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CPC1390GV CPC1390GV IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320042C0C7&compId=CPC1390.pdf?ci_sign=02d27267f722e98ae1add0787a699a87ad053c38 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Operating temperature: -40...85°C
Case: DIP4
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 1ms
Body dimensions: 4.57x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Max. operating current: 140mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.59 EUR
35+2.04 EUR
38+1.93 EUR
Mindestbestellmenge: 20
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IXFH34N60X2A IXFH34N60X2A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2850059F7229820&compId=IXFH34N60X2A.pdf?ci_sign=670b82a0339a408baa8b89dce5ae98931a570f1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Pulsed drain current: 68A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Features of semiconductor devices: ultra junction x-class
Technology: HiPerFET™; X2-Class
Reverse recovery time: 164ns
auf Bestellung 2 Stücke:
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2+35.75 EUR
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IXFK64N60Q3 IXFK64N60Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D463260E2E9820&compId=IXFK(X)64N60Q3.pdf?ci_sign=2b8a7c779d19716f7657570711d367d2c1aaefc9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
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5+16.12 EUR
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IXTP14N60X2 IXTP14N60X2 IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 16 Stücke:
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10+7.15 EUR
16+4.46 EUR
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IXXH30N60B3D1 IXXH30N60B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0EF4E1770591E27&compId=IXXH30N60B3D1-DTE.pdf?ci_sign=75d2af8a37123feddd1d882cb6506af0f88f6182 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 23ns
Turn-off time: 125ns
Collector current: 30A
Pulsed collector current: 115A
auf Bestellung 55 Stücke:
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10+7.15 EUR
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IXXN110N65B4H1 IXXN110N65B4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F3014ED0C9B820&compId=IXXN110N65B4H1.pdf?ci_sign=b28fc3aed32959875df04b4bf39ca4ce608cbe7c Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
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IXXN110N65C4H1 IXXN110N65C4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F30564423ED820&compId=IXXN110N65C4H1.pdf?ci_sign=c9eb661bdd50eec71321e7879af73afec49776cd Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
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IXXR110N65B4H1 IXXR110N65B4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA2540B7AF3820&compId=IXXR110N65B4H1.pdf?ci_sign=5890856bd86011b903242c6fef3c7868545f561d Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 70A
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
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IXXX110N65B4H1 IXXX110N65B4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992DF299313CAB8BF&compId=IXX_110N65B4H1.pdf?ci_sign=138ddc32a5ddfa541fc19fa01c5429737b49acfd Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
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IXTH30N60P IXTH30N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDC0F215143820&compId=IXTH(Q%2CT%2CV)30N60P_S.pdf?ci_sign=23cb872edd8c988b4691a847d6364d4ee8eca206 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.84 EUR
8+9.38 EUR
9+8.87 EUR
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IXTQ30N60L2 IXTQ30N60L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993961825E677F8BF&compId=IXT_30N60L2.pdf?ci_sign=a187da0396ffeb0ca9f228226b1261de24fac5f0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
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IXTQ30N60P IXTQ30N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDC0F215143820&compId=IXTH(Q%2CT%2CV)30N60P_S.pdf?ci_sign=23cb872edd8c988b4691a847d6364d4ee8eca206 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
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IXTT30N60L2 IXTT30N60L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993961825E677F8BF&compId=IXT_30N60L2.pdf?ci_sign=a187da0396ffeb0ca9f228226b1261de24fac5f0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Technology: Linear L2™
Gate charge: 335nC
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IXTT30N60P IXTT30N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDC0F215143820&compId=IXTH(Q%2CT%2CV)30N60P_S.pdf?ci_sign=23cb872edd8c988b4691a847d6364d4ee8eca206 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
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IXXH30N60C3D1 IXXH30N60C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA0640C0AE3820&compId=IXXH30N60C3D1.pdf?ci_sign=acb988c96b71486701945515382354c24866b822 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 110A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 37ns
Gate charge: 37nC
Turn-off time: 166ns
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IXXQ30N60B3M IXXQ30N60B3M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE7ECB7A14AD820&compId=IXXQ30N60B3M.pdf?ci_sign=a883fe68cd02608d671c8106875dd32cd7167cad Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Case: TO3PF
Mounting: THT
Kind of package: tube
Collector current: 19A
Gate-emitter voltage: ±20V
Power dissipation: 90W
Pulsed collector current: 140A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 57ns
Gate charge: 39nC
Turn-off time: 292ns
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IXFX55N50 IXFX55N50 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A95C294BFDB8BF&compId=IXFX50N50_IXFX55N50.pdf?ci_sign=9823f069cf4013329e963cbfdae0e3ff065e6ff0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 55A; 520W; PLUS247™; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Power dissipation: 520W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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IXTA15N50L2 IXTA15N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D33E4DE449B820&compId=IXTA(H%2CP)15N50L2.pdf?ci_sign=585782a79e3d37974bcfba11f733e4bddedca203 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
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IXTH15N50L2 IXTH15N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D33E4DE449B820&compId=IXTA(H%2CP)15N50L2.pdf?ci_sign=585782a79e3d37974bcfba11f733e4bddedca203 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
auf Bestellung 38 Stücke:
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6+12.73 EUR
9+8.21 EUR
30+8.15 EUR
Mindestbestellmenge: 6
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IXTP15N50L2 IXTP15N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D33E4DE449B820&compId=IXTA(H%2CP)15N50L2.pdf?ci_sign=585782a79e3d37974bcfba11f733e4bddedca203 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
auf Bestellung 70 Stücke:
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7+11.68 EUR
9+8.08 EUR
10+7.64 EUR
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IX4426MTR IX4426MTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...30V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Operating temperature: -40...125°C
Case: DFN8
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IXFH100N25P IXFH100N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC009820&compId=IXFH100N25P.pdf?ci_sign=8543bb8bfc45a45bf095f4e45a85eebb13fb2f81 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 100A; 600W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 250V
Drain current: 100A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Gate charge: 185nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
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IXFH100N30X3 IXFH100N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBCDA1FA5458BF&compId=IXF_100N30X3_HV.pdf?ci_sign=291cad4ee4c338832090f6d9d224fee09028d26c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 48W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 130ns
Drain-source voltage: 300V
Drain current: 100A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 48W
Polarisation: unipolar
Gate charge: 122nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.34 EUR
6+12.74 EUR
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IXTK100N25P IXTK100N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90F1896B593E27&compId=IXTK100N25P-DTE.pdf?ci_sign=ca4a750df92eea9f262967bae79b2712e1f8dcc2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Mounting: THT
Gate charge: 185nC
Technology: PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 100A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Kind of package: tube
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IXXH100N60C3 IXXH100N60C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB4E5B26A23820&compId=IXXH100N60C3.pdf?ci_sign=d34a8167233d2e352f733d1eb503fd101039fa57 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 830W
Turn-off time: 0.22µs
Turn-on time: 95s
Kind of package: tube
Case: TO247-3
Pulsed collector current: 380A
Collector current: 100A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Gate charge: 150nC
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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IXTP260N055T2 IXTP260N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAF933DD53820&compId=IXTA(P)260N055T2.pdf?ci_sign=7d74893cde6dc5f8997d0fa7ff9adc13d7fa48f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Power dissipation: 480W
auf Bestellung 8 Stücke:
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8+8.94 EUR
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IXFK48N60P IXFK48N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A94E9FB88C78BF&compId=IXF_48N60P.pdf?ci_sign=2d8decaa7bf5853333c30536e1424c18bf5cd01b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
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IXGA48N60A3 IXGA48N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE53B33B1DDB820&compId=IXGA(P%2CH)48N60A3.pdf?ci_sign=3de66c7eadd74b16b8875cd3a050200178617cff Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Technology: GenX3™; PT
auf Bestellung 84 Stücke:
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IXGH48N60B3C1 IXGH48N60B3C1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B381E6C0878A5E28&compId=IXGH48N60B3C1-DTE.pdf?ci_sign=721837839cfff5b1fb45e8394d3190c2f5f5cb01 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 48ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
auf Bestellung 29 Stücke:
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IXGH48N60B3D1 IXGH48N60B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BF95DB9A0A17820&compId=IXGH48N60B3D1.pdf?ci_sign=b88ef15e046b033bedf0667f01dda5696c066ffb Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 44ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
auf Bestellung 303 Stücke:
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9+7.98 EUR
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IXGH48N60C3D1 IXGH48N60C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA3ABB7C7C7820&compId=IXGH48N60C3D1.pdf?ci_sign=9e8b41e0496f7b4552d6efd4bbf0620554365264 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 187ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 250A
auf Bestellung 224 Stücke:
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9+8.32 EUR
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30+7.58 EUR
120+7.56 EUR
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CPC1117N CPC1117N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A38CFB799FD8BF&compId=cpc1117n.pdf?ci_sign=42c5ed3862d631ccfa4f4ee18df640d714bcd8ff Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
auf Bestellung 427 Stücke:
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55+1.3 EUR
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MMO62-12IO6 MMO62-12IO6 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B8F478DC2F5F9E28&compId=MMo62-12io6-DTE.pdf?ci_sign=10ad4c18982c2d0b7cdd649068aaadc5dde3b16c Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V
Case: SOT227B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.29V
Load current: 30A
Semiconductor structure: opposing
Gate current: 100mA
Max. forward impulse current: 0.4kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
auf Bestellung 77 Stücke:
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DSP8-12A DSP8-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF09019D31818BF&compId=DSP8-12A.pdf?ci_sign=4c1df90e7f9f491684d5e61712aacbe284a80828 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Power dissipation: 100W
Kind of package: tube
auf Bestellung 232 Stücke:
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19+3.78 EUR
25+2.87 EUR
35+2.07 EUR
37+1.96 EUR
100+1.87 EUR
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DSP8-12AS-TRL DSP8-12AS-TRL IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4740C124560C4&compId=DSP8-12AS.pdf?ci_sign=c7e88fe8621910a4bd9800ab0ed9988bac77f308 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
Kind of package: reel; tape
auf Bestellung 792 Stücke:
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19+3.78 EUR
22+3.36 EUR
24+3.02 EUR
26+2.85 EUR
100+2.82 EUR
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DSP8-12AS-TUB DSP8-12AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4740C124560C4&compId=DSP8-12AS.pdf?ci_sign=c7e88fe8621910a4bd9800ab0ed9988bac77f308 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Produkt ist nicht verfügbar
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CPC1945Y CPC1945Y IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4384923AE38BF&compId=CPC1945Y.pdf?ci_sign=a1bb4db4c3f93e15666e949682f73ba24088c71a Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
On-state resistance: 0.34Ω
Turn-on time: 5ms
Turn-off time: 3ms
Body dimensions: 19.2x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 120V AC
Control current max.: 100mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: SIP4
auf Bestellung 212 Stücke:
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20+3.7 EUR
29+2.55 EUR
30+2.42 EUR
75+2.32 EUR
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IXFH24N80P IXFH24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK24N80P IXFK24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK27N80Q IXFK27N80Q IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK34N80 IXFK34N80 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5531C0BEB820&compId=IXFK(X)34N80.pdf?ci_sign=c21449cd8db7a186cc87835ff14b3420826840c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK44N80P IXFK44N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55A88536A9820&compId=IXFK(X)44N80P.pdf?ci_sign=fe7a22c35d7909b220aeebf7fe0c0b6a1d419d2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 255 Stücke:
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4+19.66 EUR
10+18.9 EUR
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IXFK44N80Q3 IXFK44N80Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D555DA4D32F820&compId=IXFK(X)44N80Q3.pdf?ci_sign=dd049728423ed64df76c419a8fd12eba8ab2dd10 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MXHV9910B MXHV9910B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561 Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: tube
Produkt ist nicht verfügbar
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MXHV9910BE IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561 Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: tube
Produkt ist nicht verfügbar
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MXHV9910BETR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561 Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MXHV9910BTR MXHV9910BTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561 Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IXTA08N50D2 IXTA08N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389DDEB1D445820&compId=IXTA(P%2CY)08N50D2.pdf?ci_sign=d92cfc0f9209a370f1a625c4b843304b6b0d742c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Produkt ist nicht verfügbar
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IXTP08N50D2 IXTP08N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389DDEB1D445820&compId=IXTA(P%2CY)08N50D2.pdf?ci_sign=d92cfc0f9209a370f1a625c4b843304b6b0d742c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.59 EUR
35+2.07 EUR
37+1.96 EUR
100+1.92 EUR
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IXTY08N50D2 IXTY08N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389DDEB1D445820&compId=IXTA(P%2CY)08N50D2.pdf?ci_sign=d92cfc0f9209a370f1a625c4b843304b6b0d742c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXYH75N120B4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 24ns
Gate charge: 157nC
Turn-off time: 235ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 1.15kW
Collector-emitter voltage: 1.2kV
Technology: GenX4™; XPT™
Type of transistor: IGBT
Case: TO247; TO247-3
Produkt ist nicht verfügbar
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CPC2025N CPC2025N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8BD80C7&compId=CPC2025N.pdf?ci_sign=68e0652c8b9ad4e6df71484331099d8df430468c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Turn-off time: 1ms
Turn-on time: 2ms
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 30Ω
Case: SO8
Insulation voltage: 1.5kV
Mounting: SMT
Kind of output: MOSFET
auf Bestellung 124 Stücke:
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35+2.04 EUR
40+1.82 EUR
42+1.72 EUR
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CPC2025NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8BD80C7&compId=CPC2025N.pdf?ci_sign=68e0652c8b9ad4e6df71484331099d8df430468c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Turn-off time: 1ms
Turn-on time: 2ms
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 30Ω
Case: SO8
Insulation voltage: 1.5kV
Mounting: SMT
Kind of output: MOSFET
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IXKC15N60C5 IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
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CLA100PD1200NA CLA100PD1200NA IXYS Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Case: SOT227B
Max. off-state voltage: 1.2kV
Max. load current: 150A
Max. forward voltage: 1.21V
Load current: 100A
Semiconductor structure: double series
Gate current: 40/80mA
Max. forward impulse current: 1.5kA
Threshold on-voltage: 0.83V
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
2+36.99 EUR
3+34.98 EUR
Mindestbestellmenge: 2
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IXA20PG1200DHGLB IXA20PG1200DHGLB IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA72D372C388143&compId=IXA20PG1200DHGLB.pdf?ci_sign=92f5d9e5dd1ef2369a8aa01671aa29244ac7835a pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA7B6B514524143&compId=SMPD%20MOSFET%20and%20IGBTs_Product%20Brief.pdf?ci_sign=8939cb3b27982fb8078171d673d8402b08fb3dc3 Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Power dissipation: 130W
Electrical mounting: SMT
Technology: ISOPLUS™; Sonic FRD™
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: SMPD-B
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.13 EUR
7+10.64 EUR
10+10.3 EUR
Mindestbestellmenge: 6
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IXA30RG1200DHGLB IXA30RG1200DHGLB IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA759B209DC6143&compId=IXA30RG1200DHGLB.pdf?ci_sign=f6eb0238051d648061ebca520c13ec7c26cb22f3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA7B6B514524143&compId=SMPD%20MOSFET%20and%20IGBTs_Product%20Brief.pdf?ci_sign=8939cb3b27982fb8078171d673d8402b08fb3dc3 Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Power dissipation: 147W
Technology: ISOPLUS™; Sonic FRD™
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.59 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXFH70N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh70n65x3-datasheet?assetguid=b5819e4b-925f-4a8e-b528-ff8e8c93904b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 110A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 165ns
Produkt ist nicht verfügbar
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IXFN170N65X2 IXFN170N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C956F78DF18BF&compId=IXFN170N65X2.pdf?ci_sign=e4ca9b77a78619ba688f7d6c410bc4fd14cd2866 Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 13mΩ
Gate charge: 434nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 270ns
Produkt ist nicht verfügbar
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CPC1135N CPC1135N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20E20C7&compId=CPC1135N.pdf?ci_sign=4a18a2dbc91e1ae370bd5a8a3cd54dcab1a8fe21 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
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CPC1390GV pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320042C0C7&compId=CPC1390.pdf?ci_sign=02d27267f722e98ae1add0787a699a87ad053c38
CPC1390GV
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Operating temperature: -40...85°C
Case: DIP4
On-state resistance: 22Ω
Turn-on time: 1ms
Turn-off time: 1ms
Body dimensions: 4.57x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Max. operating current: 140mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.59 EUR
35+2.04 EUR
38+1.93 EUR
Mindestbestellmenge: 20
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IXFH34N60X2A pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2850059F7229820&compId=IXFH34N60X2A.pdf?ci_sign=670b82a0339a408baa8b89dce5ae98931a570f1b
IXFH34N60X2A
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Pulsed drain current: 68A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Features of semiconductor devices: ultra junction x-class
Technology: HiPerFET™; X2-Class
Reverse recovery time: 164ns
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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IXFK64N60Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D463260E2E9820&compId=IXFK(X)64N60Q3.pdf?ci_sign=2b8a7c779d19716f7657570711d367d2c1aaefc9
IXFK64N60Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.12 EUR
Mindestbestellmenge: 5
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IXTP14N60X2 littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTP14N60X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
16+4.46 EUR
Mindestbestellmenge: 10
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IXXH30N60B3D1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0EF4E1770591E27&compId=IXXH30N60B3D1-DTE.pdf?ci_sign=75d2af8a37123feddd1d882cb6506af0f88f6182
IXXH30N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 23ns
Turn-off time: 125ns
Collector current: 30A
Pulsed collector current: 115A
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXXN110N65B4H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F3014ED0C9B820&compId=IXXN110N65B4H1.pdf?ci_sign=b28fc3aed32959875df04b4bf39ca4ce608cbe7c
IXXN110N65B4H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXXN110N65C4H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F30564423ED820&compId=IXXN110N65C4H1.pdf?ci_sign=c9eb661bdd50eec71321e7879af73afec49776cd
IXXN110N65C4H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXXR110N65B4H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA2540B7AF3820&compId=IXXR110N65B4H1.pdf?ci_sign=5890856bd86011b903242c6fef3c7868545f561d
IXXR110N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 70A
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
Produkt ist nicht verfügbar
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IXXX110N65B4H1 pVersion=0046&contRep=ZT&docId=005056AB82531EE992DF299313CAB8BF&compId=IXX_110N65B4H1.pdf?ci_sign=138ddc32a5ddfa541fc19fa01c5429737b49acfd
IXXX110N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
Produkt ist nicht verfügbar
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IXTH30N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDC0F215143820&compId=IXTH(Q%2CT%2CV)30N60P_S.pdf?ci_sign=23cb872edd8c988b4691a847d6364d4ee8eca206
IXTH30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.84 EUR
8+9.38 EUR
9+8.87 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ30N60L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993961825E677F8BF&compId=IXT_30N60L2.pdf?ci_sign=a187da0396ffeb0ca9f228226b1261de24fac5f0
IXTQ30N60L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
Produkt ist nicht verfügbar
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IXTQ30N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDC0F215143820&compId=IXTH(Q%2CT%2CV)30N60P_S.pdf?ci_sign=23cb872edd8c988b4691a847d6364d4ee8eca206
IXTQ30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Produkt ist nicht verfügbar
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IXTT30N60L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993961825E677F8BF&compId=IXT_30N60L2.pdf?ci_sign=a187da0396ffeb0ca9f228226b1261de24fac5f0
IXTT30N60L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Technology: Linear L2™
Gate charge: 335nC
Produkt ist nicht verfügbar
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IXTT30N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDC0F215143820&compId=IXTH(Q%2CT%2CV)30N60P_S.pdf?ci_sign=23cb872edd8c988b4691a847d6364d4ee8eca206
IXTT30N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Produkt ist nicht verfügbar
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IXXH30N60C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA0640C0AE3820&compId=IXXH30N60C3D1.pdf?ci_sign=acb988c96b71486701945515382354c24866b822
IXXH30N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 110A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 37ns
Gate charge: 37nC
Turn-off time: 166ns
Produkt ist nicht verfügbar
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IXXQ30N60B3M pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE7ECB7A14AD820&compId=IXXQ30N60B3M.pdf?ci_sign=a883fe68cd02608d671c8106875dd32cd7167cad
IXXQ30N60B3M
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Case: TO3PF
Mounting: THT
Kind of package: tube
Collector current: 19A
Gate-emitter voltage: ±20V
Power dissipation: 90W
Pulsed collector current: 140A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 57ns
Gate charge: 39nC
Turn-off time: 292ns
Produkt ist nicht verfügbar
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IXFX55N50 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A95C294BFDB8BF&compId=IXFX50N50_IXFX55N50.pdf?ci_sign=9823f069cf4013329e963cbfdae0e3ff065e6ff0
IXFX55N50
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 55A; 520W; PLUS247™; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Power dissipation: 520W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXTA15N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D33E4DE449B820&compId=IXTA(H%2CP)15N50L2.pdf?ci_sign=585782a79e3d37974bcfba11f733e4bddedca203
IXTA15N50L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH15N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D33E4DE449B820&compId=IXTA(H%2CP)15N50L2.pdf?ci_sign=585782a79e3d37974bcfba11f733e4bddedca203
IXTH15N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.73 EUR
9+8.21 EUR
30+8.15 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXTP15N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D33E4DE449B820&compId=IXTA(H%2CP)15N50L2.pdf?ci_sign=585782a79e3d37974bcfba11f733e4bddedca203
IXTP15N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.68 EUR
9+8.08 EUR
10+7.64 EUR
Mindestbestellmenge: 7
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IX4426MTR pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c
IX4426MTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...30V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Operating temperature: -40...125°C
Case: DFN8
Produkt ist nicht verfügbar
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IXFH100N25P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC009820&compId=IXFH100N25P.pdf?ci_sign=8543bb8bfc45a45bf095f4e45a85eebb13fb2f81
IXFH100N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 100A; 600W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 250V
Drain current: 100A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Gate charge: 185nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFH100N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBCDA1FA5458BF&compId=IXF_100N30X3_HV.pdf?ci_sign=291cad4ee4c338832090f6d9d224fee09028d26c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFH100N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 48W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 130ns
Drain-source voltage: 300V
Drain current: 100A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 48W
Polarisation: unipolar
Gate charge: 122nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.34 EUR
6+12.74 EUR
Mindestbestellmenge: 5
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IXTK100N25P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90F1896B593E27&compId=IXTK100N25P-DTE.pdf?ci_sign=ca4a750df92eea9f262967bae79b2712e1f8dcc2
IXTK100N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Mounting: THT
Gate charge: 185nC
Technology: PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 100A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Kind of package: tube
Produkt ist nicht verfügbar
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IXXH100N60C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB4E5B26A23820&compId=IXXH100N60C3.pdf?ci_sign=d34a8167233d2e352f733d1eb503fd101039fa57
IXXH100N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 830W
Turn-off time: 0.22µs
Turn-on time: 95s
Kind of package: tube
Case: TO247-3
Pulsed collector current: 380A
Collector current: 100A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Gate charge: 150nC
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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IXTP260N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAF933DD53820&compId=IXTA(P)260N055T2.pdf?ci_sign=7d74893cde6dc5f8997d0fa7ff9adc13d7fa48f1
IXTP260N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Power dissipation: 480W
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
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IXFK48N60P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A94E9FB88C78BF&compId=IXF_48N60P.pdf?ci_sign=2d8decaa7bf5853333c30536e1424c18bf5cd01b
IXFK48N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXGA48N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE53B33B1DDB820&compId=IXGA(P%2CH)48N60A3.pdf?ci_sign=3de66c7eadd74b16b8875cd3a050200178617cff
IXGA48N60A3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Technology: GenX3™; PT
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.13 EUR
13+5.52 EUR
16+4.55 EUR
17+4.3 EUR
Mindestbestellmenge: 12
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IXGH48N60B3C1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B381E6C0878A5E28&compId=IXGH48N60B3C1-DTE.pdf?ci_sign=721837839cfff5b1fb45e8394d3190c2f5f5cb01
IXGH48N60B3C1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 48ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.49 EUR
Mindestbestellmenge: 4
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IXGH48N60B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BF95DB9A0A17820&compId=IXGH48N60B3D1.pdf?ci_sign=b88ef15e046b033bedf0667f01dda5696c066ffb
IXGH48N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 44ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
auf Bestellung 303 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.91 EUR
9+7.98 EUR
10+7.55 EUR
30+7.54 EUR
Mindestbestellmenge: 8
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IXGH48N60C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA3ABB7C7C7820&compId=IXGH48N60C3D1.pdf?ci_sign=9e8b41e0496f7b4552d6efd4bbf0620554365264
IXGH48N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 187ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 250A
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.23 EUR
9+8.32 EUR
10+7.86 EUR
30+7.58 EUR
120+7.56 EUR
Mindestbestellmenge: 6
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CPC1117N pVersion=0046&contRep=ZT&docId=005056AB82531EE995A38CFB799FD8BF&compId=cpc1117n.pdf?ci_sign=42c5ed3862d631ccfa4f4ee18df640d714bcd8ff
CPC1117N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
55+1.3 EUR
59+1.23 EUR
Mindestbestellmenge: 44
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MMO62-12IO6 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B8F478DC2F5F9E28&compId=MMo62-12io6-DTE.pdf?ci_sign=10ad4c18982c2d0b7cdd649068aaadc5dde3b16c
MMO62-12IO6
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V
Case: SOT227B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.29V
Load current: 30A
Semiconductor structure: opposing
Gate current: 100mA
Max. forward impulse current: 0.4kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+30.97 EUR
Mindestbestellmenge: 3
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DSP8-12A pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF09019D31818BF&compId=DSP8-12A.pdf?ci_sign=4c1df90e7f9f491684d5e61712aacbe284a80828
DSP8-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Power dissipation: 100W
Kind of package: tube
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.78 EUR
25+2.87 EUR
35+2.07 EUR
37+1.96 EUR
100+1.87 EUR
Mindestbestellmenge: 19
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DSP8-12AS-TRL pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4740C124560C4&compId=DSP8-12AS.pdf?ci_sign=c7e88fe8621910a4bd9800ab0ed9988bac77f308
DSP8-12AS-TRL
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
Kind of package: reel; tape
auf Bestellung 792 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.78 EUR
22+3.36 EUR
24+3.02 EUR
26+2.85 EUR
100+2.82 EUR
Mindestbestellmenge: 19
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DSP8-12AS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4740C124560C4&compId=DSP8-12AS.pdf?ci_sign=c7e88fe8621910a4bd9800ab0ed9988bac77f308
DSP8-12AS-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Produkt ist nicht verfügbar
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CPC1945Y pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4384923AE38BF&compId=CPC1945Y.pdf?ci_sign=a1bb4db4c3f93e15666e949682f73ba24088c71a
CPC1945Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
On-state resistance: 0.34Ω
Turn-on time: 5ms
Turn-off time: 3ms
Body dimensions: 19.2x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 120V AC
Control current max.: 100mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: SIP4
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.7 EUR
29+2.55 EUR
30+2.42 EUR
75+2.32 EUR
Mindestbestellmenge: 20
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IXFH24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91
IXFH24N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91
IXFK24N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK27N80Q pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd
IXFK27N80Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK34N80 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5531C0BEB820&compId=IXFK(X)34N80.pdf?ci_sign=c21449cd8db7a186cc87835ff14b3420826840c0
IXFK34N80
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK44N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55A88536A9820&compId=IXFK(X)44N80P.pdf?ci_sign=fe7a22c35d7909b220aeebf7fe0c0b6a1d419d2d
IXFK44N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.66 EUR
10+18.9 EUR
Mindestbestellmenge: 4
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IXFK44N80Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D555DA4D32F820&compId=IXFK(X)44N80Q3.pdf?ci_sign=dd049728423ed64df76c419a8fd12eba8ab2dd10
IXFK44N80Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MXHV9910B pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561
MXHV9910B
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: tube
Produkt ist nicht verfügbar
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MXHV9910BE pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: tube
Produkt ist nicht verfügbar
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MXHV9910BETR pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MXHV9910BTR pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561
MXHV9910BTR
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IXTA08N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389DDEB1D445820&compId=IXTA(P%2CY)08N50D2.pdf?ci_sign=d92cfc0f9209a370f1a625c4b843304b6b0d742c
IXTA08N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXTP08N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389DDEB1D445820&compId=IXTA(P%2CY)08N50D2.pdf?ci_sign=d92cfc0f9209a370f1a625c4b843304b6b0d742c
IXTP08N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.59 EUR
35+2.07 EUR
37+1.96 EUR
100+1.92 EUR
Mindestbestellmenge: 20
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IXTY08N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389DDEB1D445820&compId=IXTA(P%2CY)08N50D2.pdf?ci_sign=d92cfc0f9209a370f1a625c4b843304b6b0d742c
IXTY08N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Produkt ist nicht verfügbar
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IXYH75N120B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 24ns
Gate charge: 157nC
Turn-off time: 235ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 1.15kW
Collector-emitter voltage: 1.2kV
Technology: GenX4™; XPT™
Type of transistor: IGBT
Case: TO247; TO247-3
Produkt ist nicht verfügbar
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CPC2025N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8BD80C7&compId=CPC2025N.pdf?ci_sign=68e0652c8b9ad4e6df71484331099d8df430468c
CPC2025N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Turn-off time: 1ms
Turn-on time: 2ms
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 30Ω
Case: SO8
Insulation voltage: 1.5kV
Mounting: SMT
Kind of output: MOSFET
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
40+1.82 EUR
42+1.72 EUR
Mindestbestellmenge: 35
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CPC2025NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8BD80C7&compId=CPC2025N.pdf?ci_sign=68e0652c8b9ad4e6df71484331099d8df430468c
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Turn-off time: 1ms
Turn-on time: 2ms
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 30Ω
Case: SO8
Insulation voltage: 1.5kV
Mounting: SMT
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXKC15N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
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CLA100PD1200NA Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969
CLA100PD1200NA
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Case: SOT227B
Max. off-state voltage: 1.2kV
Max. load current: 150A
Max. forward voltage: 1.21V
Load current: 100A
Semiconductor structure: double series
Gate current: 40/80mA
Max. forward impulse current: 1.5kA
Threshold on-voltage: 0.83V
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+36.99 EUR
3+34.98 EUR
Mindestbestellmenge: 2
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IXA20PG1200DHGLB pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA72D372C388143&compId=IXA20PG1200DHGLB.pdf?ci_sign=92f5d9e5dd1ef2369a8aa01671aa29244ac7835a pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA7B6B514524143&compId=SMPD%20MOSFET%20and%20IGBTs_Product%20Brief.pdf?ci_sign=8939cb3b27982fb8078171d673d8402b08fb3dc3
IXA20PG1200DHGLB
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Power dissipation: 130W
Electrical mounting: SMT
Technology: ISOPLUS™; Sonic FRD™
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: SMPD-B
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.13 EUR
7+10.64 EUR
10+10.3 EUR
Mindestbestellmenge: 6
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IXA30RG1200DHGLB pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA759B209DC6143&compId=IXA30RG1200DHGLB.pdf?ci_sign=f6eb0238051d648061ebca520c13ec7c26cb22f3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA7B6B514524143&compId=SMPD%20MOSFET%20and%20IGBTs_Product%20Brief.pdf?ci_sign=8939cb3b27982fb8078171d673d8402b08fb3dc3
IXA30RG1200DHGLB
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Power dissipation: 147W
Technology: ISOPLUS™; Sonic FRD™
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.59 EUR
Mindestbestellmenge: 10
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IXFH70N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh70n65x3-datasheet?assetguid=b5819e4b-925f-4a8e-b528-ff8e8c93904b
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 110A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 165ns
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IXFN170N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C956F78DF18BF&compId=IXFN170N65X2.pdf?ci_sign=e4ca9b77a78619ba688f7d6c410bc4fd14cd2866
IXFN170N65X2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 13mΩ
Gate charge: 434nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 270ns
Produkt ist nicht verfügbar
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CPC1135N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20E20C7&compId=CPC1135N.pdf?ci_sign=4a18a2dbc91e1ae370bd5a8a3cd54dcab1a8fe21
CPC1135N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
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