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VUB116-16NOXT IXYS VUB116-16NOXT.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DPG60C400HB DPG60C400HB IXYS Littelfuse-Power-Semiconductors-DPG60C400HB-Datasheet?assetguid=858E0495-7BD0-465A-8A89-2681A2B88183 Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 360A
Case: TO247-3
Max. forward voltage: 1.41V
Power dissipation: 160W
Reverse recovery time: 45ns
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 9 Stücke:
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9+7.95 EUR
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IXTQ10P50P IXTQ10P50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO3P
Case: TO3P
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -10A
Gate charge: 50nC
Reverse recovery time: 414ns
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Kind of package: tube
auf Bestellung 120 Stücke:
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8+9.45 EUR
12+6.01 EUR
13+5.68 EUR
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IXTA10P50P IXTA10P50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO263
Case: TO263
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -10A
Gate charge: 50nC
Reverse recovery time: 414ns
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Kind of package: tube
auf Bestellung 120 Stücke:
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13+5.58 EUR
14+5.26 EUR
50+5.06 EUR
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IXTP10P15T IXTP10P15T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03840D407D8BF&compId=IXT_10P15T.pdf?ci_sign=aab868e73793fd93dd8185240cab19c3a6c680af Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Case: TO220AB
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Drain-source voltage: -150V
Drain current: -10A
Gate charge: 36nC
Reverse recovery time: 120ns
On-state resistance: 0.35Ω
Power dissipation: 83W
Gate-source voltage: ±15V
Kind of package: tube
auf Bestellung 24 Stücke:
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CPC1540GS CPC1540GS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D740C7&compId=CPC1540.pdf?ci_sign=5f1209c6b4ad2777cac01c5c99b40e7fe82056f9 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Relay variant: 1-phase; current source
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
Type of relay: solid state
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
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CPC1540GSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D740C7&compId=CPC1540.pdf?ci_sign=5f1209c6b4ad2777cac01c5c99b40e7fe82056f9 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Relay variant: 1-phase; current source
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
Type of relay: solid state
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Produkt ist nicht verfügbar
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DPG80C400HB DPG80C400HB IXYS media?resourcetype=datasheets&itemid=61E73F8D-AB2F-4EB2-9820-E7123F4DC84B&filename=Littelfuse-Power-Semiconductors-DPG80C400HB-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 40Ax2; tube; Ifsm: 400A; TO247-3; 215W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 40A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: TO247-3
Max. forward voltage: 1.43V
Power dissipation: 215W
Reverse recovery time: 45ns
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 295 Stücke:
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7+11.58 EUR
9+8.31 EUR
10+7.85 EUR
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IXTP1N120P IXTP1N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
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IXTA1N120P IXTA1N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Kind of package: tube
Case: TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
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IXTT02N450HV IXTT02N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1471820&compId=IXTA(T)02N450HV.pdf?ci_sign=035071321f59a72a8b4bd172f91c4d79fad9fbe1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO268HV; 1.6us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 148 Stücke:
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3+28.29 EUR
10+27.2 EUR
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IXTT1N450HV IXTT1N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDC022763C7820&compId=IXTH(T)1N450HV.pdf?ci_sign=1a542cb69701b4bb55549a4f2857e06f4cbbbc22 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 46nC
Reverse recovery time: 1.75µs
Drain current: 1A
On-state resistance: 80Ω
Power dissipation: 520W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXYH30N450HV IXYH30N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB097207154F820&compId=IXYH(t)30N450HV.pdf?ci_sign=ce2d04ecdba3c42f51e93c522cdcffa35e847b64 Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Technology: XPT™
Produkt ist nicht verfügbar
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IXTH02N450HV IXTH02N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91799820&compId=IXTH02N450HV.pdf?ci_sign=95856f459aeb36e578257aa155b9eeb989e13775 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXYT30N450HV IXYT30N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB097207154F820&compId=IXYH(t)30N450HV.pdf?ci_sign=ce2d04ecdba3c42f51e93c522cdcffa35e847b64 Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1542ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Technology: XPT™
Produkt ist nicht verfügbar
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IXYX40N450HV IXYX40N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB0A6524A537820&compId=IXYX40N450HV.pdf?ci_sign=373c09a202907f40fc0498452328dc4218a349c0 Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 40A; 660W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 170nC
Turn-on time: 786ns
Turn-off time: 1128ns
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 660W
Pulsed collector current: 350A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Technology: XPT™
Produkt ist nicht verfügbar
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IXTX1R4N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F14F5820&compId=IXTX1R4N450HV.pdf?ci_sign=6d8938563162ce626547a852b348eda8e18b86c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Reverse recovery time: 660ns
Drain current: 1.4A
Pulsed drain current: 5A
Gate-source voltage: ±20V
On-state resistance: 40Ω
Power dissipation: 960W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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LDA203S LDA203S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC2F747AE01EC&compId=LDA203.pdf?ci_sign=e8c00693dacd4003e8fc035e9efcac42f0fb87f6 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Trigger current: 1A
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
auf Bestellung 205 Stücke:
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43+1.7 EUR
53+1.37 EUR
84+0.86 EUR
88+0.82 EUR
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LDA213S LDA213S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AD204370281EC&compId=LDA213.pdf?ci_sign=6bf1f535cde47fa270dceaf89ce0b7c1d34729da Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Trigger current: 1A
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
auf Bestellung 195 Stücke:
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37+1.94 EUR
46+1.59 EUR
72+1 EUR
76+0.94 EUR
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DSS60-0045B DSS60-0045B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD674347A53B8BF&compId=DSS60-0045B.pdf?ci_sign=def65be7d5890f8ff83bbf40b56f0df9a8f25da4 description Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 60A; TO247-2; Ufmax: 0.57V
Mounting: THT
Case: TO247-2
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Power dissipation: 155W
Max. forward voltage: 0.57V
Max. off-state voltage: 45V
Load current: 60A
Max. forward impulse current: 0.6kA
auf Bestellung 132 Stücke:
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15+5.02 EUR
17+4.43 EUR
18+3.98 EUR
20+3.76 EUR
30+3.7 EUR
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LAA108P LAA108P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892260C7&compId=LAA108.pdf?ci_sign=b422f07330ccafc6349ee64d10cd1d1a446af717 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
auf Bestellung 537 Stücke:
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23+3.12 EUR
26+2.85 EUR
30+2.46 EUR
31+2.32 EUR
50+2.25 EUR
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LAA108PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892260C7&compId=LAA108.pdf?ci_sign=b422f07330ccafc6349ee64d10cd1d1a446af717 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
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PLA150S PLA150S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Case: DIP6
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
auf Bestellung 145 Stücke:
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16+4.69 EUR
18+4.19 EUR
19+3.96 EUR
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PLA150 PLA150 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Case: DIP6
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.33 EUR
18+4.15 EUR
19+3.93 EUR
50+3.9 EUR
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IXBH42N170 IXBH42N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1C570134958BF&compId=IXBH42N170_IXBT42N170.pdf?ci_sign=b7a57f2357e60d94d3088f969bde87ef72390bf7 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXFA3N120 IXFA3N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39C93820&compId=IXFA3N120.pdf?ci_sign=8c812837976fee0aac5a23608e183a8630e51a8a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 39nC
Power dissipation: 200W
Drain current: 3A
auf Bestellung 27 Stücke:
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6+12.07 EUR
9+8.14 EUR
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IXFK120N30T IXFK120N30T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD9A0D060F820&compId=IXFK(X)120N30T.pdf?ci_sign=f7ad151cb9d281d49ca96d548a02ff3a244c55e0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 265nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 960W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
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IXFK120N30P3 IXFK120N30P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD4792F693820&compId=IXFK(X)120N30P3.pdf?ci_sign=6c727e8884ef3f66572a5b3f0eace2ea8daa052b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXFK120N25P IXFK120N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9FC6E4A3B820&compId=IXFK(X)120N25P.pdf?ci_sign=3134161775411c290289e374cd33f69b9f8de3e4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXFP270N06T3 IXFP270N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
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IXFA270N06T3 IXFA270N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
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LCC110 LCC110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: THT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
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LCC110S LCC110S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4AD8C52C838BF&compId=lcc110.pdf?ci_sign=c9f5a4c15f68bc8b9d95e9201f8b42fdd258dfe1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
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LCC110PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
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LCC110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
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LCC110P LCC110P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
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MCC255-14io1 MCC255-14io1 IXYS MCC255-14io1.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 250A; Y1; Ufmax: 1.36V
Kind of package: bulk
Case: Y1
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.36V
Load current: 250A
Max. off-state voltage: 1.4kV
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MCC255-16io1 MCC255-16io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99D55E8C6C820C4&compId=MCC255-16IO1.pdf?ci_sign=93ad59242ff7c1ab22df90aad5d7e28db873c9c4 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V
Kind of package: bulk
Case: Y1-CU
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.08V
Load current: 250A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 7.82kA
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MCC255-18io1 MCC255-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B9B9E8F0D60680C4&compId=MCC255-18io1.pdf?ci_sign=c0cb79c28dbaf2bf7900eca875739c56fa1974f9 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V
Kind of package: bulk
Case: Y1-CU
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.08V
Load current: 250A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 7.82kA
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MCC255-12io1 MCC255-12io1 IXYS MCC255-12io1.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 250A; Y1; Ufmax: 1.36V
Kind of package: bulk
Case: Y1
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.36V
Load current: 250A
Max. off-state voltage: 1.2kV
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MCMA260PD1600YB IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80F1711D0700C4&compId=MCMA260PD1600YB.pdf?ci_sign=6ad821fdb3a09984a07cda7c076290735039285b Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Case: Y4-M6
Kind of package: bulk
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.81V
Max. forward voltage: 1.06V
Max. off-state voltage: 1.6kV
Load current: 260A
Max. load current: 408A
Max. forward impulse current: 8.3kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
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CPC1977J CPC1977J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B100C7&compId=CPC1977.pdf?ci_sign=8bb34dad3fc46c0ba752492770e97b8051520cb2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1.25A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
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IXFP50N20X3 IXFP50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
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IXFA50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
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IXBOD1-21R IXBOD1-21R IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4 Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; bulk; 2.1kV
Mounting: THT
Max. load current: 0.9A
Breakover voltage: 2.1kV
Case: BOD
Type of thyristor: BOD x3
Kind of package: bulk
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IXBT16N170A IXBT16N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD04849F0DFB820&compId=IXBH(T)16N170A.pdf?ci_sign=05b45852ed6e7230aca07a9203cce83faedf4e33 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Gate charge: 65nC
Turn-off time: 370ns
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
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IXBT16N170AHV IXBT16N170AHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD01F9B98FE5820&compId=IXBA16N170AHV.pdf?ci_sign=95336b0cb3303bf228c8eebd741f5683b4c5f35c Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Kind of package: tube
Gate charge: 65nC
Turn-off time: 370ns
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
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DNA30E2200PA DNA30E2200PA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF00570FE87D8BF&compId=DNA30E2200PA.pdf?ci_sign=b201c089b1d3fcd918ecc29f65e04c90bb799031 Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Case: TO220AC
Power dissipation: 210W
Mounting: THT
Semiconductor structure: single diode
Type of diode: rectifying
Kind of package: tube
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14+5.22 EUR
20+3.69 EUR
21+3.47 EUR
50+3.4 EUR
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DNA30E2200PZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4707EF53EE0C4&compId=DNA30E2200PZ.pdf?ci_sign=15fe4b8ac3db46205a74e29bc7d07c8d2bc18514 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Case: TO263ABHV
Power dissipation: 210W
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Type of diode: rectifying
Kind of package: tube
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DNA30EM2200PZ-TUB DNA30EM2200PZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB482F0388180C4&compId=DNA30EM2200PZ.pdf?ci_sign=3857f564e83beb1af70b0ce4a3621992dc06f0fa Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Case: TO263ABHV
Power dissipation: 210W
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Type of diode: rectifying
Kind of package: tube
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MDNA600P2200PTSF IXYS Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Max. off-state voltage: 2.2kV
Load current: 600A
Max. forward impulse current: 15kA
Electrical mounting: Press-Fit
Case: SimBus F
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
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MDNA300P2200PTSF IXYS Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Max. off-state voltage: 2.2kV
Load current: 300A
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Case: SimBus F
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
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MDNA425P2200PTSF IXYS Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 2.2kV
Load current: 425A
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Case: SimBus F
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
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MDNA660U2200PTEH IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBDA13A53CBB8A0C7&compId=MDNA660U2200PTEH.pdf?ci_sign=c7490321ee76c4d350619996c90c0e64c2284ada Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 2.2kV
Load current: 660A
Max. forward impulse current: 5kA
Electrical mounting: Press-Fit
Version: module
Max. forward voltage: 1.28V
Case: E3-Pack
Mechanical mounting: screw
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MCNA120UI2200PED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: 3-phase diode-thyristor bridge; boost chopper
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 150A
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FUO50-16N FUO50-16N IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA83C017CDAAE143&compId=FUO50-16N.pdf?ci_sign=6122936eac9983a4efa3876aa099ecd7a7887436 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 50A
Max. forward impulse current: 270A
Electrical mounting: THT
Max. forward voltage: 1.04V
Case: ISOPLUS i4-pac™ x024a
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)
4+22.18 EUR
5+21.89 EUR
10+21.32 EUR
Mindestbestellmenge: 4
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IXSH80N120L2KHV IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1FD099C55B7758D1E0E1&compId=IXSH80N120L2KHV.pdf?ci_sign=be010a8c633b27bff592167438e90ea2234da827 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -10...23V
Gate charge: 135nC
On-state resistance: 58mΩ
Drain current: 58A
Power dissipation: 395W
Drain-source voltage: 1.2kV
Pulsed drain current: 198A
Polarisation: unipolar
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXGN400N60B3 IXGN400N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2F019CE41B820&compId=IXGN400N60B3.pdf?ci_sign=67c9041076c20f7cbbce35e6237791751933bdc6 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Pulsed collector current: 1.5kA
Max. off-state voltage: 0.6kV
Case: SOT227B
Produkt ist nicht verfügbar
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IXGK400N30A3 IXGK400N30A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE928C3F5451820&compId=IXGK(X)400N30A3.pdf?ci_sign=620a1db92159c5e67eff60170c2cd1cd5ba80b7c Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 560nC
Turn-on time: 0.1µs
Turn-off time: 565ns
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Collector-emitter voltage: 300V
Pulsed collector current: 1.2kA
Case: TO264
Produkt ist nicht verfügbar
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IXGN400N60A3 IXGN400N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2ECD2BBEEB820&compId=IXGN400N60A3.pdf?ci_sign=8a21fca6ac60404c1a68085a303adb5a72c3c627 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 190A
Power dissipation: 830W
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Case: SOT227B
Produkt ist nicht verfügbar
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VUB116-16NOXT VUB116-16NOXT.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DPG60C400HB Littelfuse-Power-Semiconductors-DPG60C400HB-Datasheet?assetguid=858E0495-7BD0-465A-8A89-2681A2B88183
DPG60C400HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 360A
Case: TO247-3
Max. forward voltage: 1.41V
Power dissipation: 160W
Reverse recovery time: 45ns
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
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IXTQ10P50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e
IXTQ10P50P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO3P
Case: TO3P
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -10A
Gate charge: 50nC
Reverse recovery time: 414ns
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Kind of package: tube
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.45 EUR
12+6.01 EUR
13+5.68 EUR
Mindestbestellmenge: 8
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IXTA10P50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e
IXTA10P50P
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO263
Case: TO263
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -10A
Gate charge: 50nC
Reverse recovery time: 414ns
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Kind of package: tube
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.58 EUR
14+5.26 EUR
50+5.06 EUR
Mindestbestellmenge: 13
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IXTP10P15T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03840D407D8BF&compId=IXT_10P15T.pdf?ci_sign=aab868e73793fd93dd8185240cab19c3a6c680af
IXTP10P15T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Case: TO220AB
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Drain-source voltage: -150V
Drain current: -10A
Gate charge: 36nC
Reverse recovery time: 120ns
On-state resistance: 0.35Ω
Power dissipation: 83W
Gate-source voltage: ±15V
Kind of package: tube
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.97 EUR
Mindestbestellmenge: 24
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CPC1540GS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D740C7&compId=CPC1540.pdf?ci_sign=5f1209c6b4ad2777cac01c5c99b40e7fe82056f9
CPC1540GS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Relay variant: 1-phase; current source
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
Type of relay: solid state
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1540GSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D740C7&compId=CPC1540.pdf?ci_sign=5f1209c6b4ad2777cac01c5c99b40e7fe82056f9
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Relay variant: 1-phase; current source
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
Type of relay: solid state
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Produkt ist nicht verfügbar
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DPG80C400HB media?resourcetype=datasheets&itemid=61E73F8D-AB2F-4EB2-9820-E7123F4DC84B&filename=Littelfuse-Power-Semiconductors-DPG80C400HB-Datasheet
DPG80C400HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 40Ax2; tube; Ifsm: 400A; TO247-3; 215W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 40A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: TO247-3
Max. forward voltage: 1.43V
Power dissipation: 215W
Reverse recovery time: 45ns
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.58 EUR
9+8.31 EUR
10+7.85 EUR
Mindestbestellmenge: 7
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IXTP1N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0
IXTP1N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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IXTA1N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0
IXTA1N120P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Kind of package: tube
Case: TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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IXTT02N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1471820&compId=IXTA(T)02N450HV.pdf?ci_sign=035071321f59a72a8b4bd172f91c4d79fad9fbe1
IXTT02N450HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO268HV; 1.6us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+28.29 EUR
10+27.2 EUR
Mindestbestellmenge: 3
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IXTT1N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDC022763C7820&compId=IXTH(T)1N450HV.pdf?ci_sign=1a542cb69701b4bb55549a4f2857e06f4cbbbc22
IXTT1N450HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 46nC
Reverse recovery time: 1.75µs
Drain current: 1A
On-state resistance: 80Ω
Power dissipation: 520W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXYH30N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB097207154F820&compId=IXYH(t)30N450HV.pdf?ci_sign=ce2d04ecdba3c42f51e93c522cdcffa35e847b64
IXYH30N450HV
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Technology: XPT™
Produkt ist nicht verfügbar
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IXTH02N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91799820&compId=IXTH02N450HV.pdf?ci_sign=95856f459aeb36e578257aa155b9eeb989e13775
IXTH02N450HV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXYT30N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB097207154F820&compId=IXYH(t)30N450HV.pdf?ci_sign=ce2d04ecdba3c42f51e93c522cdcffa35e847b64
IXYT30N450HV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1542ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Technology: XPT™
Produkt ist nicht verfügbar
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IXYX40N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB0A6524A537820&compId=IXYX40N450HV.pdf?ci_sign=373c09a202907f40fc0498452328dc4218a349c0
IXYX40N450HV
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 40A; 660W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 170nC
Turn-on time: 786ns
Turn-off time: 1128ns
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 660W
Pulsed collector current: 350A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Technology: XPT™
Produkt ist nicht verfügbar
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IXTX1R4N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F14F5820&compId=IXTX1R4N450HV.pdf?ci_sign=6d8938563162ce626547a852b348eda8e18b86c0
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Reverse recovery time: 660ns
Drain current: 1.4A
Pulsed drain current: 5A
Gate-source voltage: ±20V
On-state resistance: 40Ω
Power dissipation: 960W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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LDA203S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC2F747AE01EC&compId=LDA203.pdf?ci_sign=e8c00693dacd4003e8fc035e9efcac42f0fb87f6
LDA203S
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Trigger current: 1A
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.7 EUR
53+1.37 EUR
84+0.86 EUR
88+0.82 EUR
Mindestbestellmenge: 43
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LDA213S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AD204370281EC&compId=LDA213.pdf?ci_sign=6bf1f535cde47fa270dceaf89ce0b7c1d34729da
LDA213S
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Trigger current: 1A
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
46+1.59 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 37
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DSS60-0045B description pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD674347A53B8BF&compId=DSS60-0045B.pdf?ci_sign=def65be7d5890f8ff83bbf40b56f0df9a8f25da4
DSS60-0045B
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 60A; TO247-2; Ufmax: 0.57V
Mounting: THT
Case: TO247-2
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Power dissipation: 155W
Max. forward voltage: 0.57V
Max. off-state voltage: 45V
Load current: 60A
Max. forward impulse current: 0.6kA
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.02 EUR
17+4.43 EUR
18+3.98 EUR
20+3.76 EUR
30+3.7 EUR
Mindestbestellmenge: 15
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LAA108P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892260C7&compId=LAA108.pdf?ci_sign=b422f07330ccafc6349ee64d10cd1d1a446af717
LAA108P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
auf Bestellung 537 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.12 EUR
26+2.85 EUR
30+2.46 EUR
31+2.32 EUR
50+2.25 EUR
Mindestbestellmenge: 23
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LAA108PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892260C7&compId=LAA108.pdf?ci_sign=b422f07330ccafc6349ee64d10cd1d1a446af717
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
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PLA150S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558
PLA150S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Case: DIP6
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.69 EUR
18+4.19 EUR
19+3.96 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
PLA150 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558
PLA150
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Case: DIP6
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.33 EUR
18+4.15 EUR
19+3.93 EUR
50+3.9 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXBH42N170 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1C570134958BF&compId=IXBH42N170_IXBT42N170.pdf?ci_sign=b7a57f2357e60d94d3088f969bde87ef72390bf7
IXBH42N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA3N120 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39C93820&compId=IXFA3N120.pdf?ci_sign=8c812837976fee0aac5a23608e183a8630e51a8a
IXFA3N120
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 39nC
Power dissipation: 200W
Drain current: 3A
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.07 EUR
9+8.14 EUR
Mindestbestellmenge: 6
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IXFK120N30T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD9A0D060F820&compId=IXFK(X)120N30T.pdf?ci_sign=f7ad151cb9d281d49ca96d548a02ff3a244c55e0
IXFK120N30T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 265nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 960W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFK120N30P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD4792F693820&compId=IXFK(X)120N30P3.pdf?ci_sign=6c727e8884ef3f66572a5b3f0eace2ea8daa052b
IXFK120N30P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK120N25P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9FC6E4A3B820&compId=IXFK(X)120N25P.pdf?ci_sign=3134161775411c290289e374cd33f69b9f8de3e4
IXFK120N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFP270N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f
IXFP270N06T3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA270N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f
IXFA270N06T3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LCC110 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2
LCC110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: THT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.55 EUR
17+4.32 EUR
18+4.09 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
LCC110S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4AD8C52C838BF&compId=lcc110.pdf?ci_sign=c9f5a4c15f68bc8b9d95e9201f8b42fdd258dfe1
LCC110S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.89 EUR
17+4.35 EUR
18+4.1 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
LCC110PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LCC110STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LCC110P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2
LCC110P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC255-14io1 MCC255-14io1.pdf
MCC255-14io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 250A; Y1; Ufmax: 1.36V
Kind of package: bulk
Case: Y1
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.36V
Load current: 250A
Max. off-state voltage: 1.4kV
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+214.6 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MCC255-16io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99D55E8C6C820C4&compId=MCC255-16IO1.pdf?ci_sign=93ad59242ff7c1ab22df90aad5d7e28db873c9c4
MCC255-16io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V
Kind of package: bulk
Case: Y1-CU
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.08V
Load current: 250A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 7.82kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC255-18io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B9B9E8F0D60680C4&compId=MCC255-18io1.pdf?ci_sign=c0cb79c28dbaf2bf7900eca875739c56fa1974f9
MCC255-18io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V
Kind of package: bulk
Case: Y1-CU
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.08V
Load current: 250A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 7.82kA
Produkt ist nicht verfügbar
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MCC255-12io1 MCC255-12io1.pdf
MCC255-12io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 250A; Y1; Ufmax: 1.36V
Kind of package: bulk
Case: Y1
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.36V
Load current: 250A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCMA260PD1600YB pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80F1711D0700C4&compId=MCMA260PD1600YB.pdf?ci_sign=6ad821fdb3a09984a07cda7c076290735039285b
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Case: Y4-M6
Kind of package: bulk
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.81V
Max. forward voltage: 1.06V
Max. off-state voltage: 1.6kV
Load current: 260A
Max. load current: 408A
Max. forward impulse current: 8.3kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC1977J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B100C7&compId=CPC1977.pdf?ci_sign=8bb34dad3fc46c0ba752492770e97b8051520cb2
CPC1977J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1.25A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFP50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
IXFP50N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXFA50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXBOD1-21R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4
IXBOD1-21R
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; bulk; 2.1kV
Mounting: THT
Max. load current: 0.9A
Breakover voltage: 2.1kV
Case: BOD
Type of thyristor: BOD x3
Kind of package: bulk
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+88.93 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXBT16N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD04849F0DFB820&compId=IXBH(T)16N170A.pdf?ci_sign=05b45852ed6e7230aca07a9203cce83faedf4e33
IXBT16N170A
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Gate charge: 65nC
Turn-off time: 370ns
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.63 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXBT16N170AHV pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD01F9B98FE5820&compId=IXBA16N170AHV.pdf?ci_sign=95336b0cb3303bf228c8eebd741f5683b4c5f35c
IXBT16N170AHV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Kind of package: tube
Gate charge: 65nC
Turn-off time: 370ns
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.63 EUR
10+14.07 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DNA30E2200PA pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF00570FE87D8BF&compId=DNA30E2200PA.pdf?ci_sign=b201c089b1d3fcd918ecc29f65e04c90bb799031
DNA30E2200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Case: TO220AC
Power dissipation: 210W
Mounting: THT
Semiconductor structure: single diode
Type of diode: rectifying
Kind of package: tube
auf Bestellung 396 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.22 EUR
20+3.69 EUR
21+3.47 EUR
50+3.4 EUR
100+3.35 EUR
Mindestbestellmenge: 14
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DNA30E2200PZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4707EF53EE0C4&compId=DNA30E2200PZ.pdf?ci_sign=15fe4b8ac3db46205a74e29bc7d07c8d2bc18514
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Case: TO263ABHV
Power dissipation: 210W
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Type of diode: rectifying
Kind of package: tube
Produkt ist nicht verfügbar
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DNA30EM2200PZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB482F0388180C4&compId=DNA30EM2200PZ.pdf?ci_sign=3857f564e83beb1af70b0ce4a3621992dc06f0fa
DNA30EM2200PZ-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Case: TO263ABHV
Power dissipation: 210W
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Type of diode: rectifying
Kind of package: tube
Produkt ist nicht verfügbar
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MDNA600P2200PTSF
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Max. off-state voltage: 2.2kV
Load current: 600A
Max. forward impulse current: 15kA
Electrical mounting: Press-Fit
Case: SimBus F
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MDNA300P2200PTSF
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Max. off-state voltage: 2.2kV
Load current: 300A
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Case: SimBus F
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MDNA425P2200PTSF
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 2.2kV
Load current: 425A
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Case: SimBus F
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MDNA660U2200PTEH pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBDA13A53CBB8A0C7&compId=MDNA660U2200PTEH.pdf?ci_sign=c7490321ee76c4d350619996c90c0e64c2284ada
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 2.2kV
Load current: 660A
Max. forward impulse current: 5kA
Electrical mounting: Press-Fit
Version: module
Max. forward voltage: 1.28V
Case: E3-Pack
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCNA120UI2200PED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: 3-phase diode-thyristor bridge; boost chopper
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 150A
Produkt ist nicht verfügbar
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FUO50-16N pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA83C017CDAAE143&compId=FUO50-16N.pdf?ci_sign=6122936eac9983a4efa3876aa099ecd7a7887436
FUO50-16N
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 50A
Max. forward impulse current: 270A
Electrical mounting: THT
Max. forward voltage: 1.04V
Case: ISOPLUS i4-pac™ x024a
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+22.18 EUR
5+21.89 EUR
10+21.32 EUR
Mindestbestellmenge: 4
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IXSH80N120L2KHV pVersion=0046&contRep=ZT&docId=005056AB281E1FD099C55B7758D1E0E1&compId=IXSH80N120L2KHV.pdf?ci_sign=be010a8c633b27bff592167438e90ea2234da827
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -10...23V
Gate charge: 135nC
On-state resistance: 58mΩ
Drain current: 58A
Power dissipation: 395W
Drain-source voltage: 1.2kV
Pulsed drain current: 198A
Polarisation: unipolar
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXGN400N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2F019CE41B820&compId=IXGN400N60B3.pdf?ci_sign=67c9041076c20f7cbbce35e6237791751933bdc6
IXGN400N60B3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Pulsed collector current: 1.5kA
Max. off-state voltage: 0.6kV
Case: SOT227B
Produkt ist nicht verfügbar
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IXGK400N30A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE928C3F5451820&compId=IXGK(X)400N30A3.pdf?ci_sign=620a1db92159c5e67eff60170c2cd1cd5ba80b7c
IXGK400N30A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 560nC
Turn-on time: 0.1µs
Turn-off time: 565ns
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Collector-emitter voltage: 300V
Pulsed collector current: 1.2kA
Case: TO264
Produkt ist nicht verfügbar
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IXGN400N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2ECD2BBEEB820&compId=IXGN400N60A3.pdf?ci_sign=8a21fca6ac60404c1a68085a303adb5a72c3c627
IXGN400N60A3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 190A
Power dissipation: 830W
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Case: SOT227B
Produkt ist nicht verfügbar
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