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IXGX120N60A3 IXGX120N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB7481B6FA7820&compId=IXGX120N60A3.pdf?ci_sign=7c6c1f981d719adcb00100c5b7522dd0575ab8b6 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 120A; 780W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 780W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 450nC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 830ns
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IXFK250N10P IXFK250N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB36DB3D55820&compId=IXFK(X)250N10P.pdf?ci_sign=8ea7e81bf2d9e3c41b4632496dce0444a2a01043 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; TO264
Drain-source voltage: 100V
Drain current: 250A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 205nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
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3+23.91 EUR
4+22.59 EUR
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IXFH24N90P IXFH24N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A91EFCA0BC18BF&compId=IXF_24N90P.pdf?ci_sign=ded22da81efa882da3bdd9c405eb3c907c0bbe1a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 24A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 24A
Case: TO247-3
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 660W
Gate charge: 130nC
auf Bestellung 290 Stücke:
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6+13.16 EUR
10+12.64 EUR
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IXFR24N90P IXFR24N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BA3820&compId=IXFR24N90P.pdf?ci_sign=febc9fbf8a1d0a0967afdd75b7308ccc013f92ca Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; 230W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Case: ISOPLUS247™
On-state resistance: 0.46Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 230W
Gate charge: 130nC
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IXFT24N90P IXFT24N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A91EFCA0BC18BF&compId=IXF_24N90P.pdf?ci_sign=ded22da81efa882da3bdd9c405eb3c907c0bbe1a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 24A; 660W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 24A
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Power dissipation: 660W
Gate charge: 130nC
Technology: HiPerFET™; Polar™
auf Bestellung 251 Stücke:
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6+14.24 EUR
120+13.70 EUR
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IXYH24N90C3 IXYH24N90C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA92C1B3741820&compId=IXYH24N90C3.pdf?ci_sign=a3210f329aa58bbd5bf982e341cb338473fca19c Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 240W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 240W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
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IXYH24N90C3D1 IXYH24N90C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA97DAECAD7820&compId=IXYH24N90C3D1.pdf?ci_sign=ca29c942f115c50325f8dbffd194b5d9e5781706 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
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IXGH40N120A2 IXGH40N120A2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACDC24CE18D820&compId=IXGH(T)40N120A2.pdf?ci_sign=203d3ce5808c7efb2301acda4bb7953fc1c64a9b Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3
Type of transistor: IGBT
Power dissipation: 360W
Case: TO247-3
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Technology: PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 55ns
Turn-off time: 2.3µs
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IXGH40N120B2D1 IXGH40N120B2D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACE7B86DFC1820&compId=IXGH40N120B2D1.pdf?ci_sign=f69cd0ee46700a68335dcbe7633483cd24211c52 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 200A
Turn-on time: 79ns
Turn-off time: 770ns
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IXGH40N120C3 IXGH40N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACF007F4611820&compId=IXGH40N120C3.pdf?ci_sign=714914cb8f64354bd66f866a923e86117151cff6 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 200A
Turn-on time: 52ns
Turn-off time: 475ns
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IXGH40N120C3D1 IXGH40N120C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACF2BC4DE99820&compId=IXGH40N120C3D1.pdf?ci_sign=9086ec5b6a009987b2652c18dc4656beb34eaf8b Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 180A
Turn-on time: 52ns
Turn-off time: 475ns
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IXYH40N120B3 IXYH40N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F15467A0893820&compId=IXYH40N120B3.pdf?ci_sign=eaed52837b02635a2925168fde86e30166533444 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Power dissipation: 577W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 200A
Turn-on time: 84ns
Turn-off time: 411ns
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IXYH40N120B3D1 IXYH40N120B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1507CF8D1F820&compId=IXYH40N120B3D1.pdf?ci_sign=d60e3ab08bf49be7d3dfc3b325aefe29f3f2b44d Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 180A
Turn-on time: 84ns
Turn-off time: 411ns
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IXYH40N120C3 IXYH40N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD0BA43A8E1820&compId=IXYH40N120C3.pdf?ci_sign=d79e6ffef17f7d8267b0b10291f7f554f8589b2f Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Power dissipation: 577W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 175A
Turn-on time: 95ns
Turn-off time: 303ns
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IXYH40N120C3D1 IXYH40N120C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD0DE5CF7D5820&compId=IXYH40N120C3D1.pdf?ci_sign=883141e607d231e491ef121948348a81288777e2 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 95ns
Turn-off time: 303ns
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IXFH12N90P IXFH12N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28565D40F6B3820&compId=IXFH(V)12N90P_S.pdf?ci_sign=6423cc2416d7c4bd0c10fe3e39ba843736b680a7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 380W
Polarisation: unipolar
Kind of package: tube
Gate charge: 56nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Drain-source voltage: 900V
Drain current: 12A
On-state resistance: 1Ω
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IXTA20N65X IXTA20N65X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD2A7F09703820&compId=IXTA(H%2CP)20N65X.pdf?ci_sign=4952fc09840b76b0ed77995751d2310b9fd86f2c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.35µs
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
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IXTA20N65X2 IXTA20N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 27nC
Pulsed drain current: 22A
auf Bestellung 22 Stücke:
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12+6.45 EUR
13+5.81 EUR
16+4.65 EUR
17+4.39 EUR
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IXTH20N65X IXTH20N65X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD2A7F09703820&compId=IXTA(H%2CP)20N65X.pdf?ci_sign=4952fc09840b76b0ed77995751d2310b9fd86f2c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.35µs
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
auf Bestellung 254 Stücke:
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7+10.40 EUR
10+7.28 EUR
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IXTH20N65X2 IXTH20N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28496EC34885820&compId=IXTA(H%2CP)20N65X2.pdf?ci_sign=16011adda623c5560128f4bf46728ed354eb2f2f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.35µs
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
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IXTP20N65X IXTP20N65X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD2A7F09703820&compId=IXTA(H%2CP)20N65X.pdf?ci_sign=4952fc09840b76b0ed77995751d2310b9fd86f2c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.35µs
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
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IXTP20N65X2 IXTP20N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28496EC34885820&compId=IXTA(H%2CP)20N65X2.pdf?ci_sign=16011adda623c5560128f4bf46728ed354eb2f2f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.35µs
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
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IXYH50N65C3H1 IXYH50N65C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA99F6C3E755820&compId=IXYH50N65C3H1.pdf?ci_sign=d53f80509943cae4d1d9116fefa0a0b17aaabe3b Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 142ns
auf Bestellung 170 Stücke:
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6+13.07 EUR
8+9.40 EUR
9+8.88 EUR
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IXFH15N100P IXFH15N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC0CF820&compId=IXFH15N100P.pdf?ci_sign=94fa2e42718d2c8307aa8b264bf50b1dc784944c Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
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5+15.07 EUR
7+10.80 EUR
8+10.21 EUR
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IXFH15N100Q3 IXFH15N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECE0AF857958BF&compId=IXF_15N100Q3.pdf?ci_sign=1dd331295c1d7ea0154eeba2040fc94c4aba0ac2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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IXFR15N100Q3 IXFR15N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6ADD820&compId=IXFR15N100Q3.pdf?ci_sign=1631e85c6cd029ee05ddbc6ee962f904f9e0e8af Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 400W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 400W
Case: ISOPLUS247™
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
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4+19.75 EUR
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IXFA7N80P IXFA7N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBCFAAAAC138BF&compId=IXFA7N80P_IXFP7N80P.pdf?ci_sign=6abb9f9c357a935dbd0c4341d202268591747dda Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
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IXFP7N80P IXFP7N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBCFAAAAC138BF&compId=IXFA7N80P_IXFP7N80P.pdf?ci_sign=6abb9f9c357a935dbd0c4341d202268591747dda Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
auf Bestellung 29 Stücke:
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22+3.27 EUR
29+2.46 EUR
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IXTQ460P2 IXTQ460P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0B0D5903E469&compId=IXTQ460P2.pdf?ci_sign=66ba757660ab9fc6f012f9df9c2561c23345b3f6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Gate charge: 48nC
Technology: Polar2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO3P
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 24A
auf Bestellung 175 Stücke:
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10+7.75 EUR
14+5.32 EUR
15+5.03 EUR
120+4.83 EUR
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CPC1907B CPC1907B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F1A40C7&compId=CPC1907B.pdf?ci_sign=7769020ed6db2920200c882d1751093685dc103a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 6000mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 6A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Kind of output: MOSFET
Turn-off time: 1ms
Turn-on time: 5ms
On-state resistance: 60mΩ
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
auf Bestellung 76 Stücke:
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7+11.20 EUR
14+5.35 EUR
15+5.05 EUR
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IXFA24N60X IXFA24N60X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCC6B1B94E3820&compId=IXFA(H%2CP%2CQ)24N60X.pdf?ci_sign=fad810321484d2e57c7f5777ead2ee8525f48c2f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO263
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
auf Bestellung 14 Stücke:
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11+7.05 EUR
12+6.35 EUR
14+5.11 EUR
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IXFP24N60X IXFP24N60X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCC6B1B94E3820&compId=IXFA(H%2CP%2CQ)24N60X.pdf?ci_sign=fad810321484d2e57c7f5777ead2ee8525f48c2f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO220AB; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Produkt ist nicht verfügbar
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CPC1004N CPC1004N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42900C7&compId=CPC1004N.pdf?ci_sign=c2ff74f63a010424db623c4e5b6a3f4c09119d56 Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Case: SOP4
On-state resistance: 4Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 300mA
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...110°C
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
auf Bestellung 705 Stücke:
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27+2.73 EUR
33+2.19 EUR
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IXTH16N10D2 IXTH16N10D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D34AD59A155820&compId=IXTH(T)16N10D2.pdf?ci_sign=75a0ea05d6af26676ff9c6e7db44e6130fed3d9a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO247-3; 940ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 64mΩ
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 940ns
auf Bestellung 1 Stücke:
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1+71.50 EUR
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IXTX600N04T2 IXTX600N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49FEAF5633820&compId=IXTK(X)600N04T2.pdf?ci_sign=31b642072eb49cef1a86e3e7413c5068bef4c432 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; PLUS247™; 100ns
Reverse recovery time: 100ns
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 590nC
Kind of channel: enhancement
Mounting: THT
Case: PLUS247™
Produkt ist nicht verfügbar
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IXTX60N50L2 IXTX60N50L2 IXYS IXTK(X)60N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 500V
On-state resistance: 0.1Ω
Features of semiconductor devices: linear power mosfet
Gate charge: 610nC
Drain current: 60A
Reverse recovery time: 980ns
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTH24N50L IXTH24N50L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91825820&compId=IXTH24N50L.pdf?ci_sign=65ce4971a8a2ba17892d822e535deeccc62d7f59 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXFL44N100P IXFL44N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F95474BA39820&compId=IXFL44N100P.pdf?ci_sign=1c0e50a44c3371ebd3290c5eb1e4bc6fd4bc0c39 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 357W
Case: ISOPLUS264™
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 305nC
auf Bestellung 22 Stücke:
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5+15.67 EUR
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IXFY4N60P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_4n60p3_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 4A; Idm: 8A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 114W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
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DSA320A100NB DSA320A100NB IXYS Category: Diode modules
Description: Module: diode; quadruple,common anode; 100V; 80Ax4; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 100V
Max. forward voltage: 0.77V
Load current: 80A x4
Semiconductor structure: common anode; quadruple
Features of semiconductor devices: Schottky
Type of semiconductor module: diode
Case: SOT227B
auf Bestellung 3 Stücke:
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3+24.98 EUR
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IXFK80N60P3 IXFK80N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D3F18CAC491820&compId=IXFK(X)80N60P3.pdf?ci_sign=4323adc90294e70e31e6954053047cba50e6737f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 19 Stücke:
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4+23.22 EUR
5+15.74 EUR
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IXFN80N60P3 IXFN80N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9D7CE511A5820&compId=IXFN80N60P3.pdf?ci_sign=8a40d9f6e2d287d4560f0df449c58f73299f151f Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 250ns
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IXFR80N60P3 IXFR80N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC627820&compId=IXFR80N60P3.pdf?ci_sign=e9b78ec09cf4552bf5bec18d9057ce9ca0bd8ebd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX80N60P3 IXFX80N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D3F18CAC491820&compId=IXFK(X)80N60P3.pdf?ci_sign=4323adc90294e70e31e6954053047cba50e6737f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CPC1014N CPC1014N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9959065A1EB89F8BF&compId=cpc1014n.pdf?ci_sign=3aeb85f392fc7ce08ea820927771a3e31cc27ea4 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Case: SOP4
On-state resistance: 2Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.4A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
auf Bestellung 850 Stücke:
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24+3.06 EUR
51+1.42 EUR
54+1.34 EUR
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CPC1016N CPC1016N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75420C7&compId=CPC1016N.pdf?ci_sign=476036b92a73b73fde3c51ebae6dcbccaa47872a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Case: SOP4
On-state resistance: 16Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
auf Bestellung 837 Stücke:
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25+2.90 EUR
51+1.42 EUR
54+1.34 EUR
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CPC1018N CPC1018N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99590996ED3DAD8BF&compId=cpc1018n.pdf?ci_sign=b28f2894dbd3b0fd09841f0116736c4ef6be12f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.8Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 2ms
Kind of output: MOSFET
auf Bestellung 274 Stücke:
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22+3.27 EUR
29+2.49 EUR
31+2.35 EUR
50+2.26 EUR
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CPC1018NTR CPC1018NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A756C0C7&compId=CPC1018N.pdf?ci_sign=8de638cd4dfb67d338b1795a33a1de15a2c8f02d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V DC; max. 600V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.8Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 2ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1019N CPC1019N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75800C7&compId=CPC1019N.pdf?ci_sign=1456f68612229fb12531626e0e32c9f25964cac3 Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Insulation voltage: 1.5kV
Kind of output: MOSFET
Case: SOP4
Mounting: SMT
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Max. operating current: 750mA
Type of relay: solid state
Switched voltage: max. 60V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.6Ω
Turn-on time: 3ms
auf Bestellung 148 Stücke:
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27+2.67 EUR
39+1.84 EUR
41+1.74 EUR
Mindestbestellmenge: 27
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IXFA12N65X2 IXFA12N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99097C8FFDBA138BF&compId=IXF_12N65X2.pdf?ci_sign=ce18cc3b712789b5603f50a0d9269fb42c4ab943 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Produkt ist nicht verfügbar
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IXFP12N65X2 IXFP12N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99097C8FFDBA138BF&compId=IXF_12N65X2.pdf?ci_sign=ce18cc3b712789b5603f50a0d9269fb42c4ab943 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.26 EUR
24+2.99 EUR
26+2.82 EUR
100+2.77 EUR
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IXFP12N65X2M IXFP12N65X2M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99097D0E76B22B8BF&compId=IXFP12N65X2M.pdf?ci_sign=4004da86a326be7c04a430838db3746583c9ea73 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Produkt ist nicht verfügbar
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IXTA12N65X2 IXTA12N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BAF2E1F5D438BF&compId=IXT_12N65X2.pdf?ci_sign=ecd37ed45b6873bd45211c34fc6849d39cb58295 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXTH12N65X2 IXTH12N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BAF2E1F5D438BF&compId=IXT_12N65X2.pdf?ci_sign=ecd37ed45b6873bd45211c34fc6849d39cb58295 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Gate charge: 17.7nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP12N65X2 IXTP12N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BAF2E1F5D438BF&compId=IXT_12N65X2.pdf?ci_sign=ecd37ed45b6873bd45211c34fc6849d39cb58295 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXTP12N65X2M IXTP12N65X2M IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17.7nC
Pulsed drain current: 24A
Produkt ist nicht verfügbar
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IXXP12N65B4D1 IXXP12N65B4D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE458FEB7591820&compId=IXXP12N65B4D1.pdf?ci_sign=249f71380b36ecccc89266db49385297cce44081 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 70A
Turn-on time: 44ns
Turn-off time: 245ns
Gate charge: 34nC
Produkt ist nicht verfügbar
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IXFA30N60X IXFA30N60X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC33AE48335820&compId=IXFA(P)30N60X.pdf?ci_sign=3f4e92311c2721a4ac346223cdc73b4815585cbc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO263; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO263
On-state resistance: 155mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Reverse recovery time: 145ns
Produkt ist nicht verfügbar
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IXFH30N60P IXFH30N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDB792F4701820&compId=IXFH(T%2CV)30N60P_S.pdf?ci_sign=f243b293ca1ba8eeb06cd56dcbf7608293a703c8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Gate charge: 82nC
Produkt ist nicht verfügbar
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IXFH30N60X IXFH30N60X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC2EDA71CB1820&compId=IXFH(T%2CQ)30N60X.pdf?ci_sign=f033c4069747bb2681467501c6f8cd2cd9c6c934 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Reverse recovery time: 145ns
Produkt ist nicht verfügbar
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IXGX120N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB7481B6FA7820&compId=IXGX120N60A3.pdf?ci_sign=7c6c1f981d719adcb00100c5b7522dd0575ab8b6
IXGX120N60A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 120A; 780W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 780W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 450nC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 830ns
Produkt ist nicht verfügbar
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IXFK250N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB36DB3D55820&compId=IXFK(X)250N10P.pdf?ci_sign=8ea7e81bf2d9e3c41b4632496dce0444a2a01043
IXFK250N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; TO264
Drain-source voltage: 100V
Drain current: 250A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 205nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.91 EUR
4+22.59 EUR
Mindestbestellmenge: 3
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IXFH24N90P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A91EFCA0BC18BF&compId=IXF_24N90P.pdf?ci_sign=ded22da81efa882da3bdd9c405eb3c907c0bbe1a
IXFH24N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 24A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 24A
Case: TO247-3
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 660W
Gate charge: 130nC
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.16 EUR
10+12.64 EUR
Mindestbestellmenge: 6
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IXFR24N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BA3820&compId=IXFR24N90P.pdf?ci_sign=febc9fbf8a1d0a0967afdd75b7308ccc013f92ca
IXFR24N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; 230W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Case: ISOPLUS247™
On-state resistance: 0.46Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 230W
Gate charge: 130nC
Produkt ist nicht verfügbar
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IXFT24N90P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A91EFCA0BC18BF&compId=IXF_24N90P.pdf?ci_sign=ded22da81efa882da3bdd9c405eb3c907c0bbe1a
IXFT24N90P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 24A; 660W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 24A
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Power dissipation: 660W
Gate charge: 130nC
Technology: HiPerFET™; Polar™
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.06 EUR
6+14.24 EUR
120+13.70 EUR
Mindestbestellmenge: 5
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IXYH24N90C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA92C1B3741820&compId=IXYH24N90C3.pdf?ci_sign=a3210f329aa58bbd5bf982e341cb338473fca19c
IXYH24N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 240W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 240W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Produkt ist nicht verfügbar
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IXYH24N90C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA97DAECAD7820&compId=IXYH24N90C3D1.pdf?ci_sign=ca29c942f115c50325f8dbffd194b5d9e5781706
IXYH24N90C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Produkt ist nicht verfügbar
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IXGH40N120A2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACDC24CE18D820&compId=IXGH(T)40N120A2.pdf?ci_sign=203d3ce5808c7efb2301acda4bb7953fc1c64a9b
IXGH40N120A2
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3
Type of transistor: IGBT
Power dissipation: 360W
Case: TO247-3
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Technology: PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 55ns
Turn-off time: 2.3µs
Produkt ist nicht verfügbar
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IXGH40N120B2D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACE7B86DFC1820&compId=IXGH40N120B2D1.pdf?ci_sign=f69cd0ee46700a68335dcbe7633483cd24211c52
IXGH40N120B2D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 200A
Turn-on time: 79ns
Turn-off time: 770ns
Produkt ist nicht verfügbar
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IXGH40N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACF007F4611820&compId=IXGH40N120C3.pdf?ci_sign=714914cb8f64354bd66f866a923e86117151cff6
IXGH40N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 200A
Turn-on time: 52ns
Turn-off time: 475ns
Produkt ist nicht verfügbar
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IXGH40N120C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACF2BC4DE99820&compId=IXGH40N120C3D1.pdf?ci_sign=9086ec5b6a009987b2652c18dc4656beb34eaf8b
IXGH40N120C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 180A
Turn-on time: 52ns
Turn-off time: 475ns
Produkt ist nicht verfügbar
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IXYH40N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F15467A0893820&compId=IXYH40N120B3.pdf?ci_sign=eaed52837b02635a2925168fde86e30166533444
IXYH40N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Power dissipation: 577W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 200A
Turn-on time: 84ns
Turn-off time: 411ns
Produkt ist nicht verfügbar
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IXYH40N120B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1507CF8D1F820&compId=IXYH40N120B3D1.pdf?ci_sign=d60e3ab08bf49be7d3dfc3b325aefe29f3f2b44d
IXYH40N120B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 180A
Turn-on time: 84ns
Turn-off time: 411ns
Produkt ist nicht verfügbar
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IXYH40N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD0BA43A8E1820&compId=IXYH40N120C3.pdf?ci_sign=d79e6ffef17f7d8267b0b10291f7f554f8589b2f
IXYH40N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Power dissipation: 577W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 175A
Turn-on time: 95ns
Turn-off time: 303ns
Produkt ist nicht verfügbar
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IXYH40N120C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD0DE5CF7D5820&compId=IXYH40N120C3D1.pdf?ci_sign=883141e607d231e491ef121948348a81288777e2
IXYH40N120C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 95ns
Turn-off time: 303ns
Produkt ist nicht verfügbar
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IXFH12N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28565D40F6B3820&compId=IXFH(V)12N90P_S.pdf?ci_sign=6423cc2416d7c4bd0c10fe3e39ba843736b680a7
IXFH12N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 380W
Polarisation: unipolar
Kind of package: tube
Gate charge: 56nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Drain-source voltage: 900V
Drain current: 12A
On-state resistance: 1Ω
Produkt ist nicht verfügbar
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IXTA20N65X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD2A7F09703820&compId=IXTA(H%2CP)20N65X.pdf?ci_sign=4952fc09840b76b0ed77995751d2310b9fd86f2c
IXTA20N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.35µs
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Produkt ist nicht verfügbar
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IXTA20N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x2_datasheet.pdf.pdf
IXTA20N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 27nC
Pulsed drain current: 22A
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.45 EUR
13+5.81 EUR
16+4.65 EUR
17+4.39 EUR
Mindestbestellmenge: 12
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IXTH20N65X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD2A7F09703820&compId=IXTA(H%2CP)20N65X.pdf?ci_sign=4952fc09840b76b0ed77995751d2310b9fd86f2c
IXTH20N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.35µs
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
auf Bestellung 254 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.40 EUR
10+7.28 EUR
Mindestbestellmenge: 7
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IXTH20N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28496EC34885820&compId=IXTA(H%2CP)20N65X2.pdf?ci_sign=16011adda623c5560128f4bf46728ed354eb2f2f
IXTH20N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.35µs
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
Produkt ist nicht verfügbar
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IXTP20N65X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD2A7F09703820&compId=IXTA(H%2CP)20N65X.pdf?ci_sign=4952fc09840b76b0ed77995751d2310b9fd86f2c
IXTP20N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.35µs
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Produkt ist nicht verfügbar
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IXTP20N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28496EC34885820&compId=IXTA(H%2CP)20N65X2.pdf?ci_sign=16011adda623c5560128f4bf46728ed354eb2f2f
IXTP20N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.35µs
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH50N65C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA99F6C3E755820&compId=IXYH50N65C3H1.pdf?ci_sign=d53f80509943cae4d1d9116fefa0a0b17aaabe3b
IXYH50N65C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 142ns
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.07 EUR
8+9.40 EUR
9+8.88 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFH15N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC0CF820&compId=IXFH15N100P.pdf?ci_sign=94fa2e42718d2c8307aa8b264bf50b1dc784944c
IXFH15N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.07 EUR
7+10.80 EUR
8+10.21 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFH15N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECE0AF857958BF&compId=IXF_15N100Q3.pdf?ci_sign=1dd331295c1d7ea0154eeba2040fc94c4aba0ac2
IXFH15N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR15N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6ADD820&compId=IXFR15N100Q3.pdf?ci_sign=1631e85c6cd029ee05ddbc6ee962f904f9e0e8af
IXFR15N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 400W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 400W
Case: ISOPLUS247™
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.75 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFA7N80P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBCFAAAAC138BF&compId=IXFA7N80P_IXFP7N80P.pdf?ci_sign=6abb9f9c357a935dbd0c4341d202268591747dda
IXFA7N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFP7N80P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBCFAAAAC138BF&compId=IXFA7N80P_IXFP7N80P.pdf?ci_sign=6abb9f9c357a935dbd0c4341d202268591747dda
IXFP7N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.27 EUR
29+2.46 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ460P2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0B0D5903E469&compId=IXTQ460P2.pdf?ci_sign=66ba757660ab9fc6f012f9df9c2561c23345b3f6
IXTQ460P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Gate charge: 48nC
Technology: Polar2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO3P
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 24A
auf Bestellung 175 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.75 EUR
14+5.32 EUR
15+5.03 EUR
120+4.83 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
CPC1907B pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F1A40C7&compId=CPC1907B.pdf?ci_sign=7769020ed6db2920200c882d1751093685dc103a
CPC1907B
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 6000mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 6A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Kind of output: MOSFET
Turn-off time: 1ms
Turn-on time: 5ms
On-state resistance: 60mΩ
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.20 EUR
14+5.35 EUR
15+5.05 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFA24N60X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCC6B1B94E3820&compId=IXFA(H%2CP%2CQ)24N60X.pdf?ci_sign=fad810321484d2e57c7f5777ead2ee8525f48c2f
IXFA24N60X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO263
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.05 EUR
12+6.35 EUR
14+5.11 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXFP24N60X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCC6B1B94E3820&compId=IXFA(H%2CP%2CQ)24N60X.pdf?ci_sign=fad810321484d2e57c7f5777ead2ee8525f48c2f
IXFP24N60X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO220AB; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC1004N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42900C7&compId=CPC1004N.pdf?ci_sign=c2ff74f63a010424db623c4e5b6a3f4c09119d56
CPC1004N
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Case: SOP4
On-state resistance: 4Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 300mA
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...110°C
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
auf Bestellung 705 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.73 EUR
33+2.19 EUR
44+1.66 EUR
46+1.57 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IXTH16N10D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D34AD59A155820&compId=IXTH(T)16N10D2.pdf?ci_sign=75a0ea05d6af26676ff9c6e7db44e6130fed3d9a
IXTH16N10D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO247-3; 940ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 64mΩ
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 940ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTX600N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49FEAF5633820&compId=IXTK(X)600N04T2.pdf?ci_sign=31b642072eb49cef1a86e3e7413c5068bef4c432
IXTX600N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; PLUS247™; 100ns
Reverse recovery time: 100ns
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 590nC
Kind of channel: enhancement
Mounting: THT
Case: PLUS247™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTX60N50L2 IXTK(X)60N50L2.pdf
IXTX60N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 500V
On-state resistance: 0.1Ω
Features of semiconductor devices: linear power mosfet
Gate charge: 610nC
Drain current: 60A
Reverse recovery time: 980ns
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH24N50L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91825820&compId=IXTH24N50L.pdf?ci_sign=65ce4971a8a2ba17892d822e535deeccc62d7f59
IXTH24N50L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFL44N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F95474BA39820&compId=IXFL44N100P.pdf?ci_sign=1c0e50a44c3371ebd3290c5eb1e4bc6fd4bc0c39
IXFL44N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 357W
Case: ISOPLUS264™
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 305nC
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.67 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFY4N60P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_4n60p3_datasheet.pdf.pdf
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 4A; Idm: 8A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 114W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSA320A100NB
DSA320A100NB
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; quadruple,common anode; 100V; 80Ax4; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 100V
Max. forward voltage: 0.77V
Load current: 80A x4
Semiconductor structure: common anode; quadruple
Features of semiconductor devices: Schottky
Type of semiconductor module: diode
Case: SOT227B
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.98 EUR
Mindestbestellmenge: 3
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IXFK80N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D3F18CAC491820&compId=IXFK(X)80N60P3.pdf?ci_sign=4323adc90294e70e31e6954053047cba50e6737f
IXFK80N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+23.22 EUR
5+15.74 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFN80N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9D7CE511A5820&compId=IXFN80N60P3.pdf?ci_sign=8a40d9f6e2d287d4560f0df449c58f73299f151f
IXFN80N60P3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR80N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC627820&compId=IXFR80N60P3.pdf?ci_sign=e9b78ec09cf4552bf5bec18d9057ce9ca0bd8ebd
IXFR80N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFX80N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D3F18CAC491820&compId=IXFK(X)80N60P3.pdf?ci_sign=4323adc90294e70e31e6954053047cba50e6737f
IXFX80N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC1014N pVersion=0046&contRep=ZT&docId=005056AB82531EE9959065A1EB89F8BF&compId=cpc1014n.pdf?ci_sign=3aeb85f392fc7ce08ea820927771a3e31cc27ea4
CPC1014N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Case: SOP4
On-state resistance: 2Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.4A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.06 EUR
51+1.42 EUR
54+1.34 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
CPC1016N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75420C7&compId=CPC1016N.pdf?ci_sign=476036b92a73b73fde3c51ebae6dcbccaa47872a
CPC1016N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Case: SOP4
On-state resistance: 16Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
auf Bestellung 837 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.90 EUR
51+1.42 EUR
54+1.34 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
CPC1018N pVersion=0046&contRep=ZT&docId=005056AB82531EE99590996ED3DAD8BF&compId=cpc1018n.pdf?ci_sign=b28f2894dbd3b0fd09841f0116736c4ef6be12f5
CPC1018N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.8Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 2ms
Kind of output: MOSFET
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.27 EUR
29+2.49 EUR
31+2.35 EUR
50+2.26 EUR
Mindestbestellmenge: 22
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CPC1018NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A756C0C7&compId=CPC1018N.pdf?ci_sign=8de638cd4dfb67d338b1795a33a1de15a2c8f02d
CPC1018NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V DC; max. 600V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.8Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 2ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1019N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75800C7&compId=CPC1019N.pdf?ci_sign=1456f68612229fb12531626e0e32c9f25964cac3
CPC1019N
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Insulation voltage: 1.5kV
Kind of output: MOSFET
Case: SOP4
Mounting: SMT
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Max. operating current: 750mA
Type of relay: solid state
Switched voltage: max. 60V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.6Ω
Turn-on time: 3ms
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.67 EUR
39+1.84 EUR
41+1.74 EUR
Mindestbestellmenge: 27
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IXFA12N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE99097C8FFDBA138BF&compId=IXF_12N65X2.pdf?ci_sign=ce18cc3b712789b5603f50a0d9269fb42c4ab943
IXFA12N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Produkt ist nicht verfügbar
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IXFP12N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE99097C8FFDBA138BF&compId=IXF_12N65X2.pdf?ci_sign=ce18cc3b712789b5603f50a0d9269fb42c4ab943
IXFP12N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.26 EUR
24+2.99 EUR
26+2.82 EUR
100+2.77 EUR
Mindestbestellmenge: 14
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IXFP12N65X2M pVersion=0046&contRep=ZT&docId=005056AB82531EE99097D0E76B22B8BF&compId=IXFP12N65X2M.pdf?ci_sign=4004da86a326be7c04a430838db3746583c9ea73
IXFP12N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Produkt ist nicht verfügbar
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IXTA12N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BAF2E1F5D438BF&compId=IXT_12N65X2.pdf?ci_sign=ecd37ed45b6873bd45211c34fc6849d39cb58295
IXTA12N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXTH12N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BAF2E1F5D438BF&compId=IXT_12N65X2.pdf?ci_sign=ecd37ed45b6873bd45211c34fc6849d39cb58295
IXTH12N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Gate charge: 17.7nC
Produkt ist nicht verfügbar
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IXTP12N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BAF2E1F5D438BF&compId=IXT_12N65X2.pdf?ci_sign=ecd37ed45b6873bd45211c34fc6849d39cb58295
IXTP12N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXTP12N65X2M littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTP12N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17.7nC
Pulsed drain current: 24A
Produkt ist nicht verfügbar
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IXXP12N65B4D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE458FEB7591820&compId=IXXP12N65B4D1.pdf?ci_sign=249f71380b36ecccc89266db49385297cce44081
IXXP12N65B4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 70A
Turn-on time: 44ns
Turn-off time: 245ns
Gate charge: 34nC
Produkt ist nicht verfügbar
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IXFA30N60X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC33AE48335820&compId=IXFA(P)30N60X.pdf?ci_sign=3f4e92311c2721a4ac346223cdc73b4815585cbc
IXFA30N60X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO263; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO263
On-state resistance: 155mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Reverse recovery time: 145ns
Produkt ist nicht verfügbar
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IXFH30N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDB792F4701820&compId=IXFH(T%2CV)30N60P_S.pdf?ci_sign=f243b293ca1ba8eeb06cd56dcbf7608293a703c8
IXFH30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Gate charge: 82nC
Produkt ist nicht verfügbar
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IXFH30N60X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC2EDA71CB1820&compId=IXFH(T%2CQ)30N60X.pdf?ci_sign=f033c4069747bb2681467501c6f8cd2cd9c6c934
IXFH30N60X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Reverse recovery time: 145ns
Produkt ist nicht verfügbar
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