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IXFK102N30P IXFK102N30P IXYS IXFK102N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Case: TO264
Drain-source voltage: 300V
Drain current: 102A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Kind of package: tube
Gate charge: 224nC
Kind of channel: enhancement
Mounting: THT
auf Bestellung 5 Stücke:
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4+19.99 EUR
5+14.30 EUR
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IXTH32N65X IXTH32N65X IXYS IXTH(P,Q)32N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 169 Stücke:
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8+9.12 EUR
11+6.55 EUR
12+6.19 EUR
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IXFN230N20T IXFN230N20T IXYS IXFN230N20T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 1090W
Case: SOT227B
On-state resistance: 7.5mΩ
Gate charge: 358nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Pulsed drain current: 630A
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: GigaMOS™
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
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IXFN240N15T2 IXFN240N15T2 IXYS IXFN240N15T2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Pulsed drain current: 600A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 5.2mΩ
Gate charge: 460nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 140ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: GigaMOS™; HiPerFET™; TrenchT2™
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DSS25-0025B DSS25-0025B IXYS DSS25-0025B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 330A
Kind of package: tube
Power dissipation: 90W
Produkt ist nicht verfügbar
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IXFN36N100 IXFN36N100 IXYS IXFN36N100.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 36A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.24Ω
Pulsed drain current: 144A
Power dissipation: 694W
Technology: HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 180ns
Gate charge: 380nC
Kind of channel: enhancement
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IXTP2R4N120P IXTP2R4N120P IXYS IXT_2R4N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Reverse recovery time: 920ns
Drain-source voltage: 1.2kV
Drain current: 2.4A
On-state resistance: 7.5Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 37nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 6A
Mounting: THT
Case: TO220AB
auf Bestellung 307 Stücke:
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9+8.32 EUR
14+5.32 EUR
15+5.03 EUR
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MCD200-16IO1 MCD200-16IO1 IXYS PCN241015_Y4-M6 screw.pdf MCD200-16IO1-DTE.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Max. off-state voltage: 1.6kV
Max. load current: 340A
Max. forward voltage: 1.2V
Load current: 216A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 8kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Case: Y4-M6
auf Bestellung 8 Stücke:
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CPC1973Y CPC1973Y IXYS CPC1973.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.35mA
Switched voltage: max. 400V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 5Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 2.5kV
Control current max.: 50mA
Turn-on time: 5ms
Turn-off time: 3ms
Body dimensions: 21.08x10.16x3.3mm
auf Bestellung 79 Stücke:
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11+6.79 EUR
16+4.65 EUR
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IXTP28P065T IXTP28P065T IXYS IXT_28P065T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
Produkt ist nicht verfügbar
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IXFB82N60Q3 IXFB82N60Q3 IXYS IXFB82N60Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
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5+15.82 EUR
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IXTP15P15T IXTP15P15T IXYS IXT_15P15T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Gate charge: 48nC
Technology: TrenchP™
auf Bestellung 182 Stücke:
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14+5.21 EUR
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25+2.90 EUR
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CPC1218Y CPC1218Y IXYS CPC1218.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; 600mA; max.60VAC; max.60VDC; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1.1Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
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CPC1393G CPC1393G IXYS CPC1393.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
auf Bestellung 386 Stücke:
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CPC1393GV CPC1393GV IXYS CPC1393.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
auf Bestellung 500 Stücke:
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17+4.33 EUR
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IXFK230N20T IXFK230N20T IXYS IXFK(X)230N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1670W
Case: TO264
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 358nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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CMA50P1600FC CMA50P1600FC IXYS CMA50P1600FC.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80/200mA; THT; tube
Max. off-state voltage: 1.6kV
Max. load current: 79A
Load current: 50A
Semiconductor structure: double series
Gate current: 80/200mA
Max. forward impulse current: 610A
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: ISOPLUS i4-pac™ x024a
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DMA50P1200HB DMA50P1200HB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-3
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Max. forward impulse current: 0.5kA
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO247-3
auf Bestellung 42 Stücke:
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9+8.14 EUR
13+5.52 EUR
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DMA50P1200HR DMA50P1200HR IXYS DMA50P1200HR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 555A; ISO247™; 210W
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.28V
Load current: 50A
Semiconductor structure: double series
Max. forward impulse current: 555A
Power dissipation: 210W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: ISO247™
auf Bestellung 42 Stücke:
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5+14.67 EUR
7+10.52 EUR
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DMA50P1600HB DMA50P1600HB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-3
Max. off-state voltage: 1.6kV
Load current: 50A
Semiconductor structure: double series
Max. forward impulse current: 0.5kA
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO247-3
auf Bestellung 100 Stücke:
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12+5.99 EUR
13+5.66 EUR
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LDA111 LDA111 IXYS LDA111.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 3.75kV; DIP6
Case: DIP6
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
Mounting: THT
Produkt ist nicht verfügbar
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LDA111S IXYS LDA111.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Mounting: SMD
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LDA111STR LDA111STR IXYS LDA111.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Mounting: SMD
Produkt ist nicht verfügbar
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IXFN66N85X IXFN66N85X IXYS IXFN66N85X.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 230nC
Kind of channel: enhancement
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PLA140L PLA140L IXYS PLA140L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
On-state resistance: 8Ω
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: THT
Case: DIP6
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PLA171P PLA171P IXYS PLA171.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 5kV
Control current max.: 50mA
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.16mm
auf Bestellung 175 Stücke:
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14+5.18 EUR
22+3.35 EUR
23+3.16 EUR
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MCMA140PD1200TB IXYS MCMA140PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 220A
Max. forward voltage: 1.28V
Load current: 140A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 2.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCMA140PD1600TB IXYS MCMA140PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 220A
Max. forward voltage: 1.28V
Load current: 140A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 2.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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CMA30E1600PB CMA30E1600PB IXYS CMA30E1600PB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 47A
Load current: 30A
Gate current: 28/50mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 220A
auf Bestellung 70 Stücke:
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20+3.75 EUR
28+2.62 EUR
29+2.47 EUR
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IXTN200N10L2 IXTN200N10L2 IXYS IXTN200N10L2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 178A; SOT227B; screw; Idm: 500A
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 178A
Power dissipation: 830W
Case: SOT227B
On-state resistance: 11mΩ
Gate charge: 540nC
Kind of channel: enhancement
Reverse recovery time: 245ns
Pulsed drain current: 500A
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: Linear L2™
Gate-source voltage: ±30V
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IXFP26N65X2 IXFP26N65X2 IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
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7+11.33 EUR
10+7.16 EUR
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VUO34-14NO1 VUO34-14NO1 IXYS VUO34-14NO1.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 45A; Ifsm: 300A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.13V
Load current: 45A
Max. forward impulse current: 0.3kA
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1+71.50 EUR
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VUO34-18NO1 VUO34-18NO1 IXYS VUO34-18NO1.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 45A; Ifsm: 300A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.13V
Load current: 45A
Max. forward impulse current: 0.3kA
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IXFN40N110P IXFN40N110P IXYS IXFN40N110P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 34A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 310nC
Kind of channel: enhancement
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IXFN40N110Q3 IXFN40N110Q3 IXYS IXFN40N110Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 35A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 434ns
Gate charge: 300nC
Kind of channel: enhancement
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MCD95-16IO1B IXYS MCD95-16IO1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Max. off-state voltage: 1.6kV
Load current: 116A
Max. forward impulse current: 2.25kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.28V
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
Max. load current: 180A
Semiconductor structure: double series
Gate current: 150/200mA
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CPC1540G CPC1540G IXYS CPC1540.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
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IXFH12N80P IXFH12N80P IXYS IXFH12N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Produkt ist nicht verfügbar
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CPC2317N CPC2317N IXYS CPC2317N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: SO8
On-state resistance: 16Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
auf Bestellung 114 Stücke:
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IXDD609D2TR IXDD609D2TR IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IX2120B IX2120B IXYS IX2120.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Supply voltage: 15...20V
Kind of package: tube
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...150°C
Voltage class: 1.2kV
auf Bestellung 232 Stücke:
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16+4.52 EUR
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IX4428MTR IX4428MTR IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Supply voltage: 4.5...30V
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IXYY8N90C3 IXYY8N90C3 IXYS IXYP(y)8N90C3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252
Type of transistor: IGBT
Power dissipation: 125W
Case: TO252
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Pulsed collector current: 48A
Collector current: 8A
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Turn-on time: 39ns
Gate-emitter voltage: ±20V
Turn-off time: 238ns
auf Bestellung 308 Stücke:
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16+4.72 EUR
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IXYP8N90C3D1 IXYP8N90C3D1 IXYS IXYA(P)8N90C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Pulsed collector current: 48A
Collector current: 8A
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Turn-on time: 39ns
Gate-emitter voltage: ±20V
Turn-off time: 238ns
auf Bestellung 147 Stücke:
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14+5.36 EUR
15+4.82 EUR
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20+3.63 EUR
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IXTP34N65X2 IXTP34N65X2 IXYS IXT_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
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IXFP4N100P IXFP4N100P IXYS IXFA(P)4N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
auf Bestellung 156 Stücke:
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IXFN60N80P IXFN60N80P IXYS IXFN60N80P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 53A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.14Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 250nC
Kind of channel: enhancement
auf Bestellung 261 Stücke:
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2+47.43 EUR
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IXFH12N100P IXFH12N100P IXYS IXFH12N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 286 Stücke:
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7+11.55 EUR
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IXTH12N100L IXTH12N100L IXYS IXTH12N100L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
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IXFX230N20T IXFX230N20T IXYS IXFK(X)230N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 358nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 118 Stücke:
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4+21.25 EUR
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IXFX300N20X3 IXFX300N20X3 IXYS IXF_300N20X3.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
auf Bestellung 21 Stücke:
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3+32.30 EUR
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IXFX32N80P IXFX32N80P IXYS IXFK(X)32N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 32A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXGX55N120A3H1 IXGX55N120A3H1 IXYS IXGK(X)55N120A3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™
Mounting: THT
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 185nC
Technology: GenX3™; PT
Case: PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 55A
Pulsed collector current: 400A
Turn-on time: 70ns
Turn-off time: 1253ns
Produkt ist nicht verfügbar
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IXTH11P50 IXTH11P50 IXYS DS94535L(IXTH-T11P50).pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 0.5µs
Drain-source voltage: -500V
Drain current: -11A
On-state resistance: 0.75Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 145nC
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 298 Stücke:
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7+10.45 EUR
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IXFB210N20P IXFB210N20P IXYS IXFB210N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Mounting: THT
Drain-source voltage: 200V
Drain current: 210A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.5kW
Polarisation: unipolar
Case: PLUS264™
Kind of package: tube
Gate charge: 255nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
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IXFN210N20P IXFN210N20P IXYS IXFN210N20P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 188A
Power dissipation: 1.07kW
Case: SOT227B
On-state resistance: 10.5mΩ
Gate charge: 255nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Pulsed drain current: 600A
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
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MCD312-16io1 MCD312-16io1 IXYS MCC312-12IO1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. load current: 520A
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
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1+214.60 EUR
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PAA110LS PAA110LS IXYS PAA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.25ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: SMT
On-state resistance: 22Ω
Turn-on time: 1ms
auf Bestellung 171 Stücke:
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10+7.54 EUR
11+6.55 EUR
12+6.19 EUR
100+5.95 EUR
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IXYP8N90C3 IXYP8N90C3 IXYS IXYP(y)8N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Pulsed collector current: 48A
Collector current: 8A
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Turn-on time: 39ns
Gate-emitter voltage: ±20V
Turn-off time: 238ns
Produkt ist nicht verfügbar
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IXFT24N80P IXFT24N80P IXYS IXFH(K,T)24N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK102N30P IXFK102N30P.pdf
IXFK102N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Case: TO264
Drain-source voltage: 300V
Drain current: 102A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Kind of package: tube
Gate charge: 224nC
Kind of channel: enhancement
Mounting: THT
auf Bestellung 5 Stücke:
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Anzahl Preis
4+19.99 EUR
5+14.30 EUR
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IXTH32N65X IXTH(P,Q)32N65X.pdf
IXTH32N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 169 Stücke:
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Anzahl Preis
8+9.12 EUR
11+6.55 EUR
12+6.19 EUR
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IXFN230N20T IXFN230N20T.pdf
IXFN230N20T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 1090W
Case: SOT227B
On-state resistance: 7.5mΩ
Gate charge: 358nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Pulsed drain current: 630A
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: GigaMOS™
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
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IXFN240N15T2 IXFN240N15T2.pdf
IXFN240N15T2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Pulsed drain current: 600A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 5.2mΩ
Gate charge: 460nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 140ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: GigaMOS™; HiPerFET™; TrenchT2™
auf Bestellung 1 Stücke:
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Anzahl Preis
1+71.50 EUR
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DSS25-0025B DSS25-0025B.pdf
DSS25-0025B
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 330A
Kind of package: tube
Power dissipation: 90W
Produkt ist nicht verfügbar
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IXFN36N100 description IXFN36N100.pdf
IXFN36N100
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 36A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.24Ω
Pulsed drain current: 144A
Power dissipation: 694W
Technology: HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 180ns
Gate charge: 380nC
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+88.72 EUR
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IXTP2R4N120P IXT_2R4N120P.pdf
IXTP2R4N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Reverse recovery time: 920ns
Drain-source voltage: 1.2kV
Drain current: 2.4A
On-state resistance: 7.5Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 37nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 6A
Mounting: THT
Case: TO220AB
auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.32 EUR
14+5.32 EUR
15+5.03 EUR
Mindestbestellmenge: 9
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MCD200-16IO1 PCN241015_Y4-M6 screw.pdf MCD200-16IO1-DTE.pdf
MCD200-16IO1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Max. off-state voltage: 1.6kV
Max. load current: 340A
Max. forward voltage: 1.2V
Load current: 216A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 8kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Case: Y4-M6
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+100.53 EUR
6+96.67 EUR
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CPC1973Y CPC1973.pdf
CPC1973Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.35mA
Switched voltage: max. 400V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 5Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 2.5kV
Control current max.: 50mA
Turn-on time: 5ms
Turn-off time: 3ms
Body dimensions: 21.08x10.16x3.3mm
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.79 EUR
16+4.65 EUR
17+4.39 EUR
Mindestbestellmenge: 11
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IXTP28P065T IXT_28P065T.pdf
IXTP28P065T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
Produkt ist nicht verfügbar
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IXFB82N60Q3 IXFB82N60Q3.pdf
IXFB82N60Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.82 EUR
Mindestbestellmenge: 5
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IXTP15P15T IXT_15P15T.pdf
IXTP15P15T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Gate charge: 48nC
Technology: TrenchP™
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.21 EUR
24+3.07 EUR
25+2.90 EUR
Mindestbestellmenge: 14
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CPC1218Y CPC1218.pdf
CPC1218Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; 600mA; max.60VAC; max.60VDC; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1.1Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
auf Bestellung 460 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.16 EUR
23+3.13 EUR
25+2.96 EUR
Mindestbestellmenge: 14
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CPC1393G CPC1393.pdf
CPC1393G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
auf Bestellung 386 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.03 EUR
35+2.07 EUR
37+1.96 EUR
Mindestbestellmenge: 24
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CPC1393GV CPC1393.pdf
CPC1393GV
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.33 EUR
35+2.07 EUR
37+1.96 EUR
Mindestbestellmenge: 17
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IXFK230N20T IXFK(X)230N20T.pdf
IXFK230N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1670W
Case: TO264
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 358nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.37 EUR
Mindestbestellmenge: 3
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CMA50P1600FC CMA50P1600FC.pdf
CMA50P1600FC
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80/200mA; THT; tube
Max. off-state voltage: 1.6kV
Max. load current: 79A
Load current: 50A
Semiconductor structure: double series
Gate current: 80/200mA
Max. forward impulse current: 610A
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: ISOPLUS i4-pac™ x024a
Produkt ist nicht verfügbar
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DMA50P1200HB
DMA50P1200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-3
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Max. forward impulse current: 0.5kA
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO247-3
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.14 EUR
13+5.52 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
DMA50P1200HR DMA50P1200HR.pdf
DMA50P1200HR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 555A; ISO247™; 210W
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.28V
Load current: 50A
Semiconductor structure: double series
Max. forward impulse current: 555A
Power dissipation: 210W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: ISO247™
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.67 EUR
7+10.52 EUR
8+9.95 EUR
Mindestbestellmenge: 5
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DMA50P1600HB
DMA50P1600HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-3
Max. off-state voltage: 1.6kV
Load current: 50A
Semiconductor structure: double series
Max. forward impulse current: 0.5kA
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO247-3
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.14 EUR
12+5.99 EUR
13+5.66 EUR
Mindestbestellmenge: 9
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LDA111 LDA111.pdf
LDA111
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 3.75kV; DIP6
Case: DIP6
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
Mounting: THT
Produkt ist nicht verfügbar
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LDA111S LDA111.pdf
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Mounting: SMD
Produkt ist nicht verfügbar
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LDA111STR LDA111.pdf
LDA111STR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Mounting: SMD
Produkt ist nicht verfügbar
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IXFN66N85X IXFN66N85X.pdf
IXFN66N85X
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 230nC
Kind of channel: enhancement
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+46.40 EUR
Mindestbestellmenge: 2
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PLA140L PLA140L.pdf
PLA140L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
On-state resistance: 8Ω
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Mounting: THT
Case: DIP6
Produkt ist nicht verfügbar
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PLA171P PLA171.pdf
PLA171P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 5kV
Control current max.: 50mA
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.16mm
auf Bestellung 175 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.18 EUR
22+3.35 EUR
23+3.16 EUR
Mindestbestellmenge: 14
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MCMA140PD1200TB MCMA140PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 220A
Max. forward voltage: 1.28V
Load current: 140A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 2.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCMA140PD1600TB MCMA140PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 220A
Max. forward voltage: 1.28V
Load current: 140A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 2.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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CMA30E1600PB CMA30E1600PB.pdf
CMA30E1600PB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 47A
Load current: 30A
Gate current: 28/50mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 220A
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.75 EUR
28+2.62 EUR
29+2.47 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXTN200N10L2 IXTN200N10L2.pdf
IXTN200N10L2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 178A; SOT227B; screw; Idm: 500A
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 178A
Power dissipation: 830W
Case: SOT227B
On-state resistance: 11mΩ
Gate charge: 540nC
Kind of channel: enhancement
Reverse recovery time: 245ns
Pulsed drain current: 500A
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: Linear L2™
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
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IXFP26N65X2
IXFP26N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.33 EUR
10+7.16 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
VUO34-14NO1 VUO34-14NO1.pdf
VUO34-14NO1
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 45A; Ifsm: 300A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.13V
Load current: 45A
Max. forward impulse current: 0.3kA
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
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VUO34-18NO1 VUO34-18NO1.pdf
VUO34-18NO1
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 45A; Ifsm: 300A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.13V
Load current: 45A
Max. forward impulse current: 0.3kA
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
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IXFN40N110P IXFN40N110P.pdf
IXFN40N110P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 34A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 310nC
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
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IXFN40N110Q3 IXFN40N110Q3.pdf
IXFN40N110Q3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 35A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 434ns
Gate charge: 300nC
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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MCD95-16IO1B MCD95-16IO1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Max. off-state voltage: 1.6kV
Load current: 116A
Max. forward impulse current: 2.25kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.28V
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
Max. load current: 180A
Semiconductor structure: double series
Gate current: 150/200mA
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+45.00 EUR
10+44.29 EUR
36+43.27 EUR
Mindestbestellmenge: 2
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CPC1540G CPC1540.pdf
CPC1540G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
auf Bestellung 975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.43 EUR
28+2.60 EUR
30+2.46 EUR
Mindestbestellmenge: 14
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IXFH12N80P IXFH12N80P.pdf
IXFH12N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Produkt ist nicht verfügbar
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CPC2317N CPC2317N.pdf
CPC2317N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: SO8
On-state resistance: 16Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.89 EUR
38+1.89 EUR
40+1.79 EUR
Mindestbestellmenge: 25
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IXDD609D2TR IXDD609CI.pdf
IXDD609D2TR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.46 EUR
Mindestbestellmenge: 29
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IX2120B IX2120.pdf
IX2120B
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Supply voltage: 15...20V
Kind of package: tube
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...150°C
Voltage class: 1.2kV
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.52 EUR
18+3.99 EUR
20+3.59 EUR
21+3.49 EUR
28+3.35 EUR
Mindestbestellmenge: 16
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IX4428MTR IX4426-27-28.pdf
IX4428MTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Supply voltage: 4.5...30V
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
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IXYY8N90C3 IXYP(y)8N90C3.pdf
IXYY8N90C3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252
Type of transistor: IGBT
Power dissipation: 125W
Case: TO252
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Pulsed collector current: 48A
Collector current: 8A
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Turn-on time: 39ns
Gate-emitter voltage: ±20V
Turn-off time: 238ns
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.72 EUR
30+2.43 EUR
32+2.30 EUR
140+2.22 EUR
Mindestbestellmenge: 16
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IXYP8N90C3D1 IXYA(P)8N90C3D1.pdf
IXYP8N90C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Pulsed collector current: 48A
Collector current: 8A
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Turn-on time: 39ns
Gate-emitter voltage: ±20V
Turn-off time: 238ns
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.36 EUR
15+4.82 EUR
19+3.85 EUR
20+3.63 EUR
Mindestbestellmenge: 14
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IXTP34N65X2 IXT_34N65X2.pdf
IXTP34N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
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IXFP4N100P IXFA(P)4N100P.pdf
IXFP4N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
auf Bestellung 156 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.50 EUR
18+4.06 EUR
23+3.23 EUR
24+3.05 EUR
Mindestbestellmenge: 16
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IXFN60N80P description IXFN60N80P.pdf
IXFN60N80P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 53A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.14Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 250nC
Kind of channel: enhancement
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+47.43 EUR
10+45.62 EUR
Mindestbestellmenge: 2
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IXFH12N100P IXFH12N100P.pdf
IXFH12N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.55 EUR
9+8.28 EUR
10+7.84 EUR
Mindestbestellmenge: 7
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IXTH12N100L IXTH12N100L.pdf
IXTH12N100L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
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IXFX230N20T IXFK(X)230N20T.pdf
IXFX230N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 358nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.25 EUR
Mindestbestellmenge: 4
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IXFX300N20X3 IXF_300N20X3.pdf 200VProductBrief.pdf
IXFX300N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.30 EUR
Mindestbestellmenge: 3
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IXFX32N80P IXFK(X)32N80P.pdf
IXFX32N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 32A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXGX55N120A3H1 IXGK(X)55N120A3H1.pdf
IXGX55N120A3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™
Mounting: THT
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 185nC
Technology: GenX3™; PT
Case: PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 55A
Pulsed collector current: 400A
Turn-on time: 70ns
Turn-off time: 1253ns
Produkt ist nicht verfügbar
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IXTH11P50 DS94535L(IXTH-T11P50).pdf
IXTH11P50
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 0.5µs
Drain-source voltage: -500V
Drain current: -11A
On-state resistance: 0.75Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 145nC
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.99 EUR
7+10.45 EUR
10+10.28 EUR
30+10.05 EUR
Mindestbestellmenge: 6
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IXFB210N20P IXFB210N20P.pdf
IXFB210N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Mounting: THT
Drain-source voltage: 200V
Drain current: 210A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.5kW
Polarisation: unipolar
Case: PLUS264™
Kind of package: tube
Gate charge: 255nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFN210N20P IXFN210N20P.pdf
IXFN210N20P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 188A
Power dissipation: 1.07kW
Case: SOT227B
On-state resistance: 10.5mΩ
Gate charge: 255nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Pulsed drain current: 600A
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
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MCD312-16io1 MCC312-12IO1.pdf
MCD312-16io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. load current: 520A
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+214.60 EUR
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PAA110LS PAA110L.pdf
PAA110LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.25ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: SMT
On-state resistance: 22Ω
Turn-on time: 1ms
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.54 EUR
11+6.55 EUR
12+6.19 EUR
100+5.95 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXYP8N90C3 IXYP(y)8N90C3.pdf
IXYP8N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Pulsed collector current: 48A
Collector current: 8A
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Turn-on time: 39ns
Gate-emitter voltage: ±20V
Turn-off time: 238ns
Produkt ist nicht verfügbar
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IXFT24N80P IXFH(K,T)24N80P.pdf
IXFT24N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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