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DSSK50-01A DSSK50-01A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CBA9C5A1EF58BF&compId=DSSK50-01A.pdf?ci_sign=e9423c14aa2226699a302afb9f9e202d790a5f31 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.65V
Max. forward impulse current: 0.45kA
Kind of package: tube
Power dissipation: 135W
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.26 EUR
13+5.51 EUR
Mindestbestellmenge: 12
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MCMA120UJ1800ED MCMA120UJ1800ED IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F396F01FCBC0C4&compId=MCMA120UJ1800ED.pdf?ci_sign=ed29dbc111df95f6c7ded27cde6830766c074f30 Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.8kV; If: 120A; E2-Pack
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.8kV
Load current: 120A
Max. forward impulse current: 0.5kA
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Case: E2-Pack
Max. forward voltage: 1.36V
Gate current: 70/150mA
Features of semiconductor devices: freewheelling diode
auf Bestellung 6 Stücke:
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1+94.74 EUR
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IX4310N IX4310N IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
auf Bestellung 1672 Stücke:
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38+1.9 EUR
62+1.16 EUR
73+0.98 EUR
125+0.57 EUR
133+0.54 EUR
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IXTN110N20L2 IXTN110N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8D4C2C0D3B820&compId=IXTN110N20L2.pdf?ci_sign=22d1ef7a7256a11bcc8df888639ad4005a52d7b3 Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 420ns
Electrical mounting: screw
Mechanical mounting: screw
Technology: Linear L2™
Semiconductor structure: single transistor
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IXTK110N20L2 IXTK110N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9939600E0EFF298BF&compId=IXT_110N20L2.pdf?ci_sign=2efcd7c71b9a3d0ca4fa8423b4cac407d61b052b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
Features of semiconductor devices: linear power mosfet
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IXFT120N15P IXFT120N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHT™
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.54 EUR
9+8.41 EUR
Mindestbestellmenge: 6
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OMA160 OMA160 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2699C0C7&compId=OMA160.pdf?ci_sign=81480a08d275770b533880aac2266f2ea5be6c1b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 125µs
Turn-off time: 125µs
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.19 EUR
23+3.12 EUR
25+2.95 EUR
Mindestbestellmenge: 14
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CPC1010N CPC1010N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75180C7&compId=CPC1010N.pdf?ci_sign=41135da2a176468c7114dc43db7a3f64404be7d4 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 11.5Ω
Case: SOP4
Mounting: SMT
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CPC1010NTR CPC1010NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75180C7&compId=CPC1010N.pdf?ci_sign=41135da2a176468c7114dc43db7a3f64404be7d4 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 11.5Ω
Case: SOP4
Mounting: SMT
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IXFH120N15P IXFH120N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.81 EUR
9+8.22 EUR
10+7.78 EUR
120+7.48 EUR
Mindestbestellmenge: 7
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VUB160-16NOXT VUB160-16NOXT IXYS VUB160-16NOX.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 695W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: V2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Power dissipation: 695W
Technology: X2PT
Mechanical mounting: screw
auf Bestellung 1 Stücke:
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1+115.87 EUR
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CPC1020NTR CPC1020NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75960C7&compId=CPC1020N.pdf?ci_sign=96f62284072c1fad21550f35e7a4e26a55ed445d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Switched voltage: max. 30V AC; max. 30V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Type of relay: solid state
Relay variant: current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 0.25Ω
Case: SOP4
Mounting: SMT
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CPC1025NTR CPC1025NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75AA0C7&compId=CPC1025N.pdf?ci_sign=262d69aeff98f8d3fd7ed3ae0d6bdac22dcb08db Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Switched voltage: max. 400V AC; max. 400V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 30Ω
Case: SOP4
Mounting: SMT
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CPC1019NTR CPC1019NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75800C7&compId=CPC1019N.pdf?ci_sign=1456f68612229fb12531626e0e32c9f25964cac3 Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Switched voltage: max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 750mA
Type of relay: solid state
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 0.6Ω
Case: SOP4
Mounting: SMT
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CPC1004NTR CPC1004NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42900C7&compId=CPC1004N.pdf?ci_sign=c2ff74f63a010424db623c4e5b6a3f4c09119d56 Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Switched voltage: max. 100V DC
Operating temperature: -40...110°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 300mA
Type of relay: solid state
Relay variant: current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 1ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 4Ω
Case: SOP4
Mounting: SMT
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CPC1009NTR CPC1009NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75020C7&compId=CPC1009N.pdf?ci_sign=f40f58f0e387932488df77283d620ba8e67b04b1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 0.5ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 8Ω
Case: SOP4
Mounting: SMT
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CPC1030NTR CPC1030NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75BE0C7&compId=CPC1030N.pdf?ci_sign=f5306a3547ebea4ac3441d82e07f700914fb2e7d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1001NTR CPC1001NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4918F5536A0C7&compId=CPC1001N.pdf?ci_sign=fed221f1ce6717152996c4670d54d917b333a1f1 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Switched voltage: max. 30V DC
Operating temperature: -40...85°C
CTR@If: 100-800%@0.2mA
Max. operating current: 0.1A
Insulation voltage: 1.5kV
Kind of output: transistor
Number of channels: 1
Turn-off time: 30µs
Turn-on time: 1µs
Control current max.: 5mA
Case: SOP4
Type of optocoupler: optocoupler
Mounting: SMD
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CPC1006NTR CPC1006NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42A60C7&compId=CPC1006N.pdf?ci_sign=72d41b7324042777116a851719d9e0f28d3ef419 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Switched voltage: max. 60V AC; max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 75mA
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 10ms
Turn-on time: 10ms
Control current max.: 50mA
On-state resistance: 10Ω
Case: SOP4
Mounting: SMT
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IXFN400N15X3 IXFN400N15X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8C41411F51820&compId=IXFN400N15X3.pdf?ci_sign=13beb68d32a85f3cbcfc07159506072e1f87ebdc Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 400A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 400A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.5mΩ
Pulsed drain current: 900A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 365nC
Reverse recovery time: 132ns
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
2+52.51 EUR
Mindestbestellmenge: 2
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DSEP60-12A DSEP60-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEED68314162143&compId=DSEP60-12A.pdf?ci_sign=4a7fc7a2560391c6c87bbd840d34293d102b5d7c Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.81V
Power dissipation: 330W
Reverse recovery time: 40ns
Technology: HiPerFRED™
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.48 EUR
8+8.94 EUR
9+8.45 EUR
30+8.17 EUR
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DSEP60-12AR DSEP60-12AR IXYS Littelfuse-Power-Semiconductors-DSEP60-12AR-Datasheet?assetguid=10cd7d84-2ee7-4c08-a9c7-b27e7f1dde17 description Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: ISOPLUS247™
Max. forward voltage: 2.66V
Power dissipation: 230W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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IXDN609CI IXDN609CI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 1082 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.63 EUR
25+2.93 EUR
26+2.77 EUR
100+2.66 EUR
Mindestbestellmenge: 16
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IXDD614CI IXDD614CI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 824 Stücke:
Lieferzeit 14-21 Tag (e)
15+5 EUR
17+4.38 EUR
18+4 EUR
50+3.98 EUR
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CPC1706Y CPC1706Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4927C8677A0C7&compId=CPC1706.pdf?ci_sign=9ed605bb3e0989318f6e250694ab09cd9e3ff237 Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; -40÷85°C
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 4A
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 90mΩ
Mounting: THT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.06 EUR
23+3.17 EUR
24+3 EUR
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IXFP12N50P IXFP12N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7AEFCAC3138BF&compId=IXF_12N50P.pdf?ci_sign=3dd36ef8468ec34dac25b7833e04dbc62f9852a3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Kind of channel: enhancement
Drain current: 12A
Drain-source voltage: 500V
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MIXG330PF1200PTSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
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MIXG330PF1200TSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
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DH20-18A DH20-18A IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23249593455EA&compId=DH20-18A.pdf?ci_sign=752292e9c69f0ed0787c1618e087d88fa6115806 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 20A; tube; Ifsm: 150A; TO247-2; 140W
Power dissipation: 140W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Case: TO247-2
Max. off-state voltage: 1.8kV
Max. forward voltage: 2.35V
Load current: 20A
Semiconductor structure: single diode
Reverse recovery time: 300ns
Max. forward impulse current: 150A
auf Bestellung 354 Stücke:
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15+4.86 EUR
16+4.6 EUR
120+4.49 EUR
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CPC5602CTR CPC5602CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A6668BB1AE38BF&compId=CPC5602.pdf?ci_sign=1ab99acd3aab3a1662bfc24a628f4deff77adc0a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
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DSEK60-12A DSEK60-12A IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26Ax2; tube; Ifsm: 200A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.55V
Power dissipation: 125W
Reverse recovery time: 40ns
Technology: FRED
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7+10.55 EUR
8+8.94 EUR
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VHFD37-16IO1 VHFD37-16IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F20DBFE661D820&compId=VHFD37-ser.pdf?ci_sign=2d812ba971aecf8861ab1d3dd43e94b87114da19 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Case: V1-A-Pack
Mechanical mounting: screw
Electrical mounting: FASTON connectors
Leads: connectors
Leads dimensions: 2x0.5mm
Version: module
Load current: 40A
Max. forward impulse current: 280A
Max. off-state voltage: 1.6kV
Gate current: 50/80mA
Type of bridge rectifier: half-controlled
Features of semiconductor devices: field diodes; freewheelling diode
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10+39.04 EUR
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VUO80-12NO1 VUO80-12NO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880439D3F1120C4&compId=VUO80-12NO1.pdf?ci_sign=7a78f58303345089e2463f30d4c91583a53278dd Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
Produkt ist nicht verfügbar
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PLA191S PLA191S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
auf Bestellung 199 Stücke:
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IXTA100N04T2 IXTA100N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E1F1BA8D9820&compId=IXTA(P)100N04T2.pdf?ci_sign=6a88636d3dd1a68af7406b8bccbef80c68bda003 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO263
On-state resistance: 7mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
Produkt ist nicht verfügbar
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IXTN46N50L IXTN46N50L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9230E5AE5F820&compId=IXTN46N50L.pdf?ci_sign=9ab81abbb1adcc6fd1ccf3ad5339605b98bf9c2d Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.16Ω
Gate charge: 260nC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 0.6µs
Semiconductor structure: single transistor
Pulsed drain current: 100A
Type of semiconductor module: MOSFET transistor
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MDMA660U1600PTEH IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1FD092D100ED5523E0E1&compId=MDMA660U1600PTEH.pdf?ci_sign=e72c61a2f37282fa00f16d3953aceaa71a0e1234 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Case: E3-Pack
Mechanical mounting: screw
Electrical mounting: Press-Fit
Version: module
Load current: 660A
Max. forward impulse current: 5kA
Max. off-state voltage: 1.6kV
Type of bridge rectifier: three-phase
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1+195.2 EUR
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IXFT400N075T2 IXFT400N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBC718478C7820&compId=IXFH(T)400N075T2.pdf?ci_sign=1602ac645fb478731e67194e85187b13cbddcb9b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns
Case: TO268
Reverse recovery time: 77ns
Drain-source voltage: 75V
Drain current: 400A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 1kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 420nC
Kind of channel: enhancement
Mounting: SMD
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DSEI30-10A DSEI30-10A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD568A65B4938BF&compId=DSEI30-10A.pdf?ci_sign=852498fdf79c980b238d3a278082ea33068754bc description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 185A
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 138W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 218 Stücke:
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15+4.8 EUR
17+4.22 EUR
19+3.83 EUR
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DPG60C300HB DPG60C300HB IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA828AB16F72C143&compId=DPG60C300HB.pdf?ci_sign=591fb5aa9b5ad9a54b35e26906603b70f7da565b Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 360A
Case: TO247-3
Max. forward voltage: 1.39V
Power dissipation: 160W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
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12+6.49 EUR
13+5.75 EUR
14+5.18 EUR
15+4.89 EUR
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LCA120LS LCA120LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977600C7&compId=LCA120L.pdf?ci_sign=fb673220e7524f26614e617d06afa1cb250d0567 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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LCA120LSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977600C7&compId=LCA120L.pdf?ci_sign=fb673220e7524f26614e617d06afa1cb250d0567 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXFX170N20T IXFX170N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5344B49DB7820&compId=IXFK(X)170N20T.pdf?ci_sign=132d408b08d163a2c5614a95cdf3179fcf883841 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; PLUS247™
Mounting: THT
Case: PLUS247™
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.15kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX170N20P IXFX170N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE7919FF3517E5D4746&compId=IXF_170N20P.pdf?ci_sign=7a8e99d2eb2f7ace504a59de513ff4d7089e5376 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1250W; PLUS247™
Mounting: THT
Case: PLUS247™
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Kind of channel: enhancement
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IXFH120N20P IXFH120N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9869832FD820&compId=IXFH(K)120N20P.pdf?ci_sign=ab9ee0cda8be66ad18abdb1fb39f266891be68ee Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Case: TO247-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 120A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Reverse recovery time: 100ns
Power dissipation: 714W
Polarisation: unipolar
Kind of package: tube
Gate charge: 152nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
auf Bestellung 67 Stücke:
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5+15.32 EUR
7+10.93 EUR
30+10.51 EUR
Mindestbestellmenge: 5
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CPC3701CTR CPC3701CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE7919FFA760F104746&compId=CPC3701.pdf?ci_sign=3b686c50781704a72018b86754c7a8d41bba5ce4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 960 Stücke:
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61+1.19 EUR
89+0.8 EUR
140+0.51 EUR
148+0.48 EUR
500+0.47 EUR
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DPG15I200PA DPG15I200PA IXYS Littelfuse-Power-Semiconductors-DPG15I200PA-Datasheet?assetguid=54180CEE-BE58-4F2E-B23D-CC4C70F44A3F Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 240A; TO220AC; 90W
Case: TO220AC
Max. off-state voltage: 200V
Max. forward voltage: 1.26V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
auf Bestellung 23 Stücke:
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23+3.1 EUR
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IXXH100N60B3 IXXH100N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB4A5F5037D820&compId=IXXH100N60B3.pdf?ci_sign=0b1678af7c3157780613381fd45916184563f06e Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 830W
Turn-off time: 350ns
Turn-on time: 92ns
Kind of package: tube
Case: TO247-3
Pulsed collector current: 480A
Collector current: 100A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Gate charge: 143nC
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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DLA100B1200LB-TUB DLA100B1200LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87FF8D2A340060C4&compId=DLA100B1200LB.pdf?ci_sign=6296754d046772e4fd96965d73e1d8054b583293 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 124A
Max. forward impulse current: 0.4kA
Case: SMPD-B
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.23V
auf Bestellung 39 Stücke:
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4+21.36 EUR
20+21.06 EUR
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IXDN609SI IXDN609SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 1580 Stücke:
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22+3.36 EUR
32+2.25 EUR
34+2.13 EUR
100+2.12 EUR
200+2.04 EUR
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IXDN609SIA IXDN609SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 427 Stücke:
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34+2.12 EUR
47+1.54 EUR
50+1.43 EUR
53+1.36 EUR
100+1.32 EUR
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IXDN609PI IXDN609PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 718 Stücke:
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34+2.12 EUR
46+1.56 EUR
50+1.44 EUR
53+1.36 EUR
100+1.32 EUR
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IXDN609YI IXDN609YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Case: TO263-5
Mounting: SMD
Kind of package: tube
Output current: -9...9A
Type of integrated circuit: driver
Number of channels: 1
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 814 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.69 EUR
27+2.73 EUR
28+2.59 EUR
100+2.49 EUR
Mindestbestellmenge: 20
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IXYH30N65C3 IXYH30N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8FA49F63C7820&compId=IXYH(P)30N65C3.pdf?ci_sign=b199e109e3ab7a2153ecd617407198b811892fd9 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate charge: 44nC
Produkt ist nicht verfügbar
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IXYP30N65C3 IXYP30N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8FA49F63C7820&compId=IXYH(P)30N65C3.pdf?ci_sign=b199e109e3ab7a2153ecd617407198b811892fd9 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Pulsed collector current: 118A
Collector current: 30A
Produkt ist nicht verfügbar
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IXYH30N65C3H1 IXYH30N65C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8173C8A8ADE0C4&compId=IXY_30N65C3H1_HV.pdf?ci_sign=fe90d70eb5a4baa936f0659d92f838d1ceb9cd3a Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Pulsed collector current: 118A
Collector current: 30A
Produkt ist nicht verfügbar
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IXYT30N65C3H1HV IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8173C8A8ADE0C4&compId=IXY_30N65C3H1_HV.pdf?ci_sign=fe90d70eb5a4baa936f0659d92f838d1ceb9cd3a Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Pulsed collector current: 118A
Collector current: 30A
Produkt ist nicht verfügbar
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LF2136BTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F27090BC18C0CE&compId=LF2136BTR.pdf?ci_sign=7d4488ec65212ff10c76d0a7eb8b2083d5f4913f Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Case: SO28
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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PBA150S PBA150S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26AB60C7&compId=PBA150.pdf?ci_sign=95c39d9d73c016e3ffd8e8cb2457778578aa240e Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Case: DIP8
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.72 EUR
11+6.68 EUR
Mindestbestellmenge: 9
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IXGH10N170A IXGH10N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A98EA1E25B38BF&compId=IXG_10N170A.pdf?ci_sign=43009bf67308e8af9bb85474249e61e9278ec252 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Gate-emitter voltage: ±20V
Collector current: 5A
Pulsed collector current: 20A
Turn-on time: 107ns
Turn-off time: 240ns
Type of transistor: IGBT
Power dissipation: 140W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 29nC
Technology: NPT
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.7kV
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
Mindestbestellmenge: 2
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DSSK50-01A pVersion=0046&contRep=ZT&docId=005056AB82531EE991CBA9C5A1EF58BF&compId=DSSK50-01A.pdf?ci_sign=e9423c14aa2226699a302afb9f9e202d790a5f31
DSSK50-01A
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.65V
Max. forward impulse current: 0.45kA
Kind of package: tube
Power dissipation: 135W
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.26 EUR
13+5.51 EUR
Mindestbestellmenge: 12
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MCMA120UJ1800ED pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F396F01FCBC0C4&compId=MCMA120UJ1800ED.pdf?ci_sign=ed29dbc111df95f6c7ded27cde6830766c074f30
MCMA120UJ1800ED
Hersteller: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.8kV; If: 120A; E2-Pack
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.8kV
Load current: 120A
Max. forward impulse current: 0.5kA
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Case: E2-Pack
Max. forward voltage: 1.36V
Gate current: 70/150mA
Features of semiconductor devices: freewheelling diode
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+94.74 EUR
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IX4310N
IX4310N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
auf Bestellung 1672 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.9 EUR
62+1.16 EUR
73+0.98 EUR
125+0.57 EUR
133+0.54 EUR
Mindestbestellmenge: 38
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IXTN110N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8D4C2C0D3B820&compId=IXTN110N20L2.pdf?ci_sign=22d1ef7a7256a11bcc8df888639ad4005a52d7b3
IXTN110N20L2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 420ns
Electrical mounting: screw
Mechanical mounting: screw
Technology: Linear L2™
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXTK110N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE9939600E0EFF298BF&compId=IXT_110N20L2.pdf?ci_sign=2efcd7c71b9a3d0ca4fa8423b4cac407d61b052b
IXTK110N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXFT120N15P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052
IXFT120N15P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHT™
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.54 EUR
9+8.41 EUR
Mindestbestellmenge: 6
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OMA160 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2699C0C7&compId=OMA160.pdf?ci_sign=81480a08d275770b533880aac2266f2ea5be6c1b
OMA160
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 125µs
Turn-off time: 125µs
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.19 EUR
23+3.12 EUR
25+2.95 EUR
Mindestbestellmenge: 14
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CPC1010N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75180C7&compId=CPC1010N.pdf?ci_sign=41135da2a176468c7114dc43db7a3f64404be7d4
CPC1010N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 11.5Ω
Case: SOP4
Mounting: SMT
Produkt ist nicht verfügbar
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CPC1010NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75180C7&compId=CPC1010N.pdf?ci_sign=41135da2a176468c7114dc43db7a3f64404be7d4
CPC1010NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 11.5Ω
Case: SOP4
Mounting: SMT
Produkt ist nicht verfügbar
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IXFH120N15P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052
IXFH120N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.81 EUR
9+8.22 EUR
10+7.78 EUR
120+7.48 EUR
Mindestbestellmenge: 7
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VUB160-16NOXT VUB160-16NOX.pdf
VUB160-16NOXT
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 695W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: V2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Power dissipation: 695W
Technology: X2PT
Mechanical mounting: screw
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+115.87 EUR
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CPC1020NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75960C7&compId=CPC1020N.pdf?ci_sign=96f62284072c1fad21550f35e7a4e26a55ed445d
CPC1020NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Switched voltage: max. 30V AC; max. 30V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Type of relay: solid state
Relay variant: current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 0.25Ω
Case: SOP4
Mounting: SMT
Produkt ist nicht verfügbar
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CPC1025NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75AA0C7&compId=CPC1025N.pdf?ci_sign=262d69aeff98f8d3fd7ed3ae0d6bdac22dcb08db
CPC1025NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Switched voltage: max. 400V AC; max. 400V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 30Ω
Case: SOP4
Mounting: SMT
Produkt ist nicht verfügbar
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CPC1019NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75800C7&compId=CPC1019N.pdf?ci_sign=1456f68612229fb12531626e0e32c9f25964cac3
CPC1019NTR
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Switched voltage: max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 750mA
Type of relay: solid state
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 0.6Ω
Case: SOP4
Mounting: SMT
Produkt ist nicht verfügbar
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CPC1004NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42900C7&compId=CPC1004N.pdf?ci_sign=c2ff74f63a010424db623c4e5b6a3f4c09119d56
CPC1004NTR
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Switched voltage: max. 100V DC
Operating temperature: -40...110°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 300mA
Type of relay: solid state
Relay variant: current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 1ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 4Ω
Case: SOP4
Mounting: SMT
Produkt ist nicht verfügbar
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CPC1009NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75020C7&compId=CPC1009N.pdf?ci_sign=f40f58f0e387932488df77283d620ba8e67b04b1
CPC1009NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 0.5ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 8Ω
Case: SOP4
Mounting: SMT
Produkt ist nicht verfügbar
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CPC1030NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75BE0C7&compId=CPC1030N.pdf?ci_sign=f5306a3547ebea4ac3441d82e07f700914fb2e7d
CPC1030NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1001NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4918F5536A0C7&compId=CPC1001N.pdf?ci_sign=fed221f1ce6717152996c4670d54d917b333a1f1
CPC1001NTR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Switched voltage: max. 30V DC
Operating temperature: -40...85°C
CTR@If: 100-800%@0.2mA
Max. operating current: 0.1A
Insulation voltage: 1.5kV
Kind of output: transistor
Number of channels: 1
Turn-off time: 30µs
Turn-on time: 1µs
Control current max.: 5mA
Case: SOP4
Type of optocoupler: optocoupler
Mounting: SMD
Produkt ist nicht verfügbar
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CPC1006NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42A60C7&compId=CPC1006N.pdf?ci_sign=72d41b7324042777116a851719d9e0f28d3ef419
CPC1006NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Switched voltage: max. 60V AC; max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 75mA
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 10ms
Turn-on time: 10ms
Control current max.: 50mA
On-state resistance: 10Ω
Case: SOP4
Mounting: SMT
Produkt ist nicht verfügbar
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IXFN400N15X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8C41411F51820&compId=IXFN400N15X3.pdf?ci_sign=13beb68d32a85f3cbcfc07159506072e1f87ebdc
IXFN400N15X3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 400A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 400A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.5mΩ
Pulsed drain current: 900A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 365nC
Reverse recovery time: 132ns
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+52.51 EUR
Mindestbestellmenge: 2
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DSEP60-12A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEED68314162143&compId=DSEP60-12A.pdf?ci_sign=4a7fc7a2560391c6c87bbd840d34293d102b5d7c
DSEP60-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.81V
Power dissipation: 330W
Reverse recovery time: 40ns
Technology: HiPerFRED™
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.48 EUR
8+8.94 EUR
9+8.45 EUR
30+8.17 EUR
Mindestbestellmenge: 7
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DSEP60-12AR description Littelfuse-Power-Semiconductors-DSEP60-12AR-Datasheet?assetguid=10cd7d84-2ee7-4c08-a9c7-b27e7f1dde17
DSEP60-12AR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: ISOPLUS247™
Max. forward voltage: 2.66V
Power dissipation: 230W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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IXDN609CI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDN609CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 1082 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.63 EUR
25+2.93 EUR
26+2.77 EUR
100+2.66 EUR
Mindestbestellmenge: 16
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IXDD614CI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDD614CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 824 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5 EUR
17+4.38 EUR
18+4 EUR
50+3.98 EUR
Mindestbestellmenge: 15
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CPC1706Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4927C8677A0C7&compId=CPC1706.pdf?ci_sign=9ed605bb3e0989318f6e250694ab09cd9e3ff237
CPC1706Y
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; -40÷85°C
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 4A
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 90mΩ
Mounting: THT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.06 EUR
23+3.17 EUR
24+3 EUR
Mindestbestellmenge: 15
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IXFP12N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7AEFCAC3138BF&compId=IXF_12N50P.pdf?ci_sign=3dd36ef8468ec34dac25b7833e04dbc62f9852a3
IXFP12N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Kind of channel: enhancement
Drain current: 12A
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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MIXG330PF1200PTSF
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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MIXG330PF1200TSF
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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DH20-18A pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23249593455EA&compId=DH20-18A.pdf?ci_sign=752292e9c69f0ed0787c1618e087d88fa6115806
DH20-18A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 20A; tube; Ifsm: 150A; TO247-2; 140W
Power dissipation: 140W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Case: TO247-2
Max. off-state voltage: 1.8kV
Max. forward voltage: 2.35V
Load current: 20A
Semiconductor structure: single diode
Reverse recovery time: 300ns
Max. forward impulse current: 150A
auf Bestellung 354 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.94 EUR
15+4.86 EUR
16+4.6 EUR
120+4.49 EUR
Mindestbestellmenge: 11
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CPC5602CTR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A6668BB1AE38BF&compId=CPC5602.pdf?ci_sign=1ab99acd3aab3a1662bfc24a628f4deff77adc0a
CPC5602CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 856 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.27 EUR
82+0.87 EUR
139+0.52 EUR
147+0.49 EUR
Mindestbestellmenge: 57
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DSEK60-12A
DSEK60-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26Ax2; tube; Ifsm: 200A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.55V
Power dissipation: 125W
Reverse recovery time: 40ns
Technology: FRED
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.55 EUR
8+8.94 EUR
Mindestbestellmenge: 7
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VHFD37-16IO1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F20DBFE661D820&compId=VHFD37-ser.pdf?ci_sign=2d812ba971aecf8861ab1d3dd43e94b87114da19
VHFD37-16IO1
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Case: V1-A-Pack
Mechanical mounting: screw
Electrical mounting: FASTON connectors
Leads: connectors
Leads dimensions: 2x0.5mm
Version: module
Load current: 40A
Max. forward impulse current: 280A
Max. off-state voltage: 1.6kV
Gate current: 50/80mA
Type of bridge rectifier: half-controlled
Features of semiconductor devices: field diodes; freewheelling diode
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+40.6 EUR
10+39.04 EUR
Mindestbestellmenge: 2
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VUO80-12NO1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880439D3F1120C4&compId=VUO80-12NO1.pdf?ci_sign=7a78f58303345089e2463f30d4c91583a53278dd
VUO80-12NO1
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
Produkt ist nicht verfügbar
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PLA191S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b
PLA191S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.73 EUR
16+4.58 EUR
17+4.32 EUR
Mindestbestellmenge: 13
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IXTA100N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E1F1BA8D9820&compId=IXTA(P)100N04T2.pdf?ci_sign=6a88636d3dd1a68af7406b8bccbef80c68bda003
IXTA100N04T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO263
On-state resistance: 7mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
Produkt ist nicht verfügbar
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IXTN46N50L pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9230E5AE5F820&compId=IXTN46N50L.pdf?ci_sign=9ab81abbb1adcc6fd1ccf3ad5339605b98bf9c2d
IXTN46N50L
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.16Ω
Gate charge: 260nC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 0.6µs
Semiconductor structure: single transistor
Pulsed drain current: 100A
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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MDMA660U1600PTEH pVersion=0046&contRep=ZT&docId=005056AB281E1FD092D100ED5523E0E1&compId=MDMA660U1600PTEH.pdf?ci_sign=e72c61a2f37282fa00f16d3953aceaa71a0e1234
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Case: E3-Pack
Mechanical mounting: screw
Electrical mounting: Press-Fit
Version: module
Load current: 660A
Max. forward impulse current: 5kA
Max. off-state voltage: 1.6kV
Type of bridge rectifier: three-phase
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+195.2 EUR
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IXFT400N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBC718478C7820&compId=IXFH(T)400N075T2.pdf?ci_sign=1602ac645fb478731e67194e85187b13cbddcb9b
IXFT400N075T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns
Case: TO268
Reverse recovery time: 77ns
Drain-source voltage: 75V
Drain current: 400A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 1kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 420nC
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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DSEI30-10A description pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD568A65B4938BF&compId=DSEI30-10A.pdf?ci_sign=852498fdf79c980b238d3a278082ea33068754bc
DSEI30-10A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 185A
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 138W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.8 EUR
17+4.22 EUR
19+3.83 EUR
Mindestbestellmenge: 15
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DPG60C300HB pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA828AB16F72C143&compId=DPG60C300HB.pdf?ci_sign=591fb5aa9b5ad9a54b35e26906603b70f7da565b
DPG60C300HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 360A
Case: TO247-3
Max. forward voltage: 1.39V
Power dissipation: 160W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.49 EUR
13+5.75 EUR
14+5.18 EUR
15+4.89 EUR
Mindestbestellmenge: 12
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LCA120LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977600C7&compId=LCA120L.pdf?ci_sign=fb673220e7524f26614e617d06afa1cb250d0567
LCA120LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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LCA120LSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977600C7&compId=LCA120L.pdf?ci_sign=fb673220e7524f26614e617d06afa1cb250d0567
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXFX170N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5344B49DB7820&compId=IXFK(X)170N20T.pdf?ci_sign=132d408b08d163a2c5614a95cdf3179fcf883841
IXFX170N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; PLUS247™
Mounting: THT
Case: PLUS247™
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.15kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX170N20P pVersion=0046&contRep=ZT&docId=005056AB752F1EE7919FF3517E5D4746&compId=IXF_170N20P.pdf?ci_sign=7a8e99d2eb2f7ace504a59de513ff4d7089e5376
IXFX170N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1250W; PLUS247™
Mounting: THT
Case: PLUS247™
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFH120N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9869832FD820&compId=IXFH(K)120N20P.pdf?ci_sign=ab9ee0cda8be66ad18abdb1fb39f266891be68ee
IXFH120N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Case: TO247-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 120A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Reverse recovery time: 100ns
Power dissipation: 714W
Polarisation: unipolar
Kind of package: tube
Gate charge: 152nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.32 EUR
7+10.93 EUR
30+10.51 EUR
Mindestbestellmenge: 5
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CPC3701CTR pVersion=0046&contRep=ZT&docId=005056AB752F1EE7919FFA760F104746&compId=CPC3701.pdf?ci_sign=3b686c50781704a72018b86754c7a8d41bba5ce4
CPC3701CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
89+0.8 EUR
140+0.51 EUR
148+0.48 EUR
500+0.47 EUR
Mindestbestellmenge: 61
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DPG15I200PA Littelfuse-Power-Semiconductors-DPG15I200PA-Datasheet?assetguid=54180CEE-BE58-4F2E-B23D-CC4C70F44A3F
DPG15I200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 240A; TO220AC; 90W
Case: TO220AC
Max. off-state voltage: 200V
Max. forward voltage: 1.26V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.1 EUR
Mindestbestellmenge: 23
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IXXH100N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB4A5F5037D820&compId=IXXH100N60B3.pdf?ci_sign=0b1678af7c3157780613381fd45916184563f06e
IXXH100N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 830W
Turn-off time: 350ns
Turn-on time: 92ns
Kind of package: tube
Case: TO247-3
Pulsed collector current: 480A
Collector current: 100A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Gate charge: 143nC
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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DLA100B1200LB-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87FF8D2A340060C4&compId=DLA100B1200LB.pdf?ci_sign=6296754d046772e4fd96965d73e1d8054b583293
DLA100B1200LB-TUB
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 124A
Max. forward impulse current: 0.4kA
Case: SMPD-B
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.23V
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.36 EUR
20+21.06 EUR
Mindestbestellmenge: 4
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IXDN609SI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDN609SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 1580 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.36 EUR
32+2.25 EUR
34+2.13 EUR
100+2.12 EUR
200+2.04 EUR
Mindestbestellmenge: 22
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IXDN609SIA pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDN609SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.12 EUR
47+1.54 EUR
50+1.43 EUR
53+1.36 EUR
100+1.32 EUR
Mindestbestellmenge: 34
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IXDN609PI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDN609PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 718 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.12 EUR
46+1.56 EUR
50+1.44 EUR
53+1.36 EUR
100+1.32 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IXDN609YI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDN609YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Case: TO263-5
Mounting: SMD
Kind of package: tube
Output current: -9...9A
Type of integrated circuit: driver
Number of channels: 1
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 814 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.69 EUR
27+2.73 EUR
28+2.59 EUR
100+2.49 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXYH30N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8FA49F63C7820&compId=IXYH(P)30N65C3.pdf?ci_sign=b199e109e3ab7a2153ecd617407198b811892fd9
IXYH30N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate charge: 44nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYP30N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8FA49F63C7820&compId=IXYH(P)30N65C3.pdf?ci_sign=b199e109e3ab7a2153ecd617407198b811892fd9
IXYP30N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Pulsed collector current: 118A
Collector current: 30A
Produkt ist nicht verfügbar
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IXYH30N65C3H1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8173C8A8ADE0C4&compId=IXY_30N65C3H1_HV.pdf?ci_sign=fe90d70eb5a4baa936f0659d92f838d1ceb9cd3a
IXYH30N65C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Pulsed collector current: 118A
Collector current: 30A
Produkt ist nicht verfügbar
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IXYT30N65C3H1HV pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8173C8A8ADE0C4&compId=IXY_30N65C3H1_HV.pdf?ci_sign=fe90d70eb5a4baa936f0659d92f838d1ceb9cd3a
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Pulsed collector current: 118A
Collector current: 30A
Produkt ist nicht verfügbar
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LF2136BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F27090BC18C0CE&compId=LF2136BTR.pdf?ci_sign=7d4488ec65212ff10c76d0a7eb8b2083d5f4913f
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Case: SO28
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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PBA150S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26AB60C7&compId=PBA150.pdf?ci_sign=95c39d9d73c016e3ffd8e8cb2457778578aa240e
PBA150S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Case: DIP8
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.72 EUR
11+6.68 EUR
Mindestbestellmenge: 9
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IXGH10N170A pVersion=0046&contRep=ZT&docId=005056AB82531EE995A98EA1E25B38BF&compId=IXG_10N170A.pdf?ci_sign=43009bf67308e8af9bb85474249e61e9278ec252
IXGH10N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Gate-emitter voltage: ±20V
Collector current: 5A
Pulsed collector current: 20A
Turn-on time: 107ns
Turn-off time: 240ns
Type of transistor: IGBT
Power dissipation: 140W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 29nC
Technology: NPT
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.7kV
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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