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IXFP24N60X IXFP24N60X IXYS IXFA(H,P,Q)24N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO220AB; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
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CPC1004N CPC1004N IXYS CPC1004N.pdf Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Operating temperature: -40...110°C
Case: SOP4
On-state resistance: 4Ω
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 300mA
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
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35+2.06 EUR
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IXTH16N10D2 IXTH16N10D2 IXYS IXTH(T)16N10D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO247-3; 940ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 64mΩ
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 940ns
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IXTX600N04T2 IXTX600N04T2 IXYS IXTK(X)600N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; PLUS247™; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.25kW
Case: PLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 40V
On-state resistance: 1.5mΩ
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 590nC
Drain current: 600A
Reverse recovery time: 100ns
Kind of channel: enhancement
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IXTX60N50L2 IXTX60N50L2 IXYS IXTK(X)60N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 500V
On-state resistance: 0.1Ω
Features of semiconductor devices: linear power mosfet
Gate charge: 610nC
Drain current: 60A
Reverse recovery time: 980ns
Kind of channel: enhancement
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IXTH24N50L IXTH24N50L IXYS IXTH24N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXFL44N100P IXFL44N100P IXYS IXFL44N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 357W
Case: ISOPLUS264™
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 305nC
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IXFY4N60P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_4n60p3_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 4A; Idm: 8A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 114W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
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DSA320A100NB DSA320A100NB IXYS Category: Diode modules
Description: Module: diode; quadruple,common anode; 100V; 80Ax4; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 100V
Max. forward voltage: 0.77V
Load current: 80A x4
Semiconductor structure: common anode; quadruple
Type of module: diode
Features of semiconductor devices: Schottky
Case: SOT227B
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IXFK80N60P3 IXFK80N60P3 IXYS IXFK(X)80N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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IXFN80N60P3 IXFN80N60P3 IXYS IXFN80N60P3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Mechanical mounting: screw
Type of module: MOSFET transistor
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IXFR80N60P3 IXFR80N60P3 IXYS IXFR80N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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IXFX80N60P3 IXFX80N60P3 IXYS IXFK(X)80N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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CPC1014N CPC1014N IXYS cpc1014n.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Manufacturer series: OptoMOS
On-state resistance: 2Ω
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.4A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: SOP4
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CPC1016N CPC1016N IXYS CPC1016N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Manufacturer series: OptoMOS
On-state resistance: 16Ω
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: SOP4
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CPC1018N CPC1018N IXYS cpc1018n.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Manufacturer series: OptoMOS
On-state resistance: 0.8Ω
Turn-on time: 3ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.6A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: SOP4
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CPC1018NTR CPC1018NTR IXYS CPC1018N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V DC; max. 600V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.8Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 2ms
Kind of output: MOSFET
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CPC1019N CPC1019N IXYS CPC1019N.pdf Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Manufacturer series: OptoMOS
On-state resistance: 0.6Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 750mA
Type of relay: solid state
Switched voltage: max. 60V DC
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: SOP4
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IXFA12N65X2 IXFA12N65X2 IXYS IXF_12N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
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IXFP12N65X2 IXFP12N65X2 IXYS IXF_12N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
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IXFP12N65X2M IXFP12N65X2M IXYS IXFP12N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
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IXTA12N65X2 IXTA12N65X2 IXYS IXT_12N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Features of semiconductor devices: ultra junction x-class
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IXTH12N65X2 IXTH12N65X2 IXYS IXT_12N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Gate charge: 17.7nC
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IXTP12N65X2 IXTP12N65X2 IXYS IXT_12N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Features of semiconductor devices: ultra junction x-class
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IXTP12N65X2M IXTP12N65X2M IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17.7nC
Pulsed drain current: 24A
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IXXP12N65B4D1 IXXP12N65B4D1 IXYS IXXP12N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 70A
Turn-on time: 44ns
Turn-off time: 245ns
Gate charge: 34nC
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IXFA30N60X IXFA30N60X IXYS IXFA(P)30N60X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO263; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO263
On-state resistance: 155mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Reverse recovery time: 145ns
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IXFH30N60P IXFH30N60P IXYS IXFH(T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Gate charge: 82nC
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IXFH30N60X IXFH30N60X IXYS IXFH(T,Q)30N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Reverse recovery time: 145ns
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IXFP30N60X IXFP30N60X IXYS IXFA(P)30N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO220AB
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Reverse recovery time: 145ns
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IXFR30N60P IXFR30N60P IXYS IXFR30N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 166W
Gate charge: 85nC
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IXKH30N60C5 IXKH30N60C5 IXYS IXKH30N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 310W
Features of semiconductor devices: super junction coolmos
Gate charge: 53nC
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IXTH30N60L2 IXTH30N60L2 IXYS IXT_30N60L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
Reverse recovery time: 710ns
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MIXA60HU1200VA IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Power dissipation: 290W
Case: V1-A-Pack
Pulsed collector current: 150A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: boost chopper; buck chopper; H-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 60A
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IXFA18N60X IXFA18N60X IXYS IXFA(H,P)18N60X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
auf Bestellung 73 Stücke:
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IXFH18N60P IXFH18N60P IXYS IXFH18N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 282 Stücke:
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IXFH18N60X IXFH18N60X IXYS IXFA(H,P)18N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO247-3; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
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IXFP18N60X IXFP18N60X IXYS IXFA(H,P)18N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO220AB; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
auf Bestellung 38 Stücke:
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IXTQ18N60P IXTQ18N60P IXYS IXTQ18N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO3P
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 49nC
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
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IXBH10N170 IXBH10N170 IXYS IXBH(T)10N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 63ns
Turn-off time: 1.8µs
Type of transistor: IGBT
Power dissipation: 140W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 30nC
Technology: BiMOSFET™
Case: TO247-3
auf Bestellung 27 Stücke:
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IXBH10N300HV IXBH10N300HV IXYS IXBA(H)10N300HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 88A
Turn-on time: 805ns
Turn-off time: 2.13µs
Type of transistor: IGBT
Power dissipation: 180W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 46nC
Technology: BiMOSFET™
Case: TO247HV
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IXGH72N60C3 IXGH72N60C3 IXYS IXGH72N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
Produkt ist nicht verfügbar
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IXGN72N60C3H1 IXGN72N60C3H1 IXYS IXGN72N60C3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 52A
Pulsed collector current: 360A
Power dissipation: 360W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Produkt ist nicht verfügbar
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IXGK72N60B3H1 IXGK72N60B3H1 IXYS IXGK(X)72N60B3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
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IXGR72N60B3H1 IXGR72N60B3H1 IXYS IXGR72N60B3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 40A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
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IXFA16N50P IXFA16N50P IXYS IXF_16N50P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.4Ω
Power dissipation: 300W
Gate charge: 43nC
Technology: HiPerFET™; Polar™
Case: TO263
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IXFA16N50P3 IXFA16N50P3 IXYS IXF_16N50P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.36Ω
Power dissipation: 330W
Gate charge: 29nC
Technology: HiPerFET™; Polar3™
Gate-source voltage: ±30V
Case: TO263
auf Bestellung 33 Stücke:
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IXFH16N50P IXFH16N50P IXYS IXF_16N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.4Ω
Power dissipation: 300W
Gate charge: 36nC
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Case: TO247-3
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IXFH16N50P3 IXFH16N50P3 IXYS IXF_16N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.36Ω
Power dissipation: 330W
Gate charge: 29nC
Technology: HiPerFET™; Polar3™
Gate-source voltage: ±30V
Case: TO247-3
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IXFP16N50P IXFP16N50P IXYS IXF_16N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.4Ω
Power dissipation: 300W
Gate charge: 43nC
Case: TO220AB
auf Bestellung 298 Stücke:
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IXFP16N50P3 IXFP16N50P3 IXYS IXF_16N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB
Reverse recovery time: 250ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.36Ω
Type of transistor: N-MOSFET
Power dissipation: 330W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; Polar3™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO220AB
auf Bestellung 223 Stücke:
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IXTA16N50P IXTA16N50P IXYS IXTP16N50P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.4Ω
Power dissipation: 300W
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Case: TO263
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IXTH16N50D2 IXTH16N50D2 IXYS IXTH(T)16N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.3Ω
Power dissipation: 695W
Case: TO247-3
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IXTP16N50P IXTP16N50P IXYS IXTP16N50P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.4Ω
Power dissipation: 300W
Gate charge: 43nC
Technology: PolarHT™
Gate-source voltage: ±30V
Case: TO220AB
auf Bestellung 230 Stücke:
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IXDD609PI IXDD609PI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 389 Stücke:
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50+1.46 EUR
53+1.37 EUR
250+1.34 EUR
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IXFB52N90P IXFB52N90P IXYS IXFB52N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: PLUS264™
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 52A
On-state resistance: 0.16Ω
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IXFK32N90P IXFK32N90P IXYS IXFK(X)32N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
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IXFN52N90P IXFN52N90P IXYS IXFN52N90P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±40V
Pulsed drain current: 104A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 43A
On-state resistance: 0.16Ω
Produkt ist nicht verfügbar
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IXFX32N90P IXFX32N90P IXYS IXFK(X)32N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhancement
Mounting: THT
Case: PLUS247™
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
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IXGR32N90B2D1 IXGR32N90B2D1 IXYS IXGR32N90B2D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Type of transistor: IGBT
Technology: HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 22A
Power dissipation: 160W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 42ns
Turn-off time: 690ns
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IXFP24N60X IXFA(H,P,Q)24N60X.pdf
IXFP24N60X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO220AB; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Produkt ist nicht verfügbar
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CPC1004N CPC1004N.pdf
CPC1004N
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Operating temperature: -40...110°C
Case: SOP4
On-state resistance: 4Ω
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 300mA
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
auf Bestellung 205 Stücke:
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Anzahl Preis
28+2.57 EUR
35+2.06 EUR
46+1.56 EUR
49+1.49 EUR
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IXTH16N10D2 IXTH(T)16N10D2.pdf
IXTH16N10D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO247-3; 940ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 64mΩ
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 940ns
auf Bestellung 1 Stücke:
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Anzahl Preis
1+71.50 EUR
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IXTX600N04T2 IXTK(X)600N04T2.pdf
IXTX600N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; PLUS247™; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.25kW
Case: PLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 40V
On-state resistance: 1.5mΩ
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 590nC
Drain current: 600A
Reverse recovery time: 100ns
Kind of channel: enhancement
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IXTX60N50L2 IXTK(X)60N50L2.pdf
IXTX60N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 500V
On-state resistance: 0.1Ω
Features of semiconductor devices: linear power mosfet
Gate charge: 610nC
Drain current: 60A
Reverse recovery time: 980ns
Kind of channel: enhancement
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IXTH24N50L IXTH24N50L.pdf
IXTH24N50L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXFL44N100P IXFL44N100P.pdf
IXFL44N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 357W
Case: ISOPLUS264™
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 305nC
auf Bestellung 22 Stücke:
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Anzahl Preis
5+15.72 EUR
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IXFY4N60P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_4n60p3_datasheet.pdf.pdf
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 4A; Idm: 8A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 114W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
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DSA320A100NB
DSA320A100NB
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; quadruple,common anode; 100V; 80Ax4; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 100V
Max. forward voltage: 0.77V
Load current: 80A x4
Semiconductor structure: common anode; quadruple
Type of module: diode
Features of semiconductor devices: Schottky
Case: SOT227B
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.98 EUR
Mindestbestellmenge: 3
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IXFK80N60P3 IXFK(X)80N60P3.pdf
IXFK80N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+23.22 EUR
5+15.76 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFN80N60P3 IXFN80N60P3.pdf
IXFN80N60P3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
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IXFR80N60P3 IXFR80N60P3.pdf
IXFR80N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFX80N60P3 IXFK(X)80N60P3.pdf
IXFX80N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC1014N cpc1014n.pdf
CPC1014N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Manufacturer series: OptoMOS
On-state resistance: 2Ω
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.4A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: SOP4
auf Bestellung 910 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.93 EUR
53+1.36 EUR
56+1.29 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
CPC1016N CPC1016N.pdf
CPC1016N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Manufacturer series: OptoMOS
On-state resistance: 16Ω
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: SOP4
auf Bestellung 837 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.79 EUR
53+1.36 EUR
56+1.29 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
CPC1018N cpc1018n.pdf
CPC1018N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Manufacturer series: OptoMOS
On-state resistance: 0.8Ω
Turn-on time: 3ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.6A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: SOP4
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
34+2.16 EUR
35+2.04 EUR
50+1.97 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
CPC1018NTR CPC1018N.pdf
CPC1018NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V DC; max. 600V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.8Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 2ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC1019N CPC1019N.pdf
CPC1019N
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Manufacturer series: OptoMOS
On-state resistance: 0.6Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 750mA
Type of relay: solid state
Switched voltage: max. 60V DC
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: SOP4
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
41+1.77 EUR
43+1.67 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IXFA12N65X2 IXF_12N65X2.pdf
IXFA12N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Produkt ist nicht verfügbar
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IXFP12N65X2 IXF_12N65X2.pdf
IXFP12N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.26 EUR
25+2.97 EUR
26+2.80 EUR
100+2.77 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXFP12N65X2M IXFP12N65X2M.pdf
IXFP12N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Produkt ist nicht verfügbar
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IXTA12N65X2 IXT_12N65X2.pdf
IXTA12N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH12N65X2 IXT_12N65X2.pdf
IXTH12N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Gate charge: 17.7nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP12N65X2 IXT_12N65X2.pdf
IXTP12N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP12N65X2M littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTP12N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17.7nC
Pulsed drain current: 24A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXXP12N65B4D1 IXXP12N65B4D1.pdf
IXXP12N65B4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 70A
Turn-on time: 44ns
Turn-off time: 245ns
Gate charge: 34nC
Produkt ist nicht verfügbar
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IXFA30N60X IXFA(P)30N60X.pdf
IXFA30N60X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO263; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO263
On-state resistance: 155mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Reverse recovery time: 145ns
Produkt ist nicht verfügbar
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IXFH30N60P IXFH(T,V)30N60P_S.pdf
IXFH30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Gate charge: 82nC
Produkt ist nicht verfügbar
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IXFH30N60X IXFH(T,Q)30N60X.pdf
IXFH30N60X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Reverse recovery time: 145ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFP30N60X IXFA(P)30N60X.pdf
IXFP30N60X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO220AB
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Reverse recovery time: 145ns
Produkt ist nicht verfügbar
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IXFR30N60P IXFR30N60P.pdf
IXFR30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 166W
Gate charge: 85nC
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.03 EUR
7+10.94 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXKH30N60C5 IXKH30N60C5.pdf
IXKH30N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 310W
Features of semiconductor devices: super junction coolmos
Gate charge: 53nC
Produkt ist nicht verfügbar
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IXTH30N60L2 IXT_30N60L2.pdf
IXTH30N60L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
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MIXA60HU1200VA
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Power dissipation: 290W
Case: V1-A-Pack
Pulsed collector current: 150A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: boost chopper; buck chopper; H-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 60A
Produkt ist nicht verfügbar
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IXFA18N60X IXFA(H,P)18N60X.pdf
IXFA18N60X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.60 EUR
21+3.45 EUR
22+3.29 EUR
50+3.16 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXFH18N60P IXFH18N60P.pdf
IXFH18N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.01 EUR
14+5.12 EUR
15+4.83 EUR
30+4.65 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFH18N60X IXFA(H,P)18N60X.pdf
IXFH18N60X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO247-3; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXFP18N60X IXFA(H,P)18N60X.pdf
IXFP18N60X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO220AB; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.42 EUR
22+3.27 EUR
23+3.15 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ18N60P IXTQ18N60P.pdf
IXTQ18N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO3P
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 49nC
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXBH10N170 IXBH(T)10N170.pdf
IXBH10N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 63ns
Turn-off time: 1.8µs
Type of transistor: IGBT
Power dissipation: 140W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 30nC
Technology: BiMOSFET™
Case: TO247-3
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.43 EUR
7+10.74 EUR
8+10.15 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXBH10N300HV IXBA(H)10N300HV.pdf
IXBH10N300HV
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 88A
Turn-on time: 805ns
Turn-off time: 2.13µs
Type of transistor: IGBT
Power dissipation: 180W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 46nC
Technology: BiMOSFET™
Case: TO247HV
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+82.67 EUR
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IXGH72N60C3 IXGH72N60C3.pdf
IXGH72N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
Produkt ist nicht verfügbar
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IXGN72N60C3H1 IXGN72N60C3H1.pdf
IXGN72N60C3H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 52A
Pulsed collector current: 360A
Power dissipation: 360W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Produkt ist nicht verfügbar
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IXGK72N60B3H1 IXGK(X)72N60B3H1.pdf
IXGK72N60B3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
Produkt ist nicht verfügbar
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IXGR72N60B3H1 IXGR72N60B3H1.pdf
IXGR72N60B3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 40A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
Produkt ist nicht verfügbar
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IXFA16N50P IXF_16N50P.pdf
IXFA16N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.4Ω
Power dissipation: 300W
Gate charge: 43nC
Technology: HiPerFET™; Polar™
Case: TO263
Produkt ist nicht verfügbar
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IXFA16N50P3 IXF_16N50P3.pdf
IXFA16N50P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.36Ω
Power dissipation: 330W
Gate charge: 29nC
Technology: HiPerFET™; Polar3™
Gate-source voltage: ±30V
Case: TO263
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.45 EUR
15+4.90 EUR
19+3.90 EUR
20+3.69 EUR
Mindestbestellmenge: 14
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IXFH16N50P IXF_16N50P.pdf
IXFH16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.4Ω
Power dissipation: 300W
Gate charge: 36nC
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Case: TO247-3
Produkt ist nicht verfügbar
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IXFH16N50P3 IXF_16N50P3.pdf
IXFH16N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.36Ω
Power dissipation: 330W
Gate charge: 29nC
Technology: HiPerFET™; Polar3™
Gate-source voltage: ±30V
Case: TO247-3
Produkt ist nicht verfügbar
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IXFP16N50P IXF_16N50P.pdf
IXFP16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.4Ω
Power dissipation: 300W
Gate charge: 43nC
Case: TO220AB
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.00 EUR
16+4.49 EUR
20+3.58 EUR
22+3.39 EUR
Mindestbestellmenge: 15
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IXFP16N50P3 IXF_16N50P3.pdf
IXFP16N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB
Reverse recovery time: 250ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.36Ω
Type of transistor: N-MOSFET
Power dissipation: 330W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; Polar3™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO220AB
auf Bestellung 223 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.11 EUR
18+4.08 EUR
19+3.85 EUR
Mindestbestellmenge: 12
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IXTA16N50P IXTP16N50P-DTE.pdf
IXTA16N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.4Ω
Power dissipation: 300W
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Case: TO263
Produkt ist nicht verfügbar
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IXTH16N50D2 IXTH(T)16N50D2.pdf
IXTH16N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.3Ω
Power dissipation: 695W
Case: TO247-3
Produkt ist nicht verfügbar
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IXTP16N50P IXTP16N50P-DTE.pdf
IXTP16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.4Ω
Power dissipation: 300W
Gate charge: 43nC
Technology: PolarHT™
Gate-source voltage: ±30V
Case: TO220AB
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.46 EUR
21+3.42 EUR
23+3.23 EUR
Mindestbestellmenge: 14
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IXDD609PI IXDD609CI.pdf
IXDD609PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.47 EUR
33+2.22 EUR
50+1.46 EUR
53+1.37 EUR
250+1.34 EUR
Mindestbestellmenge: 21
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IXFB52N90P IXFB52N90P.pdf
IXFB52N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: PLUS264™
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 52A
On-state resistance: 0.16Ω
Produkt ist nicht verfügbar
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IXFK32N90P IXFK(X)32N90P.pdf
IXFK32N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
Produkt ist nicht verfügbar
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IXFN52N90P IXFN52N90P.pdf
IXFN52N90P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±40V
Pulsed drain current: 104A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 43A
On-state resistance: 0.16Ω
Produkt ist nicht verfügbar
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IXFX32N90P IXFK(X)32N90P.pdf
IXFX32N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhancement
Mounting: THT
Case: PLUS247™
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
Produkt ist nicht verfügbar
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IXGR32N90B2D1 IXGR32N90B2D1.pdf
IXGR32N90B2D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Type of transistor: IGBT
Technology: HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 22A
Power dissipation: 160W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 42ns
Turn-off time: 690ns
Produkt ist nicht verfügbar
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