Foto | Bezeichnung | Hersteller | Beschreibung |
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MUBW25-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A Collector current: 21A Power dissipation: 100W Case: E1-Pack Gate-emitter voltage: ±20V Pulsed collector current: 40A Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Application: motors Electrical mounting: Press-in PCB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXFX250N10P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 250A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 6.5mΩ Mounting: THT Gate charge: 205nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DSEP60-12A | IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 0.5kA Case: TO247-2 Max. forward voltage: 1.81V Power dissipation: 330W Reverse recovery time: 40ns Technology: HiPerFRED™ |
auf Bestellung 255 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEP60-12AR | IXYS |
![]() ![]() Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™ Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 0.5kA Case: ISOPLUS247™ Max. forward voltage: 2.66V Power dissipation: 230W Reverse recovery time: 40ns Technology: HiPerFRED™ |
Produkt ist nicht verfügbar |
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IXTQ50N25T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO3P On-state resistance: 50mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 166ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXDI614CI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Case: TO220-5 Mounting: THT Kind of package: tube Number of channels: 1 Kind of output: inverting Kind of integrated circuit: gate driver; low-side Operating temperature: -40...125°C Supply voltage: 4.5...35V Turn-on time: 140ns Turn-off time: 130ns Output current: -14...14A |
auf Bestellung 773 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN609CI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -9...9A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 1092 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN630MCI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V Type of integrated circuit: driver Case: TO220-5 Mounting: THT Kind of package: tube Number of channels: 1 Kind of output: non-inverting Kind of integrated circuit: gate driver; low-side Operating temperature: -40...125°C Supply voltage: 9...35V Turn-on time: 135ns Turn-off time: 135ns Output current: -30...30A |
auf Bestellung 127 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDD630CI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Case: TO220-5 Mounting: THT Kind of package: tube Number of channels: 1 Kind of output: non-inverting Kind of integrated circuit: gate driver; low-side Operating temperature: -40...125°C Supply voltage: 12.5...35V Turn-on time: 135ns Turn-off time: 135ns Output current: -30...30A |
auf Bestellung 219 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDD614CI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -14...14A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns |
auf Bestellung 874 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDI609CI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -9...9A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 796 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDI630MCI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Case: TO220-5 Mounting: THT Kind of package: tube Number of channels: 1 Kind of output: inverting Kind of integrated circuit: gate driver; low-side Operating temperature: -40...125°C Supply voltage: 12.5...35V Turn-on time: 135ns Turn-off time: 135ns Output current: -30...30A |
auf Bestellung 209 Stücke: Lieferzeit 14-21 Tag (e) |
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LCC110P | IXYS |
![]() Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Mounting: SMT Body dimensions: 9.65x6.35x2.16mm Turn-on time: 4ms Insulation voltage: 3.75kV On-state resistance: 35Ω Contacts configuration: SPDT Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Operating temperature: -40...85°C Control current max.: 50mA Manufacturer series: OptoMOS Turn-off time: 4ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
LCC110PTR | IXYS |
![]() Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Mounting: SMT Body dimensions: 9.65x6.35x2.16mm Turn-on time: 4ms Insulation voltage: 3.75kV On-state resistance: 35Ω Contacts configuration: SPDT Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Operating temperature: -40...85°C Control current max.: 50mA Manufacturer series: OptoMOS Turn-off time: 4ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
LCC110STR | IXYS |
![]() Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Mounting: SMT Body dimensions: 9.65x6.35x3.3mm Turn-on time: 4ms Insulation voltage: 3.75kV On-state resistance: 35Ω Contacts configuration: SPDT Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Operating temperature: -40...85°C Control current max.: 50mA Manufacturer series: OptoMOS Turn-off time: 4ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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CPC1706Y | IXYS |
![]() Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; -40÷85°C Type of relay: solid state Control current max.: 50mA Max. operating current: 4A Switched voltage: max. 60V DC Relay variant: current source Mounting: THT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Insulation voltage: 2.5kV Kind of output: MOSFET Turn-off time: 2ms Turn-on time: 5ms On-state resistance: 90mΩ Contacts configuration: SPST-NO Manufacturer series: OptoMOS |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG30I400HA | IXYS |
![]() Description: Diode: rectifying; THT; 400V; 30A; tube; Ifsm: 360A; TO247-2; 160W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 360A Case: TO247-2 Max. forward voltage: 1.13V Reverse recovery time: 45ns Technology: HiPerFRED™ 2nd Gen Power dissipation: 160W |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG60C400HB | IXYS |
![]() Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W Mounting: THT Max. forward impulse current: 360A Power dissipation: 160W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Case: TO247-3 Max. off-state voltage: 0.4kV Max. forward voltage: 1.41V Load current: 30A x2 Semiconductor structure: common cathode; double Reverse recovery time: 45ns |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEI2X31-04C | IXYS |
![]() Description: Module: diode; double independent; 400V; If: 30Ax2; SOT227B; screw Max. off-state voltage: 0.4kV Load current: 30A x2 Semiconductor structure: double independent Max. forward impulse current: 0.3kA Case: SOT227B Max. forward voltage: 1.4V Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP12N50P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Gate charge: 29nC Technology: Polar™ Kind of channel: enhancement Gate-source voltage: ±30V Reverse recovery time: 300ns Drain-source voltage: 500V Drain current: 12A On-state resistance: 0.5Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFP12N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Gate charge: 29nC Kind of channel: enhancement Drain-source voltage: 500V Drain current: 12A On-state resistance: 0.5Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTA12N50P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO263 Mounting: SMD Kind of package: tube Gate charge: 29nC Technology: Polar™ Kind of channel: enhancement Gate-source voltage: ±30V Reverse recovery time: 300ns Drain-source voltage: 500V Drain current: 12A On-state resistance: 0.5Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
MIXG330PF1200PTSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: X2PT Topology: IGBT half-bridge; NTC thermistor Case: SimBus F |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
MIXG330PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: X2PT Topology: IGBT half-bridge; NTC thermistor Case: SimBus F |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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DH20-18A | IXYS |
![]() Description: Diode: rectifying; THT; 1.8kV; 20A; tube; Ifsm: 150A; TO247-2; 140W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.8kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 150A Kind of package: tube Power dissipation: 140W Features of semiconductor devices: fast switching Max. forward voltage: 2.35V Reverse recovery time: 300ns |
auf Bestellung 489 Stücke: Lieferzeit 14-21 Tag (e) |
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IX4428NTR | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Case: SO8 Supply voltage: 4.5...35V Output current: -1.5...1.5A Type of integrated circuit: driver Number of channels: 2 Kind of output: inverting; non-inverting Kind of package: reel; tape Kind of integrated circuit: low-side; MOSFET gate driver Mounting: SMD Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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LAA110L | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
LAA110P | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
LAA110LSTR | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
LAA110STR | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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LAA110LS | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
LAA110PLTR | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
LAA110PTR | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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CPC5602CTR | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.13A Power dissipation: 2.5W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion |
auf Bestellung 1256 Stücke: Lieferzeit 14-21 Tag (e) |
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VUO86-16NO7 | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A Electrical mounting: THT Leads: wire Ø 1.5mm Max. off-state voltage: 1.6kV Max. forward voltage: 1.51V Load current: 86A Max. forward impulse current: 0.55kA Mechanical mounting: screw Version: module Type of bridge rectifier: three-phase Case: ECO-PAC 1 |
auf Bestellung 278 Stücke: Lieferzeit 14-21 Tag (e) |
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IXHH40N150HV | IXYS |
![]() Description: Thyristor; 1.5kV; TO247HV; THT; tube; 7.6kA Type of thyristor: thyristor Max. off-state voltage: 1.5kV Case: TO247HV Mounting: THT Max. forward impulse current: 7.6kA Features of semiconductor devices: MOS-gated thyristor (MGT) Kind of package: tube |
Produkt ist nicht verfügbar |
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DSEK60-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 26Ax2; tube; Ifsm: 200A; TO247-3; 125W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 26A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 200A Case: TO247-3 Max. forward voltage: 2.55V Power dissipation: 125W Reverse recovery time: 40ns Technology: FRED |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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FUO22-12N | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 150A Electrical mounting: THT Max. off-state voltage: 1.2kV Max. forward voltage: 1.2V Load current: 30A Max. forward impulse current: 150A Type of bridge rectifier: three-phase Case: ISOPLUS i4-pac™ x024a |
auf Bestellung 255 Stücke: Lieferzeit 14-21 Tag (e) |
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LBA120P | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA Case: DIP8 On-state resistance: 20Ω Mounting: SMT Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Contacts configuration: SPST-NO + SPST-NC Max. operating current: 0.17A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 50mA Manufacturer series: OptoMOS Operating temperature: -40...85°C |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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LAA120PL | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Case: DIP8 On-state resistance: 20Ω Mounting: SMT Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.66x6.35x2.16mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO x2 Max. operating current: 0.17A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 50mA Manufacturer series: OptoMOS Operating temperature: -40...85°C |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFR26N120P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; 320W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Power dissipation: 320W Case: ISOPLUS247™ On-state resistance: 0.55Ω Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP80N12T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns Features of semiconductor devices: thrench gate power mosfet Polarisation: unipolar Kind of package: tube Gate charge: 80nC Kind of channel: enhancement Mounting: THT Case: TO220AB Reverse recovery time: 90ns Drain-source voltage: 120V Drain current: 80A On-state resistance: 17mΩ Type of transistor: N-MOSFET Power dissipation: 325W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTA80N12T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns Features of semiconductor devices: thrench gate power mosfet Polarisation: unipolar Kind of package: tube Gate charge: 80nC Kind of channel: enhancement Mounting: SMD Case: TO263 Reverse recovery time: 90ns Drain-source voltage: 120V Drain current: 80A On-state resistance: 17mΩ Type of transistor: N-MOSFET Power dissipation: 325W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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XS170S | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
auf Bestellung 249 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1977J | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 100mA Max. operating current: 1.25A Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 1Ω Mounting: THT Case: i4-pac Operating temperature: -40...85°C Body dimensions: 19.91x20.88x5.03mm Insulation voltage: 2.5kV Turn-on time: 20ms Turn-off time: 5ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
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LBB120 | IXYS |
![]() Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS Manufacturer series: OptoMOS On-state resistance: 20Ω Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.65x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NC x2 Max. operating current: 0.17A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 50mA Mounting: THT Operating temperature: -40...85°C Case: DIP8 |
auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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LCB120S | IXYS |
![]() Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC Manufacturer series: OptoMOS On-state resistance: 20Ω Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NC Max. operating current: 0.17A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 50mA Mounting: SMT Operating temperature: -40...85°C Case: DIP6 |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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LBB120S | IXYS |
![]() Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS Manufacturer series: OptoMOS On-state resistance: 20Ω Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.65x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NC x2 Max. operating current: 0.17A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 50mA Mounting: SMT Operating temperature: -40...85°C Case: DIP8 |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYH60N90C3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 900V; 60A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 750W Case: TO247-3 Mounting: THT Gate charge: 107nC Kind of package: tube Collector-emitter voltage: 900V Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 310A Turn-on time: 104ns Turn-off time: 268ns |
auf Bestellung 360 Stücke: Lieferzeit 14-21 Tag (e) |
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MMIX2F60N50P3 | IXYS |
![]() Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A Polarisation: unipolar Gate charge: 96nC Technology: HiPerFET™; Polar3™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 150A Mounting: SMD Case: SMPD Reverse recovery time: 250ns Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.12Ω Type of transistor: N-MOSFET x2 Power dissipation: 320W |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP6N50D2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 6A Power dissipation: 300W Case: TO220AB On-state resistance: 0.5Ω Mounting: THT Kind of package: tube Kind of channel: depletion Reverse recovery time: 64ns |
auf Bestellung 162 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP18P10T | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB Reverse recovery time: 62ns Drain-source voltage: -100V Drain current: -18A On-state resistance: 0.12Ω Type of transistor: P-MOSFET Power dissipation: 83W Polarisation: unipolar Kind of package: tube Gate charge: 39nC Technology: TrenchP™ Kind of channel: enhancement Gate-source voltage: ±15V Mounting: THT Case: TO220AB |
auf Bestellung 242 Stücke: Lieferzeit 14-21 Tag (e) |
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VHFD37-16IO1 | IXYS |
![]() Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Features of semiconductor devices: field diodes; freewheelling diode Type of bridge rectifier: half-controlled Case: V1-A-Pack Leads: connectors 2,0x0,5mm Max. off-state voltage: 1.6kV Load current: 40A Gate current: 50/80mA Max. forward impulse current: 280A |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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VUO80-12NO1 | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 80A; Ifsm: 600A Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 80A Max. forward impulse current: 0.6kA Electrical mounting: FASTON connectors Version: module Max. forward voltage: 1.14V Leads: connectors 2,0x0,5mm Case: V1-A-Pack Mechanical mounting: screw |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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MCD26-16io8B | IXYS |
![]() ![]() ![]() Description: Module: diode-thyristor; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; bulk Electrical mounting: FASTON connectors; screw Max. off-state voltage: 1.6kV Max. load current: 42A Max. forward voltage: 1.27V Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. forward impulse current: 520A Kind of package: bulk Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.85V Case: TO240AA |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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MCD56-08io8B | IXYS |
![]() ![]() ![]() Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk Max. off-state voltage: 0.8kV Load current: 60A Max. forward impulse current: 1.5kA Electrical mounting: FASTON connectors; screw Max. forward voltage: 1.24V Case: TO240AA Mechanical mounting: screw Kind of package: bulk Type of module: diode-thyristor Threshold on-voltage: 0.85V Max. load current: 100A Semiconductor structure: double series Gate current: 100/200mA |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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MCD95-12io8B | IXYS |
![]() ![]() ![]() Description: Module: diode-thyristor; 1.2kV; 116A; TO240AA; Ufmax: 1.28V; bulk Max. off-state voltage: 1.2kV Load current: 116A Max. forward impulse current: 2.25kA Electrical mounting: FASTON connectors; screw Max. forward voltage: 1.28V Case: TO240AA Mechanical mounting: screw Kind of package: bulk Type of module: diode-thyristor Threshold on-voltage: 0.85V Max. load current: 180A Semiconductor structure: double series Gate current: 150/200mA |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
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MCD44-08io8B | IXYS |
![]() ![]() ![]() Description: Module: diode-thyristor; 800V; 49A; TO240AA; Ufmax: 1.34V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 49A Case: TO240AA Max. forward voltage: 1.34V Max. forward impulse current: 1.15kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Max. load current: 77A Gate current: 100/200mA Kind of package: bulk Threshold on-voltage: 0.85V |
auf Bestellung 53 Stücke: Lieferzeit 14-21 Tag (e) |
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MCC95-16io1B | IXYS |
![]() ![]() ![]() Description: Module: thyristor; double series; 1.6kV; 116A; TO240AA; Ufmax: 1.5V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 116A Case: TO240AA Max. forward voltage: 1.5V Max. forward impulse current: 2.25kA Gate current: 150/200mA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
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MMO90-16io6 | IXYS |
![]() Description: Module: thyristor; opposing; 600V; 41A; SOT227B; Ufmax: 1.43V; screw Type of module: thyristor Semiconductor structure: opposing Max. off-state voltage: 0.6kV Load current: 41A Case: SOT227B Max. forward voltage: 1.43V Max. forward impulse current: 860A Gate current: 100/200mA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk |
auf Bestellung 71 Stücke: Lieferzeit 14-21 Tag (e) |
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MUBW25-06A6K |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A
Collector current: 21A
Power dissipation: 100W
Case: E1-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Application: motors
Electrical mounting: Press-in PCB
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A
Collector current: 21A
Power dissipation: 100W
Case: E1-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Application: motors
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX250N10P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 250A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 250A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DSEP60-12A |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.81V
Power dissipation: 330W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.81V
Power dissipation: 330W
Reverse recovery time: 40ns
Technology: HiPerFRED™
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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6+ | 12.47 EUR |
8+ | 8.94 EUR |
9+ | 8.45 EUR |
DSEP60-12AR | ![]() |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: ISOPLUS247™
Max. forward voltage: 2.66V
Power dissipation: 230W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: ISOPLUS247™
Max. forward voltage: 2.66V
Power dissipation: 230W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ50N25T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO3P
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO3P
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXDI614CI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Kind of output: inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Turn-on time: 140ns
Turn-off time: 130ns
Output current: -14...14A
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Kind of output: inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Turn-on time: 140ns
Turn-off time: 130ns
Output current: -14...14A
auf Bestellung 773 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.93 EUR |
14+ | 5.25 EUR |
16+ | 4.48 EUR |
50+ | 4.39 EUR |
250+ | 4.29 EUR |
IXDN609CI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 1092 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.75 EUR |
25+ | 2.93 EUR |
26+ | 2.77 EUR |
100+ | 2.69 EUR |
250+ | 2.66 EUR |
IXDN630MCI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 9...35V
Turn-on time: 135ns
Turn-off time: 135ns
Output current: -30...30A
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 9...35V
Turn-on time: 135ns
Turn-off time: 135ns
Output current: -30...30A
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.11 EUR |
9+ | 8.14 EUR |
50+ | 7.82 EUR |
IXDD630CI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 12.5...35V
Turn-on time: 135ns
Turn-off time: 135ns
Output current: -30...30A
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 12.5...35V
Turn-on time: 135ns
Turn-off time: 135ns
Output current: -30...30A
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.17 EUR |
9+ | 8.14 EUR |
IXDD614CI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 874 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.93 EUR |
17+ | 4.38 EUR |
18+ | 4.15 EUR |
250+ | 3.98 EUR |
IXDI609CI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 796 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.82 EUR |
24+ | 3.06 EUR |
25+ | 2.90 EUR |
100+ | 2.79 EUR |
IXDI630MCI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Kind of output: inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 12.5...35V
Turn-on time: 135ns
Turn-off time: 135ns
Output current: -30...30A
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Kind of output: inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 12.5...35V
Turn-on time: 135ns
Turn-off time: 135ns
Output current: -30...30A
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 10.07 EUR |
9+ | 8.02 EUR |
10+ | 7.99 EUR |
50+ | 7.72 EUR |
LCC110P |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Turn-on time: 4ms
Insulation voltage: 3.75kV
On-state resistance: 35Ω
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-off time: 4ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Turn-on time: 4ms
Insulation voltage: 3.75kV
On-state resistance: 35Ω
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-off time: 4ms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LCC110PTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Turn-on time: 4ms
Insulation voltage: 3.75kV
On-state resistance: 35Ω
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-off time: 4ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Turn-on time: 4ms
Insulation voltage: 3.75kV
On-state resistance: 35Ω
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-off time: 4ms
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LCC110STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Turn-on time: 4ms
Insulation voltage: 3.75kV
On-state resistance: 35Ω
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-off time: 4ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Turn-on time: 4ms
Insulation voltage: 3.75kV
On-state resistance: 35Ω
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-off time: 4ms
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CPC1706Y |
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Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; -40÷85°C
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 4A
Switched voltage: max. 60V DC
Relay variant: current source
Mounting: THT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Kind of output: MOSFET
Turn-off time: 2ms
Turn-on time: 5ms
On-state resistance: 90mΩ
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; -40÷85°C
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 4A
Switched voltage: max. 60V DC
Relay variant: current source
Mounting: THT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Kind of output: MOSFET
Turn-off time: 2ms
Turn-on time: 5ms
On-state resistance: 90mΩ
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.51 EUR |
DPG30I400HA |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30A; tube; Ifsm: 360A; TO247-2; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 360A
Case: TO247-2
Max. forward voltage: 1.13V
Reverse recovery time: 45ns
Technology: HiPerFRED™ 2nd Gen
Power dissipation: 160W
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30A; tube; Ifsm: 360A; TO247-2; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 360A
Case: TO247-2
Max. forward voltage: 1.13V
Reverse recovery time: 45ns
Technology: HiPerFRED™ 2nd Gen
Power dissipation: 160W
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.20 EUR |
19+ | 3.78 EUR |
24+ | 3.00 EUR |
26+ | 2.85 EUR |
DPG60C400HB |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Mounting: THT
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.41V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Mounting: THT
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.41V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 7.95 EUR |
DSEI2X31-04C |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.3kA
Case: SOT227B
Max. forward voltage: 1.4V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.3kA
Case: SOT227B
Max. forward voltage: 1.4V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 29.56 EUR |
IXTP12N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 300ns
Drain-source voltage: 500V
Drain current: 12A
On-state resistance: 0.5Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 300ns
Drain-source voltage: 500V
Drain current: 12A
On-state resistance: 0.5Ω
Produkt ist nicht verfügbar
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IXFP12N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Kind of channel: enhancement
Drain-source voltage: 500V
Drain current: 12A
On-state resistance: 0.5Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Kind of channel: enhancement
Drain-source voltage: 500V
Drain current: 12A
On-state resistance: 0.5Ω
Produkt ist nicht verfügbar
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IXTA12N50P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 300ns
Drain-source voltage: 500V
Drain current: 12A
On-state resistance: 0.5Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 300ns
Drain-source voltage: 500V
Drain current: 12A
On-state resistance: 0.5Ω
Produkt ist nicht verfügbar
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MIXG330PF1200PTSF |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Case: SimBus F
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Case: SimBus F
Produkt ist nicht verfügbar
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MIXG330PF1200TSF |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Case: SimBus F
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Case: SimBus F
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DH20-18A |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 20A; tube; Ifsm: 150A; TO247-2; 140W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 150A
Kind of package: tube
Power dissipation: 140W
Features of semiconductor devices: fast switching
Max. forward voltage: 2.35V
Reverse recovery time: 300ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 20A; tube; Ifsm: 150A; TO247-2; 140W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 150A
Kind of package: tube
Power dissipation: 140W
Features of semiconductor devices: fast switching
Max. forward voltage: 2.35V
Reverse recovery time: 300ns
auf Bestellung 489 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.94 EUR |
15+ | 4.86 EUR |
16+ | 4.60 EUR |
120+ | 4.49 EUR |
IX4428NTR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting; non-inverting
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting; non-inverting
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Operating temperature: -40...125°C
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LAA110L |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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LAA110P |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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LAA110LSTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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LAA110STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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LAA110LS |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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LAA110PLTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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LAA110PTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC5602CTR |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
auf Bestellung 1256 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.30 EUR |
81+ | 0.89 EUR |
139+ | 0.52 EUR |
147+ | 0.49 EUR |
1000+ | 0.47 EUR |
VUO86-16NO7 |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Electrical mounting: THT
Leads: wire Ø 1.5mm
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.51V
Load current: 86A
Max. forward impulse current: 0.55kA
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Case: ECO-PAC 1
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Electrical mounting: THT
Leads: wire Ø 1.5mm
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.51V
Load current: 86A
Max. forward impulse current: 0.55kA
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Case: ECO-PAC 1
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.89 EUR |
100+ | 15.66 EUR |
IXHH40N150HV |
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Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247HV; THT; tube; 7.6kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: TO247HV
Mounting: THT
Max. forward impulse current: 7.6kA
Features of semiconductor devices: MOS-gated thyristor (MGT)
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247HV; THT; tube; 7.6kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: TO247HV
Mounting: THT
Max. forward impulse current: 7.6kA
Features of semiconductor devices: MOS-gated thyristor (MGT)
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DSEK60-12A |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26Ax2; tube; Ifsm: 200A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.55V
Power dissipation: 125W
Reverse recovery time: 40ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26Ax2; tube; Ifsm: 200A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.55V
Power dissipation: 125W
Reverse recovery time: 40ns
Technology: FRED
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.55 EUR |
8+ | 8.94 EUR |
FUO22-12N |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 150A
Electrical mounting: THT
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.2V
Load current: 30A
Max. forward impulse current: 150A
Type of bridge rectifier: three-phase
Case: ISOPLUS i4-pac™ x024a
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 150A
Electrical mounting: THT
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.2V
Load current: 30A
Max. forward impulse current: 150A
Type of bridge rectifier: three-phase
Case: ISOPLUS i4-pac™ x024a
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 18.63 EUR |
5+ | 17.62 EUR |
25+ | 17.39 EUR |
100+ | 16.93 EUR |
LBA120P |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Case: DIP8
On-state resistance: 20Ω
Mounting: SMT
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Case: DIP8
On-state resistance: 20Ω
Mounting: SMT
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.15 EUR |
14+ | 5.35 EUR |
15+ | 5.05 EUR |
LAA120PL |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Case: DIP8
On-state resistance: 20Ω
Mounting: SMT
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Case: DIP8
On-state resistance: 20Ω
Mounting: SMT
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.30 EUR |
17+ | 4.22 EUR |
IXFR26N120P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 42.79 EUR |
IXTP80N12T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Kind of package: tube
Gate charge: 80nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 90ns
Drain-source voltage: 120V
Drain current: 80A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 325W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Kind of package: tube
Gate charge: 80nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 90ns
Drain-source voltage: 120V
Drain current: 80A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 325W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTA80N12T2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Kind of package: tube
Gate charge: 80nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
Reverse recovery time: 90ns
Drain-source voltage: 120V
Drain current: 80A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 325W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Kind of package: tube
Gate charge: 80nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
Reverse recovery time: 90ns
Drain-source voltage: 120V
Drain current: 80A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 325W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XS170S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
auf Bestellung 249 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.75 EUR |
32+ | 2.27 EUR |
34+ | 2.14 EUR |
CPC1977J |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1.25A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1.25A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LBB120 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Manufacturer series: OptoMOS
On-state resistance: 20Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC x2
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Manufacturer series: OptoMOS
On-state resistance: 20Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC x2
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 7.98 EUR |
14+ | 5.19 EUR |
15+ | 4.90 EUR |
LCB120S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC
Manufacturer series: OptoMOS
On-state resistance: 20Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC
Manufacturer series: OptoMOS
On-state resistance: 20Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.78 EUR |
22+ | 3.29 EUR |
24+ | 3.10 EUR |
LBB120S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Manufacturer series: OptoMOS
On-state resistance: 20Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC x2
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Manufacturer series: OptoMOS
On-state resistance: 20Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC x2
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP8
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.80 EUR |
9+ | 8.14 EUR |
IXYH60N90C3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 60A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 310A
Turn-on time: 104ns
Turn-off time: 268ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 60A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 310A
Turn-on time: 104ns
Turn-off time: 268ns
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 13.90 EUR |
9+ | 8.18 EUR |
120+ | 8.11 EUR |
MMIX2F60N50P3 |
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Hersteller: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A
Polarisation: unipolar
Gate charge: 96nC
Technology: HiPerFET™; Polar3™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 150A
Mounting: SMD
Case: SMPD
Reverse recovery time: 250ns
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET x2
Power dissipation: 320W
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A
Polarisation: unipolar
Gate charge: 96nC
Technology: HiPerFET™; Polar3™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 150A
Mounting: SMD
Case: SMPD
Reverse recovery time: 250ns
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET x2
Power dissipation: 320W
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 42.71 EUR |
20+ | 41.84 EUR |
IXTP6N50D2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.93 EUR |
12+ | 5.96 EUR |
IXTP18P10T |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Reverse recovery time: 62ns
Drain-source voltage: -100V
Drain current: -18A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Mounting: THT
Case: TO220AB
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Reverse recovery time: 62ns
Drain-source voltage: -100V
Drain current: -18A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Mounting: THT
Case: TO220AB
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.66 EUR |
40+ | 1.79 EUR |
43+ | 1.69 EUR |
VHFD37-16IO1 |
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Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Features of semiconductor devices: field diodes; freewheelling diode
Type of bridge rectifier: half-controlled
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Max. off-state voltage: 1.6kV
Load current: 40A
Gate current: 50/80mA
Max. forward impulse current: 280A
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Features of semiconductor devices: field diodes; freewheelling diode
Type of bridge rectifier: half-controlled
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Max. off-state voltage: 1.6kV
Load current: 40A
Gate current: 50/80mA
Max. forward impulse current: 280A
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 40.61 EUR |
3+ | 40.60 EUR |
VUO80-12NO1 |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors 2,0x0,5mm
Case: V1-A-Pack
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors 2,0x0,5mm
Case: V1-A-Pack
Mechanical mounting: screw
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.98 EUR |
MCD26-16io8B |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Electrical mounting: FASTON connectors; screw
Max. off-state voltage: 1.6kV
Max. load current: 42A
Max. forward voltage: 1.27V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 520A
Kind of package: bulk
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Case: TO240AA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Electrical mounting: FASTON connectors; screw
Max. off-state voltage: 1.6kV
Max. load current: 42A
Max. forward voltage: 1.27V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 520A
Kind of package: bulk
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Case: TO240AA
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 27.07 EUR |
MCD56-08io8B |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Max. off-state voltage: 0.8kV
Load current: 60A
Max. forward impulse current: 1.5kA
Electrical mounting: FASTON connectors; screw
Max. forward voltage: 1.24V
Case: TO240AA
Mechanical mounting: screw
Kind of package: bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Max. load current: 100A
Semiconductor structure: double series
Gate current: 100/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Max. off-state voltage: 0.8kV
Load current: 60A
Max. forward impulse current: 1.5kA
Electrical mounting: FASTON connectors; screw
Max. forward voltage: 1.24V
Case: TO240AA
Mechanical mounting: screw
Kind of package: bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Max. load current: 100A
Semiconductor structure: double series
Gate current: 100/200mA
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 27.07 EUR |
MCD95-12io8B |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Max. off-state voltage: 1.2kV
Load current: 116A
Max. forward impulse current: 2.25kA
Electrical mounting: FASTON connectors; screw
Max. forward voltage: 1.28V
Case: TO240AA
Mechanical mounting: screw
Kind of package: bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Max. load current: 180A
Semiconductor structure: double series
Gate current: 150/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Max. off-state voltage: 1.2kV
Load current: 116A
Max. forward impulse current: 2.25kA
Electrical mounting: FASTON connectors; screw
Max. forward voltage: 1.28V
Case: TO240AA
Mechanical mounting: screw
Kind of package: bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Max. load current: 180A
Semiconductor structure: double series
Gate current: 150/200mA
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 36.74 EUR |
36+ | 36.14 EUR |
MCD44-08io8B |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 77A
Gate current: 100/200mA
Kind of package: bulk
Threshold on-voltage: 0.85V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 77A
Gate current: 100/200mA
Kind of package: bulk
Threshold on-voltage: 0.85V
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 25.23 EUR |
36+ | 24.72 EUR |
MCC95-16io1B |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 116A; TO240AA; Ufmax: 1.5V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 116A; TO240AA; Ufmax: 1.5V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 44.57 EUR |
36+ | 43.89 EUR |
MMO90-16io6 |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 600V; 41A; SOT227B; Ufmax: 1.43V; screw
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 0.6kV
Load current: 41A
Case: SOT227B
Max. forward voltage: 1.43V
Max. forward impulse current: 860A
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Category: Thyristor modules
Description: Module: thyristor; opposing; 600V; 41A; SOT227B; Ufmax: 1.43V; screw
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 0.6kV
Load current: 41A
Case: SOT227B
Max. forward voltage: 1.43V
Max. forward impulse current: 860A
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 36.18 EUR |
3+ | 36.16 EUR |
10+ | 35.32 EUR |