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IXFX300N20X3 IXFX300N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB1B71634818BF&compId=IXF_300N20X3.pdf?ci_sign=d7ceaf98ba04f28d6cca73c11a6a109100fa462b pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
auf Bestellung 21 Stücke:
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3+32.39 EUR
10+31.32 EUR
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IXTH11P50 IXTH11P50 IXYS pVersion=0046&contRep=ZT&docId=E29204E7FB2FFDF19A99005056AB752F&compId=DS94535L(IXTH-T11P50).pdf?ci_sign=75e2ecd6057bd9959b8b067840c0bc20763188af Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Gate charge: 145nC
Reverse recovery time: 0.5µs
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 300W
auf Bestellung 295 Stücke:
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6+14.17 EUR
7+10.45 EUR
30+10.44 EUR
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MCD312-16io1 MCD312-16io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4DA694FFC2469&compId=MCC312-12IO1.pdf?ci_sign=3f968db46db8a1b8ba38583aacd1605eca7d74da Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
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IXFT24N80P IXFT24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
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IXFP7N100P IXFP7N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEC13C244BC98BF&compId=IXF_7N100P.pdf?ci_sign=098a71bb06e557089a0d1511de1a94a0bc177181 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Kind of package: tube
auf Bestellung 208 Stücke:
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15+5.02 EUR
16+4.73 EUR
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IXTY08N100D2 IXTY08N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D5010345B820&compId=IXTA(P%2CY)08N100D2.pdf?ci_sign=ff8d8aff111d8414478644545169c45d10c4ed47 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depletion
auf Bestellung 210 Stücke:
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16+4.75 EUR
20+3.68 EUR
24+3.09 EUR
25+2.92 EUR
26+2.8 EUR
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IXTP100N04T2 IXTP100N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E1F1BA8D9820&compId=IXTA(P)100N04T2.pdf?ci_sign=6a88636d3dd1a68af7406b8bccbef80c68bda003 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 34ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 267 Stücke:
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22+3.26 EUR
41+1.76 EUR
44+1.66 EUR
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NCD2400MTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB1E7FD5DAAB860C7&compId=NCD2400M.pdf?ci_sign=302289e6c19ab2fb5c5049a324b7c154f34eb477 Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Type of integrated circuit: digital capacitor
Interface: 2-wire; I2C
Kind of memory: EEPROM; non-volatile
Case: DFN6
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.5...5.5V
Application: for OCXO application
Capacitance: 1.7...203pF
Number of positions: 512
Integrated circuit features: programmable
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IXFP34N65X2M IXFP34N65X2M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB3B358E7598BF&compId=IXFP34N65X2M.pdf?ci_sign=ba6c4f16a8dbfc265936acb942200ef0c47e0425 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Technology: HiPerFET™; X2-Class
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IXTY2N65X2 IXTY2N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89C4F8CE3158BF&compId=IXTP(Y)2N65X2.pdf?ci_sign=a1b44b73e461987c86a1219b0eef051f39a61060 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
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IXFH26N60P IXFH26N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED783F9DF33DFBB2259&compId=IXFH26N60P.pdf?ci_sign=9bba2217361a08c9c0640ecbde1a01f412fcd492 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 259 Stücke:
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7+11 EUR
9+8.12 EUR
10+7.64 EUR
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IXDD609SIA IXDD609SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Kind of package: tube
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Operating temperature: -40...125°C
Output current: -9...9A
Turn-off time: 105ns
Turn-on time: 115ns
Number of channels: 1
Supply voltage: 4.5...35V
Case: SO8
auf Bestellung 112 Stücke:
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37+1.97 EUR
50+1.44 EUR
54+1.34 EUR
55+1.32 EUR
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IXDD609SIATR IXDD609SIATR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDN614YI IXDN614YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -14...14A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 168 Stücke:
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10+7.84 EUR
16+4.48 EUR
50+4.29 EUR
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IXDD604SIA IXDD604SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 734 Stücke:
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37+1.96 EUR
43+1.69 EUR
50+1.43 EUR
53+1.36 EUR
55+1.3 EUR
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CPC1117NTR CPC1117NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20A20C7&compId=CPC1117N.pdf?ci_sign=18d490086b78a6320fb704976e77bbb11aadfa34 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXDD604SIATR IXDD604SIATR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXFK64N60P3 IXFK64N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB0ABA0A0DD8BF&compId=IXF_64N60P3.pdf?ci_sign=a8ce04ebb208e064f869f0d2ea995cec98534685 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
auf Bestellung 291 Stücke:
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4+18.6 EUR
6+13.38 EUR
25+13.13 EUR
100+12.87 EUR
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MIXG300PF1700TSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 315A
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
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DPG120C300QB DPG120C300QB IXYS Littelfuse-Power-Semiconductors-DPG120C300QB-Datasheet?assetguid=A5371395-F911-4F4E-8C71-3DC160C40938 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 60Ax2; tube; Ifsm: 450A; TO3P; 275W
Case: TO3P
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.4V
Load current: 60A x2
Power dissipation: 275W
Max. off-state voltage: 300V
Max. forward impulse current: 0.45kA
auf Bestellung 19 Stücke:
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7+11.38 EUR
8+9.12 EUR
9+8.62 EUR
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IXTQ64N25P IXTQ64N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CE00FFAAFE27&compId=IXTQ64N25P-DTE.pdf?ci_sign=8629d9d38dc4d997f8392b5cabb1618306ba9fab Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO3P
Mounting: THT
Power dissipation: 400W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: PolarHT™
Case: TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 200ns
On-state resistance: 49mΩ
Drain current: 64A
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IXKK85N60C IXKK85N60C IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC765820&compId=IXKK85N60C.pdf?ci_sign=45f48f1ec514485461df7d7e3f166714c6045391 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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IXTA120P065T IXTA120P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Technology: TrenchP™
auf Bestellung 277 Stücke:
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10+7.41 EUR
14+5.15 EUR
15+4.88 EUR
50+4.8 EUR
100+4.69 EUR
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IXTA120N075T2 IXTA120N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA3439A5B43820&compId=IXTA(P)120N075T2.pdf?ci_sign=a989206584ccedc296376c463764890b543910ce Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO263
Mounting: SMD
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Gate charge: 78nC
Reverse recovery time: 50ns
On-state resistance: 7.7mΩ
Power dissipation: 250W
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DMA150E1600NA DMA150E1600NA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA59E3F493F0F00D6&compId=DMA150E1600NA.pdf?ci_sign=61a9de61d149c9bbbbdac5a942f6e82898210d29 Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 150A; SOT227B; Ufmax: 1.05V
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.05V
Max. forward impulse current: 3kA
Max. off-state voltage: 1.6kV
Load current: 150A
Semiconductor structure: single diode
Type of semiconductor module: diode
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2+38.21 EUR
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IXFK44N50P IXFK44N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0758E5260469&compId=IXFK44N50P.pdf?ci_sign=d640f1f4194f9dc2e366fdcc55cc57269a9c0090 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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VHF25-08IO7 VHF25-08IO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1944179591820&compId=VHF25-ser.pdf?ci_sign=b45349266645b088e679b0569fcbdcd6528c9f31 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 32A
Max. forward impulse current: 180A
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Features of semiconductor devices: freewheelling diode
Gate current: 25/50mA
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MDA72-16N1B MDA72-16N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Diode modules
Description: Module: diode; double,common anode; 1.6kV; If: 113Ax2; TO240AA
Case: TO240AA
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.6V
Max. off-state voltage: 1.6kV
Max. forward impulse current: 1.54kA
Load current: 113A x2
Semiconductor structure: common anode; double
auf Bestellung 26 Stücke:
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IXBH20N300 IXBH20N300 IXYS littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 64ns
Gate charge: 105nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Power dissipation: 250W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
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DPF240X400NA DPF240X400NA IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA92966DC56E4A20C4&compId=DPF240X400NA.pdf?ci_sign=6fc4d0c4dfe81c07d0f6501815c460a2ef5b3645 Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 1.06V
Load current: 120A x2
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.2kA
auf Bestellung 43 Stücke:
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2+49.82 EUR
3+49.09 EUR
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IXFP6N120P IXFP6N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D454445020B820&compId=IXFA(H%2CP)6N120P.pdf?ci_sign=943297d656831e25efec803b2ad2b28ea7b42a34 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 250W
Case: TO220AB
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
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25+7.35 EUR
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CMA80MT1600NHR CMA80MT1600NHR IXYS media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet Category: Triacs
Description: Triac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: ISO247™
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
auf Bestellung 45 Stücke:
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6+12.03 EUR
9+8.32 EUR
30+7.99 EUR
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IXTA200N055T2 IXTA200N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD8F02C5009820&compId=IXTA(P)200N055T2.pdf?ci_sign=b09970100e7885edd8a9745146ea46cc0cf0637b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263
Polarisation: unipolar
Reverse recovery time: 49ns
Gate charge: 109nC
On-state resistance: 4.2mΩ
Drain-source voltage: 55V
Drain current: 200A
Power dissipation: 360W
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFH28N60P3 IXFH28N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285A2A90AE15820&compId=IXFH(Q)28N60P3.pdf?ci_sign=0f34ebb36ef205574a8cc03b1e646bbbf9a5d93c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Case: TO247-3
Gate charge: 50nC
On-state resistance: 0.26Ω
Drain current: 28A
Drain-source voltage: 600V
Power dissipation: 695W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
auf Bestellung 563 Stücke:
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9+8.69 EUR
11+6.51 EUR
12+6.15 EUR
30+5.91 EUR
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IXTH3N150 IXTH3N150 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494D3820&compId=IXTH3N150.pdf?ci_sign=9f26c436d8a2db1056604f21919c428f65c6491b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 38.6nC
Reverse recovery time: 900ns
Drain current: 3A
Power dissipation: 250W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MCC132-14io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED783F9BB4B38B42259&compId=MCC132-14io1.pdf?ci_sign=36cce519676ef7befdb41694a085cfd5acae9487 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.04kA
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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CPC1014NTR CPC1014NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A752E0C7&compId=CPC1014N.pdf?ci_sign=a4c02ddb082d95fd63da7394eecc1088ee03122f Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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MCC132-16io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D5FD28D50DE27&compId=MCC132-16IO1-DTE.pdf?ci_sign=ede7be546f4de8829bef360b7a919176f9b7d2d7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.14V
Load current: 130A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-08io1 MCC132-08io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 0.8kV
Kind of package: bulk
Semiconductor structure: double series
auf Bestellung 5 Stücke:
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2+62.03 EUR
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MCC132-12io1 IXYS pVersion=0046&contRep=ZT&docId=E2920706D3E035F19A99005056AB752F&compId=L079.pdf?ci_sign=670f371d8f9338259ca653a886128336d5194817 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 5.08kA
Kind of package: bulk
Semiconductor structure: double series
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1+73.47 EUR
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MCC132-18IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-14IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86EB5FF3B4F0C0C4&compId=MCC132-14io1B.pdf?ci_sign=075be34417d6ea2469487752d23265a7171d8ffc pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.4kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-16IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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DSA60C45HB DSA60C45HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9AAE31081D8BF&compId=DSA60C45HB.pdf?ci_sign=c0020e9ae6ab7c51a260e30c95c39c59b755ac0d Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
Power dissipation: 160W
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.85 EUR
17+4.36 EUR
21+3.47 EUR
22+3.29 EUR
120+3.23 EUR
Mindestbestellmenge: 15
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DSA60C60PB DSA60C60PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9B77B89AF38BF&compId=DSA60C60PB.pdf?ci_sign=973506983f66217d2a25bc2d0322d9632fed9b1d Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
Power dissipation: 175W
Produkt ist nicht verfügbar
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IXFK210N30X3 IXFK210N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB2D57B02A78BF&compId=IXF_210N30X3.pdf?ci_sign=b936bb2c259b202c476c66a13724d25b3b29cb21 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 210A
Drain-source voltage: 300V
Reverse recovery time: 190ns
Gate charge: 375nC
On-state resistance: 5.5mΩ
Gate-source voltage: ±20V
Power dissipation: 1.25kW
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
auf Bestellung 1 Stücke:
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CMA80MT1600NHB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA78234DDB91E00C4&compId=CMA80MT1600NHB.pdf?ci_sign=d55165b06458e6d8f4d3090ec4ae7776c173744c Category: Triacs
Description: Triac; 1.6kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: TO247-3
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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CMA60MT1600NHB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA7822AE67CA100C4&compId=CMA60MT1600NHB.pdf?ci_sign=c7185daf19a3ef746f2ca09df41abf01f190c007 Category: Triacs
Description: Triac; 1.6kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: TO247-3
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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CMA60MT1600NHR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFB01983335E0C4&compId=CMA60MT1600NHR.pdf?ci_sign=bea444f984a1305865b5b5358c10e1731808fe4e Category: Triacs
Description: Triac; 1.6kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: ISO247™
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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IXFB82N60P IXFB82N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED483D4DA614A18&compId=IXFB82N60P.pdf?ci_sign=dd1a9bcc358e003653cce67b74f6b719913560a2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
auf Bestellung 100 Stücke:
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3+29.03 EUR
5+29.01 EUR
25+28.53 EUR
Mindestbestellmenge: 3
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DSEC240-04A DSEC240-04A IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8EE4C0897461E0D3&compId=DSEC240-04A.pdf?ci_sign=fa2bfa7fb181c32a0e1f65011cdbef81fa691611 description Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 120Ax2; SOT227UI; Ufmax: 1V
Semiconductor structure: common cathode
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227UI
Max. forward voltage: 1V
Max. off-state voltage: 0.4kV
Load current: 120A x2
Max. forward impulse current: 2kA
Produkt ist nicht verfügbar
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IXFT120N30X3HV IXFT120N30X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBD406B0DCD8BF&compId=IXF_120N30X3_HV.pdf?ci_sign=44c2594b70f8a430a588605e95888b402a9a745c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Technology: HiPerFET™; X3-Class
auf Bestellung 12 Stücke:
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4+19.98 EUR
5+15.69 EUR
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MDD26-12N1B MDD26-12N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7DFA740E87FDE28&compId=MDD26-12N1B-DTE.pdf?ci_sign=294202a7f37e66c7e53bb6d1714460469e1f9ac7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 60A
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
3+24.75 EUR
4+23.39 EUR
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IXFH36N60P IXFH36N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC1E5B4133F820&compId=IXFH(K%2CT)36N60P.pdf?ci_sign=f303cae51d0f22faf44d1bff5e4ef775e61b58ec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)
8+10.05 EUR
10+9.67 EUR
Mindestbestellmenge: 8
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IXBH6N170 IXBH6N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1B474D794F8BF&compId=IXBH6N170_IXBT6N170.pdf?ci_sign=11ff0739ef8a82a3156ed9b2978a4d7167a1a158 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate charge: 17nC
Turn-on time: 104ns
Turn-off time: 700ns
Collector current: 6A
Gate-emitter voltage: ±20V
Pulsed collector current: 36A
Power dissipation: 75W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
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IXTH260N055T2 IXTH260N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B9183B820&compId=IXTH260N055T2.pdf?ci_sign=37da9bdeca5f2967218f2665567ee32f4d9d1a34 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 60ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTH360N055T2 IXTH360N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF1C858E7B820&compId=IXTH(T)360N055T2.pdf?ci_sign=23fb805fbce6e75a57fc84bdd4dfce3194e210b5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 78ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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LDA110STR LDA110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB58A04A7C1EC&compId=LDA110.pdf?ci_sign=368e2f280db3432d5a1624678db96d81054a5ca6 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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CPC1016NTR CPC1016NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75420C7&compId=CPC1016N.pdf?ci_sign=476036b92a73b73fde3c51ebae6dcbccaa47872a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXFX300N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB1B71634818BF&compId=IXF_300N20X3.pdf?ci_sign=d7ceaf98ba04f28d6cca73c11a6a109100fa462b pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFX300N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.39 EUR
10+31.32 EUR
Mindestbestellmenge: 3
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IXTH11P50 pVersion=0046&contRep=ZT&docId=E29204E7FB2FFDF19A99005056AB752F&compId=DS94535L(IXTH-T11P50).pdf?ci_sign=75e2ecd6057bd9959b8b067840c0bc20763188af
IXTH11P50
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Gate charge: 145nC
Reverse recovery time: 0.5µs
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 300W
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.17 EUR
7+10.45 EUR
30+10.44 EUR
Mindestbestellmenge: 6
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MCD312-16io1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4DA694FFC2469&compId=MCC312-12IO1.pdf?ci_sign=3f968db46db8a1b8ba38583aacd1605eca7d74da
MCD312-16io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Produkt ist nicht verfügbar
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IXFT24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91
IXFT24N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFP7N100P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEC13C244BC98BF&compId=IXF_7N100P.pdf?ci_sign=098a71bb06e557089a0d1511de1a94a0bc177181
IXFP7N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Kind of package: tube
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.02 EUR
16+4.73 EUR
Mindestbestellmenge: 15
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IXTY08N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D5010345B820&compId=IXTA(P%2CY)08N100D2.pdf?ci_sign=ff8d8aff111d8414478644545169c45d10c4ed47
IXTY08N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depletion
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.75 EUR
20+3.68 EUR
24+3.09 EUR
25+2.92 EUR
26+2.8 EUR
Mindestbestellmenge: 16
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IXTP100N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E1F1BA8D9820&compId=IXTA(P)100N04T2.pdf?ci_sign=6a88636d3dd1a68af7406b8bccbef80c68bda003
IXTP100N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 34ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.26 EUR
41+1.76 EUR
44+1.66 EUR
Mindestbestellmenge: 22
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NCD2400MTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB1E7FD5DAAB860C7&compId=NCD2400M.pdf?ci_sign=302289e6c19ab2fb5c5049a324b7c154f34eb477
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Type of integrated circuit: digital capacitor
Interface: 2-wire; I2C
Kind of memory: EEPROM; non-volatile
Case: DFN6
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.5...5.5V
Application: for OCXO application
Capacitance: 1.7...203pF
Number of positions: 512
Integrated circuit features: programmable
Produkt ist nicht verfügbar
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IXFP34N65X2M pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB3B358E7598BF&compId=IXFP34N65X2M.pdf?ci_sign=ba6c4f16a8dbfc265936acb942200ef0c47e0425
IXFP34N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Technology: HiPerFET™; X2-Class
Produkt ist nicht verfügbar
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IXTY2N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89C4F8CE3158BF&compId=IXTP(Y)2N65X2.pdf?ci_sign=a1b44b73e461987c86a1219b0eef051f39a61060
IXTY2N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
Produkt ist nicht verfügbar
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IXFH26N60P pVersion=0046&contRep=ZT&docId=005056AB752F1ED783F9DF33DFBB2259&compId=IXFH26N60P.pdf?ci_sign=9bba2217361a08c9c0640ecbde1a01f412fcd492
IXFH26N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11 EUR
9+8.12 EUR
10+7.64 EUR
Mindestbestellmenge: 7
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IXDD609SIA pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDD609SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Kind of package: tube
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Operating temperature: -40...125°C
Output current: -9...9A
Turn-off time: 105ns
Turn-on time: 115ns
Number of channels: 1
Supply voltage: 4.5...35V
Case: SO8
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.97 EUR
50+1.44 EUR
54+1.34 EUR
55+1.32 EUR
Mindestbestellmenge: 37
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IXDD609SIATR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
IXDD609SIATR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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IXDN614YI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDN614YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -14...14A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 168 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.84 EUR
16+4.48 EUR
50+4.29 EUR
Mindestbestellmenge: 10
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IXDD604SIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDD604SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 734 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.96 EUR
43+1.69 EUR
50+1.43 EUR
53+1.36 EUR
55+1.3 EUR
Mindestbestellmenge: 37
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CPC1117NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20A20C7&compId=CPC1117N.pdf?ci_sign=18d490086b78a6320fb704976e77bbb11aadfa34
CPC1117NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXDD604SIATR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
IXDD604SIATR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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IXFK64N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB0ABA0A0DD8BF&compId=IXF_64N60P3.pdf?ci_sign=a8ce04ebb208e064f869f0d2ea995cec98534685
IXFK64N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.6 EUR
6+13.38 EUR
25+13.13 EUR
100+12.87 EUR
Mindestbestellmenge: 4
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MIXG300PF1700TSF
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 315A
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DPG120C300QB Littelfuse-Power-Semiconductors-DPG120C300QB-Datasheet?assetguid=A5371395-F911-4F4E-8C71-3DC160C40938
DPG120C300QB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 60Ax2; tube; Ifsm: 450A; TO3P; 275W
Case: TO3P
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.4V
Load current: 60A x2
Power dissipation: 275W
Max. off-state voltage: 300V
Max. forward impulse current: 0.45kA
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.38 EUR
8+9.12 EUR
9+8.62 EUR
Mindestbestellmenge: 7
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IXTQ64N25P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CE00FFAAFE27&compId=IXTQ64N25P-DTE.pdf?ci_sign=8629d9d38dc4d997f8392b5cabb1618306ba9fab
IXTQ64N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO3P
Mounting: THT
Power dissipation: 400W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: PolarHT™
Case: TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 200ns
On-state resistance: 49mΩ
Drain current: 64A
Produkt ist nicht verfügbar
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IXKK85N60C pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC765820&compId=IXKK85N60C.pdf?ci_sign=45f48f1ec514485461df7d7e3f166714c6045391
IXKK85N60C
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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IXTA120P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7
IXTA120P065T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Technology: TrenchP™
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.41 EUR
14+5.15 EUR
15+4.88 EUR
50+4.8 EUR
100+4.69 EUR
Mindestbestellmenge: 10
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IXTA120N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA3439A5B43820&compId=IXTA(P)120N075T2.pdf?ci_sign=a989206584ccedc296376c463764890b543910ce
IXTA120N075T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO263
Mounting: SMD
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Gate charge: 78nC
Reverse recovery time: 50ns
On-state resistance: 7.7mΩ
Power dissipation: 250W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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DMA150E1600NA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA59E3F493F0F00D6&compId=DMA150E1600NA.pdf?ci_sign=61a9de61d149c9bbbbdac5a942f6e82898210d29
DMA150E1600NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 150A; SOT227B; Ufmax: 1.05V
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.05V
Max. forward impulse current: 3kA
Max. off-state voltage: 1.6kV
Load current: 150A
Semiconductor structure: single diode
Type of semiconductor module: diode
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+38.21 EUR
Mindestbestellmenge: 2
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IXFK44N50P pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0758E5260469&compId=IXFK44N50P.pdf?ci_sign=d640f1f4194f9dc2e366fdcc55cc57269a9c0090
IXFK44N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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VHF25-08IO7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1944179591820&compId=VHF25-ser.pdf?ci_sign=b45349266645b088e679b0569fcbdcd6528c9f31
VHF25-08IO7
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 32A
Max. forward impulse current: 180A
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Features of semiconductor devices: freewheelling diode
Gate current: 25/50mA
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.83 EUR
5+14.93 EUR
Mindestbestellmenge: 4
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MDA72-16N1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MDA72-16N1B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 1.6kV; If: 113Ax2; TO240AA
Case: TO240AA
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.6V
Max. off-state voltage: 1.6kV
Max. forward impulse current: 1.54kA
Load current: 113A x2
Semiconductor structure: common anode; double
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+37.22 EUR
Mindestbestellmenge: 2
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IXBH20N300 littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc
IXBH20N300
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 64ns
Gate charge: 105nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Power dissipation: 250W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
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DPF240X400NA pVersion=0046&contRep=ZT&docId=005056AB90B41EDA92966DC56E4A20C4&compId=DPF240X400NA.pdf?ci_sign=6fc4d0c4dfe81c07d0f6501815c460a2ef5b3645
DPF240X400NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 1.06V
Load current: 120A x2
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.2kA
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+49.82 EUR
3+49.09 EUR
10+48.62 EUR
Mindestbestellmenge: 2
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IXFP6N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D454445020B820&compId=IXFA(H%2CP)6N120P.pdf?ci_sign=943297d656831e25efec803b2ad2b28ea7b42a34
IXFP6N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 250W
Case: TO220AB
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.88 EUR
9+8.08 EUR
10+7.64 EUR
25+7.35 EUR
Mindestbestellmenge: 7
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CMA80MT1600NHR media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet
CMA80MT1600NHR
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: ISO247™
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.03 EUR
9+8.32 EUR
30+7.99 EUR
Mindestbestellmenge: 6
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IXTA200N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD8F02C5009820&compId=IXTA(P)200N055T2.pdf?ci_sign=b09970100e7885edd8a9745146ea46cc0cf0637b
IXTA200N055T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263
Polarisation: unipolar
Reverse recovery time: 49ns
Gate charge: 109nC
On-state resistance: 4.2mΩ
Drain-source voltage: 55V
Drain current: 200A
Power dissipation: 360W
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFH28N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285A2A90AE15820&compId=IXFH(Q)28N60P3.pdf?ci_sign=0f34ebb36ef205574a8cc03b1e646bbbf9a5d93c
IXFH28N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Case: TO247-3
Gate charge: 50nC
On-state resistance: 0.26Ω
Drain current: 28A
Drain-source voltage: 600V
Power dissipation: 695W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
auf Bestellung 563 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.69 EUR
11+6.51 EUR
12+6.15 EUR
30+5.91 EUR
Mindestbestellmenge: 9
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IXTH3N150 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494D3820&compId=IXTH3N150.pdf?ci_sign=9f26c436d8a2db1056604f21919c428f65c6491b
IXTH3N150
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 38.6nC
Reverse recovery time: 900ns
Drain current: 3A
Power dissipation: 250W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MCC132-14io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED783F9BB4B38B42259&compId=MCC132-14io1.pdf?ci_sign=36cce519676ef7befdb41694a085cfd5acae9487 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.04kA
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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CPC1014NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A752E0C7&compId=CPC1014N.pdf?ci_sign=a4c02ddb082d95fd63da7394eecc1088ee03122f
CPC1014NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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MCC132-16io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D5FD28D50DE27&compId=MCC132-16IO1-DTE.pdf?ci_sign=ede7be546f4de8829bef360b7a919176f9b7d2d7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.14V
Load current: 130A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-08io1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCC132-08io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 0.8kV
Kind of package: bulk
Semiconductor structure: double series
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+62.03 EUR
Mindestbestellmenge: 2
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MCC132-12io1 pVersion=0046&contRep=ZT&docId=E2920706D3E035F19A99005056AB752F&compId=L079.pdf?ci_sign=670f371d8f9338259ca653a886128336d5194817 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 5.08kA
Kind of package: bulk
Semiconductor structure: double series
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+73.47 EUR
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MCC132-18IO1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC132-14IO1B pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86EB5FF3B4F0C0C4&compId=MCC132-14io1B.pdf?ci_sign=075be34417d6ea2469487752d23265a7171d8ffc pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.4kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-16IO1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-18io1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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DSA60C45HB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9AAE31081D8BF&compId=DSA60C45HB.pdf?ci_sign=c0020e9ae6ab7c51a260e30c95c39c59b755ac0d
DSA60C45HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
Power dissipation: 160W
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.85 EUR
17+4.36 EUR
21+3.47 EUR
22+3.29 EUR
120+3.23 EUR
Mindestbestellmenge: 15
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DSA60C60PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9B77B89AF38BF&compId=DSA60C60PB.pdf?ci_sign=973506983f66217d2a25bc2d0322d9632fed9b1d
DSA60C60PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
Power dissipation: 175W
Produkt ist nicht verfügbar
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IXFK210N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB2D57B02A78BF&compId=IXF_210N30X3.pdf?ci_sign=b936bb2c259b202c476c66a13724d25b3b29cb21 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFK210N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 210A
Drain-source voltage: 300V
Reverse recovery time: 190ns
Gate charge: 375nC
On-state resistance: 5.5mΩ
Gate-source voltage: ±20V
Power dissipation: 1.25kW
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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CMA80MT1600NHB pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA78234DDB91E00C4&compId=CMA80MT1600NHB.pdf?ci_sign=d55165b06458e6d8f4d3090ec4ae7776c173744c
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: TO247-3
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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CMA60MT1600NHB pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA7822AE67CA100C4&compId=CMA60MT1600NHB.pdf?ci_sign=c7185daf19a3ef746f2ca09df41abf01f190c007
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: TO247-3
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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CMA60MT1600NHR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFB01983335E0C4&compId=CMA60MT1600NHR.pdf?ci_sign=bea444f984a1305865b5b5358c10e1731808fe4e
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: ISO247™
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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IXFB82N60P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED483D4DA614A18&compId=IXFB82N60P.pdf?ci_sign=dd1a9bcc358e003653cce67b74f6b719913560a2
IXFB82N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.03 EUR
5+29.01 EUR
25+28.53 EUR
Mindestbestellmenge: 3
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DSEC240-04A description pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8EE4C0897461E0D3&compId=DSEC240-04A.pdf?ci_sign=fa2bfa7fb181c32a0e1f65011cdbef81fa691611
DSEC240-04A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 120Ax2; SOT227UI; Ufmax: 1V
Semiconductor structure: common cathode
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227UI
Max. forward voltage: 1V
Max. off-state voltage: 0.4kV
Load current: 120A x2
Max. forward impulse current: 2kA
Produkt ist nicht verfügbar
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IXFT120N30X3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBD406B0DCD8BF&compId=IXF_120N30X3_HV.pdf?ci_sign=44c2594b70f8a430a588605e95888b402a9a745c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFT120N30X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Technology: HiPerFET™; X3-Class
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.98 EUR
5+15.69 EUR
Mindestbestellmenge: 4
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MDD26-12N1B pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7DFA740E87FDE28&compId=MDD26-12N1B-DTE.pdf?ci_sign=294202a7f37e66c7e53bb6d1714460469e1f9ac7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MDD26-12N1B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 60A
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.75 EUR
4+23.39 EUR
Mindestbestellmenge: 3
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IXFH36N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC1E5B4133F820&compId=IXFH(K%2CT)36N60P.pdf?ci_sign=f303cae51d0f22faf44d1bff5e4ef775e61b58ec
IXFH36N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.05 EUR
10+9.67 EUR
Mindestbestellmenge: 8
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IXBH6N170 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1B474D794F8BF&compId=IXBH6N170_IXBT6N170.pdf?ci_sign=11ff0739ef8a82a3156ed9b2978a4d7167a1a158
IXBH6N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate charge: 17nC
Turn-on time: 104ns
Turn-off time: 700ns
Collector current: 6A
Gate-emitter voltage: ±20V
Pulsed collector current: 36A
Power dissipation: 75W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
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IXTH260N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B9183B820&compId=IXTH260N055T2.pdf?ci_sign=37da9bdeca5f2967218f2665567ee32f4d9d1a34
IXTH260N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 60ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTH360N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF1C858E7B820&compId=IXTH(T)360N055T2.pdf?ci_sign=23fb805fbce6e75a57fc84bdd4dfce3194e210b5
IXTH360N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 78ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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LDA110STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB58A04A7C1EC&compId=LDA110.pdf?ci_sign=368e2f280db3432d5a1624678db96d81054a5ca6
LDA110STR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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CPC1016NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75420C7&compId=CPC1016N.pdf?ci_sign=476036b92a73b73fde3c51ebae6dcbccaa47872a
CPC1016NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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