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FDA217S FDA217S IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.85 EUR
17+4.36 EUR
22+3.35 EUR
23+3.16 EUR
Mindestbestellmenge: 15
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CPC1968J CPC1968J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA92FB94A0B59FE0C4&compId=CPC1968.pdf?ci_sign=160af4d4d6569d9dbcf0943ab2d83726dac949bb Category: DC Solid State Relays
Description: Relay: solid state; Ucntrl: 0.9÷1.56VDC; 5A; max.500VDC; THT; 350mΩ
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 5A
Switched voltage: max. 500V DC
Relay variant: Photo MOSFET
On-state resistance: 0.35Ω
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 26.2x20x5mm
Control voltage: 0.9...1.56V DC
Operate time: 4.6ms
Release time: 0.07ms
Control current: 10mA
auf Bestellung 15 Stücke:
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4+22.05 EUR
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IXGR24N120C3D1 IXGR24N120C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC6F05F14E3820&compId=IXGR24N120C3D1.pdf?ci_sign=af08643f59ea5edc5b65e80d47d0185b2b6c112f Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 430ns
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IXGR55N120A3H1 IXGR55N120A3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD491737D79820&compId=IXGR55N120A3H1.pdf?ci_sign=8ff4a90dc5b497cce2442de4bf97526e3dcdb303 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™
Mounting: THT
Type of transistor: IGBT
Power dissipation: 200W
Kind of package: tube
Gate charge: 185nC
Technology: GenX3™; PT
Case: PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 330A
Turn-on time: 70ns
Turn-off time: 1253ns
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IXGR6N170A IXGR6N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE50C49C1F3820&compId=IXGR6N170A.pdf?ci_sign=8948416bce328945a3a4ac2809f5d3317343395b Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 2.5A
Power dissipation: 50W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
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IXTX90N25L2 IXTX90N25L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D374EE5CD85820&compId=IXTK(X)90N25L2.pdf?ci_sign=80bf7e49eeeb244aa8728ba401ffec2fb39f8e28 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Case: PLUS247™
Features of semiconductor devices: linear power mosfet
Gate charge: 640nC
Kind of channel: enhancement
Reverse recovery time: 266ns
Mounting: THT
Drain-source voltage: 250V
Drain current: 90A
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IXTX90P20P IXTX90P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9ECBA42874F8BF&compId=IXT_90P20P.pdf?ci_sign=51c0ccf646b8ee88bb3b4a442efcdd134c7b9d0f Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Drain-source voltage: -200V
Drain current: -90A
Gate charge: 205nC
Reverse recovery time: 315ns
On-state resistance: 44mΩ
Power dissipation: 890W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: PLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
auf Bestellung 138 Stücke:
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4+18.12 EUR
30+17.42 EUR
Mindestbestellmenge: 4
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MCD26-08IO1B MCD26-08IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFCCD2F11B1C0C4&compId=MCD26-08io1B.pdf?ci_sign=9a6942d374cdf75d8a1ab1d84902414ef95e38c5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. off-state voltage: 0.8kV
Load current: 27A
Max. forward impulse current: 520A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.27V
Threshold on-voltage: 0.85V
Max. load current: 42A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 100/200mA
auf Bestellung 2 Stücke:
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2+35.75 EUR
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MCD56-08IO1B MCD56-08IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFF1B629813A0C4&compId=MCD56-08io1B.pdf?ci_sign=821060ef1b8511e1aedf945e2c2f1ad91acdf64e pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Max. off-state voltage: 0.8kV
Load current: 60A
Max. forward impulse current: 1.5kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.24V
Threshold on-voltage: 0.85V
Max. load current: 100A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 100/200mA
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
3+28.03 EUR
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MCD26-12IO1B MCD26-12IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED997E95549EA455820&compId=MCD26-12io1B.pdf?ci_sign=4127869398e286376682561c16b0525127e15c21 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. off-state voltage: 1.2kV
Load current: 27A
Max. forward impulse current: 0.44kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.27V
Threshold on-voltage: 0.85V
Max. load current: 42A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 100/200mA
auf Bestellung 25 Stücke:
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3+24.72 EUR
4+23.38 EUR
10+22.54 EUR
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IXTP150N15X4 IXTP150N15X4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2893A5E251C9820&compId=IXTH(P)150N15X4.pdf?ci_sign=e12fd6602b056817d889d35f60740c06e4058b1c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 100ns
On-state resistance: 7.2mΩ
Power dissipation: 480W
Drain current: 150A
Drain-source voltage: 150V
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.27 EUR
10+7.26 EUR
11+6.86 EUR
50+6.61 EUR
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IXTQ150N15P IXTQ150N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF917F39DF4CDE27&compId=IXTK150N15P-DTE.pdf?ci_sign=c9c97c1328cecc3554885e3cfd29e98d52e29bb2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 0.19µC
Reverse recovery time: 150ns
On-state resistance: 13mΩ
Power dissipation: 714W
Drain current: 150A
Gate-source voltage: ±20V
Drain-source voltage: 150V
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IXTA3N150HV IXTA3N150HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B916E9820&compId=IXTA3N150HV.pdf?ci_sign=dad1621cba0475c0d32363ea748872e5286105f5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Type of transistor: N-MOSFET
Case: TO263
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Gate charge: 38.6nC
Reverse recovery time: 900ns
Power dissipation: 250W
Drain current: 3A
Drain-source voltage: 1.5kV
auf Bestellung 72 Stücke:
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7+11.58 EUR
8+9.45 EUR
50+9.17 EUR
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IXTQ3N150M IXTQ3N150M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A284803F9A26F820&compId=IXTQ3N150M.pdf?ci_sign=c567fa7384752102128d132316a07a52fc6dca9f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.83A
Pulsed drain current: 9A
Power dissipation: 73W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 7.3Ω
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
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IXFP10N60P IXFP10N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3172A28B93820&compId=IXFA(P)10N60P.pdf?ci_sign=de7479bbe4bb559868fc81e62408fc15628ae2c2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.49 EUR
23+3.13 EUR
27+2.75 EUR
28+2.59 EUR
50+2.5 EUR
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IXTP10N60P IXTP10N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12F7820&compId=IXTP10N60P.pdf?ci_sign=c8a5cd7138ab74dee443f89a317f173a43bfad11 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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IXFN110N60P3 IXFN110N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C7EC3367918BF&compId=IXFN110N60P3.pdf?ci_sign=d0968e82a80d72ea8c08fc609d26ee5426b318be Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Pulsed drain current: 275A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Gate charge: 254nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar3™
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFA10N60P IXFA10N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3172A28B93820&compId=IXFA(P)10N60P.pdf?ci_sign=de7479bbe4bb559868fc81e62408fc15628ae2c2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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IXFB110N60P3 IXFB110N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED44AB02F76EA18&compId=IXFB110N60P3.pdf?ci_sign=0293312a91129e825963c35231f446f72a37e881 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
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CPC9909NTR CPC9909NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CPC9909N CPC9909N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
18+3.98 EUR
23+3.25 EUR
38+1.89 EUR
41+1.77 EUR
100+1.76 EUR
300+1.72 EUR
Mindestbestellmenge: 18
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CPC9909NE CPC9909NE IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
auf Bestellung 1019 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.62 EUR
38+1.9 EUR
40+1.8 EUR
50+1.73 EUR
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CPC9909NETR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
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IXFR102N30P IXFR102N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A9B820&compId=IXFR102N30P.pdf?ci_sign=67b3ad18f9a19046de4d38e27866ae8ae91d5664 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Case: ISOPLUS247™
Drain-source voltage: 300V
Drain current: 60A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Gate charge: 224nC
Kind of channel: enhancement
Mounting: THT
auf Bestellung 10 Stücke:
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5+16.07 EUR
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IXFN44N80P IXFN44N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C9A3C8EBA98BF&compId=IXFN44N80P.pdf?ci_sign=e5454b9129ad828efae0eebe210c810d51dfce0d description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 200nC
Reverse recovery time: 250ns
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
2+37.29 EUR
3+35.26 EUR
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IXFN44N80Q3 IXFN44N80Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9F937B909F820&compId=IXFN44N80Q3.pdf?ci_sign=fd80aa4819d75a8d19acc0bc3f82bfef6bd57b62 Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Reverse recovery time: 300ns
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXTP60N10T IXTP60N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Reverse recovery time: 59ns
auf Bestellung 298 Stücke:
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27+2.67 EUR
40+1.8 EUR
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IXFN360N10T IXFN360N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C5891EC71D8BF&compId=IXFN360N10T.pdf?ci_sign=f49be72713bf6a9d89a1f56881e5f6829ccb1185 Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 360A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.6mΩ
Pulsed drain current: 900A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 525nC
Reverse recovery time: 130ns
Kind of channel: enhancement
auf Bestellung 230 Stücke:
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IXFX360N10T IXFX360N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBEC3CAC2D3820&compId=IXFK(X)360N10T.pdf?ci_sign=3e3c42ae502f5134306933943e750d4d7a30bb3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Drain-source voltage: 100V
Drain current: 360A
Case: PLUS247™
Polarisation: unipolar
On-state resistance: 2.9mΩ
Power dissipation: 1.25kW
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 525nC
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
auf Bestellung 20 Stücke:
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IXTP160N10T IXTP160N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC32F0A59E98BF&compId=IXT_160N10T.pdf?ci_sign=4e0d41f291e819e28cb8f258dae732c56a617f1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Mounting: THT
Technology: Trench™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Gate charge: 132nC
Reverse recovery time: 60ns
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Power dissipation: 430W
auf Bestellung 272 Stücke:
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IXFN44N100Q3 IXFN44N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA77628F9891820&compId=IXFN44N100Q3.pdf?ci_sign=50013891e5e63e84eaa5c1c71ffceb0e2e5badb1 Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 38A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 264nC
Reverse recovery time: 300ns
Kind of channel: enhancement
auf Bestellung 7 Stücke:
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DSA1-12D DSA1-12D IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82836F916CE143&compId=DSA1-18D.pdf?ci_sign=452a5902ddb9885d20bbcd189749dd424e83331a Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 2.3A; tube; Ifsm: 110A; FP-Case
Max. forward impulse current: 110A
Max. forward voltage: 1.34V
Kind of package: tube
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Case: FP-Case
Features of semiconductor devices: avalanche breakdown effect
Load current: 2.3A
Mounting: THT
Semiconductor structure: single diode
auf Bestellung 64 Stücke:
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16+4.76 EUR
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IXTH48N65X2 IXTH48N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB08067F19B8BF&compId=IXTH48N65X2.pdf?ci_sign=3fee5355228981f07eb60f0ef37319b01c5dd675 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.45 EUR
8+9.21 EUR
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IXFH60N65X2 IXFH60N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147FA5820&compId=IXFH60N65X2.pdf?ci_sign=c67e1a4e79563fac537565ecfa45bb884c2d9493 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 120A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Technology: HiPerFET™; X2-Class
Reverse recovery time: 180ns
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IXFH60N65X2-4 IXFH60N65X2-4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB405CA4C198BF&compId=IXFH60N65X2-4.pdf?ci_sign=68a836b0cb6aa37c0b5648bb269baf9e7eeb72ea Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
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IXFT60N65X2HV IXFT60N65X2HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB44BC9A8438BF&compId=IXFT60N65X2HV.pdf?ci_sign=6e5a6b51c105f18c4ec6d132232fc4d58f2d4e2f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Reverse recovery time: 180ns
auf Bestellung 26 Stücke:
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6+12.71 EUR
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IXXH60N65B4 IXXH60N65B4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9B02C1EEBB820&compId=IXXH60N65B4.pdf?ci_sign=a8031f26dadaab9cb288a0d9006d6deb1d61fc37 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Power dissipation: 536W
Case: TO247-3
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 265A
Turn-on time: 94ns
Turn-off time: 208ns
auf Bestellung 235 Stücke:
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IXXH60N65B4H1 IXXH60N65B4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA41BE37C998BF&compId=IXXH60N65B4H1.pdf?ci_sign=3218f9ada32bbb51384480c616296b03ed0d41c5 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Power dissipation: 536W
Case: TO247-3
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 265A
Turn-on time: 94ns
Turn-off time: 208ns
auf Bestellung 298 Stücke:
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5+16.43 EUR
7+11.21 EUR
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IXXH60N65C4 IXXH60N65C4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9C1CB239E3820&compId=IXXH60N65C4.pdf?ci_sign=2d606bf4989e65bc1f4779e26a9db028b66a64b7 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Power dissipation: 536W
Case: TO247-3
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 260A
Turn-on time: 110ns
Turn-off time: 164ns
Produkt ist nicht verfügbar
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IXXK160N65B4 IXXK160N65B4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA5D65CB90B820&compId=IXXK(x)160N65B4.pdf?ci_sign=9f5367c32f30879b6456d2d25578b70ad46909cd Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Power dissipation: 940W
Case: TO264
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 860A
Turn-on time: 93ns
Turn-off time: 380ns
auf Bestellung 220 Stücke:
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25+21.32 EUR
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IXXK160N65C4 IXYS littelfuse_discrete_igbts_xpt_ixx_160n65c4_datasheet.pdf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Power dissipation: 940W
Case: TO264
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 320A
Turn-on time: 52ns
Turn-off time: 197ns
Produkt ist nicht verfügbar
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IXXX160N65B4 IXXX160N65B4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA5D65CB90B820&compId=IXXK(x)160N65B4.pdf?ci_sign=9f5367c32f30879b6456d2d25578b70ad46909cd Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Power dissipation: 940W
Case: PLUS247™
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 860A
Turn-on time: 93ns
Turn-off time: 380ns
Produkt ist nicht verfügbar
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IXXX160N65C4 IXYS littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Power dissipation: 940W
Case: PLUS247™
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 320A
Turn-on time: 52ns
Turn-off time: 197ns
Produkt ist nicht verfügbar
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DSEC16-06A DSEC16-06A IXYS media?resourcetype=datasheets&itemid=508d2251-0e5c-48cf-8629-cef1a4793aa5&filename=Littelfuse-Power-Semiconductors-DSEC16-06A-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Max. forward impulse current: 50A
Power dissipation: 60W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
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DSEC16-06AC DSEC16-06AC IXYS media?resourcetype=datasheets&itemid=727180e8-2052-4708-a088-44156766e2f7&filename=Littelfuse-Power-Semiconductors-DSEC16-06AC-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Max. forward impulse current: 50A
Power dissipation: 60W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Case: ISOPLUS220™
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 30ns
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IXTA160N04T2 IXTA160N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D343726746F820&compId=IXTA(P)160N04T2.pdf?ci_sign=1ef255f02603c204453a71fc648bc877e8e7741f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
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IXTP160N04T2 IXTP160N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D343726746F820&compId=IXTA(P)160N04T2.pdf?ci_sign=1ef255f02603c204453a71fc648bc877e8e7741f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
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IXFH46N65X2 IXFH46N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F8F820&compId=IXFH46N65X2.pdf?ci_sign=18d8737ea270a8587aa3e2cf370bec98f3fe9809 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 257 Stücke:
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9+8.08 EUR
10+7.76 EUR
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CPC1150N CPC1150N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A3B9CF7BD978BF&compId=CPC1150N.pdf?ci_sign=c821c2d7d5de511af558a9ef727e8d94eaa1df7b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
auf Bestellung 105 Stücke:
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19+3.95 EUR
40+1.83 EUR
42+1.73 EUR
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IXFH14N80P IXFH14N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF8DAC82F1820&compId=IXFH(Q%2CT)14N80P_S.pdf?ci_sign=54c4a7d42ec81caabad0953bf61c033b9e6baf24 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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IXTP80N10T IXTP80N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D406B88E9F9820&compId=IXTA(P)80N10T.pdf?ci_sign=bc8f5f5b020fd346b1d379e0314e69667636f1ab Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Drain-source voltage: 100V
Drain current: 80A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 14mΩ
Power dissipation: 230W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 60nC
Kind of channel: enhancement
Mounting: THT
Reverse recovery time: 100ns
Type of transistor: N-MOSFET
auf Bestellung 127 Stücke:
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19+3.92 EUR
27+2.67 EUR
29+2.53 EUR
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IXFA180N10T2 IXFA180N10T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2855F843BCA1820&compId=IXFA(P)180N10T2.pdf?ci_sign=613033688ed8f73bb8407a0f31dc76dac86260fe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 66ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.32 EUR
13+5.51 EUR
50+5.42 EUR
Mindestbestellmenge: 10
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IXFP180N10T2 IXFP180N10T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2855F843BCA1820&compId=IXFA(P)180N10T2.pdf?ci_sign=613033688ed8f73bb8407a0f31dc76dac86260fe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 66ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXYH75N65C3 IXYH75N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9CC3DBEE55820&compId=IXYH75N65C3.pdf?ci_sign=83a14405d58a0734a9b50875b6ba75d0d3f838e7 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Turn-on time: 90ns
Turn-off time: 179ns
Produkt ist nicht verfügbar
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IXYH75N65C3H1 IXYH75N65C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9CEAAE3DBB820&compId=IXYH75N65C3H1.pdf?ci_sign=7d4926bc5c44362da56f14cd52c04f1d4cb3fc01 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Turn-on time: 90ns
Turn-off time: 179ns
Produkt ist nicht verfügbar
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IXYN75N65C3D1 IXYN75N65C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F345CF0D751820&compId=IXYN75N65C3D1.pdf?ci_sign=b4b795b6798081b53630ff34ac7c75fd76591ca3 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Case: SOT227B
Power dissipation: 600W
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Max. off-state voltage: 650V
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Produkt ist nicht verfügbar
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IXFP34N65X2 IXFP34N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB353D0CCAB8BF&compId=IXF_34N65X2.pdf?ci_sign=be7eb96a01584ff699e1ad5c4f717dbfd125b3d5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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CPC1106N CPC1106N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75E80C7&compId=CPC1106N.pdf?ci_sign=8c782f12f65952eb66dd4b4c0c46f9f3e8745e8a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
auf Bestellung 3391 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.53 EUR
50+1.44 EUR
54+1.33 EUR
57+1.26 EUR
60+1.2 EUR
Mindestbestellmenge: 47
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CPC1106NTR CPC1106NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75E80C7&compId=CPC1106N.pdf?ci_sign=8c782f12f65952eb66dd4b4c0c46f9f3e8745e8a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
auf Bestellung 1605 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.76 EUR
44+1.64 EUR
57+1.27 EUR
59+1.22 EUR
Mindestbestellmenge: 41
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IXGT72N60A3 IXGT72N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995F26C6047E6B8BF&compId=IXG_72N60A3.pdf?ci_sign=0ce66d2a8d28592d9e3c10534b015eab49abd70e Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: SMD
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
Technology: GenX3™
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.8 EUR
7+10.58 EUR
8+10 EUR
Mindestbestellmenge: 5
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FDA217S pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b
FDA217S
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.85 EUR
17+4.36 EUR
22+3.35 EUR
23+3.16 EUR
Mindestbestellmenge: 15
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CPC1968J pVersion=0046&contRep=ZT&docId=005056AB90B41EDA92FB94A0B59FE0C4&compId=CPC1968.pdf?ci_sign=160af4d4d6569d9dbcf0943ab2d83726dac949bb
CPC1968J
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; Ucntrl: 0.9÷1.56VDC; 5A; max.500VDC; THT; 350mΩ
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 5A
Switched voltage: max. 500V DC
Relay variant: Photo MOSFET
On-state resistance: 0.35Ω
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 26.2x20x5mm
Control voltage: 0.9...1.56V DC
Operate time: 4.6ms
Release time: 0.07ms
Control current: 10mA
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+22.05 EUR
Mindestbestellmenge: 4
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IXGR24N120C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC6F05F14E3820&compId=IXGR24N120C3D1.pdf?ci_sign=af08643f59ea5edc5b65e80d47d0185b2b6c112f
IXGR24N120C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 430ns
Produkt ist nicht verfügbar
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IXGR55N120A3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD491737D79820&compId=IXGR55N120A3H1.pdf?ci_sign=8ff4a90dc5b497cce2442de4bf97526e3dcdb303
IXGR55N120A3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™
Mounting: THT
Type of transistor: IGBT
Power dissipation: 200W
Kind of package: tube
Gate charge: 185nC
Technology: GenX3™; PT
Case: PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 330A
Turn-on time: 70ns
Turn-off time: 1253ns
Produkt ist nicht verfügbar
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IXGR6N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE50C49C1F3820&compId=IXGR6N170A.pdf?ci_sign=8948416bce328945a3a4ac2809f5d3317343395b
IXGR6N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 2.5A
Power dissipation: 50W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXTX90N25L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D374EE5CD85820&compId=IXTK(X)90N25L2.pdf?ci_sign=80bf7e49eeeb244aa8728ba401ffec2fb39f8e28
IXTX90N25L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Case: PLUS247™
Features of semiconductor devices: linear power mosfet
Gate charge: 640nC
Kind of channel: enhancement
Reverse recovery time: 266ns
Mounting: THT
Drain-source voltage: 250V
Drain current: 90A
Produkt ist nicht verfügbar
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IXTX90P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9ECBA42874F8BF&compId=IXT_90P20P.pdf?ci_sign=51c0ccf646b8ee88bb3b4a442efcdd134c7b9d0f
IXTX90P20P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Drain-source voltage: -200V
Drain current: -90A
Gate charge: 205nC
Reverse recovery time: 315ns
On-state resistance: 44mΩ
Power dissipation: 890W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: PLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.12 EUR
30+17.42 EUR
Mindestbestellmenge: 4
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MCD26-08IO1B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFCCD2F11B1C0C4&compId=MCD26-08io1B.pdf?ci_sign=9a6942d374cdf75d8a1ab1d84902414ef95e38c5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCD26-08IO1B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. off-state voltage: 0.8kV
Load current: 27A
Max. forward impulse current: 520A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.27V
Threshold on-voltage: 0.85V
Max. load current: 42A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 100/200mA
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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MCD56-08IO1B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFF1B629813A0C4&compId=MCD56-08io1B.pdf?ci_sign=821060ef1b8511e1aedf945e2c2f1ad91acdf64e pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCD56-08IO1B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Max. off-state voltage: 0.8kV
Load current: 60A
Max. forward impulse current: 1.5kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.24V
Threshold on-voltage: 0.85V
Max. load current: 100A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 100/200mA
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+28.03 EUR
Mindestbestellmenge: 3
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MCD26-12IO1B pVersion=0046&contRep=ZT&docId=005056AB82531ED997E95549EA455820&compId=MCD26-12io1B.pdf?ci_sign=4127869398e286376682561c16b0525127e15c21 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCD26-12IO1B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. off-state voltage: 1.2kV
Load current: 27A
Max. forward impulse current: 0.44kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.27V
Threshold on-voltage: 0.85V
Max. load current: 42A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 100/200mA
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.72 EUR
4+23.38 EUR
10+22.54 EUR
Mindestbestellmenge: 3
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IXTP150N15X4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2893A5E251C9820&compId=IXTH(P)150N15X4.pdf?ci_sign=e12fd6602b056817d889d35f60740c06e4058b1c
IXTP150N15X4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 100ns
On-state resistance: 7.2mΩ
Power dissipation: 480W
Drain current: 150A
Drain-source voltage: 150V
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.27 EUR
10+7.26 EUR
11+6.86 EUR
50+6.61 EUR
Mindestbestellmenge: 7
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IXTQ150N15P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF917F39DF4CDE27&compId=IXTK150N15P-DTE.pdf?ci_sign=c9c97c1328cecc3554885e3cfd29e98d52e29bb2
IXTQ150N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 0.19µC
Reverse recovery time: 150ns
On-state resistance: 13mΩ
Power dissipation: 714W
Drain current: 150A
Gate-source voltage: ±20V
Drain-source voltage: 150V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXTA3N150HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B916E9820&compId=IXTA3N150HV.pdf?ci_sign=dad1621cba0475c0d32363ea748872e5286105f5
IXTA3N150HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Type of transistor: N-MOSFET
Case: TO263
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Gate charge: 38.6nC
Reverse recovery time: 900ns
Power dissipation: 250W
Drain current: 3A
Drain-source voltage: 1.5kV
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.58 EUR
8+9.45 EUR
50+9.17 EUR
Mindestbestellmenge: 7
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IXTQ3N150M pVersion=0046&contRep=ZT&docId=005056AB82531ED9A284803F9A26F820&compId=IXTQ3N150M.pdf?ci_sign=c567fa7384752102128d132316a07a52fc6dca9f
IXTQ3N150M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.83A
Pulsed drain current: 9A
Power dissipation: 73W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 7.3Ω
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
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IXFP10N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3172A28B93820&compId=IXFA(P)10N60P.pdf?ci_sign=de7479bbe4bb559868fc81e62408fc15628ae2c2
IXFP10N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.49 EUR
23+3.13 EUR
27+2.75 EUR
28+2.59 EUR
50+2.5 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IXTP10N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12F7820&compId=IXTP10N60P.pdf?ci_sign=c8a5cd7138ab74dee443f89a317f173a43bfad11
IXTP10N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN110N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C7EC3367918BF&compId=IXFN110N60P3.pdf?ci_sign=d0968e82a80d72ea8c08fc609d26ee5426b318be
IXFN110N60P3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Pulsed drain current: 275A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Gate charge: 254nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar3™
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA10N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3172A28B93820&compId=IXFA(P)10N60P.pdf?ci_sign=de7479bbe4bb559868fc81e62408fc15628ae2c2
IXFA10N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFB110N60P3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED44AB02F76EA18&compId=IXFB110N60P3.pdf?ci_sign=0293312a91129e825963c35231f446f72a37e881
IXFB110N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC9909NTR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a
CPC9909NTR
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC9909N pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a
CPC9909N
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
23+3.25 EUR
38+1.89 EUR
41+1.77 EUR
100+1.76 EUR
300+1.72 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
CPC9909NE pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a
CPC9909NE
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
auf Bestellung 1019 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.62 EUR
38+1.9 EUR
40+1.8 EUR
50+1.73 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
CPC9909NETR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR102N30P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A9B820&compId=IXFR102N30P.pdf?ci_sign=67b3ad18f9a19046de4d38e27866ae8ae91d5664
IXFR102N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Case: ISOPLUS247™
Drain-source voltage: 300V
Drain current: 60A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Gate charge: 224nC
Kind of channel: enhancement
Mounting: THT
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.07 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N80P description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C9A3C8EBA98BF&compId=IXFN44N80P.pdf?ci_sign=e5454b9129ad828efae0eebe210c810d51dfce0d
IXFN44N80P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 200nC
Reverse recovery time: 250ns
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+37.29 EUR
3+35.26 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N80Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9F937B909F820&compId=IXFN44N80Q3.pdf?ci_sign=fd80aa4819d75a8d19acc0bc3f82bfef6bd57b62
IXFN44N80Q3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Reverse recovery time: 300ns
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP60N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951
IXTP60N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Reverse recovery time: 59ns
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.67 EUR
40+1.8 EUR
43+1.7 EUR
100+1.64 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IXFN360N10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C5891EC71D8BF&compId=IXFN360N10T.pdf?ci_sign=f49be72713bf6a9d89a1f56881e5f6829ccb1185
IXFN360N10T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 360A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.6mΩ
Pulsed drain current: 900A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 525nC
Reverse recovery time: 130ns
Kind of channel: enhancement
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+27.96 EUR
5+27.71 EUR
10+26.88 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFX360N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBEC3CAC2D3820&compId=IXFK(X)360N10T.pdf?ci_sign=3e3c42ae502f5134306933943e750d4d7a30bb3e
IXFX360N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Drain-source voltage: 100V
Drain current: 360A
Case: PLUS247™
Polarisation: unipolar
On-state resistance: 2.9mΩ
Power dissipation: 1.25kW
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 525nC
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+17.39 EUR
6+12.41 EUR
7+11.74 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXTP160N10T pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC32F0A59E98BF&compId=IXT_160N10T.pdf?ci_sign=4e0d41f291e819e28cb8f258dae732c56a617f1b
IXTP160N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Mounting: THT
Technology: Trench™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Gate charge: 132nC
Reverse recovery time: 60ns
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Power dissipation: 430W
auf Bestellung 272 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.23 EUR
19+3.93 EUR
20+3.72 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA77628F9891820&compId=IXFN44N100Q3.pdf?ci_sign=50013891e5e63e84eaa5c1c71ffceb0e2e5badb1
IXFN44N100Q3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 38A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 264nC
Reverse recovery time: 300ns
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DSA1-12D pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82836F916CE143&compId=DSA1-18D.pdf?ci_sign=452a5902ddb9885d20bbcd189749dd424e83331a
DSA1-12D
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 2.3A; tube; Ifsm: 110A; FP-Case
Max. forward impulse current: 110A
Max. forward voltage: 1.34V
Kind of package: tube
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Case: FP-Case
Features of semiconductor devices: avalanche breakdown effect
Load current: 2.3A
Mounting: THT
Semiconductor structure: single diode
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.76 EUR
17+4.33 EUR
18+4.1 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IXTH48N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB08067F19B8BF&compId=IXTH48N65X2.pdf?ci_sign=3fee5355228981f07eb60f0ef37319b01c5dd675
IXTH48N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.45 EUR
8+9.21 EUR
9+8.69 EUR
10+8.37 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFH60N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147FA5820&compId=IXFH60N65X2.pdf?ci_sign=c67e1a4e79563fac537565ecfa45bb884c2d9493
IXFH60N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 120A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Technology: HiPerFET™; X2-Class
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH60N65X2-4 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB405CA4C198BF&compId=IXFH60N65X2-4.pdf?ci_sign=68a836b0cb6aa37c0b5648bb269baf9e7eeb72ea
IXFH60N65X2-4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT60N65X2HV pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB44BC9A8438BF&compId=IXFT60N65X2HV.pdf?ci_sign=6e5a6b51c105f18c4ec6d132232fc4d58f2d4e2f
IXFT60N65X2HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Reverse recovery time: 180ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.71 EUR
7+11.1 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXXH60N65B4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9B02C1EEBB820&compId=IXXH60N65B4.pdf?ci_sign=a8031f26dadaab9cb288a0d9006d6deb1d61fc37
IXXH60N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Power dissipation: 536W
Case: TO247-3
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 265A
Turn-on time: 94ns
Turn-off time: 208ns
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.12 EUR
11+6.54 EUR
12+6.19 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXXH60N65B4H1 pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA41BE37C998BF&compId=IXXH60N65B4H1.pdf?ci_sign=3218f9ada32bbb51384480c616296b03ed0d41c5
IXXH60N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Power dissipation: 536W
Case: TO247-3
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 265A
Turn-on time: 94ns
Turn-off time: 208ns
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.43 EUR
7+11.21 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXXH60N65C4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9C1CB239E3820&compId=IXXH60N65C4.pdf?ci_sign=2d606bf4989e65bc1f4779e26a9db028b66a64b7
IXXH60N65C4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Power dissipation: 536W
Case: TO247-3
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 260A
Turn-on time: 110ns
Turn-off time: 164ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXXK160N65B4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA5D65CB90B820&compId=IXXK(x)160N65B4.pdf?ci_sign=9f5367c32f30879b6456d2d25578b70ad46909cd
IXXK160N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Power dissipation: 940W
Case: TO264
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 860A
Turn-on time: 93ns
Turn-off time: 380ns
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.52 EUR
25+21.32 EUR
100+20.69 EUR
Mindestbestellmenge: 4
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IXXK160N65C4 littelfuse_discrete_igbts_xpt_ixx_160n65c4_datasheet.pdf.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Power dissipation: 940W
Case: TO264
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 320A
Turn-on time: 52ns
Turn-off time: 197ns
Produkt ist nicht verfügbar
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IXXX160N65B4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA5D65CB90B820&compId=IXXK(x)160N65B4.pdf?ci_sign=9f5367c32f30879b6456d2d25578b70ad46909cd
IXXX160N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Power dissipation: 940W
Case: PLUS247™
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 860A
Turn-on time: 93ns
Turn-off time: 380ns
Produkt ist nicht verfügbar
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IXXX160N65C4 littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Power dissipation: 940W
Case: PLUS247™
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 320A
Turn-on time: 52ns
Turn-off time: 197ns
Produkt ist nicht verfügbar
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DSEC16-06A media?resourcetype=datasheets&itemid=508d2251-0e5c-48cf-8629-cef1a4793aa5&filename=Littelfuse-Power-Semiconductors-DSEC16-06A-Datasheet
DSEC16-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Max. forward impulse current: 50A
Power dissipation: 60W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
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DSEC16-06AC media?resourcetype=datasheets&itemid=727180e8-2052-4708-a088-44156766e2f7&filename=Littelfuse-Power-Semiconductors-DSEC16-06AC-Datasheet
DSEC16-06AC
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Max. forward impulse current: 50A
Power dissipation: 60W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Case: ISOPLUS220™
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
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IXTA160N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D343726746F820&compId=IXTA(P)160N04T2.pdf?ci_sign=1ef255f02603c204453a71fc648bc877e8e7741f
IXTA160N04T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
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IXTP160N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D343726746F820&compId=IXTA(P)160N04T2.pdf?ci_sign=1ef255f02603c204453a71fc648bc877e8e7741f
IXTP160N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
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IXFH46N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F8F820&compId=IXFH46N65X2.pdf?ci_sign=18d8737ea270a8587aa3e2cf370bec98f3fe9809
IXFH46N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.08 EUR
10+7.76 EUR
Mindestbestellmenge: 9
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CPC1150N pVersion=0046&contRep=ZT&docId=005056AB82531EE995A3B9CF7BD978BF&compId=CPC1150N.pdf?ci_sign=c821c2d7d5de511af558a9ef727e8d94eaa1df7b
CPC1150N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.95 EUR
40+1.83 EUR
42+1.73 EUR
Mindestbestellmenge: 19
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IXFH14N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF8DAC82F1820&compId=IXFH(Q%2CT)14N80P_S.pdf?ci_sign=54c4a7d42ec81caabad0953bf61c033b9e6baf24
IXFH14N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTP80N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D406B88E9F9820&compId=IXTA(P)80N10T.pdf?ci_sign=bc8f5f5b020fd346b1d379e0314e69667636f1ab
IXTP80N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Drain-source voltage: 100V
Drain current: 80A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 14mΩ
Power dissipation: 230W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 60nC
Kind of channel: enhancement
Mounting: THT
Reverse recovery time: 100ns
Type of transistor: N-MOSFET
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.92 EUR
27+2.67 EUR
29+2.53 EUR
Mindestbestellmenge: 19
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IXFA180N10T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2855F843BCA1820&compId=IXFA(P)180N10T2.pdf?ci_sign=613033688ed8f73bb8407a0f31dc76dac86260fe
IXFA180N10T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 66ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.32 EUR
13+5.51 EUR
50+5.42 EUR
Mindestbestellmenge: 10
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IXFP180N10T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2855F843BCA1820&compId=IXFA(P)180N10T2.pdf?ci_sign=613033688ed8f73bb8407a0f31dc76dac86260fe
IXFP180N10T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 66ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXYH75N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9CC3DBEE55820&compId=IXYH75N65C3.pdf?ci_sign=83a14405d58a0734a9b50875b6ba75d0d3f838e7
IXYH75N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Turn-on time: 90ns
Turn-off time: 179ns
Produkt ist nicht verfügbar
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IXYH75N65C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9CEAAE3DBB820&compId=IXYH75N65C3H1.pdf?ci_sign=7d4926bc5c44362da56f14cd52c04f1d4cb3fc01
IXYH75N65C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Turn-on time: 90ns
Turn-off time: 179ns
Produkt ist nicht verfügbar
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IXYN75N65C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F345CF0D751820&compId=IXYN75N65C3D1.pdf?ci_sign=b4b795b6798081b53630ff34ac7c75fd76591ca3
IXYN75N65C3D1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Case: SOT227B
Power dissipation: 600W
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Max. off-state voltage: 650V
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Produkt ist nicht verfügbar
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IXFP34N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB353D0CCAB8BF&compId=IXF_34N65X2.pdf?ci_sign=be7eb96a01584ff699e1ad5c4f717dbfd125b3d5
IXFP34N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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CPC1106N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75E80C7&compId=CPC1106N.pdf?ci_sign=8c782f12f65952eb66dd4b4c0c46f9f3e8745e8a
CPC1106N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
auf Bestellung 3391 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.53 EUR
50+1.44 EUR
54+1.33 EUR
57+1.26 EUR
60+1.2 EUR
Mindestbestellmenge: 47
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CPC1106NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75E80C7&compId=CPC1106N.pdf?ci_sign=8c782f12f65952eb66dd4b4c0c46f9f3e8745e8a
CPC1106NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
auf Bestellung 1605 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.76 EUR
44+1.64 EUR
57+1.27 EUR
59+1.22 EUR
Mindestbestellmenge: 41
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IXGT72N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995F26C6047E6B8BF&compId=IXG_72N60A3.pdf?ci_sign=0ce66d2a8d28592d9e3c10534b015eab49abd70e
IXGT72N60A3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: SMD
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
Technology: GenX3™
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.8 EUR
7+10.58 EUR
8+10 EUR
Mindestbestellmenge: 5
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