Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTK110N20L2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 110A Power dissipation: 960W Case: TO264 On-state resistance: 24mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 420ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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OMA160 | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 50mA Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 100Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 125µs Turn-off time: 125µs |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1010N | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 11.5Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CPC1010NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 11.5Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CPC1020NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 1.2A Switched voltage: max. 30V AC; max. 30V DC Manufacturer series: OptoMOS Relay variant: current source On-state resistance: 0.25Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CPC1025NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC Switched voltage: max. 400V AC; max. 400V DC Operating temperature: -40...85°C Manufacturer series: OptoMOS Contacts configuration: SPST-NO Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Insulation voltage: 1.5kV Kind of output: MOSFET Body dimensions: 4.09x3.81x2.03mm Turn-off time: 1ms Turn-on time: 2ms Control current max.: 50mA On-state resistance: 30Ω Case: SOP4 Mounting: SMT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CPC1019NTR | IXYS |
![]() Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C Type of relay: solid state Max. operating current: 750mA Switched voltage: max. 60V DC Mounting: SMT Case: SOP4 Manufacturer series: OptoMOS Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...85°C Turn-on time: 3ms Turn-off time: 3ms Contacts configuration: SPST-NO On-state resistance: 0.6Ω Control current max.: 50mA Kind of output: MOSFET Insulation voltage: 1.5kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CPC1004NTR | IXYS |
![]() Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV Type of relay: solid state Max. operating current: 300mA Switched voltage: max. 100V DC Mounting: SMT Case: SOP4 Relay variant: current source Manufacturer series: OptoMOS Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...110°C Turn-on time: 3ms Turn-off time: 1ms Contacts configuration: SPST-NO On-state resistance: 4Ω Control current max.: 50mA Kind of output: MOSFET Insulation voltage: 1.5kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CPC1009NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC Switched voltage: max. 100V AC; max. 100V DC Operating temperature: -40...85°C Manufacturer series: OptoMOS Contacts configuration: SPST-NO Max. operating current: 150mA Type of relay: solid state Relay variant: 1-phase; current source Insulation voltage: 1.5kV Kind of output: MOSFET Body dimensions: 4.09x3.81x2.03mm Turn-off time: 0.5ms Turn-on time: 2ms Control current max.: 50mA On-state resistance: 8Ω Case: SOP4 Mounting: SMT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CPC1030NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CPC1001NTR | IXYS |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C Switched voltage: max. 30V DC Operating temperature: -40...85°C CTR@If: 100-800%@0.2mA Max. operating current: 0.1A Insulation voltage: 1.5kV Kind of output: transistor Number of channels: 1 Turn-off time: 30µs Turn-on time: 1µs Control current max.: 5mA Case: SOP4 Type of optocoupler: optocoupler Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CPC1006NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 75mA Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 10Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFN400N15X3 | IXYS |
![]() Description: Module; single transistor; 150V; 400A; SOT227B; screw; Idm: 900A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 150V Drain current: 400A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 2.5mΩ Pulsed drain current: 900A Power dissipation: 695W Technology: HiPerFET™; X3-Class Gate-source voltage: ±30V Mechanical mounting: screw Gate charge: 365nC Reverse recovery time: 132ns Kind of channel: enhancement |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEP60-12A | IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 0.5kA Case: TO247-2 Max. forward voltage: 1.81V Power dissipation: 330W Reverse recovery time: 40ns Technology: HiPerFRED™ |
auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEP60-12AR | IXYS |
![]() ![]() Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™ Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 0.5kA Case: ISOPLUS247™ Max. forward voltage: 2.66V Power dissipation: 230W Reverse recovery time: 40ns Technology: HiPerFRED™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXDN609CI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 105ns Turn-on time: 115ns |
auf Bestellung 1082 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDD614CI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 130ns Turn-on time: 140ns |
auf Bestellung 824 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1706Y | IXYS |
![]() Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; -40÷85°C Type of relay: solid state Control current max.: 50mA Max. operating current: 4A Switched voltage: max. 60V DC Relay variant: current source Mounting: THT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Insulation voltage: 2.5kV Turn-off time: 2ms Turn-on time: 5ms On-state resistance: 90mΩ Contacts configuration: SPST-NO Manufacturer series: OptoMOS Kind of output: MOSFET |
auf Bestellung 124 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP12N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Gate charge: 29nC On-state resistance: 0.5Ω Kind of channel: enhancement Drain current: 12A Drain-source voltage: 500V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
MIXG330PF1200PTSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Case: SimBus F Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Technology: X2PT Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: IGBT half-bridge; NTC thermistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
MIXG330PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Case: SimBus F Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: X2PT Topology: IGBT half-bridge; NTC thermistor Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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CPC5602CTR | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223 Kind of package: reel; tape Kind of channel: depletion Mounting: SMD Type of transistor: N-MOSFET Drain current: 0.13A Power dissipation: 2.5W On-state resistance: 14Ω Gate-source voltage: ±20V Drain-source voltage: 350V Case: SOT223 Polarisation: unipolar |
auf Bestellung 586 Stücke: Lieferzeit 14-21 Tag (e) |
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VHFD37-16IO1 | IXYS |
![]() Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw Type of bridge rectifier: half-controlled Max. off-state voltage: 1.6kV Load current: 40A Max. forward impulse current: 280A Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Case: V1-A-Pack Leads: connectors Gate current: 50/80mA Features of semiconductor devices: field diodes; freewheelling diode Leads dimensions: 2x0.5mm |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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PLA191S | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC Manufacturer series: OptoMOS Case: DIP6 Kind of output: MOSFET Contacts configuration: SPST-NO Mounting: SMT Type of relay: solid state Operating temperature: -40...85°C Turn-off time: 1ms Turn-on time: 3ms Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Max. operating current: 250mA On-state resistance: 8Ω Switched voltage: max. 400V AC; max. 400V DC Insulation voltage: 5kV Relay variant: 1-phase; current source |
auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) |
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MDMA660U1600PTEH | IXYS |
![]() Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module Case: E3-Pack Mechanical mounting: screw Electrical mounting: Press-Fit Version: module Load current: 660A Max. forward impulse current: 5kA Max. off-state voltage: 1.6kV Type of bridge rectifier: three-phase |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEI30-10A | IXYS |
![]() ![]() Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 185A Case: TO247-2 Max. forward voltage: 2V Power dissipation: 138W Reverse recovery time: 35ns Technology: FRED |
auf Bestellung 212 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH120N20P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 120A Power dissipation: 714W Case: TO247-3 On-state resistance: 22mΩ Mounting: THT Gate charge: 152nC Kind of channel: enhancement Reverse recovery time: 100ns Kind of package: tube |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC3701CTR | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89 Case: SOT89 Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 0.6A On-state resistance: 1Ω Power dissipation: 1.1W Gate-source voltage: ±15V Drain-source voltage: 60V |
auf Bestellung 960 Stücke: Lieferzeit 14-21 Tag (e) |
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IXXH100N60B3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3 Mounting: THT Turn-off time: 350ns Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 480A Collector-emitter voltage: 600V Power dissipation: 830W Technology: GenX3™; Planar; XPT™ Type of transistor: IGBT Case: TO247-3 Kind of package: tube Turn-on time: 92ns Gate charge: 143nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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DLA100B1200LB-TUB | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 124A Max. forward impulse current: 0.4kA Case: SMPD-B Electrical mounting: SMT Kind of package: tube Max. forward voltage: 1.23V |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN609SI | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 105ns Turn-on time: 115ns |
auf Bestellung 1580 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN609SIA | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 105ns Turn-on time: 115ns |
auf Bestellung 427 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN609PI | IXYS |
![]() Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 105ns Turn-on time: 115ns |
auf Bestellung 718 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN609YI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V Case: TO263-5 Mounting: SMD Kind of package: tube Output current: -9...9A Type of integrated circuit: driver Number of channels: 1 Kind of output: non-inverting Kind of integrated circuit: gate driver; low-side Operating temperature: -40...125°C Supply voltage: 4.5...35V Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 814 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYH30N65C3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 270W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 118A Turn-on time: 59ns Turn-off time: 0.12µs Gate charge: 44nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
LF2136BTR | IXYS |
![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Output current: -0.35...0.2A Operating temperature: -40...125°C Supply voltage: 10...20V Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Mounting: SMD Number of channels: 6 Voltage class: 600V Kind of package: reel; tape Case: SO28 Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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PBA150S | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA Mounting: SMT Case: DIP8 Operating temperature: -40...85°C On-state resistance: 7Ω Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Turn-off time: 2.5ms Turn-on time: 2.5ms Body dimensions: 9.65x6.35x3.3mm Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 250V AC; max. 250V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Manufacturer series: OptoMOS |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGH10N170A | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3 Mounting: THT Features of semiconductor devices: high voltage Type of transistor: IGBT Technology: NPT Case: TO247-3 Kind of package: tube Gate charge: 29nC Turn-on time: 107ns Turn-off time: 240ns Collector current: 5A Pulsed collector current: 20A Gate-emitter voltage: ±20V Power dissipation: 140W Collector-emitter voltage: 1.7kV |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH240N15X4 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 940W Case: TO247-3 Mounting: THT Kind of package: tube Reverse recovery time: 130ns Drain-source voltage: 150V Drain current: 240A On-state resistance: 4.4mΩ Features of semiconductor devices: ultra junction x-class Gate charge: 195nC Kind of channel: enhancement |
auf Bestellung 123 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEI2X30-10B | IXYS |
![]() Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1kV Load current: 30A x2 Case: SOT227B Max. forward voltage: 2V Max. forward impulse current: 200A Electrical mounting: screw Mechanical mounting: screw |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA50N20P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO263 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: PolarHT™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTA50N25T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO263 On-state resistance: 60mΩ Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 166ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTH24N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 390W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Technology: X2-Class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IXFA34N65X3 | IXYS |
![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO263 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: HiPerFET™; X3-Class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXFH34N65X3 | IXYS |
![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: HiPerFET™; X3-Class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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OMA160S | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 50mA Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 100Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 125µs Turn-off time: 125µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
OMA160STR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 50mA Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 100Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 125µs Turn-off time: 125µs |
Produkt ist nicht verfügbar |
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DSSS35-008AR | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 80V; 35Ax2; ISOPLUS247™; 190W Mounting: THT Load current: 35A x2 Power dissipation: 190W Max. forward voltage: 0.68V Max. forward impulse current: 0.6kA Max. off-state voltage: 80V Case: ISOPLUS247™ Kind of package: tube Semiconductor structure: double series Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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LOC110S | IXYS |
![]() Description: Optocoupler; SMD; OUT: photodiode; 3.75kV Type of optocoupler: optocoupler Mounting: SMD Insulation voltage: 3.75kV Kind of output: photodiode |
auf Bestellung 478 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC2907B | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS Case: PowerSO8 Mounting: SMT Kind of output: MOSFET Type of relay: solid state Contacts configuration: SPST-NO x2 Operating temperature: -40...85°C Turn-off time: 0.25ms Turn-on time: 2.5ms On-state resistance: 0.15Ω Body dimensions: 21.08x10.16x3.3mm Control current max.: 50mA Max. operating current: 2A Switched voltage: max. 60V AC; max. 60V DC Insulation voltage: 4kV Relay variant: 1-phase; current source Manufacturer series: OptoMOS |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFR44N80P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 26A Power dissipation: 360W Case: ISOPLUS247™ On-state resistance: 0.19Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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DSEI8-06AS-TUB | IXYS |
![]() Description: Diode: rectifying; SMD; 600V; 8A; 35ns; TO263AB; Ufmax: 1.3V; 50W Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Case: TO263AB Max. forward voltage: 1.3V Max. forward impulse current: 100A Kind of package: tube Power dissipation: 50W Features of semiconductor devices: fast switching Technology: FRED Reverse recovery time: 35ns |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDD614SI | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 130ns Turn-on time: 140ns |
auf Bestellung 314 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDD614PI | IXYS |
![]() Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 130ns Turn-on time: 140ns |
auf Bestellung 1052 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN614PI | IXYS |
![]() Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 130ns Turn-on time: 140ns |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTY2N100P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Power dissipation: 86W Case: TO252 Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 800ns Features of semiconductor devices: standard power mosfet |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA2N100P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Power dissipation: 86W Case: TO263 Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 800ns Features of semiconductor devices: standard power mosfet |
auf Bestellung 293 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN52N100X | IXYS |
![]() Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 44A Pulsed drain current: 100A Power dissipation: 830W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.125Ω Gate charge: 245nC Kind of channel: enhancement Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 260ns Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFT16N120P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268 Mounting: SMD Case: TO268 Drain-source voltage: 1.2kV Drain current: 16A On-state resistance: 0.95Ω Type of transistor: N-MOSFET Power dissipation: 660W Polarisation: unipolar Kind of package: tube Gate charge: 0.12µC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CPC3703CTR | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.36A Power dissipation: 1.1W Case: SOT89 On-state resistance: 4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±15V |
auf Bestellung 2002 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTK110N20L2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
OMA160 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 125µs
Turn-off time: 125µs
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 125µs
Turn-off time: 125µs
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.19 EUR |
23+ | 3.12 EUR |
25+ | 2.95 EUR |
CPC1010N |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
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CPC1010NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
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CPC1020NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1025NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Switched voltage: max. 400V AC; max. 400V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 30Ω
Case: SOP4
Mounting: SMT
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Switched voltage: max. 400V AC; max. 400V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 30Ω
Case: SOP4
Mounting: SMT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1019NTR |
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Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Type of relay: solid state
Max. operating current: 750mA
Switched voltage: max. 60V DC
Mounting: SMT
Case: SOP4
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Contacts configuration: SPST-NO
On-state resistance: 0.6Ω
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Type of relay: solid state
Max. operating current: 750mA
Switched voltage: max. 60V DC
Mounting: SMT
Case: SOP4
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Contacts configuration: SPST-NO
On-state resistance: 0.6Ω
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
Produkt ist nicht verfügbar
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Stück im Wert von UAH
CPC1004NTR |
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Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Type of relay: solid state
Max. operating current: 300mA
Switched voltage: max. 100V DC
Mounting: SMT
Case: SOP4
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...110°C
Turn-on time: 3ms
Turn-off time: 1ms
Contacts configuration: SPST-NO
On-state resistance: 4Ω
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Type of relay: solid state
Max. operating current: 300mA
Switched voltage: max. 100V DC
Mounting: SMT
Case: SOP4
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...110°C
Turn-on time: 3ms
Turn-off time: 1ms
Contacts configuration: SPST-NO
On-state resistance: 4Ω
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1009NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 0.5ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 8Ω
Case: SOP4
Mounting: SMT
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 0.5ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 8Ω
Case: SOP4
Mounting: SMT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1030NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1001NTR |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Switched voltage: max. 30V DC
Operating temperature: -40...85°C
CTR@If: 100-800%@0.2mA
Max. operating current: 0.1A
Insulation voltage: 1.5kV
Kind of output: transistor
Number of channels: 1
Turn-off time: 30µs
Turn-on time: 1µs
Control current max.: 5mA
Case: SOP4
Type of optocoupler: optocoupler
Mounting: SMD
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Switched voltage: max. 30V DC
Operating temperature: -40...85°C
CTR@If: 100-800%@0.2mA
Max. operating current: 0.1A
Insulation voltage: 1.5kV
Kind of output: transistor
Number of channels: 1
Turn-off time: 30µs
Turn-on time: 1µs
Control current max.: 5mA
Case: SOP4
Type of optocoupler: optocoupler
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1006NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXFN400N15X3 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 400A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 400A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.5mΩ
Pulsed drain current: 900A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 365nC
Reverse recovery time: 132ns
Kind of channel: enhancement
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 400A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 400A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.5mΩ
Pulsed drain current: 900A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 365nC
Reverse recovery time: 132ns
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 52.51 EUR |
DSEP60-12A |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.81V
Power dissipation: 330W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.81V
Power dissipation: 330W
Reverse recovery time: 40ns
Technology: HiPerFRED™
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.48 EUR |
8+ | 8.94 EUR |
9+ | 8.45 EUR |
30+ | 8.17 EUR |
DSEP60-12AR | ![]() |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: ISOPLUS247™
Max. forward voltage: 2.66V
Power dissipation: 230W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: ISOPLUS247™
Max. forward voltage: 2.66V
Power dissipation: 230W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXDN609CI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 1082 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.63 EUR |
25+ | 2.93 EUR |
26+ | 2.77 EUR |
100+ | 2.66 EUR |
IXDD614CI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 824 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 5 EUR |
17+ | 4.38 EUR |
18+ | 4 EUR |
50+ | 3.98 EUR |
CPC1706Y |
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Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; -40÷85°C
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 4A
Switched voltage: max. 60V DC
Relay variant: current source
Mounting: THT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-off time: 2ms
Turn-on time: 5ms
On-state resistance: 90mΩ
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Kind of output: MOSFET
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; -40÷85°C
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 4A
Switched voltage: max. 60V DC
Relay variant: current source
Mounting: THT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-off time: 2ms
Turn-on time: 5ms
On-state resistance: 90mΩ
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Kind of output: MOSFET
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 5.06 EUR |
23+ | 3.17 EUR |
24+ | 3 EUR |
IXFP12N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Kind of channel: enhancement
Drain current: 12A
Drain-source voltage: 500V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Kind of channel: enhancement
Drain current: 12A
Drain-source voltage: 500V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MIXG330PF1200PTSF |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: IGBT half-bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: IGBT half-bridge; NTC thermistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MIXG330PF1200TSF |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC5602CTR |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Kind of package: reel; tape
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Drain current: 0.13A
Power dissipation: 2.5W
On-state resistance: 14Ω
Gate-source voltage: ±20V
Drain-source voltage: 350V
Case: SOT223
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Kind of package: reel; tape
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Drain current: 0.13A
Power dissipation: 2.5W
On-state resistance: 14Ω
Gate-source voltage: ±20V
Drain-source voltage: 350V
Case: SOT223
Polarisation: unipolar
auf Bestellung 586 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
57+ | 1.27 EUR |
82+ | 0.87 EUR |
139+ | 0.52 EUR |
147+ | 0.49 EUR |
VHFD37-16IO1 |
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Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Gate current: 50/80mA
Features of semiconductor devices: field diodes; freewheelling diode
Leads dimensions: 2x0.5mm
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Gate current: 50/80mA
Features of semiconductor devices: field diodes; freewheelling diode
Leads dimensions: 2x0.5mm
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 40.61 EUR |
10+ | 39.04 EUR |
PLA191S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Manufacturer series: OptoMOS
Case: DIP6
Kind of output: MOSFET
Contacts configuration: SPST-NO
Mounting: SMT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Manufacturer series: OptoMOS
Case: DIP6
Kind of output: MOSFET
Contacts configuration: SPST-NO
Mounting: SMT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.73 EUR |
16+ | 4.58 EUR |
17+ | 4.32 EUR |
MDMA660U1600PTEH |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Case: E3-Pack
Mechanical mounting: screw
Electrical mounting: Press-Fit
Version: module
Load current: 660A
Max. forward impulse current: 5kA
Max. off-state voltage: 1.6kV
Type of bridge rectifier: three-phase
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Case: E3-Pack
Mechanical mounting: screw
Electrical mounting: Press-Fit
Version: module
Load current: 660A
Max. forward impulse current: 5kA
Max. off-state voltage: 1.6kV
Type of bridge rectifier: three-phase
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 195.2 EUR |
DSEI30-10A | ![]() |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 185A
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 138W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 185A
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 138W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.8 EUR |
17+ | 4.22 EUR |
19+ | 3.83 EUR |
IXFH120N20P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Kind of package: tube
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.32 EUR |
7+ | 10.87 EUR |
30+ | 10.45 EUR |
CPC3701CTR |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.6A
On-state resistance: 1Ω
Power dissipation: 1.1W
Gate-source voltage: ±15V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.6A
On-state resistance: 1Ω
Power dissipation: 1.1W
Gate-source voltage: ±15V
Drain-source voltage: 60V
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.19 EUR |
89+ | 0.8 EUR |
140+ | 0.51 EUR |
148+ | 0.48 EUR |
500+ | 0.47 EUR |
IXXH100N60B3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DLA100B1200LB-TUB |
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Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 124A
Max. forward impulse current: 0.4kA
Case: SMPD-B
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.23V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 124A
Max. forward impulse current: 0.4kA
Case: SMPD-B
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.23V
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 21.36 EUR |
20+ | 21.06 EUR |
IXDN609SI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 1580 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.36 EUR |
32+ | 2.25 EUR |
34+ | 2.13 EUR |
100+ | 2.12 EUR |
200+ | 2.04 EUR |
IXDN609SIA |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.12 EUR |
47+ | 1.54 EUR |
50+ | 1.43 EUR |
53+ | 1.36 EUR |
100+ | 1.32 EUR |
IXDN609PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 718 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.12 EUR |
46+ | 1.56 EUR |
50+ | 1.44 EUR |
53+ | 1.36 EUR |
100+ | 1.32 EUR |
IXDN609YI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Case: TO263-5
Mounting: SMD
Kind of package: tube
Output current: -9...9A
Type of integrated circuit: driver
Number of channels: 1
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Case: TO263-5
Mounting: SMD
Kind of package: tube
Output current: -9...9A
Type of integrated circuit: driver
Number of channels: 1
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 814 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.69 EUR |
27+ | 2.73 EUR |
28+ | 2.59 EUR |
100+ | 2.49 EUR |
IXYH30N65C3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate charge: 44nC
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate charge: 44nC
Produkt ist nicht verfügbar
Im Einkaufswagen
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LF2136BTR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Case: SO28
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Case: SO28
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen
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PBA150S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
On-state resistance: 7Ω
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Turn-off time: 2.5ms
Turn-on time: 2.5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
On-state resistance: 7Ω
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Turn-off time: 2.5ms
Turn-on time: 2.5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.72 EUR |
11+ | 6.68 EUR |
IXGH10N170A |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Case: TO247-3
Kind of package: tube
Gate charge: 29nC
Turn-on time: 107ns
Turn-off time: 240ns
Collector current: 5A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Case: TO247-3
Kind of package: tube
Gate charge: 29nC
Turn-on time: 107ns
Turn-off time: 240ns
Collector current: 5A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
IXTH240N15X4 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 940W
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 130ns
Drain-source voltage: 150V
Drain current: 240A
On-state resistance: 4.4mΩ
Features of semiconductor devices: ultra junction x-class
Gate charge: 195nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 940W
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 130ns
Drain-source voltage: 150V
Drain current: 240A
On-state resistance: 4.4mΩ
Features of semiconductor devices: ultra junction x-class
Gate charge: 195nC
Kind of channel: enhancement
auf Bestellung 123 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.59 EUR |
6+ | 12.01 EUR |
30+ | 11.6 EUR |
DSEI2X30-10B |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1kV
Load current: 30A x2
Case: SOT227B
Max. forward voltage: 2V
Max. forward impulse current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1kV
Load current: 30A x2
Case: SOT227B
Max. forward voltage: 2V
Max. forward impulse current: 200A
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 27.07 EUR |
IXTA50N20P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTA50N25T |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTH24N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFA34N65X3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFH34N65X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
OMA160S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 125µs
Turn-off time: 125µs
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 125µs
Turn-off time: 125µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
OMA160STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 125µs
Turn-off time: 125µs
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 125µs
Turn-off time: 125µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DSSS35-008AR |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 35Ax2; ISOPLUS247™; 190W
Mounting: THT
Load current: 35A x2
Power dissipation: 190W
Max. forward voltage: 0.68V
Max. forward impulse current: 0.6kA
Max. off-state voltage: 80V
Case: ISOPLUS247™
Kind of package: tube
Semiconductor structure: double series
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 35Ax2; ISOPLUS247™; 190W
Mounting: THT
Load current: 35A x2
Power dissipation: 190W
Max. forward voltage: 0.68V
Max. forward impulse current: 0.6kA
Max. off-state voltage: 80V
Case: ISOPLUS247™
Kind of package: tube
Semiconductor structure: double series
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LOC110S |
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Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: photodiode; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Insulation voltage: 3.75kV
Kind of output: photodiode
Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: photodiode; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Insulation voltage: 3.75kV
Kind of output: photodiode
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.26 EUR |
35+ | 2.06 EUR |
37+ | 1.94 EUR |
100+ | 1.93 EUR |
CPC2907B |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Case: PowerSO8
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
On-state resistance: 0.15Ω
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Case: PowerSO8
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
On-state resistance: 0.15Ω
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.47 EUR |
8+ | 9.37 EUR |
IXFR44N80P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DSEI8-06AS-TUB |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; TO263AB; Ufmax: 1.3V; 50W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: tube
Power dissipation: 50W
Features of semiconductor devices: fast switching
Technology: FRED
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; TO263AB; Ufmax: 1.3V; 50W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: tube
Power dissipation: 50W
Features of semiconductor devices: fast switching
Technology: FRED
Reverse recovery time: 35ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.92 EUR |
30+ | 2.39 EUR |
IXDD614SI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.92 EUR |
20+ | 3.66 EUR |
21+ | 3.5 EUR |
25+ | 3.43 EUR |
50+ | 3.36 EUR |
IXDD614PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 1052 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
24+ | 3.05 EUR |
33+ | 2.17 EUR |
35+ | 2.04 EUR |
50+ | 2.02 EUR |
100+ | 1.97 EUR |
IXDN614PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.08 EUR |
36+ | 2 EUR |
38+ | 1.89 EUR |
IXTY2N100P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 800ns
Features of semiconductor devices: standard power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 800ns
Features of semiconductor devices: standard power mosfet
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
IXTA2N100P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 800ns
Features of semiconductor devices: standard power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 800ns
Features of semiconductor devices: standard power mosfet
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.32 EUR |
25+ | 2.92 EUR |
28+ | 2.63 EUR |
29+ | 2.49 EUR |
50+ | 2.46 EUR |
IXFN52N100X |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Pulsed drain current: 100A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Type of semiconductor module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Pulsed drain current: 100A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFT16N120P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Mounting: SMD
Case: TO268
Drain-source voltage: 1.2kV
Drain current: 16A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 660W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.12µC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Mounting: SMD
Case: TO268
Drain-source voltage: 1.2kV
Drain current: 16A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 660W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.12µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC3703CTR |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 2002 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.3 EUR |
73+ | 0.99 EUR |
134+ | 0.53 EUR |
142+ | 0.51 EUR |
1000+ | 0.49 EUR |