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IXFR24N80P IXFR24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2857DA3FF1A1820&compId=IXFR24N80P.pdf?ci_sign=873856e0e863a27e19dde25c672bc74899b0f721 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
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IXFX34N80 IXFX34N80 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5531C0BEB820&compId=IXFK(X)34N80.pdf?ci_sign=c21449cd8db7a186cc87835ff14b3420826840c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
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IXFX44N80P IXFX44N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55A88536A9820&compId=IXFK(X)44N80P.pdf?ci_sign=fe7a22c35d7909b220aeebf7fe0c0b6a1d419d2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
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CPC1972G CPC1972G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AF084E0C7&compId=CPC1972.pdf?ci_sign=ad681fe35f2cbf4725519c25a38bae72b51c2f77 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
auf Bestellung 541 Stücke:
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43+1.7 EUR
47+1.53 EUR
55+1.3 EUR
59+1.23 EUR
Mindestbestellmenge: 43
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IXTP08N100D2 IXTP08N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D5010345B820&compId=IXTA(P%2CY)08N100D2.pdf?ci_sign=ff8d8aff111d8414478644545169c45d10c4ed47 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 21Ω
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Kind of channel: depletion
auf Bestellung 82 Stücke:
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18+4.15 EUR
35+2.09 EUR
37+1.97 EUR
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IXFP44N25X3 IXFP44N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: THT
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 66A
Case: TO220AB
Reverse recovery time: 87ns
Drain-source voltage: 250V
Drain current: 44A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
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IXTT64N25P IXTT64N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CE00FFAAFE27&compId=IXTQ64N25P-DTE.pdf?ci_sign=8629d9d38dc4d997f8392b5cabb1618306ba9fab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO268
Mounting: SMD
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Gate charge: 105nC
Technology: PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO268
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 64A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
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CPC1394GR CPC1394GR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320045E0C7&compId=CPC1394.pdf?ci_sign=d7d0c6af5a4e35ec08801baf972a55daaba17e76 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 40Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 3ms
Kind of output: MOSFET
auf Bestellung 2101 Stücke:
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19+3.85 EUR
33+2.19 EUR
35+2.07 EUR
500+2.03 EUR
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CPC1394GV CPC1394GV IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320045E0C7&compId=CPC1394.pdf?ci_sign=d7d0c6af5a4e35ec08801baf972a55daaba17e76 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 5ms
On-state resistance: 40Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
auf Bestellung 452 Stücke:
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33+2.19 EUR
35+2.07 EUR
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IXFK78N50P3 IXFK78N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D410DC139CF820&compId=IXFK(X)78N50P3.pdf?ci_sign=5f610dbd75428f65aab0cd1f86573c38c778a434 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: TO264
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
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4+18.35 EUR
6+12.63 EUR
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IXFK98N50P3 IXFK98N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D35AB462127820&compId=IXFK(X)98N50P3.pdf?ci_sign=503a48a7a9f46ebf3b6b7f092e5d7520b9bd3c32 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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IXFX78N50P3 IXFX78N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D410DC139CF820&compId=IXFK(X)78N50P3.pdf?ci_sign=5f610dbd75428f65aab0cd1f86573c38c778a434 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
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IXFX98N50P3 IXFX98N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D35AB462127820&compId=IXFK(X)98N50P3.pdf?ci_sign=503a48a7a9f46ebf3b6b7f092e5d7520b9bd3c32 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 5 Stücke:
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4+21.25 EUR
5+15.56 EUR
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DSB15IM45IB DSB15IM45IB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9DE16ECF1B8BF&compId=DSB15IM45IB.pdf?ci_sign=111fdfb47a0ed9e4fcc4c5a565d872868ea000e5 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.55V; 70W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: TO262
Max. forward voltage: 0.55V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
auf Bestellung 494 Stücke:
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157+0.46 EUR
166+0.43 EUR
171+0.42 EUR
176+0.41 EUR
178+0.4 EUR
250+0.39 EUR
Mindestbestellmenge: 157
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IXFN210N30P3 IXFN210N30P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF91C31173D1820&compId=IXFN210N30P3.pdf?ci_sign=822d8ac666dc943cca774a0528aebea732c66ae7 Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 192A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14.5mΩ
Pulsed drain current: 550A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar3™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 268nC
Reverse recovery time: 250ns
Kind of channel: enhancement
auf Bestellung 1 Stücke:
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1+71.5 EUR
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MCMA35PD1600TB MCMA35PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD8104FC036B00C4&compId=MCMA35PD1600TB.pdf?ci_sign=55ae504df2d82c6c04ccd8c02f974e8b0f361824 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Max. off-state voltage: 1.6kV
Load current: 35A
Max. forward impulse current: 520A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.22V
Threshold on-voltage: 0.87V
Max. load current: 55A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 78/200mA
auf Bestellung 36 Stücke:
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3+26.77 EUR
10+25.74 EUR
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MCD132-08io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B8ECB0EE1D388143&compId=MCD132-08io1.pdf?ci_sign=4343034c745f825e4fdd0005efd4f09ce7a057f3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 0.8kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Type of semiconductor module: diode-thyristor
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IXFH16N80P IXFH16N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBE3876A2C78BF&compId=IXFH16N80P.pdf?ci_sign=d439feac37a891fbe96fd8303945e86c880ee0ca Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXFT16N80P IXFT16N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBE3876A2C78BF&compId=IXFH16N80P.pdf?ci_sign=d439feac37a891fbe96fd8303945e86c880ee0ca Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
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IXFX27N80Q IXFX27N80Q IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 98 Stücke:
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3+24.55 EUR
4+23.21 EUR
30+23.09 EUR
Mindestbestellmenge: 3
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IXFH10N100P IXFH10N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECCF1314CB18BF&compId=IXFH10N100P.pdf?ci_sign=7f7b7c35add8447660ce7a497e76d475f7220bfa Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 10A
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Power dissipation: 380W
Polarisation: unipolar
Gate charge: 56nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
auf Bestellung 330 Stücke:
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8+9.14 EUR
11+6.64 EUR
30+6.48 EUR
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PLB150S PLB150S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7960C7&compId=PLB150.pdf?ci_sign=e6a835b33cf7bbb6db157533fe16deb901f9ab13 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
On-state resistance: 7Ω
Turn-on time: 1ms
Turn-off time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP6
auf Bestellung 32 Stücke:
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9+8.67 EUR
15+4.92 EUR
16+4.65 EUR
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IXTP05N100M IXTP05N100M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B495AF820&compId=IXTP05N100M.pdf?ci_sign=22dedd1505f2893fd7c4f30fd914ac61d85a74fc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.7A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Features of semiconductor devices: standard power mosfet
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IXYA50N65C3 IXYA50N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9C092733F78BF&compId=IXY_50N65C3.pdf?ci_sign=9e5ac7cc0270dee769cf17451458be3d02b0bb9a Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
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IXYH50N65C3 IXYH50N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9C092733F78BF&compId=IXY_50N65C3.pdf?ci_sign=9e5ac7cc0270dee769cf17451458be3d02b0bb9a Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
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IXYH50N65C3D1 IXYH50N65C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA99A964DD41820&compId=IXYH50N65C3D1.pdf?ci_sign=db15a784f69e2c7f93edb1f3c8b2b0b8e36ac44c Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
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IXYP50N65C3 IXYP50N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9C092733F78BF&compId=IXY_50N65C3.pdf?ci_sign=9e5ac7cc0270dee769cf17451458be3d02b0bb9a Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
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IXTX120P20T IXTX120P20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EA563468D18BF&compId=IXT_120P20T.pdf?ci_sign=b303308099e4550f537d8d87d7d46f104218dd25 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Mounting: THT
Case: PLUS247™
Reverse recovery time: 300ns
Drain-source voltage: -200V
Drain current: -120A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 740nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 28 Stücke:
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3+28.13 EUR
10+27.04 EUR
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IXGX320N60B3 IXGX320N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3FAC0877D7820&compId=IXGK(x)320N60B3.pdf?ci_sign=7f3fb659fb9326cceb8b246edbd061c9df14d441 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 1.7kW
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate charge: 585nC
Turn-on time: 107ns
Turn-off time: 595ns
Collector current: 320A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
auf Bestellung 1 Stücke:
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IXFA34N65X2 IXFA34N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9405C1609820&compId=IXFA34N65X2.pdf?ci_sign=2925d4e0e806409ff82e30397fb37dc4d7cc660b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
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IXFH34N65X2 IXFH34N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB353D0CCAB8BF&compId=IXF_34N65X2.pdf?ci_sign=be7eb96a01584ff699e1ad5c4f717dbfd125b3d5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Technology: HiPerFET™; X2-Class
auf Bestellung 191 Stücke:
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10+7.94 EUR
12+6.06 EUR
120+5.83 EUR
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IXFP34N65X3 IXFP34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfp34n65x3-datasheet?assetguid=b8b82367-8165-4fdb-9be0-fbb097cfcc0b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTA24N65X2 IXTA24N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC5FF44FC238BF&compId=IXT_24N65X2.pdf?ci_sign=ca1ded67daf9910d4f25da90b1a96f8fc87d8744 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
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IXTA34N65X2 IXTA34N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC82B820&compId=IXTA34N65X2.pdf?ci_sign=0f26d130d1b2a8e9a14977ffb4f2cc94ed0afebc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXTH34N65X2 IXTH34N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99396442E3226F8BF&compId=IXT_34N65X2.pdf?ci_sign=0ea056e8008ffbda4aac0eaac650eb7fba1e7e65 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
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IXTP24N65X2 IXTP24N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC5FF44FC238BF&compId=IXT_24N65X2.pdf?ci_sign=ca1ded67daf9910d4f25da90b1a96f8fc87d8744 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
auf Bestellung 34 Stücke:
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9+8.34 EUR
16+4.59 EUR
17+4.33 EUR
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IXTN90P20P IXTN90P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE7979492C3F64C2748&compId=IXTN90P20P.pdf?ci_sign=a8e50718a247f46e2906074292bba4b1736a5cc4 Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A
Case: SOT227B
Mechanical mounting: screw
Gate charge: 205nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: -270A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Reverse recovery time: 315ns
Drain-source voltage: -200V
Drain current: -90A
On-state resistance: 44mΩ
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
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IXTP90N055T2 IXTP90N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D3811CE45AD820&compId=IXTA(I%2CP%2CY)90N055T2.pdf?ci_sign=83350302222346af53b5f252798d3bbf488768ce Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Features of semiconductor devices: thrench gate power mosfet
Drain-source voltage: 55V
Drain current: 90A
Gate charge: 42nC
Reverse recovery time: 37ns
On-state resistance: 8.4mΩ
Power dissipation: 150W
Polarisation: unipolar
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
auf Bestellung 292 Stücke:
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19+3.93 EUR
41+1.76 EUR
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IXTR90P20P IXTR90P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9ECF7A318A98BF&compId=IXTR90P20P.pdf?ci_sign=942ad135bc912fcff17afb282f35d9dde220eba2 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Drain-source voltage: -200V
Drain current: -53A
Gate charge: 205nC
Reverse recovery time: 315ns
On-state resistance: 48mΩ
Power dissipation: 312W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: ISOPLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
auf Bestellung 29 Stücke:
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8+10.2 EUR
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IXFN26N100P IXFN26N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7491E14C33820&compId=IXFN26N100P.pdf?ci_sign=bdfeb01acf554089de2652a27d870b4b6759604a Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 390mΩ
Pulsed drain current: 65A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 197nC
Reverse recovery time: 300ns
Kind of channel: enhancement
auf Bestellung 6 Stücke:
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2+38.08 EUR
3+38.07 EUR
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IXYH85N120A4 IXYH85N120A4 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA0CD382CD8D300C7&compId=IXYH85N120A4.pdf?ci_sign=61e5d136f2539dc00a0b2f5a7ad7b627ab9db0cb Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 85A; 1.15kW; TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 73ns
Gate charge: 200nC
Turn-off time: 990ns
Collector current: 85A
Gate-emitter voltage: ±20V
Pulsed collector current: 520A
Power dissipation: 1.15kW
Collector-emitter voltage: 1.2kV
Technology: GenX4™; Trench™; XPT™
Type of transistor: IGBT
Case: TO247-3
Produkt ist nicht verfügbar
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CS20-16IO1 CS20-16IO1 IXYS pVersion=0046&contRep=ZT&docId=E292046039B551F19A99005056AB752F&compId=CS20-16io1.pdf?ci_sign=95c12d052541e46b28cebba100206ceabee4e7ba pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1B88BBD0CDE27&compId=CS20-12IO1-DTE.pdf?ci_sign=fcbd17d89975b06ad5699722969e844947c99a4f Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Case: TO247AD
Max. off-state voltage: 1.6kV
Max. load current: 31A
Load current: 20A
Gate current: 50mA
Max. forward impulse current: 260A
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
auf Bestellung 155 Stücke:
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11+6.98 EUR
14+5.13 EUR
15+4.85 EUR
20+4.66 EUR
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MCD44-12IO1B MCD44-12IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFE07B6403440C4&compId=MCD44-12io1B.pdf?ci_sign=1b3aa2724d956d6eb5fa398b58d591e43dd7c413 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Type of semiconductor module: diode-thyristor
Max. off-state voltage: 1.2kV
Max. load current: 77A
Max. forward voltage: 1.34V
Load current: 49A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
auf Bestellung 49 Stücke:
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3+27.36 EUR
36+26.9 EUR
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MCD72-12IO1B MCD72-12IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFF9B22E1AFE0C4&compId=MCD72-12io1B.pdf?ci_sign=78615c6c39c9ae2e9df718e0a197cb0e2079bdab pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Max. off-state voltage: 1.2kV
Load current: 85A
Max. forward impulse current: 1.7kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.34V
Threshold on-voltage: 0.85V
Max. load current: 133A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
auf Bestellung 18 Stücke:
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2+36.45 EUR
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IXGK120N120A3 IXGK120N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADE298DEDCD820&compId=IXGK(x)120N120A3.pdf?ci_sign=c7a8186a489035ec0ead3df55bd4f31bb6ed73dd Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 830W
Case: TO264
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-off time: 1365ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 600A
Turn-on time: 105ns
Produkt ist nicht verfügbar
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IXGK120N120B3 IXGK120N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADE7EA92E47820&compId=IXGK(x)120N120B3.pdf?ci_sign=66d03d7a35e3abfe1e2dfa50266727cc891d888d Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 830W
Case: TO264
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-off time: 885ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 370A
Turn-on time: 122ns
Produkt ist nicht verfügbar
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IXYK120N120C3 IXYK120N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADF8429ADAB820&compId=IXYK(x)120N120C3.pdf?ci_sign=2816af6dfd2bdc776f9cb1060346c96b4d57c1e0 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: TO264
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-off time: 346ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 700A
Turn-on time: 105ns
auf Bestellung 40 Stücke:
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3+31.7 EUR
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IXYX120N120B3 IXYX120N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADFBCCF8BE3820&compId=IXYX120N120B3.pdf?ci_sign=29d193d35ac59a9ca5d54f9ed1b3d837837fd1b1 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-off time: 826ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 800A
Turn-on time: 84ns
auf Bestellung 28 Stücke:
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3+31.06 EUR
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IXYX120N120C3 IXYX120N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADF8429ADAB820&compId=IXYK(x)120N120C3.pdf?ci_sign=2816af6dfd2bdc776f9cb1060346c96b4d57c1e0 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-off time: 346ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 700A
Turn-on time: 105ns
auf Bestellung 13 Stücke:
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3+33.53 EUR
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MMIX1G120N120A3V1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE059161B39820&compId=MMIX1G120N120A3V1.pdf?ci_sign=ca00727da0a846fcc14b17f244a4389dd779232d Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Power dissipation: 400W
Case: SMPD
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Turn-off time: 1365ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 105A
Pulsed collector current: 700A
Turn-on time: 105ns
Produkt ist nicht verfügbar
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IX4340UE IX4340UE IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D86254426D5D8BF&compId=IX4340.pdf?ci_sign=560a08df3f47fc5e55b105888745757deeb6a350 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
auf Bestellung 1777 Stücke:
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34+2.12 EUR
57+1.27 EUR
92+0.78 EUR
98+0.74 EUR
560+0.71 EUR
Mindestbestellmenge: 34
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IX4340UETR IX4340UETR IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
Produkt ist nicht verfügbar
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IXTA26P20P IXTA26P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263
Reverse recovery time: 240ns
Drain-source voltage: -200V
Drain current: -26A
On-state resistance: 0.17Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 56nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.65 EUR
12+5.96 EUR
13+5.65 EUR
50+5.46 EUR
100+5.43 EUR
Mindestbestellmenge: 9
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IXTH26P20P IXTH26P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 56nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 240ns
Drain-source voltage: -200V
Drain current: -26A
On-state resistance: 0.17Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXTH48P20P IXTH48P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EE75E673818BF&compId=IXT_48P20P.pdf?ci_sign=fc96b5e643c79bc0d735ec6275c107be6971544e Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 103nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 260ns
Drain-source voltage: -200V
Drain current: -48A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 462W
Polarisation: unipolar
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.71 EUR
7+10.42 EUR
8+9.85 EUR
30+9.48 EUR
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IXTP26P20P IXTP26P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Gate charge: 56nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 240ns
Drain-source voltage: -200V
Drain current: -26A
On-state resistance: 0.17Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.24 EUR
13+5.58 EUR
14+5.28 EUR
50+5.11 EUR
100+5.08 EUR
Mindestbestellmenge: 9
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IXTQ26P20P IXTQ26P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Gate charge: 56nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 240ns
Drain-source voltage: -200V
Drain current: -26A
On-state resistance: 0.17Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXTR48P20P IXTR48P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00147810378BF&compId=IXTR48P20P.pdf?ci_sign=6ecb22dd6fd6b0673f62f8c7c5cf3402e6ec1242 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Gate charge: 103nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 260ns
Drain-source voltage: -200V
Drain current: -30A
On-state resistance: 93mΩ
Type of transistor: P-MOSFET
Power dissipation: 190W
Polarisation: unipolar
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
8+10.12 EUR
10+7.49 EUR
Mindestbestellmenge: 8
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IXTT48P20P IXTT48P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EE75E673818BF&compId=IXT_48P20P.pdf?ci_sign=fc96b5e643c79bc0d735ec6275c107be6971544e Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Gate charge: 103nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 260ns
Drain-source voltage: -200V
Drain current: -48A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 462W
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXGK55N120A3H1 IXGK55N120A3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD6CE88C967820&compId=IXGK(X)55N120A3H1.pdf?ci_sign=71c157a42906878436bf546790bc3e7783e519ba Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264
Mounting: THT
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 185nC
Technology: GenX3™; PT
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 55A
Pulsed collector current: 400A
Turn-on time: 70ns
Turn-off time: 1253ns
Produkt ist nicht verfügbar
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IXFR24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2857DA3FF1A1820&compId=IXFR24N80P.pdf?ci_sign=873856e0e863a27e19dde25c672bc74899b0f721
IXFR24N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX34N80 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5531C0BEB820&compId=IXFK(X)34N80.pdf?ci_sign=c21449cd8db7a186cc87835ff14b3420826840c0
IXFX34N80
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX44N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55A88536A9820&compId=IXFK(X)44N80P.pdf?ci_sign=fe7a22c35d7909b220aeebf7fe0c0b6a1d419d2d
IXFX44N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CPC1972G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AF084E0C7&compId=CPC1972.pdf?ci_sign=ad681fe35f2cbf4725519c25a38bae72b51c2f77
CPC1972G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
auf Bestellung 541 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.7 EUR
47+1.53 EUR
55+1.3 EUR
59+1.23 EUR
Mindestbestellmenge: 43
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IXTP08N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D5010345B820&compId=IXTA(P%2CY)08N100D2.pdf?ci_sign=ff8d8aff111d8414478644545169c45d10c4ed47
IXTP08N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 21Ω
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Kind of channel: depletion
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.15 EUR
35+2.09 EUR
37+1.97 EUR
Mindestbestellmenge: 18
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IXFP44N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf.pdf
IXFP44N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: THT
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 66A
Case: TO220AB
Reverse recovery time: 87ns
Drain-source voltage: 250V
Drain current: 44A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXTT64N25P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CE00FFAAFE27&compId=IXTQ64N25P-DTE.pdf?ci_sign=8629d9d38dc4d997f8392b5cabb1618306ba9fab
IXTT64N25P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO268
Mounting: SMD
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Gate charge: 105nC
Technology: PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO268
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 64A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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CPC1394GR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320045E0C7&compId=CPC1394.pdf?ci_sign=d7d0c6af5a4e35ec08801baf972a55daaba17e76
CPC1394GR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 40Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 3ms
Kind of output: MOSFET
auf Bestellung 2101 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.85 EUR
33+2.19 EUR
35+2.07 EUR
500+2.03 EUR
Mindestbestellmenge: 19
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CPC1394GV pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320045E0C7&compId=CPC1394.pdf?ci_sign=d7d0c6af5a4e35ec08801baf972a55daaba17e76
CPC1394GV
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 5ms
On-state resistance: 40Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
auf Bestellung 452 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.85 EUR
33+2.19 EUR
35+2.07 EUR
Mindestbestellmenge: 19
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IXFK78N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D410DC139CF820&compId=IXFK(X)78N50P3.pdf?ci_sign=5f610dbd75428f65aab0cd1f86573c38c778a434
IXFK78N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: TO264
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.35 EUR
6+12.63 EUR
Mindestbestellmenge: 4
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IXFK98N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D35AB462127820&compId=IXFK(X)98N50P3.pdf?ci_sign=503a48a7a9f46ebf3b6b7f092e5d7520b9bd3c32
IXFK98N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX78N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D410DC139CF820&compId=IXFK(X)78N50P3.pdf?ci_sign=5f610dbd75428f65aab0cd1f86573c38c778a434
IXFX78N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX98N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D35AB462127820&compId=IXFK(X)98N50P3.pdf?ci_sign=503a48a7a9f46ebf3b6b7f092e5d7520b9bd3c32
IXFX98N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.25 EUR
5+15.56 EUR
Mindestbestellmenge: 4
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DSB15IM45IB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9DE16ECF1B8BF&compId=DSB15IM45IB.pdf?ci_sign=111fdfb47a0ed9e4fcc4c5a565d872868ea000e5
DSB15IM45IB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.55V; 70W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: TO262
Max. forward voltage: 0.55V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
auf Bestellung 494 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
166+0.43 EUR
171+0.42 EUR
176+0.41 EUR
178+0.4 EUR
250+0.39 EUR
Mindestbestellmenge: 157
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IXFN210N30P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF91C31173D1820&compId=IXFN210N30P3.pdf?ci_sign=822d8ac666dc943cca774a0528aebea732c66ae7
IXFN210N30P3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 192A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14.5mΩ
Pulsed drain current: 550A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar3™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 268nC
Reverse recovery time: 250ns
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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MCMA35PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD8104FC036B00C4&compId=MCMA35PD1600TB.pdf?ci_sign=55ae504df2d82c6c04ccd8c02f974e8b0f361824 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCMA35PD1600TB
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Max. off-state voltage: 1.6kV
Load current: 35A
Max. forward impulse current: 520A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.22V
Threshold on-voltage: 0.87V
Max. load current: 55A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 78/200mA
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+26.77 EUR
10+25.74 EUR
Mindestbestellmenge: 3
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MCD132-08io1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B8ECB0EE1D388143&compId=MCD132-08io1.pdf?ci_sign=4343034c745f825e4fdd0005efd4f09ce7a057f3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 0.8kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH16N80P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBE3876A2C78BF&compId=IXFH16N80P.pdf?ci_sign=d439feac37a891fbe96fd8303945e86c880ee0ca
IXFH16N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT16N80P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBE3876A2C78BF&compId=IXFH16N80P.pdf?ci_sign=d439feac37a891fbe96fd8303945e86c880ee0ca
IXFT16N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFX27N80Q pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd
IXFX27N80Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.55 EUR
4+23.21 EUR
30+23.09 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFH10N100P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECCF1314CB18BF&compId=IXFH10N100P.pdf?ci_sign=7f7b7c35add8447660ce7a497e76d475f7220bfa
IXFH10N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 10A
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Power dissipation: 380W
Polarisation: unipolar
Gate charge: 56nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
auf Bestellung 330 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.14 EUR
11+6.64 EUR
30+6.48 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
PLB150S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7960C7&compId=PLB150.pdf?ci_sign=e6a835b33cf7bbb6db157533fe16deb901f9ab13
PLB150S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
On-state resistance: 7Ω
Turn-on time: 1ms
Turn-off time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Mounting: SMT
Case: DIP6
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.67 EUR
15+4.92 EUR
16+4.65 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXTP05N100M pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B495AF820&compId=IXTP05N100M.pdf?ci_sign=22dedd1505f2893fd7c4f30fd914ac61d85a74fc
IXTP05N100M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.7A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYA50N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9C092733F78BF&compId=IXY_50N65C3.pdf?ci_sign=9e5ac7cc0270dee769cf17451458be3d02b0bb9a
IXYA50N65C3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH50N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9C092733F78BF&compId=IXY_50N65C3.pdf?ci_sign=9e5ac7cc0270dee769cf17451458be3d02b0bb9a
IXYH50N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
Produkt ist nicht verfügbar
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IXYH50N65C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA99A964DD41820&compId=IXYH50N65C3D1.pdf?ci_sign=db15a784f69e2c7f93edb1f3c8b2b0b8e36ac44c
IXYH50N65C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYP50N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9C092733F78BF&compId=IXY_50N65C3.pdf?ci_sign=9e5ac7cc0270dee769cf17451458be3d02b0bb9a
IXYP50N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTX120P20T pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EA563468D18BF&compId=IXT_120P20T.pdf?ci_sign=b303308099e4550f537d8d87d7d46f104218dd25
IXTX120P20T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Mounting: THT
Case: PLUS247™
Reverse recovery time: 300ns
Drain-source voltage: -200V
Drain current: -120A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 740nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+28.13 EUR
10+27.04 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXGX320N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3FAC0877D7820&compId=IXGK(x)320N60B3.pdf?ci_sign=7f3fb659fb9326cceb8b246edbd061c9df14d441
IXGX320N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 1.7kW
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate charge: 585nC
Turn-on time: 107ns
Turn-off time: 595ns
Collector current: 320A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFA34N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9405C1609820&compId=IXFA34N65X2.pdf?ci_sign=2925d4e0e806409ff82e30397fb37dc4d7cc660b
IXFA34N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXFH34N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB353D0CCAB8BF&compId=IXF_34N65X2.pdf?ci_sign=be7eb96a01584ff699e1ad5c4f717dbfd125b3d5
IXFH34N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Technology: HiPerFET™; X2-Class
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.94 EUR
12+6.06 EUR
120+5.83 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXFP34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfp34n65x3-datasheet?assetguid=b8b82367-8165-4fdb-9be0-fbb097cfcc0b
IXFP34N65X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTA24N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC5FF44FC238BF&compId=IXT_24N65X2.pdf?ci_sign=ca1ded67daf9910d4f25da90b1a96f8fc87d8744
IXTA24N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
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IXTA34N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC82B820&compId=IXTA34N65X2.pdf?ci_sign=0f26d130d1b2a8e9a14977ffb4f2cc94ed0afebc
IXTA34N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXTH34N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE99396442E3226F8BF&compId=IXT_34N65X2.pdf?ci_sign=0ea056e8008ffbda4aac0eaac650eb7fba1e7e65
IXTH34N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP24N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC5FF44FC238BF&compId=IXT_24N65X2.pdf?ci_sign=ca1ded67daf9910d4f25da90b1a96f8fc87d8744
IXTP24N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.34 EUR
16+4.59 EUR
17+4.33 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXTN90P20P pVersion=0046&contRep=ZT&docId=005056AB752F1EE7979492C3F64C2748&compId=IXTN90P20P.pdf?ci_sign=a8e50718a247f46e2906074292bba4b1736a5cc4
IXTN90P20P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A
Case: SOT227B
Mechanical mounting: screw
Gate charge: 205nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: -270A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Reverse recovery time: 315ns
Drain-source voltage: -200V
Drain current: -90A
On-state resistance: 44mΩ
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Produkt ist nicht verfügbar
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IXTP90N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D3811CE45AD820&compId=IXTA(I%2CP%2CY)90N055T2.pdf?ci_sign=83350302222346af53b5f252798d3bbf488768ce
IXTP90N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Features of semiconductor devices: thrench gate power mosfet
Drain-source voltage: 55V
Drain current: 90A
Gate charge: 42nC
Reverse recovery time: 37ns
On-state resistance: 8.4mΩ
Power dissipation: 150W
Polarisation: unipolar
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
41+1.76 EUR
44+1.66 EUR
Mindestbestellmenge: 19
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IXTR90P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9ECF7A318A98BF&compId=IXTR90P20P.pdf?ci_sign=942ad135bc912fcff17afb282f35d9dde220eba2
IXTR90P20P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Drain-source voltage: -200V
Drain current: -53A
Gate charge: 205nC
Reverse recovery time: 315ns
On-state resistance: 48mΩ
Power dissipation: 312W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: ISOPLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.2 EUR
Mindestbestellmenge: 8
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IXFN26N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7491E14C33820&compId=IXFN26N100P.pdf?ci_sign=bdfeb01acf554089de2652a27d870b4b6759604a
IXFN26N100P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 390mΩ
Pulsed drain current: 65A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 197nC
Reverse recovery time: 300ns
Kind of channel: enhancement
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+38.08 EUR
3+38.07 EUR
Mindestbestellmenge: 2
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IXYH85N120A4 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA0CD382CD8D300C7&compId=IXYH85N120A4.pdf?ci_sign=61e5d136f2539dc00a0b2f5a7ad7b627ab9db0cb
IXYH85N120A4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 85A; 1.15kW; TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 73ns
Gate charge: 200nC
Turn-off time: 990ns
Collector current: 85A
Gate-emitter voltage: ±20V
Pulsed collector current: 520A
Power dissipation: 1.15kW
Collector-emitter voltage: 1.2kV
Technology: GenX4™; Trench™; XPT™
Type of transistor: IGBT
Case: TO247-3
Produkt ist nicht verfügbar
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CS20-16IO1 pVersion=0046&contRep=ZT&docId=E292046039B551F19A99005056AB752F&compId=CS20-16io1.pdf?ci_sign=95c12d052541e46b28cebba100206ceabee4e7ba pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1B88BBD0CDE27&compId=CS20-12IO1-DTE.pdf?ci_sign=fcbd17d89975b06ad5699722969e844947c99a4f
CS20-16IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Case: TO247AD
Max. off-state voltage: 1.6kV
Max. load current: 31A
Load current: 20A
Gate current: 50mA
Max. forward impulse current: 260A
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.98 EUR
14+5.13 EUR
15+4.85 EUR
20+4.66 EUR
Mindestbestellmenge: 11
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MCD44-12IO1B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFE07B6403440C4&compId=MCD44-12io1B.pdf?ci_sign=1b3aa2724d956d6eb5fa398b58d591e43dd7c413 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCD44-12IO1B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Type of semiconductor module: diode-thyristor
Max. off-state voltage: 1.2kV
Max. load current: 77A
Max. forward voltage: 1.34V
Load current: 49A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+27.36 EUR
36+26.9 EUR
Mindestbestellmenge: 3
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MCD72-12IO1B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFF9B22E1AFE0C4&compId=MCD72-12io1B.pdf?ci_sign=78615c6c39c9ae2e9df718e0a197cb0e2079bdab pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCD72-12IO1B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Max. off-state voltage: 1.2kV
Load current: 85A
Max. forward impulse current: 1.7kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.34V
Threshold on-voltage: 0.85V
Max. load current: 133A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+36.45 EUR
Mindestbestellmenge: 2
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IXGK120N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADE298DEDCD820&compId=IXGK(x)120N120A3.pdf?ci_sign=c7a8186a489035ec0ead3df55bd4f31bb6ed73dd
IXGK120N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 830W
Case: TO264
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-off time: 1365ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 600A
Turn-on time: 105ns
Produkt ist nicht verfügbar
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IXGK120N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADE7EA92E47820&compId=IXGK(x)120N120B3.pdf?ci_sign=66d03d7a35e3abfe1e2dfa50266727cc891d888d
IXGK120N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 830W
Case: TO264
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-off time: 885ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 370A
Turn-on time: 122ns
Produkt ist nicht verfügbar
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IXYK120N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADF8429ADAB820&compId=IXYK(x)120N120C3.pdf?ci_sign=2816af6dfd2bdc776f9cb1060346c96b4d57c1e0
IXYK120N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: TO264
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-off time: 346ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 700A
Turn-on time: 105ns
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+31.7 EUR
Mindestbestellmenge: 3
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IXYX120N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADFBCCF8BE3820&compId=IXYX120N120B3.pdf?ci_sign=29d193d35ac59a9ca5d54f9ed1b3d837837fd1b1
IXYX120N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-off time: 826ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 800A
Turn-on time: 84ns
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+31.06 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXYX120N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADF8429ADAB820&compId=IXYK(x)120N120C3.pdf?ci_sign=2816af6dfd2bdc776f9cb1060346c96b4d57c1e0
IXYX120N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-off time: 346ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 700A
Turn-on time: 105ns
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+33.53 EUR
Mindestbestellmenge: 3
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MMIX1G120N120A3V1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE059161B39820&compId=MMIX1G120N120A3V1.pdf?ci_sign=ca00727da0a846fcc14b17f244a4389dd779232d
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Power dissipation: 400W
Case: SMPD
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Turn-off time: 1365ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 105A
Pulsed collector current: 700A
Turn-on time: 105ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IX4340UE pVersion=0046&contRep=ZT&docId=005056AB82531EE98D86254426D5D8BF&compId=IX4340.pdf?ci_sign=560a08df3f47fc5e55b105888745757deeb6a350
IX4340UE
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
auf Bestellung 1777 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.12 EUR
57+1.27 EUR
92+0.78 EUR
98+0.74 EUR
560+0.71 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IX4340UETR
IX4340UETR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
Produkt ist nicht verfügbar
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IXTA26P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87
IXTA26P20P
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263
Reverse recovery time: 240ns
Drain-source voltage: -200V
Drain current: -26A
On-state resistance: 0.17Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 56nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.65 EUR
12+5.96 EUR
13+5.65 EUR
50+5.46 EUR
100+5.43 EUR
Mindestbestellmenge: 9
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IXTH26P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87
IXTH26P20P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 56nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 240ns
Drain-source voltage: -200V
Drain current: -26A
On-state resistance: 0.17Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH48P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EE75E673818BF&compId=IXT_48P20P.pdf?ci_sign=fc96b5e643c79bc0d735ec6275c107be6971544e
IXTH48P20P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 103nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 260ns
Drain-source voltage: -200V
Drain current: -48A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 462W
Polarisation: unipolar
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.71 EUR
7+10.42 EUR
8+9.85 EUR
30+9.48 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXTP26P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87
IXTP26P20P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Gate charge: 56nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 240ns
Drain-source voltage: -200V
Drain current: -26A
On-state resistance: 0.17Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.24 EUR
13+5.58 EUR
14+5.28 EUR
50+5.11 EUR
100+5.08 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ26P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87
IXTQ26P20P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Gate charge: 56nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 240ns
Drain-source voltage: -200V
Drain current: -26A
On-state resistance: 0.17Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTR48P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00147810378BF&compId=IXTR48P20P.pdf?ci_sign=6ecb22dd6fd6b0673f62f8c7c5cf3402e6ec1242
IXTR48P20P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Gate charge: 103nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 260ns
Drain-source voltage: -200V
Drain current: -30A
On-state resistance: 93mΩ
Type of transistor: P-MOSFET
Power dissipation: 190W
Polarisation: unipolar
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.12 EUR
10+7.49 EUR
Mindestbestellmenge: 8
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IXTT48P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EE75E673818BF&compId=IXT_48P20P.pdf?ci_sign=fc96b5e643c79bc0d735ec6275c107be6971544e
IXTT48P20P
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Gate charge: 103nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 260ns
Drain-source voltage: -200V
Drain current: -48A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 462W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGK55N120A3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD6CE88C967820&compId=IXGK(X)55N120A3H1.pdf?ci_sign=71c157a42906878436bf546790bc3e7783e519ba
IXGK55N120A3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264
Mounting: THT
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 185nC
Technology: GenX3™; PT
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 55A
Pulsed collector current: 400A
Turn-on time: 70ns
Turn-off time: 1253ns
Produkt ist nicht verfügbar
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