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IXFK120N20P IXFK120N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9869832FD820&compId=IXFH(K)120N20P.pdf?ci_sign=ab9ee0cda8be66ad18abdb1fb39f266891be68ee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Case: TO264
Mounting: THT
Drain-source voltage: 200V
Drain current: 120A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Reverse recovery time: 100ns
Power dissipation: 714W
Polarisation: unipolar
Kind of package: tube
Gate charge: 152nC
Kind of channel: enhancement
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IXTK120N20P IXTK120N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9109183E093E27&compId=IXTK120N20P-DTE.pdf?ci_sign=8d92652847182241575b90496cedc624b85642c3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264
Case: TO264
Mounting: THT
Drain-source voltage: 200V
Drain current: 120A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Reverse recovery time: 180ns
Power dissipation: 714W
Polarisation: unipolar
Kind of package: tube
Gate charge: 152nC
Technology: PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
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IXTK200N10L2 IXTK200N10L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB34B86A2118BF&compId=IXT_200N10L2.pdf?ci_sign=49250d98063d2d45ebec8fdfc12b5a8fca96c13d Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 200A; 1040W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 540nC
Kind of package: tube
Kind of channel: enhancement
Technology: Linear L2™
Reverse recovery time: 245ns
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IXTK20N150 IXTK20N150 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD34BF01127820&compId=IXTK(X)20N150.pdf?ci_sign=5b2aa8b5101db2e0624fd882f4176f4c1fee0d13 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 20A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1Ω
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.1µs
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MG12100S-BN2MM IXYS media?resourcetype=datasheets&itemid=e4f80881-79d4-48fd-9161-54b8568e400c&filename=littelfuse_power_semiconductor_igbt_module_mg12100s_bn2mm_datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: package S
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MG12150S-BN2MM IXYS littelfuse_power_semiconductor_igbt_module_mg12150s_bn2mm_datasheet.pdf.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: Y4-M5
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MG12150W-XN2MM IXYS littelfuse_power_semiconductor_igbt_module_mg12150w_xn2mm_datasheet.pdf.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: package W
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MG12200D-BN2MM IXYS media?resourcetype=datasheets&itemid=b1d1d791-3220-4cb8-a3f1-3c730251c3df&filename=littelfuse_power_semiconductor_igbt_module_mg12200d_bn2mm_datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: Y3-DCB
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CPC1964B CPC1964B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81D00C7&compId=CPC1964B.pdf?ci_sign=9f2b4265d7b4c89d5a94e1e2cec60cfd4eca4f30 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Mounting: SMT
Case: SO8
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CPC1964BX6 CPC1964BX6 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81E40C7&compId=CPC1964BX6.pdf?ci_sign=9b9c3e34b7e7142d60cacdfccc00e5c72159f0b0 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Mounting: SMT
Case: SO8
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IXYP8N90C3D1 IXYP8N90C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA81152D6A3820&compId=IXYA(P)8N90C3D1.pdf?ci_sign=c7b8202f446f82c0bef2c4432c38a5e99932308d Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Type of transistor: IGBT
Power dissipation: 125W
Mounting: THT
Kind of package: tube
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
auf Bestellung 147 Stücke:
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16+4.52 EUR
18+4.06 EUR
21+3.55 EUR
22+3.36 EUR
50+3.23 EUR
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IXYP8N90C3 IXYP8N90C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA8BDD5D271820&compId=IXYP(y)8N90C3.pdf?ci_sign=87d38d8134be933eddf2b12248973e933ae93bed Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Type of transistor: IGBT
Power dissipation: 125W
Mounting: THT
Kind of package: tube
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
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IXDN630YI IXDN630YI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
auf Bestellung 118 Stücke:
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7+10.28 EUR
9+8.14 EUR
25+7.84 EUR
50+7.82 EUR
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IXDN630MCI IXDN630MCI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 9...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
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6+12.03 EUR
9+8.14 EUR
25+7.85 EUR
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IXGN400N60A3 IXGN400N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2ECD2BBEEB820&compId=IXGN400N60A3.pdf?ci_sign=8a21fca6ac60404c1a68085a303adb5a72c3c627 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 190A
Case: SOT227B
Electrical mounting: screw
Technology: GenX3™; PT
Mechanical mounting: screw
Power dissipation: 830W
Pulsed collector current: 800A
Gate-emitter voltage: ±20V
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IXGN400N60B3 IXGN400N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2F019CE41B820&compId=IXGN400N60B3.pdf?ci_sign=67c9041076c20f7cbbce35e6237791751933bdc6 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Technology: GenX3™; PT
Mechanical mounting: screw
Power dissipation: 1kW
Pulsed collector current: 1.5kA
Gate-emitter voltage: ±20V
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MIXG240W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
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MIXG240W1200TEH IXYS media?resourcetype=datasheets&amp;itemid=da34aa4f-918f-4eb9-8e52-be6c5ad3ffe1&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg240w1200teh%2520datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
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MIXG240RF1200PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 250A
Case: E2-Pack PFP
Electrical mounting: Press-Fit
Technology: X2PT
Mechanical mounting: screw
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MIXG240W1200PZTEH IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6DCE85AEE6B20D6&compId=MIXG240W1200PZTEH.pdf?ci_sign=f2d3a18c01367c0559f2b604264f860dda0ca401 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: current shunt; IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
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LAA110 LAA110 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A47459C0E698BF&compId=LAA110.pdf?ci_sign=ccd17f31175d39f76946339f4bf405c57c47714b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: THT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
auf Bestellung 251 Stücke:
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9+8.17 EUR
17+4.4 EUR
18+4.16 EUR
Mindestbestellmenge: 9
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LAA110S LAA110S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A47459C0E698BF&compId=LAA110.pdf?ci_sign=ccd17f31175d39f76946339f4bf405c57c47714b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
auf Bestellung 218 Stücke:
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12+6.32 EUR
17+4.4 EUR
18+4.16 EUR
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LAA110PL LAA110PL IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
auf Bestellung 295 Stücke:
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15+5.06 EUR
16+4.52 EUR
17+4.26 EUR
100+4.1 EUR
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XAA117S XAA117S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
auf Bestellung 250 Stücke:
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18+4.13 EUR
31+2.35 EUR
33+2.22 EUR
250+2.17 EUR
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XAA117P XAA117P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
auf Bestellung 243 Stücke:
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18+4.13 EUR
31+2.35 EUR
33+2.22 EUR
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XAA117 XAA117 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: THT
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
auf Bestellung 210 Stücke:
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18+4.13 EUR
31+2.35 EUR
33+2.22 EUR
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PAA110LS PAA110LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
auf Bestellung 171 Stücke:
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11+6.66 EUR
12+6.49 EUR
50+6.25 EUR
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PAA110P PAA110P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.62 EUR
11+6.76 EUR
12+6.39 EUR
50+6.15 EUR
Mindestbestellmenge: 10
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PAA110PL PAA110PL IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.66 EUR
11+6.88 EUR
12+6.25 EUR
Mindestbestellmenge: 10
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PAA110S PAA110S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.04 EUR
11+6.76 EUR
12+6.39 EUR
50+6.15 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
PAA110 PAA110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: THT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.68 EUR
11+6.74 EUR
12+6.36 EUR
Mindestbestellmenge: 10
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PAA110L PAA110L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: THT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
Produkt ist nicht verfügbar
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LAA110P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
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LAA110L LAA110L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: THT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110LS LAA110LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110LSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892080C7&compId=LAA100L.pdf?ci_sign=133833099cee8dee4dfa302627eb4b749f2b8824 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110PLTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAA110LSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAA110PLTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAA110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
Produkt ist nicht verfügbar
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XAA117PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XAA117STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
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IXTN30N100L IXTN30N100L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA762DDC51FD820&compId=IXTN30N100L.pdf?ci_sign=1267cd27b10289fdcc054aa2d6c82d9805b1b00e Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.45Ω
Gate charge: 545nC
Kind of channel: enhancement
Reverse recovery time: 1µs
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Technology: Linear™
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXTB30N100L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B916FF820&compId=IXTB30N100L.pdf?ci_sign=733db101b859fd094ce1250c8d84c21345092274 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXTA130N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEFB1FFB9060D2&compId=IXTA130N10T.PDF?ci_sign=69dce128b1e5f50f401f8f86e0fd7cb4446cbc18 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Produkt ist nicht verfügbar
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IXTA130N10T-TRL IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEFB1FFB9060D2&compId=IXTA130N10T.PDF?ci_sign=69dce128b1e5f50f401f8f86e0fd7cb4446cbc18 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 77ns
Produkt ist nicht verfügbar
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IXTA130N10T7 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEF7B5A4BC20D2&compId=IXTA130N10T7.PDF?ci_sign=72380c18aa9ffac0654aa9ca714129b806c8c025 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Produkt ist nicht verfügbar
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DPG80C300HB DPG80C300HB IXYS DPG80C300HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 40Ax2; tube; Ifsm: 450A; TO247-3; 215W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.36V
Load current: 40A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.45kA
Power dissipation: 215W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.15 EUR
11+6.56 EUR
12+6.21 EUR
Mindestbestellmenge: 8
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DPG30C300PB DPG30C300PB IXYS Littelfuse-Power-Semiconductors-DPG30C300PB-Datasheet?assetguid=C29230B4-702B-4553-95E4-41ABDC8A3A6D Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.26V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.75 EUR
21+3.42 EUR
27+2.7 EUR
29+2.55 EUR
Mindestbestellmenge: 20
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DPG60C300QB DPG60C300QB IXYS Littelfuse-Power-Semiconductors-DPG60C300QB-Datasheet?assetguid=38393FCB-5AF1-4A3C-B2C9-F6797A3D1C35 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO3P
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.69 EUR
15+5.03 EUR
16+4.76 EUR
30+4.58 EUR
Mindestbestellmenge: 10
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DPF60C300HB DPF60C300HB IXYS DPF60C300HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 0.97V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.4kA
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.98 EUR
10+7.16 EUR
11+6.76 EUR
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DPG30C300HB DPG30C300HB IXYS Littelfuse-Power-Semiconductors-DPG30C300HB-Datasheet?assetguid=0400F707-7AFD-48EB-9257-C3597E59CCC5 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.25V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.52 EUR
26+2.85 EUR
27+2.69 EUR
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LF2190NTR LF2190NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F2BB37B19F40CE&compId=LF2190NTR.pdf?ci_sign=ffb9a783e484bf36f1f603b30141cdcfee16c247 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4.5...4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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IXTQ470P2 IXTQ470P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13FF820&compId=IXTQ470P2.pdf?ci_sign=76af40f262edd6db225179a4687589ac6121f39b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 42A
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTN102N65X2 IXTN102N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9E6330B4C1820&compId=IXTN102N65X2.pdf?ci_sign=9e7b58dfb51537d8509f57c064d3549be58d17de Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 76A
Pulsed drain current: 204A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 30mΩ
Gate charge: 152nC
Kind of channel: enhancement
Electrical mounting: screw
Technology: X2-Class
Reverse recovery time: 450ns
Semiconductor structure: single transistor
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXTH52N65X IXTH52N65X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B49515820&compId=IXTH52N65X.pdf?ci_sign=09c23fcab68d044a472f91698252bd936ba7f5b5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 52A; 660W; TO247-3; 435ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 52A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 435ns
Produkt ist nicht verfügbar
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IXTH62N65X2 IXTH62N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B4952B820&compId=IXTH62N65X2.pdf?ci_sign=36d0efac15306422ef53e7207db6fd4a2fefb0ff Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 62A
Power dissipation: 780W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 445ns
Produkt ist nicht verfügbar
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IXTP32N65X IXTP32N65X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC14A9F2EB3820&compId=IXTH(P%2CQ)32N65X.pdf?ci_sign=6a88174097b72279f3942c45d4c91b42e2da5718 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXFK120N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9869832FD820&compId=IXFH(K)120N20P.pdf?ci_sign=ab9ee0cda8be66ad18abdb1fb39f266891be68ee
IXFK120N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Case: TO264
Mounting: THT
Drain-source voltage: 200V
Drain current: 120A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Reverse recovery time: 100ns
Power dissipation: 714W
Polarisation: unipolar
Kind of package: tube
Gate charge: 152nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTK120N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9109183E093E27&compId=IXTK120N20P-DTE.pdf?ci_sign=8d92652847182241575b90496cedc624b85642c3
IXTK120N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264
Case: TO264
Mounting: THT
Drain-source voltage: 200V
Drain current: 120A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Reverse recovery time: 180ns
Power dissipation: 714W
Polarisation: unipolar
Kind of package: tube
Gate charge: 152nC
Technology: PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IXTK200N10L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB34B86A2118BF&compId=IXT_200N10L2.pdf?ci_sign=49250d98063d2d45ebec8fdfc12b5a8fca96c13d
IXTK200N10L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 200A; 1040W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 540nC
Kind of package: tube
Kind of channel: enhancement
Technology: Linear L2™
Reverse recovery time: 245ns
Produkt ist nicht verfügbar
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IXTK20N150 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD34BF01127820&compId=IXTK(X)20N150.pdf?ci_sign=5b2aa8b5101db2e0624fd882f4176f4c1fee0d13
IXTK20N150
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 20A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1Ω
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.1µs
Produkt ist nicht verfügbar
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MG12100S-BN2MM media?resourcetype=datasheets&itemid=e4f80881-79d4-48fd-9161-54b8568e400c&filename=littelfuse_power_semiconductor_igbt_module_mg12100s_bn2mm_datasheet.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: package S
Produkt ist nicht verfügbar
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MG12150S-BN2MM littelfuse_power_semiconductor_igbt_module_mg12150s_bn2mm_datasheet.pdf.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: Y4-M5
Produkt ist nicht verfügbar
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MG12150W-XN2MM littelfuse_power_semiconductor_igbt_module_mg12150w_xn2mm_datasheet.pdf.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: package W
Produkt ist nicht verfügbar
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MG12200D-BN2MM media?resourcetype=datasheets&itemid=b1d1d791-3220-4cb8-a3f1-3c730251c3df&filename=littelfuse_power_semiconductor_igbt_module_mg12200d_bn2mm_datasheet.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: Y3-DCB
Produkt ist nicht verfügbar
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CPC1964B pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81D00C7&compId=CPC1964B.pdf?ci_sign=9f2b4265d7b4c89d5a94e1e2cec60cfd4eca4f30
CPC1964B
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Mounting: SMT
Case: SO8
Produkt ist nicht verfügbar
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CPC1964BX6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81E40C7&compId=CPC1964BX6.pdf?ci_sign=9b9c3e34b7e7142d60cacdfccc00e5c72159f0b0
CPC1964BX6
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Mounting: SMT
Case: SO8
Produkt ist nicht verfügbar
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IXYP8N90C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA81152D6A3820&compId=IXYA(P)8N90C3D1.pdf?ci_sign=c7b8202f446f82c0bef2c4432c38a5e99932308d
IXYP8N90C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Type of transistor: IGBT
Power dissipation: 125W
Mounting: THT
Kind of package: tube
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.52 EUR
18+4.06 EUR
21+3.55 EUR
22+3.36 EUR
50+3.23 EUR
Mindestbestellmenge: 16
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IXYP8N90C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA8BDD5D271820&compId=IXYP(y)8N90C3.pdf?ci_sign=87d38d8134be933eddf2b12248973e933ae93bed
IXYP8N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Type of transistor: IGBT
Power dissipation: 125W
Mounting: THT
Kind of package: tube
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Produkt ist nicht verfügbar
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IXDN630YI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDN630YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.28 EUR
9+8.14 EUR
25+7.84 EUR
50+7.82 EUR
Mindestbestellmenge: 7
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IXDN630MCI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDN630MCI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 9...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.03 EUR
9+8.14 EUR
25+7.85 EUR
Mindestbestellmenge: 6
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IXGN400N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2ECD2BBEEB820&compId=IXGN400N60A3.pdf?ci_sign=8a21fca6ac60404c1a68085a303adb5a72c3c627
IXGN400N60A3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 190A
Case: SOT227B
Electrical mounting: screw
Technology: GenX3™; PT
Mechanical mounting: screw
Power dissipation: 830W
Pulsed collector current: 800A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXGN400N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2F019CE41B820&compId=IXGN400N60B3.pdf?ci_sign=67c9041076c20f7cbbce35e6237791751933bdc6
IXGN400N60B3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Technology: GenX3™; PT
Mechanical mounting: screw
Power dissipation: 1kW
Pulsed collector current: 1.5kA
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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MIXG240W1200PTEH
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MIXG240W1200TEH media?resourcetype=datasheets&amp;itemid=da34aa4f-918f-4eb9-8e52-be6c5ad3ffe1&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg240w1200teh%2520datasheet.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MIXG240RF1200PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 250A
Case: E2-Pack PFP
Electrical mounting: Press-Fit
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MIXG240W1200PZTEH pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6DCE85AEE6B20D6&compId=MIXG240W1200PZTEH.pdf?ci_sign=f2d3a18c01367c0559f2b604264f860dda0ca401
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: current shunt; IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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LAA110 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A47459C0E698BF&compId=LAA110.pdf?ci_sign=ccd17f31175d39f76946339f4bf405c57c47714b
LAA110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: THT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.17 EUR
17+4.4 EUR
18+4.16 EUR
Mindestbestellmenge: 9
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LAA110S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A47459C0E698BF&compId=LAA110.pdf?ci_sign=ccd17f31175d39f76946339f4bf405c57c47714b
LAA110S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.32 EUR
17+4.4 EUR
18+4.16 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
LAA110PL pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
LAA110PL
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.06 EUR
16+4.52 EUR
17+4.26 EUR
100+4.1 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
XAA117S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
XAA117S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.13 EUR
31+2.35 EUR
33+2.22 EUR
250+2.17 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
XAA117P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
XAA117P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.13 EUR
31+2.35 EUR
33+2.22 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
XAA117 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
XAA117
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: THT
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.13 EUR
31+2.35 EUR
33+2.22 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
PAA110LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085
PAA110LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.66 EUR
12+6.49 EUR
50+6.25 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
PAA110P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
PAA110P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.62 EUR
11+6.76 EUR
12+6.39 EUR
50+6.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
PAA110PL pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085
PAA110PL
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.66 EUR
11+6.88 EUR
12+6.25 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
PAA110S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
PAA110S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.04 EUR
11+6.76 EUR
12+6.39 EUR
50+6.15 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
PAA110 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
PAA110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: THT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.68 EUR
11+6.74 EUR
12+6.36 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
PAA110L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085
PAA110L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: THT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
LAA110L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: THT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
LAA110LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110LSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892080C7&compId=LAA100L.pdf?ci_sign=133833099cee8dee4dfa302627eb4b749f2b8824
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110PLTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAA110LSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAA110PLTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAA110STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XAA117PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XAA117STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
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IXTN30N100L pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA762DDC51FD820&compId=IXTN30N100L.pdf?ci_sign=1267cd27b10289fdcc054aa2d6c82d9805b1b00e
IXTN30N100L
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.45Ω
Gate charge: 545nC
Kind of channel: enhancement
Reverse recovery time: 1µs
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Technology: Linear™
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXTB30N100L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B916FF820&compId=IXTB30N100L.pdf?ci_sign=733db101b859fd094ce1250c8d84c21345092274
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXTA130N10T pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEFB1FFB9060D2&compId=IXTA130N10T.PDF?ci_sign=69dce128b1e5f50f401f8f86e0fd7cb4446cbc18
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Produkt ist nicht verfügbar
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IXTA130N10T-TRL pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEFB1FFB9060D2&compId=IXTA130N10T.PDF?ci_sign=69dce128b1e5f50f401f8f86e0fd7cb4446cbc18
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 77ns
Produkt ist nicht verfügbar
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IXTA130N10T7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEF7B5A4BC20D2&compId=IXTA130N10T7.PDF?ci_sign=72380c18aa9ffac0654aa9ca714129b806c8c025
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Produkt ist nicht verfügbar
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DPG80C300HB DPG80C300HB.pdf
DPG80C300HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 40Ax2; tube; Ifsm: 450A; TO247-3; 215W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.36V
Load current: 40A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.45kA
Power dissipation: 215W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.15 EUR
11+6.56 EUR
12+6.21 EUR
Mindestbestellmenge: 8
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DPG30C300PB Littelfuse-Power-Semiconductors-DPG30C300PB-Datasheet?assetguid=C29230B4-702B-4553-95E4-41ABDC8A3A6D
DPG30C300PB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.26V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.75 EUR
21+3.42 EUR
27+2.7 EUR
29+2.55 EUR
Mindestbestellmenge: 20
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DPG60C300QB Littelfuse-Power-Semiconductors-DPG60C300QB-Datasheet?assetguid=38393FCB-5AF1-4A3C-B2C9-F6797A3D1C35
DPG60C300QB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO3P
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.69 EUR
15+5.03 EUR
16+4.76 EUR
30+4.58 EUR
Mindestbestellmenge: 10
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DPF60C300HB DPF60C300HB.pdf
DPF60C300HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 0.97V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.4kA
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.98 EUR
10+7.16 EUR
11+6.76 EUR
Mindestbestellmenge: 8
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DPG30C300HB Littelfuse-Power-Semiconductors-DPG30C300HB-Datasheet?assetguid=0400F707-7AFD-48EB-9257-C3597E59CCC5
DPG30C300HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.25V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.52 EUR
26+2.85 EUR
27+2.69 EUR
Mindestbestellmenge: 13
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LF2190NTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F2BB37B19F40CE&compId=LF2190NTR.pdf?ci_sign=ffb9a783e484bf36f1f603b30141cdcfee16c247
LF2190NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4.5...4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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IXTQ470P2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13FF820&compId=IXTQ470P2.pdf?ci_sign=76af40f262edd6db225179a4687589ac6121f39b
IXTQ470P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 42A
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTN102N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9E6330B4C1820&compId=IXTN102N65X2.pdf?ci_sign=9e7b58dfb51537d8509f57c064d3549be58d17de
IXTN102N65X2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 76A
Pulsed drain current: 204A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 30mΩ
Gate charge: 152nC
Kind of channel: enhancement
Electrical mounting: screw
Technology: X2-Class
Reverse recovery time: 450ns
Semiconductor structure: single transistor
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXTH52N65X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B49515820&compId=IXTH52N65X.pdf?ci_sign=09c23fcab68d044a472f91698252bd936ba7f5b5
IXTH52N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 52A; 660W; TO247-3; 435ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 52A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 435ns
Produkt ist nicht verfügbar
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IXTH62N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B4952B820&compId=IXTH62N65X2.pdf?ci_sign=36d0efac15306422ef53e7207db6fd4a2fefb0ff
IXTH62N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 62A
Power dissipation: 780W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 445ns
Produkt ist nicht verfügbar
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IXTP32N65X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC14A9F2EB3820&compId=IXTH(P%2CQ)32N65X.pdf?ci_sign=6a88174097b72279f3942c45d4c91b42e2da5718
IXTP32N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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