Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFK170N20T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264 Mounting: THT Case: TO264 Drain-source voltage: 200V Drain current: 170A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 1.15kW Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 265nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFK170N20P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264 Mounting: THT Case: TO264 Reverse recovery time: 200ns Drain-source voltage: 200V Drain current: 170A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Gate charge: 185nC Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFH110N25T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3 Case: TO247-3 Kind of package: tube Drain-source voltage: 250V Drain current: 110A On-state resistance: 26mΩ Type of transistor: N-MOSFET Power dissipation: 694W Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Gate charge: 157nC Kind of channel: enhancement Mounting: THT |
auf Bestellung 256 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH110N25T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns Case: TO247-3 Kind of package: tube Reverse recovery time: 170ns Drain-source voltage: 250V Drain current: 110A On-state resistance: 26mΩ Type of transistor: N-MOSFET Power dissipation: 694W Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Gate charge: 157nC Kind of channel: enhancement Mounting: THT |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH110N15T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns Case: TO247-3 Kind of package: tube Reverse recovery time: 85ns Drain-source voltage: 150V Drain current: 110A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 480W Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Gate charge: 150nC Kind of channel: enhancement Mounting: THT |
auf Bestellung 286 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA110N15T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns Case: TO263 Kind of package: tube Reverse recovery time: 85ns Drain-source voltage: 150V Drain current: 110A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 480W Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Gate charge: 150nC Kind of channel: enhancement Mounting: SMD |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH110N10P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3 Case: TO247-3 Kind of package: tube Drain-source voltage: 100V Drain current: 110A On-state resistance: 15mΩ Type of transistor: N-MOSFET Power dissipation: 480W Polarisation: unipolar Gate charge: 110nC Technology: HiPerFET™; Polar™ Kind of channel: enhancement Mounting: THT |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1726Y | IXYS |
![]() Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; OptoMOS; 0.75Ω Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 1A Switched voltage: max. 250V DC Manufacturer series: OptoMOS Relay variant: current source On-state resistance: 0.75Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Kind of output: MOSFET Insulation voltage: 2.5kV Body dimensions: 21.08x10.16x3.3mm Turn-off time: 2ms Turn-on time: 5ms Control current max.: 50mA |
auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
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IXBH24N170 | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3 Turn-off time: 1285ns Type of transistor: IGBT Power dissipation: 250W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 0.14µC Technology: BiMOSFET™ Case: TO247-3 Mounting: THT Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 24A Pulsed collector current: 230A Turn-on time: 190ns |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP01N100D | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns Kind of package: tube Gate charge: 0.1µC Kind of channel: depletion Mounting: THT Case: TO220AB Reverse recovery time: 2ns Drain-source voltage: 1kV Drain current: 0.1A On-state resistance: 80Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
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CLA100E1200KB | IXYS |
![]() Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube Kind of package: tube Type of thyristor: thyristor Mounting: THT Case: TO264 Max. off-state voltage: 1.2kV Max. load current: 160A Load current: 100A Gate current: 80mA Max. forward impulse current: 1.19kA |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK230N20T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264 Drain current: 230A On-state resistance: 7.5mΩ Type of transistor: N-MOSFET Power dissipation: 1670W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 358nC Kind of channel: enhancement Mounting: THT Case: TO264 Drain-source voltage: 200V |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK180N25T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264 Drain current: 180A On-state resistance: 12.9mΩ Type of transistor: N-MOSFET Power dissipation: 1390W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 364nC Kind of channel: enhancement Mounting: THT Case: TO264 Drain-source voltage: 250V |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK88N30P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264 Drain current: 88A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 600W Polarisation: unipolar Kind of package: tube Gate charge: 180nC Kind of channel: enhancement Mounting: THT Case: TO264 Drain-source voltage: 300V |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK150N30P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264 Drain current: 150A On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 1.3kW Polarisation: unipolar Kind of package: tube Gate charge: 197nC Kind of channel: enhancement Mounting: THT Case: TO264 Drain-source voltage: 300V |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK240N25X3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; TO264; 177ns Drain current: 240A On-state resistance: 5mΩ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ultra junction x-class Gate charge: 345nC Kind of channel: enhancement Mounting: THT Case: TO264 Reverse recovery time: 177ns Drain-source voltage: 250V |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK80N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264 Drain current: 80A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Kind of package: tube Gate charge: 197nC Kind of channel: enhancement Mounting: THT Case: TO264 Drain-source voltage: 500V |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK100N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns Drain current: 100A On-state resistance: 30mΩ Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ultra junction x-class Gate charge: 183nC Kind of channel: enhancement Mounting: THT Case: TO264 Reverse recovery time: 200ns Drain-source voltage: 650V |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK32N80Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264 Drain current: 32A On-state resistance: 0.27Ω Type of transistor: N-MOSFET Power dissipation: 1kW Polarisation: unipolar Kind of package: tube Gate charge: 0.14µC Kind of channel: enhancement Mounting: THT Case: TO264 Drain-source voltage: 800V |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTK180N15P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264 Drain current: 180A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 800W Polarisation: unipolar Kind of package: tube Gate charge: 240nC Technology: Polar™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO264 Reverse recovery time: 150ns Drain-source voltage: 150V |
auf Bestellung 144 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP120P065T | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns Case: TO220AB Reverse recovery time: 53ns Drain-source voltage: -65V Drain current: -120A On-state resistance: 10mΩ Type of transistor: P-MOSFET Power dissipation: 298W Polarisation: unipolar Kind of package: tube Gate charge: 185nC Technology: TrenchP™ Kind of channel: enhancement Gate-source voltage: ±15V Mounting: THT |
auf Bestellung 284 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP120N075T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns Case: TO220AB Reverse recovery time: 50ns Drain-source voltage: 75V Drain current: 120A On-state resistance: 7.7mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 78nC Kind of channel: enhancement Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTP120N04T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 200W Case: TO220AB On-state resistance: 6.1mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 35ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFN130N90SK | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 900V Drain current: 109A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 10mΩ Technology: SiC Kind of channel: enhancement Gate charge: 68nC Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFN90N170SK | IXYS |
![]() Description: Module; single transistor; 1.7kV; 67A; SOT227B; screw; SiC; 376nC Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.7kV Drain current: 67A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 23mΩ Technology: SiC Kind of channel: enhancement Gate charge: 376nC Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFN27N120SK | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 21.5A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 80mΩ Technology: SiC Kind of channel: enhancement Gate charge: 160nC Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
MCMA140PD1600TB | IXYS |
![]() ![]() ![]() Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk Case: TO240AA Kind of package: bulk Features of semiconductor devices: Kelvin terminal Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Threshold on-voltage: 0.85V Type of semiconductor module: diode-thyristor Max. off-state voltage: 1.6kV Max. load current: 220A Max. forward voltage: 1.28V Load current: 140A Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 2.4kA |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP140N12T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns Case: TO220AB Mounting: THT Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Power dissipation: 577W Polarisation: unipolar Gate charge: 174nC Kind of channel: enhancement Reverse recovery time: 65ns Drain-source voltage: 120V Drain current: 140A On-state resistance: 10mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFH80N25X3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO247-3; 120ns Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ultra junction x-class Gate charge: 83nC Kind of channel: enhancement Mounting: THT Case: TO247-3 Reverse recovery time: 120ns Drain-source voltage: 250V Drain current: 80A On-state resistance: 16mΩ |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH130N15X3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ultra junction x-class Gate charge: 80nC Kind of channel: enhancement Mounting: THT Case: TO247-3 Reverse recovery time: 80ns Drain-source voltage: 150V Drain current: 130A On-state resistance: 9mΩ |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP80N25X3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO220AB; 120ns Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ultra junction x-class Gate charge: 83nC Kind of channel: enhancement Mounting: THT Case: TO220AB Reverse recovery time: 120ns Drain-source voltage: 250V Drain current: 80A On-state resistance: 16mΩ |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFQ80N25X3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO3P Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Kind of package: tube Gate charge: 82nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO3P Drain-source voltage: 250V Drain current: 80A On-state resistance: 16mΩ |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA80N25X3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO263; 120ns Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ultra junction x-class Gate charge: 83nC Kind of channel: enhancement Mounting: SMD Case: TO263 Reverse recovery time: 120ns Drain-source voltage: 250V Drain current: 80A On-state resistance: 16mΩ |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH72N30X3 | IXYS |
![]() ![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO247-3 Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Kind of package: tube Gate charge: 82nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO247-3 Reverse recovery time: 100ns Drain-source voltage: 300V Drain current: 72A On-state resistance: 19mΩ |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFQ72N30X3 | IXYS |
![]() ![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO3P Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Kind of package: tube Gate charge: 82nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO3P Reverse recovery time: 100ns Drain-source voltage: 300V Drain current: 72A On-state resistance: 19mΩ |
auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP130N15X3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ultra junction x-class Gate charge: 80nC Kind of channel: enhancement Mounting: THT Case: TO220AB Reverse recovery time: 80ns Drain-source voltage: 150V Drain current: 130A On-state resistance: 9mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFP72N30X3 | IXYS |
![]() ![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO220AB Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Kind of package: tube Gate charge: 82nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220AB Reverse recovery time: 100ns Drain-source voltage: 300V Drain current: 72A On-state resistance: 19mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFA130N15X3 | IXYS |
![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263 Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Kind of package: tube Gate charge: 80nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: TO263 Reverse recovery time: 80ns Drain-source voltage: 150V Drain current: 130A On-state resistance: 9mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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VBO40-12NO6 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 40A; Ifsm: 320A Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 40A Max. forward impulse current: 0.32kA Electrical mounting: screw Mechanical mounting: screw Version: module Leads: M4 screws Case: SOT227B |
auf Bestellung 134 Stücke: Lieferzeit 14-21 Tag (e) |
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LDA213 | IXYS |
![]() Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8 Mounting: THT Case: DIP8 Turn-on time: 8µs Turn-off time: 345µs Number of channels: 2 Kind of output: Darlington Insulation voltage: 3.75kV CTR@If: 300-30000%@1mA Type of optocoupler: optocoupler |
auf Bestellung 125 Stücke: Lieferzeit 14-21 Tag (e) |
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LDA213S | IXYS |
![]() Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Number of channels: 2 Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
auf Bestellung 195 Stücke: Lieferzeit 14-21 Tag (e) |
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LDA210 | IXYS |
![]() Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8 Mounting: THT Case: DIP8 Turn-on time: 8µs Turn-off time: 345µs Number of channels: 2 Kind of output: Darlington Insulation voltage: 3.75kV CTR@If: 300-30000%@1mA Type of optocoupler: optocoupler |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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LDA212S | IXYS |
![]() Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Number of channels: 2 Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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LDA211S | IXYS |
![]() Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Number of channels: 2 Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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LDA210S | IXYS |
![]() Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; 3.75kV; SOP8 Mounting: SMD Case: SOP8 Turn-on time: 8µs Turn-off time: 345µs Number of channels: 2 Kind of output: Darlington Insulation voltage: 3.75kV CTR@If: 300-30000%@1mA Type of optocoupler: optocoupler |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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FDA217STR | IXYS |
![]() Description: IC: driver; MOSFET gate driver; SO8; Ch: 2 Mounting: SMD Operating temperature: -40...85°C Case: SO8 Type of integrated circuit: driver Number of channels: 2 Kind of package: reel; tape Kind of integrated circuit: MOSFET gate driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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LDA210STR | IXYS |
![]() Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Number of channels: 2 Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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LDA211STR | IXYS |
![]() Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Number of channels: 2 Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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LDA212 | IXYS |
![]() Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8 Mounting: THT Case: DIP8 Turn-on time: 8µs Turn-off time: 345µs Number of channels: 2 Kind of output: Darlington Insulation voltage: 3.75kV CTR@If: 300-30000%@1mA Type of optocoupler: optocoupler |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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LDA212STR | IXYS |
![]() Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Number of channels: 2 Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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LDA213STR | IXYS |
![]() Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Number of channels: 2 Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTP10P50P | IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -500V Drain current: -10A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 414ns |
auf Bestellung 212 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP10P15T | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -10A Power dissipation: 83W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 0.35Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 120ns |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP102N15T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 102A Power dissipation: 455W Case: TO220AB On-state resistance: 18mΩ Mounting: THT Gate charge: 87nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 97ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
MDMA450UB1600PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 175A Case: E2-Pack Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 450A Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
MDMA360UB1600PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 175A Case: E2-Pack Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 400A Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
MDMA210UB1600PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 84A Case: E2-Pack Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 225A Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
MDMA280UB1600PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 140A Case: E2-Pack Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 300A Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXTA120N04T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 200W Case: TO263 On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 58nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 35ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTH420N04T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 420A Power dissipation: 935W Case: TO247-3 On-state resistance: 2mΩ Mounting: THT Gate charge: 315nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 74ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IXFK170N20T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264
Mounting: THT
Case: TO264
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.15kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264
Mounting: THT
Case: TO264
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.15kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFK170N20P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264
Mounting: THT
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264
Mounting: THT
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFH110N25T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Case: TO247-3
Kind of package: tube
Drain-source voltage: 250V
Drain current: 110A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET
Power dissipation: 694W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 157nC
Kind of channel: enhancement
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Case: TO247-3
Kind of package: tube
Drain-source voltage: 250V
Drain current: 110A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET
Power dissipation: 694W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 157nC
Kind of channel: enhancement
Mounting: THT
auf Bestellung 256 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.56 EUR |
9+ | 8.11 EUR |
30+ | 7.84 EUR |
120+ | 7.79 EUR |
IXTH110N25T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Case: TO247-3
Kind of package: tube
Reverse recovery time: 170ns
Drain-source voltage: 250V
Drain current: 110A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET
Power dissipation: 694W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 157nC
Kind of channel: enhancement
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Case: TO247-3
Kind of package: tube
Reverse recovery time: 170ns
Drain-source voltage: 250V
Drain current: 110A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET
Power dissipation: 694W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 157nC
Kind of channel: enhancement
Mounting: THT
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.65 EUR |
9+ | 8.08 EUR |
10+ | 7.64 EUR |
IXFH110N15T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Reverse recovery time: 85ns
Drain-source voltage: 150V
Drain current: 110A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 150nC
Kind of channel: enhancement
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Reverse recovery time: 85ns
Drain-source voltage: 150V
Drain current: 110A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 150nC
Kind of channel: enhancement
Mounting: THT
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.15 EUR |
10+ | 7.32 EUR |
11+ | 6.84 EUR |
30+ | 6.68 EUR |
IXFA110N15T2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Case: TO263
Kind of package: tube
Reverse recovery time: 85ns
Drain-source voltage: 150V
Drain current: 110A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 150nC
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Case: TO263
Kind of package: tube
Reverse recovery time: 85ns
Drain-source voltage: 150V
Drain current: 110A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 150nC
Kind of channel: enhancement
Mounting: SMD
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.04 EUR |
15+ | 4.90 EUR |
16+ | 4.63 EUR |
IXFH110N10P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Case: TO247-3
Kind of package: tube
Drain-source voltage: 100V
Drain current: 110A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Gate charge: 110nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Case: TO247-3
Kind of package: tube
Drain-source voltage: 100V
Drain current: 110A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Gate charge: 110nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Mounting: THT
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.68 EUR |
12+ | 6.18 EUR |
13+ | 5.83 EUR |
CPC1726Y |
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Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; OptoMOS; 0.75Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1A
Switched voltage: max. 250V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.75Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 2.5kV
Body dimensions: 21.08x10.16x3.3mm
Turn-off time: 2ms
Turn-on time: 5ms
Control current max.: 50mA
Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; OptoMOS; 0.75Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1A
Switched voltage: max. 250V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.75Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 2.5kV
Body dimensions: 21.08x10.16x3.3mm
Turn-off time: 2ms
Turn-on time: 5ms
Control current max.: 50mA
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.45 EUR |
20+ | 3.60 EUR |
22+ | 3.40 EUR |
IXBH24N170 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Turn-off time: 1285ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Technology: BiMOSFET™
Case: TO247-3
Mounting: THT
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 230A
Turn-on time: 190ns
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Turn-off time: 1285ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Technology: BiMOSFET™
Case: TO247-3
Mounting: THT
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 230A
Turn-on time: 190ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
IXTP01N100D |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Kind of package: tube
Gate charge: 0.1µC
Kind of channel: depletion
Mounting: THT
Case: TO220AB
Reverse recovery time: 2ns
Drain-source voltage: 1kV
Drain current: 0.1A
On-state resistance: 80Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Kind of package: tube
Gate charge: 0.1µC
Kind of channel: depletion
Mounting: THT
Case: TO220AB
Reverse recovery time: 2ns
Drain-source voltage: 1kV
Drain current: 0.1A
On-state resistance: 80Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.17 EUR |
12+ | 6.19 EUR |
13+ | 5.86 EUR |
CLA100E1200KB |
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Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: TO264
Max. off-state voltage: 1.2kV
Max. load current: 160A
Load current: 100A
Gate current: 80mA
Max. forward impulse current: 1.19kA
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: TO264
Max. off-state voltage: 1.2kV
Max. load current: 160A
Load current: 100A
Gate current: 80mA
Max. forward impulse current: 1.19kA
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.52 EUR |
9+ | 8.38 EUR |
10+ | 7.94 EUR |
25+ | 7.79 EUR |
IXFK230N20T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Drain current: 230A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1670W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 358nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 200V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Drain current: 230A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1670W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 358nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 200V
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 24.35 EUR |
IXFK180N25T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Drain current: 180A
On-state resistance: 12.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 1390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 364nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 250V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Drain current: 180A
On-state resistance: 12.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 1390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 364nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 250V
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 18.73 EUR |
IXFK88N30P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Drain current: 88A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Kind of package: tube
Gate charge: 180nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 300V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Drain current: 88A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Kind of package: tube
Gate charge: 180nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 300V
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.30 EUR |
IXFK150N30P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Drain current: 150A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 300V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Drain current: 150A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 300V
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 20.35 EUR |
100+ | 19.56 EUR |
IXFK240N25X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; TO264; 177ns
Drain current: 240A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 345nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Reverse recovery time: 177ns
Drain-source voltage: 250V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; TO264; 177ns
Drain current: 240A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 345nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Reverse recovery time: 177ns
Drain-source voltage: 250V
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 31.69 EUR |
IXFK80N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264
Drain current: 80A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 500V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264
Drain current: 80A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 500V
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 20.49 EUR |
IXFK100N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Drain current: 100A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 183nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 650V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Drain current: 100A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 183nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 650V
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 17.88 EUR |
IXFK32N80Q3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Drain current: 32A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 1kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 800V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Drain current: 32A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 1kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 800V
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 16.42 EUR |
IXTK180N15P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Drain current: 180A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 800W
Polarisation: unipolar
Kind of package: tube
Gate charge: 240nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO264
Reverse recovery time: 150ns
Drain-source voltage: 150V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Drain current: 180A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 800W
Polarisation: unipolar
Kind of package: tube
Gate charge: 240nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO264
Reverse recovery time: 150ns
Drain-source voltage: 150V
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 19.91 EUR |
5+ | 14.73 EUR |
6+ | 13.93 EUR |
10+ | 13.51 EUR |
25+ | 13.38 EUR |
IXTP120P065T |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Case: TO220AB
Reverse recovery time: 53ns
Drain-source voltage: -65V
Drain current: -120A
On-state resistance: 10mΩ
Type of transistor: P-MOSFET
Power dissipation: 298W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Mounting: THT
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Case: TO220AB
Reverse recovery time: 53ns
Drain-source voltage: -65V
Drain current: -120A
On-state resistance: 10mΩ
Type of transistor: P-MOSFET
Power dissipation: 298W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Mounting: THT
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 7.04 EUR |
15+ | 5.00 EUR |
16+ | 4.73 EUR |
IXTP120N075T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Case: TO220AB
Reverse recovery time: 50ns
Drain-source voltage: 75V
Drain current: 120A
On-state resistance: 7.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 78nC
Kind of channel: enhancement
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Case: TO220AB
Reverse recovery time: 50ns
Drain-source voltage: 75V
Drain current: 120A
On-state resistance: 7.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 78nC
Kind of channel: enhancement
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXTP120N04T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN130N90SK |
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 900V
Drain current: 109A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 68nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 900V
Drain current: 109A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 68nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN90N170SK |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 67A; SOT227B; screw; SiC; 376nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 67A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 23mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 376nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 67A; SOT227B; screw; SiC; 376nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 67A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 23mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 376nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN27N120SK |
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 21.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 160nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 21.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 160nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
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MCMA140PD1600TB |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Type of semiconductor module: diode-thyristor
Max. off-state voltage: 1.6kV
Max. load current: 220A
Max. forward voltage: 1.28V
Load current: 140A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 2.4kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Type of semiconductor module: diode-thyristor
Max. off-state voltage: 1.6kV
Max. load current: 220A
Max. forward voltage: 1.28V
Load current: 140A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 2.4kA
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 42.91 EUR |
25+ | 41.47 EUR |
IXTP140N12T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Power dissipation: 577W
Polarisation: unipolar
Gate charge: 174nC
Kind of channel: enhancement
Reverse recovery time: 65ns
Drain-source voltage: 120V
Drain current: 140A
On-state resistance: 10mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Power dissipation: 577W
Polarisation: unipolar
Gate charge: 174nC
Kind of channel: enhancement
Reverse recovery time: 65ns
Drain-source voltage: 120V
Drain current: 140A
On-state resistance: 10mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFH80N25X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO247-3; 120ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 83nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Reverse recovery time: 120ns
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO247-3; 120ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 83nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Reverse recovery time: 120ns
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.04 EUR |
9+ | 8.21 EUR |
IXFH130N15X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 80nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Reverse recovery time: 80ns
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 9mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 80nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Reverse recovery time: 80ns
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 9mΩ
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
IXFP80N25X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO220AB; 120ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 83nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 120ns
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO220AB; 120ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 83nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 120ns
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.00 EUR |
10+ | 7.18 EUR |
IXFQ80N25X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO3P
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO3P
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 8.94 EUR |
IXFA80N25X3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO263; 120ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 83nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
Reverse recovery time: 120ns
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO263; 120ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 83nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
Reverse recovery time: 120ns
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.78 EUR |
10+ | 7.36 EUR |
IXFH72N30X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.87 EUR |
8+ | 9.28 EUR |
IXFQ72N30X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO3P
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO3P
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 13.27 EUR |
8+ | 8.99 EUR |
IXFP130N15X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 80nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 80ns
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 9mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 80nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 80ns
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 9mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP72N30X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFA130N15X3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 80nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Reverse recovery time: 80ns
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 9mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 80nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Reverse recovery time: 80ns
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 9mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VBO40-12NO6 |
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Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 40A; Ifsm: 320A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.32kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M4 screws
Case: SOT227B
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 40A; Ifsm: 320A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.32kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M4 screws
Case: SOT227B
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 29.87 EUR |
20+ | 28.73 EUR |
LDA213 |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Mounting: THT
Case: DIP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Mounting: THT
Case: DIP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
LDA213S |
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Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 1.99 EUR |
45+ | 1.62 EUR |
72+ | 1.00 EUR |
76+ | 0.94 EUR |
LDA210 |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Mounting: THT
Case: DIP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Mounting: THT
Case: DIP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Im Einkaufswagen
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LDA212S |
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Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Im Einkaufswagen
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LDA211S |
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Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LDA210S |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; 3.75kV; SOP8
Mounting: SMD
Case: SOP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; 3.75kV; SOP8
Mounting: SMD
Case: SOP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDA217STR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Mounting: SMD
Operating temperature: -40...85°C
Case: SO8
Type of integrated circuit: driver
Number of channels: 2
Kind of package: reel; tape
Kind of integrated circuit: MOSFET gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Mounting: SMD
Operating temperature: -40...85°C
Case: SO8
Type of integrated circuit: driver
Number of channels: 2
Kind of package: reel; tape
Kind of integrated circuit: MOSFET gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LDA210STR |
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Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LDA211STR |
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Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LDA212 |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Mounting: THT
Case: DIP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Mounting: THT
Case: DIP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LDA212STR |
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Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LDA213STR |
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Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTP10P50P |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 414ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 414ns
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.55 EUR |
14+ | 5.32 EUR |
15+ | 5.02 EUR |
100+ | 4.83 EUR |
IXTP10P15T |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
24+ | 2.97 EUR |
IXTP102N15T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 97ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 97ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MDMA450UB1600PTED |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MDMA360UB1600PTED |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MDMA210UB1600PTED |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MDMA280UB1600PTED |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTA120N04T2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTH420N04T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH