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CMA80MT1600NHB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA78234DDB91E00C4&compId=CMA80MT1600NHB.pdf?ci_sign=d55165b06458e6d8f4d3090ec4ae7776c173744c Category: Triacs
Description: Triac; 1.6kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: TO247-3
Gate current: 70/90mA
Kind of package: tube
Type of thyristor: triac
Mounting: THT
Max. load current: 40A
Produkt ist nicht verfügbar
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CMA60MT1600NHB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA7822AE67CA100C4&compId=CMA60MT1600NHB.pdf?ci_sign=c7185daf19a3ef746f2ca09df41abf01f190c007 Category: Triacs
Description: Triac; 1.6kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: TO247-3
Gate current: 60/80mA
Kind of package: tube
Type of thyristor: triac
Mounting: THT
Max. load current: 30A
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CMA60MT1600NHR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFB01983335E0C4&compId=CMA60MT1600NHR.pdf?ci_sign=bea444f984a1305865b5b5358c10e1731808fe4e Category: Triacs
Description: Triac; 1.6kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: ISO247™
Gate current: 60/80mA
Kind of package: tube
Type of thyristor: triac
Mounting: THT
Max. load current: 30A
Produkt ist nicht verfügbar
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IXFB82N60P IXFB82N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED483D4DA614A18&compId=IXFB82N60P.pdf?ci_sign=dd1a9bcc358e003653cce67b74f6b719913560a2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
auf Bestellung 100 Stücke:
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3+29.03 EUR
5+29.01 EUR
25+28.53 EUR
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IXTH64N65X IXTH64N65X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B49541820&compId=IXTH64N65X.pdf?ci_sign=2d5ecb91f4102aa63d6a702790599bedd7c56077 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 450ns
Produkt ist nicht verfügbar
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DSEC240-04A DSEC240-04A IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8EE4C0897461E0D3&compId=DSEC240-04A.pdf?ci_sign=fa2bfa7fb181c32a0e1f65011cdbef81fa691611 description Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 120Ax2; SOT227UI; Ufmax: 1V
Case: SOT227UI
Max. off-state voltage: 0.4kV
Max. forward voltage: 1V
Load current: 120A x2
Semiconductor structure: common cathode
Max. forward impulse current: 2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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IXFH120N25T IXFH120N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC061820&compId=IXFH120N25T.pdf?ci_sign=794599a89c83b00c82e6901dab3e03a7b4e0dc23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 890W; TO247-3; 108ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 108ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 7 Stücke:
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6+12.36 EUR
7+11.51 EUR
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IXFT120N25X3HV IXFT120N25X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BAAA7C92A91820&compId=IXFH(T%2CQ)120N25X3_HV.pdf?ci_sign=f0265349042830fefde5800576c2580ffda544fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO268HV
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 24 Stücke:
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5+14.81 EUR
6+12.27 EUR
7+11.6 EUR
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IXFK120N30T IXFK120N30T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD9A0D060F820&compId=IXFK(X)120N30T.pdf?ci_sign=f7ad151cb9d281d49ca96d548a02ff3a244c55e0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhancement
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 24mΩ
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1+71.5 EUR
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DPF240X200NA DPF240X200NA IXYS DPF240X200NA.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 200V
Max. forward voltage: 1.06V
Load current: 120A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
auf Bestellung 56 Stücke:
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2+46.37 EUR
9+45.65 EUR
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IXFH120N30X3 IXFH120N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBD406B0DCD8BF&compId=IXF_120N30X3_HV.pdf?ci_sign=44c2594b70f8a430a588605e95888b402a9a745c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3
Case: TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 735W
Polarisation: unipolar
Kind of package: tube
Gate charge: 170nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 145ns
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 11mΩ
auf Bestellung 27 Stücke:
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4+21.46 EUR
5+14.7 EUR
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IXFT120N30X3HV IXFT120N30X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBD406B0DCD8BF&compId=IXF_120N30X3_HV.pdf?ci_sign=44c2594b70f8a430a588605e95888b402a9a745c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Case: TO268
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 735W
Polarisation: unipolar
Kind of package: tube
Gate charge: 170nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 145ns
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 11mΩ
auf Bestellung 12 Stücke:
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4+21.16 EUR
5+15.66 EUR
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IXFH90N20X3 IXFH90N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB8178012838BF&compId=IXF_90N20X3.pdf?ci_sign=cd4eb69bd34dd603e68d972f3c7cec2471da9466 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 85ns
auf Bestellung 287 Stücke:
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9+8.27 EUR
10+7.81 EUR
120+7.71 EUR
270+7.51 EUR
Mindestbestellmenge: 9
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IXFA90N20X3 IXFA90N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB797A284B78BF&compId=IXFA90N20X3.pdf?ci_sign=0f169ea34732fb9be2468462ed15b96fedff3046 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 85ns
auf Bestellung 35 Stücke:
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10+7.55 EUR
11+7.11 EUR
Mindestbestellmenge: 10
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IXFP90N20X3 IXFP90N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB8178012838BF&compId=IXF_90N20X3.pdf?ci_sign=cd4eb69bd34dd603e68d972f3c7cec2471da9466 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 85ns
auf Bestellung 300 Stücke:
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9+8.55 EUR
11+6.65 EUR
12+6.28 EUR
100+6.23 EUR
250+6.05 EUR
Mindestbestellmenge: 9
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IXFQ90N20X3 IXFQ90N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB8178012838BF&compId=IXF_90N20X3.pdf?ci_sign=cd4eb69bd34dd603e68d972f3c7cec2471da9466 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 85ns
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.13 EUR
9+8.22 EUR
Mindestbestellmenge: 6
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DSEI2X61-10B DSEI2X61-10B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23B903C5855EA&compId=DSEI2X61-10B.pdf?ci_sign=110b54c00102682d2e78134265b1372d8849911a Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 2.3V
Max. forward impulse current: 540A
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 54 Stücke:
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2+36.02 EUR
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MDD26-12N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7DFA740E87FDE28&compId=MDD26-12N1B-DTE.pdf?ci_sign=294202a7f37e66c7e53bb6d1714460469e1f9ac7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 60A
Max. forward voltage: 1.05V
Load current: 36A
Semiconductor structure: double series
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
auf Bestellung 13 Stücke:
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3+24.81 EUR
4+23.47 EUR
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IXFK94N50P2 IXFK94N50P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A7A2ADECB4AEE74A&compId=IXFx94N50P2.pdf?ci_sign=e0921357518e552a24d181fc04f1accad62b30eb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264
Drain current: 94A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 228nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 500V
auf Bestellung 4 Stücke:
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IXTK170N10P IXTK170N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9185A4CE98DE27&compId=IXTK170N10P-DTE.pdf?ci_sign=9136904f8419278af3f28381c2ff94e364518191 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Drain current: 170A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 715W
Polarisation: unipolar
Kind of package: tube
Gate charge: 198nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO264
Reverse recovery time: 120ns
Drain-source voltage: 100V
auf Bestellung 319 Stücke:
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6+12.26 EUR
7+10.38 EUR
25+10.28 EUR
100+9.98 EUR
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IXTK200N10P IXTK200N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF918B7B48D05E27&compId=IXTK200N10P-DTE.pdf?ci_sign=0721e0c52bca576f300d138b8a4cdb5a5b21794d Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 100ns
auf Bestellung 19 Stücke:
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4+18.06 EUR
5+14.41 EUR
6+13.63 EUR
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IXFH36N60P IXFH36N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC1E5B4133F820&compId=IXFH(K%2CT)36N60P.pdf?ci_sign=f303cae51d0f22faf44d1bff5e4ef775e61b58ec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 296 Stücke:
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6+13.17 EUR
7+10.64 EUR
8+10.05 EUR
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IXBH6N170 IXBH6N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1B474D794F8BF&compId=IXBH6N170_IXBT6N170.pdf?ci_sign=11ff0739ef8a82a3156ed9b2978a4d7167a1a158 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 36A
Turn-on time: 104ns
Turn-off time: 700ns
Type of transistor: IGBT
Power dissipation: 75W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 17nC
Technology: BiMOSFET™
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
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IXTQ200N10T IXTQ200N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD8557B5AE1820&compId=IXTH(Q)200N10T.pdf?ci_sign=fabd2ae31ac34d7d3d3b92bb0d92dc142a6b5f45 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Drain-source voltage: 100V
Drain current: 200A
Case: TO3P
Polarisation: unipolar
On-state resistance: 5.5mΩ
Power dissipation: 550W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 152nC
Kind of channel: enhancement
Mounting: THT
Reverse recovery time: 76ns
Type of transistor: N-MOSFET
auf Bestellung 6 Stücke:
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6+11.91 EUR
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IXTH260N055T2 IXTH260N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B9183B820&compId=IXTH260N055T2.pdf?ci_sign=37da9bdeca5f2967218f2665567ee32f4d9d1a34 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns
Reverse recovery time: 60ns
Drain-source voltage: 55V
Drain current: 260A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.14µC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
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IXTH360N055T2 IXTH360N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF1C858E7B820&compId=IXTH(T)360N055T2.pdf?ci_sign=23fb805fbce6e75a57fc84bdd4dfce3194e210b5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Reverse recovery time: 78ns
Drain-source voltage: 55V
Drain current: 360A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 935W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 330nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
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LDA110STR LDA110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB58A04A7C1EC&compId=LDA110.pdf?ci_sign=368e2f280db3432d5a1624678db96d81054a5ca6 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Mounting: SMD
Produkt ist nicht verfügbar
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CPC1016NTR CPC1016NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75420C7&compId=CPC1016N.pdf?ci_sign=476036b92a73b73fde3c51ebae6dcbccaa47872a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: SOP4
Mounting: SMT
Produkt ist nicht verfügbar
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MDD312-22N1 MDD312-22N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E01C8331E23E28&compId=MDD312-12N1-DTE.pdf?ci_sign=043306e02e77acc5fdfc8d441dfb8de71669a927 Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Max. load current: 520A
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 9.18kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
auf Bestellung 1 Stücke:
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1+180.78 EUR
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MDD312-18N1 MDD312-18N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB839C5C18C220C4&compId=MDD312-18N1.pdf?ci_sign=f229946a3c1f909f80b42a167f7d8fe79ddd8ef9 Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 10.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
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MDD312-16N1 MDD312-16N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E01C8331E23E28&compId=MDD312-12N1-DTE.pdf?ci_sign=043306e02e77acc5fdfc8d441dfb8de71669a927 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. load current: 520A
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 9.18kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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MDD312-12N1 MDD312-12N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E01C8331E23E28&compId=MDD312-12N1-DTE.pdf?ci_sign=043306e02e77acc5fdfc8d441dfb8de71669a927 Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. load current: 520A
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 9.18kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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MCD312-18io1 MCD312-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01C8815261E27&compId=MCD312-18IO1-DTE.pdf?ci_sign=46dd44920e8fc7cd073f39f8e074bbc49191b6f1 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. load current: 520A
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MCD312-14io1 MCD312-14io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFDCA8EB05EA0C4&compId=MCD312-14io1.pdf?ci_sign=dedd65bbebe3c59db1f5b685833ef89066744455 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. load current: 520A
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MDD312-14N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8392079BA940C4&compId=MDD312-14N1.pdf?ci_sign=792bda4b8120bd8f2e2ccc7516966de107f48090 Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 10.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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MDD312-20N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83AD4FE0FE20C4&compId=MDD312-20N1.pdf?ci_sign=3fd8972fcbd5dd17cb14f503e124146bb1d0a2e8 Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 10.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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MCD312-12io1 MCD312-12io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFDC6C3F32440C4&compId=MCD312-12io1.pdf?ci_sign=79086fa485071a4678fa5cfc24230c5f25f91f2a Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. load current: 520A
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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CPC1976Y CPC1976Y IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9958F47397AEAF8BF&compId=CPC1976.pdf?ci_sign=7dca44109e48c92fa27552e2a09f1c4b0605d5cc Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.25 EUR
21+3.45 EUR
22+3.26 EUR
Mindestbestellmenge: 14
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CPC1393GR CPC1393GR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 5ms
On-state resistance: 50Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
auf Bestellung 679 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.73 EUR
33+2.19 EUR
35+2.07 EUR
200+2 EUR
500+1.99 EUR
Mindestbestellmenge: 27
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CPC1963G CPC1963G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81B80C7&compId=CPC1963.pdf?ci_sign=2da1d21c69f1322b9b80590b037dcf21bef53c98 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Max. operating current: 0.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Mounting: THT
Case: DIP6
auf Bestellung 398 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.42 EUR
13+5.61 EUR
250+5.49 EUR
Mindestbestellmenge: 7
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MDO600-16N1 MDO600-16N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E0B6A8D9091E28&compId=MDO600-16N1-DTE.pdf?ci_sign=85daf70db78e274567cdc548301bd5844612f039 Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 1.01V
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.01V
Load current: 560A
Semiconductor structure: single diode
Max. forward impulse current: 12.8kA
Electrical mounting: screw
Type of semiconductor module: diode
Case: Y1-CU
Produkt ist nicht verfügbar
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IXGA30N120B3 IXGA30N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC94053C44F820&compId=IXGA(H%2CP)30N120B3.pdf?ci_sign=bccf7f842442b5dd94ada4fd3560ea2bc2b9462c Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Collector current: 30A
Pulsed collector current: 150A
Turn-on time: 56ns
Turn-off time: 471ns
Produkt ist nicht verfügbar
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IXGP30N120B3 IXGP30N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC94053C44F820&compId=IXGA(H%2CP)30N120B3.pdf?ci_sign=bccf7f842442b5dd94ada4fd3560ea2bc2b9462c Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Collector current: 30A
Pulsed collector current: 150A
Turn-on time: 56ns
Turn-off time: 471ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.58 EUR
11+6.51 EUR
12+6.15 EUR
Mindestbestellmenge: 6
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IXGH30N120B3D1 IXGH30N120B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA06EEB189820&compId=IXGH(t)30N120B3D1.pdf?ci_sign=f005ac054c26db1cc4211835ea92d6b297ff6ef3 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Collector current: 30A
Pulsed collector current: 150A
Turn-on time: 56ns
Turn-off time: 471ns
Produkt ist nicht verfügbar
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IXGT30N120B3D1 IXGT30N120B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA06EEB189820&compId=IXGH(t)30N120B3D1.pdf?ci_sign=f005ac054c26db1cc4211835ea92d6b297ff6ef3 Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO268
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Collector current: 30A
Pulsed collector current: 150A
Turn-on time: 56ns
Turn-off time: 471ns
Produkt ist nicht verfügbar
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IXYH30N120C3 IXYH30N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992C98A5CE08E38BF&compId=IXY_30N120C3.pdf?ci_sign=b4f4a8cdbbd63e273835ab59b6781e01c99521ae Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Collector current: 30A
Pulsed collector current: 145A
Turn-on time: 71ns
Turn-off time: 296ns
Produkt ist nicht verfügbar
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IXFB30N120P IXFB30N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED471DAC7962A18&compId=IXFB30N120P.pdf?ci_sign=6747945f68e4b9f5a1fcbc7994466499b2c08e0b Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 1.25kW
Case: PLUS264™
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Reverse recovery time: 300ns
Kind of channel: enhancement
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
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IXFN30N120P IXFN30N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA839D0576CD820&compId=IXFN30N120P.pdf?ci_sign=3c2a02af2466d777f644912c92670b8e0f9fb4b3 Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Case: SOT227B
On-state resistance: 0.35Ω
Gate charge: 310nC
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 300ns
Kind of channel: enhancement
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXGH30N120C3H1 IXGH30N120C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA4B1CC0B7820&compId=IXGH30N120C3H1.pdf?ci_sign=694f2b1a47c19f56311ca2c2939981f504873c81 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Collector current: 24A
Pulsed collector current: 115A
Turn-on time: 60ns
Turn-off time: 415ns
Produkt ist nicht verfügbar
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IXYH30N120C3D1 IXYH30N120C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACAFCD3B665820&compId=IXYH30N120C3D1.pdf?ci_sign=bf46a6df4aae9941a3d72e05b9e26fc24022a6f1 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Collector current: 30A
Pulsed collector current: 133A
Turn-on time: 71ns
Turn-off time: 296ns
Produkt ist nicht verfügbar
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IXYP30N120C3 IXYP30N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992C98A5CE08E38BF&compId=IXY_30N120C3.pdf?ci_sign=b4f4a8cdbbd63e273835ab59b6781e01c99521ae Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 500W
Case: TO220-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Collector current: 30A
Pulsed collector current: 145A
Turn-on time: 71ns
Turn-off time: 296ns
Produkt ist nicht verfügbar
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IXA33IF1200HB IXA33IF1200HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1DEF404B5D8BF&compId=IXA33IF1200HB.pdf?ci_sign=02e291729e01b364bd485a7eae853dab33af3810 Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Technology: Sonic FRD™; XPT™
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Collector current: 34A
Pulsed collector current: 75A
Turn-on time: 110ns
Turn-off time: 350ns
Produkt ist nicht verfügbar
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LCA125 LCA125 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977780C7&compId=LCA125.pdf?ci_sign=a2c69f3ec3a56e411e3743bb2a36524d58d4efbe Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Control current max.: 50mA
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.2 EUR
22+3.29 EUR
23+3.17 EUR
100+3.06 EUR
Mindestbestellmenge: 18
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LCA125S LCA125S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977780C7&compId=LCA125.pdf?ci_sign=a2c69f3ec3a56e411e3743bb2a36524d58d4efbe Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
12+5.98 EUR
22+3.4 EUR
23+3.22 EUR
100+3.15 EUR
Mindestbestellmenge: 12
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LCA125LS LCA125LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977900C7&compId=LCA125L.pdf?ci_sign=bd25a905c638ad1b7c2a44af4dc9a834373d843c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.08 EUR
21+3.46 EUR
22+3.27 EUR
50+3.26 EUR
100+3.2 EUR
Mindestbestellmenge: 12
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IXFN180N25T IXFN180N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C6EEE88A158BF&compId=IXFN180N25T.pdf?ci_sign=93b68cf1b62ba6ba3001a31573d6dc6b40bde40e Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 364nC
Kind of channel: enhancement
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
3+31.09 EUR
Mindestbestellmenge: 3
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IXTP12N70X2 IXTP12N70X2 IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Drain-source voltage: 700V
Drain current: 12A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 180W
Polarisation: unipolar
Kind of package: tube
Gate charge: 19nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 24A
Mounting: THT
Case: TO220AB
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.11 EUR
Mindestbestellmenge: 14
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IXTP12N70X2M IXTP12N70X2M IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Drain-source voltage: 700V
Drain current: 12A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of package: tube
Gate charge: 19nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 24A
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
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MCMA25P1600TA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.52V
Load current: 25A
Semiconductor structure: double series
Gate current: 55/80mA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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MDMA425P1600PTSF IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9986F31ACAD840D5&compId=MDMA425P1600PTSF.pdf?ci_sign=256148c68a58f15821faeddf355176a8fe2207f6 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Case: SimBus F
Max. off-state voltage: 1.6kV
Load current: 425A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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CMA80MT1600NHB pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA78234DDB91E00C4&compId=CMA80MT1600NHB.pdf?ci_sign=d55165b06458e6d8f4d3090ec4ae7776c173744c
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: TO247-3
Gate current: 70/90mA
Kind of package: tube
Type of thyristor: triac
Mounting: THT
Max. load current: 40A
Produkt ist nicht verfügbar
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CMA60MT1600NHB pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA7822AE67CA100C4&compId=CMA60MT1600NHB.pdf?ci_sign=c7185daf19a3ef746f2ca09df41abf01f190c007
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: TO247-3
Gate current: 60/80mA
Kind of package: tube
Type of thyristor: triac
Mounting: THT
Max. load current: 30A
Produkt ist nicht verfügbar
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CMA60MT1600NHR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFB01983335E0C4&compId=CMA60MT1600NHR.pdf?ci_sign=bea444f984a1305865b5b5358c10e1731808fe4e
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: ISO247™
Gate current: 60/80mA
Kind of package: tube
Type of thyristor: triac
Mounting: THT
Max. load current: 30A
Produkt ist nicht verfügbar
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IXFB82N60P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED483D4DA614A18&compId=IXFB82N60P.pdf?ci_sign=dd1a9bcc358e003653cce67b74f6b719913560a2
IXFB82N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.03 EUR
5+29.01 EUR
25+28.53 EUR
Mindestbestellmenge: 3
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IXTH64N65X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B49541820&compId=IXTH64N65X.pdf?ci_sign=2d5ecb91f4102aa63d6a702790599bedd7c56077
IXTH64N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 450ns
Produkt ist nicht verfügbar
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DSEC240-04A description pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8EE4C0897461E0D3&compId=DSEC240-04A.pdf?ci_sign=fa2bfa7fb181c32a0e1f65011cdbef81fa691611
DSEC240-04A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 120Ax2; SOT227UI; Ufmax: 1V
Case: SOT227UI
Max. off-state voltage: 0.4kV
Max. forward voltage: 1V
Load current: 120A x2
Semiconductor structure: common cathode
Max. forward impulse current: 2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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IXFH120N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC061820&compId=IXFH120N25T.pdf?ci_sign=794599a89c83b00c82e6901dab3e03a7b4e0dc23
IXFH120N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 890W; TO247-3; 108ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 108ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.36 EUR
7+11.51 EUR
Mindestbestellmenge: 6
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IXFT120N25X3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BAAA7C92A91820&compId=IXFH(T%2CQ)120N25X3_HV.pdf?ci_sign=f0265349042830fefde5800576c2580ffda544fa
IXFT120N25X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO268HV
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.81 EUR
6+12.27 EUR
7+11.6 EUR
Mindestbestellmenge: 5
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IXFK120N30T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD9A0D060F820&compId=IXFK(X)120N30T.pdf?ci_sign=f7ad151cb9d281d49ca96d548a02ff3a244c55e0
IXFK120N30T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhancement
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 24mΩ
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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DPF240X200NA DPF240X200NA.pdf
DPF240X200NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 200V
Max. forward voltage: 1.06V
Load current: 120A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+46.37 EUR
9+45.65 EUR
Mindestbestellmenge: 2
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IXFH120N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBD406B0DCD8BF&compId=IXF_120N30X3_HV.pdf?ci_sign=44c2594b70f8a430a588605e95888b402a9a745c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFH120N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3
Case: TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 735W
Polarisation: unipolar
Kind of package: tube
Gate charge: 170nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 145ns
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 11mΩ
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.46 EUR
5+14.7 EUR
Mindestbestellmenge: 4
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IXFT120N30X3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBD406B0DCD8BF&compId=IXF_120N30X3_HV.pdf?ci_sign=44c2594b70f8a430a588605e95888b402a9a745c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFT120N30X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Case: TO268
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 735W
Polarisation: unipolar
Kind of package: tube
Gate charge: 170nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 145ns
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 11mΩ
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.16 EUR
5+15.66 EUR
Mindestbestellmenge: 4
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IXFH90N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB8178012838BF&compId=IXF_90N20X3.pdf?ci_sign=cd4eb69bd34dd603e68d972f3c7cec2471da9466 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFH90N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 85ns
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.27 EUR
10+7.81 EUR
120+7.71 EUR
270+7.51 EUR
Mindestbestellmenge: 9
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IXFA90N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB797A284B78BF&compId=IXFA90N20X3.pdf?ci_sign=0f169ea34732fb9be2468462ed15b96fedff3046 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFA90N20X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 85ns
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.55 EUR
11+7.11 EUR
Mindestbestellmenge: 10
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IXFP90N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB8178012838BF&compId=IXF_90N20X3.pdf?ci_sign=cd4eb69bd34dd603e68d972f3c7cec2471da9466 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFP90N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 85ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.55 EUR
11+6.65 EUR
12+6.28 EUR
100+6.23 EUR
250+6.05 EUR
Mindestbestellmenge: 9
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IXFQ90N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB8178012838BF&compId=IXF_90N20X3.pdf?ci_sign=cd4eb69bd34dd603e68d972f3c7cec2471da9466 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFQ90N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 85ns
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.13 EUR
9+8.22 EUR
Mindestbestellmenge: 6
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DSEI2X61-10B pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23B903C5855EA&compId=DSEI2X61-10B.pdf?ci_sign=110b54c00102682d2e78134265b1372d8849911a
DSEI2X61-10B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 2.3V
Max. forward impulse current: 540A
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+36.02 EUR
Mindestbestellmenge: 2
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MDD26-12N1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7DFA740E87FDE28&compId=MDD26-12N1B-DTE.pdf?ci_sign=294202a7f37e66c7e53bb6d1714460469e1f9ac7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 60A
Max. forward voltage: 1.05V
Load current: 36A
Semiconductor structure: double series
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.81 EUR
4+23.47 EUR
Mindestbestellmenge: 3
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IXFK94N50P2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A7A2ADECB4AEE74A&compId=IXFx94N50P2.pdf?ci_sign=e0921357518e552a24d181fc04f1accad62b30eb
IXFK94N50P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264
Drain current: 94A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 228nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 500V
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.82 EUR
Mindestbestellmenge: 4
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IXTK170N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9185A4CE98DE27&compId=IXTK170N10P-DTE.pdf?ci_sign=9136904f8419278af3f28381c2ff94e364518191
IXTK170N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Drain current: 170A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 715W
Polarisation: unipolar
Kind of package: tube
Gate charge: 198nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO264
Reverse recovery time: 120ns
Drain-source voltage: 100V
auf Bestellung 319 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.26 EUR
7+10.38 EUR
25+10.28 EUR
100+9.98 EUR
Mindestbestellmenge: 6
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IXTK200N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF918B7B48D05E27&compId=IXTK200N10P-DTE.pdf?ci_sign=0721e0c52bca576f300d138b8a4cdb5a5b21794d
IXTK200N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 100ns
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.06 EUR
5+14.41 EUR
6+13.63 EUR
Mindestbestellmenge: 4
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IXFH36N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC1E5B4133F820&compId=IXFH(K%2CT)36N60P.pdf?ci_sign=f303cae51d0f22faf44d1bff5e4ef775e61b58ec
IXFH36N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.17 EUR
7+10.64 EUR
8+10.05 EUR
Mindestbestellmenge: 6
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IXBH6N170 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1B474D794F8BF&compId=IXBH6N170_IXBT6N170.pdf?ci_sign=11ff0739ef8a82a3156ed9b2978a4d7167a1a158
IXBH6N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 36A
Turn-on time: 104ns
Turn-off time: 700ns
Type of transistor: IGBT
Power dissipation: 75W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 17nC
Technology: BiMOSFET™
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
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IXTQ200N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD8557B5AE1820&compId=IXTH(Q)200N10T.pdf?ci_sign=fabd2ae31ac34d7d3d3b92bb0d92dc142a6b5f45
IXTQ200N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Drain-source voltage: 100V
Drain current: 200A
Case: TO3P
Polarisation: unipolar
On-state resistance: 5.5mΩ
Power dissipation: 550W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 152nC
Kind of channel: enhancement
Mounting: THT
Reverse recovery time: 76ns
Type of transistor: N-MOSFET
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
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IXTH260N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B9183B820&compId=IXTH260N055T2.pdf?ci_sign=37da9bdeca5f2967218f2665567ee32f4d9d1a34
IXTH260N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns
Reverse recovery time: 60ns
Drain-source voltage: 55V
Drain current: 260A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.14µC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
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IXTH360N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF1C858E7B820&compId=IXTH(T)360N055T2.pdf?ci_sign=23fb805fbce6e75a57fc84bdd4dfce3194e210b5
IXTH360N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Reverse recovery time: 78ns
Drain-source voltage: 55V
Drain current: 360A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 935W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 330nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
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LDA110STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB58A04A7C1EC&compId=LDA110.pdf?ci_sign=368e2f280db3432d5a1624678db96d81054a5ca6
LDA110STR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Mounting: SMD
Produkt ist nicht verfügbar
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CPC1016NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75420C7&compId=CPC1016N.pdf?ci_sign=476036b92a73b73fde3c51ebae6dcbccaa47872a
CPC1016NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: SOP4
Mounting: SMT
Produkt ist nicht verfügbar
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MDD312-22N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E01C8331E23E28&compId=MDD312-12N1-DTE.pdf?ci_sign=043306e02e77acc5fdfc8d441dfb8de71669a927
MDD312-22N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Max. load current: 520A
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 9.18kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+180.78 EUR
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MDD312-18N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB839C5C18C220C4&compId=MDD312-18N1.pdf?ci_sign=f229946a3c1f909f80b42a167f7d8fe79ddd8ef9
MDD312-18N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 10.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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MDD312-16N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E01C8331E23E28&compId=MDD312-12N1-DTE.pdf?ci_sign=043306e02e77acc5fdfc8d441dfb8de71669a927
MDD312-16N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. load current: 520A
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 9.18kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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MDD312-12N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E01C8331E23E28&compId=MDD312-12N1-DTE.pdf?ci_sign=043306e02e77acc5fdfc8d441dfb8de71669a927
MDD312-12N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. load current: 520A
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 9.18kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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MCD312-18io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01C8815261E27&compId=MCD312-18IO1-DTE.pdf?ci_sign=46dd44920e8fc7cd073f39f8e074bbc49191b6f1
MCD312-18io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. load current: 520A
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MCD312-14io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFDCA8EB05EA0C4&compId=MCD312-14io1.pdf?ci_sign=dedd65bbebe3c59db1f5b685833ef89066744455
MCD312-14io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. load current: 520A
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MDD312-14N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8392079BA940C4&compId=MDD312-14N1.pdf?ci_sign=792bda4b8120bd8f2e2ccc7516966de107f48090
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 10.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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MDD312-20N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83AD4FE0FE20C4&compId=MDD312-20N1.pdf?ci_sign=3fd8972fcbd5dd17cb14f503e124146bb1d0a2e8
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 10.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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MCD312-12io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFDC6C3F32440C4&compId=MCD312-12io1.pdf?ci_sign=79086fa485071a4678fa5cfc24230c5f25f91f2a
MCD312-12io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. load current: 520A
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC1976Y pVersion=0046&contRep=ZT&docId=005056AB82531EE9958F47397AEAF8BF&compId=CPC1976.pdf?ci_sign=7dca44109e48c92fa27552e2a09f1c4b0605d5cc
CPC1976Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.25 EUR
21+3.45 EUR
22+3.26 EUR
Mindestbestellmenge: 14
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CPC1393GR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640
CPC1393GR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 5ms
On-state resistance: 50Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
auf Bestellung 679 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.73 EUR
33+2.19 EUR
35+2.07 EUR
200+2 EUR
500+1.99 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
CPC1963G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81B80C7&compId=CPC1963.pdf?ci_sign=2da1d21c69f1322b9b80590b037dcf21bef53c98
CPC1963G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Max. operating current: 0.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Mounting: THT
Case: DIP6
auf Bestellung 398 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.42 EUR
13+5.61 EUR
250+5.49 EUR
Mindestbestellmenge: 7
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MDO600-16N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E0B6A8D9091E28&compId=MDO600-16N1-DTE.pdf?ci_sign=85daf70db78e274567cdc548301bd5844612f039
MDO600-16N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 1.01V
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.01V
Load current: 560A
Semiconductor structure: single diode
Max. forward impulse current: 12.8kA
Electrical mounting: screw
Type of semiconductor module: diode
Case: Y1-CU
Produkt ist nicht verfügbar
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IXGA30N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC94053C44F820&compId=IXGA(H%2CP)30N120B3.pdf?ci_sign=bccf7f842442b5dd94ada4fd3560ea2bc2b9462c
IXGA30N120B3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Collector current: 30A
Pulsed collector current: 150A
Turn-on time: 56ns
Turn-off time: 471ns
Produkt ist nicht verfügbar
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IXGP30N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC94053C44F820&compId=IXGA(H%2CP)30N120B3.pdf?ci_sign=bccf7f842442b5dd94ada4fd3560ea2bc2b9462c
IXGP30N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Collector current: 30A
Pulsed collector current: 150A
Turn-on time: 56ns
Turn-off time: 471ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.58 EUR
11+6.51 EUR
12+6.15 EUR
Mindestbestellmenge: 6
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IXGH30N120B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA06EEB189820&compId=IXGH(t)30N120B3D1.pdf?ci_sign=f005ac054c26db1cc4211835ea92d6b297ff6ef3
IXGH30N120B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Collector current: 30A
Pulsed collector current: 150A
Turn-on time: 56ns
Turn-off time: 471ns
Produkt ist nicht verfügbar
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IXGT30N120B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA06EEB189820&compId=IXGH(t)30N120B3D1.pdf?ci_sign=f005ac054c26db1cc4211835ea92d6b297ff6ef3
IXGT30N120B3D1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO268
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Collector current: 30A
Pulsed collector current: 150A
Turn-on time: 56ns
Turn-off time: 471ns
Produkt ist nicht verfügbar
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IXYH30N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531EE992C98A5CE08E38BF&compId=IXY_30N120C3.pdf?ci_sign=b4f4a8cdbbd63e273835ab59b6781e01c99521ae
IXYH30N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Collector current: 30A
Pulsed collector current: 145A
Turn-on time: 71ns
Turn-off time: 296ns
Produkt ist nicht verfügbar
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IXFB30N120P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED471DAC7962A18&compId=IXFB30N120P.pdf?ci_sign=6747945f68e4b9f5a1fcbc7994466499b2c08e0b
IXFB30N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 1.25kW
Case: PLUS264™
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Reverse recovery time: 300ns
Kind of channel: enhancement
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
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IXFN30N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA839D0576CD820&compId=IXFN30N120P.pdf?ci_sign=3c2a02af2466d777f644912c92670b8e0f9fb4b3
IXFN30N120P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Case: SOT227B
On-state resistance: 0.35Ω
Gate charge: 310nC
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 300ns
Kind of channel: enhancement
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXGH30N120C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA4B1CC0B7820&compId=IXGH30N120C3H1.pdf?ci_sign=694f2b1a47c19f56311ca2c2939981f504873c81
IXGH30N120C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Collector current: 24A
Pulsed collector current: 115A
Turn-on time: 60ns
Turn-off time: 415ns
Produkt ist nicht verfügbar
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IXYH30N120C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACAFCD3B665820&compId=IXYH30N120C3D1.pdf?ci_sign=bf46a6df4aae9941a3d72e05b9e26fc24022a6f1
IXYH30N120C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Collector current: 30A
Pulsed collector current: 133A
Turn-on time: 71ns
Turn-off time: 296ns
Produkt ist nicht verfügbar
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IXYP30N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531EE992C98A5CE08E38BF&compId=IXY_30N120C3.pdf?ci_sign=b4f4a8cdbbd63e273835ab59b6781e01c99521ae
IXYP30N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 500W
Case: TO220-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Collector current: 30A
Pulsed collector current: 145A
Turn-on time: 71ns
Turn-off time: 296ns
Produkt ist nicht verfügbar
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IXA33IF1200HB pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1DEF404B5D8BF&compId=IXA33IF1200HB.pdf?ci_sign=02e291729e01b364bd485a7eae853dab33af3810
IXA33IF1200HB
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Technology: Sonic FRD™; XPT™
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Collector current: 34A
Pulsed collector current: 75A
Turn-on time: 110ns
Turn-off time: 350ns
Produkt ist nicht verfügbar
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LCA125 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977780C7&compId=LCA125.pdf?ci_sign=a2c69f3ec3a56e411e3743bb2a36524d58d4efbe
LCA125
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Control current max.: 50mA
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.2 EUR
22+3.29 EUR
23+3.17 EUR
100+3.06 EUR
Mindestbestellmenge: 18
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LCA125S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977780C7&compId=LCA125.pdf?ci_sign=a2c69f3ec3a56e411e3743bb2a36524d58d4efbe
LCA125S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.98 EUR
22+3.4 EUR
23+3.22 EUR
100+3.15 EUR
Mindestbestellmenge: 12
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LCA125LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977900C7&compId=LCA125L.pdf?ci_sign=bd25a905c638ad1b7c2a44af4dc9a834373d843c
LCA125LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.08 EUR
21+3.46 EUR
22+3.27 EUR
50+3.26 EUR
100+3.2 EUR
Mindestbestellmenge: 12
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IXFN180N25T pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C6EEE88A158BF&compId=IXFN180N25T.pdf?ci_sign=93b68cf1b62ba6ba3001a31573d6dc6b40bde40e
IXFN180N25T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 364nC
Kind of channel: enhancement
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+31.09 EUR
Mindestbestellmenge: 3
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IXTP12N70X2 littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTP12N70X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Drain-source voltage: 700V
Drain current: 12A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 180W
Polarisation: unipolar
Kind of package: tube
Gate charge: 19nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 24A
Mounting: THT
Case: TO220AB
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.11 EUR
Mindestbestellmenge: 14
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IXTP12N70X2M littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTP12N70X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Drain-source voltage: 700V
Drain current: 12A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of package: tube
Gate charge: 19nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 24A
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
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MCMA25P1600TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.52V
Load current: 25A
Semiconductor structure: double series
Gate current: 55/80mA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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MDMA425P1600PTSF pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9986F31ACAD840D5&compId=MDMA425P1600PTSF.pdf?ci_sign=256148c68a58f15821faeddf355176a8fe2207f6
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Case: SimBus F
Max. off-state voltage: 1.6kV
Load current: 425A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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