Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTH16P60P | IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Reverse recovery time: 440ns On-state resistance: 720mΩ Type of transistor: P-MOSFET Power dissipation: 460W Polarisation: unipolar Gate charge: 92nC Technology: PolarP™ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: -600V Drain current: -16A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FDA217 | IXYS |
![]() Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2 Mounting: THT Operating temperature: -40...85°C Case: DIP8 Type of integrated circuit: driver Number of channels: 2 Kind of package: tube Kind of integrated circuit: MOSFET gate driver |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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IXKH47N60C | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 290W Case: TO247-3 On-state resistance: 70mΩ Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: super junction coolmos |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
DSA120X200LB-TRR | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W Load current: 65A x2 Semiconductor structure: double independent Max. forward impulse current: 700A Power dissipation: 185W Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: SMPD Max. off-state voltage: 200V Max. forward voltage: 0.67V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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CPC1966YX8 | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase Type of relay: solid state Control current max.: 50mA Max. operating current: 3A Switched voltage: max. 800V AC Relay variant: 1-phase Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV Turn-on time: 20µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTP3N50D2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Case: TO220AB On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: depletion Power dissipation: 125W Gate charge: 1.07µC Reverse recovery time: 24ns |
auf Bestellung 277 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTY3N50P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Case: TO252 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Power dissipation: 70W Gate charge: 9.3nC Technology: Polar™ Reverse recovery time: 400ns |
auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA3N50P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Case: TO263 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Power dissipation: 70W Gate charge: 9.3nC Technology: Polar™ Reverse recovery time: 400ns |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA3N50D2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Case: TO263 On-state resistance: 1.5Ω Mounting: SMD Kind of package: tube Kind of channel: depletion Power dissipation: 125W Gate charge: 1.07µC Reverse recovery time: 24ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXDF602PI | IXYS |
![]() Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting; non-inverting Turn-on time: 93ns Turn-off time: 93ns |
auf Bestellung 1053 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDI602PI | IXYS |
![]() Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-on time: 93ns Turn-off time: 93ns |
auf Bestellung 979 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTN32P60P | IXYS |
![]() Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A Case: SOT227B Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Gate charge: 196nC Technology: PolarP™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: -96A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Reverse recovery time: 480ns Drain-source voltage: -600V Drain current: -32A On-state resistance: 0.35Ω Power dissipation: 890W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PLA172P | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC Mounting: SMT Operating temperature: -40...105°C Kind of output: MOSFET Contacts configuration: SPST-NO Max. operating current: 0.1A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 800V AC; max. 800V DC Control current max.: 50mA Manufacturer series: OptoMOS On-state resistance: 50Ω Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.65x6.35x2.59mm Insulation voltage: 5kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
PLA172PTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC Mounting: SMT Operating temperature: -40...105°C Kind of output: MOSFET Contacts configuration: SPST-NO Max. operating current: 0.1A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 800V AC; max. 800V DC Control current max.: 50mA Manufacturer series: OptoMOS On-state resistance: 50Ω Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.65x6.35x2.59mm Insulation voltage: 5kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IXFR40N90P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™ Case: ISOPLUS247™ Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Gate charge: 230nC Kind of channel: enhancement Drain-source voltage: 900V Drain current: 21A On-state resistance: 0.25Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
MIXA225PF1200TSF | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A Electrical mounting: Press-in PCB Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 250A Pulsed collector current: 500A Application: fans; for pump; for UPS; motors Power dissipation: 1.1kW Mechanical mounting: screw Technology: Sonic FRD™; XPT™ Topology: IGBT half-bridge; NTC thermistor Type of semiconductor module: IGBT Case: SimBus F |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MIXA225RF1200TSF | IXYS |
![]() Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 250A Pulsed collector current: 500A Power dissipation: 1.1kW Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Sonic FRD™; XPT™ Topology: boost chopper; NTC thermistor Type of semiconductor module: IGBT Case: SimBus F |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MDNA425P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA Max. off-state voltage: 2.2kV Load current: 425A Semiconductor structure: double series Max. forward impulse current: 10kA Electrical mounting: Press-Fit Mechanical mounting: screw Type of semiconductor module: diode Case: SimBus F |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MDNA600P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA Max. off-state voltage: 2.2kV Load current: 600A Semiconductor structure: double series Max. forward impulse current: 15kA Electrical mounting: Press-Fit Mechanical mounting: screw Type of semiconductor module: diode Case: SimBus F |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MDNA300P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA Max. off-state voltage: 2.2kV Load current: 300A Semiconductor structure: double series Max. forward impulse current: 8kA Electrical mounting: Press-Fit Mechanical mounting: screw Type of semiconductor module: diode Case: SimBus F |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MIXA300PF1200TSF | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 325A Pulsed collector current: 650A Application: fans; for pump; for UPS; motors Power dissipation: 1.5kW Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Sonic FRD™; XPT™ Topology: IGBT half-bridge; NTC thermistor Type of semiconductor module: IGBT Case: SimBus F |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MIXG490PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: X2PT Topology: IGBT half-bridge; NTC thermistor Type of semiconductor module: IGBT Case: SimBus F |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MIXA450PF1200TSF | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Application: fans; for pump; for UPS; motors Power dissipation: 2.1kW Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Sonic FRD™; XPT™ Topology: IGBT half-bridge; NTC thermistor Type of semiconductor module: IGBT Case: SimBus F |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MIXG490PF1200PTSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: X2PT Topology: IGBT half-bridge; NTC thermistor Type of semiconductor module: IGBT Case: SimBus F |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IX9907NTR | IXYS |
![]() Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Mounting: SMD Kind of package: reel; tape Output current: 1.7A Integrated circuit features: linear dimming; PWM Operating voltage: 650V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DSEE30-12A | IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W Semiconductor structure: double series Reverse recovery time: 30ns Max. forward impulse current: 200A Power dissipation: 165W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ Mounting: THT Case: TO247-3 Max. off-state voltage: 1.2kV Max. forward voltage: 2.5V Load current: 30A |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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FUE30-12N1 | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 90A; THT Max. forward impulse current: 90A Electrical mounting: THT Type of bridge rectifier: three-phase Case: ISOPLUS i4-pac™ x024a Max. off-state voltage: 1.2kV Max. forward voltage: 2.37V Load current: 30A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXGX100N170 | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™ Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 100A Power dissipation: 830W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT Gate charge: 425nC Kind of package: tube Turn-on time: 285ns Turn-off time: 720ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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LDA102STR | IXYS |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 50mA Kind of output: Darlington Insulation voltage: 3.75kV CTR@If: 50-350%@1mA Trigger current: 50mA Type of optocoupler: optocoupler Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Number of channels: 1 |
auf Bestellung 798 Stücke: Lieferzeit 14-21 Tag (e) |
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VMM300-03F | IXYS |
![]() Description: Module; transistor/transistor; 300V; 220A; Y3-DCB; Idm: 1.16kA Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 300V Drain current: 220A Case: Y3-DCB Topology: MOSFET half-bridge Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 7.4mΩ Pulsed drain current: 1.16kA Power dissipation: 1.5kW Technology: HiPerFET™ Gate-source voltage: ±20V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IXXH80N65B4 | IXYS |
![]() Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 80A Pulsed collector current: 430A Turn-on time: 125ns Turn-off time: 222ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 0.12µC Technology: GenX4™; Trench; XPT™ Mounting: THT Case: TO247-3 |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGK100N170 | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264 Mounting: THT Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 600A Turn-on time: 285ns Turn-off time: 720ns Type of transistor: IGBT Power dissipation: 830W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 425nC Technology: NPT Case: TO264 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXA12IF1200HB | IXYS |
![]() Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3 Collector current: 13A Case: TO247-3 Technology: Planar; Sonic FRD™; XPT™ Power dissipation: 85W Kind of package: tube Gate charge: 27nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 30A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
auf Bestellung 268 Stücke: Lieferzeit 14-21 Tag (e) |
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IXA37IF1200HJ | IXYS |
![]() Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™ Collector current: 37A Case: PLUS247™ Technology: Planar; Sonic FRD™; XPT™ Power dissipation: 195W Kind of package: tube Gate charge: 106nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 105A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) |
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IXA4I1200UC-TRL | IXYS |
![]() Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252 Collector current: 9A Case: TO252 Technology: XPT™ Power dissipation: 45W Gate charge: 12nC Mounting: SMD Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 9A Turn-on time: 70ns Turn-off time: 250ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IXA12IF1200PB | IXYS |
![]() Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO220-3 Collector current: 13A Case: TO220-3 Technology: Planar; Sonic FRD™; XPT™ Power dissipation: 85W Kind of package: tube Gate charge: 27nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 30A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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ITF48IF1200HR | IXYS |
![]() Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™ Collector current: 48A Case: ISO247™ Technology: Trench; XPT™ Power dissipation: 390W Kind of package: tube Gate charge: 175nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 160A Turn-on time: 52ns Turn-off time: 460ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXA27IF1200HJ | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 27A; 150W; PLUS247™ Collector current: 27A Case: PLUS247™ Technology: GenX3™; Planar; Sonic FRD™; XPT™ Power dissipation: 150W Kind of package: tube Gate charge: 76nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 75A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXA20IF1200HB | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO247-3 Collector current: 22A Case: TO247-3 Technology: GenX3™; Planar; Sonic FRD™; XPT™ Power dissipation: 165W Kind of package: tube Gate charge: 47nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 45A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXA20I1200PB | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3 Collector current: 22A Case: TO220-3 Technology: GenX3™; Planar; Sonic FRD™; XPT™ Power dissipation: 165W Kind of package: tube Gate charge: 47nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 45A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXA17IF1200HJ | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 18A; 100W; PLUS247™ Collector current: 18A Case: PLUS247™ Technology: GenX3™; Planar; Sonic FRD™; XPT™ Power dissipation: 100W Kind of package: tube Gate charge: 47nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 45A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXA45IF1200HB | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 45A; 325W; TO247-3 Collector current: 45A Case: TO247-3 Technology: GenX3™; Planar; XPT™ Power dissipation: 325W Kind of package: tube Gate charge: 106nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 105A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXA4IF1200TC | IXYS |
![]() Description: Transistor: IGBT; Planar; 1.2kV; 5A; 45W; TO268 Collector current: 5A Case: TO268 Technology: Planar; Sonic FRD™; XPT™ Power dissipation: 45W Kind of package: tube Gate charge: 12nC Mounting: SMD Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 9A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXA55I1200HJ | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 54A; 290W; PLUS247™ Collector current: 54A Case: PLUS247™ Technology: GenX3™; Planar; XPT™ Power dissipation: 290W Kind of package: tube Gate charge: 0.19µC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 150A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
MIXA61H1200ED | IXYS |
![]() Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Collector current: 60A Case: E2-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 290W Gate-emitter voltage: ±20V Pulsed collector current: 150A Application: motors; photovoltaics |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IXG70IF1200NA | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 86A Case: SOT227B Electrical mounting: screw Technology: X2PT Mechanical mounting: screw Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MIXA10W1200TML | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 12A Case: E1-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 65W Gate-emitter voltage: ±20V Pulsed collector current: 30A Application: fans; for pump; motors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MIXA60W1200TED | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 60A Case: E2-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 290W Gate-emitter voltage: ±20V Pulsed collector current: 150A Application: motors; photovoltaics |
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MIXG70W1200TED | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 79A Case: E2-Pack Electrical mounting: Press-in PCB Technology: X2PT Mechanical mounting: screw |
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MIXA30W1200TED | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 30A Case: E2-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 150W Gate-emitter voltage: ±20V Pulsed collector current: 75A Application: motors; photovoltaics |
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MIXA30W1200TML | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 30A Case: E1-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 150W Gate-emitter voltage: ±20V Pulsed collector current: 75A Application: fans; for pump; motors |
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MIXA40W1200TED | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 40A Case: E2-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 195W Gate-emitter voltage: ±20V Pulsed collector current: 105A Application: motors; photovoltaics |
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MIXA41W1200ED | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge Max. off-state voltage: 1.2kV Collector current: 40A Case: E2-Pack Electrical mounting: Press-in PCB Technology: XPT™ Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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MIXA80R1200VA | IXYS |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 390W Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 84A Case: V1-A-Pack Electrical mounting: FASTON connectors Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 390W Gate-emitter voltage: ±20V Pulsed collector current: 225A Application: fans; for pump; motors; photovoltaics |
Produkt ist nicht verfügbar |
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MIXA80W1200PTEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 84A Case: E3-Pack Electrical mounting: Press-in PCB Technology: XPT™ Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MIXA80W1200TED | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 84A Case: E2-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 390W Gate-emitter voltage: ±20V Pulsed collector current: 225A Application: motors; photovoltaics |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MIXA81H1200EH | IXYS |
![]() Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Collector current: 84A Case: E3-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 390W Gate-emitter voltage: ±20V Pulsed collector current: 225A Application: motors; photovoltaics |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MIXA20W1200TML | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 20A Case: E1-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 100W Gate-emitter voltage: ±20V Pulsed collector current: 45A Application: fans; for pump; motors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MIXA40W1200TML | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 40A Case: E1-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 195W Gate-emitter voltage: ±20V Pulsed collector current: 105A Application: fans; for pump; motors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MIXA80W1200TEH | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 84A Case: E3-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 390W Gate-emitter voltage: ±20V Pulsed collector current: 225A Application: motors; photovoltaics |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IXTH16P60P |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 440ns
On-state resistance: 720mΩ
Type of transistor: P-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -600V
Drain current: -16A
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 440ns
On-state resistance: 720mΩ
Type of transistor: P-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -600V
Drain current: -16A
Produkt ist nicht verfügbar
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FDA217 |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
Type of integrated circuit: driver
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: MOSFET gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
Type of integrated circuit: driver
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: MOSFET gate driver
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.94 EUR |
22+ | 3.36 EUR |
23+ | 3.17 EUR |
IXKH47N60C |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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DSA120X200LB-TRR |
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W
Load current: 65A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
Power dissipation: 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. off-state voltage: 200V
Max. forward voltage: 0.67V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W
Load current: 65A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
Power dissipation: 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. off-state voltage: 200V
Max. forward voltage: 0.67V
Produkt ist nicht verfügbar
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CPC1966YX8 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Turn-on time: 20µs
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Turn-on time: 20µs
Produkt ist nicht verfügbar
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IXTP3N50D2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Power dissipation: 125W
Gate charge: 1.07µC
Reverse recovery time: 24ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Power dissipation: 125W
Gate charge: 1.07µC
Reverse recovery time: 24ns
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.35 EUR |
20+ | 3.65 EUR |
21+ | 3.45 EUR |
250+ | 3.30 EUR |
IXTY3N50P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 70W
Gate charge: 9.3nC
Technology: Polar™
Reverse recovery time: 400ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 70W
Gate charge: 9.3nC
Technology: Polar™
Reverse recovery time: 400ns
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
104+ | 0.69 EUR |
IXTA3N50P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 70W
Gate charge: 9.3nC
Technology: Polar™
Reverse recovery time: 400ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 70W
Gate charge: 9.3nC
Technology: Polar™
Reverse recovery time: 400ns
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.15 EUR |
IXTA3N50D2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO263
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Power dissipation: 125W
Gate charge: 1.07µC
Reverse recovery time: 24ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO263
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Power dissipation: 125W
Gate charge: 1.07µC
Reverse recovery time: 24ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXDF602PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 1053 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.29 EUR |
52+ | 1.40 EUR |
68+ | 1.06 EUR |
72+ | 1.00 EUR |
100+ | 0.97 EUR |
IXDI602PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 979 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.73 EUR |
43+ | 1.67 EUR |
70+ | 1.03 EUR |
74+ | 0.97 EUR |
500+ | 0.93 EUR |
IXTN32P60P |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Case: SOT227B
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: -96A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Power dissipation: 890W
Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Case: SOT227B
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: -96A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Power dissipation: 890W
Produkt ist nicht verfügbar
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Stück im Wert von UAH
PLA172P |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Mounting: SMT
Operating temperature: -40...105°C
Kind of output: MOSFET
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 800V AC; max. 800V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 50Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.59mm
Insulation voltage: 5kV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Mounting: SMT
Operating temperature: -40...105°C
Kind of output: MOSFET
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 800V AC; max. 800V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 50Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.59mm
Insulation voltage: 5kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PLA172PTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Mounting: SMT
Operating temperature: -40...105°C
Kind of output: MOSFET
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 800V AC; max. 800V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 50Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.59mm
Insulation voltage: 5kV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Mounting: SMT
Operating temperature: -40...105°C
Kind of output: MOSFET
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 800V AC; max. 800V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 50Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.59mm
Insulation voltage: 5kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFR40N90P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 230nC
Kind of channel: enhancement
Drain-source voltage: 900V
Drain current: 21A
On-state resistance: 0.25Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 230nC
Kind of channel: enhancement
Drain-source voltage: 900V
Drain current: 21A
On-state resistance: 0.25Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MIXA225PF1200TSF |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Application: fans; for pump; for UPS; motors
Power dissipation: 1.1kW
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Application: fans; for pump; for UPS; motors
Power dissipation: 1.1kW
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
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MIXA225RF1200TSF |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: boost chopper; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: boost chopper; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
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MDNA425P2200PTSF |
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 2.2kV
Load current: 425A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 2.2kV
Load current: 425A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
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MDNA600P2200PTSF |
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Max. off-state voltage: 2.2kV
Load current: 600A
Semiconductor structure: double series
Max. forward impulse current: 15kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Max. off-state voltage: 2.2kV
Load current: 600A
Semiconductor structure: double series
Max. forward impulse current: 15kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
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MDNA300P2200PTSF |
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Max. off-state voltage: 2.2kV
Load current: 300A
Semiconductor structure: double series
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Max. off-state voltage: 2.2kV
Load current: 300A
Semiconductor structure: double series
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
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MIXA300PF1200TSF |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 325A
Pulsed collector current: 650A
Application: fans; for pump; for UPS; motors
Power dissipation: 1.5kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 325A
Pulsed collector current: 650A
Application: fans; for pump; for UPS; motors
Power dissipation: 1.5kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
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MIXG490PF1200TSF |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
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MIXA450PF1200TSF |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Application: fans; for pump; for UPS; motors
Power dissipation: 2.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Application: fans; for pump; for UPS; motors
Power dissipation: 2.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
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MIXG490PF1200PTSF |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
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IX9907NTR |
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Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
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DSEE30-12A |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Semiconductor structure: double series
Reverse recovery time: 30ns
Max. forward impulse current: 200A
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.5V
Load current: 30A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Semiconductor structure: double series
Reverse recovery time: 30ns
Max. forward impulse current: 200A
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.5V
Load current: 30A
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 20.02 EUR |
10+ | 19.25 EUR |
FUE30-12N1 |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 90A; THT
Max. forward impulse current: 90A
Electrical mounting: THT
Type of bridge rectifier: three-phase
Case: ISOPLUS i4-pac™ x024a
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.37V
Load current: 30A
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 90A; THT
Max. forward impulse current: 90A
Electrical mounting: THT
Type of bridge rectifier: three-phase
Case: ISOPLUS i4-pac™ x024a
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.37V
Load current: 30A
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IXGX100N170 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 285ns
Turn-off time: 720ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 285ns
Turn-off time: 720ns
Features of semiconductor devices: high voltage
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LDA102STR |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 50mA
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 50mA
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 1
auf Bestellung 798 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
81+ | 0.89 EUR |
97+ | 0.74 EUR |
125+ | 0.57 EUR |
160+ | 0.45 EUR |
169+ | 0.42 EUR |
500+ | 0.41 EUR |
VMM300-03F |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 300V; 220A; Y3-DCB; Idm: 1.16kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 300V
Drain current: 220A
Case: Y3-DCB
Topology: MOSFET half-bridge
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 1.16kA
Power dissipation: 1.5kW
Technology: HiPerFET™
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 300V; 220A; Y3-DCB; Idm: 1.16kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 300V
Drain current: 220A
Case: Y3-DCB
Topology: MOSFET half-bridge
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 1.16kA
Power dissipation: 1.5kW
Technology: HiPerFET™
Gate-source voltage: ±20V
Mechanical mounting: screw
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IXXH80N65B4 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
Turn-on time: 125ns
Turn-off time: 222ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 0.12µC
Technology: GenX4™; Trench; XPT™
Mounting: THT
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
Turn-on time: 125ns
Turn-off time: 222ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 0.12µC
Technology: GenX4™; Trench; XPT™
Mounting: THT
Case: TO247-3
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.98 EUR |
12+ | 6.03 EUR |
IXGK100N170 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 600A
Turn-on time: 285ns
Turn-off time: 720ns
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 425nC
Technology: NPT
Case: TO264
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 600A
Turn-on time: 285ns
Turn-off time: 720ns
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 425nC
Technology: NPT
Case: TO264
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IXA12IF1200HB |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Collector current: 13A
Case: TO247-3
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Collector current: 13A
Case: TO247-3
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.08 EUR |
20+ | 3.66 EUR |
21+ | 3.46 EUR |
IXA37IF1200HJ |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Collector current: 37A
Case: PLUS247™
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 195W
Kind of package: tube
Gate charge: 106nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Collector current: 37A
Case: PLUS247™
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 195W
Kind of package: tube
Gate charge: 106nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 20.28 EUR |
IXA4I1200UC-TRL |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252
Collector current: 9A
Case: TO252
Technology: XPT™
Power dissipation: 45W
Gate charge: 12nC
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Turn-on time: 70ns
Turn-off time: 250ns
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252
Collector current: 9A
Case: TO252
Technology: XPT™
Power dissipation: 45W
Gate charge: 12nC
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Turn-on time: 70ns
Turn-off time: 250ns
Type of transistor: IGBT
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IXA12IF1200PB |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO220-3
Collector current: 13A
Case: TO220-3
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO220-3
Collector current: 13A
Case: TO220-3
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
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ITF48IF1200HR |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™
Collector current: 48A
Case: ISO247™
Technology: Trench; XPT™
Power dissipation: 390W
Kind of package: tube
Gate charge: 175nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 460ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™
Collector current: 48A
Case: ISO247™
Technology: Trench; XPT™
Power dissipation: 390W
Kind of package: tube
Gate charge: 175nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 460ns
Type of transistor: IGBT
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IXA27IF1200HJ |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 27A; 150W; PLUS247™
Collector current: 27A
Case: PLUS247™
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 150W
Kind of package: tube
Gate charge: 76nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 27A; 150W; PLUS247™
Collector current: 27A
Case: PLUS247™
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 150W
Kind of package: tube
Gate charge: 76nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
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IXA20IF1200HB |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO247-3
Collector current: 22A
Case: TO247-3
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO247-3
Collector current: 22A
Case: TO247-3
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
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IXA20I1200PB |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Collector current: 22A
Case: TO220-3
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Collector current: 22A
Case: TO220-3
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
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IXA17IF1200HJ |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 18A; 100W; PLUS247™
Collector current: 18A
Case: PLUS247™
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 100W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 18A; 100W; PLUS247™
Collector current: 18A
Case: PLUS247™
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 100W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
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IXA45IF1200HB |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 45A; 325W; TO247-3
Collector current: 45A
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Power dissipation: 325W
Kind of package: tube
Gate charge: 106nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 45A; 325W; TO247-3
Collector current: 45A
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Power dissipation: 325W
Kind of package: tube
Gate charge: 106nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
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IXA4IF1200TC |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 5A; 45W; TO268
Collector current: 5A
Case: TO268
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 45W
Kind of package: tube
Gate charge: 12nC
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 5A; 45W; TO268
Collector current: 5A
Case: TO268
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 45W
Kind of package: tube
Gate charge: 12nC
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
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IXA55I1200HJ |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 54A; 290W; PLUS247™
Collector current: 54A
Case: PLUS247™
Technology: GenX3™; Planar; XPT™
Power dissipation: 290W
Kind of package: tube
Gate charge: 0.19µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 54A; 290W; PLUS247™
Collector current: 54A
Case: PLUS247™
Technology: GenX3™; Planar; XPT™
Power dissipation: 290W
Kind of package: tube
Gate charge: 0.19µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
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MIXA61H1200ED |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 290W
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Application: motors; photovoltaics
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 290W
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Application: motors; photovoltaics
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IXG70IF1200NA |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 86A
Case: SOT227B
Electrical mounting: screw
Technology: X2PT
Mechanical mounting: screw
Features of semiconductor devices: integrated anti-parallel diode
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 86A
Case: SOT227B
Electrical mounting: screw
Technology: X2PT
Mechanical mounting: screw
Features of semiconductor devices: integrated anti-parallel diode
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MIXA10W1200TML |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 12A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 65W
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Application: fans; for pump; motors
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 12A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 65W
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Application: fans; for pump; motors
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MIXA60W1200TED |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 290W
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Application: motors; photovoltaics
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 290W
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Application: motors; photovoltaics
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MIXG70W1200TED |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 79A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 79A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
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MIXA30W1200TED |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 150W
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Application: motors; photovoltaics
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 150W
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Application: motors; photovoltaics
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MIXA30W1200TML |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 150W
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Application: fans; for pump; motors
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 150W
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Application: fans; for pump; motors
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MIXA40W1200TED |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 195W
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Application: motors; photovoltaics
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 195W
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Application: motors; photovoltaics
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MIXA41W1200ED |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
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MIXA80R1200VA |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 390W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: V1-A-Pack
Electrical mounting: FASTON connectors
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: fans; for pump; motors; photovoltaics
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 390W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: V1-A-Pack
Electrical mounting: FASTON connectors
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: fans; for pump; motors; photovoltaics
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MIXA80W1200PTEH |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
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MIXA80W1200TED |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
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MIXA81H1200EH |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
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MIXA20W1200TML |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 20A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 100W
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Application: fans; for pump; motors
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 20A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 100W
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Application: fans; for pump; motors
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MIXA40W1200TML |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 195W
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Application: fans; for pump; motors
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 195W
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Application: fans; for pump; motors
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MIXA80W1200TEH |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
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