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VHFD37-16IO1 VHFD37-16IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F20DBFE661D820&compId=VHFD37-ser.pdf?ci_sign=2d812ba971aecf8861ab1d3dd43e94b87114da19 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Electrical mounting: FASTON connectors
Version: module
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
Gate current: 50/80mA
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
2+40.61 EUR
3+40.6 EUR
Mindestbestellmenge: 2
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VUO80-12NO1 VUO80-12NO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880439D3F1120C4&compId=VUO80-12NO1.pdf?ci_sign=7a78f58303345089e2463f30d4c91583a53278dd Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
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LAA125P LAA125P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B3E0C7&compId=LAA125.pdf?ci_sign=2b631907f03b92f856d0d76b7c03ec658d5a2904 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x2.16mm
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP8
auf Bestellung 100 Stücke:
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16+4.75 EUR
17+4.3 EUR
18+4.08 EUR
100+3.92 EUR
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LCA125L LCA125L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977900C7&compId=LCA125L.pdf?ci_sign=bd25a905c638ad1b7c2a44af4dc9a834373d843c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Control current max.: 50mA
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.08 EUR
21+3.46 EUR
22+3.27 EUR
50+3.26 EUR
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LAA125PL LAA125PL IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B5A0C7&compId=LAA125L.pdf?ci_sign=8ce76c522e028f88ab94d53b2bb700a91cb7f50a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x2.16mm
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP8
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.22 EUR
16+4.69 EUR
17+4.43 EUR
100+4.32 EUR
Mindestbestellmenge: 9
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PLA191S PLA191S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
auf Bestellung 199 Stücke:
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13+5.73 EUR
16+4.58 EUR
17+4.32 EUR
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IXTA100N04T2 IXTA100N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E1F1BA8D9820&compId=IXTA(P)100N04T2.pdf?ci_sign=6a88636d3dd1a68af7406b8bccbef80c68bda003 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO263
On-state resistance: 7mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
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IXTN46N50L IXTN46N50L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9230E5AE5F820&compId=IXTN46N50L.pdf?ci_sign=9ab81abbb1adcc6fd1ccf3ad5339605b98bf9c2d Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.16Ω
Gate charge: 260nC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 0.6µs
Semiconductor structure: single transistor
Pulsed drain current: 100A
Type of semiconductor module: MOSFET transistor
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MDMA660U1600PTEH IXYS media?resourcetype=datasheets&itemid=6121d227-b8cc-43e1-b8e1-5fab292cc1a4&filename=littelfuse%2520power%2520semiconductors%2520mdma660u1600pteh%2520datasheet.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Case: E3-Pack
Electrical mounting: Press-Fit
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 660A
Max. forward impulse current: 5kA
auf Bestellung 22 Stücke:
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1+195.2 EUR
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IXFT400N075T2 IXFT400N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBC718478C7820&compId=IXFH(T)400N075T2.pdf?ci_sign=1602ac645fb478731e67194e85187b13cbddcb9b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns
Case: TO268
Reverse recovery time: 77ns
Drain-source voltage: 75V
Drain current: 400A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 1kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 420nC
Kind of channel: enhancement
Mounting: SMD
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DLA100B800LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAAB977D1A60C7&compId=DLA100B800LB.pdf?ci_sign=557d122348beaf5bd30d4f73c9c118239167c2c2 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Case: SMPD-B
Kind of package: tube
Max. forward voltage: 1.44V
Load current: 124A
Max. forward impulse current: 0.4kA
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
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DSEI30-10A DSEI30-10A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD568A65B4938BF&compId=DSEI30-10A.pdf?ci_sign=852498fdf79c980b238d3a278082ea33068754bc description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V
Max. off-state voltage: 1kV
Load current: 30A
Max. forward impulse current: 185A
Case: TO247-2
Kind of package: tube
Features of semiconductor devices: fast switching
Max. forward voltage: 2V
Semiconductor structure: single diode
Reverse recovery time: 35ns
Power dissipation: 138W
Type of diode: rectifying
Technology: FRED
Mounting: THT
auf Bestellung 248 Stücke:
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13+5.88 EUR
14+5.29 EUR
17+4.22 EUR
18+3.99 EUR
120+3.92 EUR
Mindestbestellmenge: 13
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DPG60C300HB DPG60C300HB IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA828AB16F72C143&compId=DPG60C300HB.pdf?ci_sign=591fb5aa9b5ad9a54b35e26906603b70f7da565b Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 360A
Case: TO247-3
Max. forward voltage: 1.39V
Power dissipation: 160W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 16 Stücke:
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12+6.49 EUR
13+5.75 EUR
14+5.18 EUR
15+4.89 EUR
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DPG60B600LB-TRR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAC451B67620C7&compId=DPG60B600LB.pdf?ci_sign=73b1deca75d8f1c3863c312794ea1d3bf02daa95 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Kind of package: reel; tape
Electrical mounting: SMT
Technology: HiPerFRED™
Type of bridge rectifier: single-phase
Case: SMPD-B
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DPG60B600LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAC451B67620C7&compId=DPG60B600LB.pdf?ci_sign=73b1deca75d8f1c3863c312794ea1d3bf02daa95 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Case: SMPD-B
Kind of package: tube
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Electrical mounting: SMT
Technology: HiPerFRED™
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
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LCA120L LCA120L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977600C7&compId=LCA120L.pdf?ci_sign=fb673220e7524f26614e617d06afa1cb250d0567 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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LCA120LS LCA120LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977600C7&compId=LCA120L.pdf?ci_sign=fb673220e7524f26614e617d06afa1cb250d0567 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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LCA120LSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977600C7&compId=LCA120L.pdf?ci_sign=fb673220e7524f26614e617d06afa1cb250d0567 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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IXFX140N30P IXFX140N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5FBBF2FB0F8BF&compId=IXFK140N30P_IXFX140N30P.pdf?ci_sign=6d081054787efa2c56b843d54a6d6c3f464460d2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™
Mounting: THT
Polarisation: unipolar
Power dissipation: 1.04kW
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Drain current: 140A
Drain-source voltage: 300V
Gate charge: 185nC
Case: PLUS247™
Kind of channel: enhancement
Kind of package: tube
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IXFX64N50P IXFX64N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC0CC4CFD77820&compId=IXFK(X)64N50P.pdf?ci_sign=7204ab845ac6e272ad03bd96c6ae51e7d9e2b498 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
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IXFX94N50P2 IXFX94N50P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A7A2ADECB4AEE74A&compId=IXFx94N50P2.pdf?ci_sign=e0921357518e552a24d181fc04f1accad62b30eb Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar2™
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IXFX170N20T IXFX170N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5344B49DB7820&compId=IXFK(X)170N20T.pdf?ci_sign=132d408b08d163a2c5614a95cdf3179fcf883841 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; PLUS247™
Mounting: THT
Case: PLUS247™
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.15kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhancement
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IXFX170N20P IXFX170N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE7919FF3517E5D4746&compId=IXF_170N20P.pdf?ci_sign=7a8e99d2eb2f7ace504a59de513ff4d7089e5376 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1250W; PLUS247™
Mounting: THT
Case: PLUS247™
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Kind of channel: enhancement
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MCC312-18io1 MCC312-18io1 IXYS Littelfuse-Power-Semiconductors-MCC312-18io1-Datasheet?assetguid=ccb9957f-c4f8-41d3-b050-597a21e46f2f Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; Y1; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y1
Max. forward voltage: 1.32V
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 12 Stücke:
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1+245.53 EUR
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MCC312-16io1 MCC312-16io1 IXYS Littelfuse-Power-Semiconductors-MCC312-16io1-Datasheet?assetguid=e89527f6-52af-4349-a7ba-66bfa2dd339a Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320A; Y1; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y1
Max. forward voltage: 1.32V
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCC312-12io1 MCC312-12io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4DA694FFC2469&compId=MCC312-12IO1.pdf?ci_sign=3f968db46db8a1b8ba38583aacd1605eca7d74da Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320A; Y1-CU; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y1-CU
Max. forward voltage: 1.32V
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 10.1kA
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MCC312-14io1 MCC312-14io1 IXYS Littelfuse-Power-Semiconductors-MCC312-14io1-Datasheet?assetguid=510c7e37-a2d0-4d07-8984-04bd56c700c6 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 320A; Y1; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y1
Max. forward voltage: 1.32V
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXFH120N20P IXFH120N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9869832FD820&compId=IXFH(K)120N20P.pdf?ci_sign=ab9ee0cda8be66ad18abdb1fb39f266891be68ee Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Case: TO247-3
Mounting: THT
Reverse recovery time: 100ns
Drain-source voltage: 200V
Drain current: 120A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 714W
Polarisation: unipolar
Kind of package: tube
Gate charge: 152nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
auf Bestellung 68 Stücke:
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CPC3701CTR CPC3701CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE7919FFA760F104746&compId=CPC3701.pdf?ci_sign=3b686c50781704a72018b86754c7a8d41bba5ce4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 960 Stücke:
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89+0.8 EUR
140+0.51 EUR
148+0.48 EUR
500+0.47 EUR
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DPG15I300PA DPG15I300PA IXYS Littelfuse-Power-Semiconductors-DPG15I300PA-Datasheet?assetguid=31AF2C96-8FF5-49B1-80B7-FE9209F6A1EA Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15A; tube; Ifsm: 240A; TO220AC; 90W
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AC
Max. off-state voltage: 300V
Max. forward voltage: 1.26V
Load current: 15A
Semiconductor structure: single diode
auf Bestellung 100 Stücke:
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DPG15I400PM DPG15I400PM IXYS Littelfuse-Power-Semiconductors-DPG15I400PM-Datasheet?assetguid=35351A1B-7A9F-4540-9789-7981B9CF6EC1 Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 190A; TO220FP-2; 35W
Reverse recovery time: 45ns
Max. forward impulse current: 190A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.39V
Load current: 15A
Semiconductor structure: single diode
auf Bestellung 171 Stücke:
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DPG15I200PA DPG15I200PA IXYS Littelfuse-Power-Semiconductors-DPG15I200PA-Datasheet?assetguid=54180CEE-BE58-4F2E-B23D-CC4C70F44A3F Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 240A; TO220AC; 90W
Case: TO220AC
Max. off-state voltage: 200V
Max. forward voltage: 1.26V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
auf Bestellung 23 Stücke:
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23+3.1 EUR
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IXXH100N60B3 IXXH100N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB4A5F5037D820&compId=IXXH100N60B3.pdf?ci_sign=0b1678af7c3157780613381fd45916184563f06e Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 830W
Turn-off time: 350ns
Turn-on time: 92ns
Kind of package: tube
Case: TO247-3
Pulsed collector current: 480A
Collector current: 100A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Gate charge: 143nC
Technology: GenX3™; Planar; XPT™
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DLA100B1200LB-TUB DLA100B1200LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87FF8D2A340060C4&compId=DLA100B1200LB.pdf?ci_sign=6296754d046772e4fd96965d73e1d8054b583293 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Case: SMPD-B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
Load current: 124A
Max. forward impulse current: 0.4kA
Kind of package: tube
Electrical mounting: SMT
Type of bridge rectifier: single-phase
auf Bestellung 39 Stücke:
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4+21.36 EUR
20+21.06 EUR
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IXDN609SI IXDN609SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 1593 Stücke:
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32+2.25 EUR
34+2.12 EUR
200+2.04 EUR
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IXDN609SIA IXDN609SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 427 Stücke:
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47+1.54 EUR
50+1.43 EUR
53+1.36 EUR
100+1.32 EUR
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IXDN609PI IXDN609PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 718 Stücke:
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34+2.12 EUR
46+1.56 EUR
50+1.46 EUR
53+1.36 EUR
100+1.32 EUR
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IXDN609YI IXDN609YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 814 Stücke:
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27+2.73 EUR
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100+2.49 EUR
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VUO36-16NO8 VUO36-16NO8 IXYS pVersion=0046&contRep=ZT&docId=E29209FA28E699F19A99005056AB752F&compId=VUO36.pdf?ci_sign=792581ee186cb851d5a743fcb3669bc2c4c9bd6d Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 27A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: square
Max. forward voltage: 1.05V
Leads: connectors
Case: FO-B
Leads dimensions: 6.3x0.8mm
auf Bestellung 111 Stücke:
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50+13.46 EUR
100+13.2 EUR
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IXYH30N65C3 IXYH30N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8FA49F63C7820&compId=IXYH(P)30N65C3.pdf?ci_sign=b199e109e3ab7a2153ecd617407198b811892fd9 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate charge: 44nC
Produkt ist nicht verfügbar
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IXYP30N65C3 IXYP30N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8FA49F63C7820&compId=IXYH(P)30N65C3.pdf?ci_sign=b199e109e3ab7a2153ecd617407198b811892fd9 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Pulsed collector current: 118A
Collector current: 30A
Produkt ist nicht verfügbar
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IXYH30N65C3H1 IXYH30N65C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8173C8A8ADE0C4&compId=IXY_30N65C3H1_HV.pdf?ci_sign=fe90d70eb5a4baa936f0659d92f838d1ceb9cd3a Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Pulsed collector current: 118A
Collector current: 30A
Produkt ist nicht verfügbar
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IXYT30N65C3H1HV IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8173C8A8ADE0C4&compId=IXY_30N65C3H1_HV.pdf?ci_sign=fe90d70eb5a4baa936f0659d92f838d1ceb9cd3a Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Pulsed collector current: 118A
Collector current: 30A
Produkt ist nicht verfügbar
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LF2136BTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F27090BC18C0CE&compId=LF2136BTR.pdf?ci_sign=7d4488ec65212ff10c76d0a7eb8b2083d5f4913f Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -0.35...0.2A
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: reel; tape
Voltage class: 600V
Produkt ist nicht verfügbar
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PBA150S PBA150S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26AB60C7&compId=PBA150.pdf?ci_sign=95c39d9d73c016e3ffd8e8cb2457778578aa240e Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Case: DIP8
auf Bestellung 47 Stücke:
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9+8.72 EUR
11+6.68 EUR
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CPC2317NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891960C7&compId=CPC2317N.pdf?ci_sign=29adb11cf05dc8881e900756a93efa2a5d0cc008 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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IXGH10N170A IXGH10N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A98EA1E25B38BF&compId=IXG_10N170A.pdf?ci_sign=43009bf67308e8af9bb85474249e61e9278ec252 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Gate-emitter voltage: ±20V
Collector current: 5A
Pulsed collector current: 20A
Turn-on time: 107ns
Turn-off time: 240ns
Type of transistor: IGBT
Power dissipation: 140W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 29nC
Technology: NPT
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.7kV
auf Bestellung 2 Stücke:
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2+35.75 EUR
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IXGH24N170 IXGH24N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3D3296E6F820&compId=IXGH(T)24N170.pdf?ci_sign=bcf829c7a280c895f4c01ef3c947f0ab37ed7901 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 150A
Turn-on time: 105ns
Turn-off time: 560ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 106nC
Technology: NPT
Mounting: THT
auf Bestellung 9 Stücke:
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4+18.56 EUR
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IXGH32N170 IXGH32N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF680363E99820&compId=IXGH(t)32N170.pdf?ci_sign=9963563482ba752aee4d73fdf7543cee510e34e6 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
auf Bestellung 7 Stücke:
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4+22.35 EUR
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IXFP270N06T3 IXFP270N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; TrenchT3™
Reverse recovery time: 47ns
Produkt ist nicht verfügbar
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IXFA270N06T3 IXFA270N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; TrenchT3™
Reverse recovery time: 47ns
Produkt ist nicht verfügbar
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IXTY44N10T IXTY44N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Drain-source voltage: 100V
Drain current: 44A
Case: TO252
Polarisation: unipolar
On-state resistance: 30mΩ
Power dissipation: 130W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Kind of channel: enhancement
Mounting: SMD
Reverse recovery time: 60ns
Type of transistor: N-MOSFET
auf Bestellung 305 Stücke:
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25+2.97 EUR
40+1.8 EUR
43+1.7 EUR
70+1.63 EUR
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IXFK220N20X3 IXFK220N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Case: TO264
Mounting: THT
Reverse recovery time: 116ns
Drain-source voltage: 200V
Drain current: 220A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.59 EUR
5+17.59 EUR
10+16.9 EUR
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IXBH42N170 IXBH42N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1C570134958BF&compId=IXBH42N170_IXBT42N170.pdf?ci_sign=b7a57f2357e60d94d3088f969bde87ef72390bf7 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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DSEP12-12A DSEP12-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEEF452F4F42143&compId=DSEP12-12A.pdf?ci_sign=0cc1292922f483364547a0e801999c0e23b38784 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.4 EUR
34+2.13 EUR
36+2 EUR
Mindestbestellmenge: 22
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DSEP12-12AZ-TUB DSEP12-12AZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4C180AC36E0C4&compId=DSEP12-12AZ.pdf?ci_sign=956cc442568388d17ac272cecda55173443e4967 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; TO263ABHV; Ufmax: 1.87V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.66 EUR
22+3.27 EUR
28+2.62 EUR
29+2.47 EUR
Mindestbestellmenge: 20
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IXTH240N15X4 IXTH240N15X4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2893FF06D6A1820&compId=IXTH240N15X4_HV.pdf?ci_sign=6c49c71e701458fcf3a6a27674e191c3a96a46b4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 940W
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 130ns
Drain-source voltage: 150V
Drain current: 240A
On-state resistance: 4.4mΩ
Features of semiconductor devices: ultra junction x-class
Gate charge: 195nC
Kind of channel: enhancement
auf Bestellung 123 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.92 EUR
6+12.01 EUR
30+11.9 EUR
60+11.54 EUR
Mindestbestellmenge: 5
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IXTA110N055T2 IXTA110N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A327B8DD935820&compId=IXTA(P)110N055T2.pdf?ci_sign=95ba3ca6ece76e436480df8f9f361f529bc19588 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Produkt ist nicht verfügbar
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MCD162-16io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DSEI2X31-10B DSEI2X31-10B IXYS DSEI2x30-10B_DSEI2x31-10B.pdf Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 30A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 2V
Max. forward impulse current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
3+27.47 EUR
10+26.41 EUR
Mindestbestellmenge: 3
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VHFD37-16IO1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F20DBFE661D820&compId=VHFD37-ser.pdf?ci_sign=2d812ba971aecf8861ab1d3dd43e94b87114da19
VHFD37-16IO1
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Electrical mounting: FASTON connectors
Version: module
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
Gate current: 50/80mA
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+40.61 EUR
3+40.6 EUR
Mindestbestellmenge: 2
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VUO80-12NO1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880439D3F1120C4&compId=VUO80-12NO1.pdf?ci_sign=7a78f58303345089e2463f30d4c91583a53278dd
VUO80-12NO1
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
Produkt ist nicht verfügbar
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LAA125P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B3E0C7&compId=LAA125.pdf?ci_sign=2b631907f03b92f856d0d76b7c03ec658d5a2904
LAA125P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x2.16mm
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP8
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.75 EUR
17+4.3 EUR
18+4.08 EUR
100+3.92 EUR
Mindestbestellmenge: 16
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LCA125L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977900C7&compId=LCA125L.pdf?ci_sign=bd25a905c638ad1b7c2a44af4dc9a834373d843c
LCA125L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Control current max.: 50mA
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.08 EUR
21+3.46 EUR
22+3.27 EUR
50+3.26 EUR
Mindestbestellmenge: 12
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LAA125PL pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B5A0C7&compId=LAA125L.pdf?ci_sign=8ce76c522e028f88ab94d53b2bb700a91cb7f50a
LAA125PL
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x2.16mm
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP8
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.22 EUR
16+4.69 EUR
17+4.43 EUR
100+4.32 EUR
Mindestbestellmenge: 9
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PLA191S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b
PLA191S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.73 EUR
16+4.58 EUR
17+4.32 EUR
Mindestbestellmenge: 13
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IXTA100N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E1F1BA8D9820&compId=IXTA(P)100N04T2.pdf?ci_sign=6a88636d3dd1a68af7406b8bccbef80c68bda003
IXTA100N04T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO263
On-state resistance: 7mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
Produkt ist nicht verfügbar
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IXTN46N50L pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9230E5AE5F820&compId=IXTN46N50L.pdf?ci_sign=9ab81abbb1adcc6fd1ccf3ad5339605b98bf9c2d
IXTN46N50L
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.16Ω
Gate charge: 260nC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 0.6µs
Semiconductor structure: single transistor
Pulsed drain current: 100A
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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MDMA660U1600PTEH media?resourcetype=datasheets&itemid=6121d227-b8cc-43e1-b8e1-5fab292cc1a4&filename=littelfuse%2520power%2520semiconductors%2520mdma660u1600pteh%2520datasheet.pdf
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Case: E3-Pack
Electrical mounting: Press-Fit
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 660A
Max. forward impulse current: 5kA
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+195.2 EUR
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IXFT400N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBC718478C7820&compId=IXFH(T)400N075T2.pdf?ci_sign=1602ac645fb478731e67194e85187b13cbddcb9b
IXFT400N075T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns
Case: TO268
Reverse recovery time: 77ns
Drain-source voltage: 75V
Drain current: 400A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 1kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 420nC
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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DLA100B800LB-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAAB977D1A60C7&compId=DLA100B800LB.pdf?ci_sign=557d122348beaf5bd30d4f73c9c118239167c2c2
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Case: SMPD-B
Kind of package: tube
Max. forward voltage: 1.44V
Load current: 124A
Max. forward impulse current: 0.4kA
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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DSEI30-10A description pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD568A65B4938BF&compId=DSEI30-10A.pdf?ci_sign=852498fdf79c980b238d3a278082ea33068754bc
DSEI30-10A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V
Max. off-state voltage: 1kV
Load current: 30A
Max. forward impulse current: 185A
Case: TO247-2
Kind of package: tube
Features of semiconductor devices: fast switching
Max. forward voltage: 2V
Semiconductor structure: single diode
Reverse recovery time: 35ns
Power dissipation: 138W
Type of diode: rectifying
Technology: FRED
Mounting: THT
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.88 EUR
14+5.29 EUR
17+4.22 EUR
18+3.99 EUR
120+3.92 EUR
Mindestbestellmenge: 13
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DPG60C300HB pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA828AB16F72C143&compId=DPG60C300HB.pdf?ci_sign=591fb5aa9b5ad9a54b35e26906603b70f7da565b
DPG60C300HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 360A
Case: TO247-3
Max. forward voltage: 1.39V
Power dissipation: 160W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.49 EUR
13+5.75 EUR
14+5.18 EUR
15+4.89 EUR
Mindestbestellmenge: 12
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DPG60B600LB-TRR pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAC451B67620C7&compId=DPG60B600LB.pdf?ci_sign=73b1deca75d8f1c3863c312794ea1d3bf02daa95
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Kind of package: reel; tape
Electrical mounting: SMT
Technology: HiPerFRED™
Type of bridge rectifier: single-phase
Case: SMPD-B
Produkt ist nicht verfügbar
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DPG60B600LB-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAC451B67620C7&compId=DPG60B600LB.pdf?ci_sign=73b1deca75d8f1c3863c312794ea1d3bf02daa95
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Case: SMPD-B
Kind of package: tube
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Electrical mounting: SMT
Technology: HiPerFRED™
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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LCA120L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977600C7&compId=LCA120L.pdf?ci_sign=fb673220e7524f26614e617d06afa1cb250d0567
LCA120L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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LCA120LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977600C7&compId=LCA120L.pdf?ci_sign=fb673220e7524f26614e617d06afa1cb250d0567
LCA120LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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LCA120LSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977600C7&compId=LCA120L.pdf?ci_sign=fb673220e7524f26614e617d06afa1cb250d0567
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXFX140N30P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5FBBF2FB0F8BF&compId=IXFK140N30P_IXFX140N30P.pdf?ci_sign=6d081054787efa2c56b843d54a6d6c3f464460d2
IXFX140N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™
Mounting: THT
Polarisation: unipolar
Power dissipation: 1.04kW
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Drain current: 140A
Drain-source voltage: 300V
Gate charge: 185nC
Case: PLUS247™
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
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IXFX64N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC0CC4CFD77820&compId=IXFK(X)64N50P.pdf?ci_sign=7204ab845ac6e272ad03bd96c6ae51e7d9e2b498
IXFX64N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX94N50P2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A7A2ADECB4AEE74A&compId=IXFx94N50P2.pdf?ci_sign=e0921357518e552a24d181fc04f1accad62b30eb
IXFX94N50P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar2™
Produkt ist nicht verfügbar
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IXFX170N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5344B49DB7820&compId=IXFK(X)170N20T.pdf?ci_sign=132d408b08d163a2c5614a95cdf3179fcf883841
IXFX170N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; PLUS247™
Mounting: THT
Case: PLUS247™
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.15kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX170N20P pVersion=0046&contRep=ZT&docId=005056AB752F1EE7919FF3517E5D4746&compId=IXF_170N20P.pdf?ci_sign=7a8e99d2eb2f7ace504a59de513ff4d7089e5376
IXFX170N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1250W; PLUS247™
Mounting: THT
Case: PLUS247™
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MCC312-18io1 Littelfuse-Power-Semiconductors-MCC312-18io1-Datasheet?assetguid=ccb9957f-c4f8-41d3-b050-597a21e46f2f
MCC312-18io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; Y1; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y1
Max. forward voltage: 1.32V
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+245.53 EUR
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MCC312-16io1 Littelfuse-Power-Semiconductors-MCC312-16io1-Datasheet?assetguid=e89527f6-52af-4349-a7ba-66bfa2dd339a
MCC312-16io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320A; Y1; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y1
Max. forward voltage: 1.32V
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCC312-12io1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4DA694FFC2469&compId=MCC312-12IO1.pdf?ci_sign=3f968db46db8a1b8ba38583aacd1605eca7d74da
MCC312-12io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320A; Y1-CU; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y1-CU
Max. forward voltage: 1.32V
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 10.1kA
Produkt ist nicht verfügbar
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MCC312-14io1 Littelfuse-Power-Semiconductors-MCC312-14io1-Datasheet?assetguid=510c7e37-a2d0-4d07-8984-04bd56c700c6
MCC312-14io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 320A; Y1; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y1
Max. forward voltage: 1.32V
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFH120N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9869832FD820&compId=IXFH(K)120N20P.pdf?ci_sign=ab9ee0cda8be66ad18abdb1fb39f266891be68ee
IXFH120N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Case: TO247-3
Mounting: THT
Reverse recovery time: 100ns
Drain-source voltage: 200V
Drain current: 120A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 714W
Polarisation: unipolar
Kind of package: tube
Gate charge: 152nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.27 EUR
7+10.87 EUR
Mindestbestellmenge: 6
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CPC3701CTR pVersion=0046&contRep=ZT&docId=005056AB752F1EE7919FFA760F104746&compId=CPC3701.pdf?ci_sign=3b686c50781704a72018b86754c7a8d41bba5ce4
CPC3701CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
89+0.8 EUR
140+0.51 EUR
148+0.48 EUR
500+0.47 EUR
Mindestbestellmenge: 61
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DPG15I300PA Littelfuse-Power-Semiconductors-DPG15I300PA-Datasheet?assetguid=31AF2C96-8FF5-49B1-80B7-FE9209F6A1EA
DPG15I300PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15A; tube; Ifsm: 240A; TO220AC; 90W
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AC
Max. off-state voltage: 300V
Max. forward voltage: 1.26V
Load current: 15A
Semiconductor structure: single diode
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.22 EUR
45+1.62 EUR
47+1.53 EUR
Mindestbestellmenge: 23
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DPG15I400PM Littelfuse-Power-Semiconductors-DPG15I400PM-Datasheet?assetguid=35351A1B-7A9F-4540-9789-7981B9CF6EC1
DPG15I400PM
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 190A; TO220FP-2; 35W
Reverse recovery time: 45ns
Max. forward impulse current: 190A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.39V
Load current: 15A
Semiconductor structure: single diode
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.43 EUR
67+1.07 EUR
71+1.02 EUR
Mindestbestellmenge: 30
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DPG15I200PA Littelfuse-Power-Semiconductors-DPG15I200PA-Datasheet?assetguid=54180CEE-BE58-4F2E-B23D-CC4C70F44A3F
DPG15I200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 240A; TO220AC; 90W
Case: TO220AC
Max. off-state voltage: 200V
Max. forward voltage: 1.26V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.1 EUR
Mindestbestellmenge: 23
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IXXH100N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB4A5F5037D820&compId=IXXH100N60B3.pdf?ci_sign=0b1678af7c3157780613381fd45916184563f06e
IXXH100N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 830W
Turn-off time: 350ns
Turn-on time: 92ns
Kind of package: tube
Case: TO247-3
Pulsed collector current: 480A
Collector current: 100A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Gate charge: 143nC
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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DLA100B1200LB-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87FF8D2A340060C4&compId=DLA100B1200LB.pdf?ci_sign=6296754d046772e4fd96965d73e1d8054b583293
DLA100B1200LB-TUB
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Case: SMPD-B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
Load current: 124A
Max. forward impulse current: 0.4kA
Kind of package: tube
Electrical mounting: SMT
Type of bridge rectifier: single-phase
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.36 EUR
20+21.06 EUR
Mindestbestellmenge: 4
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IXDN609SI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDN609SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 1593 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.36 EUR
32+2.25 EUR
34+2.12 EUR
200+2.04 EUR
Mindestbestellmenge: 22
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IXDN609SIA pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDN609SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.12 EUR
47+1.54 EUR
50+1.43 EUR
53+1.36 EUR
100+1.32 EUR
Mindestbestellmenge: 34
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IXDN609PI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDN609PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 718 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.12 EUR
46+1.56 EUR
50+1.46 EUR
53+1.36 EUR
100+1.32 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IXDN609YI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDN609YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 814 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.69 EUR
27+2.73 EUR
28+2.59 EUR
100+2.49 EUR
Mindestbestellmenge: 20
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VUO36-16NO8 pVersion=0046&contRep=ZT&docId=E29209FA28E699F19A99005056AB752F&compId=VUO36.pdf?ci_sign=792581ee186cb851d5a743fcb3669bc2c4c9bd6d
VUO36-16NO8
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 27A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: square
Max. forward voltage: 1.05V
Leads: connectors
Case: FO-B
Leads dimensions: 6.3x0.8mm
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.36 EUR
5+14.53 EUR
6+13.73 EUR
50+13.46 EUR
100+13.2 EUR
Mindestbestellmenge: 4
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IXYH30N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8FA49F63C7820&compId=IXYH(P)30N65C3.pdf?ci_sign=b199e109e3ab7a2153ecd617407198b811892fd9
IXYH30N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate charge: 44nC
Produkt ist nicht verfügbar
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IXYP30N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8FA49F63C7820&compId=IXYH(P)30N65C3.pdf?ci_sign=b199e109e3ab7a2153ecd617407198b811892fd9
IXYP30N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Pulsed collector current: 118A
Collector current: 30A
Produkt ist nicht verfügbar
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IXYH30N65C3H1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8173C8A8ADE0C4&compId=IXY_30N65C3H1_HV.pdf?ci_sign=fe90d70eb5a4baa936f0659d92f838d1ceb9cd3a
IXYH30N65C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Pulsed collector current: 118A
Collector current: 30A
Produkt ist nicht verfügbar
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IXYT30N65C3H1HV pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8173C8A8ADE0C4&compId=IXY_30N65C3H1_HV.pdf?ci_sign=fe90d70eb5a4baa936f0659d92f838d1ceb9cd3a
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Pulsed collector current: 118A
Collector current: 30A
Produkt ist nicht verfügbar
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LF2136BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F27090BC18C0CE&compId=LF2136BTR.pdf?ci_sign=7d4488ec65212ff10c76d0a7eb8b2083d5f4913f
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -0.35...0.2A
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: reel; tape
Voltage class: 600V
Produkt ist nicht verfügbar
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PBA150S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26AB60C7&compId=PBA150.pdf?ci_sign=95c39d9d73c016e3ffd8e8cb2457778578aa240e
PBA150S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Case: DIP8
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.72 EUR
11+6.68 EUR
Mindestbestellmenge: 9
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CPC2317NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891960C7&compId=CPC2317N.pdf?ci_sign=29adb11cf05dc8881e900756a93efa2a5d0cc008
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXGH10N170A pVersion=0046&contRep=ZT&docId=005056AB82531EE995A98EA1E25B38BF&compId=IXG_10N170A.pdf?ci_sign=43009bf67308e8af9bb85474249e61e9278ec252
IXGH10N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Gate-emitter voltage: ±20V
Collector current: 5A
Pulsed collector current: 20A
Turn-on time: 107ns
Turn-off time: 240ns
Type of transistor: IGBT
Power dissipation: 140W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 29nC
Technology: NPT
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.7kV
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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IXGH24N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3D3296E6F820&compId=IXGH(T)24N170.pdf?ci_sign=bcf829c7a280c895f4c01ef3c947f0ab37ed7901
IXGH24N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 150A
Turn-on time: 105ns
Turn-off time: 560ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 106nC
Technology: NPT
Mounting: THT
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.56 EUR
Mindestbestellmenge: 4
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IXGH32N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF680363E99820&compId=IXGH(t)32N170.pdf?ci_sign=9963563482ba752aee4d73fdf7543cee510e34e6
IXGH32N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+22.35 EUR
Mindestbestellmenge: 4
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IXFP270N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f
IXFP270N06T3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; TrenchT3™
Reverse recovery time: 47ns
Produkt ist nicht verfügbar
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IXFA270N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f
IXFA270N06T3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; TrenchT3™
Reverse recovery time: 47ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTY44N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a
IXTY44N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Drain-source voltage: 100V
Drain current: 44A
Case: TO252
Polarisation: unipolar
On-state resistance: 30mΩ
Power dissipation: 130W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Kind of channel: enhancement
Mounting: SMD
Reverse recovery time: 60ns
Type of transistor: N-MOSFET
auf Bestellung 305 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.97 EUR
40+1.8 EUR
43+1.7 EUR
70+1.63 EUR
Mindestbestellmenge: 25
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IXFK220N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c
IXFK220N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Case: TO264
Mounting: THT
Reverse recovery time: 116ns
Drain-source voltage: 200V
Drain current: 220A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.59 EUR
5+17.59 EUR
10+16.9 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXBH42N170 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1C570134958BF&compId=IXBH42N170_IXBT42N170.pdf?ci_sign=b7a57f2357e60d94d3088f969bde87ef72390bf7
IXBH42N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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DSEP12-12A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEEF452F4F42143&compId=DSEP12-12A.pdf?ci_sign=0cc1292922f483364547a0e801999c0e23b38784
DSEP12-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.4 EUR
34+2.13 EUR
36+2 EUR
Mindestbestellmenge: 22
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DSEP12-12AZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4C180AC36E0C4&compId=DSEP12-12AZ.pdf?ci_sign=956cc442568388d17ac272cecda55173443e4967
DSEP12-12AZ-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; TO263ABHV; Ufmax: 1.87V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.66 EUR
22+3.27 EUR
28+2.62 EUR
29+2.47 EUR
Mindestbestellmenge: 20
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IXTH240N15X4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2893FF06D6A1820&compId=IXTH240N15X4_HV.pdf?ci_sign=6c49c71e701458fcf3a6a27674e191c3a96a46b4
IXTH240N15X4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 940W
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 130ns
Drain-source voltage: 150V
Drain current: 240A
On-state resistance: 4.4mΩ
Features of semiconductor devices: ultra junction x-class
Gate charge: 195nC
Kind of channel: enhancement
auf Bestellung 123 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.92 EUR
6+12.01 EUR
30+11.9 EUR
60+11.54 EUR
Mindestbestellmenge: 5
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IXTA110N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A327B8DD935820&compId=IXTA(P)110N055T2.pdf?ci_sign=95ba3ca6ece76e436480df8f9f361f529bc19588
IXTA110N055T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Produkt ist nicht verfügbar
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MCD162-16io1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DSEI2X31-10B DSEI2x30-10B_DSEI2x31-10B.pdf
DSEI2X31-10B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 30A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 2V
Max. forward impulse current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+27.47 EUR
10+26.41 EUR
Mindestbestellmenge: 3
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