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MCC255-18io1 MCC255-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B9B9E8F0D60680C4&compId=MCC255-18io1.pdf?ci_sign=c0cb79c28dbaf2bf7900eca875739c56fa1974f9 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V
Kind of package: bulk
Case: Y1-CU
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.08V
Load current: 250A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 7.82kA
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MCC255-12io1 MCC255-12io1 IXYS MCC255-12io1.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 250A; Y1; Ufmax: 1.36V
Kind of package: bulk
Case: Y1
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.36V
Load current: 250A
Max. off-state voltage: 1.2kV
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MCMA260PD1600YB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80F1711D0700C4&compId=MCMA260PD1600YB.pdf?ci_sign=6ad821fdb3a09984a07cda7c076290735039285b pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Case: Y4-M6
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.81V
Max. forward voltage: 1.06V
Load current: 260A
Max. load current: 408A
Max. forward impulse current: 8.3kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
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CPC1977J CPC1977J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B100C7&compId=CPC1977.pdf?ci_sign=8bb34dad3fc46c0ba752492770e97b8051520cb2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 20ms
Max. operating current: 1.25A
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 100mA
On-state resistance: 1Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: i4-pac
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
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IXFP50N20X3 IXFP50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
auf Bestellung 10 Stücke:
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10+7.15 EUR
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IXFA50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
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IXBOD1-21R IXBOD1-21R IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4 Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; bulk; 2.1kV
Mounting: THT
Max. load current: 0.9A
Breakover voltage: 2.1kV
Case: BOD
Type of thyristor: BOD x3
Kind of package: bulk
auf Bestellung 9 Stücke:
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IXBT16N170A IXBT16N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD04849F0DFB820&compId=IXBH(T)16N170A.pdf?ci_sign=05b45852ed6e7230aca07a9203cce83faedf4e33 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
auf Bestellung 8 Stücke:
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5+14.63 EUR
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IXBT16N170AHV IXBT16N170AHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD01F9B98FE5820&compId=IXBA16N170AHV.pdf?ci_sign=95336b0cb3303bf228c8eebd741f5683b4c5f35c Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Kind of package: tube
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
auf Bestellung 18 Stücke:
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5+14.63 EUR
10+14.07 EUR
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DNA30E2200PA DNA30E2200PA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF00570FE87D8BF&compId=DNA30E2200PA.pdf?ci_sign=b201c089b1d3fcd918ecc29f65e04c90bb799031 Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Case: TO220AC
Power dissipation: 210W
Mounting: THT
Semiconductor structure: single diode
Type of diode: rectifying
Kind of package: tube
auf Bestellung 396 Stücke:
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14+5.22 EUR
20+3.69 EUR
21+3.47 EUR
50+3.4 EUR
100+3.35 EUR
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DNA30E2200PZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4707EF53EE0C4&compId=DNA30E2200PZ.pdf?ci_sign=15fe4b8ac3db46205a74e29bc7d07c8d2bc18514 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Case: TO263ABHV
Power dissipation: 210W
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Type of diode: rectifying
Kind of package: tube
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DNA30EM2200PZ-TUB DNA30EM2200PZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB482F0388180C4&compId=DNA30EM2200PZ.pdf?ci_sign=3857f564e83beb1af70b0ce4a3621992dc06f0fa Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Case: TO263ABHV
Power dissipation: 210W
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Type of diode: rectifying
Kind of package: tube
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MDNA600P2200PTSF IXYS Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Max. off-state voltage: 2.2kV
Load current: 600A
Max. forward impulse current: 15kA
Electrical mounting: Press-Fit
Case: SimBus F
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
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MDNA300P2200PTSF IXYS Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Max. off-state voltage: 2.2kV
Load current: 300A
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Case: SimBus F
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
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MDNA425P2200PTSF IXYS Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 2.2kV
Load current: 425A
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Case: SimBus F
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
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MDNA660U2200PTEH IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBDA13A53CBB8A0C7&compId=MDNA660U2200PTEH.pdf?ci_sign=c7490321ee76c4d350619996c90c0e64c2284ada Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 2.2kV
Load current: 660A
Max. forward impulse current: 5kA
Electrical mounting: Press-Fit
Version: module
Max. forward voltage: 1.28V
Case: E3-Pack
Mechanical mounting: screw
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MCNA120UI2200PED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: 3-phase diode-thyristor bridge; boost chopper
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 150A
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FUO50-16N FUO50-16N IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA83C017CDAAE143&compId=FUO50-16N.pdf?ci_sign=6122936eac9983a4efa3876aa099ecd7a7887436 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 50A
Max. forward impulse current: 270A
Electrical mounting: THT
Max. forward voltage: 1.04V
Case: ISOPLUS i4-pac™ x024a
auf Bestellung 174 Stücke:
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4+22.18 EUR
5+21.89 EUR
10+21.32 EUR
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IXSH80N120L2KHV IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1FD099C55B7758D1E0E1&compId=IXSH80N120L2KHV.pdf?ci_sign=be010a8c633b27bff592167438e90ea2234da827 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -10...23V
Gate charge: 135nC
On-state resistance: 58mΩ
Drain current: 58A
Power dissipation: 395W
Drain-source voltage: 1.2kV
Pulsed drain current: 198A
Polarisation: unipolar
Kind of channel: enhancement
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IXGN400N60B3 IXGN400N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2F019CE41B820&compId=IXGN400N60B3.pdf?ci_sign=67c9041076c20f7cbbce35e6237791751933bdc6 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Pulsed collector current: 1.5kA
Max. off-state voltage: 0.6kV
Case: SOT227B
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IXGK400N30A3 IXGK400N30A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE928C3F5451820&compId=IXGK(X)400N30A3.pdf?ci_sign=620a1db92159c5e67eff60170c2cd1cd5ba80b7c Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 560nC
Turn-on time: 0.1µs
Turn-off time: 565ns
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Collector-emitter voltage: 300V
Pulsed collector current: 1.2kA
Case: TO264
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IXGN400N60A3 IXGN400N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2ECD2BBEEB820&compId=IXGN400N60A3.pdf?ci_sign=8a21fca6ac60404c1a68085a303adb5a72c3c627 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 190A
Power dissipation: 830W
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Case: SOT227B
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MIXG240W1200TEH IXYS media?resourcetype=datasheets&amp;itemid=da34aa4f-918f-4eb9-8e52-be6c5ad3ffe1&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg240w1200teh%2520datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
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IXGP30N120B3 IXGP30N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC94053C44F820&compId=IXGA(H%2CP)30N120B3.pdf?ci_sign=bccf7f842442b5dd94ada4fd3560ea2bc2b9462c Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
auf Bestellung 20 Stücke:
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6+13.58 EUR
11+6.51 EUR
12+6.15 EUR
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IXGP42N30C3 IXYS littelfuse_discrete_igbts_pt_ixgh42n30c3_datasheet.pdf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO220-3
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 300V
Collector current: 42A
Power dissipation: 223W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 84A
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Turn-on time: 21ns
Turn-off time: 113ns
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LCB110 LCB110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Case: DIP6
Manufacturer series: OptoMOS
Kind of output: MOSFET
Type of relay: solid state
Turn-on time: 3ms
Turn-off time: 3ms
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
auf Bestellung 450 Stücke:
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23+3.25 EUR
27+2.73 EUR
28+2.59 EUR
250+2.57 EUR
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LCB716S LCB716S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A50E811E2158BF&compId=LCB716.pdf?ci_sign=aba403940ef2efda7ea85d724f43ac038f1cdb2c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 2Ω
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP6
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-on time: 3ms
Turn-off time: 3ms
auf Bestellung 115 Stücke:
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9+8.72 EUR
15+4.8 EUR
16+4.55 EUR
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LCB717 LCB717 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86CE0C7&compId=LCB717.pdf?ci_sign=87a05df09da7b5fc5d647e258aa9681fbe313cf2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
On-state resistance: 0.3Ω
Switched voltage: max. 30V AC; max. 30V DC
Insulation voltage: 3.75kV
Case: DIP6
Manufacturer series: OptoMOS
Kind of output: MOSFET
Type of relay: solid state
Turn-on time: 2ms
Turn-off time: 5ms
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 1.5A
auf Bestellung 31 Stücke:
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10+7.25 EUR
12+6.09 EUR
13+5.76 EUR
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IX2127G IX2127G IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85F670F3CC58BF&compId=IX2127.pdf?ci_sign=38a8b7c0bf9e260942cd93345172f63defde3c14 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
auf Bestellung 279 Stücke:
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90+0.8 EUR
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IX2127N IX2127N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85F670F3CC58BF&compId=IX2127.pdf?ci_sign=38a8b7c0bf9e260942cd93345172f63defde3c14 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
auf Bestellung 825 Stücke:
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LOC110P LOC110P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
Produkt ist nicht verfügbar
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LOC110PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
Produkt ist nicht verfügbar
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LOC110STR LOC110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
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DSEI120-06A DSEI120-06A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD55B099A6E18BF&compId=DSEI120-06A.pdf?ci_sign=87e35c6ef00971999446e2a2eff925d1df89a02b Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 126A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 1.12V
Power dissipation: 357W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.38 EUR
7+10.48 EUR
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DSEI12-12A DSEI12-12A IXYS pVersion=0046&contRep=ZT&docId=E29205785DA779F19A99005056AB752F&compId=DSEI12-12A.pdf?ci_sign=5f63879e38ba48d784c76f9195f6ab2218d4f95f Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 85 Stücke:
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21+3.5 EUR
34+2.14 EUR
36+2.03 EUR
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DSEI12-10A DSEI12-10A IXYS Littelfuse-Power-Semiconductors-DSEI12-10A-Datasheet?assetguid=38eae98d-c5a6-4995-9ec9-e84457531251 description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; tube; Ifsm: 75A; TO220AC; 78W; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.7V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 2.29...2.79mm
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.52 EUR
25+2.87 EUR
35+2.06 EUR
37+1.96 EUR
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DSEI12-12AZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4BD27DDADA0C4&compId=DSEI12-12AZ.pdf?ci_sign=5358b52cb442ba2514b9d055bb3b361c2c373018 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Produkt ist nicht verfügbar
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DSEI2X31-12B DSEI2X31-12B IXYS pVersion=0046&contRep=ZT&docId=E1C04A8FCC4FA7F1A6F5005056AB5A8F&compId=DSEI2x31-12B.pdf?ci_sign=c9685214d0330fe8ec9daa3f55f36a38fa1e7e9e description Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 28Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 28A x2
Case: SOT227B
Max. forward voltage: 2.55V
Max. forward impulse current: 210A
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 103 Stücke:
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3+24.75 EUR
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IXFX120N25P IXFX120N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9FC6E4A3B820&compId=IXFK(X)120N25P.pdf?ci_sign=3134161775411c290289e374cd33f69b9f8de3e4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX120N30P3 IXFX120N30P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD4792F693820&compId=IXFK(X)120N30P3.pdf?ci_sign=6c727e8884ef3f66572a5b3f0eace2ea8daa052b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX120N30T IXFX120N30T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD9A0D060F820&compId=IXFK(X)120N30T.pdf?ci_sign=f7ad151cb9d281d49ca96d548a02ff3a244c55e0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFH50N85X IXFH50N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBEC6F854298BF&compId=IXF_50N85X.pdf?ci_sign=56532bb3aee648f73e62c996a617b6c80a0adc91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 50A; 890W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 218ns
Gate-source voltage: ±30V
Technology: HiPerFET™; X-Class
Produkt ist nicht verfügbar
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IXFK50N85X IXFK50N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBEC6F854298BF&compId=IXF_50N85X.pdf?ci_sign=56532bb3aee648f73e62c996a617b6c80a0adc91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
Produkt ist nicht verfügbar
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IXFT50N85XHV IXFT50N85XHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBEC6F854298BF&compId=IXF_50N85X.pdf?ci_sign=56532bb3aee648f73e62c996a617b6c80a0adc91 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Mounting: SMD
Case: TO268HV
On-state resistance: 0.105Ω
Drain current: 50A
Power dissipation: 890W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 218ns
Produkt ist nicht verfügbar
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IXFL60N80P IXFL60N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8CE4DFB94E38BF&compId=IXFL60N80P.pdf?ci_sign=14d35fc1daeea8bcc23aadfea27e0ee8d937e822 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 40A
Power dissipation: 625W
Case: ISOPLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 250nC
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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DSEP29-06AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4C8F8157AA0C4&compId=DSEP29-06AS.pdf?ci_sign=50c34a2ad249817c71d592c2774d312317cb3639 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: D2PAK
Max. forward voltage: 1.26V
Max. forward impulse current: 250A
Power dissipation: 165W
Technology: HiPerFRED™
Kind of package: tube
Produkt ist nicht verfügbar
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IXTQ36N30P IXTQ36N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF906B09D5DD9E27&compId=IXTA36N30P-DTE.pdf?ci_sign=efd75c498f499d820170bf97b7322d8ea4c63184 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXTQ36N50P IXTQ36N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC503657D27820&compId=IXTH(Q%2CT%2CV)36N50P_S.pdf?ci_sign=17f0299f0cfe8dfdd510cfa36f130136758aa83f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.3 EUR
7+10.38 EUR
10+9.98 EUR
Mindestbestellmenge: 6
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MIXA60HU1200VA IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Technology: Sonic FRD™; XPT™
Power dissipation: 290W
Case: V1-A-Pack
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 60A
Pulsed collector current: 150A
Electrical mounting: FASTON connectors
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Topology: boost chopper; buck chopper; H-bridge
Produkt ist nicht verfügbar
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CS22-12IO1M CS22-12IO1M IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B39BD91F287CDE28&compId=CS22-12IO1M-DTE.pdf?ci_sign=7059b06fb11b31f481f0878b05422bdcb307ce1a Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 25A; 16A; Igt: 30mA; TO220FP; THT; tube
Max. off-state voltage: 1.2kV
Mounting: THT
Type of thyristor: thyristor
Case: TO220FP
Kind of package: tube
Gate current: 30mA
Load current: 16A
Max. load current: 25A
Max. forward impulse current: 0.3kA
auf Bestellung 511 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.46 EUR
33+2.2 EUR
35+2.09 EUR
100+2 EUR
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MCD310-16io1 MCD310-16io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4D62B1B656469&compId=MCC310-16IO1.pdf?ci_sign=dfdc991fb77337f659d202ac945f6212a22fef1a Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
Produkt ist nicht verfügbar
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MCD310-14io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFD0B2FDEB820C4&compId=MCD310-14io1.pdf?ci_sign=00fbb4d604f8405018cfb4b56df66dd520653095 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
Produkt ist nicht verfügbar
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MCD310-22io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFD113CF9ADA0C4&compId=MCD310-22io1.pdf?ci_sign=63242742baba2ae9225ac6a7477b47acdff599c6 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
Produkt ist nicht verfügbar
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MCD310-08io1 MCD310-08io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFD0492542500C4&compId=MCD310-08io1.pdf?ci_sign=d303b0848289dea0f44ec94723234648c15d8b4a Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
Produkt ist nicht verfügbar
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MCD310-12io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFD07D926FCE0C4&compId=MCD310-12io1.pdf?ci_sign=7fc65a1f06075907c416a63cf45cd466384ae6a8 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
Produkt ist nicht verfügbar
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MCD310-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFD0E48ED5000C4&compId=MCD310-18io1.pdf?ci_sign=3e506bc14b2a7601a21596385e243e1ca07d6c77 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
Produkt ist nicht verfügbar
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IXFR40N90P IXFR40N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C7F820&compId=IXFR40N90P.pdf?ci_sign=dc315346ddb98b058b9e3318608cbac74407300d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 230nC
On-state resistance: 0.25Ω
Drain current: 21A
Power dissipation: 300W
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DFE240X600NA DFE240X600NA IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA995A1F2407680C7&compId=DFE240X600NA.pdf?ci_sign=eb8958e4591736478ecee9d24bfca02d7dcd69df Category: Diode modules
Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw
Case: SOT227B
Type of semiconductor module: diode
Semiconductor structure: double independent
Technology: FRED
Mechanical mounting: screw
Electrical mounting: screw
Reverse recovery time: 35ns
Max. forward voltage: 1.2V
Load current: 120A x2
Max. forward impulse current: 1.2kA
Max. off-state voltage: 0.6kV
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
2+40.58 EUR
3+40.14 EUR
Mindestbestellmenge: 2
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MG17100S-BN4MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Mechanical mounting: screw
Case: Y4-M5
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Produkt ist nicht verfügbar
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CPC1580P IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDEA539A3A20D5&compId=CPC1580.pdf?ci_sign=8487a83707570fd3a414431891f1b3b7a340f3e4 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: tube
Produkt ist nicht verfügbar
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MCC255-18io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B9B9E8F0D60680C4&compId=MCC255-18io1.pdf?ci_sign=c0cb79c28dbaf2bf7900eca875739c56fa1974f9
MCC255-18io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V
Kind of package: bulk
Case: Y1-CU
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.08V
Load current: 250A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 7.82kA
Produkt ist nicht verfügbar
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MCC255-12io1 MCC255-12io1.pdf
MCC255-12io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 250A; Y1; Ufmax: 1.36V
Kind of package: bulk
Case: Y1
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.36V
Load current: 250A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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MCMA260PD1600YB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80F1711D0700C4&compId=MCMA260PD1600YB.pdf?ci_sign=6ad821fdb3a09984a07cda7c076290735039285b pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Case: Y4-M6
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.81V
Max. forward voltage: 1.06V
Load current: 260A
Max. load current: 408A
Max. forward impulse current: 8.3kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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CPC1977J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B100C7&compId=CPC1977.pdf?ci_sign=8bb34dad3fc46c0ba752492770e97b8051520cb2
CPC1977J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 20ms
Max. operating current: 1.25A
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 100mA
On-state resistance: 1Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: i4-pac
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Produkt ist nicht verfügbar
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IXFP50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
IXFP50N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
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IXFA50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXBOD1-21R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4
IXBOD1-21R
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; bulk; 2.1kV
Mounting: THT
Max. load current: 0.9A
Breakover voltage: 2.1kV
Case: BOD
Type of thyristor: BOD x3
Kind of package: bulk
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+88.93 EUR
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IXBT16N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD04849F0DFB820&compId=IXBH(T)16N170A.pdf?ci_sign=05b45852ed6e7230aca07a9203cce83faedf4e33
IXBT16N170A
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.63 EUR
Mindestbestellmenge: 5
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IXBT16N170AHV pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD01F9B98FE5820&compId=IXBA16N170AHV.pdf?ci_sign=95336b0cb3303bf228c8eebd741f5683b4c5f35c
IXBT16N170AHV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Kind of package: tube
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.63 EUR
10+14.07 EUR
Mindestbestellmenge: 5
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DNA30E2200PA pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF00570FE87D8BF&compId=DNA30E2200PA.pdf?ci_sign=b201c089b1d3fcd918ecc29f65e04c90bb799031
DNA30E2200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Case: TO220AC
Power dissipation: 210W
Mounting: THT
Semiconductor structure: single diode
Type of diode: rectifying
Kind of package: tube
auf Bestellung 396 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.22 EUR
20+3.69 EUR
21+3.47 EUR
50+3.4 EUR
100+3.35 EUR
Mindestbestellmenge: 14
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DNA30E2200PZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4707EF53EE0C4&compId=DNA30E2200PZ.pdf?ci_sign=15fe4b8ac3db46205a74e29bc7d07c8d2bc18514
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Case: TO263ABHV
Power dissipation: 210W
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Type of diode: rectifying
Kind of package: tube
Produkt ist nicht verfügbar
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DNA30EM2200PZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB482F0388180C4&compId=DNA30EM2200PZ.pdf?ci_sign=3857f564e83beb1af70b0ce4a3621992dc06f0fa
DNA30EM2200PZ-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Case: TO263ABHV
Power dissipation: 210W
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Type of diode: rectifying
Kind of package: tube
Produkt ist nicht verfügbar
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MDNA600P2200PTSF
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Max. off-state voltage: 2.2kV
Load current: 600A
Max. forward impulse current: 15kA
Electrical mounting: Press-Fit
Case: SimBus F
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MDNA300P2200PTSF
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Max. off-state voltage: 2.2kV
Load current: 300A
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Case: SimBus F
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MDNA425P2200PTSF
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 2.2kV
Load current: 425A
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Case: SimBus F
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MDNA660U2200PTEH pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBDA13A53CBB8A0C7&compId=MDNA660U2200PTEH.pdf?ci_sign=c7490321ee76c4d350619996c90c0e64c2284ada
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 2.2kV
Load current: 660A
Max. forward impulse current: 5kA
Electrical mounting: Press-Fit
Version: module
Max. forward voltage: 1.28V
Case: E3-Pack
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCNA120UI2200PED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: 3-phase diode-thyristor bridge; boost chopper
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 150A
Produkt ist nicht verfügbar
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FUO50-16N pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA83C017CDAAE143&compId=FUO50-16N.pdf?ci_sign=6122936eac9983a4efa3876aa099ecd7a7887436
FUO50-16N
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 50A
Max. forward impulse current: 270A
Electrical mounting: THT
Max. forward voltage: 1.04V
Case: ISOPLUS i4-pac™ x024a
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+22.18 EUR
5+21.89 EUR
10+21.32 EUR
Mindestbestellmenge: 4
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IXSH80N120L2KHV pVersion=0046&contRep=ZT&docId=005056AB281E1FD099C55B7758D1E0E1&compId=IXSH80N120L2KHV.pdf?ci_sign=be010a8c633b27bff592167438e90ea2234da827
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -10...23V
Gate charge: 135nC
On-state resistance: 58mΩ
Drain current: 58A
Power dissipation: 395W
Drain-source voltage: 1.2kV
Pulsed drain current: 198A
Polarisation: unipolar
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXGN400N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2F019CE41B820&compId=IXGN400N60B3.pdf?ci_sign=67c9041076c20f7cbbce35e6237791751933bdc6
IXGN400N60B3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Pulsed collector current: 1.5kA
Max. off-state voltage: 0.6kV
Case: SOT227B
Produkt ist nicht verfügbar
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IXGK400N30A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE928C3F5451820&compId=IXGK(X)400N30A3.pdf?ci_sign=620a1db92159c5e67eff60170c2cd1cd5ba80b7c
IXGK400N30A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 560nC
Turn-on time: 0.1µs
Turn-off time: 565ns
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Collector-emitter voltage: 300V
Pulsed collector current: 1.2kA
Case: TO264
Produkt ist nicht verfügbar
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IXGN400N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2ECD2BBEEB820&compId=IXGN400N60A3.pdf?ci_sign=8a21fca6ac60404c1a68085a303adb5a72c3c627
IXGN400N60A3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 190A
Power dissipation: 830W
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Case: SOT227B
Produkt ist nicht verfügbar
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MIXG240W1200TEH media?resourcetype=datasheets&amp;itemid=da34aa4f-918f-4eb9-8e52-be6c5ad3ffe1&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg240w1200teh%2520datasheet.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
Produkt ist nicht verfügbar
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IXGP30N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC94053C44F820&compId=IXGA(H%2CP)30N120B3.pdf?ci_sign=bccf7f842442b5dd94ada4fd3560ea2bc2b9462c
IXGP30N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.58 EUR
11+6.51 EUR
12+6.15 EUR
Mindestbestellmenge: 6
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IXGP42N30C3 littelfuse_discrete_igbts_pt_ixgh42n30c3_datasheet.pdf.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO220-3
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 300V
Collector current: 42A
Power dissipation: 223W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 84A
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Turn-on time: 21ns
Turn-off time: 113ns
Produkt ist nicht verfügbar
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LCB110 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c
LCB110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Case: DIP6
Manufacturer series: OptoMOS
Kind of output: MOSFET
Type of relay: solid state
Turn-on time: 3ms
Turn-off time: 3ms
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.25 EUR
27+2.73 EUR
28+2.59 EUR
250+2.57 EUR
Mindestbestellmenge: 23
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LCB716S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A50E811E2158BF&compId=LCB716.pdf?ci_sign=aba403940ef2efda7ea85d724f43ac038f1cdb2c
LCB716S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 2Ω
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP6
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-on time: 3ms
Turn-off time: 3ms
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.72 EUR
15+4.8 EUR
16+4.55 EUR
Mindestbestellmenge: 9
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LCB717 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86CE0C7&compId=LCB717.pdf?ci_sign=87a05df09da7b5fc5d647e258aa9681fbe313cf2
LCB717
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
On-state resistance: 0.3Ω
Switched voltage: max. 30V AC; max. 30V DC
Insulation voltage: 3.75kV
Case: DIP6
Manufacturer series: OptoMOS
Kind of output: MOSFET
Type of relay: solid state
Turn-on time: 2ms
Turn-off time: 5ms
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 1.5A
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.25 EUR
12+6.09 EUR
13+5.76 EUR
Mindestbestellmenge: 10
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IX2127G pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85F670F3CC58BF&compId=IX2127.pdf?ci_sign=38a8b7c0bf9e260942cd93345172f63defde3c14
IX2127G
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
Mindestbestellmenge: 90
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IX2127N pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85F670F3CC58BF&compId=IX2127.pdf?ci_sign=38a8b7c0bf9e260942cd93345172f63defde3c14
IX2127N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
auf Bestellung 825 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
Mindestbestellmenge: 84
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LOC110P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6
LOC110P
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
Produkt ist nicht verfügbar
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LOC110PTR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
Produkt ist nicht verfügbar
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LOC110STR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6
LOC110STR
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Produkt ist nicht verfügbar
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DSEI120-06A pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD55B099A6E18BF&compId=DSEI120-06A.pdf?ci_sign=87e35c6ef00971999446e2a2eff925d1df89a02b
DSEI120-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 126A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 1.12V
Power dissipation: 357W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.38 EUR
7+10.48 EUR
Mindestbestellmenge: 6
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DSEI12-12A pVersion=0046&contRep=ZT&docId=E29205785DA779F19A99005056AB752F&compId=DSEI12-12A.pdf?ci_sign=5f63879e38ba48d784c76f9195f6ab2218d4f95f
DSEI12-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.5 EUR
34+2.14 EUR
36+2.03 EUR
Mindestbestellmenge: 21
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DSEI12-10A description Littelfuse-Power-Semiconductors-DSEI12-10A-Datasheet?assetguid=38eae98d-c5a6-4995-9ec9-e84457531251
DSEI12-10A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; tube; Ifsm: 75A; TO220AC; 78W; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.7V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 2.29...2.79mm
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.52 EUR
25+2.87 EUR
35+2.06 EUR
37+1.96 EUR
Mindestbestellmenge: 21
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DSEI12-12AZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4BD27DDADA0C4&compId=DSEI12-12AZ.pdf?ci_sign=5358b52cb442ba2514b9d055bb3b361c2c373018
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Produkt ist nicht verfügbar
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DSEI2X31-12B description pVersion=0046&contRep=ZT&docId=E1C04A8FCC4FA7F1A6F5005056AB5A8F&compId=DSEI2x31-12B.pdf?ci_sign=c9685214d0330fe8ec9daa3f55f36a38fa1e7e9e
DSEI2X31-12B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 28Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 28A x2
Case: SOT227B
Max. forward voltage: 2.55V
Max. forward impulse current: 210A
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.75 EUR
Mindestbestellmenge: 3
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IXFX120N25P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9FC6E4A3B820&compId=IXFK(X)120N25P.pdf?ci_sign=3134161775411c290289e374cd33f69b9f8de3e4
IXFX120N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX120N30P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD4792F693820&compId=IXFK(X)120N30P3.pdf?ci_sign=6c727e8884ef3f66572a5b3f0eace2ea8daa052b
IXFX120N30P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX120N30T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD9A0D060F820&compId=IXFK(X)120N30T.pdf?ci_sign=f7ad151cb9d281d49ca96d548a02ff3a244c55e0
IXFX120N30T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFH50N85X pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBEC6F854298BF&compId=IXF_50N85X.pdf?ci_sign=56532bb3aee648f73e62c996a617b6c80a0adc91
IXFH50N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 50A; 890W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 218ns
Gate-source voltage: ±30V
Technology: HiPerFET™; X-Class
Produkt ist nicht verfügbar
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IXFK50N85X pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBEC6F854298BF&compId=IXF_50N85X.pdf?ci_sign=56532bb3aee648f73e62c996a617b6c80a0adc91
IXFK50N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
Produkt ist nicht verfügbar
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IXFT50N85XHV pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBEC6F854298BF&compId=IXF_50N85X.pdf?ci_sign=56532bb3aee648f73e62c996a617b6c80a0adc91
IXFT50N85XHV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Mounting: SMD
Case: TO268HV
On-state resistance: 0.105Ω
Drain current: 50A
Power dissipation: 890W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 218ns
Produkt ist nicht verfügbar
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IXFL60N80P pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8CE4DFB94E38BF&compId=IXFL60N80P.pdf?ci_sign=14d35fc1daeea8bcc23aadfea27e0ee8d937e822
IXFL60N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 40A
Power dissipation: 625W
Case: ISOPLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 250nC
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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DSEP29-06AS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4C8F8157AA0C4&compId=DSEP29-06AS.pdf?ci_sign=50c34a2ad249817c71d592c2774d312317cb3639
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: D2PAK
Max. forward voltage: 1.26V
Max. forward impulse current: 250A
Power dissipation: 165W
Technology: HiPerFRED™
Kind of package: tube
Produkt ist nicht verfügbar
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IXTQ36N30P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF906B09D5DD9E27&compId=IXTA36N30P-DTE.pdf?ci_sign=efd75c498f499d820170bf97b7322d8ea4c63184
IXTQ36N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXTQ36N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC503657D27820&compId=IXTH(Q%2CT%2CV)36N50P_S.pdf?ci_sign=17f0299f0cfe8dfdd510cfa36f130136758aa83f
IXTQ36N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.3 EUR
7+10.38 EUR
10+9.98 EUR
Mindestbestellmenge: 6
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MIXA60HU1200VA
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Technology: Sonic FRD™; XPT™
Power dissipation: 290W
Case: V1-A-Pack
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 60A
Pulsed collector current: 150A
Electrical mounting: FASTON connectors
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Topology: boost chopper; buck chopper; H-bridge
Produkt ist nicht verfügbar
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CS22-12IO1M pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B39BD91F287CDE28&compId=CS22-12IO1M-DTE.pdf?ci_sign=7059b06fb11b31f481f0878b05422bdcb307ce1a
CS22-12IO1M
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 25A; 16A; Igt: 30mA; TO220FP; THT; tube
Max. off-state voltage: 1.2kV
Mounting: THT
Type of thyristor: thyristor
Case: TO220FP
Kind of package: tube
Gate current: 30mA
Load current: 16A
Max. load current: 25A
Max. forward impulse current: 0.3kA
auf Bestellung 511 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.46 EUR
33+2.2 EUR
35+2.09 EUR
100+2 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
MCD310-16io1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4D62B1B656469&compId=MCC310-16IO1.pdf?ci_sign=dfdc991fb77337f659d202ac945f6212a22fef1a
MCD310-16io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
Produkt ist nicht verfügbar
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MCD310-14io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFD0B2FDEB820C4&compId=MCD310-14io1.pdf?ci_sign=00fbb4d604f8405018cfb4b56df66dd520653095
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
Produkt ist nicht verfügbar
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MCD310-22io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFD113CF9ADA0C4&compId=MCD310-22io1.pdf?ci_sign=63242742baba2ae9225ac6a7477b47acdff599c6
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
Produkt ist nicht verfügbar
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MCD310-08io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFD0492542500C4&compId=MCD310-08io1.pdf?ci_sign=d303b0848289dea0f44ec94723234648c15d8b4a
MCD310-08io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
Produkt ist nicht verfügbar
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MCD310-12io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFD07D926FCE0C4&compId=MCD310-12io1.pdf?ci_sign=7fc65a1f06075907c416a63cf45cd466384ae6a8
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
Produkt ist nicht verfügbar
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MCD310-18io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFD0E48ED5000C4&compId=MCD310-18io1.pdf?ci_sign=3e506bc14b2a7601a21596385e243e1ca07d6c77
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
Produkt ist nicht verfügbar
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IXFR40N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C7F820&compId=IXFR40N90P.pdf?ci_sign=dc315346ddb98b058b9e3318608cbac74407300d
IXFR40N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 230nC
On-state resistance: 0.25Ω
Drain current: 21A
Power dissipation: 300W
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DFE240X600NA pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA995A1F2407680C7&compId=DFE240X600NA.pdf?ci_sign=eb8958e4591736478ecee9d24bfca02d7dcd69df
DFE240X600NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw
Case: SOT227B
Type of semiconductor module: diode
Semiconductor structure: double independent
Technology: FRED
Mechanical mounting: screw
Electrical mounting: screw
Reverse recovery time: 35ns
Max. forward voltage: 1.2V
Load current: 120A x2
Max. forward impulse current: 1.2kA
Max. off-state voltage: 0.6kV
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+40.58 EUR
3+40.14 EUR
Mindestbestellmenge: 2
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MG17100S-BN4MM
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Mechanical mounting: screw
Case: Y4-M5
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Produkt ist nicht verfügbar
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CPC1580P pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDEA539A3A20D5&compId=CPC1580.pdf?ci_sign=8487a83707570fd3a414431891f1b3b7a340f3e4
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: tube
Produkt ist nicht verfügbar
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