Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTT110N10P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 480W Case: TO268 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Technology: PolarHT™ Reverse recovery time: 130ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DSA15I45PA | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 0.63V Mounting: THT Case: TO220AC Semiconductor structure: single diode Max. forward impulse current: 340A Power dissipation: 85W Kind of package: tube Type of diode: Schottky rectifying Max. off-state voltage: 45V Max. forward voltage: 0.63V Load current: 15A |
auf Bestellung 642 Stücke: Lieferzeit 14-21 Tag (e) |
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DSA15IM45IB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.63V; 85W Mounting: THT Case: TO262 Semiconductor structure: single diode Max. forward impulse current: 340A Power dissipation: 85W Kind of package: tube Type of diode: Schottky rectifying Max. off-state voltage: 45V Max. forward voltage: 0.63V Load current: 15A |
auf Bestellung 546 Stücke: Lieferzeit 14-21 Tag (e) |
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IXBF20N360 | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W Type of transistor: IGBT Technology: BiMOSFET™ Case: ISOPLUS i4-pac™ x024c Mounting: THT Gate charge: 110nC Kind of package: tube Features of semiconductor devices: high voltage Collector-emitter voltage: 3.6kV Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 220A Power dissipation: 230W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXBX50N360HV | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 50A; 660W; TO247HV Type of transistor: IGBT Technology: BiMOSFET™ Case: TO247HV Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: high voltage Collector-emitter voltage: 3.6kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 420A Turn-on time: 889ns Turn-off time: 1.88µs Power dissipation: 660W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTR140P10T | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns Mounting: THT Case: ISOPLUS247™ Reverse recovery time: 130ns Drain-source voltage: -100V Drain current: -110A On-state resistance: 11mΩ Type of transistor: P-MOSFET Power dissipation: 270W Polarisation: unipolar Kind of package: tube Gate charge: 400nC Technology: TrenchP™ Kind of channel: enhancement Gate-source voltage: ±15V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MCC56-12io1B | IXYS |
![]() ![]() ![]() Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.62V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 60A Case: TO240AA Max. forward voltage: 1.62V Max. forward impulse current: 1.62kA Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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MCC56-12io8B | IXYS |
![]() ![]() ![]() Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.57V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 60A Case: TO240AA Max. forward voltage: 1.57V Max. forward impulse current: 1.5kA Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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VUO82-16NO7 | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 90A Max. forward impulse current: 750A Electrical mounting: screw Version: module Max. forward voltage: 0.78V Leads: M5 screws Case: PWS-D Mechanical mounting: screw |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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VUO82-12NO7 | IXYS |
![]() ![]() Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 90A; Ifsm: 750A Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 90A Max. forward impulse current: 750A Electrical mounting: screw Version: module Max. forward voltage: 1.08V Leads: M5 screws Case: PWS-D Mechanical mounting: screw |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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VUO82-14NO7 | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 90A; Ifsm: 750A Type of bridge rectifier: three-phase Max. off-state voltage: 1.4kV Load current: 90A Max. forward impulse current: 750A Electrical mounting: screw Version: module Max. forward voltage: 1.08V Leads: M5 screws Case: PWS-D Mechanical mounting: screw |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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VUO82-18NO7 | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 750A Type of bridge rectifier: three-phase Max. off-state voltage: 1.8kV Load current: 90A Max. forward impulse current: 750A Electrical mounting: screw Version: module Max. forward voltage: 1.08V Leads: M5 screws Case: PWS-D Mechanical mounting: screw |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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VUO82-08NO7 | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 800V; If: 90A; Ifsm: 750A Type of bridge rectifier: three-phase Max. off-state voltage: 0.8kV Load current: 90A Max. forward impulse current: 750A Electrical mounting: screw Version: module Max. forward voltage: 1.08V Leads: M5 screws Case: PWS-D Mechanical mounting: screw |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP4N100P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 26nC Power dissipation: 150W |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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MDD44-16N1B | IXYS |
![]() ![]() ![]() Description: Module: diode; double series; 1.6kV; If: 59A; TO240AA; Ufmax: 1.26V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 59A Case: TO240AA Max. forward voltage: 1.26V Max. forward impulse current: 980A Electrical mounting: screw Max. load current: 100A Mechanical mounting: screw |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
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MDD44-18N1B | IXYS |
![]() ![]() ![]() Description: Module: diode; double series; 1.8kV; If: 59A; TO240AA; Ufmax: 1.26V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 59A Case: TO240AA Max. forward voltage: 1.26V Max. forward impulse current: 980A Electrical mounting: screw Max. load current: 100A Mechanical mounting: screw |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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MDD44-12N1B | IXYS |
![]() ![]() ![]() Description: Module: diode; double series; 1.2kV; If: 59A; TO240AA; Ufmax: 1.26V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 59A Case: TO240AA Max. forward voltage: 1.26V Max. forward impulse current: 980A Electrical mounting: screw Max. load current: 100A Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MDD44-08N1B | IXYS |
![]() ![]() ![]() Description: Module: diode; double series; 800V; If: 59A; TO240AA; Ufmax: 1.26V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 59A Case: TO240AA Max. forward voltage: 1.26V Max. forward impulse current: 1.15kA Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MDD44-14N1B | IXYS |
![]() ![]() ![]() Description: Module: diode; double series; 1.4kV; If: 59A; TO240AA; Ufmax: 1.26V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 59A Case: TO240AA Max. forward voltage: 1.26V Max. forward impulse current: 1.15kA Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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FBE22-06N1 | IXYS |
![]() Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube Max. off-state voltage: 0.6kV Load current: 22A Max. forward impulse current: 50A Kind of package: tube Electrical mounting: THT Type of bridge rectifier: single-phase Case: ISOPLUS i4-pac™ x024a |
auf Bestellung 246 Stücke: Lieferzeit 14-21 Tag (e) |
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FBO40-12N | IXYS |
![]() Description: Bridge rectifier: single-phase; 1.2kV; If: 40A; Ifsm: 300A; THT Max. off-state voltage: 1.2kV Load current: 40A Max. forward impulse current: 0.3kA Kind of package: tube Electrical mounting: THT Type of bridge rectifier: single-phase Case: ISOPLUS i4-pac™ x024a |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
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IXKC23N60C5 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 147W Case: ISOPLUS220™ On-state resistance: 0.1Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: super junction coolmos |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DSI30-12A | IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO220AC; 160W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.25V Max. forward impulse current: 0.3kA Kind of package: tube Power dissipation: 160W |
auf Bestellung 158 Stücke: Lieferzeit 14-21 Tag (e) |
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MCMA400PD1600PTSF | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA Max. off-state voltage: 1.6kV Max. load current: 630A Load current: 400A Semiconductor structure: double series Max. forward impulse current: 10kA Electrical mounting: Press-Fit; screw Type of semiconductor module: diode-thyristor Case: SimBus F |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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CPC1302G | IXYS |
![]() Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8 Case: DIP8 Mounting: THT Number of channels: 2 Kind of output: Darlington Insulation voltage: 3.75kV CTR@If: 1000-8000%@1mA Type of optocoupler: optocoupler |
auf Bestellung 346 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1302GSTR | IXYS |
![]() Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs Mounting: SMD Number of channels: 2 Max. off-state voltage: 5V Turn-on time: 1µs Turn-off time: 80µs Kind of output: Darlington Insulation voltage: 3.75kV CTR@If: 1000-8000%@1mA Trigger current: 50mA Slew rate: 0.25V/μs Type of optocoupler: optocoupler |
auf Bestellung 521 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1302GS | IXYS |
![]() Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs Mounting: SMD Number of channels: 2 Max. off-state voltage: 5V Turn-on time: 1µs Turn-off time: 80µs Kind of output: Darlington Insulation voltage: 3.75kV CTR@If: 1000-8000%@1mA Trigger current: 50mA Slew rate: 0.25V/μs Type of optocoupler: optocoupler |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFB100N50P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™ Mounting: THT Case: PLUS264™ Reverse recovery time: 200ns Drain-source voltage: 500V Drain current: 100A On-state resistance: 49mΩ Type of transistor: N-MOSFET Power dissipation: 1890W Polarisation: unipolar Kind of package: tube Gate charge: 240nC Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFB100N50Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™ Mounting: THT Case: PLUS264™ Drain-source voltage: 500V Drain current: 100A On-state resistance: 49mΩ Type of transistor: N-MOSFET Power dissipation: 1.56kW Polarisation: unipolar Kind of package: tube Gate charge: 255nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFH20N80P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 20A Power dissipation: 500W Case: TO247-3 On-state resistance: 0.52Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFR20N80P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™ Case: ISOPLUS247™ Kind of channel: enhancement Mounting: THT Drain-source voltage: 800V Drain current: 10A On-state resistance: 570mΩ Type of transistor: N-MOSFET Power dissipation: 160W Polarisation: unipolar Kind of package: tube Gate charge: 86nC |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1977J | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 100mA Max. operating current: 1.25A Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 1Ω Mounting: THT Case: i4-pac Operating temperature: -40...85°C Body dimensions: 19.91x20.88x5.03mm Insulation voltage: 2.5kV Turn-on time: 20ms Turn-off time: 5ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXKR25N80C | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™ Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 25A Power dissipation: 250W Case: ISOPLUS247™ Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 180nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IXKC25N80C | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 25A Case: ISOPLUS220™ Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 550ns Gate charge: 180nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IXFQ22N60P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 500W Case: TO3P On-state resistance: 390mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTQ22N60P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 400W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MEA75-12DA | IXYS |
![]() ![]() Description: Module: diode; common anode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V Case: TO240AA Semiconductor structure: common anode Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode Max. off-state voltage: 1.2kV Max. forward voltage: 1.85V Load current: 75A Max. forward impulse current: 1.2kA |
auf Bestellung 62 Stücke: Lieferzeit 14-21 Tag (e) |
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MCB20P1200LB-TUB | IXYS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B Semiconductor structure: double series Drain-source voltage: 1.2kV Drain current: 25.5A On-state resistance: 98mΩ Type of transistor: N-MOSFET Case: SMPD-B Polarisation: unipolar Kind of package: tube Gate charge: 62nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
MCB20P1200LB-TRR | IXYS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B Semiconductor structure: double series Drain-source voltage: 1.2kV Drain current: 25.5A On-state resistance: 98mΩ Type of transistor: N-MOSFET Case: SMPD-B Polarisation: unipolar Kind of package: reel; tape Gate charge: 62nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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PAA150 | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS On-state resistance: 7Ω Turn-on time: 2.5ms Turn-off time: 0.5ms Body dimensions: 9.65x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Case: DIP8 Contacts configuration: SPST-NO x2 Max. operating current: 250mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Mounting: THT Control current max.: 50mA Manufacturer series: OptoMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PAA150S | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS On-state resistance: 7Ω Turn-on time: 2.5ms Turn-off time: 0.5ms Body dimensions: 9.65x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Case: DIP8 Contacts configuration: SPST-NO x2 Max. operating current: 250mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Mounting: SMT Control current max.: 50mA Manufacturer series: OptoMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PAA150P | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS On-state resistance: 7Ω Turn-on time: 2.5ms Turn-off time: 0.5ms Body dimensions: 9.65x6.35x2.16mm Kind of output: MOSFET Insulation voltage: 3.75kV Case: DIP8 Contacts configuration: SPST-NO x2 Max. operating current: 250mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Mounting: SMT Control current max.: 50mA Manufacturer series: OptoMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
PAA150PTR | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS On-state resistance: 7Ω Turn-on time: 2.5ms Turn-off time: 0.5ms Body dimensions: 9.65x6.35x2.16mm Kind of output: MOSFET Insulation voltage: 3.75kV Case: DIP8 Contacts configuration: SPST-NO x2 Max. operating current: 250mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Mounting: SMT Control current max.: 50mA Manufacturer series: OptoMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
PAA150STR | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS On-state resistance: 7Ω Turn-on time: 2.5ms Turn-off time: 0.5ms Body dimensions: 9.65x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Case: DIP8 Contacts configuration: SPST-NO x2 Max. operating current: 250mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Mounting: SMT Control current max.: 50mA Manufacturer series: OptoMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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DSB30C45HB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO247-3; Ufmax: 0.54V Max. off-state voltage: 45V Max. forward voltage: 0.54V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 340A Power dissipation: 70W Kind of package: tube Type of diode: Schottky rectifying Mounting: THT Case: TO247-3 |
auf Bestellung 274 Stücke: Lieferzeit 14-21 Tag (e) |
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DSB30C60PB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.64V Max. off-state voltage: 60V Max. forward voltage: 0.64V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 340A Power dissipation: 70W Kind of package: tube Type of diode: Schottky rectifying Heatsink thickness: 1.14...1.39mm Mounting: THT Case: TO220AB |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEE55-24N1F | IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 800A; Ufmax: 1.56V Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ Mounting: THT Case: ISOPLUS i4-pac™ x024b Max. off-state voltage: 1.2kV Max. forward voltage: 1.56V Load current: 60A Semiconductor structure: double series Reverse recovery time: 85ns Max. forward impulse current: 0.8kA Power dissipation: 250W |
Produkt ist nicht verfügbar |
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MDD95-16N1B | IXYS |
![]() ![]() ![]() Description: Module: diode; double series; 1.6kV; If: 120A; TO240AA; Ufmax: 1.13V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 120A Case: TO240AA Max. forward voltage: 1.13V Max. forward impulse current: 2.38kA Electrical mounting: screw Mechanical mounting: screw Max. load current: 180A |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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DH2x61-18A | IXYS |
![]() Description: Module: diode; double independent; 1.8kV; If: 60Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1.8kV Load current: 60A x2 Case: SOT227B Max. forward voltage: 2.71V Max. forward impulse current: 700A Electrical mounting: screw Mechanical mounting: screw Technology: Sonic FRD™ |
auf Bestellung 225 Stücke: Lieferzeit 14-21 Tag (e) |
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DSI2X55-12A | IXYS |
![]() ![]() Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 60A x2 Case: SOT227B Max. forward voltage: 1.22V Max. forward impulse current: 0.8kA Electrical mounting: screw Mechanical mounting: screw |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP76P10T | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; 70ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -76A Power dissipation: 298W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 25mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 70ns |
auf Bestellung 313 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP76N25T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO220AB; 148ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 76A Power dissipation: 460W Case: TO220AB On-state resistance: 44mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 148ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
MIXA61WB1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™ Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 190A Case: E3-Pack Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: XPT™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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DSEP30-12A | IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 200A Case: TO247-2 Max. forward voltage: 1.79V Power dissipation: 165W Reverse recovery time: 40ns Technology: HiPerFRED™ |
auf Bestellung 296 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEP30-12AR | IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; ISOPLUS247™ Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 200A Case: ISOPLUS247™ Max. forward voltage: 1.79V Power dissipation: 135W Reverse recovery time: 40ns Technology: HiPerFRED™ |
auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTQ22N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 350W Case: TO3P Mounting: THT Kind of package: tube On-state resistance: 0.27Ω Features of semiconductor devices: standard power mosfet Gate charge: 50nC Kind of channel: enhancement Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 22A |
auf Bestellung 111 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH22N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 350W Case: TO247-3 Mounting: THT Kind of package: tube On-state resistance: 0.27Ω Gate charge: 50nC Kind of channel: enhancement Drain-source voltage: 500V Drain current: 22A |
auf Bestellung 216 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH52N50P2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 960W Case: TO247-3 Mounting: THT Kind of package: tube On-state resistance: 0.12Ω Gate charge: 113nC Kind of channel: enhancement Drain-source voltage: 500V Drain current: 52A |
auf Bestellung 285 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTB62N50L | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 800W Case: PLUS264™ Mounting: THT Kind of package: tube On-state resistance: 0.1Ω Features of semiconductor devices: linear power mosfet Gate charge: 550nC Kind of channel: enhancement Reverse recovery time: 0.5µs Drain-source voltage: 500V Drain current: 62A |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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MMIX1F132N50P3 | IXYS |
![]() Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 520W Case: SMPD Mounting: SMD On-state resistance: 43mΩ Gate charge: 267nC Technology: HiPerFET™; Polar3™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 330A Reverse recovery time: 250ns Drain-source voltage: 500V Drain current: 63A |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTT110N10P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DSA15I45PA |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 0.63V
Mounting: THT
Case: TO220AC
Semiconductor structure: single diode
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward voltage: 0.63V
Load current: 15A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 0.63V
Mounting: THT
Case: TO220AC
Semiconductor structure: single diode
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward voltage: 0.63V
Load current: 15A
auf Bestellung 642 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
167+ | 0.43 EUR |
173+ | 0.41 EUR |
179+ | 0.4 EUR |
250+ | 0.39 EUR |
DSA15IM45IB |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.63V; 85W
Mounting: THT
Case: TO262
Semiconductor structure: single diode
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward voltage: 0.63V
Load current: 15A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.63V; 85W
Mounting: THT
Case: TO262
Semiconductor structure: single diode
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward voltage: 0.63V
Load current: 15A
auf Bestellung 546 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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157+ | 0.46 EUR |
167+ | 0.43 EUR |
173+ | 0.41 EUR |
179+ | 0.4 EUR |
250+ | 0.39 EUR |
IXBF20N360 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W
Type of transistor: IGBT
Technology: BiMOSFET™
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: high voltage
Collector-emitter voltage: 3.6kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 220A
Power dissipation: 230W
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W
Type of transistor: IGBT
Technology: BiMOSFET™
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: high voltage
Collector-emitter voltage: 3.6kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 220A
Power dissipation: 230W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXBX50N360HV |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 50A; 660W; TO247HV
Type of transistor: IGBT
Technology: BiMOSFET™
Case: TO247HV
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: high voltage
Collector-emitter voltage: 3.6kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 420A
Turn-on time: 889ns
Turn-off time: 1.88µs
Power dissipation: 660W
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 50A; 660W; TO247HV
Type of transistor: IGBT
Technology: BiMOSFET™
Case: TO247HV
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: high voltage
Collector-emitter voltage: 3.6kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 420A
Turn-on time: 889ns
Turn-off time: 1.88µs
Power dissipation: 660W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTR140P10T |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Mounting: THT
Case: ISOPLUS247™
Reverse recovery time: 130ns
Drain-source voltage: -100V
Drain current: -110A
On-state resistance: 11mΩ
Type of transistor: P-MOSFET
Power dissipation: 270W
Polarisation: unipolar
Kind of package: tube
Gate charge: 400nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Mounting: THT
Case: ISOPLUS247™
Reverse recovery time: 130ns
Drain-source voltage: -100V
Drain current: -110A
On-state resistance: 11mΩ
Type of transistor: P-MOSFET
Power dissipation: 270W
Polarisation: unipolar
Kind of package: tube
Gate charge: 400nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCC56-12io1B |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Max. forward impulse current: 1.62kA
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Max. forward impulse current: 1.62kA
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 30.93 EUR |
10+ | 30.43 EUR |
MCC56-12io8B |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VUO82-16NO7 |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 44.47 EUR |
VUO82-12NO7 | ![]() |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 40.6 EUR |
10+ | 39.04 EUR |
VUO82-14NO7 |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.4kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.4kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 42.53 EUR |
VUO82-18NO7 |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 46.4 EUR |
VUO82-08NO7 |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 38.67 EUR |
IXFP4N100P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Power dissipation: 150W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Power dissipation: 150W
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.5 EUR |
18+ | 4.06 EUR |
23+ | 3.23 EUR |
24+ | 3.06 EUR |
MDD44-16N1B |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 27.73 EUR |
36+ | 27.17 EUR |
MDD44-18N1B |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 29.09 EUR |
MDD44-12N1B |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MDD44-08N1B |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 800V; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 800V; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD44-14N1B |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FBE22-06N1 |
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Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube
Max. off-state voltage: 0.6kV
Load current: 22A
Max. forward impulse current: 50A
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Case: ISOPLUS i4-pac™ x024a
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube
Max. off-state voltage: 0.6kV
Load current: 22A
Max. forward impulse current: 50A
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Case: ISOPLUS i4-pac™ x024a
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.22 EUR |
6+ | 12.87 EUR |
25+ | 12.73 EUR |
100+ | 12.37 EUR |
FBO40-12N |
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Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1.2kV; If: 40A; Ifsm: 300A; THT
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.3kA
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Case: ISOPLUS i4-pac™ x024a
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1.2kV; If: 40A; Ifsm: 300A; THT
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.3kA
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Case: ISOPLUS i4-pac™ x024a
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 17.93 EUR |
25+ | 17.27 EUR |
IXKC23N60C5 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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DSI30-12A |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 0.3kA
Kind of package: tube
Power dissipation: 160W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 0.3kA
Kind of package: tube
Power dissipation: 160W
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.17 EUR |
37+ | 1.94 EUR |
39+ | 1.84 EUR |
MCMA400PD1600PTSF |
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 1.6kV
Max. load current: 630A
Load current: 400A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit; screw
Type of semiconductor module: diode-thyristor
Case: SimBus F
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 1.6kV
Max. load current: 630A
Load current: 400A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit; screw
Type of semiconductor module: diode-thyristor
Case: SimBus F
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1302G |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Case: DIP8
Mounting: THT
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 1000-8000%@1mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Case: DIP8
Mounting: THT
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 1000-8000%@1mA
Type of optocoupler: optocoupler
auf Bestellung 346 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.95 EUR |
38+ | 1.93 EUR |
40+ | 1.82 EUR |
CPC1302GSTR |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
Mounting: SMD
Number of channels: 2
Max. off-state voltage: 5V
Turn-on time: 1µs
Turn-off time: 80µs
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 1000-8000%@1mA
Trigger current: 50mA
Slew rate: 0.25V/μs
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
Mounting: SMD
Number of channels: 2
Max. off-state voltage: 5V
Turn-on time: 1µs
Turn-off time: 80µs
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 1000-8000%@1mA
Trigger current: 50mA
Slew rate: 0.25V/μs
Type of optocoupler: optocoupler
auf Bestellung 521 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.43 EUR |
36+ | 2.02 EUR |
38+ | 1.9 EUR |
500+ | 1.83 EUR |
CPC1302GS |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
Mounting: SMD
Number of channels: 2
Max. off-state voltage: 5V
Turn-on time: 1µs
Turn-off time: 80µs
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 1000-8000%@1mA
Trigger current: 50mA
Slew rate: 0.25V/μs
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
Mounting: SMD
Number of channels: 2
Max. off-state voltage: 5V
Turn-on time: 1µs
Turn-off time: 80µs
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 1000-8000%@1mA
Trigger current: 50mA
Slew rate: 0.25V/μs
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFB100N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Mounting: THT
Case: PLUS264™
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 100A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Power dissipation: 1890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 240nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Mounting: THT
Case: PLUS264™
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 100A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Power dissipation: 1890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 240nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
IXFB100N50Q3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
Mounting: THT
Case: PLUS264™
Drain-source voltage: 500V
Drain current: 100A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 255nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
Mounting: THT
Case: PLUS264™
Drain-source voltage: 500V
Drain current: 100A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 255nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFH20N80P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.78 EUR |
8+ | 9.17 EUR |
9+ | 8.67 EUR |
IXFR20N80P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Case: ISOPLUS247™
Kind of channel: enhancement
Mounting: THT
Drain-source voltage: 800V
Drain current: 10A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
Gate charge: 86nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Case: ISOPLUS247™
Kind of channel: enhancement
Mounting: THT
Drain-source voltage: 800V
Drain current: 10A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
Gate charge: 86nC
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.01 EUR |
8+ | 9.42 EUR |
9+ | 8.91 EUR |
30+ | 8.57 EUR |
CPC1977J |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1.25A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1.25A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXKR25N80C |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Power dissipation: 250W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Power dissipation: 250W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXKC25N80C |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 550ns
Gate charge: 180nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 550ns
Gate charge: 180nC
Produkt ist nicht verfügbar
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IXFQ22N60P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO3P
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO3P
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ22N60P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MEA75-12DA |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Case: TO240AA
Semiconductor structure: common anode
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.85V
Load current: 75A
Max. forward impulse current: 1.2kA
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Case: TO240AA
Semiconductor structure: common anode
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.85V
Load current: 75A
Max. forward impulse current: 1.2kA
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 32.86 EUR |
MCB20P1200LB-TUB |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Semiconductor structure: double series
Drain-source voltage: 1.2kV
Drain current: 25.5A
On-state resistance: 98mΩ
Type of transistor: N-MOSFET
Case: SMPD-B
Polarisation: unipolar
Kind of package: tube
Gate charge: 62nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Semiconductor structure: double series
Drain-source voltage: 1.2kV
Drain current: 25.5A
On-state resistance: 98mΩ
Type of transistor: N-MOSFET
Case: SMPD-B
Polarisation: unipolar
Kind of package: tube
Gate charge: 62nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCB20P1200LB-TRR |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Semiconductor structure: double series
Drain-source voltage: 1.2kV
Drain current: 25.5A
On-state resistance: 98mΩ
Type of transistor: N-MOSFET
Case: SMPD-B
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Semiconductor structure: double series
Drain-source voltage: 1.2kV
Drain current: 25.5A
On-state resistance: 98mΩ
Type of transistor: N-MOSFET
Case: SMPD-B
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PAA150 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Mounting: THT
Control current max.: 50mA
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Mounting: THT
Control current max.: 50mA
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PAA150S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Mounting: SMT
Control current max.: 50mA
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Mounting: SMT
Control current max.: 50mA
Manufacturer series: OptoMOS
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PAA150P |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Mounting: SMT
Control current max.: 50mA
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Mounting: SMT
Control current max.: 50mA
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
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PAA150PTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Mounting: SMT
Control current max.: 50mA
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Mounting: SMT
Control current max.: 50mA
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
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PAA150STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Mounting: SMT
Control current max.: 50mA
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Mounting: SMT
Control current max.: 50mA
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
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DSB30C45HB |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO247-3; Ufmax: 0.54V
Max. off-state voltage: 45V
Max. forward voltage: 0.54V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO247-3; Ufmax: 0.54V
Max. off-state voltage: 45V
Max. forward voltage: 0.54V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO247-3
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.23 EUR |
60+ | 1.2 EUR |
63+ | 1.14 EUR |
66+ | 1.09 EUR |
120+ | 1.06 EUR |
DSB30C60PB |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.64V
Max. off-state voltage: 60V
Max. forward voltage: 0.64V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.64V
Max. off-state voltage: 60V
Max. forward voltage: 0.64V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.63 EUR |
49+ | 1.47 EUR |
55+ | 1.3 EUR |
56+ | 1.29 EUR |
59+ | 1.22 EUR |
61+ | 1.17 EUR |
DSEE55-24N1F |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 800A; Ufmax: 1.56V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
Case: ISOPLUS i4-pac™ x024b
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.56V
Load current: 60A
Semiconductor structure: double series
Reverse recovery time: 85ns
Max. forward impulse current: 0.8kA
Power dissipation: 250W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 800A; Ufmax: 1.56V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
Case: ISOPLUS i4-pac™ x024b
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.56V
Load current: 60A
Semiconductor structure: double series
Reverse recovery time: 85ns
Max. forward impulse current: 0.8kA
Power dissipation: 250W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MDD95-16N1B |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 120A; TO240AA; Ufmax: 1.13V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 120A
Case: TO240AA
Max. forward voltage: 1.13V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 180A
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 120A; TO240AA; Ufmax: 1.13V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 120A
Case: TO240AA
Max. forward voltage: 1.13V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 180A
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 40.6 EUR |
36+ | 39.94 EUR |
DH2x61-18A |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.8kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 2.71V
Max. forward impulse current: 700A
Electrical mounting: screw
Mechanical mounting: screw
Technology: Sonic FRD™
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.8kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 2.71V
Max. forward impulse current: 700A
Electrical mounting: screw
Mechanical mounting: screw
Technology: Sonic FRD™
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 38.7 EUR |
3+ | 38.31 EUR |
10+ | 37.21 EUR |
DSI2X55-12A | ![]() |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.22V
Max. forward impulse current: 0.8kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.22V
Max. forward impulse current: 0.8kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 24.37 EUR |
10+ | 23.42 EUR |
IXTP76P10T |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
auf Bestellung 313 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.21 EUR |
15+ | 5 EUR |
16+ | 4.73 EUR |
IXTP76N25T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO220AB; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO220AB
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO220AB; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO220AB
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MIXA61WB1200TEH |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 190A
Case: E3-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: XPT™
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 190A
Case: E3-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: XPT™
Produkt ist nicht verfügbar
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DSEP30-12A |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 1.79V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 1.79V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.65 EUR |
16+ | 4.62 EUR |
17+ | 4.38 EUR |
270+ | 4.23 EUR |
DSEP30-12AR |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: ISOPLUS247™
Max. forward voltage: 1.79V
Power dissipation: 135W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: ISOPLUS247™
Max. forward voltage: 1.79V
Power dissipation: 135W
Reverse recovery time: 40ns
Technology: HiPerFRED™
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.21 EUR |
11+ | 6.59 EUR |
120+ | 6.48 EUR |
IXTQ22N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 350W
Case: TO3P
Mounting: THT
Kind of package: tube
On-state resistance: 0.27Ω
Features of semiconductor devices: standard power mosfet
Gate charge: 50nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 22A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 350W
Case: TO3P
Mounting: THT
Kind of package: tube
On-state resistance: 0.27Ω
Features of semiconductor devices: standard power mosfet
Gate charge: 50nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 22A
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.15 EUR |
16+ | 4.53 EUR |
17+ | 4.29 EUR |
IXFH22N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 350W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 0.27Ω
Gate charge: 50nC
Kind of channel: enhancement
Drain-source voltage: 500V
Drain current: 22A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 350W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 0.27Ω
Gate charge: 50nC
Kind of channel: enhancement
Drain-source voltage: 500V
Drain current: 22A
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.25 EUR |
13+ | 5.52 EUR |
14+ | 5.22 EUR |
IXFH52N50P2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 0.12Ω
Gate charge: 113nC
Kind of channel: enhancement
Drain-source voltage: 500V
Drain current: 52A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 0.12Ω
Gate charge: 113nC
Kind of channel: enhancement
Drain-source voltage: 500V
Drain current: 52A
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.8 EUR |
7+ | 10.57 EUR |
8+ | 10 EUR |
IXTB62N50L |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 800W
Case: PLUS264™
Mounting: THT
Kind of package: tube
On-state resistance: 0.1Ω
Features of semiconductor devices: linear power mosfet
Gate charge: 550nC
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 62A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 800W
Case: PLUS264™
Mounting: THT
Kind of package: tube
On-state resistance: 0.1Ω
Features of semiconductor devices: linear power mosfet
Gate charge: 550nC
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 62A
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 39.3 EUR |
MMIX1F132N50P3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 520W
Case: SMPD
Mounting: SMD
On-state resistance: 43mΩ
Gate charge: 267nC
Technology: HiPerFET™; Polar3™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 330A
Reverse recovery time: 250ns
Drain-source voltage: 500V
Drain current: 63A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 520W
Case: SMPD
Mounting: SMD
On-state resistance: 43mΩ
Gate charge: 267nC
Technology: HiPerFET™; Polar3™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 330A
Reverse recovery time: 250ns
Drain-source voltage: 500V
Drain current: 63A
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 48.18 EUR |
10+ | 46.33 EUR |