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VUO62-14NO7 IXYS VUO62-14NO7.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 60A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.4kV
Load current: 60A
Max. forward impulse current: 0.55kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.07V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
Produkt ist nicht verfügbar
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VUO62-16NO7 IXYS VUO62-16NO7.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 0.55kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.07V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXTT140P10T IXTT140P10T IXYS IXT_140P10T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; TO268
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO268
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
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DSSK60-0045A DSSK60-0045A IXYS DSSK60-0045A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Power dissipation: 135W
Max. forward voltage: 0.6V
Max. forward impulse current: 0.5kA
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DSB60C45PB DSB60C45PB IXYS DSB60C45PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Power dissipation: 145W
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.6V
Max. forward impulse current: 490A
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DSSK50-01A DSSK50-01A IXYS DSSK50-01A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.65V
Max. forward impulse current: 0.45kA
Power dissipation: 135W
Kind of package: tube
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DSSK50-015A DSSK50-015A IXYS DSSK50-015A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; TO247-3; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.68V
Max. forward impulse current: 0.45kA
Power dissipation: 135W
Kind of package: tube
auf Bestellung 45 Stücke:
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14+5.23 EUR
15+4.95 EUR
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DSSK50-0025B DSSK50-0025B IXYS DSSK50-0025B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25Ax2; TO247-3; Ufmax: 0.42V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.42V
Max. forward impulse current: 330A
Power dissipation: 90W
Kind of package: tube
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LCB110 LCB110 IXYS LCB110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
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LCB717 LCB717 IXYS LCB717.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase; current source
Switched voltage: max. 30V AC; max. 30V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 0.3Ω
Turn-on time: 2ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 1.5A
Type of relay: solid state
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CPC1333GR CPC1333GR IXYS CPC1333.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP4
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 3ms
Body dimensions: 4.57x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 5kV
Max. operating current: 0.13A
Type of relay: solid state
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IXFH26N50 IXFH26N50 IXYS 91525.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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FMM22-06PF FMM22-06PF IXYS Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 600V; 12A; Idm: 66A
Type of transistor: N-MOSFET x2
Power dissipation: 130W
Polarisation: unipolar
Kind of package: tube
Gate charge: 58nC
Technology: PolarHV™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 66A
Mounting: THT
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.35Ω
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3+24.00 EUR
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IXTA260N055T2 IXTA260N055T2 IXYS IXTA(P)260N055T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO263
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
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IXTA260N055T2-7 IXTA260N055T2-7 IXYS IXTA260N055T2-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
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IXFR20N80P IXFR20N80P IXYS IXFR20N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 800V
Drain current: 10A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Gate charge: 86nC
Kind of channel: enhancement
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6+14.26 EUR
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CPC1540GSTR IXYS CPC1540.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
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CPC1540GS CPC1540GS IXYS CPC1540.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
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CPC1560GS CPC1560GS IXYS CPC1560.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 5.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 0.1ms
Turn-off time: 400µs
Kind of output: MOSFET
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CPC1560GSTR IXYS CPC1560.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 5.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 0.1ms
Turn-off time: 400µs
Kind of output: MOSFET
Produkt ist nicht verfügbar
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MCMA120UJ1800ED MCMA120UJ1800ED IXYS MCMA120UJ1800ED.pdf Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.8kV; If: 120A; E2-Pack
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.36V
Load current: 120A
Gate current: 70/150mA
Max. forward impulse current: 0.5kA
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Features of semiconductor devices: freewheelling diode
Type of bridge rectifier: half-controlled
Case: E2-Pack
auf Bestellung 6 Stücke:
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1+95.12 EUR
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CPC1964B CPC1964B IXYS CPC1964B.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Mounting: SMT
Case: SO8
Produkt ist nicht verfügbar
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CPC1964BX6 CPC1964BX6 IXYS CPC1964BX6.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Mounting: SMT
Case: SO8
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IXFR16N120P IXFR16N120P IXYS IXFR16N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 230W; ISOPLUS247™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Type of transistor: N-MOSFET
Power dissipation: 230W
Kind of package: tube
Gate charge: 0.12µC
Kind of channel: enhancement
Mounting: THT
Case: ISOPLUS247™
auf Bestellung 10 Stücke:
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4+22.04 EUR
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IXFL100N50P IXFL100N50P IXYS IXFL100N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 68A; 625W; ISOPLUS264™
Drain-source voltage: 500V
Drain current: 68A
Case: ISOPLUS264™
Polarisation: unipolar
On-state resistance: 52mΩ
Power dissipation: 625W
Kind of channel: enhancement
Gate charge: 240nC
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
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IXFN100N50P IXFN100N50P IXYS 99497.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 75A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 250A
Power dissipation: 1.04kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXFB100N50P IXFB100N50P IXYS IXFB100N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Drain-source voltage: 500V
Drain current: 100A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 49mΩ
Power dissipation: 1890W
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
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FMM22-05PF FMM22-05PF IXYS Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 500V; 13A; Idm: 55A
Mounting: THT
Power dissipation: 132W
Polarisation: unipolar
Kind of package: tube
Gate charge: 50nC
Technology: PolarHV™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 55A
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 13A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET x2
auf Bestellung 23 Stücke:
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4+21.96 EUR
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IX4310N IX4310N IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Kind of package: tube
Output current: -2...2A
Number of channels: 2
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 5...24V
auf Bestellung 1672 Stücke:
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38+1.90 EUR
62+1.16 EUR
73+0.98 EUR
125+0.57 EUR
132+0.54 EUR
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CPC1302GSTR CPC1302GSTR IXYS CPC1302.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
CTR@If: 1000-8000%@1mA
Trigger current: 50mA
Slew rate: 0.25V/μs
Type of optocoupler: optocoupler
Mounting: SMD
Max. off-state voltage: 5V
Turn-on time: 1µs
Turn-off time: 80µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
auf Bestellung 545 Stücke:
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21+3.43 EUR
35+2.04 EUR
38+1.93 EUR
500+1.86 EUR
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CPC1302G CPC1302G IXYS CPC1302.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
CTR@If: 1000-8000%@1mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP8
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
auf Bestellung 388 Stücke:
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21+3.49 EUR
36+2.03 EUR
38+1.92 EUR
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IXTP48N20T IXTP48N20T IXYS IXTA(P,Q)48N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 130ns
auf Bestellung 251 Stücke:
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18+4.15 EUR
20+3.72 EUR
23+3.15 EUR
25+2.97 EUR
50+2.96 EUR
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IXFN300N20X3 IXFN300N20X3 IXYS IXFN300N20X3.pdf 200VProductBrief.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 695W
Case: SOT227B
On-state resistance: 3.5mΩ
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 172ns
Pulsed drain current: 700A
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
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IXTN110N20L2 IXTN110N20L2 IXYS IXTN110N20L2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 500nC
Technology: Linear L2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 275A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 420ns
Drain-source voltage: 200V
Drain current: 100A
On-state resistance: 24mΩ
Power dissipation: 735W
Polarisation: unipolar
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IXTH1N200P3HV IXTH1N200P3HV IXYS IXTA(H)1N200P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247HV
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
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IXTK110N20L2 IXTK110N20L2 IXYS IXT_110N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
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IXTQ60N20L2 IXTQ60N20L2 IXYS IXTH(T,Q)60N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO3P
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
Produkt ist nicht verfügbar
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IXTT3N200P3HV IXTT3N200P3HV IXYS IXTH(T)3N200P3HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 3A; 520W; TO268HV; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 3A
Power dissipation: 520W
Case: TO268HV
On-state resistance:
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
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IXTT80N20L IXTT80N20L IXYS IXTH(T)80N20L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO268
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXTH80N20L IXTH80N20L IXYS IXTH(T)80N20L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
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IXTA1N200P3HV IXTA1N200P3HV IXYS IXTA(H)1N200P3HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 40Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
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IXTH3N200P3HV IXTH3N200P3HV IXYS IXTH(T)3N200P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 3A; 520W; TO247HV; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 3A
Power dissipation: 520W
Case: TO247HV
On-state resistance:
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
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IXLF19N250A IXLF19N250A IXYS IXLF19N250A.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 19A; 250W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 19A
Power dissipation: 250W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 0.6µs
Features of semiconductor devices: high voltage
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PLA194S PLA194S IXYS PLA194.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 2ms
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DSEC60-06A DSEC60-06A IXYS Littelfuse-Power-Semiconductors-DSEC60-06A-Datasheet?assetguid=6df7d9d0-4860-43a3-b1da-df3589182aec Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 1.6V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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LAA100P LAA100P IXYS LAA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
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IXFT120N15P IXFT120N15P IXYS IXF_120N15P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO268
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHT™
Gate-source voltage: ±20V
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IXTP32N65X IXTP32N65X IXYS IXTH(P,Q)32N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
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IXTP32N65XM IXTP32N65XM IXYS IXTP32N65XM.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 78W; TO220FP; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 78W
Case: TO220FP
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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OMA160 OMA160 IXYS OMA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 100Ω
Turn-on time: 125µs
Turn-off time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
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CPC1510GSTR IXYS CPC1510.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
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LAA110PL LAA110PL IXYS LAA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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LAA110S LAA110S IXYS LAA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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LAA110 LAA110 IXYS LAA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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LBA110 LBA110 IXYS littelfuse-integrated-circuits-lba110-datasheet?assetguid=5197d7d9-edb1-4128-af0b-ede0a7f87ed0 description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
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LBA110S LBA110S IXYS LBA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
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LCC110S LCC110S IXYS lcc110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Turn-on time: 4ms
Insulation voltage: 3.75kV
On-state resistance: 35Ω
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-off time: 4ms
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LBB110 LBB110 IXYS LBB110.pdf description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
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PLA110 PLA110 IXYS pla110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: THT
On-state resistance: 22Ω
Turn-on time: 1ms
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PLA110S PLA110S IXYS PLA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: SMT
On-state resistance: 22Ω
Turn-on time: 1ms
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VUO62-14NO7 VUO62-14NO7.pdf
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 60A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.4kV
Load current: 60A
Max. forward impulse current: 0.55kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.07V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
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VUO62-16NO7 VUO62-16NO7.pdf
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 0.55kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.07V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
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IXTT140P10T IXT_140P10T.pdf
IXTT140P10T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; TO268
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO268
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
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DSSK60-0045A DSSK60-0045A.pdf
DSSK60-0045A
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Power dissipation: 135W
Max. forward voltage: 0.6V
Max. forward impulse current: 0.5kA
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DSB60C45PB DSB60C45PB.pdf
DSB60C45PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Power dissipation: 145W
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.6V
Max. forward impulse current: 490A
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DSSK50-01A DSSK50-01A.pdf
DSSK50-01A
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.65V
Max. forward impulse current: 0.45kA
Power dissipation: 135W
Kind of package: tube
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.26 EUR
13+5.53 EUR
14+5.11 EUR
Mindestbestellmenge: 12
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DSSK50-015A DSSK50-015A.pdf
DSSK50-015A
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; TO247-3; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.68V
Max. forward impulse current: 0.45kA
Power dissipation: 135W
Kind of package: tube
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.58 EUR
13+5.82 EUR
14+5.23 EUR
15+4.95 EUR
30+4.86 EUR
Mindestbestellmenge: 11
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DSSK50-0025B DSSK50-0025B.pdf
DSSK50-0025B
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25Ax2; TO247-3; Ufmax: 0.42V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.42V
Max. forward impulse current: 330A
Power dissipation: 90W
Kind of package: tube
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.62 EUR
18+4.16 EUR
22+3.32 EUR
23+3.13 EUR
Mindestbestellmenge: 16
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LCB110 LCB110.pdf
LCB110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.10 EUR
28+2.60 EUR
30+2.46 EUR
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LCB717 LCB717.pdf
LCB717
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase; current source
Switched voltage: max. 30V AC; max. 30V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 0.3Ω
Turn-on time: 2ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 1.5A
Type of relay: solid state
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.42 EUR
13+5.82 EUR
14+5.49 EUR
Mindestbestellmenge: 9
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CPC1333GR CPC1333.pdf
CPC1333GR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP4
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 3ms
Body dimensions: 4.57x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 5kV
Max. operating current: 0.13A
Type of relay: solid state
auf Bestellung 231 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.83 EUR
41+1.76 EUR
44+1.66 EUR
Mindestbestellmenge: 26
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IXFH26N50 91525.pdf
IXFH26N50
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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FMM22-06PF
FMM22-06PF
Hersteller: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 600V; 12A; Idm: 66A
Type of transistor: N-MOSFET x2
Power dissipation: 130W
Polarisation: unipolar
Kind of package: tube
Gate charge: 58nC
Technology: PolarHV™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 66A
Mounting: THT
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.35Ω
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.00 EUR
Mindestbestellmenge: 3
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IXTA260N055T2 IXTA(P)260N055T2.pdf
IXTA260N055T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO263
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
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IXTA260N055T2-7 IXTA260N055T2-7.pdf
IXTA260N055T2-7
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
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IXFR20N80P IXFR20N80P.pdf
IXFR20N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 800V
Drain current: 10A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Gate charge: 86nC
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.26 EUR
8+9.64 EUR
Mindestbestellmenge: 6
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CPC1540GSTR CPC1540.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1540GS CPC1540.pdf
CPC1540GS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1560GS CPC1560.pdf
CPC1560GS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 5.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 0.1ms
Turn-off time: 400µs
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1560GSTR CPC1560.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 5.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 0.1ms
Turn-off time: 400µs
Kind of output: MOSFET
Produkt ist nicht verfügbar
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MCMA120UJ1800ED MCMA120UJ1800ED.pdf
MCMA120UJ1800ED
Hersteller: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.8kV; If: 120A; E2-Pack
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.36V
Load current: 120A
Gate current: 70/150mA
Max. forward impulse current: 0.5kA
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Features of semiconductor devices: freewheelling diode
Type of bridge rectifier: half-controlled
Case: E2-Pack
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+95.12 EUR
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CPC1964B CPC1964B.pdf
CPC1964B
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Mounting: SMT
Case: SO8
Produkt ist nicht verfügbar
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CPC1964BX6 CPC1964BX6.pdf
CPC1964BX6
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Mounting: SMT
Case: SO8
Produkt ist nicht verfügbar
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IXFR16N120P IXFR16N120P.pdf
IXFR16N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 230W; ISOPLUS247™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Type of transistor: N-MOSFET
Power dissipation: 230W
Kind of package: tube
Gate charge: 0.12µC
Kind of channel: enhancement
Mounting: THT
Case: ISOPLUS247™
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+22.04 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFL100N50P IXFL100N50P.pdf
IXFL100N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 68A; 625W; ISOPLUS264™
Drain-source voltage: 500V
Drain current: 68A
Case: ISOPLUS264™
Polarisation: unipolar
On-state resistance: 52mΩ
Power dissipation: 625W
Kind of channel: enhancement
Gate charge: 240nC
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXFN100N50P description 99497.pdf
IXFN100N50P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 75A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 250A
Power dissipation: 1.04kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFB100N50P IXFB100N50P.pdf
IXFB100N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Drain-source voltage: 500V
Drain current: 100A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 49mΩ
Power dissipation: 1890W
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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FMM22-05PF
FMM22-05PF
Hersteller: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 500V; 13A; Idm: 55A
Mounting: THT
Power dissipation: 132W
Polarisation: unipolar
Kind of package: tube
Gate charge: 50nC
Technology: PolarHV™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 55A
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 13A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET x2
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.96 EUR
Mindestbestellmenge: 4
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IX4310N
IX4310N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Kind of package: tube
Output current: -2...2A
Number of channels: 2
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 5...24V
auf Bestellung 1672 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.90 EUR
62+1.16 EUR
73+0.98 EUR
125+0.57 EUR
132+0.54 EUR
Mindestbestellmenge: 38
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CPC1302GSTR CPC1302.pdf
CPC1302GSTR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
CTR@If: 1000-8000%@1mA
Trigger current: 50mA
Slew rate: 0.25V/μs
Type of optocoupler: optocoupler
Mounting: SMD
Max. off-state voltage: 5V
Turn-on time: 1µs
Turn-off time: 80µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
auf Bestellung 545 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.43 EUR
35+2.04 EUR
38+1.93 EUR
500+1.86 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
CPC1302G CPC1302.pdf
CPC1302G
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
CTR@If: 1000-8000%@1mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP8
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
auf Bestellung 388 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.49 EUR
36+2.03 EUR
38+1.92 EUR
Mindestbestellmenge: 21
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IXTP48N20T IXTA(P,Q)48N20T.pdf
IXTP48N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 130ns
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.15 EUR
20+3.72 EUR
23+3.15 EUR
25+2.97 EUR
50+2.96 EUR
Mindestbestellmenge: 18
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IXFN300N20X3 IXFN300N20X3.pdf 200VProductBrief.pdf
IXFN300N20X3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 695W
Case: SOT227B
On-state resistance: 3.5mΩ
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 172ns
Pulsed drain current: 700A
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
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IXTN110N20L2 IXTN110N20L2.pdf
IXTN110N20L2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 500nC
Technology: Linear L2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 275A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 420ns
Drain-source voltage: 200V
Drain current: 100A
On-state resistance: 24mΩ
Power dissipation: 735W
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXTH1N200P3HV IXTA(H)1N200P3HV.pdf
IXTH1N200P3HV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247HV
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
Produkt ist nicht verfügbar
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IXTK110N20L2 IXT_110N20L2.pdf
IXTK110N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
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IXTQ60N20L2 IXTH(T,Q)60N20L2.pdf
IXTQ60N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO3P
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
Produkt ist nicht verfügbar
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IXTT3N200P3HV IXTH(T)3N200P3HV.pdf
IXTT3N200P3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 3A; 520W; TO268HV; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 3A
Power dissipation: 520W
Case: TO268HV
On-state resistance:
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
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IXTT80N20L IXTH(T)80N20L.pdf
IXTT80N20L
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO268
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXTH80N20L IXTH(T)80N20L.pdf
IXTH80N20L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXTA1N200P3HV IXTA(H)1N200P3HV.pdf
IXTA1N200P3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 40Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
Produkt ist nicht verfügbar
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IXTH3N200P3HV IXTH(T)3N200P3HV.pdf
IXTH3N200P3HV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 3A; 520W; TO247HV; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 3A
Power dissipation: 520W
Case: TO247HV
On-state resistance:
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
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IXLF19N250A IXLF19N250A.pdf
IXLF19N250A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 19A; 250W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 19A
Power dissipation: 250W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 0.6µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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PLA194S PLA194.pdf
PLA194S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 2ms
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.56 EUR
24+3.02 EUR
25+2.86 EUR
Mindestbestellmenge: 16
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DSEC60-06A Littelfuse-Power-Semiconductors-DSEC60-06A-Datasheet?assetguid=6df7d9d0-4860-43a3-b1da-df3589182aec
DSEC60-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 1.6V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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LAA100P LAA100.pdf
LAA100P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
auf Bestellung 6 Stücke:
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Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
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IXFT120N15P IXF_120N15P.pdf
IXFT120N15P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO268
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHT™
Gate-source voltage: ±20V
auf Bestellung 30 Stücke:
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Anzahl Preis
6+13.54 EUR
9+8.41 EUR
Mindestbestellmenge: 6
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IXTP32N65X IXTH(P,Q)32N65X.pdf
IXTP32N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTP32N65XM IXTP32N65XM.pdf
IXTP32N65XM
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 78W; TO220FP; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 78W
Case: TO220FP
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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OMA160 OMA160.pdf
OMA160
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 100Ω
Turn-on time: 125µs
Turn-off time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.85 EUR
25+2.96 EUR
26+2.80 EUR
Mindestbestellmenge: 13
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CPC1510GSTR CPC1510.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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LAA110PL LAA110L.pdf
LAA110PL
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.72 EUR
17+4.30 EUR
18+4.08 EUR
Mindestbestellmenge: 13
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LAA110S LAA110.pdf
LAA110S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.16 EUR
18+4.19 EUR
19+3.96 EUR
Mindestbestellmenge: 10
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LAA110 LAA110.pdf
LAA110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
auf Bestellung 231 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.76 EUR
18+4.19 EUR
19+3.96 EUR
Mindestbestellmenge: 10
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LBA110 description littelfuse-integrated-circuits-lba110-datasheet?assetguid=5197d7d9-edb1-4128-af0b-ede0a7f87ed0
LBA110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
auf Bestellung 2 Stücke:
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Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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LBA110S LBA110.pdf
LBA110S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.45 EUR
17+4.38 EUR
18+4.13 EUR
Mindestbestellmenge: 8
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LCC110S lcc110.pdf
LCC110S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Turn-on time: 4ms
Insulation voltage: 3.75kV
On-state resistance: 35Ω
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-off time: 4ms
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.97 EUR
18+4.16 EUR
19+3.93 EUR
Mindestbestellmenge: 8
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LBB110 description LBB110.pdf
LBB110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.22 EUR
15+4.95 EUR
16+4.68 EUR
Mindestbestellmenge: 10
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PLA110 pla110.pdf
PLA110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: THT
On-state resistance: 22Ω
Turn-on time: 1ms
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.43 EUR
22+3.36 EUR
23+3.17 EUR
Mindestbestellmenge: 14
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PLA110S PLA110.pdf
PLA110S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: SMT
On-state resistance: 22Ω
Turn-on time: 1ms
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.00 EUR
21+3.42 EUR
23+3.23 EUR
Mindestbestellmenge: 15
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