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IXDI604SI IXDI604SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXDI604SIATR IXDI604SIATR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXDI604SITR IXYS IXD_604.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXTH24N50L IXTH24N50L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91825820&compId=IXTH24N50L.pdf?ci_sign=65ce4971a8a2ba17892d822e535deeccc62d7f59 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTA300N04T2 IXTA300N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC479D53541820&compId=IXTA(P)300N04T2.pdf?ci_sign=b651044253ab618ad040cfd9d99a038916dc36fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO263; 53ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO263
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 53ns
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MDA72-08N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Diode modules
Description: Module: diode; double,common anode; 800V; If: 113Ax2; TO240AA
Case: TO240AA
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.6V
Max. off-state voltage: 0.8kV
Max. forward impulse current: 1.54kA
Load current: 113A x2
Semiconductor structure: common anode; double
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IXGH32N170 IXGH32N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF680363E99820&compId=IXGH(t)32N170.pdf?ci_sign=9963563482ba752aee4d73fdf7543cee510e34e6 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
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IXGH32N170A IXGH32N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF6B9E68B0F820&compId=IXGH(t)32N170a.pdf?ci_sign=20f3ac78b03e514554c84896e87e65060d55b472 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
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IXGH6N170 IXGH6N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A99DD112ACB8BF&compId=IXG_6N170.pdf?ci_sign=da939209e45ad284a3aacd5ea8533deede4f01af Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 0.6µs
Features of semiconductor devices: high voltage
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IXGH16N170 IXGH16N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAB99F1D44C151BF&compId=IXGH16N170-DTE.pdf?ci_sign=03a18b66e5d35198e9e236f78cf7b52f7cc4d616 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
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IXGH16N170A IXGH16N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
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IXGH6N170A IXGH6N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE62EB13C77820&compId=IXGh(T)6N170A.pdf?ci_sign=e3be7b7321a119c55baa6fb6dbef9aed2b2b65e8 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 14A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
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IXGH10N170 IXGH10N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAED5175596B820&compId=IXGH(t)10N170.pdf?ci_sign=3b7d3b6c182f8b0f27b026b278621c2bcff2c55b Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Technology: NPT
Mounting: THT
Kind of package: tube
Gate charge: 32nC
Turn-on time: 0.3µs
Turn-off time: 630ns
Collector current: 10A
Pulsed collector current: 70A
Gate-emitter voltage: ±20V
Power dissipation: 110W
Collector-emitter voltage: 1.7kV
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
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MKE38P600LB IXYS SMPD%20MOSFET%20and%20IGBTs_Product%20Brief_01.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 600V; 50A; SMPD; double series
Mounting: SMD
Technology: CoolMOS™
Semiconductor structure: double series
Kind of channel: enhancement
Case: SMPD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 0.19µC
Reverse recovery time: 660ns
On-state resistance: 45mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 600V
Produkt ist nicht verfügbar
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IXTY1R6N100D2 IXTY1R6N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Mounting: SMD
Case: TO252
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
auf Bestellung 33 Stücke:
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14+5.23 EUR
17+4.22 EUR
25+2.87 EUR
27+2.72 EUR
Mindestbestellmenge: 14
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IXTP1R6N100D2 IXTP1R6N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
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IXTA1R6N100D2 IXTA1R6N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
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IXTA1R6N100D2HV IXTA1R6N100D2HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A9E51B522E58BF&compId=IXTA1R6N100D2HV.pdf?ci_sign=55d26c1e82b4e332d5c0e06370e2b4aeba32cd94 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 970ns
Gate charge: 27nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: Polar™
Produkt ist nicht verfügbar
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IXTP130N10T IXTP130N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F130D820&compId=IXTA(P)130N10T.pdf?ci_sign=2932da386061339a6cff57dbeaf4458030129d04 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 67ns
Features of semiconductor devices: thrench gate power mosfet
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VUO36-16NO8 VUO36-16NO8 IXYS pVersion=0046&contRep=ZT&docId=E29209FA28E699F19A99005056AB752F&compId=VUO36.pdf?ci_sign=792581ee186cb851d5a743fcb3669bc2c4c9bd6d Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 27A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: square
Max. forward voltage: 1.05V
Leads: connectors FASTON
Case: FO-B
Leads dimensions: 6.3x0.8mm
auf Bestellung 82 Stücke:
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4+18.88 EUR
5+14.56 EUR
6+13.76 EUR
20+13.2 EUR
Mindestbestellmenge: 4
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VUO36-18NO8 VUO36-18NO8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880DD193C42A0C4&compId=VUO36-18NO8.pdf?ci_sign=54b1863c4b23187d629043c5b9c5b16b1507c6e6 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 27A; Ifsm: 550A
Case: FO-B
Electrical mounting: THT
Type of bridge rectifier: three-phase
Leads dimensions: 6.3x0.8mm
Max. forward voltage: 1.05V
Max. forward impulse current: 0.55kA
Load current: 27A
Max. off-state voltage: 1.8kV
Leads: connectors FASTON
Version: square
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4+18.86 EUR
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VUO36-12NO8 VUO36-12NO8 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE987F62DE8F638D8BF&compId=VUO36-12NO8.pdf?ci_sign=1a4b65dca881860903308acd1343447e9caaede6 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 27A; Ifsm: 550A
Case: FO-B
Electrical mounting: THT
Type of bridge rectifier: three-phase
Leads dimensions: 6.3x0.8mm
Max. forward voltage: 1.05V
Max. forward impulse current: 0.55kA
Load current: 27A
Max. off-state voltage: 1.2kV
Leads: connectors FASTON
Version: square
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5+15.62 EUR
6+12.57 EUR
10+12.34 EUR
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VUO36-14NO8 VUO36-14NO8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880DB09BB21E0C4&compId=VUO36-14NO8.pdf?ci_sign=9fae9c5a6f6c7a281ef36449ee873963aa3c1041 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 27A; Ifsm: 550A
Case: FO-B
Electrical mounting: THT
Type of bridge rectifier: three-phase
Leads dimensions: 6.3x0.8mm
Max. forward voltage: 1.05V
Max. forward impulse current: 0.55kA
Load current: 27A
Max. off-state voltage: 1.4kV
Leads: connectors FASTON
Version: square
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VUB116-16NOXT IXYS VUB116-16NOXT.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Mechanical mounting: screw
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DPG60C400HB DPG60C400HB IXYS Littelfuse-Power-Semiconductors-DPG60C400HB-Datasheet?assetguid=858E0495-7BD0-465A-8A89-2681A2B88183 Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 360A
Case: TO247-3
Max. forward voltage: 1.41V
Power dissipation: 160W
Reverse recovery time: 45ns
Technology: HiPerFRED™ 2nd Gen
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9+7.95 EUR
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IXTQ10P50P IXTQ10P50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO3P
Case: TO3P
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -10A
Gate charge: 50nC
Reverse recovery time: 414ns
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Kind of package: tube
auf Bestellung 120 Stücke:
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8+9.45 EUR
12+6.01 EUR
13+5.68 EUR
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IXTA10P50P IXTA10P50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO263
Case: TO263
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -10A
Gate charge: 50nC
Reverse recovery time: 414ns
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Kind of package: tube
auf Bestellung 120 Stücke:
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13+5.58 EUR
14+5.26 EUR
50+5.06 EUR
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IXTP10P15T IXTP10P15T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03840D407D8BF&compId=IXT_10P15T.pdf?ci_sign=aab868e73793fd93dd8185240cab19c3a6c680af Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -150V
Drain current: -10A
Gate charge: 36nC
Reverse recovery time: 120ns
On-state resistance: 0.35Ω
Polarisation: unipolar
Gate-source voltage: ±15V
Power dissipation: 83W
Case: TO220AB
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 24 Stücke:
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24+2.97 EUR
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CPC1540GS CPC1540GS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D740C7&compId=CPC1540.pdf?ci_sign=5f1209c6b4ad2777cac01c5c99b40e7fe82056f9 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Relay variant: 1-phase; current source
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
Type of relay: solid state
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1540GSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D740C7&compId=CPC1540.pdf?ci_sign=5f1209c6b4ad2777cac01c5c99b40e7fe82056f9 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Relay variant: 1-phase; current source
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
Type of relay: solid state
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Produkt ist nicht verfügbar
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DPG80C400HB DPG80C400HB IXYS media?resourcetype=datasheets&itemid=61E73F8D-AB2F-4EB2-9820-E7123F4DC84B&filename=Littelfuse-Power-Semiconductors-DPG80C400HB-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 40Ax2; tube; Ifsm: 400A; TO247-3; 215W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 40A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: TO247-3
Max. forward voltage: 1.43V
Power dissipation: 215W
Reverse recovery time: 45ns
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.58 EUR
9+8.31 EUR
10+7.85 EUR
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IXTP1N120P IXTP1N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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IXTA1N120P IXTA1N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Kind of package: tube
Case: TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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IXTT02N450HV IXTT02N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1471820&compId=IXTA(T)02N450HV.pdf?ci_sign=035071321f59a72a8b4bd172f91c4d79fad9fbe1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO268HV; 1.6us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 148 Stücke:
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3+28.29 EUR
10+27.2 EUR
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IXTT1N450HV IXTT1N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDC022763C7820&compId=IXTH(T)1N450HV.pdf?ci_sign=1a542cb69701b4bb55549a4f2857e06f4cbbbc22 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 46nC
Reverse recovery time: 1.75µs
Drain current: 1A
On-state resistance: 80Ω
Power dissipation: 520W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXYH30N450HV IXYH30N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB097207154F820&compId=IXYH(t)30N450HV.pdf?ci_sign=ce2d04ecdba3c42f51e93c522cdcffa35e847b64 Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Technology: XPT™
Produkt ist nicht verfügbar
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IXTH02N450HV IXTH02N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91799820&compId=IXTH02N450HV.pdf?ci_sign=95856f459aeb36e578257aa155b9eeb989e13775 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXYT30N450HV IXYT30N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB097207154F820&compId=IXYH(t)30N450HV.pdf?ci_sign=ce2d04ecdba3c42f51e93c522cdcffa35e847b64 Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1542ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Technology: XPT™
Produkt ist nicht verfügbar
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IXYX40N450HV IXYX40N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB0A6524A537820&compId=IXYX40N450HV.pdf?ci_sign=373c09a202907f40fc0498452328dc4218a349c0 Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 40A; 660W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 170nC
Turn-on time: 786ns
Turn-off time: 1128ns
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 660W
Pulsed collector current: 350A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Technology: XPT™
Produkt ist nicht verfügbar
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IXTX1R4N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F14F5820&compId=IXTX1R4N450HV.pdf?ci_sign=6d8938563162ce626547a852b348eda8e18b86c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Reverse recovery time: 660ns
Drain current: 1.4A
Pulsed drain current: 5A
Gate-source voltage: ±20V
On-state resistance: 40Ω
Power dissipation: 960W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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LDA203S LDA203S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC2F747AE01EC&compId=LDA203.pdf?ci_sign=e8c00693dacd4003e8fc035e9efcac42f0fb87f6 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Trigger current: 1A
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.7 EUR
53+1.37 EUR
84+0.86 EUR
88+0.82 EUR
Mindestbestellmenge: 43
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LDA213S LDA213S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AD204370281EC&compId=LDA213.pdf?ci_sign=6bf1f535cde47fa270dceaf89ce0b7c1d34729da Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Trigger current: 1A
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.94 EUR
46+1.59 EUR
72+1 EUR
76+0.94 EUR
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DSS60-0045B DSS60-0045B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD674347A53B8BF&compId=DSS60-0045B.pdf?ci_sign=def65be7d5890f8ff83bbf40b56f0df9a8f25da4 description Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 60A; TO247-2; Ufmax: 0.57V
Mounting: THT
Case: TO247-2
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Power dissipation: 155W
Max. forward voltage: 0.57V
Max. off-state voltage: 45V
Load current: 60A
Max. forward impulse current: 0.6kA
auf Bestellung 132 Stücke:
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15+5.02 EUR
17+4.43 EUR
18+3.98 EUR
20+3.76 EUR
30+3.7 EUR
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LAA108P LAA108P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892260C7&compId=LAA108.pdf?ci_sign=b422f07330ccafc6349ee64d10cd1d1a446af717 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
auf Bestellung 537 Stücke:
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23+3.12 EUR
26+2.85 EUR
30+2.46 EUR
31+2.32 EUR
50+2.25 EUR
Mindestbestellmenge: 23
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LAA108PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892260C7&compId=LAA108.pdf?ci_sign=b422f07330ccafc6349ee64d10cd1d1a446af717 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
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PLA150S PLA150S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Case: DIP6
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.69 EUR
18+4.19 EUR
19+3.96 EUR
Mindestbestellmenge: 16
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PLA150 PLA150 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Case: DIP6
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.33 EUR
18+4.15 EUR
19+3.93 EUR
50+3.9 EUR
Mindestbestellmenge: 14
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IXBH42N170 IXBH42N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1C570134958BF&compId=IXBH42N170_IXBT42N170.pdf?ci_sign=b7a57f2357e60d94d3088f969bde87ef72390bf7 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXFA3N120 IXFA3N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39C93820&compId=IXFA3N120.pdf?ci_sign=8c812837976fee0aac5a23608e183a8630e51a8a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 27 Stücke:
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6+12.07 EUR
9+8.14 EUR
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IXFK120N30T IXFK120N30T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD9A0D060F820&compId=IXFK(X)120N30T.pdf?ci_sign=f7ad151cb9d281d49ca96d548a02ff3a244c55e0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IXFK120N30P3 IXFK120N30P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD4792F693820&compId=IXFK(X)120N30P3.pdf?ci_sign=6c727e8884ef3f66572a5b3f0eace2ea8daa052b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXFK120N25P IXFK120N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9FC6E4A3B820&compId=IXFK(X)120N25P.pdf?ci_sign=3134161775411c290289e374cd33f69b9f8de3e4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXFP270N06T3 IXFP270N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
Produkt ist nicht verfügbar
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IXFA270N06T3 IXFA270N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
Produkt ist nicht verfügbar
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LCC110 LCC110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Type of relay: solid state
Contacts configuration: SPDT
Turn-off time: 4ms
Turn-on time: 4ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.15 EUR
17+4.33 EUR
18+4.09 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
LCC110S LCC110S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4AD8C52C838BF&compId=lcc110.pdf?ci_sign=c9f5a4c15f68bc8b9d95e9201f8b42fdd258dfe1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Type of relay: solid state
Contacts configuration: SPDT
Turn-off time: 4ms
Turn-on time: 4ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.89 EUR
17+4.35 EUR
18+4.12 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
LCC110PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LCC110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LCC110P LCC110P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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MCC255-14io1 MCC255-14io1 IXYS MCC255-14io1.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 250A; Y1; Ufmax: 1.36V
Kind of package: bulk
Case: Y1
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.36V
Load current: 250A
Max. off-state voltage: 1.4kV
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
1+214.6 EUR
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IXDI604SI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDI604SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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IXDI604SIATR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
IXDI604SIATR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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IXDI604SITR IXD_604.pdf
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH24N50L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91825820&compId=IXTH24N50L.pdf?ci_sign=65ce4971a8a2ba17892d822e535deeccc62d7f59
IXTH24N50L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTA300N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC479D53541820&compId=IXTA(P)300N04T2.pdf?ci_sign=b651044253ab618ad040cfd9d99a038916dc36fa
IXTA300N04T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO263; 53ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO263
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 53ns
Produkt ist nicht verfügbar
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MDA72-08N1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 800V; If: 113Ax2; TO240AA
Case: TO240AA
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.6V
Max. off-state voltage: 0.8kV
Max. forward impulse current: 1.54kA
Load current: 113A x2
Semiconductor structure: common anode; double
Produkt ist nicht verfügbar
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IXGH32N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF680363E99820&compId=IXGH(t)32N170.pdf?ci_sign=9963563482ba752aee4d73fdf7543cee510e34e6
IXGH32N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXGH32N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF6B9E68B0F820&compId=IXGH(t)32N170a.pdf?ci_sign=20f3ac78b03e514554c84896e87e65060d55b472
IXGH32N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXGH6N170 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A99DD112ACB8BF&compId=IXG_6N170.pdf?ci_sign=da939209e45ad284a3aacd5ea8533deede4f01af
IXGH6N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 0.6µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXGH16N170 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAB99F1D44C151BF&compId=IXGH16N170-DTE.pdf?ci_sign=03a18b66e5d35198e9e236f78cf7b52f7cc4d616
IXGH16N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXGH16N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38
IXGH16N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGH6N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE62EB13C77820&compId=IXGh(T)6N170A.pdf?ci_sign=e3be7b7321a119c55baa6fb6dbef9aed2b2b65e8
IXGH6N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 14A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXGH10N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAED5175596B820&compId=IXGH(t)10N170.pdf?ci_sign=3b7d3b6c182f8b0f27b026b278621c2bcff2c55b
IXGH10N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Technology: NPT
Mounting: THT
Kind of package: tube
Gate charge: 32nC
Turn-on time: 0.3µs
Turn-off time: 630ns
Collector current: 10A
Pulsed collector current: 70A
Gate-emitter voltage: ±20V
Power dissipation: 110W
Collector-emitter voltage: 1.7kV
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Produkt ist nicht verfügbar
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MKE38P600LB SMPD%20MOSFET%20and%20IGBTs_Product%20Brief_01.pdf
Hersteller: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 600V; 50A; SMPD; double series
Mounting: SMD
Technology: CoolMOS™
Semiconductor structure: double series
Kind of channel: enhancement
Case: SMPD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 0.19µC
Reverse recovery time: 660ns
On-state resistance: 45mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 600V
Produkt ist nicht verfügbar
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IXTY1R6N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be
IXTY1R6N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Mounting: SMD
Case: TO252
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.23 EUR
17+4.22 EUR
25+2.87 EUR
27+2.72 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXTP1R6N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be
IXTP1R6N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA1R6N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be
IXTA1R6N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXTA1R6N100D2HV pVersion=0046&contRep=ZT&docId=005056AB82531EE995A9E51B522E58BF&compId=IXTA1R6N100D2HV.pdf?ci_sign=55d26c1e82b4e332d5c0e06370e2b4aeba32cd94
IXTA1R6N100D2HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 970ns
Gate charge: 27nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: Polar™
Produkt ist nicht verfügbar
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IXTP130N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F130D820&compId=IXTA(P)130N10T.pdf?ci_sign=2932da386061339a6cff57dbeaf4458030129d04
IXTP130N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 67ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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VUO36-16NO8 pVersion=0046&contRep=ZT&docId=E29209FA28E699F19A99005056AB752F&compId=VUO36.pdf?ci_sign=792581ee186cb851d5a743fcb3669bc2c4c9bd6d
VUO36-16NO8
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 27A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: square
Max. forward voltage: 1.05V
Leads: connectors FASTON
Case: FO-B
Leads dimensions: 6.3x0.8mm
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.88 EUR
5+14.56 EUR
6+13.76 EUR
20+13.2 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
VUO36-18NO8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880DD193C42A0C4&compId=VUO36-18NO8.pdf?ci_sign=54b1863c4b23187d629043c5b9c5b16b1507c6e6
VUO36-18NO8
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 27A; Ifsm: 550A
Case: FO-B
Electrical mounting: THT
Type of bridge rectifier: three-phase
Leads dimensions: 6.3x0.8mm
Max. forward voltage: 1.05V
Max. forward impulse current: 0.55kA
Load current: 27A
Max. off-state voltage: 1.8kV
Leads: connectors FASTON
Version: square
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.86 EUR
5+14.3 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
VUO36-12NO8 pVersion=0046&contRep=ZT&docId=005056AB82531EE987F62DE8F638D8BF&compId=VUO36-12NO8.pdf?ci_sign=1a4b65dca881860903308acd1343447e9caaede6
VUO36-12NO8
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 27A; Ifsm: 550A
Case: FO-B
Electrical mounting: THT
Type of bridge rectifier: three-phase
Leads dimensions: 6.3x0.8mm
Max. forward voltage: 1.05V
Max. forward impulse current: 0.55kA
Load current: 27A
Max. off-state voltage: 1.2kV
Leads: connectors FASTON
Version: square
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.62 EUR
6+12.57 EUR
10+12.34 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
VUO36-14NO8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880DB09BB21E0C4&compId=VUO36-14NO8.pdf?ci_sign=9fae9c5a6f6c7a281ef36449ee873963aa3c1041
VUO36-14NO8
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 27A; Ifsm: 550A
Case: FO-B
Electrical mounting: THT
Type of bridge rectifier: three-phase
Leads dimensions: 6.3x0.8mm
Max. forward voltage: 1.05V
Max. forward impulse current: 0.55kA
Load current: 27A
Max. off-state voltage: 1.4kV
Leads: connectors FASTON
Version: square
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.6 EUR
6+13.14 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
VUB116-16NOXT VUB116-16NOXT.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DPG60C400HB Littelfuse-Power-Semiconductors-DPG60C400HB-Datasheet?assetguid=858E0495-7BD0-465A-8A89-2681A2B88183
DPG60C400HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 360A
Case: TO247-3
Max. forward voltage: 1.41V
Power dissipation: 160W
Reverse recovery time: 45ns
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
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IXTQ10P50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e
IXTQ10P50P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO3P
Case: TO3P
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -10A
Gate charge: 50nC
Reverse recovery time: 414ns
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Kind of package: tube
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.45 EUR
12+6.01 EUR
13+5.68 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTA10P50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e
IXTA10P50P
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO263
Case: TO263
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -10A
Gate charge: 50nC
Reverse recovery time: 414ns
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Kind of package: tube
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.58 EUR
14+5.26 EUR
50+5.06 EUR
Mindestbestellmenge: 13
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IXTP10P15T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03840D407D8BF&compId=IXT_10P15T.pdf?ci_sign=aab868e73793fd93dd8185240cab19c3a6c680af
IXTP10P15T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -150V
Drain current: -10A
Gate charge: 36nC
Reverse recovery time: 120ns
On-state resistance: 0.35Ω
Polarisation: unipolar
Gate-source voltage: ±15V
Power dissipation: 83W
Case: TO220AB
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.97 EUR
Mindestbestellmenge: 24
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CPC1540GS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D740C7&compId=CPC1540.pdf?ci_sign=5f1209c6b4ad2777cac01c5c99b40e7fe82056f9
CPC1540GS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Relay variant: 1-phase; current source
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
Type of relay: solid state
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1540GSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D740C7&compId=CPC1540.pdf?ci_sign=5f1209c6b4ad2777cac01c5c99b40e7fe82056f9
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Relay variant: 1-phase; current source
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
Type of relay: solid state
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Produkt ist nicht verfügbar
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DPG80C400HB media?resourcetype=datasheets&itemid=61E73F8D-AB2F-4EB2-9820-E7123F4DC84B&filename=Littelfuse-Power-Semiconductors-DPG80C400HB-Datasheet
DPG80C400HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 40Ax2; tube; Ifsm: 400A; TO247-3; 215W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 40A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: TO247-3
Max. forward voltage: 1.43V
Power dissipation: 215W
Reverse recovery time: 45ns
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.58 EUR
9+8.31 EUR
10+7.85 EUR
Mindestbestellmenge: 7
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IXTP1N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0
IXTP1N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA1N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0
IXTA1N120P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Kind of package: tube
Case: TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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IXTT02N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1471820&compId=IXTA(T)02N450HV.pdf?ci_sign=035071321f59a72a8b4bd172f91c4d79fad9fbe1
IXTT02N450HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO268HV; 1.6us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+28.29 EUR
10+27.2 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXTT1N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDC022763C7820&compId=IXTH(T)1N450HV.pdf?ci_sign=1a542cb69701b4bb55549a4f2857e06f4cbbbc22
IXTT1N450HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 46nC
Reverse recovery time: 1.75µs
Drain current: 1A
On-state resistance: 80Ω
Power dissipation: 520W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH30N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB097207154F820&compId=IXYH(t)30N450HV.pdf?ci_sign=ce2d04ecdba3c42f51e93c522cdcffa35e847b64
IXYH30N450HV
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Technology: XPT™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH02N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91799820&compId=IXTH02N450HV.pdf?ci_sign=95856f459aeb36e578257aa155b9eeb989e13775
IXTH02N450HV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYT30N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB097207154F820&compId=IXYH(t)30N450HV.pdf?ci_sign=ce2d04ecdba3c42f51e93c522cdcffa35e847b64
IXYT30N450HV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1542ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Technology: XPT™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYX40N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB0A6524A537820&compId=IXYX40N450HV.pdf?ci_sign=373c09a202907f40fc0498452328dc4218a349c0
IXYX40N450HV
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 40A; 660W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 170nC
Turn-on time: 786ns
Turn-off time: 1128ns
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 660W
Pulsed collector current: 350A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Technology: XPT™
Produkt ist nicht verfügbar
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IXTX1R4N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F14F5820&compId=IXTX1R4N450HV.pdf?ci_sign=6d8938563162ce626547a852b348eda8e18b86c0
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Reverse recovery time: 660ns
Drain current: 1.4A
Pulsed drain current: 5A
Gate-source voltage: ±20V
On-state resistance: 40Ω
Power dissipation: 960W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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LDA203S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC2F747AE01EC&compId=LDA203.pdf?ci_sign=e8c00693dacd4003e8fc035e9efcac42f0fb87f6
LDA203S
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Trigger current: 1A
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.7 EUR
53+1.37 EUR
84+0.86 EUR
88+0.82 EUR
Mindestbestellmenge: 43
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LDA213S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AD204370281EC&compId=LDA213.pdf?ci_sign=6bf1f535cde47fa270dceaf89ce0b7c1d34729da
LDA213S
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Trigger current: 1A
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
46+1.59 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 37
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DSS60-0045B description pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD674347A53B8BF&compId=DSS60-0045B.pdf?ci_sign=def65be7d5890f8ff83bbf40b56f0df9a8f25da4
DSS60-0045B
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 60A; TO247-2; Ufmax: 0.57V
Mounting: THT
Case: TO247-2
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Power dissipation: 155W
Max. forward voltage: 0.57V
Max. off-state voltage: 45V
Load current: 60A
Max. forward impulse current: 0.6kA
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.02 EUR
17+4.43 EUR
18+3.98 EUR
20+3.76 EUR
30+3.7 EUR
Mindestbestellmenge: 15
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LAA108P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892260C7&compId=LAA108.pdf?ci_sign=b422f07330ccafc6349ee64d10cd1d1a446af717
LAA108P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
auf Bestellung 537 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.12 EUR
26+2.85 EUR
30+2.46 EUR
31+2.32 EUR
50+2.25 EUR
Mindestbestellmenge: 23
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LAA108PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892260C7&compId=LAA108.pdf?ci_sign=b422f07330ccafc6349ee64d10cd1d1a446af717
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
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PLA150S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558
PLA150S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Case: DIP6
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.69 EUR
18+4.19 EUR
19+3.96 EUR
Mindestbestellmenge: 16
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PLA150 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558
PLA150
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Case: DIP6
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.33 EUR
18+4.15 EUR
19+3.93 EUR
50+3.9 EUR
Mindestbestellmenge: 14
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IXBH42N170 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1C570134958BF&compId=IXBH42N170_IXBT42N170.pdf?ci_sign=b7a57f2357e60d94d3088f969bde87ef72390bf7
IXBH42N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXFA3N120 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39C93820&compId=IXFA3N120.pdf?ci_sign=8c812837976fee0aac5a23608e183a8630e51a8a
IXFA3N120
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.07 EUR
9+8.14 EUR
Mindestbestellmenge: 6
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IXFK120N30T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD9A0D060F820&compId=IXFK(X)120N30T.pdf?ci_sign=f7ad151cb9d281d49ca96d548a02ff3a244c55e0
IXFK120N30T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXFK120N30P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD4792F693820&compId=IXFK(X)120N30P3.pdf?ci_sign=6c727e8884ef3f66572a5b3f0eace2ea8daa052b
IXFK120N30P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXFK120N25P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9FC6E4A3B820&compId=IXFK(X)120N25P.pdf?ci_sign=3134161775411c290289e374cd33f69b9f8de3e4
IXFK120N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXFP270N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f
IXFP270N06T3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
Produkt ist nicht verfügbar
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IXFA270N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f
IXFA270N06T3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
Produkt ist nicht verfügbar
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LCC110 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2
LCC110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Type of relay: solid state
Contacts configuration: SPDT
Turn-off time: 4ms
Turn-on time: 4ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.15 EUR
17+4.33 EUR
18+4.09 EUR
Mindestbestellmenge: 14
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LCC110S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4AD8C52C838BF&compId=lcc110.pdf?ci_sign=c9f5a4c15f68bc8b9d95e9201f8b42fdd258dfe1
LCC110S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Type of relay: solid state
Contacts configuration: SPDT
Turn-off time: 4ms
Turn-on time: 4ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.89 EUR
17+4.35 EUR
18+4.12 EUR
Mindestbestellmenge: 10
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LCC110PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCC110STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCC110P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2
LCC110P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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MCC255-14io1 MCC255-14io1.pdf
MCC255-14io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 250A; Y1; Ufmax: 1.36V
Kind of package: bulk
Case: Y1
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.36V
Load current: 250A
Max. off-state voltage: 1.4kV
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+214.6 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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