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DSEI2X30-10B DSEI2X30-10B IXYS DSEI2x30-10B_DSEI2x31-10B.pdf Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 30A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 2V
Max. forward impulse current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
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3+27.07 EUR
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IXTT360N055T2 IXTT360N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF1C858E7B820&compId=IXTH(T)360N055T2.pdf?ci_sign=23fb805fbce6e75a57fc84bdd4dfce3194e210b5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO268
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 78ns
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FMD15-06KC5 FMD15-06KC5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F522E6E4505820&compId=FMD15-06KC5.pdf?ci_sign=2f4352c0a860f23fb93ad3877941b2c9bd4b7589 Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 15A
Semiconductor structure: diode/transistor
Topology: boost chopper
Case: ISOPLUS i4-pac™ x024a
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: super junction coolmos
Gate charge: 40nC
Technology: HiPerDynFRED
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Drain-source voltage: 600V
Drain current: 15A
On-state resistance: 0.165Ω
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5+16.65 EUR
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IXTA50N20P IXTA50N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTA50N25T IXTA50N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4E4FF92DFD820&compId=IXTA(H%2CP%2CQ)50N25T.pdf?ci_sign=7e809dd509feff8e274b784c3f608f03c09bb7c0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
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CMA40E1600HR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB55D25969240C4&compId=CMA40E1600HR.pdf?ci_sign=6f80664eaf21c47f718bd7fb65bbdc0aa472624d Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Max. off-state voltage: 1.6kV
Max. load current: 63A
Load current: 40A
Gate current: 50/80mA
Max. forward impulse current: 470A
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: ISO247™
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GUO40-16NO1 GUO40-16NO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB45E9668858143&compId=GUO40-16NO1.pdf?ci_sign=42817d6c6b89c349de39c80517dc2b1e44dd5508 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.06V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
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14+20.78 EUR
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IXTH24N65X2 IXTH24N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC5FF44FC238BF&compId=IXT_24N65X2.pdf?ci_sign=ca1ded67daf9910d4f25da90b1a96f8fc87d8744 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 36nC
Technology: X2-Class
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO247-3
Reverse recovery time: 390ns
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 0.145Ω
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IXFA34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa34n65x3-datasheet?assetguid=7bd01bfc-f3d8-4755-8e6c-5e250cb5176f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 150ns
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IXFH34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet?assetguid=965e45cd-8715-4cf1-b85d-adaafdfc5ec2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 150ns
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OMA160S OMA160S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2699C0C7&compId=OMA160.pdf?ci_sign=81480a08d275770b533880aac2266f2ea5be6c1b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 125µs
Turn-off time: 125µs
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OMA160STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2699C0C7&compId=OMA160.pdf?ci_sign=81480a08d275770b533880aac2266f2ea5be6c1b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 125µs
Turn-off time: 125µs
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MCC26-16io1B MCC26-16io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFC3E41A23D820&compId=MCC26-16io1B.pdf?ci_sign=5a4693dfb84ab6f98fba34db632238650400c5e0 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Double series; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; Ifsm: 520A; screw
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 520A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.27V
Type of semiconductor module: thyristor
auf Bestellung 21 Stücke:
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3+29.97 EUR
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DSSS35-008AR DSSS35-008AR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CC1AE5618238BF&compId=DSSS35-008AR.pdf?ci_sign=7ea710e63520a5c453cdbdb74d880f191ed6aa31 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 35Ax2; ISOPLUS247™; 190W
Type of diode: Schottky rectifying
Case: ISOPLUS247™
Mounting: THT
Max. off-state voltage: 80V
Load current: 35A x2
Semiconductor structure: double series
Max. forward voltage: 0.68V
Max. forward impulse current: 0.6kA
Kind of package: tube
Power dissipation: 190W
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LAA710 LAA710 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE315C0C7&compId=LAA710.pdf?ci_sign=b2d02e6844589e18e4a056c1288bc9c7353c6607 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
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LAA710S LAA710S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE315C0C7&compId=LAA710.pdf?ci_sign=b2d02e6844589e18e4a056c1288bc9c7353c6607 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
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LAA710STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE315C0C7&compId=LAA710.pdf?ci_sign=b2d02e6844589e18e4a056c1288bc9c7353c6607 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
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LOC110 LOC110 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6 Category: Optocouplers - others
Description: Optocoupler; THT; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: photodiode
auf Bestellung 172 Stücke:
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18+3.99 EUR
35+2.06 EUR
37+1.96 EUR
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LOC110S LOC110S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6 Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: photodiode; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Insulation voltage: 3.75kV
Kind of output: photodiode
auf Bestellung 490 Stücke:
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17+4.26 EUR
35+2.06 EUR
37+1.94 EUR
100+1.93 EUR
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LOC110P LOC110P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
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LOC110PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
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LOC110STR LOC110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
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CPC2907B CPC2907B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891C20C7&compId=CPC2907B.pdf?ci_sign=a420b940460f63d53df36ffc1c7c33e2994b12e8 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Operating temperature: -40...85°C
Case: PowerSO8
On-state resistance: 0.15Ω
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Body dimensions: 21.08x10.16x3.3mm
Kind of output: MOSFET
Insulation voltage: 4kV
Contacts configuration: SPST-NO x2
Max. operating current: 2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
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7+11.47 EUR
8+9.37 EUR
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IXFR44N80P IXFR44N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC577820&compId=IXFR44N80P.pdf?ci_sign=51db11391181a2835bbd75c1ae0c474b83eb49a1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MG12300D-BN2MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: Y3-DCB
Produkt ist nicht verfügbar
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DSEI8-06AS-TUB DSEI8-06AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4DA1E4FAF60C4&compId=DSEI8-06A_DSEI8-06AS.pdf?ci_sign=bfe55369decdc2777973e475f80101adee4fb738 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; TO263AB; Ufmax: 1.3V; 50W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Power dissipation: 50W
Technology: FRED
Kind of package: tube
auf Bestellung 30 Stücke:
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25+2.92 EUR
30+2.39 EUR
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IXDD614SI IXDD614SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 130ns
Turn-on time: 140ns
Kind of output: non-inverting
auf Bestellung 319 Stücke:
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14+5.28 EUR
20+3.7 EUR
21+3.5 EUR
50+3.36 EUR
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IXDD614PI IXDD614PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 130ns
Turn-on time: 140ns
Kind of output: non-inverting
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23+3.2 EUR
33+2.17 EUR
35+2.04 EUR
500+1.97 EUR
Mindestbestellmenge: 23
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IXDD614YI IXDD614YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 640 Stücke:
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10+7.15 EUR
17+4.22 EUR
50+4.06 EUR
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IXDD614SITR IXYS littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
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IXDN614PI IXDN614PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.08 EUR
36+2 EUR
38+1.89 EUR
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IXGT16N170A IXGT16N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38 Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 11A
Pulsed collector current: 40A
Turn-on time: 35ns
Turn-off time: 298ns
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 70nC
Technology: NPT
Mounting: SMD
Case: TO268
Produkt ist nicht verfügbar
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IXGT16N170 IXGT16N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAB99F1D44C151BF&compId=IXGH16N170-DTE.pdf?ci_sign=03a18b66e5d35198e9e236f78cf7b52f7cc4d616 Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 16A
Pulsed collector current: 80A
Turn-on time: 90ns
Turn-off time: 1.6µs
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 78nC
Technology: NPT
Mounting: SMD
Case: TO268
Produkt ist nicht verfügbar
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IXGT16N170AH1 IXGT16N170AH1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38 Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 11A
Pulsed collector current: 40A
Turn-on time: 35ns
Turn-off time: 298ns
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 70nC
Technology: NPT
Mounting: SMD
Case: TO268
Produkt ist nicht verfügbar
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IXTY2N100P IXTY2N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA1618BD17820&compId=IXTA(P%2CY)2N100P.pdf?ci_sign=ed9b99ae18ad9cc7de5cc0535e18145ae9cd8895 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Reverse recovery time: 800ns
Drain-source voltage: 1kV
Drain current: 2A
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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IXTA2N100P IXTA2N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA1618BD17820&compId=IXTA(P%2CY)2N100P.pdf?ci_sign=ed9b99ae18ad9cc7de5cc0535e18145ae9cd8895 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Reverse recovery time: 800ns
Drain-source voltage: 1kV
Drain current: 2A
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.32 EUR
25+2.92 EUR
28+2.63 EUR
29+2.49 EUR
50+2.46 EUR
Mindestbestellmenge: 22
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IXTX22N100L IXTX22N100L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD1D9980B2F820&compId=IXTK(X)22N100L.pdf?ci_sign=0615493c1b1063422d61a154cca03734f6f66ba8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
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IXFN52N100X IXFN52N100X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7BFE6B4303820&compId=IXFN52N100X.pdf?ci_sign=6faa9317751d0bee219574a5021961c804a68910 Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 260ns
Technology: HiPerFET™; X-Class
Semiconductor structure: single transistor
Pulsed drain current: 100A
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXFT16N120P IXFT16N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D34FC31C383820&compId=IXFH(T)16N120P.pdf?ci_sign=62d379b539b652daa07e99793c202834e0bb54aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Mounting: SMD
Case: TO268
Drain-source voltage: 1.2kV
Drain current: 16A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 660W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.12µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT70N20Q3 IXFT70N20Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D43ABF543E3820&compId=IXFH(T)70N20Q3.pdf?ci_sign=be45f1d929df193dd38505d25feb4e73fd60918a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268
Mounting: SMD
Case: TO268
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT20N80P IXFT20N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BAC9F090E31820&compId=IXFH(T%2CV)20N80P_S.pdf?ci_sign=74430f59b0fdd807ea4aaf1fe8095eb0837487f6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Case: TO268
Kind of channel: enhancement
Mounting: SMD
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Gate charge: 86nC
Produkt ist nicht verfügbar
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IXFT220N20X3HV IXFT220N20X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Case: TO268
Mounting: SMD
Reverse recovery time: 116ns
Drain-source voltage: 200V
Drain current: 220A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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CPC3703CTR CPC3703CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE791A002DE6F22C746&compId=CPC3703.pdf?ci_sign=cdc9bcfb7bdb77eb3d2d4a05f7238b30e900d599 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 2002 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
73+0.99 EUR
134+0.54 EUR
142+0.51 EUR
1000+0.49 EUR
Mindestbestellmenge: 55
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VUM33-06PH VUM33-06PH IXYS media?resourcetype=datasheets&itemid=35E1EAD4-02BD-42D5-B91A-46AE09552393&filename=Littelfuse-Power-Semiconductors-VUM33-06PH-Datasheet Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 50A; V1-B-Pack; FASTON connectors
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 50A
Case: V1-B-Pack
Topology: boost chopper; single-phase diode bridge
Electrical mounting: FASTON connectors
Polarisation: unipolar
On-state resistance: 0.12Ω
Power dissipation: 500W
Gate-source voltage: ±20V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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VMO60-05F IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 60A; TO240AA; Idm: 240A; 590W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 60A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 240A
Power dissipation: 590W
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 405nC
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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VMO650-01F IXYS VMO650-01F.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 690A; Y3-DCB; Idm: 2.78kA; 2.5kW
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 690A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.8mΩ
Pulsed drain current: 2.78kA
Power dissipation: 2.5kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 2.3µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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VMO550-01F IXYS VMO550-01F.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 590A; Y3-DCB; Idm: 2.36kA; 2.2kW
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 590A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 2.1mΩ
Pulsed drain current: 2.36kA
Power dissipation: 2.2kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 2µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXTQ69N30P IXTQ69N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D131A4635E27&compId=IXTQ69N30P-DTE.pdf?ci_sign=30ac47e4c9ca5a13d0405042e859205ebf2f7209 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO3P; 330ns
Case: TO3P
Reverse recovery time: 330ns
Drain-source voltage: 300V
Drain current: 69A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Gate charge: 156nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
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CPC1967J CPC1967J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82480C7&compId=CPC1967.pdf?ci_sign=1a9a97aaffccad77bd5336d5a50b8c41367b0354 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1350mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 20ms
On-state resistance: 0.85Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.9 EUR
Mindestbestellmenge: 4
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PLA150S PLA150S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Case: DIP6
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.39 EUR
18+4.19 EUR
19+3.96 EUR
Mindestbestellmenge: 14
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PLA150 PLA150 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Case: DIP6
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.33 EUR
18+4.16 EUR
19+3.93 EUR
50+3.9 EUR
Mindestbestellmenge: 14
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CPC1966YX6 CPC1966YX6 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82200C7&compId=CPC1966YX6.pdf?ci_sign=3627c14bdb96a92aa76e317f8bb40155f042cd56 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: instantaneous switching
Insulation voltage: 3.75kV
Turn-on time: 500µs
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.11 EUR
11+6.66 EUR
12+6.31 EUR
Mindestbestellmenge: 8
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CPC1981Y CPC1981Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B4C0C7&compId=CPC1981.pdf?ci_sign=49fda13fe6a6bae85cf657bec9b4905da8f5b07d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 180mA
Switched voltage: max. 1kV AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 18Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 2.5kV
Body dimensions: 21.08x10.16x3.3mm
Turn-off time: 5ms
Turn-on time: 10ms
Control current max.: 50mA
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.95 EUR
19+3.76 EUR
Mindestbestellmenge: 13
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CPC5603CTR CPC5603CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A67566F94DB8BF&compId=CPC5603.pdf?ci_sign=e714e258bc789b11f74bf228bdeffe81ffeed81b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 415V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
96+0.75 EUR
121+0.59 EUR
128+0.56 EUR
Mindestbestellmenge: 76
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IXTR40P50P IXTR40P50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E8662C8B4F8BF&compId=IXTR40P50P.pdf?ci_sign=594ef2e0778e8bf21dc4bfcab613b60b66c1e530 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 312W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 477ns
Drain-source voltage: -500V
Drain current: -22A
On-state resistance: 0.26Ω
Gate charge: 205nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.02 EUR
6+13.23 EUR
Mindestbestellmenge: 4
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IXTH140P10T IXTH140P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA04D36549478BF&compId=IXT_140P10T.pdf?ci_sign=82e79b46bffa7ad38449867cfa0dd075c83d0c9f Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 568W
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 130ns
Drain-source voltage: -100V
Drain current: -140A
On-state resistance: 10mΩ
Gate charge: 400nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
Mindestbestellmenge: 4
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IXTH140P05T IXTH140P05T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0BDE6F66F58BF&compId=IXT_140P05T.pdf?ci_sign=268333924a43654bc82c3125d67058d0e0a6216e Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 53ns
Drain-source voltage: -50V
Drain current: -140A
On-state resistance: 9mΩ
Gate charge: 200nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.04 EUR
9+8.31 EUR
30+8.18 EUR
Mindestbestellmenge: 7
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IXTP140P05T IXTP140P05T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0BDE6F66F58BF&compId=IXT_140P05T.pdf?ci_sign=268333924a43654bc82c3125d67058d0e0a6216e Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 53ns
Drain-source voltage: -50V
Drain current: -140A
On-state resistance: 9mΩ
Gate charge: 200nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 222 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.48 EUR
11+6.51 EUR
12+6.15 EUR
Mindestbestellmenge: 8
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IXTA140N12T2 IXTA140N12T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDE4D4C598B820&compId=IXTA(P)140N12T2.pdf?ci_sign=96847b55de5591e2d4cc16630b5a64962539e9ba Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 577W
Case: TO263
Mounting: SMD
Kind of package: tube
Reverse recovery time: 65ns
Drain-source voltage: 120V
Drain current: 140A
On-state resistance: 10mΩ
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 174nC
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.94 EUR
Mindestbestellmenge: 8
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IXTH12N70X2 IXTH12N70X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91807820&compId=IXTH12N70X2.pdf?ci_sign=98c9b07086da1e62cdc3bf271cfc9a447d4cf5d4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Power dissipation: 180W
Features of semiconductor devices: ultra junction x-class
Gate charge: 19nC
Produkt ist nicht verfügbar
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DSEI2X30-10B DSEI2x30-10B_DSEI2x31-10B.pdf
DSEI2X30-10B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 30A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 2V
Max. forward impulse current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+27.07 EUR
Mindestbestellmenge: 3
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IXTT360N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF1C858E7B820&compId=IXTH(T)360N055T2.pdf?ci_sign=23fb805fbce6e75a57fc84bdd4dfce3194e210b5
IXTT360N055T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO268
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 78ns
Produkt ist nicht verfügbar
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FMD15-06KC5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F522E6E4505820&compId=FMD15-06KC5.pdf?ci_sign=2f4352c0a860f23fb93ad3877941b2c9bd4b7589
FMD15-06KC5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 15A
Semiconductor structure: diode/transistor
Topology: boost chopper
Case: ISOPLUS i4-pac™ x024a
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: super junction coolmos
Gate charge: 40nC
Technology: HiPerDynFRED
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Drain-source voltage: 600V
Drain current: 15A
On-state resistance: 0.165Ω
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.65 EUR
Mindestbestellmenge: 5
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IXTA50N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34
IXTA50N20P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTA50N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4E4FF92DFD820&compId=IXTA(H%2CP%2CQ)50N25T.pdf?ci_sign=7e809dd509feff8e274b784c3f608f03c09bb7c0
IXTA50N25T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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CMA40E1600HR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB55D25969240C4&compId=CMA40E1600HR.pdf?ci_sign=6f80664eaf21c47f718bd7fb65bbdc0aa472624d
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Max. off-state voltage: 1.6kV
Max. load current: 63A
Load current: 40A
Gate current: 50/80mA
Max. forward impulse current: 470A
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: ISO247™
Produkt ist nicht verfügbar
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GUO40-16NO1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB45E9668858143&compId=GUO40-16NO1.pdf?ci_sign=42817d6c6b89c349de39c80517dc2b1e44dd5508
GUO40-16NO1
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.06V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.61 EUR
14+20.78 EUR
Mindestbestellmenge: 4
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IXTH24N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC5FF44FC238BF&compId=IXT_24N65X2.pdf?ci_sign=ca1ded67daf9910d4f25da90b1a96f8fc87d8744
IXTH24N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 36nC
Technology: X2-Class
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO247-3
Reverse recovery time: 390ns
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 0.145Ω
Produkt ist nicht verfügbar
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IXFA34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa34n65x3-datasheet?assetguid=7bd01bfc-f3d8-4755-8e6c-5e250cb5176f
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXFH34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet?assetguid=965e45cd-8715-4cf1-b85d-adaafdfc5ec2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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OMA160S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2699C0C7&compId=OMA160.pdf?ci_sign=81480a08d275770b533880aac2266f2ea5be6c1b
OMA160S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 125µs
Turn-off time: 125µs
Produkt ist nicht verfügbar
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OMA160STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2699C0C7&compId=OMA160.pdf?ci_sign=81480a08d275770b533880aac2266f2ea5be6c1b
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 125µs
Turn-off time: 125µs
Produkt ist nicht verfügbar
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MCC26-16io1B pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFC3E41A23D820&compId=MCC26-16io1B.pdf?ci_sign=5a4693dfb84ab6f98fba34db632238650400c5e0 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCC26-16io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; Ifsm: 520A; screw
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 520A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.27V
Type of semiconductor module: thyristor
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.97 EUR
Mindestbestellmenge: 3
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DSSS35-008AR pVersion=0046&contRep=ZT&docId=005056AB82531EE991CC1AE5618238BF&compId=DSSS35-008AR.pdf?ci_sign=7ea710e63520a5c453cdbdb74d880f191ed6aa31
DSSS35-008AR
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 35Ax2; ISOPLUS247™; 190W
Type of diode: Schottky rectifying
Case: ISOPLUS247™
Mounting: THT
Max. off-state voltage: 80V
Load current: 35A x2
Semiconductor structure: double series
Max. forward voltage: 0.68V
Max. forward impulse current: 0.6kA
Kind of package: tube
Power dissipation: 190W
Produkt ist nicht verfügbar
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LAA710 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE315C0C7&compId=LAA710.pdf?ci_sign=b2d02e6844589e18e4a056c1288bc9c7353c6607
LAA710
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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LAA710S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE315C0C7&compId=LAA710.pdf?ci_sign=b2d02e6844589e18e4a056c1288bc9c7353c6607
LAA710S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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LAA710STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE315C0C7&compId=LAA710.pdf?ci_sign=b2d02e6844589e18e4a056c1288bc9c7353c6607
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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LOC110 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6
LOC110
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; THT; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: photodiode
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.99 EUR
35+2.06 EUR
37+1.96 EUR
Mindestbestellmenge: 18
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LOC110S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6
LOC110S
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: photodiode; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Insulation voltage: 3.75kV
Kind of output: photodiode
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.26 EUR
35+2.06 EUR
37+1.94 EUR
100+1.93 EUR
Mindestbestellmenge: 17
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LOC110P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6
LOC110P
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
Produkt ist nicht verfügbar
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LOC110PTR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
Produkt ist nicht verfügbar
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LOC110STR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6
LOC110STR
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Produkt ist nicht verfügbar
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CPC2907B pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891C20C7&compId=CPC2907B.pdf?ci_sign=a420b940460f63d53df36ffc1c7c33e2994b12e8
CPC2907B
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Operating temperature: -40...85°C
Case: PowerSO8
On-state resistance: 0.15Ω
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Body dimensions: 21.08x10.16x3.3mm
Kind of output: MOSFET
Insulation voltage: 4kV
Contacts configuration: SPST-NO x2
Max. operating current: 2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.47 EUR
8+9.37 EUR
Mindestbestellmenge: 7
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IXFR44N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC577820&compId=IXFR44N80P.pdf?ci_sign=51db11391181a2835bbd75c1ae0c474b83eb49a1
IXFR44N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MG12300D-BN2MM
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: Y3-DCB
Produkt ist nicht verfügbar
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DSEI8-06AS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4DA1E4FAF60C4&compId=DSEI8-06A_DSEI8-06AS.pdf?ci_sign=bfe55369decdc2777973e475f80101adee4fb738
DSEI8-06AS-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; TO263AB; Ufmax: 1.3V; 50W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Power dissipation: 50W
Technology: FRED
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.92 EUR
30+2.39 EUR
Mindestbestellmenge: 25
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IXDD614SI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDD614SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 130ns
Turn-on time: 140ns
Kind of output: non-inverting
auf Bestellung 319 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.28 EUR
20+3.7 EUR
21+3.5 EUR
50+3.36 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXDD614PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDD614PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 130ns
Turn-on time: 140ns
Kind of output: non-inverting
auf Bestellung 1052 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.2 EUR
33+2.17 EUR
35+2.04 EUR
500+1.97 EUR
Mindestbestellmenge: 23
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IXDD614YI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDD614YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 640 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
17+4.22 EUR
50+4.06 EUR
Mindestbestellmenge: 10
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IXDD614SITR littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Produkt ist nicht verfügbar
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IXDN614PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDN614PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.08 EUR
36+2 EUR
38+1.89 EUR
Mindestbestellmenge: 18
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IXGT16N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38
IXGT16N170A
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 11A
Pulsed collector current: 40A
Turn-on time: 35ns
Turn-off time: 298ns
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 70nC
Technology: NPT
Mounting: SMD
Case: TO268
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGT16N170 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAB99F1D44C151BF&compId=IXGH16N170-DTE.pdf?ci_sign=03a18b66e5d35198e9e236f78cf7b52f7cc4d616
IXGT16N170
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 16A
Pulsed collector current: 80A
Turn-on time: 90ns
Turn-off time: 1.6µs
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 78nC
Technology: NPT
Mounting: SMD
Case: TO268
Produkt ist nicht verfügbar
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IXGT16N170AH1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38
IXGT16N170AH1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 11A
Pulsed collector current: 40A
Turn-on time: 35ns
Turn-off time: 298ns
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 70nC
Technology: NPT
Mounting: SMD
Case: TO268
Produkt ist nicht verfügbar
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IXTY2N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA1618BD17820&compId=IXTA(P%2CY)2N100P.pdf?ci_sign=ed9b99ae18ad9cc7de5cc0535e18145ae9cd8895
IXTY2N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Reverse recovery time: 800ns
Drain-source voltage: 1kV
Drain current: 2A
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTA2N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA1618BD17820&compId=IXTA(P%2CY)2N100P.pdf?ci_sign=ed9b99ae18ad9cc7de5cc0535e18145ae9cd8895
IXTA2N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Reverse recovery time: 800ns
Drain-source voltage: 1kV
Drain current: 2A
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.32 EUR
25+2.92 EUR
28+2.63 EUR
29+2.49 EUR
50+2.46 EUR
Mindestbestellmenge: 22
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IXTX22N100L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD1D9980B2F820&compId=IXTK(X)22N100L.pdf?ci_sign=0615493c1b1063422d61a154cca03734f6f66ba8
IXTX22N100L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
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IXFN52N100X pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7BFE6B4303820&compId=IXFN52N100X.pdf?ci_sign=6faa9317751d0bee219574a5021961c804a68910
IXFN52N100X
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 260ns
Technology: HiPerFET™; X-Class
Semiconductor structure: single transistor
Pulsed drain current: 100A
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXFT16N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D34FC31C383820&compId=IXFH(T)16N120P.pdf?ci_sign=62d379b539b652daa07e99793c202834e0bb54aa
IXFT16N120P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Mounting: SMD
Case: TO268
Drain-source voltage: 1.2kV
Drain current: 16A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 660W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.12µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT70N20Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D43ABF543E3820&compId=IXFH(T)70N20Q3.pdf?ci_sign=be45f1d929df193dd38505d25feb4e73fd60918a
IXFT70N20Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268
Mounting: SMD
Case: TO268
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT20N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BAC9F090E31820&compId=IXFH(T%2CV)20N80P_S.pdf?ci_sign=74430f59b0fdd807ea4aaf1fe8095eb0837487f6
IXFT20N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Case: TO268
Kind of channel: enhancement
Mounting: SMD
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Gate charge: 86nC
Produkt ist nicht verfügbar
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IXFT220N20X3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFT220N20X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Case: TO268
Mounting: SMD
Reverse recovery time: 116ns
Drain-source voltage: 200V
Drain current: 220A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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CPC3703CTR pVersion=0046&contRep=ZT&docId=005056AB752F1EE791A002DE6F22C746&compId=CPC3703.pdf?ci_sign=cdc9bcfb7bdb77eb3d2d4a05f7238b30e900d599
CPC3703CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 2002 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
73+0.99 EUR
134+0.54 EUR
142+0.51 EUR
1000+0.49 EUR
Mindestbestellmenge: 55
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VUM33-06PH media?resourcetype=datasheets&itemid=35E1EAD4-02BD-42D5-B91A-46AE09552393&filename=Littelfuse-Power-Semiconductors-VUM33-06PH-Datasheet
VUM33-06PH
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 50A; V1-B-Pack; FASTON connectors
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 50A
Case: V1-B-Pack
Topology: boost chopper; single-phase diode bridge
Electrical mounting: FASTON connectors
Polarisation: unipolar
On-state resistance: 0.12Ω
Power dissipation: 500W
Gate-source voltage: ±20V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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VMO60-05F pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 60A; TO240AA; Idm: 240A; 590W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 60A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 240A
Power dissipation: 590W
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 405nC
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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VMO650-01F VMO650-01F.pdf
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 690A; Y3-DCB; Idm: 2.78kA; 2.5kW
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 690A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.8mΩ
Pulsed drain current: 2.78kA
Power dissipation: 2.5kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 2.3µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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VMO550-01F VMO550-01F.pdf
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 590A; Y3-DCB; Idm: 2.36kA; 2.2kW
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 590A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 2.1mΩ
Pulsed drain current: 2.36kA
Power dissipation: 2.2kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 2µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXTQ69N30P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D131A4635E27&compId=IXTQ69N30P-DTE.pdf?ci_sign=30ac47e4c9ca5a13d0405042e859205ebf2f7209
IXTQ69N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO3P; 330ns
Case: TO3P
Reverse recovery time: 330ns
Drain-source voltage: 300V
Drain current: 69A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Gate charge: 156nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
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CPC1967J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82480C7&compId=CPC1967.pdf?ci_sign=1a9a97aaffccad77bd5336d5a50b8c41367b0354
CPC1967J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1350mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 20ms
On-state resistance: 0.85Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.9 EUR
Mindestbestellmenge: 4
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PLA150S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558
PLA150S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Case: DIP6
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.39 EUR
18+4.19 EUR
19+3.96 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
PLA150 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558
PLA150
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Case: DIP6
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.33 EUR
18+4.16 EUR
19+3.93 EUR
50+3.9 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
CPC1966YX6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82200C7&compId=CPC1966YX6.pdf?ci_sign=3627c14bdb96a92aa76e317f8bb40155f042cd56
CPC1966YX6
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: instantaneous switching
Insulation voltage: 3.75kV
Turn-on time: 500µs
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.11 EUR
11+6.66 EUR
12+6.31 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
CPC1981Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B4C0C7&compId=CPC1981.pdf?ci_sign=49fda13fe6a6bae85cf657bec9b4905da8f5b07d
CPC1981Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 180mA
Switched voltage: max. 1kV AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 18Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 2.5kV
Body dimensions: 21.08x10.16x3.3mm
Turn-off time: 5ms
Turn-on time: 10ms
Control current max.: 50mA
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.95 EUR
19+3.76 EUR
Mindestbestellmenge: 13
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CPC5603CTR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A67566F94DB8BF&compId=CPC5603.pdf?ci_sign=e714e258bc789b11f74bf228bdeffe81ffeed81b
CPC5603CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 415V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
96+0.75 EUR
121+0.59 EUR
128+0.56 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
IXTR40P50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E8662C8B4F8BF&compId=IXTR40P50P.pdf?ci_sign=594ef2e0778e8bf21dc4bfcab613b60b66c1e530
IXTR40P50P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 312W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 477ns
Drain-source voltage: -500V
Drain current: -22A
On-state resistance: 0.26Ω
Gate charge: 205nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.02 EUR
6+13.23 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXTH140P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA04D36549478BF&compId=IXT_140P10T.pdf?ci_sign=82e79b46bffa7ad38449867cfa0dd075c83d0c9f
IXTH140P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 568W
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 130ns
Drain-source voltage: -100V
Drain current: -140A
On-state resistance: 10mΩ
Gate charge: 400nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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IXTH140P05T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0BDE6F66F58BF&compId=IXT_140P05T.pdf?ci_sign=268333924a43654bc82c3125d67058d0e0a6216e
IXTH140P05T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 53ns
Drain-source voltage: -50V
Drain current: -140A
On-state resistance: 9mΩ
Gate charge: 200nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.04 EUR
9+8.31 EUR
30+8.18 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTP140P05T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0BDE6F66F58BF&compId=IXT_140P05T.pdf?ci_sign=268333924a43654bc82c3125d67058d0e0a6216e
IXTP140P05T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 53ns
Drain-source voltage: -50V
Drain current: -140A
On-state resistance: 9mΩ
Gate charge: 200nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 222 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.48 EUR
11+6.51 EUR
12+6.15 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTA140N12T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDE4D4C598B820&compId=IXTA(P)140N12T2.pdf?ci_sign=96847b55de5591e2d4cc16630b5a64962539e9ba
IXTA140N12T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 577W
Case: TO263
Mounting: SMD
Kind of package: tube
Reverse recovery time: 65ns
Drain-source voltage: 120V
Drain current: 140A
On-state resistance: 10mΩ
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 174nC
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTH12N70X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91807820&compId=IXTH12N70X2.pdf?ci_sign=98c9b07086da1e62cdc3bf271cfc9a447d4cf5d4
IXTH12N70X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Power dissipation: 180W
Features of semiconductor devices: ultra junction x-class
Gate charge: 19nC
Produkt ist nicht verfügbar
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