Foto | Bezeichnung | Hersteller | Beschreibung |
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VMM300-03F | IXYS |
![]() Description: Module; transistor/transistor; 300V; 220A; Y3-DCB; Idm: 1.16kA Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 300V Drain current: 220A Case: Y3-DCB Topology: MOSFET half-bridge Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 7.4mΩ Pulsed drain current: 1.16kA Power dissipation: 1.5kW Technology: HiPerFET™ Gate-source voltage: ±20V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXXH80N65B4 | IXYS |
![]() Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 625W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 430A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 125ns Turn-off time: 222ns |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGK100N170 | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264 Mounting: THT Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 600A Turn-on time: 285ns Turn-off time: 720ns Type of transistor: IGBT Power dissipation: 830W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 425nC Technology: NPT Case: TO264 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXA12IF1200HB | IXYS |
![]() Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3 Collector current: 13A Case: TO247-3 Technology: Planar; Sonic FRD™; XPT™ Power dissipation: 85W Kind of package: tube Gate charge: 27nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 30A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
auf Bestellung 268 Stücke: Lieferzeit 14-21 Tag (e) |
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IXA37IF1200HJ | IXYS |
![]() Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™ Collector current: 37A Case: PLUS247™ Technology: Planar; Sonic FRD™; XPT™ Power dissipation: 195W Kind of package: tube Gate charge: 106nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 105A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) |
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IXA4I1200UC-TRL | IXYS |
![]() Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252 Collector current: 9A Case: TO252 Technology: XPT™ Power dissipation: 45W Gate charge: 12nC Mounting: SMD Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 9A Turn-on time: 70ns Turn-off time: 250ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXA12IF1200PB | IXYS |
![]() Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO220-3 Collector current: 13A Case: TO220-3 Technology: Planar; Sonic FRD™; XPT™ Power dissipation: 85W Kind of package: tube Gate charge: 27nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 30A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ITF48IF1200HR | IXYS |
![]() Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™ Collector current: 48A Case: ISO247™ Technology: Trench; XPT™ Power dissipation: 390W Kind of package: tube Gate charge: 175nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 160A Turn-on time: 52ns Turn-off time: 460ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXA27IF1200HJ | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 27A; 150W; PLUS247™ Collector current: 27A Case: PLUS247™ Technology: GenX3™; Planar; Sonic FRD™; XPT™ Power dissipation: 150W Kind of package: tube Gate charge: 76nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 75A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXA20IF1200HB | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO247-3 Collector current: 22A Case: TO247-3 Technology: GenX3™; Planar; Sonic FRD™; XPT™ Power dissipation: 165W Kind of package: tube Gate charge: 47nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 45A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXA20I1200PB | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3 Collector current: 22A Case: TO220-3 Technology: GenX3™; Planar; Sonic FRD™; XPT™ Power dissipation: 165W Kind of package: tube Gate charge: 47nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 45A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXA17IF1200HJ | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 18A; 100W; PLUS247™ Collector current: 18A Case: PLUS247™ Technology: GenX3™; Planar; Sonic FRD™; XPT™ Power dissipation: 100W Kind of package: tube Gate charge: 47nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 45A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXA45IF1200HB | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 45A; 325W; TO247-3 Collector current: 45A Case: TO247-3 Technology: GenX3™; Planar; XPT™ Power dissipation: 325W Kind of package: tube Gate charge: 106nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 105A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXA4IF1200TC | IXYS |
![]() Description: Transistor: IGBT; Planar; 1.2kV; 5A; 45W; TO268 Collector current: 5A Case: TO268 Technology: Planar; Sonic FRD™; XPT™ Power dissipation: 45W Kind of package: tube Gate charge: 12nC Mounting: SMD Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 9A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXA55I1200HJ | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 54A; 290W; PLUS247™ Collector current: 54A Case: PLUS247™ Technology: GenX3™; Planar; XPT™ Power dissipation: 290W Kind of package: tube Gate charge: 0.19µC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 150A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
MIXA61H1200ED | IXYS |
![]() Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Collector current: 60A Case: E2-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 290W Gate-emitter voltage: ±20V Pulsed collector current: 150A Application: motors; photovoltaics |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
IXG70IF1200NA | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 86A Case: SOT227B Electrical mounting: screw Technology: X2PT Mechanical mounting: screw Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MIXA10W1200TML | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 12A Case: E1-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 65W Gate-emitter voltage: ±20V Pulsed collector current: 30A Application: fans; for pump; motors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MIXA60W1200TED | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 60A Case: E2-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 290W Gate-emitter voltage: ±20V Pulsed collector current: 150A Application: motors; photovoltaics |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MIXG70W1200TED | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 79A Case: E2-Pack Electrical mounting: Press-in PCB Technology: X2PT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MIXA30W1200TED | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 30A Case: E2-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 150W Gate-emitter voltage: ±20V Pulsed collector current: 75A Application: motors; photovoltaics |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MIXA30W1200TML | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 30A Case: E1-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 150W Gate-emitter voltage: ±20V Pulsed collector current: 75A Application: fans; for pump; motors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MIXA40W1200TED | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 40A Case: E2-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 195W Gate-emitter voltage: ±20V Pulsed collector current: 105A Application: motors; photovoltaics |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MIXA41W1200ED | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge Max. off-state voltage: 1.2kV Collector current: 40A Case: E2-Pack Electrical mounting: Press-in PCB Technology: XPT™ Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MIXA80R1200VA | IXYS |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 390W Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 84A Case: V1-A-Pack Electrical mounting: FASTON connectors Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 390W Gate-emitter voltage: ±20V Pulsed collector current: 225A Application: fans; for pump; motors; photovoltaics |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MIXA80W1200PTEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 84A Case: E3-Pack Electrical mounting: Press-in PCB Technology: XPT™ Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MIXA80W1200TED | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 84A Case: E2-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 390W Gate-emitter voltage: ±20V Pulsed collector current: 225A Application: motors; photovoltaics |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MIXA81H1200EH | IXYS |
![]() Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Collector current: 84A Case: E3-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 390W Gate-emitter voltage: ±20V Pulsed collector current: 225A Application: motors; photovoltaics |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MIXA20W1200TML | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 20A Case: E1-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 100W Gate-emitter voltage: ±20V Pulsed collector current: 45A Application: fans; for pump; motors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MIXA40W1200TML | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 40A Case: E1-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 195W Gate-emitter voltage: ±20V Pulsed collector current: 105A Application: fans; for pump; motors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MIXA80W1200TEH | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 84A Case: E3-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 390W Gate-emitter voltage: ±20V Pulsed collector current: 225A Application: motors; photovoltaics |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXGN72N60C3H1 | IXYS |
![]() Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W Power dissipation: 360W Case: SOT227B Type of semiconductor module: IGBT Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 52A Pulsed collector current: 360A Electrical mounting: screw Mechanical mounting: screw Technology: GenX3™; PT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXGX72N60C3H1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™ Type of transistor: IGBT Power dissipation: 540W Case: PLUS247™ Mounting: THT Gate charge: 174nC Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 72A Pulsed collector current: 360A Turn-on time: 62ns Turn-off time: 244ns Technology: GenX3™; PT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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MCC310-16io1 | IXYS |
![]() Description: Module: thyristor; double series; 1.6kV; 320A; Y2-DCB; Ufmax: 1.32V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 320A Case: Y2-DCB Max. forward voltage: 1.32V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw Max. forward impulse current: 9.8kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
MCC310-18io1 | IXYS |
![]() Description: Module: thyristor; double series; 1.8kV; 320A; Y2; Ufmax: 1.32V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 320A Case: Y2 Max. forward voltage: 1.32V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MCC310-12io1 | IXYS |
![]() Description: Module: thyristor; double series; 1.2kV; 320A; Y2; Ufmax: 1.32V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 320A Case: Y2 Max. forward voltage: 1.32V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MCC310-08io1 | IXYS |
![]() Description: Module: thyristor; double series; 800V; 320A; Y2; Ufmax: 1.32V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 320A Case: Y2 Max. forward voltage: 1.32V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
MCC310-14io1 | IXYS |
![]() Description: Module: thyristor; double series; 1.4kV; 320A; Y2; Ufmax: 1.32V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 320A Case: Y2 Max. forward voltage: 1.32V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXFN140N30P | IXYS |
![]() ![]() Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A Polarisation: unipolar Power dissipation: 700W On-state resistance: 24mΩ Drain current: 110A Drain-source voltage: 300V Reverse recovery time: 200ns Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Gate charge: 185nC Case: SOT227B Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 300A Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFK140N30P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264 Mounting: THT Polarisation: unipolar Power dissipation: 1.04kW Type of transistor: N-MOSFET On-state resistance: 24mΩ Drain current: 140A Drain-source voltage: 300V Reverse recovery time: 200ns Gate charge: 185nC Case: TO264 Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate-source voltage: ±20V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTK140N30P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264 Mounting: THT Polarisation: unipolar Power dissipation: 1.04kW Type of transistor: N-MOSFET On-state resistance: 0.24Ω Drain current: 140A Drain-source voltage: 300V Reverse recovery time: 250ns Gate charge: 185nC Case: TO264 Technology: Polar™ Kind of channel: enhancement Gate-source voltage: ±20V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFR140N30P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™ Mounting: THT Polarisation: unipolar Power dissipation: 300W Type of transistor: N-MOSFET On-state resistance: 28mΩ Drain current: 70A Drain-source voltage: 300V Gate charge: 185nC Case: ISOPLUS247™ Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFH70N20Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO247-3 Mounting: THT Case: TO247-3 Drain-source voltage: 200V Drain current: 70A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Kind of package: tube Gate charge: 67nC Kind of channel: enhancement |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK170N20T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264 Mounting: THT Case: TO264 Drain-source voltage: 200V Drain current: 170A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 1.15kW Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 265nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFK170N20P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264 Mounting: THT Case: TO264 Reverse recovery time: 200ns Drain-source voltage: 200V Drain current: 170A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Gate charge: 185nC Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFH110N25T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 110A Power dissipation: 694W Case: TO247-3 On-state resistance: 26mΩ Mounting: THT Gate charge: 157nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 256 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH110N25T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 110A Power dissipation: 694W Case: TO247-3 On-state resistance: 26mΩ Mounting: THT Gate charge: 157nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 170ns Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH110N15T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 110A Power dissipation: 480W Case: TO247-3 On-state resistance: 13mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 85ns Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 286 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA110N15T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 110A Power dissipation: 480W Case: TO263 On-state resistance: 13mΩ Mounting: SMD Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 85ns Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH110N10P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 480W Case: TO247-3 On-state resistance: 15mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Polar™ |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1726Y | IXYS |
![]() Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; OptoMOS; 0.75Ω Type of relay: solid state Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 250V DC Relay variant: current source Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Insulation voltage: 2.5kV Kind of output: MOSFET Turn-off time: 2ms Turn-on time: 5ms On-state resistance: 0.75Ω Contacts configuration: SPST-NO Manufacturer series: OptoMOS |
auf Bestellung 93 Stücke: Lieferzeit 14-21 Tag (e) |
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IXBH24N170 | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3 Turn-off time: 1285ns Type of transistor: IGBT Power dissipation: 250W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 0.14µC Technology: BiMOSFET™ Case: TO247-3 Mounting: THT Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 24A Pulsed collector current: 230A Turn-on time: 190ns |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP01N100D | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 25W Case: TO220AB Mounting: THT Kind of package: tube Reverse recovery time: 2ns Drain-source voltage: 1kV Drain current: 0.1A On-state resistance: 80Ω Gate charge: 0.1µC Kind of channel: depletion |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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CLA100E1200KB | IXYS |
![]() Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube Max. off-state voltage: 1.2kV Load current: 100A Case: TO264 Mounting: THT Max. load current: 160A Max. forward impulse current: 1.19kA Kind of package: tube Type of thyristor: thyristor Gate current: 80mA |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK230N20T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264 Drain current: 230A On-state resistance: 7.5mΩ Type of transistor: N-MOSFET Power dissipation: 1670W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 358nC Kind of channel: enhancement Mounting: THT Case: TO264 Drain-source voltage: 200V |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK180N25T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264 Drain current: 180A On-state resistance: 12.9mΩ Type of transistor: N-MOSFET Power dissipation: 1390W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 364nC Kind of channel: enhancement Mounting: THT Case: TO264 Drain-source voltage: 250V |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK88N30P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264 Drain current: 88A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 600W Polarisation: unipolar Kind of package: tube Gate charge: 180nC Kind of channel: enhancement Mounting: THT Case: TO264 Drain-source voltage: 300V |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK150N30P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264 Drain current: 150A On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 1.3kW Polarisation: unipolar Kind of package: tube Gate charge: 197nC Kind of channel: enhancement Mounting: THT Case: TO264 Drain-source voltage: 300V |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK240N25X3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; TO264; 177ns Drain current: 240A On-state resistance: 5mΩ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ultra junction x-class Gate charge: 345nC Kind of channel: enhancement Mounting: THT Case: TO264 Reverse recovery time: 177ns Drain-source voltage: 250V |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK80N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264 Drain current: 80A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Kind of package: tube Gate charge: 197nC Kind of channel: enhancement Mounting: THT Case: TO264 Drain-source voltage: 500V |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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VMM300-03F |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 300V; 220A; Y3-DCB; Idm: 1.16kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 300V
Drain current: 220A
Case: Y3-DCB
Topology: MOSFET half-bridge
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 1.16kA
Power dissipation: 1.5kW
Technology: HiPerFET™
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 300V; 220A; Y3-DCB; Idm: 1.16kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 300V
Drain current: 220A
Case: Y3-DCB
Topology: MOSFET half-bridge
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 1.16kA
Power dissipation: 1.5kW
Technology: HiPerFET™
Gate-source voltage: ±20V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXXH80N65B4 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.98 EUR |
12+ | 6.03 EUR |
IXGK100N170 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 600A
Turn-on time: 285ns
Turn-off time: 720ns
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 425nC
Technology: NPT
Case: TO264
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 600A
Turn-on time: 285ns
Turn-off time: 720ns
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 425nC
Technology: NPT
Case: TO264
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXA12IF1200HB |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Collector current: 13A
Case: TO247-3
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Collector current: 13A
Case: TO247-3
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.08 EUR |
20+ | 3.66 EUR |
21+ | 3.46 EUR |
IXA37IF1200HJ |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Collector current: 37A
Case: PLUS247™
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 195W
Kind of package: tube
Gate charge: 106nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Collector current: 37A
Case: PLUS247™
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 195W
Kind of package: tube
Gate charge: 106nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 20.28 EUR |
IXA4I1200UC-TRL |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252
Collector current: 9A
Case: TO252
Technology: XPT™
Power dissipation: 45W
Gate charge: 12nC
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Turn-on time: 70ns
Turn-off time: 250ns
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252
Collector current: 9A
Case: TO252
Technology: XPT™
Power dissipation: 45W
Gate charge: 12nC
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Turn-on time: 70ns
Turn-off time: 250ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXA12IF1200PB |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO220-3
Collector current: 13A
Case: TO220-3
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO220-3
Collector current: 13A
Case: TO220-3
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ITF48IF1200HR |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™
Collector current: 48A
Case: ISO247™
Technology: Trench; XPT™
Power dissipation: 390W
Kind of package: tube
Gate charge: 175nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 460ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™
Collector current: 48A
Case: ISO247™
Technology: Trench; XPT™
Power dissipation: 390W
Kind of package: tube
Gate charge: 175nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 460ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXA27IF1200HJ |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 27A; 150W; PLUS247™
Collector current: 27A
Case: PLUS247™
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 150W
Kind of package: tube
Gate charge: 76nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 27A; 150W; PLUS247™
Collector current: 27A
Case: PLUS247™
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 150W
Kind of package: tube
Gate charge: 76nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXA20IF1200HB |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO247-3
Collector current: 22A
Case: TO247-3
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO247-3
Collector current: 22A
Case: TO247-3
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXA20I1200PB |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Collector current: 22A
Case: TO220-3
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Collector current: 22A
Case: TO220-3
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXA17IF1200HJ |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 18A; 100W; PLUS247™
Collector current: 18A
Case: PLUS247™
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 100W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 18A; 100W; PLUS247™
Collector current: 18A
Case: PLUS247™
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 100W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXA45IF1200HB |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 45A; 325W; TO247-3
Collector current: 45A
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Power dissipation: 325W
Kind of package: tube
Gate charge: 106nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 45A; 325W; TO247-3
Collector current: 45A
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Power dissipation: 325W
Kind of package: tube
Gate charge: 106nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXA4IF1200TC |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 5A; 45W; TO268
Collector current: 5A
Case: TO268
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 45W
Kind of package: tube
Gate charge: 12nC
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 5A; 45W; TO268
Collector current: 5A
Case: TO268
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 45W
Kind of package: tube
Gate charge: 12nC
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXA55I1200HJ |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 54A; 290W; PLUS247™
Collector current: 54A
Case: PLUS247™
Technology: GenX3™; Planar; XPT™
Power dissipation: 290W
Kind of package: tube
Gate charge: 0.19µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 54A; 290W; PLUS247™
Collector current: 54A
Case: PLUS247™
Technology: GenX3™; Planar; XPT™
Power dissipation: 290W
Kind of package: tube
Gate charge: 0.19µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MIXA61H1200ED |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 290W
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Application: motors; photovoltaics
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 290W
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXG70IF1200NA |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 86A
Case: SOT227B
Electrical mounting: screw
Technology: X2PT
Mechanical mounting: screw
Features of semiconductor devices: integrated anti-parallel diode
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 86A
Case: SOT227B
Electrical mounting: screw
Technology: X2PT
Mechanical mounting: screw
Features of semiconductor devices: integrated anti-parallel diode
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MIXA10W1200TML |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 12A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 65W
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Application: fans; for pump; motors
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 12A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 65W
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Application: fans; for pump; motors
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MIXA60W1200TED |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 290W
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Application: motors; photovoltaics
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 290W
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Application: motors; photovoltaics
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MIXG70W1200TED |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 79A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 79A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
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MIXA30W1200TED |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 150W
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Application: motors; photovoltaics
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 150W
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Application: motors; photovoltaics
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MIXA30W1200TML |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 150W
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Application: fans; for pump; motors
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 150W
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Application: fans; for pump; motors
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MIXA40W1200TED |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 195W
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Application: motors; photovoltaics
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 195W
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Application: motors; photovoltaics
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MIXA41W1200ED |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
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MIXA80R1200VA |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 390W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: V1-A-Pack
Electrical mounting: FASTON connectors
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: fans; for pump; motors; photovoltaics
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 390W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: V1-A-Pack
Electrical mounting: FASTON connectors
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: fans; for pump; motors; photovoltaics
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MIXA80W1200PTEH |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
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MIXA80W1200TED |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
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MIXA81H1200EH |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
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MIXA20W1200TML |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 20A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 100W
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Application: fans; for pump; motors
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 20A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 100W
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Application: fans; for pump; motors
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MIXA40W1200TML |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 195W
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Application: fans; for pump; motors
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 195W
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Application: fans; for pump; motors
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MIXA80W1200TEH |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
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IXGN72N60C3H1 |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Power dissipation: 360W
Case: SOT227B
Type of semiconductor module: IGBT
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 52A
Pulsed collector current: 360A
Electrical mounting: screw
Mechanical mounting: screw
Technology: GenX3™; PT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Power dissipation: 360W
Case: SOT227B
Type of semiconductor module: IGBT
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 52A
Pulsed collector current: 360A
Electrical mounting: screw
Mechanical mounting: screw
Technology: GenX3™; PT
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IXGX72N60C3H1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Power dissipation: 540W
Case: PLUS247™
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 72A
Pulsed collector current: 360A
Turn-on time: 62ns
Turn-off time: 244ns
Technology: GenX3™; PT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Power dissipation: 540W
Case: PLUS247™
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 72A
Pulsed collector current: 360A
Turn-on time: 62ns
Turn-off time: 244ns
Technology: GenX3™; PT
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MCC310-16io1 |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320A; Y2-DCB; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 9.8kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320A; Y2-DCB; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 9.8kA
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MCC310-18io1 |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; Y2; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; Y2; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCC310-12io1 |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320A; Y2; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320A; Y2; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCC310-08io1 |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 320A; Y2; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 320A; Y2; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCC310-14io1 |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 320A; Y2; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 320A; Y2; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXFN140N30P | ![]() |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Polarisation: unipolar
Power dissipation: 700W
On-state resistance: 24mΩ
Drain current: 110A
Drain-source voltage: 300V
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 185nC
Case: SOT227B
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 300A
Type of semiconductor module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Polarisation: unipolar
Power dissipation: 700W
On-state resistance: 24mΩ
Drain current: 110A
Drain-source voltage: 300V
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 185nC
Case: SOT227B
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 300A
Type of semiconductor module: MOSFET transistor
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IXFK140N30P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Polarisation: unipolar
Power dissipation: 1.04kW
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Drain current: 140A
Drain-source voltage: 300V
Reverse recovery time: 200ns
Gate charge: 185nC
Case: TO264
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Polarisation: unipolar
Power dissipation: 1.04kW
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Drain current: 140A
Drain-source voltage: 300V
Reverse recovery time: 200ns
Gate charge: 185nC
Case: TO264
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Kind of package: tube
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IXTK140N30P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Polarisation: unipolar
Power dissipation: 1.04kW
Type of transistor: N-MOSFET
On-state resistance: 0.24Ω
Drain current: 140A
Drain-source voltage: 300V
Reverse recovery time: 250ns
Gate charge: 185nC
Case: TO264
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Polarisation: unipolar
Power dissipation: 1.04kW
Type of transistor: N-MOSFET
On-state resistance: 0.24Ω
Drain current: 140A
Drain-source voltage: 300V
Reverse recovery time: 250ns
Gate charge: 185nC
Case: TO264
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFR140N30P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™
Mounting: THT
Polarisation: unipolar
Power dissipation: 300W
Type of transistor: N-MOSFET
On-state resistance: 28mΩ
Drain current: 70A
Drain-source voltage: 300V
Gate charge: 185nC
Case: ISOPLUS247™
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™
Mounting: THT
Polarisation: unipolar
Power dissipation: 300W
Type of transistor: N-MOSFET
On-state resistance: 28mΩ
Drain current: 70A
Drain-source voltage: 300V
Gate charge: 185nC
Case: ISOPLUS247™
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFH70N20Q3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO247-3
Mounting: THT
Case: TO247-3
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO247-3
Mounting: THT
Case: TO247-3
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 17.88 EUR |
IXFK170N20T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264
Mounting: THT
Case: TO264
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.15kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264
Mounting: THT
Case: TO264
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.15kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFK170N20P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264
Mounting: THT
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264
Mounting: THT
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFH110N25T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 256 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.56 EUR |
9+ | 8.09 EUR |
30+ | 7.84 EUR |
120+ | 7.79 EUR |
IXTH110N25T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.65 EUR |
9+ | 8.08 EUR |
10+ | 7.64 EUR |
IXFH110N15T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.15 EUR |
10+ | 7.32 EUR |
11+ | 6.84 EUR |
30+ | 6.68 EUR |
IXFA110N15T2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO263
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO263
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.04 EUR |
15+ | 4.9 EUR |
16+ | 4.63 EUR |
IXFH110N10P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.68 EUR |
12+ | 6.19 EUR |
13+ | 5.85 EUR |
CPC1726Y |
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Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; OptoMOS; 0.75Ω
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V DC
Relay variant: current source
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Kind of output: MOSFET
Turn-off time: 2ms
Turn-on time: 5ms
On-state resistance: 0.75Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; OptoMOS; 0.75Ω
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V DC
Relay variant: current source
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Kind of output: MOSFET
Turn-off time: 2ms
Turn-on time: 5ms
On-state resistance: 0.75Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.45 EUR |
20+ | 3.6 EUR |
22+ | 3.4 EUR |
IXBH24N170 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Turn-off time: 1285ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Technology: BiMOSFET™
Case: TO247-3
Mounting: THT
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 230A
Turn-on time: 190ns
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Turn-off time: 1285ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Technology: BiMOSFET™
Case: TO247-3
Mounting: THT
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 230A
Turn-on time: 190ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
IXTP01N100D |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 2ns
Drain-source voltage: 1kV
Drain current: 0.1A
On-state resistance: 80Ω
Gate charge: 0.1µC
Kind of channel: depletion
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 2ns
Drain-source voltage: 1kV
Drain current: 0.1A
On-state resistance: 80Ω
Gate charge: 0.1µC
Kind of channel: depletion
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.17 EUR |
12+ | 6.19 EUR |
13+ | 5.85 EUR |
CLA100E1200KB |
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Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Max. off-state voltage: 1.2kV
Load current: 100A
Case: TO264
Mounting: THT
Max. load current: 160A
Max. forward impulse current: 1.19kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Max. off-state voltage: 1.2kV
Load current: 100A
Case: TO264
Mounting: THT
Max. load current: 160A
Max. forward impulse current: 1.19kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.24 EUR |
9+ | 8.38 EUR |
10+ | 7.92 EUR |
25+ | 7.74 EUR |
IXFK230N20T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Drain current: 230A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1670W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 358nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 200V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Drain current: 230A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1670W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 358nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 200V
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 24.35 EUR |
IXFK180N25T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Drain current: 180A
On-state resistance: 12.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 1390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 364nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 250V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Drain current: 180A
On-state resistance: 12.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 1390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 364nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 250V
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 18.73 EUR |
IXFK88N30P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Drain current: 88A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Kind of package: tube
Gate charge: 180nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 300V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Drain current: 88A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Kind of package: tube
Gate charge: 180nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 300V
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.3 EUR |
IXFK150N30P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Drain current: 150A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 300V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Drain current: 150A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 300V
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 20.35 EUR |
100+ | 19.56 EUR |
IXFK240N25X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; TO264; 177ns
Drain current: 240A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 345nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Reverse recovery time: 177ns
Drain-source voltage: 250V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; TO264; 177ns
Drain current: 240A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 345nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Reverse recovery time: 177ns
Drain-source voltage: 250V
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 31.69 EUR |
IXFK80N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264
Drain current: 80A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 500V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264
Drain current: 80A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 500V
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 20.49 EUR |