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IXFT150N20T IXFT150N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CE0509EDC31820&compId=IXFH(T)150N20T.pdf?ci_sign=1eb8849a53fa359ec9a3208d53f9c1a524823d86 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Case: TO268
Reverse recovery time: 100ns
Drain-source voltage: 200V
Drain current: 150A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 177nC
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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IXFT150N17T2 IXFT150N17T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC653820&compId=IXFT150N17T2.pdf?ci_sign=f262fe46c60fa0aac8b4fe8177f56a21a91be14c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 175V; 150A; 880W; TO268
Case: TO268
Drain-source voltage: 175V
Drain current: 150A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 880W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 233nC
Kind of channel: enhancement
Mounting: SMD
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IXFT150N25X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC0B9820&compId=IXFH150N25X3.pdf?ci_sign=9b6304dddbd0134b0ebf2cbe9b1dfd52edbdaa17 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Case: TO268HV
Reverse recovery time: 140ns
Drain-source voltage: 250V
Drain current: 150A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 735W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 154nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
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IXFA230N075T2-7 IXFA230N075T2-7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9405C15EB820&compId=IXFA230N075T2-7.pdf?ci_sign=1b2d5f843fc07ea895f6f33fcdd57b9553e3c1a9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
auf Bestellung 13 Stücke:
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9+8.41 EUR
13+5.51 EUR
Mindestbestellmenge: 9
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CPC1135NTR CPC1135NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20E20C7&compId=CPC1135N.pdf?ci_sign=4a18a2dbc91e1ae370bd5a8a3cd54dcab1a8fe21 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
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IXFH170N15X3 IXYS media?resourcetype=datasheets&itemid=c5c224fa-81a8-4c2d-8c6f-8426796fa09e&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_170n15x3_datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
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IXFQ170N15X3 IXYS media?resourcetype=datasheets&itemid=c5c224fa-81a8-4c2d-8c6f-8426796fa09e&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_170n15x3_datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Produkt ist nicht verfügbar
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CMA30E1600PN CMA30E1600PN IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF0854FB74698BF&compId=CMA30E1600PN.pdf?ci_sign=ac6b8015d411f31ca9b64b1258143826bba145d1 Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 36A; 23A; Igt: 28/50mA; TO220FP; THT; tube
Case: TO220FP
Kind of package: tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 28/50mA
Load current: 23A
Max. load current: 36A
Max. forward impulse current: 220A
Max. off-state voltage: 1.6kV
auf Bestellung 60 Stücke:
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14+5.22 EUR
27+2.66 EUR
29+2.52 EUR
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CMA30P1600FC CMA30P1600FC IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF08D03572338BF&compId=CMA30P1600FC.pdf?ci_sign=b35d1cae280ae90ecf7858a290186bcdab0ca428 Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 55/80mA; THT; tube; Ifsm: 340A
Case: ISOPLUS i4-pac™ x024a
Kind of package: tube
Semiconductor structure: double series
Mounting: THT
Type of thyristor: thyristor
Gate current: 55/80mA
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 340A
Max. off-state voltage: 1.6kV
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CMA30E1600PZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCF9BA4EDBD100C4&compId=CMA30E1600PZ.pdf?ci_sign=ec767d1695992f4e7765123cea44f3848cab76a9 Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Kind of package: tube
Mounting: SMD
Type of thyristor: thyristor
Gate current: 28/50mA
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 220A
Max. off-state voltage: 1.6kV
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MCMA35P1200TA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 35A; TO240AA; Ufmax: 1.56V
Case: TO240AA
Kind of package: bulk
Electrical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Mechanical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.56V
Load current: 35A
Max. off-state voltage: 1.2kV
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MCMA35P1600TA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 35A; TO240AA; Ufmax: 1.56V
Case: TO240AA
Kind of package: bulk
Electrical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Mechanical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.56V
Load current: 35A
Max. off-state voltage: 1.6kV
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MCMA35PD1200TB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C891BBC684418BF&compId=MCMA35PD1200TB.pdf?ci_sign=8f2210e55174453be6b7cd627cb8d107254307ca pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Case: TO240AA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 78/200mA
Threshold on-voltage: 0.87V
Max. forward voltage: 1.22V
Load current: 35A
Max. load current: 55A
Max. forward impulse current: 520A
Max. off-state voltage: 1.2kV
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PM1204 PM1204 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2E80C7&compId=PM1204.pdf?ci_sign=fe7c8ce608d80997c5fe6a85d8dc00b0c1445e99 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Mounting: THT
Case: DIP6
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.48 EUR
14+5.36 EUR
15+5.06 EUR
100+4.98 EUR
Mindestbestellmenge: 9
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PM1205 PM1205 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: THT
Case: DIP6
auf Bestellung 245 Stücke:
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12+5.99 EUR
14+5.38 EUR
15+5.02 EUR
100+4.89 EUR
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PS1201 PS1201 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3300C7&compId=PS1201.pdf?ci_sign=0f613ed3e25b644f7c8a3385a41559216377d791 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Mounting: THT
Operating temperature: -40...85°C
Case: SIP4
auf Bestellung 145 Stücke:
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14+5.13 EUR
15+4.86 EUR
100+4.66 EUR
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PD1201 PD1201 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98340C7&compId=PD1201.pdf?ci_sign=4796b58c31b7fff3573b515888640bb4399b4c51 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Mounting: THT
Operating temperature: -40...85°C
Case: DIP4
auf Bestellung 185 Stücke:
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7+10.27 EUR
10+7.54 EUR
11+7.12 EUR
100+6.85 EUR
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PM1206 PM1206 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3160C7&compId=PM1206.pdf?ci_sign=c09be491d231e3d21eac1f0a3551944d7ccc748d Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 100mA
Mounting: THT
Case: DIP6
auf Bestellung 83 Stücke:
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7+10.68 EUR
12+6.08 EUR
13+5.75 EUR
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PM1204S PM1204S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2E80C7&compId=PM1204.pdf?ci_sign=fe7c8ce608d80997c5fe6a85d8dc00b0c1445e99 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
auf Bestellung 83 Stücke:
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8+9.52 EUR
14+5.12 EUR
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LCA220 LCA220 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461978340C7&compId=LCA220.pdf?ci_sign=61bc4e4a6f5dcac95539f58decc1d0b4cde55e76 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
On-state resistance: 20Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 100mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.18 EUR
13+5.53 EUR
14+5.23 EUR
50+5.12 EUR
Mindestbestellmenge: 10
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LCA210S LCA210S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461978040C7&compId=LCA210.pdf?ci_sign=d260a6d8e34592bbe91146cca268c12b869912e4 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 85mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 100mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP8
auf Bestellung 93 Stücke:
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11+6.86 EUR
19+3.9 EUR
20+3.69 EUR
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LCA210 LCA210 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461978040C7&compId=LCA210.pdf?ci_sign=d260a6d8e34592bbe91146cca268c12b869912e4 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 85mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 100mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
auf Bestellung 45 Stücke:
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18+4.16 EUR
19+3.9 EUR
20+3.69 EUR
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IXXK200N60B3 IXXK200N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3A751202E3820&compId=IXXK(X)200N60B3.pdf?ci_sign=d705925bcf61076f18de95760155dec82ea13f8e Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 200A
Power dissipation: 1.63kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 395ns
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IXXN200N60B3 IXXN200N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F3094154329820&compId=IXXN200N60B3.pdf?ci_sign=ef812292331fc8d824cb7af5b362bedf7a3cb9e9 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 160A; SOT227B
Technology: GenX3™; XPT™
Collector current: 160A
Power dissipation: 940W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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IXXN200N60B3H1 IXXN200N60B3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F320D551551820&compId=IXXN200N60B3H1.pdf?ci_sign=f9a69497086ce9ecb9383c5818b60c7cdfb93b64 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Technology: GenX3™; XPT™
Collector current: 98A
Power dissipation: 780W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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IXXX200N60B3 IXXX200N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3A751202E3820&compId=IXXK(X)200N60B3.pdf?ci_sign=d705925bcf61076f18de95760155dec82ea13f8e Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 200A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 395ns
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MMIX1X200N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3B85789625820&compId=MMIX1X200N60B3.pdf?ci_sign=84acc0af2a6bf8c13487a93e933f7203148ae1d0 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 120A; 625W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 625W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mounting: SMD
Gate charge: 315nC
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 395ns
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MMIX1X200N60B3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3BC62455B9820&compId=MMIX1X200N60B3H1.pdf?ci_sign=4eb98eeb74ccf8882cbf2fb2254ebb50f4a1cb97 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 72A; 520W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 520W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mounting: SMD
Gate charge: 315nC
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 395ns
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IXFH44N50P IXFH44N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0758E5260469&compId=IXFK44N50P.pdf?ci_sign=d640f1f4194f9dc2e366fdcc55cc57269a9c0090 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 658W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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30+9.8 EUR
120+9.67 EUR
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CPC1943GSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81740C7&compId=CPC1943.pdf?ci_sign=a01e70cd2a1035fd2c83dd4b3dd11577a147baa4 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Switching method: zero voltage switching
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Insulation voltage: 3.75kV
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MMIX1T550N055T2
+1
 		MMIX1T550N055T2 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1t550n055t2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W
Type of transistor: N-MOSFET
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 2kA
Power dissipation: 830W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 595nC
Kind of channel: enhancement
Reverse recovery time: 100ns
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IXTN550N055T2 IXTN550N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C3A24CD3A38BF&compId=IXTN550N055T2.pdf?ci_sign=2324e5fc4b6c33e3b1310d090cd76dd431fc6848 Category: Transistor modules MOSFET
Description: Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 1.65kA
Power dissipation: 940W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 1.3mΩ
Gate charge: 595nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
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IXTK550N055T2 IXTK550N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4B03B813A9820&compId=IXTK(X)550N055T2.pdf?ci_sign=f1ad32c02f9d29b7483f944fa5a5ab884958f33f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 1250W; TO264; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 595nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
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IXTX550N055T2 IXTX550N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4B03B813A9820&compId=IXTK(X)550N055T2.pdf?ci_sign=f1ad32c02f9d29b7483f944fa5a5ab884958f33f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 1250W; PLUS247™; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 595nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
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DSA240X150NA DSA240X150NA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991AF5C2EF0B738BF&compId=DSA240X150NA.pdf?ci_sign=0270766f6ee4cb1d8bd81ef7f4fa0462d6851a0d Category: Diode modules
Description: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw
Max. forward voltage: 0.85V
Load current: 120A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Type of semiconductor module: diode
Case: SOT227B
Max. off-state voltage: 150V
Produkt ist nicht verfügbar
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IXFH12N80P IXFH12N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC08D820&compId=IXFH12N80P.pdf?ci_sign=32fa00e40775d7a5a0c15f13c6146816f2d2bc5b Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Produkt ist nicht verfügbar
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DSA50C100HB DSA50C100HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C994FA21D458BF&compId=DSA50C100HB.pdf?ci_sign=c60786181208f890784e1a7d6e0312cd41816e7a Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.72V
Mounting: THT
Case: TO247-3
Max. off-state voltage: 100V
Max. forward voltage: 0.72V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.44kA
Power dissipation: 160W
Kind of package: tube
Type of diode: Schottky rectifying
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IXFA26N50P3 IXFA26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Drain-source voltage: 500V
Drain current: 26A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Gate charge: 42nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
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IXFA26N30X3 IXFA26N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBAA25B128D8BF&compId=IXF_26N30X3.pdf?ci_sign=7542ebe8db09680e18acec1f007a854c704096f0 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Reverse recovery time: 105ns
Drain-source voltage: 300V
Drain current: 26A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
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MMIX1F160N30T MMIX1F160N30T IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f160n30t_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Pulsed drain current: 440A
Power dissipation: 570W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 367nC
Kind of channel: enhancement
Reverse recovery time: 200ns
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2+44.97 EUR
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MDD142-18N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB836528462340C4&compId=MDD142-18N1.pdf?ci_sign=9366f54f491397d4f9552c3d0401e2db9c8cabd0 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 165A; Y4-M6; Ufmax: 1.05V
Case: Y4-M6
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode
Max. forward voltage: 1.05V
Load current: 165A
Semiconductor structure: double series
Max. forward impulse current: 4.7kA
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IXDD630YI IXDD630YI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
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PLA134STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98B60C7&compId=PLA134.pdf?ci_sign=7731cdb8abeac785cdd7ba775e2f0d505010a3bd Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Operating temperature: -40...85°C
On-state resistance: 3Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 350mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Case: DIP6
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DSEI60-06A DSEI60-06A IXYS pVersion=0046&contRep=ZT&docId=E1C04A8FCC4FB5F1A6F5005056AB5A8F&compId=DSEI60-06A.pdf?ci_sign=42521ecd82a6487195d59776bc2a7ad81b015792 description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 550A; TO247-2; 166W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.55kA
Case: TO247-2
Max. forward voltage: 1.5V
Power dissipation: 166W
Reverse recovery time: 35ns
Technology: FRED
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11+6.84 EUR
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DSEI30-12A DSEI30-12A IXYS pVersion=0046&contRep=ZT&docId=E2916DEC5E36DDF19A99005056AB752F&compId=92722.pdf?ci_sign=990727ced795f1f61d5fc4ad016abc029ccb1a31 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26A; tube; Ifsm: 200A; TO247-2; 138W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 2.2V
Power dissipation: 138W
Reverse recovery time: 40ns
Technology: FRED
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IXFH40N50Q IXFH40N50Q IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F63820&compId=IXFH40N50Q.pdf?ci_sign=3f4d61ef909d6e752c1d54406498f3c6045e4fe5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
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IXTH40N50L2 IXTH40N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBC36E59269820&compId=IXTH(T%2CQ)40N50L2.pdf?ci_sign=fb22fbad598fb6bca1335d953b47c9e27b2aa9b2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTQ40N50L2 IXTQ40N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBC36E59269820&compId=IXTH(T%2CQ)40N50L2.pdf?ci_sign=fb22fbad598fb6bca1335d953b47c9e27b2aa9b2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTT40N50L2 IXTT40N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBC36E59269820&compId=IXTH(T%2CQ)40N50L2.pdf?ci_sign=fb22fbad598fb6bca1335d953b47c9e27b2aa9b2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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DSSK40-006B DSSK40-006B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BEDE1D97E7F98BF&compId=DSSK40-006B.pdf?ci_sign=9bf8f54b3f4471da5521b9ae2a65b7b5d865e2fd Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 20Ax2; TO247-3; Ufmax: 0.5V
Kind of package: tube
Mounting: THT
Max. forward impulse current: 0.5kA
Power dissipation: 150W
Type of diode: Schottky rectifying
Load current: 20A x2
Max. forward voltage: 0.5V
Max. off-state voltage: 60V
Case: TO247-3
Semiconductor structure: common cathode; double
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DSSK40-008B DSSK40-008B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB8ABA26A3D8BF&compId=DSSK40-008B.pdf?ci_sign=d6e1d497b4e9caad28525ccc6f0f591b4417d3d9 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 20Ax2; TO247-3; Ufmax: 0.57V
Kind of package: tube
Mounting: THT
Max. forward impulse current: 0.5kA
Power dissipation: 115W
Type of diode: Schottky rectifying
Load current: 20A x2
Max. forward voltage: 0.57V
Max. off-state voltage: 80V
Case: TO247-3
Semiconductor structure: common cathode; double
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IXTJ4N150 IXTJ4N150 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE88AEF8FFFD52F13D1&compId=IXTJ4N150.pdf?ci_sign=98054bbf38cae70553bc587ef93497c3257e4fed Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 110W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
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IXTA4N150HV IXTA4N150HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4FFE04D7BF820&compId=IXTA(T)4N150HV.pdf?ci_sign=ec9174563c34e31231ef390b44e76d450e2c55dc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH4N150 IXTH4N150 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494FF820&compId=IXTH4N150.pdf?ci_sign=7ee4dfc0f51419d8a3e85073d6cfaef92c301795 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO247-3
On-state resistance: 6Ω
Mounting: THT
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTT4N150HV IXTT4N150HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4FFE04D7BF820&compId=IXTA(T)4N150HV.pdf?ci_sign=ec9174563c34e31231ef390b44e76d450e2c55dc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO268HV; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO268HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSEI2X30-12B DSEI2X30-12B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF2376DF3A1F5EA&compId=DSEI2X30-12B.pdf?ci_sign=111738f22df8f18aecc3d2682c1007fb4c5ff4ca Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 27Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.2V
Load current: 27A x2
Semiconductor structure: double independent
Max. forward impulse current: 375A
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
3+28.43 EUR
10+28.41 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DSEP30-12B DSEP30-12B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8E9FA31CD45960C4&compId=DSEP30-12B.pdf?ci_sign=d28e281735b3bfc38bce88f4534d9d13f2a00f49 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Mounting: THT
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 3.75V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 200A
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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PM1206S PM1206S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3160C7&compId=PM1206.pdf?ci_sign=c09be491d231e3d21eac1f0a3551944d7ccc748d Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PM1205S PM1205S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PM1205STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT150N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CE0509EDC31820&compId=IXFH(T)150N20T.pdf?ci_sign=1eb8849a53fa359ec9a3208d53f9c1a524823d86
IXFT150N20T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Case: TO268
Reverse recovery time: 100ns
Drain-source voltage: 200V
Drain current: 150A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 177nC
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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IXFT150N17T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC653820&compId=IXFT150N17T2.pdf?ci_sign=f262fe46c60fa0aac8b4fe8177f56a21a91be14c
IXFT150N17T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 175V; 150A; 880W; TO268
Case: TO268
Drain-source voltage: 175V
Drain current: 150A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 880W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 233nC
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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IXFT150N25X3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC0B9820&compId=IXFH150N25X3.pdf?ci_sign=9b6304dddbd0134b0ebf2cbe9b1dfd52edbdaa17
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Case: TO268HV
Reverse recovery time: 140ns
Drain-source voltage: 250V
Drain current: 150A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 735W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 154nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Produkt ist nicht verfügbar
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IXFA230N075T2-7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9405C15EB820&compId=IXFA230N075T2-7.pdf?ci_sign=1b2d5f843fc07ea895f6f33fcdd57b9553e3c1a9
IXFA230N075T2-7
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.41 EUR
13+5.51 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
CPC1135NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20E20C7&compId=CPC1135N.pdf?ci_sign=4a18a2dbc91e1ae370bd5a8a3cd54dcab1a8fe21
CPC1135NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXFH170N15X3 media?resourcetype=datasheets&itemid=c5c224fa-81a8-4c2d-8c6f-8426796fa09e&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_170n15x3_datasheet.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ170N15X3 media?resourcetype=datasheets&itemid=c5c224fa-81a8-4c2d-8c6f-8426796fa09e&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_170n15x3_datasheet.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMA30E1600PN pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF0854FB74698BF&compId=CMA30E1600PN.pdf?ci_sign=ac6b8015d411f31ca9b64b1258143826bba145d1
CMA30E1600PN
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 36A; 23A; Igt: 28/50mA; TO220FP; THT; tube
Case: TO220FP
Kind of package: tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 28/50mA
Load current: 23A
Max. load current: 36A
Max. forward impulse current: 220A
Max. off-state voltage: 1.6kV
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.22 EUR
27+2.66 EUR
29+2.52 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
CMA30P1600FC pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF08D03572338BF&compId=CMA30P1600FC.pdf?ci_sign=b35d1cae280ae90ecf7858a290186bcdab0ca428
CMA30P1600FC
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 55/80mA; THT; tube; Ifsm: 340A
Case: ISOPLUS i4-pac™ x024a
Kind of package: tube
Semiconductor structure: double series
Mounting: THT
Type of thyristor: thyristor
Gate current: 55/80mA
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 340A
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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CMA30E1600PZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCF9BA4EDBD100C4&compId=CMA30E1600PZ.pdf?ci_sign=ec767d1695992f4e7765123cea44f3848cab76a9
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Kind of package: tube
Mounting: SMD
Type of thyristor: thyristor
Gate current: 28/50mA
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 220A
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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MCMA35P1200TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 35A; TO240AA; Ufmax: 1.56V
Case: TO240AA
Kind of package: bulk
Electrical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Mechanical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.56V
Load current: 35A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCMA35P1600TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 35A; TO240AA; Ufmax: 1.56V
Case: TO240AA
Kind of package: bulk
Electrical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Mechanical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.56V
Load current: 35A
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCMA35PD1200TB pVersion=0046&contRep=ZT&docId=005056AB82531EE98C891BBC684418BF&compId=MCMA35PD1200TB.pdf?ci_sign=8f2210e55174453be6b7cd627cb8d107254307ca pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Case: TO240AA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 78/200mA
Threshold on-voltage: 0.87V
Max. forward voltage: 1.22V
Load current: 35A
Max. load current: 55A
Max. forward impulse current: 520A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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PM1204 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2E80C7&compId=PM1204.pdf?ci_sign=fe7c8ce608d80997c5fe6a85d8dc00b0c1445e99
PM1204
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Mounting: THT
Case: DIP6
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.48 EUR
14+5.36 EUR
15+5.06 EUR
100+4.98 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
PM1205 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22
PM1205
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: THT
Case: DIP6
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.99 EUR
14+5.38 EUR
15+5.02 EUR
100+4.89 EUR
Mindestbestellmenge: 12
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PS1201 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3300C7&compId=PS1201.pdf?ci_sign=0f613ed3e25b644f7c8a3385a41559216377d791
PS1201
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Mounting: THT
Operating temperature: -40...85°C
Case: SIP4
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.13 EUR
15+4.86 EUR
100+4.66 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
PD1201 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98340C7&compId=PD1201.pdf?ci_sign=4796b58c31b7fff3573b515888640bb4399b4c51
PD1201
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Mounting: THT
Operating temperature: -40...85°C
Case: DIP4
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.27 EUR
10+7.54 EUR
11+7.12 EUR
100+6.85 EUR
Mindestbestellmenge: 7
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PM1206 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3160C7&compId=PM1206.pdf?ci_sign=c09be491d231e3d21eac1f0a3551944d7ccc748d
PM1206
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 100mA
Mounting: THT
Case: DIP6
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.68 EUR
12+6.08 EUR
13+5.75 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
PM1204S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2E80C7&compId=PM1204.pdf?ci_sign=fe7c8ce608d80997c5fe6a85d8dc00b0c1445e99
PM1204S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.52 EUR
14+5.12 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
LCA220 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461978340C7&compId=LCA220.pdf?ci_sign=61bc4e4a6f5dcac95539f58decc1d0b4cde55e76
LCA220
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
On-state resistance: 20Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 100mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.18 EUR
13+5.53 EUR
14+5.23 EUR
50+5.12 EUR
Mindestbestellmenge: 10
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LCA210S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461978040C7&compId=LCA210.pdf?ci_sign=d260a6d8e34592bbe91146cca268c12b869912e4
LCA210S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 85mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 100mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP8
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.86 EUR
19+3.9 EUR
20+3.69 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
LCA210 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461978040C7&compId=LCA210.pdf?ci_sign=d260a6d8e34592bbe91146cca268c12b869912e4
LCA210
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 85mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 100mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.16 EUR
19+3.9 EUR
20+3.69 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IXXK200N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3A751202E3820&compId=IXXK(X)200N60B3.pdf?ci_sign=d705925bcf61076f18de95760155dec82ea13f8e
IXXK200N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 200A
Power dissipation: 1.63kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 395ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXXN200N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F3094154329820&compId=IXXN200N60B3.pdf?ci_sign=ef812292331fc8d824cb7af5b362bedf7a3cb9e9
IXXN200N60B3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 160A; SOT227B
Technology: GenX3™; XPT™
Collector current: 160A
Power dissipation: 940W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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IXXN200N60B3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F320D551551820&compId=IXXN200N60B3H1.pdf?ci_sign=f9a69497086ce9ecb9383c5818b60c7cdfb93b64
IXXN200N60B3H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Technology: GenX3™; XPT™
Collector current: 98A
Power dissipation: 780W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXXX200N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3A751202E3820&compId=IXXK(X)200N60B3.pdf?ci_sign=d705925bcf61076f18de95760155dec82ea13f8e
IXXX200N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 200A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 395ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMIX1X200N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3B85789625820&compId=MMIX1X200N60B3.pdf?ci_sign=84acc0af2a6bf8c13487a93e933f7203148ae1d0
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 120A; 625W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 625W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mounting: SMD
Gate charge: 315nC
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 395ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMIX1X200N60B3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3BC62455B9820&compId=MMIX1X200N60B3H1.pdf?ci_sign=4eb98eeb74ccf8882cbf2fb2254ebb50f4a1cb97
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 72A; 520W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 520W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mounting: SMD
Gate charge: 315nC
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 395ns
Produkt ist nicht verfügbar
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IXFH44N50P description pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0758E5260469&compId=IXFK44N50P.pdf?ci_sign=d640f1f4194f9dc2e366fdcc55cc57269a9c0090
IXFH44N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 658W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.22 EUR
7+10.64 EUR
8+10.05 EUR
30+9.8 EUR
120+9.67 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
CPC1943GSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81740C7&compId=CPC1943.pdf?ci_sign=a01e70cd2a1035fd2c83dd4b3dd11577a147baa4
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Switching method: zero voltage switching
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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MMIX1T550N055T2 littelfuse_discrete_mosfets_smpd_packages_mmix1t550n055t2_datasheet.pdf.pdf
MMIX1T550N055T2
+1
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W
Type of transistor: N-MOSFET
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 2kA
Power dissipation: 830W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 595nC
Kind of channel: enhancement
Reverse recovery time: 100ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+46.58 EUR
10+44.84 EUR
20+44.79 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXTN550N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C3A24CD3A38BF&compId=IXTN550N055T2.pdf?ci_sign=2324e5fc4b6c33e3b1310d090cd76dd431fc6848
IXTN550N055T2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 1.65kA
Power dissipation: 940W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 1.3mΩ
Gate charge: 595nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTK550N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4B03B813A9820&compId=IXTK(X)550N055T2.pdf?ci_sign=f1ad32c02f9d29b7483f944fa5a5ab884958f33f
IXTK550N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 1250W; TO264; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 595nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTX550N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4B03B813A9820&compId=IXTK(X)550N055T2.pdf?ci_sign=f1ad32c02f9d29b7483f944fa5a5ab884958f33f
IXTX550N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 1250W; PLUS247™; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 595nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSA240X150NA pVersion=0046&contRep=ZT&docId=005056AB82531EE991AF5C2EF0B738BF&compId=DSA240X150NA.pdf?ci_sign=0270766f6ee4cb1d8bd81ef7f4fa0462d6851a0d
DSA240X150NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw
Max. forward voltage: 0.85V
Load current: 120A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Type of semiconductor module: diode
Case: SOT227B
Max. off-state voltage: 150V
Produkt ist nicht verfügbar
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IXFH12N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC08D820&compId=IXFH12N80P.pdf?ci_sign=32fa00e40775d7a5a0c15f13c6146816f2d2bc5b
IXFH12N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSA50C100HB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C994FA21D458BF&compId=DSA50C100HB.pdf?ci_sign=c60786181208f890784e1a7d6e0312cd41816e7a
DSA50C100HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.72V
Mounting: THT
Case: TO247-3
Max. off-state voltage: 100V
Max. forward voltage: 0.72V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.44kA
Power dissipation: 160W
Kind of package: tube
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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IXFA26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFA26N50P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Drain-source voltage: 500V
Drain current: 26A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Gate charge: 42nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.25 EUR
Mindestbestellmenge: 32
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IXFA26N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBAA25B128D8BF&compId=IXF_26N30X3.pdf?ci_sign=7542ebe8db09680e18acec1f007a854c704096f0 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFA26N30X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Reverse recovery time: 105ns
Drain-source voltage: 300V
Drain current: 26A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Produkt ist nicht verfügbar
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MMIX1F160N30T littelfuse_discrete_mosfets_smpd_packages_mmix1f160n30t_datasheet.pdf.pdf
MMIX1F160N30T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Pulsed drain current: 440A
Power dissipation: 570W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 367nC
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+44.97 EUR
10+43.24 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MDD142-18N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB836528462340C4&compId=MDD142-18N1.pdf?ci_sign=9366f54f491397d4f9552c3d0401e2db9c8cabd0 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 165A; Y4-M6; Ufmax: 1.05V
Case: Y4-M6
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode
Max. forward voltage: 1.05V
Load current: 165A
Semiconductor structure: double series
Max. forward impulse current: 4.7kA
Produkt ist nicht verfügbar
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IXDD630YI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDD630YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
Produkt ist nicht verfügbar
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PLA134STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98B60C7&compId=PLA134.pdf?ci_sign=7731cdb8abeac785cdd7ba775e2f0d505010a3bd
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Operating temperature: -40...85°C
On-state resistance: 3Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 350mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Case: DIP6
Produkt ist nicht verfügbar
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DSEI60-06A description pVersion=0046&contRep=ZT&docId=E1C04A8FCC4FB5F1A6F5005056AB5A8F&compId=DSEI60-06A.pdf?ci_sign=42521ecd82a6487195d59776bc2a7ad81b015792
DSEI60-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 550A; TO247-2; 166W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.55kA
Case: TO247-2
Max. forward voltage: 1.5V
Power dissipation: 166W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 417 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.15 EUR
11+6.84 EUR
12+6.46 EUR
30+6.29 EUR
Mindestbestellmenge: 8
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DSEI30-12A pVersion=0046&contRep=ZT&docId=E2916DEC5E36DDF19A99005056AB752F&compId=92722.pdf?ci_sign=990727ced795f1f61d5fc4ad016abc029ccb1a31
DSEI30-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26A; tube; Ifsm: 200A; TO247-2; 138W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 2.2V
Power dissipation: 138W
Reverse recovery time: 40ns
Technology: FRED
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.23 EUR
16+4.66 EUR
17+4.4 EUR
Mindestbestellmenge: 12
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IXFH40N50Q pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F63820&compId=IXFH40N50Q.pdf?ci_sign=3f4d61ef909d6e752c1d54406498f3c6045e4fe5
IXFH40N50Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.02 EUR
Mindestbestellmenge: 4
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IXTH40N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBC36E59269820&compId=IXTH(T%2CQ)40N50L2.pdf?ci_sign=fb22fbad598fb6bca1335d953b47c9e27b2aa9b2
IXTH40N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTQ40N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBC36E59269820&compId=IXTH(T%2CQ)40N50L2.pdf?ci_sign=fb22fbad598fb6bca1335d953b47c9e27b2aa9b2
IXTQ40N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTT40N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBC36E59269820&compId=IXTH(T%2CQ)40N50L2.pdf?ci_sign=fb22fbad598fb6bca1335d953b47c9e27b2aa9b2
IXTT40N50L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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DSSK40-006B pVersion=0046&contRep=ZT&docId=005056AB82531EE98BEDE1D97E7F98BF&compId=DSSK40-006B.pdf?ci_sign=9bf8f54b3f4471da5521b9ae2a65b7b5d865e2fd
DSSK40-006B
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 20Ax2; TO247-3; Ufmax: 0.5V
Kind of package: tube
Mounting: THT
Max. forward impulse current: 0.5kA
Power dissipation: 150W
Type of diode: Schottky rectifying
Load current: 20A x2
Max. forward voltage: 0.5V
Max. off-state voltage: 60V
Case: TO247-3
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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DSSK40-008B pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB8ABA26A3D8BF&compId=DSSK40-008B.pdf?ci_sign=d6e1d497b4e9caad28525ccc6f0f591b4417d3d9
DSSK40-008B
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 20Ax2; TO247-3; Ufmax: 0.57V
Kind of package: tube
Mounting: THT
Max. forward impulse current: 0.5kA
Power dissipation: 115W
Type of diode: Schottky rectifying
Load current: 20A x2
Max. forward voltage: 0.57V
Max. off-state voltage: 80V
Case: TO247-3
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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IXTJ4N150 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88AEF8FFFD52F13D1&compId=IXTJ4N150.pdf?ci_sign=98054bbf38cae70553bc587ef93497c3257e4fed
IXTJ4N150
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 110W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
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IXTA4N150HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4FFE04D7BF820&compId=IXTA(T)4N150HV.pdf?ci_sign=ec9174563c34e31231ef390b44e76d450e2c55dc
IXTA4N150HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
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IXTH4N150 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494FF820&compId=IXTH4N150.pdf?ci_sign=7ee4dfc0f51419d8a3e85073d6cfaef92c301795
IXTH4N150
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO247-3
On-state resistance: 6Ω
Mounting: THT
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
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IXTT4N150HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4FFE04D7BF820&compId=IXTA(T)4N150HV.pdf?ci_sign=ec9174563c34e31231ef390b44e76d450e2c55dc
IXTT4N150HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO268HV; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO268HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
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DSEI2X30-12B pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF2376DF3A1F5EA&compId=DSEI2X30-12B.pdf?ci_sign=111738f22df8f18aecc3d2682c1007fb4c5ff4ca
DSEI2X30-12B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 27Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.2V
Load current: 27A x2
Semiconductor structure: double independent
Max. forward impulse current: 375A
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+28.43 EUR
10+28.41 EUR
Mindestbestellmenge: 3
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DSEP30-12B pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8E9FA31CD45960C4&compId=DSEP30-12B.pdf?ci_sign=d28e281735b3bfc38bce88f4534d9d13f2a00f49
DSEP30-12B
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Mounting: THT
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 3.75V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 200A
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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PM1206S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3160C7&compId=PM1206.pdf?ci_sign=c09be491d231e3d21eac1f0a3551944d7ccc748d
PM1206S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
Produkt ist nicht verfügbar
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PM1205S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22
PM1205S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
Produkt ist nicht verfügbar
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PM1205STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
Produkt ist nicht verfügbar
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