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VMM300-03F IXYS VMM300-03F.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 300V; 220A; Y3-DCB; Idm: 1.16kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 300V
Drain current: 220A
Case: Y3-DCB
Topology: MOSFET half-bridge
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 1.16kA
Power dissipation: 1.5kW
Technology: HiPerFET™
Gate-source voltage: ±20V
Mechanical mounting: screw
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IXXH80N65B4 IXXH80N65B4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9E035A3E93820&compId=IXXH80N65B4.pdf?ci_sign=87dde9e4c61408c192916628afc8e7dc723e51a1 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.98 EUR
12+6.03 EUR
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IXGK100N170 IXGK100N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0A6DAFB799820&compId=IXGK(X)100N170.pdf?ci_sign=c8053da6d72a2c79586ce8a850d84b1d66a7da31 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 600A
Turn-on time: 285ns
Turn-off time: 720ns
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 425nC
Technology: NPT
Case: TO264
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IXA12IF1200HB IXA12IF1200HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1DC4F060958BF&compId=IXA12IF1200HB.pdf?ci_sign=299bea4b8317f292597b6ce020d3fb5193cac378 Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Collector current: 13A
Case: TO247-3
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.08 EUR
20+3.66 EUR
21+3.46 EUR
Mindestbestellmenge: 12
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IXA37IF1200HJ IXA37IF1200HJ IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F187B680865820&compId=IXA37IF1200HJ.pdf?ci_sign=d85df4621c1de3de20b1ce19f7cad76b3d699e55 Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Collector current: 37A
Case: PLUS247™
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 195W
Kind of package: tube
Gate charge: 106nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
4+20.28 EUR
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IXA4I1200UC-TRL IXYS IXA4I1200UC.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252
Collector current: 9A
Case: TO252
Technology: XPT™
Power dissipation: 45W
Gate charge: 12nC
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Turn-on time: 70ns
Turn-off time: 250ns
Type of transistor: IGBT
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IXA12IF1200PB IXA12IF1200PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB63A1675A5820&compId=IXA12IF1200PB.pdf?ci_sign=3a3b930c74ed5ec2abbc2b27f4648ec3ddaa92c4 Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO220-3
Collector current: 13A
Case: TO220-3
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
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ITF48IF1200HR ITF48IF1200HR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A08E73B4D71FB820&compId=ITF48IF1200HR.pdf?ci_sign=1fd50b58ff10a606c5698d894f8e3a9430c43cbf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™
Collector current: 48A
Case: ISO247™
Technology: Trench; XPT™
Power dissipation: 390W
Kind of package: tube
Gate charge: 175nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 460ns
Type of transistor: IGBT
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IXA27IF1200HJ IXA27IF1200HJ IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99ACFE35DEFE79820&compId=IXA27IF1200HJ.pdf?ci_sign=7d7443a73e4eebd7bc2cc9e0af76a6cac3154dfa Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 27A; 150W; PLUS247™
Collector current: 27A
Case: PLUS247™
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 150W
Kind of package: tube
Gate charge: 76nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
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IXA20IF1200HB IXA20IF1200HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB94C0D704F820&compId=IXA20IF1200HB.pdf?ci_sign=f2c28f3fc9942fb2c8c7f7fa7414c698c8c5e144 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO247-3
Collector current: 22A
Case: TO247-3
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
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IXA20I1200PB IXA20I1200PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB8BBC3A9FB820&compId=IXA20I1200PB.pdf?ci_sign=6dd16cf67d25fa1a3938eb8ec45c2d995057c8f8 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Collector current: 22A
Case: TO220-3
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
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IXA17IF1200HJ IXA17IF1200HJ IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB82D3B22D5820&compId=IXA17IF1200HJ.pdf?ci_sign=5f8dcaeccaed5bbf63ae08779ef9c5c0f87a4868 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 18A; 100W; PLUS247™
Collector current: 18A
Case: PLUS247™
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 100W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
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IXA45IF1200HB IXA45IF1200HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD1FCD2218D820&compId=IXA45IF1200HB.pdf?ci_sign=a4799b66b629553e978da5dfb18f353571f2b1fb Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 45A; 325W; TO247-3
Collector current: 45A
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Power dissipation: 325W
Kind of package: tube
Gate charge: 106nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
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IXA4IF1200TC IXA4IF1200TC IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB42E85CA15820&compId=IXA4IF1200TC.pdf?ci_sign=9b440a49c097b86f76f829b7b6ea9edc28db0525 Category: SMD IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 5A; 45W; TO268
Collector current: 5A
Case: TO268
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 45W
Kind of package: tube
Gate charge: 12nC
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
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IXA55I1200HJ IXA55I1200HJ IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD44DED58B5820&compId=IXA55I1200HJ.pdf?ci_sign=f5b827cc15e451293be56c855e8b0bab6cbfdbec Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 54A; 290W; PLUS247™
Collector current: 54A
Case: PLUS247™
Technology: GenX3™; Planar; XPT™
Power dissipation: 290W
Kind of package: tube
Gate charge: 0.19µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
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MIXA61H1200ED IXYS MIXA61H1200ED.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 290W
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Application: motors; photovoltaics
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IXG70IF1200NA IXYS Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 86A
Case: SOT227B
Electrical mounting: screw
Technology: X2PT
Mechanical mounting: screw
Features of semiconductor devices: integrated anti-parallel diode
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MIXA10W1200TML IXYS MIXA10W1200TML.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 12A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 65W
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Application: fans; for pump; motors
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MIXA60W1200TED IXYS MIXA60W1200TED.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 290W
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Application: motors; photovoltaics
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MIXG70W1200TED IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 79A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
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MIXA30W1200TED IXYS MIXA30W1200TED.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 150W
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Application: motors; photovoltaics
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MIXA30W1200TML IXYS MIXA30W1200TML.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 150W
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Application: fans; for pump; motors
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MIXA40W1200TED IXYS MIXA40W1200TED.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 195W
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Application: motors; photovoltaics
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MIXA41W1200ED IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
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MIXA80R1200VA IXYS MIXA80R1200VA.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 390W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: V1-A-Pack
Electrical mounting: FASTON connectors
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: fans; for pump; motors; photovoltaics
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MIXA80W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
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MIXA80W1200TED IXYS MIXA80W1200TED.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
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MIXA81H1200EH IXYS MIXA81H1200EH.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
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MIXA20W1200TML IXYS MIXA20W1200TML.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 20A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 100W
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Application: fans; for pump; motors
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MIXA40W1200TML IXYS MIXA40W1200TML.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 195W
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Application: fans; for pump; motors
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MIXA80W1200TEH IXYS MIXA80W1200TEH.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
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IXGN72N60C3H1 IXGN72N60C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2FA2829F3B820&compId=IXGN72N60C3H1.pdf?ci_sign=0baf9eb2a151751236ca0716618ffe401a388905 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Power dissipation: 360W
Case: SOT227B
Type of semiconductor module: IGBT
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 52A
Pulsed collector current: 360A
Electrical mounting: screw
Mechanical mounting: screw
Technology: GenX3™; PT
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IXGX72N60C3H1 IXGX72N60C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB0E62FFAC9820&compId=IXGX72N60C3H1.pdf?ci_sign=cac8206ee321d338a1e80ece5d0032b45e4a91ee Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Power dissipation: 540W
Case: PLUS247™
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 72A
Pulsed collector current: 360A
Turn-on time: 62ns
Turn-off time: 244ns
Technology: GenX3™; PT
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MCC310-16io1 MCC310-16io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4D62B1B656469&compId=MCC310-16IO1.pdf?ci_sign=dfdc991fb77337f659d202ac945f6212a22fef1a Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320A; Y2-DCB; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 9.8kA
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MCC310-18io1 IXYS MCC310,MCD310.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; Y2; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCC310-12io1 IXYS MCC310%2CMCD310.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320A; Y2; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCC310-08io1 IXYS MCC310,MCD310.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 320A; Y2; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCC310-14io1 IXYS MCC310,MCD310.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 320A; Y2; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXFN140N30P IXFN140N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF909B1E4561820&compId=IXFN140N30P.pdf?ci_sign=2b393dfec7ce74f333dc9621ba59a1ebed6ea252 description Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Polarisation: unipolar
Power dissipation: 700W
On-state resistance: 24mΩ
Drain current: 110A
Drain-source voltage: 300V
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 185nC
Case: SOT227B
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 300A
Type of semiconductor module: MOSFET transistor
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IXFK140N30P IXFK140N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5FBBF2FB0F8BF&compId=IXFK140N30P_IXFX140N30P.pdf?ci_sign=6d081054787efa2c56b843d54a6d6c3f464460d2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Polarisation: unipolar
Power dissipation: 1.04kW
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Drain current: 140A
Drain-source voltage: 300V
Reverse recovery time: 200ns
Gate charge: 185nC
Case: TO264
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Kind of package: tube
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IXTK140N30P IXTK140N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF917BA10D161E27&compId=IXTK140N30P-DTE.pdf?ci_sign=0539e3c51f0d1e46075142cd98d33da5a34d86f9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Polarisation: unipolar
Power dissipation: 1.04kW
Type of transistor: N-MOSFET
On-state resistance: 0.24Ω
Drain current: 140A
Drain-source voltage: 300V
Reverse recovery time: 250ns
Gate charge: 185nC
Case: TO264
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Kind of package: tube
Produkt ist nicht verfügbar
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IXFR140N30P IXFR140N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6AC7820&compId=IXFR140N30P.pdf?ci_sign=6befd397f4aa00ee61401df908383d013ccb0c8e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™
Mounting: THT
Polarisation: unipolar
Power dissipation: 300W
Type of transistor: N-MOSFET
On-state resistance: 28mΩ
Drain current: 70A
Drain-source voltage: 300V
Gate charge: 185nC
Case: ISOPLUS247™
Kind of channel: enhancement
Kind of package: tube
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IXFH70N20Q3 IXFH70N20Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D43ABF543E3820&compId=IXFH(T)70N20Q3.pdf?ci_sign=be45f1d929df193dd38505d25feb4e73fd60918a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO247-3
Mounting: THT
Case: TO247-3
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhancement
auf Bestellung 4 Stücke:
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IXFK170N20T IXFK170N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5344B49DB7820&compId=IXFK(X)170N20T.pdf?ci_sign=132d408b08d163a2c5614a95cdf3179fcf883841 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264
Mounting: THT
Case: TO264
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.15kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhancement
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IXFK170N20P IXFK170N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE7919FF3517E5D4746&compId=IXF_170N20P.pdf?ci_sign=7a8e99d2eb2f7ace504a59de513ff4d7089e5376 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264
Mounting: THT
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
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IXFH110N25T IXFH110N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC04B820&compId=IXFH110N25T.pdf?ci_sign=865e81011edebf9d86100c2413f31800becab293 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 256 Stücke:
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120+7.79 EUR
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IXTH110N25T IXTH110N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917DB820&compId=IXTH110N25T.pdf?ci_sign=70bf22a6c770d2e1a644817b2000fd043bc19e40 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
Features of semiconductor devices: thrench gate power mosfet
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IXFH110N15T2 IXFH110N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC035820&compId=IXFH110N15T2.pdf?ci_sign=72224343f620ffa61176fabd9afc9a1c50cf9d78 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 286 Stücke:
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9+8.15 EUR
10+7.32 EUR
11+6.84 EUR
30+6.68 EUR
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IXFA110N15T2 IXFA110N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A33DBB971E9820&compId=IXFA(P)110N15T2.pdf?ci_sign=1d332224bb7b48f25e03aad92d567e7b0f5abeb3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO263
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 43 Stücke:
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9+8.04 EUR
15+4.9 EUR
16+4.63 EUR
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IXFH110N10P IXFH110N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC01F820&compId=IXFH110N10P.pdf?ci_sign=2692b409156b87ba36b15cc212f6c4d34cf32b38 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
auf Bestellung 300 Stücke:
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9+8.68 EUR
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CPC1726Y CPC1726Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931BC75C80C7&compId=CPC1726.pdf?ci_sign=a53eb8bf498480b7b73e068027bb14401528e7ca Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; OptoMOS; 0.75Ω
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V DC
Relay variant: current source
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Kind of output: MOSFET
Turn-off time: 2ms
Turn-on time: 5ms
On-state resistance: 0.75Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
auf Bestellung 93 Stücke:
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14+5.45 EUR
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IXBH24N170 IXBH24N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF2EB66970D820&compId=IXBH(t)24N170.pdf?ci_sign=2bee8c9822cc9e5187f0a7830b316f81bec56b83 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Turn-off time: 1285ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Technology: BiMOSFET™
Case: TO247-3
Mounting: THT
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 230A
Turn-on time: 190ns
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1+71.5 EUR
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IXTP01N100D IXTP01N100D IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389C7B8E6A07820&compId=IXTP(Y)01N100D.pdf?ci_sign=15922f911bd95ebe5bb5b025278134f6086945cf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 2ns
Drain-source voltage: 1kV
Drain current: 0.1A
On-state resistance: 80Ω
Gate charge: 0.1µC
Kind of channel: depletion
auf Bestellung 33 Stücke:
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9+8.17 EUR
12+6.19 EUR
13+5.85 EUR
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CLA100E1200KB CLA100E1200KB IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3BE18465FA0D2&compId=CLA100E1200KB.pdf?ci_sign=8a6a9c1a38dc741ed9180f9f3b065cc6992c0b39 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Max. off-state voltage: 1.2kV
Load current: 100A
Case: TO264
Mounting: THT
Max. load current: 160A
Max. forward impulse current: 1.19kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
auf Bestellung 44 Stücke:
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7+10.24 EUR
9+8.38 EUR
10+7.92 EUR
25+7.74 EUR
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IXFK230N20T IXFK230N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCF347BAAB5820&compId=IXFK(X)230N20T.pdf?ci_sign=e4a579f4f1660cfb2f2f8a74c12b8edd99086286 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Drain current: 230A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1670W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 358nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 200V
auf Bestellung 25 Stücke:
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3+24.35 EUR
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IXFK180N25T IXFK180N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D54A180A387820&compId=IXFK(X)180N25T.pdf?ci_sign=df55105c078d9abc2821a1e455a37ba5cb1f4c8f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Drain current: 180A
On-state resistance: 12.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 1390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 364nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 250V
auf Bestellung 27 Stücke:
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4+18.73 EUR
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IXFK88N30P IXFK88N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D392A66FA67820&compId=IXFH(K%2CT)88N30P.pdf?ci_sign=335b5cd3cfe63914107ecf98497f5a0e56bc651d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Drain current: 88A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Kind of package: tube
Gate charge: 180nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 300V
auf Bestellung 5 Stücke:
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IXFK150N30P3 IXFK150N30P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D336DC7D7F5820&compId=IXFK(X)150N30P3.pdf?ci_sign=e1cc3cf21ad8db90ded334fd7d3c224869e18e9c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Drain current: 150A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 300V
auf Bestellung 100 Stücke:
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4+20.35 EUR
100+19.56 EUR
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IXFK240N25X3 IXFK240N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCD7F081F39820&compId=IXFK(X)240N25X3.pdf?ci_sign=505f1373677b8d12c73e55874fb205a4c2db2269 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; TO264; 177ns
Drain current: 240A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 345nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Reverse recovery time: 177ns
Drain-source voltage: 250V
auf Bestellung 12 Stücke:
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3+31.69 EUR
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IXFK80N50P IXFK80N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BB72E5378B7820&compId=IXFK(X)80N50P.pdf?ci_sign=d179f385e73cb0dab5632c8fec26d14e901d5f07 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264
Drain current: 80A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 500V
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4+20.49 EUR
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VMM300-03F VMM300-03F.pdf
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 300V; 220A; Y3-DCB; Idm: 1.16kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 300V
Drain current: 220A
Case: Y3-DCB
Topology: MOSFET half-bridge
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 1.16kA
Power dissipation: 1.5kW
Technology: HiPerFET™
Gate-source voltage: ±20V
Mechanical mounting: screw
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IXXH80N65B4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9E035A3E93820&compId=IXXH80N65B4.pdf?ci_sign=87dde9e4c61408c192916628afc8e7dc723e51a1
IXXH80N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.98 EUR
12+6.03 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXGK100N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0A6DAFB799820&compId=IXGK(X)100N170.pdf?ci_sign=c8053da6d72a2c79586ce8a850d84b1d66a7da31
IXGK100N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 600A
Turn-on time: 285ns
Turn-off time: 720ns
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 425nC
Technology: NPT
Case: TO264
Produkt ist nicht verfügbar
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IXA12IF1200HB pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1DC4F060958BF&compId=IXA12IF1200HB.pdf?ci_sign=299bea4b8317f292597b6ce020d3fb5193cac378
IXA12IF1200HB
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Collector current: 13A
Case: TO247-3
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.08 EUR
20+3.66 EUR
21+3.46 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IXA37IF1200HJ pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F187B680865820&compId=IXA37IF1200HJ.pdf?ci_sign=d85df4621c1de3de20b1ce19f7cad76b3d699e55
IXA37IF1200HJ
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Collector current: 37A
Case: PLUS247™
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 195W
Kind of package: tube
Gate charge: 106nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.28 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXA4I1200UC-TRL IXA4I1200UC.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252
Collector current: 9A
Case: TO252
Technology: XPT™
Power dissipation: 45W
Gate charge: 12nC
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Turn-on time: 70ns
Turn-off time: 250ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA12IF1200PB pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB63A1675A5820&compId=IXA12IF1200PB.pdf?ci_sign=3a3b930c74ed5ec2abbc2b27f4648ec3ddaa92c4
IXA12IF1200PB
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO220-3
Collector current: 13A
Case: TO220-3
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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ITF48IF1200HR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A08E73B4D71FB820&compId=ITF48IF1200HR.pdf?ci_sign=1fd50b58ff10a606c5698d894f8e3a9430c43cbf
ITF48IF1200HR
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™
Collector current: 48A
Case: ISO247™
Technology: Trench; XPT™
Power dissipation: 390W
Kind of package: tube
Gate charge: 175nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 460ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA27IF1200HJ pVersion=0046&contRep=ZT&docId=005056AB82531ED99ACFE35DEFE79820&compId=IXA27IF1200HJ.pdf?ci_sign=7d7443a73e4eebd7bc2cc9e0af76a6cac3154dfa
IXA27IF1200HJ
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 27A; 150W; PLUS247™
Collector current: 27A
Case: PLUS247™
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 150W
Kind of package: tube
Gate charge: 76nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXA20IF1200HB pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB94C0D704F820&compId=IXA20IF1200HB.pdf?ci_sign=f2c28f3fc9942fb2c8c7f7fa7414c698c8c5e144
IXA20IF1200HB
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO247-3
Collector current: 22A
Case: TO247-3
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXA20I1200PB pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB8BBC3A9FB820&compId=IXA20I1200PB.pdf?ci_sign=6dd16cf67d25fa1a3938eb8ec45c2d995057c8f8
IXA20I1200PB
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Collector current: 22A
Case: TO220-3
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA17IF1200HJ pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB82D3B22D5820&compId=IXA17IF1200HJ.pdf?ci_sign=5f8dcaeccaed5bbf63ae08779ef9c5c0f87a4868
IXA17IF1200HJ
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 18A; 100W; PLUS247™
Collector current: 18A
Case: PLUS247™
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 100W
Kind of package: tube
Gate charge: 47nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA45IF1200HB pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD1FCD2218D820&compId=IXA45IF1200HB.pdf?ci_sign=a4799b66b629553e978da5dfb18f353571f2b1fb
IXA45IF1200HB
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 45A; 325W; TO247-3
Collector current: 45A
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Power dissipation: 325W
Kind of package: tube
Gate charge: 106nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA4IF1200TC pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB42E85CA15820&compId=IXA4IF1200TC.pdf?ci_sign=9b440a49c097b86f76f829b7b6ea9edc28db0525
IXA4IF1200TC
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 5A; 45W; TO268
Collector current: 5A
Case: TO268
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 45W
Kind of package: tube
Gate charge: 12nC
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXA55I1200HJ pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD44DED58B5820&compId=IXA55I1200HJ.pdf?ci_sign=f5b827cc15e451293be56c855e8b0bab6cbfdbec
IXA55I1200HJ
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 54A; 290W; PLUS247™
Collector current: 54A
Case: PLUS247™
Technology: GenX3™; Planar; XPT™
Power dissipation: 290W
Kind of package: tube
Gate charge: 0.19µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
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MIXA61H1200ED MIXA61H1200ED.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 290W
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
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IXG70IF1200NA
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 86A
Case: SOT227B
Electrical mounting: screw
Technology: X2PT
Mechanical mounting: screw
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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MIXA10W1200TML MIXA10W1200TML.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 12A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 65W
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Application: fans; for pump; motors
Produkt ist nicht verfügbar
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MIXA60W1200TED MIXA60W1200TED.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 290W
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
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MIXG70W1200TED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 79A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MIXA30W1200TED MIXA30W1200TED.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 150W
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
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MIXA30W1200TML MIXA30W1200TML.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 150W
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Application: fans; for pump; motors
Produkt ist nicht verfügbar
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MIXA40W1200TED MIXA40W1200TED.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 195W
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
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MIXA41W1200ED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MIXA80R1200VA MIXA80R1200VA.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 390W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: V1-A-Pack
Electrical mounting: FASTON connectors
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: fans; for pump; motors; photovoltaics
Produkt ist nicht verfügbar
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MIXA80W1200PTEH
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MIXA80W1200TED MIXA80W1200TED.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
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MIXA81H1200EH MIXA81H1200EH.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
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MIXA20W1200TML MIXA20W1200TML.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 20A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 100W
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Application: fans; for pump; motors
Produkt ist nicht verfügbar
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MIXA40W1200TML MIXA40W1200TML.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: E1-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 195W
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Application: fans; for pump; motors
Produkt ist nicht verfügbar
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MIXA80W1200TEH MIXA80W1200TEH.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Power dissipation: 390W
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Application: motors; photovoltaics
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGN72N60C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2FA2829F3B820&compId=IXGN72N60C3H1.pdf?ci_sign=0baf9eb2a151751236ca0716618ffe401a388905
IXGN72N60C3H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Power dissipation: 360W
Case: SOT227B
Type of semiconductor module: IGBT
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 52A
Pulsed collector current: 360A
Electrical mounting: screw
Mechanical mounting: screw
Technology: GenX3™; PT
Produkt ist nicht verfügbar
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IXGX72N60C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB0E62FFAC9820&compId=IXGX72N60C3H1.pdf?ci_sign=cac8206ee321d338a1e80ece5d0032b45e4a91ee
IXGX72N60C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Power dissipation: 540W
Case: PLUS247™
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 72A
Pulsed collector current: 360A
Turn-on time: 62ns
Turn-off time: 244ns
Technology: GenX3™; PT
Produkt ist nicht verfügbar
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MCC310-16io1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4D62B1B656469&compId=MCC310-16IO1.pdf?ci_sign=dfdc991fb77337f659d202ac945f6212a22fef1a
MCC310-16io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320A; Y2-DCB; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 9.8kA
Produkt ist nicht verfügbar
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MCC310-18io1 MCC310,MCD310.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; Y2; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCC310-12io1 MCC310%2CMCD310.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320A; Y2; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC310-08io1 MCC310,MCD310.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 320A; Y2; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCC310-14io1 MCC310,MCD310.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 320A; Y2; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN140N30P description pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF909B1E4561820&compId=IXFN140N30P.pdf?ci_sign=2b393dfec7ce74f333dc9621ba59a1ebed6ea252
IXFN140N30P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Polarisation: unipolar
Power dissipation: 700W
On-state resistance: 24mΩ
Drain current: 110A
Drain-source voltage: 300V
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 185nC
Case: SOT227B
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 300A
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXFK140N30P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5FBBF2FB0F8BF&compId=IXFK140N30P_IXFX140N30P.pdf?ci_sign=6d081054787efa2c56b843d54a6d6c3f464460d2
IXFK140N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Polarisation: unipolar
Power dissipation: 1.04kW
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Drain current: 140A
Drain-source voltage: 300V
Reverse recovery time: 200ns
Gate charge: 185nC
Case: TO264
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTK140N30P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF917BA10D161E27&compId=IXTK140N30P-DTE.pdf?ci_sign=0539e3c51f0d1e46075142cd98d33da5a34d86f9
IXTK140N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Polarisation: unipolar
Power dissipation: 1.04kW
Type of transistor: N-MOSFET
On-state resistance: 0.24Ω
Drain current: 140A
Drain-source voltage: 300V
Reverse recovery time: 250ns
Gate charge: 185nC
Case: TO264
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR140N30P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6AC7820&compId=IXFR140N30P.pdf?ci_sign=6befd397f4aa00ee61401df908383d013ccb0c8e
IXFR140N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™
Mounting: THT
Polarisation: unipolar
Power dissipation: 300W
Type of transistor: N-MOSFET
On-state resistance: 28mΩ
Drain current: 70A
Drain-source voltage: 300V
Gate charge: 185nC
Case: ISOPLUS247™
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH70N20Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D43ABF543E3820&compId=IXFH(T)70N20Q3.pdf?ci_sign=be45f1d929df193dd38505d25feb4e73fd60918a
IXFH70N20Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO247-3
Mounting: THT
Case: TO247-3
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFK170N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5344B49DB7820&compId=IXFK(X)170N20T.pdf?ci_sign=132d408b08d163a2c5614a95cdf3179fcf883841
IXFK170N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264
Mounting: THT
Case: TO264
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.15kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK170N20P pVersion=0046&contRep=ZT&docId=005056AB752F1EE7919FF3517E5D4746&compId=IXF_170N20P.pdf?ci_sign=7a8e99d2eb2f7ace504a59de513ff4d7089e5376
IXFK170N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264
Mounting: THT
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH110N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC04B820&compId=IXFH110N25T.pdf?ci_sign=865e81011edebf9d86100c2413f31800becab293
IXFH110N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 256 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.56 EUR
9+8.09 EUR
30+7.84 EUR
120+7.79 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXTH110N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917DB820&compId=IXTH110N25T.pdf?ci_sign=70bf22a6c770d2e1a644817b2000fd043bc19e40
IXTH110N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.65 EUR
9+8.08 EUR
10+7.64 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFH110N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC035820&compId=IXFH110N15T2.pdf?ci_sign=72224343f620ffa61176fabd9afc9a1c50cf9d78
IXFH110N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.15 EUR
10+7.32 EUR
11+6.84 EUR
30+6.68 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFA110N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A33DBB971E9820&compId=IXFA(P)110N15T2.pdf?ci_sign=1d332224bb7b48f25e03aad92d567e7b0f5abeb3
IXFA110N15T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO263
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.04 EUR
15+4.9 EUR
16+4.63 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFH110N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC01F820&compId=IXFH110N10P.pdf?ci_sign=2692b409156b87ba36b15cc212f6c4d34cf32b38
IXFH110N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.68 EUR
12+6.19 EUR
13+5.85 EUR
Mindestbestellmenge: 9
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CPC1726Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931BC75C80C7&compId=CPC1726.pdf?ci_sign=a53eb8bf498480b7b73e068027bb14401528e7ca
CPC1726Y
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; OptoMOS; 0.75Ω
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V DC
Relay variant: current source
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Kind of output: MOSFET
Turn-off time: 2ms
Turn-on time: 5ms
On-state resistance: 0.75Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.45 EUR
20+3.6 EUR
22+3.4 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXBH24N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF2EB66970D820&compId=IXBH(t)24N170.pdf?ci_sign=2bee8c9822cc9e5187f0a7830b316f81bec56b83
IXBH24N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Turn-off time: 1285ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Technology: BiMOSFET™
Case: TO247-3
Mounting: THT
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 230A
Turn-on time: 190ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTP01N100D pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389C7B8E6A07820&compId=IXTP(Y)01N100D.pdf?ci_sign=15922f911bd95ebe5bb5b025278134f6086945cf
IXTP01N100D
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 2ns
Drain-source voltage: 1kV
Drain current: 0.1A
On-state resistance: 80Ω
Gate charge: 0.1µC
Kind of channel: depletion
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.17 EUR
12+6.19 EUR
13+5.85 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
CLA100E1200KB pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3BE18465FA0D2&compId=CLA100E1200KB.pdf?ci_sign=8a6a9c1a38dc741ed9180f9f3b065cc6992c0b39
CLA100E1200KB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Max. off-state voltage: 1.2kV
Load current: 100A
Case: TO264
Mounting: THT
Max. load current: 160A
Max. forward impulse current: 1.19kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.24 EUR
9+8.38 EUR
10+7.92 EUR
25+7.74 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFK230N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCF347BAAB5820&compId=IXFK(X)230N20T.pdf?ci_sign=e4a579f4f1660cfb2f2f8a74c12b8edd99086286
IXFK230N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Drain current: 230A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1670W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 358nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 200V
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.35 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFK180N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D54A180A387820&compId=IXFK(X)180N25T.pdf?ci_sign=df55105c078d9abc2821a1e455a37ba5cb1f4c8f
IXFK180N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Drain current: 180A
On-state resistance: 12.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 1390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 364nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 250V
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.73 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFK88N30P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D392A66FA67820&compId=IXFH(K%2CT)88N30P.pdf?ci_sign=335b5cd3cfe63914107ecf98497f5a0e56bc651d
IXFK88N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Drain current: 88A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Kind of package: tube
Gate charge: 180nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 300V
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFK150N30P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D336DC7D7F5820&compId=IXFK(X)150N30P3.pdf?ci_sign=e1cc3cf21ad8db90ded334fd7d3c224869e18e9c
IXFK150N30P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Drain current: 150A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 300V
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.35 EUR
100+19.56 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFK240N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCD7F081F39820&compId=IXFK(X)240N25X3.pdf?ci_sign=505f1373677b8d12c73e55874fb205a4c2db2269
IXFK240N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; TO264; 177ns
Drain current: 240A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 345nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Reverse recovery time: 177ns
Drain-source voltage: 250V
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+31.69 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFK80N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BB72E5378B7820&compId=IXFK(X)80N50P.pdf?ci_sign=d179f385e73cb0dab5632c8fec26d14e901d5f07
IXFK80N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264
Drain current: 80A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 500V
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.49 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
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