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DSP8-08A DSP8-08A IXYS Littelfuse-Power-Semiconductors-DSP8-08A-Datasheet?assetguid=cb034645-c550-4ca3-9793-0552505757de Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 120A; TO220AB; 100W
Max. forward voltage: 1.16V
Load current: 8A
Semiconductor structure: double series
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Type of diode: rectifying
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.8kV
auf Bestellung 261 Stücke:
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22+3.29 EUR
35+2.06 EUR
37+1.96 EUR
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LDA203S LDA203S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC2F747AE01EC&compId=LDA203.pdf?ci_sign=e8c00693dacd4003e8fc035e9efcac42f0fb87f6 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
auf Bestellung 205 Stücke:
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42+1.72 EUR
52+1.39 EUR
84+0.86 EUR
88+0.82 EUR
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IXFR36N60P IXFR36N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C69820&compId=IXFR36N60P.pdf?ci_sign=1fc4fe4794b8f3159b3dfb104d4d3e4c0fa4fdea Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
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IXDN630CI IXDN630CI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 135ns
Turn-on time: 135ns
auf Bestellung 144 Stücke:
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7+10.77 EUR
8+8.97 EUR
9+8.47 EUR
25+8.34 EUR
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IXDI602SIA IXDI602SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 93ns
Turn-on time: 93ns
auf Bestellung 975 Stücke:
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28+2.63 EUR
44+1.66 EUR
68+1.06 EUR
72+1 EUR
300+0.97 EUR
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IXDI614PI IXDI614PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 521 Stücke:
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20+3.58 EUR
32+2.25 EUR
34+2.13 EUR
100+2.04 EUR
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IXDN630MYI IXDN630MYI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 135ns
Turn-on time: 135ns
auf Bestellung 40 Stücke:
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7+10.3 EUR
9+8.14 EUR
10+8.05 EUR
25+7.82 EUR
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IXTP36P15P IXTP36P15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA025489909D8BF&compId=IXT_36P15P.pdf?ci_sign=43e84b0c7625b0bc77fce7d732308fb491cdfed2 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
auf Bestellung 220 Stücke:
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9+8.68 EUR
14+5.32 EUR
15+5.02 EUR
100+4.83 EUR
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IXTP62N15P IXTP62N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CB5157625E27&compId=IXTA62N15P-DTE.pdf?ci_sign=ce5c2df138c0e64408a93ae777b5bf73ab6a7919 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 267 Stücke:
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13+5.53 EUR
21+3.53 EUR
22+3.35 EUR
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IXTR36P15P IXTR36P15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA02959DD0F78BF&compId=IXTR36P15P.pdf?ci_sign=7d9e4cf04ef12fee99949599ef3d6caa0088dafd Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -22A; 150W; 150ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -22A
Power dissipation: 150W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 52 Stücke:
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11+7.14 EUR
12+6.31 EUR
13+5.53 EUR
14+5.23 EUR
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IXTA15P15T IXTA15P15T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0315E91ECF8BF&compId=IXT_15P15T.pdf?ci_sign=89c9e7e0f50fcdf0bdf9b8cab3248220932eecac Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
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IXTY15P15T IXTY15P15T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0315E91ECF8BF&compId=IXT_15P15T.pdf?ci_sign=89c9e7e0f50fcdf0bdf9b8cab3248220932eecac Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
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IXTQ36P15P IXTQ36P15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA025489909D8BF&compId=IXT_36P15P.pdf?ci_sign=43e84b0c7625b0bc77fce7d732308fb491cdfed2 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
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IXTQ62N15P IXTQ62N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CB5157625E27&compId=IXTA62N15P-DTE.pdf?ci_sign=ce5c2df138c0e64408a93ae777b5bf73ab6a7919 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTA62N15P IXTA62N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CB5157625E27&compId=IXTA62N15P-DTE.pdf?ci_sign=ce5c2df138c0e64408a93ae777b5bf73ab6a7919 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTH36P15P IXTH36P15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA025489909D8BF&compId=IXT_36P15P.pdf?ci_sign=43e84b0c7625b0bc77fce7d732308fb491cdfed2 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
Produkt ist nicht verfügbar
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IXTQ96N15P IXTQ96N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90EC0ECEF9BE27&compId=IXTQ96N15P-DTE.pdf?ci_sign=9a803a13d2a5038b9b223d3543d625d7c814ed76 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTR62N15P IXTR62N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F145B820&compId=IXTR62N15P.pdf?ci_sign=c9a9746ec789fb1dc7bc0d029a6c0b1e13dfca75 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 150W; ISOPLUS247™; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 150W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXTT96N15P IXTT96N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90EC0ECEF9BE27&compId=IXTQ96N15P-DTE.pdf?ci_sign=9a803a13d2a5038b9b223d3543d625d7c814ed76 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTP3N100D2 IXTP3N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBD9B42C73B820&compId=IXTA(P)3N100D2.pdf?ci_sign=c245ce0cffe79380fadde6d25a375768a49f0754 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.06 EUR
26+2.76 EUR
28+2.62 EUR
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IXTP08N100P IXTP08N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D9641FC3F820&compId=IXTA(P%2CY)08N100P.pdf?ci_sign=401fa2ad4a14adfb35f84e1f4d1d7ff0a0c5450a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 20Ω
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.6 EUR
31+2.36 EUR
39+1.86 EUR
41+1.76 EUR
250+1.73 EUR
Mindestbestellmenge: 28
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IXTP6N100D2 IXTP6N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D45948322AD820&compId=IXTA(H%2CP)6N100D2.pdf?ci_sign=ae2f4eab8381be464d1f510c96b6fa260d11e708 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.21 EUR
9+8.28 EUR
10+7.84 EUR
50+7.71 EUR
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IXTY1R6N100D2 IXTY1R6N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 100W
Case: TO252
Mounting: SMD
Kind of package: tube
Reverse recovery time: 11ns
Drain-source voltage: 1kV
Drain current: 1.6A
On-state resistance: 10Ω
Gate charge: 645nC
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 317 Stücke:
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18+4 EUR
20+3.6 EUR
25+2.86 EUR
27+2.7 EUR
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IXFK26N100P IXFK26N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED0210783C38BF&compId=IXFK26N100P_IXFX26N100P.pdf?ci_sign=e3bbcbcc0f83667d3f1a627314a9d5c5be08eed7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO264
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 26A
On-state resistance: 390mΩ
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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MD16110A-DKM2MM IXYS littelfuse_power_semiconductor_rectifier_module_circuit_package_a_datasheet.pdf?assetguid=7ed5c66f-3580-4b5e-91ee-69f455430ce8 Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 110A; package A
Case: package A
Max. off-state voltage: 1.6kV
Max. load current: 170A
Max. forward voltage: 1.6V
Load current: 110A
Semiconductor structure: common cathode; double
Max. forward impulse current: 2.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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IXBOD1-21R IXBOD1-21R IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4 Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; bulk; 2.1kV
Kind of package: bulk
Breakover voltage: 2.1kV
Type of thyristor: BOD x3
Mounting: THT
Case: BOD
Max. load current: 0.9A
auf Bestellung 9 Stücke:
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1+88.93 EUR
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DHG40C600HB DHG40C600HB IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA52EF03A6D4143&compId=DHG40C600HB.pdf?ci_sign=96d78342f11e3ccd059a919ee824b4f145a90d11 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20Ax2; tube; Ifsm: 150A; TO247-3; 140W
Load current: 20A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Max. forward impulse current: 150A
Power dissipation: 140W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.19V
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.51 EUR
11+6.51 EUR
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IXTT10N100D2 IXTT10N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3125E13B47820&compId=IXTH(T)10N100D2.pdf?ci_sign=fea7a32eed96d4aca8c20c0d37bcc4194c5ed7a0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO268
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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IXTH10N100D2 IXTH10N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3125E13B47820&compId=IXTH(T)10N100D2.pdf?ci_sign=fea7a32eed96d4aca8c20c0d37bcc4194c5ed7a0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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IXTT10N100D IXTT10N100D IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1487820&compId=IXTH(T)10N100D.pdf?ci_sign=3be67cb3e02e1fcc22bdf1490b0df9caffc7fd50 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 850ns
Produkt ist nicht verfügbar
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IXTH110N10L2 IXTH110N10L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A32F17C5AFB820&compId=IXTH(T)110N10L2.pdf?ci_sign=77ea8838b7a67aed409c2ff62bff94f2ca25fbfe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 230ns
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXTT110N10L2 IXTT110N10L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A32F17C5AFB820&compId=IXTH(T)110N10L2.pdf?ci_sign=77ea8838b7a67aed409c2ff62bff94f2ca25fbfe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
Produkt ist nicht verfügbar
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IXTQ110N10P IXTQ110N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9100B78535BE27&compId=IXTQ110N10P-DTE.pdf?ci_sign=e6f683e1c5ed1f470d8dbb0f27a53c45ede76033 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
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IXTT110N10P IXTT110N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9100B78535BE27&compId=IXTQ110N10P-DTE.pdf?ci_sign=e6f683e1c5ed1f470d8dbb0f27a53c45ede76033 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
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DSA15I45PA DSA15I45PA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C8E6C7B3F538BF&compId=DSA15I45PA.pdf?ci_sign=42a4764506b63c76dc332c69ee294d95e673cf87 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 0.63V
Mounting: THT
Case: TO220AC
Semiconductor structure: single diode
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward voltage: 0.63V
Load current: 15A
auf Bestellung 642 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
167+0.43 EUR
173+0.41 EUR
179+0.4 EUR
250+0.39 EUR
Mindestbestellmenge: 157
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DSA15IM45IB DSA15IM45IB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9044DB3B2F8BF&compId=DSA15IM45IB.pdf?ci_sign=d799d9985601cddeeb334e355aa21f9928a56a60 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.63V; 85W
Mounting: THT
Case: TO262
Semiconductor structure: single diode
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward voltage: 0.63V
Load current: 15A
auf Bestellung 546 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
167+0.43 EUR
173+0.41 EUR
179+0.4 EUR
250+0.39 EUR
Mindestbestellmenge: 157
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IXBF20N360 IXBF20N360 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB0764186D5D820&compId=IXBF20N360.pdf?ci_sign=18410bfd21cf1d94937ff17dfa086a0c8441bd5e Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W
Type of transistor: IGBT
Technology: BiMOSFET™
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: high voltage
Collector-emitter voltage: 3.6kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 220A
Power dissipation: 230W
Produkt ist nicht verfügbar
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IXBX50N360HV IXBX50N360HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB080BF8F08F820&compId=IXBX50N360HV.pdf?ci_sign=27f7f14b722c1356b8281c22abffec080280743c Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 50A; 660W; TO247HV
Type of transistor: IGBT
Technology: BiMOSFET™
Case: TO247HV
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: high voltage
Collector-emitter voltage: 3.6kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 420A
Turn-on time: 889ns
Turn-off time: 1.88µs
Power dissipation: 660W
Produkt ist nicht verfügbar
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IXTR140P10T IXTR140P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA05299A4BE38BF&compId=IXTR140P10T.pdf?ci_sign=ba23e76c64dd5f72d2acb545d9b6fb00d610f006 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Mounting: THT
Case: ISOPLUS247™
Reverse recovery time: 130ns
Drain-source voltage: -100V
Drain current: -110A
On-state resistance: 11mΩ
Type of transistor: P-MOSFET
Power dissipation: 270W
Polarisation: unipolar
Kind of package: tube
Gate charge: 400nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Produkt ist nicht verfügbar
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MCC56-12io1B MCC56-12io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4DFEE3B1F8469&compId=MCC56-12IO1B.pdf?ci_sign=3d03519b9644188d274c313de978d4fb29fcc8ed pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.62V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.62kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 26 Stücke:
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3+30.93 EUR
10+29.74 EUR
Mindestbestellmenge: 3
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MCC56-12io8B MCC56-12io8B IXYS pVersion=0046&contRep=ZT&docId=E1C051B73AFC14F1A6F5005056AB5A8F&compId=MCC56-12IO8B.pdf?ci_sign=a99ae9b9d19a52e182fb55e01a2f29cd6979770c pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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VUO82-16NO7 VUO82-16NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB4CC30B9692143&compId=VUO82-16NO7.pdf?ci_sign=45519a3bdfe60d1d3019f70dbc92c5cf93174716 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 41 Stücke:
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2+44.47 EUR
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VUO82-12NO7 VUO82-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880186BEAA2C0C4&compId=VUO82-12NO7.pdf?ci_sign=58fb59bf82812a1945f3a1b3d25cceaa134485d5 description Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 44 Stücke:
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2+40.6 EUR
10+39.04 EUR
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VUO82-14NO7 VUO82-14NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88801E380A29C0C4&compId=VUO82-14NO7.pdf?ci_sign=b8d3c7985f315fe50bc8fb4f10836f8044a49eeb Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.4kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 16 Stücke:
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2+42.53 EUR
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VUO82-18NO7 VUO82-18NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888023452F31C0C4&compId=VUO82-18NO7.pdf?ci_sign=73b63ee97f3e1ec78f8ec7ed5409494ee7bf5094 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 9 Stücke:
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2+46.4 EUR
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VUO82-08NO7 VUO82-08NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888014EAF25800C4&compId=VUO82-08NO7.pdf?ci_sign=07024e22d6cfbad8bf19881cb6785be310767c03 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 11 Stücke:
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2+38.67 EUR
Mindestbestellmenge: 2
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IXFP4N100P IXFP4N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D504A4ED455820&compId=IXFA(P)4N100P.pdf?ci_sign=3bc1928e6ac9c7c21646c91f222f882230a1532c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Power dissipation: 150W
auf Bestellung 300 Stücke:
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18+4.06 EUR
23+3.23 EUR
24+3.06 EUR
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MDD44-16N1B MDD44-16N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E06594818A9E28&compId=MDD44-16N1B-DTE.pdf?ci_sign=fbbee8bc1937034edeac589e08187ade38ea8993 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
auf Bestellung 39 Stücke:
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3+27.73 EUR
36+27.17 EUR
Mindestbestellmenge: 3
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MDD44-18N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E0BD102E6F3E28&compId=MDD44-18N1B-DTE.pdf?ci_sign=90b08c017c93147e8a1824769076869af254c496 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
3+29.09 EUR
Mindestbestellmenge: 3
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MDD44-12N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7DFF7A2F9DEDE28&compId=MDD44-12N1B-DTE.pdf?ci_sign=2e2662b5c66fd555f9064e439004627138f29920 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD44-08N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82E5F73F94C0C4&compId=MDD44-08N1B.pdf?ci_sign=8ce4774383a16251b4e46bc3cdfd82111886e2fb pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 800V; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD44-14N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82FE2F4DCE00C4&compId=MDD44-14N1B.pdf?ci_sign=69ee4c879c4e0a1c879a5920bbcd187ac0713809 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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FBE22-06N1 FBE22-06N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE987F5933B49D018BF&compId=FBE22-06N1.pdf?ci_sign=7ea1713ca283cb8800d681aa2a8c9d4a27a181dc Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 22A
Max. forward impulse current: 50A
Electrical mounting: THT
Case: ISOPLUS i4-pac™ x024a
Kind of package: tube
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.15 EUR
6+12.87 EUR
25+12.54 EUR
Mindestbestellmenge: 4
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FBO40-12N FBO40-12N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F568EC30FF80C4&compId=FBO40-12N.pdf?ci_sign=9895fe3e7ce9361ef90ab2bf718ada817d00a593 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1.2kV; If: 40A; Ifsm: 300A; THT
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.3kA
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Case: ISOPLUS i4-pac™ x024a
auf Bestellung 37 Stücke:
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4+17.93 EUR
25+17.27 EUR
Mindestbestellmenge: 4
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IXKC23N60C5 IXKC23N60C5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC6CB820&compId=IXKC23N60C5.pdf?ci_sign=c1a5b75b3ab726fbed4e498e342a467c0b978d16 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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DSI30-12A DSI30-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEECF6943966143&compId=DSI30-12A.pdf?ci_sign=f9a445f10c0aa8da27c3439715f2c7bf4e306c19 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 0.3kA
Kind of package: tube
Power dissipation: 160W
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.17 EUR
37+1.94 EUR
39+1.84 EUR
Mindestbestellmenge: 23
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MCMA400PD1600PTSF IXYS Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 1.6kV
Max. load current: 630A
Load current: 400A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit; screw
Type of semiconductor module: diode-thyristor
Case: SimBus F
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CPC1302G CPC1302G IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AA7859A3521EC&compId=CPC1302.pdf?ci_sign=144bfd2503e02a373942f882ef05b0562a26aa60 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Case: DIP8
Mounting: THT
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 1000-8000%@1mA
Type of optocoupler: optocoupler
auf Bestellung 346 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.95 EUR
38+1.93 EUR
40+1.82 EUR
Mindestbestellmenge: 25
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CPC1302GSTR CPC1302GSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AA7859A3521EC&compId=CPC1302.pdf?ci_sign=144bfd2503e02a373942f882ef05b0562a26aa60 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
Mounting: SMD
Number of channels: 2
Max. off-state voltage: 5V
Turn-on time: 1µs
Turn-off time: 80µs
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 1000-8000%@1mA
Trigger current: 50mA
Slew rate: 0.25V/μs
Type of optocoupler: optocoupler
auf Bestellung 521 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.43 EUR
36+2.02 EUR
38+1.9 EUR
500+1.83 EUR
Mindestbestellmenge: 21
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CPC1302GS CPC1302GS IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AA7859A3521EC&compId=CPC1302.pdf?ci_sign=144bfd2503e02a373942f882ef05b0562a26aa60 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
Mounting: SMD
Number of channels: 2
Max. off-state voltage: 5V
Turn-on time: 1µs
Turn-off time: 80µs
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 1000-8000%@1mA
Trigger current: 50mA
Slew rate: 0.25V/μs
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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DSP8-08A Littelfuse-Power-Semiconductors-DSP8-08A-Datasheet?assetguid=cb034645-c550-4ca3-9793-0552505757de
DSP8-08A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 120A; TO220AB; 100W
Max. forward voltage: 1.16V
Load current: 8A
Semiconductor structure: double series
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Type of diode: rectifying
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.8kV
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.29 EUR
35+2.06 EUR
37+1.96 EUR
Mindestbestellmenge: 22
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LDA203S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC2F747AE01EC&compId=LDA203.pdf?ci_sign=e8c00693dacd4003e8fc035e9efcac42f0fb87f6
LDA203S
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
52+1.39 EUR
84+0.86 EUR
88+0.82 EUR
Mindestbestellmenge: 42
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IXFR36N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C69820&compId=IXFR36N60P.pdf?ci_sign=1fc4fe4794b8f3159b3dfb104d4d3e4c0fa4fdea
IXFR36N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXDN630CI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDN630CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 135ns
Turn-on time: 135ns
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.77 EUR
8+8.97 EUR
9+8.47 EUR
25+8.34 EUR
Mindestbestellmenge: 7
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IXDI602SIA pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDI602SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 93ns
Turn-on time: 93ns
auf Bestellung 975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.63 EUR
44+1.66 EUR
68+1.06 EUR
72+1 EUR
300+0.97 EUR
Mindestbestellmenge: 28
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IXDI614PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDI614PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 521 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
32+2.25 EUR
34+2.13 EUR
100+2.04 EUR
Mindestbestellmenge: 20
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IXDN630MYI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDN630MYI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 135ns
Turn-on time: 135ns
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.3 EUR
9+8.14 EUR
10+8.05 EUR
25+7.82 EUR
Mindestbestellmenge: 7
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IXTP36P15P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA025489909D8BF&compId=IXT_36P15P.pdf?ci_sign=43e84b0c7625b0bc77fce7d732308fb491cdfed2
IXTP36P15P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.68 EUR
14+5.32 EUR
15+5.02 EUR
100+4.83 EUR
Mindestbestellmenge: 9
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IXTP62N15P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CB5157625E27&compId=IXTA62N15P-DTE.pdf?ci_sign=ce5c2df138c0e64408a93ae777b5bf73ab6a7919
IXTP62N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.53 EUR
21+3.53 EUR
22+3.35 EUR
Mindestbestellmenge: 13
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IXTR36P15P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA02959DD0F78BF&compId=IXTR36P15P.pdf?ci_sign=7d9e4cf04ef12fee99949599ef3d6caa0088dafd
IXTR36P15P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -22A; 150W; 150ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -22A
Power dissipation: 150W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.14 EUR
12+6.31 EUR
13+5.53 EUR
14+5.23 EUR
Mindestbestellmenge: 11
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IXTA15P15T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0315E91ECF8BF&compId=IXT_15P15T.pdf?ci_sign=89c9e7e0f50fcdf0bdf9b8cab3248220932eecac
IXTA15P15T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
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IXTY15P15T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0315E91ECF8BF&compId=IXT_15P15T.pdf?ci_sign=89c9e7e0f50fcdf0bdf9b8cab3248220932eecac
IXTY15P15T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
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IXTQ36P15P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA025489909D8BF&compId=IXT_36P15P.pdf?ci_sign=43e84b0c7625b0bc77fce7d732308fb491cdfed2
IXTQ36P15P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
Produkt ist nicht verfügbar
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IXTQ62N15P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CB5157625E27&compId=IXTA62N15P-DTE.pdf?ci_sign=ce5c2df138c0e64408a93ae777b5bf73ab6a7919
IXTQ62N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTA62N15P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CB5157625E27&compId=IXTA62N15P-DTE.pdf?ci_sign=ce5c2df138c0e64408a93ae777b5bf73ab6a7919
IXTA62N15P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTH36P15P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA025489909D8BF&compId=IXT_36P15P.pdf?ci_sign=43e84b0c7625b0bc77fce7d732308fb491cdfed2
IXTH36P15P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
Produkt ist nicht verfügbar
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IXTQ96N15P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90EC0ECEF9BE27&compId=IXTQ96N15P-DTE.pdf?ci_sign=9a803a13d2a5038b9b223d3543d625d7c814ed76
IXTQ96N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTR62N15P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F145B820&compId=IXTR62N15P.pdf?ci_sign=c9a9746ec789fb1dc7bc0d029a6c0b1e13dfca75
IXTR62N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 150W; ISOPLUS247™; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 150W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXTT96N15P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90EC0ECEF9BE27&compId=IXTQ96N15P-DTE.pdf?ci_sign=9a803a13d2a5038b9b223d3543d625d7c814ed76
IXTT96N15P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTP3N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBD9B42C73B820&compId=IXTA(P)3N100D2.pdf?ci_sign=c245ce0cffe79380fadde6d25a375768a49f0754
IXTP3N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.06 EUR
26+2.76 EUR
28+2.62 EUR
Mindestbestellmenge: 15
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IXTP08N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D9641FC3F820&compId=IXTA(P%2CY)08N100P.pdf?ci_sign=401fa2ad4a14adfb35f84e1f4d1d7ff0a0c5450a
IXTP08N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 20Ω
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.6 EUR
31+2.36 EUR
39+1.86 EUR
41+1.76 EUR
250+1.73 EUR
Mindestbestellmenge: 28
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IXTP6N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D45948322AD820&compId=IXTA(H%2CP)6N100D2.pdf?ci_sign=ae2f4eab8381be464d1f510c96b6fa260d11e708
IXTP6N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.21 EUR
9+8.28 EUR
10+7.84 EUR
50+7.71 EUR
Mindestbestellmenge: 7
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IXTY1R6N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be
IXTY1R6N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 100W
Case: TO252
Mounting: SMD
Kind of package: tube
Reverse recovery time: 11ns
Drain-source voltage: 1kV
Drain current: 1.6A
On-state resistance: 10Ω
Gate charge: 645nC
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 317 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4 EUR
20+3.6 EUR
25+2.86 EUR
27+2.7 EUR
Mindestbestellmenge: 18
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IXFK26N100P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED0210783C38BF&compId=IXFK26N100P_IXFX26N100P.pdf?ci_sign=e3bbcbcc0f83667d3f1a627314a9d5c5be08eed7
IXFK26N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO264
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 26A
On-state resistance: 390mΩ
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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MD16110A-DKM2MM littelfuse_power_semiconductor_rectifier_module_circuit_package_a_datasheet.pdf?assetguid=7ed5c66f-3580-4b5e-91ee-69f455430ce8
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 110A; package A
Case: package A
Max. off-state voltage: 1.6kV
Max. load current: 170A
Max. forward voltage: 1.6V
Load current: 110A
Semiconductor structure: common cathode; double
Max. forward impulse current: 2.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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IXBOD1-21R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4
IXBOD1-21R
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; bulk; 2.1kV
Kind of package: bulk
Breakover voltage: 2.1kV
Type of thyristor: BOD x3
Mounting: THT
Case: BOD
Max. load current: 0.9A
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+88.93 EUR
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DHG40C600HB pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA52EF03A6D4143&compId=DHG40C600HB.pdf?ci_sign=96d78342f11e3ccd059a919ee824b4f145a90d11
DHG40C600HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20Ax2; tube; Ifsm: 150A; TO247-3; 140W
Load current: 20A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Max. forward impulse current: 150A
Power dissipation: 140W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.19V
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.51 EUR
11+6.51 EUR
Mindestbestellmenge: 9
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IXTT10N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3125E13B47820&compId=IXTH(T)10N100D2.pdf?ci_sign=fea7a32eed96d4aca8c20c0d37bcc4194c5ed7a0
IXTT10N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO268
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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IXTH10N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3125E13B47820&compId=IXTH(T)10N100D2.pdf?ci_sign=fea7a32eed96d4aca8c20c0d37bcc4194c5ed7a0
IXTH10N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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IXTT10N100D pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1487820&compId=IXTH(T)10N100D.pdf?ci_sign=3be67cb3e02e1fcc22bdf1490b0df9caffc7fd50
IXTT10N100D
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 850ns
Produkt ist nicht verfügbar
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IXTH110N10L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A32F17C5AFB820&compId=IXTH(T)110N10L2.pdf?ci_sign=77ea8838b7a67aed409c2ff62bff94f2ca25fbfe
IXTH110N10L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 230ns
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXTT110N10L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A32F17C5AFB820&compId=IXTH(T)110N10L2.pdf?ci_sign=77ea8838b7a67aed409c2ff62bff94f2ca25fbfe
IXTT110N10L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
Produkt ist nicht verfügbar
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IXTQ110N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9100B78535BE27&compId=IXTQ110N10P-DTE.pdf?ci_sign=e6f683e1c5ed1f470d8dbb0f27a53c45ede76033
IXTQ110N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
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IXTT110N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9100B78535BE27&compId=IXTQ110N10P-DTE.pdf?ci_sign=e6f683e1c5ed1f470d8dbb0f27a53c45ede76033
IXTT110N10P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
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DSA15I45PA pVersion=0046&contRep=ZT&docId=005056AB82531EE991C8E6C7B3F538BF&compId=DSA15I45PA.pdf?ci_sign=42a4764506b63c76dc332c69ee294d95e673cf87
DSA15I45PA
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 0.63V
Mounting: THT
Case: TO220AC
Semiconductor structure: single diode
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward voltage: 0.63V
Load current: 15A
auf Bestellung 642 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
167+0.43 EUR
173+0.41 EUR
179+0.4 EUR
250+0.39 EUR
Mindestbestellmenge: 157
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DSA15IM45IB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9044DB3B2F8BF&compId=DSA15IM45IB.pdf?ci_sign=d799d9985601cddeeb334e355aa21f9928a56a60
DSA15IM45IB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.63V; 85W
Mounting: THT
Case: TO262
Semiconductor structure: single diode
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward voltage: 0.63V
Load current: 15A
auf Bestellung 546 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
167+0.43 EUR
173+0.41 EUR
179+0.4 EUR
250+0.39 EUR
Mindestbestellmenge: 157
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IXBF20N360 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB0764186D5D820&compId=IXBF20N360.pdf?ci_sign=18410bfd21cf1d94937ff17dfa086a0c8441bd5e
IXBF20N360
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W
Type of transistor: IGBT
Technology: BiMOSFET™
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: high voltage
Collector-emitter voltage: 3.6kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 220A
Power dissipation: 230W
Produkt ist nicht verfügbar
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IXBX50N360HV pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB080BF8F08F820&compId=IXBX50N360HV.pdf?ci_sign=27f7f14b722c1356b8281c22abffec080280743c
IXBX50N360HV
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 50A; 660W; TO247HV
Type of transistor: IGBT
Technology: BiMOSFET™
Case: TO247HV
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: high voltage
Collector-emitter voltage: 3.6kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 420A
Turn-on time: 889ns
Turn-off time: 1.88µs
Power dissipation: 660W
Produkt ist nicht verfügbar
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IXTR140P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA05299A4BE38BF&compId=IXTR140P10T.pdf?ci_sign=ba23e76c64dd5f72d2acb545d9b6fb00d610f006
IXTR140P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Mounting: THT
Case: ISOPLUS247™
Reverse recovery time: 130ns
Drain-source voltage: -100V
Drain current: -110A
On-state resistance: 11mΩ
Type of transistor: P-MOSFET
Power dissipation: 270W
Polarisation: unipolar
Kind of package: tube
Gate charge: 400nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Produkt ist nicht verfügbar
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MCC56-12io1B pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4DFEE3B1F8469&compId=MCC56-12IO1B.pdf?ci_sign=3d03519b9644188d274c313de978d4fb29fcc8ed pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCC56-12io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.62V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.62kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+30.93 EUR
10+29.74 EUR
Mindestbestellmenge: 3
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MCC56-12io8B pVersion=0046&contRep=ZT&docId=E1C051B73AFC14F1A6F5005056AB5A8F&compId=MCC56-12IO8B.pdf?ci_sign=a99ae9b9d19a52e182fb55e01a2f29cd6979770c pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCC56-12io8B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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VUO82-16NO7 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB4CC30B9692143&compId=VUO82-16NO7.pdf?ci_sign=45519a3bdfe60d1d3019f70dbc92c5cf93174716
VUO82-16NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+44.47 EUR
Mindestbestellmenge: 2
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VUO82-12NO7 description pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880186BEAA2C0C4&compId=VUO82-12NO7.pdf?ci_sign=58fb59bf82812a1945f3a1b3d25cceaa134485d5
VUO82-12NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+40.6 EUR
10+39.04 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
VUO82-14NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88801E380A29C0C4&compId=VUO82-14NO7.pdf?ci_sign=b8d3c7985f315fe50bc8fb4f10836f8044a49eeb
VUO82-14NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.4kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.53 EUR
Mindestbestellmenge: 2
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VUO82-18NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888023452F31C0C4&compId=VUO82-18NO7.pdf?ci_sign=73b63ee97f3e1ec78f8ec7ed5409494ee7bf5094
VUO82-18NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+46.4 EUR
Mindestbestellmenge: 2
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VUO82-08NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888014EAF25800C4&compId=VUO82-08NO7.pdf?ci_sign=07024e22d6cfbad8bf19881cb6785be310767c03
VUO82-08NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+38.67 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFP4N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D504A4ED455820&compId=IXFA(P)4N100P.pdf?ci_sign=3bc1928e6ac9c7c21646c91f222f882230a1532c
IXFP4N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Power dissipation: 150W
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.5 EUR
18+4.06 EUR
23+3.23 EUR
24+3.06 EUR
Mindestbestellmenge: 16
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MDD44-16N1B pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E06594818A9E28&compId=MDD44-16N1B-DTE.pdf?ci_sign=fbbee8bc1937034edeac589e08187ade38ea8993 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MDD44-16N1B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+27.73 EUR
36+27.17 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
MDD44-18N1B pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E0BD102E6F3E28&compId=MDD44-18N1B-DTE.pdf?ci_sign=90b08c017c93147e8a1824769076869af254c496 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.09 EUR
Mindestbestellmenge: 3
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MDD44-12N1B pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7DFF7A2F9DEDE28&compId=MDD44-12N1B-DTE.pdf?ci_sign=2e2662b5c66fd555f9064e439004627138f29920 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD44-08N1B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82E5F73F94C0C4&compId=MDD44-08N1B.pdf?ci_sign=8ce4774383a16251b4e46bc3cdfd82111886e2fb pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 800V; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD44-14N1B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82FE2F4DCE00C4&compId=MDD44-14N1B.pdf?ci_sign=69ee4c879c4e0a1c879a5920bbcd187ac0713809 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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FBE22-06N1 pVersion=0046&contRep=ZT&docId=005056AB82531EE987F5933B49D018BF&compId=FBE22-06N1.pdf?ci_sign=7ea1713ca283cb8800d681aa2a8c9d4a27a181dc
FBE22-06N1
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 22A
Max. forward impulse current: 50A
Electrical mounting: THT
Case: ISOPLUS i4-pac™ x024a
Kind of package: tube
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.15 EUR
6+12.87 EUR
25+12.54 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FBO40-12N pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F568EC30FF80C4&compId=FBO40-12N.pdf?ci_sign=9895fe3e7ce9361ef90ab2bf718ada817d00a593
FBO40-12N
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1.2kV; If: 40A; Ifsm: 300A; THT
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.3kA
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Case: ISOPLUS i4-pac™ x024a
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.93 EUR
25+17.27 EUR
Mindestbestellmenge: 4
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IXKC23N60C5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC6CB820&compId=IXKC23N60C5.pdf?ci_sign=c1a5b75b3ab726fbed4e498e342a467c0b978d16
IXKC23N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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DSI30-12A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEECF6943966143&compId=DSI30-12A.pdf?ci_sign=f9a445f10c0aa8da27c3439715f2c7bf4e306c19
DSI30-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 0.3kA
Kind of package: tube
Power dissipation: 160W
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.17 EUR
37+1.94 EUR
39+1.84 EUR
Mindestbestellmenge: 23
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MCMA400PD1600PTSF
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 1.6kV
Max. load current: 630A
Load current: 400A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit; screw
Type of semiconductor module: diode-thyristor
Case: SimBus F
Produkt ist nicht verfügbar
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CPC1302G pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AA7859A3521EC&compId=CPC1302.pdf?ci_sign=144bfd2503e02a373942f882ef05b0562a26aa60
CPC1302G
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Case: DIP8
Mounting: THT
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 1000-8000%@1mA
Type of optocoupler: optocoupler
auf Bestellung 346 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.95 EUR
38+1.93 EUR
40+1.82 EUR
Mindestbestellmenge: 25
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CPC1302GSTR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AA7859A3521EC&compId=CPC1302.pdf?ci_sign=144bfd2503e02a373942f882ef05b0562a26aa60
CPC1302GSTR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
Mounting: SMD
Number of channels: 2
Max. off-state voltage: 5V
Turn-on time: 1µs
Turn-off time: 80µs
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 1000-8000%@1mA
Trigger current: 50mA
Slew rate: 0.25V/μs
Type of optocoupler: optocoupler
auf Bestellung 521 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.43 EUR
36+2.02 EUR
38+1.9 EUR
500+1.83 EUR
Mindestbestellmenge: 21
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CPC1302GS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AA7859A3521EC&compId=CPC1302.pdf?ci_sign=144bfd2503e02a373942f882ef05b0562a26aa60
CPC1302GS
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
Mounting: SMD
Number of channels: 2
Max. off-state voltage: 5V
Turn-on time: 1µs
Turn-off time: 80µs
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 1000-8000%@1mA
Trigger current: 50mA
Slew rate: 0.25V/μs
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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