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IXFX240N15T2 IXFX240N15T2 IXYS IXFK(X)240N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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MMJX1H40N150 IXYS MMJX1H40N150.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 15.5kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 15.5kA
Features of semiconductor devices: Kelvin terminal; MOS-gated thyristor (MGT)
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IXTA110N055T2 IXTA110N055T2 IXYS IXTA(P)110N055T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
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MCD162-16io1B IXYS PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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DSEI2X31-10B DSEI2X31-10B IXYS DSEI2x30-10B_DSEI2x31-10B.pdf Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 30A x2
Max. forward impulse current: 200A
Case: SOT227B
Electrical mounting: screw
Max. forward voltage: 2V
Semiconductor structure: double independent
Mechanical mounting: screw
Type of module: diode
auf Bestellung 96 Stücke:
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DSEI2X30-10B DSEI2X30-10B IXYS DSEI2x30-10B_DSEI2x31-10B.pdf Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 30A x2
Max. forward impulse current: 200A
Case: SOT227B
Electrical mounting: screw
Max. forward voltage: 2V
Semiconductor structure: double independent
Mechanical mounting: screw
Type of module: diode
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MCC95-18io1B MCC95-18io1B IXYS MCC95-18IO1B-DTE.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXTT360N055T2 IXTT360N055T2 IXYS IXTH(T)360N055T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO268
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 78ns
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DPF10I600APA DPF10I600APA IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; TO220AC
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
auf Bestellung 74 Stücke:
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49+1.47 EUR
55+1.30 EUR
61+1.19 EUR
65+1.12 EUR
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FMD15-06KC5 IXYS FMD15-06KC5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 15A
Semiconductor structure: diode/transistor
Topology: boost chopper
Case: ISOPLUS i4-pac™ x024a
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: super junction coolmos
Gate charge: 40nC
Technology: HiPerDynFRED
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Drain-source voltage: 600V
Drain current: 15A
On-state resistance: 0.165Ω
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IXTA50N20P IXTA50N20P IXYS IXTA50N20P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Mounting: SMD
Case: TO263
Reverse recovery time: 150ns
Drain-source voltage: 200V
Drain current: 50A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 360W
Polarisation: unipolar
Kind of package: tube
Gate charge: 70nC
Technology: PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
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IXTA50N25T IXTA50N25T IXYS IXTA(H,P,Q)50N25T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Mounting: SMD
Case: TO263
Reverse recovery time: 166ns
Drain-source voltage: 250V
Drain current: 50A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 78nC
Kind of channel: enhancement
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CMA30E1600PN CMA30E1600PN IXYS CMA30E1600PN.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 36A; 23A; Igt: 28/50mA; TO220FP; THT; tube
Max. off-state voltage: 1.6kV
Max. load current: 36A
Load current: 23A
Gate current: 28/50mA
Max. forward impulse current: 220A
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: TO220FP
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CMA80E1600HB IXYS CMA80E1600HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 126A; 80A; Igt: 200mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 126A
Load current: 80A
Gate current: 200mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 780A
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CMA50E1600HB IXYS CMA50E1600HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 79A
Load current: 50A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 595A
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CMA40E1600HR IXYS CMA40E1600HR.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 63A
Load current: 40A
Gate current: 50/80mA
Case: ISO247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 470A
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DSEK60-06A DSEK60-06A IXYS DSEK60-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 300A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-3
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 258 Stücke:
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9+8.78 EUR
11+6.85 EUR
12+6.48 EUR
120+6.23 EUR
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MMIX1Y100N120C3H1 IXYS MMIX1Y100N120C3H1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 40A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Mounting: SMD
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 265ns
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IXTK20N150 IXTK20N150 IXYS IXTK(X)20N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Mounting: THT
Case: TO264
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhancement
Reverse recovery time: 1.1µs
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
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IXTX20N150 IXTX20N150 IXYS IXTK(X)20N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us
Mounting: THT
Case: PLUS247™
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhancement
Reverse recovery time: 1.1µs
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
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CS30-16IO1 CS30-16IO1 IXYS CS30-12IO1-DTE.pdf description Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Max. off-state voltage: 1.6kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of thyristor: thyristor
Case: TO247AD
auf Bestellung 269 Stücke:
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9+7.95 EUR
14+5.41 EUR
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CS30-14IO1 CS30-14IO1 IXYS CS30-12IO1-DTE.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Max. off-state voltage: 1.4kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of thyristor: thyristor
Case: TO247AD
auf Bestellung 257 Stücke:
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9+8.15 EUR
15+4.89 EUR
16+4.63 EUR
120+4.45 EUR
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CLF20E1200PB CLF20E1200PB IXYS CLF20E1200PB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 55mA; TO220AB; THT; tube
Mounting: THT
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 55mA
Max. forward impulse current: 175A
Kind of package: tube
Type of thyristor: thyristor
Case: TO220AB
auf Bestellung 71 Stücke:
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16+4.73 EUR
26+2.76 EUR
28+2.60 EUR
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GUO40-16NO1 GUO40-16NO1 IXYS GUO40-16NO1.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.06V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
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DSEP30-12AR DSEP30-12AR IXYS DSEP30-12AR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: ISOPLUS247™
Max. forward voltage: 1.79V
Max. forward impulse current: 200A
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Reverse recovery time: 40ns
Power dissipation: 135W
auf Bestellung 298 Stücke:
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DPG30I300HA DPG30I300HA IXYS media?resourcetype=datasheets&itemid=63779446-FB19-46A8-98FA-0405CBC10C47&filename=Littelfuse-Power-Semiconductors-DPG30I300HA-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 360A; TO247-2; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 160W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 256 Stücke:
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16+4.62 EUR
18+4.16 EUR
22+3.32 EUR
23+3.13 EUR
120+3.09 EUR
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DPF60C200HJ DPF60C200HJ IXYS DPF60C200HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: ISOPLUS247™
Max. forward voltage: 0.88V
Max. forward impulse current: 560A
Kind of package: tube
Reverse recovery time: 35ns
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 38 Stücke:
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14+5.13 EUR
16+4.62 EUR
19+3.88 EUR
20+3.68 EUR
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DPF60C300HB DPF60C300HB IXYS DPF60C300HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.97V
Max. forward impulse current: 0.4kA
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
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8+9.98 EUR
10+7.16 EUR
11+6.76 EUR
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DPG30I300PA DPG30I300PA IXYS media?resourcetype=datasheets&itemid=3E2778AE-8266-4D7A-8063-2CEE495544CC&filename=Littelfuse-Power-Semiconductors-DPG30I300PA-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 360A; TO220AC; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.35V
Max. forward impulse current: 360A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 175W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
auf Bestellung 326 Stücke:
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18+4.16 EUR
30+2.39 EUR
31+2.35 EUR
32+2.26 EUR
50+2.17 EUR
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DPF30I300PA DPF30I300PA IXYS DPF30I300PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 390A; TO220AC; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.17V
Max. forward impulse current: 390A
Kind of package: tube
Reverse recovery time: 55ns
Power dissipation: 175W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
auf Bestellung 79 Stücke:
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16+4.68 EUR
17+4.23 EUR
21+3.43 EUR
23+3.25 EUR
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DPF60C200HB DPF60C200HB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 400A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.91V
Max. forward impulse current: 0.4kA
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
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1+71.50 EUR
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IXTH24N65X2 IXTH24N65X2 IXYS IXT_24N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 390ns
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IXFA34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa34n65x3-datasheet?assetguid=7bd01bfc-f3d8-4755-8e6c-5e250cb5176f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 150ns
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IXFH34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet?assetguid=965e45cd-8715-4cf1-b85d-adaafdfc5ec2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 150ns
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IXTT34N65X2HV IXTT34N65X2HV IXYS IXTT34N65X2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 54nC
Produkt ist nicht verfügbar
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PLA192 PLA192 IXYS PLA192.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
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PLA192S PLA192S IXYS PLA192.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
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PLA192E PLA192E IXYS PLA192.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
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PLA192STR IXYS PLA192.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
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OMA160S OMA160S IXYS OMA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
On-state resistance: 100Ω
Turn-on time: 125µs
Turn-off time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Max. operating current: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Operating temperature: -40...85°C
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OMA160STR IXYS OMA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
On-state resistance: 100Ω
Turn-on time: 125µs
Turn-off time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Max. operating current: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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VGO36-16IO7 VGO36-16IO7 IXYS VGO36-16io7.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 36A; THT
Electrical mounting: THT
Leads: wire Ø 0.75mm
Max. off-state voltage: 1.6kV
Load current: 36A
Gate current: 65mA
Max. forward impulse current: 280A
Mechanical mounting: screw
Version: module
Type of bridge rectifier: half-controlled
Case: ECO-PAC 1
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MCC26-16io1B MCC26-16io1B IXYS MCC26-16io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.27V
Electrical mounting: screw
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.27V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 520A
Kind of package: bulk
Mechanical mounting: screw
Type of module: thyristor
Case: TO240AA
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MDD26-16N1B MDD26-16N1B IXYS MDD26-16N1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 36A; TO240AA; Ufmax: 1.05V
Electrical mounting: screw
Max. off-state voltage: 1.6kV
Max. load current: 60A
Max. forward voltage: 1.05V
Load current: 36A
Semiconductor structure: double series
Max. forward impulse current: 555A
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
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IXTK200N10L2 IXTK200N10L2 IXYS IXT_200N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 200A; 1040W
Mounting: THT
Reverse recovery time: 245ns
Drain-source voltage: 100V
Drain current: 200A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 540nC
Technology: Linear L2™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO264
Produkt ist nicht verfügbar
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DSSS35-008AR DSSS35-008AR IXYS DSSS35-008AR.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 35Ax2; ISOPLUS247™; 190W
Type of diode: Schottky rectifying
Case: ISOPLUS247™
Mounting: THT
Max. off-state voltage: 80V
Load current: 35A x2
Semiconductor structure: double series
Max. forward voltage: 0.68V
Max. forward impulse current: 0.6kA
Kind of package: tube
Power dissipation: 190W
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LAA710 LAA710 IXYS LAA710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
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LAA710S LAA710S IXYS LAA710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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LAA710STR IXYS LAA710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXTH20P50P IXTH20P50P IXYS IXT_20P50P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -20A; 460W; TO247-3
Case: TO247-3
Reverse recovery time: 406ns
Drain-source voltage: -500V
Drain current: -20A
On-state resistance: 0.45Ω
Type of transistor: P-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Kind of package: tube
Gate charge: 103nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
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LOC110 LOC110 IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; THT; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: photodiode
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LOC110S LOC110S IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: photodiode; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Insulation voltage: 3.75kV
Kind of output: photodiode
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LOC110P LOC110P IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
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LOC110PTR IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
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LOC110STR LOC110STR IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
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CPC2907B CPC2907B IXYS CPC2907B.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Operating temperature: -40...85°C
Case: PowerSO8
On-state resistance: 0.15Ω
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Body dimensions: 21.08x10.16x3.3mm
Kind of output: MOSFET
Insulation voltage: 4kV
Contacts configuration: SPST-NO x2
Max. operating current: 2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
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IXFR44N80P IXFR44N80P IXYS IXFR44N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MG12300D-BN2MM IXYS media?resourcetype=datasheets&itemid=96b0faab-d906-413a-8e95-40022164d554&filename=littelfuse_power_semiconductor_igbt_module_mg12300d_bn2mm_datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Technology: Field Stop; Trench
Produkt ist nicht verfügbar
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MIXA600PF650TSF IXYS MIXA600PF650TSF.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 490A
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Case: SimBus F
Application: fans; for pump; for UPS; motors
Power dissipation: 1.75kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Gate-emitter voltage: ±20V
Collector current: 490A
Pulsed collector current: 1.2kA
Produkt ist nicht verfügbar
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IXFT42N50P2 IXFT42N50P2 IXYS IXFH(T)42N50P2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO268
Drain current: 42A
On-state resistance: 0.145Ω
Type of transistor: N-MOSFET
Power dissipation: 830W
Case: TO268
Kind of package: tube
Gate charge: 92nC
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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IXFX240N15T2 IXFK(X)240N15T2.pdf
IXFX240N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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MMJX1H40N150 MMJX1H40N150.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 15.5kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 15.5kA
Features of semiconductor devices: Kelvin terminal; MOS-gated thyristor (MGT)
Produkt ist nicht verfügbar
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IXTA110N055T2 IXTA(P)110N055T2.pdf
IXTA110N055T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
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MCD162-16io1B PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DSEI2X31-10B DSEI2x30-10B_DSEI2x31-10B.pdf
DSEI2X31-10B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 30A x2
Max. forward impulse current: 200A
Case: SOT227B
Electrical mounting: screw
Max. forward voltage: 2V
Semiconductor structure: double independent
Mechanical mounting: screw
Type of module: diode
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3+27.47 EUR
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DSEI2X30-10B DSEI2x30-10B_DSEI2x31-10B.pdf
DSEI2X30-10B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 30A x2
Max. forward impulse current: 200A
Case: SOT227B
Electrical mounting: screw
Max. forward voltage: 2V
Semiconductor structure: double independent
Mechanical mounting: screw
Type of module: diode
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3+27.07 EUR
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MCC95-18io1B MCC95-18IO1B-DTE.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC95-18io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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2+46.49 EUR
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IXTT360N055T2 IXTH(T)360N055T2.pdf
IXTT360N055T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO268
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 78ns
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DPF10I600APA
DPF10I600APA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; TO220AC
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
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44+1.66 EUR
49+1.47 EUR
55+1.30 EUR
61+1.19 EUR
65+1.12 EUR
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FMD15-06KC5 FMD15-06KC5.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 15A
Semiconductor structure: diode/transistor
Topology: boost chopper
Case: ISOPLUS i4-pac™ x024a
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: super junction coolmos
Gate charge: 40nC
Technology: HiPerDynFRED
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Drain-source voltage: 600V
Drain current: 15A
On-state resistance: 0.165Ω
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.66 EUR
Mindestbestellmenge: 5
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IXTA50N20P IXTA50N20P-DTE.pdf
IXTA50N20P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Mounting: SMD
Case: TO263
Reverse recovery time: 150ns
Drain-source voltage: 200V
Drain current: 50A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 360W
Polarisation: unipolar
Kind of package: tube
Gate charge: 70nC
Technology: PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IXTA50N25T IXTA(H,P,Q)50N25T.pdf
IXTA50N25T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Mounting: SMD
Case: TO263
Reverse recovery time: 166ns
Drain-source voltage: 250V
Drain current: 50A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 78nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CMA30E1600PN CMA30E1600PN.pdf
CMA30E1600PN
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 36A; 23A; Igt: 28/50mA; TO220FP; THT; tube
Max. off-state voltage: 1.6kV
Max. load current: 36A
Load current: 23A
Gate current: 28/50mA
Max. forward impulse current: 220A
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: TO220FP
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.22 EUR
27+2.66 EUR
29+2.52 EUR
100+2.49 EUR
Mindestbestellmenge: 14
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CMA80E1600HB CMA80E1600HB.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 126A; 80A; Igt: 200mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 126A
Load current: 80A
Gate current: 200mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 780A
Produkt ist nicht verfügbar
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CMA50E1600HB CMA50E1600HB.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 79A
Load current: 50A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 595A
Produkt ist nicht verfügbar
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CMA40E1600HR CMA40E1600HR.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 63A
Load current: 40A
Gate current: 50/80mA
Case: ISO247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 470A
Produkt ist nicht verfügbar
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DSEK60-06A DSEK60-06A.pdf
DSEK60-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 300A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-3
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.78 EUR
11+6.85 EUR
12+6.48 EUR
120+6.23 EUR
Mindestbestellmenge: 9
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MMIX1Y100N120C3H1 MMIX1Y100N120C3H1.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 40A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Mounting: SMD
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 265ns
Produkt ist nicht verfügbar
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IXTK20N150 IXTK(X)20N150.pdf
IXTK20N150
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Mounting: THT
Case: TO264
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhancement
Reverse recovery time: 1.1µs
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXTX20N150 IXTK(X)20N150.pdf
IXTX20N150
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us
Mounting: THT
Case: PLUS247™
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhancement
Reverse recovery time: 1.1µs
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Produkt ist nicht verfügbar
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CS30-16IO1 description CS30-12IO1-DTE.pdf
CS30-16IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Max. off-state voltage: 1.6kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of thyristor: thyristor
Case: TO247AD
auf Bestellung 269 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
14+5.41 EUR
15+5.11 EUR
Mindestbestellmenge: 9
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CS30-14IO1 CS30-12IO1-DTE.pdf
CS30-14IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Max. off-state voltage: 1.4kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of thyristor: thyristor
Case: TO247AD
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.15 EUR
15+4.89 EUR
16+4.63 EUR
120+4.45 EUR
Mindestbestellmenge: 9
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CLF20E1200PB CLF20E1200PB.pdf
CLF20E1200PB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 55mA; TO220AB; THT; tube
Mounting: THT
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 55mA
Max. forward impulse current: 175A
Kind of package: tube
Type of thyristor: thyristor
Case: TO220AB
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.73 EUR
26+2.76 EUR
28+2.60 EUR
Mindestbestellmenge: 16
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GUO40-16NO1 GUO40-16NO1.pdf
GUO40-16NO1
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.06V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.61 EUR
14+20.78 EUR
Mindestbestellmenge: 4
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DSEP30-12AR DSEP30-12AR.pdf
DSEP30-12AR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: ISOPLUS247™
Max. forward voltage: 1.79V
Max. forward impulse current: 200A
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Reverse recovery time: 40ns
Power dissipation: 135W
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.21 EUR
11+6.59 EUR
120+6.48 EUR
Mindestbestellmenge: 8
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DPG30I300HA media?resourcetype=datasheets&itemid=63779446-FB19-46A8-98FA-0405CBC10C47&filename=Littelfuse-Power-Semiconductors-DPG30I300HA-Datasheet
DPG30I300HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 360A; TO247-2; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 160W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 256 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.62 EUR
18+4.16 EUR
22+3.32 EUR
23+3.13 EUR
120+3.09 EUR
Mindestbestellmenge: 16
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DPF60C200HJ DPF60C200HB.pdf
DPF60C200HJ
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: ISOPLUS247™
Max. forward voltage: 0.88V
Max. forward impulse current: 560A
Kind of package: tube
Reverse recovery time: 35ns
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.13 EUR
16+4.62 EUR
19+3.88 EUR
20+3.68 EUR
Mindestbestellmenge: 14
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DPF60C300HB DPF60C300HB.pdf
DPF60C300HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.97V
Max. forward impulse current: 0.4kA
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.98 EUR
10+7.16 EUR
11+6.76 EUR
Mindestbestellmenge: 8
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DPG30I300PA media?resourcetype=datasheets&itemid=3E2778AE-8266-4D7A-8063-2CEE495544CC&filename=Littelfuse-Power-Semiconductors-DPG30I300PA-Datasheet
DPG30I300PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 360A; TO220AC; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.35V
Max. forward impulse current: 360A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 175W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
auf Bestellung 326 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.16 EUR
30+2.39 EUR
31+2.35 EUR
32+2.26 EUR
50+2.17 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
DPF30I300PA DPF30I300PA.pdf
DPF30I300PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 390A; TO220AC; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.17V
Max. forward impulse current: 390A
Kind of package: tube
Reverse recovery time: 55ns
Power dissipation: 175W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.68 EUR
17+4.23 EUR
21+3.43 EUR
23+3.25 EUR
Mindestbestellmenge: 16
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DPF60C200HB
DPF60C200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 400A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.91V
Max. forward impulse current: 0.4kA
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
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IXTH24N65X2 IXT_24N65X2.pdf
IXTH24N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
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IXFA34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa34n65x3-datasheet?assetguid=7bd01bfc-f3d8-4755-8e6c-5e250cb5176f
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXFH34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet?assetguid=965e45cd-8715-4cf1-b85d-adaafdfc5ec2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTT34N65X2HV IXTT34N65X2HV.pdf
IXTT34N65X2HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 54nC
Produkt ist nicht verfügbar
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PLA192 PLA192.pdf
PLA192
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
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PLA192S PLA192.pdf
PLA192S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
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PLA192E PLA192.pdf
PLA192E
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
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PLA192STR PLA192.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
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OMA160S OMA160.pdf
OMA160S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
On-state resistance: 100Ω
Turn-on time: 125µs
Turn-off time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Max. operating current: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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OMA160STR OMA160.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
On-state resistance: 100Ω
Turn-on time: 125µs
Turn-off time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Max. operating current: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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VGO36-16IO7 VGO36-16io7.pdf
VGO36-16IO7
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 36A; THT
Electrical mounting: THT
Leads: wire Ø 0.75mm
Max. off-state voltage: 1.6kV
Load current: 36A
Gate current: 65mA
Max. forward impulse current: 280A
Mechanical mounting: screw
Version: module
Type of bridge rectifier: half-controlled
Case: ECO-PAC 1
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.26 EUR
Mindestbestellmenge: 4
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MCC26-16io1B MCC26-16io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC26-16io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.27V
Electrical mounting: screw
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.27V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 520A
Kind of package: bulk
Mechanical mounting: screw
Type of module: thyristor
Case: TO240AA
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.97 EUR
Mindestbestellmenge: 3
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MDD26-16N1B MDD26-16N1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MDD26-16N1B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 36A; TO240AA; Ufmax: 1.05V
Electrical mounting: screw
Max. off-state voltage: 1.6kV
Max. load current: 60A
Max. forward voltage: 1.05V
Load current: 36A
Semiconductor structure: double series
Max. forward impulse current: 555A
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+25.61 EUR
Mindestbestellmenge: 3
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IXTK200N10L2 IXT_200N10L2.pdf
IXTK200N10L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 200A; 1040W
Mounting: THT
Reverse recovery time: 245ns
Drain-source voltage: 100V
Drain current: 200A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 540nC
Technology: Linear L2™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO264
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DSSS35-008AR DSSS35-008AR.pdf
DSSS35-008AR
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 35Ax2; ISOPLUS247™; 190W
Type of diode: Schottky rectifying
Case: ISOPLUS247™
Mounting: THT
Max. off-state voltage: 80V
Load current: 35A x2
Semiconductor structure: double series
Max. forward voltage: 0.68V
Max. forward impulse current: 0.6kA
Kind of package: tube
Power dissipation: 190W
Produkt ist nicht verfügbar
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LAA710 LAA710.pdf
LAA710
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
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LAA710S LAA710.pdf
LAA710S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
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LAA710STR LAA710.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXTH20P50P IXT_20P50P.pdf
IXTH20P50P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -20A; 460W; TO247-3
Case: TO247-3
Reverse recovery time: 406ns
Drain-source voltage: -500V
Drain current: -20A
On-state resistance: 0.45Ω
Type of transistor: P-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Kind of package: tube
Gate charge: 103nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 453 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.57 EUR
8+9.48 EUR
60+9.37 EUR
Mindestbestellmenge: 7
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LOC110 LOC110.pdf
LOC110
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; THT; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: photodiode
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.79 EUR
36+1.99 EUR
38+1.89 EUR
Mindestbestellmenge: 19
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LOC110S LOC110.pdf
LOC110S
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: photodiode; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Insulation voltage: 3.75kV
Kind of output: photodiode
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.06 EUR
37+1.96 EUR
39+1.86 EUR
100+1.83 EUR
Mindestbestellmenge: 18
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LOC110P LOC110.pdf
LOC110P
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
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LOC110PTR LOC110.pdf
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
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LOC110STR LOC110.pdf
LOC110STR
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
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CPC2907B CPC2907B.pdf
CPC2907B
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Operating temperature: -40...85°C
Case: PowerSO8
On-state resistance: 0.15Ω
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Body dimensions: 21.08x10.16x3.3mm
Kind of output: MOSFET
Insulation voltage: 4kV
Contacts configuration: SPST-NO x2
Max. operating current: 2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.01 EUR
8+8.95 EUR
Mindestbestellmenge: 6
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IXFR44N80P IXFR44N80P.pdf
IXFR44N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MG12300D-BN2MM media?resourcetype=datasheets&itemid=96b0faab-d906-413a-8e95-40022164d554&filename=littelfuse_power_semiconductor_igbt_module_mg12300d_bn2mm_datasheet.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Technology: Field Stop; Trench
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MIXA600PF650TSF MIXA600PF650TSF.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 490A
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Case: SimBus F
Application: fans; for pump; for UPS; motors
Power dissipation: 1.75kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Gate-emitter voltage: ±20V
Collector current: 490A
Pulsed collector current: 1.2kA
Produkt ist nicht verfügbar
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IXFT42N50P2 IXFH(T)42N50P2.pdf
IXFT42N50P2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO268
Drain current: 42A
On-state resistance: 0.145Ω
Type of transistor: N-MOSFET
Power dissipation: 830W
Case: TO268
Kind of package: tube
Gate charge: 92nC
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: 500V
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