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DSSK40-006B DSSK40-006B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BEDE1D97E7F98BF&compId=DSSK40-006B.pdf?ci_sign=9bf8f54b3f4471da5521b9ae2a65b7b5d865e2fd Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 20Ax2; TO247-3; Ufmax: 0.5V
Kind of package: tube
Mounting: THT
Max. forward impulse current: 0.5kA
Power dissipation: 150W
Type of diode: Schottky rectifying
Load current: 20A x2
Max. forward voltage: 0.5V
Max. off-state voltage: 60V
Case: TO247-3
Semiconductor structure: common cathode; double
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DSSK40-008B DSSK40-008B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB8ABA26A3D8BF&compId=DSSK40-008B.pdf?ci_sign=d6e1d497b4e9caad28525ccc6f0f591b4417d3d9 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 20Ax2; TO247-3; Ufmax: 0.57V
Kind of package: tube
Mounting: THT
Max. forward impulse current: 0.5kA
Power dissipation: 115W
Type of diode: Schottky rectifying
Load current: 20A x2
Max. forward voltage: 0.57V
Max. off-state voltage: 80V
Case: TO247-3
Semiconductor structure: common cathode; double
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IXTJ4N150 IXTJ4N150 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE88AEF8FFFD52F13D1&compId=IXTJ4N150.pdf?ci_sign=98054bbf38cae70553bc587ef93497c3257e4fed Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 110W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
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IXTA4N150HV IXTA4N150HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4FFE04D7BF820&compId=IXTA(T)4N150HV.pdf?ci_sign=ec9174563c34e31231ef390b44e76d450e2c55dc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
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IXTH4N150 IXTH4N150 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494FF820&compId=IXTH4N150.pdf?ci_sign=7ee4dfc0f51419d8a3e85073d6cfaef92c301795 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO247-3
On-state resistance: 6Ω
Mounting: THT
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
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IXTT4N150HV IXTT4N150HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4FFE04D7BF820&compId=IXTA(T)4N150HV.pdf?ci_sign=ec9174563c34e31231ef390b44e76d450e2c55dc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO268HV; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO268HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
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DSEI2X30-12B DSEI2X30-12B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF2376DF3A1F5EA&compId=DSEI2X30-12B.pdf?ci_sign=111738f22df8f18aecc3d2682c1007fb4c5ff4ca Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 27Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.2V
Load current: 27A x2
Semiconductor structure: double independent
Max. forward impulse current: 375A
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
auf Bestellung 97 Stücke:
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3+28.43 EUR
10+28.41 EUR
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DSEP30-12B DSEP30-12B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8E9FA31CD45960C4&compId=DSEP30-12B.pdf?ci_sign=d28e281735b3bfc38bce88f4534d9d13f2a00f49 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Mounting: THT
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 3.75V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 200A
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
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PM1206S PM1206S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3160C7&compId=PM1206.pdf?ci_sign=c09be491d231e3d21eac1f0a3551944d7ccc748d Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
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PM1205S PM1205S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
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PM1205STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
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PM1206STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3160C7&compId=PM1206.pdf?ci_sign=c09be491d231e3d21eac1f0a3551944d7ccc748d Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
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IXFN520N075T2 IXFN520N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C436477B578BF&compId=IXFN520N075T2.pdf?ci_sign=da0994bc8236c5e5fae595d8fdc5eb075706d345 Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 75V
Drain current: 480A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.9mΩ
Pulsed drain current: 1.5kA
Power dissipation: 940W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate charge: 545nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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MIXA10WB1200TED IXYS MIXA10WB1200TED.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 12A
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 60W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
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MMIX1X340N65B4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA78862F0E7820&compId=MMIX1X340N65B4.pdf?ci_sign=d2491b7f4fdece1fa3ddaa0a18602d4894132816 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 650V; 295A; 1.2kW; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; XPT™
Power dissipation: 1.2kW
Case: SMPD
Mounting: SMD
Gate charge: 553nC
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 295A
Pulsed collector current: 1.2kA
Turn-off time: 346ns
Turn-on time: 119ns
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IXFP18N65X2 IXFP18N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99097BF3E60CAD8BF&compId=IXF_18N65X2.pdf?ci_sign=ca3bb5a7d1dc01179cd59a86ff8db7c31cd310ae Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXFP18N65X2M IXFP18N65X2M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99097D394767F98BF&compId=IXFP18N65X2M.pdf?ci_sign=8bb4700710f80bf16b6ec7153d238ece41bb708b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXFA18N65X2 IXFA18N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99097BF3E60CAD8BF&compId=IXF_18N65X2.pdf?ci_sign=ca3bb5a7d1dc01179cd59a86ff8db7c31cd310ae Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXFH18N65X2 IXFH18N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99097BF3E60CAD8BF&compId=IXF_18N65X2.pdf?ci_sign=ca3bb5a7d1dc01179cd59a86ff8db7c31cd310ae Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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VBE17-06NO7 VBE17-06NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86EB95AF8C9A00C4&compId=VBE17-06NO7.pdf?ci_sign=a8393222091d5a54bd260b4883ffeacf5c883410 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 27A; Ifsm: 45A; THT
Case: ECO-PAC 1
Electrical mounting: THT
Technology: FRED
Mechanical mounting: screw
Type of bridge rectifier: single-phase
Max. forward impulse current: 45A
Load current: 27A
Max. off-state voltage: 0.6kV
Version: module
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.06 EUR
5+14.49 EUR
6+13.7 EUR
Mindestbestellmenge: 4
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MDD56-16N1B MDD56-16N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E06982B577DE28&compId=MDD56-16N1B-DTE.pdf?ci_sign=f249fbefd7ae5629f569d47942afd60d8d958054 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.19kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
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3+30.74 EUR
15+30.56 EUR
36+29.56 EUR
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MDD56-08N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB830AA8ECAC20C4&compId=MDD56-08N1B.pdf?ci_sign=42161659a37c8c1cda6b40941f4abc1696c36d66 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 800V; If: 71A; TO240AA; Ufmax: 1.14V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
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MDD56-14N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8311B658BFE0C4&compId=MDD56-14N1B.pdf?ci_sign=70c40e7ced289e91e572ffb0c5aeac5996b040b7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
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MDD56-18N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED980BC786EEF238143&compId=MDD56-18N1B.pdf?ci_sign=2a69d07588eab47533278c757c686382a3bfc1ca pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
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IXFN160N30T IXFN160N30T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF90EF782821820&compId=IXFN160N30T.pdf?ci_sign=4f514305338d34fe8741e1d339673060b3d7fe0d Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 130A
Pulsed drain current: 444A
Power dissipation: 900W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Gate charge: 376nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
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IXFK160N30T IXFK160N30T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CE9C427165138BF&compId=IXF_160N30T.pdf?ci_sign=23e001151aa4a4de2e7e32da29e7d4519594f256 Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Kind of package: tube
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IXFX160N30T IXFX160N30T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CE9C427165138BF&compId=IXF_160N30T.pdf?ci_sign=23e001151aa4a4de2e7e32da29e7d4519594f256 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160A; 1390W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: PLUS247™
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
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DLA100B1200LB-TRR IXYS DLA100B1200LB.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 124A
Max. forward impulse current: 0.4kA
Case: SMPD-B
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.23V
Produkt ist nicht verfügbar
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DSA1-18D DSA1-18D IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82836F916CE143&compId=DSA1-18D.pdf?ci_sign=452a5902ddb9885d20bbcd189749dd424e83331a Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
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MEE300-06DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Case: Y4-M6
Max. forward impulse current: 2.4kA
Semiconductor structure: double series
Max. off-state voltage: 0.6kV
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.19V
Load current: 304A
Produkt ist nicht verfügbar
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PBB150P PBB150P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98000C7&compId=PBB150.pdf?ci_sign=53228664f7974af186a6902863b946cc72ea609c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
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PBB150 PBB150 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98000C7&compId=PBB150.pdf?ci_sign=53228664f7974af186a6902863b946cc72ea609c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
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PBB150PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98000C7&compId=PBB150.pdf?ci_sign=53228664f7974af186a6902863b946cc72ea609c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
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PBB150S PBB150S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98000C7&compId=PBB150.pdf?ci_sign=53228664f7974af186a6902863b946cc72ea609c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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PBB150STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98000C7&compId=PBB150.pdf?ci_sign=53228664f7974af186a6902863b946cc72ea609c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
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DSP25-16A DSP25-16A IXYS media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: double series
Case: TO247-3
Max. forward voltage: 1.23V
Max. forward impulse current: 0.3kA
Power dissipation: 160W
Kind of package: tube
auf Bestellung 21 Stücke:
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11+6.69 EUR
15+4.8 EUR
16+4.55 EUR
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DSP25-12A DSP25-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEEC87D9A344143&compId=DSP25-12A.pdf?ci_sign=9b32012fa217f3b41cdd73f28c4975da5fe89caa Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Mounting: THT
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.16V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Type of diode: rectifying
auf Bestellung 263 Stücke:
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DSP25-16AR DSP25-16AR IXYS media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 28Ax2; tube; Ifsm: 300A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 28A x2
Semiconductor structure: double series
Case: ISOPLUS247™
Max. forward voltage: 1.23V
Max. forward impulse current: 0.3kA
Power dissipation: 100W
Kind of package: tube
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7+11.81 EUR
8+9.21 EUR
10+9.14 EUR
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DSP25-12AT-TUB DSP25-12AT-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC49AB384BDC0C4&compId=DSP25-12AT.pdf?ci_sign=0302a724ac37173f94b33d568f44736a7744ea9e Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.16V
Load current: 25A
Semiconductor structure: double series
Max. forward impulse current: 0.3kA
Power dissipation: 160W
Type of diode: rectifying
Mounting: SMD
Case: D3PAK
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8+9.7 EUR
11+6.58 EUR
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DSP25-16AT-TUB DSP25-16AT-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC498C99CFDA0C4&compId=DSP25-16AT.pdf?ci_sign=0b5fa43321000384158f4db8f203a913258a48d6 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: double series
Case: D3PAK
Max. forward voltage: 1.16V
Max. forward impulse current: 0.3kA
Power dissipation: 160W
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DCG160X650NA DCG160X650NA IXYS Category: Diode modules
Description: Module: diode; double independent; 650V; 80Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Electrical mounting: screw
Technology: SiC
Max. forward voltage: 1.35V
Load current: 80A x2
Max. off-state voltage: 650V
Case: SOT227B
Produkt ist nicht verfügbar
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DSEC30-06A DSEC30-06A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEF0F660419E143&compId=DSEC30-06A.pdf?ci_sign=c8a59cda1c2c33fe8c2416df720e7457f27646d2 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 110A; TO247-3; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: TO247-3
Max. forward voltage: 1.57V
Power dissipation: 95W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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13+5.93 EUR
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DSEC30-06B DSEC30-06B IXYS media?resourcetype=datasheets&itemid=afd19e64-74f8-4ee9-aa71-195aeedffb06&filename=Littelfuse-Power-Semiconductors-DSEC30-06B-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 110A; TO247-3; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: TO247-3
Max. forward voltage: 2.03V
Power dissipation: 95W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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15+4.86 EUR
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DSEC30-12A DSEC30-12A IXYS media?resourcetype=datasheets&itemid=449d027a-83b1-47f6-b255-dd89c85a9bad&filename=Littelfuse-Power-Semiconductors-DSEC30-12A-Datasheet description Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15Ax2; tube; Ifsm: 90A; TO247-3; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-3
Max. forward voltage: 2.61V
Power dissipation: 95W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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VHF25-12IO7 VHF25-12IO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1944179591820&compId=VHF25-ser.pdf?ci_sign=b45349266645b088e679b0569fcbdcd6528c9f31 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Case: ECO-PAC 1
Features of semiconductor devices: freewheelling diode
Mechanical mounting: screw
Electrical mounting: THT
Leads: wire Ø 0.75mm
Version: module
Load current: 32A
Max. forward impulse current: 180A
Max. off-state voltage: 1.2kV
Gate current: 25/50mA
Type of bridge rectifier: half-controlled
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4+20.78 EUR
5+15.66 EUR
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IXTT16P60P IXTT16P60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E619805AB38BF&compId=IXT_16P60P.pdf?ci_sign=0e81182102286b9c0016837af235ac11d15c7957 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO268
Mounting: SMD
Technology: PolarP™
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO268
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -16A
Gate charge: 92nC
Reverse recovery time: 440ns
On-state resistance: 720mΩ
Gate-source voltage: ±20V
Power dissipation: 460W
auf Bestellung 147 Stücke:
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5+17.33 EUR
6+12.4 EUR
7+11.71 EUR
30+11.27 EUR
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IXDD604SI IXDD604SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 103 Stücke:
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27+2.73 EUR
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50+2.49 EUR
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IXDI604PI IXDI604PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 1010 Stücke:
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33+2.19 EUR
45+1.6 EUR
48+1.5 EUR
51+1.42 EUR
100+1.36 EUR
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IXFR32N100Q3 IXFR32N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C11820&compId=IXFR32N100Q3.pdf?ci_sign=207d43adf354c4b1b1b46c20c722f96e3911f588 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
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2+41.06 EUR
3+41.04 EUR
30+39.47 EUR
Mindestbestellmenge: 2
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IXTP2N100P IXTP2N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA1618BD17820&compId=IXTA(P%2CY)2N100P.pdf?ci_sign=ed9b99ae18ad9cc7de5cc0535e18145ae9cd8895 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 800ns
Features of semiconductor devices: standard power mosfet
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IXFR32N100P IXFR32N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BFB820&compId=IXFR32N100P.pdf?ci_sign=286c97be0b3093d0dac3237c4fe3344de0bb073d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX32N100P IXFX32N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC1DC4FAEC1820&compId=IXFK(X)32N100P.pdf?ci_sign=d4d0595112cc0bc4e87edb1f70eff260601fd64c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
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IXFN32N100P IXFN32N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA74E5CF81FB820&compId=IXFN32N100P.pdf?ci_sign=c6d0cb810ecde8e0355671243a182c74de859f98 Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 27A
Pulsed drain current: 75A
Power dissipation: 690W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 225nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
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IXFN32N100Q3 IXFN32N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7571BA8393820&compId=IXFN32N100Q3.pdf?ci_sign=fd58e0d88c30b499af20f812a74ae8d4f3224225 Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 28A
Pulsed drain current: 96A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 195nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
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IXTN22N100L IXTN22N100L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA743238E52B820&compId=IXTN22N100L.pdf?ci_sign=bd0f90a435af556a9c7a240091db1d3ed3d343fd Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Pulsed drain current: 50A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.6Ω
Gate charge: 0.27µC
Kind of channel: enhancement
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 1µs
Technology: Linear™
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFK32N100P IXFK32N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC1DC4FAEC1820&compId=IXFK(X)32N100P.pdf?ci_sign=d4d0595112cc0bc4e87edb1f70eff260601fd64c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTX22N100L IXTX22N100L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD1D9980B2F820&compId=IXTK(X)22N100L.pdf?ci_sign=0615493c1b1063422d61a154cca03734f6f66ba8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXFK32N100Q3 IXFK32N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A93A81055778BF&compId=IXF_32N100Q3.pdf?ci_sign=e4e37fba8c821b262a57b3694710db983ba811c8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK52N100X IXFK52N100X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2894A9AD9909820&compId=IXFK(X)52N100X.pdf?ci_sign=d2feeeb089048c7914dc2f8557add2bc13006bca Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 245nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 260ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXFX32N100Q3 IXFX32N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A93A81055778BF&compId=IXF_32N100Q3.pdf?ci_sign=e4e37fba8c821b262a57b3694710db983ba811c8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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DSSK40-006B pVersion=0046&contRep=ZT&docId=005056AB82531EE98BEDE1D97E7F98BF&compId=DSSK40-006B.pdf?ci_sign=9bf8f54b3f4471da5521b9ae2a65b7b5d865e2fd
DSSK40-006B
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 20Ax2; TO247-3; Ufmax: 0.5V
Kind of package: tube
Mounting: THT
Max. forward impulse current: 0.5kA
Power dissipation: 150W
Type of diode: Schottky rectifying
Load current: 20A x2
Max. forward voltage: 0.5V
Max. off-state voltage: 60V
Case: TO247-3
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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DSSK40-008B pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB8ABA26A3D8BF&compId=DSSK40-008B.pdf?ci_sign=d6e1d497b4e9caad28525ccc6f0f591b4417d3d9
DSSK40-008B
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 20Ax2; TO247-3; Ufmax: 0.57V
Kind of package: tube
Mounting: THT
Max. forward impulse current: 0.5kA
Power dissipation: 115W
Type of diode: Schottky rectifying
Load current: 20A x2
Max. forward voltage: 0.57V
Max. off-state voltage: 80V
Case: TO247-3
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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IXTJ4N150 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88AEF8FFFD52F13D1&compId=IXTJ4N150.pdf?ci_sign=98054bbf38cae70553bc587ef93497c3257e4fed
IXTJ4N150
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 110W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
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IXTA4N150HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4FFE04D7BF820&compId=IXTA(T)4N150HV.pdf?ci_sign=ec9174563c34e31231ef390b44e76d450e2c55dc
IXTA4N150HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
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IXTH4N150 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494FF820&compId=IXTH4N150.pdf?ci_sign=7ee4dfc0f51419d8a3e85073d6cfaef92c301795
IXTH4N150
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO247-3
On-state resistance: 6Ω
Mounting: THT
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
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IXTT4N150HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4FFE04D7BF820&compId=IXTA(T)4N150HV.pdf?ci_sign=ec9174563c34e31231ef390b44e76d450e2c55dc
IXTT4N150HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO268HV; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO268HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
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DSEI2X30-12B pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF2376DF3A1F5EA&compId=DSEI2X30-12B.pdf?ci_sign=111738f22df8f18aecc3d2682c1007fb4c5ff4ca
DSEI2X30-12B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 27Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.2V
Load current: 27A x2
Semiconductor structure: double independent
Max. forward impulse current: 375A
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+28.43 EUR
10+28.41 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DSEP30-12B pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8E9FA31CD45960C4&compId=DSEP30-12B.pdf?ci_sign=d28e281735b3bfc38bce88f4534d9d13f2a00f49
DSEP30-12B
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Mounting: THT
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 3.75V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 200A
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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PM1206S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3160C7&compId=PM1206.pdf?ci_sign=c09be491d231e3d21eac1f0a3551944d7ccc748d
PM1206S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
Produkt ist nicht verfügbar
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PM1205S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22
PM1205S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
Produkt ist nicht verfügbar
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PM1205STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
Produkt ist nicht verfügbar
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PM1206STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3160C7&compId=PM1206.pdf?ci_sign=c09be491d231e3d21eac1f0a3551944d7ccc748d
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
Produkt ist nicht verfügbar
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IXFN520N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C436477B578BF&compId=IXFN520N075T2.pdf?ci_sign=da0994bc8236c5e5fae595d8fdc5eb075706d345
IXFN520N075T2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 75V
Drain current: 480A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.9mΩ
Pulsed drain current: 1.5kA
Power dissipation: 940W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate charge: 545nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MIXA10WB1200TED MIXA10WB1200TED.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 12A
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 60W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MMIX1X340N65B4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA78862F0E7820&compId=MMIX1X340N65B4.pdf?ci_sign=d2491b7f4fdece1fa3ddaa0a18602d4894132816
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 650V; 295A; 1.2kW; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; XPT™
Power dissipation: 1.2kW
Case: SMPD
Mounting: SMD
Gate charge: 553nC
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 295A
Pulsed collector current: 1.2kA
Turn-off time: 346ns
Turn-on time: 119ns
Produkt ist nicht verfügbar
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IXFP18N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE99097BF3E60CAD8BF&compId=IXF_18N65X2.pdf?ci_sign=ca3bb5a7d1dc01179cd59a86ff8db7c31cd310ae
IXFP18N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
Produkt ist nicht verfügbar
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IXFP18N65X2M pVersion=0046&contRep=ZT&docId=005056AB82531EE99097D394767F98BF&compId=IXFP18N65X2M.pdf?ci_sign=8bb4700710f80bf16b6ec7153d238ece41bb708b
IXFP18N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
Produkt ist nicht verfügbar
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IXFA18N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE99097BF3E60CAD8BF&compId=IXF_18N65X2.pdf?ci_sign=ca3bb5a7d1dc01179cd59a86ff8db7c31cd310ae
IXFA18N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
Produkt ist nicht verfügbar
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IXFH18N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE99097BF3E60CAD8BF&compId=IXF_18N65X2.pdf?ci_sign=ca3bb5a7d1dc01179cd59a86ff8db7c31cd310ae
IXFH18N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
Produkt ist nicht verfügbar
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VBE17-06NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86EB95AF8C9A00C4&compId=VBE17-06NO7.pdf?ci_sign=a8393222091d5a54bd260b4883ffeacf5c883410
VBE17-06NO7
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 27A; Ifsm: 45A; THT
Case: ECO-PAC 1
Electrical mounting: THT
Technology: FRED
Mechanical mounting: screw
Type of bridge rectifier: single-phase
Max. forward impulse current: 45A
Load current: 27A
Max. off-state voltage: 0.6kV
Version: module
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.06 EUR
5+14.49 EUR
6+13.7 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
MDD56-16N1B pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E06982B577DE28&compId=MDD56-16N1B-DTE.pdf?ci_sign=f249fbefd7ae5629f569d47942afd60d8d958054 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MDD56-16N1B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.19kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+30.74 EUR
15+30.56 EUR
36+29.56 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
MDD56-08N1B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB830AA8ECAC20C4&compId=MDD56-08N1B.pdf?ci_sign=42161659a37c8c1cda6b40941f4abc1696c36d66 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 800V; If: 71A; TO240AA; Ufmax: 1.14V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD56-14N1B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8311B658BFE0C4&compId=MDD56-14N1B.pdf?ci_sign=70c40e7ced289e91e572ffb0c5aeac5996b040b7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD56-18N1B pVersion=0046&contRep=ZT&docId=005056AB0ED61ED980BC786EEF238143&compId=MDD56-18N1B.pdf?ci_sign=2a69d07588eab47533278c757c686382a3bfc1ca pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFN160N30T pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF90EF782821820&compId=IXFN160N30T.pdf?ci_sign=4f514305338d34fe8741e1d339673060b3d7fe0d
IXFN160N30T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 130A
Pulsed drain current: 444A
Power dissipation: 900W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Gate charge: 376nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFK160N30T pVersion=0046&contRep=ZT&docId=005056AB82531EE98CE9C427165138BF&compId=IXF_160N30T.pdf?ci_sign=23e001151aa4a4de2e7e32da29e7d4519594f256
IXFK160N30T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFX160N30T pVersion=0046&contRep=ZT&docId=005056AB82531EE98CE9C427165138BF&compId=IXF_160N30T.pdf?ci_sign=23e001151aa4a4de2e7e32da29e7d4519594f256
IXFX160N30T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160A; 1390W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: PLUS247™
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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DLA100B1200LB-TRR DLA100B1200LB.pdf
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 124A
Max. forward impulse current: 0.4kA
Case: SMPD-B
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.23V
Produkt ist nicht verfügbar
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DSA1-18D pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82836F916CE143&compId=DSA1-18D.pdf?ci_sign=452a5902ddb9885d20bbcd189749dd424e83331a
DSA1-18D
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
Produkt ist nicht verfügbar
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MEE300-06DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Case: Y4-M6
Max. forward impulse current: 2.4kA
Semiconductor structure: double series
Max. off-state voltage: 0.6kV
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.19V
Load current: 304A
Produkt ist nicht verfügbar
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PBB150P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98000C7&compId=PBB150.pdf?ci_sign=53228664f7974af186a6902863b946cc72ea609c
PBB150P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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PBB150 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98000C7&compId=PBB150.pdf?ci_sign=53228664f7974af186a6902863b946cc72ea609c
PBB150
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBB150PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98000C7&compId=PBB150.pdf?ci_sign=53228664f7974af186a6902863b946cc72ea609c
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBB150S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98000C7&compId=PBB150.pdf?ci_sign=53228664f7974af186a6902863b946cc72ea609c
PBB150S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBB150STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98000C7&compId=PBB150.pdf?ci_sign=53228664f7974af186a6902863b946cc72ea609c
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSP25-16A media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet
DSP25-16A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: double series
Case: TO247-3
Max. forward voltage: 1.23V
Max. forward impulse current: 0.3kA
Power dissipation: 160W
Kind of package: tube
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.69 EUR
15+4.8 EUR
16+4.55 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
DSP25-12A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEEC87D9A344143&compId=DSP25-12A.pdf?ci_sign=9b32012fa217f3b41cdd73f28c4975da5fe89caa
DSP25-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Mounting: THT
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.16V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Type of diode: rectifying
auf Bestellung 263 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.59 EUR
15+4.8 EUR
16+4.55 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
DSP25-16AR media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet
DSP25-16AR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 28Ax2; tube; Ifsm: 300A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 28A x2
Semiconductor structure: double series
Case: ISOPLUS247™
Max. forward voltage: 1.23V
Max. forward impulse current: 0.3kA
Power dissipation: 100W
Kind of package: tube
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.81 EUR
8+9.21 EUR
10+9.14 EUR
Mindestbestellmenge: 7
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DSP25-12AT-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC49AB384BDC0C4&compId=DSP25-12AT.pdf?ci_sign=0302a724ac37173f94b33d568f44736a7744ea9e
DSP25-12AT-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.16V
Load current: 25A
Semiconductor structure: double series
Max. forward impulse current: 0.3kA
Power dissipation: 160W
Type of diode: rectifying
Mounting: SMD
Case: D3PAK
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.7 EUR
11+6.58 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
DSP25-16AT-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC498C99CFDA0C4&compId=DSP25-16AT.pdf?ci_sign=0b5fa43321000384158f4db8f203a913258a48d6
DSP25-16AT-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: double series
Case: D3PAK
Max. forward voltage: 1.16V
Max. forward impulse current: 0.3kA
Power dissipation: 160W
Produkt ist nicht verfügbar
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DCG160X650NA
DCG160X650NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 650V; 80Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Electrical mounting: screw
Technology: SiC
Max. forward voltage: 1.35V
Load current: 80A x2
Max. off-state voltage: 650V
Case: SOT227B
Produkt ist nicht verfügbar
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DSEC30-06A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEF0F660419E143&compId=DSEC30-06A.pdf?ci_sign=c8a59cda1c2c33fe8c2416df720e7457f27646d2
DSEC30-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 110A; TO247-3; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: TO247-3
Max. forward voltage: 1.57V
Power dissipation: 95W
Reverse recovery time: 35ns
Technology: HiPerFRED™
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.93 EUR
18+4.19 EUR
19+3.82 EUR
Mindestbestellmenge: 13
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DSEC30-06B media?resourcetype=datasheets&itemid=afd19e64-74f8-4ee9-aa71-195aeedffb06&filename=Littelfuse-Power-Semiconductors-DSEC30-06B-Datasheet
DSEC30-06B
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 110A; TO247-3; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: TO247-3
Max. forward voltage: 2.03V
Power dissipation: 95W
Reverse recovery time: 35ns
Technology: HiPerFRED™
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.86 EUR
17+4.25 EUR
19+3.86 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
DSEC30-12A description media?resourcetype=datasheets&itemid=449d027a-83b1-47f6-b255-dd89c85a9bad&filename=Littelfuse-Power-Semiconductors-DSEC30-12A-Datasheet
DSEC30-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15Ax2; tube; Ifsm: 90A; TO247-3; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-3
Max. forward voltage: 2.61V
Power dissipation: 95W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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VHF25-12IO7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1944179591820&compId=VHF25-ser.pdf?ci_sign=b45349266645b088e679b0569fcbdcd6528c9f31
VHF25-12IO7
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Case: ECO-PAC 1
Features of semiconductor devices: freewheelling diode
Mechanical mounting: screw
Electrical mounting: THT
Leads: wire Ø 0.75mm
Version: module
Load current: 32A
Max. forward impulse current: 180A
Max. off-state voltage: 1.2kV
Gate current: 25/50mA
Type of bridge rectifier: half-controlled
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.78 EUR
5+15.66 EUR
25+15.34 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXTT16P60P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E619805AB38BF&compId=IXT_16P60P.pdf?ci_sign=0e81182102286b9c0016837af235ac11d15c7957
IXTT16P60P
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO268
Mounting: SMD
Technology: PolarP™
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO268
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -16A
Gate charge: 92nC
Reverse recovery time: 440ns
On-state resistance: 720mΩ
Gate-source voltage: ±20V
Power dissipation: 460W
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+17.33 EUR
6+12.4 EUR
7+11.71 EUR
30+11.27 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXDD604SI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDD604SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.75 EUR
27+2.73 EUR
28+2.57 EUR
50+2.49 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXDI604PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDI604PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 1010 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.19 EUR
45+1.6 EUR
48+1.5 EUR
51+1.42 EUR
100+1.36 EUR
Mindestbestellmenge: 33
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IXFR32N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C11820&compId=IXFR32N100Q3.pdf?ci_sign=207d43adf354c4b1b1b46c20c722f96e3911f588
IXFR32N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+41.06 EUR
3+41.04 EUR
30+39.47 EUR
Mindestbestellmenge: 2
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IXTP2N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA1618BD17820&compId=IXTA(P%2CY)2N100P.pdf?ci_sign=ed9b99ae18ad9cc7de5cc0535e18145ae9cd8895
IXTP2N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 800ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXFR32N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BFB820&compId=IXFR32N100P.pdf?ci_sign=286c97be0b3093d0dac3237c4fe3344de0bb073d
IXFR32N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX32N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC1DC4FAEC1820&compId=IXFK(X)32N100P.pdf?ci_sign=d4d0595112cc0bc4e87edb1f70eff260601fd64c
IXFX32N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFN32N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA74E5CF81FB820&compId=IXFN32N100P.pdf?ci_sign=c6d0cb810ecde8e0355671243a182c74de859f98
IXFN32N100P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 27A
Pulsed drain current: 75A
Power dissipation: 690W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 225nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXFN32N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7571BA8393820&compId=IXFN32N100Q3.pdf?ci_sign=fd58e0d88c30b499af20f812a74ae8d4f3224225
IXFN32N100Q3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 28A
Pulsed drain current: 96A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 195nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXTN22N100L pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA743238E52B820&compId=IXTN22N100L.pdf?ci_sign=bd0f90a435af556a9c7a240091db1d3ed3d343fd
IXTN22N100L
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Pulsed drain current: 50A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.6Ω
Gate charge: 0.27µC
Kind of channel: enhancement
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 1µs
Technology: Linear™
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFK32N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC1DC4FAEC1820&compId=IXFK(X)32N100P.pdf?ci_sign=d4d0595112cc0bc4e87edb1f70eff260601fd64c
IXFK32N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTX22N100L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD1D9980B2F820&compId=IXTK(X)22N100L.pdf?ci_sign=0615493c1b1063422d61a154cca03734f6f66ba8
IXTX22N100L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXFK32N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A93A81055778BF&compId=IXF_32N100Q3.pdf?ci_sign=e4e37fba8c821b262a57b3694710db983ba811c8
IXFK32N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK52N100X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2894A9AD9909820&compId=IXFK(X)52N100X.pdf?ci_sign=d2feeeb089048c7914dc2f8557add2bc13006bca
IXFK52N100X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 245nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 260ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXFX32N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A93A81055778BF&compId=IXF_32N100Q3.pdf?ci_sign=e4e37fba8c821b262a57b3694710db983ba811c8
IXFX32N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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