Produkte > IXYS > Alle Produkte des Herstellers IXYS (18026) > Seite 298 nach 301

Wählen Sie Seite:   [  << Vorherige Seite ]  1 30 60 90 120 150 180 210 240 270 293 294 295 296 297 298 299 300 301  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
MCC44-08io1B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 49A; TO240AA; Ufmax: 1.8V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.8V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 100/200mA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC44-08io8B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 49A; TO240AA; Ufmax: 1.8V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.8V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 100/200mA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DLA100B1200LB-TUB DLA100B1200LB-TUB IXYS DLA100B1200LB.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 1.2kV
Kind of package: tube
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. forward voltage: 1.23V
Load current: 124A
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
4+21.36 EUR
20+21.06 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXCP10M45S IXCP10M45S IXYS IXCP10M90S.pdf Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MD16130S-DKM2MM IXYS media?resourcetype=datasheets&itemid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8&filename=littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 130A; package S
Max. load current: 204A
Max. forward voltage: 1.5V
Load current: 130A
Semiconductor structure: common cathode; double
Max. forward impulse current: 3.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: package S
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LF21064NTR LF21064NTR IXYS LF21064NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMIX1F40N110P MMIX1F40N110P IXYS DS100431(MMIX1F40N110P).pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
2+65.82 EUR
20+64.81 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
PM1206 PM1206 IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 100mA
Mounting: THT
Case: DIP6
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.08 EUR
13+5.51 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
PM1206S PM1206S IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PM1205S PM1205S IXYS PM1205.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PM1206STR IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDN609SI IXDN609SI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 1613 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.59 EUR
32+2.25 EUR
34+2.13 EUR
200+2.04 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IXDN609SIA IXDN609SIA IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 659 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.63 EUR
36+2.00 EUR
50+1.46 EUR
53+1.37 EUR
200+1.32 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXDN609PI IXDN609PI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 821 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.46 EUR
34+2.12 EUR
50+1.46 EUR
53+1.37 EUR
250+1.36 EUR
500+1.32 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IXDN609YI IXDN609YI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 814 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.38 EUR
25+2.97 EUR
26+2.80 EUR
500+2.75 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
VUO82-16NO7 VUO82-16NO7 IXYS VUO82-16NO7.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
2+44.40 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
VUO36-16NO8 VUO36-16NO8 IXYS VUO36.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A
Electrical mounting: THT
Leads: connectors 6,3x0,8mm
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.05V
Load current: 27A
Max. forward impulse current: 0.55kA
Version: square
Type of bridge rectifier: three-phase
Case: FO-B
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
4+20.36 EUR
5+14.53 EUR
6+13.73 EUR
50+13.46 EUR
100+13.20 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXYH30N65C3 IXYH30N65C3 IXYS IXYH(P)30N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYP30N65C3 IXYP30N65C3 IXYS IXYH(P)30N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH30N65C3H1 IXYH30N65C3H1 IXYS IXY_30N65C3H1_HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYT30N65C3H1HV IXYS IXY_30N65C3H1_HV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LF2113BTR LF2113BTR IXYS LF2110BTR_LF2113BTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16; -2.5÷2.5A
Operating temperature: -40...125°C
Case: SO16
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LF2136BTR IXYS LF2136BTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Type of integrated circuit: driver
Number of channels: 6
Case: SO28
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBA150S PBA150S IXYS PBA150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Mounting: SMT
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Control current max.: 50mA
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 7Ω
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.90 EUR
11+6.72 EUR
12+6.35 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
PBA150STR IXYS PBA150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC2317NTR IXYS CPC2317N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXBT16N170AHV IXBT16N170AHV IXYS IXBA16N170AHV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Mounting: SMD
Case: TO268HV
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Technology: BiMOSFET™
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.86 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXBT16N170A IXBT16N170A IXYS IXBH(T)16N170A.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Mounting: SMD
Case: TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Technology: BiMOSFET™
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.86 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXGH10N170A IXGH10N170A IXYS IXG_10N170A.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 5A
Pulsed collector current: 20A
Turn-on time: 107ns
Turn-off time: 240ns
Type of transistor: IGBT
Power dissipation: 140W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 29nC
Technology: NPT
Mounting: THT
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.01 EUR
10+7.29 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXGH24N170 IXGH24N170 IXYS IXGH(T)24N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 150A
Turn-on time: 105ns
Turn-off time: 560ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 106nC
Technology: NPT
Mounting: THT
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.56 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXGH32N170 IXGH32N170 IXYS IXGH(t)32N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 32A
Pulsed collector current: 200A
Turn-on time: 90ns
Turn-off time: 920ns
Type of transistor: IGBT
Power dissipation: 350W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 155nC
Technology: NPT
Mounting: THT
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
4+22.24 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFP270N06T3 IXFP270N06T3 IXYS IXxx270N06T3-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; TrenchT3™
Reverse recovery time: 47ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA270N06T3 IXFA270N06T3 IXYS IXxx270N06T3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; TrenchT3™
Reverse recovery time: 47ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTY44N10T IXTY44N10T IXYS IXTP(Y)44N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Drain-source voltage: 100V
Drain current: 44A
Case: TO252
Polarisation: unipolar
On-state resistance: 30mΩ
Power dissipation: 130W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Kind of channel: enhancement
Mounting: SMD
Reverse recovery time: 60ns
Type of transistor: N-MOSFET
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.97 EUR
40+1.80 EUR
43+1.70 EUR
70+1.63 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IXFP72N20X3M IXFP72N20X3M IXYS IXFP72N20X3M.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 36W; TO220FP
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.59 EUR
11+6.85 EUR
12+6.48 EUR
50+6.38 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFP72N20X3 IXFP72N20X3 IXYS IXF_72N20X3.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO220AB
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.59 EUR
11+6.85 EUR
12+6.48 EUR
50+6.38 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFP50N20X3 IXFP50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Reverse recovery time: 70ns
Drain-source voltage: 200V
Drain current: 50A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: THT
Case: TO220AB
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.21 EUR
12+6.49 EUR
14+5.18 EUR
15+4.89 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXFP36N20X3 IXFP36N20X3 IXYS IXF_36N20X3.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 176W; TO220AB
Reverse recovery time: 75ns
Drain-source voltage: 200V
Drain current: 36A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Gate charge: 21nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.26 EUR
22+3.37 EUR
23+3.19 EUR
50+3.17 EUR
100+3.07 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXFY36N20X3 IXFY36N20X3 IXYS IXF_36N20X3.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 176W; TO252
Reverse recovery time: 75ns
Drain-source voltage: 200V
Drain current: 36A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Gate charge: 21nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO252
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.68 EUR
20+3.65 EUR
21+3.45 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXFA72N20X3 IXFA72N20X3 IXYS IXF_72N20X3.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO263
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
6+11.95 EUR
11+6.68 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ72N20X3 IXFQ72N20X3 IXYS IXF_72N20X3.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO3P
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.10 EUR
10+7.18 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFK220N20X3 IXFK220N20X3 IXYS IXF_220N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Reverse recovery time: 116ns
Drain-source voltage: 200V
Drain current: 220A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO264
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.98 EUR
25+18.60 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXTK170P10P IXTK170P10P IXYS IXTK170P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Power dissipation: 890W
Polarisation: unipolar
On-state resistance: 14mΩ
Drain current: -170A
Kind of package: tube
Drain-source voltage: -100V
Reverse recovery time: 176ns
Case: TO264
Gate charge: 240nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTK17N120L IXTK17N120L IXYS IXTK(X)17N120L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; TO264; 1.83us
Power dissipation: 700W
Polarisation: unipolar
On-state resistance: 0.9Ω
Drain current: 17A
Kind of package: tube
Drain-source voltage: 1.2kV
Reverse recovery time: 1.83µs
Case: TO264
Features of semiconductor devices: linear power mosfet
Gate charge: 155nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXKC23N60C5 IXKC23N60C5 IXYS IXKC23N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Power dissipation: 147W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXBH42N170 IXBH42N170 IXYS IXBH42N170_IXBT42N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSEP12-12A DSEP12-12A IXYS DSEP12-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 334 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.40 EUR
34+2.13 EUR
36+2.02 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
DSEP12-12AZ-TUB DSEP12-12AZ-TUB IXYS DSEP12-12AZ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; TO263ABHV; Ufmax: 1.87V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.66 EUR
22+3.27 EUR
28+2.62 EUR
29+2.47 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXTH240N15X4 IXTH240N15X4 IXYS IXTH240N15X4_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 123 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.92 EUR
6+12.01 EUR
30+11.90 EUR
60+11.54 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXHX40N150V1HV IXHX40N150V1HV IXYS IXHX40N150V1HV.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: TO247PLUS-HV
Mounting: THT
Max. forward impulse current: 7.6kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK240N15T2 IXFK240N15T2 IXYS IXFK(X)240N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 240A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH240N15X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_240n15x3_datasheet.pdf?assetguid=db0daa8a-a090-4544-9e9a-0eaae950088b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 240A; Idm: 420A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Pulsed drain current: 420A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 97ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFX240N15T2 IXFX240N15T2 IXYS IXFK(X)240N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMJX1H40N150 IXYS MMJX1H40N150.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 15.5kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 15.5kA
Features of semiconductor devices: Kelvin terminal; MOS-gated thyristor (MGT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA110N055T2 IXTA110N055T2 IXYS IXTA(P)110N055T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD162-16io1B IXYS PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSEI2X31-10B DSEI2X31-10B IXYS DSEI2x30-10B_DSEI2x31-10B.pdf Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 30A x2
Max. forward impulse current: 200A
Case: SOT227B
Electrical mounting: screw
Max. forward voltage: 2V
Semiconductor structure: double independent
Mechanical mounting: screw
Type of module: diode
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
3+27.47 EUR
10+26.41 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DSEI2X30-10B DSEI2X30-10B IXYS DSEI2x30-10B_DSEI2x31-10B.pdf Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 30A x2
Max. forward impulse current: 200A
Case: SOT227B
Electrical mounting: screw
Max. forward voltage: 2V
Semiconductor structure: double independent
Mechanical mounting: screw
Type of module: diode
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
3+27.07 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
MCC95-18io1B MCC95-18io1B IXYS MCC95-18IO1B-DTE.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
2+46.49 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXTT360N055T2 IXTT360N055T2 IXYS IXTH(T)360N055T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO268
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 78ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC44-08io1B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 49A; TO240AA; Ufmax: 1.8V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.8V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 100/200mA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC44-08io8B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 49A; TO240AA; Ufmax: 1.8V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.8V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 100/200mA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DLA100B1200LB-TUB DLA100B1200LB.pdf
DLA100B1200LB-TUB
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 1.2kV
Kind of package: tube
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. forward voltage: 1.23V
Load current: 124A
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.36 EUR
20+21.06 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXCP10M45S IXCP10M90S.pdf
IXCP10M45S
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MD16130S-DKM2MM media?resourcetype=datasheets&itemid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8&filename=littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 130A; package S
Max. load current: 204A
Max. forward voltage: 1.5V
Load current: 130A
Semiconductor structure: common cathode; double
Max. forward impulse current: 3.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: package S
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LF21064NTR LF21064NTR.pdf
LF21064NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMIX1F40N110P DS100431(MMIX1F40N110P).pdf
MMIX1F40N110P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+65.82 EUR
20+64.81 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
PM1206 PM1206.pdf
PM1206
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 100mA
Mounting: THT
Case: DIP6
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.08 EUR
13+5.51 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
PM1206S PM1206.pdf
PM1206S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PM1205S PM1205.pdf
PM1205S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PM1206STR PM1206.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDN609SI IXDD609CI.pdf
IXDN609SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 1613 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.59 EUR
32+2.25 EUR
34+2.13 EUR
200+2.04 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IXDN609SIA IXDD609CI.pdf
IXDN609SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 659 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.63 EUR
36+2.00 EUR
50+1.46 EUR
53+1.37 EUR
200+1.32 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXDN609PI IXDD609CI.pdf
IXDN609PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 821 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.46 EUR
34+2.12 EUR
50+1.46 EUR
53+1.37 EUR
250+1.36 EUR
500+1.32 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IXDN609YI IXDD609CI.pdf
IXDN609YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 814 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.38 EUR
25+2.97 EUR
26+2.80 EUR
500+2.75 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
VUO82-16NO7 VUO82-16NO7.pdf
VUO82-16NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+44.40 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
VUO36-16NO8 VUO36.pdf
VUO36-16NO8
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A
Electrical mounting: THT
Leads: connectors 6,3x0,8mm
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.05V
Load current: 27A
Max. forward impulse current: 0.55kA
Version: square
Type of bridge rectifier: three-phase
Case: FO-B
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.36 EUR
5+14.53 EUR
6+13.73 EUR
50+13.46 EUR
100+13.20 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXYH30N65C3 IXYH(P)30N65C3.pdf
IXYH30N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYP30N65C3 IXYH(P)30N65C3.pdf
IXYP30N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH30N65C3H1 IXY_30N65C3H1_HV.pdf
IXYH30N65C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYT30N65C3H1HV IXY_30N65C3H1_HV.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LF2113BTR LF2110BTR_LF2113BTR.pdf
LF2113BTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16; -2.5÷2.5A
Operating temperature: -40...125°C
Case: SO16
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LF2136BTR LF2136BTR.pdf
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Type of integrated circuit: driver
Number of channels: 6
Case: SO28
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBA150S PBA150.pdf
PBA150S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Mounting: SMT
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Control current max.: 50mA
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 7Ω
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.90 EUR
11+6.72 EUR
12+6.35 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
PBA150STR PBA150.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC2317NTR CPC2317N.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXBT16N170AHV IXBA16N170AHV.pdf
IXBT16N170AHV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Mounting: SMD
Case: TO268HV
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Technology: BiMOSFET™
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.86 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXBT16N170A IXBH(T)16N170A.pdf
IXBT16N170A
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Mounting: SMD
Case: TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Technology: BiMOSFET™
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.86 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXGH10N170A IXG_10N170A.pdf
IXGH10N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 5A
Pulsed collector current: 20A
Turn-on time: 107ns
Turn-off time: 240ns
Type of transistor: IGBT
Power dissipation: 140W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 29nC
Technology: NPT
Mounting: THT
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.01 EUR
10+7.29 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXGH24N170 IXGH(T)24N170.pdf
IXGH24N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 150A
Turn-on time: 105ns
Turn-off time: 560ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 106nC
Technology: NPT
Mounting: THT
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.56 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXGH32N170 IXGH(t)32N170.pdf
IXGH32N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 32A
Pulsed collector current: 200A
Turn-on time: 90ns
Turn-off time: 920ns
Type of transistor: IGBT
Power dissipation: 350W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 155nC
Technology: NPT
Mounting: THT
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+22.24 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFP270N06T3 IXxx270N06T3-DTE.pdf
IXFP270N06T3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; TrenchT3™
Reverse recovery time: 47ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA270N06T3 IXxx270N06T3-DTE.pdf
IXFA270N06T3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; TrenchT3™
Reverse recovery time: 47ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTY44N10T IXTP(Y)44N10T.pdf
IXTY44N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Drain-source voltage: 100V
Drain current: 44A
Case: TO252
Polarisation: unipolar
On-state resistance: 30mΩ
Power dissipation: 130W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Kind of channel: enhancement
Mounting: SMD
Reverse recovery time: 60ns
Type of transistor: N-MOSFET
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.97 EUR
40+1.80 EUR
43+1.70 EUR
70+1.63 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IXFP72N20X3M IXFP72N20X3M.pdf 200VProductBrief.pdf
IXFP72N20X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 36W; TO220FP
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.59 EUR
11+6.85 EUR
12+6.48 EUR
50+6.38 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFP72N20X3 IXF_72N20X3.pdf 200VProductBrief.pdf
IXFP72N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO220AB
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.59 EUR
11+6.85 EUR
12+6.48 EUR
50+6.38 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFP50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
IXFP50N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Reverse recovery time: 70ns
Drain-source voltage: 200V
Drain current: 50A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: THT
Case: TO220AB
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.21 EUR
12+6.49 EUR
14+5.18 EUR
15+4.89 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXFP36N20X3 IXF_36N20X3.pdf 200VProductBrief.pdf
IXFP36N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 176W; TO220AB
Reverse recovery time: 75ns
Drain-source voltage: 200V
Drain current: 36A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Gate charge: 21nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.26 EUR
22+3.37 EUR
23+3.19 EUR
50+3.17 EUR
100+3.07 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXFY36N20X3 IXF_36N20X3.pdf 200VProductBrief.pdf
IXFY36N20X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 176W; TO252
Reverse recovery time: 75ns
Drain-source voltage: 200V
Drain current: 36A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Gate charge: 21nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO252
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.68 EUR
20+3.65 EUR
21+3.45 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXFA72N20X3 IXF_72N20X3.pdf 200VProductBrief.pdf
IXFA72N20X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO263
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.95 EUR
11+6.68 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ72N20X3 IXF_72N20X3.pdf 200VProductBrief.pdf
IXFQ72N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO3P
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.10 EUR
10+7.18 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFK220N20X3 IXF_220N20X3_HV.pdf 200VProductBrief.pdf
IXFK220N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Reverse recovery time: 116ns
Drain-source voltage: 200V
Drain current: 220A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO264
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.98 EUR
25+18.60 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXTK170P10P IXTK170P10P.pdf
IXTK170P10P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Power dissipation: 890W
Polarisation: unipolar
On-state resistance: 14mΩ
Drain current: -170A
Kind of package: tube
Drain-source voltage: -100V
Reverse recovery time: 176ns
Case: TO264
Gate charge: 240nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTK17N120L IXTK(X)17N120L.pdf
IXTK17N120L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; TO264; 1.83us
Power dissipation: 700W
Polarisation: unipolar
On-state resistance: 0.9Ω
Drain current: 17A
Kind of package: tube
Drain-source voltage: 1.2kV
Reverse recovery time: 1.83µs
Case: TO264
Features of semiconductor devices: linear power mosfet
Gate charge: 155nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXKC23N60C5 IXKC23N60C5.pdf
IXKC23N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Power dissipation: 147W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXBH42N170 IXBH42N170_IXBT42N170.pdf
IXBH42N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSEP12-12A DSEP12-12A.pdf
DSEP12-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 334 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.40 EUR
34+2.13 EUR
36+2.02 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
DSEP12-12AZ-TUB DSEP12-12AZ.pdf
DSEP12-12AZ-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; TO263ABHV; Ufmax: 1.87V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.66 EUR
22+3.27 EUR
28+2.62 EUR
29+2.47 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXTH240N15X4 IXTH240N15X4_HV.pdf
IXTH240N15X4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 123 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.92 EUR
6+12.01 EUR
30+11.90 EUR
60+11.54 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXHX40N150V1HV IXHX40N150V1HV.pdf
IXHX40N150V1HV
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: TO247PLUS-HV
Mounting: THT
Max. forward impulse current: 7.6kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK240N15T2 IXFK(X)240N15T2.pdf
IXFK240N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 240A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH240N15X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_240n15x3_datasheet.pdf?assetguid=db0daa8a-a090-4544-9e9a-0eaae950088b
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 240A; Idm: 420A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Pulsed drain current: 420A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 97ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFX240N15T2 IXFK(X)240N15T2.pdf
IXFX240N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMJX1H40N150 MMJX1H40N150.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 15.5kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 15.5kA
Features of semiconductor devices: Kelvin terminal; MOS-gated thyristor (MGT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA110N055T2 IXTA(P)110N055T2.pdf
IXTA110N055T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD162-16io1B PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSEI2X31-10B DSEI2x30-10B_DSEI2x31-10B.pdf
DSEI2X31-10B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 30A x2
Max. forward impulse current: 200A
Case: SOT227B
Electrical mounting: screw
Max. forward voltage: 2V
Semiconductor structure: double independent
Mechanical mounting: screw
Type of module: diode
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+27.47 EUR
10+26.41 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DSEI2X30-10B DSEI2x30-10B_DSEI2x31-10B.pdf
DSEI2X30-10B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 30A x2
Max. forward impulse current: 200A
Case: SOT227B
Electrical mounting: screw
Max. forward voltage: 2V
Semiconductor structure: double independent
Mechanical mounting: screw
Type of module: diode
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+27.07 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
MCC95-18io1B MCC95-18IO1B-DTE.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC95-18io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+46.49 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXTT360N055T2 IXTH(T)360N055T2.pdf
IXTT360N055T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO268
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 78ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 30 60 90 120 150 180 210 240 270 293 294 295 296 297 298 299 300 301  [ Nächste Seite >> ]