfbf883
IXKR25N80C
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Power dissipation: 250W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXKC25N80C littelfuse_discrete_mosfets_n-channel_super_junction_ixkc25n80c_datasheet.pdf.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
Reverse recovery time: 550ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH270N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81
IXTH270N04T4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Reverse recovery time: 48ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTP270N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81
IXTP270N04T4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Reverse recovery time: 48ns
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.33 EUR
19+3.9 EUR
22+3.26 EUR
24+3.07 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IXTA170N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BAC1FD1859D820&compId=IXTA(P)170N075T2.pdf?ci_sign=e01017447e298f17bee545516edbc47dab257dbe
IXTA170N075T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO263; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO263
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Reverse recovery time: 63ns
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.2 EUR
19+3.78 EUR
24+3 EUR
26+2.85 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IXTP170N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BAC1FD1859D820&compId=IXTA(P)170N075T2.pdf?ci_sign=e01017447e298f17bee545516edbc47dab257dbe
IXTP170N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO220AB; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Reverse recovery time: 63ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.95 EUR
23+3.17 EUR
24+2.99 EUR
50+2.89 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IXTP70N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4403F7996D820&compId=IXTA(P)70N075T2.pdf?ci_sign=0656d3eaf9da3cd72c5ad6e6291c34f2e42cafa2
IXTP70N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 46nC
Reverse recovery time: 48ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA70N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4403F7996D820&compId=IXTA(P)70N075T2.pdf?ci_sign=0656d3eaf9da3cd72c5ad6e6291c34f2e42cafa2
IXTA70N075T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 150W
Case: TO263
On-state resistance: 12mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 46nC
Reverse recovery time: 48ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA270N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAACCCA46F820&compId=IXTA270N04T4.pdf?ci_sign=5943278f7f5382b890ecedd75c0f652bcb39ba12
IXTA270N04T4
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO263
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Reverse recovery time: 48ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA270N04T4-7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAACCCA46F820&compId=IXTA270N04T4.pdf?ci_sign=5943278f7f5382b890ecedd75c0f652bcb39ba12
IXTA270N04T4-7
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263-7; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO263-7
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Reverse recovery time: 48ns
Produkt ist nicht verfügbar
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CLA80E1200HF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A0F0061E2F7B6143&compId=CLA80E1200HF.pdf?ci_sign=92b34dd44e4b0b4d546dbee16db25f9f13c9c6cf
CLA80E1200HF
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 38mA
Case: PLUS247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 765A
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.84 EUR
9+8.12 EUR
10+7.81 EUR
Mindestbestellmenge: 7
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VBO21-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FEA8DA268BC0C4&compId=VBO21-12NO7.pdf?ci_sign=516f358b6bb5485f53c65238575a620f94c8c208
VBO21-12NO7
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 20A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 120A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.33 EUR
6+12.73 EUR
10+12.24 EUR
Mindestbestellmenge: 5
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VBO21-08NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FEA4174B65C0C4&compId=VBO21-08NO7.pdf?ci_sign=7df11d659109a08237d18622c305a9c1418da0ec
VBO21-08NO7
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 20A
Max. forward impulse current: 120A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Produkt ist nicht verfügbar
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IXDN604SITR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXFK200N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD8B1AA6C45820&compId=IXFK(X)200N10P.pdf?ci_sign=9da439a6d66c4e98324b0d3df947cbc3c4d4b05f
IXFK200N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 235nC
On-state resistance: 7.5mΩ
Drain current: 200A
Drain-source voltage: 100V
Power dissipation: 830W
Produkt ist nicht verfügbar
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IXTY02N50D littelfuse-discrete-mosfets-ixt-02n50d-datasheet?assetguid=034fffd1-528e-4165-a830-650adaa583e5
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 200mA; Idm: 800mA; 25W; TO252
Polarisation: unipolar
Reverse recovery time: 1µs
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 25W
On-state resistance: 30Ω
Gate-source voltage: ±20V
Drain-source voltage: 500V
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Case: TO252
Produkt ist nicht verfügbar
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IXFH90N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB8178012838BF&compId=IXF_90N20X3.pdf?ci_sign=cd4eb69bd34dd603e68d972f3c7cec2471da9466 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFH90N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Technology: HiPerFET™; X3-Class
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.51 EUR
Mindestbestellmenge: 10
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IXTP48N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D511305565B820&compId=IXTA(P%2CQ)48N20T.pdf?ci_sign=96c4cd9fa46a40159c3190f1520d7e4bacc391d6
IXTP48N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 60nC
Reverse recovery time: 130ns
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.88 EUR
16+4.53 EUR
24+3.07 EUR
25+2.92 EUR
100+2.82 EUR
Mindestbestellmenge: 15
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IXGT16N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38
IXGT16N170A
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO268
Technology: NPT
Mounting: SMD
Gate charge: 70nC
Turn-on time: 35ns
Turn-off time: 298ns
Collector current: 11A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 190W
Collector-emitter voltage: 1.7kV
Produkt ist nicht verfügbar
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IXGT16N170 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAB99F1D44C151BF&compId=IXGH16N170-DTE.pdf?ci_sign=03a18b66e5d35198e9e236f78cf7b52f7cc4d616
IXGT16N170
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO268
Technology: NPT
Mounting: SMD
Gate charge: 78nC
Turn-on time: 90ns
Turn-off time: 1.6µs
Collector current: 16A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 190W
Collector-emitter voltage: 1.7kV
Produkt ist nicht verfügbar
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IXGT16N170AH1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38
IXGT16N170AH1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO268
Technology: NPT
Mounting: SMD
Gate charge: 70nC
Turn-on time: 35ns
Turn-off time: 298ns
Collector current: 11A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 190W
Collector-emitter voltage: 1.7kV
Produkt ist nicht verfügbar
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