Produkte > IXYS > Alle Produkte des Herstellers IXYS (18023) > Seite 293 nach 301

Wählen Sie Seite:   [  << Vorherige Seite ]  1 30 60 90 120 150 180 210 240 270 288 289 290 291 292 293 294 295 296 297 298 300 301  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTP12N50P IXTP12N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.86 EUR
21+3.46 EUR
26+2.76 EUR
28+2.62 EUR
250+2.57 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IXTA12N50P IXTA12N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTT02N450HV IXTT02N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1471820&compId=IXTA(T)02N450HV.pdf?ci_sign=035071321f59a72a8b4bd172f91c4d79fad9fbe1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO268HV; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 0.2A
Power dissipation: 113W
Case: TO268HV
On-state resistance: 625Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
3+28.29 EUR
30+27.2 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
PLA190S PLA190S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7100C7&compId=PLA190.pdf?ci_sign=d3dd6a4abd26658046a751f3e84d8c6790306ec1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 0.5ms
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.12 EUR
18+4 EUR
19+3.78 EUR
50+3.76 EUR
250+3.63 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
PLA194S PLA194S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC77E0C7&compId=PLA194.pdf?ci_sign=b5f6d1e3573649bc3630d60c21a8bc071319a1a7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 2ms
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.03 EUR
23+3.17 EUR
24+3 EUR
250+2.89 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
PLA193S PLA193S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7600C7&compId=PLA193.pdf?ci_sign=cc6953e4d87acb24a4f5c915359585cfe3a4d641 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.83 EUR
24+3 EUR
26+2.83 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
PAA190S PAA190S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A6E0C7&compId=PAA190.pdf?ci_sign=a4db46c22502d000b84115de436f38721cd16e6b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.54 EUR
11+6.56 EUR
12+6.21 EUR
100+6.05 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFK50N85X IXFK50N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBEC6F854298BF&compId=IXF_50N85X.pdf?ci_sign=56532bb3aee648f73e62c996a617b6c80a0adc91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 218ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH06N220P3HV IXTH06N220P3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917C5820&compId=IXTH06N220P3HV.pdf?ci_sign=c5544d6a368be1812460f8c612b16431ae5057b8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A
Mounting: THT
Features of semiconductor devices: standard power mosfet
Case: TO247HV
Kind of package: tube
Drain-source voltage: 2.2kV
Drain current: 0.38A
On-state resistance: 80Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 10.4nC
Technology: Polar3™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Reverse recovery time: 1.1µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LCC110S LCC110S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4AD8C52C838BF&compId=lcc110.pdf?ci_sign=c9f5a4c15f68bc8b9d95e9201f8b42fdd258dfe1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 4ms
Turn-off time: 4ms
Body dimensions: 9.65x6.35x3.3mm
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.89 EUR
17+4.35 EUR
18+4.1 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
LCC110 LCC110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: THT
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 4ms
Turn-off time: 4ms
Body dimensions: 9.65x6.35x3.3mm
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.02 EUR
17+4.32 EUR
18+4.09 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
LCC110PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 4ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LCC110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 4ms
Turn-off time: 4ms
Body dimensions: 9.65x6.35x3.3mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LCC110P LCC110P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 4ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH220N06T3 IXFH220N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFA220N06T3 IXFA220N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP8N65X2 IXTP8N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA53B40A6BF8BF&compId=IXT_8N65X2.pdf?ci_sign=d8fe73a78fa1d8d397b55fa5baf0e28457656378 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFP16N50P IXFP16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.64 EUR
20+3.58 EUR
22+3.39 EUR
100+3.26 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXTP16N50P IXTP16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 400ns
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.52 EUR
21+3.42 EUR
23+3.23 EUR
50+3.13 EUR
100+3.1 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXFA16N50P3 IXFA16N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.45 EUR
24+3.1 EUR
30+2.4 EUR
32+2.27 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IXTT16N50D2 IXTT16N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ16N50P IXTQ16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH16N50P IXFH16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA16N50P IXFA16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH16N50P3 IXFH16N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA16N50P IXTA16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LBA710 LBA710 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE320E0C7&compId=LBA710.pdf?ci_sign=b2bcf3bea0ade2d924338f229a01b2c3b3a17049 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DSI45-16AR DSI45-16AR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD64BBE431F38BF&compId=DSI45-16AR.pdf?ci_sign=a6b51971916c964ec6a2ef98e7e97b945766a51e Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: single diode
Max. forward impulse current: 410A
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: ISOPLUS247™
Max. off-state voltage: 1.6kV
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.55 EUR
12+6.13 EUR
13+5.81 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
DSI45-08A DSI45-08A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE987F8C860636CD8BF&compId=DSI45-08A.pdf?ci_sign=35681297a2e2a5e8ed4e64daf69e3f10fde4b7ba Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 45A; tube; Ifsm: 410A; TO247-2; 270W
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: single diode
Max. forward impulse current: 410A
Power dissipation: 270W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO247-2
Max. off-state voltage: 0.8kV
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.76 EUR
19+3.78 EUR
20+3.58 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
PLA143S PLA143S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98FE0C7&compId=PLA143.pdf?ci_sign=4904e2f1829b022ee77cbeed6597ee3bd9e190e2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Operating temperature: -40...85°C
On-state resistance: 50Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 4kV
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Case: DIP6
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.43 EUR
21+3.47 EUR
22+3.29 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
LCA120 LCA120 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FA1940C7&compId=LCA120.pdf?ci_sign=c02f4fd184a2ca7999d27c10012f4019208f7a05 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
LCA120S LCA120S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FA1940C7&compId=LCA120.pdf?ci_sign=c02f4fd184a2ca7999d27c10012f4019208f7a05 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.09 EUR
25+2.93 EUR
26+2.76 EUR
50+2.75 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
LCA120STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FA1940C7&compId=LCA120.pdf?ci_sign=c02f4fd184a2ca7999d27c10012f4019208f7a05 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYN50N170CV1 IXYN50N170CV1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F3429480779820&compId=IXYN50N170CV1.pdf?ci_sign=61ed5f3699ed63ebaafb0c8b7374a82dab62642e Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 50A; SOT227B
Case: SOT227B
Max. off-state voltage: 1.7kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 485A
Power dissipation: 880W
Electrical mounting: screw
Mechanical mounting: screw
Technology: XPT™
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFX250N10P IXFX250N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB36DB3D55820&compId=IXFK(X)250N10P.pdf?ci_sign=8ea7e81bf2d9e3c41b4632496dce0444a2a01043 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 250A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA22N65X2 IXFA22N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7E33E399F98BF&compId=IXF_22N65X2.pdf?ci_sign=0c8f69f0a301813161ad4a66663b73b0511fd05a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Reverse recovery time: 145ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LCB110 LCB110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.25 EUR
27+2.73 EUR
28+2.59 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CPC1333GR CPC1333GR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003FE0C7&compId=CPC1333.pdf?ci_sign=dd21761c011cbe67e43ba1e240dd7b0022006e20 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP4
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 3ms
Body dimensions: 4.57x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 5kV
Max. operating current: 0.13A
Type of relay: solid state
auf Bestellung 231 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.52 EUR
39+1.84 EUR
41+1.74 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IXBX25N250 IXBX25N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB006B7F8953820&compId=IXBX25N250.pdf?ci_sign=17472d2e253c34c3d2eb9e963823e77b773ef7aa Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 25A; 300W; PLUS247™
Mounting: THT
Case: PLUS247™
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 103nC
Technology: BiMOSFET™
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 180A
Turn-on time: 694ns
Turn-off time: 650ns
Type of transistor: IGBT
Power dissipation: 300W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDI609CI IXDI609CI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 796 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.82 EUR
24+3.07 EUR
25+2.9 EUR
100+2.79 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXDI609YI IXDI609YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 272 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.82 EUR
24+3.07 EUR
25+2.9 EUR
100+2.8 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXDI609SIA IXDI609SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 895 Stücke:
Lieferzeit 14-21 Tag (e)
24+3 EUR
36+2.02 EUR
50+1.44 EUR
53+1.37 EUR
300+1.33 EUR
500+1.32 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IXDI609SI IXDI609SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDI609PI IXDI609PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDI609SIATR IXDI609SIATR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDI609SITR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD72-08io8B MCD72-08io8B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFF9E05F5C880C4&compId=MCD72-08io8B.pdf?ci_sign=866106dbdcc74352da58c97a5f01fcb2bd1c4ad7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 85A; TO240AA; Ufmax: 1.34V; bulk
Max. off-state voltage: 0.8kV
Load current: 85A
Semiconductor structure: double series
Case: TO240AA
Max. forward voltage: 1.34V
Max. load current: 133A
Max. forward impulse current: 1.7kA
Kind of package: bulk
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Type of semiconductor module: diode-thyristor
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
3+32.86 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXTH60N20L2 IXTH60N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH10P60 IXTH10P60 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E678466B5B8BF&compId=IXT_10P60.pdf?ci_sign=1f66270f133ab710d995425d2a54122a9b741bbc Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Reverse recovery time: 0.5µs
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 135nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH26N60P IXTH26N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D522F688F8B820&compId=IXTH(Q%2CT%2CV)26N60P_S.pdf?ci_sign=00e2f7b4fe95c5c6f2d8b57fcefc771d8841088e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Reverse recovery time: 0.5µs
Drain-source voltage: 600V
Drain current: 26A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 72nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH75N10L2 IXTH75N10L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993960D1A4DD498BF&compId=IXT_75N10L2.pdf?ci_sign=14d46f1640fe8dff3fd9c2e86627011d0edde846 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DFE60C600AHB DFE60C600AHB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; TO247-3
Max. off-state voltage: 0.6kV
Load current: 60A
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO247-3
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXYN100N120C3H1 IXYN100N120C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F3307AD85A7820&compId=IXYN100N120C3H1.pdf?ci_sign=431948e75f5382cc17397fa059ef249bc2666283 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: GenX3™; XPT™
Gate-emitter voltage: ±20V
Collector current: 62A
Pulsed collector current: 440A
Power dissipation: 690W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+56.07 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
VVZ40-16IO1 VVZ40-16IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C86498A6D8938BF&compId=VVZ40-16io1.pdf?ci_sign=5f385510a8a80d547d37887567223980cb9e22fb Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 45A; module
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 45A
Max. forward impulse current: 0.32kA
Electrical mounting: FASTON connectors
Leads: connectors
Case: V1-B-Pack
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.52V
Gate current: 65/80mA
Leads dimensions: 2x0.5mm
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
2+46.4 EUR
10+44.62 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXXH75N60B3D1 IXXH75N60B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB15D1C4927820&compId=IXXH75N60B3D1.pdf?ci_sign=bdc739111de6b9c22e1ccea3f1e37d6575acee96 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 108ns
Turn-off time: 315ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXBOD1-38R IXBOD1-38R IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4 Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.8kV
Breakover voltage: 3.8kV
Type of thyristor: BOD x4
Mounting: THT
Case: BOD
Max. load current: 0.7A
Kind of package: bulk
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
1+116 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXBOD1-36R IXBOD1-36R IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4 Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.6kV
Breakover voltage: 3.6kV
Type of thyristor: BOD x4
Mounting: THT
Case: BOD
Max. load current: 0.7A
Kind of package: bulk
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
1+116.29 EUR
20+114.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MCD224-20io1 MCD224-20io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B0FC98D8B704A0C4&compId=MCD224-20IO1.pdf?ci_sign=899655aeef6d8c99ec2904b5e307019275cbfa56 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Max. off-state voltage: 2kV
Max. load current: 390A
Max. forward voltage: 1.03V
Load current: 250A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 8kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.72V
Type of semiconductor module: diode-thyristor
Case: Y1-CU
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD224-22io1 MCD224-22io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFC9B927D1F20C4&compId=MCD224-22io1.pdf?ci_sign=f113a003fde4f0c6f05d29fa5569a17c34bac13c Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Max. off-state voltage: 2.2kV
Max. load current: 390A
Max. forward voltage: 1.03V
Load current: 250A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 8kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.72V
Type of semiconductor module: diode-thyristor
Case: Y1-CU
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK66N85X IXFK66N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D45EA035953820&compId=IXFK(X)66N85X.pdf?ci_sign=e7c14aa32d84194501b260d23630935b53873b4a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 66A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP12N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8
IXTP12N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.86 EUR
21+3.46 EUR
26+2.76 EUR
28+2.62 EUR
250+2.57 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IXTA12N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8
IXTA12N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTT02N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1471820&compId=IXTA(T)02N450HV.pdf?ci_sign=035071321f59a72a8b4bd172f91c4d79fad9fbe1
IXTT02N450HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO268HV; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 0.2A
Power dissipation: 113W
Case: TO268HV
On-state resistance: 625Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+28.29 EUR
30+27.2 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
PLA190S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7100C7&compId=PLA190.pdf?ci_sign=d3dd6a4abd26658046a751f3e84d8c6790306ec1
PLA190S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 0.5ms
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.12 EUR
18+4 EUR
19+3.78 EUR
50+3.76 EUR
250+3.63 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
PLA194S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC77E0C7&compId=PLA194.pdf?ci_sign=b5f6d1e3573649bc3630d60c21a8bc071319a1a7
PLA194S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 2ms
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.03 EUR
23+3.17 EUR
24+3 EUR
250+2.89 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
PLA193S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7600C7&compId=PLA193.pdf?ci_sign=cc6953e4d87acb24a4f5c915359585cfe3a4d641
PLA193S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.83 EUR
24+3 EUR
26+2.83 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
PAA190S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A6E0C7&compId=PAA190.pdf?ci_sign=a4db46c22502d000b84115de436f38721cd16e6b
PAA190S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.54 EUR
11+6.56 EUR
12+6.21 EUR
100+6.05 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFK50N85X pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBEC6F854298BF&compId=IXF_50N85X.pdf?ci_sign=56532bb3aee648f73e62c996a617b6c80a0adc91
IXFK50N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 218ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH06N220P3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917C5820&compId=IXTH06N220P3HV.pdf?ci_sign=c5544d6a368be1812460f8c612b16431ae5057b8
IXTH06N220P3HV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A
Mounting: THT
Features of semiconductor devices: standard power mosfet
Case: TO247HV
Kind of package: tube
Drain-source voltage: 2.2kV
Drain current: 0.38A
On-state resistance: 80Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 10.4nC
Technology: Polar3™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Reverse recovery time: 1.1µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LCC110S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4AD8C52C838BF&compId=lcc110.pdf?ci_sign=c9f5a4c15f68bc8b9d95e9201f8b42fdd258dfe1
LCC110S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 4ms
Turn-off time: 4ms
Body dimensions: 9.65x6.35x3.3mm
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.89 EUR
17+4.35 EUR
18+4.1 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
LCC110 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2
LCC110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: THT
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 4ms
Turn-off time: 4ms
Body dimensions: 9.65x6.35x3.3mm
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.02 EUR
17+4.32 EUR
18+4.09 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
LCC110PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 4ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LCC110STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 4ms
Turn-off time: 4ms
Body dimensions: 9.65x6.35x3.3mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LCC110P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2
LCC110P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 4ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH220N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045
IXFH220N06T3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFA220N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045
IXFA220N06T3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP8N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA53B40A6BF8BF&compId=IXT_8N65X2.pdf?ci_sign=d8fe73a78fa1d8d397b55fa5baf0e28457656378
IXTP8N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFP16N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7
IXFP16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.64 EUR
20+3.58 EUR
22+3.39 EUR
100+3.26 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXTP16N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1
IXTP16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 400ns
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.52 EUR
21+3.42 EUR
23+3.23 EUR
50+3.13 EUR
100+3.1 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXFA16N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da
IXFA16N50P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.45 EUR
24+3.1 EUR
30+2.4 EUR
32+2.27 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IXTT16N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005
IXTT16N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ16N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1
IXTQ16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH16N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7
IXFH16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA16N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7
IXFA16N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH16N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da
IXFH16N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA16N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1
IXTA16N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LBA710 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE320E0C7&compId=LBA710.pdf?ci_sign=b2bcf3bea0ade2d924338f229a01b2c3b3a17049
LBA710
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DSI45-16AR pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD64BBE431F38BF&compId=DSI45-16AR.pdf?ci_sign=a6b51971916c964ec6a2ef98e7e97b945766a51e
DSI45-16AR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: single diode
Max. forward impulse current: 410A
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: ISOPLUS247™
Max. off-state voltage: 1.6kV
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.55 EUR
12+6.13 EUR
13+5.81 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
DSI45-08A pVersion=0046&contRep=ZT&docId=005056AB82531EE987F8C860636CD8BF&compId=DSI45-08A.pdf?ci_sign=35681297a2e2a5e8ed4e64daf69e3f10fde4b7ba
DSI45-08A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 45A; tube; Ifsm: 410A; TO247-2; 270W
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: single diode
Max. forward impulse current: 410A
Power dissipation: 270W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO247-2
Max. off-state voltage: 0.8kV
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.76 EUR
19+3.78 EUR
20+3.58 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
PLA143S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98FE0C7&compId=PLA143.pdf?ci_sign=4904e2f1829b022ee77cbeed6597ee3bd9e190e2
PLA143S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Operating temperature: -40...85°C
On-state resistance: 50Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 4kV
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Case: DIP6
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.43 EUR
21+3.47 EUR
22+3.29 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
LCA120 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FA1940C7&compId=LCA120.pdf?ci_sign=c02f4fd184a2ca7999d27c10012f4019208f7a05
LCA120
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
LCA120S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FA1940C7&compId=LCA120.pdf?ci_sign=c02f4fd184a2ca7999d27c10012f4019208f7a05
LCA120S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.09 EUR
25+2.93 EUR
26+2.76 EUR
50+2.75 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
LCA120STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FA1940C7&compId=LCA120.pdf?ci_sign=c02f4fd184a2ca7999d27c10012f4019208f7a05
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYN50N170CV1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F3429480779820&compId=IXYN50N170CV1.pdf?ci_sign=61ed5f3699ed63ebaafb0c8b7374a82dab62642e
IXYN50N170CV1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 50A; SOT227B
Case: SOT227B
Max. off-state voltage: 1.7kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 485A
Power dissipation: 880W
Electrical mounting: screw
Mechanical mounting: screw
Technology: XPT™
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFX250N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB36DB3D55820&compId=IXFK(X)250N10P.pdf?ci_sign=8ea7e81bf2d9e3c41b4632496dce0444a2a01043
IXFX250N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 250A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA22N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7E33E399F98BF&compId=IXF_22N65X2.pdf?ci_sign=0c8f69f0a301813161ad4a66663b73b0511fd05a
IXFA22N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Reverse recovery time: 145ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LCB110 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c
LCB110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.25 EUR
27+2.73 EUR
28+2.59 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CPC1333GR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003FE0C7&compId=CPC1333.pdf?ci_sign=dd21761c011cbe67e43ba1e240dd7b0022006e20
CPC1333GR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP4
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 3ms
Body dimensions: 4.57x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 5kV
Max. operating current: 0.13A
Type of relay: solid state
auf Bestellung 231 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.52 EUR
39+1.84 EUR
41+1.74 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IXBX25N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB006B7F8953820&compId=IXBX25N250.pdf?ci_sign=17472d2e253c34c3d2eb9e963823e77b773ef7aa
IXBX25N250
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 25A; 300W; PLUS247™
Mounting: THT
Case: PLUS247™
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 103nC
Technology: BiMOSFET™
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 180A
Turn-on time: 694ns
Turn-off time: 650ns
Type of transistor: IGBT
Power dissipation: 300W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDI609CI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDI609CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 796 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.82 EUR
24+3.07 EUR
25+2.9 EUR
100+2.79 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXDI609YI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDI609YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 272 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.82 EUR
24+3.07 EUR
25+2.9 EUR
100+2.8 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXDI609SIA pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDI609SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 895 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3 EUR
36+2.02 EUR
50+1.44 EUR
53+1.37 EUR
300+1.33 EUR
500+1.32 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IXDI609SI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDI609SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDI609PI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDI609PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDI609SIATR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
IXDI609SIATR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDI609SITR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD72-08io8B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFF9E05F5C880C4&compId=MCD72-08io8B.pdf?ci_sign=866106dbdcc74352da58c97a5f01fcb2bd1c4ad7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCD72-08io8B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 85A; TO240AA; Ufmax: 1.34V; bulk
Max. off-state voltage: 0.8kV
Load current: 85A
Semiconductor structure: double series
Case: TO240AA
Max. forward voltage: 1.34V
Max. load current: 133A
Max. forward impulse current: 1.7kA
Kind of package: bulk
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Type of semiconductor module: diode-thyristor
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.86 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXTH60N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442
IXTH60N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH10P60 pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E678466B5B8BF&compId=IXT_10P60.pdf?ci_sign=1f66270f133ab710d995425d2a54122a9b741bbc
IXTH10P60
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Reverse recovery time: 0.5µs
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 135nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH26N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D522F688F8B820&compId=IXTH(Q%2CT%2CV)26N60P_S.pdf?ci_sign=00e2f7b4fe95c5c6f2d8b57fcefc771d8841088e
IXTH26N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Reverse recovery time: 0.5µs
Drain-source voltage: 600V
Drain current: 26A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 72nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH75N10L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993960D1A4DD498BF&compId=IXT_75N10L2.pdf?ci_sign=14d46f1640fe8dff3fd9c2e86627011d0edde846
IXTH75N10L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DFE60C600AHB
DFE60C600AHB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; TO247-3
Max. off-state voltage: 0.6kV
Load current: 60A
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO247-3
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXYN100N120C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F3307AD85A7820&compId=IXYN100N120C3H1.pdf?ci_sign=431948e75f5382cc17397fa059ef249bc2666283
IXYN100N120C3H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: GenX3™; XPT™
Gate-emitter voltage: ±20V
Collector current: 62A
Pulsed collector current: 440A
Power dissipation: 690W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+56.07 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
VVZ40-16IO1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C86498A6D8938BF&compId=VVZ40-16io1.pdf?ci_sign=5f385510a8a80d547d37887567223980cb9e22fb
VVZ40-16IO1
Hersteller: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 45A; module
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 45A
Max. forward impulse current: 0.32kA
Electrical mounting: FASTON connectors
Leads: connectors
Case: V1-B-Pack
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.52V
Gate current: 65/80mA
Leads dimensions: 2x0.5mm
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+46.4 EUR
10+44.62 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXXH75N60B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB15D1C4927820&compId=IXXH75N60B3D1.pdf?ci_sign=bdc739111de6b9c22e1ccea3f1e37d6575acee96
IXXH75N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 108ns
Turn-off time: 315ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXBOD1-38R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4
IXBOD1-38R
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.8kV
Breakover voltage: 3.8kV
Type of thyristor: BOD x4
Mounting: THT
Case: BOD
Max. load current: 0.7A
Kind of package: bulk
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+116 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXBOD1-36R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4
IXBOD1-36R
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.6kV
Breakover voltage: 3.6kV
Type of thyristor: BOD x4
Mounting: THT
Case: BOD
Max. load current: 0.7A
Kind of package: bulk
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+116.29 EUR
20+114.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MCD224-20io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B0FC98D8B704A0C4&compId=MCD224-20IO1.pdf?ci_sign=899655aeef6d8c99ec2904b5e307019275cbfa56
MCD224-20io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Max. off-state voltage: 2kV
Max. load current: 390A
Max. forward voltage: 1.03V
Load current: 250A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 8kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.72V
Type of semiconductor module: diode-thyristor
Case: Y1-CU
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD224-22io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFC9B927D1F20C4&compId=MCD224-22io1.pdf?ci_sign=f113a003fde4f0c6f05d29fa5569a17c34bac13c
MCD224-22io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Max. off-state voltage: 2.2kV
Max. load current: 390A
Max. forward voltage: 1.03V
Load current: 250A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 8kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.72V
Type of semiconductor module: diode-thyristor
Case: Y1-CU
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK66N85X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D45EA035953820&compId=IXFK(X)66N85X.pdf?ci_sign=e7c14aa32d84194501b260d23630935b53873b4a
IXFK66N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 66A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 30 60 90 120 150 180 210 240 270 288 289 290 291 292 293 294 295 296 297 298 300 301  [ Nächste Seite >> ]