Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IXTA140N12T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 577W Case: TO263 Mounting: SMD Kind of package: tube Reverse recovery time: 65ns Drain-source voltage: 120V Drain current: 140A On-state resistance: 10mΩ Features of semiconductor devices: thrench gate power mosfet Gate charge: 174nC Kind of channel: enhancement |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXTH12N70X2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 12A Case: TO247-3 On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 270ns Power dissipation: 180W Features of semiconductor devices: ultra junction x-class Gate charge: 19nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IXTN62N50L | IXYS |
![]() Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A Polarisation: unipolar Power dissipation: 800W Case: SOT227B On-state resistance: 0.1Ω Electrical mounting: screw Mechanical mounting: screw Gate charge: 550nC Technology: Linear™ Kind of channel: enhancement Gate-source voltage: ±40V Pulsed drain current: 150A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Reverse recovery time: 0.5µs Drain-source voltage: 500V Drain current: 62A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
DSEI2X101-06A | IXYS |
![]() Description: Module: diode; double independent; 600V; If: 96Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 0.6kV Load current: 96A x2 Case: SOT227B Max. forward voltage: 1.25V Max. forward impulse current: 1.3kA Electrical mounting: screw Mechanical mounting: screw |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
DSEI2X31-12B | IXYS |
![]() ![]() Description: Module: diode; double independent; 1.2kV; If: 28Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 28A x2 Case: SOT227B Max. forward voltage: 2.55V Max. forward impulse current: 210A Electrical mounting: screw Mechanical mounting: screw |
auf Bestellung 103 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
DSEI60-10A | IXYS |
![]() ![]() Description: Diode: rectifying; THT; 1kV; 60A; tube; Ifsm: 500A; TO247-2; 189W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 0.5kA Case: TO247-2 Max. forward voltage: 1.8V Power dissipation: 189W Reverse recovery time: 35ns Technology: FRED |
auf Bestellung 276 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
DSEI12-06A | IXYS |
![]() ![]() Description: Diode: rectifying; THT; 600V; 14A; tube; Ifsm: 100A; TO220AC; 62W Case: TO220AC Max. off-state voltage: 0.6kV Max. forward voltage: 1.5V Load current: 14A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 100A Power dissipation: 62W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.39mm Mounting: THT |
auf Bestellung 869 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
DSEI8-06A | IXYS |
![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50W; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO220AC Max. forward voltage: 1.3V Max. forward impulse current: 100A Power dissipation: 50W Technology: FRED Kind of package: tube Heatsink thickness: 1.14...1.39mm |
auf Bestellung 166 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXFP72N30X3M | IXYS |
![]() ![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 36W; TO220FP Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 72A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 100ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
DSA15IM200UC | IXYS |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 200V Load current: 15A Semiconductor structure: single diode Max. forward voltage: 0.78V Max. forward impulse current: 200A Kind of package: reel; tape Power dissipation: 75W |
auf Bestellung 1792 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXGK50N120C3H1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264 Type of transistor: IGBT Power dissipation: 460W Case: TO264 Mounting: THT Gate charge: 196nC Kind of package: tube Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Turn-on time: 60ns Turn-off time: 485ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
DPG20C300PN | IXYS |
![]() Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W Mounting: THT Kind of package: tube Max. off-state voltage: 300V Max. forward voltage: 1.27V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 140A Power dissipation: 35W Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Case: TO220FP |
auf Bestellung 557 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
DPG20C200PN | IXYS |
![]() Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W Case: TO220FP Max. off-state voltage: 200V Max. forward voltage: 1.27V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 140A Power dissipation: 35W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Mounting: THT |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
DPG20C200PB | IXYS |
![]() Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W Case: TO220AB Max. off-state voltage: 200V Max. forward voltage: 1.27V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 140A Power dissipation: 65W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Mounting: THT |
auf Bestellung 112 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
DPG20C300PB | IXYS |
![]() Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W Mounting: THT Kind of package: tube Max. off-state voltage: 300V Max. forward voltage: 1.27V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 140A Power dissipation: 65W Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Case: TO220AB |
auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
DPG10I200PA | IXYS |
![]() Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W Case: TO220AC Max. off-state voltage: 200V Max. forward voltage: 1.27V Load current: 10A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 140A Power dissipation: 65W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Mounting: THT |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
DPG10I300PA | IXYS |
![]() Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 140A Case: TO220AC Max. forward voltage: 1.27V Heatsink thickness: 1.14...1.39mm Reverse recovery time: 35ns Technology: HiPerFRED™ 2nd Gen Power dissipation: 65W |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
DPG10I200PM | IXYS |
![]() Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W Case: TO220FP-2 Max. off-state voltage: 200V Max. forward voltage: 1.27V Load current: 10A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 140A Power dissipation: 35W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Mounting: THT |
auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXDN602PI | IXYS |
![]() Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Case: DIP8 Mounting: THT Kind of package: tube Output current: -2...2A Type of integrated circuit: driver Number of channels: 2 Kind of output: non-inverting Kind of integrated circuit: gate driver; low-side Operating temperature: -40...125°C Supply voltage: 4.5...35V Turn-on time: 93ns Turn-off time: 93ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IXDN602SIA | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 93ns Turn-on time: 93ns |
auf Bestellung 639 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IX9907N | IXYS |
![]() Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Output current: 1.7A Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 650V DC Kind of package: tube |
auf Bestellung 498 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IX9908N | IXYS |
![]() Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Output current: 1.7A Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 650V DC Kind of package: tube |
auf Bestellung 287 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
IXFH54N65X3 | IXYS |
![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 54A Pulsed drain current: 70A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 59mΩ Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; X3-Class Reverse recovery time: 140ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
CPC1965Y | IXYS |
![]() Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase Type of relay: solid state Control current max.: 100mA Max. operating current: 1A Switched voltage: max. 260V AC Relay variant: 1-phase Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 19.2x6.35x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV |
auf Bestellung 246 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
CPC1965G | IXYS |
![]() Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase Body dimensions: 19.2x7.62x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 1A Type of relay: solid state Relay variant: 1-phase Switched voltage: max. 260V AC Control current max.: 100mA Mounting: THT Operating temperature: -40...85°C Case: DIP4 |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
MEK300-06DA | IXYS |
![]() Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V Max. off-state voltage: 0.6kV Max. forward voltage: 1.19V Load current: 304A Semiconductor structure: common cathode Max. forward impulse current: 2.4kA Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode Case: Y4-M6 |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
DMA40U1800GU | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A Leads: flat pin Max. off-state voltage: 1.8kV Max. forward voltage: 0.74V Load current: 40A Max. forward impulse current: 370A Electrical mounting: THT Version: flat Type of bridge rectifier: three-phase Case: GUFP |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
CPC2330N | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Operating temperature: -40...85°C Case: SO8 On-state resistance: 30Ω Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Contacts configuration: SPST-NO + SPST-NC Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Mounting: SMT |
auf Bestellung 484 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXTP450P2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 43nC Reverse recovery time: 400ns Power dissipation: 300W On-state resistance: 0.33Ω Drain current: 16A Drain-source voltage: 500V Polarisation: unipolar Case: TO220AB Kind of channel: enhancement Mounting: THT |
auf Bestellung 176 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
CPC3909CTR | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89 Mounting: SMD Drain-source voltage: 400V Drain current: 0.3A On-state resistance: 9Ω Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±15V Case: SOT89 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
VBO130-16NO7 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 130A; Ifsm: 1.8kA Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 130A Max. forward impulse current: 1.8kA Electrical mounting: screw Mechanical mounting: screw Version: module Leads: M6 screws Case: PWS-E |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
VBO130-08NO7 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 130A; Ifsm: 1.8kA Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 130A Max. forward impulse current: 1.8kA Electrical mounting: screw Mechanical mounting: screw Version: module Leads: M6 screws Case: PWS-E |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
VBO130-12NO7 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 130A; Ifsm: 1.8kA Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 130A Max. forward impulse current: 1.8kA Electrical mounting: screw Mechanical mounting: screw Version: module Leads: M6 screws Case: PWS-E |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
VBO130-18NO7 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 130A; Ifsm: 1.8kA Type of bridge rectifier: single-phase Max. off-state voltage: 1.8kV Load current: 130A Max. forward impulse current: 1.8kA Electrical mounting: screw Mechanical mounting: screw Version: module Leads: M6 screws Case: PWS-E |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
MCD162-18io1 | IXYS |
![]() ![]() Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Max. off-state voltage: 1.8kV Load current: 181A Max. forward impulse current: 6kA Case: Y4-M6 Electrical mounting: FASTON connectors; screw Kind of package: bulk Max. forward voltage: 1.03V Threshold on-voltage: 0.88V Max. load current: 300A Semiconductor structure: double series Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
LBA710S | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 0.6Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
LBA710STR | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 0.6Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
PD2401 | IXYS |
![]() Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase Body dimensions: 19.2x6.35x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 1A Type of relay: solid state Relay variant: 1-phase Switched voltage: max. 500V AC Control current max.: 100mA Mounting: THT Operating temperature: -40...85°C Case: DIP4 |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXTP50N20P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns |
auf Bestellung 206 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXTQ50N20P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO3P Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns |
auf Bestellung 264 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXTP50N25T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO220AB On-state resistance: 60mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 166ns Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 341 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXTP50N20PM | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 20A Power dissipation: 90W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
CPC3720CTR | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.13A Power dissipation: 1.4W Case: SOT89 On-state resistance: 22Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±15V |
auf Bestellung 591 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXFK220N15P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 220A; 1250W; TO264 Case: TO264 Drain-source voltage: 150V Drain current: 220A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Gate charge: 162nC Kind of channel: enhancement Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IXDF602SIA | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: inverting; non-inverting Turn-on time: 93ns Turn-off time: 93ns |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXDF602SIATR | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: inverting; non-inverting Turn-on time: 93ns Turn-off time: 93ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IXTP270N04T4 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns Mounting: THT Drain-source voltage: 40V Drain current: 270A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 182nC Kind of channel: enhancement Case: TO220AB Reverse recovery time: 48ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IXTX110N20L2 | IXYS |
![]() Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 110A Power dissipation: 960W Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 420ns Technology: Linear L2™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
FUO22-16N | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 30A Max. forward impulse current: 150A Electrical mounting: THT Max. forward voltage: 1.2V Case: ISOPLUS i4-pac™ x024a |
auf Bestellung 142 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
VBO22-16NO8 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 14A Max. forward impulse current: 380A Electrical mounting: THT Version: square Leads: connectors FASTON Case: FO-B Kind of package: bulk |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
VUO122-16NO7 | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 125A; Ifsm: 1kA Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 125A Max. forward impulse current: 1kA Electrical mounting: THT Version: module Max. forward voltage: 1.13V Leads: wire Ø 1.5mm Case: ECO-PAC 2 Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MD16200S-DKM2MM | IXYS |
![]() Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S Type of semiconductor module: diode Semiconductor structure: common cathode; double Max. off-state voltage: 1.6kV Load current: 200A Case: package S Max. forward voltage: 1.5V Max. forward impulse current: 6.5kA Electrical mounting: screw Mechanical mounting: screw Max. load current: 310A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
IXDD604D2TR | IXYS |
![]() Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V Supply voltage: 4.5...35V Case: DFN8 Turn-on time: 81ns Turn-off time: 79ns Output current: -4...4A Type of integrated circuit: driver Number of channels: 2 Kind of output: non-inverting Kind of package: reel; tape Kind of integrated circuit: gate driver; low-side Mounting: SMD Operating temperature: -40...125°C |
auf Bestellung 87 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXDF604PI | IXYS |
![]() Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting; non-inverting Turn-off time: 79ns Turn-on time: 81ns |
auf Bestellung 502 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXDI604SIA | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-off time: 79ns Turn-on time: 81ns |
auf Bestellung 1064 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXFH12N120P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 543W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Power dissipation: 543W Case: TO247-3 Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 265 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
DSEP2X101-04A | IXYS |
![]() Description: Module: diode; double independent; 400V; If: 100Ax2; SOT227B; screw Max. off-state voltage: 0.4kV Max. forward voltage: 1.73V Load current: 100A x2 Semiconductor structure: double independent Max. forward impulse current: 1kA Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode Case: SOT227B |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
DSA30C100HB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO247-3; Ufmax: 0.72V Mounting: THT Case: TO247-3 Max. off-state voltage: 100V Max. forward voltage: 0.72V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 340A Power dissipation: 85W Kind of package: tube Type of diode: Schottky rectifying |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
DSA30C45PC | IXYS |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape; 85W Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.63V Max. forward impulse current: 340A Kind of package: reel; tape Power dissipation: 85W |
auf Bestellung 690 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
CPC1301G | IXYS |
![]() Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; DIP4; 250mV/μs Type of optocoupler: optocoupler Insulation voltage: 5kV Kind of output: Darlington Case: DIP4 Mounting: THT Number of channels: 1 Slew rate: 0.25V/μs Turn-on time: 1µs Turn-off time: 60µs Trigger current: 50mA CTR@If: 1000-8000%@1mA Max. off-state voltage: 5V |
auf Bestellung 419 Stücke: Lieferzeit 14-21 Tag (e) |
|
IXTA140N12T2 |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 577W
Case: TO263
Mounting: SMD
Kind of package: tube
Reverse recovery time: 65ns
Drain-source voltage: 120V
Drain current: 140A
On-state resistance: 10mΩ
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 174nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 577W
Case: TO263
Mounting: SMD
Kind of package: tube
Reverse recovery time: 65ns
Drain-source voltage: 120V
Drain current: 140A
On-state resistance: 10mΩ
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 174nC
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 8.94 EUR |
IXTH12N70X2 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Power dissipation: 180W
Features of semiconductor devices: ultra junction x-class
Gate charge: 19nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Power dissipation: 180W
Features of semiconductor devices: ultra junction x-class
Gate charge: 19nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTN62N50L |
![]() |
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Power dissipation: 800W
Case: SOT227B
On-state resistance: 0.1Ω
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 550nC
Technology: Linear™
Kind of channel: enhancement
Gate-source voltage: ±40V
Pulsed drain current: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 62A
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Power dissipation: 800W
Case: SOT227B
On-state resistance: 0.1Ω
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 550nC
Technology: Linear™
Kind of channel: enhancement
Gate-source voltage: ±40V
Pulsed drain current: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 62A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DSEI2X101-06A |
![]() |
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 96A x2
Case: SOT227B
Max. forward voltage: 1.25V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 96A x2
Case: SOT227B
Max. forward voltage: 1.25V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.99 EUR |
30+ | 35.19 EUR |
DSEI2X31-12B | ![]() |
![]() |
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 28Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 28A x2
Case: SOT227B
Max. forward voltage: 2.55V
Max. forward impulse current: 210A
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 28Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 28A x2
Case: SOT227B
Max. forward voltage: 2.55V
Max. forward impulse current: 210A
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 24.75 EUR |
10+ | 23.8 EUR |
DSEI60-10A | ![]() |
![]() |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; tube; Ifsm: 500A; TO247-2; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.8V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; tube; Ifsm: 500A; TO247-2; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.8V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.59 EUR |
10+ | 7.15 EUR |
11+ | 6.76 EUR |
120+ | 6.66 EUR |
DSEI12-06A | ![]() |
![]() |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 14A; tube; Ifsm: 100A; TO220AC; 62W
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.5V
Load current: 14A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Power dissipation: 62W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 14A; tube; Ifsm: 100A; TO220AC; 62W
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.5V
Load current: 14A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Power dissipation: 62W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.39mm
Mounting: THT
auf Bestellung 869 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.16 EUR |
36+ | 2 EUR |
38+ | 1.89 EUR |
500+ | 1.82 EUR |
DSEI8-06A |
![]() |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50W; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Power dissipation: 50W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50W; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Power dissipation: 50W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.52 EUR |
35+ | 2.07 EUR |
46+ | 1.56 EUR |
49+ | 1.47 EUR |
IXFP72N30X3M |
![]() ![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DSA15IM200UC |
![]() |
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
auf Bestellung 1792 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 2.03 EUR |
47+ | 1.54 EUR |
59+ | 1.23 EUR |
62+ | 1.16 EUR |
500+ | 1.14 EUR |
IXGK50N120C3H1 |
![]() |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Type of transistor: IGBT
Power dissipation: 460W
Case: TO264
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Type of transistor: IGBT
Power dissipation: 460W
Case: TO264
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DPG20C300PN |
![]() |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP
auf Bestellung 557 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.23 EUR |
36+ | 2.02 EUR |
41+ | 1.77 EUR |
45+ | 1.6 EUR |
48+ | 1.52 EUR |
250+ | 1.49 EUR |
DPG20C200PN |
![]() |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Case: TO220FP
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Case: TO220FP
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.66 EUR |
36+ | 2 EUR |
38+ | 1.89 EUR |
DPG20C200PB |
![]() |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Case: TO220AB
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Case: TO220AB
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.2 EUR |
53+ | 1.36 EUR |
56+ | 1.29 EUR |
DPG20C300PB |
![]() |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Mounting: THT
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.76 EUR |
29+ | 2.53 EUR |
36+ | 2 EUR |
38+ | 1.9 EUR |
DPG10I200PA |
![]() |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Case: TO220AC
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Case: TO220AC
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.13 EUR |
40+ | 1.82 EUR |
54+ | 1.34 EUR |
57+ | 1.27 EUR |
DPG10I300PA |
![]() |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220AC
Max. forward voltage: 1.27V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
Power dissipation: 65W
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220AC
Max. forward voltage: 1.27V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
Power dissipation: 65W
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.56 EUR |
DPG10I200PM |
![]() |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Case: TO220FP-2
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Case: TO220FP-2
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.07 EUR |
56+ | 1.27 EUR |
IXDN602PI |
![]() |
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Case: DIP8
Mounting: THT
Kind of package: tube
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Case: DIP8
Mounting: THT
Kind of package: tube
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXDN602SIA |
![]() |
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 93ns
Turn-on time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 93ns
Turn-on time: 93ns
auf Bestellung 639 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.62 EUR |
65+ | 1.12 EUR |
70+ | 1.03 EUR |
74+ | 0.97 EUR |
100+ | 0.96 EUR |
300+ | 0.94 EUR |
IX9907N |
![]() |
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
IX9908N |
![]() |
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
87+ | 0.83 EUR |
97+ | 0.74 EUR |
109+ | 0.66 EUR |
125+ | 0.57 EUR |
132+ | 0.54 EUR |
IXFH54N65X3 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 140ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1965Y |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.05 EUR |
18+ | 4.19 EUR |
19+ | 3.96 EUR |
CPC1965G |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Body dimensions: 19.2x7.62x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 260V AC
Control current max.: 100mA
Mounting: THT
Operating temperature: -40...85°C
Case: DIP4
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Body dimensions: 19.2x7.62x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 260V AC
Control current max.: 100mA
Mounting: THT
Operating temperature: -40...85°C
Case: DIP4
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.39 EUR |
18+ | 4.03 EUR |
19+ | 3.82 EUR |
MEK300-06DA |
![]() |
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: common cathode
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: Y4-M6
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: common cathode
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: Y4-M6
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 87 EUR |
6+ | 86.41 EUR |
12+ | 83.9 EUR |
DMA40U1800GU |
![]() |
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.8kV
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.8kV
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.37 EUR |
7+ | 10.61 EUR |
8+ | 10.04 EUR |
CPC2330N |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Operating temperature: -40...85°C
Case: SO8
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Operating temperature: -40...85°C
Case: SO8
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
auf Bestellung 484 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.59 EUR |
32+ | 2.25 EUR |
34+ | 2.13 EUR |
IXTP450P2 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Reverse recovery time: 400ns
Power dissipation: 300W
On-state resistance: 0.33Ω
Drain current: 16A
Drain-source voltage: 500V
Polarisation: unipolar
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Reverse recovery time: 400ns
Power dissipation: 300W
On-state resistance: 0.33Ω
Drain current: 16A
Drain-source voltage: 500V
Polarisation: unipolar
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.86 EUR |
23+ | 3.17 EUR |
24+ | 3 EUR |
100+ | 2.89 EUR |
CPC3909CTR |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89
Mounting: SMD
Drain-source voltage: 400V
Drain current: 0.3A
On-state resistance: 9Ω
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Case: SOT89
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89
Mounting: SMD
Drain-source voltage: 400V
Drain current: 0.3A
On-state resistance: 9Ω
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Case: SOT89
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VBO130-16NO7 |
![]() |
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VBO130-08NO7 |
![]() |
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VBO130-12NO7 |
![]() |
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VBO130-18NO7 |
![]() |
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.8kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 130A; Ifsm: 1.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.8kV
Load current: 130A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCD162-18io1 |
![]() ![]() |
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. off-state voltage: 1.8kV
Load current: 181A
Max. forward impulse current: 6kA
Case: Y4-M6
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.03V
Threshold on-voltage: 0.88V
Max. load current: 300A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. off-state voltage: 1.8kV
Load current: 181A
Max. forward impulse current: 6kA
Case: Y4-M6
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.03V
Threshold on-voltage: 0.88V
Max. load current: 300A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 79.26 EUR |
6+ | 76.71 EUR |
LBA710S |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LBA710STR |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PD2401 |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: THT
Operating temperature: -40...85°C
Case: DIP4
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: THT
Operating temperature: -40...85°C
Case: DIP4
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.22 EUR |
11+ | 6.51 EUR |
12+ | 6.16 EUR |
IXTP50N20P |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.89 EUR |
22+ | 3.4 EUR |
23+ | 3.22 EUR |
IXTQ50N20P |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.29 EUR |
19+ | 3.95 EUR |
20+ | 3.73 EUR |
IXTP50N25T |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 341 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.25 EUR |
17+ | 4.29 EUR |
18+ | 4.06 EUR |
IXTP50N20PM |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC3720CTR |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 591 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
103+ | 0.7 EUR |
182+ | 0.39 EUR |
199+ | 0.36 EUR |
258+ | 0.28 EUR |
274+ | 0.26 EUR |
IXFK220N15P |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 220A; 1250W; TO264
Case: TO264
Drain-source voltage: 150V
Drain current: 220A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 162nC
Kind of channel: enhancement
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 220A; 1250W; TO264
Case: TO264
Drain-source voltage: 150V
Drain current: 220A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 162nC
Kind of channel: enhancement
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXDF602SIA |
![]() |
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.64 EUR |
50+ | 1.44 EUR |
76+ | 0.94 EUR |
81+ | 0.89 EUR |
IXDF602SIATR |
![]() |
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTP270N04T4 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Mounting: THT
Drain-source voltage: 40V
Drain current: 270A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Kind of channel: enhancement
Case: TO220AB
Reverse recovery time: 48ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Mounting: THT
Drain-source voltage: 40V
Drain current: 270A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Kind of channel: enhancement
Case: TO220AB
Reverse recovery time: 48ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTX110N20L2 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
Technology: Linear L2™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
Technology: Linear L2™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FUO22-16N |
![]() |
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 19.1 EUR |
10+ | 18.78 EUR |
25+ | 18.36 EUR |
VBO22-16NO8 |
![]() |
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 14A
Max. forward impulse current: 380A
Electrical mounting: THT
Version: square
Leads: connectors FASTON
Case: FO-B
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 14A
Max. forward impulse current: 380A
Electrical mounting: THT
Version: square
Leads: connectors FASTON
Case: FO-B
Kind of package: bulk
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 16.3 EUR |
6+ | 12.37 EUR |
50+ | 12.17 EUR |
VUO122-16NO7 |
![]() |
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 125A; Ifsm: 1kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 125A
Max. forward impulse current: 1kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.13V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 125A; Ifsm: 1kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 125A
Max. forward impulse current: 1kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.13V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MD16200S-DKM2MM |
![]() |
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 200A
Case: package S
Max. forward voltage: 1.5V
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 310A
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 200A
Case: package S
Max. forward voltage: 1.5V
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 310A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXDD604D2TR |
![]() |
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Supply voltage: 4.5...35V
Case: DFN8
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Supply voltage: 4.5...35V
Case: DFN8
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Operating temperature: -40...125°C
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.26 EUR |
44+ | 1.64 EUR |
48+ | 1.5 EUR |
51+ | 1.42 EUR |
IXDF604PI |
![]() |
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
auf Bestellung 502 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 2.03 EUR |
39+ | 1.87 EUR |
53+ | 1.37 EUR |
55+ | 1.3 EUR |
500+ | 1.26 EUR |
IXDI604SIA |
![]() |
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 79ns
Turn-on time: 81ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 79ns
Turn-on time: 81ns
auf Bestellung 1064 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.26 EUR |
44+ | 1.64 EUR |
49+ | 1.49 EUR |
51+ | 1.42 EUR |
100+ | 1.37 EUR |
200+ | 1.36 EUR |
IXFH12N120P |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 543W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Power dissipation: 543W
Case: TO247-3
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 543W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Power dissipation: 543W
Case: TO247-3
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 19.68 EUR |
5+ | 14.97 EUR |
DSEP2X101-04A |
![]() |
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 100Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.73V
Load current: 100A x2
Semiconductor structure: double independent
Max. forward impulse current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SOT227B
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 100Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.73V
Load current: 100A x2
Semiconductor structure: double independent
Max. forward impulse current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SOT227B
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 46.89 EUR |
10+ | 46.68 EUR |
DSA30C100HB |
![]() |
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO247-3; Ufmax: 0.72V
Mounting: THT
Case: TO247-3
Max. off-state voltage: 100V
Max. forward voltage: 0.72V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO247-3; Ufmax: 0.72V
Mounting: THT
Case: TO247-3
Max. off-state voltage: 100V
Max. forward voltage: 0.72V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Type of diode: Schottky rectifying
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.79 EUR |
21+ | 3.43 EUR |
27+ | 2.72 EUR |
28+ | 2.57 EUR |
DSA30C45PC |
![]() |
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape; 85W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.63V
Max. forward impulse current: 340A
Kind of package: reel; tape
Power dissipation: 85W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape; 85W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.63V
Max. forward impulse current: 340A
Kind of package: reel; tape
Power dissipation: 85W
auf Bestellung 690 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
105+ | 0.69 EUR |
109+ | 0.66 EUR |
114+ | 0.63 EUR |
CPC1301G |
![]() |
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; DIP4; 250mV/μs
Type of optocoupler: optocoupler
Insulation voltage: 5kV
Kind of output: Darlington
Case: DIP4
Mounting: THT
Number of channels: 1
Slew rate: 0.25V/μs
Turn-on time: 1µs
Turn-off time: 60µs
Trigger current: 50mA
CTR@If: 1000-8000%@1mA
Max. off-state voltage: 5V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; DIP4; 250mV/μs
Type of optocoupler: optocoupler
Insulation voltage: 5kV
Kind of output: Darlington
Case: DIP4
Mounting: THT
Number of channels: 1
Slew rate: 0.25V/μs
Turn-on time: 1µs
Turn-off time: 60µs
Trigger current: 50mA
CTR@If: 1000-8000%@1mA
Max. off-state voltage: 5V
auf Bestellung 419 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.79 EUR |
61+ | 1.17 EUR |
64+ | 1.13 EUR |
68+ | 1.06 EUR |
69+ | 1.04 EUR |
100+ | 1.03 EUR |