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LCA120STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FA1940C7&compId=LCA120.pdf?ci_sign=c02f4fd184a2ca7999d27c10012f4019208f7a05 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXYN50N170CV1 IXYN50N170CV1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F3429480779820&compId=IXYN50N170CV1.pdf?ci_sign=61ed5f3699ed63ebaafb0c8b7374a82dab62642e Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 50A; SOT227B
Case: SOT227B
Max. off-state voltage: 1.7kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 485A
Power dissipation: 880W
Electrical mounting: screw
Mechanical mounting: screw
Technology: XPT™
Type of semiconductor module: IGBT
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IXFX250N10P IXFX250N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB36DB3D55820&compId=IXFK(X)250N10P.pdf?ci_sign=8ea7e81bf2d9e3c41b4632496dce0444a2a01043 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 250A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhancement
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IXFA22N65X2 IXFA22N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7E33E399F98BF&compId=IXF_22N65X2.pdf?ci_sign=0c8f69f0a301813161ad4a66663b73b0511fd05a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Reverse recovery time: 145ns
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LCB110 LCB110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
auf Bestellung 200 Stücke:
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23+3.25 EUR
27+2.73 EUR
28+2.59 EUR
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CPC1333GR CPC1333GR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003FE0C7&compId=CPC1333.pdf?ci_sign=dd21761c011cbe67e43ba1e240dd7b0022006e20 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP4
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 3ms
Body dimensions: 4.57x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 5kV
Max. operating current: 0.13A
Type of relay: solid state
auf Bestellung 231 Stücke:
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29+2.52 EUR
39+1.84 EUR
41+1.74 EUR
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IXBX25N250 IXBX25N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB006B7F8953820&compId=IXBX25N250.pdf?ci_sign=17472d2e253c34c3d2eb9e963823e77b773ef7aa Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 25A; 300W; PLUS247™
Mounting: THT
Case: PLUS247™
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 103nC
Technology: BiMOSFET™
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 180A
Turn-on time: 694ns
Turn-off time: 650ns
Type of transistor: IGBT
Power dissipation: 300W
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IXDI609CI IXDI609CI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 796 Stücke:
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13+5.82 EUR
24+3.07 EUR
25+2.9 EUR
100+2.79 EUR
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IXDI609YI IXDI609YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 272 Stücke:
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13+5.82 EUR
24+3.07 EUR
25+2.9 EUR
100+2.8 EUR
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IXDI609SIA IXDI609SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 895 Stücke:
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24+3 EUR
36+2.02 EUR
50+1.44 EUR
53+1.37 EUR
300+1.33 EUR
500+1.32 EUR
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IXDI609SI IXDI609SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDI609PI IXDI609PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDI609SIATR IXDI609SIATR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDI609SITR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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MCD72-08io8B MCD72-08io8B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFF9E05F5C880C4&compId=MCD72-08io8B.pdf?ci_sign=866106dbdcc74352da58c97a5f01fcb2bd1c4ad7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 85A; TO240AA; Ufmax: 1.34V; bulk
Max. off-state voltage: 0.8kV
Load current: 85A
Semiconductor structure: double series
Case: TO240AA
Max. forward voltage: 1.34V
Max. load current: 133A
Max. forward impulse current: 1.7kA
Kind of package: bulk
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Type of semiconductor module: diode-thyristor
auf Bestellung 27 Stücke:
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3+32.86 EUR
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IXTH60N20L2 IXTH60N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Reverse recovery time: 330ns
Drain-source voltage: 200V
Drain current: 60A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 540W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 255nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
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IXTH10P60 IXTH10P60 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E678466B5B8BF&compId=IXT_10P60.pdf?ci_sign=1f66270f133ab710d995425d2a54122a9b741bbc Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Reverse recovery time: 0.5µs
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 135nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
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IXTH26N60P IXTH26N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D522F688F8B820&compId=IXTH(Q%2CT%2CV)26N60P_S.pdf?ci_sign=00e2f7b4fe95c5c6f2d8b57fcefc771d8841088e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Reverse recovery time: 0.5µs
Drain-source voltage: 600V
Drain current: 26A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 72nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
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IXTH75N10L2 IXTH75N10L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993960D1A4DD498BF&compId=IXT_75N10L2.pdf?ci_sign=14d46f1640fe8dff3fd9c2e86627011d0edde846 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
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DFE60C600AHB DFE60C600AHB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; TO247-3
Max. off-state voltage: 0.6kV
Load current: 60A
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO247-3
auf Bestellung 5 Stücke:
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5+14.3 EUR
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IXYN100N120C3H1 IXYN100N120C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F3307AD85A7820&compId=IXYN100N120C3H1.pdf?ci_sign=431948e75f5382cc17397fa059ef249bc2666283 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 62A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Technology: GenX3™; XPT™
Mechanical mounting: screw
Power dissipation: 690W
auf Bestellung 2 Stücke:
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2+56.07 EUR
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VVZ40-16IO1 VVZ40-16IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C86498A6D8938BF&compId=VVZ40-16io1.pdf?ci_sign=5f385510a8a80d547d37887567223980cb9e22fb Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 45A; module
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 45A
Max. forward impulse current: 0.32kA
Electrical mounting: FASTON connectors
Leads: connectors
Case: V1-B-Pack
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.52V
Gate current: 65/80mA
Leads dimensions: 2x0.5mm
auf Bestellung 15 Stücke:
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2+46.4 EUR
10+44.62 EUR
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IXXH75N60B3D1 IXXH75N60B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB15D1C4927820&compId=IXXH75N60B3D1.pdf?ci_sign=bdc739111de6b9c22e1ccea3f1e37d6575acee96 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 108ns
Turn-off time: 315ns
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IXBOD1-38R IXBOD1-38R IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4 Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.8kV
Breakover voltage: 3.8kV
Type of thyristor: BOD x4
Mounting: THT
Case: BOD
Max. load current: 0.7A
Kind of package: bulk
auf Bestellung 15 Stücke:
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1+116 EUR
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IXBOD1-36R IXBOD1-36R IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4 Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.6kV
Breakover voltage: 3.6kV
Type of thyristor: BOD x4
Mounting: THT
Case: BOD
Max. load current: 0.7A
Kind of package: bulk
auf Bestellung 20 Stücke:
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1+116.29 EUR
20+114.39 EUR
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MCD224-20io1 MCD224-20io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B0FC98D8B704A0C4&compId=MCD224-20IO1.pdf?ci_sign=899655aeef6d8c99ec2904b5e307019275cbfa56 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Max. off-state voltage: 2kV
Max. load current: 390A
Max. forward voltage: 1.03V
Load current: 250A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 8kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.72V
Type of semiconductor module: diode-thyristor
Case: Y1-CU
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MCD224-22io1 MCD224-22io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFC9B927D1F20C4&compId=MCD224-22io1.pdf?ci_sign=f113a003fde4f0c6f05d29fa5569a17c34bac13c Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Max. off-state voltage: 2.2kV
Max. load current: 390A
Max. forward voltage: 1.03V
Load current: 250A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 8kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.72V
Type of semiconductor module: diode-thyristor
Case: Y1-CU
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IXFK66N85X IXFK66N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D45EA035953820&compId=IXFK(X)66N85X.pdf?ci_sign=e7c14aa32d84194501b260d23630935b53873b4a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 66A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 250ns
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DSP8-08A DSP8-08A IXYS Littelfuse-Power-Semiconductors-DSP8-08A-Datasheet?assetguid=cb034645-c550-4ca3-9793-0552505757de Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 120A; TO220AB; 100W
Max. forward voltage: 1.16V
Load current: 8A
Semiconductor structure: double series
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Type of diode: rectifying
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.8kV
auf Bestellung 261 Stücke:
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35+2.06 EUR
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LDA203S LDA203S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC2F747AE01EC&compId=LDA203.pdf?ci_sign=e8c00693dacd4003e8fc035e9efcac42f0fb87f6 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
auf Bestellung 205 Stücke:
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52+1.39 EUR
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88+0.82 EUR
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IXFR36N60P IXFR36N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C69820&compId=IXFR36N60P.pdf?ci_sign=1fc4fe4794b8f3159b3dfb104d4d3e4c0fa4fdea Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXDN630CI IXDN630CI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
auf Bestellung 144 Stücke:
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8+8.97 EUR
9+8.47 EUR
25+8.34 EUR
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IXDI602SIA IXDI602SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 93ns
Turn-on time: 93ns
Kind of output: inverting
auf Bestellung 1000 Stücke:
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28+2.57 EUR
44+1.63 EUR
68+1.06 EUR
72+1 EUR
300+0.97 EUR
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IXDI614PI IXDI614PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 130ns
Turn-on time: 140ns
Kind of output: inverting
auf Bestellung 529 Stücke:
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32+2.25 EUR
34+2.13 EUR
250+2.04 EUR
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IXDN630MYI IXDN630MYI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 9...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
auf Bestellung 240 Stücke:
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7+10.3 EUR
9+8.14 EUR
10+8.05 EUR
25+7.82 EUR
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IXTP36P15P IXTP36P15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA025489909D8BF&compId=IXT_36P15P.pdf?ci_sign=43e84b0c7625b0bc77fce7d732308fb491cdfed2 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
auf Bestellung 220 Stücke:
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9+8.68 EUR
14+5.32 EUR
15+5.02 EUR
100+4.83 EUR
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IXTP62N15P IXTP62N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CB5157625E27&compId=IXTA62N15P-DTE.pdf?ci_sign=ce5c2df138c0e64408a93ae777b5bf73ab6a7919 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 267 Stücke:
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13+5.53 EUR
21+3.53 EUR
22+3.35 EUR
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IXTR36P15P IXTR36P15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA02959DD0F78BF&compId=IXTR36P15P.pdf?ci_sign=7d9e4cf04ef12fee99949599ef3d6caa0088dafd Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -22A; 150W; 150ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -22A
Power dissipation: 150W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 52 Stücke:
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11+7.14 EUR
12+6.31 EUR
13+5.53 EUR
14+5.23 EUR
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IXTA15P15T IXTA15P15T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0315E91ECF8BF&compId=IXT_15P15T.pdf?ci_sign=89c9e7e0f50fcdf0bdf9b8cab3248220932eecac Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
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IXTY15P15T IXTY15P15T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0315E91ECF8BF&compId=IXT_15P15T.pdf?ci_sign=89c9e7e0f50fcdf0bdf9b8cab3248220932eecac Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
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IXTQ36P15P IXTQ36P15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA025489909D8BF&compId=IXT_36P15P.pdf?ci_sign=43e84b0c7625b0bc77fce7d732308fb491cdfed2 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
Produkt ist nicht verfügbar
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IXTQ62N15P IXTQ62N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CB5157625E27&compId=IXTA62N15P-DTE.pdf?ci_sign=ce5c2df138c0e64408a93ae777b5bf73ab6a7919 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTA62N15P IXTA62N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CB5157625E27&compId=IXTA62N15P-DTE.pdf?ci_sign=ce5c2df138c0e64408a93ae777b5bf73ab6a7919 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTH36P15P IXTH36P15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA025489909D8BF&compId=IXT_36P15P.pdf?ci_sign=43e84b0c7625b0bc77fce7d732308fb491cdfed2 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
Produkt ist nicht verfügbar
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IXTQ96N15P IXTQ96N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90EC0ECEF9BE27&compId=IXTQ96N15P-DTE.pdf?ci_sign=9a803a13d2a5038b9b223d3543d625d7c814ed76 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTR62N15P IXTR62N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F145B820&compId=IXTR62N15P.pdf?ci_sign=c9a9746ec789fb1dc7bc0d029a6c0b1e13dfca75 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 150W; ISOPLUS247™; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 150W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXTT96N15P IXTT96N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90EC0ECEF9BE27&compId=IXTQ96N15P-DTE.pdf?ci_sign=9a803a13d2a5038b9b223d3543d625d7c814ed76 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTP3N100D2 IXTP3N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBD9B42C73B820&compId=IXTA(P)3N100D2.pdf?ci_sign=c245ce0cffe79380fadde6d25a375768a49f0754 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.06 EUR
26+2.76 EUR
28+2.62 EUR
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IXTP08N100P IXTP08N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D9641FC3F820&compId=IXTA(P%2CY)08N100P.pdf?ci_sign=401fa2ad4a14adfb35f84e1f4d1d7ff0a0c5450a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 20Ω
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.6 EUR
31+2.36 EUR
39+1.86 EUR
41+1.76 EUR
250+1.73 EUR
Mindestbestellmenge: 28
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IXTP6N100D2 IXTP6N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D45948322AD820&compId=IXTA(H%2CP)6N100D2.pdf?ci_sign=ae2f4eab8381be464d1f510c96b6fa260d11e708 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.21 EUR
9+8.28 EUR
10+7.84 EUR
50+7.71 EUR
Mindestbestellmenge: 7
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IXTY1R6N100D2 IXTY1R6N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 100W
Case: TO252
Mounting: SMD
Kind of package: tube
Reverse recovery time: 11ns
Drain-source voltage: 1kV
Drain current: 1.6A
On-state resistance: 10Ω
Gate charge: 645nC
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 317 Stücke:
Lieferzeit 14-21 Tag (e)
18+4 EUR
20+3.6 EUR
25+2.86 EUR
27+2.7 EUR
Mindestbestellmenge: 18
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IXFK26N100P IXFK26N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED0210783C38BF&compId=IXFK26N100P_IXFX26N100P.pdf?ci_sign=e3bbcbcc0f83667d3f1a627314a9d5c5be08eed7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO264
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 26A
On-state resistance: 390mΩ
auf Bestellung 1 Stücke:
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1+71.5 EUR
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MD16110A-DKM2MM IXYS littelfuse_power_semiconductor_rectifier_module_circuit_package_a_datasheet.pdf?assetguid=7ed5c66f-3580-4b5e-91ee-69f455430ce8 Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 110A; package A
Case: package A
Max. off-state voltage: 1.6kV
Max. load current: 170A
Max. forward voltage: 1.6V
Load current: 110A
Semiconductor structure: common cathode; double
Max. forward impulse current: 2.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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IXBOD1-21R IXBOD1-21R IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4 Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; bulk; 2.1kV
Kind of package: bulk
Breakover voltage: 2.1kV
Type of thyristor: BOD x3
Mounting: THT
Case: BOD
Max. load current: 0.9A
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
1+88.93 EUR
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DHG40C600HB DHG40C600HB IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA52EF03A6D4143&compId=DHG40C600HB.pdf?ci_sign=96d78342f11e3ccd059a919ee824b4f145a90d11 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20Ax2; tube; Ifsm: 150A; TO247-3; 140W
Load current: 20A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Max. forward impulse current: 150A
Power dissipation: 140W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.19V
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.51 EUR
11+6.51 EUR
Mindestbestellmenge: 9
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IXTT10N100D2 IXTT10N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3125E13B47820&compId=IXTH(T)10N100D2.pdf?ci_sign=fea7a32eed96d4aca8c20c0d37bcc4194c5ed7a0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO268
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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IXTH10N100D2 IXTH10N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3125E13B47820&compId=IXTH(T)10N100D2.pdf?ci_sign=fea7a32eed96d4aca8c20c0d37bcc4194c5ed7a0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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IXTT10N100D IXTT10N100D IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1487820&compId=IXTH(T)10N100D.pdf?ci_sign=3be67cb3e02e1fcc22bdf1490b0df9caffc7fd50 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 850ns
Produkt ist nicht verfügbar
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IXTH110N10L2 IXTH110N10L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A32F17C5AFB820&compId=IXTH(T)110N10L2.pdf?ci_sign=77ea8838b7a67aed409c2ff62bff94f2ca25fbfe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 230ns
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXTT110N10L2 IXTT110N10L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A32F17C5AFB820&compId=IXTH(T)110N10L2.pdf?ci_sign=77ea8838b7a67aed409c2ff62bff94f2ca25fbfe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
Produkt ist nicht verfügbar
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LCA120STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FA1940C7&compId=LCA120.pdf?ci_sign=c02f4fd184a2ca7999d27c10012f4019208f7a05
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXYN50N170CV1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F3429480779820&compId=IXYN50N170CV1.pdf?ci_sign=61ed5f3699ed63ebaafb0c8b7374a82dab62642e
IXYN50N170CV1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 50A; SOT227B
Case: SOT227B
Max. off-state voltage: 1.7kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 485A
Power dissipation: 880W
Electrical mounting: screw
Mechanical mounting: screw
Technology: XPT™
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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IXFX250N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB36DB3D55820&compId=IXFK(X)250N10P.pdf?ci_sign=8ea7e81bf2d9e3c41b4632496dce0444a2a01043
IXFX250N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 250A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFA22N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7E33E399F98BF&compId=IXF_22N65X2.pdf?ci_sign=0c8f69f0a301813161ad4a66663b73b0511fd05a
IXFA22N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Reverse recovery time: 145ns
Produkt ist nicht verfügbar
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LCB110 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c
LCB110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.25 EUR
27+2.73 EUR
28+2.59 EUR
Mindestbestellmenge: 23
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CPC1333GR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003FE0C7&compId=CPC1333.pdf?ci_sign=dd21761c011cbe67e43ba1e240dd7b0022006e20
CPC1333GR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP4
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 3ms
Body dimensions: 4.57x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 5kV
Max. operating current: 0.13A
Type of relay: solid state
auf Bestellung 231 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.52 EUR
39+1.84 EUR
41+1.74 EUR
Mindestbestellmenge: 29
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IXBX25N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB006B7F8953820&compId=IXBX25N250.pdf?ci_sign=17472d2e253c34c3d2eb9e963823e77b773ef7aa
IXBX25N250
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 25A; 300W; PLUS247™
Mounting: THT
Case: PLUS247™
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 103nC
Technology: BiMOSFET™
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 180A
Turn-on time: 694ns
Turn-off time: 650ns
Type of transistor: IGBT
Power dissipation: 300W
Produkt ist nicht verfügbar
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IXDI609CI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDI609CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 796 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.82 EUR
24+3.07 EUR
25+2.9 EUR
100+2.79 EUR
Mindestbestellmenge: 13
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IXDI609YI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDI609YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 272 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.82 EUR
24+3.07 EUR
25+2.9 EUR
100+2.8 EUR
Mindestbestellmenge: 13
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IXDI609SIA pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDI609SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 895 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3 EUR
36+2.02 EUR
50+1.44 EUR
53+1.37 EUR
300+1.33 EUR
500+1.32 EUR
Mindestbestellmenge: 24
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IXDI609SI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDI609SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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IXDI609PI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDI609PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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IXDI609SIATR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
IXDI609SIATR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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IXDI609SITR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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MCD72-08io8B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFF9E05F5C880C4&compId=MCD72-08io8B.pdf?ci_sign=866106dbdcc74352da58c97a5f01fcb2bd1c4ad7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCD72-08io8B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 85A; TO240AA; Ufmax: 1.34V; bulk
Max. off-state voltage: 0.8kV
Load current: 85A
Semiconductor structure: double series
Case: TO240AA
Max. forward voltage: 1.34V
Max. load current: 133A
Max. forward impulse current: 1.7kA
Kind of package: bulk
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Type of semiconductor module: diode-thyristor
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.86 EUR
Mindestbestellmenge: 3
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IXTH60N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442
IXTH60N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Reverse recovery time: 330ns
Drain-source voltage: 200V
Drain current: 60A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 540W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 255nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
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IXTH10P60 pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E678466B5B8BF&compId=IXT_10P60.pdf?ci_sign=1f66270f133ab710d995425d2a54122a9b741bbc
IXTH10P60
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Reverse recovery time: 0.5µs
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 135nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
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IXTH26N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D522F688F8B820&compId=IXTH(Q%2CT%2CV)26N60P_S.pdf?ci_sign=00e2f7b4fe95c5c6f2d8b57fcefc771d8841088e
IXTH26N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Reverse recovery time: 0.5µs
Drain-source voltage: 600V
Drain current: 26A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 72nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
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IXTH75N10L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993960D1A4DD498BF&compId=IXT_75N10L2.pdf?ci_sign=14d46f1640fe8dff3fd9c2e86627011d0edde846
IXTH75N10L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
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DFE60C600AHB
DFE60C600AHB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; TO247-3
Max. off-state voltage: 0.6kV
Load current: 60A
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO247-3
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
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IXYN100N120C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F3307AD85A7820&compId=IXYN100N120C3H1.pdf?ci_sign=431948e75f5382cc17397fa059ef249bc2666283
IXYN100N120C3H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 62A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Technology: GenX3™; XPT™
Mechanical mounting: screw
Power dissipation: 690W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+56.07 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
VVZ40-16IO1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C86498A6D8938BF&compId=VVZ40-16io1.pdf?ci_sign=5f385510a8a80d547d37887567223980cb9e22fb
VVZ40-16IO1
Hersteller: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 45A; module
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 45A
Max. forward impulse current: 0.32kA
Electrical mounting: FASTON connectors
Leads: connectors
Case: V1-B-Pack
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.52V
Gate current: 65/80mA
Leads dimensions: 2x0.5mm
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+46.4 EUR
10+44.62 EUR
Mindestbestellmenge: 2
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IXXH75N60B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB15D1C4927820&compId=IXXH75N60B3D1.pdf?ci_sign=bdc739111de6b9c22e1ccea3f1e37d6575acee96
IXXH75N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 108ns
Turn-off time: 315ns
Produkt ist nicht verfügbar
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IXBOD1-38R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4
IXBOD1-38R
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.8kV
Breakover voltage: 3.8kV
Type of thyristor: BOD x4
Mounting: THT
Case: BOD
Max. load current: 0.7A
Kind of package: bulk
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+116 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXBOD1-36R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4
IXBOD1-36R
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.6kV
Breakover voltage: 3.6kV
Type of thyristor: BOD x4
Mounting: THT
Case: BOD
Max. load current: 0.7A
Kind of package: bulk
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+116.29 EUR
20+114.39 EUR
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MCD224-20io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B0FC98D8B704A0C4&compId=MCD224-20IO1.pdf?ci_sign=899655aeef6d8c99ec2904b5e307019275cbfa56
MCD224-20io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Max. off-state voltage: 2kV
Max. load current: 390A
Max. forward voltage: 1.03V
Load current: 250A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 8kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.72V
Type of semiconductor module: diode-thyristor
Case: Y1-CU
Produkt ist nicht verfügbar
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MCD224-22io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFC9B927D1F20C4&compId=MCD224-22io1.pdf?ci_sign=f113a003fde4f0c6f05d29fa5569a17c34bac13c
MCD224-22io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Max. off-state voltage: 2.2kV
Max. load current: 390A
Max. forward voltage: 1.03V
Load current: 250A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 8kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.72V
Type of semiconductor module: diode-thyristor
Case: Y1-CU
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK66N85X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D45EA035953820&compId=IXFK(X)66N85X.pdf?ci_sign=e7c14aa32d84194501b260d23630935b53873b4a
IXFK66N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 66A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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DSP8-08A Littelfuse-Power-Semiconductors-DSP8-08A-Datasheet?assetguid=cb034645-c550-4ca3-9793-0552505757de
DSP8-08A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 120A; TO220AB; 100W
Max. forward voltage: 1.16V
Load current: 8A
Semiconductor structure: double series
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Type of diode: rectifying
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.8kV
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.29 EUR
35+2.06 EUR
37+1.96 EUR
Mindestbestellmenge: 22
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LDA203S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC2F747AE01EC&compId=LDA203.pdf?ci_sign=e8c00693dacd4003e8fc035e9efcac42f0fb87f6
LDA203S
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
52+1.39 EUR
84+0.86 EUR
88+0.82 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
IXFR36N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C69820&compId=IXFR36N60P.pdf?ci_sign=1fc4fe4794b8f3159b3dfb104d4d3e4c0fa4fdea
IXFR36N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXDN630CI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDN630CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.77 EUR
8+8.97 EUR
9+8.47 EUR
25+8.34 EUR
Mindestbestellmenge: 7
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IXDI602SIA pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDI602SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 93ns
Turn-on time: 93ns
Kind of output: inverting
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
44+1.63 EUR
68+1.06 EUR
72+1 EUR
300+0.97 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IXDI614PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDI614PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 130ns
Turn-on time: 140ns
Kind of output: inverting
auf Bestellung 529 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.28 EUR
32+2.25 EUR
34+2.13 EUR
250+2.04 EUR
Mindestbestellmenge: 17
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IXDN630MYI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDN630MYI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 9...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.3 EUR
9+8.14 EUR
10+8.05 EUR
25+7.82 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTP36P15P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA025489909D8BF&compId=IXT_36P15P.pdf?ci_sign=43e84b0c7625b0bc77fce7d732308fb491cdfed2
IXTP36P15P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.68 EUR
14+5.32 EUR
15+5.02 EUR
100+4.83 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXTP62N15P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CB5157625E27&compId=IXTA62N15P-DTE.pdf?ci_sign=ce5c2df138c0e64408a93ae777b5bf73ab6a7919
IXTP62N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.53 EUR
21+3.53 EUR
22+3.35 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXTR36P15P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA02959DD0F78BF&compId=IXTR36P15P.pdf?ci_sign=7d9e4cf04ef12fee99949599ef3d6caa0088dafd
IXTR36P15P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -22A; 150W; 150ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -22A
Power dissipation: 150W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.14 EUR
12+6.31 EUR
13+5.53 EUR
14+5.23 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXTA15P15T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0315E91ECF8BF&compId=IXT_15P15T.pdf?ci_sign=89c9e7e0f50fcdf0bdf9b8cab3248220932eecac
IXTA15P15T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTY15P15T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0315E91ECF8BF&compId=IXT_15P15T.pdf?ci_sign=89c9e7e0f50fcdf0bdf9b8cab3248220932eecac
IXTY15P15T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
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IXTQ36P15P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA025489909D8BF&compId=IXT_36P15P.pdf?ci_sign=43e84b0c7625b0bc77fce7d732308fb491cdfed2
IXTQ36P15P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ62N15P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CB5157625E27&compId=IXTA62N15P-DTE.pdf?ci_sign=ce5c2df138c0e64408a93ae777b5bf73ab6a7919
IXTQ62N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA62N15P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CB5157625E27&compId=IXTA62N15P-DTE.pdf?ci_sign=ce5c2df138c0e64408a93ae777b5bf73ab6a7919
IXTA62N15P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH36P15P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA025489909D8BF&compId=IXT_36P15P.pdf?ci_sign=43e84b0c7625b0bc77fce7d732308fb491cdfed2
IXTH36P15P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ96N15P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90EC0ECEF9BE27&compId=IXTQ96N15P-DTE.pdf?ci_sign=9a803a13d2a5038b9b223d3543d625d7c814ed76
IXTQ96N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTR62N15P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F145B820&compId=IXTR62N15P.pdf?ci_sign=c9a9746ec789fb1dc7bc0d029a6c0b1e13dfca75
IXTR62N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 150W; ISOPLUS247™; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 150W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTT96N15P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90EC0ECEF9BE27&compId=IXTQ96N15P-DTE.pdf?ci_sign=9a803a13d2a5038b9b223d3543d625d7c814ed76
IXTT96N15P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTP3N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBD9B42C73B820&compId=IXTA(P)3N100D2.pdf?ci_sign=c245ce0cffe79380fadde6d25a375768a49f0754
IXTP3N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.06 EUR
26+2.76 EUR
28+2.62 EUR
Mindestbestellmenge: 15
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IXTP08N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D9641FC3F820&compId=IXTA(P%2CY)08N100P.pdf?ci_sign=401fa2ad4a14adfb35f84e1f4d1d7ff0a0c5450a
IXTP08N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 20Ω
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.6 EUR
31+2.36 EUR
39+1.86 EUR
41+1.76 EUR
250+1.73 EUR
Mindestbestellmenge: 28
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IXTP6N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D45948322AD820&compId=IXTA(H%2CP)6N100D2.pdf?ci_sign=ae2f4eab8381be464d1f510c96b6fa260d11e708
IXTP6N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.21 EUR
9+8.28 EUR
10+7.84 EUR
50+7.71 EUR
Mindestbestellmenge: 7
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IXTY1R6N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be
IXTY1R6N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 100W
Case: TO252
Mounting: SMD
Kind of package: tube
Reverse recovery time: 11ns
Drain-source voltage: 1kV
Drain current: 1.6A
On-state resistance: 10Ω
Gate charge: 645nC
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 317 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4 EUR
20+3.6 EUR
25+2.86 EUR
27+2.7 EUR
Mindestbestellmenge: 18
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IXFK26N100P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED0210783C38BF&compId=IXFK26N100P_IXFX26N100P.pdf?ci_sign=e3bbcbcc0f83667d3f1a627314a9d5c5be08eed7
IXFK26N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO264
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 26A
On-state resistance: 390mΩ
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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MD16110A-DKM2MM littelfuse_power_semiconductor_rectifier_module_circuit_package_a_datasheet.pdf?assetguid=7ed5c66f-3580-4b5e-91ee-69f455430ce8
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 110A; package A
Case: package A
Max. off-state voltage: 1.6kV
Max. load current: 170A
Max. forward voltage: 1.6V
Load current: 110A
Semiconductor structure: common cathode; double
Max. forward impulse current: 2.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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IXBOD1-21R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4
IXBOD1-21R
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; bulk; 2.1kV
Kind of package: bulk
Breakover voltage: 2.1kV
Type of thyristor: BOD x3
Mounting: THT
Case: BOD
Max. load current: 0.9A
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+88.93 EUR
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DHG40C600HB pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA52EF03A6D4143&compId=DHG40C600HB.pdf?ci_sign=96d78342f11e3ccd059a919ee824b4f145a90d11
DHG40C600HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20Ax2; tube; Ifsm: 150A; TO247-3; 140W
Load current: 20A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Max. forward impulse current: 150A
Power dissipation: 140W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.19V
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.51 EUR
11+6.51 EUR
Mindestbestellmenge: 9
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IXTT10N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3125E13B47820&compId=IXTH(T)10N100D2.pdf?ci_sign=fea7a32eed96d4aca8c20c0d37bcc4194c5ed7a0
IXTT10N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO268
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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IXTH10N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3125E13B47820&compId=IXTH(T)10N100D2.pdf?ci_sign=fea7a32eed96d4aca8c20c0d37bcc4194c5ed7a0
IXTH10N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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IXTT10N100D pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1487820&compId=IXTH(T)10N100D.pdf?ci_sign=3be67cb3e02e1fcc22bdf1490b0df9caffc7fd50
IXTT10N100D
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 850ns
Produkt ist nicht verfügbar
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IXTH110N10L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A32F17C5AFB820&compId=IXTH(T)110N10L2.pdf?ci_sign=77ea8838b7a67aed409c2ff62bff94f2ca25fbfe
IXTH110N10L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 230ns
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXTT110N10L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A32F17C5AFB820&compId=IXTH(T)110N10L2.pdf?ci_sign=77ea8838b7a67aed409c2ff62bff94f2ca25fbfe
IXTT110N10L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
Produkt ist nicht verfügbar
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