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MKE38P600LB IXYS SMPD%20MOSFET%20and%20IGBTs_Product%20Brief_01.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 600V; 50A; SMPD; double series
Semiconductor structure: double series
Reverse recovery time: 660ns
Drain-source voltage: 600V
Drain current: 50A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 0.19µC
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SMPD
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DMA40U1800GU DMA40U1800GU IXYS media?resourcetype=datasheets&itemid=f71e2749-7cb7-4a6d-a573-5ff9e7c0a117&filename=littelfuse%2520power%2520semiconductors%2520dma40u1800gu%2520datasheet.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A
Leads: flat pin
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
Max. off-state voltage: 1.8kV
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
auf Bestellung 83 Stücke:
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5+15.37 EUR
7+10.90 EUR
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CPC2330N CPC2330N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891AC0C7&compId=CPC2330N.pdf?ci_sign=029ea682cdcd4f7973c59961ae0fa6d8e53884ee Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
auf Bestellung 484 Stücke:
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20+3.59 EUR
32+2.25 EUR
34+2.12 EUR
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CPC2330NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891AC0C7&compId=CPC2330N.pdf?ci_sign=029ea682cdcd4f7973c59961ae0fa6d8e53884ee Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
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IXTP450P2 IXTP450P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55001B8D0D820&compId=IXTH(P%2CQ)450P2.pdf?ci_sign=bd2a070be623e6483ee1ebfc57c7e655c7dd0ea6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
auf Bestellung 177 Stücke:
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13+5.86 EUR
23+3.19 EUR
24+3.02 EUR
100+2.90 EUR
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IXTA3N100D2 IXTA3N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBD9B42C73B820&compId=IXTA(P)3N100D2.pdf?ci_sign=c245ce0cffe79380fadde6d25a375768a49f0754 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
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IXTA3N100D2HV IXTA3N100D2HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC857820&compId=IXTA3N100D2HV.pdf?ci_sign=f5984504d3ae9f0565200babfc9d597aed5ffc16 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
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CPC3909CTR CPC3909CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE791A0140A2F8D4746&compId=CPC3909.pdf?ci_sign=86033a3d9d3a272cbc592fdba02ef09d31cbffe8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89
Mounting: SMD
Drain-source voltage: 400V
Drain current: 0.3A
On-state resistance: 9Ω
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Case: SOT89
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VBO130-16NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FD5CE1FCECA0C4&compId=VBO130-16NO7.pdf?ci_sign=cdd6350d06bf034525ea3500b4608a7fe5944bba Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
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VBO130-08NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FD5614105840C4&compId=VBO130-08NO7.pdf?ci_sign=5eb6ffa3965786017a62ee02e43ef71a157e8e67 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
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VBO130-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FD515B60BDA0C4&compId=VBO130-12NO7.pdf?ci_sign=22fff7baeda63192d4b71b3dd167d856c31e71c5 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
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VBO130-18NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FD5FB3FE20A0C4&compId=VBO130-18NO7.pdf?ci_sign=a0c591ca8bdd37dbe3cefb717bfa7047ef483326 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.8kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
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MCC44-16io1B IXYS Littelfuse-Power-Semiconductors-MCC44-16io1B-Datasheet?assetguid=229b9887-d9f3-42c3-a6e0-14d1778fab40 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Electrical mounting: screw
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.34V
Load current: 49A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Mechanical mounting: screw
Type of semiconductor module: thyristor
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MCD162-18io1 MCD162-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01F68DDF93E27&compId=MCD162-18IO1-DTE.pdf?ci_sign=455e3bcba99267b8d353287e50d54a847388ebe6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. load current: 300A
Max. forward voltage: 1.03V
Load current: 181A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Type of semiconductor module: diode-thyristor
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
1+79.09 EUR
6+76.71 EUR
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IXFP30N25X3M IXFP30N25X3M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A17820&compId=IXFP30N25X3M.pdf?ci_sign=c43fccb4881a3c2a85a82e3454dc2bf93fc5afd8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
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LBA710S LBA710S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE320E0C7&compId=LBA710.pdf?ci_sign=b2bcf3bea0ade2d924338f229a01b2c3b3a17049 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
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LBA710STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE320E0C7&compId=LBA710.pdf?ci_sign=b2bcf3bea0ade2d924338f229a01b2c3b3a17049 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
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PD2401 PD2401 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98480C7&compId=PD2401.pdf?ci_sign=a60ef1f1aa10789c66a0d571757966686af45183 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: THT
Operating temperature: -40...85°C
Case: DIP4
auf Bestellung 194 Stücke:
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10+7.22 EUR
11+6.51 EUR
12+6.16 EUR
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VVZB135-16IOXT IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA95FA6ACC5A25A0C4&compId=VVZB135-16IOXT.pdf?ci_sign=0abee15b91779cab8eaf3183e5ed18c6123f9f86 Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Technology: X2PT
Mechanical mounting: screw
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IXTP50N20P IXTP50N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 208 Stücke:
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15+4.89 EUR
22+3.40 EUR
23+3.22 EUR
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IXTQ50N20P IXTQ50N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 264 Stücke:
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11+6.62 EUR
19+3.96 EUR
20+3.75 EUR
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IXTP50N25T IXTP50N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4E4FF92DFD820&compId=IXTA(H%2CP%2CQ)50N25T.pdf?ci_sign=7e809dd509feff8e274b784c3f608f03c09bb7c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 354 Stücke:
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12+6.48 EUR
17+4.30 EUR
18+4.08 EUR
50+3.90 EUR
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IXTP50N20PM IXTP50N20PM IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF907F47B5969E27&compId=IXTP50N20PM-DTE.pdf?ci_sign=3960f7e3d34464ae58cc23f154da7e0b579f8434 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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DFE240X600NA DFE240X600NA IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA995A1F2407680C7&compId=DFE240X600NA.pdf?ci_sign=eb8958e4591736478ecee9d24bfca02d7dcd69df Category: Diode modules
Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.2V
Load current: 120A x2
Semiconductor structure: double independent
Reverse recovery time: 35ns
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Type of semiconductor module: diode
auf Bestellung 7 Stücke:
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2+40.57 EUR
3+40.55 EUR
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MMIX1T600N04T2
+1
 		MMIX1T600N04T2 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Case: SMPD
Reverse recovery time: 100ns
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 2kA
Mounting: SMD
auf Bestellung 20 Stücke:
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2+36.95 EUR
3+36.94 EUR
20+35.74 EUR
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IXTN600N04T2 IXTN600N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF5F55F2CE31820&compId=IXTN600N04T2.pdf?ci_sign=21248338ae2fa9deea23c6d6848e893366c6ced4 Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Semiconductor structure: single transistor
Reverse recovery time: 100ns
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.3mΩ
Power dissipation: 940W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 1.8kA
Type of semiconductor module: MOSFET transistor
Case: SOT227B
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IXTK600N04T2 IXTK600N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49FEAF5633820&compId=IXTK(X)600N04T2.pdf?ci_sign=31b642072eb49cef1a86e3e7413c5068bef4c432 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Reverse recovery time: 100ns
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 590nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
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IXTA1N120P IXTA1N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Case: TO263
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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IXTP1N120P IXTP1N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns
Case: TO220AB
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
Mounting: THT
Produkt ist nicht verfügbar
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CPC3720CTR CPC3720CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6FEB8A4E29820&compId=CPC3720.pdf?ci_sign=c1cbf9c1b8179c87f7fb0153f8c41f0f7763ed94 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Case: SOT89
Drain-source voltage: 350V
Drain current: 0.13A
On-state resistance: 22Ω
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Mounting: SMD
auf Bestellung 567 Stücke:
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103+0.70 EUR
182+0.39 EUR
199+0.36 EUR
260+0.28 EUR
274+0.26 EUR
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IXFK220N15P IXFK220N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F951AAE15F820&compId=IXFK220N15P.pdf?ci_sign=7aa1b38f019148fe6172bcbeab14c2e612cec2f5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 220A; 1250W; TO264
Case: TO264
Drain-source voltage: 150V
Drain current: 220A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 162nC
Kind of channel: enhancement
Mounting: THT
Produkt ist nicht verfügbar
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IXDF602SIA IXDF602SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 85 Stücke:
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81+0.89 EUR
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IXDF602SIATR IXDF602SIATR IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
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IXTP270N04T4 IXTP270N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Reverse recovery time: 48ns
Drain-source voltage: 40V
Drain current: 270A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
auf Bestellung 59 Stücke:
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19+3.90 EUR
22+3.27 EUR
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IXTH270N04T4 IXTH270N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Reverse recovery time: 48ns
Drain-source voltage: 40V
Drain current: 270A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
auf Bestellung 15 Stücke:
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IXTX110N20L2 IXTX110N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9939600E0EFF298BF&compId=IXT_110N20L2.pdf?ci_sign=2efcd7c71b9a3d0ca4fa8423b4cac407d61b052b Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
Technology: Linear L2™
Produkt ist nicht verfügbar
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IXFJ20N85X IXFJ20N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F945957253820&compId=IXFJ20N85X.pdf?ci_sign=e334aef3e464bae80a61a86cfe53bb41ae5251bd Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 9.5A; Idm: 50A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 9.5A
Power dissipation: 110W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Features of semiconductor devices: ultra junction x-class
Technology: HiPerFET™; X-Class
Pulsed drain current: 50A
auf Bestellung 5 Stücke:
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5+14.30 EUR
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IXFA20N85XHV IXFA20N85XHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7D2BF5BAE38BF&compId=IXFA20N85XHV.pdf?ci_sign=81d9ba09897f60f2974f4faff6b6192eda367229 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 20A; 540W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Technology: HiPerFET™; X-Class
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IXFH20N85X IXFH20N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD263488393820&compId=IXFH(P)20N85X.pdf?ci_sign=7c12a971503592693c6f40300c433ab581bc443f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO247-3; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXCY10M45S IXCY10M45S IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51 Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Operating current: 2...100mA
Power dissipation: 40W
Kind of integrated circuit: current regulator
Mounting: SMD
Operating temperature: -55...150°C
Case: TO252
Operating voltage: 450V DC
auf Bestellung 145 Stücke:
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14+5.33 EUR
31+2.33 EUR
33+2.20 EUR
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FUO22-16N FUO22-16N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE987F60697D4B078BF&compId=FUO22-16N.pdf?ci_sign=8f207ee3a5ebe1203f4c3e52af66353e14f5aca2 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
auf Bestellung 142 Stücke:
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4+19.10 EUR
10+18.78 EUR
25+18.36 EUR
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VBO22-16NO8 VBO22-16NO8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B1384D1645E0C7&compId=VBO22-16NO8.pdf?ci_sign=23b029c4e1880883b4d18582f432dd6cd01b04bd Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 14A
Max. forward impulse current: 380A
Electrical mounting: THT
Version: square
Leads: connectors FASTON
Case: FO-B
Kind of package: bulk
auf Bestellung 50 Stücke:
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5+16.30 EUR
6+12.37 EUR
50+12.17 EUR
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VUO122-16NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA889597E3E58C20C4&compId=VUO122-16NO7.pdf?ci_sign=716e3f7bd5b9c1ec372cbce2e9c72937a23c94ee Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 125A; Ifsm: 1kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 125A
Max. forward impulse current: 1kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.13V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
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MCD162-08io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFC4E7E935E60C4&compId=MCD162-08io1.pdf?ci_sign=03f82f5f8d0583a25542114cb0a3a66efbf7ca65 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 0.8kV
Max. load current: 300A
Max. forward voltage: 1.03V
Load current: 181A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MCD162-12io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01E79FA1EBE27&compId=MCD162-12IO1-DTE.pdf?ci_sign=3db22b1cd7d642a98c451a99359010031bc9e7d4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.2kV
Max. load current: 300A
Max. forward voltage: 1.03V
Load current: 181A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MCD162-14io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFC6ECBE71100C4&compId=MCD162-14io1.pdf?ci_sign=b5a8f596eaa0ee9533b1b4a145436a4dcb00e272 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.4kV
Max. load current: 300A
Max. forward voltage: 1.03V
Load current: 181A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MD16200S-DKM2MM IXYS littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf?assetguid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8 Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Case: package S
Max. off-state voltage: 1.6kV
Max. load current: 310A
Max. forward voltage: 1.5V
Load current: 200A
Semiconductor structure: common cathode; double
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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IXDD604D2TR IXDD604D2TR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: DFN8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
auf Bestellung 88 Stücke:
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20+3.63 EUR
31+2.35 EUR
49+1.49 EUR
51+1.42 EUR
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IXDF604PI IXDF604PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting; non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: THT
auf Bestellung 530 Stücke:
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36+2.03 EUR
39+1.87 EUR
53+1.37 EUR
55+1.30 EUR
500+1.26 EUR
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IXDD604PI IXDD604PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: THT
auf Bestellung 151 Stücke:
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21+3.55 EUR
32+2.27 EUR
48+1.52 EUR
50+1.43 EUR
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IXDI604PI IXDI604PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: THT
auf Bestellung 1020 Stücke:
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28+2.65 EUR
38+1.89 EUR
49+1.49 EUR
51+1.42 EUR
100+1.36 EUR
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IXDI604SIA IXDI604SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
auf Bestellung 1064 Stücke:
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22+3.39 EUR
35+2.04 EUR
49+1.49 EUR
51+1.42 EUR
100+1.40 EUR
500+1.36 EUR
Mindestbestellmenge: 22
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IXDD604SI IXDD604SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: SO8-EP
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
auf Bestellung 1103 Stücke:
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13+5.59 EUR
27+2.73 EUR
28+2.59 EUR
200+2.49 EUR
Mindestbestellmenge: 13
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IXDF604SIA IXDF604SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting; non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
auf Bestellung 347 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.39 EUR
35+2.04 EUR
48+1.52 EUR
50+1.43 EUR
Mindestbestellmenge: 22
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IX2127G IX2127G IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85F670F3CC58BF&compId=IX2127.pdf?ci_sign=38a8b7c0bf9e260942cd93345172f63defde3c14 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: tube
Voltage class: 600V
Output current: -500...250mA
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.80 EUR
Mindestbestellmenge: 90
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IX2127N IX2127N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85F670F3CC58BF&compId=IX2127.pdf?ci_sign=38a8b7c0bf9e260942cd93345172f63defde3c14 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Supply voltage: 9...12V
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: tube
Voltage class: 600V
Output current: -500...250mA
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
82+0.87 EUR
Mindestbestellmenge: 82
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IXBOD1-12R IXBOD1-12R IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4 Category: Thyristors - others
Description: Thyristor: BOD x2; 1.25A; BOD; THT; bulk; 1.2kV
Kind of package: bulk
Breakover voltage: 1.2kV
Type of thyristor: BOD x2
Mounting: THT
Case: BOD
Max. load current: 1.25A
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
1+87.19 EUR
10+85.73 EUR
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IXBOD1-12RD IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4 Category: Thyristors - others
Description: Thyristor: BOD x2; 0.2A; BOD; THT; bulk; 1.2kV
Kind of package: bulk
Features of semiconductor devices: version RD (internal diode)
Breakover voltage: 1.2kV
Type of thyristor: BOD x2
Mounting: THT
Case: BOD
Max. load current: 0.2A
Produkt ist nicht verfügbar
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IXCP10M90S IXCP10M90S IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51 Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
Produkt ist nicht verfügbar
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IXGX82N120A3 IXGX82N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADA05B5A3C9820&compId=IXGK(x)82N120A3.pdf?ci_sign=fbc08b8c0cc6e5d5e4e3183ea9feaad9775fef7e Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
Produkt ist nicht verfügbar
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MKE38P600LB SMPD%20MOSFET%20and%20IGBTs_Product%20Brief_01.pdf
Hersteller: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 600V; 50A; SMPD; double series
Semiconductor structure: double series
Reverse recovery time: 660ns
Drain-source voltage: 600V
Drain current: 50A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 0.19µC
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SMPD
Produkt ist nicht verfügbar
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DMA40U1800GU media?resourcetype=datasheets&itemid=f71e2749-7cb7-4a6d-a573-5ff9e7c0a117&filename=littelfuse%2520power%2520semiconductors%2520dma40u1800gu%2520datasheet.pdf
DMA40U1800GU
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A
Leads: flat pin
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
Max. off-state voltage: 1.8kV
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.37 EUR
7+10.90 EUR
Mindestbestellmenge: 5
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CPC2330N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891AC0C7&compId=CPC2330N.pdf?ci_sign=029ea682cdcd4f7973c59961ae0fa6d8e53884ee
CPC2330N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
auf Bestellung 484 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.59 EUR
32+2.25 EUR
34+2.12 EUR
Mindestbestellmenge: 20
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CPC2330NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891AC0C7&compId=CPC2330N.pdf?ci_sign=029ea682cdcd4f7973c59961ae0fa6d8e53884ee
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
Produkt ist nicht verfügbar
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IXTP450P2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55001B8D0D820&compId=IXTH(P%2CQ)450P2.pdf?ci_sign=bd2a070be623e6483ee1ebfc57c7e655c7dd0ea6
IXTP450P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.86 EUR
23+3.19 EUR
24+3.02 EUR
100+2.90 EUR
Mindestbestellmenge: 13
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IXTA3N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBD9B42C73B820&compId=IXTA(P)3N100D2.pdf?ci_sign=c245ce0cffe79380fadde6d25a375768a49f0754
IXTA3N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Produkt ist nicht verfügbar
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IXTA3N100D2HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC857820&compId=IXTA3N100D2HV.pdf?ci_sign=f5984504d3ae9f0565200babfc9d597aed5ffc16
IXTA3N100D2HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Produkt ist nicht verfügbar
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CPC3909CTR pVersion=0046&contRep=ZT&docId=005056AB752F1EE791A0140A2F8D4746&compId=CPC3909.pdf?ci_sign=86033a3d9d3a272cbc592fdba02ef09d31cbffe8
CPC3909CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89
Mounting: SMD
Drain-source voltage: 400V
Drain current: 0.3A
On-state resistance: 9Ω
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Case: SOT89
Produkt ist nicht verfügbar
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VBO130-16NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FD5CE1FCECA0C4&compId=VBO130-16NO7.pdf?ci_sign=cdd6350d06bf034525ea3500b4608a7fe5944bba
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
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VBO130-08NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FD5614105840C4&compId=VBO130-08NO7.pdf?ci_sign=5eb6ffa3965786017a62ee02e43ef71a157e8e67
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
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VBO130-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FD515B60BDA0C4&compId=VBO130-12NO7.pdf?ci_sign=22fff7baeda63192d4b71b3dd167d856c31e71c5
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
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VBO130-18NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FD5FB3FE20A0C4&compId=VBO130-18NO7.pdf?ci_sign=a0c591ca8bdd37dbe3cefb717bfa7047ef483326
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.8kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
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MCC44-16io1B Littelfuse-Power-Semiconductors-MCC44-16io1B-Datasheet?assetguid=229b9887-d9f3-42c3-a6e0-14d1778fab40
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Electrical mounting: screw
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.34V
Load current: 49A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Mechanical mounting: screw
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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MCD162-18io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01F68DDF93E27&compId=MCD162-18IO1-DTE.pdf?ci_sign=455e3bcba99267b8d353287e50d54a847388ebe6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCD162-18io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. load current: 300A
Max. forward voltage: 1.03V
Load current: 181A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Type of semiconductor module: diode-thyristor
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+79.09 EUR
6+76.71 EUR
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IXFP30N25X3M pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A17820&compId=IXFP30N25X3M.pdf?ci_sign=c43fccb4881a3c2a85a82e3454dc2bf93fc5afd8
IXFP30N25X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
Produkt ist nicht verfügbar
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LBA710S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE320E0C7&compId=LBA710.pdf?ci_sign=b2bcf3bea0ade2d924338f229a01b2c3b3a17049
LBA710S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
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LBA710STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE320E0C7&compId=LBA710.pdf?ci_sign=b2bcf3bea0ade2d924338f229a01b2c3b3a17049
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
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PD2401 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98480C7&compId=PD2401.pdf?ci_sign=a60ef1f1aa10789c66a0d571757966686af45183
PD2401
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: THT
Operating temperature: -40...85°C
Case: DIP4
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.22 EUR
11+6.51 EUR
12+6.16 EUR
Mindestbestellmenge: 10
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VVZB135-16IOXT pVersion=0046&contRep=ZT&docId=005056AB90B41EDA95FA6ACC5A25A0C4&compId=VVZB135-16IOXT.pdf?ci_sign=0abee15b91779cab8eaf3183e5ed18c6123f9f86
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXTP50N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34
IXTP50N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.89 EUR
22+3.40 EUR
23+3.22 EUR
Mindestbestellmenge: 15
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IXTQ50N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34
IXTQ50N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.62 EUR
19+3.96 EUR
20+3.75 EUR
Mindestbestellmenge: 11
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IXTP50N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4E4FF92DFD820&compId=IXTA(H%2CP%2CQ)50N25T.pdf?ci_sign=7e809dd509feff8e274b784c3f608f03c09bb7c0
IXTP50N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 354 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.48 EUR
17+4.30 EUR
18+4.08 EUR
50+3.90 EUR
Mindestbestellmenge: 12
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IXTP50N20PM pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF907F47B5969E27&compId=IXTP50N20PM-DTE.pdf?ci_sign=3960f7e3d34464ae58cc23f154da7e0b579f8434
IXTP50N20PM
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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DFE240X600NA pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA995A1F2407680C7&compId=DFE240X600NA.pdf?ci_sign=eb8958e4591736478ecee9d24bfca02d7dcd69df
DFE240X600NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.2V
Load current: 120A x2
Semiconductor structure: double independent
Reverse recovery time: 35ns
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Type of semiconductor module: diode
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+40.57 EUR
3+40.55 EUR
Mindestbestellmenge: 2
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MMIX1T600N04T2 littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf
MMIX1T600N04T2
+1
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Case: SMPD
Reverse recovery time: 100ns
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 2kA
Mounting: SMD
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+36.95 EUR
3+36.94 EUR
20+35.74 EUR
Mindestbestellmenge: 2
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IXTN600N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF5F55F2CE31820&compId=IXTN600N04T2.pdf?ci_sign=21248338ae2fa9deea23c6d6848e893366c6ced4
IXTN600N04T2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Semiconductor structure: single transistor
Reverse recovery time: 100ns
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.3mΩ
Power dissipation: 940W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 1.8kA
Type of semiconductor module: MOSFET transistor
Case: SOT227B
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTK600N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49FEAF5633820&compId=IXTK(X)600N04T2.pdf?ci_sign=31b642072eb49cef1a86e3e7413c5068bef4c432
IXTK600N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Reverse recovery time: 100ns
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 590nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Produkt ist nicht verfügbar
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IXTA1N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0
IXTA1N120P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Case: TO263
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP1N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0
IXTP1N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns
Case: TO220AB
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC3720CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6FEB8A4E29820&compId=CPC3720.pdf?ci_sign=c1cbf9c1b8179c87f7fb0153f8c41f0f7763ed94
CPC3720CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Case: SOT89
Drain-source voltage: 350V
Drain current: 0.13A
On-state resistance: 22Ω
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Mounting: SMD
auf Bestellung 567 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.70 EUR
182+0.39 EUR
199+0.36 EUR
260+0.28 EUR
274+0.26 EUR
Mindestbestellmenge: 103
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IXFK220N15P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F951AAE15F820&compId=IXFK220N15P.pdf?ci_sign=7aa1b38f019148fe6172bcbeab14c2e612cec2f5
IXFK220N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 220A; 1250W; TO264
Case: TO264
Drain-source voltage: 150V
Drain current: 220A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 162nC
Kind of channel: enhancement
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDF602SIA pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDF602SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
50+1.44 EUR
76+0.94 EUR
81+0.89 EUR
Mindestbestellmenge: 44
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IXDF602SIATR IXD_602.pdf
IXDF602SIATR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP270N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81
IXTP270N04T4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Reverse recovery time: 48ns
Drain-source voltage: 40V
Drain current: 270A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.33 EUR
19+3.90 EUR
22+3.27 EUR
24+3.09 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IXTH270N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81
IXTH270N04T4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Reverse recovery time: 48ns
Drain-source voltage: 40V
Drain current: 270A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.76 EUR
Mindestbestellmenge: 15
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IXTX110N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE9939600E0EFF298BF&compId=IXT_110N20L2.pdf?ci_sign=2efcd7c71b9a3d0ca4fa8423b4cac407d61b052b
IXTX110N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
Technology: Linear L2™
Produkt ist nicht verfügbar
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IXFJ20N85X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F945957253820&compId=IXFJ20N85X.pdf?ci_sign=e334aef3e464bae80a61a86cfe53bb41ae5251bd
IXFJ20N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 9.5A; Idm: 50A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 9.5A
Power dissipation: 110W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Features of semiconductor devices: ultra junction x-class
Technology: HiPerFET™; X-Class
Pulsed drain current: 50A
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.30 EUR
Mindestbestellmenge: 5
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IXFA20N85XHV pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7D2BF5BAE38BF&compId=IXFA20N85XHV.pdf?ci_sign=81d9ba09897f60f2974f4faff6b6192eda367229
IXFA20N85XHV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 20A; 540W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Technology: HiPerFET™; X-Class
Produkt ist nicht verfügbar
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IXFH20N85X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD263488393820&compId=IXFH(P)20N85X.pdf?ci_sign=7c12a971503592693c6f40300c433ab581bc443f
IXFH20N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO247-3; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXCY10M45S pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51
IXCY10M45S
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Operating current: 2...100mA
Power dissipation: 40W
Kind of integrated circuit: current regulator
Mounting: SMD
Operating temperature: -55...150°C
Case: TO252
Operating voltage: 450V DC
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.33 EUR
31+2.33 EUR
33+2.20 EUR
Mindestbestellmenge: 14
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FUO22-16N pVersion=0046&contRep=ZT&docId=005056AB82531EE987F60697D4B078BF&compId=FUO22-16N.pdf?ci_sign=8f207ee3a5ebe1203f4c3e52af66353e14f5aca2
FUO22-16N
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.10 EUR
10+18.78 EUR
25+18.36 EUR
Mindestbestellmenge: 4
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VBO22-16NO8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B1384D1645E0C7&compId=VBO22-16NO8.pdf?ci_sign=23b029c4e1880883b4d18582f432dd6cd01b04bd
VBO22-16NO8
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 14A
Max. forward impulse current: 380A
Electrical mounting: THT
Version: square
Leads: connectors FASTON
Case: FO-B
Kind of package: bulk
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.30 EUR
6+12.37 EUR
50+12.17 EUR
Mindestbestellmenge: 5
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VUO122-16NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA889597E3E58C20C4&compId=VUO122-16NO7.pdf?ci_sign=716e3f7bd5b9c1ec372cbce2e9c72937a23c94ee
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 125A; Ifsm: 1kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 125A
Max. forward impulse current: 1kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.13V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCD162-08io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFC4E7E935E60C4&compId=MCD162-08io1.pdf?ci_sign=03f82f5f8d0583a25542114cb0a3a66efbf7ca65 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 0.8kV
Max. load current: 300A
Max. forward voltage: 1.03V
Load current: 181A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MCD162-12io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01E79FA1EBE27&compId=MCD162-12IO1-DTE.pdf?ci_sign=3db22b1cd7d642a98c451a99359010031bc9e7d4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.2kV
Max. load current: 300A
Max. forward voltage: 1.03V
Load current: 181A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD162-14io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFC6ECBE71100C4&compId=MCD162-14io1.pdf?ci_sign=b5a8f596eaa0ee9533b1b4a145436a4dcb00e272 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.4kV
Max. load current: 300A
Max. forward voltage: 1.03V
Load current: 181A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MD16200S-DKM2MM littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf?assetguid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Case: package S
Max. off-state voltage: 1.6kV
Max. load current: 310A
Max. forward voltage: 1.5V
Load current: 200A
Semiconductor structure: common cathode; double
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDD604D2TR pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDD604D2TR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: DFN8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.63 EUR
31+2.35 EUR
49+1.49 EUR
51+1.42 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXDF604PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDF604PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting; non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: THT
auf Bestellung 530 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
39+1.87 EUR
53+1.37 EUR
55+1.30 EUR
500+1.26 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IXDD604PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDD604PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: THT
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.55 EUR
32+2.27 EUR
48+1.52 EUR
50+1.43 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IXDI604PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDI604PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: THT
auf Bestellung 1020 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.65 EUR
38+1.89 EUR
49+1.49 EUR
51+1.42 EUR
100+1.36 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IXDI604SIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDI604SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
auf Bestellung 1064 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.39 EUR
35+2.04 EUR
49+1.49 EUR
51+1.42 EUR
100+1.40 EUR
500+1.36 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IXDD604SI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDD604SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: SO8-EP
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
auf Bestellung 1103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.59 EUR
27+2.73 EUR
28+2.59 EUR
200+2.49 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXDF604SIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDF604SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting; non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
auf Bestellung 347 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.39 EUR
35+2.04 EUR
48+1.52 EUR
50+1.43 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IX2127G pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85F670F3CC58BF&compId=IX2127.pdf?ci_sign=38a8b7c0bf9e260942cd93345172f63defde3c14
IX2127G
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: tube
Voltage class: 600V
Output current: -500...250mA
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.80 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
IX2127N pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85F670F3CC58BF&compId=IX2127.pdf?ci_sign=38a8b7c0bf9e260942cd93345172f63defde3c14
IX2127N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Supply voltage: 9...12V
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: tube
Voltage class: 600V
Output current: -500...250mA
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
IXBOD1-12R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4
IXBOD1-12R
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x2; 1.25A; BOD; THT; bulk; 1.2kV
Kind of package: bulk
Breakover voltage: 1.2kV
Type of thyristor: BOD x2
Mounting: THT
Case: BOD
Max. load current: 1.25A
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+87.19 EUR
10+85.73 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXBOD1-12RD pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x2; 0.2A; BOD; THT; bulk; 1.2kV
Kind of package: bulk
Features of semiconductor devices: version RD (internal diode)
Breakover voltage: 1.2kV
Type of thyristor: BOD x2
Mounting: THT
Case: BOD
Max. load current: 0.2A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXCP10M90S pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51
IXCP10M90S
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGX82N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADA05B5A3C9820&compId=IXGK(x)82N120A3.pdf?ci_sign=fbc08b8c0cc6e5d5e4e3183ea9feaad9775fef7e
IXGX82N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
Produkt ist nicht verfügbar
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