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Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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IXTA1N100P IXTA1N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDE7EBEDD57820&compId=IXTA(P%2CY)1N100P.pdf?ci_sign=2c0b34b7a016c9a1f63c9199566154da599472cc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO263; 750ns
Mounting: SMD
Case: TO263
Polarisation: unipolar
Reverse recovery time: 750ns
Drain current: 1A
On-state resistance: 15Ω
Kind of channel: enhancement
Power dissipation: 50W
Features of semiconductor devices: standard power mosfet
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Produkt ist nicht verfügbar
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IXTP1N100P IXTP1N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDE7EBEDD57820&compId=IXTA(P%2CY)1N100P.pdf?ci_sign=2c0b34b7a016c9a1f63c9199566154da599472cc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO220AB; 750ns
Mounting: THT
Case: TO220AB
Polarisation: unipolar
Reverse recovery time: 750ns
Drain current: 1A
On-state resistance: 15Ω
Kind of channel: enhancement
Power dissipation: 50W
Features of semiconductor devices: standard power mosfet
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Produkt ist nicht verfügbar
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IXBOD2-13 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF3591A938A58BF&compId=IXBOD2.pdf?ci_sign=fa4582bc3af32ec6981a4c739433a1bd5214673d Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.3kV
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 1.3kV
Produkt ist nicht verfügbar
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IXTA1N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDE7EBEDD57820&compId=IXTA(P%2CY)1N100P.pdf?ci_sign=2c0b34b7a016c9a1f63c9199566154da599472cc
IXTA1N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO263; 750ns
Mounting: SMD
Case: TO263
Polarisation: unipolar
Reverse recovery time: 750ns
Drain current: 1A
On-state resistance: 15Ω
Kind of channel: enhancement
Power dissipation: 50W
Features of semiconductor devices: standard power mosfet
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP1N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDE7EBEDD57820&compId=IXTA(P%2CY)1N100P.pdf?ci_sign=2c0b34b7a016c9a1f63c9199566154da599472cc
IXTP1N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO220AB; 750ns
Mounting: THT
Case: TO220AB
Polarisation: unipolar
Reverse recovery time: 750ns
Drain current: 1A
On-state resistance: 15Ω
Kind of channel: enhancement
Power dissipation: 50W
Features of semiconductor devices: standard power mosfet
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXBOD2-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF3591A938A58BF&compId=IXBOD2.pdf?ci_sign=fa4582bc3af32ec6981a4c739433a1bd5214673d
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.3kV
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 1.3kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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