Foto | Bezeichnung | Hersteller | Beschreibung |
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MKE38P600LB | IXYS |
![]() Description: Transistor: N-MOSFET x2; unipolar; 600V; 50A; SMPD; double series Semiconductor structure: double series Reverse recovery time: 660ns Drain-source voltage: 600V Drain current: 50A On-state resistance: 45mΩ Type of transistor: N-MOSFET x2 Polarisation: unipolar Gate charge: 0.19µC Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SMPD |
Produkt ist nicht verfügbar |
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DMA40U1800GU | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A Leads: flat pin Electrical mounting: THT Version: flat Type of bridge rectifier: three-phase Case: GUFP Max. off-state voltage: 1.8kV Max. forward voltage: 0.74V Load current: 40A Max. forward impulse current: 370A |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC2330N | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA On-state resistance: 30Ω Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Contacts configuration: SPST-NO + SPST-NC Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Case: SO8 |
auf Bestellung 484 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC2330NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA On-state resistance: 30Ω Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Contacts configuration: SPST-NO + SPST-NC Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Case: SO8 |
Produkt ist nicht verfügbar |
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IXTP450P2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 16A On-state resistance: 0.33Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 43nC Kind of channel: enhancement Mounting: THT Case: TO220AB |
auf Bestellung 177 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA3N100D2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO263 On-state resistance: 6Ω Mounting: SMD Gate charge: 1.02µC Kind of package: tube Kind of channel: depletion Reverse recovery time: 17ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTA3N100D2HV | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO263HV On-state resistance: 6Ω Mounting: SMD Gate charge: 1.02µC Kind of package: tube Kind of channel: depletion Reverse recovery time: 17ns |
Produkt ist nicht verfügbar |
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CPC3909CTR | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89 Mounting: SMD Drain-source voltage: 400V Drain current: 0.3A On-state resistance: 9Ω Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±15V Case: SOT89 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
VBO130-16NO7 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 130A; Ifsm: 1.8kA Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 130A Max. forward impulse current: 1.8kA Electrical mounting: screw Mechanical mounting: screw Version: module Leads: M6 screws Case: PWS-E |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
VBO130-08NO7 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 130A; Ifsm: 1.8kA Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 130A Max. forward impulse current: 1.8kA Electrical mounting: screw Mechanical mounting: screw Version: module Leads: M6 screws Case: PWS-E |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
VBO130-12NO7 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 130A; Ifsm: 1.8kA Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 130A Max. forward impulse current: 1.8kA Electrical mounting: screw Mechanical mounting: screw Version: module Leads: M6 screws Case: PWS-E |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
VBO130-18NO7 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 130A; Ifsm: 1.8kA Type of bridge rectifier: single-phase Max. off-state voltage: 1.8kV Load current: 130A Max. forward impulse current: 1.8kA Electrical mounting: screw Mechanical mounting: screw Version: module Leads: M6 screws Case: PWS-E |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MCC44-16io1B | IXYS |
![]() Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V Electrical mounting: screw Case: TO240AA Max. off-state voltage: 1.6kV Max. forward voltage: 1.34V Load current: 49A Semiconductor structure: double series Gate current: 100/200mA Max. forward impulse current: 1.15kA Kind of package: bulk Mechanical mounting: screw Type of semiconductor module: thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MCD162-18io1 | IXYS |
![]() ![]() Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Case: Y4-M6 Kind of package: bulk Max. off-state voltage: 1.8kV Max. load current: 300A Max. forward voltage: 1.03V Load current: 181A Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 6kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.88V Type of semiconductor module: diode-thyristor |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP30N25X3M | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 30A Power dissipation: 36W Case: TO220FP On-state resistance: 60mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 82ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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LBA710S | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 0.6Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
LBA710STR | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 0.6Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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PD2401 | IXYS |
![]() Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase Body dimensions: 19.2x6.35x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 1A Type of relay: solid state Relay variant: 1-phase Switched voltage: max. 500V AC Control current max.: 100mA Mounting: THT Operating temperature: -40...85°C Case: DIP4 |
auf Bestellung 194 Stücke: Lieferzeit 14-21 Tag (e) |
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VVZB135-16IOXT | IXYS |
![]() Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV Type of semiconductor module: IGBT Semiconductor structure: diode/thyristor/IGBT Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 84A Case: E2-Pack Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 225A Power dissipation: 390W Technology: X2PT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IXTP50N20P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns |
auf Bestellung 208 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTQ50N20P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO3P Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns |
auf Bestellung 264 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP50N25T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO220AB On-state resistance: 60mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 166ns Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 354 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP50N20PM | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 20A Power dissipation: 90W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DFE240X600NA | IXYS |
![]() Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw Case: SOT227B Max. off-state voltage: 0.6kV Max. forward voltage: 1.2V Load current: 120A x2 Semiconductor structure: double independent Reverse recovery time: 35ns Max. forward impulse current: 1.2kA Electrical mounting: screw Mechanical mounting: screw Technology: FRED Type of semiconductor module: diode |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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MMIX1T600N04T2 | IXYS |
![]() Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W Case: SMPD Reverse recovery time: 100ns Drain-source voltage: 40V Drain current: 600A On-state resistance: 1.3mΩ Type of transistor: N-MOSFET Power dissipation: 830W Polarisation: unipolar Gate charge: 590nC Technology: GigaMOS™; TrenchT2™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 2kA Mounting: SMD |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTN600N04T2 | IXYS |
![]() Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA Semiconductor structure: single transistor Reverse recovery time: 100ns Drain-source voltage: 40V Drain current: 600A On-state resistance: 1.3mΩ Power dissipation: 940W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Gate charge: 590nC Technology: GigaMOS™; TrenchT2™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 1.8kA Type of semiconductor module: MOSFET transistor Case: SOT227B |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTK600N04T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns Reverse recovery time: 100ns Drain-source voltage: 40V Drain current: 600A On-state resistance: 1.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 590nC Kind of channel: enhancement Mounting: THT Case: TO264 |
Produkt ist nicht verfügbar |
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IXTA1N120P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns Case: TO263 Reverse recovery time: 900ns Drain-source voltage: 1.2kV Drain current: 1A On-state resistance: 20Ω Type of transistor: N-MOSFET Power dissipation: 63W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Kind of channel: enhancement Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTP1N120P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns Case: TO220AB Reverse recovery time: 900ns Drain-source voltage: 1.2kV Drain current: 1A On-state resistance: 20Ω Type of transistor: N-MOSFET Power dissipation: 63W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Kind of channel: enhancement Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CPC3720CTR | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89 Case: SOT89 Drain-source voltage: 350V Drain current: 0.13A On-state resistance: 22Ω Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±15V Mounting: SMD |
auf Bestellung 567 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK220N15P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 220A; 1250W; TO264 Case: TO264 Drain-source voltage: 150V Drain current: 220A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Gate charge: 162nC Kind of channel: enhancement Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXDF602SIA | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: inverting; non-inverting Turn-on time: 93ns Turn-off time: 93ns |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDF602SIATR | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: inverting; non-inverting Turn-on time: 93ns Turn-off time: 93ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTP270N04T4 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns Reverse recovery time: 48ns Drain-source voltage: 40V Drain current: 270A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 182nC Kind of channel: enhancement Mounting: THT Case: TO220AB |
auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH270N04T4 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns Reverse recovery time: 48ns Drain-source voltage: 40V Drain current: 270A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 182nC Kind of channel: enhancement Mounting: THT Case: TO247-3 |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTX110N20L2 | IXYS |
![]() Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 110A Power dissipation: 960W Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 420ns Technology: Linear L2™ |
Produkt ist nicht verfügbar |
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IXFJ20N85X | IXYS |
![]() Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 9.5A; Idm: 50A; 110W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 9.5A Power dissipation: 110W Case: ISO247™ Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 190ns Features of semiconductor devices: ultra junction x-class Technology: HiPerFET™; X-Class Pulsed drain current: 50A |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA20N85XHV | IXYS |
![]() Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 20A; 540W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 20A Power dissipation: 540W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.33Ω Mounting: SMD Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 190ns Technology: HiPerFET™; X-Class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFH20N85X | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO247-3; 190ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 20A Power dissipation: 540W Case: TO247-3 On-state resistance: 0.33Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 190ns Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXCY10M45S | IXYS |
![]() Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA Type of integrated circuit: driver Operating current: 2...100mA Power dissipation: 40W Kind of integrated circuit: current regulator Mounting: SMD Operating temperature: -55...150°C Case: TO252 Operating voltage: 450V DC |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
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FUO22-16N | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 30A Max. forward impulse current: 150A Electrical mounting: THT Max. forward voltage: 1.2V Case: ISOPLUS i4-pac™ x024a |
auf Bestellung 142 Stücke: Lieferzeit 14-21 Tag (e) |
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VBO22-16NO8 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 14A Max. forward impulse current: 380A Electrical mounting: THT Version: square Leads: connectors FASTON Case: FO-B Kind of package: bulk |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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VUO122-16NO7 | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 125A; Ifsm: 1kA Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 125A Max. forward impulse current: 1kA Electrical mounting: THT Version: module Max. forward voltage: 1.13V Leads: wire Ø 1.5mm Case: ECO-PAC 2 Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MCD162-08io1 | IXYS |
![]() ![]() Description: Module: diode-thyristor; 800V; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Case: Y4-M6 Kind of package: bulk Max. off-state voltage: 0.8kV Max. load current: 300A Max. forward voltage: 1.03V Load current: 181A Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 6kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.88V Type of semiconductor module: diode-thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MCD162-12io1 | IXYS |
![]() ![]() Description: Module: diode-thyristor; 1.2kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Case: Y4-M6 Kind of package: bulk Max. off-state voltage: 1.2kV Max. load current: 300A Max. forward voltage: 1.03V Load current: 181A Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 6kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.88V Type of semiconductor module: diode-thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MCD162-14io1 | IXYS |
![]() ![]() Description: Module: diode-thyristor; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Case: Y4-M6 Kind of package: bulk Max. off-state voltage: 1.4kV Max. load current: 300A Max. forward voltage: 1.03V Load current: 181A Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 6kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.88V Type of semiconductor module: diode-thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MD16200S-DKM2MM | IXYS |
![]() Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S Case: package S Max. off-state voltage: 1.6kV Max. load current: 310A Max. forward voltage: 1.5V Load current: 200A Semiconductor structure: common cathode; double Max. forward impulse current: 6.5kA Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IXDD604D2TR | IXYS |
![]() Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V Operating temperature: -40...125°C Case: DFN8 Supply voltage: 4.5...35V Turn-on time: 81ns Turn-off time: 79ns Output current: -4...4A Type of integrated circuit: driver Number of channels: 2 Kind of output: non-inverting Kind of package: reel; tape Kind of integrated circuit: gate driver; low-side Mounting: SMD |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDF604PI | IXYS |
![]() Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Operating temperature: -40...125°C Case: DIP8 Supply voltage: 4.5...35V Turn-on time: 81ns Turn-off time: 79ns Output current: -4...4A Type of integrated circuit: driver Number of channels: 2 Kind of output: inverting; non-inverting Kind of package: tube Kind of integrated circuit: gate driver; low-side Mounting: THT |
auf Bestellung 530 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDD604PI | IXYS |
![]() Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Operating temperature: -40...125°C Case: DIP8 Supply voltage: 4.5...35V Turn-on time: 81ns Turn-off time: 79ns Output current: -4...4A Type of integrated circuit: driver Number of channels: 2 Kind of output: non-inverting Kind of package: tube Kind of integrated circuit: gate driver; low-side Mounting: THT |
auf Bestellung 151 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDI604PI | IXYS |
![]() Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Operating temperature: -40...125°C Case: DIP8 Supply voltage: 4.5...35V Turn-on time: 81ns Turn-off time: 79ns Output current: -4...4A Type of integrated circuit: driver Number of channels: 2 Kind of output: inverting Kind of package: tube Kind of integrated circuit: gate driver; low-side Mounting: THT |
auf Bestellung 1020 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDI604SIA | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Operating temperature: -40...125°C Case: SO8 Supply voltage: 4.5...35V Turn-on time: 81ns Turn-off time: 79ns Output current: -4...4A Type of integrated circuit: driver Number of channels: 2 Kind of output: inverting Kind of package: tube Kind of integrated circuit: gate driver; low-side Mounting: SMD |
auf Bestellung 1064 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDD604SI | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V Operating temperature: -40...125°C Case: SO8-EP Supply voltage: 4.5...35V Turn-on time: 81ns Turn-off time: 79ns Output current: -4...4A Type of integrated circuit: driver Number of channels: 2 Kind of output: non-inverting Kind of package: tube Kind of integrated circuit: gate driver; low-side Mounting: SMD |
auf Bestellung 1103 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDF604SIA | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Operating temperature: -40...125°C Case: SO8 Supply voltage: 4.5...35V Turn-on time: 81ns Turn-off time: 79ns Output current: -4...4A Type of integrated circuit: driver Number of channels: 2 Kind of output: inverting; non-inverting Kind of package: tube Kind of integrated circuit: gate driver; low-side Mounting: SMD |
auf Bestellung 347 Stücke: Lieferzeit 14-21 Tag (e) |
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IX2127G | IXYS |
![]() Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: DIP8 Supply voltage: 9...12V Mounting: THT Operating temperature: -40...125°C Number of channels: 1 Kind of package: tube Voltage class: 600V Output current: -500...250mA |
auf Bestellung 290 Stücke: Lieferzeit 14-21 Tag (e) |
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IX2127N | IXYS |
![]() Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: SO8 Supply voltage: 9...12V Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Kind of package: tube Voltage class: 600V Output current: -500...250mA |
auf Bestellung 841 Stücke: Lieferzeit 14-21 Tag (e) |
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IXBOD1-12R | IXYS |
![]() Description: Thyristor: BOD x2; 1.25A; BOD; THT; bulk; 1.2kV Kind of package: bulk Breakover voltage: 1.2kV Type of thyristor: BOD x2 Mounting: THT Case: BOD Max. load current: 1.25A |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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IXBOD1-12RD | IXYS |
![]() Description: Thyristor: BOD x2; 0.2A; BOD; THT; bulk; 1.2kV Kind of package: bulk Features of semiconductor devices: version RD (internal diode) Breakover voltage: 1.2kV Type of thyristor: BOD x2 Mounting: THT Case: BOD Max. load current: 0.2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IXCP10M90S | IXYS |
![]() Description: IC: driver; current regulator; TO220AB; 900VDC; 40W; 2÷100mA Type of integrated circuit: driver Kind of integrated circuit: current regulator Case: TO220AB Mounting: THT Operating temperature: -55...150°C Operating voltage: 900V DC Power dissipation: 40W Operating current: 2...100mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXGX82N120A3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 580A Mounting: THT Gate charge: 340nC Kind of package: tube Turn-on time: 109ns Turn-off time: 1.59µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
MKE38P600LB |
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Hersteller: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 600V; 50A; SMPD; double series
Semiconductor structure: double series
Reverse recovery time: 660ns
Drain-source voltage: 600V
Drain current: 50A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 0.19µC
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SMPD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 600V; 50A; SMPD; double series
Semiconductor structure: double series
Reverse recovery time: 660ns
Drain-source voltage: 600V
Drain current: 50A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 0.19µC
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SMPD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMA40U1800GU |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A
Leads: flat pin
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
Max. off-state voltage: 1.8kV
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A
Leads: flat pin
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
Max. off-state voltage: 1.8kV
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.37 EUR |
7+ | 10.90 EUR |
CPC2330N |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
auf Bestellung 484 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.59 EUR |
32+ | 2.25 EUR |
34+ | 2.12 EUR |
CPC2330NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTP450P2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.86 EUR |
23+ | 3.19 EUR |
24+ | 3.02 EUR |
100+ | 2.90 EUR |
IXTA3N100D2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTA3N100D2HV |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC3909CTR |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89
Mounting: SMD
Drain-source voltage: 400V
Drain current: 0.3A
On-state resistance: 9Ω
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Case: SOT89
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89
Mounting: SMD
Drain-source voltage: 400V
Drain current: 0.3A
On-state resistance: 9Ω
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Case: SOT89
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VBO130-16NO7 |
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Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VBO130-08NO7 |
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Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VBO130-12NO7 |
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Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VBO130-18NO7 |
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Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.8kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.8kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCC44-16io1B |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Electrical mounting: screw
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.34V
Load current: 49A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Mechanical mounting: screw
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Electrical mounting: screw
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.34V
Load current: 49A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Mechanical mounting: screw
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MCD162-18io1 |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. load current: 300A
Max. forward voltage: 1.03V
Load current: 181A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Type of semiconductor module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. load current: 300A
Max. forward voltage: 1.03V
Load current: 181A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Type of semiconductor module: diode-thyristor
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 79.09 EUR |
6+ | 76.71 EUR |
IXFP30N25X3M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LBA710S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LBA710STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
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PD2401 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: THT
Operating temperature: -40...85°C
Case: DIP4
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: THT
Operating temperature: -40...85°C
Case: DIP4
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.22 EUR |
11+ | 6.51 EUR |
12+ | 6.16 EUR |
VVZB135-16IOXT |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Technology: X2PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXTP50N20P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.89 EUR |
22+ | 3.40 EUR |
23+ | 3.22 EUR |
IXTQ50N20P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.62 EUR |
19+ | 3.96 EUR |
20+ | 3.75 EUR |
IXTP50N25T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 354 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.48 EUR |
17+ | 4.30 EUR |
18+ | 4.08 EUR |
50+ | 3.90 EUR |
IXTP50N20PM |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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DFE240X600NA |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.2V
Load current: 120A x2
Semiconductor structure: double independent
Reverse recovery time: 35ns
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.2V
Load current: 120A x2
Semiconductor structure: double independent
Reverse recovery time: 35ns
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Type of semiconductor module: diode
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 40.57 EUR |
3+ | 40.55 EUR |
MMIX1T600N04T2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Case: SMPD
Reverse recovery time: 100ns
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 2kA
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Case: SMPD
Reverse recovery time: 100ns
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 2kA
Mounting: SMD
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 36.95 EUR |
3+ | 36.94 EUR |
20+ | 35.74 EUR |
IXTN600N04T2 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Semiconductor structure: single transistor
Reverse recovery time: 100ns
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.3mΩ
Power dissipation: 940W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 1.8kA
Type of semiconductor module: MOSFET transistor
Case: SOT227B
Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Semiconductor structure: single transistor
Reverse recovery time: 100ns
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.3mΩ
Power dissipation: 940W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 1.8kA
Type of semiconductor module: MOSFET transistor
Case: SOT227B
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTK600N04T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Reverse recovery time: 100ns
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 590nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Reverse recovery time: 100ns
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 590nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTA1N120P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Case: TO263
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Case: TO263
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTP1N120P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns
Case: TO220AB
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns
Case: TO220AB
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC3720CTR |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Case: SOT89
Drain-source voltage: 350V
Drain current: 0.13A
On-state resistance: 22Ω
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Case: SOT89
Drain-source voltage: 350V
Drain current: 0.13A
On-state resistance: 22Ω
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Mounting: SMD
auf Bestellung 567 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
103+ | 0.70 EUR |
182+ | 0.39 EUR |
199+ | 0.36 EUR |
260+ | 0.28 EUR |
274+ | 0.26 EUR |
IXFK220N15P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 220A; 1250W; TO264
Case: TO264
Drain-source voltage: 150V
Drain current: 220A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 162nC
Kind of channel: enhancement
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 220A; 1250W; TO264
Case: TO264
Drain-source voltage: 150V
Drain current: 220A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 162nC
Kind of channel: enhancement
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXDF602SIA |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.64 EUR |
50+ | 1.44 EUR |
76+ | 0.94 EUR |
81+ | 0.89 EUR |
IXDF602SIATR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTP270N04T4 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Reverse recovery time: 48ns
Drain-source voltage: 40V
Drain current: 270A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Reverse recovery time: 48ns
Drain-source voltage: 40V
Drain current: 270A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.33 EUR |
19+ | 3.90 EUR |
22+ | 3.27 EUR |
24+ | 3.09 EUR |
IXTH270N04T4 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Reverse recovery time: 48ns
Drain-source voltage: 40V
Drain current: 270A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Reverse recovery time: 48ns
Drain-source voltage: 40V
Drain current: 270A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.76 EUR |
IXTX110N20L2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
Technology: Linear L2™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
Technology: Linear L2™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFJ20N85X |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 9.5A; Idm: 50A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 9.5A
Power dissipation: 110W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Features of semiconductor devices: ultra junction x-class
Technology: HiPerFET™; X-Class
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 9.5A; Idm: 50A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 9.5A
Power dissipation: 110W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Features of semiconductor devices: ultra junction x-class
Technology: HiPerFET™; X-Class
Pulsed drain current: 50A
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.30 EUR |
IXFA20N85XHV |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 20A; 540W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Technology: HiPerFET™; X-Class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 20A; 540W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Technology: HiPerFET™; X-Class
Produkt ist nicht verfügbar
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IXFH20N85X |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO247-3; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO247-3; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXCY10M45S |
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Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Operating current: 2...100mA
Power dissipation: 40W
Kind of integrated circuit: current regulator
Mounting: SMD
Operating temperature: -55...150°C
Case: TO252
Operating voltage: 450V DC
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Operating current: 2...100mA
Power dissipation: 40W
Kind of integrated circuit: current regulator
Mounting: SMD
Operating temperature: -55...150°C
Case: TO252
Operating voltage: 450V DC
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.33 EUR |
31+ | 2.33 EUR |
33+ | 2.20 EUR |
FUO22-16N |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 19.10 EUR |
10+ | 18.78 EUR |
25+ | 18.36 EUR |
VBO22-16NO8 |
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Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 14A
Max. forward impulse current: 380A
Electrical mounting: THT
Version: square
Leads: connectors FASTON
Case: FO-B
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 14A
Max. forward impulse current: 380A
Electrical mounting: THT
Version: square
Leads: connectors FASTON
Case: FO-B
Kind of package: bulk
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 16.30 EUR |
6+ | 12.37 EUR |
50+ | 12.17 EUR |
VUO122-16NO7 |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 125A; Ifsm: 1kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 125A
Max. forward impulse current: 1kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.13V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 125A; Ifsm: 1kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 125A
Max. forward impulse current: 1kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.13V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCD162-08io1 |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 0.8kV
Max. load current: 300A
Max. forward voltage: 1.03V
Load current: 181A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Type of semiconductor module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 0.8kV
Max. load current: 300A
Max. forward voltage: 1.03V
Load current: 181A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MCD162-12io1 |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.2kV
Max. load current: 300A
Max. forward voltage: 1.03V
Load current: 181A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Type of semiconductor module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.2kV
Max. load current: 300A
Max. forward voltage: 1.03V
Load current: 181A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen
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MCD162-14io1 |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.4kV
Max. load current: 300A
Max. forward voltage: 1.03V
Load current: 181A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Type of semiconductor module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.4kV
Max. load current: 300A
Max. forward voltage: 1.03V
Load current: 181A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.88V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MD16200S-DKM2MM |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Case: package S
Max. off-state voltage: 1.6kV
Max. load current: 310A
Max. forward voltage: 1.5V
Load current: 200A
Semiconductor structure: common cathode; double
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Case: package S
Max. off-state voltage: 1.6kV
Max. load current: 310A
Max. forward voltage: 1.5V
Load current: 200A
Semiconductor structure: common cathode; double
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXDD604D2TR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: DFN8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: DFN8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.63 EUR |
31+ | 2.35 EUR |
49+ | 1.49 EUR |
51+ | 1.42 EUR |
IXDF604PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting; non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting; non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: THT
auf Bestellung 530 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 2.03 EUR |
39+ | 1.87 EUR |
53+ | 1.37 EUR |
55+ | 1.30 EUR |
500+ | 1.26 EUR |
IXDD604PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: THT
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.55 EUR |
32+ | 2.27 EUR |
48+ | 1.52 EUR |
50+ | 1.43 EUR |
IXDI604PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: THT
auf Bestellung 1020 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.65 EUR |
38+ | 1.89 EUR |
49+ | 1.49 EUR |
51+ | 1.42 EUR |
100+ | 1.36 EUR |
IXDI604SIA |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
auf Bestellung 1064 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.39 EUR |
35+ | 2.04 EUR |
49+ | 1.49 EUR |
51+ | 1.42 EUR |
100+ | 1.40 EUR |
500+ | 1.36 EUR |
IXDD604SI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: SO8-EP
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: SO8-EP
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
auf Bestellung 1103 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.59 EUR |
27+ | 2.73 EUR |
28+ | 2.59 EUR |
200+ | 2.49 EUR |
IXDF604SIA |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting; non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting; non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
auf Bestellung 347 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.39 EUR |
35+ | 2.04 EUR |
48+ | 1.52 EUR |
50+ | 1.43 EUR |
IX2127G |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: tube
Voltage class: 600V
Output current: -500...250mA
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: tube
Voltage class: 600V
Output current: -500...250mA
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
90+ | 0.80 EUR |
IX2127N |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Supply voltage: 9...12V
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: tube
Voltage class: 600V
Output current: -500...250mA
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Supply voltage: 9...12V
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: tube
Voltage class: 600V
Output current: -500...250mA
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
82+ | 0.87 EUR |
IXBOD1-12R |
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Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x2; 1.25A; BOD; THT; bulk; 1.2kV
Kind of package: bulk
Breakover voltage: 1.2kV
Type of thyristor: BOD x2
Mounting: THT
Case: BOD
Max. load current: 1.25A
Category: Thyristors - others
Description: Thyristor: BOD x2; 1.25A; BOD; THT; bulk; 1.2kV
Kind of package: bulk
Breakover voltage: 1.2kV
Type of thyristor: BOD x2
Mounting: THT
Case: BOD
Max. load current: 1.25A
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 87.19 EUR |
10+ | 85.73 EUR |
IXBOD1-12RD |
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Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x2; 0.2A; BOD; THT; bulk; 1.2kV
Kind of package: bulk
Features of semiconductor devices: version RD (internal diode)
Breakover voltage: 1.2kV
Type of thyristor: BOD x2
Mounting: THT
Case: BOD
Max. load current: 0.2A
Category: Thyristors - others
Description: Thyristor: BOD x2; 0.2A; BOD; THT; bulk; 1.2kV
Kind of package: bulk
Features of semiconductor devices: version RD (internal diode)
Breakover voltage: 1.2kV
Type of thyristor: BOD x2
Mounting: THT
Case: BOD
Max. load current: 0.2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXCP10M90S |
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Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXGX82N120A3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
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