Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFB100N50P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™ Mounting: THT Case: PLUS264™ Reverse recovery time: 200ns Drain-source voltage: 500V Drain current: 100A On-state resistance: 49mΩ Type of transistor: N-MOSFET Power dissipation: 1890W Polarisation: unipolar Kind of package: tube Gate charge: 240nC Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFB100N50Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™ Mounting: THT Case: PLUS264™ Drain-source voltage: 500V Drain current: 100A On-state resistance: 49mΩ Type of transistor: N-MOSFET Power dissipation: 1.56kW Polarisation: unipolar Kind of package: tube Gate charge: 255nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFH20N80P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 20A Power dissipation: 500W Case: TO247-3 On-state resistance: 0.52Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFR20N80P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 160W Case: ISOPLUS247™ On-state resistance: 570mΩ Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1977J | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 100mA Max. operating current: 1.25A Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 1Ω Mounting: THT Case: i4-pac Operating temperature: -40...85°C Body dimensions: 19.91x20.88x5.03mm Insulation voltage: 2.5kV Turn-on time: 20ms Turn-off time: 5ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXKR25N80C | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™ Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 25A Power dissipation: 250W Case: ISOPLUS247™ Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 180nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IXKC25N80C | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 25A Case: ISOPLUS220™ Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 550ns Gate charge: 180nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IXFQ22N60P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 500W Case: TO3P On-state resistance: 390mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTQ22N60P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 400W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MEA75-12DA | IXYS |
![]() ![]() Description: Module: diode; common anode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V Case: TO240AA Semiconductor structure: common anode Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode Max. off-state voltage: 1.2kV Max. forward voltage: 1.85V Load current: 75A Max. forward impulse current: 1.2kA |
auf Bestellung 62 Stücke: Lieferzeit 14-21 Tag (e) |
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MCB20P1200LB-TUB | IXYS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B Semiconductor structure: double series Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Technology: SiC Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 62nC On-state resistance: 98mΩ Drain current: 25.5A Case: SMPD-B Drain-source voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
MCB20P1200LB-TRR | IXYS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B Semiconductor structure: double series Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Technology: SiC Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 62nC On-state resistance: 98mΩ Drain current: 25.5A Case: SMPD-B Drain-source voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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PAA150 | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS On-state resistance: 7Ω Turn-on time: 2.5ms Turn-off time: 0.5ms Body dimensions: 9.65x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Case: DIP8 Contacts configuration: SPST-NO x2 Max. operating current: 250mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Mounting: THT Control current max.: 50mA Manufacturer series: OptoMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PAA150S | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS On-state resistance: 7Ω Turn-on time: 2.5ms Turn-off time: 0.5ms Body dimensions: 9.65x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Case: DIP8 Contacts configuration: SPST-NO x2 Max. operating current: 250mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Mounting: SMT Control current max.: 50mA Manufacturer series: OptoMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PAA150P | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS On-state resistance: 7Ω Turn-on time: 2.5ms Turn-off time: 0.5ms Body dimensions: 9.65x6.35x2.16mm Kind of output: MOSFET Insulation voltage: 3.75kV Case: DIP8 Contacts configuration: SPST-NO x2 Max. operating current: 250mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Mounting: SMT Control current max.: 50mA Manufacturer series: OptoMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
PAA150PTR | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS On-state resistance: 7Ω Turn-on time: 2.5ms Turn-off time: 0.5ms Body dimensions: 9.65x6.35x2.16mm Kind of output: MOSFET Insulation voltage: 3.75kV Case: DIP8 Contacts configuration: SPST-NO x2 Max. operating current: 250mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Mounting: SMT Control current max.: 50mA Manufacturer series: OptoMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
PAA150STR | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS On-state resistance: 7Ω Turn-on time: 2.5ms Turn-off time: 0.5ms Body dimensions: 9.65x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Case: DIP8 Contacts configuration: SPST-NO x2 Max. operating current: 250mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Mounting: SMT Control current max.: 50mA Manufacturer series: OptoMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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DSB30C45HB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO247-3; Ufmax: 0.54V Max. off-state voltage: 45V Max. forward voltage: 0.54V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 340A Power dissipation: 70W Kind of package: tube Type of diode: Schottky rectifying Mounting: THT Case: TO247-3 |
auf Bestellung 274 Stücke: Lieferzeit 14-21 Tag (e) |
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DSB30C60PB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.64V Max. off-state voltage: 60V Max. forward voltage: 0.64V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 340A Power dissipation: 70W Kind of package: tube Type of diode: Schottky rectifying Heatsink thickness: 1.14...1.39mm Mounting: THT Case: TO220AB |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEE55-24N1F | IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 800A; Ufmax: 1.56V Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ Mounting: THT Case: ISOPLUS i4-pac™ x024b Max. off-state voltage: 1.2kV Max. forward voltage: 1.56V Load current: 60A Semiconductor structure: double series Reverse recovery time: 85ns Max. forward impulse current: 0.8kA Power dissipation: 250W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MDD95-16N1B | IXYS |
![]() ![]() ![]() Description: Module: diode; double series; 1.6kV; If: 120A; TO240AA; Ufmax: 1.13V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 120A Case: TO240AA Max. forward voltage: 1.13V Max. forward impulse current: 2.38kA Electrical mounting: screw Mechanical mounting: screw Max. load current: 180A |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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DH2x61-18A | IXYS |
![]() Description: Module: diode; double independent; 1.8kV; If: 60Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1.8kV Load current: 60A x2 Case: SOT227B Max. forward voltage: 2.71V Max. forward impulse current: 700A Electrical mounting: screw Mechanical mounting: screw Technology: Sonic FRD™ |
auf Bestellung 225 Stücke: Lieferzeit 14-21 Tag (e) |
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DSI2X55-12A | IXYS |
![]() ![]() Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 60A x2 Case: SOT227B Max. forward voltage: 1.22V Max. forward impulse current: 0.8kA Electrical mounting: screw Mechanical mounting: screw |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP76P10T | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; 70ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -76A Power dissipation: 298W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 25mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 70ns |
auf Bestellung 313 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP76N25T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO220AB; 148ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 76A Power dissipation: 460W Case: TO220AB On-state resistance: 44mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 148ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
MIXA61WB1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™ Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 190A Case: E3-Pack Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: XPT™ |
Produkt ist nicht verfügbar |
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DSEP30-12A | IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 200A Case: TO247-2 Max. forward voltage: 1.79V Power dissipation: 165W Reverse recovery time: 40ns Technology: HiPerFRED™ |
auf Bestellung 296 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEP30-12AR | IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; ISOPLUS247™ Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 200A Case: ISOPLUS247™ Max. forward voltage: 1.79V Power dissipation: 135W Reverse recovery time: 40ns Technology: HiPerFRED™ |
auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTQ22N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Power dissipation: 350W Case: TO3P On-state resistance: 0.27Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
auf Bestellung 97 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH22N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Power dissipation: 350W Case: TO247-3 On-state resistance: 0.27Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 226 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH52N50P2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 52A Power dissipation: 960W Case: TO247-3 On-state resistance: 0.12Ω Mounting: THT Gate charge: 113nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 283 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTB62N50L | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 800W Case: PLUS264™ Mounting: THT Kind of package: tube On-state resistance: 0.1Ω Features of semiconductor devices: linear power mosfet Gate charge: 550nC Kind of channel: enhancement Reverse recovery time: 0.5µs Drain-source voltage: 500V Drain current: 62A |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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MMIX1F132N50P3 | IXYS |
![]() Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 520W Case: SMPD Mounting: SMD On-state resistance: 43mΩ Gate charge: 267nC Technology: HiPerFET™; Polar3™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 330A Reverse recovery time: 250ns Drain-source voltage: 500V Drain current: 63A |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH42N50P2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 830W Case: TO247-3 Mounting: THT Kind of package: tube On-state resistance: 0.145Ω Gate charge: 92nC Kind of channel: enhancement Drain-source voltage: 500V Drain current: 42A |
Produkt ist nicht verfügbar |
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IXTH22N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Power dissipation: 350W Case: TO247-3 On-state resistance: 0.27Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTP02N50D | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 25W Case: TO220AB Mounting: THT Kind of package: tube On-state resistance: 30Ω Gate charge: 0.12µC Kind of channel: depletion Reverse recovery time: 5ns Drain-source voltage: 500V Drain current: 0.2A |
Produkt ist nicht verfügbar |
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LCA110 | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms |
auf Bestellung 273 Stücke: Lieferzeit 14-21 Tag (e) |
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LCA110S | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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LCA110LS | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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LCA110L | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
LCA110LSTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
LCA110STR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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CLA80E1200HF | IXYS |
![]() Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube Max. off-state voltage: 1.2kV Load current: 80A Case: PLUS247™ Mounting: THT Max. load current: 126A Max. forward impulse current: 765A Kind of package: tube Type of thyristor: thyristor Gate current: 38mA |
auf Bestellung 246 Stücke: Lieferzeit 14-21 Tag (e) |
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LCA712 | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC Mounting: THT Case: DIP6 On-state resistance: 0.5Ω Turn-on time: 2.5ms Turn-off time: 350µs Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO Max. operating current: 1A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Control current max.: 50mA Manufacturer series: OptoMOS Operating temperature: -40...85°C |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK120N30P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264 Case: TO264 Mounting: THT Type of transistor: N-MOSFET Power dissipation: 1.13kW Polarisation: unipolar Kind of package: tube Gate charge: 150nC Kind of channel: enhancement Drain-source voltage: 300V Drain current: 120A On-state resistance: 27mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXGH120N30B3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3 Case: TO247-3 Mounting: THT Type of transistor: IGBT Power dissipation: 540W Kind of package: tube Gate charge: 225nC Technology: GenX3™; PT Collector-emitter voltage: 300V Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 480A Turn-on time: 51ns Turn-off time: 356ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXGH120N30C3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3 Case: TO247-3 Mounting: THT Type of transistor: IGBT Power dissipation: 540W Kind of package: tube Gate charge: 230nC Technology: GenX3™; PT Collector-emitter voltage: 300V Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 600A Turn-on time: 66ns Turn-off time: 233ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFX120N30P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; PLUS247™ Case: PLUS247™ Mounting: THT Type of transistor: N-MOSFET Power dissipation: 1.13kW Polarisation: unipolar Kind of package: tube Gate charge: 150nC Kind of channel: enhancement Drain-source voltage: 300V Drain current: 120A On-state resistance: 27mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFX120N30T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™ Case: PLUS247™ Mounting: THT Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 265nC Kind of channel: enhancement Drain-source voltage: 300V Drain current: 120A On-state resistance: 24mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
MDMA210P1600YD | IXYS |
![]() ![]() Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 210A Case: Y4-M6 Max. forward voltage: 1.04V Max. forward impulse current: 6.6kA Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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CPC1718J | IXYS |
![]() Description: Relay: solid state; 8500mA; max.100VDC; THT; ISOPLUS264™; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 100mA Max. operating current: 8.5A Switched voltage: max. 100V DC Manufacturer series: OptoMOS Relay variant: current source On-state resistance: 75mΩ Mounting: THT Case: ISOPLUS264™ Operating temperature: -40...85°C Body dimensions: 19.91x26.16x5.03mm Insulation voltage: 2.5kV Turn-on time: 20ms Turn-off time: 5ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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LCA701S | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1500mA; max.100VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 1.5A Switched voltage: max. 100V AC; max. 100V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 0.3Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 4ms Turn-off time: 1ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CPC1918J | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 100mA Max. operating current: 5250mA Switched voltage: max. 100V AC; max. 100V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 0.1Ω Mounting: THT Case: ISOPLUS264™ Operating temperature: -40...85°C Body dimensions: 19.91x26.16x5.03mm Insulation voltage: 2.5kV Turn-on time: 25ms Turn-off time: 10ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CPC1125NTR | IXYS |
![]() Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 2ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CPC1225N | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC Type of relay: solid state Max. operating current: 120mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Mounting: SMT Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Case: SOP4 On-state resistance: 30Ω Turn-on time: 2ms Turn-off time: 1ms Insulation voltage: 1.5kV Contacts configuration: SPST-NO Control current max.: 50mA |
auf Bestellung 128 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1225NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC Type of relay: solid state Max. operating current: 120mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Mounting: SMT Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Case: SOP4 On-state resistance: 30Ω Turn-on time: 2ms Turn-off time: 1ms Insulation voltage: 1.5kV Contacts configuration: SPST-NO Control current max.: 50mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PLA194 | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 3ms Turn-off time: 2ms |
auf Bestellung 248 Stücke: Lieferzeit 14-21 Tag (e) |
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PLA194STR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 3ms Turn-off time: 2ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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PLA192E | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 5ms Turn-off time: 5ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFH220N20X3 | IXYS |
![]() ![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO247-3 Case: TO247-3 Mounting: THT Reverse recovery time: 116ns Drain-source voltage: 200V Drain current: 220A On-state resistance: 6.2mΩ Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Kind of package: tube Gate charge: 204nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IXFB100N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Mounting: THT
Case: PLUS264™
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 100A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Power dissipation: 1890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 240nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Mounting: THT
Case: PLUS264™
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 100A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Power dissipation: 1890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 240nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFB100N50Q3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
Mounting: THT
Case: PLUS264™
Drain-source voltage: 500V
Drain current: 100A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 255nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
Mounting: THT
Case: PLUS264™
Drain-source voltage: 500V
Drain current: 100A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 255nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFH20N80P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.78 EUR |
8+ | 9.17 EUR |
9+ | 8.67 EUR |
IXFR20N80P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 160W
Case: ISOPLUS247™
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 160W
Case: ISOPLUS247™
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.01 EUR |
8+ | 9.41 EUR |
9+ | 8.91 EUR |
30+ | 8.57 EUR |
CPC1977J |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1.25A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1.25A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXKR25N80C |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Power dissipation: 250W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Power dissipation: 250W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXKC25N80C |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 550ns
Gate charge: 180nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 550ns
Gate charge: 180nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFQ22N60P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO3P
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO3P
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ22N60P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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MEA75-12DA |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Case: TO240AA
Semiconductor structure: common anode
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.85V
Load current: 75A
Max. forward impulse current: 1.2kA
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Case: TO240AA
Semiconductor structure: common anode
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.85V
Load current: 75A
Max. forward impulse current: 1.2kA
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 32.86 EUR |
MCB20P1200LB-TUB |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Semiconductor structure: double series
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 62nC
On-state resistance: 98mΩ
Drain current: 25.5A
Case: SMPD-B
Drain-source voltage: 1.2kV
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Semiconductor structure: double series
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 62nC
On-state resistance: 98mΩ
Drain current: 25.5A
Case: SMPD-B
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCB20P1200LB-TRR |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Semiconductor structure: double series
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 62nC
On-state resistance: 98mΩ
Drain current: 25.5A
Case: SMPD-B
Drain-source voltage: 1.2kV
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Semiconductor structure: double series
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 62nC
On-state resistance: 98mΩ
Drain current: 25.5A
Case: SMPD-B
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PAA150 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Mounting: THT
Control current max.: 50mA
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Mounting: THT
Control current max.: 50mA
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PAA150S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Mounting: SMT
Control current max.: 50mA
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Mounting: SMT
Control current max.: 50mA
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
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PAA150P |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Mounting: SMT
Control current max.: 50mA
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Mounting: SMT
Control current max.: 50mA
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
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PAA150PTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Mounting: SMT
Control current max.: 50mA
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Mounting: SMT
Control current max.: 50mA
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PAA150STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Mounting: SMT
Control current max.: 50mA
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Mounting: SMT
Control current max.: 50mA
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DSB30C45HB |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO247-3; Ufmax: 0.54V
Max. off-state voltage: 45V
Max. forward voltage: 0.54V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO247-3; Ufmax: 0.54V
Max. off-state voltage: 45V
Max. forward voltage: 0.54V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO247-3
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.23 EUR |
60+ | 1.2 EUR |
63+ | 1.14 EUR |
66+ | 1.09 EUR |
120+ | 1.06 EUR |
DSB30C60PB |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.64V
Max. off-state voltage: 60V
Max. forward voltage: 0.64V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.64V
Max. off-state voltage: 60V
Max. forward voltage: 0.64V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.63 EUR |
49+ | 1.47 EUR |
55+ | 1.3 EUR |
56+ | 1.29 EUR |
59+ | 1.22 EUR |
61+ | 1.17 EUR |
DSEE55-24N1F |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 800A; Ufmax: 1.56V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
Case: ISOPLUS i4-pac™ x024b
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.56V
Load current: 60A
Semiconductor structure: double series
Reverse recovery time: 85ns
Max. forward impulse current: 0.8kA
Power dissipation: 250W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 800A; Ufmax: 1.56V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
Case: ISOPLUS i4-pac™ x024b
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.56V
Load current: 60A
Semiconductor structure: double series
Reverse recovery time: 85ns
Max. forward impulse current: 0.8kA
Power dissipation: 250W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MDD95-16N1B |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 120A; TO240AA; Ufmax: 1.13V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 120A
Case: TO240AA
Max. forward voltage: 1.13V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 180A
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 120A; TO240AA; Ufmax: 1.13V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 120A
Case: TO240AA
Max. forward voltage: 1.13V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 180A
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 40.6 EUR |
36+ | 39.94 EUR |
DH2x61-18A |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.8kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 2.71V
Max. forward impulse current: 700A
Electrical mounting: screw
Mechanical mounting: screw
Technology: Sonic FRD™
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.8kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 2.71V
Max. forward impulse current: 700A
Electrical mounting: screw
Mechanical mounting: screw
Technology: Sonic FRD™
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 38.7 EUR |
3+ | 38.31 EUR |
10+ | 37.21 EUR |
DSI2X55-12A | ![]() |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.22V
Max. forward impulse current: 0.8kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.22V
Max. forward impulse current: 0.8kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 24.37 EUR |
10+ | 23.42 EUR |
IXTP76P10T |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
auf Bestellung 313 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.21 EUR |
15+ | 5 EUR |
16+ | 4.73 EUR |
IXTP76N25T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO220AB; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO220AB
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO220AB; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO220AB
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MIXA61WB1200TEH |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 190A
Case: E3-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: XPT™
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 190A
Case: E3-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: XPT™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DSEP30-12A |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 1.79V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 1.79V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.65 EUR |
16+ | 4.62 EUR |
17+ | 4.38 EUR |
270+ | 4.23 EUR |
DSEP30-12AR |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: ISOPLUS247™
Max. forward voltage: 1.79V
Power dissipation: 135W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: ISOPLUS247™
Max. forward voltage: 1.79V
Power dissipation: 135W
Reverse recovery time: 40ns
Technology: HiPerFRED™
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.21 EUR |
11+ | 6.59 EUR |
120+ | 6.48 EUR |
IXTQ22N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.15 EUR |
16+ | 4.52 EUR |
17+ | 4.26 EUR |
IXFH22N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 226 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.42 EUR |
13+ | 5.52 EUR |
14+ | 5.22 EUR |
120+ | 5.02 EUR |
IXFH52N50P2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 52A
Power dissipation: 960W
Case: TO247-3
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 52A
Power dissipation: 960W
Case: TO247-3
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 283 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 14.04 EUR |
7+ | 10.58 EUR |
8+ | 10 EUR |
IXTB62N50L |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 800W
Case: PLUS264™
Mounting: THT
Kind of package: tube
On-state resistance: 0.1Ω
Features of semiconductor devices: linear power mosfet
Gate charge: 550nC
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 62A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 800W
Case: PLUS264™
Mounting: THT
Kind of package: tube
On-state resistance: 0.1Ω
Features of semiconductor devices: linear power mosfet
Gate charge: 550nC
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 62A
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 39.3 EUR |
MMIX1F132N50P3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 520W
Case: SMPD
Mounting: SMD
On-state resistance: 43mΩ
Gate charge: 267nC
Technology: HiPerFET™; Polar3™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 330A
Reverse recovery time: 250ns
Drain-source voltage: 500V
Drain current: 63A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 520W
Case: SMPD
Mounting: SMD
On-state resistance: 43mΩ
Gate charge: 267nC
Technology: HiPerFET™; Polar3™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 330A
Reverse recovery time: 250ns
Drain-source voltage: 500V
Drain current: 63A
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 48.18 EUR |
10+ | 46.33 EUR |
IXFH42N50P2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 830W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 0.145Ω
Gate charge: 92nC
Kind of channel: enhancement
Drain-source voltage: 500V
Drain current: 42A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 830W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 0.145Ω
Gate charge: 92nC
Kind of channel: enhancement
Drain-source voltage: 500V
Drain current: 42A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTH22N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTP02N50D |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Kind of package: tube
On-state resistance: 30Ω
Gate charge: 0.12µC
Kind of channel: depletion
Reverse recovery time: 5ns
Drain-source voltage: 500V
Drain current: 0.2A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Kind of package: tube
On-state resistance: 30Ω
Gate charge: 0.12µC
Kind of channel: depletion
Reverse recovery time: 5ns
Drain-source voltage: 500V
Drain current: 0.2A
Produkt ist nicht verfügbar
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LCA110 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
auf Bestellung 273 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.57 EUR |
37+ | 1.94 EUR |
39+ | 1.84 EUR |
50+ | 1.82 EUR |
250+ | 1.77 EUR |
LCA110S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.89 EUR |
37+ | 1.94 EUR |
39+ | 1.84 EUR |
LCA110LS |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
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LCA110L |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
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LCA110LSTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
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LCA110STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
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CLA80E1200HF |
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Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Max. off-state voltage: 1.2kV
Load current: 80A
Case: PLUS247™
Mounting: THT
Max. load current: 126A
Max. forward impulse current: 765A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 38mA
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Max. off-state voltage: 1.2kV
Load current: 80A
Case: PLUS247™
Mounting: THT
Max. load current: 126A
Max. forward impulse current: 765A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 38mA
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.84 EUR |
9+ | 8.12 EUR |
10+ | 7.81 EUR |
LCA712 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Mounting: THT
Case: DIP6
On-state resistance: 0.5Ω
Turn-on time: 2.5ms
Turn-off time: 350µs
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Mounting: THT
Case: DIP6
On-state resistance: 0.5Ω
Turn-on time: 2.5ms
Turn-off time: 350µs
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 23.84 EUR |
IXFK120N30P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 1.13kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 150nC
Kind of channel: enhancement
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 27mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 1.13kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 150nC
Kind of channel: enhancement
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 27mΩ
Produkt ist nicht verfügbar
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IXGH120N30B3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Case: TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 540W
Kind of package: tube
Gate charge: 225nC
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 480A
Turn-on time: 51ns
Turn-off time: 356ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Case: TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 540W
Kind of package: tube
Gate charge: 225nC
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 480A
Turn-on time: 51ns
Turn-off time: 356ns
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IXGH120N30C3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Case: TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 540W
Kind of package: tube
Gate charge: 230nC
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 600A
Turn-on time: 66ns
Turn-off time: 233ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Case: TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 540W
Kind of package: tube
Gate charge: 230nC
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 600A
Turn-on time: 66ns
Turn-off time: 233ns
Produkt ist nicht verfügbar
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IXFX120N30P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; PLUS247™
Case: PLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 1.13kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 150nC
Kind of channel: enhancement
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 27mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; PLUS247™
Case: PLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 1.13kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 150nC
Kind of channel: enhancement
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 27mΩ
Produkt ist nicht verfügbar
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IXFX120N30T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™
Case: PLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhancement
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 24mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™
Case: PLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhancement
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 24mΩ
Produkt ist nicht verfügbar
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MDMA210P1600YD |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 210A
Case: Y4-M6
Max. forward voltage: 1.04V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 210A
Case: Y4-M6
Max. forward voltage: 1.04V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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CPC1718J |
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Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 8500mA; max.100VDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 8.5A
Switched voltage: max. 100V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 75mΩ
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: DC Solid State Relays
Description: Relay: solid state; 8500mA; max.100VDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 8.5A
Switched voltage: max. 100V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 75mΩ
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
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LCA701S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1500mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.5A
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 1ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1500mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.5A
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 1ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1918J |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 5250mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.1Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 25ms
Turn-off time: 10ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 5250mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.1Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 25ms
Turn-off time: 10ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1125NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Produkt ist nicht verfügbar
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CPC1225N |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Case: SOP4
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 1ms
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Case: SOP4
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 1ms
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Control current max.: 50mA
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.06 EUR |
40+ | 1.79 EUR |
44+ | 1.66 EUR |
46+ | 1.57 EUR |
100+ | 1.52 EUR |
CPC1225NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Case: SOP4
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 1ms
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Case: SOP4
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 1ms
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Control current max.: 50mA
Produkt ist nicht verfügbar
Im Einkaufswagen
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PLA194 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 2ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 2ms
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.58 EUR |
23+ | 3.17 EUR |
24+ | 3 EUR |
PLA194STR |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 2ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 2ms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PLA192E |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFH220N20X3 |
![]() ![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO247-3
Case: TO247-3
Mounting: THT
Reverse recovery time: 116ns
Drain-source voltage: 200V
Drain current: 220A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO247-3
Case: TO247-3
Mounting: THT
Reverse recovery time: 116ns
Drain-source voltage: 200V
Drain current: 220A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH