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IXTP80N10T IXTP80N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D406B88E9F9820&compId=IXTA(P)80N10T.pdf?ci_sign=bc8f5f5b020fd346b1d379e0314e69667636f1ab Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.92 EUR
27+2.67 EUR
29+2.53 EUR
Mindestbestellmenge: 19
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IXTA80N10T IXTA80N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D406B88E9F9820&compId=IXTA(P)80N10T.pdf?ci_sign=bc8f5f5b020fd346b1d379e0314e69667636f1ab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
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IXTA180N10T IXTA180N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D545772189D820&compId=IXTA(P)180N10T.pdf?ci_sign=95831666b0a60635c5fe5a67c516de81d010b765 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
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IXTP180N10T IXTP180N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D545772189D820&compId=IXTA(P)180N10T.pdf?ci_sign=95831666b0a60635c5fe5a67c516de81d010b765 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
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CPC1972GS CPC1972GS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AF084E0C7&compId=CPC1972.pdf?ci_sign=ad681fe35f2cbf4725519c25a38bae72b51c2f77 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
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CPC1972GSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AF084E0C7&compId=CPC1972.pdf?ci_sign=ad681fe35f2cbf4725519c25a38bae72b51c2f77 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
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FUO22-12N FUO22-12N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE987F55DC0A59378BF&compId=FUO22-12N.pdf?ci_sign=ff71e9cc4948b645864c0457bca1ed4e0808aba6 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 150A
Case: ISOPLUS i4-pac™ x024a
Electrical mounting: THT
Type of bridge rectifier: three-phase
Max. forward voltage: 1.2V
Load current: 30A
Max. forward impulse current: 150A
Max. off-state voltage: 1.2kV
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.63 EUR
5+17.62 EUR
10+16.93 EUR
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IXFN132N50P3 IXFN132N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF964F62AE6B820&compId=IXFN132N50P3.pdf?ci_sign=3d53e2e7d5a8766b34ef8c5d8db2b89f63097539 Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 112A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 39mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Gate charge: 250nC
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Pulsed drain current: 330A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
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IXFB132N50P3 IXFB132N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4611EE4E6AA18&compId=IXFB132N50P3.pdf?ci_sign=5f657928f29000d858e2b0c3da93947744b88203 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Power dissipation: 1890W
Technology: HiPerFET™; Polar3™
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IXFL132N50P3 IXFL132N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94FFC40FB820&compId=IXFL132N50P3.pdf?ci_sign=85792c6dcf977ebf78032c427263cc5303138c45 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Power dissipation: 520W
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DSEI2X61-06C DSEI2X61-06C IXYS pVersion=0046&contRep=ZT&docId=E291FD18AE0956F19A99005056AB752F&compId=96508.pdf?ci_sign=fe3ba4231a432602470235eb4879bc415d83b33a Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.8V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
3+29.96 EUR
5+28.8 EUR
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CPC1984Y CPC1984Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493853439C0C7&compId=CPC1984Y.pdf?ci_sign=c4456eb49faad16e3d4dbbc32458cf0e8e594af7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.66Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 4kV
Turn-on time: 10ms
Turn-off time: 2ms
Kind of output: MOSFET
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MCC44-16io1B MCC44-16io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D60D0D8B85E27&compId=MCC44-16IO1B-DTE.pdf?ci_sign=ea286ae49b04ba3e975ed8e5bf2e0596849d9d2c pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Electrical mounting: screw
Kind of package: bulk
Semiconductor structure: double series
Mechanical mounting: screw
Case: TO240AA
Type of semiconductor module: thyristor
Gate current: 100/200mA
Max. forward voltage: 1.34V
Load current: 49A
Max. forward impulse current: 1.15kA
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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IXTQ69N30P IXTQ69N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D131A4635E27&compId=IXTQ69N30P-DTE.pdf?ci_sign=30ac47e4c9ca5a13d0405042e859205ebf2f7209 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO3P; 330ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: Polar™
Kind of package: tube
Case: TO3P
Polarisation: unipolar
Gate charge: 156nC
Reverse recovery time: 330ns
On-state resistance: 49mΩ
Gate-source voltage: ±20V
Drain current: 69A
Drain-source voltage: 300V
Power dissipation: 500W
Produkt ist nicht verfügbar
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IXFH320N10T2 IXFH320N10T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2856F4A8DDE7820&compId=IXFH(T)320N10T2.pdf?ci_sign=712ea63a2238f63f81d01689168cb986a264e110 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Case: TO247-3
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Reverse recovery time: 98ns
Gate charge: 430nC
On-state resistance: 3.5mΩ
Power dissipation: 1kW
Drain-source voltage: 100V
Drain current: 320A
Kind of channel: enhancement
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VUO190-08NO7 VUO190-08NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE2BABEF7649AE53672&compId=VUO190-08NO7.pdf?ci_sign=7d5953cf66e9d79c0c489443ea692fb8e2598469 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 240A; Ifsm: 2.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 240A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.07V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
auf Bestellung 19 Stücke:
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1+83.94 EUR
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MD18200S-DKM2MM IXYS littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf?assetguid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8 Category: Diode modules
Description: Module: diode; double,common cathode; 1.8kV; If: 200A; package S
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.5V
Load current: 200A
Max. load current: 310A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 6.5kA
Case: package S
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
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PAA191 PAA191 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A860C7&compId=PAA191.pdf?ci_sign=2ffa2a1db02679800af199023510c8a9cfbbbdad Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Mounting: THT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.71 EUR
10+7.24 EUR
11+6.84 EUR
Mindestbestellmenge: 6
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PAA191S PAA191S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A860C7&compId=PAA191.pdf?ci_sign=2ffa2a1db02679800af199023510c8a9cfbbbdad Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Mounting: SMT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
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PAA191STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A860C7&compId=PAA191.pdf?ci_sign=2ffa2a1db02679800af199023510c8a9cfbbbdad Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Mounting: SMT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
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PLA191 PLA191 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Manufacturer series: OptoMOS
Case: DIP6
Kind of output: MOSFET
Contacts configuration: SPST-NO
Mounting: THT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
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PLA191STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Manufacturer series: OptoMOS
Case: DIP6
Kind of output: MOSFET
Contacts configuration: SPST-NO
Mounting: SMT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
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IXFK300N20X3 IXFK300N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB1B71634818BF&compId=IXF_300N20X3.pdf?ci_sign=d7ceaf98ba04f28d6cca73c11a6a109100fa462b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; TO264
Kind of package: tube
Case: TO264
Kind of channel: enhancement
Mounting: THT
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 170ns
Gate charge: 375nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
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MCC200-16io1 IXYS pVersion=0046&contRep=ZT&docId=E29208AD5CE395F19A99005056AB752F&compId=L627.pdf?ci_sign=45ae8fd0beea3436de91781e35bd8c3b2e0c91a8 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXTT170N10P IXTT170N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9185A4CE98DE27&compId=IXTK170N10P-DTE.pdf?ci_sign=9136904f8419278af3f28381c2ff94e364518191 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 198nC
Kind of channel: enhancement
Reverse recovery time: 120ns
Kind of package: tube
auf Bestellung 215 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.57 EUR
7+10.44 EUR
30+10.04 EUR
Mindestbestellmenge: 5
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IXTK170N10P IXTK170N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9185A4CE98DE27&compId=IXTK170N10P-DTE.pdf?ci_sign=9136904f8419278af3f28381c2ff94e364518191 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of channel: enhancement
Reverse recovery time: 120ns
Kind of package: tube
auf Bestellung 312 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.26 EUR
7+10.4 EUR
25+10.28 EUR
100+9.98 EUR
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IXTQ52N30P IXTQ52N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90C271079FBE27&compId=IXTQ52N30P-DTE.pdf?ci_sign=cf659494e94781585499e1614568475c46cc3563 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO3P; 250ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 52A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Kind of package: tube
auf Bestellung 199 Stücke:
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IXTY3N50P IXTY3N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Kind of package: tube
auf Bestellung 104 Stücke:
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IXTA3N50P IXTA3N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Kind of package: tube
auf Bestellung 10 Stücke:
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IXFB44N100P IXFB44N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED47B1C40012A18&compId=IXFB44N100P.pdf?ci_sign=fe6581ef286df05fe0b0acd958d2ed414c5337a2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Kind of package: tube
auf Bestellung 55 Stücke:
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IXFK140N30P IXFK140N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5FBBF2FB0F8BF&compId=IXFK140N30P_IXFX140N30P.pdf?ci_sign=6d081054787efa2c56b843d54a6d6c3f464460d2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 140A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Kind of package: tube
auf Bestellung 280 Stücke:
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IXFB60N80P IXFB60N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B28FB248CCFA4A15&compId=IXFB60N80P.pdf?ci_sign=74ac471adf1c30241a4f29653fe0f24dc4a054f0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Kind of package: tube
auf Bestellung 7 Stücke:
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IXFR18N90P IXFR18N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B09820&compId=IXFR18N90P.pdf?ci_sign=630c9b0ce412688e2b82a725d5ca14f372c1c7c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 10.5A; Idm: 36A; 200W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 10.5A
Pulsed drain current: 36A
Power dissipation: 200W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 97nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Kind of package: tube
auf Bestellung 13 Stücke:
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IXFH120N15P IXFH120N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 217 Stücke:
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IXFH52N30P IXFH52N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5E98F50BC18BF&compId=IXF(V%2CH)52N30P(S).pdf?ci_sign=364d4b58b7cffdd5dffcd14a44a5a11a01598e3a Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 110nC
Reverse recovery time: 160ns
On-state resistance: 73mΩ
Gate-source voltage: ±20V
Drain current: 52A
Drain-source voltage: 300V
Power dissipation: 400W
auf Bestellung 282 Stücke:
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IXFB300N10P IXFB300N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED46E259E172A18&compId=IXFB300N10P.pdf?ci_sign=9dc76b5f08d73e0cf6cbcdad5881837d048e6e99 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 1.5kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 279nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Kind of package: tube
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MMIX1F40N110P MMIX1F40N110P IXYS DS100431(MMIX1F40N110P).pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 20 Stücke:
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CPC1906Y CPC1906Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F1900C7&compId=CPC1906.pdf?ci_sign=ecc876797bb2c9d84a9e02b4914db18b397562b5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 10ms
Turn-off time: 5ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXTP44N10T IXTP44N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO220AB
On-state resistance: 30mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 60ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 161 Stücke:
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MDNA360UB2200PTED IXYS MDNA360UB2200PTED.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 135A
Pulsed collector current: 280A
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MDNA210UB2200PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
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MDNA280UB2200PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
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MCNA120UI2200TED IXYS MCNA120UI2200TED.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; 190W
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 150A
Power dissipation: 190W
Max. off-state voltage: 1.7kV
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Semiconductor structure: diode/transistor
Case: E2-Pack
Application: Inverter
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Produkt ist nicht verfügbar
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LOC110 LOC110 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6 Category: Optocouplers - others
Description: Optocoupler; THT; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: photodiode
Case: DIP8
Insulation voltage: 3.75kV
auf Bestellung 414 Stücke:
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18+3.99 EUR
35+2.07 EUR
37+1.96 EUR
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IXTU4N70X2 IXTU4N70X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_4n70x2_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 68 Stücke:
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IXTA4N70X2 IXTA4N70X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_4n70x2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 38 Stücke:
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PLB150S PLB150S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7960C7&compId=PLB150.pdf?ci_sign=e6a835b33cf7bbb6db157533fe16deb901f9ab13 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Kind of output: MOSFET
On-state resistance: 7Ω
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-off time: 2.5ms
Turn-on time: 1ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 32 Stücke:
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9+8.67 EUR
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IXFR24N100Q3 IXFR24N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B8D820&compId=IXFR24N100Q3.pdf?ci_sign=ca4e72774d87e585c7a699e877221fe57b34009d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
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3+30.03 EUR
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IXFK24N100Q3 IXFK24N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCD172354D3820&compId=IXFK(X)24N100Q3.pdf?ci_sign=d4b7827559308d1b5d73efbdd785ff703ce77315 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 1kW
Case: TO264
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFN24N100 IXFN24N100 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A89ECE2C62351E27&compId=IXFN24N100-DTE.pdf?ci_sign=25e1c0067815d2041ecf400ffd60ad891352f678 description Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: SOT227B
On-state resistance: 390mΩ
Gate charge: 250nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Gate-source voltage: ±30V
Technology: HiPerFET™
Pulsed drain current: 96A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFX24N100Q3 IXFX24N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCD172354D3820&compId=IXFK(X)24N100Q3.pdf?ci_sign=d4b7827559308d1b5d73efbdd785ff703ce77315 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTX24N100 IXTX24N100 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F976349FCD820&compId=IXTX24N100.pdf?ci_sign=8c8873cc3b813e3bcc60bb2ace6802ae127d5697 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
Produkt ist nicht verfügbar
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DAA200X1800NA DAA200X1800NA IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA995824A0EA360C7&compId=DAA200X1800NA.pdf?ci_sign=db1937538aeee57eb4a8511896da8a8361264e03 Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Case: SOT227B
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.21V
Max. off-state voltage: 1.8kV
Load current: 100A x2
Max. forward impulse current: 1.5kA
Features of semiconductor devices: avalanche breakdown effect
Type of semiconductor module: diode
auf Bestellung 8 Stücke:
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2+38.75 EUR
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CLA60MT1200NHB CLA60MT1200NHB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEF950EA5DBD8BF&compId=CLA60MT1200NHB.pdf?ci_sign=931ed8de95f4a498e58b92338e50a36a33e544fe Category: Triacs
Description: Triac; 1.2kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 325A
Mounting: THT
Case: TO247-3
Type of thyristor: triac
Kind of package: tube
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.22 EUR
11+6.61 EUR
Mindestbestellmenge: 7
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CLA80MT1200NHB CLA80MT1200NHB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA7822040C5C200C4&compId=CLA80MT1200NHB.pdf?ci_sign=b7d475d8ebe5374c36b717c8b05ac079131171a7 Category: Triacs
Description: Triac; 1.2kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 440A
Case: TO247-3
Kind of package: tube
Type of thyristor: triac
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
Mounting: THT
auf Bestellung 323 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.21 EUR
9+8.18 EUR
30+7.86 EUR
Mindestbestellmenge: 6
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CLA60MT1200NHR CLA60MT1200NHR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFAF1199F33C0C4&compId=CLA60MT1200NHR.pdf?ci_sign=667c2802955af27425e185a40228badc5bc85a18 Category: Triacs
Description: Triac; 1.2kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 325A
Mounting: THT
Case: ISO247™
Type of thyristor: triac
Kind of package: tube
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.67 EUR
7+11.03 EUR
30+10.84 EUR
Mindestbestellmenge: 5
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IXFR26N100P IXFR26N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BB9820&compId=IXFR26N100P.pdf?ci_sign=3b03500e95698d4c8c007286dc3266ee074c8df4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
On-state resistance: 0.43Ω
Drain current: 15A
Power dissipation: 290W
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 197nC
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
2+37.71 EUR
3+37.69 EUR
Mindestbestellmenge: 2
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IXFX26N100P IXFX26N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED0210783C38BF&compId=IXFK26N100P_IXFX26N100P.pdf?ci_sign=e3bbcbcc0f83667d3f1a627314a9d5c5be08eed7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Case: PLUS247™
Mounting: THT
On-state resistance: 390mΩ
Drain current: 26A
Power dissipation: 780W
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 197nC
Produkt ist nicht verfügbar
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IXFR26N120P IXFR26N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BCF820&compId=IXFR26N120P.pdf?ci_sign=a2dcdd142b39fa518d0ed9ca8e23f820f13262eb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; 320W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
On-state resistance: 0.55Ω
Drain current: 15A
Power dissipation: 320W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 225nC
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
2+42.79 EUR
Mindestbestellmenge: 2
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IXFK26N120P IXFK26N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28579882FBC9820&compId=IXFK(X)26N120P.pdf?ci_sign=b487e0c929a7e7b9a742cefa0bc697ee9564f6a4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 26A; 960W; TO264
Case: TO264
Mounting: THT
On-state resistance: 0.5Ω
Drain current: 26A
Power dissipation: 960W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 255nC
Produkt ist nicht verfügbar
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IXTP80N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D406B88E9F9820&compId=IXTA(P)80N10T.pdf?ci_sign=bc8f5f5b020fd346b1d379e0314e69667636f1ab
IXTP80N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.92 EUR
27+2.67 EUR
29+2.53 EUR
Mindestbestellmenge: 19
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IXTA80N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D406B88E9F9820&compId=IXTA(P)80N10T.pdf?ci_sign=bc8f5f5b020fd346b1d379e0314e69667636f1ab
IXTA80N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
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IXTA180N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D545772189D820&compId=IXTA(P)180N10T.pdf?ci_sign=95831666b0a60635c5fe5a67c516de81d010b765
IXTA180N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP180N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D545772189D820&compId=IXTA(P)180N10T.pdf?ci_sign=95831666b0a60635c5fe5a67c516de81d010b765
IXTP180N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
Produkt ist nicht verfügbar
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CPC1972GS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AF084E0C7&compId=CPC1972.pdf?ci_sign=ad681fe35f2cbf4725519c25a38bae72b51c2f77
CPC1972GS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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CPC1972GSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AF084E0C7&compId=CPC1972.pdf?ci_sign=ad681fe35f2cbf4725519c25a38bae72b51c2f77
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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FUO22-12N pVersion=0046&contRep=ZT&docId=005056AB82531EE987F55DC0A59378BF&compId=FUO22-12N.pdf?ci_sign=ff71e9cc4948b645864c0457bca1ed4e0808aba6
FUO22-12N
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 150A
Case: ISOPLUS i4-pac™ x024a
Electrical mounting: THT
Type of bridge rectifier: three-phase
Max. forward voltage: 1.2V
Load current: 30A
Max. forward impulse current: 150A
Max. off-state voltage: 1.2kV
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.63 EUR
5+17.62 EUR
10+16.93 EUR
Mindestbestellmenge: 4
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IXFN132N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF964F62AE6B820&compId=IXFN132N50P3.pdf?ci_sign=3d53e2e7d5a8766b34ef8c5d8db2b89f63097539
IXFN132N50P3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 112A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 39mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Gate charge: 250nC
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Pulsed drain current: 330A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFB132N50P3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4611EE4E6AA18&compId=IXFB132N50P3.pdf?ci_sign=5f657928f29000d858e2b0c3da93947744b88203
IXFB132N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Power dissipation: 1890W
Technology: HiPerFET™; Polar3™
Produkt ist nicht verfügbar
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IXFL132N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94FFC40FB820&compId=IXFL132N50P3.pdf?ci_sign=85792c6dcf977ebf78032c427263cc5303138c45
IXFL132N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Power dissipation: 520W
Produkt ist nicht verfügbar
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DSEI2X61-06C pVersion=0046&contRep=ZT&docId=E291FD18AE0956F19A99005056AB752F&compId=96508.pdf?ci_sign=fe3ba4231a432602470235eb4879bc415d83b33a
DSEI2X61-06C
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.8V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.96 EUR
5+28.8 EUR
Mindestbestellmenge: 3
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CPC1984Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493853439C0C7&compId=CPC1984Y.pdf?ci_sign=c4456eb49faad16e3d4dbbc32458cf0e8e594af7
CPC1984Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.66Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 4kV
Turn-on time: 10ms
Turn-off time: 2ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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MCC44-16io1B pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D60D0D8B85E27&compId=MCC44-16IO1B-DTE.pdf?ci_sign=ea286ae49b04ba3e975ed8e5bf2e0596849d9d2c pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCC44-16io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Electrical mounting: screw
Kind of package: bulk
Semiconductor structure: double series
Mechanical mounting: screw
Case: TO240AA
Type of semiconductor module: thyristor
Gate current: 100/200mA
Max. forward voltage: 1.34V
Load current: 49A
Max. forward impulse current: 1.15kA
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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IXTQ69N30P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D131A4635E27&compId=IXTQ69N30P-DTE.pdf?ci_sign=30ac47e4c9ca5a13d0405042e859205ebf2f7209
IXTQ69N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO3P; 330ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: Polar™
Kind of package: tube
Case: TO3P
Polarisation: unipolar
Gate charge: 156nC
Reverse recovery time: 330ns
On-state resistance: 49mΩ
Gate-source voltage: ±20V
Drain current: 69A
Drain-source voltage: 300V
Power dissipation: 500W
Produkt ist nicht verfügbar
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IXFH320N10T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2856F4A8DDE7820&compId=IXFH(T)320N10T2.pdf?ci_sign=712ea63a2238f63f81d01689168cb986a264e110
IXFH320N10T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Case: TO247-3
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Reverse recovery time: 98ns
Gate charge: 430nC
On-state resistance: 3.5mΩ
Power dissipation: 1kW
Drain-source voltage: 100V
Drain current: 320A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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VUO190-08NO7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE2BABEF7649AE53672&compId=VUO190-08NO7.pdf?ci_sign=7d5953cf66e9d79c0c489443ea692fb8e2598469
VUO190-08NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 240A; Ifsm: 2.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 240A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.07V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+83.94 EUR
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MD18200S-DKM2MM littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf?assetguid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.8kV; If: 200A; package S
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.5V
Load current: 200A
Max. load current: 310A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 6.5kA
Case: package S
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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PAA191 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A860C7&compId=PAA191.pdf?ci_sign=2ffa2a1db02679800af199023510c8a9cfbbbdad
PAA191
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Mounting: THT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.71 EUR
10+7.24 EUR
11+6.84 EUR
Mindestbestellmenge: 6
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PAA191S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A860C7&compId=PAA191.pdf?ci_sign=2ffa2a1db02679800af199023510c8a9cfbbbdad
PAA191S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Mounting: SMT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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PAA191STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A860C7&compId=PAA191.pdf?ci_sign=2ffa2a1db02679800af199023510c8a9cfbbbdad
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Mounting: SMT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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PLA191 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b
PLA191
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Manufacturer series: OptoMOS
Case: DIP6
Kind of output: MOSFET
Contacts configuration: SPST-NO
Mounting: THT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PLA191STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Manufacturer series: OptoMOS
Case: DIP6
Kind of output: MOSFET
Contacts configuration: SPST-NO
Mounting: SMT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK300N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB1B71634818BF&compId=IXF_300N20X3.pdf?ci_sign=d7ceaf98ba04f28d6cca73c11a6a109100fa462b
IXFK300N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; TO264
Kind of package: tube
Case: TO264
Kind of channel: enhancement
Mounting: THT
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 170ns
Gate charge: 375nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC200-16io1 pVersion=0046&contRep=ZT&docId=E29208AD5CE395F19A99005056AB752F&compId=L627.pdf?ci_sign=45ae8fd0beea3436de91781e35bd8c3b2e0c91a8 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTT170N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9185A4CE98DE27&compId=IXTK170N10P-DTE.pdf?ci_sign=9136904f8419278af3f28381c2ff94e364518191
IXTT170N10P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 198nC
Kind of channel: enhancement
Reverse recovery time: 120ns
Kind of package: tube
auf Bestellung 215 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.57 EUR
7+10.44 EUR
30+10.04 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXTK170N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9185A4CE98DE27&compId=IXTK170N10P-DTE.pdf?ci_sign=9136904f8419278af3f28381c2ff94e364518191
IXTK170N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of channel: enhancement
Reverse recovery time: 120ns
Kind of package: tube
auf Bestellung 312 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.26 EUR
7+10.4 EUR
25+10.28 EUR
100+9.98 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ52N30P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90C271079FBE27&compId=IXTQ52N30P-DTE.pdf?ci_sign=cf659494e94781585499e1614568475c46cc3563
IXTQ52N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO3P; 250ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 52A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Kind of package: tube
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.94 EUR
13+5.68 EUR
14+5.36 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXTY3N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4
IXTY3N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Kind of package: tube
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
104+0.69 EUR
Mindestbestellmenge: 104
Im Einkaufswagen  Stück im Wert von  UAH
IXTA3N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4
IXTA3N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Kind of package: tube
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXFB44N100P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED47B1C40012A18&compId=IXFB44N100P.pdf?ci_sign=fe6581ef286df05fe0b0acd958d2ed414c5337a2
IXFB44N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Kind of package: tube
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+28.19 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFK140N30P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5FBBF2FB0F8BF&compId=IXFK140N30P_IXFX140N30P.pdf?ci_sign=6d081054787efa2c56b843d54a6d6c3f464460d2
IXFK140N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 140A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Kind of package: tube
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.59 EUR
10+19.81 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFB60N80P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B28FB248CCFA4A15&compId=IXFB60N80P.pdf?ci_sign=74ac471adf1c30241a4f29653fe0f24dc4a054f0
IXFB60N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Kind of package: tube
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.82 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFR18N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B09820&compId=IXFR18N90P.pdf?ci_sign=630c9b0ce412688e2b82a725d5ca14f372c1c7c0
IXFR18N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 10.5A; Idm: 36A; 200W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 10.5A
Pulsed drain current: 36A
Power dissipation: 200W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 97nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Kind of package: tube
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.79 EUR
6+12.37 EUR
7+11.7 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFH120N15P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052
IXFH120N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 217 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.4 EUR
9+8.22 EUR
10+7.52 EUR
30+7.48 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFH52N30P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5E98F50BC18BF&compId=IXF(V%2CH)52N30P(S).pdf?ci_sign=364d4b58b7cffdd5dffcd14a44a5a11a01598e3a
IXFH52N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 110nC
Reverse recovery time: 160ns
On-state resistance: 73mΩ
Gate-source voltage: ±20V
Drain current: 52A
Drain-source voltage: 300V
Power dissipation: 400W
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.75 EUR
12+6.18 EUR
13+5.83 EUR
120+5.68 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFB300N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED46E259E172A18&compId=IXFB300N10P.pdf?ci_sign=9dc76b5f08d73e0cf6cbcdad5881837d048e6e99
IXFB300N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 1.5kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 279nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Kind of package: tube
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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MMIX1F40N110P DS100431(MMIX1F40N110P).pdf
MMIX1F40N110P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+60.78 EUR
10+58.46 EUR
20+58.43 EUR
Mindestbestellmenge: 2
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CPC1906Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F1900C7&compId=CPC1906.pdf?ci_sign=ecc876797bb2c9d84a9e02b4914db18b397562b5
CPC1906Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 10ms
Turn-off time: 5ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP44N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a
IXTP44N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO220AB
On-state resistance: 30mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 60ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
36+1.99 EUR
57+1.27 EUR
60+1.2 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
MDNA360UB2200PTED MDNA360UB2200PTED.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 135A
Pulsed collector current: 280A
Produkt ist nicht verfügbar
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MDNA210UB2200PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Produkt ist nicht verfügbar
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MDNA280UB2200PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Produkt ist nicht verfügbar
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MCNA120UI2200TED MCNA120UI2200TED.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; 190W
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 150A
Power dissipation: 190W
Max. off-state voltage: 1.7kV
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Semiconductor structure: diode/transistor
Case: E2-Pack
Application: Inverter
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Produkt ist nicht verfügbar
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LOC110 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6
LOC110
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; THT; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: photodiode
Case: DIP8
Insulation voltage: 3.75kV
auf Bestellung 414 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.99 EUR
35+2.07 EUR
37+1.96 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IXTU4N70X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_4n70x2_datasheet.pdf.pdf
IXTU4N70X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.66 EUR
30+2.4 EUR
35+2.09 EUR
37+1.97 EUR
Mindestbestellmenge: 27
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IXTA4N70X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_4n70x2_datasheet.pdf.pdf
IXTA4N70X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.89 EUR
28+2.6 EUR
32+2.27 EUR
34+2.14 EUR
Mindestbestellmenge: 25
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PLB150S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7960C7&compId=PLB150.pdf?ci_sign=e6a835b33cf7bbb6db157533fe16deb901f9ab13
PLB150S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Kind of output: MOSFET
On-state resistance: 7Ω
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-off time: 2.5ms
Turn-on time: 1ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.67 EUR
15+4.93 EUR
16+4.66 EUR
Mindestbestellmenge: 9
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IXFR24N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B8D820&compId=IXFR24N100Q3.pdf?ci_sign=ca4e72774d87e585c7a699e877221fe57b34009d
IXFR24N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+30.03 EUR
Mindestbestellmenge: 3
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IXFK24N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCD172354D3820&compId=IXFK(X)24N100Q3.pdf?ci_sign=d4b7827559308d1b5d73efbdd785ff703ce77315
IXFK24N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 1kW
Case: TO264
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFN24N100 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A89ECE2C62351E27&compId=IXFN24N100-DTE.pdf?ci_sign=25e1c0067815d2041ecf400ffd60ad891352f678
IXFN24N100
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: SOT227B
On-state resistance: 390mΩ
Gate charge: 250nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Gate-source voltage: ±30V
Technology: HiPerFET™
Pulsed drain current: 96A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFX24N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCD172354D3820&compId=IXFK(X)24N100Q3.pdf?ci_sign=d4b7827559308d1b5d73efbdd785ff703ce77315
IXFX24N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTX24N100 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F976349FCD820&compId=IXTX24N100.pdf?ci_sign=8c8873cc3b813e3bcc60bb2ace6802ae127d5697
IXTX24N100
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
Produkt ist nicht verfügbar
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DAA200X1800NA pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA995824A0EA360C7&compId=DAA200X1800NA.pdf?ci_sign=db1937538aeee57eb4a8511896da8a8361264e03
DAA200X1800NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Case: SOT227B
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.21V
Max. off-state voltage: 1.8kV
Load current: 100A x2
Max. forward impulse current: 1.5kA
Features of semiconductor devices: avalanche breakdown effect
Type of semiconductor module: diode
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+38.75 EUR
Mindestbestellmenge: 2
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CLA60MT1200NHB pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEF950EA5DBD8BF&compId=CLA60MT1200NHB.pdf?ci_sign=931ed8de95f4a498e58b92338e50a36a33e544fe
CLA60MT1200NHB
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 325A
Mounting: THT
Case: TO247-3
Type of thyristor: triac
Kind of package: tube
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.22 EUR
11+6.61 EUR
Mindestbestellmenge: 7
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CLA80MT1200NHB pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA7822040C5C200C4&compId=CLA80MT1200NHB.pdf?ci_sign=b7d475d8ebe5374c36b717c8b05ac079131171a7
CLA80MT1200NHB
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 440A
Case: TO247-3
Kind of package: tube
Type of thyristor: triac
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
Mounting: THT
auf Bestellung 323 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.21 EUR
9+8.18 EUR
30+7.86 EUR
Mindestbestellmenge: 6
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CLA60MT1200NHR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFAF1199F33C0C4&compId=CLA60MT1200NHR.pdf?ci_sign=667c2802955af27425e185a40228badc5bc85a18
CLA60MT1200NHR
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 325A
Mounting: THT
Case: ISO247™
Type of thyristor: triac
Kind of package: tube
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.67 EUR
7+11.03 EUR
30+10.84 EUR
Mindestbestellmenge: 5
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IXFR26N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BB9820&compId=IXFR26N100P.pdf?ci_sign=3b03500e95698d4c8c007286dc3266ee074c8df4
IXFR26N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
On-state resistance: 0.43Ω
Drain current: 15A
Power dissipation: 290W
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 197nC
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+37.71 EUR
3+37.69 EUR
Mindestbestellmenge: 2
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IXFX26N100P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED0210783C38BF&compId=IXFK26N100P_IXFX26N100P.pdf?ci_sign=e3bbcbcc0f83667d3f1a627314a9d5c5be08eed7
IXFX26N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Case: PLUS247™
Mounting: THT
On-state resistance: 390mΩ
Drain current: 26A
Power dissipation: 780W
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 197nC
Produkt ist nicht verfügbar
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IXFR26N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BCF820&compId=IXFR26N120P.pdf?ci_sign=a2dcdd142b39fa518d0ed9ca8e23f820f13262eb
IXFR26N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; 320W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
On-state resistance: 0.55Ω
Drain current: 15A
Power dissipation: 320W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 225nC
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.79 EUR
Mindestbestellmenge: 2
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IXFK26N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28579882FBC9820&compId=IXFK(X)26N120P.pdf?ci_sign=b487e0c929a7e7b9a742cefa0bc697ee9564f6a4
IXFK26N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 26A; 960W; TO264
Case: TO264
Mounting: THT
On-state resistance: 0.5Ω
Drain current: 26A
Power dissipation: 960W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 255nC
Produkt ist nicht verfügbar
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