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VMO60-05F IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 60A; TO240AA; Idm: 240A; 590W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 60A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 240A
Power dissipation: 590W
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 405nC
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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CPC1967J CPC1967J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82480C7&compId=CPC1967.pdf?ci_sign=1a9a97aaffccad77bd5336d5a50b8c41367b0354 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
On-state resistance: 0.85Ω
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Kind of output: MOSFET
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
Max. operating current: 1350mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 100mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: i4-pac
auf Bestellung 99 Stücke:
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4+18.9 EUR
25+18.32 EUR
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CPC1966YX6 CPC1966YX6 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82200C7&compId=CPC1966YX6.pdf?ci_sign=3627c14bdb96a92aa76e317f8bb40155f042cd56 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: instantaneous switching
Insulation voltage: 3.75kV
Turn-on time: 500µs
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.78 EUR
11+6.66 EUR
12+6.29 EUR
25+6.06 EUR
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CPC1981Y CPC1981Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B4C0C7&compId=CPC1981.pdf?ci_sign=49fda13fe6a6bae85cf657bec9b4905da8f5b07d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 180mA
Switched voltage: max. 1kV AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 18Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 10ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
auf Bestellung 19 Stücke:
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13+5.95 EUR
19+3.76 EUR
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CPC5603CTR CPC5603CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A67566F94DB8BF&compId=CPC5603.pdf?ci_sign=e714e258bc789b11f74bf228bdeffe81ffeed81b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 415V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 485 Stücke:
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76+0.94 EUR
96+0.75 EUR
121+0.59 EUR
128+0.56 EUR
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IXTR40P50P IXTR40P50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E8662C8B4F8BF&compId=IXTR40P50P.pdf?ci_sign=594ef2e0778e8bf21dc4bfcab613b60b66c1e530 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 312W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 477ns
Drain-source voltage: -500V
Drain current: -22A
On-state resistance: 0.26Ω
Gate charge: 205nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 18 Stücke:
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4+18.02 EUR
6+13.23 EUR
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IXTH140P10T IXTH140P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA04D36549478BF&compId=IXT_140P10T.pdf?ci_sign=82e79b46bffa7ad38449867cfa0dd075c83d0c9f Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 568W
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 130ns
Drain-source voltage: -100V
Drain current: -140A
On-state resistance: 10mΩ
Gate charge: 400nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 4 Stücke:
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4+17.88 EUR
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IXTH140P05T IXTH140P05T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0BDE6F66F58BF&compId=IXT_140P05T.pdf?ci_sign=268333924a43654bc82c3125d67058d0e0a6216e Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 53ns
Drain-source voltage: -50V
Drain current: -140A
On-state resistance: 9mΩ
Gate charge: 200nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 293 Stücke:
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7+11.63 EUR
9+8.31 EUR
30+8.27 EUR
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IXTP140P05T IXTP140P05T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0BDE6F66F58BF&compId=IXT_140P05T.pdf?ci_sign=268333924a43654bc82c3125d67058d0e0a6216e Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 53ns
Drain-source voltage: -50V
Drain current: -140A
On-state resistance: 9mΩ
Gate charge: 200nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 222 Stücke:
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9+8.82 EUR
11+6.51 EUR
12+6.15 EUR
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IXTA140N12T2 IXTA140N12T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDE4D4C598B820&compId=IXTA(P)140N12T2.pdf?ci_sign=96847b55de5591e2d4cc16630b5a64962539e9ba Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO263
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 174nC
Kind of package: tube
Reverse recovery time: 65ns
Features of semiconductor devices: thrench gate power mosfet
Kind of channel: enhancement
auf Bestellung 8 Stücke:
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8+8.94 EUR
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IXTH12N70X2 IXTH12N70X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91807820&compId=IXTH12N70X2.pdf?ci_sign=98c9b07086da1e62cdc3bf271cfc9a447d4cf5d4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Power dissipation: 180W
Features of semiconductor devices: ultra junction x-class
Gate charge: 19nC
Produkt ist nicht verfügbar
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DSEI2X101-06A DSEI2X101-06A IXYS pVersion=0046&contRep=ZT&docId=E1C04A8FCC4F92F1A6F5005056AB5A8F&compId=DSEI2x101-06A.pdf?ci_sign=09b084b06228819067d2329633b0aef8070e24cb Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 96A x2
Case: SOT227B
Max. forward voltage: 1.25V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 4 Stücke:
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2+35.99 EUR
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DSEI12-06A DSEI12-06A IXYS pVersion=0046&contRep=ZT&docId=E269244771F7DAF1A303005056AB0C4F&compId=DSEI12-06A.pdf?ci_sign=1a0272622fb5d81809dede3e61b8d2bfcae11f38 description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 14A; tube; Ifsm: 100A; TO220AC; 62W
Semiconductor structure: single diode
Case: TO220AC
Features of semiconductor devices: fast switching
Mounting: THT
Technology: FRED
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.5V
Max. forward impulse current: 100A
Power dissipation: 62W
Load current: 14A
Max. off-state voltage: 0.6kV
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.93 EUR
36+2 EUR
38+1.89 EUR
50+1.87 EUR
Mindestbestellmenge: 25
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DSA15IM200UC DSA15IM200UC IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C8FD8A880F38BF&compId=DSA15IM200UC.pdf?ci_sign=056317a4f5de6751e61974d806a68417d45989a7 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
auf Bestellung 1744 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.03 EUR
47+1.54 EUR
59+1.23 EUR
62+1.16 EUR
500+1.14 EUR
Mindestbestellmenge: 36
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DPG20C300PN DPG20C300PN IXYS Littelfuse-Power-Semiconductors-DPG20C300PN-Datasheet?assetguid=81A91808-9E32-4874-B0CD-3B7F01F1EA7E Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220FP
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Power dissipation: 35W
Max. forward voltage: 1.27V
Max. forward impulse current: 140A
Load current: 10A x2
Max. off-state voltage: 300V
auf Bestellung 557 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.23 EUR
36+2.02 EUR
41+1.77 EUR
45+1.6 EUR
48+1.52 EUR
250+1.49 EUR
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DPG20C300PB DPG20C300PB IXYS DPG20C300PB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 65W
Max. forward voltage: 1.27V
Max. forward impulse current: 140A
Load current: 10A x2
Max. off-state voltage: 300V
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.76 EUR
29+2.53 EUR
36+2 EUR
38+1.9 EUR
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IXDN602PI IXDN602PI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Number of channels: 2
Output current: -2...2A
Supply voltage: 4.5...35V
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 93ns
Turn-off time: 93ns
Kind of package: tube
Case: DIP8
Type of integrated circuit: driver
Mounting: THT
Kind of integrated circuit: gate driver; low-side
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.62 EUR
61+1.17 EUR
68+1.06 EUR
72+1 EUR
100+0.97 EUR
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IXDN602SIA IXDN602SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Number of channels: 2
Output current: -2...2A
Supply voltage: 4.5...35V
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 93ns
Turn-off time: 93ns
Kind of package: tube
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
auf Bestellung 614 Stücke:
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45+1.62 EUR
65+1.12 EUR
70+1.03 EUR
74+0.97 EUR
100+0.96 EUR
300+0.94 EUR
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CPC1965G CPC1965G IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A44BA23226F8BF&compId=CPC1965G.pdf?ci_sign=3a2396cdfa67a4109f17be1dd9e9ffa31f3979f0 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x7.62x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
auf Bestellung 88 Stücke:
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12+6.39 EUR
18+4.05 EUR
19+3.82 EUR
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MEK300-06DA MEK300-06DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Electrical mounting: screw
Type of semiconductor module: diode
Case: Y4-M6
Mechanical mounting: screw
Max. forward voltage: 1.19V
Load current: 304A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 2.4kA
Semiconductor structure: common cathode
auf Bestellung 22 Stücke:
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1+83.66 EUR
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CPC2330N CPC2330N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891AC0C7&compId=CPC2330N.pdf?ci_sign=029ea682cdcd4f7973c59961ae0fa6d8e53884ee Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Case: SO8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
auf Bestellung 484 Stücke:
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20+3.59 EUR
32+2.25 EUR
34+2.13 EUR
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IXTP450P2 IXTP450P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55001B8D0D820&compId=IXTH(P%2CQ)450P2.pdf?ci_sign=bd2a070be623e6483ee1ebfc57c7e655c7dd0ea6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Reverse recovery time: 400ns
Power dissipation: 300W
On-state resistance: 0.33Ω
Drain current: 16A
Drain-source voltage: 500V
Polarisation: unipolar
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.86 EUR
23+3.17 EUR
24+3 EUR
100+2.89 EUR
Mindestbestellmenge: 13
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MCD162-18io1 MCD162-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01F68DDF93E27&compId=MCD162-18IO1-DTE.pdf?ci_sign=455e3bcba99267b8d353287e50d54a847388ebe6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. forward voltage: 1.03V
Load current: 181A
Max. load current: 300A
Max. forward impulse current: 6kA
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
1+79.26 EUR
6+76.71 EUR
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PD2401 PD2401 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98480C7&compId=PD2401.pdf?ci_sign=a60ef1f1aa10789c66a0d571757966686af45183 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Mounting: THT
Case: DIP4
Switching method: zero voltage switching
Type of relay: solid state
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.22 EUR
11+6.51 EUR
12+6.16 EUR
Mindestbestellmenge: 10
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IXTP50N20P IXTP50N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
auf Bestellung 206 Stücke:
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22+3.4 EUR
23+3.22 EUR
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IXTQ50N20P IXTQ50N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
auf Bestellung 264 Stücke:
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12+6.29 EUR
19+3.95 EUR
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IXTP50N25T IXTP50N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4E4FF92DFD820&compId=IXTA(H%2CP%2CQ)50N25T.pdf?ci_sign=7e809dd509feff8e274b784c3f608f03c09bb7c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 325 Stücke:
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12+6.25 EUR
17+4.29 EUR
18+4.06 EUR
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IXTP50N20PM IXTP50N20PM IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF907F47B5969E27&compId=IXTP50N20PM-DTE.pdf?ci_sign=3960f7e3d34464ae58cc23f154da7e0b579f8434 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: Polar™
Produkt ist nicht verfügbar
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CPC3720CTR CPC3720CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6FEB8A4E29820&compId=CPC3720.pdf?ci_sign=c1cbf9c1b8179c87f7fb0153f8c41f0f7763ed94 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 591 Stücke:
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103+0.7 EUR
182+0.39 EUR
199+0.36 EUR
258+0.28 EUR
274+0.26 EUR
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IXTX110N20L2 IXTX110N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9939600E0EFF298BF&compId=IXT_110N20L2.pdf?ci_sign=2efcd7c71b9a3d0ca4fa8423b4cac407d61b052b Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Technology: Linear L2™
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
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IXDD604D2TR IXDD604D2TR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 87 Stücke:
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32+2.26 EUR
44+1.64 EUR
49+1.49 EUR
51+1.42 EUR
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IXDF604PI IXDF604PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
auf Bestellung 502 Stücke:
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36+2.03 EUR
39+1.87 EUR
53+1.37 EUR
55+1.3 EUR
500+1.26 EUR
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IXDI604SIA IXDI604SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 1060 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.26 EUR
44+1.64 EUR
48+1.5 EUR
49+1.49 EUR
51+1.42 EUR
100+1.37 EUR
200+1.36 EUR
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IXFH12N120P IXFH12N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC077820&compId=IXFH12N120P.pdf?ci_sign=03e4ff54b9f94353d29ae1889cf223edf7d7b9d6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 543W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Power dissipation: 543W
Case: TO247-3
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 265 Stücke:
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4+19.68 EUR
5+14.97 EUR
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DSEP2X101-04A DSEP2X101-04A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA953BFBDF922143&compId=DSEP2X101-04A.pdf?ci_sign=594b348ef84af72be8b50caeb80a2a4f9bfe9466 Category: Diode modules
Description: Module: diode; double independent; 400V; If: 100Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.73V
Load current: 100A x2
Semiconductor structure: double independent
Max. forward impulse current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SOT227B
auf Bestellung 39 Stücke:
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2+46.89 EUR
10+46.68 EUR
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DSA30C100HB DSA30C100HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9490B716B38BF&compId=DSA30C100HB.pdf?ci_sign=672a3e09a2ff1196d72d97ec1d42b7f8c58f10a4 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO247-3; Ufmax: 0.72V
Mounting: THT
Case: TO247-3
Max. off-state voltage: 100V
Max. forward voltage: 0.72V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Type of diode: Schottky rectifying
auf Bestellung 51 Stücke:
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19+3.79 EUR
21+3.43 EUR
27+2.72 EUR
28+2.57 EUR
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CPC1114NTR CPC1114NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75FE0C7&compId=CPC1114N.pdf?ci_sign=36ecf46fb10f7b97fccf3227e429fc88dfec2307 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC3982TTR CPC3982TTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A6583C3D1118BF&compId=CPC3982.pdf?ci_sign=768e2d563e17ec093534afea6845d24c4cb589b3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.15A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±15V
On-state resistance: 380Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
auf Bestellung 2851 Stücke:
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103+0.7 EUR
118+0.61 EUR
207+0.35 EUR
219+0.33 EUR
1000+0.31 EUR
Mindestbestellmenge: 103
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CPC1908J CPC1908J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F1B80C7&compId=CPC1908.pdf?ci_sign=3dbafef0ca837333cdd10aeb40654e4bbb3038eb Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 3500mA; max.60VAC
Case: i4-pac
Manufacturer series: OptoMOS
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Insulation voltage: 2.5kV
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-off time: 5ms
Turn-on time: 20ms
Control current max.: 100mA
On-state resistance: 0.3Ω
Max. operating current: 3.5A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: THT
Produkt ist nicht verfügbar
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CPC3902ZTR CPC3902ZTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6DFA5F84F9820&compId=CPC3902.pdf?ci_sign=f60c68197a69999e05253e2148d7740093534ce7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 171 Stücke:
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54+1.33 EUR
81+0.89 EUR
152+0.47 EUR
161+0.44 EUR
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IXTH16N20D2 IXTH16N20D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D35574B86DF820&compId=IXTH(T)16N20D2.pdf?ci_sign=5ea239bb12406bc8372f9c07c4aea2c2ac1c0344 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 607ns
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 695W
Polarisation: unipolar
Kind of channel: depletion
Drain-source voltage: 200V
Drain current: 16A
Produkt ist nicht verfügbar
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IXTH16N50D2 IXTH16N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
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IXTH16P60P IXTH16P60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E619805AB38BF&compId=IXT_16P60P.pdf?ci_sign=0e81182102286b9c0016837af235ac11d15c7957 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Kind of channel: enhancement
Case: TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Mounting: THT
Drain-source voltage: -600V
Drain current: -16A
Reverse recovery time: 440ns
Gate charge: 92nC
On-state resistance: 720mΩ
Power dissipation: 460W
Gate-source voltage: ±20V
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXKH47N60C IXKH47N60C IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC739820&compId=IXKH47N60C.pdf?ci_sign=43bb435c43c10b1bc34c0027e601cdcadb46f0c7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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DSA120X200LB-TRR IXYS Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. forward voltage: 0.67V
Load current: 65A x2
Power dissipation: 185W
Max. off-state voltage: 200V
Max. forward impulse current: 700A
Semiconductor structure: double independent
Produkt ist nicht verfügbar
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IXTP3N50D2 IXTP3N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBCC5F1A4EB820&compId=IXTA(P)3N50D2.pdf?ci_sign=1433b6210e8ee4e73eac19dda6d08b4459ecca40 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 24ns
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.86 EUR
20+3.65 EUR
21+3.45 EUR
50+3.3 EUR
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IXDF602PI IXDF602PI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 93ns
Turn-on time: 93ns
auf Bestellung 53 Stücke:
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34+2.12 EUR
53+1.34 EUR
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IXDI602PI IXDI602PI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 93ns
Turn-on time: 93ns
auf Bestellung 977 Stücke:
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28+2.63 EUR
44+1.66 EUR
70+1.03 EUR
74+0.97 EUR
500+0.93 EUR
Mindestbestellmenge: 28
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DSEE30-12A DSEE30-12A IXYS DSEE30-12A.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Reverse recovery time: 30ns
Max. forward voltage: 2.5V
Load current: 30A
Power dissipation: 165W
auf Bestellung 12 Stücke:
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4+20.02 EUR
10+19.25 EUR
Mindestbestellmenge: 4
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IXGX100N170 IXGX100N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0A6DAFB799820&compId=IXGK(X)100N170.pdf?ci_sign=c8053da6d72a2c79586ce8a850d84b1d66a7da31 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 285ns
Turn-off time: 720ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXXH80N65B4 IXXH80N65B4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9E035A3E93820&compId=IXXH80N65B4.pdf?ci_sign=87dde9e4c61408c192916628afc8e7dc723e51a1 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Turn-off time: 222ns
Turn-on time: 125ns
Collector current: 80A
Pulsed collector current: 430A
Collector-emitter voltage: 650V
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)
8+10.18 EUR
12+6.03 EUR
120+5.96 EUR
Mindestbestellmenge: 8
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IXGN72N60C3H1 IXGN72N60C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2FA2829F3B820&compId=IXGN72N60C3H1.pdf?ci_sign=0baf9eb2a151751236ca0716618ffe401a388905 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Power dissipation: 360W
Case: SOT227B
Type of semiconductor module: IGBT
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 52A
Pulsed collector current: 360A
Electrical mounting: screw
Mechanical mounting: screw
Technology: GenX3™; PT
Produkt ist nicht verfügbar
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IXGX72N60C3H1 IXGX72N60C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB0E62FFAC9820&compId=IXGX72N60C3H1.pdf?ci_sign=cac8206ee321d338a1e80ece5d0032b45e4a91ee Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Power dissipation: 540W
Case: PLUS247™
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 72A
Pulsed collector current: 360A
Turn-on time: 62ns
Turn-off time: 244ns
Technology: GenX3™; PT
Produkt ist nicht verfügbar
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IXFH70N20Q3 IXFH70N20Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D43ABF543E3820&compId=IXFH(T)70N20Q3.pdf?ci_sign=be45f1d929df193dd38505d25feb4e73fd60918a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO247-3
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
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IXFH110N10P IXFH110N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC01F820&compId=IXFH110N10P.pdf?ci_sign=2692b409156b87ba36b15cc212f6c4d34cf32b38 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.37 EUR
12+6.18 EUR
13+5.83 EUR
120+5.72 EUR
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CPC1726Y CPC1726Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931BC75C80C7&compId=CPC1726.pdf?ci_sign=a53eb8bf498480b7b73e068027bb14401528e7ca Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; OptoMOS; 0.75Ω
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V DC
Relay variant: current source
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-off time: 2ms
Turn-on time: 5ms
On-state resistance: 0.75Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Kind of output: MOSFET
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.45 EUR
20+3.6 EUR
22+3.4 EUR
Mindestbestellmenge: 14
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IXTP01N100D IXTP01N100D IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389C7B8E6A07820&compId=IXTP(Y)01N100D.pdf?ci_sign=15922f911bd95ebe5bb5b025278134f6086945cf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Kind of package: tube
Gate charge: 0.1µC
Kind of channel: depletion
Mounting: THT
Case: TO220AB
Reverse recovery time: 2ns
Drain-source voltage: 1kV
Drain current: 0.1A
On-state resistance: 80Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.52 EUR
12+6.19 EUR
13+5.86 EUR
Mindestbestellmenge: 8
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CLA100E1200KB CLA100E1200KB IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3BE18465FA0D2&compId=CLA100E1200KB.pdf?ci_sign=8a6a9c1a38dc741ed9180f9f3b065cc6992c0b39 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 160A
Load current: 100A
Gate current: 80mA
Case: TO264
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.19kA
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.24 EUR
9+8.38 EUR
10+7.92 EUR
25+7.74 EUR
Mindestbestellmenge: 7
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IXFK150N30P3 IXFK150N30P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D336DC7D7F5820&compId=IXFK(X)150N30P3.pdf?ci_sign=e1cc3cf21ad8db90ded334fd7d3c224869e18e9c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
4+20.35 EUR
25+19.69 EUR
Mindestbestellmenge: 4
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IXTK180N15P IXTK180N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9188AFD9C59E27&compId=IXTK180N15P-DTE.pdf?ci_sign=2ad7003b8dcc314cadea14ef7581e19529865817 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Kind of package: tube
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.49 EUR
5+14.73 EUR
6+13.93 EUR
25+13.38 EUR
Mindestbestellmenge: 4
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VMO60-05F pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 60A; TO240AA; Idm: 240A; 590W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 60A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 240A
Power dissipation: 590W
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 405nC
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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CPC1967J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82480C7&compId=CPC1967.pdf?ci_sign=1a9a97aaffccad77bd5336d5a50b8c41367b0354
CPC1967J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
On-state resistance: 0.85Ω
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Kind of output: MOSFET
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
Max. operating current: 1350mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 100mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: i4-pac
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.9 EUR
25+18.32 EUR
Mindestbestellmenge: 4
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CPC1966YX6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82200C7&compId=CPC1966YX6.pdf?ci_sign=3627c14bdb96a92aa76e317f8bb40155f042cd56
CPC1966YX6
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: instantaneous switching
Insulation voltage: 3.75kV
Turn-on time: 500µs
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.78 EUR
11+6.66 EUR
12+6.29 EUR
25+6.06 EUR
Mindestbestellmenge: 10
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CPC1981Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B4C0C7&compId=CPC1981.pdf?ci_sign=49fda13fe6a6bae85cf657bec9b4905da8f5b07d
CPC1981Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 180mA
Switched voltage: max. 1kV AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 18Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 10ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.95 EUR
19+3.76 EUR
Mindestbestellmenge: 13
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CPC5603CTR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A67566F94DB8BF&compId=CPC5603.pdf?ci_sign=e714e258bc789b11f74bf228bdeffe81ffeed81b
CPC5603CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 415V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
96+0.75 EUR
121+0.59 EUR
128+0.56 EUR
Mindestbestellmenge: 76
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IXTR40P50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E8662C8B4F8BF&compId=IXTR40P50P.pdf?ci_sign=594ef2e0778e8bf21dc4bfcab613b60b66c1e530
IXTR40P50P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 312W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 477ns
Drain-source voltage: -500V
Drain current: -22A
On-state resistance: 0.26Ω
Gate charge: 205nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.02 EUR
6+13.23 EUR
Mindestbestellmenge: 4
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IXTH140P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA04D36549478BF&compId=IXT_140P10T.pdf?ci_sign=82e79b46bffa7ad38449867cfa0dd075c83d0c9f
IXTH140P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 568W
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 130ns
Drain-source voltage: -100V
Drain current: -140A
On-state resistance: 10mΩ
Gate charge: 400nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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IXTH140P05T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0BDE6F66F58BF&compId=IXT_140P05T.pdf?ci_sign=268333924a43654bc82c3125d67058d0e0a6216e
IXTH140P05T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 53ns
Drain-source voltage: -50V
Drain current: -140A
On-state resistance: 9mΩ
Gate charge: 200nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.63 EUR
9+8.31 EUR
30+8.27 EUR
Mindestbestellmenge: 7
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IXTP140P05T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0BDE6F66F58BF&compId=IXT_140P05T.pdf?ci_sign=268333924a43654bc82c3125d67058d0e0a6216e
IXTP140P05T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 53ns
Drain-source voltage: -50V
Drain current: -140A
On-state resistance: 9mΩ
Gate charge: 200nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 222 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.82 EUR
11+6.51 EUR
12+6.15 EUR
Mindestbestellmenge: 9
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IXTA140N12T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDE4D4C598B820&compId=IXTA(P)140N12T2.pdf?ci_sign=96847b55de5591e2d4cc16630b5a64962539e9ba
IXTA140N12T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO263
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 174nC
Kind of package: tube
Reverse recovery time: 65ns
Features of semiconductor devices: thrench gate power mosfet
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
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IXTH12N70X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91807820&compId=IXTH12N70X2.pdf?ci_sign=98c9b07086da1e62cdc3bf271cfc9a447d4cf5d4
IXTH12N70X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Power dissipation: 180W
Features of semiconductor devices: ultra junction x-class
Gate charge: 19nC
Produkt ist nicht verfügbar
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DSEI2X101-06A pVersion=0046&contRep=ZT&docId=E1C04A8FCC4F92F1A6F5005056AB5A8F&compId=DSEI2x101-06A.pdf?ci_sign=09b084b06228819067d2329633b0aef8070e24cb
DSEI2X101-06A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 96A x2
Case: SOT227B
Max. forward voltage: 1.25V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.99 EUR
Mindestbestellmenge: 2
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DSEI12-06A description pVersion=0046&contRep=ZT&docId=E269244771F7DAF1A303005056AB0C4F&compId=DSEI12-06A.pdf?ci_sign=1a0272622fb5d81809dede3e61b8d2bfcae11f38
DSEI12-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 14A; tube; Ifsm: 100A; TO220AC; 62W
Semiconductor structure: single diode
Case: TO220AC
Features of semiconductor devices: fast switching
Mounting: THT
Technology: FRED
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.5V
Max. forward impulse current: 100A
Power dissipation: 62W
Load current: 14A
Max. off-state voltage: 0.6kV
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.93 EUR
36+2 EUR
38+1.89 EUR
50+1.87 EUR
Mindestbestellmenge: 25
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DSA15IM200UC pVersion=0046&contRep=ZT&docId=005056AB82531EE991C8FD8A880F38BF&compId=DSA15IM200UC.pdf?ci_sign=056317a4f5de6751e61974d806a68417d45989a7
DSA15IM200UC
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
auf Bestellung 1744 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
47+1.54 EUR
59+1.23 EUR
62+1.16 EUR
500+1.14 EUR
Mindestbestellmenge: 36
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DPG20C300PN Littelfuse-Power-Semiconductors-DPG20C300PN-Datasheet?assetguid=81A91808-9E32-4874-B0CD-3B7F01F1EA7E
DPG20C300PN
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220FP
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Power dissipation: 35W
Max. forward voltage: 1.27V
Max. forward impulse current: 140A
Load current: 10A x2
Max. off-state voltage: 300V
auf Bestellung 557 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.23 EUR
36+2.02 EUR
41+1.77 EUR
45+1.6 EUR
48+1.52 EUR
250+1.49 EUR
Mindestbestellmenge: 33
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DPG20C300PB DPG20C300PB.pdf
DPG20C300PB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 65W
Max. forward voltage: 1.27V
Max. forward impulse current: 140A
Load current: 10A x2
Max. off-state voltage: 300V
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.76 EUR
29+2.53 EUR
36+2 EUR
38+1.9 EUR
Mindestbestellmenge: 26
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IXDN602PI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDN602PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Number of channels: 2
Output current: -2...2A
Supply voltage: 4.5...35V
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 93ns
Turn-off time: 93ns
Kind of package: tube
Case: DIP8
Type of integrated circuit: driver
Mounting: THT
Kind of integrated circuit: gate driver; low-side
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
61+1.17 EUR
68+1.06 EUR
72+1 EUR
100+0.97 EUR
Mindestbestellmenge: 45
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IXDN602SIA pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDN602SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Number of channels: 2
Output current: -2...2A
Supply voltage: 4.5...35V
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 93ns
Turn-off time: 93ns
Kind of package: tube
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
auf Bestellung 614 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
65+1.12 EUR
70+1.03 EUR
74+0.97 EUR
100+0.96 EUR
300+0.94 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
CPC1965G pVersion=0046&contRep=ZT&docId=005056AB82531EE995A44BA23226F8BF&compId=CPC1965G.pdf?ci_sign=3a2396cdfa67a4109f17be1dd9e9ffa31f3979f0
CPC1965G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x7.62x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.39 EUR
18+4.05 EUR
19+3.82 EUR
Mindestbestellmenge: 12
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MEK300-06DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MEK300-06DA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Electrical mounting: screw
Type of semiconductor module: diode
Case: Y4-M6
Mechanical mounting: screw
Max. forward voltage: 1.19V
Load current: 304A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 2.4kA
Semiconductor structure: common cathode
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+83.66 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CPC2330N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891AC0C7&compId=CPC2330N.pdf?ci_sign=029ea682cdcd4f7973c59961ae0fa6d8e53884ee
CPC2330N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Case: SO8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
auf Bestellung 484 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.59 EUR
32+2.25 EUR
34+2.13 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXTP450P2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55001B8D0D820&compId=IXTH(P%2CQ)450P2.pdf?ci_sign=bd2a070be623e6483ee1ebfc57c7e655c7dd0ea6
IXTP450P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Reverse recovery time: 400ns
Power dissipation: 300W
On-state resistance: 0.33Ω
Drain current: 16A
Drain-source voltage: 500V
Polarisation: unipolar
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.86 EUR
23+3.17 EUR
24+3 EUR
100+2.89 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
MCD162-18io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01F68DDF93E27&compId=MCD162-18IO1-DTE.pdf?ci_sign=455e3bcba99267b8d353287e50d54a847388ebe6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCD162-18io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. forward voltage: 1.03V
Load current: 181A
Max. load current: 300A
Max. forward impulse current: 6kA
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+79.26 EUR
6+76.71 EUR
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PD2401 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98480C7&compId=PD2401.pdf?ci_sign=a60ef1f1aa10789c66a0d571757966686af45183
PD2401
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Mounting: THT
Case: DIP4
Switching method: zero voltage switching
Type of relay: solid state
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.22 EUR
11+6.51 EUR
12+6.16 EUR
Mindestbestellmenge: 10
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IXTP50N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34
IXTP50N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.89 EUR
22+3.4 EUR
23+3.22 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ50N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34
IXTQ50N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.29 EUR
19+3.95 EUR
20+3.73 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IXTP50N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4E4FF92DFD820&compId=IXTA(H%2CP%2CQ)50N25T.pdf?ci_sign=7e809dd509feff8e274b784c3f608f03c09bb7c0
IXTP50N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 325 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.25 EUR
17+4.29 EUR
18+4.06 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IXTP50N20PM pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF907F47B5969E27&compId=IXTP50N20PM-DTE.pdf?ci_sign=3960f7e3d34464ae58cc23f154da7e0b579f8434
IXTP50N20PM
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC3720CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6FEB8A4E29820&compId=CPC3720.pdf?ci_sign=c1cbf9c1b8179c87f7fb0153f8c41f0f7763ed94
CPC3720CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 591 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
182+0.39 EUR
199+0.36 EUR
258+0.28 EUR
274+0.26 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
IXTX110N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE9939600E0EFF298BF&compId=IXT_110N20L2.pdf?ci_sign=2efcd7c71b9a3d0ca4fa8423b4cac407d61b052b
IXTX110N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Technology: Linear L2™
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDD604D2TR pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDD604D2TR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.26 EUR
44+1.64 EUR
49+1.49 EUR
51+1.42 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IXDF604PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDF604PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
auf Bestellung 502 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
39+1.87 EUR
53+1.37 EUR
55+1.3 EUR
500+1.26 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IXDI604SIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDI604SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 1060 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.26 EUR
44+1.64 EUR
48+1.5 EUR
49+1.49 EUR
51+1.42 EUR
100+1.37 EUR
200+1.36 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IXFH12N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC077820&compId=IXFH12N120P.pdf?ci_sign=03e4ff54b9f94353d29ae1889cf223edf7d7b9d6
IXFH12N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 543W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Power dissipation: 543W
Case: TO247-3
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.68 EUR
5+14.97 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DSEP2X101-04A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA953BFBDF922143&compId=DSEP2X101-04A.pdf?ci_sign=594b348ef84af72be8b50caeb80a2a4f9bfe9466
DSEP2X101-04A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 100Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.73V
Load current: 100A x2
Semiconductor structure: double independent
Max. forward impulse current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SOT227B
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+46.89 EUR
10+46.68 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DSA30C100HB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9490B716B38BF&compId=DSA30C100HB.pdf?ci_sign=672a3e09a2ff1196d72d97ec1d42b7f8c58f10a4
DSA30C100HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO247-3; Ufmax: 0.72V
Mounting: THT
Case: TO247-3
Max. off-state voltage: 100V
Max. forward voltage: 0.72V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Type of diode: Schottky rectifying
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.79 EUR
21+3.43 EUR
27+2.72 EUR
28+2.57 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
CPC1114NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75FE0C7&compId=CPC1114N.pdf?ci_sign=36ecf46fb10f7b97fccf3227e429fc88dfec2307
CPC1114NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC3982TTR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A6583C3D1118BF&compId=CPC3982.pdf?ci_sign=768e2d563e17ec093534afea6845d24c4cb589b3
CPC3982TTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.15A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±15V
On-state resistance: 380Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
auf Bestellung 2851 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
118+0.61 EUR
207+0.35 EUR
219+0.33 EUR
1000+0.31 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
CPC1908J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F1B80C7&compId=CPC1908.pdf?ci_sign=3dbafef0ca837333cdd10aeb40654e4bbb3038eb
CPC1908J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 3500mA; max.60VAC
Case: i4-pac
Manufacturer series: OptoMOS
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Insulation voltage: 2.5kV
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-off time: 5ms
Turn-on time: 20ms
Control current max.: 100mA
On-state resistance: 0.3Ω
Max. operating current: 3.5A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: THT
Produkt ist nicht verfügbar
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CPC3902ZTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6DFA5F84F9820&compId=CPC3902.pdf?ci_sign=f60c68197a69999e05253e2148d7740093534ce7
CPC3902ZTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
81+0.89 EUR
152+0.47 EUR
161+0.44 EUR
Mindestbestellmenge: 54
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IXTH16N20D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D35574B86DF820&compId=IXTH(T)16N20D2.pdf?ci_sign=5ea239bb12406bc8372f9c07c4aea2c2ac1c0344
IXTH16N20D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 607ns
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 695W
Polarisation: unipolar
Kind of channel: depletion
Drain-source voltage: 200V
Drain current: 16A
Produkt ist nicht verfügbar
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IXTH16N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005
IXTH16N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
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IXTH16P60P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E619805AB38BF&compId=IXT_16P60P.pdf?ci_sign=0e81182102286b9c0016837af235ac11d15c7957
IXTH16P60P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Kind of channel: enhancement
Case: TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Mounting: THT
Drain-source voltage: -600V
Drain current: -16A
Reverse recovery time: 440ns
Gate charge: 92nC
On-state resistance: 720mΩ
Power dissipation: 460W
Gate-source voltage: ±20V
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXKH47N60C pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC739820&compId=IXKH47N60C.pdf?ci_sign=43bb435c43c10b1bc34c0027e601cdcadb46f0c7
IXKH47N60C
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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DSA120X200LB-TRR
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. forward voltage: 0.67V
Load current: 65A x2
Power dissipation: 185W
Max. off-state voltage: 200V
Max. forward impulse current: 700A
Semiconductor structure: double independent
Produkt ist nicht verfügbar
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IXTP3N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBCC5F1A4EB820&compId=IXTA(P)3N50D2.pdf?ci_sign=1433b6210e8ee4e73eac19dda6d08b4459ecca40
IXTP3N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 24ns
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.86 EUR
20+3.65 EUR
21+3.45 EUR
50+3.3 EUR
Mindestbestellmenge: 15
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IXDF602PI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDF602PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 93ns
Turn-on time: 93ns
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.12 EUR
53+1.34 EUR
Mindestbestellmenge: 34
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IXDI602PI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDI602PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 93ns
Turn-on time: 93ns
auf Bestellung 977 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.63 EUR
44+1.66 EUR
70+1.03 EUR
74+0.97 EUR
500+0.93 EUR
Mindestbestellmenge: 28
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DSEE30-12A DSEE30-12A.PDF
DSEE30-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Reverse recovery time: 30ns
Max. forward voltage: 2.5V
Load current: 30A
Power dissipation: 165W
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.02 EUR
10+19.25 EUR
Mindestbestellmenge: 4
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IXGX100N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0A6DAFB799820&compId=IXGK(X)100N170.pdf?ci_sign=c8053da6d72a2c79586ce8a850d84b1d66a7da31
IXGX100N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 285ns
Turn-off time: 720ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXXH80N65B4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9E035A3E93820&compId=IXXH80N65B4.pdf?ci_sign=87dde9e4c61408c192916628afc8e7dc723e51a1
IXXH80N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Turn-off time: 222ns
Turn-on time: 125ns
Collector current: 80A
Pulsed collector current: 430A
Collector-emitter voltage: 650V
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.18 EUR
12+6.03 EUR
120+5.96 EUR
Mindestbestellmenge: 8
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IXGN72N60C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2FA2829F3B820&compId=IXGN72N60C3H1.pdf?ci_sign=0baf9eb2a151751236ca0716618ffe401a388905
IXGN72N60C3H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Power dissipation: 360W
Case: SOT227B
Type of semiconductor module: IGBT
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 52A
Pulsed collector current: 360A
Electrical mounting: screw
Mechanical mounting: screw
Technology: GenX3™; PT
Produkt ist nicht verfügbar
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IXGX72N60C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB0E62FFAC9820&compId=IXGX72N60C3H1.pdf?ci_sign=cac8206ee321d338a1e80ece5d0032b45e4a91ee
IXGX72N60C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Power dissipation: 540W
Case: PLUS247™
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 72A
Pulsed collector current: 360A
Turn-on time: 62ns
Turn-off time: 244ns
Technology: GenX3™; PT
Produkt ist nicht verfügbar
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IXFH70N20Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D43ABF543E3820&compId=IXFH(T)70N20Q3.pdf?ci_sign=be45f1d929df193dd38505d25feb4e73fd60918a
IXFH70N20Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO247-3
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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IXFH110N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC01F820&compId=IXFH110N10P.pdf?ci_sign=2692b409156b87ba36b15cc212f6c4d34cf32b38
IXFH110N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.37 EUR
12+6.18 EUR
13+5.83 EUR
120+5.72 EUR
Mindestbestellmenge: 8
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CPC1726Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931BC75C80C7&compId=CPC1726.pdf?ci_sign=a53eb8bf498480b7b73e068027bb14401528e7ca
CPC1726Y
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; OptoMOS; 0.75Ω
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V DC
Relay variant: current source
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-off time: 2ms
Turn-on time: 5ms
On-state resistance: 0.75Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Kind of output: MOSFET
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.45 EUR
20+3.6 EUR
22+3.4 EUR
Mindestbestellmenge: 14
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IXTP01N100D pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389C7B8E6A07820&compId=IXTP(Y)01N100D.pdf?ci_sign=15922f911bd95ebe5bb5b025278134f6086945cf
IXTP01N100D
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Kind of package: tube
Gate charge: 0.1µC
Kind of channel: depletion
Mounting: THT
Case: TO220AB
Reverse recovery time: 2ns
Drain-source voltage: 1kV
Drain current: 0.1A
On-state resistance: 80Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.52 EUR
12+6.19 EUR
13+5.86 EUR
Mindestbestellmenge: 8
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CLA100E1200KB pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3BE18465FA0D2&compId=CLA100E1200KB.pdf?ci_sign=8a6a9c1a38dc741ed9180f9f3b065cc6992c0b39
CLA100E1200KB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 160A
Load current: 100A
Gate current: 80mA
Case: TO264
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.19kA
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.24 EUR
9+8.38 EUR
10+7.92 EUR
25+7.74 EUR
Mindestbestellmenge: 7
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IXFK150N30P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D336DC7D7F5820&compId=IXFK(X)150N30P3.pdf?ci_sign=e1cc3cf21ad8db90ded334fd7d3c224869e18e9c
IXFK150N30P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.35 EUR
25+19.69 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXTK180N15P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9188AFD9C59E27&compId=IXTK180N15P-DTE.pdf?ci_sign=2ad7003b8dcc314cadea14ef7581e19529865817
IXTK180N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Kind of package: tube
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.49 EUR
5+14.73 EUR
6+13.93 EUR
25+13.38 EUR
Mindestbestellmenge: 4
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