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MWI150-06A8 IXYS MWI150-06A8.pdf Description: TRANS 16BIY 3-PH 600V 115AMP
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IXTQ64N25P IXTQ64N25P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_64n25p_datasheet.pdf.pdf Description: MOSFET N-CH 250V 64A TO3P
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30+10.23 EUR
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IXGY2N120 IXGY2N120 IXYS 98959.pdf Description: IGBT 1200V 5A 25W TO252AA
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MCC132-16io1 MCC132-16io1 IXYS media?resourcetype=datasheets&itemid=f0f70d98-8170-417b-b7fe-6224cee38257&filename=Littelfuse-Power-Semiconductors-MCC132-16io1-Datasheet Description: THYRISTOR MOD 1600V 2X138A
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
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MMO90-14IO6 MMO90-14IO6 IXYS MMO90-14io6.pdf Description: SCR DUAL CNTRL 1400V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 440A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 38 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 60 A
Voltage - Off State: 1.4 kV
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VUO105-12NO7 IXYS VUO105-12NO7.pdf Description: BRIDGE RECT 3P 1.2KV 140A PWS-C
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VVZB120-12IO2 IXYS VVZB120.pdf Description: 3-PHASE BRIDGE RECT 1600V 120A
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IXTH50P085 IXTH50P085 IXYS IXTH50P085.pdf Description: MOSFET P-CH 85V 50A TO-247AD
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IXBT16N170A IXBT16N170A IXYS littelfuse-discrete-igbts-ixb-16n170a-datasheet?assetguid=0e64b56f-f1db-4402-935e-833c7ae1d9a8 Description: IGBT 1700V 16A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 360 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 15ns/160ns
Switching Energy: 1.2mJ (off)
Test Condition: 1360V, 10A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
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IXSP10N60B2D1 IXSP10N60B2D1 IXYS Description: IGBT PT 600V 20A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/180ns
Switching Energy: 430µJ (off)
Test Condition: 480V, 10A, 30Ohm, 15V
Gate Charge: 17 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 100 W
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IXSA10N60B2D1 IXSA10N60B2D1 IXYS 99193.pdf Description: IGBT 600V 20A 100W TO263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/180ns
Switching Energy: 430µJ (off)
Test Condition: 480V, 10A, 30Ohm, 15V
Gate Charge: 17 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 100 W
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IXSH10N60B2D1 IXSH10N60B2D1 IXYS Description: IGBT PT 600V 20A TO-247AD
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/180ns
Switching Energy: 430µJ (off)
Test Condition: 480V, 10A, 30Ohm, 15V
Gate Charge: 17 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 100 W
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IXSP20N60B2D1 IXSP20N60B2D1 IXYS Description: IGBT PT 600V 35A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/116ns
Switching Energy: 380µJ (off)
Test Condition: 480V, 16A, 10Ohm, 15V
Gate Charge: 33 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 190 W
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IXSA20N60B2D1 IXSA20N60B2D1 IXYS DS99181B(IXSA-IXSP20N60B2D1).pdf Description: IGBT 600V 35A 190W TO263
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IXSH20N60B2D1 IXSH20N60B2D1 IXYS Description: IGBT 600V 35A 190W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/116ns
Switching Energy: 380µJ (off)
Test Condition: 480V, 16A, 10Ohm, 15V
Gate Charge: 33 nC
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 190 W
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IXSQ20N60B2D1 IXSQ20N60B2D1 IXYS 99174.pdf Description: IGBT 600V 35A 190W TO3P
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IXSH30N60B2D1 IXSH30N60B2D1 IXYS littelfuse_discrete_igbts_pt_ixsh30n60b2d1_datasheet.pdf.pdf Description: IGBT 600V 48A 250W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 550µJ (off)
Test Condition: 400V, 24A, 5Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 250 W
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IXST30N60B2D1 IXST30N60B2D1 IXYS littelfuse_discrete_igbts_pt_ixsh30n60b2d1_datasheet.pdf.pdf Description: IGBT 600V 48A 250W TO268
Packaging: Bulk
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 550µJ (off)
Test Condition: 400V, 24A, 5Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 250 W
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IXSH40N60B2D1 IXSH40N60B2D1 IXYS Description: IGBT 600V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
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IXST40N60B2D1 IXST40N60B2D1 IXYS Description: IGBT 600V 48A TO268
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IXZ210N50L IXYS Description: RF MOSFET 50V DE275
Packaging: Tube
Package / Case: 6-SMD Module
Current Rating (Amps): 10A
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 200W
Gain: 16dB
Technology: MOSFET
Supplier Device Package: DE275
Part Status: Obsolete
Voltage - Rated: 500 V
Voltage - Test: 50 V
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IX6R11S6 IX6R11S6 IXYS DS99037.pdf Description: IC GATE DRVR HALF-BRIDGE 18SOIC
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IXFR40N50Q2 IXFR40N50Q2 IXYS IXFR40N50Q2.pdf Description: MOSFET N-CH 500V 29A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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ZY180L350 ZY180L350 IXYS Description: X SERIES KEY PLUG W/WIRE 350MM
Packaging: Bulk
Type: Keyed Gate Cathode Twin Plugs
Part Status: Active
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10+5.01 EUR
250+3.17 EUR
500+2.93 EUR
1000+2.73 EUR
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ZY180R350 ZY180R350 IXYS Description: X SER KEY PLUG W/WIRE 350MM RED
Packaging: Bulk
Type: Keyed Gate Cathode Twin Plugs
Part Status: Active
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MCC19-16io1B MCC19-16io1B IXYS media?resourcetype=datasheets&itemid=55a0be16-ce76-406d-b95f-b29fe14fda15&filename=Littelfuse-Power-Semiconductors-MCC19-16io1B-Datasheet Description: THYRISTOR MODULE 1600V 2X40A
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 420A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 40 A
Voltage - Off State: 1.6 kV
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IXSK35N120AU1 IXSK35N120AU1 IXYS 94526.pdf Description: IGBT 1200V 70A 300W TO264
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
Supplier Device Package: TO-264AA (IXSK)
Td (on/off) @ 25°C: 80ns/400ns
Switching Energy: 10mJ (off)
Test Condition: 960V, 35A, 2.7Ohm, 15V
Gate Charge: 150 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
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VBO25-16AO2 VBO25-16AO2 IXYS VBO25.pdf Description: BRIDGE RECT 1P 1.6KV 38A FO-A
Packaging: Bulk
Package / Case: 4-Square, FO-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Avalanche
Supplier Device Package: FO-A
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 38 A
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 55 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
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IXGX120N60B IXGX120N60B IXYS Littelfuse-Discrete-IGBTs-PT-IXG-120N60B-Datasheet.PDF?assetguid=A076EF5D-7F0A-4278-8A8D-49BFCE52E6BE Description: IGBT PT 600V 200A PLUS247
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/200ns
Switching Energy: 2.4mJ (on), 5.5mJ (off)
Test Condition: 480V, 100A, 2.4Ohm, 15V
Gate Charge: 350 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 660 W
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IXDF402SI IXDF402SI IXYS 99015.pdf Description: DUAL 2AMP ULTRAFAST MOSFET 8SOIC
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MWI200-06A8 IXYS Description: IGBT MODULE 600V 225A 675W E3
Packaging: Bulk
Package / Case: E3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: E3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 675 W
Current - Collector Cutoff (Max): 1.8 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
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IXTH24N50 IXTH24N50 IXYS description Description: MOSFET N-CH 500V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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MCC95-12io8B MCC95-12io8B IXYS media?resourcetype=datasheets&itemid=9c33c466-4be4-4309-ac6a-aa83ccefaffb&filename=Littelfuse-Power-Semiconductors-MCC95-12io8B-Datasheet Description: THYRISTOR MODULE 1200V 2X116A
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 180 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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IXDN414SI IXDN414SI IXYS Description: IC GATE DRVR LOW-SIDE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 22ns, 20ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 14A, 14A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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GWM120-0075P3 IXYS GWM120-0075P3.pdf Description: MOSFET 6N-CH 75V 118A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 118A
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Obsolete
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MDD172-12N1 MDD172-12N1 IXYS MDD172-12N1.pdf Description: DIODE MODULE 1.2KV 190A Y4-M6
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 190A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
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IXTY1R6N50P IXTY1R6N50P IXYS DS99444F(IXTP-TY1R6N50P).pdf Description: MOSFET N-CH 500V 1.6A TO252
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IXTP1R6N50P IXTP1R6N50P IXYS 99444.pdf Description: MOSFET N-CH 500V 1.6A TO-220
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IXTY2R4N50P IXTY2R4N50P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 2.4A TO252
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IXTP2R4N50P IXTP2R4N50P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 2.4A TO220AB
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IXTY3N50P IXTY3N50P IXYS 99200.pdf Description: MOSFET N-CH 500V 3.6A DPAK
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IXTP3N50P IXTP3N50P IXYS 99200.pdf Description: MOSFET N-CH 500V 3.6A TO-220
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IXTA3N50P IXTA3N50P IXYS DS99200F(IXTY-TA-TP3N50P).pdf Description: MOSFET N-CH 500V 3.6A D2PAK
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IXTP5N50P IXTP5N50P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_5n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 4.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.4A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
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IXTA5N50P IXTA5N50P IXYS DS99446G(IXTU-TY-TA-TP5N50P).pdf Description: MOSFET N-CH 500V 4.8A TO263
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IXTP6N50P IXTP6N50P IXYS 99447.pdf Description: MOSFET N-CH 500V 6A TO-220
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IXTA6N50P IXTA6N50P IXYS 99447.pdf Description: MOSFET N-CH 500V 6A D2-PAK
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IXTP8N50P IXTP8N50P IXYS 99321.pdf Description: MOSFET N-CH 500V 8A TO-220
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IXTA8PN50P IXTA8PN50P IXYS Description: MOSFET N-CH 500V 8A D2-PAK
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IXTI12N50P IXYS DS99322F(IXTA-TI-TP12N50P).pdf Description: MOSFET N-CH 500V 12A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
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IXTA16N50P IXTA16N50P IXYS 99323.pdf Description: MOSFET N-CH 500V 16A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
300+4.90 EUR
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IXTV22N50P IXTV22N50P IXYS littelfuse-discrete-mosfets-ixt-22n50p-datasheet?assetguid=aa88a2b6-6037-4575-9c3c-a71212b980d4 Description: MOSFET N-CH 500V 22A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
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IXTV22N50PS IXYS 99351.pdf Description: MOSFET N-CH 500V 22A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
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IXTV26N50P IXTV26N50P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_26n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 26A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
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IXTV26N50PS IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_26n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 26A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
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IXTC26N50P IXTC26N50P IXYS Description: MOSFET N-CH 500V 15A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 13A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
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IXTV30N50P IXTV30N50P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_30n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 30A PLUS220
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IXTV30N50PS IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_30n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 30A PLUS-220SMD
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IXTV36N50P IXTV36N50P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_36n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 36A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
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IXTV36N50PS IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_36n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 36A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
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MWI150-06A8 MWI150-06A8.pdf
Hersteller: IXYS
Description: TRANS 16BIY 3-PH 600V 115AMP
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IXTQ64N25P littelfuse_discrete_mosfets_n-channel_standard_ixt_64n25p_datasheet.pdf.pdf
IXTQ64N25P
Hersteller: IXYS
Description: MOSFET N-CH 250V 64A TO3P
auf Bestellung 840 Stücke:
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Anzahl Preis
30+10.23 EUR
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IXGY2N120 98959.pdf
IXGY2N120
Hersteller: IXYS
Description: IGBT 1200V 5A 25W TO252AA
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MCC132-16io1 media?resourcetype=datasheets&itemid=f0f70d98-8170-417b-b7fe-6224cee38257&filename=Littelfuse-Power-Semiconductors-MCC132-16io1-Datasheet
MCC132-16io1
Hersteller: IXYS
Description: THYRISTOR MOD 1600V 2X138A
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
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MMO90-14IO6 MMO90-14io6.pdf
MMO90-14IO6
Hersteller: IXYS
Description: SCR DUAL CNTRL 1400V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 440A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 38 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 60 A
Voltage - Off State: 1.4 kV
Produkt ist nicht verfügbar
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VUO105-12NO7 VUO105-12NO7.pdf
Hersteller: IXYS
Description: BRIDGE RECT 3P 1.2KV 140A PWS-C
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VVZB120-12IO2 VVZB120.pdf
Hersteller: IXYS
Description: 3-PHASE BRIDGE RECT 1600V 120A
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IXTH50P085 IXTH50P085.pdf
IXTH50P085
Hersteller: IXYS
Description: MOSFET P-CH 85V 50A TO-247AD
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IXBT16N170A littelfuse-discrete-igbts-ixb-16n170a-datasheet?assetguid=0e64b56f-f1db-4402-935e-833c7ae1d9a8
IXBT16N170A
Hersteller: IXYS
Description: IGBT 1700V 16A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 360 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 15ns/160ns
Switching Energy: 1.2mJ (off)
Test Condition: 1360V, 10A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
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IXSP10N60B2D1
IXSP10N60B2D1
Hersteller: IXYS
Description: IGBT PT 600V 20A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/180ns
Switching Energy: 430µJ (off)
Test Condition: 480V, 10A, 30Ohm, 15V
Gate Charge: 17 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 100 W
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IXSA10N60B2D1 99193.pdf
IXSA10N60B2D1
Hersteller: IXYS
Description: IGBT 600V 20A 100W TO263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/180ns
Switching Energy: 430µJ (off)
Test Condition: 480V, 10A, 30Ohm, 15V
Gate Charge: 17 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 100 W
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IXSH10N60B2D1
IXSH10N60B2D1
Hersteller: IXYS
Description: IGBT PT 600V 20A TO-247AD
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/180ns
Switching Energy: 430µJ (off)
Test Condition: 480V, 10A, 30Ohm, 15V
Gate Charge: 17 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 100 W
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IXSP20N60B2D1
IXSP20N60B2D1
Hersteller: IXYS
Description: IGBT PT 600V 35A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/116ns
Switching Energy: 380µJ (off)
Test Condition: 480V, 16A, 10Ohm, 15V
Gate Charge: 33 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 190 W
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IXSA20N60B2D1 DS99181B(IXSA-IXSP20N60B2D1).pdf
IXSA20N60B2D1
Hersteller: IXYS
Description: IGBT 600V 35A 190W TO263
Produkt ist nicht verfügbar
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IXSH20N60B2D1
IXSH20N60B2D1
Hersteller: IXYS
Description: IGBT 600V 35A 190W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/116ns
Switching Energy: 380µJ (off)
Test Condition: 480V, 16A, 10Ohm, 15V
Gate Charge: 33 nC
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 190 W
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IXSQ20N60B2D1 99174.pdf
IXSQ20N60B2D1
Hersteller: IXYS
Description: IGBT 600V 35A 190W TO3P
Produkt ist nicht verfügbar
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IXSH30N60B2D1 littelfuse_discrete_igbts_pt_ixsh30n60b2d1_datasheet.pdf.pdf
IXSH30N60B2D1
Hersteller: IXYS
Description: IGBT 600V 48A 250W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 550µJ (off)
Test Condition: 400V, 24A, 5Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 250 W
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IXST30N60B2D1 littelfuse_discrete_igbts_pt_ixsh30n60b2d1_datasheet.pdf.pdf
IXST30N60B2D1
Hersteller: IXYS
Description: IGBT 600V 48A 250W TO268
Packaging: Bulk
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 550µJ (off)
Test Condition: 400V, 24A, 5Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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IXSH40N60B2D1
IXSH40N60B2D1
Hersteller: IXYS
Description: IGBT 600V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Produkt ist nicht verfügbar
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IXST40N60B2D1
IXST40N60B2D1
Hersteller: IXYS
Description: IGBT 600V 48A TO268
Produkt ist nicht verfügbar
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IXZ210N50L
Hersteller: IXYS
Description: RF MOSFET 50V DE275
Packaging: Tube
Package / Case: 6-SMD Module
Current Rating (Amps): 10A
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 200W
Gain: 16dB
Technology: MOSFET
Supplier Device Package: DE275
Part Status: Obsolete
Voltage - Rated: 500 V
Voltage - Test: 50 V
Produkt ist nicht verfügbar
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IX6R11S6 DS99037.pdf
IX6R11S6
Hersteller: IXYS
Description: IC GATE DRVR HALF-BRIDGE 18SOIC
Produkt ist nicht verfügbar
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IXFR40N50Q2 IXFR40N50Q2.pdf
IXFR40N50Q2
Hersteller: IXYS
Description: MOSFET N-CH 500V 29A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
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ZY180L350
ZY180L350
Hersteller: IXYS
Description: X SERIES KEY PLUG W/WIRE 350MM
Packaging: Bulk
Type: Keyed Gate Cathode Twin Plugs
Part Status: Active
auf Bestellung 2287 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.59 EUR
10+5.01 EUR
250+3.17 EUR
500+2.93 EUR
1000+2.73 EUR
2000+2.71 EUR
Mindestbestellmenge: 3
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ZY180R350
ZY180R350
Hersteller: IXYS
Description: X SER KEY PLUG W/WIRE 350MM RED
Packaging: Bulk
Type: Keyed Gate Cathode Twin Plugs
Part Status: Active
auf Bestellung 24440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.05 EUR
10+4.01 EUR
250+2.71 EUR
Mindestbestellmenge: 3
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MCC19-16io1B media?resourcetype=datasheets&itemid=55a0be16-ce76-406d-b95f-b29fe14fda15&filename=Littelfuse-Power-Semiconductors-MCC19-16io1B-Datasheet
MCC19-16io1B
Hersteller: IXYS
Description: THYRISTOR MODULE 1600V 2X40A
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 420A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 40 A
Voltage - Off State: 1.6 kV
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+42.86 EUR
36+29.81 EUR
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IXSK35N120AU1 94526.pdf
IXSK35N120AU1
Hersteller: IXYS
Description: IGBT 1200V 70A 300W TO264
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
Supplier Device Package: TO-264AA (IXSK)
Td (on/off) @ 25°C: 80ns/400ns
Switching Energy: 10mJ (off)
Test Condition: 960V, 35A, 2.7Ohm, 15V
Gate Charge: 150 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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VBO25-16AO2 VBO25.pdf
VBO25-16AO2
Hersteller: IXYS
Description: BRIDGE RECT 1P 1.6KV 38A FO-A
Packaging: Bulk
Package / Case: 4-Square, FO-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Avalanche
Supplier Device Package: FO-A
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 38 A
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 55 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
Produkt ist nicht verfügbar
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IXGX120N60B Littelfuse-Discrete-IGBTs-PT-IXG-120N60B-Datasheet.PDF?assetguid=A076EF5D-7F0A-4278-8A8D-49BFCE52E6BE
IXGX120N60B
Hersteller: IXYS
Description: IGBT PT 600V 200A PLUS247
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/200ns
Switching Energy: 2.4mJ (on), 5.5mJ (off)
Test Condition: 480V, 100A, 2.4Ohm, 15V
Gate Charge: 350 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 660 W
Produkt ist nicht verfügbar
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IXDF402SI 99015.pdf
IXDF402SI
Hersteller: IXYS
Description: DUAL 2AMP ULTRAFAST MOSFET 8SOIC
Produkt ist nicht verfügbar
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MWI200-06A8
Hersteller: IXYS
Description: IGBT MODULE 600V 225A 675W E3
Packaging: Bulk
Package / Case: E3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: E3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 675 W
Current - Collector Cutoff (Max): 1.8 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Produkt ist nicht verfügbar
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IXTH24N50 description
IXTH24N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
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MCC95-12io8B media?resourcetype=datasheets&itemid=9c33c466-4be4-4309-ac6a-aa83ccefaffb&filename=Littelfuse-Power-Semiconductors-MCC95-12io8B-Datasheet
MCC95-12io8B
Hersteller: IXYS
Description: THYRISTOR MODULE 1200V 2X116A
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 180 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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IXDN414SI
IXDN414SI
Hersteller: IXYS
Description: IC GATE DRVR LOW-SIDE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 22ns, 20ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 14A, 14A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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GWM120-0075P3 GWM120-0075P3.pdf
Hersteller: IXYS
Description: MOSFET 6N-CH 75V 118A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 118A
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Obsolete
Produkt ist nicht verfügbar
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MDD172-12N1 MDD172-12N1.pdf
MDD172-12N1
Hersteller: IXYS
Description: DIODE MODULE 1.2KV 190A Y4-M6
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 190A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Produkt ist nicht verfügbar
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IXTY1R6N50P DS99444F(IXTP-TY1R6N50P).pdf
IXTY1R6N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 1.6A TO252
Produkt ist nicht verfügbar
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IXTP1R6N50P 99444.pdf
IXTP1R6N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 1.6A TO-220
Produkt ist nicht verfügbar
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IXTY2R4N50P littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n50p_datasheet.pdf.pdf
IXTY2R4N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 2.4A TO252
Produkt ist nicht verfügbar
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IXTP2R4N50P littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n50p_datasheet.pdf.pdf
IXTP2R4N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 2.4A TO220AB
Produkt ist nicht verfügbar
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IXTY3N50P 99200.pdf
IXTY3N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 3.6A DPAK
Produkt ist nicht verfügbar
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IXTP3N50P 99200.pdf
IXTP3N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 3.6A TO-220
Produkt ist nicht verfügbar
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IXTA3N50P DS99200F(IXTY-TA-TP3N50P).pdf
IXTA3N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 3.6A D2PAK
Produkt ist nicht verfügbar
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IXTP5N50P littelfuse_discrete_mosfets_n-channel_standard_ixt_5n50p_datasheet.pdf.pdf
IXTP5N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 4.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.4A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA5N50P DS99446G(IXTU-TY-TA-TP5N50P).pdf
IXTA5N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 4.8A TO263
Produkt ist nicht verfügbar
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IXTP6N50P 99447.pdf
IXTP6N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 6A TO-220
Produkt ist nicht verfügbar
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IXTA6N50P 99447.pdf
IXTA6N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 6A D2-PAK
Produkt ist nicht verfügbar
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IXTP8N50P 99321.pdf
IXTP8N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 8A TO-220
Produkt ist nicht verfügbar
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IXTA8PN50P
IXTA8PN50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 8A D2-PAK
Produkt ist nicht verfügbar
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IXTI12N50P DS99322F(IXTA-TI-TP12N50P).pdf
Hersteller: IXYS
Description: MOSFET N-CH 500V 12A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA16N50P 99323.pdf
IXTA16N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 16A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
300+4.90 EUR
Mindestbestellmenge: 300
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IXTV22N50P littelfuse-discrete-mosfets-ixt-22n50p-datasheet?assetguid=aa88a2b6-6037-4575-9c3c-a71212b980d4
IXTV22N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 22A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
Produkt ist nicht verfügbar
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IXTV22N50PS 99351.pdf
Hersteller: IXYS
Description: MOSFET N-CH 500V 22A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
Produkt ist nicht verfügbar
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IXTV26N50P littelfuse_discrete_mosfets_n-channel_standard_ixt_26n50p_datasheet.pdf.pdf
IXTV26N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 26A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Produkt ist nicht verfügbar
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IXTV26N50PS littelfuse_discrete_mosfets_n-channel_standard_ixt_26n50p_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 500V 26A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Produkt ist nicht verfügbar
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IXTC26N50P
IXTC26N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 15A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 13A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
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IXTV30N50P littelfuse_discrete_mosfets_n-channel_standard_ixt_30n50p_datasheet.pdf.pdf
IXTV30N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A PLUS220
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IXTV30N50PS littelfuse_discrete_mosfets_n-channel_standard_ixt_30n50p_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A PLUS-220SMD
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IXTV36N50P littelfuse_discrete_mosfets_n-channel_standard_ixt_36n50p_datasheet.pdf.pdf
IXTV36N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 36A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
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IXTV36N50PS littelfuse_discrete_mosfets_n-channel_standard_ixt_36n50p_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 500V 36A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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