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CPC2017NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8BC20C7&compId=CPC2017N.pdf?ci_sign=f49934d58de835ff3cab1d6c1eb81807697bb69e Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC2014N CPC2014N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8BAC0C7&compId=CPC2014N.pdf?ci_sign=82b978d5f278d65f42d0a0f11d8d469bc4d8f8d3 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance:
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
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CPC2014NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8BAC0C7&compId=CPC2014N.pdf?ci_sign=82b978d5f278d65f42d0a0f11d8d469bc4d8f8d3 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance:
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
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DSI30-12AS-TUB DSI30-12AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD6220BAB21F8BF&compId=DSI30-12AS.pdf?ci_sign=a820b6b43ca6d425507016409b4cfb52adb13ae0 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 255A
Power dissipation: 160W
Type of diode: rectifying
Max. off-state voltage: 1.2kV
auf Bestellung 145 Stücke:
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18+4.1 EUR
31+2.35 EUR
33+2.23 EUR
50+2.22 EUR
100+2.14 EUR
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DSS6-0045AS-TUB DSS6-0045AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAEE6E8F64D8BF&compId=DSS6-0045AS.pdf?ci_sign=6496ce418edfa34f95f12562954ae8ab5281bf7e Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 6A; tube; 50W
Case: DPAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 0.5V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Power dissipation: 50W
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
auf Bestellung 1 Stücke:
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1+71.5 EUR
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DMA30IM1600PZ-TUB DMA30IM1600PZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB44828817100C4&compId=DMA30IM1600PZ.pdf?ci_sign=4c14a69c06510d6b4ac4e711990bb7aba5b75b6b Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; TO263ABHV; Ufmax: 1.26V; 210W
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.26V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 255A
Power dissipation: 210W
Type of diode: rectifying
Max. off-state voltage: 1.6kV
auf Bestellung 76 Stücke:
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26+2.83 EUR
30+2.39 EUR
32+2.25 EUR
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DSEP60-06AT-TUB DSEP60-06AT-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4C0C51653C0C4&compId=DSEP60-06AT.pdf?ci_sign=907c89dca2a36a16f0731151885288c9235296ac Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 60A; 35ns; D3PAK; Ufmax: 1.39V; 330W
Case: D3PAK
Mounting: SMD
Max. forward voltage: 1.39V
Load current: 60A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 0.6kA
Power dissipation: 330W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 0.6kV
auf Bestellung 9 Stücke:
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9+7.95 EUR
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DSP8-08S-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC486122E9CE0C4&compId=DSP8-08S.pdf?ci_sign=636e12e29be954d6ddc49bee670a7a680049d595 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.08V
Load current: 8A
Semiconductor structure: double series
Max. forward impulse current: 120A
Power dissipation: 100W
Type of diode: rectifying
Max. off-state voltage: 0.8kV
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DSP8-12S-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC461397299A0C4&compId=DSP8-12S.pdf?ci_sign=85add253e47cca430fb22b4096dafc8fb18fbc86 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
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DSP8-08AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC47C8E0F62A0C4&compId=DSP8-08AS.pdf?ci_sign=ef8cba494dc4fcd5c0f8d6ec5279b9f89272d752 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.08V
Load current: 8A
Semiconductor structure: double series
Max. forward impulse current: 120A
Power dissipation: 100W
Type of diode: rectifying
Max. off-state voltage: 0.8kV
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DSI30-08AS-TUB DSI30-08AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD5DD0F830478BF&compId=DSI30-08AS.pdf?ci_sign=66d583caf48588f2dd7f8fe07b1cf1927c05f09e Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 255A
Power dissipation: 160W
Type of diode: rectifying
Max. off-state voltage: 0.8kV
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DSP45-12AZ-TUB DSP45-12AZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4D6ED3C2540C4&compId=DSP45-12AZ.pdf?ci_sign=654dc29f15384967032f859f959ab89f35959a24 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 45A; TO268AAHV; Ufmax: 1.23V; 270W
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: double series
Max. forward impulse current: 410A
Power dissipation: 270W
Kind of package: tube
Type of diode: rectifying
Mounting: SMD
Case: TO268AAHV
Max. off-state voltage: 1.2kV
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DSEP12-12BZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4D2BF6B7700C4&compId=DSEP12-12BZ.pdf?ci_sign=37a5b7b3bf0bb902196bac4595f22c404fd8c30f Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 35ns; TO263ABHV; Ufmax: 2.06V
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 2.06V
Load current: 12A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 90A
Power dissipation: 95W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 1.2kV
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DCG20B650LB-TUB IXYS Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; tube
Case: SMPD-B
Kind of package: tube
Max. forward voltage: 2V
Load current: 16A
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Technology: SiC
Type of bridge rectifier: single-phase
Max. off-state voltage: 650V
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DSEI36-06AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4E15ADCFE20C4&compId=DSEI36-06AS.pdf?ci_sign=178acbbb71a13a7e5d20d222e9a73ce916abd3d7 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 37A; 35ns; TO263AB; Ufmax: 1.4V; 125W
Case: TO263AB
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.4V
Load current: 37A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 0.3kA
Power dissipation: 125W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Max. off-state voltage: 0.6kV
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DSI30-16AS-TUB DSI30-16AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD640807D25B8BF&compId=DSI30-16AS.pdf?ci_sign=cfb14604109bfeb6853a2d73a81795d58f27df7d Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 255A
Power dissipation: 160W
Type of diode: rectifying
Max. off-state voltage: 1.6kV
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DSP45-16AZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4E312F984A0C4&compId=DSP45-16AZ.pdf?ci_sign=633e0f4e4af76574e40051b24a279dce7a0641b3 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 45A; TO268AAHV; Ufmax: 1.23V; 270W
Case: TO268AAHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: double series
Max. forward impulse current: 0.48kA
Power dissipation: 270W
Type of diode: rectifying
Max. off-state voltage: 1.6kV
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DSS10-01AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAA62F361878BF&compId=DSS10-01A.pdf?ci_sign=65485104f16a42ee68a438f8eb912f7c50024840 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10A; tube; 90W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Power dissipation: 90W
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. load current: 35A
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DAA10P1800PZ-TUB DAA10P1800PZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA95E1CA471E63A0C4&compId=DAA10P1800PZ.pdf?ci_sign=78e6a587b01b8f3fd46166581c99f9180fc1f1b0 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.53V; 100W
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.53V
Load current: 10A
Semiconductor structure: double series
Max. forward impulse current: 150A
Power dissipation: 100W
Type of diode: rectifying
Features of semiconductor devices: avalanche breakdown effect
Max. off-state voltage: 1.8kV
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DMA90U1800LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87FF96875C80C0C4&compId=DMA90U1800LB.pdf?ci_sign=bcc21b297e8d57d587ae333632f36e7a41cdf83b Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A
Case: SMPD
Max. forward voltage: 1.26V
Load current: 90A
Max. forward impulse current: 350A
Electrical mounting: SMT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Produkt ist nicht verfügbar
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DNA30E2200PZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4707EF53EE0C4&compId=DNA30E2200PZ.pdf?ci_sign=15fe4b8ac3db46205a74e29bc7d07c8d2bc18514 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.24V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 315A
Power dissipation: 210W
Type of diode: rectifying
Features of semiconductor devices: high voltage
Max. off-state voltage: 2.2kV
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DHG40B1200LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAA85AD709500C7&compId=DHG40B1200LB.pdf?ci_sign=da276d7fad27dd53f82445b7254d3b998781370e Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 34A; Ifsm: 150A
Case: SMPD-B
Kind of package: tube
Max. forward voltage: 3.15V
Load current: 34A
Max. forward impulse current: 150A
Electrical mounting: SMT
Technology: Sonic FRD™
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
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CPC3982TTR CPC3982TTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A6583C3D1118BF&compId=CPC3982.pdf?ci_sign=768e2d563e17ec093534afea6845d24c4cb589b3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.15A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 380Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 2851 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
118+0.61 EUR
207+0.35 EUR
219+0.33 EUR
1000+0.31 EUR
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MCO500-18io1 IXYS Littelfuse-Power-Semiconductors-MCO500-18io1-Datasheet?assetguid=C5EC600B-4E10-4189-A5A9-4AC3C3302ADA Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 560A; Y1; Ufmax: 1.27V
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 560A
Case: Y1
Max. forward voltage: 1.27V
Gate current: 300/400mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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MDO500-18N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8398A64E8280C4&compId=MDO500-18N1.pdf?ci_sign=59ed387833176f0677c9962af28f40de8ed0378e Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 560A; Y1-CU; Ufmax: 0.98V
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.8kV
Load current: 560A
Case: Y1-CU
Max. forward voltage: 0.98V
Max. forward impulse current: 15kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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CPC1908J CPC1908J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F1B80C7&compId=CPC1908.pdf?ci_sign=3dbafef0ca837333cdd10aeb40654e4bbb3038eb Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 3500mA; max.60VAC
Case: i4-pac
Mounting: THT
Operating temperature: -40...85°C
Kind of output: MOSFET
Max. operating current: 3.5A
Turn-on time: 20ms
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 100mA
Manufacturer series: OptoMOS
Body dimensions: 19.91x20.88x5.03mm
On-state resistance: 0.3Ω
Turn-off time: 5ms
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
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CPC3902ZTR CPC3902ZTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6DFA5F84F9820&compId=CPC3902.pdf?ci_sign=f60c68197a69999e05253e2148d7740093534ce7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 171 Stücke:
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54+1.33 EUR
81+0.89 EUR
152+0.47 EUR
161+0.44 EUR
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VUO80-16NO1 VUO80-16NO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888049A5497760C4&compId=VUO80-16NO1.pdf?ci_sign=8ee1fc1be7d49b3af7f6deb5f347ea958e0e7cb0 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
auf Bestellung 48 Stücke:
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2+38.67 EUR
24+38.04 EUR
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MMIX1X100N60B3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB80C5D9021820&compId=MMIX1X100N60B3H1.pdf?ci_sign=a305b9fbea8355b2e01a2ac53083c98fe15518df Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 68A; 400W; SMPD
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 400W
Kind of package: tube
Gate charge: 143nC
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 68A
Pulsed collector current: 440A
Turn-on time: 92s
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IXTH16N20D2 IXTH16N20D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D35574B86DF820&compId=IXTH(T)16N20D2.pdf?ci_sign=5ea239bb12406bc8372f9c07c4aea2c2ac1c0344 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 607ns
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 695W
Polarisation: unipolar
Kind of channel: depletion
Drain-source voltage: 200V
Drain current: 16A
Produkt ist nicht verfügbar
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IXTH16N50D2 IXTH16N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 130ns
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 695W
Polarisation: unipolar
Kind of channel: depletion
Drain-source voltage: 500V
Drain current: 16A
Produkt ist nicht verfügbar
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IXTH16P60P IXTH16P60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E619805AB38BF&compId=IXT_16P60P.pdf?ci_sign=0e81182102286b9c0016837af235ac11d15c7957 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 440ns
On-state resistance: 720mΩ
Type of transistor: P-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -600V
Drain current: -16A
Produkt ist nicht verfügbar
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FDA217 FDA217 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Kind of package: tube
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.94 EUR
22+3.37 EUR
23+3.19 EUR
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IXKH47N60C IXKH47N60C IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC739820&compId=IXKH47N60C.pdf?ci_sign=43bb435c43c10b1bc34c0027e601cdcadb46f0c7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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DSA120X200LB-TRR IXYS Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W
Load current: 65A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
Power dissipation: 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. off-state voltage: 200V
Max. forward voltage: 0.67V
Produkt ist nicht verfügbar
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CPC1966YX8 CPC1966YX8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82340C7&compId=CPC1966YX8.pdf?ci_sign=5ac36dc282a63f92d43596d60647d4c843e2c612 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Turn-on time: 20µs
Produkt ist nicht verfügbar
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IXTP3N50D2 IXTP3N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBCC5F1A4EB820&compId=IXTA(P)3N50D2.pdf?ci_sign=1433b6210e8ee4e73eac19dda6d08b4459ecca40 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 24ns
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.86 EUR
20+3.65 EUR
21+3.45 EUR
50+3.3 EUR
Mindestbestellmenge: 15
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IXTY3N50P IXTY3N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO252
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 70W
Gate charge: 9.3nC
Technology: Polar™
Reverse recovery time: 400ns
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
104+0.69 EUR
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IXTA3N50P IXTA3N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO263
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 70W
Gate charge: 9.3nC
Technology: Polar™
Reverse recovery time: 400ns
auf Bestellung 10 Stücke:
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10+7.15 EUR
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IXTA3N50D2 IXTA3N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBCC5F1A4EB820&compId=IXTA(P)3N50D2.pdf?ci_sign=1433b6210e8ee4e73eac19dda6d08b4459ecca40 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO263
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Power dissipation: 125W
Gate charge: 1.07µC
Reverse recovery time: 24ns
Produkt ist nicht verfügbar
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IXDF602PI IXDF602PI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 93ns
Turn-on time: 93ns
Kind of output: inverting; non-inverting
auf Bestellung 1053 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.29 EUR
52+1.4 EUR
68+1.06 EUR
72+1 EUR
100+0.97 EUR
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IXDI602PI IXDI602PI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 93ns
Turn-on time: 93ns
Kind of output: inverting
auf Bestellung 977 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.73 EUR
43+1.67 EUR
70+1.03 EUR
74+0.97 EUR
500+0.93 EUR
Mindestbestellmenge: 27
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IXTN32P60P IXTN32P60P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE797949C94D6AA0748&compId=IXTN32P60P.pdf?ci_sign=035c5f108d26aae1df24efb3d52a2cd107ac837f Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Case: SOT227B
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: -96A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Power dissipation: 890W
Produkt ist nicht verfügbar
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PLA172P PLA172P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC6FA0C7&compId=PLA172P.pdf?ci_sign=0dbbf0b9b59386dee07fd42b26cc2ab02a1703a1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Mounting: SMT
Operating temperature: -40...105°C
Kind of output: MOSFET
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 800V AC; max. 800V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 50Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.59mm
Insulation voltage: 5kV
Produkt ist nicht verfügbar
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PLA172PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC6FA0C7&compId=PLA172P.pdf?ci_sign=0dbbf0b9b59386dee07fd42b26cc2ab02a1703a1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Mounting: SMT
Operating temperature: -40...105°C
Kind of output: MOSFET
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 800V AC; max. 800V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 50Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.59mm
Insulation voltage: 5kV
Produkt ist nicht verfügbar
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IXFR40N90P IXFR40N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C7F820&compId=IXFR40N90P.pdf?ci_sign=dc315346ddb98b058b9e3318608cbac74407300d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 230nC
Kind of channel: enhancement
Drain-source voltage: 900V
Drain current: 21A
On-state resistance: 0.25Ω
Produkt ist nicht verfügbar
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MIXA225PF1200TSF IXYS MIXA225PF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Application: fans; for pump; for UPS; motors
Power dissipation: 1.1kW
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Produkt ist nicht verfügbar
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MIXA225RF1200TSF IXYS MIXA225RF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: boost chopper; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Produkt ist nicht verfügbar
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MDNA425P2200PTSF IXYS Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 2.2kV
Load current: 425A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
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MDNA600P2200PTSF IXYS Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Max. off-state voltage: 2.2kV
Load current: 600A
Semiconductor structure: double series
Max. forward impulse current: 15kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
Produkt ist nicht verfügbar
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MDNA300P2200PTSF IXYS Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Max. off-state voltage: 2.2kV
Load current: 300A
Semiconductor structure: double series
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
Produkt ist nicht verfügbar
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MIXA300PF1200TSF IXYS MIXA300PF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 325A
Pulsed collector current: 650A
Application: fans; for pump; for UPS; motors
Power dissipation: 1.5kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Produkt ist nicht verfügbar
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MIXG490PF1200TSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Produkt ist nicht verfügbar
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MIXA450PF1200TSF IXYS MIXA450PF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Application: fans; for pump; for UPS; motors
Power dissipation: 2.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Produkt ist nicht verfügbar
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MIXG490PF1200PTSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Produkt ist nicht verfügbar
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IX9907NTR IX9907NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E7AAE9A4C80C4&compId=IX9907.pdf?ci_sign=1c528a18bc3dd6c5a1da43fa7fa252678bebf06f Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
Produkt ist nicht verfügbar
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DSEE30-12A DSEE30-12A IXYS DSEE30-12A.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.5V
Load current: 30A
Semiconductor structure: double series
Reverse recovery time: 30ns
Max. forward impulse current: 200A
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
4+20.02 EUR
10+19.25 EUR
Mindestbestellmenge: 4
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FUE30-12N1 FUE30-12N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE987F56DD7F90498BF&compId=FUE30-12N1.pdf?ci_sign=17999c248a3339e7beb8cafdfeb675816333a55a Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 90A; THT
Max. forward impulse current: 90A
Electrical mounting: THT
Type of bridge rectifier: three-phase
Case: ISOPLUS i4-pac™ x024a
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.37V
Load current: 30A
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IXGX100N170 IXGX100N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0A6DAFB799820&compId=IXGK(X)100N170.pdf?ci_sign=c8053da6d72a2c79586ce8a850d84b1d66a7da31 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 285ns
Turn-off time: 720ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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LDA102STR LDA102STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB0BE0ABDC1EC&compId=LDA102.pdf?ci_sign=e209e23a920edbbe96409710a7313a9fe8672080 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 50mA
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 1
auf Bestellung 798 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
97+0.74 EUR
125+0.57 EUR
160+0.45 EUR
169+0.42 EUR
500+0.41 EUR
Mindestbestellmenge: 81
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CPC2017NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8BC20C7&compId=CPC2017N.pdf?ci_sign=f49934d58de835ff3cab1d6c1eb81807697bb69e
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC2014N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8BAC0C7&compId=CPC2014N.pdf?ci_sign=82b978d5f278d65f42d0a0f11d8d469bc4d8f8d3
CPC2014N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance:
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC2014NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8BAC0C7&compId=CPC2014N.pdf?ci_sign=82b978d5f278d65f42d0a0f11d8d469bc4d8f8d3
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance:
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSI30-12AS-TUB pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD6220BAB21F8BF&compId=DSI30-12AS.pdf?ci_sign=a820b6b43ca6d425507016409b4cfb52adb13ae0
DSI30-12AS-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 255A
Power dissipation: 160W
Type of diode: rectifying
Max. off-state voltage: 1.2kV
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.1 EUR
31+2.35 EUR
33+2.23 EUR
50+2.22 EUR
100+2.14 EUR
Mindestbestellmenge: 18
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DSS6-0045AS-TUB pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAEE6E8F64D8BF&compId=DSS6-0045AS.pdf?ci_sign=6496ce418edfa34f95f12562954ae8ab5281bf7e
DSS6-0045AS-TUB
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 6A; tube; 50W
Case: DPAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 0.5V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Power dissipation: 50W
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DMA30IM1600PZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB44828817100C4&compId=DMA30IM1600PZ.pdf?ci_sign=4c14a69c06510d6b4ac4e711990bb7aba5b75b6b
DMA30IM1600PZ-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; TO263ABHV; Ufmax: 1.26V; 210W
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.26V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 255A
Power dissipation: 210W
Type of diode: rectifying
Max. off-state voltage: 1.6kV
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.15 EUR
26+2.83 EUR
30+2.39 EUR
32+2.25 EUR
Mindestbestellmenge: 23
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DSEP60-06AT-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4C0C51653C0C4&compId=DSEP60-06AT.pdf?ci_sign=907c89dca2a36a16f0731151885288c9235296ac
DSEP60-06AT-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 60A; 35ns; D3PAK; Ufmax: 1.39V; 330W
Case: D3PAK
Mounting: SMD
Max. forward voltage: 1.39V
Load current: 60A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 0.6kA
Power dissipation: 330W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 0.6kV
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
DSP8-08S-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC486122E9CE0C4&compId=DSP8-08S.pdf?ci_sign=636e12e29be954d6ddc49bee670a7a680049d595
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.08V
Load current: 8A
Semiconductor structure: double series
Max. forward impulse current: 120A
Power dissipation: 100W
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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DSP8-12S-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC461397299A0C4&compId=DSP8-12S.pdf?ci_sign=85add253e47cca430fb22b4096dafc8fb18fbc86
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Produkt ist nicht verfügbar
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DSP8-08AS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC47C8E0F62A0C4&compId=DSP8-08AS.pdf?ci_sign=ef8cba494dc4fcd5c0f8d6ec5279b9f89272d752
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.08V
Load current: 8A
Semiconductor structure: double series
Max. forward impulse current: 120A
Power dissipation: 100W
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSI30-08AS-TUB pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD5DD0F830478BF&compId=DSI30-08AS.pdf?ci_sign=66d583caf48588f2dd7f8fe07b1cf1927c05f09e
DSI30-08AS-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 255A
Power dissipation: 160W
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSP45-12AZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4D6ED3C2540C4&compId=DSP45-12AZ.pdf?ci_sign=654dc29f15384967032f859f959ab89f35959a24
DSP45-12AZ-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 45A; TO268AAHV; Ufmax: 1.23V; 270W
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: double series
Max. forward impulse current: 410A
Power dissipation: 270W
Kind of package: tube
Type of diode: rectifying
Mounting: SMD
Case: TO268AAHV
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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DSEP12-12BZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4D2BF6B7700C4&compId=DSEP12-12BZ.pdf?ci_sign=37a5b7b3bf0bb902196bac4595f22c404fd8c30f
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 35ns; TO263ABHV; Ufmax: 2.06V
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 2.06V
Load current: 12A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 90A
Power dissipation: 95W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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DCG20B650LB-TUB
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; tube
Case: SMPD-B
Kind of package: tube
Max. forward voltage: 2V
Load current: 16A
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Technology: SiC
Type of bridge rectifier: single-phase
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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DSEI36-06AS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4E15ADCFE20C4&compId=DSEI36-06AS.pdf?ci_sign=178acbbb71a13a7e5d20d222e9a73ce916abd3d7
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 37A; 35ns; TO263AB; Ufmax: 1.4V; 125W
Case: TO263AB
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.4V
Load current: 37A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 0.3kA
Power dissipation: 125W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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DSI30-16AS-TUB pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD640807D25B8BF&compId=DSI30-16AS.pdf?ci_sign=cfb14604109bfeb6853a2d73a81795d58f27df7d
DSI30-16AS-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 255A
Power dissipation: 160W
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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DSP45-16AZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4E312F984A0C4&compId=DSP45-16AZ.pdf?ci_sign=633e0f4e4af76574e40051b24a279dce7a0641b3
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 45A; TO268AAHV; Ufmax: 1.23V; 270W
Case: TO268AAHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: double series
Max. forward impulse current: 0.48kA
Power dissipation: 270W
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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DSS10-01AS-TUB pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAA62F361878BF&compId=DSS10-01A.pdf?ci_sign=65485104f16a42ee68a438f8eb912f7c50024840
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10A; tube; 90W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Power dissipation: 90W
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. load current: 35A
Produkt ist nicht verfügbar
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DAA10P1800PZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41EDA95E1CA471E63A0C4&compId=DAA10P1800PZ.pdf?ci_sign=78e6a587b01b8f3fd46166581c99f9180fc1f1b0
DAA10P1800PZ-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.53V; 100W
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.53V
Load current: 10A
Semiconductor structure: double series
Max. forward impulse current: 150A
Power dissipation: 100W
Type of diode: rectifying
Features of semiconductor devices: avalanche breakdown effect
Max. off-state voltage: 1.8kV
Produkt ist nicht verfügbar
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DMA90U1800LB-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87FF96875C80C0C4&compId=DMA90U1800LB.pdf?ci_sign=bcc21b297e8d57d587ae333632f36e7a41cdf83b
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A
Case: SMPD
Max. forward voltage: 1.26V
Load current: 90A
Max. forward impulse current: 350A
Electrical mounting: SMT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Produkt ist nicht verfügbar
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DNA30E2200PZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4707EF53EE0C4&compId=DNA30E2200PZ.pdf?ci_sign=15fe4b8ac3db46205a74e29bc7d07c8d2bc18514
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.24V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 315A
Power dissipation: 210W
Type of diode: rectifying
Features of semiconductor devices: high voltage
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
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DHG40B1200LB-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAA85AD709500C7&compId=DHG40B1200LB.pdf?ci_sign=da276d7fad27dd53f82445b7254d3b998781370e
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 34A; Ifsm: 150A
Case: SMPD-B
Kind of package: tube
Max. forward voltage: 3.15V
Load current: 34A
Max. forward impulse current: 150A
Electrical mounting: SMT
Technology: Sonic FRD™
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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CPC3982TTR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A6583C3D1118BF&compId=CPC3982.pdf?ci_sign=768e2d563e17ec093534afea6845d24c4cb589b3
CPC3982TTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.15A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 380Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 2851 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
118+0.61 EUR
207+0.35 EUR
219+0.33 EUR
1000+0.31 EUR
Mindestbestellmenge: 103
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MCO500-18io1 Littelfuse-Power-Semiconductors-MCO500-18io1-Datasheet?assetguid=C5EC600B-4E10-4189-A5A9-4AC3C3302ADA
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 560A; Y1; Ufmax: 1.27V
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 560A
Case: Y1
Max. forward voltage: 1.27V
Gate current: 300/400mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Produkt ist nicht verfügbar
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MDO500-18N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8398A64E8280C4&compId=MDO500-18N1.pdf?ci_sign=59ed387833176f0677c9962af28f40de8ed0378e
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 560A; Y1-CU; Ufmax: 0.98V
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.8kV
Load current: 560A
Case: Y1-CU
Max. forward voltage: 0.98V
Max. forward impulse current: 15kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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CPC1908J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F1B80C7&compId=CPC1908.pdf?ci_sign=3dbafef0ca837333cdd10aeb40654e4bbb3038eb
CPC1908J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 3500mA; max.60VAC
Case: i4-pac
Mounting: THT
Operating temperature: -40...85°C
Kind of output: MOSFET
Max. operating current: 3.5A
Turn-on time: 20ms
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 100mA
Manufacturer series: OptoMOS
Body dimensions: 19.91x20.88x5.03mm
On-state resistance: 0.3Ω
Turn-off time: 5ms
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
Produkt ist nicht verfügbar
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CPC3902ZTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6DFA5F84F9820&compId=CPC3902.pdf?ci_sign=f60c68197a69999e05253e2148d7740093534ce7
CPC3902ZTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
81+0.89 EUR
152+0.47 EUR
161+0.44 EUR
Mindestbestellmenge: 54
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VUO80-16NO1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888049A5497760C4&compId=VUO80-16NO1.pdf?ci_sign=8ee1fc1be7d49b3af7f6deb5f347ea958e0e7cb0
VUO80-16NO1
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+38.67 EUR
24+38.04 EUR
Mindestbestellmenge: 2
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MMIX1X100N60B3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB80C5D9021820&compId=MMIX1X100N60B3H1.pdf?ci_sign=a305b9fbea8355b2e01a2ac53083c98fe15518df
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 68A; 400W; SMPD
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 400W
Kind of package: tube
Gate charge: 143nC
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 68A
Pulsed collector current: 440A
Turn-on time: 92s
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH16N20D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D35574B86DF820&compId=IXTH(T)16N20D2.pdf?ci_sign=5ea239bb12406bc8372f9c07c4aea2c2ac1c0344
IXTH16N20D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 607ns
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 695W
Polarisation: unipolar
Kind of channel: depletion
Drain-source voltage: 200V
Drain current: 16A
Produkt ist nicht verfügbar
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IXTH16N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005
IXTH16N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 130ns
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 695W
Polarisation: unipolar
Kind of channel: depletion
Drain-source voltage: 500V
Drain current: 16A
Produkt ist nicht verfügbar
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IXTH16P60P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E619805AB38BF&compId=IXT_16P60P.pdf?ci_sign=0e81182102286b9c0016837af235ac11d15c7957
IXTH16P60P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 440ns
On-state resistance: 720mΩ
Type of transistor: P-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -600V
Drain current: -16A
Produkt ist nicht verfügbar
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FDA217 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b
FDA217
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Kind of package: tube
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.94 EUR
22+3.37 EUR
23+3.19 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXKH47N60C pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC739820&compId=IXKH47N60C.pdf?ci_sign=43bb435c43c10b1bc34c0027e601cdcadb46f0c7
IXKH47N60C
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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DSA120X200LB-TRR
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W
Load current: 65A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
Power dissipation: 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. off-state voltage: 200V
Max. forward voltage: 0.67V
Produkt ist nicht verfügbar
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CPC1966YX8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82340C7&compId=CPC1966YX8.pdf?ci_sign=5ac36dc282a63f92d43596d60647d4c843e2c612
CPC1966YX8
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Turn-on time: 20µs
Produkt ist nicht verfügbar
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IXTP3N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBCC5F1A4EB820&compId=IXTA(P)3N50D2.pdf?ci_sign=1433b6210e8ee4e73eac19dda6d08b4459ecca40
IXTP3N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 24ns
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.86 EUR
20+3.65 EUR
21+3.45 EUR
50+3.3 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IXTY3N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4
IXTY3N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO252
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 70W
Gate charge: 9.3nC
Technology: Polar™
Reverse recovery time: 400ns
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
104+0.69 EUR
Mindestbestellmenge: 104
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IXTA3N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4
IXTA3N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO263
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 70W
Gate charge: 9.3nC
Technology: Polar™
Reverse recovery time: 400ns
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
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IXTA3N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBCC5F1A4EB820&compId=IXTA(P)3N50D2.pdf?ci_sign=1433b6210e8ee4e73eac19dda6d08b4459ecca40
IXTA3N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO263
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Power dissipation: 125W
Gate charge: 1.07µC
Reverse recovery time: 24ns
Produkt ist nicht verfügbar
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IXDF602PI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDF602PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 93ns
Turn-on time: 93ns
Kind of output: inverting; non-inverting
auf Bestellung 1053 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.29 EUR
52+1.4 EUR
68+1.06 EUR
72+1 EUR
100+0.97 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IXDI602PI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDI602PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 93ns
Turn-on time: 93ns
Kind of output: inverting
auf Bestellung 977 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.73 EUR
43+1.67 EUR
70+1.03 EUR
74+0.97 EUR
500+0.93 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IXTN32P60P pVersion=0046&contRep=ZT&docId=005056AB752F1EE797949C94D6AA0748&compId=IXTN32P60P.pdf?ci_sign=035c5f108d26aae1df24efb3d52a2cd107ac837f
IXTN32P60P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Case: SOT227B
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: -96A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Power dissipation: 890W
Produkt ist nicht verfügbar
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PLA172P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC6FA0C7&compId=PLA172P.pdf?ci_sign=0dbbf0b9b59386dee07fd42b26cc2ab02a1703a1
PLA172P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Mounting: SMT
Operating temperature: -40...105°C
Kind of output: MOSFET
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 800V AC; max. 800V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 50Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.59mm
Insulation voltage: 5kV
Produkt ist nicht verfügbar
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PLA172PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC6FA0C7&compId=PLA172P.pdf?ci_sign=0dbbf0b9b59386dee07fd42b26cc2ab02a1703a1
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Mounting: SMT
Operating temperature: -40...105°C
Kind of output: MOSFET
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 800V AC; max. 800V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 50Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.59mm
Insulation voltage: 5kV
Produkt ist nicht verfügbar
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IXFR40N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C7F820&compId=IXFR40N90P.pdf?ci_sign=dc315346ddb98b058b9e3318608cbac74407300d
IXFR40N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 230nC
Kind of channel: enhancement
Drain-source voltage: 900V
Drain current: 21A
On-state resistance: 0.25Ω
Produkt ist nicht verfügbar
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MIXA225PF1200TSF MIXA225PF1200TSF.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Application: fans; for pump; for UPS; motors
Power dissipation: 1.1kW
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Produkt ist nicht verfügbar
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MIXA225RF1200TSF MIXA225RF1200TSF.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: boost chopper; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Produkt ist nicht verfügbar
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MDNA425P2200PTSF
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 2.2kV
Load current: 425A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
Produkt ist nicht verfügbar
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MDNA600P2200PTSF
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Max. off-state voltage: 2.2kV
Load current: 600A
Semiconductor structure: double series
Max. forward impulse current: 15kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
Produkt ist nicht verfügbar
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MDNA300P2200PTSF
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Max. off-state voltage: 2.2kV
Load current: 300A
Semiconductor structure: double series
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
Produkt ist nicht verfügbar
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MIXA300PF1200TSF MIXA300PF1200TSF.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 325A
Pulsed collector current: 650A
Application: fans; for pump; for UPS; motors
Power dissipation: 1.5kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Produkt ist nicht verfügbar
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MIXG490PF1200TSF
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Produkt ist nicht verfügbar
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MIXA450PF1200TSF MIXA450PF1200TSF.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Application: fans; for pump; for UPS; motors
Power dissipation: 2.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Produkt ist nicht verfügbar
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MIXG490PF1200PTSF
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
Produkt ist nicht verfügbar
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IX9907NTR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E7AAE9A4C80C4&compId=IX9907.pdf?ci_sign=1c528a18bc3dd6c5a1da43fa7fa252678bebf06f
IX9907NTR
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
Produkt ist nicht verfügbar
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DSEE30-12A DSEE30-12A.PDF
DSEE30-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.5V
Load current: 30A
Semiconductor structure: double series
Reverse recovery time: 30ns
Max. forward impulse current: 200A
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.02 EUR
10+19.25 EUR
Mindestbestellmenge: 4
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FUE30-12N1 pVersion=0046&contRep=ZT&docId=005056AB82531EE987F56DD7F90498BF&compId=FUE30-12N1.pdf?ci_sign=17999c248a3339e7beb8cafdfeb675816333a55a
FUE30-12N1
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 90A; THT
Max. forward impulse current: 90A
Electrical mounting: THT
Type of bridge rectifier: three-phase
Case: ISOPLUS i4-pac™ x024a
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.37V
Load current: 30A
Produkt ist nicht verfügbar
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IXGX100N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0A6DAFB799820&compId=IXGK(X)100N170.pdf?ci_sign=c8053da6d72a2c79586ce8a850d84b1d66a7da31
IXGX100N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 285ns
Turn-off time: 720ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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LDA102STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB0BE0ABDC1EC&compId=LDA102.pdf?ci_sign=e209e23a920edbbe96409710a7313a9fe8672080
LDA102STR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 50mA
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 1
auf Bestellung 798 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
97+0.74 EUR
125+0.57 EUR
160+0.45 EUR
169+0.42 EUR
500+0.41 EUR
Mindestbestellmenge: 81
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