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VHFD37-12IO1 VHFD37-12IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6EF41935CA0C4&compId=VHFD37.pdf?ci_sign=6056112efac0b4a16be8fae12f15d363ee05895d Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Gate current: 65mA
Features of semiconductor devices: field diodes; freewheelling diode
Leads dimensions: 2x0.5mm
Produkt ist nicht verfügbar
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DSI45-16A DSI45-16A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB44881091F0143&compId=DSI45-16A.pdf?ci_sign=0605bc7a5e3664dd208c1e0a4410373628d8b886 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Kind of package: tube
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
auf Bestellung 373 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.86 EUR
18+3.99 EUR
19+3.78 EUR
30+3.75 EUR
Mindestbestellmenge: 15
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MEE250-12DA MEE250-12DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Case: Y4-M6
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.54V
Type of semiconductor module: diode
Load current: 260A
Semiconductor structure: double series
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.2kV
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CPC1943G CPC1943G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81740C7&compId=CPC1943.pdf?ci_sign=a01e70cd2a1035fd2c83dd4b3dd11577a147baa4 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: THT
Operating temperature: -40...85°C
Switching method: zero voltage switching
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Insulation voltage: 3.75kV
auf Bestellung 133 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.21 EUR
12+6.16 EUR
13+5.82 EUR
50+5.63 EUR
100+5.59 EUR
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CPC1943GS CPC1943GS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81740C7&compId=CPC1943.pdf?ci_sign=a01e70cd2a1035fd2c83dd4b3dd11577a147baa4 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Switching method: zero voltage switching
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Insulation voltage: 3.75kV
auf Bestellung 4 Stücke:
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4+17.88 EUR
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DSA20C45PB DSA20C45PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C91FD17A1DB8BF&compId=DSA20C45PB.pdf?ci_sign=7cdcf1c17ba6d046b85f0f92e7ac12b68cfe04db Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220AB; Ufmax: 0.61V
Power dissipation: 45W
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 45V
Max. forward voltage: 0.61V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 260A
auf Bestellung 362 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
132+0.54 EUR
139+0.52 EUR
147+0.49 EUR
250+0.48 EUR
Mindestbestellmenge: 129
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DSA20C100PN DSA20C100PN IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C90C74951718BF&compId=DSA20C100PN.pdf?ci_sign=39704861a26cf68ccc6e55d0f47bc62fca68da11 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.71V
Power dissipation: 35W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220FP
Max. off-state voltage: 100V
Max. forward voltage: 0.71V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.24kA
auf Bestellung 42 Stücke:
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42+1.7 EUR
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DSA20C60PN DSA20C60PN IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C940C99465B8BF&compId=DSA20C60PN.pdf?ci_sign=f23f6f12d9e28e2df814647d5f8a3a155d95bfb1 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.7V
Power dissipation: 35W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220FP
Max. off-state voltage: 60V
Max. forward voltage: 0.7V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.24kA
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
65+1.1 EUR
73+0.99 EUR
84+0.86 EUR
90+0.8 EUR
Mindestbestellmenge: 59
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IXFN48N60P IXFN48N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9735B5A4BF820&compId=IXFN48N60P.pdf?ci_sign=3767de0c252b66993db8e840b8859a54ca75ee30 description Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; Idm: 110A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 625W
Case: SOT227B
On-state resistance: 0.14Ω
Gate charge: 150nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Technology: HiPerFET™; PolarHV™
Gate-source voltage: ±40V
Pulsed drain current: 110A
Semiconductor structure: single transistor
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IXFQ28N60P3 IXFQ28N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285A2A90AE15820&compId=IXFH(Q)28N60P3.pdf?ci_sign=0f34ebb36ef205574a8cc03b1e646bbbf9a5d93c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
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IXFR48N60P IXFR48N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC58D820&compId=IXFR48N60P.pdf?ci_sign=ccd3cbc214a931f568a20e2a1944f812c5751f5a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
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IXFX48N60P IXFX48N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A94E9FB88C78BF&compId=IXF_48N60P.pdf?ci_sign=2d8decaa7bf5853333c30536e1424c18bf5cd01b Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 48A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHV™
Gate-source voltage: ±30V
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FMM22-06PF FMM22-06PF IXYS Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 600V; 12A; Idm: 66A
Type of transistor: N-MOSFET x2
Power dissipation: 130W
Polarisation: unipolar
Kind of package: tube
Gate charge: 58nC
Technology: PolarHV™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 66A
Mounting: THT
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.35Ω
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
4+22.15 EUR
10+21.29 EUR
Mindestbestellmenge: 4
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IXTH1N450HV IXTH1N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDC022763C7820&compId=IXTH(T)1N450HV.pdf?ci_sign=1a542cb69701b4bb55549a4f2857e06f4cbbbc22 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 80Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1.75µs
Features of semiconductor devices: standard power mosfet
Gate charge: 46nC
auf Bestellung 28 Stücke:
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2+45.35 EUR
10+44.83 EUR
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CPC1983YE CPC1983YE IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49385343880C7&compId=CPC1983YE.pdf?ci_sign=974827daa00530c081d8f8338c456dd3b19928d6 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.600VAC
Operating temperature: -40...85°C
Case: SIP4
On-state resistance: 6Ω
Turn-on time: 5ms
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Kind of output: MOSFET
Insulation voltage: 4kV
Contacts configuration: SPST-NO
Max. operating current: 0.5A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.24 EUR
15+4.99 EUR
16+4.72 EUR
Mindestbestellmenge: 10
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IXTP1N80P IXTP1N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDBB5A9E329820&compId=IXTA(P%2CU%2CY)1N80P.pdf?ci_sign=4645dc89c6927a3efcc681682c407ac62438afa8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO220AB; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Case: TO220AB
On-state resistance: 14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 42W
Features of semiconductor devices: standard power mosfet
Gate charge: 9nC
Reverse recovery time: 700ns
Produkt ist nicht verfügbar
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IXFP72N20X3M IXFP72N20X3M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB6F7347C778BF&compId=IXFP72N20X3M.pdf?ci_sign=3600707d127237f42d9526b0662e3cbacddfbaab pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 36W; TO220FP
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.43 EUR
15+4.79 EUR
17+4.22 EUR
18+3.99 EUR
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IXFA7N100P IXFA7N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEC13C244BC98BF&compId=IXF_7N100P.pdf?ci_sign=098a71bb06e557089a0d1511de1a94a0bc177181 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 7A
On-state resistance: 1.9Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 47nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: SMD
Case: TO263
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.85 EUR
15+4.83 EUR
Mindestbestellmenge: 10
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IXFH74N20P IXFH74N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5AEB5963298BF&compId=IXF(V%2CH)74N20P(S).pdf?ci_sign=0f089991e74ed191755334448918e2eb4cb172ba Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO247-3
Reverse recovery time: 200ns
Drain-source voltage: 200V
Drain current: 74A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Gate charge: 107nC
Technology: HiPerFET™; PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
auf Bestellung 128 Stücke:
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9+8.74 EUR
12+5.99 EUR
30+5.88 EUR
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IXFP72N20X3 IXFP72N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB72F794D618BF&compId=IXF_72N20X3.pdf?ci_sign=902d8e62addc73cd538be477ab29d6e14e9de703 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO220AB
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.18 EUR
11+6.85 EUR
12+6.48 EUR
50+6.39 EUR
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IXFH70N30Q3 IXFH70N30Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D435564A4BB820&compId=IXFH(T)70N30Q3.pdf?ci_sign=0939f99f658b4d62edd06a74b1b6715b89a4207f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO247-3
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Kind of package: tube
Gate charge: 98nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
auf Bestellung 24 Stücke:
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5+17.07 EUR
7+11.13 EUR
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IXFH76N15T2 IXFH76N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D41BF38A751820&compId=IXFA(H%2CP)76N15T2.pdf?ci_sign=e58b954c14aed23e6b59d6e696317db032e28994 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO247-3; 69ns
Reverse recovery time: 69ns
Drain-source voltage: 150V
Drain current: 76A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 350W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 97nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
auf Bestellung 210 Stücke:
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11+6.68 EUR
14+5.16 EUR
15+4.88 EUR
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IXFQ72N20X3 IXFQ72N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB72F794D618BF&compId=IXF_72N20X3.pdf?ci_sign=902d8e62addc73cd538be477ab29d6e14e9de703 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO3P
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.65 EUR
14+5.11 EUR
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IXFA72N20X3 IXFA72N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB72F794D618BF&compId=IXF_72N20X3.pdf?ci_sign=902d8e62addc73cd538be477ab29d6e14e9de703 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO263
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
8+10.07 EUR
11+6.52 EUR
12+6.16 EUR
50+5.92 EUR
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IXFH170N25X3 IXFH170N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D53B40079AF820&compId=IXFH(K%2CT)170N25X3_HV.pdf?ci_sign=ea75d9eee3b336dc745cd69a3f9d9bb3eb1a5cef Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO247-3; 140ns
Reverse recovery time: 140ns
Drain-source voltage: 250V
Drain current: 170A
On-state resistance: 7.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 0.19µC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.35 EUR
5+17.35 EUR
30+16.99 EUR
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IXFK170N10P IXFK170N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA4D451E02B38BF&compId=IXFH170N10P_IXFK170N10P.pdf?ci_sign=8e0c57b7145cd2d707e91251170b8da9af42fcd8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Reverse recovery time: 120ns
Drain-source voltage: 100V
Drain current: 170A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 715W
Polarisation: unipolar
Kind of package: tube
Gate charge: 198nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO264
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
5+16.85 EUR
6+12.58 EUR
7+11.9 EUR
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IXFB170N30P IXFB170N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED466DF8CDA6A18&compId=IXFB170N30P.pdf?ci_sign=d2e1603ab2b4ff6c3b3926b7ca4a5bff751cbdb1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™
Reverse recovery time: 200ns
Drain-source voltage: 300V
Drain current: 170A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 258nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: PLUS264™
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
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IXFA230N075T2 IXFA230N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD0BBC1F507820&compId=IXFA(P)230N075T2.pdf?ci_sign=a193bb6c937ab8a381de2b728ab686af5cf3de01 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns
Reverse recovery time: 59ns
Drain-source voltage: 75V
Drain current: 230A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 178nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
auf Bestellung 10 Stücke:
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10+7.15 EUR
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IXFX220N17T2 IXFX220N17T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD21B57C17D820&compId=IXFK(X)220N17T2.pdf?ci_sign=05649ffdd8b9bb30b334fa0980d890b6e4de392d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Drain-source voltage: 170V
Drain current: 220A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 500nC
Kind of channel: enhancement
Mounting: THT
Case: PLUS247™
auf Bestellung 14 Stücke:
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5+16.03 EUR
6+12.68 EUR
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IXFH230N075T2 IXFH230N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F1D820&compId=IXFH230N075T2.pdf?ci_sign=d8900541f87190d286851767bbbf7c7af6459ae7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO247-3; 59ns
Reverse recovery time: 59ns
Drain-source voltage: 75V
Drain current: 230A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 178nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.54 EUR
10+7.18 EUR
11+6.79 EUR
120+6.66 EUR
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IXTY1N80P IXTY1N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDBB5A9E329820&compId=IXTA(P%2CU%2CY)1N80P.pdf?ci_sign=4645dc89c6927a3efcc681682c407ac62438afa8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Case: TO252
On-state resistance: 14Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 42W
Features of semiconductor devices: standard power mosfet
Gate charge: 9nC
Reverse recovery time: 700ns
Produkt ist nicht verfügbar
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MCMA140P1600TA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EB69BB909ED18BF&compId=MCMA140P1600TA.pdf?ci_sign=b12199e01ae05027ecc8d6bac32e78da8a23126a pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
2+47.08 EUR
5+45.97 EUR
10+45.27 EUR
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MCMA140P1600TA-NI IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDF91B43CE06B7F40D6&compId=MCMA140P1600TA-NI.pdf?ci_sign=70902de132a96e720046b3fc07ec5015139e7f48 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; Ifmax: 220A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
Max. load current: 220A
Produkt ist nicht verfügbar
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MDMA140P1600TG IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C88667E205598BF&compId=MDMA140P1600TG.pdf?ci_sign=3579c69530a8903c3dd7c83b6ffeba86cd59c752 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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VUE22-12NO7 VUE22-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8896073AAE39C0C4&compId=VUE22-12NO7.pdf?ci_sign=26b20417a95d7d39b4b37d92c0b157bd49d6c9ae Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 24A; Ifsm: 40A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 24A
Max. forward impulse current: 40A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.92V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
auf Bestellung 13 Stücke:
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4+19.72 EUR
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VUE22-06NO7 VUE22-06NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88960436DB59E0C4&compId=VUE22-06NO7.pdf?ci_sign=d488fd843cac84f64e5b7f9061a3e09fabaf9d12 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 34A; Ifsm: 50A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 34A
Max. forward impulse current: 50A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.09V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IXTH04N300P3HV IXTH04N300P3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917AF820&compId=IXTH04N300P3HV.pdf?ci_sign=462da40c2776e8330cfe3a15d83a604a60b6a8ac Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us
Reverse recovery time: 1.1µs
Drain-source voltage: 3kV
Drain current: 0.4A
On-state resistance: 190Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 13nC
Kind of channel: enhancement
Mounting: THT
Case: TO247HV
Produkt ist nicht verfügbar
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DSSK80-0045B DSSK80-0045B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CC0079674618BF&compId=DSSK80-0045B.pdf?ci_sign=18030453aa42fb6213e900d9f31f7cdf3ee7de16 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 40Ax2; TO247-3; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 40A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.45V
Max. forward impulse current: 0.6kA
Power dissipation: 155W
Kind of package: tube
auf Bestellung 3 Stücke:
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3+23.84 EUR
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DSSK80-0008D DSSK80-0008D IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BEDEA2B3F1418BF&compId=DSSK80-0008D.pdf?ci_sign=6ee3a06b5068c30eef82cdb3258700677a6ed7fe Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40Ax2; TO247-3; Ufmax: 0.23V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.23V
Max. forward impulse current: 0.6kA
Power dissipation: 155W
Kind of package: tube
Produkt ist nicht verfügbar
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DSSK80-0025B DSSK80-0025B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CBF8E5D8D438BF&compId=DSSK80-0025B.pdf?ci_sign=c41bfa7314cb1d24bc212193a231da17410fd8f7 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 40Ax2; TO247-3; Ufmax: 0.39V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 25V
Load current: 40A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.39V
Max. forward impulse current: 0.6kA
Power dissipation: 155W
Kind of package: tube
Produkt ist nicht verfügbar
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CS45-16IO1 CS45-16IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C90DA181DE27&compId=CS45-08IO1-DTE.pdf?ci_sign=370091429d5995645cf0ec659bab53cef7de1ae0 pVersion=0046&contRep=ZT&docId=E1C0492FBC2D6FF1A6F5005056AB5A8F&compId=CS45-16IO1.pdf?ci_sign=50880bc4b954e45707319554f5d24fd02df256ec description Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.21 EUR
13+5.69 EUR
14+5.35 EUR
15+5.16 EUR
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CPC1998J CPC1998J IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9958FBBAE5D5078BF&compId=cpc1998.pdf?ci_sign=3f6932fbe3787e2750388d95ee237511f744fc66 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 150mA; 5000mA; max.240VAC; 1-phase
Type of relay: solid state
Control current max.: 150mA
Max. operating current: 5A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 20.88x19.91x5.03mm
Switching method: zero voltage switching
Insulation voltage: 2.5kV
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.07 EUR
7+10.48 EUR
8+9.91 EUR
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LF2304NTR LF2304NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F29789D15760CE&compId=LF2304NTR.pdf?ci_sign=f1044170d027d292a2dc7abf2e6e6f6bc457bf3f Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Supply voltage: 10...20V
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Produkt ist nicht verfügbar
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CLA60PD1200NA CLA60PD1200NA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89188AC1A1F8BF&compId=CLA60PD1200NA.pdf?ci_sign=8a1d155a6a91fc089fa0a68417874f3c7352585e Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: SOT227B
Max. forward voltage: 1.09V
Max. forward impulse current: 935A
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Threshold on-voltage: 0.79V
Max. load current: 94A
Gate current: 40/80mA
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
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MMO90-16io6 MMO90-16io6 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE91E3F6999A3700D5&compId=MMO90-16IO6.pdf?ci_sign=e29137af8795e6f7a6691cc1bdf75a444308fbee Category: Thyristor modules
Description: Module: thyristor; opposing; 600V; 41A; SOT227B; Ufmax: 1.43V; screw
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 0.6kV
Load current: 41A
Case: SOT227B
Max. forward voltage: 1.43V
Max. forward impulse current: 860A
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/200mA
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.92 EUR
3+35.56 EUR
5+34.53 EUR
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CLA110MB1200NA CLA110MB1200NA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF14CC06F2398BF&compId=CLA110MB1200NA.pdf?ci_sign=8ff423e678d1d339a3ca9cfba184e03ee39f4269 Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT227B
Max. forward voltage: 1.04V
Max. forward impulse current: 935A
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 40/80mA
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
3+25.14 EUR
5+24.17 EUR
Mindestbestellmenge: 3
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DSEP2X91-03A DSEP2X91-03A IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5B97D60E15FAA50&compId=DSEP2X91-03A-DTE.pdf?ci_sign=2598ba83b247f01b3d7354586c51ea5939025420 description Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 90A x2
Case: SOT227B
Max. forward voltage: 1.54V
Max. forward impulse current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: HiPerFRED™
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
2+41.54 EUR
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DSEP2X61-03A DSEP2X61-03A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C889CC97A9AD8BF&compId=DSEP2x61-03A.pdf?ci_sign=fefb71e7c146efb6bbde3c29fbc2ca054f68b484 description Category: Diode modules
Description: Module: diode; double independent; 300V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.11V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: HiPerFRED™
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
2+37.18 EUR
3+34.78 EUR
5+33.79 EUR
Mindestbestellmenge: 2
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IXBN75N170 IXBN75N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2D74FFDFA3820&compId=IXBN75N170.pdf?ci_sign=c30080eb6a1443654b906ca9270234eddb862b5e Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 75A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: high voltage
Technology: BiMOSFET™
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 680A
Power dissipation: 625W
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+114.07 EUR
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MCO150-16IO1 MCO150-16IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF25B90517B35EA&compId=MCO150-16IO1.pdf?ci_sign=46874172e95e49a2ec6ad9fcf27e90ddeba41775 Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 158A; SOT227B; screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 158A
Case: SOT227B
Max. forward voltage: 1.78V
Max. forward impulse current: 2.16kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IXBN75N170A IXBN75N170A IXYS 98938.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 42A
Pulsed collector current: 100A
Application: for UPS; motors
Power dissipation: 500W
Electrical mounting: screw
Mechanical mounting: screw
Technology: BiMOSFET™
Type of semiconductor module: IGBT
Case: SOT227B
Max. off-state voltage: 1.7kV
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2+62.46 EUR
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MWI75-12A8 IXYS MWI75-12A8.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 85A
Pulsed collector current: 150A
Application: motors
Power dissipation: 500W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT
Topology: IGBT three-phase bridge
Type of semiconductor module: IGBT
Case: E3-Pack
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGP12N120A3 IXGP12N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB6BEF0478F820&compId=IXGA(p%2Ch)12N120A3.pdf?ci_sign=7ff57f903aa71d4892f3c9c90fda1c4b6514c180 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 100W
Case: TO220-3
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Pulsed collector current: 60A
Turn-on time: 202ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 12A
Produkt ist nicht verfügbar
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IXGA12N120A3 IXGA12N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB6BEF0478F820&compId=IXGA(p%2Ch)12N120A3.pdf?ci_sign=7ff57f903aa71d4892f3c9c90fda1c4b6514c180 Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 100W
Case: TO263
Mounting: SMD
Gate charge: 20.4nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Pulsed collector current: 60A
Turn-on time: 202ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 12A
Produkt ist nicht verfügbar
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IXGH12N120A3 IXGH12N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB6BEF0478F820&compId=IXGA(p%2Ch)12N120A3.pdf?ci_sign=7ff57f903aa71d4892f3c9c90fda1c4b6514c180 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 100W
Case: TO247-3
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Pulsed collector current: 60A
Turn-on time: 202ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 12A
Produkt ist nicht verfügbar
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IXTT75N10L2 IXTT75N10L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993960D1A4DD498BF&compId=IXT_75N10L2.pdf?ci_sign=14d46f1640fe8dff3fd9c2e86627011d0edde846 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: Linear L2™
auf Bestellung 5 Stücke:
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5+14.3 EUR
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CLA50E1200TC-TUB CLA50E1200TC-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF06C1A1D9BB8BF&compId=CLA50E1200TC.pdf?ci_sign=b629e30eda934e1f86d73525caad02b28cb70d3d Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
auf Bestellung 117 Stücke:
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7+10.27 EUR
10+7.55 EUR
11+7.14 EUR
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CLA50E1200TC-TRL IXYS Littelfuse-Power-Semiconductors-CLA50E1200TC-Datasheet?assetguid=0a7ad2bc-21e4-400c-913e-65dfcb8907e4 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
Produkt ist nicht verfügbar
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CPC1150NTR CPC1150NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20F80C7&compId=CPC1150N.pdf?ci_sign=6c33409f6d640e230d2ef27a0b63d7a2c895247e Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXFT150N30X3HV IXFT150N30X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBD908A9A238BF&compId=IXF_150N30X3_HV.pdf?ci_sign=c02cea29174068e52cd342ee0467b4c4f54d34e5 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Case: TO268
Reverse recovery time: 167ns
Drain-source voltage: 300V
Drain current: 150A
On-state resistance: 8.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 254nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
4+21.65 EUR
10+20.82 EUR
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VHFD37-12IO1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6EF41935CA0C4&compId=VHFD37.pdf?ci_sign=6056112efac0b4a16be8fae12f15d363ee05895d
VHFD37-12IO1
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Gate current: 65mA
Features of semiconductor devices: field diodes; freewheelling diode
Leads dimensions: 2x0.5mm
Produkt ist nicht verfügbar
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DSI45-16A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB44881091F0143&compId=DSI45-16A.pdf?ci_sign=0605bc7a5e3664dd208c1e0a4410373628d8b886
DSI45-16A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Kind of package: tube
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
auf Bestellung 373 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.86 EUR
18+3.99 EUR
19+3.78 EUR
30+3.75 EUR
Mindestbestellmenge: 15
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MEE250-12DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MEE250-12DA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Case: Y4-M6
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.54V
Type of semiconductor module: diode
Load current: 260A
Semiconductor structure: double series
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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CPC1943G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81740C7&compId=CPC1943.pdf?ci_sign=a01e70cd2a1035fd2c83dd4b3dd11577a147baa4
CPC1943G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: THT
Operating temperature: -40...85°C
Switching method: zero voltage switching
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Insulation voltage: 3.75kV
auf Bestellung 133 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.21 EUR
12+6.16 EUR
13+5.82 EUR
50+5.63 EUR
100+5.59 EUR
Mindestbestellmenge: 8
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CPC1943GS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81740C7&compId=CPC1943.pdf?ci_sign=a01e70cd2a1035fd2c83dd4b3dd11577a147baa4
CPC1943GS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Switching method: zero voltage switching
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Insulation voltage: 3.75kV
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
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DSA20C45PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C91FD17A1DB8BF&compId=DSA20C45PB.pdf?ci_sign=7cdcf1c17ba6d046b85f0f92e7ac12b68cfe04db
DSA20C45PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220AB; Ufmax: 0.61V
Power dissipation: 45W
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 45V
Max. forward voltage: 0.61V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 260A
auf Bestellung 362 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
132+0.54 EUR
139+0.52 EUR
147+0.49 EUR
250+0.48 EUR
Mindestbestellmenge: 129
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DSA20C100PN pVersion=0046&contRep=ZT&docId=005056AB82531EE991C90C74951718BF&compId=DSA20C100PN.pdf?ci_sign=39704861a26cf68ccc6e55d0f47bc62fca68da11
DSA20C100PN
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.71V
Power dissipation: 35W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220FP
Max. off-state voltage: 100V
Max. forward voltage: 0.71V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.24kA
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.7 EUR
Mindestbestellmenge: 42
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DSA20C60PN pVersion=0046&contRep=ZT&docId=005056AB82531EE991C940C99465B8BF&compId=DSA20C60PN.pdf?ci_sign=f23f6f12d9e28e2df814647d5f8a3a155d95bfb1
DSA20C60PN
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.7V
Power dissipation: 35W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220FP
Max. off-state voltage: 60V
Max. forward voltage: 0.7V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.24kA
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
65+1.1 EUR
73+0.99 EUR
84+0.86 EUR
90+0.8 EUR
Mindestbestellmenge: 59
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IXFN48N60P description pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9735B5A4BF820&compId=IXFN48N60P.pdf?ci_sign=3767de0c252b66993db8e840b8859a54ca75ee30
IXFN48N60P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; Idm: 110A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 625W
Case: SOT227B
On-state resistance: 0.14Ω
Gate charge: 150nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Technology: HiPerFET™; PolarHV™
Gate-source voltage: ±40V
Pulsed drain current: 110A
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXFQ28N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285A2A90AE15820&compId=IXFH(Q)28N60P3.pdf?ci_sign=0f34ebb36ef205574a8cc03b1e646bbbf9a5d93c
IXFQ28N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFR48N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC58D820&compId=IXFR48N60P.pdf?ci_sign=ccd3cbc214a931f568a20e2a1944f812c5751f5a
IXFR48N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX48N60P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A94E9FB88C78BF&compId=IXF_48N60P.pdf?ci_sign=2d8decaa7bf5853333c30536e1424c18bf5cd01b
IXFX48N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 48A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHV™
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
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FMM22-06PF
FMM22-06PF
Hersteller: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 600V; 12A; Idm: 66A
Type of transistor: N-MOSFET x2
Power dissipation: 130W
Polarisation: unipolar
Kind of package: tube
Gate charge: 58nC
Technology: PolarHV™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 66A
Mounting: THT
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.35Ω
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+22.15 EUR
10+21.29 EUR
Mindestbestellmenge: 4
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IXTH1N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDC022763C7820&compId=IXTH(T)1N450HV.pdf?ci_sign=1a542cb69701b4bb55549a4f2857e06f4cbbbc22
IXTH1N450HV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 80Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1.75µs
Features of semiconductor devices: standard power mosfet
Gate charge: 46nC
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+45.35 EUR
10+44.83 EUR
Mindestbestellmenge: 2
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CPC1983YE pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49385343880C7&compId=CPC1983YE.pdf?ci_sign=974827daa00530c081d8f8338c456dd3b19928d6
CPC1983YE
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.600VAC
Operating temperature: -40...85°C
Case: SIP4
On-state resistance: 6Ω
Turn-on time: 5ms
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Kind of output: MOSFET
Insulation voltage: 4kV
Contacts configuration: SPST-NO
Max. operating current: 0.5A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.24 EUR
15+4.99 EUR
16+4.72 EUR
Mindestbestellmenge: 10
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IXTP1N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDBB5A9E329820&compId=IXTA(P%2CU%2CY)1N80P.pdf?ci_sign=4645dc89c6927a3efcc681682c407ac62438afa8
IXTP1N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO220AB; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Case: TO220AB
On-state resistance: 14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 42W
Features of semiconductor devices: standard power mosfet
Gate charge: 9nC
Reverse recovery time: 700ns
Produkt ist nicht verfügbar
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IXFP72N20X3M pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB6F7347C778BF&compId=IXFP72N20X3M.pdf?ci_sign=3600707d127237f42d9526b0662e3cbacddfbaab pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFP72N20X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 36W; TO220FP
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.43 EUR
15+4.79 EUR
17+4.22 EUR
18+3.99 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXFA7N100P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEC13C244BC98BF&compId=IXF_7N100P.pdf?ci_sign=098a71bb06e557089a0d1511de1a94a0bc177181
IXFA7N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 7A
On-state resistance: 1.9Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 47nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: SMD
Case: TO263
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.85 EUR
15+4.83 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXFH74N20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5AEB5963298BF&compId=IXF(V%2CH)74N20P(S).pdf?ci_sign=0f089991e74ed191755334448918e2eb4cb172ba
IXFH74N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO247-3
Reverse recovery time: 200ns
Drain-source voltage: 200V
Drain current: 74A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Gate charge: 107nC
Technology: HiPerFET™; PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.74 EUR
12+5.99 EUR
30+5.88 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFP72N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB72F794D618BF&compId=IXF_72N20X3.pdf?ci_sign=902d8e62addc73cd538be477ab29d6e14e9de703 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFP72N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO220AB
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.18 EUR
11+6.85 EUR
12+6.48 EUR
50+6.39 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXFH70N30Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D435564A4BB820&compId=IXFH(T)70N30Q3.pdf?ci_sign=0939f99f658b4d62edd06a74b1b6715b89a4207f
IXFH70N30Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO247-3
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Kind of package: tube
Gate charge: 98nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+17.07 EUR
7+11.13 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFH76N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D41BF38A751820&compId=IXFA(H%2CP)76N15T2.pdf?ci_sign=e58b954c14aed23e6b59d6e696317db032e28994
IXFH76N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO247-3; 69ns
Reverse recovery time: 69ns
Drain-source voltage: 150V
Drain current: 76A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 350W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 97nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.68 EUR
14+5.16 EUR
15+4.88 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ72N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB72F794D618BF&compId=IXF_72N20X3.pdf?ci_sign=902d8e62addc73cd538be477ab29d6e14e9de703 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFQ72N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO3P
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.65 EUR
14+5.11 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXFA72N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB72F794D618BF&compId=IXF_72N20X3.pdf?ci_sign=902d8e62addc73cd538be477ab29d6e14e9de703 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFA72N20X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO263
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.07 EUR
11+6.52 EUR
12+6.16 EUR
50+5.92 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXFH170N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D53B40079AF820&compId=IXFH(K%2CT)170N25X3_HV.pdf?ci_sign=ea75d9eee3b336dc745cd69a3f9d9bb3eb1a5cef
IXFH170N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO247-3; 140ns
Reverse recovery time: 140ns
Drain-source voltage: 250V
Drain current: 170A
On-state resistance: 7.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 0.19µC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.35 EUR
5+17.35 EUR
30+16.99 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFK170N10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA4D451E02B38BF&compId=IXFH170N10P_IXFK170N10P.pdf?ci_sign=8e0c57b7145cd2d707e91251170b8da9af42fcd8
IXFK170N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Reverse recovery time: 120ns
Drain-source voltage: 100V
Drain current: 170A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 715W
Polarisation: unipolar
Kind of package: tube
Gate charge: 198nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO264
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.85 EUR
6+12.58 EUR
7+11.9 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFB170N30P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED466DF8CDA6A18&compId=IXFB170N30P.pdf?ci_sign=d2e1603ab2b4ff6c3b3926b7ca4a5bff751cbdb1
IXFB170N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™
Reverse recovery time: 200ns
Drain-source voltage: 300V
Drain current: 170A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 258nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: PLUS264™
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFA230N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD0BBC1F507820&compId=IXFA(P)230N075T2.pdf?ci_sign=a193bb6c937ab8a381de2b728ab686af5cf3de01
IXFA230N075T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns
Reverse recovery time: 59ns
Drain-source voltage: 75V
Drain current: 230A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 178nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXFX220N17T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD21B57C17D820&compId=IXFK(X)220N17T2.pdf?ci_sign=05649ffdd8b9bb30b334fa0980d890b6e4de392d
IXFX220N17T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Drain-source voltage: 170V
Drain current: 220A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 500nC
Kind of channel: enhancement
Mounting: THT
Case: PLUS247™
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.03 EUR
6+12.68 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFH230N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F1D820&compId=IXFH230N075T2.pdf?ci_sign=d8900541f87190d286851767bbbf7c7af6459ae7
IXFH230N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO247-3; 59ns
Reverse recovery time: 59ns
Drain-source voltage: 75V
Drain current: 230A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 178nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.54 EUR
10+7.18 EUR
11+6.79 EUR
120+6.66 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTY1N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDBB5A9E329820&compId=IXTA(P%2CU%2CY)1N80P.pdf?ci_sign=4645dc89c6927a3efcc681682c407ac62438afa8
IXTY1N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Case: TO252
On-state resistance: 14Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 42W
Features of semiconductor devices: standard power mosfet
Gate charge: 9nC
Reverse recovery time: 700ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCMA140P1600TA pVersion=0046&contRep=ZT&docId=005056AB82531EE98EB69BB909ED18BF&compId=MCMA140P1600TA.pdf?ci_sign=b12199e01ae05027ecc8d6bac32e78da8a23126a pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+47.08 EUR
5+45.97 EUR
10+45.27 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MCMA140P1600TA-NI pVersion=0046&contRep=ZT&docId=005056AB281E1EDF91B43CE06B7F40D6&compId=MCMA140P1600TA-NI.pdf?ci_sign=70902de132a96e720046b3fc07ec5015139e7f48 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; Ifmax: 220A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
Max. load current: 220A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDMA140P1600TG pVersion=0046&contRep=ZT&docId=005056AB82531EE98C88667E205598BF&compId=MDMA140P1600TG.pdf?ci_sign=3579c69530a8903c3dd7c83b6ffeba86cd59c752 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VUE22-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8896073AAE39C0C4&compId=VUE22-12NO7.pdf?ci_sign=26b20417a95d7d39b4b37d92c0b157bd49d6c9ae
VUE22-12NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 24A; Ifsm: 40A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 24A
Max. forward impulse current: 40A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.92V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.72 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
VUE22-06NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88960436DB59E0C4&compId=VUE22-06NO7.pdf?ci_sign=d488fd843cac84f64e5b7f9061a3e09fabaf9d12
VUE22-06NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 34A; Ifsm: 50A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 34A
Max. forward impulse current: 50A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.09V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTH04N300P3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917AF820&compId=IXTH04N300P3HV.pdf?ci_sign=462da40c2776e8330cfe3a15d83a604a60b6a8ac
IXTH04N300P3HV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us
Reverse recovery time: 1.1µs
Drain-source voltage: 3kV
Drain current: 0.4A
On-state resistance: 190Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 13nC
Kind of channel: enhancement
Mounting: THT
Case: TO247HV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSSK80-0045B pVersion=0046&contRep=ZT&docId=005056AB82531EE991CC0079674618BF&compId=DSSK80-0045B.pdf?ci_sign=18030453aa42fb6213e900d9f31f7cdf3ee7de16
DSSK80-0045B
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 40Ax2; TO247-3; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 40A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.45V
Max. forward impulse current: 0.6kA
Power dissipation: 155W
Kind of package: tube
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DSSK80-0008D pVersion=0046&contRep=ZT&docId=005056AB82531EE98BEDEA2B3F1418BF&compId=DSSK80-0008D.pdf?ci_sign=6ee3a06b5068c30eef82cdb3258700677a6ed7fe
DSSK80-0008D
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40Ax2; TO247-3; Ufmax: 0.23V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.23V
Max. forward impulse current: 0.6kA
Power dissipation: 155W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSSK80-0025B pVersion=0046&contRep=ZT&docId=005056AB82531EE991CBF8E5D8D438BF&compId=DSSK80-0025B.pdf?ci_sign=c41bfa7314cb1d24bc212193a231da17410fd8f7
DSSK80-0025B
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 40Ax2; TO247-3; Ufmax: 0.39V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 25V
Load current: 40A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.39V
Max. forward impulse current: 0.6kA
Power dissipation: 155W
Kind of package: tube
Produkt ist nicht verfügbar
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CS45-16IO1 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C90DA181DE27&compId=CS45-08IO1-DTE.pdf?ci_sign=370091429d5995645cf0ec659bab53cef7de1ae0 pVersion=0046&contRep=ZT&docId=E1C0492FBC2D6FF1A6F5005056AB5A8F&compId=CS45-16IO1.pdf?ci_sign=50880bc4b954e45707319554f5d24fd02df256ec
CS45-16IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.21 EUR
13+5.69 EUR
14+5.35 EUR
15+5.16 EUR
Mindestbestellmenge: 10
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CPC1998J pVersion=0046&contRep=ZT&docId=005056AB82531EE9958FBBAE5D5078BF&compId=cpc1998.pdf?ci_sign=3f6932fbe3787e2750388d95ee237511f744fc66
CPC1998J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 150mA; 5000mA; max.240VAC; 1-phase
Type of relay: solid state
Control current max.: 150mA
Max. operating current: 5A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 20.88x19.91x5.03mm
Switching method: zero voltage switching
Insulation voltage: 2.5kV
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.07 EUR
7+10.48 EUR
8+9.91 EUR
Mindestbestellmenge: 6
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LF2304NTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F29789D15760CE&compId=LF2304NTR.pdf?ci_sign=f1044170d027d292a2dc7abf2e6e6f6bc457bf3f
LF2304NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Supply voltage: 10...20V
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Produkt ist nicht verfügbar
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CLA60PD1200NA pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89188AC1A1F8BF&compId=CLA60PD1200NA.pdf?ci_sign=8a1d155a6a91fc089fa0a68417874f3c7352585e
CLA60PD1200NA
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: SOT227B
Max. forward voltage: 1.09V
Max. forward impulse current: 935A
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Threshold on-voltage: 0.79V
Max. load current: 94A
Gate current: 40/80mA
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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MMO90-16io6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE91E3F6999A3700D5&compId=MMO90-16IO6.pdf?ci_sign=e29137af8795e6f7a6691cc1bdf75a444308fbee
MMO90-16io6
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 600V; 41A; SOT227B; Ufmax: 1.43V; screw
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 0.6kV
Load current: 41A
Case: SOT227B
Max. forward voltage: 1.43V
Max. forward impulse current: 860A
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/200mA
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.92 EUR
3+35.56 EUR
5+34.53 EUR
Mindestbestellmenge: 2
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CLA110MB1200NA pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF14CC06F2398BF&compId=CLA110MB1200NA.pdf?ci_sign=8ff423e678d1d339a3ca9cfba184e03ee39f4269
CLA110MB1200NA
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT227B
Max. forward voltage: 1.04V
Max. forward impulse current: 935A
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 40/80mA
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+25.14 EUR
5+24.17 EUR
Mindestbestellmenge: 3
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DSEP2X91-03A description pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5B97D60E15FAA50&compId=DSEP2X91-03A-DTE.pdf?ci_sign=2598ba83b247f01b3d7354586c51ea5939025420
DSEP2X91-03A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 90A x2
Case: SOT227B
Max. forward voltage: 1.54V
Max. forward impulse current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: HiPerFRED™
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+41.54 EUR
Mindestbestellmenge: 2
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DSEP2X61-03A description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C889CC97A9AD8BF&compId=DSEP2x61-03A.pdf?ci_sign=fefb71e7c146efb6bbde3c29fbc2ca054f68b484
DSEP2X61-03A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.11V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: HiPerFRED™
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+37.18 EUR
3+34.78 EUR
5+33.79 EUR
Mindestbestellmenge: 2
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IXBN75N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2D74FFDFA3820&compId=IXBN75N170.pdf?ci_sign=c30080eb6a1443654b906ca9270234eddb862b5e
IXBN75N170
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 75A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: high voltage
Technology: BiMOSFET™
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 680A
Power dissipation: 625W
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+114.07 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MCO150-16IO1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF25B90517B35EA&compId=MCO150-16IO1.pdf?ci_sign=46874172e95e49a2ec6ad9fcf27e90ddeba41775
MCO150-16IO1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 158A; SOT227B; screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 158A
Case: SOT227B
Max. forward voltage: 1.78V
Max. forward impulse current: 2.16kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXBN75N170A 98938.pdf
IXBN75N170A
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 42A
Pulsed collector current: 100A
Application: for UPS; motors
Power dissipation: 500W
Electrical mounting: screw
Mechanical mounting: screw
Technology: BiMOSFET™
Type of semiconductor module: IGBT
Case: SOT227B
Max. off-state voltage: 1.7kV
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+62.46 EUR
Mindestbestellmenge: 2
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MWI75-12A8 MWI75-12A8.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 85A
Pulsed collector current: 150A
Application: motors
Power dissipation: 500W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT
Topology: IGBT three-phase bridge
Type of semiconductor module: IGBT
Case: E3-Pack
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGP12N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB6BEF0478F820&compId=IXGA(p%2Ch)12N120A3.pdf?ci_sign=7ff57f903aa71d4892f3c9c90fda1c4b6514c180
IXGP12N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 100W
Case: TO220-3
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Pulsed collector current: 60A
Turn-on time: 202ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 12A
Produkt ist nicht verfügbar
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IXGA12N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB6BEF0478F820&compId=IXGA(p%2Ch)12N120A3.pdf?ci_sign=7ff57f903aa71d4892f3c9c90fda1c4b6514c180
IXGA12N120A3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 100W
Case: TO263
Mounting: SMD
Gate charge: 20.4nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Pulsed collector current: 60A
Turn-on time: 202ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 12A
Produkt ist nicht verfügbar
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IXGH12N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB6BEF0478F820&compId=IXGA(p%2Ch)12N120A3.pdf?ci_sign=7ff57f903aa71d4892f3c9c90fda1c4b6514c180
IXGH12N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 100W
Case: TO247-3
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Pulsed collector current: 60A
Turn-on time: 202ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 12A
Produkt ist nicht verfügbar
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IXTT75N10L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993960D1A4DD498BF&compId=IXT_75N10L2.pdf?ci_sign=14d46f1640fe8dff3fd9c2e86627011d0edde846
IXTT75N10L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: Linear L2™
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
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CLA50E1200TC-TUB pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF06C1A1D9BB8BF&compId=CLA50E1200TC.pdf?ci_sign=b629e30eda934e1f86d73525caad02b28cb70d3d
CLA50E1200TC-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.27 EUR
10+7.55 EUR
11+7.14 EUR
Mindestbestellmenge: 7
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CLA50E1200TC-TRL Littelfuse-Power-Semiconductors-CLA50E1200TC-Datasheet?assetguid=0a7ad2bc-21e4-400c-913e-65dfcb8907e4
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
Produkt ist nicht verfügbar
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CPC1150NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20F80C7&compId=CPC1150N.pdf?ci_sign=6c33409f6d640e230d2ef27a0b63d7a2c895247e
CPC1150NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXFT150N30X3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBD908A9A238BF&compId=IXF_150N30X3_HV.pdf?ci_sign=c02cea29174068e52cd342ee0467b4c4f54d34e5 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFT150N30X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Case: TO268
Reverse recovery time: 167ns
Drain-source voltage: 300V
Drain current: 150A
On-state resistance: 8.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 254nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.65 EUR
10+20.82 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
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