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IXXX160N65B4 IXXX160N65B4 IXYS IXXK(x)160N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Power dissipation: 940W
Case: PLUS247™
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Pulsed collector current: 860A
Collector current: 160A
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Turn-on time: 93ns
Gate-emitter voltage: ±20V
Turn-off time: 380ns
Produkt ist nicht verfügbar
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IXXX160N65C4 IXYS littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Power dissipation: 940W
Case: PLUS247™
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Pulsed collector current: 320A
Collector current: 160A
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Turn-on time: 52ns
Gate-emitter voltage: ±20V
Turn-off time: 197ns
Produkt ist nicht verfügbar
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DSEC16-06A DSEC16-06A IXYS media?resourcetype=datasheets&itemid=508d2251-0e5c-48cf-8629-cef1a4793aa5&filename=Littelfuse-Power-Semiconductors-DSEC16-06A-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Max. forward impulse current: 50A
Power dissipation: 60W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 30ns
auf Bestellung 69 Stücke:
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23+3.13 EUR
26+2.85 EUR
32+2.30 EUR
33+2.17 EUR
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DSEC16-06AC DSEC16-06AC IXYS media?resourcetype=datasheets&itemid=727180e8-2052-4708-a088-44156766e2f7&filename=Littelfuse-Power-Semiconductors-DSEC16-06AC-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Max. forward impulse current: 50A
Power dissipation: 60W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Case: ISOPLUS220™
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 30ns
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IXTA160N04T2 IXTA160N04T2 IXYS IXTA(P)160N04T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
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IXTP160N04T2 IXTP160N04T2 IXYS IXTA(P)160N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
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IXFH46N65X2 IXFH46N65X2 IXYS IXFH46N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 263 Stücke:
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9+8.08 EUR
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IXFA220N06T3 IXFA220N06T3 IXYS IXxx220N06T3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
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IXFH220N06T3 IXFH220N06T3 IXYS IXxx220N06T3-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
auf Bestellung 4 Stücke:
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IXFP220N06T3 IXFP220N06T3 IXYS IXxx220N06T3-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO220AB; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
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CPC1150N CPC1150N IXYS CPC1150N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 2ms
Turn-on time: 1ms
On-state resistance: 50Ω
Contacts configuration: SPST-NC
Manufacturer series: OptoMOS
auf Bestellung 361 Stücke:
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PD2401 PD2401 IXYS PD2401.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Mounting: THT
Operating temperature: -40...85°C
Case: DIP4
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
auf Bestellung 194 Stücke:
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9+8.25 EUR
12+6.25 EUR
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IXFH14N80P IXFH14N80P IXYS IXFH(Q,T)14N80P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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IXFT14N80P IXFT14N80P IXYS IXFH(Q,T)14N80P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTP80N10T IXTP80N10T IXYS IXTA(P)80N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Drain-source voltage: 100V
Drain current: 80A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 14mΩ
Power dissipation: 230W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 60nC
Kind of channel: enhancement
Mounting: THT
Reverse recovery time: 100ns
Type of transistor: N-MOSFET
auf Bestellung 137 Stücke:
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19+3.92 EUR
27+2.67 EUR
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IXFA180N10T2 IXFA180N10T2 IXYS IXFA(P)180N10T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Drain-source voltage: 100V
Drain current: 180A
Case: TO263
Polarisation: unipolar
On-state resistance: 6mΩ
Power dissipation: 480W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 185nC
Kind of channel: enhancement
Mounting: SMD
Reverse recovery time: 66ns
Type of transistor: N-MOSFET
auf Bestellung 185 Stücke:
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10+7.32 EUR
13+5.51 EUR
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IXFP180N10T2 IXFP180N10T2 IXYS IXFA(P)180N10T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Drain-source voltage: 100V
Drain current: 180A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 6mΩ
Power dissipation: 480W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 185nC
Kind of channel: enhancement
Mounting: THT
Reverse recovery time: 66ns
Type of transistor: N-MOSFET
auf Bestellung 236 Stücke:
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11+6.81 EUR
12+6.02 EUR
14+5.12 EUR
50+5.03 EUR
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IXTA180N10T IXTA180N10T IXYS IXTA(P)180N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Drain-source voltage: 100V
Drain current: 180A
Case: TO263
Polarisation: unipolar
On-state resistance: 6.4mΩ
Power dissipation: 480W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 151nC
Kind of channel: enhancement
Mounting: SMD
Reverse recovery time: 72ns
Type of transistor: N-MOSFET
auf Bestellung 298 Stücke:
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10+7.38 EUR
16+4.50 EUR
100+4.33 EUR
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IXYH75N65C3 IXYH75N65C3 IXYS IXYH75N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
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IXYH75N65C3H1 IXYH75N65C3H1 IXYS IXYH75N65C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 750W
Gate charge: 123nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Turn-on time: 90ns
Turn-off time: 179ns
Produkt ist nicht verfügbar
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IXYN75N65C3D1 IXYN75N65C3D1 IXYS IXYN75N65C3D1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Case: SOT227B
Power dissipation: 600W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 650V
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Produkt ist nicht verfügbar
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IXFP34N65X2 IXFP34N65X2 IXYS IXF_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
Produkt ist nicht verfügbar
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CPC1106N CPC1106N IXYS CPC1106N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Turn-on time: 10ms
Turn-off time: 10ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NC
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: SOP4
auf Bestellung 3604 Stücke:
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42+1.73 EUR
45+1.62 EUR
58+1.24 EUR
61+1.17 EUR
100+1.13 EUR
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CPC1106NTR CPC1106NTR IXYS CPC1106N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 10ms
Turn-on time: 10ms
On-state resistance: 10Ω
Contacts configuration: SPST-NC
Manufacturer series: OptoMOS
auf Bestellung 1605 Stücke:
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42+1.72 EUR
46+1.59 EUR
58+1.24 EUR
61+1.17 EUR
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IXGT72N60A3 IXGT72N60A3 IXYS IXG_72N60A3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO268
Type of transistor: IGBT
Power dissipation: 540W
Case: TO268
Mounting: SMD
Gate charge: 230nC
Kind of package: tube
Turn-off time: 885ns
Technology: GenX3™
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 72A
Pulsed collector current: 400A
Turn-on time: 61ns
auf Bestellung 23 Stücke:
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5+14.80 EUR
7+10.57 EUR
8+10.00 EUR
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IXGH72N60A3 IXGH72N60A3 IXYS IXG_72N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Power dissipation: 540W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-off time: 885ns
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 72A
Pulsed collector current: 400A
Turn-on time: 61ns
auf Bestellung 252 Stücke:
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6+13.24 EUR
9+8.18 EUR
10+7.74 EUR
120+7.68 EUR
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DSEI30-06A DSEI30-06A IXYS DSEI30-06A.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 37A; tube; Ifsm: 300A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 37A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 205 Stücke:
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13+5.85 EUR
14+5.26 EUR
18+4.19 EUR
19+3.96 EUR
120+3.90 EUR
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IXFA22N60P3 IXFA22N60P3 IXYS IXFA(H,P,Q)22N60P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 296 Stücke:
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12+6.28 EUR
13+5.65 EUR
16+4.65 EUR
17+4.39 EUR
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IXFH22N60P IXFH22N60P IXYS IXFH22N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 43 Stücke:
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9+8.85 EUR
11+6.68 EUR
30+6.56 EUR
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IXFH22N60P3 IXFH22N60P3 IXYS IXFA(H,P,Q)22N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 599 Stücke:
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10+7.34 EUR
14+5.12 EUR
15+4.83 EUR
270+4.78 EUR
300+4.65 EUR
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IXFP22N60P3 IXFP22N60P3 IXYS IXFA(H,P,Q)22N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 161 Stücke:
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11+6.62 EUR
18+4.00 EUR
19+3.79 EUR
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DSA120X200LB-TUB DSA120X200LB-TUB IXYS DSA120X200LB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; tube; 185W
Case: SMPD
Max. off-state voltage: 200V
Max. forward voltage: 0.67V
Load current: 65A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
Power dissipation: 185W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: SMD
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IXKH35N60C5 IXKH35N60C5 IXYS IXKH35N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; 357W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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IXKN75N60C IXKN75N60C IXYS IXKN75N60C-DTE.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 50A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 36mΩ
Pulsed drain current: 250A
Power dissipation: 560W
Technology: CoolMOS™
Gate-source voltage: ±20V
Mechanical mounting: screw
Reverse recovery time: 580ns
Gate charge: 500nC
Kind of channel: enhancement
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IXXH75N60C3 IXXH75N60C3 IXYS IXXH75N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-off time: 165ns
Gate-emitter voltage: ±20V
Turn-on time: 105ns
Pulsed collector current: 300A
Collector current: 75A
Collector-emitter voltage: 600V
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IXXH75N60C3D1 IXXH75N60C3D1 IXYS IXXH75N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-off time: 185ns
Gate-emitter voltage: ±20V
Turn-on time: 105ns
Pulsed collector current: 300A
Collector current: 75A
Collector-emitter voltage: 600V
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CPC1301GR CPC1301GR IXYS CPC1301GR.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; SO4
Case: SO4
Number of channels: 1
Mounting: SMD
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-8000%@1mA
Type of optocoupler: optocoupler
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IXFN120N65X2 IXFN120N65X2 IXYS IXFN120N65X2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 108A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 24mΩ
Pulsed drain current: 240A
Power dissipation: 890W
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 220ns
Gate charge: 240nC
Kind of channel: enhancement
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IXFN26N120P IXFN26N120P IXYS IXFN26N120P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.5Ω
Pulsed drain current: 60A
Power dissipation: 695W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 255nC
Kind of channel: enhancement
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IXFH30N50P IXFH30N50P IXYS IXFH30N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; PolarHV™
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IXFH30N50Q3 IXFH30N50Q3 IXYS IXFH30N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Technology: HiPerFET™
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IXFT30N50P IXFT30N50P IXYS IXFH30N50P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT30N50Q3 IXFT30N50Q3 IXYS IXFH30N50Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTQ30N50L IXTQ30N50L IXYS IXTH(Q,T)30N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTQ30N50L2 IXTQ30N50L2 IXYS IXTH(Q,T)30N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTQ30N50P IXTQ30N50P IXYS IXTH(Q,T,V)30N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTT30N50L IXTT30N50L IXYS IXTH(Q,T)30N50L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTT30N50L2 IXTT30N50L2 IXYS IXTH(Q,T)30N50L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTT30N50P IXTT30N50P IXYS IXTH(Q,T,V)30N50P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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CPC1114N CPC1114N IXYS CPC1114N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 2ms
On-state resistance: 2Ω
Contacts configuration: SPST-NC
Manufacturer series: OptoMOS
auf Bestellung 608 Stücke:
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IXTK210P10T IXTK210P10T IXYS IXTK210P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: TO264
Mounting: THT
Kind of package: tube
Reverse recovery time: 200ns
Drain-source voltage: -100V
Drain current: -210A
On-state resistance: 7.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 740nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
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IXFH150N20T IXFH150N20T IXYS IXFH(T)150N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
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IXTA76N25T IXTA76N25T IXYS IXTA(H,I,P,Q)76N25T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 148ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA76P10T IXTA76P10T IXYS IXT_76P10T_HV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
auf Bestellung 137 Stücke:
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DSIK45-16AR DSIK45-16AR IXYS media?resourcetype=datasheets&itemid=d16330bf-b369-4dea-afcc-53e43f988a0d&filename=Littelfuse-Power-Semiconductors-DSIK45-16AR-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45Ax2; tube; Ifsm: 480A; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.26V
Load current: 45A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.48kA
Power dissipation: 165W
Type of diode: rectifying
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IXTP450P2 IXTP450P2 IXYS IXTH(P,Q)450P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Reverse recovery time: 400ns
auf Bestellung 186 Stücke:
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MEE250-12DA MEE250-12DA IXYS PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Case: Y4-M6
Max. off-state voltage: 1.2kV
Load current: 260A
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. forward voltage: 1.54V
Semiconductor structure: double series
Produkt ist nicht verfügbar
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IXFN110N85X IXFN110N85X IXYS IXFN110N85X.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 220A
Power dissipation: 1170W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 205ns
Gate charge: 425nC
Kind of channel: enhancement
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IXFN150N65X2 IXFN150N65X2 IXYS IXFN150N65X2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 145A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 17mΩ
Pulsed drain current: 300A
Power dissipation: 1.04kW
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 190ns
Gate charge: 355nC
Kind of channel: enhancement
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IXFN180N15P IXFN180N15P IXYS IXFN180N15P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 150A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 11mΩ
Pulsed drain current: 380A
Power dissipation: 680W
Technology: HiPerFET™; PolarHT™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 240nC
Kind of channel: enhancement
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IXXX160N65B4 IXXK(x)160N65B4.pdf
IXXX160N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Power dissipation: 940W
Case: PLUS247™
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Pulsed collector current: 860A
Collector current: 160A
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Turn-on time: 93ns
Gate-emitter voltage: ±20V
Turn-off time: 380ns
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IXXX160N65C4 littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Power dissipation: 940W
Case: PLUS247™
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Pulsed collector current: 320A
Collector current: 160A
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Turn-on time: 52ns
Gate-emitter voltage: ±20V
Turn-off time: 197ns
Produkt ist nicht verfügbar
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DSEC16-06A media?resourcetype=datasheets&itemid=508d2251-0e5c-48cf-8629-cef1a4793aa5&filename=Littelfuse-Power-Semiconductors-DSEC16-06A-Datasheet
DSEC16-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Max. forward impulse current: 50A
Power dissipation: 60W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 30ns
auf Bestellung 69 Stücke:
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Anzahl Preis
23+3.13 EUR
26+2.85 EUR
32+2.30 EUR
33+2.17 EUR
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DSEC16-06AC media?resourcetype=datasheets&itemid=727180e8-2052-4708-a088-44156766e2f7&filename=Littelfuse-Power-Semiconductors-DSEC16-06AC-Datasheet
DSEC16-06AC
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Max. forward impulse current: 50A
Power dissipation: 60W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Case: ISOPLUS220™
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 30ns
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IXTA160N04T2 IXTA(P)160N04T2.pdf
IXTA160N04T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
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IXTP160N04T2 IXTA(P)160N04T2.pdf
IXTP160N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
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IXFH46N65X2 IXFH46N65X2.pdf
IXFH46N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 263 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.93 EUR
9+8.08 EUR
Mindestbestellmenge: 6
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IXFA220N06T3 IXxx220N06T3-DTE.pdf
IXFA220N06T3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Produkt ist nicht verfügbar
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IXFH220N06T3 IXxx220N06T3-DTE.pdf
IXFH220N06T3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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IXFP220N06T3 IXxx220N06T3-DTE.pdf
IXFP220N06T3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO220AB; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
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CPC1150N CPC1150N.pdf
CPC1150N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 2ms
Turn-on time: 1ms
On-state resistance: 50Ω
Contacts configuration: SPST-NC
Manufacturer series: OptoMOS
auf Bestellung 361 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.79 EUR
41+1.76 EUR
44+1.66 EUR
Mindestbestellmenge: 19
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PD2401 PD2401.pdf
PD2401
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Mounting: THT
Operating temperature: -40...85°C
Case: DIP4
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.25 EUR
12+6.25 EUR
13+5.91 EUR
Mindestbestellmenge: 9
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IXFH14N80P IXFH(Q,T)14N80P_S.pdf
IXFH14N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT14N80P IXFH(Q,T)14N80P_S.pdf
IXFT14N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTP80N10T IXTA(P)80N10T.pdf
IXTP80N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Drain-source voltage: 100V
Drain current: 80A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 14mΩ
Power dissipation: 230W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 60nC
Kind of channel: enhancement
Mounting: THT
Reverse recovery time: 100ns
Type of transistor: N-MOSFET
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.92 EUR
27+2.67 EUR
29+2.53 EUR
Mindestbestellmenge: 19
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IXFA180N10T2 IXFA(P)180N10T2.pdf
IXFA180N10T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Drain-source voltage: 100V
Drain current: 180A
Case: TO263
Polarisation: unipolar
On-state resistance: 6mΩ
Power dissipation: 480W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 185nC
Kind of channel: enhancement
Mounting: SMD
Reverse recovery time: 66ns
Type of transistor: N-MOSFET
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.32 EUR
13+5.51 EUR
50+5.42 EUR
Mindestbestellmenge: 10
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IXFP180N10T2 IXFA(P)180N10T2.pdf
IXFP180N10T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Drain-source voltage: 100V
Drain current: 180A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 6mΩ
Power dissipation: 480W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 185nC
Kind of channel: enhancement
Mounting: THT
Reverse recovery time: 66ns
Type of transistor: N-MOSFET
auf Bestellung 236 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.81 EUR
12+6.02 EUR
14+5.12 EUR
50+5.03 EUR
Mindestbestellmenge: 11
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IXTA180N10T IXTA(P)180N10T.pdf
IXTA180N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Drain-source voltage: 100V
Drain current: 180A
Case: TO263
Polarisation: unipolar
On-state resistance: 6.4mΩ
Power dissipation: 480W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 151nC
Kind of channel: enhancement
Mounting: SMD
Reverse recovery time: 72ns
Type of transistor: N-MOSFET
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.38 EUR
16+4.50 EUR
100+4.33 EUR
Mindestbestellmenge: 10
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IXYH75N65C3 IXYH75N65C3.pdf
IXYH75N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Produkt ist nicht verfügbar
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IXYH75N65C3H1 IXYH75N65C3H1.pdf
IXYH75N65C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 750W
Gate charge: 123nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Turn-on time: 90ns
Turn-off time: 179ns
Produkt ist nicht verfügbar
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IXYN75N65C3D1 IXYN75N65C3D1.pdf
IXYN75N65C3D1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Case: SOT227B
Power dissipation: 600W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 650V
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Produkt ist nicht verfügbar
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IXFP34N65X2 IXF_34N65X2.pdf
IXFP34N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
Produkt ist nicht verfügbar
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CPC1106N CPC1106N.pdf
CPC1106N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Turn-on time: 10ms
Turn-off time: 10ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NC
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: SOP4
auf Bestellung 3604 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
45+1.62 EUR
58+1.24 EUR
61+1.17 EUR
100+1.13 EUR
Mindestbestellmenge: 42
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CPC1106NTR CPC1106N.pdf
CPC1106NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 10ms
Turn-on time: 10ms
On-state resistance: 10Ω
Contacts configuration: SPST-NC
Manufacturer series: OptoMOS
auf Bestellung 1605 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
46+1.59 EUR
58+1.24 EUR
61+1.17 EUR
Mindestbestellmenge: 42
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IXGT72N60A3 IXG_72N60A3.pdf
IXGT72N60A3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO268
Type of transistor: IGBT
Power dissipation: 540W
Case: TO268
Mounting: SMD
Gate charge: 230nC
Kind of package: tube
Turn-off time: 885ns
Technology: GenX3™
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 72A
Pulsed collector current: 400A
Turn-on time: 61ns
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.80 EUR
7+10.57 EUR
8+10.00 EUR
Mindestbestellmenge: 5
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IXGH72N60A3 IXG_72N60A3.pdf
IXGH72N60A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Power dissipation: 540W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-off time: 885ns
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 72A
Pulsed collector current: 400A
Turn-on time: 61ns
auf Bestellung 252 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.24 EUR
9+8.18 EUR
10+7.74 EUR
120+7.68 EUR
Mindestbestellmenge: 6
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DSEI30-06A description DSEI30-06A.pdf
DSEI30-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 37A; tube; Ifsm: 300A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 37A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.85 EUR
14+5.26 EUR
18+4.19 EUR
19+3.96 EUR
120+3.90 EUR
Mindestbestellmenge: 13
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IXFA22N60P3 IXFA(H,P,Q)22N60P3.pdf
IXFA22N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.28 EUR
13+5.65 EUR
16+4.65 EUR
17+4.39 EUR
Mindestbestellmenge: 12
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IXFH22N60P IXFH22N60P.pdf
IXFH22N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.85 EUR
11+6.68 EUR
30+6.56 EUR
Mindestbestellmenge: 9
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IXFH22N60P3 IXFA(H,P,Q)22N60P3.pdf
IXFH22N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 599 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.34 EUR
14+5.12 EUR
15+4.83 EUR
270+4.78 EUR
300+4.65 EUR
Mindestbestellmenge: 10
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IXFP22N60P3 IXFA(H,P,Q)22N60P3.pdf
IXFP22N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.62 EUR
18+4.00 EUR
19+3.79 EUR
Mindestbestellmenge: 11
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DSA120X200LB-TUB DSA120X200LB.pdf
DSA120X200LB-TUB
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; tube; 185W
Case: SMPD
Max. off-state voltage: 200V
Max. forward voltage: 0.67V
Load current: 65A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
Power dissipation: 185W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: SMD
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
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IXKH35N60C5 IXKH35N60C5.pdf
IXKH35N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; 357W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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IXKN75N60C IXKN75N60C-DTE.pdf
IXKN75N60C
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 50A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 36mΩ
Pulsed drain current: 250A
Power dissipation: 560W
Technology: CoolMOS™
Gate-source voltage: ±20V
Mechanical mounting: screw
Reverse recovery time: 580ns
Gate charge: 500nC
Kind of channel: enhancement
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+77.82 EUR
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IXXH75N60C3 IXXH75N60C3.pdf
IXXH75N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-off time: 165ns
Gate-emitter voltage: ±20V
Turn-on time: 105ns
Pulsed collector current: 300A
Collector current: 75A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IXXH75N60C3D1 IXXH75N60C3D1.pdf
IXXH75N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-off time: 185ns
Gate-emitter voltage: ±20V
Turn-on time: 105ns
Pulsed collector current: 300A
Collector current: 75A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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CPC1301GR CPC1301GR.pdf
CPC1301GR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; SO4
Case: SO4
Number of channels: 1
Mounting: SMD
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-8000%@1mA
Type of optocoupler: optocoupler
auf Bestellung 358 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.19 EUR
39+1.86 EUR
51+1.42 EUR
54+1.33 EUR
100+1.29 EUR
Mindestbestellmenge: 33
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IXFN120N65X2 IXFN120N65X2.pdf
IXFN120N65X2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 108A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 24mΩ
Pulsed drain current: 240A
Power dissipation: 890W
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 220ns
Gate charge: 240nC
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
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IXFN26N120P IXFN26N120P.pdf
IXFN26N120P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.5Ω
Pulsed drain current: 60A
Power dissipation: 695W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 255nC
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+39.27 EUR
Mindestbestellmenge: 2
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IXFH30N50P IXFH30N50P.pdf
IXFH30N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; PolarHV™
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.18 EUR
9+8.12 EUR
10+7.68 EUR
30+7.55 EUR
Mindestbestellmenge: 8
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IXFH30N50Q3 IXFH30N50Q3.pdf
IXFH30N50Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Technology: HiPerFET™
Produkt ist nicht verfügbar
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IXFT30N50P IXFH30N50P.pdf
IXFT30N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT30N50Q3 IXFH30N50Q3.pdf
IXFT30N50Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTQ30N50L IXTH(Q,T)30N50L.pdf
IXTQ30N50L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTQ30N50L2 IXTH(Q,T)30N50L2.pdf
IXTQ30N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTQ30N50P IXTH(Q,T,V)30N50P_S.pdf
IXTQ30N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTT30N50L IXTH(Q,T)30N50L.pdf
IXTT30N50L
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTT30N50L2 IXTH(Q,T)30N50L2.pdf
IXTT30N50L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTT30N50P IXTH(Q,T,V)30N50P_S.pdf
IXTT30N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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CPC1114N CPC1114N.pdf
CPC1114N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 2ms
On-state resistance: 2Ω
Contacts configuration: SPST-NC
Manufacturer series: OptoMOS
auf Bestellung 608 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.22 EUR
39+1.86 EUR
52+1.40 EUR
54+1.33 EUR
Mindestbestellmenge: 33
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IXTK210P10T IXTK210P10T.pdf
IXTK210P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: TO264
Mounting: THT
Kind of package: tube
Reverse recovery time: 200ns
Drain-source voltage: -100V
Drain current: -210A
On-state resistance: 7.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 740nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.00 EUR
Mindestbestellmenge: 3
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IXFH150N20T IXFH(T)150N20T.pdf
IXFH150N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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IXTA76N25T IXTA(H,I,P,Q)76N25T.pdf
IXTA76N25T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 148ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTA76P10T IXT_76P10T_HV.pdf
IXTA76P10T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.19 EUR
12+6.46 EUR
14+5.15 EUR
15+4.88 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
DSIK45-16AR media?resourcetype=datasheets&itemid=d16330bf-b369-4dea-afcc-53e43f988a0d&filename=Littelfuse-Power-Semiconductors-DSIK45-16AR-Datasheet
DSIK45-16AR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45Ax2; tube; Ifsm: 480A; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.26V
Load current: 45A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.48kA
Power dissipation: 165W
Type of diode: rectifying
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.70 EUR
10+7.45 EUR
11+7.04 EUR
Mindestbestellmenge: 8
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IXTP450P2 IXTH(P,Q)450P2.pdf
IXTP450P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Reverse recovery time: 400ns
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.76 EUR
17+4.29 EUR
21+3.52 EUR
22+3.33 EUR
Mindestbestellmenge: 16
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MEE250-12DA PCN241015_Y4-M6 screw.pdf
MEE250-12DA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Case: Y4-M6
Max. off-state voltage: 1.2kV
Load current: 260A
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. forward voltage: 1.54V
Semiconductor structure: double series
Produkt ist nicht verfügbar
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IXFN110N85X IXFN110N85X.pdf
IXFN110N85X
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 220A
Power dissipation: 1170W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 205ns
Gate charge: 425nC
Kind of channel: enhancement
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+92.21 EUR
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IXFN150N65X2 IXFN150N65X2.pdf
IXFN150N65X2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 145A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 17mΩ
Pulsed drain current: 300A
Power dissipation: 1.04kW
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 190ns
Gate charge: 355nC
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+62.83 EUR
Mindestbestellmenge: 2
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IXFN180N15P description IXFN180N15P.pdf
IXFN180N15P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 150A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 11mΩ
Pulsed drain current: 380A
Power dissipation: 680W
Technology: HiPerFET™; PolarHT™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 240nC
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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