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IXGT16N170 IXGT16N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAB99F1D44C151BF&compId=IXGH16N170-DTE.pdf?ci_sign=03a18b66e5d35198e9e236f78cf7b52f7cc4d616 Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO268
Technology: NPT
Mounting: SMD
Gate charge: 78nC
Turn-on time: 90ns
Turn-off time: 1.6µs
Collector current: 16A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 190W
Collector-emitter voltage: 1.7kV
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IXGT16N170AH1 IXGT16N170AH1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38 Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO268
Technology: NPT
Mounting: SMD
Gate charge: 70nC
Turn-on time: 35ns
Turn-off time: 298ns
Collector current: 11A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 190W
Collector-emitter voltage: 1.7kV
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DSEP30-06A DSEP30-06A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEEE99375004143&compId=DSEP30-06A.pdf?ci_sign=c8282cd2e443bb79a372024573e7f8566338ba13 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-2
Max. forward voltage: 1.25V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
auf Bestellung 118 Stücke:
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12+6.42 EUR
17+4.38 EUR
18+4.13 EUR
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MDI550-12A4 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Topology: buck chopper
Type of semiconductor module: IGBT
Electrical mounting: FASTON connectors; screw
Technology: NPT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 460A
Power dissipation: 2.75kW
Pulsed collector current: 800A
Application: motors
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MID550-12A4 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Topology: boost chopper
Type of semiconductor module: IGBT
Electrical mounting: FASTON connectors; screw
Technology: NPT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 460A
Power dissipation: 2.75kW
Pulsed collector current: 800A
Application: motors
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IXYX100N65B3D1 IXYX100N65B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA0A653400D820&compId=IXYK(X)100N65B3D1.pdf?ci_sign=29e34974f09b886b51d47c049d0e1b1e87e61953 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Mounting: THT
Kind of package: tube
Case: PLUS247™
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Turn-on time: 65ns
Gate charge: 168nC
Turn-off time: 358ns
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 830W
Pulsed collector current: 460A
Collector-emitter voltage: 650V
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IXYX50N170C IXYX50N170C IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFAFE24D2B1820&compId=IXYX50N170C.pdf?ci_sign=de7b52736671be5add389053da061b99ba78f92b Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Mounting: THT
Features of semiconductor devices: high voltage
Kind of package: tube
Case: PLUS247™
Technology: XPT™
Type of transistor: IGBT
Turn-on time: 62ns
Gate charge: 260nC
Turn-off time: 396ns
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 1.5kW
Pulsed collector current: 460A
Collector-emitter voltage: 1.7kV
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IXYN100N65A3 IXYN100N65A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F33397FE939820&compId=IXYN100N65A3.pdf?ci_sign=3d698a620938f9cbdfed9167de4b750ccfecfb9b Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Max. off-state voltage: 650V
Semiconductor structure: single transistor
Case: SOT227B
Type of semiconductor module: IGBT
Electrical mounting: screw
Technology: GenX3™; XPT™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 600W
Pulsed collector current: 460A
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IXYN100N120C3 IXYN100N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F32D2A06CC7820&compId=IXYN100N120C3.pdf?ci_sign=a8e6af9285efcccbc7657d6ea988b565cc631405 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 84A; SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Case: SOT227B
Type of semiconductor module: IGBT
Electrical mounting: screw
Technology: GenX3™; XPT™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 84A
Power dissipation: 830W
Pulsed collector current: 460A
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IXFX250N10P IXFX250N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB36DB3D55820&compId=IXFK(X)250N10P.pdf?ci_sign=8ea7e81bf2d9e3c41b4632496dce0444a2a01043 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 250A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhancement
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IXBOD1-36R IXBOD1-36R IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4 Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.6kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.6kV
Kind of package: bulk
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1+116.29 EUR
20+114.39 EUR
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IXBOD1-38R IXBOD1-38R IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4 Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.8kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.8kV
Kind of package: bulk
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1+116 EUR
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IXGH50N90B2 IXGH50N90B2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAABAECC3241820&compId=IXGH(T)50N90B2.pdf?ci_sign=069ecfae63b9b0cb00f5b2086e78ae27d0bcd488 Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Mounting: THT
Technology: HiPerFAST™; XPT™
Type of transistor: IGBT
Kind of package: tube
Turn-on time: 48ns
Gate charge: 135nC
Turn-off time: 820ns
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 900V
Pulsed collector current: 200A
Power dissipation: 400W
Case: TO247-3
auf Bestellung 132 Stücke:
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8+9.15 EUR
10+7.19 EUR
11+6.79 EUR
30+6.55 EUR
Mindestbestellmenge: 8
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IXGH50N90B2D1 IXGH50N90B2D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A96FD8C4E898BF&compId=IXG_50N90B2D1.pdf?ci_sign=f4cd4c51dbcce9e2ffad27c4bb510a6a965450cf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Mounting: THT
Technology: GenX3™; HiPerFAST™; PT
Type of transistor: IGBT
Kind of package: tube
Turn-on time: 48ns
Gate charge: 135nC
Turn-off time: 820ns
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 900V
Pulsed collector current: 200A
Power dissipation: 400W
Case: TO247-3
auf Bestellung 262 Stücke:
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5+15.92 EUR
8+9.15 EUR
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IXGH48N60A3 IXGH48N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE53B33B1DDB820&compId=IXGA(P%2CH)48N60A3.pdf?ci_sign=3de66c7eadd74b16b8875cd3a050200178617cff Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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IXGH2N250 IXGH2N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFE9F6304CF820&compId=IXGH2N250.pdf?ci_sign=139bab15db439c626267cbd44ebcd44f0138782d Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 2A
Power dissipation: 32W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 13.5A
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 278ns
Features of semiconductor devices: high voltage
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IXGH30N120B3D1 IXGH30N120B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA06EEB189820&compId=IXGH(t)30N120B3D1.pdf?ci_sign=f005ac054c26db1cc4211835ea92d6b297ff6ef3 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
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IXGH32N120A3 IXGH32N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACC2AE51233820&compId=IXGH(t)32N120A3.pdf?ci_sign=146fd5db7b9b749a16964dac4288ffe02f291c06 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 239ns
Turn-off time: 1.38µs
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IXGH120N30B3 IXGH120N30B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE9057987A0B820&compId=IXGH120N30B3.pdf?ci_sign=5d584af9080f9df46127c6c1317b6168218acf27 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 120A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 356ns
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IXGH25N250 IXGH25N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB00DD7512F1820&compId=IXGH25N250.pdf?ci_sign=37672af961a987aa06f6a3c92f025fec780b03e0 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 301ns
Turn-off time: 409ns
Features of semiconductor devices: high voltage
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IXGH50N120C3 IXGH50N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD246A67187820&compId=IXGH50N120C3.pdf?ci_sign=38e9870a4fb4296be0a0bbda74474af0275c3fb6 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
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IXGH120N30C3 IXGH120N30C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE90C387DF7F820&compId=IXGH120N30C3.pdf?ci_sign=65f99932f05996cb78f8e73991c500d0b7beb82f Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 120A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 233ns
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IXGH25N160 IXGH25N160 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE2D104B897820&compId=IXGH(T)25N160.pdf?ci_sign=cb53774ff2fd2307076286b94f4d40db8e75e75f Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
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IXGH28N60B3D1 IXGH28N60B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA0D5F6D5F1820&compId=IXGH28N60B3D1.pdf?ci_sign=6f6b95dccb0524e7c091ba3fc038cb10729717c2 Category: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
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IXGH30N120C3H1 IXGH30N120C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA4B1CC0B7820&compId=IXGH30N120C3H1.pdf?ci_sign=694f2b1a47c19f56311ca2c2939981f504873c81 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 415ns
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IXGH48N60A3D1 IXGH48N60A3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BF9565086117820&compId=IXGH48N60A3D1.pdf?ci_sign=79ff2f016eec2a4ab098ef5c133c0a1a4d151380 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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IXGH60N60C3 IXGH60N60C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA41F4BD5B5820&compId=IXGH60N60C3.pdf?ci_sign=7f9cf4d3e178e853c7219787575b52af9600ca35 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
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CPC1786J CPC1786J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F1680C7&compId=CPC1786.pdf?ci_sign=edf7b5af3d387d0c9c1e5db95ba40db3dea171e3 Category: DC Solid State Relays
Description: Relay: solid state; 800mA; max.1kVDC; THT; i4-pac; OptoMOS; 2Ω
Relay variant: current source
Case: i4-pac
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Mounting: THT
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Turn-on time: 20ms
Control current max.: 100mA
Max. operating current: 0.8A
On-state resistance: 2Ω
Switched voltage: max. 1kV DC
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
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DMA90U1800LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87FF96875C80C0C4&compId=DMA90U1800LB.pdf?ci_sign=bcc21b297e8d57d587ae333632f36e7a41cdf83b Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A
Type of bridge rectifier: three-phase
Electrical mounting: SMT
Max. forward voltage: 1.26V
Load current: 90A
Max. forward impulse current: 350A
Max. off-state voltage: 1.8kV
Case: SMPD
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IXTP18P10T IXTP18P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09340E5AD58BF&compId=IXT_18P10T.pdf?ci_sign=af2eea40a1c7a689ec6646ea661f0ab19498cc5b Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Case: TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Gate charge: 39nC
Reverse recovery time: 62ns
On-state resistance: 0.12Ω
Gate-source voltage: ±15V
Power dissipation: 83W
Kind of channel: enhancement
auf Bestellung 92 Stücke:
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19+3.93 EUR
40+1.79 EUR
43+1.69 EUR
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IXA70I1200NA IXA70I1200NA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2CDC3016C5820&compId=IXA70I1200NA.pdf?ci_sign=1464344c37dfa780e4641b18a4a9fec667ded4ae Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Collector current: 65A
Power dissipation: 350W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: high voltage
Semiconductor structure: single transistor
Technology: XPT™
Type of semiconductor module: IGBT
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
2+40.18 EUR
3+40.17 EUR
10+39.54 EUR
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DSEP6-06AS DSEP6-06AS IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD5BE4C1F7A18BF&compId=DSEP6-06AS.pdf?ci_sign=85882eaa9700f0710dfe9d0880c1bc7d8d041406 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; 20ns; DPAK; Ufmax: 1.34V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 20ns
Max. forward voltage: 1.34V
Max. forward impulse current: 40A
Power dissipation: 55W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
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DSEP6-06BS-TRL IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4ADE89547C0C4&compId=DSEP6-06BS.pdf?ci_sign=968149a93bfb97759a7c211ab3bb3ace53f31304 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; 15ns; DPAK; Ufmax: 1.77V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 15ns
Max. forward voltage: 1.77V
Max. forward impulse current: 40A
Power dissipation: 55W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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IXTP230N075T2 IXTP230N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD06B56D7B7820&compId=IXTA(P)230N075T2.pdf?ci_sign=435f3b950c6a5ee63f1c4c17cf1a54b753421988 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
auf Bestellung 35 Stücke:
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10+7.29 EUR
14+5.18 EUR
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IXFA230N075T2 IXFA230N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD0BBC1F507820&compId=IXFA(P)230N075T2.pdf?ci_sign=a193bb6c937ab8a381de2b728ab686af5cf3de01 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
auf Bestellung 10 Stücke:
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10+7.15 EUR
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IXFH230N075T2 IXFH230N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F1D820&compId=IXFH230N075T2.pdf?ci_sign=d8900541f87190d286851767bbbf7c7af6459ae7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO247-3; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.54 EUR
10+7.18 EUR
11+6.79 EUR
120+6.66 EUR
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IXFA230N075T2-7 IXFA230N075T2-7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9405C15EB820&compId=IXFA230N075T2-7.pdf?ci_sign=1b2d5f843fc07ea895f6f33fcdd57b9553e3c1a9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
auf Bestellung 13 Stücke:
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9+8.41 EUR
13+5.51 EUR
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LF21844NTR LF21844NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F288800030C0CE&compId=LF21844NTR.pdf?ci_sign=61a040bf0c211a11be4c57b5f6b310fc08b63c69 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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LF2184NTR LF2184NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F2912A55E160CE&compId=LF2184NTR.pdf?ci_sign=ff0473e9710ba1c71df8b5e1d2bcc3920690c9ea Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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MCMA265PD1600KB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80F885DD90E0C4&compId=MCMA265PD1600KB.pdf?ci_sign=698e18d64fb8cc1719c81bb85ab5529b83241ce2 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 268A; Y1-CU; Ufmax: 1.15V; screw
Case: Y1-CU
Semiconductor structure: double series
Electrical mounting: screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.15V
Load current: 268A
Max. load current: 421A
Max. forward impulse current: 8.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MCMA25PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80DD6A73ADE0C4&compId=MCMA25PD1600TB.pdf?ci_sign=736dc4ed2df1376efda2f070951405c5bea4b009 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 25A; TO240AA; Ufmax: 1.25V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 55/80mA
Threshold on-voltage: 0.87V
Max. forward voltage: 1.25V
Load current: 25A
Max. load current: 40A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MCMA85PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD811F443E64C0C4&compId=MCMA85PD1600TB.pdf?ci_sign=272e7fff698eb0479745f9579ed9728abdc529c3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 85A; TO240AA; Ufmax: 1.18V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 95/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.18V
Load current: 85A
Max. load current: 135A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MCMA110PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B04D5E18E0C4&compId=MCMA110PD1600TB.pdf?ci_sign=4b039647ab9d7138ff56499a2acddc4f604ee922 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.21V
Load current: 110A
Max. load current: 170A
Max. forward impulse current: 1.9kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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IXFK100N65X2 IXFK100N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E5CCA0EF7820&compId=IXFK(X)100N65X2.pdf?ci_sign=943e818235cb436b72c8d4fa8bbbd2fba5457b4b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
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IXTA6N50D2 IXTA6N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.9 EUR
9+7.97 EUR
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IXTH6N50D2 IXTH6N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 215 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.72 EUR
11+6.84 EUR
12+6.46 EUR
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IXTP6N50D2 IXTP6N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 160 Stücke:
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8+9.62 EUR
12+5.96 EUR
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IXTP6N100D2 IXTP6N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D45948322AD820&compId=IXTA(H%2CP)6N100D2.pdf?ci_sign=ae2f4eab8381be464d1f510c96b6fa260d11e708 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.21 EUR
9+8.28 EUR
10+7.84 EUR
50+7.71 EUR
Mindestbestellmenge: 7
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CPC3982TTR CPC3982TTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A6583C3D1118BF&compId=CPC3982.pdf?ci_sign=768e2d563e17ec093534afea6845d24c4cb589b3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.15A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 380Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 2851 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
118+0.61 EUR
207+0.35 EUR
219+0.33 EUR
1000+0.31 EUR
Mindestbestellmenge: 103
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CPC5603CTR CPC5603CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A67566F94DB8BF&compId=CPC5603.pdf?ci_sign=e714e258bc789b11f74bf228bdeffe81ffeed81b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 415V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 315 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
96+0.75 EUR
121+0.59 EUR
128+0.56 EUR
Mindestbestellmenge: 76
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CPC3980ZTR CPC3980ZTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE791A01894B3780746&compId=CPC3980.pdf?ci_sign=4477efd49cd6b0ec4bf7ba5fcdd87ec36338421c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 520 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.72 EUR
66+1.09 EUR
79+0.91 EUR
115+0.62 EUR
122+0.59 EUR
500+0.57 EUR
Mindestbestellmenge: 42
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CPC3708CTR CPC3708CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6EE5EB2B07820&compId=CPC3708.pdf?ci_sign=22daf6dfcbd2ce4c3bce7bb6c7b8c06a4717c6f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 2715 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
113+0.63 EUR
141+0.51 EUR
149+0.48 EUR
1000+0.46 EUR
Mindestbestellmenge: 99
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CPC3703CTR CPC3703CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE791A002DE6F22C746&compId=CPC3703.pdf?ci_sign=cdc9bcfb7bdb77eb3d2d4a05f7238b30e900d599 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 1982 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
73+0.99 EUR
134+0.54 EUR
142+0.51 EUR
1000+0.49 EUR
Mindestbestellmenge: 55
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CPC3708ZTR CPC3708ZTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6EE5EB2B07820&compId=CPC3708.pdf?ci_sign=22daf6dfcbd2ce4c3bce7bb6c7b8c06a4717c6f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 885 Stücke:
Lieferzeit 14-21 Tag (e)
82+0.87 EUR
122+0.59 EUR
237+0.3 EUR
250+0.29 EUR
Mindestbestellmenge: 82
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CPC3960ZTR CPC3960ZTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC71CB207519820&compId=CPC3960.pdf?ci_sign=98abdb9ca19f419f79fba375011eb85cc29ea29f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 44Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 939 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
114+0.63 EUR
130+0.55 EUR
137+0.52 EUR
250+0.5 EUR
Mindestbestellmenge: 100
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CPC3902ZTR CPC3902ZTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6DFA5F84F9820&compId=CPC3902.pdf?ci_sign=f60c68197a69999e05253e2148d7740093534ce7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.33 EUR
81+0.89 EUR
151+0.47 EUR
Mindestbestellmenge: 54
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CPC3720CTR CPC3720CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6FEB8A4E29820&compId=CPC3720.pdf?ci_sign=c1cbf9c1b8179c87f7fb0153f8c41f0f7763ed94 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 381 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
182+0.39 EUR
199+0.36 EUR
258+0.28 EUR
274+0.26 EUR
Mindestbestellmenge: 103
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CPC3730CTR CPC3730CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC708F10FBC7820&compId=CPC3730.pdf?ci_sign=2122ae37c6b47f9d655a2287b1f346ae35245869 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.14A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.1 EUR
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IXTP3N50D2 IXTP3N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBCC5F1A4EB820&compId=IXTA(P)3N50D2.pdf?ci_sign=1433b6210e8ee4e73eac19dda6d08b4459ecca40 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 24ns
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.86 EUR
20+3.63 EUR
21+3.43 EUR
50+3.3 EUR
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IXTP3N100D2 IXTP3N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBD9B42C73B820&compId=IXTA(P)3N100D2.pdf?ci_sign=c245ce0cffe79380fadde6d25a375768a49f0754 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.06 EUR
26+2.76 EUR
28+2.62 EUR
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IXGT16N170 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAB99F1D44C151BF&compId=IXGH16N170-DTE.pdf?ci_sign=03a18b66e5d35198e9e236f78cf7b52f7cc4d616
IXGT16N170
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO268
Technology: NPT
Mounting: SMD
Gate charge: 78nC
Turn-on time: 90ns
Turn-off time: 1.6µs
Collector current: 16A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 190W
Collector-emitter voltage: 1.7kV
Produkt ist nicht verfügbar
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IXGT16N170AH1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38
IXGT16N170AH1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO268
Technology: NPT
Mounting: SMD
Gate charge: 70nC
Turn-on time: 35ns
Turn-off time: 298ns
Collector current: 11A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 190W
Collector-emitter voltage: 1.7kV
Produkt ist nicht verfügbar
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DSEP30-06A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEEE99375004143&compId=DSEP30-06A.pdf?ci_sign=c8282cd2e443bb79a372024573e7f8566338ba13
DSEP30-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-2
Max. forward voltage: 1.25V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.42 EUR
17+4.38 EUR
18+4.13 EUR
Mindestbestellmenge: 12
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MDI550-12A4
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Topology: buck chopper
Type of semiconductor module: IGBT
Electrical mounting: FASTON connectors; screw
Technology: NPT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 460A
Power dissipation: 2.75kW
Pulsed collector current: 800A
Application: motors
Produkt ist nicht verfügbar
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MID550-12A4
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Topology: boost chopper
Type of semiconductor module: IGBT
Electrical mounting: FASTON connectors; screw
Technology: NPT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 460A
Power dissipation: 2.75kW
Pulsed collector current: 800A
Application: motors
Produkt ist nicht verfügbar
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IXYX100N65B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA0A653400D820&compId=IXYK(X)100N65B3D1.pdf?ci_sign=29e34974f09b886b51d47c049d0e1b1e87e61953
IXYX100N65B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Mounting: THT
Kind of package: tube
Case: PLUS247™
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Turn-on time: 65ns
Gate charge: 168nC
Turn-off time: 358ns
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 830W
Pulsed collector current: 460A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IXYX50N170C pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFAFE24D2B1820&compId=IXYX50N170C.pdf?ci_sign=de7b52736671be5add389053da061b99ba78f92b
IXYX50N170C
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Mounting: THT
Features of semiconductor devices: high voltage
Kind of package: tube
Case: PLUS247™
Technology: XPT™
Type of transistor: IGBT
Turn-on time: 62ns
Gate charge: 260nC
Turn-off time: 396ns
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 1.5kW
Pulsed collector current: 460A
Collector-emitter voltage: 1.7kV
Produkt ist nicht verfügbar
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IXYN100N65A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F33397FE939820&compId=IXYN100N65A3.pdf?ci_sign=3d698a620938f9cbdfed9167de4b750ccfecfb9b
IXYN100N65A3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Max. off-state voltage: 650V
Semiconductor structure: single transistor
Case: SOT227B
Type of semiconductor module: IGBT
Electrical mounting: screw
Technology: GenX3™; XPT™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 600W
Pulsed collector current: 460A
Produkt ist nicht verfügbar
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IXYN100N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F32D2A06CC7820&compId=IXYN100N120C3.pdf?ci_sign=a8e6af9285efcccbc7657d6ea988b565cc631405
IXYN100N120C3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 84A; SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Case: SOT227B
Type of semiconductor module: IGBT
Electrical mounting: screw
Technology: GenX3™; XPT™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 84A
Power dissipation: 830W
Pulsed collector current: 460A
Produkt ist nicht verfügbar
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IXFX250N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB36DB3D55820&compId=IXFK(X)250N10P.pdf?ci_sign=8ea7e81bf2d9e3c41b4632496dce0444a2a01043
IXFX250N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 250A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXBOD1-36R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4
IXBOD1-36R
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.6kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.6kV
Kind of package: bulk
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+116.29 EUR
20+114.39 EUR
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IXBOD1-38R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4
IXBOD1-38R
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.8kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.8kV
Kind of package: bulk
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+116 EUR
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IXGH50N90B2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAABAECC3241820&compId=IXGH(T)50N90B2.pdf?ci_sign=069ecfae63b9b0cb00f5b2086e78ae27d0bcd488
IXGH50N90B2
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Mounting: THT
Technology: HiPerFAST™; XPT™
Type of transistor: IGBT
Kind of package: tube
Turn-on time: 48ns
Gate charge: 135nC
Turn-off time: 820ns
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 900V
Pulsed collector current: 200A
Power dissipation: 400W
Case: TO247-3
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.15 EUR
10+7.19 EUR
11+6.79 EUR
30+6.55 EUR
Mindestbestellmenge: 8
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IXGH50N90B2D1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A96FD8C4E898BF&compId=IXG_50N90B2D1.pdf?ci_sign=f4cd4c51dbcce9e2ffad27c4bb510a6a965450cf
IXGH50N90B2D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Mounting: THT
Technology: GenX3™; HiPerFAST™; PT
Type of transistor: IGBT
Kind of package: tube
Turn-on time: 48ns
Gate charge: 135nC
Turn-off time: 820ns
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 900V
Pulsed collector current: 200A
Power dissipation: 400W
Case: TO247-3
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.92 EUR
8+9.15 EUR
Mindestbestellmenge: 5
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IXGH48N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE53B33B1DDB820&compId=IXGA(P%2CH)48N60A3.pdf?ci_sign=3de66c7eadd74b16b8875cd3a050200178617cff
IXGH48N60A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Produkt ist nicht verfügbar
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IXGH2N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFE9F6304CF820&compId=IXGH2N250.pdf?ci_sign=139bab15db439c626267cbd44ebcd44f0138782d
IXGH2N250
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 2A
Power dissipation: 32W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 13.5A
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 278ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXGH30N120B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA06EEB189820&compId=IXGH(t)30N120B3D1.pdf?ci_sign=f005ac054c26db1cc4211835ea92d6b297ff6ef3
IXGH30N120B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
Produkt ist nicht verfügbar
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IXGH32N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACC2AE51233820&compId=IXGH(t)32N120A3.pdf?ci_sign=146fd5db7b9b749a16964dac4288ffe02f291c06
IXGH32N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 239ns
Turn-off time: 1.38µs
Produkt ist nicht verfügbar
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IXGH120N30B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE9057987A0B820&compId=IXGH120N30B3.pdf?ci_sign=5d584af9080f9df46127c6c1317b6168218acf27
IXGH120N30B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 120A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 356ns
Produkt ist nicht verfügbar
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IXGH25N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB00DD7512F1820&compId=IXGH25N250.pdf?ci_sign=37672af961a987aa06f6a3c92f025fec780b03e0
IXGH25N250
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 301ns
Turn-off time: 409ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXGH50N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD246A67187820&compId=IXGH50N120C3.pdf?ci_sign=38e9870a4fb4296be0a0bbda74474af0275c3fb6
IXGH50N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
Produkt ist nicht verfügbar
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IXGH120N30C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE90C387DF7F820&compId=IXGH120N30C3.pdf?ci_sign=65f99932f05996cb78f8e73991c500d0b7beb82f
IXGH120N30C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 120A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 233ns
Produkt ist nicht verfügbar
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IXGH25N160 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE2D104B897820&compId=IXGH(T)25N160.pdf?ci_sign=cb53774ff2fd2307076286b94f4d40db8e75e75f
IXGH25N160
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXGH28N60B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA0D5F6D5F1820&compId=IXGH28N60B3D1.pdf?ci_sign=6f6b95dccb0524e7c091ba3fc038cb10729717c2
IXGH28N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
Produkt ist nicht verfügbar
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IXGH30N120C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA4B1CC0B7820&compId=IXGH30N120C3H1.pdf?ci_sign=694f2b1a47c19f56311ca2c2939981f504873c81
IXGH30N120C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 415ns
Produkt ist nicht verfügbar
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IXGH48N60A3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BF9565086117820&compId=IXGH48N60A3D1.pdf?ci_sign=79ff2f016eec2a4ab098ef5c133c0a1a4d151380
IXGH48N60A3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Produkt ist nicht verfügbar
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IXGH60N60C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA41F4BD5B5820&compId=IXGH60N60C3.pdf?ci_sign=7f9cf4d3e178e853c7219787575b52af9600ca35
IXGH60N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
Produkt ist nicht verfügbar
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CPC1786J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F1680C7&compId=CPC1786.pdf?ci_sign=edf7b5af3d387d0c9c1e5db95ba40db3dea171e3
CPC1786J
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 800mA; max.1kVDC; THT; i4-pac; OptoMOS; 2Ω
Relay variant: current source
Case: i4-pac
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Mounting: THT
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Turn-on time: 20ms
Control current max.: 100mA
Max. operating current: 0.8A
On-state resistance: 2Ω
Switched voltage: max. 1kV DC
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
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DMA90U1800LB-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87FF96875C80C0C4&compId=DMA90U1800LB.pdf?ci_sign=bcc21b297e8d57d587ae333632f36e7a41cdf83b
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A
Type of bridge rectifier: three-phase
Electrical mounting: SMT
Max. forward voltage: 1.26V
Load current: 90A
Max. forward impulse current: 350A
Max. off-state voltage: 1.8kV
Case: SMPD
Produkt ist nicht verfügbar
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IXTP18P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09340E5AD58BF&compId=IXT_18P10T.pdf?ci_sign=af2eea40a1c7a689ec6646ea661f0ab19498cc5b
IXTP18P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Case: TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Gate charge: 39nC
Reverse recovery time: 62ns
On-state resistance: 0.12Ω
Gate-source voltage: ±15V
Power dissipation: 83W
Kind of channel: enhancement
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
40+1.79 EUR
43+1.69 EUR
Mindestbestellmenge: 19
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IXA70I1200NA pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2CDC3016C5820&compId=IXA70I1200NA.pdf?ci_sign=1464344c37dfa780e4641b18a4a9fec667ded4ae
IXA70I1200NA
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Collector current: 65A
Power dissipation: 350W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: high voltage
Semiconductor structure: single transistor
Technology: XPT™
Type of semiconductor module: IGBT
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+40.18 EUR
3+40.17 EUR
10+39.54 EUR
Mindestbestellmenge: 2
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DSEP6-06AS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD5BE4C1F7A18BF&compId=DSEP6-06AS.pdf?ci_sign=85882eaa9700f0710dfe9d0880c1bc7d8d041406
DSEP6-06AS
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; 20ns; DPAK; Ufmax: 1.34V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 20ns
Max. forward voltage: 1.34V
Max. forward impulse current: 40A
Power dissipation: 55W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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DSEP6-06BS-TRL pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4ADE89547C0C4&compId=DSEP6-06BS.pdf?ci_sign=968149a93bfb97759a7c211ab3bb3ace53f31304
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; 15ns; DPAK; Ufmax: 1.77V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 15ns
Max. forward voltage: 1.77V
Max. forward impulse current: 40A
Power dissipation: 55W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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IXTP230N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD06B56D7B7820&compId=IXTA(P)230N075T2.pdf?ci_sign=435f3b950c6a5ee63f1c4c17cf1a54b753421988
IXTP230N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.29 EUR
14+5.18 EUR
Mindestbestellmenge: 10
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IXFA230N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD0BBC1F507820&compId=IXFA(P)230N075T2.pdf?ci_sign=a193bb6c937ab8a381de2b728ab686af5cf3de01
IXFA230N075T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
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IXFH230N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F1D820&compId=IXFH230N075T2.pdf?ci_sign=d8900541f87190d286851767bbbf7c7af6459ae7
IXFH230N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO247-3; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.54 EUR
10+7.18 EUR
11+6.79 EUR
120+6.66 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFA230N075T2-7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9405C15EB820&compId=IXFA230N075T2-7.pdf?ci_sign=1b2d5f843fc07ea895f6f33fcdd57b9553e3c1a9
IXFA230N075T2-7
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.41 EUR
13+5.51 EUR
Mindestbestellmenge: 9
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LF21844NTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F288800030C0CE&compId=LF21844NTR.pdf?ci_sign=61a040bf0c211a11be4c57b5f6b310fc08b63c69
LF21844NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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LF2184NTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F2912A55E160CE&compId=LF2184NTR.pdf?ci_sign=ff0473e9710ba1c71df8b5e1d2bcc3920690c9ea
LF2184NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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MCMA265PD1600KB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80F885DD90E0C4&compId=MCMA265PD1600KB.pdf?ci_sign=698e18d64fb8cc1719c81bb85ab5529b83241ce2
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 268A; Y1-CU; Ufmax: 1.15V; screw
Case: Y1-CU
Semiconductor structure: double series
Electrical mounting: screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.15V
Load current: 268A
Max. load current: 421A
Max. forward impulse current: 8.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MCMA25PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80DD6A73ADE0C4&compId=MCMA25PD1600TB.pdf?ci_sign=736dc4ed2df1376efda2f070951405c5bea4b009 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 25A; TO240AA; Ufmax: 1.25V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 55/80mA
Threshold on-voltage: 0.87V
Max. forward voltage: 1.25V
Load current: 25A
Max. load current: 40A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MCMA85PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD811F443E64C0C4&compId=MCMA85PD1600TB.pdf?ci_sign=272e7fff698eb0479745f9579ed9728abdc529c3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 85A; TO240AA; Ufmax: 1.18V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 95/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.18V
Load current: 85A
Max. load current: 135A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MCMA110PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B04D5E18E0C4&compId=MCMA110PD1600TB.pdf?ci_sign=4b039647ab9d7138ff56499a2acddc4f604ee922 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.21V
Load current: 110A
Max. load current: 170A
Max. forward impulse current: 1.9kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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IXFK100N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E5CCA0EF7820&compId=IXFK(X)100N65X2.pdf?ci_sign=943e818235cb436b72c8d4fa8bbbd2fba5457b4b
IXFK100N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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IXTA6N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187
IXTA6N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.9 EUR
9+7.97 EUR
Mindestbestellmenge: 7
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IXTH6N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187
IXTH6N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 215 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.72 EUR
11+6.84 EUR
12+6.46 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTP6N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187
IXTP6N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.62 EUR
12+5.96 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTP6N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D45948322AD820&compId=IXTA(H%2CP)6N100D2.pdf?ci_sign=ae2f4eab8381be464d1f510c96b6fa260d11e708
IXTP6N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.21 EUR
9+8.28 EUR
10+7.84 EUR
50+7.71 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
CPC3982TTR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A6583C3D1118BF&compId=CPC3982.pdf?ci_sign=768e2d563e17ec093534afea6845d24c4cb589b3
CPC3982TTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.15A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 380Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 2851 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
118+0.61 EUR
207+0.35 EUR
219+0.33 EUR
1000+0.31 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
CPC5603CTR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A67566F94DB8BF&compId=CPC5603.pdf?ci_sign=e714e258bc789b11f74bf228bdeffe81ffeed81b
CPC5603CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 415V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 315 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
96+0.75 EUR
121+0.59 EUR
128+0.56 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
CPC3980ZTR pVersion=0046&contRep=ZT&docId=005056AB752F1EE791A01894B3780746&compId=CPC3980.pdf?ci_sign=4477efd49cd6b0ec4bf7ba5fcdd87ec36338421c
CPC3980ZTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 520 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
66+1.09 EUR
79+0.91 EUR
115+0.62 EUR
122+0.59 EUR
500+0.57 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
CPC3708CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6EE5EB2B07820&compId=CPC3708.pdf?ci_sign=22daf6dfcbd2ce4c3bce7bb6c7b8c06a4717c6f1
CPC3708CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 2715 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
113+0.63 EUR
141+0.51 EUR
149+0.48 EUR
1000+0.46 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
CPC3703CTR pVersion=0046&contRep=ZT&docId=005056AB752F1EE791A002DE6F22C746&compId=CPC3703.pdf?ci_sign=cdc9bcfb7bdb77eb3d2d4a05f7238b30e900d599
CPC3703CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 1982 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
73+0.99 EUR
134+0.54 EUR
142+0.51 EUR
1000+0.49 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
CPC3708ZTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6EE5EB2B07820&compId=CPC3708.pdf?ci_sign=22daf6dfcbd2ce4c3bce7bb6c7b8c06a4717c6f1
CPC3708ZTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 885 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
122+0.59 EUR
237+0.3 EUR
250+0.29 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
CPC3960ZTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC71CB207519820&compId=CPC3960.pdf?ci_sign=98abdb9ca19f419f79fba375011eb85cc29ea29f
CPC3960ZTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 44Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 939 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
114+0.63 EUR
130+0.55 EUR
137+0.52 EUR
250+0.5 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
CPC3902ZTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6DFA5F84F9820&compId=CPC3902.pdf?ci_sign=f60c68197a69999e05253e2148d7740093534ce7
CPC3902ZTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
81+0.89 EUR
151+0.47 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
CPC3720CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6FEB8A4E29820&compId=CPC3720.pdf?ci_sign=c1cbf9c1b8179c87f7fb0153f8c41f0f7763ed94
CPC3720CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 381 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
182+0.39 EUR
199+0.36 EUR
258+0.28 EUR
274+0.26 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
CPC3730CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC708F10FBC7820&compId=CPC3730.pdf?ci_sign=2122ae37c6b47f9d655a2287b1f346ae35245869
CPC3730CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.14A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.1 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IXTP3N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBCC5F1A4EB820&compId=IXTA(P)3N50D2.pdf?ci_sign=1433b6210e8ee4e73eac19dda6d08b4459ecca40
IXTP3N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 24ns
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.86 EUR
20+3.63 EUR
21+3.43 EUR
50+3.3 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IXTP3N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBD9B42C73B820&compId=IXTA(P)3N100D2.pdf?ci_sign=c245ce0cffe79380fadde6d25a375768a49f0754
IXTP3N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.06 EUR
26+2.76 EUR
28+2.62 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
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