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IXFK170N20T IXFK170N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5344B49DB7820&compId=IXFK(X)170N20T.pdf?ci_sign=132d408b08d163a2c5614a95cdf3179fcf883841 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264
Mounting: THT
Case: TO264
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.15kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK170N20P IXFK170N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE7919FF3517E5D4746&compId=IXF_170N20P.pdf?ci_sign=7a8e99d2eb2f7ace504a59de513ff4d7089e5376 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264
Mounting: THT
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IXFH110N25T IXFH110N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC04B820&compId=IXFH110N25T.pdf?ci_sign=865e81011edebf9d86100c2413f31800becab293 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Case: TO247-3
Kind of package: tube
Drain-source voltage: 250V
Drain current: 110A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET
Power dissipation: 694W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 157nC
Kind of channel: enhancement
Mounting: THT
auf Bestellung 256 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.56 EUR
9+8.11 EUR
30+7.84 EUR
120+7.79 EUR
Mindestbestellmenge: 6
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IXTH110N25T IXTH110N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917DB820&compId=IXTH110N25T.pdf?ci_sign=70bf22a6c770d2e1a644817b2000fd043bc19e40 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Case: TO247-3
Kind of package: tube
Reverse recovery time: 170ns
Drain-source voltage: 250V
Drain current: 110A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET
Power dissipation: 694W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 157nC
Kind of channel: enhancement
Mounting: THT
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.65 EUR
9+8.08 EUR
10+7.64 EUR
Mindestbestellmenge: 7
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IXFH110N15T2 IXFH110N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC035820&compId=IXFH110N15T2.pdf?ci_sign=72224343f620ffa61176fabd9afc9a1c50cf9d78 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Reverse recovery time: 85ns
Drain-source voltage: 150V
Drain current: 110A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 150nC
Kind of channel: enhancement
Mounting: THT
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.15 EUR
10+7.32 EUR
11+6.84 EUR
30+6.68 EUR
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IXFA110N15T2 IXFA110N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A33DBB971E9820&compId=IXFA(P)110N15T2.pdf?ci_sign=1d332224bb7b48f25e03aad92d567e7b0f5abeb3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Case: TO263
Kind of package: tube
Reverse recovery time: 85ns
Drain-source voltage: 150V
Drain current: 110A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 150nC
Kind of channel: enhancement
Mounting: SMD
auf Bestellung 43 Stücke:
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9+8.04 EUR
15+4.90 EUR
16+4.63 EUR
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IXFH110N10P IXFH110N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC01F820&compId=IXFH110N10P.pdf?ci_sign=2692b409156b87ba36b15cc212f6c4d34cf32b38 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Case: TO247-3
Kind of package: tube
Drain-source voltage: 100V
Drain current: 110A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Gate charge: 110nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Mounting: THT
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.68 EUR
12+6.18 EUR
13+5.83 EUR
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CPC1726Y CPC1726Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931BC75C80C7&compId=CPC1726.pdf?ci_sign=a53eb8bf498480b7b73e068027bb14401528e7ca Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; OptoMOS; 0.75Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1A
Switched voltage: max. 250V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.75Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 2.5kV
Body dimensions: 21.08x10.16x3.3mm
Turn-off time: 2ms
Turn-on time: 5ms
Control current max.: 50mA
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.45 EUR
20+3.60 EUR
22+3.40 EUR
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IXBH24N170 IXBH24N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF2EB66970D820&compId=IXBH(t)24N170.pdf?ci_sign=2bee8c9822cc9e5187f0a7830b316f81bec56b83 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Turn-off time: 1285ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Technology: BiMOSFET™
Case: TO247-3
Mounting: THT
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 230A
Turn-on time: 190ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.50 EUR
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IXTP01N100D IXTP01N100D IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389C7B8E6A07820&compId=IXTP(Y)01N100D.pdf?ci_sign=15922f911bd95ebe5bb5b025278134f6086945cf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Kind of package: tube
Gate charge: 0.1µC
Kind of channel: depletion
Mounting: THT
Case: TO220AB
Reverse recovery time: 2ns
Drain-source voltage: 1kV
Drain current: 0.1A
On-state resistance: 80Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
auf Bestellung 83 Stücke:
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9+8.17 EUR
12+6.19 EUR
13+5.86 EUR
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CLA100E1200KB CLA100E1200KB IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3BE18465FA0D2&compId=CLA100E1200KB.pdf?ci_sign=8a6a9c1a38dc741ed9180f9f3b065cc6992c0b39 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: TO264
Max. off-state voltage: 1.2kV
Max. load current: 160A
Load current: 100A
Gate current: 80mA
Max. forward impulse current: 1.19kA
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.52 EUR
9+8.38 EUR
10+7.94 EUR
25+7.79 EUR
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IXFK230N20T IXFK230N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCF347BAAB5820&compId=IXFK(X)230N20T.pdf?ci_sign=e4a579f4f1660cfb2f2f8a74c12b8edd99086286 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Drain current: 230A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1670W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 358nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 200V
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
3+24.35 EUR
Mindestbestellmenge: 3
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IXFK180N25T IXFK180N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D54A180A387820&compId=IXFK(X)180N25T.pdf?ci_sign=df55105c078d9abc2821a1e455a37ba5cb1f4c8f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Drain current: 180A
On-state resistance: 12.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 1390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 364nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 250V
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.73 EUR
Mindestbestellmenge: 4
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IXFK88N30P IXFK88N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D392A66FA67820&compId=IXFH(K%2CT)88N30P.pdf?ci_sign=335b5cd3cfe63914107ecf98497f5a0e56bc651d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Drain current: 88A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Kind of package: tube
Gate charge: 180nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 300V
auf Bestellung 5 Stücke:
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5+14.30 EUR
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IXFK150N30P3 IXFK150N30P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D336DC7D7F5820&compId=IXFK(X)150N30P3.pdf?ci_sign=e1cc3cf21ad8db90ded334fd7d3c224869e18e9c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Drain current: 150A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 300V
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
4+20.35 EUR
100+19.56 EUR
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IXFK240N25X3 IXFK240N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCD7F081F39820&compId=IXFK(X)240N25X3.pdf?ci_sign=505f1373677b8d12c73e55874fb205a4c2db2269 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; TO264; 177ns
Drain current: 240A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 345nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Reverse recovery time: 177ns
Drain-source voltage: 250V
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
3+31.69 EUR
Mindestbestellmenge: 3
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IXFK80N50P IXFK80N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BB72E5378B7820&compId=IXFK(X)80N50P.pdf?ci_sign=d179f385e73cb0dab5632c8fec26d14e901d5f07 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264
Drain current: 80A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 500V
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
4+20.49 EUR
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IXFK100N65X2 IXFK100N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E5CCA0EF7820&compId=IXFK(X)100N65X2.pdf?ci_sign=943e818235cb436b72c8d4fa8bbbd2fba5457b4b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Drain current: 100A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 183nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 650V
auf Bestellung 4 Stücke:
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4+17.88 EUR
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IXFK32N80Q3 IXFK32N80Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC102BD600B820&compId=IXFK(X)32N80Q3.pdf?ci_sign=c47e75c209491b589467e1adbfe959bafdbee39b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Drain current: 32A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 1kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 800V
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
5+16.42 EUR
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IXTK180N15P IXTK180N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9188AFD9C59E27&compId=IXTK180N15P-DTE.pdf?ci_sign=2ad7003b8dcc314cadea14ef7581e19529865817 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Drain current: 180A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 800W
Polarisation: unipolar
Kind of package: tube
Gate charge: 240nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO264
Reverse recovery time: 150ns
Drain-source voltage: 150V
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)
4+19.91 EUR
5+14.73 EUR
6+13.93 EUR
10+13.51 EUR
25+13.38 EUR
Mindestbestellmenge: 4
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IXTP120P065T IXTP120P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Case: TO220AB
Reverse recovery time: 53ns
Drain-source voltage: -65V
Drain current: -120A
On-state resistance: 10mΩ
Type of transistor: P-MOSFET
Power dissipation: 298W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Mounting: THT
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.04 EUR
15+5.00 EUR
16+4.73 EUR
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IXTP120N075T2 IXTP120N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA3439A5B43820&compId=IXTA(P)120N075T2.pdf?ci_sign=a989206584ccedc296376c463764890b543910ce Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Case: TO220AB
Reverse recovery time: 50ns
Drain-source voltage: 75V
Drain current: 120A
On-state resistance: 7.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 78nC
Kind of channel: enhancement
Mounting: THT
Produkt ist nicht verfügbar
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IXTP120N04T2 IXTP120N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA2CF46A37D820&compId=IXTA(P)120N04T2.pdf?ci_sign=9781234723d86244a767988de041b1dde0e2fcc1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFN130N90SK IXFN130N90SK IXYS Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 900V
Drain current: 109A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 68nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFN90N170SK IXFN90N170SK IXYS media?resourcetype=datasheets&itemid=45fac7dc-a118-4a13-b201-c36d3f84bf39&filename=littelfuse%2520power%2520semiconductors%2520ixfn90n170sk%2520datasheet.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 67A; SOT227B; screw; SiC; 376nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 67A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 23mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 376nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFN27N120SK IXFN27N120SK IXYS Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 21.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 160nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCMA140PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B7921B0CE0C4&compId=MCMA140PD1600TB.pdf?ci_sign=c6eeb5142d57bdd4750d35a87b20279a22ab7570 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Type of semiconductor module: diode-thyristor
Max. off-state voltage: 1.6kV
Max. load current: 220A
Max. forward voltage: 1.28V
Load current: 140A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 2.4kA
auf Bestellung 30 Stücke:
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2+42.91 EUR
25+41.47 EUR
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IXTP140N12T2 IXTP140N12T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDE4D4C598B820&compId=IXTA(P)140N12T2.pdf?ci_sign=96847b55de5591e2d4cc16630b5a64962539e9ba Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Power dissipation: 577W
Polarisation: unipolar
Gate charge: 174nC
Kind of channel: enhancement
Reverse recovery time: 65ns
Drain-source voltage: 120V
Drain current: 140A
On-state resistance: 10mΩ
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IXFH80N25X3 IXFH80N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285CE2107E71820&compId=IXFH(P%2CQ)80N25X3.pdf?ci_sign=98dbb1b3debc6aa179f2279e7c8f3d9ef9df9898 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO247-3; 120ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 83nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Reverse recovery time: 120ns
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
auf Bestellung 16 Stücke:
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6+12.04 EUR
9+8.21 EUR
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IXFH130N15X3 IXFH130N15X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 80nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Reverse recovery time: 80ns
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 9mΩ
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1+71.50 EUR
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IXFP80N25X3 IXFP80N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285CE2107E71820&compId=IXFH(P%2CQ)80N25X3.pdf?ci_sign=98dbb1b3debc6aa179f2279e7c8f3d9ef9df9898 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO220AB; 120ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 83nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 120ns
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
auf Bestellung 28 Stücke:
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7+11.00 EUR
10+7.18 EUR
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IXFQ80N25X3 IXFQ80N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B0FB5329FB75A0C4&compId=IXFQ80N25X3.PDF?ci_sign=7536c7641f30ddaddfa252b951646f165975fbd7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO3P
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
auf Bestellung 8 Stücke:
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IXFA80N25X3 IXFA80N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285C1284DCA7820&compId=IXFA80N25X3.pdf?ci_sign=d69856da52cdce40fb1d6a8962dc82941b4efd06 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO263; 120ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 83nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
Reverse recovery time: 120ns
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
auf Bestellung 38 Stücke:
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8+9.78 EUR
10+7.36 EUR
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IXFH72N30X3 IXFH72N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBC8AC02F1D8BF&compId=IXF_72N30X3.pdf?ci_sign=09f98a1c935417cb47752418f14c2caee473339d pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
auf Bestellung 15 Stücke:
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6+12.87 EUR
8+9.28 EUR
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IXFQ72N30X3 IXFQ72N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBC8AC02F1D8BF&compId=IXF_72N30X3.pdf?ci_sign=09f98a1c935417cb47752418f14c2caee473339d pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO3P
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
auf Bestellung 298 Stücke:
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6+13.27 EUR
8+8.99 EUR
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IXFP130N15X3 IXFP130N15X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 80nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 80ns
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 9mΩ
Produkt ist nicht verfügbar
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IXFP72N30X3 IXFP72N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBC8AC02F1D8BF&compId=IXF_72N30X3.pdf?ci_sign=09f98a1c935417cb47752418f14c2caee473339d Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
Produkt ist nicht verfügbar
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IXFA130N15X3 IXFA130N15X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 80nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Reverse recovery time: 80ns
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 9mΩ
Produkt ist nicht verfügbar
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VBO40-12NO6 VBO40-12NO6 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FECC47C9D160C4&compId=VBO40-12NO6.pdf?ci_sign=1ae93a7364f9aa25c6cf570c044bd4480bbd5514 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 40A; Ifsm: 320A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.32kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M4 screws
Case: SOT227B
auf Bestellung 134 Stücke:
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3+29.87 EUR
20+28.73 EUR
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LDA213 LDA213 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AD204370281EC&compId=LDA213.pdf?ci_sign=6bf1f535cde47fa270dceaf89ce0b7c1d34729da Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Mounting: THT
Case: DIP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
auf Bestellung 125 Stücke:
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LDA213S LDA213S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AD204370281EC&compId=LDA213.pdf?ci_sign=6bf1f535cde47fa270dceaf89ce0b7c1d34729da Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
auf Bestellung 195 Stücke:
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36+1.99 EUR
45+1.62 EUR
72+1.00 EUR
76+0.94 EUR
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LDA210 LDA210 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC5A7355F41EC&compId=LDA210S.pdf?ci_sign=5a79258bba6a8a2cd9ee16e60c4dcb8de005b71a Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Mounting: THT
Case: DIP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA212S LDA212S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACFA49FC501EC&compId=LDA212.pdf?ci_sign=e72cb57335934dbfa047478f021fb2d5b300c2bc Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA211S LDA211S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACCBFBB7BC1EC&compId=LDA211.pdf?ci_sign=4f0c7c321b42f0332d55e82cc5d135a99455a363 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA210S LDA210S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC5A7355F41EC&compId=LDA210S.pdf?ci_sign=5a79258bba6a8a2cd9ee16e60c4dcb8de005b71a Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; 3.75kV; SOP8
Mounting: SMD
Case: SOP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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FDA217STR FDA217STR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Mounting: SMD
Operating temperature: -40...85°C
Case: SO8
Type of integrated circuit: driver
Number of channels: 2
Kind of package: reel; tape
Kind of integrated circuit: MOSFET gate driver
Produkt ist nicht verfügbar
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LDA210STR LDA210STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC5A7355F41EC&compId=LDA210S.pdf?ci_sign=5a79258bba6a8a2cd9ee16e60c4dcb8de005b71a Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA211STR LDA211STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACCBFBB7BC1EC&compId=LDA211.pdf?ci_sign=4f0c7c321b42f0332d55e82cc5d135a99455a363 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA212 LDA212 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACFA49FC501EC&compId=LDA212.pdf?ci_sign=e72cb57335934dbfa047478f021fb2d5b300c2bc Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Mounting: THT
Case: DIP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA212STR LDA212STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACFA49FC501EC&compId=LDA212.pdf?ci_sign=e72cb57335934dbfa047478f021fb2d5b300c2bc Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA213STR LDA213STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AD204370281EC&compId=LDA213.pdf?ci_sign=6bf1f535cde47fa270dceaf89ce0b7c1d34729da Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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IXTP10P50P IXTP10P50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 414ns
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.55 EUR
14+5.32 EUR
15+5.02 EUR
100+4.83 EUR
Mindestbestellmenge: 9
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IXTP10P15T IXTP10P15T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03840D407D8BF&compId=IXT_10P15T.pdf?ci_sign=aab868e73793fd93dd8185240cab19c3a6c680af Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
auf Bestellung 24 Stücke:
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24+2.97 EUR
Mindestbestellmenge: 24
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IXTP102N15T IXTP102N15T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12E1820&compId=IXTA(H%2CP%2CQ)102N15T.pdf?ci_sign=a7dd4f01d2a4226a8b0a38e27af5b16600fca392 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 97ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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MDMA450UB1600PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDMA360UB1600PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDMA210UB1600PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDMA280UB1600PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXTA120N04T2 IXTA120N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA2CF46A37D820&compId=IXTA(P)120N04T2.pdf?ci_sign=9781234723d86244a767988de041b1dde0e2fcc1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTH420N04T2 IXTH420N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494E9820&compId=IXTH420N04T2.pdf?ci_sign=9304d2c9a0f1384c4669abc672571b3f8ebff765 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFK170N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5344B49DB7820&compId=IXFK(X)170N20T.pdf?ci_sign=132d408b08d163a2c5614a95cdf3179fcf883841
IXFK170N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264
Mounting: THT
Case: TO264
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.15kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK170N20P pVersion=0046&contRep=ZT&docId=005056AB752F1EE7919FF3517E5D4746&compId=IXF_170N20P.pdf?ci_sign=7a8e99d2eb2f7ace504a59de513ff4d7089e5376
IXFK170N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264
Mounting: THT
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IXFH110N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC04B820&compId=IXFH110N25T.pdf?ci_sign=865e81011edebf9d86100c2413f31800becab293
IXFH110N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Case: TO247-3
Kind of package: tube
Drain-source voltage: 250V
Drain current: 110A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET
Power dissipation: 694W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 157nC
Kind of channel: enhancement
Mounting: THT
auf Bestellung 256 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.56 EUR
9+8.11 EUR
30+7.84 EUR
120+7.79 EUR
Mindestbestellmenge: 6
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IXTH110N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917DB820&compId=IXTH110N25T.pdf?ci_sign=70bf22a6c770d2e1a644817b2000fd043bc19e40
IXTH110N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Case: TO247-3
Kind of package: tube
Reverse recovery time: 170ns
Drain-source voltage: 250V
Drain current: 110A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET
Power dissipation: 694W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 157nC
Kind of channel: enhancement
Mounting: THT
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.65 EUR
9+8.08 EUR
10+7.64 EUR
Mindestbestellmenge: 7
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IXFH110N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC035820&compId=IXFH110N15T2.pdf?ci_sign=72224343f620ffa61176fabd9afc9a1c50cf9d78
IXFH110N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Reverse recovery time: 85ns
Drain-source voltage: 150V
Drain current: 110A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 150nC
Kind of channel: enhancement
Mounting: THT
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.15 EUR
10+7.32 EUR
11+6.84 EUR
30+6.68 EUR
Mindestbestellmenge: 9
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IXFA110N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A33DBB971E9820&compId=IXFA(P)110N15T2.pdf?ci_sign=1d332224bb7b48f25e03aad92d567e7b0f5abeb3
IXFA110N15T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Case: TO263
Kind of package: tube
Reverse recovery time: 85ns
Drain-source voltage: 150V
Drain current: 110A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 150nC
Kind of channel: enhancement
Mounting: SMD
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.04 EUR
15+4.90 EUR
16+4.63 EUR
Mindestbestellmenge: 9
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IXFH110N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC01F820&compId=IXFH110N10P.pdf?ci_sign=2692b409156b87ba36b15cc212f6c4d34cf32b38
IXFH110N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Case: TO247-3
Kind of package: tube
Drain-source voltage: 100V
Drain current: 110A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Gate charge: 110nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Mounting: THT
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.68 EUR
12+6.18 EUR
13+5.83 EUR
Mindestbestellmenge: 9
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CPC1726Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931BC75C80C7&compId=CPC1726.pdf?ci_sign=a53eb8bf498480b7b73e068027bb14401528e7ca
CPC1726Y
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; OptoMOS; 0.75Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1A
Switched voltage: max. 250V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.75Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 2.5kV
Body dimensions: 21.08x10.16x3.3mm
Turn-off time: 2ms
Turn-on time: 5ms
Control current max.: 50mA
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.45 EUR
20+3.60 EUR
22+3.40 EUR
Mindestbestellmenge: 14
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IXBH24N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF2EB66970D820&compId=IXBH(t)24N170.pdf?ci_sign=2bee8c9822cc9e5187f0a7830b316f81bec56b83
IXBH24N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Turn-off time: 1285ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Technology: BiMOSFET™
Case: TO247-3
Mounting: THT
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 230A
Turn-on time: 190ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
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IXTP01N100D pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389C7B8E6A07820&compId=IXTP(Y)01N100D.pdf?ci_sign=15922f911bd95ebe5bb5b025278134f6086945cf
IXTP01N100D
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Kind of package: tube
Gate charge: 0.1µC
Kind of channel: depletion
Mounting: THT
Case: TO220AB
Reverse recovery time: 2ns
Drain-source voltage: 1kV
Drain current: 0.1A
On-state resistance: 80Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.17 EUR
12+6.19 EUR
13+5.86 EUR
Mindestbestellmenge: 9
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CLA100E1200KB pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3BE18465FA0D2&compId=CLA100E1200KB.pdf?ci_sign=8a6a9c1a38dc741ed9180f9f3b065cc6992c0b39
CLA100E1200KB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: TO264
Max. off-state voltage: 1.2kV
Max. load current: 160A
Load current: 100A
Gate current: 80mA
Max. forward impulse current: 1.19kA
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.52 EUR
9+8.38 EUR
10+7.94 EUR
25+7.79 EUR
Mindestbestellmenge: 7
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IXFK230N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCF347BAAB5820&compId=IXFK(X)230N20T.pdf?ci_sign=e4a579f4f1660cfb2f2f8a74c12b8edd99086286
IXFK230N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Drain current: 230A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1670W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 358nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 200V
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.35 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFK180N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D54A180A387820&compId=IXFK(X)180N25T.pdf?ci_sign=df55105c078d9abc2821a1e455a37ba5cb1f4c8f
IXFK180N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Drain current: 180A
On-state resistance: 12.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 1390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 364nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 250V
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.73 EUR
Mindestbestellmenge: 4
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IXFK88N30P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D392A66FA67820&compId=IXFH(K%2CT)88N30P.pdf?ci_sign=335b5cd3cfe63914107ecf98497f5a0e56bc651d
IXFK88N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Drain current: 88A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Kind of package: tube
Gate charge: 180nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 300V
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.30 EUR
Mindestbestellmenge: 5
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IXFK150N30P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D336DC7D7F5820&compId=IXFK(X)150N30P3.pdf?ci_sign=e1cc3cf21ad8db90ded334fd7d3c224869e18e9c
IXFK150N30P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Drain current: 150A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 300V
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.35 EUR
100+19.56 EUR
Mindestbestellmenge: 4
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IXFK240N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCD7F081F39820&compId=IXFK(X)240N25X3.pdf?ci_sign=505f1373677b8d12c73e55874fb205a4c2db2269
IXFK240N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; TO264; 177ns
Drain current: 240A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 345nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Reverse recovery time: 177ns
Drain-source voltage: 250V
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+31.69 EUR
Mindestbestellmenge: 3
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IXFK80N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BB72E5378B7820&compId=IXFK(X)80N50P.pdf?ci_sign=d179f385e73cb0dab5632c8fec26d14e901d5f07
IXFK80N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264
Drain current: 80A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 500V
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.49 EUR
Mindestbestellmenge: 4
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IXFK100N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E5CCA0EF7820&compId=IXFK(X)100N65X2.pdf?ci_sign=943e818235cb436b72c8d4fa8bbbd2fba5457b4b
IXFK100N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Drain current: 100A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 183nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 650V
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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IXFK32N80Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC102BD600B820&compId=IXFK(X)32N80Q3.pdf?ci_sign=c47e75c209491b589467e1adbfe959bafdbee39b
IXFK32N80Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Drain current: 32A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 1kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 800V
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.42 EUR
Mindestbestellmenge: 5
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IXTK180N15P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9188AFD9C59E27&compId=IXTK180N15P-DTE.pdf?ci_sign=2ad7003b8dcc314cadea14ef7581e19529865817
IXTK180N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Drain current: 180A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 800W
Polarisation: unipolar
Kind of package: tube
Gate charge: 240nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO264
Reverse recovery time: 150ns
Drain-source voltage: 150V
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.91 EUR
5+14.73 EUR
6+13.93 EUR
10+13.51 EUR
25+13.38 EUR
Mindestbestellmenge: 4
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IXTP120P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7
IXTP120P065T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Case: TO220AB
Reverse recovery time: 53ns
Drain-source voltage: -65V
Drain current: -120A
On-state resistance: 10mΩ
Type of transistor: P-MOSFET
Power dissipation: 298W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Mounting: THT
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.04 EUR
15+5.00 EUR
16+4.73 EUR
Mindestbestellmenge: 11
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IXTP120N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA3439A5B43820&compId=IXTA(P)120N075T2.pdf?ci_sign=a989206584ccedc296376c463764890b543910ce
IXTP120N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Case: TO220AB
Reverse recovery time: 50ns
Drain-source voltage: 75V
Drain current: 120A
On-state resistance: 7.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 78nC
Kind of channel: enhancement
Mounting: THT
Produkt ist nicht verfügbar
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IXTP120N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA2CF46A37D820&compId=IXTA(P)120N04T2.pdf?ci_sign=9781234723d86244a767988de041b1dde0e2fcc1
IXTP120N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFN130N90SK
IXFN130N90SK
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 900V
Drain current: 109A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 68nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFN90N170SK media?resourcetype=datasheets&itemid=45fac7dc-a118-4a13-b201-c36d3f84bf39&filename=littelfuse%2520power%2520semiconductors%2520ixfn90n170sk%2520datasheet.pdf
IXFN90N170SK
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 67A; SOT227B; screw; SiC; 376nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 67A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 23mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 376nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFN27N120SK
IXFN27N120SK
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 21.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 160nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCMA140PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B7921B0CE0C4&compId=MCMA140PD1600TB.pdf?ci_sign=c6eeb5142d57bdd4750d35a87b20279a22ab7570 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Type of semiconductor module: diode-thyristor
Max. off-state voltage: 1.6kV
Max. load current: 220A
Max. forward voltage: 1.28V
Load current: 140A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 2.4kA
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.91 EUR
25+41.47 EUR
Mindestbestellmenge: 2
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IXTP140N12T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDE4D4C598B820&compId=IXTA(P)140N12T2.pdf?ci_sign=96847b55de5591e2d4cc16630b5a64962539e9ba
IXTP140N12T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Power dissipation: 577W
Polarisation: unipolar
Gate charge: 174nC
Kind of channel: enhancement
Reverse recovery time: 65ns
Drain-source voltage: 120V
Drain current: 140A
On-state resistance: 10mΩ
Produkt ist nicht verfügbar
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IXFH80N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285CE2107E71820&compId=IXFH(P%2CQ)80N25X3.pdf?ci_sign=98dbb1b3debc6aa179f2279e7c8f3d9ef9df9898
IXFH80N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO247-3; 120ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 83nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Reverse recovery time: 120ns
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.04 EUR
9+8.21 EUR
Mindestbestellmenge: 6
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IXFH130N15X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569
IXFH130N15X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 80nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Reverse recovery time: 80ns
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 9mΩ
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
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IXFP80N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285CE2107E71820&compId=IXFH(P%2CQ)80N25X3.pdf?ci_sign=98dbb1b3debc6aa179f2279e7c8f3d9ef9df9898
IXFP80N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO220AB; 120ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 83nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 120ns
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.00 EUR
10+7.18 EUR
Mindestbestellmenge: 7
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IXFQ80N25X3 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B0FB5329FB75A0C4&compId=IXFQ80N25X3.PDF?ci_sign=7536c7641f30ddaddfa252b951646f165975fbd7
IXFQ80N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO3P
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
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IXFA80N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285C1284DCA7820&compId=IXFA80N25X3.pdf?ci_sign=d69856da52cdce40fb1d6a8962dc82941b4efd06
IXFA80N25X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO263; 120ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 83nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
Reverse recovery time: 120ns
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.78 EUR
10+7.36 EUR
Mindestbestellmenge: 8
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IXFH72N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBC8AC02F1D8BF&compId=IXF_72N30X3.pdf?ci_sign=09f98a1c935417cb47752418f14c2caee473339d pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFH72N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.87 EUR
8+9.28 EUR
Mindestbestellmenge: 6
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IXFQ72N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBC8AC02F1D8BF&compId=IXF_72N30X3.pdf?ci_sign=09f98a1c935417cb47752418f14c2caee473339d pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFQ72N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO3P
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.27 EUR
8+8.99 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFP130N15X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569
IXFP130N15X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 80nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 80ns
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 9mΩ
Produkt ist nicht verfügbar
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IXFP72N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBC8AC02F1D8BF&compId=IXF_72N30X3.pdf?ci_sign=09f98a1c935417cb47752418f14c2caee473339d
IXFP72N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
Produkt ist nicht verfügbar
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IXFA130N15X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569
IXFA130N15X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 80nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Reverse recovery time: 80ns
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 9mΩ
Produkt ist nicht verfügbar
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VBO40-12NO6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FECC47C9D160C4&compId=VBO40-12NO6.pdf?ci_sign=1ae93a7364f9aa25c6cf570c044bd4480bbd5514
VBO40-12NO6
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 40A; Ifsm: 320A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.32kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M4 screws
Case: SOT227B
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.87 EUR
20+28.73 EUR
Mindestbestellmenge: 3
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LDA213 pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AD204370281EC&compId=LDA213.pdf?ci_sign=6bf1f535cde47fa270dceaf89ce0b7c1d34729da
LDA213
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Mounting: THT
Case: DIP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
Mindestbestellmenge: 125
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LDA213S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AD204370281EC&compId=LDA213.pdf?ci_sign=6bf1f535cde47fa270dceaf89ce0b7c1d34729da
LDA213S
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
45+1.62 EUR
72+1.00 EUR
76+0.94 EUR
Mindestbestellmenge: 36
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LDA210 pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC5A7355F41EC&compId=LDA210S.pdf?ci_sign=5a79258bba6a8a2cd9ee16e60c4dcb8de005b71a
LDA210
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Mounting: THT
Case: DIP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA212S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACFA49FC501EC&compId=LDA212.pdf?ci_sign=e72cb57335934dbfa047478f021fb2d5b300c2bc
LDA212S
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA211S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACCBFBB7BC1EC&compId=LDA211.pdf?ci_sign=4f0c7c321b42f0332d55e82cc5d135a99455a363
LDA211S
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA210S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC5A7355F41EC&compId=LDA210S.pdf?ci_sign=5a79258bba6a8a2cd9ee16e60c4dcb8de005b71a
LDA210S
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; 3.75kV; SOP8
Mounting: SMD
Case: SOP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDA217STR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b
FDA217STR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Mounting: SMD
Operating temperature: -40...85°C
Case: SO8
Type of integrated circuit: driver
Number of channels: 2
Kind of package: reel; tape
Kind of integrated circuit: MOSFET gate driver
Produkt ist nicht verfügbar
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LDA210STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC5A7355F41EC&compId=LDA210S.pdf?ci_sign=5a79258bba6a8a2cd9ee16e60c4dcb8de005b71a
LDA210STR
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA211STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACCBFBB7BC1EC&compId=LDA211.pdf?ci_sign=4f0c7c321b42f0332d55e82cc5d135a99455a363
LDA211STR
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA212 pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACFA49FC501EC&compId=LDA212.pdf?ci_sign=e72cb57335934dbfa047478f021fb2d5b300c2bc
LDA212
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Mounting: THT
Case: DIP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA212STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ACFA49FC501EC&compId=LDA212.pdf?ci_sign=e72cb57335934dbfa047478f021fb2d5b300c2bc
LDA212STR
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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LDA213STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AD204370281EC&compId=LDA213.pdf?ci_sign=6bf1f535cde47fa270dceaf89ce0b7c1d34729da
LDA213STR
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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IXTP10P50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e
IXTP10P50P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 414ns
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.55 EUR
14+5.32 EUR
15+5.02 EUR
100+4.83 EUR
Mindestbestellmenge: 9
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IXTP10P15T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03840D407D8BF&compId=IXT_10P15T.pdf?ci_sign=aab868e73793fd93dd8185240cab19c3a6c680af
IXTP10P15T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.97 EUR
Mindestbestellmenge: 24
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IXTP102N15T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12E1820&compId=IXTA(H%2CP%2CQ)102N15T.pdf?ci_sign=a7dd4f01d2a4226a8b0a38e27af5b16600fca392
IXTP102N15T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 97ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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MDMA450UB1600PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDMA360UB1600PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDMA210UB1600PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDMA280UB1600PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXTA120N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA2CF46A37D820&compId=IXTA(P)120N04T2.pdf?ci_sign=9781234723d86244a767988de041b1dde0e2fcc1
IXTA120N04T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTH420N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494E9820&compId=IXTH420N04T2.pdf?ci_sign=9304d2c9a0f1384c4669abc672571b3f8ebff765
IXTH420N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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