Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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MCD132-12io1 | IXYS |
![]() ![]() Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.8V Max. forward voltage: 1.08V Load current: 130A Max. load current: 300A Max. off-state voltage: 1.2kV Max. forward impulse current: 4.75kA Type of semiconductor module: diode-thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MCD132-14io1 | IXYS |
![]() ![]() Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.8V Max. forward voltage: 1.08V Load current: 130A Max. load current: 300A Max. off-state voltage: 1.4kV Max. forward impulse current: 4.75kA Type of semiconductor module: diode-thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MCD132-16io1 | IXYS |
![]() ![]() Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.8V Max. forward voltage: 1.08V Load current: 130A Max. load current: 300A Max. off-state voltage: 1.6kV Max. forward impulse current: 4.75kA Type of semiconductor module: diode-thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MCD132-18io1 | IXYS |
![]() ![]() Description: Module: diode-thyristor; 1.8kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.8V Max. forward voltage: 1.08V Load current: 130A Max. load current: 300A Max. off-state voltage: 1.8kV Max. forward impulse current: 4.75kA Type of semiconductor module: diode-thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXFL82N60P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 55A Power dissipation: 625W Case: ISOPLUS264™ On-state resistance: 80mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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MCMA50P1200TA | IXYS |
![]() ![]() Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V Mechanical mounting: screw Electrical mounting: screw Gate current: 78/200mA Max. forward voltage: 1.48V Load current: 50A Max. off-state voltage: 1.2kV Kind of package: bulk Semiconductor structure: double series Case: TO240AA Type of semiconductor module: thyristor |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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MCMA50P1600TA | IXYS |
![]() ![]() Description: Module: thyristor; double series; 1.6kV; 50A; TO240AA; Ufmax: 1.48V Mechanical mounting: screw Electrical mounting: screw Gate current: 78/200mA Max. forward voltage: 1.48V Load current: 50A Max. off-state voltage: 1.6kV Kind of package: bulk Semiconductor structure: double series Case: TO240AA Type of semiconductor module: thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MDMA50P1200TG | IXYS |
![]() ![]() ![]() Description: Module: diode; double series; 1.2kV; If: 50A; TO240AA; Ufmax: 1.09V Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.09V Load current: 50A Max. forward impulse current: 850A Max. off-state voltage: 1.2kV Semiconductor structure: double series Case: TO240AA Type of semiconductor module: diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MDMA50P1600TG | IXYS |
![]() ![]() ![]() Description: Module: diode; double series; 1.6kV; If: 50A; TO240AA; Ufmax: 1.09V Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.09V Load current: 50A Max. forward impulse current: 850A Max. off-state voltage: 1.6kV Semiconductor structure: double series Case: TO240AA Type of semiconductor module: diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXFN50N120SK | IXYS |
![]() Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 48A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 50mΩ Technology: SiC Gate-source voltage: -5...20V Mechanical mounting: screw Features of semiconductor devices: Kelvin terminal Reverse recovery time: 54ns Gate charge: 115nC Kind of channel: enhancement |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA130N10T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO263 On-state resistance: 10.1mΩ Mounting: SMD Gate charge: 130nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFH230N10T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 230A Power dissipation: 650W Case: TO247-3 On-state resistance: 4.7mΩ Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 82ns |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP130N10T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO220AB On-state resistance: 10.1mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1560G | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC Type of relay: solid state Control current max.: 50mA Max. operating current: 300mA Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source Mounting: THT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Operating temperature: -40...85°C Turn-off time: 400µs On-state resistance: 5.6Ω Contacts configuration: SPST-NO Turn-on time: 0.1ms Kind of output: MOSFET |
auf Bestellung 146 Stücke: Lieferzeit 14-21 Tag (e) |
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VVZ110-12IO7 | IXYS |
![]() Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E Version: module Case: PWS-E Leads: M6 screws Electrical mounting: FASTON connectors; screw Type of bridge rectifier: half-controlled Mechanical mounting: screw Gate current: 100/200mA Max. forward voltage: 1.75V Load current: 110A Max. off-state voltage: 1.2kV Max. forward impulse current: 1.35kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXTH50P10 | IXYS |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns Kind of channel: enhancement Mounting: THT Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -50A Gate charge: 0.14µC Reverse recovery time: 180ns On-state resistance: 55mΩ Gate-source voltage: ±20V Power dissipation: 300W Kind of package: tube Case: TO247-3 |
auf Bestellung 306 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTT50P10 | IXYS |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -50A Gate charge: 0.14µC Reverse recovery time: 180ns On-state resistance: 55mΩ Gate-source voltage: ±20V Power dissipation: 300W Kind of package: tube Case: TO268 |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP60N25X3M | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 60A Power dissipation: 36W Case: TO220FP On-state resistance: 23mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Gate charge: 50nC Reverse recovery time: 95ns |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTN210P10T | IXYS |
![]() Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A Case: SOT227B Semiconductor structure: single transistor Polarisation: unipolar Pulsed drain current: -800A Drain current: -210A Drain-source voltage: -100V Gate charge: 740nC Reverse recovery time: 200ns On-state resistance: 7.5mΩ Gate-source voltage: ±15V Power dissipation: 830W Electrical mounting: screw Kind of channel: enhancement Mechanical mounting: screw Technology: TrenchP™ Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTR210P10T | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Polarisation: unipolar Drain current: -195A Drain-source voltage: -100V Gate charge: 740nC Reverse recovery time: 200ns On-state resistance: 8mΩ Gate-source voltage: ±15V Power dissipation: 390W Kind of channel: enhancement Technology: TrenchP™ Type of transistor: P-MOSFET |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTX210P10T | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W Case: PLUS247™ Mounting: THT Kind of package: tube Polarisation: unipolar Drain current: -210A Drain-source voltage: -100V Gate charge: 740nC Reverse recovery time: 200ns On-state resistance: 7.5mΩ Gate-source voltage: ±15V Power dissipation: 1.04kW Kind of channel: enhancement Technology: TrenchP™ Type of transistor: P-MOSFET |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1510G | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC Type of relay: solid state Control current max.: 50mA Max. operating current: 200mA Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source Mounting: THT Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Operating temperature: -40...85°C Turn-off time: 2ms On-state resistance: 15Ω Contacts configuration: SPST-NO Turn-on time: 2ms Kind of output: MOSFET |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1510GS | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC Type of relay: solid state Control current max.: 50mA Max. operating current: 200mA Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source Mounting: SMT Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Operating temperature: -40...85°C Turn-off time: 2ms On-state resistance: 15Ω Contacts configuration: SPST-NO Turn-on time: 2ms Kind of output: MOSFET |
auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEC16-12A | IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W Mounting: THT Type of diode: rectifying Kind of package: tube Reverse recovery time: 40ns Heatsink thickness: 1.14...1.39mm Max. forward voltage: 2.94V Load current: 8A x2 Max. forward impulse current: 40A Power dissipation: 60W Max. off-state voltage: 1.2kV Semiconductor structure: common cathode; double Case: TO220AB Features of semiconductor devices: fast switching Technology: HiPerFRED™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
DSEC16-12AS-TUB | IXYS |
![]() Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W Power dissipation: 60W Case: D2PAK Mounting: SMD Features of semiconductor devices: fast switching Technology: HiPerFRED™ Type of diode: rectifying Kind of package: tube Reverse recovery time: 40ns Max. forward voltage: 1.96V Load current: 8A x2 Max. off-state voltage: 1.2kV Max. forward impulse current: 40A Semiconductor structure: common cathode; double |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXTQ120N20P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P Case: TO3P Mounting: THT Gate-source voltage: ±20V Gate charge: 152nC Reverse recovery time: 180ns On-state resistance: 22mΩ Drain current: 120A Power dissipation: 714W Drain-source voltage: 200V Kind of package: tube Kind of channel: enhancement Technology: PolarHT™ Polarisation: unipolar Type of transistor: N-MOSFET |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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PLB190 | IXYS |
![]() Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: THT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 1ms Turn-off time: 2.5ms Operating temperature: -40...85°C |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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PLB190S | IXYS |
![]() Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 1ms Turn-off time: 2.5ms Operating temperature: -40...85°C |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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PLB190STR | IXYS |
![]() Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 1ms Turn-off time: 2.5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXTQ34N65X2M | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 40W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 96mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTQ48N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 48A Pulsed drain current: 70A Power dissipation: 70W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP60N25X3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 60A Power dissipation: 320W Case: TO220AB On-state resistance: 23mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Gate charge: 50nC Reverse recovery time: 95ns |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK102N30P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264 Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 102A Gate charge: 224nC On-state resistance: 33mΩ Power dissipation: 700W Kind of package: tube Case: TO264 Kind of channel: enhancement |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH32N65X | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 32A Power dissipation: 500W Case: TO247-3 On-state resistance: 135mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 400ns Features of semiconductor devices: ultra junction x-class |
auf Bestellung 159 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN240N15T2 | IXYS |
![]() Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 150V Drain current: 240A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 5.2mΩ Pulsed drain current: 600A Power dissipation: 830W Technology: GigaMOS™; HiPerFET™; TrenchT2™ Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 140ns Gate charge: 460nC Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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DSS25-0025B | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V Type of diode: Schottky rectifying Case: TO220AC Mounting: THT Max. off-state voltage: 25V Load current: 25A Semiconductor structure: single diode Max. forward voltage: 0.44V Max. forward impulse current: 330A Kind of package: tube Power dissipation: 90W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFN36N100 | IXYS |
![]() ![]() Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 36A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.24Ω Pulsed drain current: 144A Power dissipation: 694W Technology: HiPerFET™ Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 180ns Gate charge: 380nC Kind of channel: enhancement |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1973Y | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC Case: SIP4 On-state resistance: 5Ω Mounting: THT Kind of output: MOSFET Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Max. operating current: 0.35mA Turn-off time: 3ms Turn-on time: 5ms Body dimensions: 21.08x10.16x3.3mm Control current max.: 50mA Switched voltage: max. 400V AC Insulation voltage: 2.5kV Relay variant: 1-phase Manufacturer series: OptoMOS |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFB82N60Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 82A Power dissipation: 1.56kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 75mΩ Mounting: THT Gate charge: 275nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Q3-Class Reverse recovery time: 300ns |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP15P15T | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -15A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 0.24Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: TrenchP™ Gate charge: 48nC Reverse recovery time: 116ns |
auf Bestellung 182 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1218Y | IXYS |
![]() Description: Relay: solid state; SPST-NO; 600mA; max.60VAC; max.60VDC; OptoMOS Type of relay: solid state Max. operating current: 0.6A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source Mounting: THT Case: SIP4 Body dimensions: 19.2x6.4x3.3mm Insulation voltage: 2.5kV Operating temperature: -40...85°C Turn-off time: 5ms On-state resistance: 1.1Ω Contacts configuration: SPST-NO Manufacturer series: OptoMOS Turn-on time: 5ms Kind of output: MOSFET |
auf Bestellung 136 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1393G | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC Type of relay: solid state Control current max.: 50mA Max. operating current: 90mA Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source Mounting: THT Case: DIP4 Body dimensions: 4.57x6.35x3.3mm Insulation voltage: 5kV Operating temperature: -40...85°C Turn-off time: 5ms On-state resistance: 50Ω Contacts configuration: SPST-NO Manufacturer series: OptoMOS Turn-on time: 5ms Kind of output: MOSFET |
auf Bestellung 221 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1393GV | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC Type of relay: solid state Control current max.: 50mA Max. operating current: 90mA Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source Mounting: THT Case: DIP4 Body dimensions: 4.57x6.35x3.3mm Insulation voltage: 5kV Operating temperature: -40...85°C Turn-off time: 5ms On-state resistance: 50Ω Contacts configuration: SPST-NO Manufacturer series: OptoMOS Turn-on time: 5ms Kind of output: MOSFET |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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CMA50P1600FC | IXYS |
![]() Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80/200mA; THT; tube Mounting: THT Type of thyristor: thyristor Gate current: 80/200mA Load current: 50A Max. load current: 79A Max. forward impulse current: 610A Max. off-state voltage: 1.6kV Kind of package: tube Semiconductor structure: double series Case: ISOPLUS i4-pac™ x024a |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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DMA50P1200HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-3 Mounting: THT Type of diode: rectifying Load current: 50A Max. forward impulse current: 0.5kA Max. off-state voltage: 1.2kV Kind of package: tube Semiconductor structure: double series Case: TO247-3 |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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DMA50P1200HR | IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 555A; ISO247™; 210W Mounting: THT Type of diode: rectifying Max. forward voltage: 1.28V Load current: 50A Power dissipation: 210W Max. forward impulse current: 555A Max. off-state voltage: 1.2kV Kind of package: tube Semiconductor structure: double series Case: ISO247™ |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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DMA50P1600HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-3 Mounting: THT Type of diode: rectifying Load current: 50A Max. forward impulse current: 0.5kA Max. off-state voltage: 1.6kV Kind of package: tube Semiconductor structure: double series Case: TO247-3 |
Produkt ist nicht verfügbar |
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LDA111 | IXYS |
![]() Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 3.75kV; DIP6 Case: DIP6 Kind of output: Darlington Type of optocoupler: optocoupler Mounting: THT Turn-on time: 8µs Turn-off time: 345µs Number of channels: 1 CTR@If: 300-30000%@1mA Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
LDA111S | IXYS |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A Kind of output: Darlington Type of optocoupler: optocoupler Mounting: SMD Turn-on time: 8µs Turn-off time: 345µs Number of channels: 1 Trigger current: 1A CTR@If: 300-30000%@1mA Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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LDA111STR | IXYS |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A Kind of output: Darlington Type of optocoupler: optocoupler Mounting: SMD Turn-on time: 8µs Turn-off time: 345µs Number of channels: 1 Trigger current: 1A CTR@If: 300-30000%@1mA Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFN66N85X | IXYS |
![]() Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 850V Drain current: 65A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 65mΩ Pulsed drain current: 140A Power dissipation: 830W Technology: HiPerFET™; X-Class Gate-source voltage: ±40V Mechanical mounting: screw Reverse recovery time: 250ns Gate charge: 230nC Kind of channel: enhancement |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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PLA140L | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC Manufacturer series: OptoMOS Operating temperature: -40...85°C Case: DIP6 Contacts configuration: SPST-NO Type of relay: solid state Mounting: THT Kind of output: MOSFET Turn-off time: 1ms Turn-on time: 3ms Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Max. operating current: 250mA On-state resistance: 8Ω Switched voltage: max. 400V AC; max. 400V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source |
auf Bestellung 77 Stücke: Lieferzeit 14-21 Tag (e) |
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CMA30E1600PB | IXYS |
![]() Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO220AB; THT; tube Mounting: THT Type of thyristor: thyristor Case: TO220AB Gate current: 28/50mA Load current: 30A Max. load current: 47A Max. forward impulse current: 220A Max. off-state voltage: 1.6kV Kind of package: tube |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP26N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 36A Power dissipation: 460W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN40N110P | IXYS |
![]() Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.1kV Drain current: 34A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.26Ω Pulsed drain current: 100A Power dissipation: 890W Technology: HiPerFET™; Polar™ Gate-source voltage: ±40V Mechanical mounting: screw Reverse recovery time: 300ns Gate charge: 310nC Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN40N110Q3 | IXYS |
![]() Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.1kV Drain current: 35A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.26Ω Pulsed drain current: 100A Power dissipation: 960W Technology: HiPerFET™; Q3-Class Gate-source voltage: ±40V Mechanical mounting: screw Reverse recovery time: 434ns Gate charge: 300nC Kind of channel: enhancement |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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MCD95-16IO1B | IXYS |
![]() ![]() ![]() Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk Case: TO240AA Kind of package: bulk Features of semiconductor devices: Kelvin terminal Gate current: 150/200mA Threshold on-voltage: 0.85V Max. forward voltage: 1.28V Load current: 116A Max. load current: 180A Max. forward impulse current: 2.25kA Max. off-state voltage: 1.6kV Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1540G | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source Mounting: THT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Operating temperature: -40...85°C Turn-off time: 2ms On-state resistance: 25Ω Contacts configuration: SPST-NO Manufacturer series: OptoMOS Turn-on time: 2ms Kind of output: MOSFET |
auf Bestellung 965 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC2317N | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Mounting: SMT Operating temperature: -40...85°C Kind of output: MOSFET Contacts configuration: SPST-NO + SPST-NC Case: SO8 Type of relay: solid state Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.35x3.81x2.18mm Control current max.: 50mA Max. operating current: 120mA On-state resistance: 16Ω Switched voltage: max. 60V AC; max. 60V DC Insulation voltage: 1.5kV Manufacturer series: OptoMOS Relay variant: 1-phase; current source |
auf Bestellung 82 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP34N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 96mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Technology: X2-Class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
MCD132-12io1 |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCD132-14io1 |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCD132-16io1 |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCD132-18io1 |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFL82N60P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 55A
Power dissipation: 625W
Case: ISOPLUS264™
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 55A
Power dissipation: 625W
Case: ISOPLUS264™
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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5+ | 14.36 EUR |
MCMA50P1200TA |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.48V
Load current: 50A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.48V
Load current: 50A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: thyristor
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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3+ | 27.7 EUR |
MCMA50P1600TA |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 50A; TO240AA; Ufmax: 1.48V
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.48V
Load current: 50A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 50A; TO240AA; Ufmax: 1.48V
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.48V
Load current: 50A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MDMA50P1200TG |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MDMA50P1600TG |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 50A; TO240AA; Ufmax: 1.09V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.6kV
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 50A; TO240AA; Ufmax: 1.09V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.6kV
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN50N120SK |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 54ns
Gate charge: 115nC
Kind of channel: enhancement
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 54ns
Gate charge: 115nC
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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1+ | 90.86 EUR |
IXFA130N10T2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFH230N10T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 82ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 82ns
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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7+ | 10.21 EUR |
IXFP130N10T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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16+ | 4.49 EUR |
18+ | 4.03 EUR |
20+ | 3.58 EUR |
21+ | 3.45 EUR |
CPC1560G |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-off time: 400µs
On-state resistance: 5.6Ω
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-off time: 400µs
On-state resistance: 5.6Ω
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Kind of output: MOSFET
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.56 EUR |
20+ | 3.66 EUR |
21+ | 3.46 EUR |
VVZ110-12IO7 |
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Hersteller: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E
Version: module
Case: PWS-E
Leads: M6 screws
Electrical mounting: FASTON connectors; screw
Type of bridge rectifier: half-controlled
Mechanical mounting: screw
Gate current: 100/200mA
Max. forward voltage: 1.75V
Load current: 110A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.35kA
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E
Version: module
Case: PWS-E
Leads: M6 screws
Electrical mounting: FASTON connectors; screw
Type of bridge rectifier: half-controlled
Mechanical mounting: screw
Gate current: 100/200mA
Max. forward voltage: 1.75V
Load current: 110A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.35kA
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXTH50P10 |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO247-3
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO247-3
auf Bestellung 306 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 14.26 EUR |
8+ | 9.61 EUR |
IXTT50P10 |
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Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO268
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO268
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.77 EUR |
8+ | 9.4 EUR |
9+ | 8.88 EUR |
10+ | 8.55 EUR |
IXFP60N25X3M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.24 EUR |
11+ | 6.69 EUR |
12+ | 6.32 EUR |
IXTN210P10T |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Case: SOT227B
Semiconductor structure: single transistor
Polarisation: unipolar
Pulsed drain current: -800A
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 830W
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: TrenchP™
Type of semiconductor module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Case: SOT227B
Semiconductor structure: single transistor
Polarisation: unipolar
Pulsed drain current: -800A
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 830W
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: TrenchP™
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTR210P10T |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: -195A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 8mΩ
Gate-source voltage: ±15V
Power dissipation: 390W
Kind of channel: enhancement
Technology: TrenchP™
Type of transistor: P-MOSFET
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: -195A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 8mΩ
Gate-source voltage: ±15V
Power dissipation: 390W
Kind of channel: enhancement
Technology: TrenchP™
Type of transistor: P-MOSFET
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 32.72 EUR |
30+ | 31.46 EUR |
IXTX210P10T |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Kind of channel: enhancement
Technology: TrenchP™
Type of transistor: P-MOSFET
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Kind of channel: enhancement
Technology: TrenchP™
Type of transistor: P-MOSFET
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 30.36 EUR |
10+ | 29.19 EUR |
CPC1510G |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: THT
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 15Ω
Contacts configuration: SPST-NO
Turn-on time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: THT
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 15Ω
Contacts configuration: SPST-NO
Turn-on time: 2ms
Kind of output: MOSFET
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.86 EUR |
23+ | 3.22 EUR |
24+ | 3.03 EUR |
CPC1510GS |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 15Ω
Contacts configuration: SPST-NO
Turn-on time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 15Ω
Contacts configuration: SPST-NO
Turn-on time: 2ms
Kind of output: MOSFET
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.92 EUR |
21+ | 3.47 EUR |
22+ | 3.29 EUR |
DSEC16-12A |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 40ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.94V
Load current: 8A x2
Max. forward impulse current: 40A
Power dissipation: 60W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 40ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.94V
Load current: 8A x2
Max. forward impulse current: 40A
Power dissipation: 60W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Produkt ist nicht verfügbar
Im Einkaufswagen
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DSEC16-12AS-TUB |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Power dissipation: 60W
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 1.96V
Load current: 8A x2
Max. off-state voltage: 1.2kV
Max. forward impulse current: 40A
Semiconductor structure: common cathode; double
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Power dissipation: 60W
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 1.96V
Load current: 8A x2
Max. off-state voltage: 1.2kV
Max. forward impulse current: 40A
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ120N20P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Case: TO3P
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Drain current: 120A
Power dissipation: 714W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Polarisation: unipolar
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Case: TO3P
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Drain current: 120A
Power dissipation: 714W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Polarisation: unipolar
Type of transistor: N-MOSFET
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
PLB190 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.38 EUR |
14+ | 5.13 EUR |
15+ | 4.85 EUR |
50+ | 4.76 EUR |
PLB190S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 5.96 EUR |
PLB190STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ34N65X2M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.55 EUR |
9+ | 7.97 EUR |
IXTQ48N65X2M |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 14.13 EUR |
8+ | 9.61 EUR |
IXFP60N25X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 10.18 EUR |
10+ | 7.19 EUR |
11+ | 6.81 EUR |
100+ | 6.55 EUR |
IXFK102N30P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Gate charge: 224nC
On-state resistance: 33mΩ
Power dissipation: 700W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Gate charge: 224nC
On-state resistance: 33mΩ
Power dissipation: 700W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 19.99 EUR |
5+ | 14.3 EUR |
IXTH32N65X |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 159 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.12 EUR |
11+ | 6.55 EUR |
12+ | 6.19 EUR |
IXFN240N15T2 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 460nC
Kind of channel: enhancement
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 460nC
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
DSS25-0025B |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 330A
Kind of package: tube
Power dissipation: 90W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 330A
Kind of package: tube
Power dissipation: 90W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN36N100 | ![]() |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 36A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.24Ω
Pulsed drain current: 144A
Power dissipation: 694W
Technology: HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 180ns
Gate charge: 380nC
Kind of channel: enhancement
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 36A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.24Ω
Pulsed drain current: 144A
Power dissipation: 694W
Technology: HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 180ns
Gate charge: 380nC
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 88.72 EUR |
CPC1973Y |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Case: SIP4
On-state resistance: 5Ω
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Max. operating current: 0.35mA
Turn-off time: 3ms
Turn-on time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Switched voltage: max. 400V AC
Insulation voltage: 2.5kV
Relay variant: 1-phase
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Case: SIP4
On-state resistance: 5Ω
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Max. operating current: 0.35mA
Turn-off time: 3ms
Turn-on time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Switched voltage: max. 400V AC
Insulation voltage: 2.5kV
Relay variant: 1-phase
Manufacturer series: OptoMOS
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.95 EUR |
15+ | 4.83 EUR |
16+ | 4.56 EUR |
IXFB82N60Q3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.89 EUR |
IXTP15P15T |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Gate charge: 48nC
Reverse recovery time: 116ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Gate charge: 48nC
Reverse recovery time: 116ns
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.21 EUR |
24+ | 3.06 EUR |
25+ | 2.9 EUR |
CPC1218Y |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; 600mA; max.60VAC; max.60VDC; OptoMOS
Type of relay: solid state
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: SIP4
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 1.1Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; 600mA; max.60VAC; max.60VDC; OptoMOS
Type of relay: solid state
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: SIP4
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 1.1Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.72 EUR |
16+ | 4.68 EUR |
17+ | 4.42 EUR |
CPC1393G |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 50Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 50Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
auf Bestellung 221 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.7 EUR |
33+ | 2.19 EUR |
35+ | 2.07 EUR |
CPC1393GV |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 50Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 50Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.85 EUR |
33+ | 2.19 EUR |
35+ | 2.07 EUR |
500+ | 2.03 EUR |
CMA50P1600FC |
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Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80/200mA; THT; tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 80/200mA
Load current: 50A
Max. load current: 79A
Max. forward impulse current: 610A
Max. off-state voltage: 1.6kV
Kind of package: tube
Semiconductor structure: double series
Case: ISOPLUS i4-pac™ x024a
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80/200mA; THT; tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 80/200mA
Load current: 50A
Max. load current: 79A
Max. forward impulse current: 610A
Max. off-state voltage: 1.6kV
Kind of package: tube
Semiconductor structure: double series
Case: ISOPLUS i4-pac™ x024a
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMA50P1200HB |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-3
Mounting: THT
Type of diode: rectifying
Load current: 50A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-3
Mounting: THT
Type of diode: rectifying
Load current: 50A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.14 EUR |
13+ | 5.52 EUR |
DMA50P1200HR |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 555A; ISO247™; 210W
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.28V
Load current: 50A
Power dissipation: 210W
Max. forward impulse current: 555A
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: double series
Case: ISO247™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 555A; ISO247™; 210W
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.28V
Load current: 50A
Power dissipation: 210W
Max. forward impulse current: 555A
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: double series
Case: ISO247™
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.67 EUR |
7+ | 10.54 EUR |
8+ | 9.95 EUR |
DMA50P1600HB |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-3
Mounting: THT
Type of diode: rectifying
Load current: 50A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.6kV
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-3
Mounting: THT
Type of diode: rectifying
Load current: 50A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.6kV
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LDA111 |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 3.75kV; DIP6
Case: DIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 3.75kV; DIP6
Case: DIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LDA111S |
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Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LDA111STR |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN66N85X |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 230nC
Kind of channel: enhancement
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 230nC
Kind of channel: enhancement
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 46.4 EUR |
PLA140L |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP6
Contacts configuration: SPST-NO
Type of relay: solid state
Mounting: THT
Kind of output: MOSFET
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP6
Contacts configuration: SPST-NO
Type of relay: solid state
Mounting: THT
Kind of output: MOSFET
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.45 EUR |
16+ | 4.58 EUR |
17+ | 4.32 EUR |
25+ | 4.15 EUR |
CMA30E1600PB |
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Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO220AB; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO220AB
Gate current: 28/50mA
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 220A
Max. off-state voltage: 1.6kV
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO220AB; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO220AB
Gate current: 28/50mA
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 220A
Max. off-state voltage: 1.6kV
Kind of package: tube
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.73 EUR |
28+ | 2.62 EUR |
29+ | 2.47 EUR |
50+ | 2.4 EUR |
IXFP26N65X2 |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.44 EUR |
10+ | 7.16 EUR |
IXFN40N110P |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 34A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 310nC
Kind of channel: enhancement
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 34A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 310nC
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
IXFN40N110Q3 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 35A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 434ns
Gate charge: 300nC
Kind of channel: enhancement
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 35A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 434ns
Gate charge: 300nC
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
MCD95-16IO1B |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.28V
Load current: 116A
Max. load current: 180A
Max. forward impulse current: 2.25kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.28V
Load current: 116A
Max. load current: 180A
Max. forward impulse current: 2.25kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 45 EUR |
5+ | 43.27 EUR |
CPC1540G |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 25Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 25Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 2ms
Kind of output: MOSFET
auf Bestellung 965 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.78 EUR |
27+ | 2.72 EUR |
28+ | 2.57 EUR |
500+ | 2.5 EUR |
CPC2317N |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Contacts configuration: SPST-NO + SPST-NC
Case: SO8
Type of relay: solid state
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Contacts configuration: SPST-NO + SPST-NC
Case: SO8
Type of relay: solid state
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.3 EUR |
39+ | 1.87 EUR |
41+ | 1.77 EUR |
IXTP34N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
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