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IXFK80N50P IXFK80N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BB72E5378B7820&compId=IXFK(X)80N50P.pdf?ci_sign=d179f385e73cb0dab5632c8fec26d14e901d5f07 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264
Drain current: 80A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 500V
auf Bestellung 12 Stücke:
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4+20.49 EUR
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IXFK100N65X2 IXFK100N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E5CCA0EF7820&compId=IXFK(X)100N65X2.pdf?ci_sign=943e818235cb436b72c8d4fa8bbbd2fba5457b4b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Drain current: 100A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 183nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 650V
auf Bestellung 4 Stücke:
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4+17.88 EUR
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IXFK32N80Q3 IXFK32N80Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC102BD600B820&compId=IXFK(X)32N80Q3.pdf?ci_sign=c47e75c209491b589467e1adbfe959bafdbee39b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Drain current: 32A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 1kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 800V
auf Bestellung 22 Stücke:
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5+16.42 EUR
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IXTK180N15P IXTK180N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9188AFD9C59E27&compId=IXTK180N15P-DTE.pdf?ci_sign=2ad7003b8dcc314cadea14ef7581e19529865817 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 144 Stücke:
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4+19.91 EUR
5+14.71 EUR
6+13.91 EUR
10+13.51 EUR
25+13.38 EUR
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IXTP120P065T IXTP120P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Reverse recovery time: 53ns
Drain-source voltage: -65V
Drain current: -120A
On-state resistance: 10mΩ
Type of transistor: P-MOSFET
Power dissipation: 298W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Mounting: THT
Case: TO220AB
auf Bestellung 282 Stücke:
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11+7.04 EUR
15+5.02 EUR
16+4.73 EUR
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IXTP120N075T2 IXTP120N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA3439A5B43820&compId=IXTA(P)120N075T2.pdf?ci_sign=a989206584ccedc296376c463764890b543910ce Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Reverse recovery time: 50ns
Drain-source voltage: 75V
Drain current: 120A
On-state resistance: 7.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 78nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
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IXTP120N04T2 IXTP120N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA2CF46A37D820&compId=IXTA(P)120N04T2.pdf?ci_sign=9781234723d86244a767988de041b1dde0e2fcc1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Reverse recovery time: 35ns
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 58nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
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IXFN130N90SK IXFN130N90SK IXYS Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 900V
Drain current: 109A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 68nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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IXFN90N170SK IXFN90N170SK IXYS media?resourcetype=datasheets&itemid=45fac7dc-a118-4a13-b201-c36d3f84bf39&filename=littelfuse%2520power%2520semiconductors%2520ixfn90n170sk%2520datasheet.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 67A; SOT227B; screw; SiC; 376nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 67A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 23mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 376nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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IXFN27N120SK IXFN27N120SK IXYS Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 21.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 160nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCMA140PD1600TB MCMA140PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B7921B0CE0C4&compId=MCMA140PD1600TB.pdf?ci_sign=c6eeb5142d57bdd4750d35a87b20279a22ab7570 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Max. off-state voltage: 1.6kV
Load current: 140A
Max. forward impulse current: 2.4kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.28V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
Type of semiconductor module: diode-thyristor
Max. load current: 220A
Semiconductor structure: double series
Gate current: 150/200mA
auf Bestellung 27 Stücke:
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2+42.91 EUR
25+41.47 EUR
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IXTP140N12T2 IXTP140N12T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDE4D4C598B820&compId=IXTA(P)140N12T2.pdf?ci_sign=96847b55de5591e2d4cc16630b5a64962539e9ba Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Power dissipation: 577W
Polarisation: unipolar
Gate charge: 174nC
Kind of channel: enhancement
Reverse recovery time: 65ns
Drain-source voltage: 120V
Drain current: 140A
On-state resistance: 10mΩ
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IXFH80N25X3 IXFH80N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285CE2107E71820&compId=IXFH(P%2CQ)80N25X3.pdf?ci_sign=98dbb1b3debc6aa179f2279e7c8f3d9ef9df9898 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO247-3; 120ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 83nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Reverse recovery time: 120ns
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
auf Bestellung 16 Stücke:
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6+12.04 EUR
9+8.21 EUR
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IXFH130N15X3 IXFH130N15X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 80nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Reverse recovery time: 80ns
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 9mΩ
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IXFP80N25X3 IXFP80N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285CE2107E71820&compId=IXFH(P%2CQ)80N25X3.pdf?ci_sign=98dbb1b3debc6aa179f2279e7c8f3d9ef9df9898 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO220AB; 120ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 83nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 120ns
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
auf Bestellung 28 Stücke:
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7+11 EUR
10+7.18 EUR
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IXFQ80N25X3 IXFQ80N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B0FB5329FB75A0C4&compId=IXFQ80N25X3.PDF?ci_sign=7536c7641f30ddaddfa252b951646f165975fbd7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 80A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
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8+8.94 EUR
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IXFA80N25X3 IXFA80N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285C1284DCA7820&compId=IXFA80N25X3.pdf?ci_sign=d69856da52cdce40fb1d6a8962dc82941b4efd06 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO263; 120ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 83nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
Reverse recovery time: 120ns
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
auf Bestellung 38 Stücke:
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8+9.78 EUR
10+7.36 EUR
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IXFH72N30X3 IXFH72N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBC8AC02F1D8BF&compId=IXF_72N30X3.pdf?ci_sign=09f98a1c935417cb47752418f14c2caee473339d pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
auf Bestellung 15 Stücke:
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6+12.87 EUR
8+9.28 EUR
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IXFQ72N30X3 IXFQ72N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBC8AC02F1D8BF&compId=IXF_72N30X3.pdf?ci_sign=09f98a1c935417cb47752418f14c2caee473339d pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO3P
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
auf Bestellung 298 Stücke:
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6+13.27 EUR
8+8.99 EUR
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IXFP130N15X3 IXFP130N15X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 80nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 80ns
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 9mΩ
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IXFP72N30X3 IXFP72N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBC8AC02F1D8BF&compId=IXF_72N30X3.pdf?ci_sign=09f98a1c935417cb47752418f14c2caee473339d Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
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IXFA130N15X3 IXFA130N15X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 80nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Reverse recovery time: 80ns
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 9mΩ
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VBO40-12NO6 VBO40-12NO6 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FECC47C9D160C4&compId=VBO40-12NO6.pdf?ci_sign=1ae93a7364f9aa25c6cf570c044bd4480bbd5514 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 40A; Ifsm: 320A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.32kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M4 screws
Case: SOT227B
auf Bestellung 134 Stücke:
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3+29.87 EUR
20+28.73 EUR
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LDA213 LDA213 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AD204370281EC&compId=LDA213.pdf?ci_sign=6bf1f535cde47fa270dceaf89ce0b7c1d34729da Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Mounting: THT
Case: DIP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
auf Bestellung 125 Stücke:
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125+0.57 EUR
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LDA213S LDA213S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AD204370281EC&compId=LDA213.pdf?ci_sign=6bf1f535cde47fa270dceaf89ce0b7c1d34729da Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
auf Bestellung 195 Stücke:
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36+1.99 EUR
45+1.62 EUR
72+1 EUR
76+0.94 EUR
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LDA210 LDA210 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC5A7355F41EC&compId=LDA210S.pdf?ci_sign=5a79258bba6a8a2cd9ee16e60c4dcb8de005b71a Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Turn-on time: 8µs
Turn-off time: 345µs
Kind of output: Darlington
Case: DIP8
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LDA212S LDA212S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACFA49FC501EC&compId=LDA212.pdf?ci_sign=e72cb57335934dbfa047478f021fb2d5b300c2bc Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA211S LDA211S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACCBFBB7BC1EC&compId=LDA211.pdf?ci_sign=4f0c7c321b42f0332d55e82cc5d135a99455a363 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA210S LDA210S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC5A7355F41EC&compId=LDA210S.pdf?ci_sign=5a79258bba6a8a2cd9ee16e60c4dcb8de005b71a Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; 3.75kV; SOP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Turn-on time: 8µs
Turn-off time: 345µs
Kind of output: Darlington
Case: SOP8
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FDA217STR FDA217STR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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LDA210STR LDA210STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC5A7355F41EC&compId=LDA210S.pdf?ci_sign=5a79258bba6a8a2cd9ee16e60c4dcb8de005b71a Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
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LDA211STR LDA211STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACCBFBB7BC1EC&compId=LDA211.pdf?ci_sign=4f0c7c321b42f0332d55e82cc5d135a99455a363 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA212 LDA212 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACFA49FC501EC&compId=LDA212.pdf?ci_sign=e72cb57335934dbfa047478f021fb2d5b300c2bc Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Mounting: THT
Case: DIP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA212STR LDA212STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACFA49FC501EC&compId=LDA212.pdf?ci_sign=e72cb57335934dbfa047478f021fb2d5b300c2bc Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA213STR LDA213STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AD204370281EC&compId=LDA213.pdf?ci_sign=6bf1f535cde47fa270dceaf89ce0b7c1d34729da Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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IXTP10P50P IXTP10P50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 414ns
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.55 EUR
14+5.32 EUR
15+5.02 EUR
100+4.83 EUR
Mindestbestellmenge: 9
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IXTP10P15T IXTP10P15T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03840D407D8BF&compId=IXT_10P15T.pdf?ci_sign=aab868e73793fd93dd8185240cab19c3a6c680af Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
24+2.97 EUR
Mindestbestellmenge: 24
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IXTP102N15T IXTP102N15T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12E1820&compId=IXTA(H%2CP%2CQ)102N15T.pdf?ci_sign=a7dd4f01d2a4226a8b0a38e27af5b16600fca392 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 97ns
Features of semiconductor devices: thrench gate power mosfet
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MDMA450UB1600PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
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MDMA360UB1600PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
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MDMA210UB1600PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mechanical mounting: screw
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MDMA280UB1600PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXTA120N04T2 IXTA120N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA2CF46A37D820&compId=IXTA(P)120N04T2.pdf?ci_sign=9781234723d86244a767988de041b1dde0e2fcc1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTH420N04T2 IXTH420N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494E9820&compId=IXTH420N04T2.pdf?ci_sign=9304d2c9a0f1384c4669abc672571b3f8ebff765 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTA220N04T2 IXTA220N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC709D95CCF820&compId=IXTA(P)220N04T2.pdf?ci_sign=1db27c209e7af5f3f0d648bd91c318079852def5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTA220N04T2-7 IXTA220N04T2-7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC7E9820&compId=IXTA220N04T2-7.pdf?ci_sign=dfbe0e0fc65622b215cc5fc0881ade14b823b82d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTN17N120L IXTN17N120L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA81B9EFCD51820&compId=IXTN17N120L.pdf?ci_sign=67609d109998c6dd7eef97d1d408d6559bb9508b Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 15A
Case: SOT227B
Electrical mounting: screw
On-state resistance: 0.9Ω
Pulsed drain current: 34A
Power dissipation: 540W
Technology: Linear™
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 1.83µs
Polarisation: unipolar
Gate charge: 155nC
Produkt ist nicht verfügbar
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IXFA36N60X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa36n60x3-datasheet?assetguid=9c561014-ffa0-419b-994f-22f5fa914d61 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Mounting: SMD
Reverse recovery time: 180ns
Drain-source voltage: 600V
Drain current: 36A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: TO263
Produkt ist nicht verfügbar
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IXFH36N60X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh36n60x3-datasheet?assetguid=38271253-e2cd-4f1f-b434-c9ed8035371e Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Mounting: THT
Reverse recovery time: 180ns
Drain-source voltage: 600V
Drain current: 36A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: TO247-3
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IXFH48N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh48n60x3_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Mounting: THT
Reverse recovery time: 163ns
Drain-source voltage: 600V
Drain current: 48A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Gate charge: 38nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 68A
Case: TO247-3
Produkt ist nicht verfügbar
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IXFH78N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh78n60x3_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 78A; Idm: 120A; 780W
Mounting: THT
Reverse recovery time: 205ns
Drain-source voltage: 600V
Drain current: 78A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Kind of package: tube
Gate charge: 70nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: TO247-3
Produkt ist nicht verfügbar
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IXFH98N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh98n60x3_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 98A; Idm: 160A; 960W
Mounting: THT
Reverse recovery time: 220ns
Drain-source voltage: 600V
Drain current: 98A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 90nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 160A
Case: TO247-3
Produkt ist nicht verfügbar
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IXFP36N60X3 IXFP36N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp36n60x3_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Mounting: THT
Reverse recovery time: 180ns
Drain-source voltage: 600V
Drain current: 36A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: TO220AB
Produkt ist nicht verfügbar
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MID145-12A3 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5
Case: Y4-M5
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 200A
Application: fans; for pump; motors; photovoltaics
Power dissipation: 700W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: NPT
Topology: boost chopper
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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VUO122-12NO7 VUO122-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88959542B90DE0C4&compId=VUO122-12NO7.pdf?ci_sign=496930c95e7335bb9c77cbb977a1448c9cbb1872 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 125A; Ifsm: 1kA
Case: ECO-PAC 2
Max. forward impulse current: 1kA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Leads: wire Ø 1.5mm
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.13V
Load current: 125A
Produkt ist nicht verfügbar
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DSEC60-12A DSEC60-12A IXYS Littelfuse-Power-Semiconductors-DSEC60-12A-Datasheet?assetguid=209f6ea6-9eb4-4faf-a3e4-37cae54527a2 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30Ax2; tube; Ifsm: 200A; TO247-3; 165W
Case: TO247-3
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.74V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Max. forward impulse current: 200A
Produkt ist nicht verfügbar
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DSSK28-006BS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC3686BF0EA60C4&compId=DSSK28-006BS.pdf?ci_sign=8d6a2a9b8016799440366e8ba8e32fee545733ca Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15Ax2; tube; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.52V
Max. forward impulse current: 0.3kA
Kind of package: tube
Max. load current: 35A
Power dissipation: 90W
Produkt ist nicht verfügbar
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VUO80-18NO1 VUO80-18NO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88804BA7A478C0C4&compId=VUO80-18NO1.pdf?ci_sign=230cb5428898efb51f6bd7b4c3578050ad14cd4d Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
Produkt ist nicht verfügbar
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VUO80-08NO1 VUO80-08NO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888040ECC780A0C4&compId=VUO80-08NO1.pdf?ci_sign=e6d40f359ac5c2632936a852c26710ff913b947c Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
Produkt ist nicht verfügbar
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IXFP230N075T2 IXFP230N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD0BBC1F507820&compId=IXFA(P)230N075T2.pdf?ci_sign=a193bb6c937ab8a381de2b728ab686af5cf3de01 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
Produkt ist nicht verfügbar
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IXFK80N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BB72E5378B7820&compId=IXFK(X)80N50P.pdf?ci_sign=d179f385e73cb0dab5632c8fec26d14e901d5f07
IXFK80N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264
Drain current: 80A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 500V
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.49 EUR
Mindestbestellmenge: 4
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IXFK100N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E5CCA0EF7820&compId=IXFK(X)100N65X2.pdf?ci_sign=943e818235cb436b72c8d4fa8bbbd2fba5457b4b
IXFK100N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Drain current: 100A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 183nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 650V
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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IXFK32N80Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC102BD600B820&compId=IXFK(X)32N80Q3.pdf?ci_sign=c47e75c209491b589467e1adbfe959bafdbee39b
IXFK32N80Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Drain current: 32A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 1kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 800V
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.42 EUR
Mindestbestellmenge: 5
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IXTK180N15P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9188AFD9C59E27&compId=IXTK180N15P-DTE.pdf?ci_sign=2ad7003b8dcc314cadea14ef7581e19529865817
IXTK180N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.91 EUR
5+14.71 EUR
6+13.91 EUR
10+13.51 EUR
25+13.38 EUR
Mindestbestellmenge: 4
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IXTP120P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7
IXTP120P065T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Reverse recovery time: 53ns
Drain-source voltage: -65V
Drain current: -120A
On-state resistance: 10mΩ
Type of transistor: P-MOSFET
Power dissipation: 298W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Mounting: THT
Case: TO220AB
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.04 EUR
15+5.02 EUR
16+4.73 EUR
Mindestbestellmenge: 11
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IXTP120N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA3439A5B43820&compId=IXTA(P)120N075T2.pdf?ci_sign=a989206584ccedc296376c463764890b543910ce
IXTP120N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Reverse recovery time: 50ns
Drain-source voltage: 75V
Drain current: 120A
On-state resistance: 7.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 78nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Produkt ist nicht verfügbar
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IXTP120N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA2CF46A37D820&compId=IXTA(P)120N04T2.pdf?ci_sign=9781234723d86244a767988de041b1dde0e2fcc1
IXTP120N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Reverse recovery time: 35ns
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 58nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Produkt ist nicht verfügbar
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IXFN130N90SK
IXFN130N90SK
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 900V
Drain current: 109A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 68nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFN90N170SK media?resourcetype=datasheets&itemid=45fac7dc-a118-4a13-b201-c36d3f84bf39&filename=littelfuse%2520power%2520semiconductors%2520ixfn90n170sk%2520datasheet.pdf
IXFN90N170SK
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 67A; SOT227B; screw; SiC; 376nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 67A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 23mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 376nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFN27N120SK
IXFN27N120SK
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 21.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 160nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCMA140PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B7921B0CE0C4&compId=MCMA140PD1600TB.pdf?ci_sign=c6eeb5142d57bdd4750d35a87b20279a22ab7570 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCMA140PD1600TB
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Max. off-state voltage: 1.6kV
Load current: 140A
Max. forward impulse current: 2.4kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.28V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
Type of semiconductor module: diode-thyristor
Max. load current: 220A
Semiconductor structure: double series
Gate current: 150/200mA
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.91 EUR
25+41.47 EUR
Mindestbestellmenge: 2
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IXTP140N12T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDE4D4C598B820&compId=IXTA(P)140N12T2.pdf?ci_sign=96847b55de5591e2d4cc16630b5a64962539e9ba
IXTP140N12T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Power dissipation: 577W
Polarisation: unipolar
Gate charge: 174nC
Kind of channel: enhancement
Reverse recovery time: 65ns
Drain-source voltage: 120V
Drain current: 140A
On-state resistance: 10mΩ
Produkt ist nicht verfügbar
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IXFH80N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285CE2107E71820&compId=IXFH(P%2CQ)80N25X3.pdf?ci_sign=98dbb1b3debc6aa179f2279e7c8f3d9ef9df9898
IXFH80N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO247-3; 120ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 83nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Reverse recovery time: 120ns
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.04 EUR
9+8.21 EUR
Mindestbestellmenge: 6
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IXFH130N15X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569
IXFH130N15X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 80nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Reverse recovery time: 80ns
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 9mΩ
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXFP80N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285CE2107E71820&compId=IXFH(P%2CQ)80N25X3.pdf?ci_sign=98dbb1b3debc6aa179f2279e7c8f3d9ef9df9898
IXFP80N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO220AB; 120ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 83nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 120ns
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11 EUR
10+7.18 EUR
Mindestbestellmenge: 7
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IXFQ80N25X3 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B0FB5329FB75A0C4&compId=IXFQ80N25X3.PDF?ci_sign=7536c7641f30ddaddfa252b951646f165975fbd7
IXFQ80N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 80A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
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IXFA80N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285C1284DCA7820&compId=IXFA80N25X3.pdf?ci_sign=d69856da52cdce40fb1d6a8962dc82941b4efd06
IXFA80N25X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO263; 120ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 83nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
Reverse recovery time: 120ns
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.78 EUR
10+7.36 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXFH72N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBC8AC02F1D8BF&compId=IXF_72N30X3.pdf?ci_sign=09f98a1c935417cb47752418f14c2caee473339d pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFH72N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.87 EUR
8+9.28 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ72N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBC8AC02F1D8BF&compId=IXF_72N30X3.pdf?ci_sign=09f98a1c935417cb47752418f14c2caee473339d pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFQ72N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO3P
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.27 EUR
8+8.99 EUR
Mindestbestellmenge: 6
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IXFP130N15X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569
IXFP130N15X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 80nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 80ns
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 9mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFP72N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBC8AC02F1D8BF&compId=IXF_72N30X3.pdf?ci_sign=09f98a1c935417cb47752418f14c2caee473339d
IXFP72N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
Produkt ist nicht verfügbar
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IXFA130N15X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569
IXFA130N15X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 80nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Reverse recovery time: 80ns
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 9mΩ
Produkt ist nicht verfügbar
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VBO40-12NO6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FECC47C9D160C4&compId=VBO40-12NO6.pdf?ci_sign=1ae93a7364f9aa25c6cf570c044bd4480bbd5514
VBO40-12NO6
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 40A; Ifsm: 320A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.32kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M4 screws
Case: SOT227B
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.87 EUR
20+28.73 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
LDA213 pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AD204370281EC&compId=LDA213.pdf?ci_sign=6bf1f535cde47fa270dceaf89ce0b7c1d34729da
LDA213
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Mounting: THT
Case: DIP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
LDA213S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AD204370281EC&compId=LDA213.pdf?ci_sign=6bf1f535cde47fa270dceaf89ce0b7c1d34729da
LDA213S
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
45+1.62 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 36
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LDA210 pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC5A7355F41EC&compId=LDA210S.pdf?ci_sign=5a79258bba6a8a2cd9ee16e60c4dcb8de005b71a
LDA210
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Turn-on time: 8µs
Turn-off time: 345µs
Kind of output: Darlington
Case: DIP8
Produkt ist nicht verfügbar
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LDA212S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACFA49FC501EC&compId=LDA212.pdf?ci_sign=e72cb57335934dbfa047478f021fb2d5b300c2bc
LDA212S
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LDA211S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACCBFBB7BC1EC&compId=LDA211.pdf?ci_sign=4f0c7c321b42f0332d55e82cc5d135a99455a363
LDA211S
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA210S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC5A7355F41EC&compId=LDA210S.pdf?ci_sign=5a79258bba6a8a2cd9ee16e60c4dcb8de005b71a
LDA210S
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; 3.75kV; SOP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Turn-on time: 8µs
Turn-off time: 345µs
Kind of output: Darlington
Case: SOP8
Produkt ist nicht verfügbar
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FDA217STR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b
FDA217STR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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LDA210STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC5A7355F41EC&compId=LDA210S.pdf?ci_sign=5a79258bba6a8a2cd9ee16e60c4dcb8de005b71a
LDA210STR
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
Produkt ist nicht verfügbar
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LDA211STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACCBFBB7BC1EC&compId=LDA211.pdf?ci_sign=4f0c7c321b42f0332d55e82cc5d135a99455a363
LDA211STR
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA212 pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACFA49FC501EC&compId=LDA212.pdf?ci_sign=e72cb57335934dbfa047478f021fb2d5b300c2bc
LDA212
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Mounting: THT
Case: DIP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LDA212STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACFA49FC501EC&compId=LDA212.pdf?ci_sign=e72cb57335934dbfa047478f021fb2d5b300c2bc
LDA212STR
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA213STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AD204370281EC&compId=LDA213.pdf?ci_sign=6bf1f535cde47fa270dceaf89ce0b7c1d34729da
LDA213STR
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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IXTP10P50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e
IXTP10P50P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 414ns
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.55 EUR
14+5.32 EUR
15+5.02 EUR
100+4.83 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXTP10P15T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03840D407D8BF&compId=IXT_10P15T.pdf?ci_sign=aab868e73793fd93dd8185240cab19c3a6c680af
IXTP10P15T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.97 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IXTP102N15T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12E1820&compId=IXTA(H%2CP%2CQ)102N15T.pdf?ci_sign=a7dd4f01d2a4226a8b0a38e27af5b16600fca392
IXTP102N15T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 97ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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MDMA450UB1600PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDMA360UB1600PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDMA210UB1600PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDMA280UB1600PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXTA120N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA2CF46A37D820&compId=IXTA(P)120N04T2.pdf?ci_sign=9781234723d86244a767988de041b1dde0e2fcc1
IXTA120N04T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTH420N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494E9820&compId=IXTH420N04T2.pdf?ci_sign=9304d2c9a0f1384c4669abc672571b3f8ebff765
IXTH420N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTA220N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC709D95CCF820&compId=IXTA(P)220N04T2.pdf?ci_sign=1db27c209e7af5f3f0d648bd91c318079852def5
IXTA220N04T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTA220N04T2-7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC7E9820&compId=IXTA220N04T2-7.pdf?ci_sign=dfbe0e0fc65622b215cc5fc0881ade14b823b82d
IXTA220N04T2-7
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTN17N120L pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA81B9EFCD51820&compId=IXTN17N120L.pdf?ci_sign=67609d109998c6dd7eef97d1d408d6559bb9508b
IXTN17N120L
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 15A
Case: SOT227B
Electrical mounting: screw
On-state resistance: 0.9Ω
Pulsed drain current: 34A
Power dissipation: 540W
Technology: Linear™
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 1.83µs
Polarisation: unipolar
Gate charge: 155nC
Produkt ist nicht verfügbar
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IXFA36N60X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa36n60x3-datasheet?assetguid=9c561014-ffa0-419b-994f-22f5fa914d61
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Mounting: SMD
Reverse recovery time: 180ns
Drain-source voltage: 600V
Drain current: 36A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: TO263
Produkt ist nicht verfügbar
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IXFH36N60X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh36n60x3-datasheet?assetguid=38271253-e2cd-4f1f-b434-c9ed8035371e
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Mounting: THT
Reverse recovery time: 180ns
Drain-source voltage: 600V
Drain current: 36A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: TO247-3
Produkt ist nicht verfügbar
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IXFH48N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh48n60x3_datasheet.pdf.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Mounting: THT
Reverse recovery time: 163ns
Drain-source voltage: 600V
Drain current: 48A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Gate charge: 38nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 68A
Case: TO247-3
Produkt ist nicht verfügbar
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IXFH78N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh78n60x3_datasheet.pdf.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 78A; Idm: 120A; 780W
Mounting: THT
Reverse recovery time: 205ns
Drain-source voltage: 600V
Drain current: 78A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Kind of package: tube
Gate charge: 70nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: TO247-3
Produkt ist nicht verfügbar
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IXFH98N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh98n60x3_datasheet.pdf.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 98A; Idm: 160A; 960W
Mounting: THT
Reverse recovery time: 220ns
Drain-source voltage: 600V
Drain current: 98A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 90nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 160A
Case: TO247-3
Produkt ist nicht verfügbar
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IXFP36N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp36n60x3_datasheet.pdf.pdf
IXFP36N60X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Mounting: THT
Reverse recovery time: 180ns
Drain-source voltage: 600V
Drain current: 36A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: TO220AB
Produkt ist nicht verfügbar
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MID145-12A3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5
Case: Y4-M5
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 200A
Application: fans; for pump; motors; photovoltaics
Power dissipation: 700W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: NPT
Topology: boost chopper
Type of semiconductor module: IGBT
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VUO122-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88959542B90DE0C4&compId=VUO122-12NO7.pdf?ci_sign=496930c95e7335bb9c77cbb977a1448c9cbb1872
VUO122-12NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 125A; Ifsm: 1kA
Case: ECO-PAC 2
Max. forward impulse current: 1kA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Leads: wire Ø 1.5mm
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.13V
Load current: 125A
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DSEC60-12A Littelfuse-Power-Semiconductors-DSEC60-12A-Datasheet?assetguid=209f6ea6-9eb4-4faf-a3e4-37cae54527a2
DSEC60-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30Ax2; tube; Ifsm: 200A; TO247-3; 165W
Case: TO247-3
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.74V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Max. forward impulse current: 200A
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DSSK28-006BS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC3686BF0EA60C4&compId=DSSK28-006BS.pdf?ci_sign=8d6a2a9b8016799440366e8ba8e32fee545733ca
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15Ax2; tube; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.52V
Max. forward impulse current: 0.3kA
Kind of package: tube
Max. load current: 35A
Power dissipation: 90W
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VUO80-18NO1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88804BA7A478C0C4&compId=VUO80-18NO1.pdf?ci_sign=230cb5428898efb51f6bd7b4c3578050ad14cd4d
VUO80-18NO1
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
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VUO80-08NO1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888040ECC780A0C4&compId=VUO80-08NO1.pdf?ci_sign=e6d40f359ac5c2632936a852c26710ff913b947c
VUO80-08NO1
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
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IXFP230N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD0BBC1F507820&compId=IXFA(P)230N075T2.pdf?ci_sign=a193bb6c937ab8a381de2b728ab686af5cf3de01
IXFP230N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
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