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IXGH72N60A3 IXGH72N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995F26C6047E6B8BF&compId=IXG_72N60A3.pdf?ci_sign=0ce66d2a8d28592d9e3c10534b015eab49abd70e Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
Technology: GenX3™; XPT™
auf Bestellung 245 Stücke:
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6+13.24 EUR
9+8.18 EUR
10+7.74 EUR
120+7.68 EUR
Mindestbestellmenge: 6
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DSEI30-06A DSEI30-06A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB37693C9782143&compId=DSEI30-06A.pdf?ci_sign=eaeeee9ad87e2d11948ab30fc568b22417abb388 description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 37A; tube; Ifsm: 300A; TO247-2; 125W
Case: TO247-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.4V
Load current: 37A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 0.3kA
Power dissipation: 125W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Mounting: THT
auf Bestellung 138 Stücke:
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15+5.02 EUR
18+4.09 EUR
19+3.86 EUR
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IXFA22N60P3 IXFA22N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD15F39AD0B820&compId=IXFA(H%2CP%2CQ)22N60P3.pdf?ci_sign=977341036c5ff8f78f3d2b3abaff361a11b4088e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 296 Stücke:
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14+5.29 EUR
16+4.76 EUR
17+4.32 EUR
18+4.09 EUR
50+3.93 EUR
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IXFH22N60P IXFH22N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F07820&compId=IXFH22N60P.pdf?ci_sign=4f0fac1497510e424e4db9366eff4aa9b6962356 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 288 Stücke:
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9+8.85 EUR
11+6.66 EUR
30+6.56 EUR
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IXFH22N60P3 IXFH22N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD15F39AD0B820&compId=IXFA(H%2CP%2CQ)22N60P3.pdf?ci_sign=977341036c5ff8f78f3d2b3abaff361a11b4088e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 593 Stücke:
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10+7.66 EUR
14+5.12 EUR
15+4.83 EUR
120+4.65 EUR
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IXFP22N60P3 IXFP22N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD15F39AD0B820&compId=IXFA(H%2CP%2CQ)22N60P3.pdf?ci_sign=977341036c5ff8f78f3d2b3abaff361a11b4088e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 147 Stücke:
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13+5.58 EUR
20+3.7 EUR
21+3.5 EUR
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DSA120X200LB-TUB DSA120X200LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C8E21202C2B8BF&compId=DSA120X200LB.pdf?ci_sign=cade504b715789123a9bc4b1a6fe7bb93fd83604 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; tube; 185W
Case: SMPD
Max. off-state voltage: 200V
Max. forward voltage: 0.67V
Load current: 65A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
Power dissipation: 185W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: SMD
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IXKH35N60C5 IXKH35N60C5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC723820&compId=IXKH35N60C5.pdf?ci_sign=677b8d3db43cba52c4ebd7ef4e22bc33c3c7302c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; 357W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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IXKN75N60C IXKN75N60C IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B5CF884CAC483E28&compId=IXKN75N60C-DTE.pdf?ci_sign=0fa51332a57718507258414fc17eaf7b8be70c9b Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 560W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Gate charge: 500nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 580ns
auf Bestellung 9 Stücke:
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1+77.05 EUR
3+74.83 EUR
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IXXH75N60C3 IXXH75N60C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB419567FC1820&compId=IXXH75N60C3.pdf?ci_sign=9e7c3e8f477c39f364e70435e4f49d0340f77efb Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-off time: 165ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 105ns
Produkt ist nicht verfügbar
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IXXH75N60C3D1 IXXH75N60C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB43B72332F820&compId=IXXH75N60C3D1.pdf?ci_sign=7226b060f7541cfae9705b803247e882175885cd Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-off time: 185ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 105ns
Produkt ist nicht verfügbar
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CPC1301GR CPC1301GR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AA40ABF36E1EC&compId=CPC1301GR.pdf?ci_sign=ed675bf8da0b0821cc0c340c5fd3ba4d77d3e4e0 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; SO4
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-8000%@1mA
Type of optocoupler: optocoupler
Mounting: SMD
Case: SO4
auf Bestellung 358 Stücke:
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28+2.59 EUR
45+1.6 EUR
51+1.42 EUR
54+1.33 EUR
56+1.29 EUR
Mindestbestellmenge: 28
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IXFN120N65X2 IXFN120N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9EAC65F2DB820&compId=IXFN120N65X2.pdf?ci_sign=073e54168aecec180c88c9f2f85635c9946f2fa1 Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 108A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 24mΩ
Pulsed drain current: 240A
Power dissipation: 890W
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 240nC
Reverse recovery time: 220ns
Kind of channel: enhancement
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IXFN26N120P IXFN26N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA83340B11AD820&compId=IXFN26N120P.pdf?ci_sign=5573ca8e5e9174590dcdfe9d77701095038e467c Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.5Ω
Pulsed drain current: 60A
Power dissipation: 695W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 255nC
Reverse recovery time: 300ns
Kind of channel: enhancement
auf Bestellung 7 Stücke:
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2+39.27 EUR
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CPC1114N CPC1114N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75FE0C7&compId=CPC1114N.pdf?ci_sign=36ecf46fb10f7b97fccf3227e429fc88dfec2307 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
auf Bestellung 499 Stücke:
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31+2.33 EUR
37+1.96 EUR
49+1.47 EUR
52+1.4 EUR
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IXTK210P10T IXTK210P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794B99F61BE8748&compId=IXTK210P10T.pdf?ci_sign=770cd11c3591d5f99ee9f471b3427981351a0ec8 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: TO264
Mounting: THT
Kind of package: tube
Technology: TrenchP™
Polarisation: unipolar
Drain current: -210A
Drain-source voltage: -100V
Reverse recovery time: 200ns
Gate charge: 740nC
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IXTA76N25T IXTA76N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4165ECB579820&compId=IXTA(H%2CI%2CP%2CQ)76N25T.pdf?ci_sign=5561f98ce5cfa59f8e5ad5e0fac5ca227be0863e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 148ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA76P10T IXTA76P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0666B5AC438BF&compId=IXT_76P10T_HV.pdf?ci_sign=885b69a53fc37e69ce9f6124910ae9a6856f96fd Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
auf Bestellung 137 Stücke:
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9+8.75 EUR
10+7.86 EUR
14+5.15 EUR
15+4.88 EUR
50+4.82 EUR
100+4.69 EUR
Mindestbestellmenge: 9
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DSIK45-16AR DSIK45-16AR IXYS media?resourcetype=datasheets&itemid=d16330bf-b369-4dea-afcc-53e43f988a0d&filename=Littelfuse-Power-Semiconductors-DSIK45-16AR-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45Ax2; tube; Ifsm: 480A; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.26V
Load current: 45A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.48kA
Power dissipation: 165W
Type of diode: rectifying
auf Bestellung 17 Stücke:
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9+8.59 EUR
11+6.76 EUR
12+6.39 EUR
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IXFN110N85X IXFN110N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA717BF78FC3820&compId=IXFN110N85X.pdf?ci_sign=85a84830f40ac335953053a978c96cf3d1863395 Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 220A
Power dissipation: 1170W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 425nC
Reverse recovery time: 205ns
Kind of channel: enhancement
auf Bestellung 9 Stücke:
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1+92.21 EUR
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IXFN150N65X2 IXFN150N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C8B86E1D378BF&compId=IXFN150N65X2.pdf?ci_sign=b8e5f0c766f20f8a34422d633165129f8ae5bd95 Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 145A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 17mΩ
Pulsed drain current: 300A
Power dissipation: 1.04kW
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 355nC
Reverse recovery time: 190ns
Kind of channel: enhancement
auf Bestellung 20 Stücke:
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2+62.93 EUR
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IXFN180N15P IXFN180N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C5F4741DBF8BF&compId=IXFN180N15P.pdf?ci_sign=30b7d36958ffd7d19dec797319415ee275dcdc97 description Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 150A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 11mΩ
Pulsed drain current: 380A
Power dissipation: 680W
Technology: HiPerFET™; PolarHT™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 240nC
Reverse recovery time: 200ns
Kind of channel: enhancement
auf Bestellung 2 Stücke:
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2+35.75 EUR
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IXFB150N65X2 IXFB150N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED463CFF1A3CA18&compId=IXFB150N65X2.pdf?ci_sign=f5f384917a55461544df260142eaf27680b54781 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Power dissipation: 1.56kW
Case: PLUS264™
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 260ns
Drain-source voltage: 650V
Drain current: 150A
On-state resistance: 17mΩ
auf Bestellung 18 Stücke:
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3+32.82 EUR
10+32.25 EUR
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VUO68-16NO7 VUO68-16NO7 IXYS pVersion=0046&contRep=ZT&docId=E2920A1362DBFCF19A99005056AB752F&compId=VUO68-16NO7.pdf?ci_sign=fbd0ecee230da44ce53781abb73e734948a92ccc Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 68A; Ifsm: 300A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 68A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.5V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
auf Bestellung 85 Stücke:
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4+18.2 EUR
5+17.2 EUR
25+16.72 EUR
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IX4340N IX4340N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D86254426D5D8BF&compId=IX4340.pdf?ci_sign=560a08df3f47fc5e55b105888745757deeb6a350 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
auf Bestellung 979 Stücke:
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44+1.63 EUR
71+1.01 EUR
96+0.75 EUR
102+0.71 EUR
300+0.68 EUR
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IX4340NE IX4340NE IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D86254426D5D8BF&compId=IX4340.pdf?ci_sign=560a08df3f47fc5e55b105888745757deeb6a350 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
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75+0.96 EUR
97+0.74 EUR
102+0.7 EUR
106+0.68 EUR
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IX4340NETR IXYS IX4340NE?assetguid=B6D399FA-9C99-4C15-B6C0-B87CEC93F28F Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
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IX4340NTR IX4340NTR IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
Produkt ist nicht verfügbar
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CLA100E1200HB CLA100E1200HB IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3BB0E148940D2&compId=CLA100E1200HB.pdf?ci_sign=f1fa490dbba8e21a47a9c02628c727e624f7169e Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 100A
Case: TO247AD
Mounting: THT
Max. load current: 160A
Max. forward impulse current: 1.19kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
auf Bestellung 243 Stücke:
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11+6.85 EUR
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30+6.23 EUR
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IXFP20N85X IXFP20N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD263488393820&compId=IXFH(P)20N85X.pdf?ci_sign=7c12a971503592693c6f40300c433ab581bc443f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 63nC
Reverse recovery time: 190ns
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IXKP20N60C5M IXKP20N60C5M IXYS IXKP20N60C5M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; TO220FP; 340ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Reverse recovery time: 340ns
Produkt ist nicht verfügbar
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IXTP20N65X2M IXTP20N65X2M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A284880A45BD9820&compId=IXTP20N65X2M.pdf?ci_sign=03a7e0c24a99191546b97318a998a1d46111d3a9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 36W; TO220FP; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
Reverse recovery time: 0.35µs
Produkt ist nicht verfügbar
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IXYP20N65B3D1 IXYP20N65B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE8D967E8091820&compId=IXYP20N65B3D1.pdf?ci_sign=9728344ea7308948dfe3c1a333d2cbb4c2d76f0b Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 20A
Pulsed collector current: 108A
Turn-on time: 39ns
Turn-off time: 271ns
Produkt ist nicht verfügbar
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IXKH20N60C5 IXKH20N60C5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC6F7820&compId=IXK(H)20N60C5.pdf?ci_sign=c65d3b92b0e7d2e519176033758644dd7791b0c2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Gate charge: 32nC
auf Bestellung 119 Stücke:
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9+8.58 EUR
12+6.15 EUR
13+5.82 EUR
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IXTA60N20T IXTA60N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4862938A7D820&compId=IXTA(P%2CQ)60N20T.pdf?ci_sign=66a1292f8361c5aa10783640b65094bdcfe97631 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO263; 118ns
Mounting: SMD
Kind of channel: enhancement
Case: TO263
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Power dissipation: 500W
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IXTP60N20T IXTP60N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4862938A7D820&compId=IXTA(P%2CQ)60N20T.pdf?ci_sign=66a1292f8361c5aa10783640b65094bdcfe97631 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Reverse recovery time: 118ns
auf Bestellung 234 Stücke:
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11+6.88 EUR
15+4.93 EUR
16+4.66 EUR
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IXTQ60N20T IXTQ60N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4862938A7D820&compId=IXTA(P%2CQ)60N20T.pdf?ci_sign=66a1292f8361c5aa10783640b65094bdcfe97631 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
Mounting: THT
Kind of channel: enhancement
Case: TO3P
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Power dissipation: 500W
auf Bestellung 233 Stücke:
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11+6.89 EUR
19+3.79 EUR
20+3.58 EUR
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IXYN120N120C3 IXYN120N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F33CFF369FB820&compId=IXYN120N120C3.pdf?ci_sign=0cb637b49ca6754540e316b6ac2e3f1cf1f671e8 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 1.2kW
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 700A
Produkt ist nicht verfügbar
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IXFT50N60P3 IXFT50N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285B3A6FAECB820&compId=IXFH(T%2CQ)50N60P3.pdf?ci_sign=7215fc777fa1c68d55c2b5e1b4f1af550f824e8d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 292 Stücke:
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6+12.97 EUR
7+10.64 EUR
8+10.05 EUR
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IXFT50N60X IXFT50N60X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4BFA14AED1820&compId=IXFH(Q%2CT)50N60X.pdf?ci_sign=4f276076f8a13b14449da0ce3f84380c73548c0a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 195ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 14 Stücke:
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5+16.43 EUR
7+11.13 EUR
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IXXA50N60B3 IXXA50N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAA1242988B820&compId=IXXA(p%2Ch)50N60B3.pdf?ci_sign=71c5d36b52ddfe9e79064463744b29a6387fe3fa Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: TO263
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-off time: 320ns
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 75ns
Produkt ist nicht verfügbar
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IXXH50N60B3 IXXH50N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAA1242988B820&compId=IXXA(p%2Ch)50N60B3.pdf?ci_sign=71c5d36b52ddfe9e79064463744b29a6387fe3fa Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-off time: 320ns
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 75ns
Produkt ist nicht verfügbar
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IXXH50N60B3D1 IXXH50N60B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAA58E72F17820&compId=IXXH50N60B3D1.pdf?ci_sign=75c42883b408f9ed323b77849ddeadfafc218900 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-off time: 320ns
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 75ns
Produkt ist nicht verfügbar
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IXXH50N60C3 IXXH50N60C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAAB8AF23B1820&compId=IXXH50N60C3.pdf?ci_sign=8902e9a7c437918061e7761a3e038743cd4f6602 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-off time: 170ns
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 69ns
Produkt ist nicht verfügbar
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IXXH50N60C3D1 IXXH50N60C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAB1987338D820&compId=IXXH50N60C3D1.pdf?ci_sign=a291cc31d53c6e5ac3ce58cb38dfe0d72c580304 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-off time: 170ns
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 69ns
Produkt ist nicht verfügbar
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IXXP50N60B3 IXXP50N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAA1242988B820&compId=IXXA(p%2Ch)50N60B3.pdf?ci_sign=71c5d36b52ddfe9e79064463744b29a6387fe3fa Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-off time: 320ns
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 75ns
Produkt ist nicht verfügbar
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IXXH150N60C3 IXXH150N60C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB84B2D4667820&compId=IXXH150N60C3.pdf?ci_sign=e2edc0f05d79079a7a3e1b1ee77b81648e551054 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-off time: 230ns
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 700A
Turn-on time: 0.1µs
auf Bestellung 3 Stücke:
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3+23.84 EUR
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IXYN150N60B3 IXYN150N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB8C89CC895820&compId=IXYN150N60B3.pdf?ci_sign=2b81f77306a9a614cab35e665551c8d81a0f0fd4 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 830W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 750A
Produkt ist nicht verfügbar
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IXYA20N65C3 IXYA20N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1601610FD9820&compId=IXYA(H)20N65C3.pdf?ci_sign=622839bec752ab1a386c7b6ee51037b152aed90c Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 30nC
Turn-on time: 51ns
Turn-off time: 132ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Produkt ist nicht verfügbar
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IXYA20N65C3D1 IXYA20N65C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA190856D398BF&compId=IXY_20N65C3D1.pdf?ci_sign=fe6215c9611b11121eb070e7e1585269872ac75f Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 30nC
Turn-on time: 51ns
Turn-off time: 132ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.06 EUR
20+3.65 EUR
23+3.19 EUR
24+3.02 EUR
50+2.9 EUR
Mindestbestellmenge: 18
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IXYH20N65C3 IXYH20N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1601610FD9820&compId=IXYA(H)20N65C3.pdf?ci_sign=622839bec752ab1a386c7b6ee51037b152aed90c Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 30nC
Turn-on time: 51ns
Turn-off time: 132ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Produkt ist nicht verfügbar
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IXYP20N65C3D1 IXYP20N65C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA190856D398BF&compId=IXY_20N65C3D1.pdf?ci_sign=fe6215c9611b11121eb070e7e1585269872ac75f Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 30nC
Turn-on time: 51ns
Turn-off time: 132ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.36 EUR
27+2.7 EUR
28+2.56 EUR
Mindestbestellmenge: 14
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IXYP20N65C3D1M IXYP20N65C3D1M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE410F543879820&compId=IXYP20N65C3D1M.pdf?ci_sign=1947662e3b6d9a26d26a809238c9086d39d68c63 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 50W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 30nC
Turn-on time: 51ns
Turn-off time: 132ns
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Produkt ist nicht verfügbar
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IXFK120N65X2 IXFK120N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB63306F97D8BF&compId=IXFK120N65X2_IXFX120N65X2.pdf?ci_sign=0c1bd7c19c3aa665ef6e1d8149c6a814e49a737a Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 220ns
Gate charge: 240nC
Produkt ist nicht verfügbar
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IXFX120N65X2 IXFX120N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB63306F97D8BF&compId=IXFK120N65X2_IXFX120N65X2.pdf?ci_sign=0c1bd7c19c3aa665ef6e1d8149c6a814e49a737a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 220ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 220ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 240nC
Produkt ist nicht verfügbar
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IXTK120N65X2 IXTK120N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB29CD38EED8BF&compId=IXT_120N65X2.pdf?ci_sign=ba45e36110c138614c3f7686f328897e9b74d68c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 505ns
Gate charge: 230nC
Produkt ist nicht verfügbar
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IXTX120N65X2 IXTX120N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB29CD38EED8BF&compId=IXT_120N65X2.pdf?ci_sign=ba45e36110c138614c3f7686f328897e9b74d68c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 505ns
Mounting: THT
Case: PLUS247™
Reverse recovery time: 505ns
Drain-source voltage: 650V
Drain current: 120A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 230nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IX4426N IX4426N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting
Kind of package: tube
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
auf Bestellung 1549 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.39 EUR
73+0.99 EUR
95+0.76 EUR
100+0.72 EUR
Mindestbestellmenge: 52
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IXTK120N25P IXTK120N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF910BFD6664FE27&compId=IXTK120N25P-DTE.pdf?ci_sign=9477a8a3509209b374b486a84ef243ec93f2a551 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: Polar™
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
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DSEP30-06BR DSEP30-06BR IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEEE50238512143&compId=DSEP30-06BR.pdf?ci_sign=8fe33b0a2e535ec1dd571a8e494d41ae71ddc313 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; ISOPLUS247™
Case: ISOPLUS247™
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.61V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 250A
Power dissipation: 135W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.55 EUR
11+6.55 EUR
12+6.19 EUR
Mindestbestellmenge: 9
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IXGH72N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995F26C6047E6B8BF&compId=IXG_72N60A3.pdf?ci_sign=0ce66d2a8d28592d9e3c10534b015eab49abd70e
IXGH72N60A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
Technology: GenX3™; XPT™
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.24 EUR
9+8.18 EUR
10+7.74 EUR
120+7.68 EUR
Mindestbestellmenge: 6
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DSEI30-06A description pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB37693C9782143&compId=DSEI30-06A.pdf?ci_sign=eaeeee9ad87e2d11948ab30fc568b22417abb388
DSEI30-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 37A; tube; Ifsm: 300A; TO247-2; 125W
Case: TO247-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.4V
Load current: 37A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 0.3kA
Power dissipation: 125W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Mounting: THT
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.02 EUR
18+4.09 EUR
19+3.86 EUR
Mindestbestellmenge: 15
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IXFA22N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD15F39AD0B820&compId=IXFA(H%2CP%2CQ)22N60P3.pdf?ci_sign=977341036c5ff8f78f3d2b3abaff361a11b4088e
IXFA22N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.29 EUR
16+4.76 EUR
17+4.32 EUR
18+4.09 EUR
50+3.93 EUR
Mindestbestellmenge: 14
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IXFH22N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F07820&compId=IXFH22N60P.pdf?ci_sign=4f0fac1497510e424e4db9366eff4aa9b6962356
IXFH22N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 288 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.85 EUR
11+6.66 EUR
30+6.56 EUR
Mindestbestellmenge: 9
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IXFH22N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD15F39AD0B820&compId=IXFA(H%2CP%2CQ)22N60P3.pdf?ci_sign=977341036c5ff8f78f3d2b3abaff361a11b4088e
IXFH22N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 593 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.66 EUR
14+5.12 EUR
15+4.83 EUR
120+4.65 EUR
Mindestbestellmenge: 10
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IXFP22N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD15F39AD0B820&compId=IXFA(H%2CP%2CQ)22N60P3.pdf?ci_sign=977341036c5ff8f78f3d2b3abaff361a11b4088e
IXFP22N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.58 EUR
20+3.7 EUR
21+3.5 EUR
Mindestbestellmenge: 13
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DSA120X200LB-TUB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C8E21202C2B8BF&compId=DSA120X200LB.pdf?ci_sign=cade504b715789123a9bc4b1a6fe7bb93fd83604
DSA120X200LB-TUB
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; tube; 185W
Case: SMPD
Max. off-state voltage: 200V
Max. forward voltage: 0.67V
Load current: 65A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
Power dissipation: 185W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: SMD
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXKH35N60C5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC723820&compId=IXKH35N60C5.pdf?ci_sign=677b8d3db43cba52c4ebd7ef4e22bc33c3c7302c
IXKH35N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; 357W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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IXKN75N60C pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B5CF884CAC483E28&compId=IXKN75N60C-DTE.pdf?ci_sign=0fa51332a57718507258414fc17eaf7b8be70c9b
IXKN75N60C
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 560W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Gate charge: 500nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 580ns
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+77.05 EUR
3+74.83 EUR
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IXXH75N60C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB419567FC1820&compId=IXXH75N60C3.pdf?ci_sign=9e7c3e8f477c39f364e70435e4f49d0340f77efb
IXXH75N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-off time: 165ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 105ns
Produkt ist nicht verfügbar
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IXXH75N60C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB43B72332F820&compId=IXXH75N60C3D1.pdf?ci_sign=7226b060f7541cfae9705b803247e882175885cd
IXXH75N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-off time: 185ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 105ns
Produkt ist nicht verfügbar
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CPC1301GR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AA40ABF36E1EC&compId=CPC1301GR.pdf?ci_sign=ed675bf8da0b0821cc0c340c5fd3ba4d77d3e4e0
CPC1301GR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; SO4
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-8000%@1mA
Type of optocoupler: optocoupler
Mounting: SMD
Case: SO4
auf Bestellung 358 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.59 EUR
45+1.6 EUR
51+1.42 EUR
54+1.33 EUR
56+1.29 EUR
Mindestbestellmenge: 28
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IXFN120N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9EAC65F2DB820&compId=IXFN120N65X2.pdf?ci_sign=073e54168aecec180c88c9f2f85635c9946f2fa1
IXFN120N65X2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 108A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 24mΩ
Pulsed drain current: 240A
Power dissipation: 890W
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 240nC
Reverse recovery time: 220ns
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXFN26N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA83340B11AD820&compId=IXFN26N120P.pdf?ci_sign=5573ca8e5e9174590dcdfe9d77701095038e467c
IXFN26N120P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.5Ω
Pulsed drain current: 60A
Power dissipation: 695W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 255nC
Reverse recovery time: 300ns
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+39.27 EUR
Mindestbestellmenge: 2
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CPC1114N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75FE0C7&compId=CPC1114N.pdf?ci_sign=36ecf46fb10f7b97fccf3227e429fc88dfec2307
CPC1114N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
auf Bestellung 499 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
37+1.96 EUR
49+1.47 EUR
52+1.4 EUR
Mindestbestellmenge: 31
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IXTK210P10T pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794B99F61BE8748&compId=IXTK210P10T.pdf?ci_sign=770cd11c3591d5f99ee9f471b3427981351a0ec8
IXTK210P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: TO264
Mounting: THT
Kind of package: tube
Technology: TrenchP™
Polarisation: unipolar
Drain current: -210A
Drain-source voltage: -100V
Reverse recovery time: 200ns
Gate charge: 740nC
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXTA76N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4165ECB579820&compId=IXTA(H%2CI%2CP%2CQ)76N25T.pdf?ci_sign=5561f98ce5cfa59f8e5ad5e0fac5ca227be0863e
IXTA76N25T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 148ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTA76P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0666B5AC438BF&compId=IXT_76P10T_HV.pdf?ci_sign=885b69a53fc37e69ce9f6124910ae9a6856f96fd
IXTA76P10T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.75 EUR
10+7.86 EUR
14+5.15 EUR
15+4.88 EUR
50+4.82 EUR
100+4.69 EUR
Mindestbestellmenge: 9
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DSIK45-16AR media?resourcetype=datasheets&itemid=d16330bf-b369-4dea-afcc-53e43f988a0d&filename=Littelfuse-Power-Semiconductors-DSIK45-16AR-Datasheet
DSIK45-16AR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45Ax2; tube; Ifsm: 480A; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.26V
Load current: 45A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.48kA
Power dissipation: 165W
Type of diode: rectifying
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.59 EUR
11+6.76 EUR
12+6.39 EUR
Mindestbestellmenge: 9
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IXFN110N85X pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA717BF78FC3820&compId=IXFN110N85X.pdf?ci_sign=85a84830f40ac335953053a978c96cf3d1863395
IXFN110N85X
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 220A
Power dissipation: 1170W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 425nC
Reverse recovery time: 205ns
Kind of channel: enhancement
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+92.21 EUR
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IXFN150N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C8B86E1D378BF&compId=IXFN150N65X2.pdf?ci_sign=b8e5f0c766f20f8a34422d633165129f8ae5bd95
IXFN150N65X2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 145A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 17mΩ
Pulsed drain current: 300A
Power dissipation: 1.04kW
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 355nC
Reverse recovery time: 190ns
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+62.93 EUR
Mindestbestellmenge: 2
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IXFN180N15P description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C5F4741DBF8BF&compId=IXFN180N15P.pdf?ci_sign=30b7d36958ffd7d19dec797319415ee275dcdc97
IXFN180N15P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 150A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 11mΩ
Pulsed drain current: 380A
Power dissipation: 680W
Technology: HiPerFET™; PolarHT™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 240nC
Reverse recovery time: 200ns
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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IXFB150N65X2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED463CFF1A3CA18&compId=IXFB150N65X2.pdf?ci_sign=f5f384917a55461544df260142eaf27680b54781
IXFB150N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Power dissipation: 1.56kW
Case: PLUS264™
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 260ns
Drain-source voltage: 650V
Drain current: 150A
On-state resistance: 17mΩ
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.82 EUR
10+32.25 EUR
Mindestbestellmenge: 3
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VUO68-16NO7 pVersion=0046&contRep=ZT&docId=E2920A1362DBFCF19A99005056AB752F&compId=VUO68-16NO7.pdf?ci_sign=fbd0ecee230da44ce53781abb73e734948a92ccc
VUO68-16NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 68A; Ifsm: 300A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 68A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.5V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.2 EUR
5+17.2 EUR
25+16.72 EUR
Mindestbestellmenge: 4
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IX4340N pVersion=0046&contRep=ZT&docId=005056AB82531EE98D86254426D5D8BF&compId=IX4340.pdf?ci_sign=560a08df3f47fc5e55b105888745757deeb6a350
IX4340N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
auf Bestellung 979 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
71+1.01 EUR
96+0.75 EUR
102+0.71 EUR
300+0.68 EUR
Mindestbestellmenge: 44
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IX4340NE pVersion=0046&contRep=ZT&docId=005056AB82531EE98D86254426D5D8BF&compId=IX4340.pdf?ci_sign=560a08df3f47fc5e55b105888745757deeb6a350
IX4340NE
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
75+0.96 EUR
97+0.74 EUR
102+0.7 EUR
106+0.68 EUR
Mindestbestellmenge: 52
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IX4340NETR IX4340NE?assetguid=B6D399FA-9C99-4C15-B6C0-B87CEC93F28F
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
Produkt ist nicht verfügbar
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IX4340NTR
IX4340NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
Produkt ist nicht verfügbar
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CLA100E1200HB pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3BB0E148940D2&compId=CLA100E1200HB.pdf?ci_sign=f1fa490dbba8e21a47a9c02628c727e624f7169e
CLA100E1200HB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 100A
Case: TO247AD
Mounting: THT
Max. load current: 160A
Max. forward impulse current: 1.19kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.41 EUR
11+6.85 EUR
12+6.48 EUR
30+6.23 EUR
Mindestbestellmenge: 9
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IXFP20N85X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD263488393820&compId=IXFH(P)20N85X.pdf?ci_sign=7c12a971503592693c6f40300c433ab581bc443f
IXFP20N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 63nC
Reverse recovery time: 190ns
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.12 EUR
Mindestbestellmenge: 23
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IXKP20N60C5M IXKP20N60C5M.pdf
IXKP20N60C5M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; TO220FP; 340ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Reverse recovery time: 340ns
Produkt ist nicht verfügbar
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IXTP20N65X2M pVersion=0046&contRep=ZT&docId=005056AB82531ED9A284880A45BD9820&compId=IXTP20N65X2M.pdf?ci_sign=03a7e0c24a99191546b97318a998a1d46111d3a9
IXTP20N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 36W; TO220FP; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
Reverse recovery time: 0.35µs
Produkt ist nicht verfügbar
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IXYP20N65B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE8D967E8091820&compId=IXYP20N65B3D1.pdf?ci_sign=9728344ea7308948dfe3c1a333d2cbb4c2d76f0b
IXYP20N65B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 20A
Pulsed collector current: 108A
Turn-on time: 39ns
Turn-off time: 271ns
Produkt ist nicht verfügbar
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IXKH20N60C5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC6F7820&compId=IXK(H)20N60C5.pdf?ci_sign=c65d3b92b0e7d2e519176033758644dd7791b0c2
IXKH20N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Gate charge: 32nC
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.58 EUR
12+6.15 EUR
13+5.82 EUR
Mindestbestellmenge: 9
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IXTA60N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4862938A7D820&compId=IXTA(P%2CQ)60N20T.pdf?ci_sign=66a1292f8361c5aa10783640b65094bdcfe97631
IXTA60N20T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO263; 118ns
Mounting: SMD
Kind of channel: enhancement
Case: TO263
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Power dissipation: 500W
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
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IXTP60N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4862938A7D820&compId=IXTA(P%2CQ)60N20T.pdf?ci_sign=66a1292f8361c5aa10783640b65094bdcfe97631
IXTP60N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Reverse recovery time: 118ns
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.88 EUR
15+4.93 EUR
16+4.66 EUR
Mindestbestellmenge: 11
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IXTQ60N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4862938A7D820&compId=IXTA(P%2CQ)60N20T.pdf?ci_sign=66a1292f8361c5aa10783640b65094bdcfe97631
IXTQ60N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
Mounting: THT
Kind of channel: enhancement
Case: TO3P
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Power dissipation: 500W
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.89 EUR
19+3.79 EUR
20+3.58 EUR
Mindestbestellmenge: 11
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IXYN120N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F33CFF369FB820&compId=IXYN120N120C3.pdf?ci_sign=0cb637b49ca6754540e316b6ac2e3f1cf1f671e8
IXYN120N120C3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 1.2kW
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 700A
Produkt ist nicht verfügbar
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IXFT50N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285B3A6FAECB820&compId=IXFH(T%2CQ)50N60P3.pdf?ci_sign=7215fc777fa1c68d55c2b5e1b4f1af550f824e8d
IXFT50N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.97 EUR
7+10.64 EUR
8+10.05 EUR
Mindestbestellmenge: 6
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IXFT50N60X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4BFA14AED1820&compId=IXFH(Q%2CT)50N60X.pdf?ci_sign=4f276076f8a13b14449da0ce3f84380c73548c0a
IXFT50N60X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 195ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.43 EUR
7+11.13 EUR
Mindestbestellmenge: 5
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IXXA50N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAA1242988B820&compId=IXXA(p%2Ch)50N60B3.pdf?ci_sign=71c5d36b52ddfe9e79064463744b29a6387fe3fa
IXXA50N60B3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: TO263
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-off time: 320ns
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 75ns
Produkt ist nicht verfügbar
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IXXH50N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAA1242988B820&compId=IXXA(p%2Ch)50N60B3.pdf?ci_sign=71c5d36b52ddfe9e79064463744b29a6387fe3fa
IXXH50N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-off time: 320ns
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 75ns
Produkt ist nicht verfügbar
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IXXH50N60B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAA58E72F17820&compId=IXXH50N60B3D1.pdf?ci_sign=75c42883b408f9ed323b77849ddeadfafc218900
IXXH50N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-off time: 320ns
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 75ns
Produkt ist nicht verfügbar
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IXXH50N60C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAAB8AF23B1820&compId=IXXH50N60C3.pdf?ci_sign=8902e9a7c437918061e7761a3e038743cd4f6602
IXXH50N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-off time: 170ns
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 69ns
Produkt ist nicht verfügbar
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IXXH50N60C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAB1987338D820&compId=IXXH50N60C3D1.pdf?ci_sign=a291cc31d53c6e5ac3ce58cb38dfe0d72c580304
IXXH50N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-off time: 170ns
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 69ns
Produkt ist nicht verfügbar
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IXXP50N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAA1242988B820&compId=IXXA(p%2Ch)50N60B3.pdf?ci_sign=71c5d36b52ddfe9e79064463744b29a6387fe3fa
IXXP50N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-off time: 320ns
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 75ns
Produkt ist nicht verfügbar
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IXXH150N60C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB84B2D4667820&compId=IXXH150N60C3.pdf?ci_sign=e2edc0f05d79079a7a3e1b1ee77b81648e551054
IXXH150N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-off time: 230ns
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 700A
Turn-on time: 0.1µs
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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IXYN150N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB8C89CC895820&compId=IXYN150N60B3.pdf?ci_sign=2b81f77306a9a614cab35e665551c8d81a0f0fd4
IXYN150N60B3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 830W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 750A
Produkt ist nicht verfügbar
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IXYA20N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1601610FD9820&compId=IXYA(H)20N65C3.pdf?ci_sign=622839bec752ab1a386c7b6ee51037b152aed90c
IXYA20N65C3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 30nC
Turn-on time: 51ns
Turn-off time: 132ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Produkt ist nicht verfügbar
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IXYA20N65C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA190856D398BF&compId=IXY_20N65C3D1.pdf?ci_sign=fe6215c9611b11121eb070e7e1585269872ac75f
IXYA20N65C3D1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 30nC
Turn-on time: 51ns
Turn-off time: 132ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.06 EUR
20+3.65 EUR
23+3.19 EUR
24+3.02 EUR
50+2.9 EUR
Mindestbestellmenge: 18
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IXYH20N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1601610FD9820&compId=IXYA(H)20N65C3.pdf?ci_sign=622839bec752ab1a386c7b6ee51037b152aed90c
IXYH20N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 30nC
Turn-on time: 51ns
Turn-off time: 132ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Produkt ist nicht verfügbar
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IXYP20N65C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA190856D398BF&compId=IXY_20N65C3D1.pdf?ci_sign=fe6215c9611b11121eb070e7e1585269872ac75f
IXYP20N65C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 30nC
Turn-on time: 51ns
Turn-off time: 132ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.36 EUR
27+2.7 EUR
28+2.56 EUR
Mindestbestellmenge: 14
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IXYP20N65C3D1M pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE410F543879820&compId=IXYP20N65C3D1M.pdf?ci_sign=1947662e3b6d9a26d26a809238c9086d39d68c63
IXYP20N65C3D1M
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 50W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 30nC
Turn-on time: 51ns
Turn-off time: 132ns
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Produkt ist nicht verfügbar
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IXFK120N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB63306F97D8BF&compId=IXFK120N65X2_IXFX120N65X2.pdf?ci_sign=0c1bd7c19c3aa665ef6e1d8149c6a814e49a737a
IXFK120N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 220ns
Gate charge: 240nC
Produkt ist nicht verfügbar
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IXFX120N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB63306F97D8BF&compId=IXFK120N65X2_IXFX120N65X2.pdf?ci_sign=0c1bd7c19c3aa665ef6e1d8149c6a814e49a737a
IXFX120N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 220ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 220ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 240nC
Produkt ist nicht verfügbar
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IXTK120N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB29CD38EED8BF&compId=IXT_120N65X2.pdf?ci_sign=ba45e36110c138614c3f7686f328897e9b74d68c
IXTK120N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 505ns
Gate charge: 230nC
Produkt ist nicht verfügbar
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IXTX120N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB29CD38EED8BF&compId=IXT_120N65X2.pdf?ci_sign=ba45e36110c138614c3f7686f328897e9b74d68c
IXTX120N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 505ns
Mounting: THT
Case: PLUS247™
Reverse recovery time: 505ns
Drain-source voltage: 650V
Drain current: 120A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 230nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IX4426N pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c
IX4426N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting
Kind of package: tube
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
auf Bestellung 1549 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
73+0.99 EUR
95+0.76 EUR
100+0.72 EUR
Mindestbestellmenge: 52
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IXTK120N25P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF910BFD6664FE27&compId=IXTK120N25P-DTE.pdf?ci_sign=9477a8a3509209b374b486a84ef243ec93f2a551
IXTK120N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: Polar™
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
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DSEP30-06BR pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEEE50238512143&compId=DSEP30-06BR.pdf?ci_sign=8fe33b0a2e535ec1dd571a8e494d41ae71ddc313
DSEP30-06BR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; ISOPLUS247™
Case: ISOPLUS247™
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.61V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 250A
Power dissipation: 135W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.55 EUR
11+6.55 EUR
12+6.19 EUR
Mindestbestellmenge: 9
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