Foto | Bezeichnung | Hersteller | Beschreibung |
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VUO62-14NO7 | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 60A; Ifsm: 550A Type of bridge rectifier: three-phase Max. off-state voltage: 1.4kV Load current: 60A Max. forward impulse current: 0.55kA Electrical mounting: screw Version: module Max. forward voltage: 1.07V Leads: M5 screws Case: PWS-D Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
VUO62-16NO7 | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 550A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 60A Max. forward impulse current: 0.55kA Electrical mounting: screw Version: module Max. forward voltage: 1.07V Leads: M5 screws Case: PWS-D Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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IXTT140P10T | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; TO268 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -140A Power dissipation: 568W Case: TO268 Gate-source voltage: ±15V On-state resistance: 10mΩ Mounting: SMD Gate charge: 400nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 130ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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DSSK60-0045A | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.6V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Power dissipation: 135W Max. forward voltage: 0.6V Max. forward impulse current: 0.5kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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DSB60C45PB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Power dissipation: 145W Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.6V Max. forward impulse current: 490A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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DSSK50-01A | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.65V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 25A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 0.65V Max. forward impulse current: 0.45kA Power dissipation: 135W Kind of package: tube |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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DSSK50-015A | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; TO247-3; Ufmax: 0.68V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 25A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 0.68V Max. forward impulse current: 0.45kA Power dissipation: 135W Kind of package: tube |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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DSSK50-0025B | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 25V; 25Ax2; TO247-3; Ufmax: 0.42V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 25V Load current: 25A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 0.42V Max. forward impulse current: 330A Power dissipation: 90W Kind of package: tube |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
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LCB110 | IXYS |
![]() Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Contacts configuration: SPST-NC Operating temperature: -40...85°C Mounting: THT Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Case: DIP6 On-state resistance: 35Ω Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Max. operating current: 120mA Type of relay: solid state |
auf Bestellung 203 Stücke: Lieferzeit 14-21 Tag (e) |
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LCB717 | IXYS |
![]() Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC Contacts configuration: SPST-NC Operating temperature: -40...85°C Mounting: THT Relay variant: 1-phase; current source Switched voltage: max. 30V AC; max. 30V DC Control current max.: 50mA Manufacturer series: OptoMOS Case: DIP6 On-state resistance: 0.3Ω Turn-on time: 2ms Turn-off time: 5ms Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Max. operating current: 1.5A Type of relay: solid state |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1333GR | IXYS |
![]() Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC Contacts configuration: SPST-NC Operating temperature: -40...85°C Mounting: SMT Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Case: DIP4 On-state resistance: 30Ω Turn-on time: 2ms Turn-off time: 3ms Body dimensions: 4.57x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 5kV Max. operating current: 0.13A Type of relay: solid state |
auf Bestellung 231 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH26N50 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247-3; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 135nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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FMM22-06PF | IXYS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 600V; 12A; Idm: 66A Type of transistor: N-MOSFET x2 Power dissipation: 130W Polarisation: unipolar Kind of package: tube Gate charge: 58nC Technology: PolarHV™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 66A Mounting: THT Case: ISOPLUS i4-pac™ x024a Semiconductor structure: double series Reverse recovery time: 200ns Drain-source voltage: 600V Drain current: 12A On-state resistance: 0.35Ω |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA260N055T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 260A Power dissipation: 480W Case: TO263 On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 60ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTA260N055T2-7 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 260A Power dissipation: 480W Case: TO263-7 On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 60ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFR20N80P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™ Case: ISOPLUS247™ Mounting: THT Kind of package: tube Drain-source voltage: 800V Drain current: 10A On-state resistance: 570mΩ Type of transistor: N-MOSFET Power dissipation: 160W Polarisation: unipolar Gate charge: 86nC Kind of channel: enhancement |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1540GSTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 2ms Turn-off time: 2ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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CPC1540GS | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 2ms Turn-off time: 2ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CPC1560GS | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 300mA Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 5.6Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 0.1ms Turn-off time: 400µs Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
CPC1560GSTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 300mA Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 5.6Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 0.1ms Turn-off time: 400µs Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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MCMA120UJ1800ED | IXYS |
![]() Description: Bridge rectifier: half-controlled; Urmax: 1.8kV; If: 120A; E2-Pack Max. off-state voltage: 1.8kV Max. forward voltage: 1.36V Load current: 120A Gate current: 70/150mA Max. forward impulse current: 0.5kA Electrical mounting: Press-in PCB Mechanical mounting: screw Version: module Features of semiconductor devices: freewheelling diode Type of bridge rectifier: half-controlled Case: E2-Pack |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1964B | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.800VAC; 1-phase Operating temperature: -40...85°C Body dimensions: 21.08x16.76x3.3mm Insulation voltage: 5kV Switching method: zero voltage switching Max. operating current: 1.5A Type of relay: solid state Relay variant: 1-phase Switched voltage: max. 800V AC Control current max.: 50mA Mounting: SMT Case: SO8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CPC1964BX6 | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.600VAC; 1-phase Operating temperature: -40...85°C Body dimensions: 21.08x16.76x3.3mm Insulation voltage: 5kV Switching method: zero voltage switching Max. operating current: 1.5A Type of relay: solid state Relay variant: 1-phase Switched voltage: max. 600V AC Control current max.: 50mA Mounting: SMT Case: SO8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFR16N120P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 230W; ISOPLUS247™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 9A Type of transistor: N-MOSFET Power dissipation: 230W Kind of package: tube Gate charge: 0.12µC Kind of channel: enhancement Mounting: THT Case: ISOPLUS247™ |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFL100N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 68A; 625W; ISOPLUS264™ Drain-source voltage: 500V Drain current: 68A Case: ISOPLUS264™ Polarisation: unipolar On-state resistance: 52mΩ Power dissipation: 625W Kind of channel: enhancement Gate charge: 240nC Mounting: THT Kind of package: tube Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFN100N50P | IXYS |
![]() ![]() Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 75A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 49mΩ Pulsed drain current: 250A Power dissipation: 1.04kW Technology: HiPerFET™ Kind of channel: enhancement Gate charge: 240nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFB100N50P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™ Drain-source voltage: 500V Drain current: 100A Case: PLUS264™ Polarisation: unipolar On-state resistance: 49mΩ Power dissipation: 1890W Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate charge: 240nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mounting: THT Kind of package: tube Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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FMM22-05PF | IXYS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 500V; 13A; Idm: 55A Mounting: THT Power dissipation: 132W Polarisation: unipolar Kind of package: tube Gate charge: 50nC Technology: PolarHV™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 55A Case: ISOPLUS i4-pac™ x024a Semiconductor structure: double series Reverse recovery time: 200ns Drain-source voltage: 500V Drain current: 13A On-state resistance: 0.27Ω Type of transistor: N-MOSFET x2 |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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IX4310N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V Type of integrated circuit: driver Mounting: SMD Case: SO8 Operating temperature: -40...125°C Kind of package: tube Output current: -2...2A Number of channels: 2 Kind of output: non-inverting Kind of integrated circuit: gate driver; low-side Supply voltage: 5...24V |
auf Bestellung 1672 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1302GSTR | IXYS |
![]() Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs CTR@If: 1000-8000%@1mA Trigger current: 50mA Slew rate: 0.25V/μs Type of optocoupler: optocoupler Mounting: SMD Max. off-state voltage: 5V Turn-on time: 1µs Turn-off time: 80µs Number of channels: 2 Kind of output: Darlington Insulation voltage: 3.75kV |
auf Bestellung 545 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1302G | IXYS |
![]() Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8 CTR@If: 1000-8000%@1mA Type of optocoupler: optocoupler Mounting: THT Case: DIP8 Number of channels: 2 Kind of output: Darlington Insulation voltage: 3.75kV |
auf Bestellung 388 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP48N20T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 48A Power dissipation: 250W Case: TO220AB On-state resistance: 50mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 130ns |
auf Bestellung 251 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN300N20X3 | IXYS |
![]() ![]() Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A Polarisation: unipolar Drain-source voltage: 200V Drain current: 300A Power dissipation: 695W Case: SOT227B On-state resistance: 3.5mΩ Gate charge: 375nC Kind of channel: enhancement Reverse recovery time: 172ns Pulsed drain current: 700A Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: HiPerFET™; X3-Class Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTN110N20L2 | IXYS |
![]() Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 500nC Technology: Linear L2™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 275A Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 420ns Drain-source voltage: 200V Drain current: 100A On-state resistance: 24mΩ Power dissipation: 735W Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTH1N200P3HV | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2kV Drain current: 1A Power dissipation: 125W Case: TO247HV On-state resistance: 40Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 2.3µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTK110N20L2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 110A Power dissipation: 960W Case: TO264 On-state resistance: 24mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 420ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTQ60N20L2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 60A Power dissipation: 540W Case: TO3P On-state resistance: 45mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 330ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTT3N200P3HV | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 2kV; 3A; 520W; TO268HV; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2kV Drain current: 3A Power dissipation: 520W Case: TO268HV On-state resistance: 8Ω Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 420ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTT80N20L | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 80A Power dissipation: 520W Case: TO268 On-state resistance: 32mΩ Mounting: SMD Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTH80N20L | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 80A Power dissipation: 520W Case: TO247-3 On-state resistance: 32mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTA1N200P3HV | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2kV Drain current: 1A Power dissipation: 125W Case: TO263HV On-state resistance: 40Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 2.3µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTH3N200P3HV | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 2kV; 3A; 520W; TO247HV; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2kV Drain current: 3A Power dissipation: 520W Case: TO247HV On-state resistance: 5Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 420ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXLF19N250A | IXYS |
![]() Description: Transistor: IGBT; NPT; 2.5kV; 19A; 250W; ISOPLUS i4-pac™ x024c Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 2.5kV Collector current: 19A Power dissipation: 250W Case: ISOPLUS i4-pac™ x024c Gate-emitter voltage: ±20V Pulsed collector current: 70A Mounting: THT Gate charge: 142nC Kind of package: tube Turn-on time: 0.1µs Turn-off time: 0.6µs Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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PLA194S | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 3ms Turn-off time: 2ms |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEC60-06A | IXYS |
![]() Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 250A Case: TO247-3 Max. forward voltage: 1.6V Power dissipation: 165W Reverse recovery time: 35ns Technology: HiPerFRED™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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LAA100P | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Case: DIP8 On-state resistance: 25Ω Mounting: SMT Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Contacts configuration: SPST-NO x2 Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Operating temperature: -40...85°C |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFT120N15P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 120A Power dissipation: 600W Case: TO268 On-state resistance: 16mΩ Mounting: SMD Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns Technology: HiPerFET™; PolarHT™ Gate-source voltage: ±20V |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP32N65X | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO220AB; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 32A Power dissipation: 500W Case: TO220AB On-state resistance: 135mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 400ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTP32N65XM | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 78W; TO220FP; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 32A Power dissipation: 78W Case: TO220FP On-state resistance: 135mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 400ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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OMA160 | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC Operating temperature: -40...85°C Case: DIP6 On-state resistance: 100Ω Turn-on time: 125µs Turn-off time: 125µs Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Contacts configuration: SPST-NO Max. operating current: 50mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 50mA Manufacturer series: OptoMOS Mounting: THT |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1510GSTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 200mA Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 15Ω Mounting: SMT Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 2ms Turn-off time: 2ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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LAA110PL | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
auf Bestellung 295 Stücke: Lieferzeit 14-21 Tag (e) |
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LAA110S | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
auf Bestellung 228 Stücke: Lieferzeit 14-21 Tag (e) |
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LAA110 | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
auf Bestellung 231 Stücke: Lieferzeit 14-21 Tag (e) |
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LBA110 | IXYS |
![]() ![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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LBA110S | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms |
auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
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LCC110S | IXYS |
![]() Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Mounting: SMT Body dimensions: 9.65x6.35x3.3mm Turn-on time: 4ms Insulation voltage: 3.75kV On-state resistance: 35Ω Contacts configuration: SPDT Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Operating temperature: -40...85°C Control current max.: 50mA Manufacturer series: OptoMOS Turn-off time: 4ms |
auf Bestellung 166 Stücke: Lieferzeit 14-21 Tag (e) |
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LBB110 | IXYS |
![]() ![]() Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS On-state resistance: 35Ω Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.65x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NC x2 Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Mounting: THT Operating temperature: -40...85°C Case: DIP8 |
auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
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PLA110 | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Type of relay: solid state Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Turn-off time: 0.5ms Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO Case: DIP6 Operating temperature: -40...85°C Control current max.: 50mA Mounting: THT On-state resistance: 22Ω Turn-on time: 1ms |
auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) |
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PLA110S | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Type of relay: solid state Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Turn-off time: 0.5ms Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO Case: DIP6 Operating temperature: -40...85°C Control current max.: 50mA Mounting: SMT On-state resistance: 22Ω Turn-on time: 1ms |
auf Bestellung 125 Stücke: Lieferzeit 14-21 Tag (e) |
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VUO62-14NO7 |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 60A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.4kV
Load current: 60A
Max. forward impulse current: 0.55kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.07V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 60A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.4kV
Load current: 60A
Max. forward impulse current: 0.55kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.07V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VUO62-16NO7 |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 0.55kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.07V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 0.55kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.07V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTT140P10T |
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Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; TO268
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO268
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; TO268
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO268
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DSSK60-0045A |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Power dissipation: 135W
Max. forward voltage: 0.6V
Max. forward impulse current: 0.5kA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Power dissipation: 135W
Max. forward voltage: 0.6V
Max. forward impulse current: 0.5kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DSB60C45PB |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Power dissipation: 145W
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.6V
Max. forward impulse current: 490A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Power dissipation: 145W
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.6V
Max. forward impulse current: 490A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DSSK50-01A |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.65V
Max. forward impulse current: 0.45kA
Power dissipation: 135W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.65V
Max. forward impulse current: 0.45kA
Power dissipation: 135W
Kind of package: tube
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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12+ | 6.26 EUR |
13+ | 5.53 EUR |
14+ | 5.11 EUR |
DSSK50-015A |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; TO247-3; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.68V
Max. forward impulse current: 0.45kA
Power dissipation: 135W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; TO247-3; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.68V
Max. forward impulse current: 0.45kA
Power dissipation: 135W
Kind of package: tube
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.58 EUR |
13+ | 5.82 EUR |
14+ | 5.23 EUR |
15+ | 4.95 EUR |
30+ | 4.86 EUR |
DSSK50-0025B |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25Ax2; TO247-3; Ufmax: 0.42V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.42V
Max. forward impulse current: 330A
Power dissipation: 90W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25Ax2; TO247-3; Ufmax: 0.42V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.42V
Max. forward impulse current: 330A
Power dissipation: 90W
Kind of package: tube
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.62 EUR |
18+ | 4.16 EUR |
22+ | 3.32 EUR |
23+ | 3.13 EUR |
LCB110 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
24+ | 3.10 EUR |
28+ | 2.60 EUR |
30+ | 2.46 EUR |
LCB717 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase; current source
Switched voltage: max. 30V AC; max. 30V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 0.3Ω
Turn-on time: 2ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 1.5A
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase; current source
Switched voltage: max. 30V AC; max. 30V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 0.3Ω
Turn-on time: 2ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 1.5A
Type of relay: solid state
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.42 EUR |
13+ | 5.82 EUR |
14+ | 5.49 EUR |
CPC1333GR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP4
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 3ms
Body dimensions: 4.57x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 5kV
Max. operating current: 0.13A
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP4
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 3ms
Body dimensions: 4.57x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 5kV
Max. operating current: 0.13A
Type of relay: solid state
auf Bestellung 231 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.83 EUR |
41+ | 1.76 EUR |
44+ | 1.66 EUR |
IXFH26N50 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FMM22-06PF |
Hersteller: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 600V; 12A; Idm: 66A
Type of transistor: N-MOSFET x2
Power dissipation: 130W
Polarisation: unipolar
Kind of package: tube
Gate charge: 58nC
Technology: PolarHV™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 66A
Mounting: THT
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.35Ω
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 600V; 12A; Idm: 66A
Type of transistor: N-MOSFET x2
Power dissipation: 130W
Polarisation: unipolar
Kind of package: tube
Gate charge: 58nC
Technology: PolarHV™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 66A
Mounting: THT
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.35Ω
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 24.00 EUR |
IXTA260N055T2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO263
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO263
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXTA260N055T2-7 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFR20N80P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 800V
Drain current: 10A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Gate charge: 86nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 800V
Drain current: 10A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Gate charge: 86nC
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 14.26 EUR |
8+ | 9.64 EUR |
CPC1540GSTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
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CPC1540GS |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1560GS |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 5.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 0.1ms
Turn-off time: 400µs
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 5.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 0.1ms
Turn-off time: 400µs
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1560GSTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 5.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 0.1ms
Turn-off time: 400µs
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 5.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 0.1ms
Turn-off time: 400µs
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
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MCMA120UJ1800ED |
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Hersteller: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.8kV; If: 120A; E2-Pack
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.36V
Load current: 120A
Gate current: 70/150mA
Max. forward impulse current: 0.5kA
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Features of semiconductor devices: freewheelling diode
Type of bridge rectifier: half-controlled
Case: E2-Pack
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.8kV; If: 120A; E2-Pack
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.36V
Load current: 120A
Gate current: 70/150mA
Max. forward impulse current: 0.5kA
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Features of semiconductor devices: freewheelling diode
Type of bridge rectifier: half-controlled
Case: E2-Pack
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 95.12 EUR |
CPC1964B |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Mounting: SMT
Case: SO8
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Mounting: SMT
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen
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CPC1964BX6 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Mounting: SMT
Case: SO8
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Mounting: SMT
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFR16N120P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 230W; ISOPLUS247™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Type of transistor: N-MOSFET
Power dissipation: 230W
Kind of package: tube
Gate charge: 0.12µC
Kind of channel: enhancement
Mounting: THT
Case: ISOPLUS247™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 230W; ISOPLUS247™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Type of transistor: N-MOSFET
Power dissipation: 230W
Kind of package: tube
Gate charge: 0.12µC
Kind of channel: enhancement
Mounting: THT
Case: ISOPLUS247™
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 22.04 EUR |
IXFL100N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 68A; 625W; ISOPLUS264™
Drain-source voltage: 500V
Drain current: 68A
Case: ISOPLUS264™
Polarisation: unipolar
On-state resistance: 52mΩ
Power dissipation: 625W
Kind of channel: enhancement
Gate charge: 240nC
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 68A; 625W; ISOPLUS264™
Drain-source voltage: 500V
Drain current: 68A
Case: ISOPLUS264™
Polarisation: unipolar
On-state resistance: 52mΩ
Power dissipation: 625W
Kind of channel: enhancement
Gate charge: 240nC
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFN100N50P | ![]() |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 75A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 250A
Power dissipation: 1.04kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 75A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 250A
Power dissipation: 1.04kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFB100N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Drain-source voltage: 500V
Drain current: 100A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 49mΩ
Power dissipation: 1890W
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Drain-source voltage: 500V
Drain current: 100A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 49mΩ
Power dissipation: 1890W
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FMM22-05PF |
Hersteller: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 500V; 13A; Idm: 55A
Mounting: THT
Power dissipation: 132W
Polarisation: unipolar
Kind of package: tube
Gate charge: 50nC
Technology: PolarHV™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 55A
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 13A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 500V; 13A; Idm: 55A
Mounting: THT
Power dissipation: 132W
Polarisation: unipolar
Kind of package: tube
Gate charge: 50nC
Technology: PolarHV™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 55A
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 13A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET x2
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 21.96 EUR |
IX4310N |
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Kind of package: tube
Output current: -2...2A
Number of channels: 2
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 5...24V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Kind of package: tube
Output current: -2...2A
Number of channels: 2
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 5...24V
auf Bestellung 1672 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.90 EUR |
62+ | 1.16 EUR |
73+ | 0.98 EUR |
125+ | 0.57 EUR |
132+ | 0.54 EUR |
CPC1302GSTR |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
CTR@If: 1000-8000%@1mA
Trigger current: 50mA
Slew rate: 0.25V/μs
Type of optocoupler: optocoupler
Mounting: SMD
Max. off-state voltage: 5V
Turn-on time: 1µs
Turn-off time: 80µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
CTR@If: 1000-8000%@1mA
Trigger current: 50mA
Slew rate: 0.25V/μs
Type of optocoupler: optocoupler
Mounting: SMD
Max. off-state voltage: 5V
Turn-on time: 1µs
Turn-off time: 80µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
auf Bestellung 545 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.43 EUR |
35+ | 2.04 EUR |
38+ | 1.93 EUR |
500+ | 1.86 EUR |
CPC1302G |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
CTR@If: 1000-8000%@1mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP8
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
CTR@If: 1000-8000%@1mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP8
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
auf Bestellung 388 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.49 EUR |
36+ | 2.03 EUR |
38+ | 1.92 EUR |
IXTP48N20T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 130ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 130ns
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.15 EUR |
20+ | 3.72 EUR |
23+ | 3.15 EUR |
25+ | 2.97 EUR |
50+ | 2.96 EUR |
IXFN300N20X3 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 695W
Case: SOT227B
On-state resistance: 3.5mΩ
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 172ns
Pulsed drain current: 700A
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 695W
Case: SOT227B
On-state resistance: 3.5mΩ
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 172ns
Pulsed drain current: 700A
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTN110N20L2 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 500nC
Technology: Linear L2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 275A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 420ns
Drain-source voltage: 200V
Drain current: 100A
On-state resistance: 24mΩ
Power dissipation: 735W
Polarisation: unipolar
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 500nC
Technology: Linear L2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 275A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 420ns
Drain-source voltage: 200V
Drain current: 100A
On-state resistance: 24mΩ
Power dissipation: 735W
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXTH1N200P3HV |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247HV
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247HV
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
Produkt ist nicht verfügbar
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IXTK110N20L2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXTQ60N20L2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO3P
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO3P
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
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IXTT3N200P3HV |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 3A; 520W; TO268HV; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 3A
Power dissipation: 520W
Case: TO268HV
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 420ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 3A; 520W; TO268HV; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 3A
Power dissipation: 520W
Case: TO268HV
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 420ns
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IXTT80N20L |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO268
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO268
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXTH80N20L |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXTA1N200P3HV |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 40Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 40Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXTH3N200P3HV |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 3A; 520W; TO247HV; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 3A
Power dissipation: 520W
Case: TO247HV
On-state resistance: 5Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 420ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 3A; 520W; TO247HV; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 3A
Power dissipation: 520W
Case: TO247HV
On-state resistance: 5Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
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IXLF19N250A |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 19A; 250W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 19A
Power dissipation: 250W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 0.6µs
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 19A; 250W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 19A
Power dissipation: 250W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 0.6µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
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PLA194S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 2ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 2ms
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.56 EUR |
24+ | 3.02 EUR |
25+ | 2.86 EUR |
DSEC60-06A |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 1.6V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 1.6V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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LAA100P |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 11.91 EUR |
IXFT120N15P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO268
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHT™
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO268
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHT™
Gate-source voltage: ±20V
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 13.54 EUR |
9+ | 8.41 EUR |
IXTP32N65X |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTP32N65XM |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 78W; TO220FP; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 78W
Case: TO220FP
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 78W; TO220FP; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 78W
Case: TO220FP
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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OMA160 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 100Ω
Turn-on time: 125µs
Turn-off time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 100Ω
Turn-on time: 125µs
Turn-off time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.85 EUR |
25+ | 2.96 EUR |
26+ | 2.80 EUR |
CPC1510GSTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LAA110PL |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.72 EUR |
17+ | 4.30 EUR |
18+ | 4.08 EUR |
LAA110S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.16 EUR |
18+ | 4.19 EUR |
19+ | 3.96 EUR |
LAA110 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
auf Bestellung 231 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.76 EUR |
18+ | 4.19 EUR |
19+ | 3.96 EUR |
LBA110 | ![]() |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
LBA110S |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.45 EUR |
17+ | 4.38 EUR |
18+ | 4.13 EUR |
LCC110S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Turn-on time: 4ms
Insulation voltage: 3.75kV
On-state resistance: 35Ω
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-off time: 4ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Turn-on time: 4ms
Insulation voltage: 3.75kV
On-state resistance: 35Ω
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-off time: 4ms
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 8.97 EUR |
18+ | 4.16 EUR |
19+ | 3.93 EUR |
LBB110 | ![]() |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.22 EUR |
15+ | 4.95 EUR |
16+ | 4.68 EUR |
PLA110 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: THT
On-state resistance: 22Ω
Turn-on time: 1ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: THT
On-state resistance: 22Ω
Turn-on time: 1ms
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.43 EUR |
22+ | 3.36 EUR |
23+ | 3.17 EUR |
PLA110S |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: SMT
On-state resistance: 22Ω
Turn-on time: 1ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: SMT
On-state resistance: 22Ω
Turn-on time: 1ms
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 5.00 EUR |
21+ | 3.42 EUR |
23+ | 3.23 EUR |