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IXFH16N80P IXFH16N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBE3876A2C78BF&compId=IXFH16N80P.pdf?ci_sign=d439feac37a891fbe96fd8303945e86c880ee0ca Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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IXFT16N80P IXFT16N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBE3876A2C78BF&compId=IXFH16N80P.pdf?ci_sign=d439feac37a891fbe96fd8303945e86c880ee0ca Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
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IXFX27N80Q IXFX27N80Q IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 43 Stücke:
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3+24.75 EUR
4+23.39 EUR
30+23.09 EUR
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IXFH10N100P IXFH10N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECCF1314CB18BF&compId=IXFH10N100P.pdf?ci_sign=7f7b7c35add8447660ce7a497e76d475f7220bfa Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 56nC
Reverse recovery time: 300ns
On-state resistance: 1.4Ω
Drain current: 10A
Gate-source voltage: ±30V
Power dissipation: 380W
Drain-source voltage: 1kV
auf Bestellung 328 Stücke:
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8+9.14 EUR
11+6.64 EUR
30+6.48 EUR
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IXTP05N100M IXTP05N100M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B495AF820&compId=IXTP05N100M.pdf?ci_sign=22dedd1505f2893fd7c4f30fd914ac61d85a74fc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.7A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
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IXYA50N65C3 IXYA50N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9C092733F78BF&compId=IXY_50N65C3.pdf?ci_sign=9e5ac7cc0270dee769cf17451458be3d02b0bb9a Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
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IXYH50N65C3 IXYH50N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9C092733F78BF&compId=IXY_50N65C3.pdf?ci_sign=9e5ac7cc0270dee769cf17451458be3d02b0bb9a Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
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IXYH50N65C3D1 IXYH50N65C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA99A964DD41820&compId=IXYH50N65C3D1.pdf?ci_sign=db15a784f69e2c7f93edb1f3c8b2b0b8e36ac44c Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
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IXYP50N65C3 IXYP50N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9C092733F78BF&compId=IXY_50N65C3.pdf?ci_sign=9e5ac7cc0270dee769cf17451458be3d02b0bb9a Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
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IXTX120P20T IXTX120P20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EA563468D18BF&compId=IXT_120P20T.pdf?ci_sign=b303308099e4550f537d8d87d7d46f104218dd25 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PLUS247™
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Gate charge: 740nC
Reverse recovery time: 300ns
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
auf Bestellung 28 Stücke:
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3+28.16 EUR
10+27.08 EUR
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IXGX320N60B3 IXGX320N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3FAC0877D7820&compId=IXGK(x)320N60B3.pdf?ci_sign=7f3fb659fb9326cceb8b246edbd061c9df14d441 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 1.7kW
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate charge: 585nC
Turn-on time: 107ns
Turn-off time: 595ns
Collector current: 320A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IXFA34N65X2 IXFA34N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9405C1609820&compId=IXFA34N65X2.pdf?ci_sign=2925d4e0e806409ff82e30397fb37dc4d7cc660b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
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IXFH34N65X2 IXFH34N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB353D0CCAB8BF&compId=IXF_34N65X2.pdf?ci_sign=be7eb96a01584ff699e1ad5c4f717dbfd125b3d5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Technology: HiPerFET™; X2-Class
auf Bestellung 191 Stücke:
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10+7.94 EUR
12+6.09 EUR
120+5.85 EUR
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IXFP34N65X3 IXFP34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfp34n65x3-datasheet?assetguid=b8b82367-8165-4fdb-9be0-fbb097cfcc0b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
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IXTA24N65X2 IXTA24N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC5FF44FC238BF&compId=IXT_24N65X2.pdf?ci_sign=ca1ded67daf9910d4f25da90b1a96f8fc87d8744 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
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IXTA34N65X2 IXTA34N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC82B820&compId=IXTA34N65X2.pdf?ci_sign=0f26d130d1b2a8e9a14977ffb4f2cc94ed0afebc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
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IXTH34N65X2 IXTH34N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99396442E3226F8BF&compId=IXT_34N65X2.pdf?ci_sign=0ea056e8008ffbda4aac0eaac650eb7fba1e7e65 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
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IXTP24N65X2 IXTP24N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC5FF44FC238BF&compId=IXT_24N65X2.pdf?ci_sign=ca1ded67daf9910d4f25da90b1a96f8fc87d8744 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
auf Bestellung 31 Stücke:
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9+8.34 EUR
16+4.6 EUR
17+4.35 EUR
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IXTN90P20P IXTN90P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE7979492C3F64C2748&compId=IXTN90P20P.pdf?ci_sign=a8e50718a247f46e2906074292bba4b1736a5cc4 Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A
Case: SOT227B
Polarisation: unipolar
Pulsed drain current: -270A
Drain-source voltage: -200V
Drain current: -90A
Semiconductor structure: single transistor
Gate charge: 205nC
Reverse recovery time: 315ns
On-state resistance: 44mΩ
Electrical mounting: screw
Mechanical mounting: screw
Technology: PolarP™
Gate-source voltage: ±30V
Power dissipation: 890W
Type of semiconductor module: MOSFET transistor
Kind of channel: enhancement
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IXTP90N055T2 IXTP90N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D3811CE45AD820&compId=IXTA(I%2CP%2CY)90N055T2.pdf?ci_sign=83350302222346af53b5f252798d3bbf488768ce Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Drain-source voltage: 55V
Drain current: 90A
Gate charge: 42nC
Reverse recovery time: 37ns
On-state resistance: 8.4mΩ
Power dissipation: 150W
Polarisation: unipolar
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
Mounting: THT
auf Bestellung 292 Stücke:
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19+3.93 EUR
41+1.76 EUR
44+1.66 EUR
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IXTR90P20P IXTR90P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9ECF7A318A98BF&compId=IXTR90P20P.pdf?ci_sign=942ad135bc912fcff17afb282f35d9dde220eba2 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Kind of package: tube
Drain-source voltage: -200V
Drain current: -53A
Gate charge: 205nC
Reverse recovery time: 315ns
On-state resistance: 48mΩ
Power dissipation: 312W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: ISOPLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
auf Bestellung 29 Stücke:
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7+10.25 EUR
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IXFN26N100P IXFN26N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7491E14C33820&compId=IXFN26N100P.pdf?ci_sign=bdfeb01acf554089de2652a27d870b4b6759604a Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 390mΩ
Pulsed drain current: 65A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 197nC
Reverse recovery time: 300ns
Kind of channel: enhancement
auf Bestellung 6 Stücke:
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2+38.08 EUR
3+38.07 EUR
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IXYH85N120A4 IXYH85N120A4 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA0CD382CD8D300C7&compId=IXYH85N120A4.pdf?ci_sign=61e5d136f2539dc00a0b2f5a7ad7b627ab9db0cb Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 85A; 1.15kW; TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 73ns
Gate charge: 200nC
Turn-off time: 990ns
Collector current: 85A
Gate-emitter voltage: ±20V
Pulsed collector current: 520A
Power dissipation: 1.15kW
Collector-emitter voltage: 1.2kV
Technology: GenX4™; Trench™; XPT™
Type of transistor: IGBT
Case: TO247-3
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CS20-16IO1 CS20-16IO1 IXYS pVersion=0046&contRep=ZT&docId=E292046039B551F19A99005056AB752F&compId=CS20-16io1.pdf?ci_sign=95c12d052541e46b28cebba100206ceabee4e7ba pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1B88BBD0CDE27&compId=CS20-12IO1-DTE.pdf?ci_sign=fcbd17d89975b06ad5699722969e844947c99a4f Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 31A
Load current: 20A
Max. forward impulse current: 260A
Max. off-state voltage: 1.6kV
auf Bestellung 155 Stücke:
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11+6.98 EUR
14+5.13 EUR
15+4.85 EUR
20+4.66 EUR
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MCD44-12IO1B MCD44-12IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFE07B6403440C4&compId=MCD44-12io1B.pdf?ci_sign=1b3aa2724d956d6eb5fa398b58d591e43dd7c413 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Type of semiconductor module: diode-thyristor
Max. off-state voltage: 1.2kV
Max. load current: 77A
Max. forward voltage: 1.34V
Load current: 49A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
auf Bestellung 49 Stücke:
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3+27.36 EUR
36+26.9 EUR
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MCD72-12IO1B MCD72-12IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFF9B22E1AFE0C4&compId=MCD72-12io1B.pdf?ci_sign=78615c6c39c9ae2e9df718e0a197cb0e2079bdab pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.34V
Load current: 85A
Max. load current: 133A
Max. forward impulse current: 1.7kA
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
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2+36.48 EUR
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IXGK120N120A3 IXGK120N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADE298DEDCD820&compId=IXGK(x)120N120A3.pdf?ci_sign=c7a8186a489035ec0ead3df55bd4f31bb6ed73dd Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 830W
Case: TO264
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Collector-emitter voltage: 1.2kV
Turn-on time: 105ns
Turn-off time: 1365ns
Produkt ist nicht verfügbar
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IXGK120N120B3 IXGK120N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADE7EA92E47820&compId=IXGK(x)120N120B3.pdf?ci_sign=66d03d7a35e3abfe1e2dfa50266727cc891d888d Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 830W
Case: TO264
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Collector-emitter voltage: 1.2kV
Turn-on time: 122ns
Turn-off time: 885ns
Produkt ist nicht verfügbar
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IXYK120N120C3 IXYK120N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADF8429ADAB820&compId=IXYK(x)120N120C3.pdf?ci_sign=2816af6dfd2bdc776f9cb1060346c96b4d57c1e0 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: TO264
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Collector-emitter voltage: 1.2kV
Turn-on time: 105ns
Turn-off time: 346ns
auf Bestellung 40 Stücke:
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3+31.7 EUR
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IXYX120N120B3 IXYX120N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADFBCCF8BE3820&compId=IXYX120N120B3.pdf?ci_sign=29d193d35ac59a9ca5d54f9ed1b3d837837fd1b1 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Collector-emitter voltage: 1.2kV
Turn-on time: 84ns
Turn-off time: 826ns
auf Bestellung 18 Stücke:
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3+31.12 EUR
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IXYX120N120C3 IXYX120N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADF8429ADAB820&compId=IXYK(x)120N120C3.pdf?ci_sign=2816af6dfd2bdc776f9cb1060346c96b4d57c1e0 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Collector-emitter voltage: 1.2kV
Turn-on time: 105ns
Turn-off time: 346ns
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3+33.6 EUR
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MMIX1G120N120A3V1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE059161B39820&compId=MMIX1G120N120A3V1.pdf?ci_sign=ca00727da0a846fcc14b17f244a4389dd779232d Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Power dissipation: 400W
Case: SMPD
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Collector current: 105A
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Collector-emitter voltage: 1.2kV
Turn-on time: 105ns
Turn-off time: 1365ns
Produkt ist nicht verfügbar
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IX4340UE IX4340UE IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D86254426D5D8BF&compId=IX4340.pdf?ci_sign=560a08df3f47fc5e55b105888745757deeb6a350 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
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57+1.27 EUR
93+0.78 EUR
98+0.74 EUR
560+0.71 EUR
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IX4340UETR IX4340UETR IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
Produkt ist nicht verfügbar
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IXTA26P20P IXTA26P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
auf Bestellung 348 Stücke:
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9+8.65 EUR
12+5.98 EUR
13+5.65 EUR
50+5.46 EUR
100+5.43 EUR
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IXTH26P20P IXTH26P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTH48P20P IXTH48P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EE75E673818BF&compId=IXT_48P20P.pdf?ci_sign=fc96b5e643c79bc0d735ec6275c107be6971544e Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -48A
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 85mΩ
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 462W
Kind of channel: enhancement
auf Bestellung 297 Stücke:
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6+13.71 EUR
7+10.44 EUR
8+9.87 EUR
30+9.48 EUR
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IXTP26P20P IXTP26P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
auf Bestellung 188 Stücke:
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9+8.24 EUR
13+5.59 EUR
14+5.28 EUR
50+5.11 EUR
100+5.08 EUR
Mindestbestellmenge: 9
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IXTQ26P20P IXTQ26P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTR48P20P IXTR48P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00147810378BF&compId=IXTR48P20P.pdf?ci_sign=6ecb22dd6fd6b0673f62f8c7c5cf3402e6ec1242 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -30A
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 93mΩ
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 190W
Kind of channel: enhancement
auf Bestellung 58 Stücke:
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8+10.12 EUR
10+7.49 EUR
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IXTT48P20P IXTT48P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EE75E673818BF&compId=IXT_48P20P.pdf?ci_sign=fc96b5e643c79bc0d735ec6275c107be6971544e Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -48A
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 85mΩ
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 462W
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXGK55N120A3H1 IXGK55N120A3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD6CE88C967820&compId=IXGK(X)55N120A3H1.pdf?ci_sign=71c157a42906878436bf546790bc3e7783e519ba Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264
Mounting: THT
Kind of package: tube
Turn-on time: 70ns
Gate charge: 185nC
Turn-off time: 1253ns
Collector current: 55A
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 460W
Collector-emitter voltage: 1.2kV
Technology: GenX3™; PT
Type of transistor: IGBT
Case: TO264
Produkt ist nicht verfügbar
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CPC1130N CPC1130N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20CC0C7&compId=CPC1130N.pdf?ci_sign=44150b4b94226c50a67f054d89a376cc555a5c6e Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Switched voltage: max. 350V AC; max. 350V DC
auf Bestellung 12 Stücke:
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12+5.96 EUR
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CPC1709J CPC1709J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F12A0C7&compId=CPC1709.pdf?ci_sign=2ef663d2c760ef1dfecea61215b25cd407320d1c Category: DC Solid State Relays
Description: Relay: solid state; 11000mA; max.60VDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 11A
Switched voltage: max. 60V DC
Relay variant: current source
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Turn-off time: 5ms
Turn-on time: 20ms
On-state resistance: 50mΩ
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Kind of output: MOSFET
auf Bestellung 112 Stücke:
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7+11.61 EUR
9+8.19 EUR
10+7.75 EUR
25+7.74 EUR
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CPC1030N CPC1030N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75BE0C7&compId=CPC1030N.pdf?ci_sign=f5306a3547ebea4ac3441d82e07f700914fb2e7d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-off time: 1ms
Turn-on time: 2ms
On-state resistance: 30Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Kind of output: MOSFET
auf Bestellung 129 Stücke:
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31+2.32 EUR
40+1.8 EUR
43+1.7 EUR
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CPC1125N CPC1125N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20B60C7&compId=CPC1125N.pdf?ci_sign=37beec7290e33484c75fff726185ce9ab1651de2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
auf Bestellung 443 Stücke:
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32+2.3 EUR
36+1.99 EUR
52+1.4 EUR
55+1.32 EUR
Mindestbestellmenge: 32
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IXYH40N65B3D1 IXYH40N65B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9778C68A6B820&compId=IXYH(Q)40N65B3D1.pdf?ci_sign=053909c58e9af5039abdcc2cb73495ff9e375d03 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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IXYH40N65C3D1 IXYH40N65C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE8E74566229820&compId=IXYH(Q)40N65C3D1.pdf?ci_sign=70b1e20af73ed62841d5a82150bbefa1c5b9aaac Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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IXYH40N65C3H1 IXYH40N65C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA983129FB89820&compId=IXYH40N65C3H1.pdf?ci_sign=cf3acc3425587367e01a2ddb8d46796446484611 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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IXXH140N65B4 IXXH140N65B4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE565B529285820&compId=IXXH140N65B4.pdf?ci_sign=b96f4d9746e43345aadce7863f912042c14e45ad Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXXH140N65C4 IXXH140N65C4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE573AB03C7D820&compId=IXXH140N65C4.pdf?ci_sign=877ec4871964cf6a9be6efb07cc4a25c03139af1 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXFT15N100Q3 IXFT15N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECE0AF857958BF&compId=IXF_15N100Q3.pdf?ci_sign=1dd331295c1d7ea0154eeba2040fc94c4aba0ac2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
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IXTA05N100 IXTA05N100 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CFC3007D5820&compId=IXTA(P)05N100_HV.pdf?ci_sign=7a5ec5e1cee1b6c6154e445efc3fb4608695a56f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
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IXTA05N100HV IXTA05N100HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CFC3007D5820&compId=IXTA(P)05N100_HV.pdf?ci_sign=7a5ec5e1cee1b6c6154e445efc3fb4608695a56f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
auf Bestellung 290 Stücke:
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17+4.42 EUR
18+4.09 EUR
21+3.53 EUR
22+3.35 EUR
50+3.33 EUR
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IXTP05N100 IXTP05N100 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CFC3007D5820&compId=IXTA(P)05N100_HV.pdf?ci_sign=7a5ec5e1cee1b6c6154e445efc3fb4608695a56f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO220AB
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
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IXTP05N100P IXTP05N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12CB820&compId=IXTP05N100P.pdf?ci_sign=d4781f4c3352d29dcd458ddadab27f78de1e370d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.5A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
Produkt ist nicht verfügbar
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IXDN614CI IXDN614CI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 729 Stücke:
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14+5.45 EUR
16+4.59 EUR
17+4.33 EUR
50+4.16 EUR
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IXDN614SI IXDN614SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...35V
Kind of package: tube
Output current: -14...14A
Turn-off time: 130ns
Turn-on time: 140ns
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
auf Bestellung 23 Stücke:
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18+4.19 EUR
20+3.7 EUR
22+3.39 EUR
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DSEI2X121-02A DSEI2X121-02A IXYS pVersion=0046&contRep=ZT&docId=E1C04A8FCC4F99F1A6F5005056AB5A8F&compId=DSEI2x121-02A.pdf?ci_sign=15d097bd648c4bf545b15456011d6b6ce72e2bdb Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 123A x2
Case: SOT227B
Max. forward voltage: 1.1V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 133 Stücke:
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3+32.89 EUR
5+32.38 EUR
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IXFN220N20X3 IXFN220N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9909A88A74D1A18BF&compId=IXFN220N20X3.pdf?ci_sign=dca2a6ff4e3c80e41699692c4799b3d0cdfcd691 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 204nC
Reverse recovery time: 128ns
Kind of channel: enhancement
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IXFH16N80P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBE3876A2C78BF&compId=IXFH16N80P.pdf?ci_sign=d439feac37a891fbe96fd8303945e86c880ee0ca
IXFH16N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXFT16N80P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBE3876A2C78BF&compId=IXFH16N80P.pdf?ci_sign=d439feac37a891fbe96fd8303945e86c880ee0ca
IXFT16N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX27N80Q pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd
IXFX27N80Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.75 EUR
4+23.39 EUR
30+23.09 EUR
Mindestbestellmenge: 3
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IXFH10N100P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECCF1314CB18BF&compId=IXFH10N100P.pdf?ci_sign=7f7b7c35add8447660ce7a497e76d475f7220bfa
IXFH10N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 56nC
Reverse recovery time: 300ns
On-state resistance: 1.4Ω
Drain current: 10A
Gate-source voltage: ±30V
Power dissipation: 380W
Drain-source voltage: 1kV
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.14 EUR
11+6.64 EUR
30+6.48 EUR
Mindestbestellmenge: 8
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IXTP05N100M pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B495AF820&compId=IXTP05N100M.pdf?ci_sign=22dedd1505f2893fd7c4f30fd914ac61d85a74fc
IXTP05N100M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.7A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
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IXYA50N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9C092733F78BF&compId=IXY_50N65C3.pdf?ci_sign=9e5ac7cc0270dee769cf17451458be3d02b0bb9a
IXYA50N65C3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
Produkt ist nicht verfügbar
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IXYH50N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9C092733F78BF&compId=IXY_50N65C3.pdf?ci_sign=9e5ac7cc0270dee769cf17451458be3d02b0bb9a
IXYH50N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
Produkt ist nicht verfügbar
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IXYH50N65C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA99A964DD41820&compId=IXYH50N65C3D1.pdf?ci_sign=db15a784f69e2c7f93edb1f3c8b2b0b8e36ac44c
IXYH50N65C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
Produkt ist nicht verfügbar
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IXYP50N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9C092733F78BF&compId=IXY_50N65C3.pdf?ci_sign=9e5ac7cc0270dee769cf17451458be3d02b0bb9a
IXYP50N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
Produkt ist nicht verfügbar
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IXTX120P20T pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EA563468D18BF&compId=IXT_120P20T.pdf?ci_sign=b303308099e4550f537d8d87d7d46f104218dd25
IXTX120P20T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PLUS247™
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Gate charge: 740nC
Reverse recovery time: 300ns
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+28.16 EUR
10+27.08 EUR
Mindestbestellmenge: 3
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IXGX320N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3FAC0877D7820&compId=IXGK(x)320N60B3.pdf?ci_sign=7f3fb659fb9326cceb8b246edbd061c9df14d441
IXGX320N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 1.7kW
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate charge: 585nC
Turn-on time: 107ns
Turn-off time: 595ns
Collector current: 320A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
auf Bestellung 1 Stücke:
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Anzahl Preis
1+71.5 EUR
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IXFA34N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9405C1609820&compId=IXFA34N65X2.pdf?ci_sign=2925d4e0e806409ff82e30397fb37dc4d7cc660b
IXFA34N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXFH34N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB353D0CCAB8BF&compId=IXF_34N65X2.pdf?ci_sign=be7eb96a01584ff699e1ad5c4f717dbfd125b3d5
IXFH34N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Technology: HiPerFET™; X2-Class
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.94 EUR
12+6.09 EUR
120+5.85 EUR
Mindestbestellmenge: 10
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IXFP34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfp34n65x3-datasheet?assetguid=b8b82367-8165-4fdb-9be0-fbb097cfcc0b
IXFP34N65X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXTA24N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC5FF44FC238BF&compId=IXT_24N65X2.pdf?ci_sign=ca1ded67daf9910d4f25da90b1a96f8fc87d8744
IXTA24N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
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IXTA34N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC82B820&compId=IXTA34N65X2.pdf?ci_sign=0f26d130d1b2a8e9a14977ffb4f2cc94ed0afebc
IXTA34N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXTH34N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE99396442E3226F8BF&compId=IXT_34N65X2.pdf?ci_sign=0ea056e8008ffbda4aac0eaac650eb7fba1e7e65
IXTH34N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXTP24N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC5FF44FC238BF&compId=IXT_24N65X2.pdf?ci_sign=ca1ded67daf9910d4f25da90b1a96f8fc87d8744
IXTP24N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.34 EUR
16+4.6 EUR
17+4.35 EUR
Mindestbestellmenge: 9
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IXTN90P20P pVersion=0046&contRep=ZT&docId=005056AB752F1EE7979492C3F64C2748&compId=IXTN90P20P.pdf?ci_sign=a8e50718a247f46e2906074292bba4b1736a5cc4
IXTN90P20P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A
Case: SOT227B
Polarisation: unipolar
Pulsed drain current: -270A
Drain-source voltage: -200V
Drain current: -90A
Semiconductor structure: single transistor
Gate charge: 205nC
Reverse recovery time: 315ns
On-state resistance: 44mΩ
Electrical mounting: screw
Mechanical mounting: screw
Technology: PolarP™
Gate-source voltage: ±30V
Power dissipation: 890W
Type of semiconductor module: MOSFET transistor
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTP90N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D3811CE45AD820&compId=IXTA(I%2CP%2CY)90N055T2.pdf?ci_sign=83350302222346af53b5f252798d3bbf488768ce
IXTP90N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Drain-source voltage: 55V
Drain current: 90A
Gate charge: 42nC
Reverse recovery time: 37ns
On-state resistance: 8.4mΩ
Power dissipation: 150W
Polarisation: unipolar
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
Mounting: THT
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
41+1.76 EUR
44+1.66 EUR
Mindestbestellmenge: 19
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IXTR90P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9ECF7A318A98BF&compId=IXTR90P20P.pdf?ci_sign=942ad135bc912fcff17afb282f35d9dde220eba2
IXTR90P20P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Kind of package: tube
Drain-source voltage: -200V
Drain current: -53A
Gate charge: 205nC
Reverse recovery time: 315ns
On-state resistance: 48mΩ
Power dissipation: 312W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: ISOPLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.25 EUR
Mindestbestellmenge: 7
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IXFN26N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7491E14C33820&compId=IXFN26N100P.pdf?ci_sign=bdfeb01acf554089de2652a27d870b4b6759604a
IXFN26N100P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 390mΩ
Pulsed drain current: 65A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 197nC
Reverse recovery time: 300ns
Kind of channel: enhancement
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+38.08 EUR
3+38.07 EUR
Mindestbestellmenge: 2
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IXYH85N120A4 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA0CD382CD8D300C7&compId=IXYH85N120A4.pdf?ci_sign=61e5d136f2539dc00a0b2f5a7ad7b627ab9db0cb
IXYH85N120A4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 85A; 1.15kW; TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 73ns
Gate charge: 200nC
Turn-off time: 990ns
Collector current: 85A
Gate-emitter voltage: ±20V
Pulsed collector current: 520A
Power dissipation: 1.15kW
Collector-emitter voltage: 1.2kV
Technology: GenX4™; Trench™; XPT™
Type of transistor: IGBT
Case: TO247-3
Produkt ist nicht verfügbar
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CS20-16IO1 pVersion=0046&contRep=ZT&docId=E292046039B551F19A99005056AB752F&compId=CS20-16io1.pdf?ci_sign=95c12d052541e46b28cebba100206ceabee4e7ba pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1B88BBD0CDE27&compId=CS20-12IO1-DTE.pdf?ci_sign=fcbd17d89975b06ad5699722969e844947c99a4f
CS20-16IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 31A
Load current: 20A
Max. forward impulse current: 260A
Max. off-state voltage: 1.6kV
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.98 EUR
14+5.13 EUR
15+4.85 EUR
20+4.66 EUR
Mindestbestellmenge: 11
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MCD44-12IO1B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFE07B6403440C4&compId=MCD44-12io1B.pdf?ci_sign=1b3aa2724d956d6eb5fa398b58d591e43dd7c413 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCD44-12IO1B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Type of semiconductor module: diode-thyristor
Max. off-state voltage: 1.2kV
Max. load current: 77A
Max. forward voltage: 1.34V
Load current: 49A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+27.36 EUR
36+26.9 EUR
Mindestbestellmenge: 3
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MCD72-12IO1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFF9B22E1AFE0C4&compId=MCD72-12io1B.pdf?ci_sign=78615c6c39c9ae2e9df718e0a197cb0e2079bdab pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCD72-12IO1B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.34V
Load current: 85A
Max. load current: 133A
Max. forward impulse current: 1.7kA
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+36.48 EUR
Mindestbestellmenge: 2
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IXGK120N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADE298DEDCD820&compId=IXGK(x)120N120A3.pdf?ci_sign=c7a8186a489035ec0ead3df55bd4f31bb6ed73dd
IXGK120N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 830W
Case: TO264
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Collector-emitter voltage: 1.2kV
Turn-on time: 105ns
Turn-off time: 1365ns
Produkt ist nicht verfügbar
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IXGK120N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADE7EA92E47820&compId=IXGK(x)120N120B3.pdf?ci_sign=66d03d7a35e3abfe1e2dfa50266727cc891d888d
IXGK120N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 830W
Case: TO264
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Collector-emitter voltage: 1.2kV
Turn-on time: 122ns
Turn-off time: 885ns
Produkt ist nicht verfügbar
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IXYK120N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADF8429ADAB820&compId=IXYK(x)120N120C3.pdf?ci_sign=2816af6dfd2bdc776f9cb1060346c96b4d57c1e0
IXYK120N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: TO264
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Collector-emitter voltage: 1.2kV
Turn-on time: 105ns
Turn-off time: 346ns
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+31.7 EUR
Mindestbestellmenge: 3
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IXYX120N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADFBCCF8BE3820&compId=IXYX120N120B3.pdf?ci_sign=29d193d35ac59a9ca5d54f9ed1b3d837837fd1b1
IXYX120N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Collector-emitter voltage: 1.2kV
Turn-on time: 84ns
Turn-off time: 826ns
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+31.12 EUR
Mindestbestellmenge: 3
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IXYX120N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADF8429ADAB820&compId=IXYK(x)120N120C3.pdf?ci_sign=2816af6dfd2bdc776f9cb1060346c96b4d57c1e0
IXYX120N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Collector-emitter voltage: 1.2kV
Turn-on time: 105ns
Turn-off time: 346ns
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+33.6 EUR
Mindestbestellmenge: 3
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MMIX1G120N120A3V1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE059161B39820&compId=MMIX1G120N120A3V1.pdf?ci_sign=ca00727da0a846fcc14b17f244a4389dd779232d
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Power dissipation: 400W
Case: SMPD
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Collector current: 105A
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Collector-emitter voltage: 1.2kV
Turn-on time: 105ns
Turn-off time: 1365ns
Produkt ist nicht verfügbar
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IX4340UE pVersion=0046&contRep=ZT&docId=005056AB82531EE98D86254426D5D8BF&compId=IX4340.pdf?ci_sign=560a08df3f47fc5e55b105888745757deeb6a350
IX4340UE
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
auf Bestellung 1775 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.12 EUR
57+1.27 EUR
93+0.78 EUR
98+0.74 EUR
560+0.71 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IX4340UETR
IX4340UETR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
Produkt ist nicht verfügbar
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IXTA26P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87
IXTA26P20P
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.65 EUR
12+5.98 EUR
13+5.65 EUR
50+5.46 EUR
100+5.43 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXTH26P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87
IXTH26P20P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH48P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EE75E673818BF&compId=IXT_48P20P.pdf?ci_sign=fc96b5e643c79bc0d735ec6275c107be6971544e
IXTH48P20P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -48A
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 85mΩ
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 462W
Kind of channel: enhancement
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.71 EUR
7+10.44 EUR
8+9.87 EUR
30+9.48 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXTP26P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87
IXTP26P20P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
auf Bestellung 188 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.24 EUR
13+5.59 EUR
14+5.28 EUR
50+5.11 EUR
100+5.08 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ26P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87
IXTQ26P20P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTR48P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00147810378BF&compId=IXTR48P20P.pdf?ci_sign=6ecb22dd6fd6b0673f62f8c7c5cf3402e6ec1242
IXTR48P20P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -30A
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 93mΩ
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 190W
Kind of channel: enhancement
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.12 EUR
10+7.49 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTT48P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EE75E673818BF&compId=IXT_48P20P.pdf?ci_sign=fc96b5e643c79bc0d735ec6275c107be6971544e
IXTT48P20P
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -48A
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 85mΩ
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 462W
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXGK55N120A3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD6CE88C967820&compId=IXGK(X)55N120A3H1.pdf?ci_sign=71c157a42906878436bf546790bc3e7783e519ba
IXGK55N120A3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264
Mounting: THT
Kind of package: tube
Turn-on time: 70ns
Gate charge: 185nC
Turn-off time: 1253ns
Collector current: 55A
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 460W
Collector-emitter voltage: 1.2kV
Technology: GenX3™; PT
Type of transistor: IGBT
Case: TO264
Produkt ist nicht verfügbar
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CPC1130N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20CC0C7&compId=CPC1130N.pdf?ci_sign=44150b4b94226c50a67f054d89a376cc555a5c6e
CPC1130N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Switched voltage: max. 350V AC; max. 350V DC
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.96 EUR
Mindestbestellmenge: 12
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CPC1709J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F12A0C7&compId=CPC1709.pdf?ci_sign=2ef663d2c760ef1dfecea61215b25cd407320d1c
CPC1709J
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 11000mA; max.60VDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 11A
Switched voltage: max. 60V DC
Relay variant: current source
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Turn-off time: 5ms
Turn-on time: 20ms
On-state resistance: 50mΩ
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Kind of output: MOSFET
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.61 EUR
9+8.19 EUR
10+7.75 EUR
25+7.74 EUR
Mindestbestellmenge: 7
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CPC1030N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75BE0C7&compId=CPC1030N.pdf?ci_sign=f5306a3547ebea4ac3441d82e07f700914fb2e7d
CPC1030N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-off time: 1ms
Turn-on time: 2ms
On-state resistance: 30Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Kind of output: MOSFET
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.32 EUR
40+1.8 EUR
43+1.7 EUR
Mindestbestellmenge: 31
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CPC1125N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20B60C7&compId=CPC1125N.pdf?ci_sign=37beec7290e33484c75fff726185ce9ab1651de2
CPC1125N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
auf Bestellung 443 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.3 EUR
36+1.99 EUR
52+1.4 EUR
55+1.32 EUR
Mindestbestellmenge: 32
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IXYH40N65B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9778C68A6B820&compId=IXYH(Q)40N65B3D1.pdf?ci_sign=053909c58e9af5039abdcc2cb73495ff9e375d03
IXYH40N65B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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IXYH40N65C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE8E74566229820&compId=IXYH(Q)40N65C3D1.pdf?ci_sign=70b1e20af73ed62841d5a82150bbefa1c5b9aaac
IXYH40N65C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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IXYH40N65C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA983129FB89820&compId=IXYH40N65C3H1.pdf?ci_sign=cf3acc3425587367e01a2ddb8d46796446484611
IXYH40N65C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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IXXH140N65B4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE565B529285820&compId=IXXH140N65B4.pdf?ci_sign=b96f4d9746e43345aadce7863f912042c14e45ad
IXXH140N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXXH140N65C4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE573AB03C7D820&compId=IXXH140N65C4.pdf?ci_sign=877ec4871964cf6a9be6efb07cc4a25c03139af1
IXXH140N65C4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXFT15N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECE0AF857958BF&compId=IXF_15N100Q3.pdf?ci_sign=1dd331295c1d7ea0154eeba2040fc94c4aba0ac2
IXFT15N100Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTA05N100 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CFC3007D5820&compId=IXTA(P)05N100_HV.pdf?ci_sign=7a5ec5e1cee1b6c6154e445efc3fb4608695a56f
IXTA05N100
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
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IXTA05N100HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CFC3007D5820&compId=IXTA(P)05N100_HV.pdf?ci_sign=7a5ec5e1cee1b6c6154e445efc3fb4608695a56f
IXTA05N100HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.42 EUR
18+4.09 EUR
21+3.53 EUR
22+3.35 EUR
50+3.33 EUR
Mindestbestellmenge: 17
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IXTP05N100 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CFC3007D5820&compId=IXTA(P)05N100_HV.pdf?ci_sign=7a5ec5e1cee1b6c6154e445efc3fb4608695a56f
IXTP05N100
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO220AB
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
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IXTP05N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12CB820&compId=IXTP05N100P.pdf?ci_sign=d4781f4c3352d29dcd458ddadab27f78de1e370d
IXTP05N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.5A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
Produkt ist nicht verfügbar
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IXDN614CI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDN614CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 729 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.45 EUR
16+4.59 EUR
17+4.33 EUR
50+4.16 EUR
Mindestbestellmenge: 14
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IXDN614SI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDN614SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...35V
Kind of package: tube
Output current: -14...14A
Turn-off time: 130ns
Turn-on time: 140ns
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.19 EUR
20+3.7 EUR
22+3.39 EUR
Mindestbestellmenge: 18
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DSEI2X121-02A pVersion=0046&contRep=ZT&docId=E1C04A8FCC4F99F1A6F5005056AB5A8F&compId=DSEI2x121-02A.pdf?ci_sign=15d097bd648c4bf545b15456011d6b6ce72e2bdb
DSEI2X121-02A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 123A x2
Case: SOT227B
Max. forward voltage: 1.1V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 133 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.89 EUR
5+32.38 EUR
Mindestbestellmenge: 3
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IXFN220N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE9909A88A74D1A18BF&compId=IXFN220N20X3.pdf?ci_sign=dca2a6ff4e3c80e41699692c4799b3d0cdfcd691 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFN220N20X3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 204nC
Reverse recovery time: 128ns
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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