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IXDD604PI IXDD604PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.19 EUR
45+1.6 EUR
48+1.52 EUR
50+1.43 EUR
51+1.42 EUR
100+1.37 EUR
Mindestbestellmenge: 33
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IXDD604SITR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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MMIX1T600N04T2
+1
 		MMIX1T600N04T2 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Case: SMPD
Kind of channel: enhancement
Technology: GigaMOS™; TrenchT2™
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 590nC
On-state resistance: 1.3mΩ
Drain current: 600A
Power dissipation: 830W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 2kA
auf Bestellung 20 Stücke:
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2+36.79 EUR
20+35.74 EUR
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IXFH30N50P IXFH30N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB197984EACA143&compId=IXFH30N50P.pdf?ci_sign=786e1a8a67c262fcaf9881e21ab55ef68f11b8d1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; PolarHV™
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IXFH30N50Q3 IXFH30N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB1A7B71C31C143&compId=IXFH30N50Q3.pdf?ci_sign=d9b0ae8aa75dd9749244f6c2fb2f64691c7199e6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Technology: HiPerFET™
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IXTQ30N50L IXTQ30N50L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC3D89D624D820&compId=IXTH(Q%2CT)30N50L.pdf?ci_sign=148e8656aef61e8e89994d694bfbdce963d3e1bd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTT30N50L IXTT30N50L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC3D89D624D820&compId=IXTH(Q%2CT)30N50L.pdf?ci_sign=148e8656aef61e8e89994d694bfbdce963d3e1bd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTT30N50P IXTT30N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTH30N50L2 IXTH30N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXFT30N50P IXFT30N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB197984EACA143&compId=IXFH30N50P.pdf?ci_sign=786e1a8a67c262fcaf9881e21ab55ef68f11b8d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
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IXFT30N50Q3 IXFT30N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB1A7B71C31C143&compId=IXFH30N50Q3.pdf?ci_sign=d9b0ae8aa75dd9749244f6c2fb2f64691c7199e6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
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IXTH30N50P IXTH30N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTQ30N50L2 IXTQ30N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTQ30N50P IXTQ30N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTT30N50L2 IXTT30N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTY14N60X2 IXTY14N60X2 IXYS IXTY14N60X2_DS_1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
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LBA716S LBA716S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4F258929B38BF&compId=lba716.pdf?ci_sign=d45d468b46d147689665005b9ee4dfd3cf1d6094 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Turn-on time: 5ms
Turn-off time: 5ms
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.67 EUR
10+7.21 EUR
11+6.82 EUR
100+6.54 EUR
Mindestbestellmenge: 8
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LBA716 LBA716 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE32260C7&compId=LBA716.pdf?ci_sign=b15836e20984726f57cde4fb1541cf40958f3cc0 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Operating temperature: -40...85°C
Mounting: THT
Case: DIP8
Contacts configuration: SPST-NO + SPST-NC
Type of relay: solid state
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 42 Stücke:
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10+7.19 EUR
11+6.79 EUR
Mindestbestellmenge: 10
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MDD142-16N1 MDD142-16N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E076A735FF9E28&compId=MDD142-16N1-DTE.pdf?ci_sign=b81a928fa52fbbec2ea352c4ce2044d25f13adb9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 165A
Max. load current: 300A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 6 Stücke:
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2+61.86 EUR
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DMA150YC1600NA DMA150YC1600NA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA5AF2EE937A7E0CE&compId=DMA150YC1600NA.pdf?ci_sign=eb9d0cd237fe04937e9b7f93c2a2703efc0afafc Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Version: module
Mechanical mounting: screw
Electrical mounting: screw
Type of bridge rectifier: three-phase half bridge
Max. forward voltage: 1.16V
Max. forward impulse current: 700A
Max. off-state voltage: 1.6kV
Load current: 150A
Semiconductor structure: common cathode
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DMA150YA1600NA DMA150YA1600NA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA5AF2D437F59C0CE&compId=DMA150YA1600NA.pdf?ci_sign=981018eb9fe457baa6e6553f151d3e4298168dcd Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Version: module
Mechanical mounting: screw
Electrical mounting: screw
Type of bridge rectifier: three-phase half bridge
Max. forward voltage: 1.16V
Max. forward impulse current: 0.8kA
Max. off-state voltage: 1.6kV
Load current: 150A
Semiconductor structure: common anode
Produkt ist nicht verfügbar
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CPC1966Y CPC1966Y IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98FCB3ADB02BCF8BF&compId=CPC1966.pdf?ci_sign=d8a0ffe0b0c10a0b312f6bc7b4d31fd7f4a4bc52 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Type of relay: solid state
Max. operating current: 3A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Operating temperature: -40...85°C
Control current max.: 50mA
Insulation voltage: 3.75kV
Case: SIP4
Mounting: THT
auf Bestellung 637 Stücke:
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11+6.92 EUR
18+4.09 EUR
19+3.88 EUR
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DSEI120-12A DSEI120-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B98284067443E143&compId=dsei120-12a.pdf?ci_sign=6a60535cc3c98501893d4b09a81381b32c83ed3d description Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 109A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Power dissipation: 357W
Technology: FRED
Kind of package: tube
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.84 EUR
6+13.01 EUR
10+12.73 EUR
30+12.51 EUR
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DSEI120-12AZ-TUB DSEI120-12AZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4B274AB88A0C4&compId=DSEI120-12AZ.pdf?ci_sign=05a92d3aa13572b2603654c465e7fd024cf02c7a Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AAHV; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 109A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO268AAHV
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Power dissipation: 357W
Technology: FRED
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
5+17.26 EUR
6+13.08 EUR
30+12.58 EUR
Mindestbestellmenge: 5
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IXTY1N120P IXTY1N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO252
On-state resistance: 20Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.95 EUR
28+2.65 EUR
30+2.43 EUR
32+2.3 EUR
70+2.22 EUR
Mindestbestellmenge: 25
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IXTP2R4N120P IXTP2R4N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993964EAD3952F8BF&compId=IXT_2R4N120P.pdf?ci_sign=eb8ee9bf4f44f4620c1e19588ea25a870e1c1b6d Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Technology: Polar™
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Gate charge: 37nC
Reverse recovery time: 920ns
On-state resistance: 7.5Ω
Pulsed drain current: 6A
Gate-source voltage: ±30V
Power dissipation: 125W
auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.84 EUR
14+5.32 EUR
15+5.02 EUR
250+4.83 EUR
Mindestbestellmenge: 10
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MCC200-14io1 MCC200-14io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA1C22EF4718520D6&compId=MCC200-14io1.pdf?ci_sign=30e8433f322486eb978085c608c43a3034c71d17 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCC200-18io1 MCC200-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF2578EE46615EA&compId=MCC200-18IO1.pdf?ci_sign=9cebf59deee12ac16ee0b117dec34e4e5e3553ef pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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VGO36-16IO7 VGO36-16IO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6236239A8C0C4&compId=VGO36-16io7.pdf?ci_sign=f9fb0bce59b8ae8122be8b955a3f251a5e31da08 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 36A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 36A
Max. forward impulse current: 280A
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Gate current: 65mA
auf Bestellung 33 Stücke:
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4+21.32 EUR
10+20.45 EUR
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CPC5620A CPC5620A IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EF6508D1A3FE745&compId=CPC5620_21.pdf?ci_sign=87f123f955bcf1144c1b242dd30525007807a0aa Category: Interfaces others - integrated circuits
Description: IC: phone line interface; 2.8÷5.5VDC; PLI; SMD; SO32; tube
Type of integrated circuit: phone line interface
Supply voltage: 2.8...5.5V DC
Interface: PLI
Mounting: SMD
Case: SO32
Integrated circuit features: galvanically isolated
Kind of package: tube
Produkt ist nicht verfügbar
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IXYH60N90C3 IXYH60N90C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB24A40B479820&compId=IXYH60N90C3.pdf?ci_sign=57fc15f8e17396bfde6a9654fad8ffe22b1c18b7 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 60A; 750W; TO247-3
Type of transistor: IGBT
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 104ns
Turn-off time: 268ns
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 310A
auf Bestellung 307 Stücke:
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6+13.9 EUR
9+8.18 EUR
120+8.11 EUR
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IXFT14N80P IXFT14N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF8DAC82F1820&compId=IXFH(Q%2CT)14N80P_S.pdf?ci_sign=54c4a7d42ec81caabad0953bf61c033b9e6baf24 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTQ14N60P IXTQ14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXFA14N60P IXFA14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTA180N10T IXTA180N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D545772189D820&compId=IXTA(P)180N10T.pdf?ci_sign=95831666b0a60635c5fe5a67c516de81d010b765 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.42 EUR
15+4.78 EUR
16+4.52 EUR
25+4.45 EUR
50+4.33 EUR
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CPC1984Y CPC1984Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493853439C0C7&compId=CPC1984Y.pdf?ci_sign=c4456eb49faad16e3d4dbbc32458cf0e8e594af7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 10ms
Max. operating current: 1A
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.66Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 4kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Produkt ist nicht verfügbar
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MCC44-16io1B MCC44-16io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D60D0D8B85E27&compId=MCC44-16IO1B-DTE.pdf?ci_sign=ea286ae49b04ba3e975ed8e5bf2e0596849d9d2c pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Mechanical mounting: screw
Electrical mounting: screw
Case: TO240AA
Type of semiconductor module: thyristor
Gate current: 100/200mA
Max. forward voltage: 1.34V
Load current: 49A
Max. forward impulse current: 1.15kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
auf Bestellung 2 Stücke:
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2+35.75 EUR
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IXTQ69N30P IXTQ69N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D131A4635E27&compId=IXTQ69N30P-DTE.pdf?ci_sign=30ac47e4c9ca5a13d0405042e859205ebf2f7209 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO3P; 330ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: Polar™
Kind of package: tube
Case: TO3P
Polarisation: unipolar
Gate charge: 156nC
Reverse recovery time: 330ns
On-state resistance: 49mΩ
Gate-source voltage: ±20V
Drain current: 69A
Drain-source voltage: 300V
Power dissipation: 500W
Produkt ist nicht verfügbar
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VUO190-08NO7 VUO190-08NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE2BABEF7649AE53672&compId=VUO190-08NO7.pdf?ci_sign=7d5953cf66e9d79c0c489443ea692fb8e2598469 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 240A; Ifsm: 2.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 240A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.07V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
auf Bestellung 19 Stücke:
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1+83.94 EUR
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MD18200S-DKM2MM IXYS littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf?assetguid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8 Category: Diode modules
Description: Module: diode; double,common cathode; 1.8kV; If: 200A; package S
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.5V
Load current: 200A
Max. load current: 310A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 6.5kA
Case: package S
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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PAA191 PAA191 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A860C7&compId=PAA191.pdf?ci_sign=2ffa2a1db02679800af199023510c8a9cfbbbdad Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Mounting: THT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
auf Bestellung 35 Stücke:
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6+12.71 EUR
10+7.24 EUR
11+6.84 EUR
Mindestbestellmenge: 6
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PAA191S PAA191S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A860C7&compId=PAA191.pdf?ci_sign=2ffa2a1db02679800af199023510c8a9cfbbbdad Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Mounting: SMT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
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PAA191STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A860C7&compId=PAA191.pdf?ci_sign=2ffa2a1db02679800af199023510c8a9cfbbbdad Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Mounting: SMT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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PLA191 PLA191 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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PLA191STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXFK300N20X3 IXFK300N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB1B71634818BF&compId=IXF_300N20X3.pdf?ci_sign=d7ceaf98ba04f28d6cca73c11a6a109100fa462b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; TO264
Kind of package: tube
Case: TO264
Kind of channel: enhancement
Mounting: THT
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 170ns
Gate charge: 375nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Produkt ist nicht verfügbar
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MCC200-16io1 IXYS pVersion=0046&contRep=ZT&docId=E29208AD5CE395F19A99005056AB752F&compId=L627.pdf?ci_sign=45ae8fd0beea3436de91781e35bd8c3b2e0c91a8 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXTT170N10P IXTT170N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9185A4CE98DE27&compId=IXTK170N10P-DTE.pdf?ci_sign=9136904f8419278af3f28381c2ff94e364518191 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Kind of channel: enhancement
Case: TO268
Type of transistor: N-MOSFET
Mounting: SMD
Technology: Polar™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Gate charge: 198nC
Reverse recovery time: 120ns
On-state resistance: 9mΩ
Power dissipation: 715W
Gate-source voltage: ±20V
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.57 EUR
7+10.44 EUR
30+10.04 EUR
Mindestbestellmenge: 5
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IXTK170N10P IXTK170N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9185A4CE98DE27&compId=IXTK170N10P-DTE.pdf?ci_sign=9136904f8419278af3f28381c2ff94e364518191 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of channel: enhancement
Reverse recovery time: 120ns
Kind of package: tube
auf Bestellung 312 Stücke:
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6+12.26 EUR
7+10.4 EUR
25+10.28 EUR
100+9.98 EUR
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IXTQ52N30P IXTQ52N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90C271079FBE27&compId=IXTQ52N30P-DTE.pdf?ci_sign=cf659494e94781585499e1614568475c46cc3563 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO3P; 250ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 52A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Kind of package: tube
auf Bestellung 199 Stücke:
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10+7.94 EUR
13+5.68 EUR
14+5.36 EUR
Mindestbestellmenge: 10
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IXTY3N50P IXTY3N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Kind of package: tube
auf Bestellung 104 Stücke:
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104+0.69 EUR
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IXTA3N50P IXTA3N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Kind of package: tube
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
Mindestbestellmenge: 10
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IXFB44N100P IXFB44N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED47B1C40012A18&compId=IXFB44N100P.pdf?ci_sign=fe6581ef286df05fe0b0acd958d2ed414c5337a2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Kind of package: tube
auf Bestellung 55 Stücke:
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3+28.19 EUR
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IXFK140N30P IXFK140N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5FBBF2FB0F8BF&compId=IXFK140N30P_IXFX140N30P.pdf?ci_sign=6d081054787efa2c56b843d54a6d6c3f464460d2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 140A
Gate charge: 185nC
Reverse recovery time: 200ns
On-state resistance: 24mΩ
Power dissipation: 1.04kW
Gate-source voltage: ±20V
Case: TO264
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
auf Bestellung 272 Stücke:
Lieferzeit 14-21 Tag (e)
4+20.59 EUR
10+19.81 EUR
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IXFB60N80P IXFB60N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B28FB248CCFA4A15&compId=IXFB60N80P.pdf?ci_sign=74ac471adf1c30241a4f29653fe0f24dc4a054f0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
auf Bestellung 3 Stücke:
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3+29.82 EUR
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IXFR18N90P IXFR18N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B09820&compId=IXFR18N90P.pdf?ci_sign=630c9b0ce412688e2b82a725d5ca14f372c1c7c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 10.5A; Idm: 36A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 10.5A
Pulsed drain current: 36A
Power dissipation: 200W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.79 EUR
6+12.37 EUR
7+11.68 EUR
Mindestbestellmenge: 5
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IXFH120N15P IXFH120N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
auf Bestellung 217 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.3 EUR
9+8.24 EUR
10+7.52 EUR
30+7.49 EUR
Mindestbestellmenge: 7
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IXFH52N30P IXFH52N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5E98F50BC18BF&compId=IXF(V%2CH)52N30P(S).pdf?ci_sign=364d4b58b7cffdd5dffcd14a44a5a11a01598e3a Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 110nC
Reverse recovery time: 160ns
On-state resistance: 73mΩ
Gate-source voltage: ±20V
Drain current: 52A
Drain-source voltage: 300V
Power dissipation: 400W
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.75 EUR
12+6.18 EUR
13+5.83 EUR
120+5.68 EUR
Mindestbestellmenge: 9
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IXFB300N10P IXFB300N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED46E259E172A18&compId=IXFB300N10P.pdf?ci_sign=9dc76b5f08d73e0cf6cbcdad5881837d048e6e99 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 1.5kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 279nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Kind of package: tube
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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MMIX1F40N110P MMIX1F40N110P IXYS DS100431(MMIX1F40N110P).pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
2+60.78 EUR
10+58.46 EUR
20+58.43 EUR
Mindestbestellmenge: 2
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IXDD604PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDD604PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.19 EUR
45+1.6 EUR
48+1.52 EUR
50+1.43 EUR
51+1.42 EUR
100+1.37 EUR
Mindestbestellmenge: 33
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IXDD604SITR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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MMIX1T600N04T2 littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf
MMIX1T600N04T2
+1
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Case: SMPD
Kind of channel: enhancement
Technology: GigaMOS™; TrenchT2™
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 590nC
On-state resistance: 1.3mΩ
Drain current: 600A
Power dissipation: 830W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 2kA
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+36.79 EUR
20+35.74 EUR
Mindestbestellmenge: 2
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IXFH30N50P pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB197984EACA143&compId=IXFH30N50P.pdf?ci_sign=786e1a8a67c262fcaf9881e21ab55ef68f11b8d1
IXFH30N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; PolarHV™
Produkt ist nicht verfügbar
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IXFH30N50Q3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB1A7B71C31C143&compId=IXFH30N50Q3.pdf?ci_sign=d9b0ae8aa75dd9749244f6c2fb2f64691c7199e6
IXFH30N50Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Technology: HiPerFET™
Produkt ist nicht verfügbar
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IXTQ30N50L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC3D89D624D820&compId=IXTH(Q%2CT)30N50L.pdf?ci_sign=148e8656aef61e8e89994d694bfbdce963d3e1bd
IXTQ30N50L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTT30N50L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC3D89D624D820&compId=IXTH(Q%2CT)30N50L.pdf?ci_sign=148e8656aef61e8e89994d694bfbdce963d3e1bd
IXTT30N50L
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTT30N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217
IXTT30N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTH30N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00
IXTH30N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXFT30N50P pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB197984EACA143&compId=IXFH30N50P.pdf?ci_sign=786e1a8a67c262fcaf9881e21ab55ef68f11b8d1
IXFT30N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT30N50Q3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB1A7B71C31C143&compId=IXFH30N50Q3.pdf?ci_sign=d9b0ae8aa75dd9749244f6c2fb2f64691c7199e6
IXFT30N50Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTH30N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217
IXTH30N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTQ30N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00
IXTQ30N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTQ30N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217
IXTQ30N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTT30N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00
IXTT30N50L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTY14N60X2 IXTY14N60X2_DS_1.pdf
IXTY14N60X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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LBA716S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4F258929B38BF&compId=lba716.pdf?ci_sign=d45d468b46d147689665005b9ee4dfd3cf1d6094
LBA716S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Turn-on time: 5ms
Turn-off time: 5ms
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.67 EUR
10+7.21 EUR
11+6.82 EUR
100+6.54 EUR
Mindestbestellmenge: 8
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LBA716 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE32260C7&compId=LBA716.pdf?ci_sign=b15836e20984726f57cde4fb1541cf40958f3cc0
LBA716
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Operating temperature: -40...85°C
Mounting: THT
Case: DIP8
Contacts configuration: SPST-NO + SPST-NC
Type of relay: solid state
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.19 EUR
11+6.79 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
MDD142-16N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E076A735FF9E28&compId=MDD142-16N1-DTE.pdf?ci_sign=b81a928fa52fbbec2ea352c4ce2044d25f13adb9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MDD142-16N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 165A
Max. load current: 300A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+61.86 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DMA150YC1600NA pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA5AF2EE937A7E0CE&compId=DMA150YC1600NA.pdf?ci_sign=eb9d0cd237fe04937e9b7f93c2a2703efc0afafc
DMA150YC1600NA
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Version: module
Mechanical mounting: screw
Electrical mounting: screw
Type of bridge rectifier: three-phase half bridge
Max. forward voltage: 1.16V
Max. forward impulse current: 700A
Max. off-state voltage: 1.6kV
Load current: 150A
Semiconductor structure: common cathode
Produkt ist nicht verfügbar
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DMA150YA1600NA pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA5AF2D437F59C0CE&compId=DMA150YA1600NA.pdf?ci_sign=981018eb9fe457baa6e6553f151d3e4298168dcd
DMA150YA1600NA
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Version: module
Mechanical mounting: screw
Electrical mounting: screw
Type of bridge rectifier: three-phase half bridge
Max. forward voltage: 1.16V
Max. forward impulse current: 0.8kA
Max. off-state voltage: 1.6kV
Load current: 150A
Semiconductor structure: common anode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC1966Y pVersion=0046&contRep=ZT&docId=005056AB82531EE98FCB3ADB02BCF8BF&compId=CPC1966.pdf?ci_sign=d8a0ffe0b0c10a0b312f6bc7b4d31fd7f4a4bc52
CPC1966Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Type of relay: solid state
Max. operating current: 3A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Operating temperature: -40...85°C
Control current max.: 50mA
Insulation voltage: 3.75kV
Case: SIP4
Mounting: THT
auf Bestellung 637 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.92 EUR
18+4.09 EUR
19+3.88 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
DSEI120-12A description pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B98284067443E143&compId=dsei120-12a.pdf?ci_sign=6a60535cc3c98501893d4b09a81381b32c83ed3d
DSEI120-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 109A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Power dissipation: 357W
Technology: FRED
Kind of package: tube
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.84 EUR
6+13.01 EUR
10+12.73 EUR
30+12.51 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DSEI120-12AZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4B274AB88A0C4&compId=DSEI120-12AZ.pdf?ci_sign=05a92d3aa13572b2603654c465e7fd024cf02c7a
DSEI120-12AZ-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AAHV; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 109A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO268AAHV
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Power dissipation: 357W
Technology: FRED
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+17.26 EUR
6+13.08 EUR
30+12.58 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXTY1N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0
IXTY1N120P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO252
On-state resistance: 20Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.95 EUR
28+2.65 EUR
30+2.43 EUR
32+2.3 EUR
70+2.22 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IXTP2R4N120P pVersion=0046&contRep=ZT&docId=005056AB82531EE993964EAD3952F8BF&compId=IXT_2R4N120P.pdf?ci_sign=eb8ee9bf4f44f4620c1e19588ea25a870e1c1b6d
IXTP2R4N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Technology: Polar™
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Gate charge: 37nC
Reverse recovery time: 920ns
On-state resistance: 7.5Ω
Pulsed drain current: 6A
Gate-source voltage: ±30V
Power dissipation: 125W
auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.84 EUR
14+5.32 EUR
15+5.02 EUR
250+4.83 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
MCC200-14io1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA1C22EF4718520D6&compId=MCC200-14io1.pdf?ci_sign=30e8433f322486eb978085c608c43a3034c71d17 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCC200-14io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+104.4 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MCC200-18io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF2578EE46615EA&compId=MCC200-18IO1.pdf?ci_sign=9cebf59deee12ac16ee0b117dec34e4e5e3553ef pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCC200-18io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+113.1 EUR
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VGO36-16IO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6236239A8C0C4&compId=VGO36-16io7.pdf?ci_sign=f9fb0bce59b8ae8122be8b955a3f251a5e31da08
VGO36-16IO7
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 36A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 36A
Max. forward impulse current: 280A
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Gate current: 65mA
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.32 EUR
10+20.45 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
CPC5620A pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EF6508D1A3FE745&compId=CPC5620_21.pdf?ci_sign=87f123f955bcf1144c1b242dd30525007807a0aa
CPC5620A
Hersteller: IXYS
Category: Interfaces others - integrated circuits
Description: IC: phone line interface; 2.8÷5.5VDC; PLI; SMD; SO32; tube
Type of integrated circuit: phone line interface
Supply voltage: 2.8...5.5V DC
Interface: PLI
Mounting: SMD
Case: SO32
Integrated circuit features: galvanically isolated
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH60N90C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB24A40B479820&compId=IXYH60N90C3.pdf?ci_sign=57fc15f8e17396bfde6a9654fad8ffe22b1c18b7
IXYH60N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 60A; 750W; TO247-3
Type of transistor: IGBT
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 104ns
Turn-off time: 268ns
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 310A
auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.9 EUR
9+8.18 EUR
120+8.11 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFT14N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF8DAC82F1820&compId=IXFH(Q%2CT)14N80P_S.pdf?ci_sign=54c4a7d42ec81caabad0953bf61c033b9e6baf24
IXFT14N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTQ14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d
IXTQ14N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56
IXFA14N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA180N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D545772189D820&compId=IXTA(P)180N10T.pdf?ci_sign=95831666b0a60635c5fe5a67c516de81d010b765
IXTA180N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.42 EUR
15+4.78 EUR
16+4.52 EUR
25+4.45 EUR
50+4.33 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
CPC1984Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493853439C0C7&compId=CPC1984Y.pdf?ci_sign=c4456eb49faad16e3d4dbbc32458cf0e8e594af7
CPC1984Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 10ms
Max. operating current: 1A
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.66Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 4kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC44-16io1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D60D0D8B85E27&compId=MCC44-16IO1B-DTE.pdf?ci_sign=ea286ae49b04ba3e975ed8e5bf2e0596849d9d2c pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCC44-16io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Mechanical mounting: screw
Electrical mounting: screw
Case: TO240AA
Type of semiconductor module: thyristor
Gate current: 100/200mA
Max. forward voltage: 1.34V
Load current: 49A
Max. forward impulse current: 1.15kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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IXTQ69N30P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D131A4635E27&compId=IXTQ69N30P-DTE.pdf?ci_sign=30ac47e4c9ca5a13d0405042e859205ebf2f7209
IXTQ69N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO3P; 330ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: Polar™
Kind of package: tube
Case: TO3P
Polarisation: unipolar
Gate charge: 156nC
Reverse recovery time: 330ns
On-state resistance: 49mΩ
Gate-source voltage: ±20V
Drain current: 69A
Drain-source voltage: 300V
Power dissipation: 500W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VUO190-08NO7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE2BABEF7649AE53672&compId=VUO190-08NO7.pdf?ci_sign=7d5953cf66e9d79c0c489443ea692fb8e2598469
VUO190-08NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 240A; Ifsm: 2.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 240A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.07V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+83.94 EUR
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MD18200S-DKM2MM littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf?assetguid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.8kV; If: 200A; package S
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.5V
Load current: 200A
Max. load current: 310A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 6.5kA
Case: package S
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAA191 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A860C7&compId=PAA191.pdf?ci_sign=2ffa2a1db02679800af199023510c8a9cfbbbdad
PAA191
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Mounting: THT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.71 EUR
10+7.24 EUR
11+6.84 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
PAA191S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A860C7&compId=PAA191.pdf?ci_sign=2ffa2a1db02679800af199023510c8a9cfbbbdad
PAA191S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Mounting: SMT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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PAA191STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A860C7&compId=PAA191.pdf?ci_sign=2ffa2a1db02679800af199023510c8a9cfbbbdad
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Mounting: SMT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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PLA191 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b
PLA191
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PLA191STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK300N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB1B71634818BF&compId=IXF_300N20X3.pdf?ci_sign=d7ceaf98ba04f28d6cca73c11a6a109100fa462b
IXFK300N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; TO264
Kind of package: tube
Case: TO264
Kind of channel: enhancement
Mounting: THT
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 170ns
Gate charge: 375nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC200-16io1 pVersion=0046&contRep=ZT&docId=E29208AD5CE395F19A99005056AB752F&compId=L627.pdf?ci_sign=45ae8fd0beea3436de91781e35bd8c3b2e0c91a8 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTT170N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9185A4CE98DE27&compId=IXTK170N10P-DTE.pdf?ci_sign=9136904f8419278af3f28381c2ff94e364518191
IXTT170N10P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Kind of channel: enhancement
Case: TO268
Type of transistor: N-MOSFET
Mounting: SMD
Technology: Polar™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Gate charge: 198nC
Reverse recovery time: 120ns
On-state resistance: 9mΩ
Power dissipation: 715W
Gate-source voltage: ±20V
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.57 EUR
7+10.44 EUR
30+10.04 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXTK170N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9185A4CE98DE27&compId=IXTK170N10P-DTE.pdf?ci_sign=9136904f8419278af3f28381c2ff94e364518191
IXTK170N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of channel: enhancement
Reverse recovery time: 120ns
Kind of package: tube
auf Bestellung 312 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.26 EUR
7+10.4 EUR
25+10.28 EUR
100+9.98 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ52N30P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90C271079FBE27&compId=IXTQ52N30P-DTE.pdf?ci_sign=cf659494e94781585499e1614568475c46cc3563
IXTQ52N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO3P; 250ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 52A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Kind of package: tube
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.94 EUR
13+5.68 EUR
14+5.36 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXTY3N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4
IXTY3N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Kind of package: tube
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
104+0.69 EUR
Mindestbestellmenge: 104
Im Einkaufswagen  Stück im Wert von  UAH
IXTA3N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4
IXTA3N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Kind of package: tube
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXFB44N100P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED47B1C40012A18&compId=IXFB44N100P.pdf?ci_sign=fe6581ef286df05fe0b0acd958d2ed414c5337a2
IXFB44N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Kind of package: tube
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+28.19 EUR
Mindestbestellmenge: 3
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IXFK140N30P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5FBBF2FB0F8BF&compId=IXFK140N30P_IXFX140N30P.pdf?ci_sign=6d081054787efa2c56b843d54a6d6c3f464460d2
IXFK140N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 140A
Gate charge: 185nC
Reverse recovery time: 200ns
On-state resistance: 24mΩ
Power dissipation: 1.04kW
Gate-source voltage: ±20V
Case: TO264
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
auf Bestellung 272 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.59 EUR
10+19.81 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFB60N80P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B28FB248CCFA4A15&compId=IXFB60N80P.pdf?ci_sign=74ac471adf1c30241a4f29653fe0f24dc4a054f0
IXFB60N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.82 EUR
Mindestbestellmenge: 3
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IXFR18N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B09820&compId=IXFR18N90P.pdf?ci_sign=630c9b0ce412688e2b82a725d5ca14f372c1c7c0
IXFR18N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 10.5A; Idm: 36A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 10.5A
Pulsed drain current: 36A
Power dissipation: 200W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.79 EUR
6+12.37 EUR
7+11.68 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFH120N15P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052
IXFH120N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
auf Bestellung 217 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.3 EUR
9+8.24 EUR
10+7.52 EUR
30+7.49 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFH52N30P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5E98F50BC18BF&compId=IXF(V%2CH)52N30P(S).pdf?ci_sign=364d4b58b7cffdd5dffcd14a44a5a11a01598e3a
IXFH52N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 110nC
Reverse recovery time: 160ns
On-state resistance: 73mΩ
Gate-source voltage: ±20V
Drain current: 52A
Drain-source voltage: 300V
Power dissipation: 400W
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.75 EUR
12+6.18 EUR
13+5.83 EUR
120+5.68 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFB300N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED46E259E172A18&compId=IXFB300N10P.pdf?ci_sign=9dc76b5f08d73e0cf6cbcdad5881837d048e6e99
IXFB300N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 1.5kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 279nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Kind of package: tube
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MMIX1F40N110P DS100431(MMIX1F40N110P).pdf
MMIX1F40N110P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+60.78 EUR
10+58.46 EUR
20+58.43 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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