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LAA110L LAA110L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: THT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
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LAA110LS LAA110LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
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LAA110LSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892080C7&compId=LAA100L.pdf?ci_sign=133833099cee8dee4dfa302627eb4b749f2b8824 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
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LAA110PLTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
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LAA110PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
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LAA110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
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PAA110LSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
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PAA110PLTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
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PAA110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
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XAA117PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
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XAA117STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
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IXTN30N100L IXTN30N100L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA762DDC51FD820&compId=IXTN30N100L.pdf?ci_sign=1267cd27b10289fdcc054aa2d6c82d9805b1b00e Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.45Ω
Gate charge: 545nC
Kind of channel: enhancement
Reverse recovery time: 1µs
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Technology: Linear™
Type of semiconductor module: MOSFET transistor
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IXTB30N100L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B916FF820&compId=IXTB30N100L.pdf?ci_sign=733db101b859fd094ce1250c8d84c21345092274 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
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IXTA130N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEFB1FFB9060D2&compId=IXTA130N10T.PDF?ci_sign=69dce128b1e5f50f401f8f86e0fd7cb4446cbc18 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
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IXTA130N10T-TRL IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEFB1FFB9060D2&compId=IXTA130N10T.PDF?ci_sign=69dce128b1e5f50f401f8f86e0fd7cb4446cbc18 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
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IXTA130N10T7 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEF7B5A4BC20D2&compId=IXTA130N10T7.PDF?ci_sign=72380c18aa9ffac0654aa9ca714129b806c8c025 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
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DPG80C300HB DPG80C300HB IXYS DPG80C300HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 40Ax2; tube; Ifsm: 450A; TO247-3; 215W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.36V
Load current: 40A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.45kA
Power dissipation: 215W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.15 EUR
11+6.56 EUR
12+6.21 EUR
Mindestbestellmenge: 8
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DPG30C300PB DPG30C300PB IXYS Littelfuse-Power-Semiconductors-DPG30C300PB-Datasheet?assetguid=C29230B4-702B-4553-95E4-41ABDC8A3A6D Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.26V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
auf Bestellung 148 Stücke:
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20+3.75 EUR
21+3.42 EUR
27+2.7 EUR
29+2.55 EUR
Mindestbestellmenge: 20
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DPG60C300QB DPG60C300QB IXYS Littelfuse-Power-Semiconductors-DPG60C300QB-Datasheet?assetguid=38393FCB-5AF1-4A3C-B2C9-F6797A3D1C35 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO3P
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10+7.69 EUR
15+5.03 EUR
16+4.76 EUR
30+4.58 EUR
Mindestbestellmenge: 10
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DPF60C300HB DPF60C300HB IXYS DPF60C300HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 0.97V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.4kA
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
auf Bestellung 13 Stücke:
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8+9.98 EUR
10+7.16 EUR
11+6.76 EUR
Mindestbestellmenge: 8
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DPG30C300HB DPG30C300HB IXYS Littelfuse-Power-Semiconductors-DPG30C300HB-Datasheet?assetguid=0400F707-7AFD-48EB-9257-C3597E59CCC5 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.25V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
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13+5.52 EUR
26+2.85 EUR
27+2.69 EUR
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LF2190NTR LF2190NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F2BB37B19F40CE&compId=LF2190NTR.pdf?ci_sign=ffb9a783e484bf36f1f603b30141cdcfee16c247 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4.5...4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
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IXTQ470P2 IXTQ470P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13FF820&compId=IXTQ470P2.pdf?ci_sign=76af40f262edd6db225179a4687589ac6121f39b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 42A
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Kind of channel: enhancement
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IXTN102N65X2 IXTN102N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9E6330B4C1820&compId=IXTN102N65X2.pdf?ci_sign=9e7b58dfb51537d8509f57c064d3549be58d17de Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 76A
Pulsed drain current: 204A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 30mΩ
Gate charge: 152nC
Kind of channel: enhancement
Electrical mounting: screw
Technology: X2-Class
Reverse recovery time: 450ns
Semiconductor structure: single transistor
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
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IXTH52N65X IXTH52N65X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B49515820&compId=IXTH52N65X.pdf?ci_sign=09c23fcab68d044a472f91698252bd936ba7f5b5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 52A; 660W; TO247-3; 435ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 52A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 435ns
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IXTH62N65X2 IXTH62N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B4952B820&compId=IXTH62N65X2.pdf?ci_sign=36d0efac15306422ef53e7207db6fd4a2fefb0ff Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 62A
Power dissipation: 780W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 445ns
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IXTP32N65X IXTP32N65X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC14A9F2EB3820&compId=IXTH(P%2CQ)32N65X.pdf?ci_sign=6a88174097b72279f3942c45d4c91b42e2da5718 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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MKE38RK600DFELB IXYS MKE38RK600DFELB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor
Mounting: SMD
Drain current: 50A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Reverse recovery time: 50ns
Semiconductor structure: diode/transistor
Polarisation: unipolar
Gate charge: 0.19µC
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 600V
Case: SMPD
Produkt ist nicht verfügbar
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IXBH12N300 IXBH12N300 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1CDC51AD698BF&compId=IXBH12N300_IXBT12N300.pdf?ci_sign=3b269cdf731a85c5368096fbeac6275dcc1a9602 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Collector current: 12A
Pulsed collector current: 100A
Turn-on time: 460ns
Turn-off time: 705ns
Type of transistor: IGBT
Power dissipation: 160W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 62nC
Technology: BiMOSFET™; FRED
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXFH180N20X3 IXFH180N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9B97FB5BF8BF&compId=IXF_180N20X3_HV.pdf?ci_sign=4ec3cef28c972acaa6fe64b5c7693252f804b337 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Mounting: THT
Reverse recovery time: 94ns
Drain-source voltage: 200V
Drain current: 180A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Kind of package: tube
Gate charge: 154nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO247-3
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5+14.7 EUR
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IXTH120P065T IXTH120P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Produkt ist nicht verfügbar
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LDA100STR LDA100STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA918501264977E0C4&compId=LDA100.pdf?ci_sign=0df13f6bb6df9ec51f42cec731e0e06baae7cfed Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
auf Bestellung 720 Stücke:
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LDA100 LDA100 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA918501264977E0C4&compId=LDA100.pdf?ci_sign=0df13f6bb6df9ec51f42cec731e0e06baae7cfed Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 3.75kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Kind of output: transistor
Case: DIP6
auf Bestellung 37 Stücke:
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LDA100S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA918501264977E0C4&compId=LDA100.pdf?ci_sign=0df13f6bb6df9ec51f42cec731e0e06baae7cfed Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
Produkt ist nicht verfügbar
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IXFT140N20X3HV IXFT140N20X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
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IXTQ76N25T IXTQ76N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4165ECB579820&compId=IXTA(H%2CI%2CP%2CQ)76N25T.pdf?ci_sign=5561f98ce5cfa59f8e5ad5e0fac5ca227be0863e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO3P; 148ns
Case: TO3P
Mounting: THT
Kind of package: tube
Power dissipation: 460W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 92nC
Kind of channel: enhancement
Reverse recovery time: 148ns
Drain-source voltage: 250V
Drain current: 76A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
auf Bestellung 224 Stücke:
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10+7.84 EUR
14+5.15 EUR
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CS30-12IO1 CS30-12IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C4E460781E27&compId=CS30-12IO1-DTE.pdf?ci_sign=e71831bbd611d0d403ce659e4ecabb1a51f3954c Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO247AD
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 55mA
auf Bestellung 271 Stücke:
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9+8.01 EUR
15+5 EUR
16+4.73 EUR
30+4.7 EUR
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IXFN140N20P IXFN140N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C66907012B8BF&compId=IXFN140N20P.pdf?ci_sign=a0e4bc6acd78ecb9536f9dcaae8667685d73f53e description Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Electrical mounting: screw
Mechanical mounting: screw
Technology: HiPerFET™; Polar™
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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IXFR140N20P IXFR140N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6AB1820&compId=IXFR140N20P.pdf?ci_sign=b301331a199d3b8298da379b97dfd03e718d0239 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXFK140N20P IXFK140N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94595727F820&compId=IXFK140N20P.pdf?ci_sign=d20ac8ee9e68221e8632f05c33f67c84eb8fecee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTK140N20P IXTK140N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF91769AF6A03E27&compId=IXTK140N20P-DTE.pdf?ci_sign=08600a905672f16d4200168350a2bb2948e0f97d Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: PolarHT™
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IXFH140N20X3 IXFH140N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
auf Bestellung 83 Stücke:
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5+16.34 EUR
6+12.3 EUR
7+11.63 EUR
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IXTK22N100L IXTK22N100L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD1D9980B2F820&compId=IXTK(X)22N100L.pdf?ci_sign=0615493c1b1063422d61a154cca03734f6f66ba8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; TO264; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
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IXFZ520N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC6B5820&compId=IXFZ520N075T2.pdf?ci_sign=26fb6a6e5211b58faa65984db5ccbca3e0448fe4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 420A
Power dissipation: 600W
Case: DE475
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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DPF80C200HB DPF80C200HB IXYS DPF80C200HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 1.22V
Load current: 40A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 55ns
Max. forward impulse current: 560A
Power dissipation: 215W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
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DPG60C200HB DPG60C200HB IXYS Littelfuse-Power-Semiconductors-DPG60C200HB-Datasheet?assetguid=87B6D095-C8C9-4D2A-9030-B3214D70FAF8 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 274 Stücke:
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11+6.55 EUR
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DPG60C200QB DPG60C200QB IXYS Littelfuse-Power-Semiconductors-DPG60C200QB-Datasheet?assetguid=1B2C1EA9-F199-4CC1-83AF-AEB704688BF1 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Case: TO3P
Max. off-state voltage: 200V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
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14+5.15 EUR
24+3.09 EUR
25+2.92 EUR
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DPG30C200PB DPG30C200PB IXYS media?resourcetype=datasheets&itemid=414E16FE-8690-49CD-8C7F-B7A69B76A7C3&filename=Littelfuse-Power-Semiconductors-DPG30C200PB-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Case: TO220AB
Max. off-state voltage: 200V
Max. forward voltage: 1.26V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
auf Bestellung 74 Stücke:
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38+1.92 EUR
42+1.73 EUR
47+1.53 EUR
49+1.47 EUR
52+1.4 EUR
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DPF60C200HJ DPF60C200HJ IXYS DPF60C200HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™
Case: ISOPLUS247™
Max. off-state voltage: 200V
Max. forward voltage: 0.88V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 560A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 38 Stücke:
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17+4.32 EUR
19+3.89 EUR
20+3.6 EUR
21+3.45 EUR
22+3.4 EUR
30+3.27 EUR
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DPG30C200HB DPG30C200HB IXYS media?resourcetype=datasheets&itemid=C7522524-F8A5-4F62-BC19-FCC564D51D7C&filename=Littelfuse-Power-Semiconductors-DPG30C200HB-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 1.25V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 24 Stücke:
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24+2.97 EUR
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DPF60C200HB DPF60C200HB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 400A; TO247-3
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 0.91V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IXTP32P05T IXTP32P05T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0CA1113E4F8BF&compId=IXT_32P05T.pdf?ci_sign=db5aa0628442a2ab696c43214df8755287bd452e Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Mounting: THT
Case: TO220AB
Reverse recovery time: 26ns
Drain-source voltage: -50V
Drain current: -32A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Kind of package: tube
Gate charge: 46nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 14 Stücke:
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14+5.11 EUR
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IXTP32P20T IXTP32P20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EF0A8A8C018BF&compId=IXT_32P20T.pdf?ci_sign=6bc8fc2e384d370d1b27158e2571e9d58c0bf6c0 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Mounting: THT
Case: TO220AB
Reverse recovery time: 190ns
Drain-source voltage: -200V
Drain current: -32A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 300 Stücke:
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8+10.18 EUR
10+7.31 EUR
250+7.02 EUR
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LF2388BTR LF2388BTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F27C32DDFA40CE&compId=LF2388BTR.pdf?ci_sign=0ffe7b00e916e274b61faec0bc85889558573824 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO20
Output current: -750...420mA
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: reel; tape
Voltage class: 600V
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IXTH10P50P IXTH10P50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Reverse recovery time: 414ns
Drain-source voltage: -500V
Drain current: -10A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 50nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
auf Bestellung 290 Stücke:
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10+7.34 EUR
11+6.94 EUR
270+6.68 EUR
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VUO160-12NO7 VUO160-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9A8DFE8BA867D00C1&compId=VUO160-12NO7.pdf?ci_sign=136f747c61c846a4a04c699a7ef63ecfe8b877e7 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.39V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
auf Bestellung 4 Stücke:
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VBO160-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FE6EAF9559E0C4&compId=VBO160-12NO7.pdf?ci_sign=8e8a21a127e0cde42148fe3b754eaf87ebd9d0cd Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 160A; Ifsm: 2.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 160A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
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IXTH6N50D2 IXTH6N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 219 Stücke:
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7+10.72 EUR
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IXTP6N50D2 IXTP6N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.62 EUR
12+6.29 EUR
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IXTA08N100D2 IXTA08N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D5010345B820&compId=IXTA(P%2CY)08N100D2.pdf?ci_sign=ff8d8aff111d8414478644545169c45d10c4ed47 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depletion
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.49 EUR
31+2.33 EUR
33+2.2 EUR
100+2.12 EUR
Mindestbestellmenge: 16
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LAA110L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
LAA110L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: THT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
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LAA110LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
LAA110LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
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LAA110LSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892080C7&compId=LAA100L.pdf?ci_sign=133833099cee8dee4dfa302627eb4b749f2b8824
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
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LAA110PLTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
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LAA110PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
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LAA110STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
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PAA110LSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
Produkt ist nicht verfügbar
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PAA110PLTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
Produkt ist nicht verfügbar
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PAA110STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 0.25ms
Produkt ist nicht verfügbar
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XAA117PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
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XAA117STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
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IXTN30N100L pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA762DDC51FD820&compId=IXTN30N100L.pdf?ci_sign=1267cd27b10289fdcc054aa2d6c82d9805b1b00e
IXTN30N100L
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.45Ω
Gate charge: 545nC
Kind of channel: enhancement
Reverse recovery time: 1µs
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Technology: Linear™
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXTB30N100L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B916FF820&compId=IXTB30N100L.pdf?ci_sign=733db101b859fd094ce1250c8d84c21345092274
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXTA130N10T pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEFB1FFB9060D2&compId=IXTA130N10T.PDF?ci_sign=69dce128b1e5f50f401f8f86e0fd7cb4446cbc18
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
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IXTA130N10T-TRL pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEFB1FFB9060D2&compId=IXTA130N10T.PDF?ci_sign=69dce128b1e5f50f401f8f86e0fd7cb4446cbc18
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
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IXTA130N10T7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEF7B5A4BC20D2&compId=IXTA130N10T7.PDF?ci_sign=72380c18aa9ffac0654aa9ca714129b806c8c025
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
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DPG80C300HB DPG80C300HB.pdf
DPG80C300HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 40Ax2; tube; Ifsm: 450A; TO247-3; 215W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.36V
Load current: 40A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.45kA
Power dissipation: 215W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.15 EUR
11+6.56 EUR
12+6.21 EUR
Mindestbestellmenge: 8
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DPG30C300PB Littelfuse-Power-Semiconductors-DPG30C300PB-Datasheet?assetguid=C29230B4-702B-4553-95E4-41ABDC8A3A6D
DPG30C300PB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.26V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.75 EUR
21+3.42 EUR
27+2.7 EUR
29+2.55 EUR
Mindestbestellmenge: 20
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DPG60C300QB Littelfuse-Power-Semiconductors-DPG60C300QB-Datasheet?assetguid=38393FCB-5AF1-4A3C-B2C9-F6797A3D1C35
DPG60C300QB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO3P
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.69 EUR
15+5.03 EUR
16+4.76 EUR
30+4.58 EUR
Mindestbestellmenge: 10
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DPF60C300HB DPF60C300HB.pdf
DPF60C300HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 0.97V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.4kA
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.98 EUR
10+7.16 EUR
11+6.76 EUR
Mindestbestellmenge: 8
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DPG30C300HB Littelfuse-Power-Semiconductors-DPG30C300HB-Datasheet?assetguid=0400F707-7AFD-48EB-9257-C3597E59CCC5
DPG30C300HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.25V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.52 EUR
26+2.85 EUR
27+2.69 EUR
Mindestbestellmenge: 13
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LF2190NTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F2BB37B19F40CE&compId=LF2190NTR.pdf?ci_sign=ffb9a783e484bf36f1f603b30141cdcfee16c247
LF2190NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4.5...4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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IXTQ470P2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13FF820&compId=IXTQ470P2.pdf?ci_sign=76af40f262edd6db225179a4687589ac6121f39b
IXTQ470P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 42A
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTN102N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9E6330B4C1820&compId=IXTN102N65X2.pdf?ci_sign=9e7b58dfb51537d8509f57c064d3549be58d17de
IXTN102N65X2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 76A
Pulsed drain current: 204A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 30mΩ
Gate charge: 152nC
Kind of channel: enhancement
Electrical mounting: screw
Technology: X2-Class
Reverse recovery time: 450ns
Semiconductor structure: single transistor
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXTH52N65X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B49515820&compId=IXTH52N65X.pdf?ci_sign=09c23fcab68d044a472f91698252bd936ba7f5b5
IXTH52N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 52A; 660W; TO247-3; 435ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 52A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 435ns
Produkt ist nicht verfügbar
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IXTH62N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B4952B820&compId=IXTH62N65X2.pdf?ci_sign=36d0efac15306422ef53e7207db6fd4a2fefb0ff
IXTH62N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 62A
Power dissipation: 780W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 445ns
Produkt ist nicht verfügbar
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IXTP32N65X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC14A9F2EB3820&compId=IXTH(P%2CQ)32N65X.pdf?ci_sign=6a88174097b72279f3942c45d4c91b42e2da5718
IXTP32N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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MKE38RK600DFELB MKE38RK600DFELB.pdf
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor
Mounting: SMD
Drain current: 50A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Reverse recovery time: 50ns
Semiconductor structure: diode/transistor
Polarisation: unipolar
Gate charge: 0.19µC
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 600V
Case: SMPD
Produkt ist nicht verfügbar
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IXBH12N300 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1CDC51AD698BF&compId=IXBH12N300_IXBT12N300.pdf?ci_sign=3b269cdf731a85c5368096fbeac6275dcc1a9602
IXBH12N300
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Collector current: 12A
Pulsed collector current: 100A
Turn-on time: 460ns
Turn-off time: 705ns
Type of transistor: IGBT
Power dissipation: 160W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 62nC
Technology: BiMOSFET™; FRED
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXFH180N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9B97FB5BF8BF&compId=IXF_180N20X3_HV.pdf?ci_sign=4ec3cef28c972acaa6fe64b5c7693252f804b337 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFH180N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Mounting: THT
Reverse recovery time: 94ns
Drain-source voltage: 200V
Drain current: 180A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Kind of package: tube
Gate charge: 154nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO247-3
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.23 EUR
5+14.7 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXTH120P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7
IXTH120P065T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Produkt ist nicht verfügbar
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LDA100STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDA918501264977E0C4&compId=LDA100.pdf?ci_sign=0df13f6bb6df9ec51f42cec731e0e06baae7cfed
LDA100STR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
86+0.83 EUR
138+0.52 EUR
145+0.49 EUR
Mindestbestellmenge: 73
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LDA100 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA918501264977E0C4&compId=LDA100.pdf?ci_sign=0df13f6bb6df9ec51f42cec731e0e06baae7cfed
LDA100
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 3.75kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Kind of output: transistor
Case: DIP6
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.93 EUR
Mindestbestellmenge: 37
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LDA100S pVersion=0046&contRep=ZT&docId=005056AB90B41EDA918501264977E0C4&compId=LDA100.pdf?ci_sign=0df13f6bb6df9ec51f42cec731e0e06baae7cfed
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
Produkt ist nicht verfügbar
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IXFT140N20X3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFT140N20X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXTQ76N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4165ECB579820&compId=IXTA(H%2CI%2CP%2CQ)76N25T.pdf?ci_sign=5561f98ce5cfa59f8e5ad5e0fac5ca227be0863e
IXTQ76N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO3P; 148ns
Case: TO3P
Mounting: THT
Kind of package: tube
Power dissipation: 460W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 92nC
Kind of channel: enhancement
Reverse recovery time: 148ns
Drain-source voltage: 250V
Drain current: 76A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.84 EUR
14+5.15 EUR
120+4.96 EUR
Mindestbestellmenge: 10
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CS30-12IO1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C4E460781E27&compId=CS30-12IO1-DTE.pdf?ci_sign=e71831bbd611d0d403ce659e4ecabb1a51f3954c
CS30-12IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO247AD
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 55mA
auf Bestellung 271 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.01 EUR
15+5 EUR
16+4.73 EUR
30+4.7 EUR
Mindestbestellmenge: 9
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IXFN140N20P description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C66907012B8BF&compId=IXFN140N20P.pdf?ci_sign=a0e4bc6acd78ecb9536f9dcaae8667685d73f53e
IXFN140N20P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Electrical mounting: screw
Mechanical mounting: screw
Technology: HiPerFET™; Polar™
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXFR140N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6AB1820&compId=IXFR140N20P.pdf?ci_sign=b301331a199d3b8298da379b97dfd03e718d0239
IXFR140N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK140N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94595727F820&compId=IXFK140N20P.pdf?ci_sign=d20ac8ee9e68221e8632f05c33f67c84eb8fecee
IXFK140N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTK140N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF91769AF6A03E27&compId=IXTK140N20P-DTE.pdf?ci_sign=08600a905672f16d4200168350a2bb2948e0f97d
IXTK140N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: PolarHT™
Produkt ist nicht verfügbar
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IXFH140N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFH140N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.34 EUR
6+12.3 EUR
7+11.63 EUR
Mindestbestellmenge: 5
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IXTK22N100L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD1D9980B2F820&compId=IXTK(X)22N100L.pdf?ci_sign=0615493c1b1063422d61a154cca03734f6f66ba8
IXTK22N100L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; TO264; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
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IXFZ520N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC6B5820&compId=IXFZ520N075T2.pdf?ci_sign=26fb6a6e5211b58faa65984db5ccbca3e0448fe4
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 420A
Power dissipation: 600W
Case: DE475
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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DPF80C200HB DPF80C200HB.pdf
DPF80C200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 1.22V
Load current: 40A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 55ns
Max. forward impulse current: 560A
Power dissipation: 215W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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DPG60C200HB Littelfuse-Power-Semiconductors-DPG60C200HB-Datasheet?assetguid=87B6D095-C8C9-4D2A-9030-B3214D70FAF8
DPG60C200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.28 EUR
11+6.55 EUR
14+5.21 EUR
15+4.92 EUR
Mindestbestellmenge: 10
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DPG60C200QB Littelfuse-Power-Semiconductors-DPG60C200QB-Datasheet?assetguid=1B2C1EA9-F199-4CC1-83AF-AEB704688BF1
DPG60C200QB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Case: TO3P
Max. off-state voltage: 200V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.15 EUR
24+3.09 EUR
25+2.92 EUR
Mindestbestellmenge: 14
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DPG30C200PB media?resourcetype=datasheets&itemid=414E16FE-8690-49CD-8C7F-B7A69B76A7C3&filename=Littelfuse-Power-Semiconductors-DPG30C200PB-Datasheet
DPG30C200PB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Case: TO220AB
Max. off-state voltage: 200V
Max. forward voltage: 1.26V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.92 EUR
42+1.73 EUR
47+1.53 EUR
49+1.47 EUR
52+1.4 EUR
Mindestbestellmenge: 38
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DPF60C200HJ DPF60C200HB.pdf
DPF60C200HJ
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™
Case: ISOPLUS247™
Max. off-state voltage: 200V
Max. forward voltage: 0.88V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 560A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.32 EUR
19+3.89 EUR
20+3.6 EUR
21+3.45 EUR
22+3.4 EUR
30+3.27 EUR
Mindestbestellmenge: 17
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DPG30C200HB media?resourcetype=datasheets&itemid=C7522524-F8A5-4F62-BC19-FCC564D51D7C&filename=Littelfuse-Power-Semiconductors-DPG30C200HB-Datasheet
DPG30C200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 1.25V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.19 EUR
24+2.97 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
DPF60C200HB
DPF60C200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 400A; TO247-3
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 0.91V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXTP32P05T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0CA1113E4F8BF&compId=IXT_32P05T.pdf?ci_sign=db5aa0628442a2ab696c43214df8755287bd452e
IXTP32P05T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Mounting: THT
Case: TO220AB
Reverse recovery time: 26ns
Drain-source voltage: -50V
Drain current: -32A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Kind of package: tube
Gate charge: 46nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.11 EUR
Mindestbestellmenge: 14
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IXTP32P20T pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EF0A8A8C018BF&compId=IXT_32P20T.pdf?ci_sign=6bc8fc2e384d370d1b27158e2571e9d58c0bf6c0
IXTP32P20T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Mounting: THT
Case: TO220AB
Reverse recovery time: 190ns
Drain-source voltage: -200V
Drain current: -32A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.18 EUR
10+7.31 EUR
250+7.02 EUR
Mindestbestellmenge: 8
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LF2388BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F27C32DDFA40CE&compId=LF2388BTR.pdf?ci_sign=0ffe7b00e916e274b61faec0bc85889558573824
LF2388BTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO20
Output current: -750...420mA
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: reel; tape
Voltage class: 600V
Produkt ist nicht verfügbar
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IXTH10P50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e
IXTH10P50P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Reverse recovery time: 414ns
Drain-source voltage: -500V
Drain current: -10A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 50nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.55 EUR
10+7.34 EUR
11+6.94 EUR
270+6.68 EUR
Mindestbestellmenge: 8
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VUO160-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9A8DFE8BA867D00C1&compId=VUO160-12NO7.pdf?ci_sign=136f747c61c846a4a04c699a7ef63ecfe8b877e7
VUO160-12NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.39V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+72.32 EUR
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VBO160-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FE6EAF9559E0C4&compId=VBO160-12NO7.pdf?ci_sign=8e8a21a127e0cde42148fe3b754eaf87ebd9d0cd
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 160A; Ifsm: 2.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 160A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXTH6N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187
IXTH6N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.72 EUR
11+6.84 EUR
12+6.46 EUR
Mindestbestellmenge: 7
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IXTP6N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187
IXTP6N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.62 EUR
12+6.29 EUR
13+5.95 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTA08N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D5010345B820&compId=IXTA(P%2CY)08N100D2.pdf?ci_sign=ff8d8aff111d8414478644545169c45d10c4ed47
IXTA08N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depletion
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.49 EUR
31+2.33 EUR
33+2.2 EUR
100+2.12 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
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