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IXTR20P50P IXTR20P50P IXYS IXTR20P50P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -13A; 190W; 406ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 103nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 406ns
Drain-source voltage: -500V
Drain current: -13A
On-state resistance: 0.49Ω
Type of transistor: P-MOSFET
Power dissipation: 190W
auf Bestellung 32 Stücke:
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5+16.03 EUR
6+12.18 EUR
30+11.98 EUR
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DSDI60-18A DSDI60-18A IXYS DSDI60.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 60A; tube; Ifsm: 450A; TO247-2; 416W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Max. forward voltage: 2.6V
Power dissipation: 416W
Reverse recovery time: 40ns
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DSDI60-16A DSDI60-16A IXYS DSDI60.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 60A; tube; Ifsm: 450A; TO247-2; 416W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Max. forward voltage: 2.6V
Power dissipation: 416W
Reverse recovery time: 40ns
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6+12.08 EUR
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LAA125P LAA125P IXYS LAA125.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Control current max.: 50mA
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LCA125L LCA125L IXYS LCA125L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Control current max.: 50mA
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LAA125PL LAA125PL IXYS LAA125L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Control current max.: 50mA
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LAA125L LAA125L IXYS LAA125L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Control current max.: 50mA
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LAA125S LAA125S IXYS LAA125.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Control current max.: 50mA
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LAA125LS LAA125LS IXYS LAA125L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Control current max.: 50mA
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PLA190S PLA190S IXYS PLA190.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 0.5ms
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PLA191S PLA191S IXYS PLA191.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
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PLA193S PLA193S IXYS PLA193.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
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PAA190S PAA190S IXYS PAA190.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
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IXTA100N04T2 IXTA100N04T2 IXYS IXTA(P)100N04T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Mounting: SMD
Features of semiconductor devices: thrench gate power mosfet
Kind of channel: enhancement
Case: TO263
Reverse recovery time: 34ns
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
Produkt ist nicht verfügbar
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IXTN46N50L IXTN46N50L IXYS IXTN46N50L.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 260nC
Kind of channel: enhancement
Gate-source voltage: ±40V
Pulsed drain current: 100A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 0.6µs
Drain-source voltage: 500V
Drain current: 46A
On-state resistance: 0.16Ω
Power dissipation: 700W
Polarisation: unipolar
Produkt ist nicht verfügbar
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MDMA660U1600PTEH IXYS media?resourcetype=datasheets&itemid=6121d227-b8cc-43e1-b8e1-5fab292cc1a4&filename=littelfuse%2520power%2520semiconductors%2520mdma660u1600pteh%2520datasheet.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Case: E3-Pack
Electrical mounting: Press-Fit
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 660A
Max. forward impulse current: 5kA
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UGD8124AG IXYS UGB_UGD.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 10.5kV; If: 1.2A; Ifsm: 50A; THT
Case: UGD3
Leads: round pin
Max. off-state voltage: 10.5kV
Load current: 1.2A
Max. forward impulse current: 50A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Features of semiconductor devices: high voltage
Type of bridge rectifier: three-phase
Produkt ist nicht verfügbar
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IXFT400N075T2 IXFT400N075T2 IXYS IXFH(T)400N075T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 400A
Power dissipation: 1kW
Case: TO268
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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DLA100B800LB-TUB IXYS DLA100B800LB.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Case: SMPD-B
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.44V
Load current: 124A
Max. forward impulse current: 0.4kA
Kind of package: tube
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
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MDMA60B800MB IXYS Category: Diode modules
Description: Module: diode; 800V; 60A; ECO-PAC 1; THT; screw
Case: ECO-PAC 1
Max. off-state voltage: 0.8kV
Load current: 60A
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
Produkt ist nicht verfügbar
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DMA120B800LB-TUB IXYS Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; tube
Case: SMPD-B
Max. off-state voltage: 0.8kV
Load current: 130A
Kind of package: tube
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
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DLA100B800LB-TRR IXYS DLA100B800LB.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Case: SMPD-B
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.44V
Load current: 124A
Max. forward impulse current: 0.4kA
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
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DMA120B800LB-TRR IXYS Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; reel,tape
Case: SMPD-B
Max. off-state voltage: 0.8kV
Load current: 130A
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
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DSEI30-10A DSEI30-10A IXYS DSEI30-10A.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V
Max. off-state voltage: 1kV
Load current: 30A
Max. forward impulse current: 185A
Case: TO247-2
Kind of package: tube
Features of semiconductor devices: fast switching
Max. forward voltage: 2V
Semiconductor structure: single diode
Reverse recovery time: 35ns
Power dissipation: 138W
Type of diode: rectifying
Technology: FRED
Mounting: THT
auf Bestellung 282 Stücke:
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13+5.88 EUR
14+5.29 EUR
17+4.22 EUR
18+3.98 EUR
120+3.92 EUR
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VBO50-18NO7 IXYS VBO50-18NO7.pdf Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 45A; Ifsm: 720A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.8kV
Load current: 45A
Max. forward impulse current: 720A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M5 screws
Case: PWS-B
Produkt ist nicht verfügbar
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IXTY1R6N50D2 IXTY1R6N50D2 IXYS IXTA(P,Y)1R6N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 23.7nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 400ns
auf Bestellung 348 Stücke:
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17+4.40 EUR
25+2.86 EUR
27+2.70 EUR
50+2.62 EUR
70+2.60 EUR
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DPG60IM400QB DPG60IM400QB IXYS Littelfuse-Power-Semiconductors-DPG60IM400QB-Datasheet?assetguid=9CDFE8CC-C0D4-4751-A0DF-C56666566D3F Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; tube; Ifsm: 450A; TO3P; 275W; 45ns
Mounting: THT
Max. forward impulse current: 0.45kA
Power dissipation: 275W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO3P
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.47V
Load current: 60A
Semiconductor structure: single diode
Reverse recovery time: 45ns
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DPG60C300HB DPG60C300HB IXYS DPG60C300HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.39V
Max. forward impulse current: 360A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 160W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
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14+5.18 EUR
15+4.89 EUR
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DPG60I300HA DPG60I300HA IXYS Littelfuse-Power-Semiconductors-DPG60I300HA-Datasheet?assetguid=30BA12F4-5BAA-4922-A8DE-ED472EC55463 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 60A; tube; Ifsm: 550A; TO247-2; 275W
Mounting: THT
Max. forward impulse current: 0.55kA
Power dissipation: 275W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-2
Max. off-state voltage: 300V
Max. forward voltage: 1.4V
Load current: 60A
Semiconductor structure: single diode
Reverse recovery time: 35ns
auf Bestellung 42 Stücke:
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10+7.19 EUR
12+6.46 EUR
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DPG60I400HA DPG60I400HA IXYS DPG60I400HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; tube; Ifsm: 450A; TO247-2; 275W
Mounting: THT
Max. forward impulse current: 0.45kA
Power dissipation: 275W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.22V
Load current: 60A
Semiconductor structure: single diode
Reverse recovery time: 45ns
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10+7.18 EUR
13+5.62 EUR
14+5.32 EUR
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DPG60C200QB DPG60C200QB IXYS Littelfuse-Power-Semiconductors-DPG60C200QB-Datasheet?assetguid=1B2C1EA9-F199-4CC1-83AF-AEB704688BF1 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO3P
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 160W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 59 Stücke:
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12+6.11 EUR
22+3.35 EUR
23+3.17 EUR
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DPG60C200HB DPG60C200HB IXYS Littelfuse-Power-Semiconductors-DPG60C200HB-Datasheet?assetguid=87B6D095-C8C9-4D2A-9030-B3214D70FAF8 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 160W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
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10+7.28 EUR
11+6.55 EUR
14+5.22 EUR
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DPG60C300QB DPG60C300QB IXYS Littelfuse-Power-Semiconductors-DPG60C300QB-Datasheet?assetguid=38393FCB-5AF1-4A3C-B2C9-F6797A3D1C35 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO3P
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 160W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 36 Stücke:
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10+7.69 EUR
15+5.03 EUR
16+4.76 EUR
30+4.58 EUR
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DPG60C300HJ DPG60C300HJ IXYS Littelfuse-Power-Semiconductors-DPG60C300HJ-Datasheet?assetguid=75018E55-B8E7-4BF6-ACE8-4E6EDD4B5031 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 450A; ISOPLUS247™
Mounting: THT
Max. forward impulse current: 0.45kA
Power dissipation: 145W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS247™
Max. off-state voltage: 300V
Max. forward voltage: 1.26V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
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DPG60B600LB-TRR IXYS DPG60B600LB.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Max. forward impulse current: 250A
Kind of package: reel; tape
Electrical mounting: SMT
Technology: HiPerFRED™
Case: SMPD-B
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.21V
Load current: 60A
Produkt ist nicht verfügbar
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DPG60B600LB-TUB IXYS DPG60B600LB.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Max. forward impulse current: 250A
Kind of package: tube
Electrical mounting: SMT
Technology: HiPerFRED™
Case: SMPD-B
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.21V
Load current: 60A
Produkt ist nicht verfügbar
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DPG60C300PC-TRL IXYS DPG60C300PC.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 30Ax2; 35ns; TO263AB; Ufmax: 1.66V
Mounting: SMD
Max. forward impulse current: 360A
Power dissipation: 175W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Case: TO263AB
Max. off-state voltage: 300V
Max. forward voltage: 1.66V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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LCA120L LCA120L IXYS LCA120L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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LCA120LS LCA120LS IXYS LCA120L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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LCA120LSTR IXYS LCA120L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXFX180N15P IXFX180N15P IXYS IXFX180N15P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 4 Stücke:
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IXFX220N17T2 IXFX220N17T2 IXYS IXFK(X)220N17T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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5+16.03 EUR
6+12.61 EUR
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IXFX40N90P IXFX40N90P IXYS IXFK(X)40N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 40A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX64N60P3 IXFX64N60P3 IXYS IXF_64N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX32N100P IXFX32N100P IXYS IXFK(X)32N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX80N50Q3 IXFX80N50Q3 IXYS IXFK(X)80N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX140N30P IXFX140N30P IXYS IXFK140N30P_IXFX140N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 140A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX160N30T IXFX160N30T IXYS IXF_160N30T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160A; 1390W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: PLUS247™
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFX520N075T2 IXFX520N075T2 IXYS IXFK(X)520N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFX64N50P IXFX64N50P IXYS IXFK(X)64N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX100N65X2 IXFX100N65X2 IXYS IXFK(X)100N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
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IXFX180N25T IXFX180N25T IXYS IXFK(X)180N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 180A
Power dissipation: 1390W
Case: PLUS247™
On-state resistance: 12.9mΩ
Mounting: THT
Gate charge: 364nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFX210N30X3 IXFX210N30X3 IXYS IXF_210N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 190ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXFX94N50P2 IXFX94N50P2 IXYS IXFx94N50P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar2™
Produkt ist nicht verfügbar
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IXFX120N25P IXFX120N25P IXYS IXFK(X)120N25P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX140N25T IXFX140N25T IXYS IXFK(X)140N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 140A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFX170N20T IXFX170N20T IXYS IXFK(X)170N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.15kW
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFX200N10P IXFX200N10P IXYS IXFK(X)200N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX240N25X3 IXFX240N25X3 IXYS IXFK(X)240N25X3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; PLUS247™; 177ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 345nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 177ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXFX26N100P IXFX26N100P IXYS IXFK26N100P_IXFX26N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTR20P50P IXTR20P50P.pdf
IXTR20P50P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -13A; 190W; 406ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 103nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 406ns
Drain-source voltage: -500V
Drain current: -13A
On-state resistance: 0.49Ω
Type of transistor: P-MOSFET
Power dissipation: 190W
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.03 EUR
6+12.18 EUR
30+11.98 EUR
Mindestbestellmenge: 5
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DSDI60-18A DSDI60.pdf
DSDI60-18A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 60A; tube; Ifsm: 450A; TO247-2; 416W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Max. forward voltage: 2.6V
Power dissipation: 416W
Reverse recovery time: 40ns
auf Bestellung 269 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.13 EUR
7+10.65 EUR
30+10.24 EUR
Mindestbestellmenge: 6
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DSDI60-16A DSDI60.pdf
DSDI60-16A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 60A; tube; Ifsm: 450A; TO247-2; 416W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Max. forward voltage: 2.6V
Power dissipation: 416W
Reverse recovery time: 40ns
auf Bestellung 236 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+17.79 EUR
6+12.08 EUR
120+11.88 EUR
Mindestbestellmenge: 5
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LAA125P LAA125.pdf
LAA125P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Control current max.: 50mA
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.35 EUR
18+4.09 EUR
19+3.88 EUR
Mindestbestellmenge: 14
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LCA125L LCA125L.pdf
LCA125L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Control current max.: 50mA
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.86 EUR
22+3.29 EUR
24+3.10 EUR
Mindestbestellmenge: 11
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LAA125PL LAA125L.pdf
LAA125PL
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Control current max.: 50mA
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.30 EUR
17+4.45 EUR
18+4.20 EUR
Mindestbestellmenge: 8
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LAA125L LAA125L.pdf
LAA125L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Control current max.: 50mA
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.52 EUR
17+4.45 EUR
18+4.20 EUR
Mindestbestellmenge: 11
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LAA125S LAA125.pdf
LAA125S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Control current max.: 50mA
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.12 EUR
17+4.29 EUR
18+4.06 EUR
Mindestbestellmenge: 12
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LAA125LS LAA125L.pdf
LAA125LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Control current max.: 50mA
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.76 EUR
17+4.45 EUR
18+4.20 EUR
Mindestbestellmenge: 11
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PLA190S PLA190.pdf
PLA190S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 0.5ms
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.81 EUR
19+3.82 EUR
20+3.60 EUR
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PLA191S PLA191.pdf
PLA191S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
auf Bestellung 199 Stücke:
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Anzahl Preis
11+6.51 EUR
17+4.36 EUR
18+4.12 EUR
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PLA193S PLA193.pdf
PLA193S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.35 EUR
25+2.87 EUR
27+2.72 EUR
Mindestbestellmenge: 17
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PAA190S PAA190.pdf
PAA190S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.04 EUR
12+6.25 EUR
13+5.91 EUR
Mindestbestellmenge: 6
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IXTA100N04T2 IXTA(P)100N04T2.pdf
IXTA100N04T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Mounting: SMD
Features of semiconductor devices: thrench gate power mosfet
Kind of channel: enhancement
Case: TO263
Reverse recovery time: 34ns
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
Produkt ist nicht verfügbar
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IXTN46N50L IXTN46N50L.pdf
IXTN46N50L
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 260nC
Kind of channel: enhancement
Gate-source voltage: ±40V
Pulsed drain current: 100A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 0.6µs
Drain-source voltage: 500V
Drain current: 46A
On-state resistance: 0.16Ω
Power dissipation: 700W
Polarisation: unipolar
Produkt ist nicht verfügbar
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MDMA660U1600PTEH media?resourcetype=datasheets&itemid=6121d227-b8cc-43e1-b8e1-5fab292cc1a4&filename=littelfuse%2520power%2520semiconductors%2520mdma660u1600pteh%2520datasheet.pdf
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Case: E3-Pack
Electrical mounting: Press-Fit
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 660A
Max. forward impulse current: 5kA
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+195.20 EUR
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UGD8124AG UGB_UGD.pdf
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 10.5kV; If: 1.2A; Ifsm: 50A; THT
Case: UGD3
Leads: round pin
Max. off-state voltage: 10.5kV
Load current: 1.2A
Max. forward impulse current: 50A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Features of semiconductor devices: high voltage
Type of bridge rectifier: three-phase
Produkt ist nicht verfügbar
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IXFT400N075T2 IXFH(T)400N075T2.pdf
IXFT400N075T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 400A
Power dissipation: 1kW
Case: TO268
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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DLA100B800LB-TUB DLA100B800LB.pdf
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Case: SMPD-B
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.44V
Load current: 124A
Max. forward impulse current: 0.4kA
Kind of package: tube
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
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MDMA60B800MB
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; 800V; 60A; ECO-PAC 1; THT; screw
Case: ECO-PAC 1
Max. off-state voltage: 0.8kV
Load current: 60A
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
Produkt ist nicht verfügbar
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DMA120B800LB-TUB
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; tube
Case: SMPD-B
Max. off-state voltage: 0.8kV
Load current: 130A
Kind of package: tube
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
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DLA100B800LB-TRR DLA100B800LB.pdf
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Case: SMPD-B
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.44V
Load current: 124A
Max. forward impulse current: 0.4kA
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
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DMA120B800LB-TRR
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; reel,tape
Case: SMPD-B
Max. off-state voltage: 0.8kV
Load current: 130A
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
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DSEI30-10A description DSEI30-10A.pdf
DSEI30-10A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V
Max. off-state voltage: 1kV
Load current: 30A
Max. forward impulse current: 185A
Case: TO247-2
Kind of package: tube
Features of semiconductor devices: fast switching
Max. forward voltage: 2V
Semiconductor structure: single diode
Reverse recovery time: 35ns
Power dissipation: 138W
Type of diode: rectifying
Technology: FRED
Mounting: THT
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.88 EUR
14+5.29 EUR
17+4.22 EUR
18+3.98 EUR
120+3.92 EUR
Mindestbestellmenge: 13
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VBO50-18NO7 VBO50-18NO7.pdf
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 45A; Ifsm: 720A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.8kV
Load current: 45A
Max. forward impulse current: 720A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M5 screws
Case: PWS-B
Produkt ist nicht verfügbar
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IXTY1R6N50D2 IXTA(P,Y)1R6N50D2.pdf
IXTY1R6N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 23.7nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 400ns
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.40 EUR
25+2.86 EUR
27+2.70 EUR
50+2.62 EUR
70+2.60 EUR
Mindestbestellmenge: 17
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DPG60IM400QB Littelfuse-Power-Semiconductors-DPG60IM400QB-Datasheet?assetguid=9CDFE8CC-C0D4-4751-A0DF-C56666566D3F
DPG60IM400QB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; tube; Ifsm: 450A; TO3P; 275W; 45ns
Mounting: THT
Max. forward impulse current: 0.45kA
Power dissipation: 275W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO3P
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.47V
Load current: 60A
Semiconductor structure: single diode
Reverse recovery time: 45ns
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
Mindestbestellmenge: 11
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DPG60C300HB DPG60C300HB.pdf
DPG60C300HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.39V
Max. forward impulse current: 360A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 160W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.49 EUR
13+5.75 EUR
14+5.18 EUR
15+4.89 EUR
Mindestbestellmenge: 12
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DPG60I300HA Littelfuse-Power-Semiconductors-DPG60I300HA-Datasheet?assetguid=30BA12F4-5BAA-4922-A8DE-ED472EC55463
DPG60I300HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 60A; tube; Ifsm: 550A; TO247-2; 275W
Mounting: THT
Max. forward impulse current: 0.55kA
Power dissipation: 275W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-2
Max. off-state voltage: 300V
Max. forward voltage: 1.4V
Load current: 60A
Semiconductor structure: single diode
Reverse recovery time: 35ns
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.19 EUR
12+6.46 EUR
14+5.16 EUR
15+4.88 EUR
Mindestbestellmenge: 10
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DPG60I400HA DPG60I400HA.pdf
DPG60I400HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; tube; Ifsm: 450A; TO247-2; 275W
Mounting: THT
Max. forward impulse current: 0.45kA
Power dissipation: 275W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.22V
Load current: 60A
Semiconductor structure: single diode
Reverse recovery time: 45ns
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.18 EUR
13+5.62 EUR
14+5.32 EUR
Mindestbestellmenge: 10
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DPG60C200QB Littelfuse-Power-Semiconductors-DPG60C200QB-Datasheet?assetguid=1B2C1EA9-F199-4CC1-83AF-AEB704688BF1
DPG60C200QB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO3P
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 160W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.11 EUR
22+3.35 EUR
23+3.17 EUR
Mindestbestellmenge: 12
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DPG60C200HB Littelfuse-Power-Semiconductors-DPG60C200HB-Datasheet?assetguid=87B6D095-C8C9-4D2A-9030-B3214D70FAF8
DPG60C200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 160W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.28 EUR
11+6.55 EUR
14+5.22 EUR
15+4.93 EUR
Mindestbestellmenge: 10
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DPG60C300QB Littelfuse-Power-Semiconductors-DPG60C300QB-Datasheet?assetguid=38393FCB-5AF1-4A3C-B2C9-F6797A3D1C35
DPG60C300QB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO3P
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 160W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.69 EUR
15+5.03 EUR
16+4.76 EUR
30+4.58 EUR
Mindestbestellmenge: 10
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DPG60C300HJ Littelfuse-Power-Semiconductors-DPG60C300HJ-Datasheet?assetguid=75018E55-B8E7-4BF6-ACE8-4E6EDD4B5031
DPG60C300HJ
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 450A; ISOPLUS247™
Mounting: THT
Max. forward impulse current: 0.45kA
Power dissipation: 145W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS247™
Max. off-state voltage: 300V
Max. forward voltage: 1.26V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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DPG60B600LB-TRR DPG60B600LB.pdf
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Max. forward impulse current: 250A
Kind of package: reel; tape
Electrical mounting: SMT
Technology: HiPerFRED™
Case: SMPD-B
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.21V
Load current: 60A
Produkt ist nicht verfügbar
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DPG60B600LB-TUB DPG60B600LB.pdf
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Max. forward impulse current: 250A
Kind of package: tube
Electrical mounting: SMT
Technology: HiPerFRED™
Case: SMPD-B
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.21V
Load current: 60A
Produkt ist nicht verfügbar
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DPG60C300PC-TRL DPG60C300PC.pdf
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 30Ax2; 35ns; TO263AB; Ufmax: 1.66V
Mounting: SMD
Max. forward impulse current: 360A
Power dissipation: 175W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Case: TO263AB
Max. off-state voltage: 300V
Max. forward voltage: 1.66V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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LCA120L LCA120L.pdf
LCA120L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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LCA120LS LCA120L.pdf
LCA120LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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LCA120LSTR LCA120L.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXFX180N15P IXFX180N15P.pdf
IXFX180N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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IXFX220N17T2 IXFK(X)220N17T2.pdf
IXFX220N17T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.03 EUR
6+12.61 EUR
Mindestbestellmenge: 5
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IXFX40N90P IXFK(X)40N90P.pdf
IXFX40N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 40A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX64N60P3 IXF_64N60P3.pdf
IXFX64N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX32N100P IXFK(X)32N100P.pdf
IXFX32N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX80N50Q3 IXFK(X)80N50Q3.pdf
IXFX80N50Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX140N30P IXFK140N30P_IXFX140N30P.pdf
IXFX140N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 140A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX160N30T IXF_160N30T.pdf
IXFX160N30T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160A; 1390W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: PLUS247™
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFX520N075T2 IXFK(X)520N075T2.pdf
IXFX520N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFX64N50P IXFK(X)64N50P.pdf
IXFX64N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX100N65X2 IXFK(X)100N65X2.pdf
IXFX100N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
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IXFX180N25T IXFK(X)180N25T.pdf
IXFX180N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 180A
Power dissipation: 1390W
Case: PLUS247™
On-state resistance: 12.9mΩ
Mounting: THT
Gate charge: 364nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFX210N30X3 IXF_210N30X3.pdf 300VProductBrief.pdf
IXFX210N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 190ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXFX94N50P2 IXFx94N50P2.pdf
IXFX94N50P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar2™
Produkt ist nicht verfügbar
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IXFX120N25P IXFK(X)120N25P.pdf
IXFX120N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX140N25T IXFK(X)140N25T.pdf
IXFX140N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 140A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFX170N20T IXFK(X)170N20T.pdf
IXFX170N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.15kW
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFX200N10P IXFK(X)200N10P.pdf
IXFX200N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX240N25X3 IXFK(X)240N25X3.pdf
IXFX240N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; PLUS247™; 177ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 345nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 177ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXFX26N100P IXFK26N100P_IXFX26N100P.pdf
IXFX26N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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