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MKI75-06A7T IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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MKI75-06A7 IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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MWI75-06A7T IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: motors
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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CPC1979J CPC1979J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B380C7&compId=CPC1979.pdf?ci_sign=70957c329dbb70e06230b407c35c949224c15f38 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1.4A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.75Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 25ms
Turn-off time: 5ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1978J CPC1978J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B240C7&compId=CPC1978.pdf?ci_sign=d1b88806735edf2502f5c1b340ced74d4071ed79 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 750mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 750mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2.3Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXFH26N50P3 IXFH26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar3™
auf Bestellung 197 Stücke:
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8+8.95 EUR
11+6.55 EUR
30+6.38 EUR
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IXTQ50N25T IXTQ50N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4E4FF92DFD820&compId=IXTA(H%2CP%2CQ)50N25T.pdf?ci_sign=7e809dd509feff8e274b784c3f608f03c09bb7c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO3P
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
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IXBN42N170A IXBN42N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2D30CCAF5B820&compId=IXBN42N170A.pdf?ci_sign=30d9a9716fcdb2ce03625600d5208415acafc420 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 21A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Power dissipation: 313W
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
auf Bestellung 4 Stücke:
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2+43.5 EUR
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IXTY1N100P IXTY1N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDE7EBEDD57820&compId=IXTA(P%2CY)1N100P.pdf?ci_sign=2c0b34b7a016c9a1f63c9199566154da599472cc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO252; 750ns
Mounting: SMD
Case: TO252
Polarisation: unipolar
Reverse recovery time: 750ns
Drain current: 1A
On-state resistance: 15Ω
Kind of channel: enhancement
Power dissipation: 50W
Features of semiconductor devices: standard power mosfet
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
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IXTA1N100P IXTA1N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDE7EBEDD57820&compId=IXTA(P%2CY)1N100P.pdf?ci_sign=2c0b34b7a016c9a1f63c9199566154da599472cc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO263; 750ns
Mounting: SMD
Case: TO263
Polarisation: unipolar
Reverse recovery time: 750ns
Drain current: 1A
On-state resistance: 15Ω
Kind of channel: enhancement
Power dissipation: 50W
Features of semiconductor devices: standard power mosfet
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
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IXTP1N100P IXTP1N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDE7EBEDD57820&compId=IXTA(P%2CY)1N100P.pdf?ci_sign=2c0b34b7a016c9a1f63c9199566154da599472cc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO220AB; 750ns
Mounting: THT
Case: TO220AB
Polarisation: unipolar
Reverse recovery time: 750ns
Drain current: 1A
On-state resistance: 15Ω
Kind of channel: enhancement
Power dissipation: 50W
Features of semiconductor devices: standard power mosfet
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
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IXBOD2-13 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF3591A938A58BF&compId=IXBOD2.pdf?ci_sign=fa4582bc3af32ec6981a4c739433a1bd5214673d Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.3kV
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 1.3kV
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LOC117S LOC117S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AE1C908A661EC&compId=LOC117.pdf?ci_sign=eb89496b2c23cbdf379c820a03dd855718cad7ee Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Mounting: SMD
Insulation voltage: 3.75kV
Number of channels: 1
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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CS45-16IO1R CS45-16IO1R IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFB71DF8D21820&compId=CS45-16io1R.pdf?ci_sign=efdda7ec6c6e9a406aed03cc4f534b63b8ad9084 Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.64 EUR
Mindestbestellmenge: 11
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IXFH80N65X2-4 IXFH80N65X2-4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB5825B99978BF&compId=IXFH80N65X2-4.pdf?ci_sign=e1124f754bcfef97bf067a342d7350d292757c2c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.03 EUR
5+14.63 EUR
6+13.83 EUR
Mindestbestellmenge: 4
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IXFH80N65X2 IXFH80N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A86DDE557C98BF&compId=IXF_80N65X2.pdf?ci_sign=09568d814d0e64a14a486ffb7ff44f5c27bd7a3c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.31 EUR
6+13.53 EUR
10+13.01 EUR
Mindestbestellmenge: 5
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IXFK80N65X2 IXFK80N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A86DDE557C98BF&compId=IXF_80N65X2.pdf?ci_sign=09568d814d0e64a14a486ffb7ff44f5c27bd7a3c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO264P
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 5 Stücke:
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4+21.29 EUR
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IXFT80N65X2HV IXFT80N65X2HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB5DDDF247B8BF&compId=IXFT80N65X2HV.pdf?ci_sign=8483671aa3976023c370bf7e90b7e5ebca15d53c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
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IXTH80N65X2 IXTH80N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB1FA4137F58BF&compId=IXTH80N65X2.pdf?ci_sign=d8bfcad20b59804a9aa6f35033565e0055cc9678 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 465ns
Produkt ist nicht verfügbar
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LCA100S LCA100S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF00E0C7&compId=LCA100.pdf?ci_sign=b6a13f254b82ed80bf7e6532564a0f3bc7f7be17 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.85 EUR
26+2.79 EUR
28+2.65 EUR
Mindestbestellmenge: 13
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LAA100S LAA100S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.22 EUR
16+4.69 EUR
17+4.43 EUR
50+4.42 EUR
Mindestbestellmenge: 9
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LAA100 LAA100 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.13 EUR
16+4.69 EUR
17+4.43 EUR
250+4.33 EUR
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LAA100L LAA100L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892080C7&compId=LAA100L.pdf?ci_sign=133833099cee8dee4dfa302627eb4b749f2b8824 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
15+5 EUR
16+4.49 EUR
50+4.3 EUR
Mindestbestellmenge: 15
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LCA100 LCA100 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF00E0C7&compId=LCA100.pdf?ci_sign=b6a13f254b82ed80bf7e6532564a0f3bc7f7be17 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
On-state resistance: 25Ω
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.93 EUR
26+2.79 EUR
28+2.65 EUR
250+2.59 EUR
Mindestbestellmenge: 15
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LCA100L LCA100L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF0260C7&compId=LCA100L.pdf?ci_sign=2944af23bbc5cad7dadbd037e13bc9d41be0ab14 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.12 EUR
25+2.9 EUR
27+2.75 EUR
250+2.7 EUR
Mindestbestellmenge: 14
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LCA100LS LCA100LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF0260C7&compId=LCA100L.pdf?ci_sign=2944af23bbc5cad7dadbd037e13bc9d41be0ab14 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.73 EUR
25+2.9 EUR
27+2.75 EUR
100+2.66 EUR
Mindestbestellmenge: 20
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IXGP36N60A3 IXGP36N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AEA0378A51C3820&compId=IXGA(P%2CH)36N60A3.pdf?ci_sign=ba06c4deb17583973f6fa92da2d0c294ed9e4688 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 220W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 1µs
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IXBH24N170 IXBH24N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF2EB66970D820&compId=IXBH(t)24N170.pdf?ci_sign=2bee8c9822cc9e5187f0a7830b316f81bec56b83 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Gate-emitter voltage: ±20V
Collector current: 24A
Power dissipation: 250W
Pulsed collector current: 230A
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 190ns
Gate charge: 0.14µC
Turn-off time: 1285ns
auf Bestellung 1 Stücke:
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IXFR80N50Q3 IXFR80N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC611820&compId=IXFR80N50Q3.pdf?ci_sign=196a018cdeecf0092ac54030991190e895b55b65 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 50A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 72mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
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IXDD604PI IXDD604PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 148 Stücke:
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33+2.19 EUR
45+1.6 EUR
48+1.52 EUR
50+1.43 EUR
51+1.42 EUR
100+1.37 EUR
Mindestbestellmenge: 33
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IXDD604SITR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXFH16N60P3 IXFH16N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D52E81740A5820&compId=IXFA(H%2CP)16N60P3.pdf?ci_sign=5bf62970bec965613ad22cf903e4c096360d3162 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
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MMIX1T600N04T2
+1
 		MMIX1T600N04T2 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 40V
Pulsed drain current: 2kA
Drain current: 600A
Gate charge: 590nC
Reverse recovery time: 100ns
On-state resistance: 1.3mΩ
Power dissipation: 830W
Gate-source voltage: ±20V
Case: SMPD
Kind of channel: enhancement
Technology: GigaMOS™; TrenchT2™
Type of transistor: N-MOSFET
auf Bestellung 20 Stücke:
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2+36.69 EUR
20+35.74 EUR
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IXA37IF1200HJ IXA37IF1200HJ IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F187B680865820&compId=IXA37IF1200HJ.pdf?ci_sign=d85df4621c1de3de20b1ce19f7cad76b3d699e55 Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Kind of package: tube
Gate charge: 106nC
Turn-on time: 110ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 105A
Power dissipation: 195W
Collector-emitter voltage: 1.2kV
Technology: Planar; Sonic FRD™; XPT™
Case: PLUS247™
Mounting: THT
Type of transistor: IGBT
auf Bestellung 56 Stücke:
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IXTH1N300P3HV IXTH1N300P3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDC4D88D0E1820&compId=IXTH(T)1N300P3HV.pdf?ci_sign=1f4d245457177f7908df308b9e7972808bc21862 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 1.8µs
On-state resistance: 50Ω
Drain current: 1A
Drain-source voltage: 3kV
Power dissipation: 195W
Case: TO247HV
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
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IXTT1N300P3HV IXTT1N300P3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDC4D88D0E1820&compId=IXTH(T)1N300P3HV.pdf?ci_sign=1f4d245457177f7908df308b9e7972808bc21862 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO268HV; 1.8us
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 1.8µs
On-state resistance: 50Ω
Drain current: 1A
Drain-source voltage: 3kV
Power dissipation: 195W
Case: TO268HV
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
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MIXA40W1200TED IXYS MIXA40W1200TED.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 40A
Max. off-state voltage: 1.2kV
Pulsed collector current: 105A
Power dissipation: 195W
Application: motors; photovoltaics
Topology: IGBT three-phase bridge; NTC thermistor
Technology: Sonic FRD™; XPT™
Case: E2-Pack
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
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MIXA40W1200TML IXYS MIXA40W1200TML.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 40A
Max. off-state voltage: 1.2kV
Pulsed collector current: 105A
Power dissipation: 195W
Application: fans; for pump; motors
Topology: IGBT three-phase bridge; NTC thermistor
Technology: Sonic FRD™; XPT™
Case: E1-Pack
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
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VUB72-16NOXT IXYS VUB72-16NOXT.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 40A
Max. off-state voltage: 1.2kV
Pulsed collector current: 105A
Power dissipation: 195W
Application: Inverter
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Case: V1-A-Pack
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors
Type of semiconductor module: IGBT
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VUI72-16NOXT IXYS VUI72-16NOXT.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 40A
Max. off-state voltage: 1.2kV
Pulsed collector current: 105A
Power dissipation: 195W
Application: Inverter
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Case: V1-A-Pack
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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MIXA40WB1200TED MIXA40WB1200TED IXYS MIXA40WB1200TED.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 40A
Max. off-state voltage: 1.2kV
Pulsed collector current: 105A
Power dissipation: 195W
Application: motors; photovoltaics
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Technology: Sonic FRD™; XPT™
Case: E2-Pack
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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IXFH30N50P IXFH30N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB197984EACA143&compId=IXFH30N50P.pdf?ci_sign=786e1a8a67c262fcaf9881e21ab55ef68f11b8d1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; PolarHV™
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.48 EUR
9+8.12 EUR
10+7.68 EUR
Mindestbestellmenge: 7
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IXFH30N50Q3 IXFH30N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB1A7B71C31C143&compId=IXFH30N50Q3.pdf?ci_sign=d9b0ae8aa75dd9749244f6c2fb2f64691c7199e6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Technology: HiPerFET™
Produkt ist nicht verfügbar
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IXTQ30N50L IXTQ30N50L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC3D89D624D820&compId=IXTH(Q%2CT)30N50L.pdf?ci_sign=148e8656aef61e8e89994d694bfbdce963d3e1bd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTT30N50L IXTT30N50L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC3D89D624D820&compId=IXTH(Q%2CT)30N50L.pdf?ci_sign=148e8656aef61e8e89994d694bfbdce963d3e1bd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTT30N50P IXTT30N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTH30N50L2 IXTH30N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXFT30N50P IXFT30N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB197984EACA143&compId=IXFH30N50P.pdf?ci_sign=786e1a8a67c262fcaf9881e21ab55ef68f11b8d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT30N50Q3 IXFT30N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB1A7B71C31C143&compId=IXFH30N50Q3.pdf?ci_sign=d9b0ae8aa75dd9749244f6c2fb2f64691c7199e6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTH30N50P IXTH30N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTQ30N50L2 IXTQ30N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ30N50P IXTQ30N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTT30N50L2 IXTT30N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTY14N60X2 IXTY14N60X2 IXYS IXTY14N60X2_DS_1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 16.7nC
Produkt ist nicht verfügbar
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LBA716S LBA716S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4F258929B38BF&compId=lba716.pdf?ci_sign=d45d468b46d147689665005b9ee4dfd3cf1d6094 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP8
Contacts configuration: SPST-NO + SPST-NC
Type of relay: solid state
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.67 EUR
10+7.19 EUR
11+6.79 EUR
100+6.54 EUR
Mindestbestellmenge: 8
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LBA110 LBA110 IXYS littelfuse-integrated-circuits-lba110-datasheet?assetguid=5197d7d9-edb1-4128-af0b-ede0a7f87ed0 description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.58 EUR
16+4.59 EUR
17+4.33 EUR
25+4.18 EUR
Mindestbestellmenge: 13
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LBA110S LBA110S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4E457848318BF&compId=LBA110.pdf?ci_sign=73689aaabb177f26a2e2e3fb3f14154169b75211 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: SMT
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.34 EUR
16+4.59 EUR
17+4.33 EUR
Mindestbestellmenge: 9
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LBA127LS LBA127LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE31F60C7&compId=LBA127L.pdf?ci_sign=3ac0051c4930f87a115c7deddf17c4b780b22a0d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: SMT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 200mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
Mindestbestellmenge: 2
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LBA110L LBA110L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE318C0C7&compId=LBA110L.pdf?ci_sign=184de066e27ca2542f12e744423f8b91c1a51f2f Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.49 EUR
16+4.48 EUR
Mindestbestellmenge: 12
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LBA120LS LBA120LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE31C20C7&compId=LBA120L.pdf?ci_sign=2ad62a54a436b546b4f1a8cd730e92b0ce345d8b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: SMT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 20Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
8+10.05 EUR
13+5.72 EUR
14+5.41 EUR
100+5.28 EUR
Mindestbestellmenge: 8
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MKI75-06A7T
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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MKI75-06A7
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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MWI75-06A7T
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: motors
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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CPC1979J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B380C7&compId=CPC1979.pdf?ci_sign=70957c329dbb70e06230b407c35c949224c15f38
CPC1979J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1.4A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.75Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 25ms
Turn-off time: 5ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1978J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B240C7&compId=CPC1978.pdf?ci_sign=d1b88806735edf2502f5c1b340ced74d4071ed79
CPC1978J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 750mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 750mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2.3Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXFH26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFH26N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar3™
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.95 EUR
11+6.55 EUR
30+6.38 EUR
Mindestbestellmenge: 8
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IXTQ50N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4E4FF92DFD820&compId=IXTA(H%2CP%2CQ)50N25T.pdf?ci_sign=7e809dd509feff8e274b784c3f608f03c09bb7c0
IXTQ50N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO3P
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
Produkt ist nicht verfügbar
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IXBN42N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2D30CCAF5B820&compId=IXBN42N170A.pdf?ci_sign=30d9a9716fcdb2ce03625600d5208415acafc420
IXBN42N170A
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 21A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Power dissipation: 313W
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+43.5 EUR
Mindestbestellmenge: 2
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IXTY1N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDE7EBEDD57820&compId=IXTA(P%2CY)1N100P.pdf?ci_sign=2c0b34b7a016c9a1f63c9199566154da599472cc
IXTY1N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO252; 750ns
Mounting: SMD
Case: TO252
Polarisation: unipolar
Reverse recovery time: 750ns
Drain current: 1A
On-state resistance: 15Ω
Kind of channel: enhancement
Power dissipation: 50W
Features of semiconductor devices: standard power mosfet
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Produkt ist nicht verfügbar
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IXTA1N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDE7EBEDD57820&compId=IXTA(P%2CY)1N100P.pdf?ci_sign=2c0b34b7a016c9a1f63c9199566154da599472cc
IXTA1N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO263; 750ns
Mounting: SMD
Case: TO263
Polarisation: unipolar
Reverse recovery time: 750ns
Drain current: 1A
On-state resistance: 15Ω
Kind of channel: enhancement
Power dissipation: 50W
Features of semiconductor devices: standard power mosfet
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Produkt ist nicht verfügbar
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IXTP1N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDE7EBEDD57820&compId=IXTA(P%2CY)1N100P.pdf?ci_sign=2c0b34b7a016c9a1f63c9199566154da599472cc
IXTP1N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO220AB; 750ns
Mounting: THT
Case: TO220AB
Polarisation: unipolar
Reverse recovery time: 750ns
Drain current: 1A
On-state resistance: 15Ω
Kind of channel: enhancement
Power dissipation: 50W
Features of semiconductor devices: standard power mosfet
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Produkt ist nicht verfügbar
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IXBOD2-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF3591A938A58BF&compId=IXBOD2.pdf?ci_sign=fa4582bc3af32ec6981a4c739433a1bd5214673d
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.3kV
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 1.3kV
Produkt ist nicht verfügbar
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LOC117S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AE1C908A661EC&compId=LOC117.pdf?ci_sign=eb89496b2c23cbdf379c820a03dd855718cad7ee
LOC117S
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Mounting: SMD
Insulation voltage: 3.75kV
Number of channels: 1
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CS45-16IO1R pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFB71DF8D21820&compId=CS45-16io1R.pdf?ci_sign=efdda7ec6c6e9a406aed03cc4f534b63b8ad9084
CS45-16IO1R
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.64 EUR
Mindestbestellmenge: 11
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IXFH80N65X2-4 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB5825B99978BF&compId=IXFH80N65X2-4.pdf?ci_sign=e1124f754bcfef97bf067a342d7350d292757c2c
IXFH80N65X2-4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.03 EUR
5+14.63 EUR
6+13.83 EUR
Mindestbestellmenge: 4
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IXFH80N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A86DDE557C98BF&compId=IXF_80N65X2.pdf?ci_sign=09568d814d0e64a14a486ffb7ff44f5c27bd7a3c
IXFH80N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.31 EUR
6+13.53 EUR
10+13.01 EUR
Mindestbestellmenge: 5
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IXFK80N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A86DDE557C98BF&compId=IXF_80N65X2.pdf?ci_sign=09568d814d0e64a14a486ffb7ff44f5c27bd7a3c
IXFK80N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO264P
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.29 EUR
Mindestbestellmenge: 4
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IXFT80N65X2HV pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB5DDDF247B8BF&compId=IXFT80N65X2HV.pdf?ci_sign=8483671aa3976023c370bf7e90b7e5ebca15d53c
IXFT80N65X2HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
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IXTH80N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB1FA4137F58BF&compId=IXTH80N65X2.pdf?ci_sign=d8bfcad20b59804a9aa6f35033565e0055cc9678
IXTH80N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 465ns
Produkt ist nicht verfügbar
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LCA100S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF00E0C7&compId=LCA100.pdf?ci_sign=b6a13f254b82ed80bf7e6532564a0f3bc7f7be17
LCA100S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.85 EUR
26+2.79 EUR
28+2.65 EUR
Mindestbestellmenge: 13
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LAA100S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58
LAA100S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.22 EUR
16+4.69 EUR
17+4.43 EUR
50+4.42 EUR
Mindestbestellmenge: 9
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LAA100 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58
LAA100
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.13 EUR
16+4.69 EUR
17+4.43 EUR
250+4.33 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
LAA100L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892080C7&compId=LAA100L.pdf?ci_sign=133833099cee8dee4dfa302627eb4b749f2b8824
LAA100L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5 EUR
16+4.49 EUR
50+4.3 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
LCA100 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF00E0C7&compId=LCA100.pdf?ci_sign=b6a13f254b82ed80bf7e6532564a0f3bc7f7be17
LCA100
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
On-state resistance: 25Ω
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.93 EUR
26+2.79 EUR
28+2.65 EUR
250+2.59 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
LCA100L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF0260C7&compId=LCA100L.pdf?ci_sign=2944af23bbc5cad7dadbd037e13bc9d41be0ab14
LCA100L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.12 EUR
25+2.9 EUR
27+2.75 EUR
250+2.7 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
LCA100LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF0260C7&compId=LCA100L.pdf?ci_sign=2944af23bbc5cad7dadbd037e13bc9d41be0ab14
LCA100LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.73 EUR
25+2.9 EUR
27+2.75 EUR
100+2.66 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXGP36N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AEA0378A51C3820&compId=IXGA(P%2CH)36N60A3.pdf?ci_sign=ba06c4deb17583973f6fa92da2d0c294ed9e4688
IXGP36N60A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 220W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 1µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXBH24N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF2EB66970D820&compId=IXBH(t)24N170.pdf?ci_sign=2bee8c9822cc9e5187f0a7830b316f81bec56b83
IXBH24N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Gate-emitter voltage: ±20V
Collector current: 24A
Power dissipation: 250W
Pulsed collector current: 230A
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 190ns
Gate charge: 0.14µC
Turn-off time: 1285ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFR80N50Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC611820&compId=IXFR80N50Q3.pdf?ci_sign=196a018cdeecf0092ac54030991190e895b55b65
IXFR80N50Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 50A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 72mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.82 EUR
Mindestbestellmenge: 2
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IXDD604PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDD604PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.19 EUR
45+1.6 EUR
48+1.52 EUR
50+1.43 EUR
51+1.42 EUR
100+1.37 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IXDD604SITR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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IXFH16N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D52E81740A5820&compId=IXFA(H%2CP)16N60P3.pdf?ci_sign=5bf62970bec965613ad22cf903e4c096360d3162
IXFH16N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
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MMIX1T600N04T2 littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf
MMIX1T600N04T2
+1
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 40V
Pulsed drain current: 2kA
Drain current: 600A
Gate charge: 590nC
Reverse recovery time: 100ns
On-state resistance: 1.3mΩ
Power dissipation: 830W
Gate-source voltage: ±20V
Case: SMPD
Kind of channel: enhancement
Technology: GigaMOS™; TrenchT2™
Type of transistor: N-MOSFET
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+36.69 EUR
20+35.74 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXA37IF1200HJ pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F187B680865820&compId=IXA37IF1200HJ.pdf?ci_sign=d85df4621c1de3de20b1ce19f7cad76b3d699e55
IXA37IF1200HJ
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Kind of package: tube
Gate charge: 106nC
Turn-on time: 110ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 105A
Power dissipation: 195W
Collector-emitter voltage: 1.2kV
Technology: Planar; Sonic FRD™; XPT™
Case: PLUS247™
Mounting: THT
Type of transistor: IGBT
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.28 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXTH1N300P3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDC4D88D0E1820&compId=IXTH(T)1N300P3HV.pdf?ci_sign=1f4d245457177f7908df308b9e7972808bc21862
IXTH1N300P3HV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 1.8µs
On-state resistance: 50Ω
Drain current: 1A
Drain-source voltage: 3kV
Power dissipation: 195W
Case: TO247HV
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTT1N300P3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDC4D88D0E1820&compId=IXTH(T)1N300P3HV.pdf?ci_sign=1f4d245457177f7908df308b9e7972808bc21862
IXTT1N300P3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO268HV; 1.8us
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 1.8µs
On-state resistance: 50Ω
Drain current: 1A
Drain-source voltage: 3kV
Power dissipation: 195W
Case: TO268HV
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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MIXA40W1200TED MIXA40W1200TED.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 40A
Max. off-state voltage: 1.2kV
Pulsed collector current: 105A
Power dissipation: 195W
Application: motors; photovoltaics
Topology: IGBT three-phase bridge; NTC thermistor
Technology: Sonic FRD™; XPT™
Case: E2-Pack
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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MIXA40W1200TML MIXA40W1200TML.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 40A
Max. off-state voltage: 1.2kV
Pulsed collector current: 105A
Power dissipation: 195W
Application: fans; for pump; motors
Topology: IGBT three-phase bridge; NTC thermistor
Technology: Sonic FRD™; XPT™
Case: E1-Pack
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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VUB72-16NOXT VUB72-16NOXT.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 40A
Max. off-state voltage: 1.2kV
Pulsed collector current: 105A
Power dissipation: 195W
Application: Inverter
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Case: V1-A-Pack
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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VUI72-16NOXT VUI72-16NOXT.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 40A
Max. off-state voltage: 1.2kV
Pulsed collector current: 105A
Power dissipation: 195W
Application: Inverter
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Case: V1-A-Pack
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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MIXA40WB1200TED MIXA40WB1200TED.pdf
MIXA40WB1200TED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 40A
Max. off-state voltage: 1.2kV
Pulsed collector current: 105A
Power dissipation: 195W
Application: motors; photovoltaics
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Technology: Sonic FRD™; XPT™
Case: E2-Pack
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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IXFH30N50P pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB197984EACA143&compId=IXFH30N50P.pdf?ci_sign=786e1a8a67c262fcaf9881e21ab55ef68f11b8d1
IXFH30N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; PolarHV™
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.48 EUR
9+8.12 EUR
10+7.68 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFH30N50Q3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB1A7B71C31C143&compId=IXFH30N50Q3.pdf?ci_sign=d9b0ae8aa75dd9749244f6c2fb2f64691c7199e6
IXFH30N50Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Technology: HiPerFET™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ30N50L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC3D89D624D820&compId=IXTH(Q%2CT)30N50L.pdf?ci_sign=148e8656aef61e8e89994d694bfbdce963d3e1bd
IXTQ30N50L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTT30N50L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC3D89D624D820&compId=IXTH(Q%2CT)30N50L.pdf?ci_sign=148e8656aef61e8e89994d694bfbdce963d3e1bd
IXTT30N50L
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTT30N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217
IXTT30N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH30N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00
IXTH30N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT30N50P pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB197984EACA143&compId=IXFH30N50P.pdf?ci_sign=786e1a8a67c262fcaf9881e21ab55ef68f11b8d1
IXFT30N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT30N50Q3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB1A7B71C31C143&compId=IXFH30N50Q3.pdf?ci_sign=d9b0ae8aa75dd9749244f6c2fb2f64691c7199e6
IXFT30N50Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTH30N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217
IXTH30N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTQ30N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00
IXTQ30N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ30N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217
IXTQ30N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTT30N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00
IXTT30N50L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTY14N60X2 IXTY14N60X2_DS_1.pdf
IXTY14N60X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 16.7nC
Produkt ist nicht verfügbar
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LBA716S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4F258929B38BF&compId=lba716.pdf?ci_sign=d45d468b46d147689665005b9ee4dfd3cf1d6094
LBA716S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP8
Contacts configuration: SPST-NO + SPST-NC
Type of relay: solid state
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.67 EUR
10+7.19 EUR
11+6.79 EUR
100+6.54 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
LBA110 description littelfuse-integrated-circuits-lba110-datasheet?assetguid=5197d7d9-edb1-4128-af0b-ede0a7f87ed0
LBA110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.58 EUR
16+4.59 EUR
17+4.33 EUR
25+4.18 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
LBA110S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4E457848318BF&compId=LBA110.pdf?ci_sign=73689aaabb177f26a2e2e3fb3f14154169b75211
LBA110S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: SMT
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.34 EUR
16+4.59 EUR
17+4.33 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
LBA127LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE31F60C7&compId=LBA127L.pdf?ci_sign=3ac0051c4930f87a115c7deddf17c4b780b22a0d
LBA127LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: SMT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 200mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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LBA110L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE318C0C7&compId=LBA110L.pdf?ci_sign=184de066e27ca2542f12e744423f8b91c1a51f2f
LBA110L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.49 EUR
16+4.48 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
LBA120LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE31C20C7&compId=LBA120L.pdf?ci_sign=2ad62a54a436b546b4f1a8cd730e92b0ce345d8b
LBA120LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: SMT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 20Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.05 EUR
13+5.72 EUR
14+5.41 EUR
100+5.28 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
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