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LF2136BTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F27090BC18C0CE&compId=LF2136BTR.pdf?ci_sign=7d4488ec65212ff10c76d0a7eb8b2083d5f4913f Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Type of integrated circuit: driver
Number of channels: 6
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Mounting: SMD
Case: SO28
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PBA150S PBA150S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26AB60C7&compId=PBA150.pdf?ci_sign=95c39d9d73c016e3ffd8e8cb2457778578aa240e Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
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11+6.66 EUR
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PBA150STR IXYS PBA150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
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CPC2317NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891960C7&compId=CPC2317N.pdf?ci_sign=29adb11cf05dc8881e900756a93efa2a5d0cc008 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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IXBT16N170AHV IXBT16N170AHV IXYS IXBA16N170AHV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Mounting: SMD
Case: TO268HV
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Technology: BiMOSFET™
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IXBT16N170A IXBT16N170A IXYS IXBH(T)16N170A.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Mounting: SMD
Case: TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Technology: BiMOSFET™
auf Bestellung 9 Stücke:
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IXGH10N170A IXGH10N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A98EA1E25B38BF&compId=IXG_10N170A.pdf?ci_sign=43009bf67308e8af9bb85474249e61e9278ec252 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 5A
Pulsed collector current: 20A
Turn-on time: 107ns
Turn-off time: 240ns
Type of transistor: IGBT
Power dissipation: 140W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 29nC
Technology: NPT
Mounting: THT
Case: TO247-3
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IXGH24N170 IXGH24N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3D3296E6F820&compId=IXGH(T)24N170.pdf?ci_sign=bcf829c7a280c895f4c01ef3c947f0ab37ed7901 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 150A
Turn-on time: 105ns
Turn-off time: 560ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 106nC
Technology: NPT
Mounting: THT
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IXGH32N170 IXGH32N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF680363E99820&compId=IXGH(t)32N170.pdf?ci_sign=9963563482ba752aee4d73fdf7543cee510e34e6 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
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IXFP270N06T3 IXFP270N06T3 IXYS IXxx270N06T3-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; TrenchT3™
Reverse recovery time: 47ns
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IXFA270N06T3 IXFA270N06T3 IXYS IXxx270N06T3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; TrenchT3™
Reverse recovery time: 47ns
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IXTY44N10T IXTY44N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Drain-source voltage: 100V
Drain current: 44A
Case: TO252
Polarisation: unipolar
On-state resistance: 30mΩ
Power dissipation: 130W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Kind of channel: enhancement
Mounting: SMD
Reverse recovery time: 60ns
Type of transistor: N-MOSFET
auf Bestellung 305 Stücke:
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25+2.97 EUR
40+1.80 EUR
43+1.70 EUR
70+1.63 EUR
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IXFP72N20X3M IXFP72N20X3M IXYS IXFP72N20X3M.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 36W; TO220FP
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
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11+6.85 EUR
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IXFP72N20X3 IXFP72N20X3 IXYS IXF_72N20X3.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO220AB
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
auf Bestellung 82 Stücke:
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11+6.85 EUR
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IXFP50N20X3 IXFP50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Reverse recovery time: 70ns
Drain-source voltage: 200V
Drain current: 50A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: THT
Case: TO220AB
auf Bestellung 23 Stücke:
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10+7.21 EUR
12+6.49 EUR
14+5.18 EUR
15+4.89 EUR
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IXFP36N20X3 IXFP36N20X3 IXYS IXF_36N20X3.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 176W; TO220AB
Reverse recovery time: 75ns
Drain-source voltage: 200V
Drain current: 36A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Gate charge: 21nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
auf Bestellung 205 Stücke:
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14+5.26 EUR
22+3.37 EUR
23+3.19 EUR
50+3.17 EUR
100+3.07 EUR
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IXFY36N20X3 IXFY36N20X3 IXYS IXF_36N20X3.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 176W; TO252
Reverse recovery time: 75ns
Drain-source voltage: 200V
Drain current: 36A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Gate charge: 21nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO252
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IXFA72N20X3 IXFA72N20X3 IXYS IXF_72N20X3.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO263
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
auf Bestellung 83 Stücke:
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6+11.95 EUR
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IXFQ72N20X3 IXFQ72N20X3 IXYS IXF_72N20X3.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO3P
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
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6+12.10 EUR
10+7.18 EUR
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IXFK220N20X3 IXFK220N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 204nC
Kind of channel: enhancement
Reverse recovery time: 116ns
Kind of package: tube
Technology: HiPerFET™; X3-Class
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5+17.66 EUR
10+16.97 EUR
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IXTK170P10P IXTK170P10P IXYS IXTK170P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Power dissipation: 890W
Polarisation: unipolar
On-state resistance: 14mΩ
Drain current: -170A
Kind of package: tube
Drain-source voltage: -100V
Reverse recovery time: 176ns
Case: TO264
Gate charge: 240nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Mounting: THT
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IXTK17N120L IXTK17N120L IXYS IXTK(X)17N120L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; TO264; 1.83us
Power dissipation: 700W
Polarisation: unipolar
On-state resistance: 0.9Ω
Drain current: 17A
Kind of package: tube
Drain-source voltage: 1.2kV
Reverse recovery time: 1.83µs
Case: TO264
Features of semiconductor devices: linear power mosfet
Gate charge: 155nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
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IXKC23N60C5 IXKC23N60C5 IXYS IXKC23N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Power dissipation: 147W
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IXBH42N170 IXBH42N170 IXYS IXBH42N170_IXBT42N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
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DSEP12-12A DSEP12-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEEF452F4F42143&compId=DSEP12-12A.pdf?ci_sign=0cc1292922f483364547a0e801999c0e23b38784 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 324 Stücke:
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34+2.13 EUR
36+2.02 EUR
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DSEP12-12AZ-TUB DSEP12-12AZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4C180AC36E0C4&compId=DSEP12-12AZ.pdf?ci_sign=956cc442568388d17ac272cecda55173443e4967 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; TO263ABHV; Ufmax: 1.87V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
auf Bestellung 79 Stücke:
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20+3.66 EUR
22+3.27 EUR
28+2.62 EUR
29+2.47 EUR
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IXTH240N15X4 IXTH240N15X4 IXYS IXTH240N15X4_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 940W
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 130ns
Drain-source voltage: 150V
Drain current: 240A
On-state resistance: 4.4mΩ
Features of semiconductor devices: ultra junction x-class
Gate charge: 195nC
Kind of channel: enhancement
auf Bestellung 123 Stücke:
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6+12.03 EUR
30+11.90 EUR
60+11.57 EUR
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IXHX40N150V1HV IXHX40N150V1HV IXYS IXHX40N150V1HV.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: TO247PLUS-HV
Mounting: THT
Max. forward impulse current: 7.6kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Kind of package: tube
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IXFK240N15T2 IXFK240N15T2 IXYS IXFK(X)240N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 240A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; TrenchT2™
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IXFH240N15X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_240n15x3_datasheet.pdf?assetguid=db0daa8a-a090-4544-9e9a-0eaae950088b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 240A; Idm: 420A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Pulsed drain current: 420A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 97ns
Technology: HiPerFET™; X3-Class
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IXFX240N15T2 IXFX240N15T2 IXYS IXFK(X)240N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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MMJX1H40N150 IXYS MMJX1H40N150.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 15.5kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 15.5kA
Features of semiconductor devices: Kelvin terminal; MOS-gated thyristor (MGT)
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IXTA110N055T2 IXTA110N055T2 IXYS IXTA(P)110N055T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
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MCD162-16io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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DSEI2X31-10B DSEI2X31-10B IXYS DSEI2x30-10B_DSEI2x31-10B.pdf Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 30A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 2V
Max. forward impulse current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
auf Bestellung 96 Stücke:
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DSEI2X30-10B DSEI2X30-10B IXYS DSEI2x30-10B_DSEI2x31-10B.pdf Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 30A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 2V
Max. forward impulse current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
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MCC95-18io1B MCC95-18io1B IXYS MCC95-18IO1B-DTE.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXTT360N055T2 IXTT360N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF1C858E7B820&compId=IXTH(T)360N055T2.pdf?ci_sign=23fb805fbce6e75a57fc84bdd4dfce3194e210b5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO268
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 78ns
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DPF10I600APA DPF10I600APA IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; TO220AC
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
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FMD15-06KC5 IXYS FMD15-06KC5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 15A
Semiconductor structure: diode/transistor
Topology: boost chopper
Case: ISOPLUS i4-pac™ x024a
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: super junction coolmos
Gate charge: 40nC
Technology: HiPerDynFRED
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Drain-source voltage: 600V
Drain current: 15A
On-state resistance: 0.165Ω
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IXTA50N20P IXTA50N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTA50N25T IXTA50N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4E4FF92DFD820&compId=IXTA(H%2CP%2CQ)50N25T.pdf?ci_sign=7e809dd509feff8e274b784c3f608f03c09bb7c0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
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CMA30E1600PN CMA30E1600PN IXYS CMA30E1600PN.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 36A; 23A; Igt: 28/50mA; TO220FP; THT; tube
Max. off-state voltage: 1.6kV
Max. load current: 36A
Load current: 23A
Gate current: 28/50mA
Max. forward impulse current: 220A
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: TO220FP
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CMA80E1600HB IXYS CMA80E1600HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 126A; 80A; Igt: 200mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 126A
Load current: 80A
Gate current: 200mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 780A
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CMA50E1600HB IXYS CMA50E1600HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 79A
Load current: 50A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 595A
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CMA40E1600HR IXYS CMA40E1600HR.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 63A
Load current: 40A
Gate current: 50/80mA
Case: ISO247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 470A
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DSEK60-06A DSEK60-06A IXYS DSEK60-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 300A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-3
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
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MMIX1Y100N120C3H1 IXYS MMIX1Y100N120C3H1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 40A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Mounting: SMD
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 265ns
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IXTK20N150 IXTK20N150 IXYS IXTK(X)20N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Mounting: THT
Case: TO264
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhancement
Reverse recovery time: 1.1µs
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
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IXTX20N150 IXTX20N150 IXYS IXTK(X)20N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us
Mounting: THT
Case: PLUS247™
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhancement
Reverse recovery time: 1.1µs
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
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CS30-16IO1 CS30-16IO1 IXYS CS30-12IO1-DTE.pdf description Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Max. off-state voltage: 1.6kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of thyristor: thyristor
Case: TO247AD
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CS30-14IO1 CS30-14IO1 IXYS CS30-12IO1-DTE.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Max. off-state voltage: 1.4kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of thyristor: thyristor
Case: TO247AD
auf Bestellung 257 Stücke:
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CLF20E1200PB CLF20E1200PB IXYS CLF20E1200PB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 55mA; TO220AB; THT; tube
Mounting: THT
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 55mA
Max. forward impulse current: 175A
Kind of package: tube
Type of thyristor: thyristor
Case: TO220AB
auf Bestellung 71 Stücke:
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GUO40-16NO1 GUO40-16NO1 IXYS GUO40-16NO1.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.06V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
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DSEP30-12AR DSEP30-12AR IXYS DSEP30-12AR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: ISOPLUS247™
Max. forward voltage: 1.79V
Max. forward impulse current: 200A
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Reverse recovery time: 40ns
Power dissipation: 135W
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DPG30I300HA DPG30I300HA IXYS media?resourcetype=datasheets&itemid=63779446-FB19-46A8-98FA-0405CBC10C47&filename=Littelfuse-Power-Semiconductors-DPG30I300HA-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 360A; TO247-2; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 160W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 256 Stücke:
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DPF60C200HJ DPF60C200HJ IXYS DPF60C200HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: ISOPLUS247™
Max. forward voltage: 0.88V
Max. forward impulse current: 560A
Kind of package: tube
Reverse recovery time: 35ns
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
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DPF60C300HB DPF60C300HB IXYS DPF60C300HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.97V
Max. forward impulse current: 0.4kA
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
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DPG30I300PA DPG30I300PA IXYS media?resourcetype=datasheets&itemid=3E2778AE-8266-4D7A-8063-2CEE495544CC&filename=Littelfuse-Power-Semiconductors-DPG30I300PA-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 360A; TO220AC; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.35V
Max. forward impulse current: 360A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 175W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
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18+4.16 EUR
30+2.39 EUR
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32+2.26 EUR
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DPF30I300PA DPF30I300PA IXYS DPF30I300PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 390A; TO220AC; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.17V
Max. forward impulse current: 390A
Kind of package: tube
Reverse recovery time: 55ns
Power dissipation: 175W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
auf Bestellung 79 Stücke:
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17+4.23 EUR
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23+3.25 EUR
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LF2136BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F27090BC18C0CE&compId=LF2136BTR.pdf?ci_sign=7d4488ec65212ff10c76d0a7eb8b2083d5f4913f
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Type of integrated circuit: driver
Number of channels: 6
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Mounting: SMD
Case: SO28
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PBA150S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26AB60C7&compId=PBA150.pdf?ci_sign=95c39d9d73c016e3ffd8e8cb2457778578aa240e
PBA150S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.72 EUR
11+6.66 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
PBA150STR PBA150.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC2317NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891960C7&compId=CPC2317N.pdf?ci_sign=29adb11cf05dc8881e900756a93efa2a5d0cc008
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXBT16N170AHV IXBA16N170AHV.pdf
IXBT16N170AHV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Mounting: SMD
Case: TO268HV
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Technology: BiMOSFET™
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.86 EUR
Mindestbestellmenge: 5
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IXBT16N170A IXBH(T)16N170A.pdf
IXBT16N170A
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Mounting: SMD
Case: TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Technology: BiMOSFET™
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.86 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXGH10N170A pVersion=0046&contRep=ZT&docId=005056AB82531EE995A98EA1E25B38BF&compId=IXG_10N170A.pdf?ci_sign=43009bf67308e8af9bb85474249e61e9278ec252
IXGH10N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 5A
Pulsed collector current: 20A
Turn-on time: 107ns
Turn-off time: 240ns
Type of transistor: IGBT
Power dissipation: 140W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 29nC
Technology: NPT
Mounting: THT
Case: TO247-3
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXGH24N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3D3296E6F820&compId=IXGH(T)24N170.pdf?ci_sign=bcf829c7a280c895f4c01ef3c947f0ab37ed7901
IXGH24N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 150A
Turn-on time: 105ns
Turn-off time: 560ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 106nC
Technology: NPT
Mounting: THT
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.56 EUR
Mindestbestellmenge: 4
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IXGH32N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF680363E99820&compId=IXGH(t)32N170.pdf?ci_sign=9963563482ba752aee4d73fdf7543cee510e34e6
IXGH32N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+22.35 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFP270N06T3 IXxx270N06T3-DTE.pdf
IXFP270N06T3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; TrenchT3™
Reverse recovery time: 47ns
Produkt ist nicht verfügbar
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IXFA270N06T3 IXxx270N06T3-DTE.pdf
IXFA270N06T3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; TrenchT3™
Reverse recovery time: 47ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTY44N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a
IXTY44N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Drain-source voltage: 100V
Drain current: 44A
Case: TO252
Polarisation: unipolar
On-state resistance: 30mΩ
Power dissipation: 130W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Kind of channel: enhancement
Mounting: SMD
Reverse recovery time: 60ns
Type of transistor: N-MOSFET
auf Bestellung 305 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.97 EUR
40+1.80 EUR
43+1.70 EUR
70+1.63 EUR
Mindestbestellmenge: 25
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IXFP72N20X3M IXFP72N20X3M.pdf 200VProductBrief.pdf
IXFP72N20X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 36W; TO220FP
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.59 EUR
11+6.85 EUR
12+6.48 EUR
50+6.38 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFP72N20X3 IXF_72N20X3.pdf 200VProductBrief.pdf
IXFP72N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO220AB
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.59 EUR
11+6.85 EUR
12+6.48 EUR
50+6.38 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFP50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
IXFP50N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Reverse recovery time: 70ns
Drain-source voltage: 200V
Drain current: 50A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: THT
Case: TO220AB
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.21 EUR
12+6.49 EUR
14+5.18 EUR
15+4.89 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXFP36N20X3 IXF_36N20X3.pdf 200VProductBrief.pdf
IXFP36N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 176W; TO220AB
Reverse recovery time: 75ns
Drain-source voltage: 200V
Drain current: 36A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Gate charge: 21nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.26 EUR
22+3.37 EUR
23+3.19 EUR
50+3.17 EUR
100+3.07 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXFY36N20X3 IXF_36N20X3.pdf 200VProductBrief.pdf
IXFY36N20X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 176W; TO252
Reverse recovery time: 75ns
Drain-source voltage: 200V
Drain current: 36A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Gate charge: 21nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO252
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.68 EUR
20+3.65 EUR
21+3.45 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXFA72N20X3 IXF_72N20X3.pdf 200VProductBrief.pdf
IXFA72N20X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO263
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.95 EUR
11+6.68 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ72N20X3 IXF_72N20X3.pdf 200VProductBrief.pdf
IXFQ72N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO3P
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.10 EUR
10+7.18 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFK220N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFK220N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 204nC
Kind of channel: enhancement
Reverse recovery time: 116ns
Kind of package: tube
Technology: HiPerFET™; X3-Class
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.68 EUR
5+17.66 EUR
10+16.97 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXTK170P10P IXTK170P10P.pdf
IXTK170P10P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Power dissipation: 890W
Polarisation: unipolar
On-state resistance: 14mΩ
Drain current: -170A
Kind of package: tube
Drain-source voltage: -100V
Reverse recovery time: 176ns
Case: TO264
Gate charge: 240nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTK17N120L IXTK(X)17N120L.pdf
IXTK17N120L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; TO264; 1.83us
Power dissipation: 700W
Polarisation: unipolar
On-state resistance: 0.9Ω
Drain current: 17A
Kind of package: tube
Drain-source voltage: 1.2kV
Reverse recovery time: 1.83µs
Case: TO264
Features of semiconductor devices: linear power mosfet
Gate charge: 155nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Produkt ist nicht verfügbar
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IXKC23N60C5 IXKC23N60C5.pdf
IXKC23N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Power dissipation: 147W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXBH42N170 IXBH42N170_IXBT42N170.pdf
IXBH42N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSEP12-12A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEEF452F4F42143&compId=DSEP12-12A.pdf?ci_sign=0cc1292922f483364547a0e801999c0e23b38784
DSEP12-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 324 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.40 EUR
34+2.13 EUR
36+2.02 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
DSEP12-12AZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4C180AC36E0C4&compId=DSEP12-12AZ.pdf?ci_sign=956cc442568388d17ac272cecda55173443e4967
DSEP12-12AZ-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; TO263ABHV; Ufmax: 1.87V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.66 EUR
22+3.27 EUR
28+2.62 EUR
29+2.47 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXTH240N15X4 IXTH240N15X4_HV.pdf
IXTH240N15X4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 940W
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 130ns
Drain-source voltage: 150V
Drain current: 240A
On-state resistance: 4.4mΩ
Features of semiconductor devices: ultra junction x-class
Gate charge: 195nC
Kind of channel: enhancement
auf Bestellung 123 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.92 EUR
6+12.03 EUR
30+11.90 EUR
60+11.57 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXHX40N150V1HV IXHX40N150V1HV.pdf
IXHX40N150V1HV
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: TO247PLUS-HV
Mounting: THT
Max. forward impulse current: 7.6kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK240N15T2 IXFK(X)240N15T2.pdf
IXFK240N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 240A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH240N15X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_240n15x3_datasheet.pdf?assetguid=db0daa8a-a090-4544-9e9a-0eaae950088b
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 240A; Idm: 420A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Pulsed drain current: 420A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 97ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFX240N15T2 IXFK(X)240N15T2.pdf
IXFX240N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMJX1H40N150 MMJX1H40N150.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 15.5kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 15.5kA
Features of semiconductor devices: Kelvin terminal; MOS-gated thyristor (MGT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA110N055T2 IXTA(P)110N055T2.pdf
IXTA110N055T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD162-16io1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSEI2X31-10B DSEI2x30-10B_DSEI2x31-10B.pdf
DSEI2X31-10B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 30A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 2V
Max. forward impulse current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+27.47 EUR
10+26.41 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DSEI2X30-10B DSEI2x30-10B_DSEI2x31-10B.pdf
DSEI2X30-10B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 30A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 2V
Max. forward impulse current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+27.07 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
MCC95-18io1B MCC95-18IO1B-DTE.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC95-18io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+46.49 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXTT360N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF1C858E7B820&compId=IXTH(T)360N055T2.pdf?ci_sign=23fb805fbce6e75a57fc84bdd4dfce3194e210b5
IXTT360N055T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO268
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 78ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DPF10I600APA
DPF10I600APA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; TO220AC
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
49+1.47 EUR
55+1.30 EUR
61+1.19 EUR
65+1.12 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
FMD15-06KC5 FMD15-06KC5.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 15A
Semiconductor structure: diode/transistor
Topology: boost chopper
Case: ISOPLUS i4-pac™ x024a
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: super junction coolmos
Gate charge: 40nC
Technology: HiPerDynFRED
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Drain-source voltage: 600V
Drain current: 15A
On-state resistance: 0.165Ω
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.66 EUR
Mindestbestellmenge: 5
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IXTA50N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34
IXTA50N20P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA50N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4E4FF92DFD820&compId=IXTA(H%2CP%2CQ)50N25T.pdf?ci_sign=7e809dd509feff8e274b784c3f608f03c09bb7c0
IXTA50N25T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMA30E1600PN CMA30E1600PN.pdf
CMA30E1600PN
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 36A; 23A; Igt: 28/50mA; TO220FP; THT; tube
Max. off-state voltage: 1.6kV
Max. load current: 36A
Load current: 23A
Gate current: 28/50mA
Max. forward impulse current: 220A
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: TO220FP
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.22 EUR
27+2.66 EUR
29+2.52 EUR
100+2.49 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
CMA80E1600HB CMA80E1600HB.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 126A; 80A; Igt: 200mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 126A
Load current: 80A
Gate current: 200mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 780A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMA50E1600HB CMA50E1600HB.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 79A
Load current: 50A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 595A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMA40E1600HR CMA40E1600HR.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 63A
Load current: 40A
Gate current: 50/80mA
Case: ISO247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 470A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSEK60-06A DSEK60-06A.pdf
DSEK60-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 300A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-3
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.78 EUR
11+6.85 EUR
12+6.48 EUR
120+6.23 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
MMIX1Y100N120C3H1 MMIX1Y100N120C3H1.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 40A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Mounting: SMD
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 265ns
Produkt ist nicht verfügbar
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IXTK20N150 IXTK(X)20N150.pdf
IXTK20N150
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Mounting: THT
Case: TO264
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhancement
Reverse recovery time: 1.1µs
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXTX20N150 IXTK(X)20N150.pdf
IXTX20N150
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us
Mounting: THT
Case: PLUS247™
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhancement
Reverse recovery time: 1.1µs
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CS30-16IO1 description CS30-12IO1-DTE.pdf
CS30-16IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Max. off-state voltage: 1.6kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of thyristor: thyristor
Case: TO247AD
auf Bestellung 269 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
14+5.41 EUR
15+5.11 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
CS30-14IO1 CS30-12IO1-DTE.pdf
CS30-14IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Max. off-state voltage: 1.4kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of thyristor: thyristor
Case: TO247AD
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.15 EUR
15+4.89 EUR
16+4.63 EUR
120+4.45 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
CLF20E1200PB CLF20E1200PB.pdf
CLF20E1200PB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 55mA; TO220AB; THT; tube
Mounting: THT
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 55mA
Max. forward impulse current: 175A
Kind of package: tube
Type of thyristor: thyristor
Case: TO220AB
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.73 EUR
26+2.76 EUR
28+2.60 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
GUO40-16NO1 GUO40-16NO1.pdf
GUO40-16NO1
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.06V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.61 EUR
14+20.78 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DSEP30-12AR DSEP30-12AR.pdf
DSEP30-12AR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: ISOPLUS247™
Max. forward voltage: 1.79V
Max. forward impulse current: 200A
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Reverse recovery time: 40ns
Power dissipation: 135W
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.21 EUR
11+6.59 EUR
120+6.48 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
DPG30I300HA media?resourcetype=datasheets&itemid=63779446-FB19-46A8-98FA-0405CBC10C47&filename=Littelfuse-Power-Semiconductors-DPG30I300HA-Datasheet
DPG30I300HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 360A; TO247-2; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 160W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 256 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.62 EUR
18+4.16 EUR
22+3.32 EUR
23+3.13 EUR
120+3.09 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
DPF60C200HJ DPF60C200HB.pdf
DPF60C200HJ
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: ISOPLUS247™
Max. forward voltage: 0.88V
Max. forward impulse current: 560A
Kind of package: tube
Reverse recovery time: 35ns
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.13 EUR
16+4.62 EUR
19+3.88 EUR
20+3.68 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
DPF60C300HB DPF60C300HB.pdf
DPF60C300HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.97V
Max. forward impulse current: 0.4kA
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.98 EUR
10+7.16 EUR
11+6.76 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
DPG30I300PA media?resourcetype=datasheets&itemid=3E2778AE-8266-4D7A-8063-2CEE495544CC&filename=Littelfuse-Power-Semiconductors-DPG30I300PA-Datasheet
DPG30I300PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 360A; TO220AC; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.35V
Max. forward impulse current: 360A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 175W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
auf Bestellung 326 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.16 EUR
30+2.39 EUR
31+2.35 EUR
32+2.26 EUR
50+2.17 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
DPF30I300PA DPF30I300PA.pdf
DPF30I300PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 390A; TO220AC; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.17V
Max. forward impulse current: 390A
Kind of package: tube
Reverse recovery time: 55ns
Power dissipation: 175W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.68 EUR
17+4.23 EUR
21+3.43 EUR
23+3.25 EUR
Mindestbestellmenge: 16
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