Foto | Bezeichnung | Hersteller | Beschreibung |
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IXGX82N120B3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 500A Mounting: THT Gate charge: 0.35µC Kind of package: tube Turn-on time: 112ns Turn-off time: 760ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFH12N120P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 543W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Case: TO247-3 Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 543W Gate charge: 103nC |
auf Bestellung 265 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH6N120 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 6A Case: TO247-3 Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 300W Gate charge: 56nC |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEP2X101-04A | IXYS |
![]() Description: Module: diode; double independent; 400V; If: 100Ax2; SOT227B; screw Case: SOT227B Max. off-state voltage: 0.4kV Max. forward voltage: 1.73V Load current: 100A x2 Semiconductor structure: double independent Max. forward impulse current: 1kA Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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DSA30C100HB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO247-3; Ufmax: 0.72V Type of diode: Schottky rectifying Max. off-state voltage: 100V Max. forward impulse current: 340A Semiconductor structure: common cathode; double Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 85W Max. forward voltage: 0.72V Load current: 15A x2 |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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DSA30C45HB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO247-3; Ufmax: 0.62V Type of diode: Schottky rectifying Max. off-state voltage: 45V Max. forward impulse current: 340A Semiconductor structure: common cathode; double Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 85W Max. forward voltage: 0.62V Load current: 15A x2 |
auf Bestellung 262 Stücke: Lieferzeit 14-21 Tag (e) |
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DSA30C60PB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.72V Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward impulse current: 340A Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Heatsink thickness: 1.14...1.39mm Power dissipation: 85W Max. forward voltage: 0.72V Load current: 15A x2 |
auf Bestellung 327 Stücke: Lieferzeit 14-21 Tag (e) |
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DSA30C45PC | IXYS |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape; 85W Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.63V Max. forward impulse current: 340A Kind of package: reel; tape Power dissipation: 85W |
auf Bestellung 690 Stücke: Lieferzeit 14-21 Tag (e) |
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DSA30C200IB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO262; Ufmax: 0.78V Type of diode: Schottky rectifying Max. off-state voltage: 200V Max. forward impulse current: 0.32kA Semiconductor structure: common cathode; double Case: TO262 Mounting: THT Kind of package: tube Power dissipation: 85W Max. forward voltage: 0.78V Load current: 15A x2 |
auf Bestellung 389 Stücke: Lieferzeit 14-21 Tag (e) |
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DSA30C100QB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO3P; Ufmax: 0.72V Type of diode: Schottky rectifying Max. off-state voltage: 100V Max. forward impulse current: 340A Semiconductor structure: common cathode; double Case: TO3P Mounting: THT Kind of package: tube Power dissipation: 85W Max. forward voltage: 0.72V Load current: 15A x2 |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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DSA30C45PB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.63V Type of diode: Schottky rectifying Max. off-state voltage: 45V Max. forward impulse current: 340A Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Heatsink thickness: 1.14...1.39mm Power dissipation: 85W Max. forward voltage: 0.63V Load current: 15A x2 |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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DSA30C100PB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.73V Type of diode: Schottky rectifying Max. off-state voltage: 100V Max. forward impulse current: 340A Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Heatsink thickness: 1.14...1.39mm Power dissipation: 35W Max. forward voltage: 0.73V Load current: 15A x2 |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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DSA30C100PN | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; Ufmax: 0.73V Type of diode: Schottky rectifying Max. off-state voltage: 100V Max. forward impulse current: 340A Semiconductor structure: common cathode; double Case: TO220FP Mounting: THT Kind of package: tube Power dissipation: 35W Max. forward voltage: 0.73V Load current: 15A x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXGP36N60A3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 36A; 220W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 36A Power dissipation: 220W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 80nC Kind of package: tube Turn-on time: 43ns Turn-off time: 1µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CPC1301G | IXYS |
![]() Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; DIP4; 250mV/μs Type of optocoupler: optocoupler Insulation voltage: 5kV Kind of output: Darlington Case: DIP4 Mounting: THT Number of channels: 1 Slew rate: 0.25V/μs Turn-on time: 1µs Turn-off time: 60µs Trigger current: 50mA CTR@If: 1000-8000%@1mA Max. off-state voltage: 5V |
auf Bestellung 419 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1114NTR | IXYS |
![]() Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC Manufacturer series: OptoMOS Operating temperature: -40...85°C Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Control current max.: 50mA Mounting: SMT Case: SOP4 On-state resistance: 2Ω Turn-on time: 2ms Turn-off time: 5ms Body dimensions: 4.09x3.81x2.03mm Kind of output: MOSFET Insulation voltage: 1.5kV Contacts configuration: SPST-NC Max. operating current: 0.4A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CPC2017N | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50000mA; 120mA; 16Ω Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50000mA Max. operating current: 120mA Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: SO8 Operating temperature: -40...85°C Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
CPC2017NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: SO8 Operating temperature: -40...85°C Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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CPC2014N | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.4A Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 2Ω Mounting: SMT Case: SO8 Operating temperature: -40...85°C Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
CPC2014NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.4A Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 2Ω Mounting: SMT Case: SO8 Operating temperature: -40...85°C Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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DSI30-12AS-TUB | IXYS |
![]() Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A Case: D2PAK Mounting: SMD Kind of package: tube Max. forward voltage: 1.25V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 255A Power dissipation: 160W Type of diode: rectifying Max. off-state voltage: 1.2kV |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
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DSS6-0045AS-TUB | IXYS |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 6A; tube; 50W Case: DPAK Mounting: SMD Kind of package: tube Max. forward voltage: 0.5V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 120A Power dissipation: 50W Type of diode: Schottky rectifying Max. off-state voltage: 45V |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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DMA30IM1600PZ-TUB | IXYS |
![]() Description: Diode: rectifying; SMD; 1.6kV; 30A; TO263ABHV; Ufmax: 1.26V; 210W Case: TO263ABHV Mounting: SMD Kind of package: tube Max. forward voltage: 1.26V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 255A Power dissipation: 210W Type of diode: rectifying Max. off-state voltage: 1.6kV |
auf Bestellung 76 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEP60-06AT-TUB | IXYS |
![]() Description: Diode: rectifying; SMD; 600V; 60A; 35ns; D3PAK; Ufmax: 1.39V; 330W Case: D3PAK Mounting: SMD Max. forward voltage: 1.39V Load current: 60A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 0.6kA Power dissipation: 330W Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ Max. off-state voltage: 0.6kV |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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DSP8-08S-TUB | IXYS |
![]() Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A Case: D2PAK Mounting: SMD Kind of package: tube Max. forward voltage: 1.08V Load current: 8A Semiconductor structure: double series Max. forward impulse current: 120A Power dissipation: 100W Type of diode: rectifying Max. off-state voltage: 0.8kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DSP8-12S-TUB | IXYS |
![]() Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A Case: D2PAK Mounting: SMD Kind of package: tube Max. forward voltage: 1.08V Load current: 8A Semiconductor structure: double series Max. forward impulse current: 120A Power dissipation: 100W Type of diode: rectifying Max. off-state voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DSP8-08AS-TUB | IXYS |
![]() Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A Case: D2PAK Mounting: SMD Kind of package: tube Max. forward voltage: 1.08V Load current: 8A Semiconductor structure: double series Max. forward impulse current: 120A Power dissipation: 100W Type of diode: rectifying Max. off-state voltage: 0.8kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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DSI30-08AS-TUB | IXYS |
![]() Description: Diode: rectifying; SMD; 800V; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A Case: D2PAK Mounting: SMD Kind of package: tube Max. forward voltage: 1.25V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 255A Power dissipation: 160W Type of diode: rectifying Max. off-state voltage: 0.8kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DSP45-12AZ-TUB | IXYS |
![]() Description: Diode: rectifying; SMD; 1.2kV; 45A; TO268AAHV; Ufmax: 1.23V; 270W Case: TO268AAHV Mounting: SMD Kind of package: tube Max. forward voltage: 1.23V Load current: 45A Semiconductor structure: double series Max. forward impulse current: 410A Power dissipation: 270W Type of diode: rectifying Max. off-state voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
DSEP12-12BZ-TUB | IXYS |
![]() Description: Diode: rectifying; SMD; 1.2kV; 12A; 35ns; TO263ABHV; Ufmax: 2.06V Case: TO263ABHV Mounting: SMD Kind of package: tube Max. forward voltage: 2.06V Load current: 12A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 90A Power dissipation: 95W Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ Max. off-state voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DCG20B650LB-TUB | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; tube Case: SMPD-B Kind of package: tube Max. forward voltage: 2V Load current: 16A Electrical mounting: SMT Features of semiconductor devices: Schottky Technology: SiC Type of bridge rectifier: single-phase Max. off-state voltage: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DSEI36-06AS-TUB | IXYS |
![]() Description: Diode: rectifying; SMD; 600V; 37A; 35ns; TO263AB; Ufmax: 1.4V; 125W Case: TO263AB Mounting: SMD Kind of package: tube Max. forward voltage: 1.4V Load current: 37A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 0.3kA Power dissipation: 125W Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Max. off-state voltage: 0.6kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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DSI30-16AS-TUB | IXYS |
![]() Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A Case: D2PAK Mounting: SMD Kind of package: tube Max. forward voltage: 1.25V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 255A Power dissipation: 160W Type of diode: rectifying Max. off-state voltage: 1.6kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
DSP45-16AZ-TUB | IXYS |
![]() Description: Diode: rectifying; SMD; 1.6kV; 45A; TO268AAHV; Ufmax: 1.23V; 270W Case: TO268AAHV Mounting: SMD Kind of package: tube Max. forward voltage: 1.23V Load current: 45A Semiconductor structure: double series Max. forward impulse current: 0.48kA Power dissipation: 270W Type of diode: rectifying Max. off-state voltage: 1.6kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DSS10-01AS-TUB | IXYS |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10A; tube; 90W Case: D2PAK Mounting: SMD Kind of package: tube Max. forward voltage: 0.66V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 120A Power dissipation: 90W Type of diode: Schottky rectifying Max. off-state voltage: 100V Max. load current: 35A |
Produkt ist nicht verfügbar |
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DAA10P1800PZ-TUB | IXYS |
![]() Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.53V; 100W Case: TO263ABHV Mounting: SMD Kind of package: tube Max. forward voltage: 1.53V Load current: 10A Semiconductor structure: double series Max. forward impulse current: 150A Power dissipation: 100W Type of diode: rectifying Features of semiconductor devices: avalanche breakdown effect Max. off-state voltage: 1.8kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
DMA90U1800LB-TUB | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A Case: SMPD Max. forward voltage: 1.26V Load current: 90A Max. forward impulse current: 350A Electrical mounting: SMT Type of bridge rectifier: three-phase Max. off-state voltage: 1.8kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DNA30E2200PZ-TUB | IXYS |
![]() Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W Case: TO263ABHV Mounting: SMD Kind of package: tube Max. forward voltage: 1.24V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 315A Power dissipation: 210W Type of diode: rectifying Features of semiconductor devices: high voltage Max. off-state voltage: 2.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DHG40B1200LB-TUB | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 34A; Ifsm: 150A Case: SMPD-B Kind of package: tube Max. forward voltage: 3.15V Load current: 34A Max. forward impulse current: 150A Electrical mounting: SMT Technology: Sonic FRD™ Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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CPC3982TTR | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23 Mounting: SMD Drain-source voltage: 800V Drain current: 0.15A On-state resistance: 380Ω Type of transistor: N-MOSFET Power dissipation: 0.4W Polarisation: unipolar Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±15V Case: SOT23 |
auf Bestellung 2851 Stücke: Lieferzeit 14-21 Tag (e) |
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MCO500-18io1 | IXYS |
![]() Description: Module: thyristor; single thyristor; 1.8kV; 560A; Y1; Ufmax: 1.27V Type of semiconductor module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.8kV Load current: 560A Case: Y1 Max. forward voltage: 1.27V Gate current: 300/400mA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk |
Produkt ist nicht verfügbar |
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MDO500-18N1 | IXYS |
![]() Description: Module: diode; single diode; 1.8kV; If: 560A; Y1-CU; Ufmax: 0.98V Type of semiconductor module: diode Semiconductor structure: single diode Max. off-state voltage: 1.8kV Load current: 560A Case: Y1-CU Max. forward voltage: 0.98V Max. forward impulse current: 15kA Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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CPC1908J | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 3500mA; max.60VAC Case: i4-pac Mounting: THT Operating temperature: -40...85°C Kind of output: MOSFET Max. operating current: 3.5A Turn-on time: 20ms Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Control current max.: 100mA Manufacturer series: OptoMOS Body dimensions: 19.91x20.88x5.03mm On-state resistance: 0.3Ω Turn-off time: 5ms Insulation voltage: 2.5kV Contacts configuration: SPST-NO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CPC3902ZTR | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.8W Case: SOT223 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 250V Drain current: 0.4A On-state resistance: 2.5Ω Kind of channel: depletion Gate-source voltage: ±15V |
auf Bestellung 191 Stücke: Lieferzeit 14-21 Tag (e) |
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VUO80-16NO1 | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 80A; Ifsm: 600A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 80A Max. forward impulse current: 0.6kA Electrical mounting: FASTON connectors Version: module Max. forward voltage: 1.14V Leads: connectors Case: V1-A-Pack Mechanical mounting: screw Leads dimensions: 2x0.5mm |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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MMIX1X100N60B3H1 | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 600V; 68A; 400W; SMPD Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 400W Kind of package: tube Gate charge: 143nC Technology: BiMOSFET™; GenX3™; XPT™ Mounting: SMD Case: SMPD Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 68A Pulsed collector current: 440A Turn-on time: 92s |
Produkt ist nicht verfügbar |
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IXTH16N20D2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns Mounting: THT Kind of package: tube Case: TO247-3 Reverse recovery time: 607ns On-state resistance: 80mΩ Type of transistor: N-MOSFET Power dissipation: 695W Polarisation: unipolar Kind of channel: depletion Drain-source voltage: 200V Drain current: 16A |
Produkt ist nicht verfügbar |
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IXTH16N50D2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns Mounting: THT Kind of package: tube Case: TO247-3 Reverse recovery time: 130ns On-state resistance: 0.3Ω Type of transistor: N-MOSFET Power dissipation: 695W Polarisation: unipolar Kind of channel: depletion Drain-source voltage: 500V Drain current: 16A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTH16P60P | IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Reverse recovery time: 440ns On-state resistance: 720mΩ Type of transistor: P-MOSFET Power dissipation: 460W Polarisation: unipolar Gate charge: 92nC Technology: PolarP™ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: -600V Drain current: -16A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FDA217 | IXYS |
![]() Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2 Mounting: THT Operating temperature: -40...85°C Case: DIP8 Type of integrated circuit: driver Number of channels: 2 Kind of package: tube Kind of integrated circuit: MOSFET gate driver |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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IXKH47N60C | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 290W Case: TO247-3 On-state resistance: 70mΩ Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: super junction coolmos |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
DSA120X200LB-TRR | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W Load current: 65A x2 Semiconductor structure: double independent Max. forward impulse current: 700A Power dissipation: 185W Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: SMPD Max. off-state voltage: 200V Max. forward voltage: 0.67V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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CPC1966YX8 | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase Type of relay: solid state Control current max.: 50mA Max. operating current: 3A Switched voltage: max. 800V AC Relay variant: 1-phase Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV Turn-on time: 20µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTP3N50D2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Case: TO220AB On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: depletion Power dissipation: 125W Gate charge: 1.07µC Reverse recovery time: 24ns |
auf Bestellung 277 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTY3N50P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Case: TO252 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Power dissipation: 70W Gate charge: 9.3nC Technology: Polar™ Reverse recovery time: 400ns |
auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA3N50P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Case: TO263 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Power dissipation: 70W Gate charge: 9.3nC Technology: Polar™ Reverse recovery time: 400ns |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA3N50D2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Case: TO263 On-state resistance: 1.5Ω Mounting: SMD Kind of package: tube Kind of channel: depletion Power dissipation: 125W Gate charge: 1.07µC Reverse recovery time: 24ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXDF602PI | IXYS |
![]() Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting; non-inverting Turn-on time: 93ns Turn-off time: 93ns |
auf Bestellung 1053 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDI602PI | IXYS |
![]() Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-on time: 93ns Turn-off time: 93ns |
auf Bestellung 979 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTN32P60P | IXYS |
![]() Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A Case: SOT227B Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Gate charge: 196nC Technology: PolarP™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: -96A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Reverse recovery time: 480ns Drain-source voltage: -600V Drain current: -32A On-state resistance: 0.35Ω Power dissipation: 890W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IXGX82N120B3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFH12N120P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 543W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 543W
Gate charge: 103nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 543W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 543W
Gate charge: 103nC
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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4+ | 19.02 EUR |
5+ | 14.97 EUR |
30+ | 14.40 EUR |
IXFH6N120 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 300W
Gate charge: 56nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 300W
Gate charge: 56nC
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.94 EUR |
7+ | 10.74 EUR |
8+ | 10.15 EUR |
DSEP2X101-04A |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 100Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.73V
Load current: 100A x2
Semiconductor structure: double independent
Max. forward impulse current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 100Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.73V
Load current: 100A x2
Semiconductor structure: double independent
Max. forward impulse current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 46.88 EUR |
10+ | 46.68 EUR |
DSA30C100HB |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO247-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward impulse current: 340A
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 85W
Max. forward voltage: 0.72V
Load current: 15A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO247-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward impulse current: 340A
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 85W
Max. forward voltage: 0.72V
Load current: 15A x2
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.79 EUR |
21+ | 3.43 EUR |
27+ | 2.72 EUR |
28+ | 2.57 EUR |
DSA30C45HB |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO247-3; Ufmax: 0.62V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 340A
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 85W
Max. forward voltage: 0.62V
Load current: 15A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO247-3; Ufmax: 0.62V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 340A
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 85W
Max. forward voltage: 0.62V
Load current: 15A x2
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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59+ | 1.23 EUR |
60+ | 1.20 EUR |
63+ | 1.14 EUR |
66+ | 1.09 EUR |
120+ | 1.06 EUR |
DSA30C60PB |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.72V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 340A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Max. forward voltage: 0.72V
Load current: 15A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.72V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 340A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Max. forward voltage: 0.72V
Load current: 15A x2
auf Bestellung 327 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.63 EUR |
49+ | 1.47 EUR |
55+ | 1.30 EUR |
56+ | 1.29 EUR |
59+ | 1.22 EUR |
61+ | 1.17 EUR |
DSA30C45PC |
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Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape; 85W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.63V
Max. forward impulse current: 340A
Kind of package: reel; tape
Power dissipation: 85W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape; 85W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.63V
Max. forward impulse current: 340A
Kind of package: reel; tape
Power dissipation: 85W
auf Bestellung 690 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
105+ | 0.69 EUR |
109+ | 0.66 EUR |
114+ | 0.63 EUR |
DSA30C200IB |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO262; Ufmax: 0.78V
Type of diode: Schottky rectifying
Max. off-state voltage: 200V
Max. forward impulse current: 0.32kA
Semiconductor structure: common cathode; double
Case: TO262
Mounting: THT
Kind of package: tube
Power dissipation: 85W
Max. forward voltage: 0.78V
Load current: 15A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO262; Ufmax: 0.78V
Type of diode: Schottky rectifying
Max. off-state voltage: 200V
Max. forward impulse current: 0.32kA
Semiconductor structure: common cathode; double
Case: TO262
Mounting: THT
Kind of package: tube
Power dissipation: 85W
Max. forward voltage: 0.78V
Load current: 15A x2
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
97+ | 0.74 EUR |
100+ | 0.72 EUR |
105+ | 0.69 EUR |
109+ | 0.66 EUR |
250+ | 0.63 EUR |
DSA30C100QB |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO3P; Ufmax: 0.72V
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward impulse current: 340A
Semiconductor structure: common cathode; double
Case: TO3P
Mounting: THT
Kind of package: tube
Power dissipation: 85W
Max. forward voltage: 0.72V
Load current: 15A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO3P; Ufmax: 0.72V
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward impulse current: 340A
Semiconductor structure: common cathode; double
Case: TO3P
Mounting: THT
Kind of package: tube
Power dissipation: 85W
Max. forward voltage: 0.72V
Load current: 15A x2
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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23+ | 3.25 EUR |
25+ | 2.95 EUR |
31+ | 2.33 EUR |
33+ | 2.20 EUR |
DSA30C45PB |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.63V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 340A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Max. forward voltage: 0.63V
Load current: 15A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.63V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 340A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Max. forward voltage: 0.63V
Load current: 15A x2
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.21 EUR |
DSA30C100PB |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.73V
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward impulse current: 340A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 35W
Max. forward voltage: 0.73V
Load current: 15A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.73V
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward impulse current: 340A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 35W
Max. forward voltage: 0.73V
Load current: 15A x2
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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2+ | 35.75 EUR |
DSA30C100PN |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; Ufmax: 0.73V
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward impulse current: 340A
Semiconductor structure: common cathode; double
Case: TO220FP
Mounting: THT
Kind of package: tube
Power dissipation: 35W
Max. forward voltage: 0.73V
Load current: 15A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; Ufmax: 0.73V
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward impulse current: 340A
Semiconductor structure: common cathode; double
Case: TO220FP
Mounting: THT
Kind of package: tube
Power dissipation: 35W
Max. forward voltage: 0.73V
Load current: 15A x2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXGP36N60A3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 220W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 1µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 220W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 1µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1301G |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; DIP4; 250mV/μs
Type of optocoupler: optocoupler
Insulation voltage: 5kV
Kind of output: Darlington
Case: DIP4
Mounting: THT
Number of channels: 1
Slew rate: 0.25V/μs
Turn-on time: 1µs
Turn-off time: 60µs
Trigger current: 50mA
CTR@If: 1000-8000%@1mA
Max. off-state voltage: 5V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; DIP4; 250mV/μs
Type of optocoupler: optocoupler
Insulation voltage: 5kV
Kind of output: Darlington
Case: DIP4
Mounting: THT
Number of channels: 1
Slew rate: 0.25V/μs
Turn-on time: 1µs
Turn-off time: 60µs
Trigger current: 50mA
CTR@If: 1000-8000%@1mA
Max. off-state voltage: 5V
auf Bestellung 419 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.79 EUR |
61+ | 1.17 EUR |
64+ | 1.13 EUR |
68+ | 1.06 EUR |
69+ | 1.04 EUR |
100+ | 1.03 EUR |
CPC1114NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
Case: SOP4
On-state resistance: 2Ω
Turn-on time: 2ms
Turn-off time: 5ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NC
Max. operating current: 0.4A
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
Case: SOP4
On-state resistance: 2Ω
Turn-on time: 2ms
Turn-off time: 5ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NC
Max. operating current: 0.4A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC2017N |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50000mA; 120mA; 16Ω
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50000mA
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50000mA; 120mA; 16Ω
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50000mA
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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CPC2017NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC2014N |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC2014NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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DSI30-12AS-TUB |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 255A
Power dissipation: 160W
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 255A
Power dissipation: 160W
Type of diode: rectifying
Max. off-state voltage: 1.2kV
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.10 EUR |
31+ | 2.35 EUR |
33+ | 2.23 EUR |
50+ | 2.22 EUR |
100+ | 2.14 EUR |
DSS6-0045AS-TUB |
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Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 6A; tube; 50W
Case: DPAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 0.5V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Power dissipation: 50W
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 6A; tube; 50W
Case: DPAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 0.5V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Power dissipation: 50W
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
DMA30IM1600PZ-TUB |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; TO263ABHV; Ufmax: 1.26V; 210W
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.26V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 255A
Power dissipation: 210W
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; TO263ABHV; Ufmax: 1.26V; 210W
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.26V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 255A
Power dissipation: 210W
Type of diode: rectifying
Max. off-state voltage: 1.6kV
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.15 EUR |
26+ | 2.83 EUR |
30+ | 2.39 EUR |
32+ | 2.25 EUR |
DSEP60-06AT-TUB |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 60A; 35ns; D3PAK; Ufmax: 1.39V; 330W
Case: D3PAK
Mounting: SMD
Max. forward voltage: 1.39V
Load current: 60A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 0.6kA
Power dissipation: 330W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 0.6kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 60A; 35ns; D3PAK; Ufmax: 1.39V; 330W
Case: D3PAK
Mounting: SMD
Max. forward voltage: 1.39V
Load current: 60A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 0.6kA
Power dissipation: 330W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 0.6kV
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 7.95 EUR |
DSP8-08S-TUB |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.08V
Load current: 8A
Semiconductor structure: double series
Max. forward impulse current: 120A
Power dissipation: 100W
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.08V
Load current: 8A
Semiconductor structure: double series
Max. forward impulse current: 120A
Power dissipation: 100W
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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DSP8-12S-TUB |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.08V
Load current: 8A
Semiconductor structure: double series
Max. forward impulse current: 120A
Power dissipation: 100W
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.08V
Load current: 8A
Semiconductor structure: double series
Max. forward impulse current: 120A
Power dissipation: 100W
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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DSP8-08AS-TUB |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.08V
Load current: 8A
Semiconductor structure: double series
Max. forward impulse current: 120A
Power dissipation: 100W
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.08V
Load current: 8A
Semiconductor structure: double series
Max. forward impulse current: 120A
Power dissipation: 100W
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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DSI30-08AS-TUB |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 255A
Power dissipation: 160W
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 255A
Power dissipation: 160W
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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DSP45-12AZ-TUB |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 45A; TO268AAHV; Ufmax: 1.23V; 270W
Case: TO268AAHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: double series
Max. forward impulse current: 410A
Power dissipation: 270W
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 45A; TO268AAHV; Ufmax: 1.23V; 270W
Case: TO268AAHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: double series
Max. forward impulse current: 410A
Power dissipation: 270W
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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DSEP12-12BZ-TUB |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 35ns; TO263ABHV; Ufmax: 2.06V
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 2.06V
Load current: 12A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 90A
Power dissipation: 95W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 1.2kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 35ns; TO263ABHV; Ufmax: 2.06V
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 2.06V
Load current: 12A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 90A
Power dissipation: 95W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 1.2kV
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DCG20B650LB-TUB |
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; tube
Case: SMPD-B
Kind of package: tube
Max. forward voltage: 2V
Load current: 16A
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Technology: SiC
Type of bridge rectifier: single-phase
Max. off-state voltage: 650V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; tube
Case: SMPD-B
Kind of package: tube
Max. forward voltage: 2V
Load current: 16A
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Technology: SiC
Type of bridge rectifier: single-phase
Max. off-state voltage: 650V
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DSEI36-06AS-TUB |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 37A; 35ns; TO263AB; Ufmax: 1.4V; 125W
Case: TO263AB
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.4V
Load current: 37A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 0.3kA
Power dissipation: 125W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Max. off-state voltage: 0.6kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 37A; 35ns; TO263AB; Ufmax: 1.4V; 125W
Case: TO263AB
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.4V
Load current: 37A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 0.3kA
Power dissipation: 125W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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DSI30-16AS-TUB |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 255A
Power dissipation: 160W
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 255A
Power dissipation: 160W
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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DSP45-16AZ-TUB |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 45A; TO268AAHV; Ufmax: 1.23V; 270W
Case: TO268AAHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: double series
Max. forward impulse current: 0.48kA
Power dissipation: 270W
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 45A; TO268AAHV; Ufmax: 1.23V; 270W
Case: TO268AAHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: double series
Max. forward impulse current: 0.48kA
Power dissipation: 270W
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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DSS10-01AS-TUB |
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Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10A; tube; 90W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Power dissipation: 90W
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. load current: 35A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10A; tube; 90W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Power dissipation: 90W
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. load current: 35A
Produkt ist nicht verfügbar
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DAA10P1800PZ-TUB |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.53V; 100W
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.53V
Load current: 10A
Semiconductor structure: double series
Max. forward impulse current: 150A
Power dissipation: 100W
Type of diode: rectifying
Features of semiconductor devices: avalanche breakdown effect
Max. off-state voltage: 1.8kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.53V; 100W
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.53V
Load current: 10A
Semiconductor structure: double series
Max. forward impulse current: 150A
Power dissipation: 100W
Type of diode: rectifying
Features of semiconductor devices: avalanche breakdown effect
Max. off-state voltage: 1.8kV
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DMA90U1800LB-TUB |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A
Case: SMPD
Max. forward voltage: 1.26V
Load current: 90A
Max. forward impulse current: 350A
Electrical mounting: SMT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A
Case: SMPD
Max. forward voltage: 1.26V
Load current: 90A
Max. forward impulse current: 350A
Electrical mounting: SMT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Produkt ist nicht verfügbar
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DNA30E2200PZ-TUB |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.24V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 315A
Power dissipation: 210W
Type of diode: rectifying
Features of semiconductor devices: high voltage
Max. off-state voltage: 2.2kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.24V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 315A
Power dissipation: 210W
Type of diode: rectifying
Features of semiconductor devices: high voltage
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
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DHG40B1200LB-TUB |
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Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 34A; Ifsm: 150A
Case: SMPD-B
Kind of package: tube
Max. forward voltage: 3.15V
Load current: 34A
Max. forward impulse current: 150A
Electrical mounting: SMT
Technology: Sonic FRD™
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 34A; Ifsm: 150A
Case: SMPD-B
Kind of package: tube
Max. forward voltage: 3.15V
Load current: 34A
Max. forward impulse current: 150A
Electrical mounting: SMT
Technology: Sonic FRD™
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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CPC3982TTR |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Mounting: SMD
Drain-source voltage: 800V
Drain current: 0.15A
On-state resistance: 380Ω
Type of transistor: N-MOSFET
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Mounting: SMD
Drain-source voltage: 800V
Drain current: 0.15A
On-state resistance: 380Ω
Type of transistor: N-MOSFET
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Case: SOT23
auf Bestellung 2851 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
155+ | 0.46 EUR |
207+ | 0.35 EUR |
220+ | 0.33 EUR |
MCO500-18io1 |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 560A; Y1; Ufmax: 1.27V
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 560A
Case: Y1
Max. forward voltage: 1.27V
Gate current: 300/400mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 560A; Y1; Ufmax: 1.27V
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 560A
Case: Y1
Max. forward voltage: 1.27V
Gate current: 300/400mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Produkt ist nicht verfügbar
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MDO500-18N1 |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 560A; Y1-CU; Ufmax: 0.98V
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.8kV
Load current: 560A
Case: Y1-CU
Max. forward voltage: 0.98V
Max. forward impulse current: 15kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 560A; Y1-CU; Ufmax: 0.98V
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.8kV
Load current: 560A
Case: Y1-CU
Max. forward voltage: 0.98V
Max. forward impulse current: 15kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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CPC1908J |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 3500mA; max.60VAC
Case: i4-pac
Mounting: THT
Operating temperature: -40...85°C
Kind of output: MOSFET
Max. operating current: 3.5A
Turn-on time: 20ms
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 100mA
Manufacturer series: OptoMOS
Body dimensions: 19.91x20.88x5.03mm
On-state resistance: 0.3Ω
Turn-off time: 5ms
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 3500mA; max.60VAC
Case: i4-pac
Mounting: THT
Operating temperature: -40...85°C
Kind of output: MOSFET
Max. operating current: 3.5A
Turn-on time: 20ms
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 100mA
Manufacturer series: OptoMOS
Body dimensions: 19.91x20.88x5.03mm
On-state resistance: 0.3Ω
Turn-off time: 5ms
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
Produkt ist nicht verfügbar
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CPC3902ZTR |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 250V
Drain current: 0.4A
On-state resistance: 2.5Ω
Kind of channel: depletion
Gate-source voltage: ±15V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 250V
Drain current: 0.4A
On-state resistance: 2.5Ω
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
57+ | 1.27 EUR |
84+ | 0.86 EUR |
152+ | 0.47 EUR |
161+ | 0.44 EUR |
VUO80-16NO1 |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 38.67 EUR |
24+ | 38.04 EUR |
MMIX1X100N60B3H1 |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 68A; 400W; SMPD
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 400W
Kind of package: tube
Gate charge: 143nC
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 68A
Pulsed collector current: 440A
Turn-on time: 92s
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 68A; 400W; SMPD
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 400W
Kind of package: tube
Gate charge: 143nC
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 68A
Pulsed collector current: 440A
Turn-on time: 92s
Produkt ist nicht verfügbar
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IXTH16N20D2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 607ns
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 695W
Polarisation: unipolar
Kind of channel: depletion
Drain-source voltage: 200V
Drain current: 16A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 607ns
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 695W
Polarisation: unipolar
Kind of channel: depletion
Drain-source voltage: 200V
Drain current: 16A
Produkt ist nicht verfügbar
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IXTH16N50D2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 130ns
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 695W
Polarisation: unipolar
Kind of channel: depletion
Drain-source voltage: 500V
Drain current: 16A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 130ns
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 695W
Polarisation: unipolar
Kind of channel: depletion
Drain-source voltage: 500V
Drain current: 16A
Produkt ist nicht verfügbar
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IXTH16P60P |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 440ns
On-state resistance: 720mΩ
Type of transistor: P-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -600V
Drain current: -16A
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 440ns
On-state resistance: 720mΩ
Type of transistor: P-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -600V
Drain current: -16A
Produkt ist nicht verfügbar
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FDA217 |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
Type of integrated circuit: driver
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: MOSFET gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
Type of integrated circuit: driver
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: MOSFET gate driver
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.94 EUR |
22+ | 3.36 EUR |
23+ | 3.17 EUR |
IXKH47N60C |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
Im Einkaufswagen
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DSA120X200LB-TRR |
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W
Load current: 65A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
Power dissipation: 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. off-state voltage: 200V
Max. forward voltage: 0.67V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W
Load current: 65A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
Power dissipation: 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. off-state voltage: 200V
Max. forward voltage: 0.67V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1966YX8 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Turn-on time: 20µs
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Turn-on time: 20µs
Produkt ist nicht verfügbar
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IXTP3N50D2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Power dissipation: 125W
Gate charge: 1.07µC
Reverse recovery time: 24ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Power dissipation: 125W
Gate charge: 1.07µC
Reverse recovery time: 24ns
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.35 EUR |
20+ | 3.65 EUR |
21+ | 3.45 EUR |
250+ | 3.30 EUR |
IXTY3N50P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 70W
Gate charge: 9.3nC
Technology: Polar™
Reverse recovery time: 400ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 70W
Gate charge: 9.3nC
Technology: Polar™
Reverse recovery time: 400ns
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
104+ | 0.69 EUR |
IXTA3N50P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 70W
Gate charge: 9.3nC
Technology: Polar™
Reverse recovery time: 400ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 70W
Gate charge: 9.3nC
Technology: Polar™
Reverse recovery time: 400ns
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.15 EUR |
IXTA3N50D2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO263
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Power dissipation: 125W
Gate charge: 1.07µC
Reverse recovery time: 24ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO263
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Power dissipation: 125W
Gate charge: 1.07µC
Reverse recovery time: 24ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXDF602PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 1053 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.29 EUR |
52+ | 1.40 EUR |
68+ | 1.06 EUR |
72+ | 1.00 EUR |
100+ | 0.97 EUR |
IXDI602PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 979 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.73 EUR |
43+ | 1.67 EUR |
70+ | 1.03 EUR |
74+ | 0.97 EUR |
500+ | 0.93 EUR |
IXTN32P60P |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Case: SOT227B
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: -96A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Power dissipation: 890W
Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Case: SOT227B
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: -96A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Power dissipation: 890W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH