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IXTH16P60P IXTH16P60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E619805AB38BF&compId=IXT_16P60P.pdf?ci_sign=0e81182102286b9c0016837af235ac11d15c7957 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 440ns
On-state resistance: 720mΩ
Type of transistor: P-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -600V
Drain current: -16A
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FDA217 FDA217 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
Type of integrated circuit: driver
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: MOSFET gate driver
auf Bestellung 90 Stücke:
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11+6.94 EUR
22+3.36 EUR
23+3.17 EUR
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IXKH47N60C IXKH47N60C IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC739820&compId=IXKH47N60C.pdf?ci_sign=43bb435c43c10b1bc34c0027e601cdcadb46f0c7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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DSA120X200LB-TRR IXYS Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W
Load current: 65A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
Power dissipation: 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. off-state voltage: 200V
Max. forward voltage: 0.67V
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CPC1966YX8 CPC1966YX8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82340C7&compId=CPC1966YX8.pdf?ci_sign=5ac36dc282a63f92d43596d60647d4c843e2c612 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Turn-on time: 20µs
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IXTP3N50D2 IXTP3N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBCC5F1A4EB820&compId=IXTA(P)3N50D2.pdf?ci_sign=1433b6210e8ee4e73eac19dda6d08b4459ecca40 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Power dissipation: 125W
Gate charge: 1.07µC
Reverse recovery time: 24ns
auf Bestellung 277 Stücke:
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14+5.35 EUR
20+3.65 EUR
21+3.45 EUR
250+3.30 EUR
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IXTY3N50P IXTY3N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 70W
Gate charge: 9.3nC
Technology: Polar™
Reverse recovery time: 400ns
auf Bestellung 104 Stücke:
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104+0.69 EUR
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IXTA3N50P IXTA3N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 70W
Gate charge: 9.3nC
Technology: Polar™
Reverse recovery time: 400ns
auf Bestellung 10 Stücke:
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10+7.15 EUR
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IXTA3N50D2 IXTA3N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBCC5F1A4EB820&compId=IXTA(P)3N50D2.pdf?ci_sign=1433b6210e8ee4e73eac19dda6d08b4459ecca40 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO263
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Power dissipation: 125W
Gate charge: 1.07µC
Reverse recovery time: 24ns
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IXDF602PI IXDF602PI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 1053 Stücke:
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32+2.29 EUR
52+1.40 EUR
68+1.06 EUR
72+1.00 EUR
100+0.97 EUR
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IXDI602PI IXDI602PI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 979 Stücke:
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27+2.73 EUR
43+1.67 EUR
70+1.03 EUR
74+0.97 EUR
500+0.93 EUR
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IXTN32P60P IXTN32P60P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE797949C94D6AA0748&compId=IXTN32P60P.pdf?ci_sign=035c5f108d26aae1df24efb3d52a2cd107ac837f Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Case: SOT227B
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: -96A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Power dissipation: 890W
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PLA172P PLA172P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC6FA0C7&compId=PLA172P.pdf?ci_sign=0dbbf0b9b59386dee07fd42b26cc2ab02a1703a1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Mounting: SMT
Operating temperature: -40...105°C
Kind of output: MOSFET
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 800V AC; max. 800V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 50Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.59mm
Insulation voltage: 5kV
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PLA172PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC6FA0C7&compId=PLA172P.pdf?ci_sign=0dbbf0b9b59386dee07fd42b26cc2ab02a1703a1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Mounting: SMT
Operating temperature: -40...105°C
Kind of output: MOSFET
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 800V AC; max. 800V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 50Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.59mm
Insulation voltage: 5kV
Produkt ist nicht verfügbar
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IXFR40N90P IXFR40N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C7F820&compId=IXFR40N90P.pdf?ci_sign=dc315346ddb98b058b9e3318608cbac74407300d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 230nC
Kind of channel: enhancement
Drain-source voltage: 900V
Drain current: 21A
On-state resistance: 0.25Ω
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MIXA225PF1200TSF IXYS MIXA225PF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Application: fans; for pump; for UPS; motors
Power dissipation: 1.1kW
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
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MIXA225RF1200TSF IXYS MIXA225RF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: boost chopper; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
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MDNA425P2200PTSF IXYS Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 2.2kV
Load current: 425A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
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MDNA600P2200PTSF IXYS Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Max. off-state voltage: 2.2kV
Load current: 600A
Semiconductor structure: double series
Max. forward impulse current: 15kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
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MDNA300P2200PTSF IXYS Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Max. off-state voltage: 2.2kV
Load current: 300A
Semiconductor structure: double series
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
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MIXA300PF1200TSF IXYS MIXA300PF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 325A
Pulsed collector current: 650A
Application: fans; for pump; for UPS; motors
Power dissipation: 1.5kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
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MIXG490PF1200TSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
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MIXA450PF1200TSF IXYS MIXA450PF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Application: fans; for pump; for UPS; motors
Power dissipation: 2.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
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MIXG490PF1200PTSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
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IX9907NTR IX9907NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E7AAE9A4C80C4&compId=IX9907.pdf?ci_sign=1c528a18bc3dd6c5a1da43fa7fa252678bebf06f Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
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DSEE30-12A DSEE30-12A IXYS DSEE30-12A.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Semiconductor structure: double series
Reverse recovery time: 30ns
Max. forward impulse current: 200A
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.5V
Load current: 30A
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
4+20.02 EUR
10+19.25 EUR
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FUE30-12N1 FUE30-12N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE987F56DD7F90498BF&compId=FUE30-12N1.pdf?ci_sign=17999c248a3339e7beb8cafdfeb675816333a55a Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 90A; THT
Max. forward impulse current: 90A
Electrical mounting: THT
Type of bridge rectifier: three-phase
Case: ISOPLUS i4-pac™ x024a
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.37V
Load current: 30A
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IXGX100N170 IXGX100N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0A6DAFB799820&compId=IXGK(X)100N170.pdf?ci_sign=c8053da6d72a2c79586ce8a850d84b1d66a7da31 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 285ns
Turn-off time: 720ns
Features of semiconductor devices: high voltage
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LDA102STR LDA102STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB0BE0ABDC1EC&compId=LDA102.pdf?ci_sign=e209e23a920edbbe96409710a7313a9fe8672080 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 50mA
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 1
auf Bestellung 798 Stücke:
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81+0.89 EUR
97+0.74 EUR
125+0.57 EUR
160+0.45 EUR
169+0.42 EUR
500+0.41 EUR
Mindestbestellmenge: 81
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VMM300-03F IXYS VMM300-03F.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 300V; 220A; Y3-DCB; Idm: 1.16kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 300V
Drain current: 220A
Case: Y3-DCB
Topology: MOSFET half-bridge
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 1.16kA
Power dissipation: 1.5kW
Technology: HiPerFET™
Gate-source voltage: ±20V
Mechanical mounting: screw
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IXXH80N65B4 IXXH80N65B4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9E035A3E93820&compId=IXXH80N65B4.pdf?ci_sign=87dde9e4c61408c192916628afc8e7dc723e51a1 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
Turn-on time: 125ns
Turn-off time: 222ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 0.12µC
Technology: GenX4™; Trench; XPT™
Mounting: THT
Case: TO247-3
auf Bestellung 300 Stücke:
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7+10.98 EUR
12+6.03 EUR
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IXGK100N170 IXGK100N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0A6DAFB799820&compId=IXGK(X)100N170.pdf?ci_sign=c8053da6d72a2c79586ce8a850d84b1d66a7da31 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 600A
Turn-on time: 285ns
Turn-off time: 720ns
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 425nC
Technology: NPT
Case: TO264
Produkt ist nicht verfügbar
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IXA12IF1200HB IXA12IF1200HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1DC4F060958BF&compId=IXA12IF1200HB.pdf?ci_sign=299bea4b8317f292597b6ce020d3fb5193cac378 Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Collector current: 13A
Case: TO247-3
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.08 EUR
20+3.66 EUR
21+3.46 EUR
Mindestbestellmenge: 12
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IXA37IF1200HJ IXA37IF1200HJ IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F187B680865820&compId=IXA37IF1200HJ.pdf?ci_sign=d85df4621c1de3de20b1ce19f7cad76b3d699e55 Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Collector current: 37A
Case: PLUS247™
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 195W
Kind of package: tube
Gate charge: 106nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
4+20.28 EUR
Mindestbestellmenge: 4
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IXA4I1200UC-TRL IXYS IXA4I1200UC.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252
Collector current: 9A
Case: TO252
Technology: XPT™
Power dissipation: 45W
Gate charge: 12nC
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Turn-on time: 70ns
Turn-off time: 250ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA12IF1200PB IXA12IF1200PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB63A1675A5820&compId=IXA12IF1200PB.pdf?ci_sign=3a3b930c74ed5ec2abbc2b27f4648ec3ddaa92c4 Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO220-3
Collector current: 13A
Case: TO220-3
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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ITF48IF1200HR ITF48IF1200HR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A08E73B4D71FB820&compId=ITF48IF1200HR.pdf?ci_sign=1fd50b58ff10a606c5698d894f8e3a9430c43cbf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™
Collector current: 48A
Case: ISO247™
Technology: Trench; XPT™
Power dissipation: 390W
Kind of package: tube
Gate charge: 175nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 460ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA27IF1200HJ IXA27IF1200HJ IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99ACFE35DEFE79820&compId=IXA27IF1200HJ.pdf?ci_sign=7d7443a73e4eebd7bc2cc9e0af76a6cac3154dfa Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 27A; 150W; PLUS247™
Collector current: 27A
Case: PLUS247™
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 150W
Kind of package: tube
Gate charge: 76nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA20IF1200HB IXA20IF1200HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB94C0D704F820&compId=IXA20IF1200HB.pdf?ci_sign=f2c28f3fc9942fb2c8c7f7fa7414c698c8c5e144 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO247-3
Collector current: 22A
Case: TO247-3
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA20I1200PB IXA20I1200PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB8BBC3A9FB820&compId=IXA20I1200PB.pdf?ci_sign=6dd16cf67d25fa1a3938eb8ec45c2d995057c8f8 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Collector current: 22A
Case: TO220-3
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA17IF1200HJ IXA17IF1200HJ IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB82D3B22D5820&compId=IXA17IF1200HJ.pdf?ci_sign=5f8dcaeccaed5bbf63ae08779ef9c5c0f87a4868 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 18A; 100W; PLUS247™
Collector current: 18A
Case: PLUS247™
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 100W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA45IF1200HB IXA45IF1200HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD1FCD2218D820&compId=IXA45IF1200HB.pdf?ci_sign=a4799b66b629553e978da5dfb18f353571f2b1fb Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 45A; 325W; TO247-3
Collector current: 45A
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Power dissipation: 325W
Kind of package: tube
Gate charge: 106nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA4IF1200TC IXA4IF1200TC IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB42E85CA15820&compId=IXA4IF1200TC.pdf?ci_sign=9b440a49c097b86f76f829b7b6ea9edc28db0525 Category: SMD IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 5A; 45W; TO268
Collector current: 5A
Case: TO268
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 45W
Kind of package: tube
Gate charge: 12nC
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA55I1200HJ IXA55I1200HJ IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD44DED58B5820&compId=IXA55I1200HJ.pdf?ci_sign=f5b827cc15e451293be56c855e8b0bab6cbfdbec Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 54A; 290W; PLUS247™
Collector current: 54A
Case: PLUS247™
Technology: GenX3™; Planar; XPT™
Power dissipation: 290W
Kind of package: tube
Gate charge: 0.19µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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MIXA61H1200ED IXYS MIXA61H1200ED.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 290W
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
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IXG70IF1200NA IXYS Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 86A
Case: SOT227B
Electrical mounting: screw
Technology: X2PT
Mechanical mounting: screw
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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MIXA10W1200TML IXYS MIXA10W1200TML.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 12A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 65W
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Application: fans; for pump; motors
Produkt ist nicht verfügbar
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MIXA60W1200TED IXYS MIXA60W1200TED.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 290W
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
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MIXG70W1200TED IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 79A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MIXA30W1200TED IXYS MIXA30W1200TED.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 150W
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
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MIXA30W1200TML IXYS MIXA30W1200TML.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 150W
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Application: fans; for pump; motors
Produkt ist nicht verfügbar
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MIXA40W1200TED IXYS MIXA40W1200TED.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 195W
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
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MIXA41W1200ED IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MIXA80R1200VA IXYS MIXA80R1200VA.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 390W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: V1-A-Pack
Electrical mounting: FASTON connectors
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: fans; for pump; motors; photovoltaics
Produkt ist nicht verfügbar
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MIXA80W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MIXA80W1200TED IXYS MIXA80W1200TED.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
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MIXA81H1200EH IXYS MIXA81H1200EH.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
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MIXA20W1200TML IXYS MIXA20W1200TML.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 20A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 100W
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Application: fans; for pump; motors
Produkt ist nicht verfügbar
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MIXA40W1200TML IXYS MIXA40W1200TML.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 195W
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Application: fans; for pump; motors
Produkt ist nicht verfügbar
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MIXA80W1200TEH IXYS MIXA80W1200TEH.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
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IXTH16P60P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E619805AB38BF&compId=IXT_16P60P.pdf?ci_sign=0e81182102286b9c0016837af235ac11d15c7957
IXTH16P60P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 440ns
On-state resistance: 720mΩ
Type of transistor: P-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -600V
Drain current: -16A
Produkt ist nicht verfügbar
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FDA217 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b
FDA217
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
Type of integrated circuit: driver
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: MOSFET gate driver
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.94 EUR
22+3.36 EUR
23+3.17 EUR
Mindestbestellmenge: 11
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IXKH47N60C pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC739820&compId=IXKH47N60C.pdf?ci_sign=43bb435c43c10b1bc34c0027e601cdcadb46f0c7
IXKH47N60C
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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DSA120X200LB-TRR
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W
Load current: 65A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
Power dissipation: 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. off-state voltage: 200V
Max. forward voltage: 0.67V
Produkt ist nicht verfügbar
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CPC1966YX8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82340C7&compId=CPC1966YX8.pdf?ci_sign=5ac36dc282a63f92d43596d60647d4c843e2c612
CPC1966YX8
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Turn-on time: 20µs
Produkt ist nicht verfügbar
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IXTP3N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBCC5F1A4EB820&compId=IXTA(P)3N50D2.pdf?ci_sign=1433b6210e8ee4e73eac19dda6d08b4459ecca40
IXTP3N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Power dissipation: 125W
Gate charge: 1.07µC
Reverse recovery time: 24ns
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.35 EUR
20+3.65 EUR
21+3.45 EUR
250+3.30 EUR
Mindestbestellmenge: 14
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IXTY3N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4
IXTY3N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 70W
Gate charge: 9.3nC
Technology: Polar™
Reverse recovery time: 400ns
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
104+0.69 EUR
Mindestbestellmenge: 104
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IXTA3N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4
IXTA3N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 70W
Gate charge: 9.3nC
Technology: Polar™
Reverse recovery time: 400ns
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
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IXTA3N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBCC5F1A4EB820&compId=IXTA(P)3N50D2.pdf?ci_sign=1433b6210e8ee4e73eac19dda6d08b4459ecca40
IXTA3N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO263
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Power dissipation: 125W
Gate charge: 1.07µC
Reverse recovery time: 24ns
Produkt ist nicht verfügbar
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IXDF602PI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDF602PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 1053 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.29 EUR
52+1.40 EUR
68+1.06 EUR
72+1.00 EUR
100+0.97 EUR
Mindestbestellmenge: 32
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IXDI602PI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDI602PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 979 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.73 EUR
43+1.67 EUR
70+1.03 EUR
74+0.97 EUR
500+0.93 EUR
Mindestbestellmenge: 27
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IXTN32P60P pVersion=0046&contRep=ZT&docId=005056AB752F1EE797949C94D6AA0748&compId=IXTN32P60P.pdf?ci_sign=035c5f108d26aae1df24efb3d52a2cd107ac837f
IXTN32P60P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Case: SOT227B
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: -96A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Power dissipation: 890W
Produkt ist nicht verfügbar
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PLA172P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC6FA0C7&compId=PLA172P.pdf?ci_sign=0dbbf0b9b59386dee07fd42b26cc2ab02a1703a1
PLA172P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Mounting: SMT
Operating temperature: -40...105°C
Kind of output: MOSFET
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 800V AC; max. 800V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 50Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.59mm
Insulation voltage: 5kV
Produkt ist nicht verfügbar
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PLA172PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC6FA0C7&compId=PLA172P.pdf?ci_sign=0dbbf0b9b59386dee07fd42b26cc2ab02a1703a1
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Mounting: SMT
Operating temperature: -40...105°C
Kind of output: MOSFET
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 800V AC; max. 800V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 50Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.59mm
Insulation voltage: 5kV
Produkt ist nicht verfügbar
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IXFR40N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C7F820&compId=IXFR40N90P.pdf?ci_sign=dc315346ddb98b058b9e3318608cbac74407300d
IXFR40N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 230nC
Kind of channel: enhancement
Drain-source voltage: 900V
Drain current: 21A
On-state resistance: 0.25Ω
Produkt ist nicht verfügbar
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MIXA225PF1200TSF MIXA225PF1200TSF.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Application: fans; for pump; for UPS; motors
Power dissipation: 1.1kW
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Produkt ist nicht verfügbar
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MIXA225RF1200TSF MIXA225RF1200TSF.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: boost chopper; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Produkt ist nicht verfügbar
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MDNA425P2200PTSF
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 2.2kV
Load current: 425A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
Produkt ist nicht verfügbar
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MDNA600P2200PTSF
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Max. off-state voltage: 2.2kV
Load current: 600A
Semiconductor structure: double series
Max. forward impulse current: 15kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
Produkt ist nicht verfügbar
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MDNA300P2200PTSF
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Max. off-state voltage: 2.2kV
Load current: 300A
Semiconductor structure: double series
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
Produkt ist nicht verfügbar
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MIXA300PF1200TSF MIXA300PF1200TSF.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 325A
Pulsed collector current: 650A
Application: fans; for pump; for UPS; motors
Power dissipation: 1.5kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Produkt ist nicht verfügbar
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MIXG490PF1200TSF
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Produkt ist nicht verfügbar
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MIXA450PF1200TSF MIXA450PF1200TSF.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Application: fans; for pump; for UPS; motors
Power dissipation: 2.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Produkt ist nicht verfügbar
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MIXG490PF1200PTSF
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Produkt ist nicht verfügbar
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IX9907NTR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E7AAE9A4C80C4&compId=IX9907.pdf?ci_sign=1c528a18bc3dd6c5a1da43fa7fa252678bebf06f
IX9907NTR
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
Produkt ist nicht verfügbar
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DSEE30-12A DSEE30-12A.PDF
DSEE30-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Semiconductor structure: double series
Reverse recovery time: 30ns
Max. forward impulse current: 200A
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.5V
Load current: 30A
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.02 EUR
10+19.25 EUR
Mindestbestellmenge: 4
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FUE30-12N1 pVersion=0046&contRep=ZT&docId=005056AB82531EE987F56DD7F90498BF&compId=FUE30-12N1.pdf?ci_sign=17999c248a3339e7beb8cafdfeb675816333a55a
FUE30-12N1
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 90A; THT
Max. forward impulse current: 90A
Electrical mounting: THT
Type of bridge rectifier: three-phase
Case: ISOPLUS i4-pac™ x024a
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.37V
Load current: 30A
Produkt ist nicht verfügbar
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IXGX100N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0A6DAFB799820&compId=IXGK(X)100N170.pdf?ci_sign=c8053da6d72a2c79586ce8a850d84b1d66a7da31
IXGX100N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 285ns
Turn-off time: 720ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LDA102STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB0BE0ABDC1EC&compId=LDA102.pdf?ci_sign=e209e23a920edbbe96409710a7313a9fe8672080
LDA102STR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 50mA
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 1
auf Bestellung 798 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
97+0.74 EUR
125+0.57 EUR
160+0.45 EUR
169+0.42 EUR
500+0.41 EUR
Mindestbestellmenge: 81
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VMM300-03F VMM300-03F.pdf
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 300V; 220A; Y3-DCB; Idm: 1.16kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 300V
Drain current: 220A
Case: Y3-DCB
Topology: MOSFET half-bridge
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 1.16kA
Power dissipation: 1.5kW
Technology: HiPerFET™
Gate-source voltage: ±20V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXXH80N65B4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9E035A3E93820&compId=IXXH80N65B4.pdf?ci_sign=87dde9e4c61408c192916628afc8e7dc723e51a1
IXXH80N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
Turn-on time: 125ns
Turn-off time: 222ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 0.12µC
Technology: GenX4™; Trench; XPT™
Mounting: THT
Case: TO247-3
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.98 EUR
12+6.03 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXGK100N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0A6DAFB799820&compId=IXGK(X)100N170.pdf?ci_sign=c8053da6d72a2c79586ce8a850d84b1d66a7da31
IXGK100N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 600A
Turn-on time: 285ns
Turn-off time: 720ns
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 425nC
Technology: NPT
Case: TO264
Produkt ist nicht verfügbar
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IXA12IF1200HB pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1DC4F060958BF&compId=IXA12IF1200HB.pdf?ci_sign=299bea4b8317f292597b6ce020d3fb5193cac378
IXA12IF1200HB
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Collector current: 13A
Case: TO247-3
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.08 EUR
20+3.66 EUR
21+3.46 EUR
Mindestbestellmenge: 12
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IXA37IF1200HJ pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F187B680865820&compId=IXA37IF1200HJ.pdf?ci_sign=d85df4621c1de3de20b1ce19f7cad76b3d699e55
IXA37IF1200HJ
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Collector current: 37A
Case: PLUS247™
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 195W
Kind of package: tube
Gate charge: 106nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.28 EUR
Mindestbestellmenge: 4
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IXA4I1200UC-TRL IXA4I1200UC.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252
Collector current: 9A
Case: TO252
Technology: XPT™
Power dissipation: 45W
Gate charge: 12nC
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Turn-on time: 70ns
Turn-off time: 250ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA12IF1200PB pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB63A1675A5820&compId=IXA12IF1200PB.pdf?ci_sign=3a3b930c74ed5ec2abbc2b27f4648ec3ddaa92c4
IXA12IF1200PB
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO220-3
Collector current: 13A
Case: TO220-3
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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ITF48IF1200HR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A08E73B4D71FB820&compId=ITF48IF1200HR.pdf?ci_sign=1fd50b58ff10a606c5698d894f8e3a9430c43cbf
ITF48IF1200HR
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™
Collector current: 48A
Case: ISO247™
Technology: Trench; XPT™
Power dissipation: 390W
Kind of package: tube
Gate charge: 175nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 460ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA27IF1200HJ pVersion=0046&contRep=ZT&docId=005056AB82531ED99ACFE35DEFE79820&compId=IXA27IF1200HJ.pdf?ci_sign=7d7443a73e4eebd7bc2cc9e0af76a6cac3154dfa
IXA27IF1200HJ
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 27A; 150W; PLUS247™
Collector current: 27A
Case: PLUS247™
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 150W
Kind of package: tube
Gate charge: 76nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA20IF1200HB pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB94C0D704F820&compId=IXA20IF1200HB.pdf?ci_sign=f2c28f3fc9942fb2c8c7f7fa7414c698c8c5e144
IXA20IF1200HB
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO247-3
Collector current: 22A
Case: TO247-3
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA20I1200PB pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB8BBC3A9FB820&compId=IXA20I1200PB.pdf?ci_sign=6dd16cf67d25fa1a3938eb8ec45c2d995057c8f8
IXA20I1200PB
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Collector current: 22A
Case: TO220-3
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA17IF1200HJ pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB82D3B22D5820&compId=IXA17IF1200HJ.pdf?ci_sign=5f8dcaeccaed5bbf63ae08779ef9c5c0f87a4868
IXA17IF1200HJ
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 18A; 100W; PLUS247™
Collector current: 18A
Case: PLUS247™
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 100W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA45IF1200HB pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD1FCD2218D820&compId=IXA45IF1200HB.pdf?ci_sign=a4799b66b629553e978da5dfb18f353571f2b1fb
IXA45IF1200HB
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 45A; 325W; TO247-3
Collector current: 45A
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Power dissipation: 325W
Kind of package: tube
Gate charge: 106nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA4IF1200TC pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB42E85CA15820&compId=IXA4IF1200TC.pdf?ci_sign=9b440a49c097b86f76f829b7b6ea9edc28db0525
IXA4IF1200TC
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 5A; 45W; TO268
Collector current: 5A
Case: TO268
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 45W
Kind of package: tube
Gate charge: 12nC
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA55I1200HJ pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD44DED58B5820&compId=IXA55I1200HJ.pdf?ci_sign=f5b827cc15e451293be56c855e8b0bab6cbfdbec
IXA55I1200HJ
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 54A; 290W; PLUS247™
Collector current: 54A
Case: PLUS247™
Technology: GenX3™; Planar; XPT™
Power dissipation: 290W
Kind of package: tube
Gate charge: 0.19µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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MIXA61H1200ED MIXA61H1200ED.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 290W
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
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IXG70IF1200NA
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 86A
Case: SOT227B
Electrical mounting: screw
Technology: X2PT
Mechanical mounting: screw
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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MIXA10W1200TML MIXA10W1200TML.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 12A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 65W
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Application: fans; for pump; motors
Produkt ist nicht verfügbar
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MIXA60W1200TED MIXA60W1200TED.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 290W
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
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MIXG70W1200TED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 79A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MIXA30W1200TED MIXA30W1200TED.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 150W
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
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MIXA30W1200TML MIXA30W1200TML.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 150W
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Application: fans; for pump; motors
Produkt ist nicht verfügbar
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MIXA40W1200TED MIXA40W1200TED.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 195W
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
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MIXA41W1200ED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MIXA80R1200VA MIXA80R1200VA.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 390W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: V1-A-Pack
Electrical mounting: FASTON connectors
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: fans; for pump; motors; photovoltaics
Produkt ist nicht verfügbar
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MIXA80W1200PTEH
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MIXA80W1200TED MIXA80W1200TED.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
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MIXA81H1200EH MIXA81H1200EH.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
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MIXA20W1200TML MIXA20W1200TML.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 20A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 100W
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Application: fans; for pump; motors
Produkt ist nicht verfügbar
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MIXA40W1200TML MIXA40W1200TML.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 195W
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Application: fans; for pump; motors
Produkt ist nicht verfügbar
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MIXA80W1200TEH MIXA80W1200TEH.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
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