Foto | Bezeichnung | Hersteller | Beschreibung |
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IXYH50N65C3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 56ns Turn-off time: 145ns Technology: GenX3™; Planar; XPT™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXYH50N65C3D1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 56ns Turn-off time: 145ns Technology: GenX3™; Planar; XPT™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXYP50N65C3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 56ns Turn-off time: 145ns Technology: GenX3™; Planar; XPT™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTX120P20T | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W Kind of channel: enhancement Type of transistor: P-MOSFET Case: PLUS247™ Mounting: THT Technology: TrenchP™ Kind of package: tube Polarisation: unipolar Drain-source voltage: -200V Drain current: -120A Gate charge: 740nC Reverse recovery time: 300ns On-state resistance: 30mΩ Gate-source voltage: ±15V Power dissipation: 1.04kW |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGX320N60B3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 1.7kW Case: PLUS247™ Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Gate charge: 585nC Turn-on time: 107ns Turn-off time: 595ns Collector current: 320A Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA34N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO263 On-state resistance: 0.1Ω Mounting: SMD Gate charge: 56nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 164ns Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFH34N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 164ns Technology: HiPerFET™; X2-Class |
auf Bestellung 189 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP34N65X3 | IXYS |
![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: HiPerFET™; X3-Class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTA24N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 390W Case: TO263 On-state resistance: 0.145Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 390ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTA34N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO263 On-state resistance: 96mΩ Mounting: SMD Gate charge: 54nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTH34N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO247-3 On-state resistance: 96mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTP24N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 390W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Technology: X2-Class |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTN90P20P | IXYS |
![]() Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A Case: SOT227B Polarisation: unipolar Pulsed drain current: -270A Drain-source voltage: -200V Drain current: -90A Electrical mounting: screw Gate charge: 205nC Reverse recovery time: 315ns On-state resistance: 44mΩ Semiconductor structure: single transistor Technology: PolarP™ Gate-source voltage: ±30V Type of semiconductor module: MOSFET transistor Power dissipation: 890W Kind of channel: enhancement Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTP90N055T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns Case: TO220AB Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Drain-source voltage: 55V Drain current: 90A Gate charge: 42nC Reverse recovery time: 37ns On-state resistance: 8.4mΩ Power dissipation: 150W Polarisation: unipolar Kind of channel: enhancement |
auf Bestellung 292 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTR90P20P | IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns Mounting: THT Case: ISOPLUS247™ Kind of package: tube Polarisation: unipolar Drain-source voltage: -200V Drain current: -53A Gate charge: 205nC Reverse recovery time: 315ns On-state resistance: 48mΩ Technology: PolarP™ Type of transistor: P-MOSFET Gate-source voltage: ±20V Power dissipation: 312W Kind of channel: enhancement |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN26N100P | IXYS |
![]() Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 23A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 390mΩ Pulsed drain current: 65A Power dissipation: 595W Technology: HiPerFET™; Polar™ Gate-source voltage: ±40V Mechanical mounting: screw Reverse recovery time: 300ns Gate charge: 197nC Kind of channel: enhancement |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYH85N120A4 | IXYS |
![]() Description: Transistor: IGBT; GenX4™; 1.2kV; 85A; 1.15kW; TO247-3 Mounting: THT Kind of package: tube Turn-on time: 73ns Gate charge: 200nC Turn-off time: 990ns Collector current: 85A Gate-emitter voltage: ±20V Power dissipation: 1.15kW Pulsed collector current: 520A Collector-emitter voltage: 1.2kV Technology: GenX4™; Trench™; XPT™ Type of transistor: IGBT Case: TO247-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CS20-16IO1 | IXYS |
![]() ![]() Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube Kind of package: tube Case: TO247AD Mounting: THT Type of thyristor: thyristor Gate current: 50mA Max. load current: 31A Load current: 20A Max. forward impulse current: 260A Max. off-state voltage: 1.6kV |
auf Bestellung 155 Stücke: Lieferzeit 14-21 Tag (e) |
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MCD72-12IO1B | IXYS |
![]() ![]() ![]() Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk Case: TO240AA Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.85V Max. forward voltage: 1.34V Load current: 85A Max. load current: 133A Max. forward impulse current: 1.7kA Max. off-state voltage: 1.2kV Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGK120N120A3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 830W Case: TO264 Mounting: THT Gate charge: 420nC Kind of package: tube Collector-emitter voltage: 1.2kV Turn-on time: 105ns Turn-off time: 1365ns Collector current: 120A Gate-emitter voltage: ±20V Pulsed collector current: 600A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXGK120N120B3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 830W Case: TO264 Mounting: THT Gate charge: 470nC Kind of package: tube Collector-emitter voltage: 1.2kV Turn-on time: 122ns Turn-off time: 885ns Collector current: 120A Gate-emitter voltage: ±20V Pulsed collector current: 370A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXYK120N120C3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264 Type of transistor: IGBT Power dissipation: 1.5kW Case: TO264 Mounting: THT Gate charge: 412nC Kind of package: tube Turn-on time: 105ns Turn-off time: 346ns Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 700A Collector-emitter voltage: 1.2kV Technology: GenX3™; Planar; XPT™ |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYX120N120B3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™ Type of transistor: IGBT Power dissipation: 1.5kW Case: PLUS247™ Mounting: THT Gate charge: 400nC Kind of package: tube Turn-on time: 84ns Turn-off time: 826ns Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 800A Collector-emitter voltage: 1.2kV Technology: GenX3™; Planar; XPT™ |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYX120N120C3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™ Type of transistor: IGBT Power dissipation: 1.5kW Case: PLUS247™ Mounting: THT Gate charge: 412nC Kind of package: tube Turn-on time: 105ns Turn-off time: 346ns Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 700A Collector-emitter voltage: 1.2kV Technology: GenX3™; Planar; XPT™ |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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MMIX1G120N120A3V1 | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; PT Power dissipation: 400W Case: SMPD Mounting: SMD Gate charge: 420nC Kind of package: tube Collector-emitter voltage: 1.2kV Turn-on time: 105ns Turn-off time: 1365ns Collector current: 105A Gate-emitter voltage: ±20V Pulsed collector current: 700A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IX4340UE | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: MSOP8 Output current: -5...5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 5...20V Kind of output: non-inverting |
auf Bestellung 1775 Stücke: Lieferzeit 14-21 Tag (e) |
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IX4340UETR | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: MSOP8 Output current: -5...5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 5...20V Kind of output: non-inverting |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTA26P20P | IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263 Mounting: SMD Case: TO263 Kind of package: tube Polarisation: unipolar Drain-source voltage: -200V Drain current: -26A Gate charge: 56nC Reverse recovery time: 240ns On-state resistance: 0.17Ω Technology: PolarP™ Type of transistor: P-MOSFET Gate-source voltage: ±20V Power dissipation: 300W Kind of channel: enhancement |
auf Bestellung 348 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH26P20P | IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Polarisation: unipolar Drain-source voltage: -200V Drain current: -26A Gate charge: 56nC Reverse recovery time: 240ns On-state resistance: 0.17Ω Technology: PolarP™ Type of transistor: P-MOSFET Gate-source voltage: ±20V Power dissipation: 300W Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTH48P20P | IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Polarisation: unipolar Drain-source voltage: -200V Drain current: -48A Gate charge: 103nC Reverse recovery time: 260ns On-state resistance: 85mΩ Technology: PolarP™ Type of transistor: P-MOSFET Gate-source voltage: ±20V Power dissipation: 462W Kind of channel: enhancement |
auf Bestellung 297 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP26P20P | IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB Mounting: THT Case: TO220AB Kind of package: tube Polarisation: unipolar Drain-source voltage: -200V Drain current: -26A Gate charge: 56nC Reverse recovery time: 240ns On-state resistance: 0.17Ω Technology: PolarP™ Type of transistor: P-MOSFET Gate-source voltage: ±20V Power dissipation: 300W Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTQ26P20P | IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P Mounting: THT Case: TO3P Kind of package: tube Polarisation: unipolar Drain-source voltage: -200V Drain current: -26A Gate charge: 56nC Reverse recovery time: 240ns On-state resistance: 0.17Ω Technology: PolarP™ Type of transistor: P-MOSFET Gate-source voltage: ±20V Power dissipation: 300W Kind of channel: enhancement |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTR48P20P | IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns Mounting: THT Case: ISOPLUS247™ Kind of package: tube Polarisation: unipolar Drain-source voltage: -200V Drain current: -30A Gate charge: 103nC Reverse recovery time: 260ns On-state resistance: 93mΩ Technology: PolarP™ Type of transistor: P-MOSFET Gate-source voltage: ±20V Power dissipation: 190W Kind of channel: enhancement |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTT48P20P | IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268 Mounting: SMD Case: TO268 Kind of package: tube Polarisation: unipolar Drain-source voltage: -200V Drain current: -48A Gate charge: 103nC Reverse recovery time: 260ns On-state resistance: 85mΩ Technology: PolarP™ Type of transistor: P-MOSFET Gate-source voltage: ±20V Power dissipation: 462W Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXGK55N120A3H1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264 Mounting: THT Kind of package: tube Turn-on time: 70ns Gate charge: 185nC Turn-off time: 1253ns Collector current: 55A Gate-emitter voltage: ±20V Power dissipation: 460W Pulsed collector current: 400A Collector-emitter voltage: 1.2kV Technology: GenX3™; PT Type of transistor: IGBT Case: TO264 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CPC1130N | IXYS |
![]() Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 2ms Kind of output: MOSFET |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1709J | IXYS |
![]() Description: Relay: solid state; 11000mA; max.60VDC; THT; ISOPLUS264™; OptoMOS Case: ISOPLUS264™ Mounting: THT Relay variant: current source Kind of output: MOSFET Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-off time: 5ms Body dimensions: 19.91x26.16x5.03mm Turn-on time: 20ms On-state resistance: 50mΩ Control current max.: 100mA Max. operating current: 11A Switched voltage: max. 60V DC Insulation voltage: 2.5kV Manufacturer series: OptoMOS |
auf Bestellung 212 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1030N | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Operating temperature: -40...85°C Turn-off time: 1ms On-state resistance: 30Ω Contacts configuration: SPST-NO Manufacturer series: OptoMOS Turn-on time: 2ms Kind of output: MOSFET |
auf Bestellung 127 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1125N | IXYS |
![]() Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 2ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXYH40N65B3D1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 195A Mounting: THT Gate charge: 68nC Kind of package: tube Turn-on time: 57ns Turn-off time: 350ns Technology: GenX3™; Planar; XPT™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXYH40N65C3D1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 64ns Turn-off time: 160ns Technology: GenX3™; Planar; XPT™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXYH40N65C3H1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 65ns Turn-off time: 206ns Technology: GenX3™; Planar; XPT™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXXH140N65B4 | IXYS |
![]() Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 140A Power dissipation: 1.2kW Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 840A Mounting: THT Gate charge: 250nC Kind of package: tube Turn-on time: 128ns Turn-off time: 340ns Technology: GenX4™; Trench; XPT™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXXH140N65C4 | IXYS |
![]() Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 140A Power dissipation: 1.2kW Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 730A Mounting: THT Gate charge: 250nC Kind of package: tube Turn-on time: 114ns Turn-off time: 273ns Technology: GenX4™; Trench; XPT™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFT15N100Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 15A Power dissipation: 690W Case: TO268 On-state resistance: 1.05Ω Mounting: SMD Gate charge: 64nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTA05N100 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.75A Power dissipation: 40W Case: TO263 On-state resistance: 17Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 710ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTA05N100HV | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.75A Power dissipation: 40W Case: TO263HV On-state resistance: 17Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 710ns |
auf Bestellung 290 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP05N100 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.75A Power dissipation: 40W Case: TO220AB On-state resistance: 17Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 710ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTP05N100P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.5A Power dissipation: 50W Case: TO220AB On-state resistance: 30Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 750ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXDN614CI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -14...14A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns |
auf Bestellung 729 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN614SI | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Output current: -14...14A Number of channels: 1 Mounting: SMD Case: SO8-EP Kind of package: tube Operating temperature: -40...125°C Turn-off time: 130ns Turn-on time: 140ns Supply voltage: 4.5...35V Kind of output: non-inverting |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEI2X121-02A | IXYS |
![]() Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 200V Load current: 123A x2 Case: SOT227B Max. forward voltage: 1.1V Max. forward impulse current: 1.3kA Electrical mounting: screw Mechanical mounting: screw |
auf Bestellung 77 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN220N20X3 | IXYS |
![]() ![]() Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 160A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 6.2mΩ Pulsed drain current: 500A Power dissipation: 390W Technology: HiPerFET™; X3-Class Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 128ns Gate charge: 204nC Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTX8N150L | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Type of transistor: N-MOSFET Case: PLUS247™ Kind of package: tube Mounting: THT Polarisation: unipolar Gate charge: 250nC Reverse recovery time: 1.7µs On-state resistance: 3.6Ω Power dissipation: 700W Drain current: 8A Drain-source voltage: 1.5kV |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP2N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Power dissipation: 55W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Gate charge: 4.3nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 137ns Technology: X2-Class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTP24N65X2M | IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 37W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Technology: X2-Class |
auf Bestellung 103 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGH36N60B3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 250W Case: TO247-3 Mounting: THT Gate charge: 80nC Kind of package: tube Collector-emitter voltage: 600V Turn-on time: 45ns Turn-off time: 350ns Collector current: 36A Pulsed collector current: 200A Gate-emitter voltage: ±20V |
auf Bestellung 227 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGH36N60B3C1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 250W Case: TO247-3 Mounting: THT Gate charge: 80nC Kind of package: tube Collector-emitter voltage: 600V Turn-on time: 47ns Turn-off time: 350ns Collector current: 36A Pulsed collector current: 200A Gate-emitter voltage: ±20V |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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MCD132-12io1 | IXYS |
![]() ![]() Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.8V Max. forward voltage: 1.08V Load current: 130A Max. load current: 300A Max. off-state voltage: 1.2kV Max. forward impulse current: 4.75kA Type of semiconductor module: diode-thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
MCD132-14io1 | IXYS |
![]() ![]() Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.8V Max. forward voltage: 1.08V Load current: 130A Max. load current: 300A Max. off-state voltage: 1.4kV Max. forward impulse current: 4.75kA Type of semiconductor module: diode-thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IXYH50N65C3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXYH50N65C3D1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXYP50N65C3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTX120P20T |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PLUS247™
Mounting: THT
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Gate charge: 740nC
Reverse recovery time: 300ns
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PLUS247™
Mounting: THT
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Gate charge: 740nC
Reverse recovery time: 300ns
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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3+ | 28.09 EUR |
10+ | 27.01 EUR |
IXGX320N60B3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 1.7kW
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate charge: 585nC
Turn-on time: 107ns
Turn-off time: 595ns
Collector current: 320A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 1.7kW
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate charge: 585nC
Turn-on time: 107ns
Turn-off time: 595ns
Collector current: 320A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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1+ | 71.5 EUR |
IXFA34N65X2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFH34N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Technology: HiPerFET™; X2-Class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Technology: HiPerFET™; X2-Class
auf Bestellung 189 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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10+ | 7.94 EUR |
12+ | 6.08 EUR |
120+ | 5.85 EUR |
IXFP34N65X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTA24N65X2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTA34N65X2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTH34N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTP24N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.34 EUR |
16+ | 4.59 EUR |
17+ | 4.35 EUR |
IXTN90P20P |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A
Case: SOT227B
Polarisation: unipolar
Pulsed drain current: -270A
Drain-source voltage: -200V
Drain current: -90A
Electrical mounting: screw
Gate charge: 205nC
Reverse recovery time: 315ns
On-state resistance: 44mΩ
Semiconductor structure: single transistor
Technology: PolarP™
Gate-source voltage: ±30V
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Kind of channel: enhancement
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A
Case: SOT227B
Polarisation: unipolar
Pulsed drain current: -270A
Drain-source voltage: -200V
Drain current: -90A
Electrical mounting: screw
Gate charge: 205nC
Reverse recovery time: 315ns
On-state resistance: 44mΩ
Semiconductor structure: single transistor
Technology: PolarP™
Gate-source voltage: ±30V
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Kind of channel: enhancement
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTP90N055T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Case: TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Drain-source voltage: 55V
Drain current: 90A
Gate charge: 42nC
Reverse recovery time: 37ns
On-state resistance: 8.4mΩ
Power dissipation: 150W
Polarisation: unipolar
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Case: TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Drain-source voltage: 55V
Drain current: 90A
Gate charge: 42nC
Reverse recovery time: 37ns
On-state resistance: 8.4mΩ
Power dissipation: 150W
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.93 EUR |
41+ | 1.76 EUR |
44+ | 1.66 EUR |
IXTR90P20P |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -53A
Gate charge: 205nC
Reverse recovery time: 315ns
On-state resistance: 48mΩ
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 312W
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -53A
Gate charge: 205nC
Reverse recovery time: 315ns
On-state resistance: 48mΩ
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 312W
Kind of channel: enhancement
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.25 EUR |
IXFN26N100P |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 390mΩ
Pulsed drain current: 65A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 197nC
Kind of channel: enhancement
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 390mΩ
Pulsed drain current: 65A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 197nC
Kind of channel: enhancement
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 38.07 EUR |
IXYH85N120A4 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 85A; 1.15kW; TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 73ns
Gate charge: 200nC
Turn-off time: 990ns
Collector current: 85A
Gate-emitter voltage: ±20V
Power dissipation: 1.15kW
Pulsed collector current: 520A
Collector-emitter voltage: 1.2kV
Technology: GenX4™; Trench™; XPT™
Type of transistor: IGBT
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 85A; 1.15kW; TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 73ns
Gate charge: 200nC
Turn-off time: 990ns
Collector current: 85A
Gate-emitter voltage: ±20V
Power dissipation: 1.15kW
Pulsed collector current: 520A
Collector-emitter voltage: 1.2kV
Technology: GenX4™; Trench™; XPT™
Type of transistor: IGBT
Case: TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CS20-16IO1 |
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Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Kind of package: tube
Case: TO247AD
Mounting: THT
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 31A
Load current: 20A
Max. forward impulse current: 260A
Max. off-state voltage: 1.6kV
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Kind of package: tube
Case: TO247AD
Mounting: THT
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 31A
Load current: 20A
Max. forward impulse current: 260A
Max. off-state voltage: 1.6kV
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.98 EUR |
14+ | 5.13 EUR |
15+ | 4.85 EUR |
20+ | 4.66 EUR |
MCD72-12IO1B |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.34V
Load current: 85A
Max. load current: 133A
Max. forward impulse current: 1.7kA
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.34V
Load current: 85A
Max. load current: 133A
Max. forward impulse current: 1.7kA
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 36.52 EUR |
3+ | 36.51 EUR |
IXGK120N120A3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 830W
Case: TO264
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 105ns
Turn-off time: 1365ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 830W
Case: TO264
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 105ns
Turn-off time: 1365ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXGK120N120B3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 830W
Case: TO264
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 122ns
Turn-off time: 885ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 830W
Case: TO264
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 122ns
Turn-off time: 885ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXYK120N120C3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Power dissipation: 1.5kW
Case: TO264
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 700A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; Planar; XPT™
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Power dissipation: 1.5kW
Case: TO264
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 700A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; Planar; XPT™
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 31.77 EUR |
IXYX120N120B3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 800A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; Planar; XPT™
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 800A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; Planar; XPT™
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 31.06 EUR |
IXYX120N120C3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 700A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; Planar; XPT™
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 700A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; Planar; XPT™
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 33.53 EUR |
MMIX1G120N120A3V1 |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Power dissipation: 400W
Case: SMPD
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 105ns
Turn-off time: 1365ns
Collector current: 105A
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Power dissipation: 400W
Case: SMPD
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 105ns
Turn-off time: 1365ns
Collector current: 105A
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IX4340UE |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
auf Bestellung 1775 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.12 EUR |
57+ | 1.27 EUR |
93+ | 0.78 EUR |
98+ | 0.74 EUR |
560+ | 0.71 EUR |
IX4340UETR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTA26P20P |
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Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.72 EUR |
12+ | 5.98 EUR |
13+ | 5.65 EUR |
IXTH26P20P |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTH48P20P |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -48A
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 85mΩ
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 462W
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -48A
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 85mΩ
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 462W
Kind of channel: enhancement
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 13.33 EUR |
7+ | 10.42 EUR |
8+ | 9.85 EUR |
30+ | 9.58 EUR |
IXTP26P20P |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ26P20P |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 8.97 EUR |
12+ | 5.98 EUR |
13+ | 5.65 EUR |
120+ | 5.48 EUR |
IXTR48P20P |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -30A
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 93mΩ
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 190W
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -30A
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 93mΩ
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 190W
Kind of channel: enhancement
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 10.12 EUR |
10+ | 7.49 EUR |
IXTT48P20P |
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Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -48A
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 85mΩ
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 462W
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -48A
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 85mΩ
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 462W
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXGK55N120A3H1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264
Mounting: THT
Kind of package: tube
Turn-on time: 70ns
Gate charge: 185nC
Turn-off time: 1253ns
Collector current: 55A
Gate-emitter voltage: ±20V
Power dissipation: 460W
Pulsed collector current: 400A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; PT
Type of transistor: IGBT
Case: TO264
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264
Mounting: THT
Kind of package: tube
Turn-on time: 70ns
Gate charge: 185nC
Turn-off time: 1253ns
Collector current: 55A
Gate-emitter voltage: ±20V
Power dissipation: 460W
Pulsed collector current: 400A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; PT
Type of transistor: IGBT
Case: TO264
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1130N |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 5.96 EUR |
CPC1709J |
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Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 11000mA; max.60VDC; THT; ISOPLUS264™; OptoMOS
Case: ISOPLUS264™
Mounting: THT
Relay variant: current source
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Turn-on time: 20ms
On-state resistance: 50mΩ
Control current max.: 100mA
Max. operating current: 11A
Switched voltage: max. 60V DC
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Category: DC Solid State Relays
Description: Relay: solid state; 11000mA; max.60VDC; THT; ISOPLUS264™; OptoMOS
Case: ISOPLUS264™
Mounting: THT
Relay variant: current source
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Turn-on time: 20ms
On-state resistance: 50mΩ
Control current max.: 100mA
Max. operating current: 11A
Switched voltage: max. 60V DC
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.48 EUR |
9+ | 8.19 EUR |
10+ | 7.75 EUR |
CPC1030N |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 1ms
On-state resistance: 30Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 1ms
On-state resistance: 30Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 2ms
Kind of output: MOSFET
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.32 EUR |
40+ | 1.8 EUR |
43+ | 1.7 EUR |
CPC1125N |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXYH40N65B3D1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
Technology: GenX3™; Planar; XPT™
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXYH40N65C3D1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXYH40N65C3H1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
Technology: GenX3™; Planar; XPT™
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXXH140N65B4 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
Technology: GenX4™; Trench; XPT™
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXXH140N65C4 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
Technology: GenX4™; Trench; XPT™
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFT15N100Q3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTA05N100 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTA05N100HV |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.42 EUR |
18+ | 4.09 EUR |
21+ | 3.55 EUR |
22+ | 3.36 EUR |
50+ | 3.33 EUR |
IXTP05N100 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO220AB
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO220AB
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTP05N100P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.5A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.5A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXDN614CI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 729 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.45 EUR |
16+ | 4.59 EUR |
17+ | 4.33 EUR |
50+ | 4.16 EUR |
IXDN614SI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Case: SO8-EP
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Case: SO8-EP
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
Kind of output: non-inverting
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 3.99 EUR |
21+ | 3.42 EUR |
22+ | 3.36 EUR |
DSEI2X121-02A |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 123A x2
Case: SOT227B
Max. forward voltage: 1.1V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 123A x2
Case: SOT227B
Max. forward voltage: 1.1V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 32.89 EUR |
5+ | 32.38 EUR |
IXFN220N20X3 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 128ns
Gate charge: 204nC
Kind of channel: enhancement
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 128ns
Gate charge: 204nC
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
IXTX8N150L |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
Drain current: 8A
Drain-source voltage: 1.5kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
Drain current: 8A
Drain-source voltage: 1.5kV
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 42.53 EUR |
IXTP2N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTP24N65X2M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.51 EUR |
20+ | 3.62 EUR |
21+ | 3.42 EUR |
50+ | 3.29 EUR |
IXGH36N60B3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.85 EUR |
15+ | 4.85 EUR |
16+ | 4.58 EUR |
30+ | 4.4 EUR |
IXGH36N60B3C1 |
![]() |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 47ns
Turn-off time: 350ns
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 47ns
Turn-off time: 350ns
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
MCD132-12io1 |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCD132-14io1 |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH