Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFX48N60Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Power dissipation: 1kW Case: PLUS247™ On-state resistance: 0.14Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFL210N30P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 108A Power dissipation: 520W Case: ISOPLUS264™ On-state resistance: 16mΩ Mounting: THT Gate charge: 268nC Kind of channel: enhancement Kind of package: tube |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN210N30X3 | IXYS |
![]() ![]() Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 210A Pulsed drain current: 650A Power dissipation: 695W Case: SOT227B Gate-source voltage: ±20V On-state resistance: 4.6mΩ Gate charge: 375nC Kind of channel: enhancement Reverse recovery time: 190ns Semiconductor structure: single transistor Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFB210N30P3 | IXYS |
![]() Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 210A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: THT Gate charge: 268nC Kind of channel: enhancement Reverse recovery time: 250ns Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFX210N30X3 | IXYS |
![]() ![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 210A Power dissipation: 1.25kW Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 375nC Kind of channel: enhancement Reverse recovery time: 190ns Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFR44N50Q | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 313W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 34A Power dissipation: 313W Case: ISOPLUS247™ On-state resistance: 0.12Ω Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 213 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFR44N50Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 25A Power dissipation: 300W Case: ISOPLUS247™ On-state resistance: 154mΩ Mounting: THT Gate charge: 93nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFH44N50Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 830W Case: TO247-3 On-state resistance: 0.14Ω Mounting: THT Gate charge: 93nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFR44N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 24A Power dissipation: 208W Case: ISOPLUS247™ On-state resistance: 0.15Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFT44N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 650W Case: TO268 On-state resistance: 0.14Ω Mounting: SMD Gate charge: 98nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFT44N50Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 830W Case: TO268 On-state resistance: 0.14Ω Mounting: SMD Gate charge: 93nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTQ44N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 650W Case: TO3P On-state resistance: 0.14Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CPC1965Y | IXYS |
![]() Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase Operating temperature: -40...85°C Max. operating current: 1A Body dimensions: 19.2x6.35x3.3mm Control current max.: 100mA Switched voltage: max. 260V AC Relay variant: 1-phase Insulation voltage: 3.75kV Case: SIP4 Switching method: zero voltage switching Mounting: THT Type of relay: solid state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CPC1963GS | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase Operating temperature: -40...85°C Max. operating current: 0.5A Body dimensions: 9.65x6.35x3.3mm Control current max.: 50mA Switched voltage: max. 600V AC Relay variant: 1-phase Insulation voltage: 3.75kV Case: DIP6 Switching method: zero voltage switching Mounting: SMT Type of relay: solid state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CPC1918J | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC Manufacturer series: OptoMOS Operating temperature: -40...85°C Turn-on time: 25ms Max. operating current: 5250mA Turn-off time: 10ms Body dimensions: 19.91x26.16x5.03mm Control current max.: 100mA On-state resistance: 0.1Ω Switched voltage: max. 100V AC; max. 100V DC Relay variant: 1-phase; current source Insulation voltage: 2.5kV Case: ISOPLUS264™ Kind of output: MOSFET Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CPC1979J | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC Manufacturer series: OptoMOS Operating temperature: -40...85°C Turn-on time: 25ms Max. operating current: 1.4A Turn-off time: 5ms Body dimensions: 19.91x26.16x5.03mm Control current max.: 100mA On-state resistance: 0.75Ω Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source Insulation voltage: 2.5kV Case: ISOPLUS264™ Kind of output: MOSFET Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CPC1976YX6 | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.600VAC; 1-phase Operating temperature: -40...85°C Turn-on time: 500µs Max. operating current: 2A Body dimensions: 21.08x10.16x3.3mm Control current max.: 50mA Switched voltage: max. 600V AC Relay variant: 1-phase Insulation voltage: 3.75kV Case: SIP4 Switching method: zero voltage switching Mounting: THT Type of relay: solid state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CPC1964BX6 | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.600VAC; 1-phase Operating temperature: -40...85°C Max. operating current: 1.5A Body dimensions: 21.08x16.76x3.3mm Control current max.: 50mA Switched voltage: max. 600V AC Relay variant: 1-phase Insulation voltage: 5kV Case: SO8 Switching method: zero voltage switching Mounting: SMT Type of relay: solid state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
DPG60C300PC-TRL | IXYS |
![]() Description: Diode: rectifying; SMD; 300V; 30Ax2; 35ns; TO263AB; Ufmax: 1.66V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 30A x2 Reverse recovery time: 35ns Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Case: TO263AB Max. forward voltage: 1.66V Max. forward impulse current: 360A Power dissipation: 175W Technology: HiPerFRED™ Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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CPC5712U | IXYS |
![]() Description: IC: driver; SOP16; -500÷500uA; 3÷5.5V Type of integrated circuit: driver Case: SOP16 Output current: -500...500µA Mounting: SMD Operating temperature: -40...85°C Supply voltage: 3...5.5V |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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LF2304NTR | IXYS |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 10...20V Voltage class: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DSEP12-12A | IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 12A Reverse recovery time: 40ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO220AC Max. forward voltage: 1.87V Max. forward impulse current: 90A Power dissipation: 95W Technology: HiPerFRED™ Kind of package: tube Heatsink thickness: 1.14...1.39mm |
auf Bestellung 123 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEP12-12AZ-TUB | IXYS |
![]() Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; TO263ABHV; Ufmax: 1.87V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 12A Reverse recovery time: 40ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO263ABHV Max. forward voltage: 1.87V Max. forward impulse current: 90A Power dissipation: 95W Technology: HiPerFRED™ Kind of package: tube |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDD609D2TR | IXYS |
![]() Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V Supply voltage: 4.5...35V Case: DFN8 Kind of output: non-inverting Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Output current: -9...9A Turn-off time: 105ns Turn-on time: 115ns Number of channels: 1 Kind of integrated circuit: gate driver; low-side Type of integrated circuit: driver |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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IX4428MTR | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2 Supply voltage: 4.5...30V Case: DFN8 Kind of output: inverting; non-inverting Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Output current: -1.5...1.5A Number of channels: 2 Kind of integrated circuit: low-side; MOSFET gate driver Type of integrated circuit: driver |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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MDD142-14N1 | IXYS |
![]() ![]() Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 165A Case: Y4-M6 Max. forward voltage: 1.05V Max. forward impulse current: 4.7kA Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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LCA125L | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC Mounting: THT Manufacturer series: OptoMOS Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Relay variant: 1-phase; current source Turn-off time: 5ms Control current max.: 50mA Turn-on time: 5ms Max. operating current: 0.17A On-state resistance: 16Ω Switched voltage: max. 300V AC; max. 300V DC Insulation voltage: 3.75kV Case: DIP6 Kind of output: MOSFET Type of relay: solid state Contacts configuration: SPST-NO |
auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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LAA125L | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Mounting: THT Manufacturer series: OptoMOS Body dimensions: 9.66x6.35x3.3mm Operating temperature: -40...85°C Relay variant: 1-phase; current source Turn-off time: 5ms Control current max.: 50mA Turn-on time: 5ms Max. operating current: 0.17A On-state resistance: 16Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Case: DIP8 Kind of output: MOSFET Type of relay: solid state Contacts configuration: SPST-NO x2 |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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LAA125P | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Mounting: SMT Manufacturer series: OptoMOS Body dimensions: 9.66x6.35x2.16mm Operating temperature: -40...85°C Relay variant: 1-phase; current source Turn-off time: 5ms Control current max.: 50mA Turn-on time: 5ms Max. operating current: 0.17A On-state resistance: 16Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Case: DIP8 Kind of output: MOSFET Type of relay: solid state Contacts configuration: SPST-NO x2 |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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MDD142-18N1 | IXYS |
![]() ![]() Description: Module: diode; double series; 1.8kV; If: 165A; Y4-M6; Ufmax: 1.05V Electrical mounting: screw Type of semiconductor module: diode Semiconductor structure: double series Mechanical mounting: screw Case: Y4-M6 Max. forward voltage: 1.05V Load current: 165A Max. off-state voltage: 1.8kV Max. forward impulse current: 4.7kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IXFP14N85XM | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns Mounting: THT Polarisation: unipolar Gate charge: 30nC Reverse recovery time: 116ns On-state resistance: 0.55Ω Drain current: 14A Power dissipation: 38W Drain-source voltage: 850V Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO220FP Kind of package: tube Features of semiconductor devices: ultra junction x-class |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP14N60P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB Mounting: THT Polarisation: unipolar Gate charge: 36nC On-state resistance: 0.55Ω Drain current: 14A Power dissipation: 300W Drain-source voltage: 600V Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO220AB Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFP14N85X | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO220AB; 116ns Mounting: THT Polarisation: unipolar Gate charge: 30nC Reverse recovery time: 116ns On-state resistance: 0.55Ω Drain current: 14A Power dissipation: 460W Drain-source voltage: 850V Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO220AB Kind of package: tube Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTA2N100P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Power dissipation: 86W Case: TO263 Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 800ns |
auf Bestellung 293 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTY2N100P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Power dissipation: 86W Case: TO252 Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 800ns |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFR32N100Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 23A Power dissipation: 570W Case: ISOPLUS247™ On-state resistance: 0.35Ω Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1301G | IXYS |
![]() Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; DIP4; 250mV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV Case: DIP4 Turn-on time: 1µs Turn-off time: 60µs Max. off-state voltage: 5V Trigger current: 50mA Slew rate: 0.25V/μs CTR@If: 1000-8000%@1mA |
auf Bestellung 418 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP2N100P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Power dissipation: 86W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 800ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFR32N100P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 320W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 18A Power dissipation: 320W Case: ISOPLUS247™ On-state resistance: 0.34Ω Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFK32N100P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 32A Power dissipation: 960W Case: TO264 On-state resistance: 0.32Ω Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFN32N100Q3 | IXYS |
![]() Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 28A Pulsed drain current: 96A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.32Ω Gate charge: 195nC Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTH12N100L | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Power dissipation: 400W Case: TO247-3 On-state resistance: 1.3Ω Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 1µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFK32N100Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 32A Power dissipation: 1.25kW Case: TO264 On-state resistance: 0.32Ω Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFK52N100X | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 52A Power dissipation: 1.25kW Case: TO264 On-state resistance: 0.125Ω Mounting: THT Gate charge: 245nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 260ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFN32N100P | IXYS |
![]() Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 27A Pulsed drain current: 75A Power dissipation: 690W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.32Ω Gate charge: 225nC Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFN52N100X | IXYS |
![]() Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 44A Pulsed drain current: 100A Power dissipation: 830W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.125Ω Gate charge: 245nC Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 260ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFX32N100P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 32A Power dissipation: 960W Case: PLUS247™ On-state resistance: 0.32Ω Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFX32N100Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 32A Power dissipation: 1.25kW Case: PLUS247™ Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DSS6-0025BS | IXYS |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 25V; 6A; reel,tape; 40W Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 25V Load current: 6A Semiconductor structure: single diode Max. forward voltage: 0.3V Max. forward impulse current: 120A Kind of package: reel; tape Power dissipation: 40W |
auf Bestellung 713 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP02N50D | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.2A Power dissipation: 25W Case: TO220AB On-state resistance: 30Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: depletion Reverse recovery time: 5ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXXH75N60B3D1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 750W Case: TO247-3 Mounting: THT Gate charge: 107nC Kind of package: tube Pulsed collector current: 300A Collector-emitter voltage: 600V Turn-on time: 108ns Turn-off time: 315ns Gate-emitter voltage: ±20V Collector current: 75A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXKH70N60C5 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 70A Power dissipation: 625W Case: TO247-3 On-state resistance: 45mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: super junction coolmos |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXKT70N60C5 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 66A Power dissipation: 540W Case: TO268 On-state resistance: 45mΩ Mounting: SMD Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: super junction coolmos |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CPC1788J | IXYS |
![]() Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS Case: ISOPLUS264™ Manufacturer series: OptoMOS Kind of output: MOSFET Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-off time: 5ms Turn-on time: 20ms Body dimensions: 19.91x26.16x5.03mm Control current max.: 100mA On-state resistance: 1.25Ω Max. operating current: 1.2A Switched voltage: max. 1kV DC Insulation voltage: 2.5kV Relay variant: current source |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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PBA150 | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 7Ω Mounting: THT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 2.5ms Turn-off time: 2.5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
PBA150STR | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 7Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 2.5ms Turn-off time: 2.5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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DSEP29-12A | IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO220AC; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 200A Case: TO220AC Max. forward voltage: 1.81V Power dissipation: 165W Reverse recovery time: 40ns Technology: HiPerFRED™ |
auf Bestellung 197 Stücke: Lieferzeit 14-21 Tag (e) |
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DSI30-12A | IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO220AC; 160W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.25V Max. forward impulse current: 0.3kA Power dissipation: 160W Kind of package: tube |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
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MDD142-12N1 | IXYS |
![]() ![]() Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V Type of semiconductor module: diode Semiconductor structure: double series Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.05V Load current: 165A Max. forward impulse current: 4.7kA Max. off-state voltage: 1.2kV Case: Y4-M6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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DMA30P1600HR | IXYS |
![]() Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; ISO247™; 115W Kind of package: tube Case: ISO247™ Semiconductor structure: double series Type of diode: rectifying Mounting: THT Max. forward voltage: 1.23V Power dissipation: 115W Max. forward impulse current: 255A Load current: 30A Max. off-state voltage: 1.6kV |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFX48N60Q3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFL210N30P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 268nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 268nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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1+ | 71.5 EUR |
IXFN210N30X3 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Pulsed drain current: 650A
Power dissipation: 695W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 190ns
Semiconductor structure: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Pulsed drain current: 650A
Power dissipation: 695W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 190ns
Semiconductor structure: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFB210N30P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: THT
Gate charge: 268nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: THT
Gate charge: 268nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX210N30X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 190ns
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 190ns
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFR44N50Q |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 313W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 313W
Case: ISOPLUS247™
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 313W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 313W
Case: ISOPLUS247™
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 213 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 22.06 EUR |
30+ | 21.88 EUR |
120+ | 21.22 EUR |
IXFR44N50Q3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFH44N50Q3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFR44N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFT44N50P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFT44N50Q3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ44N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1965Y |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 1A
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 260V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: SIP4
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 1A
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 260V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: SIP4
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1963GS |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Switched voltage: max. 600V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Switched voltage: max. 600V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1918J |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 25ms
Max. operating current: 5250mA
Turn-off time: 10ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
On-state resistance: 0.1Ω
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: ISOPLUS264™
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 25ms
Max. operating current: 5250mA
Turn-off time: 10ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
On-state resistance: 0.1Ω
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: ISOPLUS264™
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1979J |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 25ms
Max. operating current: 1.4A
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
On-state resistance: 0.75Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: ISOPLUS264™
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 25ms
Max. operating current: 1.4A
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
On-state resistance: 0.75Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: ISOPLUS264™
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Produkt ist nicht verfügbar
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CPC1976YX6 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Turn-on time: 500µs
Max. operating current: 2A
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Switched voltage: max. 600V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: SIP4
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Turn-on time: 500µs
Max. operating current: 2A
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Switched voltage: max. 600V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: SIP4
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
Produkt ist nicht verfügbar
Im Einkaufswagen
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CPC1964BX6 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 1.5A
Body dimensions: 21.08x16.76x3.3mm
Control current max.: 50mA
Switched voltage: max. 600V AC
Relay variant: 1-phase
Insulation voltage: 5kV
Case: SO8
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 1.5A
Body dimensions: 21.08x16.76x3.3mm
Control current max.: 50mA
Switched voltage: max. 600V AC
Relay variant: 1-phase
Insulation voltage: 5kV
Case: SO8
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DPG60C300PC-TRL |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 30Ax2; 35ns; TO263AB; Ufmax: 1.66V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 30A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.66V
Max. forward impulse current: 360A
Power dissipation: 175W
Technology: HiPerFRED™
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 30Ax2; 35ns; TO263AB; Ufmax: 1.66V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 30A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.66V
Max. forward impulse current: 360A
Power dissipation: 175W
Technology: HiPerFRED™
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC5712U |
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Hersteller: IXYS
Category: Drivers - integrated circuits
Description: IC: driver; SOP16; -500÷500uA; 3÷5.5V
Type of integrated circuit: driver
Case: SOP16
Output current: -500...500µA
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Category: Drivers - integrated circuits
Description: IC: driver; SOP16; -500÷500uA; 3÷5.5V
Type of integrated circuit: driver
Case: SOP16
Output current: -500...500µA
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.23 EUR |
36+ | 2.03 EUR |
58+ | 1.24 EUR |
61+ | 1.19 EUR |
500+ | 1.13 EUR |
LF2304NTR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DSEP12-12A |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 123 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 3.98 EUR |
34+ | 2.13 EUR |
36+ | 2.02 EUR |
100+ | 1.93 EUR |
DSEP12-12AZ-TUB |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; TO263ABHV; Ufmax: 1.87V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; TO263ABHV; Ufmax: 1.87V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.66 EUR |
22+ | 3.27 EUR |
28+ | 2.62 EUR |
29+ | 2.47 EUR |
IXDD609D2TR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Supply voltage: 4.5...35V
Case: DFN8
Kind of output: non-inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -9...9A
Turn-off time: 105ns
Turn-on time: 115ns
Number of channels: 1
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Supply voltage: 4.5...35V
Case: DFN8
Kind of output: non-inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -9...9A
Turn-off time: 105ns
Turn-on time: 115ns
Number of channels: 1
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
24+ | 2.97 EUR |
IX4428MTR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...30V
Case: DFN8
Kind of output: inverting; non-inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...30V
Case: DFN8
Kind of output: inverting; non-inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Type of integrated circuit: driver
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.3 EUR |
MDD142-14N1 |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LCA125L |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Relay variant: 1-phase; current source
Turn-off time: 5ms
Control current max.: 50mA
Turn-on time: 5ms
Max. operating current: 0.17A
On-state resistance: 16Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Case: DIP6
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Relay variant: 1-phase; current source
Turn-off time: 5ms
Control current max.: 50mA
Turn-on time: 5ms
Max. operating current: 0.17A
On-state resistance: 16Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Case: DIP6
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.08 EUR |
21+ | 3.45 EUR |
22+ | 3.26 EUR |
LAA125L |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Relay variant: 1-phase; current source
Turn-off time: 5ms
Control current max.: 50mA
Turn-on time: 5ms
Max. operating current: 0.17A
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Relay variant: 1-phase; current source
Turn-off time: 5ms
Control current max.: 50mA
Turn-on time: 5ms
Max. operating current: 0.17A
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.75 EUR |
16+ | 4.68 EUR |
17+ | 4.43 EUR |
LAA125P |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Mounting: SMT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
Relay variant: 1-phase; current source
Turn-off time: 5ms
Control current max.: 50mA
Turn-on time: 5ms
Max. operating current: 0.17A
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Mounting: SMT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
Relay variant: 1-phase; current source
Turn-off time: 5ms
Control current max.: 50mA
Turn-on time: 5ms
Max. operating current: 0.17A
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.75 EUR |
17+ | 4.3 EUR |
18+ | 4.08 EUR |
100+ | 3.92 EUR |
MDD142-18N1 |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 165A; Y4-M6; Ufmax: 1.05V
Electrical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.05V
Load current: 165A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 4.7kA
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 165A; Y4-M6; Ufmax: 1.05V
Electrical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.05V
Load current: 165A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 4.7kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP14N85XM |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Mounting: THT
Polarisation: unipolar
Gate charge: 30nC
Reverse recovery time: 116ns
On-state resistance: 0.55Ω
Drain current: 14A
Power dissipation: 38W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Mounting: THT
Polarisation: unipolar
Gate charge: 30nC
Reverse recovery time: 116ns
On-state resistance: 0.55Ω
Drain current: 14A
Power dissipation: 38W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.01 EUR |
14+ | 5.41 EUR |
16+ | 4.72 EUR |
17+ | 4.46 EUR |
IXFP14N60P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Mounting: THT
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 0.55Ω
Drain current: 14A
Power dissipation: 300W
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Mounting: THT
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 0.55Ω
Drain current: 14A
Power dissipation: 300W
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP14N85X |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO220AB; 116ns
Mounting: THT
Polarisation: unipolar
Gate charge: 30nC
Reverse recovery time: 116ns
On-state resistance: 0.55Ω
Drain current: 14A
Power dissipation: 460W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO220AB; 116ns
Mounting: THT
Polarisation: unipolar
Gate charge: 30nC
Reverse recovery time: 116ns
On-state resistance: 0.55Ω
Drain current: 14A
Power dissipation: 460W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTA2N100P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.32 EUR |
25+ | 2.92 EUR |
28+ | 2.63 EUR |
29+ | 2.49 EUR |
50+ | 2.46 EUR |
IXTY2N100P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
IXFR32N100Q3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 41.06 EUR |
3+ | 41.04 EUR |
30+ | 39.47 EUR |
CPC1301G |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; DIP4; 250mV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
Case: DIP4
Turn-on time: 1µs
Turn-off time: 60µs
Max. off-state voltage: 5V
Trigger current: 50mA
Slew rate: 0.25V/μs
CTR@If: 1000-8000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; DIP4; 250mV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
Case: DIP4
Turn-on time: 1µs
Turn-off time: 60µs
Max. off-state voltage: 5V
Trigger current: 50mA
Slew rate: 0.25V/μs
CTR@If: 1000-8000%@1mA
auf Bestellung 418 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.79 EUR |
61+ | 1.17 EUR |
64+ | 1.13 EUR |
68+ | 1.06 EUR |
69+ | 1.04 EUR |
100+ | 1.03 EUR |
IXTP2N100P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFR32N100P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFK32N100P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFN32N100Q3 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 28A
Pulsed drain current: 96A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 195nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 28A
Pulsed drain current: 96A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 195nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXTH12N100L |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFK32N100Q3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFK52N100X |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 245nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 260ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 245nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 260ns
Produkt ist nicht verfügbar
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IXFN32N100P |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 27A
Pulsed drain current: 75A
Power dissipation: 690W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 225nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 27A
Pulsed drain current: 75A
Power dissipation: 690W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 225nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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IXFN52N100X |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Pulsed drain current: 100A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Pulsed drain current: 100A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Produkt ist nicht verfügbar
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IXFX32N100P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFX32N100Q3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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DSS6-0025BS |
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Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 25V; 6A; reel,tape; 40W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 25V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Max. forward impulse current: 120A
Kind of package: reel; tape
Power dissipation: 40W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 25V; 6A; reel,tape; 40W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 25V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Max. forward impulse current: 120A
Kind of package: reel; tape
Power dissipation: 40W
auf Bestellung 713 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
82+ | 0.87 EUR |
114+ | 0.63 EUR |
152+ | 0.47 EUR |
161+ | 0.45 EUR |
IXTP02N50D |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.2A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 5ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.2A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 5ns
Produkt ist nicht verfügbar
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IXXH75N60B3D1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 108ns
Turn-off time: 315ns
Gate-emitter voltage: ±20V
Collector current: 75A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 108ns
Turn-off time: 315ns
Gate-emitter voltage: ±20V
Collector current: 75A
Produkt ist nicht verfügbar
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IXKH70N60C5 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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IXKT70N60C5 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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CPC1788J |
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Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Case: ISOPLUS264™
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 20ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
On-state resistance: 1.25Ω
Max. operating current: 1.2A
Switched voltage: max. 1kV DC
Insulation voltage: 2.5kV
Relay variant: current source
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Case: ISOPLUS264™
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 20ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
On-state resistance: 1.25Ω
Max. operating current: 1.2A
Switched voltage: max. 1kV DC
Insulation voltage: 2.5kV
Relay variant: current source
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 17.3 EUR |
6+ | 12.41 EUR |
25+ | 12.4 EUR |
PBA150 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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PBA150STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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DSEP29-12A |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220AC
Max. forward voltage: 1.81V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220AC
Max. forward voltage: 1.81V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.79 EUR |
20+ | 3.58 EUR |
21+ | 3.52 EUR |
22+ | 3.39 EUR |
50+ | 3.3 EUR |
DSI30-12A |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 0.3kA
Power dissipation: 160W
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 0.3kA
Power dissipation: 160W
Kind of package: tube
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.26 EUR |
37+ | 1.94 EUR |
39+ | 1.84 EUR |
100+ | 1.77 EUR |
MDD142-12N1 |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.05V
Load current: 165A
Max. forward impulse current: 4.7kA
Max. off-state voltage: 1.2kV
Case: Y4-M6
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.05V
Load current: 165A
Max. forward impulse current: 4.7kA
Max. off-state voltage: 1.2kV
Case: Y4-M6
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DMA30P1600HR |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; ISO247™; 115W
Kind of package: tube
Case: ISO247™
Semiconductor structure: double series
Type of diode: rectifying
Mounting: THT
Max. forward voltage: 1.23V
Power dissipation: 115W
Max. forward impulse current: 255A
Load current: 30A
Max. off-state voltage: 1.6kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; ISO247™; 115W
Kind of package: tube
Case: ISO247™
Semiconductor structure: double series
Type of diode: rectifying
Mounting: THT
Max. forward voltage: 1.23V
Power dissipation: 115W
Max. forward impulse current: 255A
Load current: 30A
Max. off-state voltage: 1.6kV
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.41 EUR |
9+ | 8.18 EUR |
10+ | 7.74 EUR |