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IXGH32N170A IXGH32N170A IXYS littelfuse-discrete-igbts-ixg-32n170a-datasheet?assetguid=d6218b48-3b70-437b-8aef-ba46846c5faf Description: IGBT NPT 1700V 32A TO-247AD
Test Condition: 850V, 32A, 2.7Ohm, 15V
Switching Energy: 1.5mJ (off)
Td (on/off) @ 25°C: 46ns/260ns
IGBT Type: NPT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 350 W
Current - Collector Pulsed (Icm): 110 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 32 A
Part Status: Active
Gate Charge: 155 nC
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IXBH16N170A IXBH16N170A IXYS littelfuse-discrete-igbts-ixb-16n170a-datasheet?assetguid=0e64b56f-f1db-4402-935e-833c7ae1d9a8 Description: IGBT 1700V 16A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 360 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/160ns
Switching Energy: 1.2mJ (off)
Test Condition: 1360V, 10A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
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VUE75-12NO7 IXYS ee0cd6e2-94ad-4a36-91cc-fb053843982e.pdf Description: BRIDGE RECT 3P 1.2KV 74A ECOPAC1
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ME0500-06DA ME0500-06DA IXYS Description: DIODE GEN PURP 600V 514A Y4-M6
Current - Reverse Leakage @ Vr: 24 mA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: Y4-M6
Current - Average Rectified (Io): 514A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Packaging: Bulk
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IXFN27N80 IXFN27N80 IXYS Description: MOSFET N-CH 800V 27A SOT-227B
Input Capacitance (Ciss) (Max) @ Vds: 9740 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Part Status: Not For New Designs
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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IXFX55N50F IXFX55N50F IXYS Description: MOSFET N-CH 500V 55A PLUS247-3
Rds On (Max) @ Id, Vgs: 85mOhm @ 27.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Power Dissipation (Max): 560W (Tc)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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VU068-08N07 IXYS Description: BRIDGE RECT 3P 800V 68A MODULE
Current - Reverse Leakage @ Vr: 500 µA @ 800 V
Current - Average Rectified (Io): 68 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: Module
Technology: Standard
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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MCC161-22IO1 MCC161-22IO1 IXYS media?resourcetype=datasheets&itemid=398a0afc-614f-4ceb-af57-781f5b6271d1&filename=Littelfuse-Power-Semiconductors-MCC161-22io1-Datasheet Description: THERISTER MODULE 2200V
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 165 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 2.2 kV
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IXLF19N250A IXLF19N250A IXYS IXLF19N250A.pdf Description: IGBT NPT 2500V 32A ISOPLUS I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 19A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Switching Energy: 15mJ (on), 30mJ (off)
Test Condition: 1500V, 19A, 47Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 250 W
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MDI 300-12 A4 IXYS MII300-12A4_MID300-12A4_MDI300-12A4.pdf Description: TRANS IGBT PWR MODULE 1.2KV 330A
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MEE 300-06DA IXYS 96512.pdf Description: DIODE MODULE 600V 304A Y4-M6
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IXFH40N50Q IXFH40N50Q IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH40N50Q-Datasheet.PDF?assetguid=0EC5A491-CE9E-432F-BDFD-54CFAC252C8F Description: MOSFET N-CH 500V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
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HTZ270H48K IXYS HTZ270H_series.pdf Description: DIODE MODULE GP 48000V 3.4A
Current - Reverse Leakage @ Vr: 500 µA @ 48000 V
Voltage - Forward (Vf) (Max) @ If: 46 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 48000 V
Supplier Device Package: Module
Current - Average Rectified (Io) (per Diode): 3.4A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
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IXGN60N60 IXYS Description: IGBT MOD 600V 100A 250W SOT-227B
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
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MCC250-18io1 MCC250-18io1 IXYS MCC,MCD_250.pdf Description: THYRISTOR DUAL 1800V 450A
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DSEE30-12A DSEE30-12A IXYS DSEE30-12A.PDF Description: DIODE ARRAY GP 1200V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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DSDI60-16A DSDI60-16A IXYS Littelfuse-Power-Semiconductors-DSDI60-18A-Datasheet?assetguid=8d7ea8e6-2ef8-4cef-a969-dabf5d801133 Description: DIODE STANDARD 1600V 63A TO247AD
Current - Reverse Leakage @ Vr: 2 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 4.1 V @ 70 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 63A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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MCC310-16io1 MCC310-16io1 IXYS MCC310%2CMCD310.pdf Description: SCR MODULE 1.6KV 500A Y2-DCB
Packaging: Bulk
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 500 A
Voltage - Off State: 1.6 kV
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VUO50-08NO3 VUO50-08NO3 IXYS VUO50.pdf Description: BRIDGE RECT 3P 800V 58A FO-F-B
Packaging: Bulk
Package / Case: FO-F-B
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: FO-F-B
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 58 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 800 V
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IXDN430MYI IXDN430MYI IXYS Description: IC GATE DRVR LOW-SIDE TO263
Packaging: Box
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 8.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: TO-263-5
Rise / Fall Time (Typ): 18ns, 16ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 30A, 30A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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VUO82-16NO7 VUO82-16NO7 IXYS VUO62%2CVU082.pdf Description: BRIDGE RECT 3P 1.6KV 88A PWS-D
Packaging: Bulk
Package / Case: PWS-D
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 88 A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
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IXTA3N120 IXTA3N120 IXYS littelfuse-discrete-mosfets-ixta3n120-datasheet?assetguid=0f8a2134-6aa0-4538-a4e2-9a575d3790e6 Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
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VBO130-08NO7 VBO130-08NO7 IXYS Littelfuse-Power-Semiconductors-VBO130-08NO7-Datasheet?assetguid=32B57B06-D8AF-4BF1-AD92-374C314205BE Description: BRIDGE RECT 1P 800V 122A PWS-E
Current - Reverse Leakage @ Vr: 200 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A
Current - Average Rectified (Io): 122 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: PWS-E
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Chassis Mount
Package / Case: PWS-E
Packaging: Bulk
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IXFT13N100 IXFT13N100 IXYS IXFT13N100%2C%2012N.pdf Description: MOSFET N-CH 1000V 12.5A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
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IXDI402SI IXDI402SI IXYS Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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FII40-06D FII40-06D IXYS FII40-06D.pdf Description: IGBT H BRIDGE 600V 40A I4PAK5
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MCC312-16io1 MCC312-16io1 IXYS Littelfuse-Power-Semiconductors-MCC312-16io1-Datasheet?assetguid=e89527f6-52af-4349-a7ba-66bfa2dd339a Description: SCR MODULE 1.6KV 520A Y1-CU
Packaging: Bulk
Package / Case: Y1-CU
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 10100A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
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DSA9-16F DSA9-16F IXYS DSA9.pdf Description: DIODE AVALANCHE 1.6KV 11A DO203
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IXDD409YI IXDD409YI IXYS Description: IC GATE DRVR LOW-SIDE TO263
Rise / Fall Time (Typ): 10ns, 10ns
Supplier Device Package: TO-263-5
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 35V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Packaging: Tube
Part Status: Obsolete
Current - Peak Output (Source, Sink): 9A, 9A
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
DigiKey Programmable: Not Verified
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IXGH45N120 IXGH45N120 IXYS littelfuse_discrete_igbts_pt_ixgh45n120_datasheet.pdf.pdf Description: IGBT 1200V 75A 300W TO247
Part Status: Active
Gate Charge: 170 nC
Test Condition: 960V, 45A, 5Ohm, 15V
Switching Energy: 14mJ (off)
Td (on/off) @ 25°C: 55ns/370ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 45A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Power - Max: 300 W
Current - Collector Pulsed (Icm): 180 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
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IXGH60N60 IXYS Description: IGBT PT 600V 75A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/300ns
Switching Energy: 8mJ (off)
Test Condition: 480V, 60A, 2.7Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
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IX6R11S3 IX6R11S3 IXYS DS99037.pdf Description: IC GATE DRVR HALF-BRIDGE 16SOIC
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MCC26-14io1B MCC26-14io1B IXYS media?resourcetype=datasheets&itemid=db47a66a-a2da-403b-9630-c03f3e36ff6c&filename=Littelfuse-Power-Semiconductors-MCC26-14io1B-Datasheet Description: DUL THYRIS MOD 800-2200V 19-320A
Voltage - Off State: 1.4 kV
Current - On State (It (RMS)) (Max): 50 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 32 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Bulk
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MWI150-06A8 IXYS Description: IGBT MODULE 600V 170A 515W E3
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Current - Collector Cutoff (Max): 1.5 mA
Power - Max: 515 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 170 A
IGBT Type: NPT
Supplier Device Package: E3
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Bulk
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IXTQ64N25P IXTQ64N25P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_64n25p_datasheet.pdf.pdf Description: MOSFET N-CH 250V 64A TO3P
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IXGY2N120 IXGY2N120 IXYS 98959.pdf Description: IGBT 1200V 5A 25W TO252AA
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MCC132-16io1 MCC132-16io1 IXYS media?resourcetype=datasheets&itemid=f0f70d98-8170-417b-b7fe-6224cee38257&filename=Littelfuse-Power-Semiconductors-MCC132-16io1-Datasheet Description: THYRISTOR MOD 1600V 2X138A
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 300 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 130 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
Current - Gate Trigger (Igt) (Max): 150 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Packaging: Bulk
Current - Hold (Ih) (Max): 200 mA
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MMO90-14IO6 MMO90-14IO6 IXYS MMO90-14io6.pdf Description: SCR DUAL CNTRL 1400V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 440A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 38 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 60 A
Voltage - Off State: 1.4 kV
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VUO105-12NO7 IXYS VUO105-12NO7.pdf Description: BRIDGE RECT 3P 1.2KV 140A PWS-C
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VVZB120-12IO2 IXYS VVZB120.pdf Description: 3-PHASE BRIDGE RECT 1600V 120A
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IXTH50P085 IXTH50P085 IXYS IXTH50P085.pdf Description: MOSFET P-CH 85V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXBT16N170A IXBT16N170A IXYS littelfuse-discrete-igbts-ixb-16n170a-datasheet?assetguid=0e64b56f-f1db-4402-935e-833c7ae1d9a8 Description: IGBT 1700V 16A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 360 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 15ns/160ns
Switching Energy: 1.2mJ (off)
Test Condition: 1360V, 10A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
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IXSP10N60B2D1 IXSP10N60B2D1 IXYS Description: IGBT PT 600V 20A TO-220-3
Power - Max: 100 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Part Status: Obsolete
Gate Charge: 17 nC
Test Condition: 480V, 10A, 30Ohm, 15V
Switching Energy: 430µJ (off)
Td (on/off) @ 25°C: 30ns/180ns
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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IXSA10N60B2D1 IXSA10N60B2D1 IXYS 99193.pdf Description: IGBT 600V 20A 100W TO263
Power - Max: 100 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Gate Charge: 17 nC
Test Condition: 480V, 10A, 30Ohm, 15V
Switching Energy: 430µJ (off)
Td (on/off) @ 25°C: 30ns/180ns
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
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IXSH10N60B2D1 IXSH10N60B2D1 IXYS Description: IGBT PT 600V 20A TO-247AD
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Gate Charge: 17 nC
Test Condition: 480V, 10A, 30Ohm, 15V
Switching Energy: 430µJ (off)
Td (on/off) @ 25°C: 30ns/180ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Box
Power - Max: 100 W
Current - Collector Pulsed (Icm): 30 A
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IXSP20N60B2D1 IXYS Description: IGBT PT 600V 35A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/116ns
Switching Energy: 380µJ (off)
Test Condition: 480V, 16A, 10Ohm, 15V
Gate Charge: 33 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 190 W
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IXSA20N60B2D1 IXSA20N60B2D1 IXYS Description: IGBT PT 600V 35A TO-263AA
Power - Max: 190 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 35 A
Gate Charge: 33 nC
Test Condition: 480V, 16A, 10Ohm, 15V
Switching Energy: 380µJ (off)
Td (on/off) @ 25°C: 30ns/116ns
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Box
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IXSH20N60B2D1 IXYS Description: IGBT PT 600V 35A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/116ns
Switching Energy: 380µJ (off)
Test Condition: 480V, 16A, 10Ohm, 15V
Gate Charge: 33 nC
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 190 W
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IXSQ20N60B2D1 IXSQ20N60B2D1 IXYS Description: IGBT PT 600V 35A TO-3P
Current - Collector (Ic) (Max): 35 A
Gate Charge: 33 nC
Switching Energy: 380µJ (off)
Td (on/off) @ 25°C: 30ns/116ns
IGBT Type: PT
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Bulk
Power - Max: 190 W
Voltage - Collector Emitter Breakdown (Max): 600 V
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IXSH30N60B2D1 IXSH30N60B2D1 IXYS Description: IGBT PT 600V 48A TO-247AD
Power - Max: 250 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Gate Charge: 50 nC
Test Condition: 400V, 24A, 5Ohm, 15V
Switching Energy: 550µJ (off)
Td (on/off) @ 25°C: 30ns/130ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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IXST30N60B2D1 IXST30N60B2D1 IXYS littelfuse_discrete_igbts_pt_ixsh30n60b2d1_datasheet.pdf.pdf Description: IGBT 600V 48A 250W TO268
Power - Max: 250 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Gate Charge: 50 nC
Test Condition: 400V, 24A, 5Ohm, 15V
Switching Energy: 550µJ (off)
Td (on/off) @ 25°C: 30ns/130ns
IGBT Type: PT
Supplier Device Package: TO-268AA
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Bulk
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IXSH40N60B2D1 IXSH40N60B2D1 IXYS Description: IGBT 600V 48A TO247
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Part Status: Obsolete
IGBT Type: PT
Supplier Device Package: TO-247AD
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IXST40N60B2D1 IXST40N60B2D1 IXYS Description: IGBT 600V 48A TO268
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IXZ210N50L IXYS Description: RF MOSFET 50V DE275
Voltage - Test: 50 V
Voltage - Rated: 500 V
Part Status: Obsolete
Supplier Device Package: DE275
Technology: MOSFET
Gain: 16dB
Power - Output: 200W
Configuration: N-Channel
Frequency: 175MHz
Current Rating (Amps): 10A
Package / Case: 6-SMD Module
Packaging: Tube
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IX6R11S6 IX6R11S6 IXYS DS99037.pdf Description: IC GATE DRVR HALF-BRIDGE 18SOIC
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IXFR40N50Q2 IXFR40N50Q2 IXYS IXFR40N50Q2.pdf Description: MOSFET N-CH 500V 29A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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ZY180L350 IXYS Description: X SERIES KEY PLUG W/WIRE 350MM
Part Status: Active
Type: Keyed Gate Cathode Twin Plugs
Packaging: Bulk
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ZY180R350 IXYS Description: X SER KEY PLUG W/WIRE 350MM RED
Part Status: Active
Type: Keyed Gate Cathode Twin Plugs
Packaging: Bulk
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MCC19-16io1B MCC19-16io1B IXYS media?resourcetype=datasheets&itemid=55a0be16-ce76-406d-b95f-b29fe14fda15&filename=Littelfuse-Power-Semiconductors-MCC19-16io1B-Datasheet Description: THYRISTOR MODULE 1600V 2X40A
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 40 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 25 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 420A
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Bulk
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IXSK35N120AU1 IXSK35N120AU1 IXYS 94526.pdf Description: IGBT 1200V 70A 300W TO264
Supplier Device Package: TO-264AA (IXSK)
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Bulk
Power - Max: 300 W
Current - Collector Pulsed (Icm): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 70 A
Part Status: Obsolete
Gate Charge: 150 nC
Test Condition: 960V, 35A, 2.7Ohm, 15V
Switching Energy: 10mJ (off)
Td (on/off) @ 25°C: 80ns/400ns
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IXGH32N170A littelfuse-discrete-igbts-ixg-32n170a-datasheet?assetguid=d6218b48-3b70-437b-8aef-ba46846c5faf
IXGH32N170A
Hersteller: IXYS
Description: IGBT NPT 1700V 32A TO-247AD
Test Condition: 850V, 32A, 2.7Ohm, 15V
Switching Energy: 1.5mJ (off)
Td (on/off) @ 25°C: 46ns/260ns
IGBT Type: NPT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 350 W
Current - Collector Pulsed (Icm): 110 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 32 A
Part Status: Active
Gate Charge: 155 nC
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IXBH16N170A littelfuse-discrete-igbts-ixb-16n170a-datasheet?assetguid=0e64b56f-f1db-4402-935e-833c7ae1d9a8
IXBH16N170A
Hersteller: IXYS
Description: IGBT 1700V 16A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 360 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/160ns
Switching Energy: 1.2mJ (off)
Test Condition: 1360V, 10A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
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VUE75-12NO7 ee0cd6e2-94ad-4a36-91cc-fb053843982e.pdf
Hersteller: IXYS
Description: BRIDGE RECT 3P 1.2KV 74A ECOPAC1
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ME0500-06DA
ME0500-06DA
Hersteller: IXYS
Description: DIODE GEN PURP 600V 514A Y4-M6
Current - Reverse Leakage @ Vr: 24 mA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: Y4-M6
Current - Average Rectified (Io): 514A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Packaging: Bulk
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IXFN27N80
IXFN27N80
Hersteller: IXYS
Description: MOSFET N-CH 800V 27A SOT-227B
Input Capacitance (Ciss) (Max) @ Vds: 9740 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Part Status: Not For New Designs
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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IXFX55N50F
IXFX55N50F
Hersteller: IXYS
Description: MOSFET N-CH 500V 55A PLUS247-3
Rds On (Max) @ Id, Vgs: 85mOhm @ 27.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Power Dissipation (Max): 560W (Tc)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
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VU068-08N07
Hersteller: IXYS
Description: BRIDGE RECT 3P 800V 68A MODULE
Current - Reverse Leakage @ Vr: 500 µA @ 800 V
Current - Average Rectified (Io): 68 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: Module
Technology: Standard
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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MCC161-22IO1 media?resourcetype=datasheets&itemid=398a0afc-614f-4ceb-af57-781f5b6271d1&filename=Littelfuse-Power-Semiconductors-MCC161-22io1-Datasheet
MCC161-22IO1
Hersteller: IXYS
Description: THERISTER MODULE 2200V
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 165 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 2.2 kV
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IXLF19N250A IXLF19N250A.pdf
IXLF19N250A
Hersteller: IXYS
Description: IGBT NPT 2500V 32A ISOPLUS I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 19A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Switching Energy: 15mJ (on), 30mJ (off)
Test Condition: 1500V, 19A, 47Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 250 W
Produkt ist nicht verfügbar
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MDI 300-12 A4 MII300-12A4_MID300-12A4_MDI300-12A4.pdf
Hersteller: IXYS
Description: TRANS IGBT PWR MODULE 1.2KV 330A
Produkt ist nicht verfügbar
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MEE 300-06DA 96512.pdf
Hersteller: IXYS
Description: DIODE MODULE 600V 304A Y4-M6
Produkt ist nicht verfügbar
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IXFH40N50Q Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH40N50Q-Datasheet.PDF?assetguid=0EC5A491-CE9E-432F-BDFD-54CFAC252C8F
IXFH40N50Q
Hersteller: IXYS
Description: MOSFET N-CH 500V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Produkt ist nicht verfügbar
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HTZ270H48K HTZ270H_series.pdf
Hersteller: IXYS
Description: DIODE MODULE GP 48000V 3.4A
Current - Reverse Leakage @ Vr: 500 µA @ 48000 V
Voltage - Forward (Vf) (Max) @ If: 46 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 48000 V
Supplier Device Package: Module
Current - Average Rectified (Io) (per Diode): 3.4A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Produkt ist nicht verfügbar
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IXGN60N60
Hersteller: IXYS
Description: IGBT MOD 600V 100A 250W SOT-227B
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
Produkt ist nicht verfügbar
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MCC250-18io1 MCC,MCD_250.pdf
MCC250-18io1
Hersteller: IXYS
Description: THYRISTOR DUAL 1800V 450A
Produkt ist nicht verfügbar
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DSEE30-12A DSEE30-12A.PDF
DSEE30-12A
Hersteller: IXYS
Description: DIODE ARRAY GP 1200V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 1792 Stücke:
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1+50.71 EUR
30+32.62 EUR
120+28.67 EUR
510+28.52 EUR
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DSDI60-16A Littelfuse-Power-Semiconductors-DSDI60-18A-Datasheet?assetguid=8d7ea8e6-2ef8-4cef-a969-dabf5d801133
DSDI60-16A
Hersteller: IXYS
Description: DIODE STANDARD 1600V 63A TO247AD
Current - Reverse Leakage @ Vr: 2 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 4.1 V @ 70 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 63A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
auf Bestellung 316 Stücke:
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1+23.29 EUR
30+15.53 EUR
120+14.53 EUR
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MCC310-16io1 MCC310%2CMCD310.pdf
MCC310-16io1
Hersteller: IXYS
Description: SCR MODULE 1.6KV 500A Y2-DCB
Packaging: Bulk
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 500 A
Voltage - Off State: 1.6 kV
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1+253.92 EUR
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VUO50-08NO3 VUO50.pdf
VUO50-08NO3
Hersteller: IXYS
Description: BRIDGE RECT 3P 800V 58A FO-F-B
Packaging: Bulk
Package / Case: FO-F-B
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: FO-F-B
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 58 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 800 V
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IXDN430MYI
IXDN430MYI
Hersteller: IXYS
Description: IC GATE DRVR LOW-SIDE TO263
Packaging: Box
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 8.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: TO-263-5
Rise / Fall Time (Typ): 18ns, 16ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 30A, 30A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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VUO82-16NO7 VUO62%2CVU082.pdf
VUO82-16NO7
Hersteller: IXYS
Description: BRIDGE RECT 3P 1.6KV 88A PWS-D
Packaging: Bulk
Package / Case: PWS-D
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 88 A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
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IXTA3N120 littelfuse-discrete-mosfets-ixta3n120-datasheet?assetguid=0f8a2134-6aa0-4538-a4e2-9a575d3790e6
IXTA3N120
Hersteller: IXYS
Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
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2+16.56 EUR
50+9.14 EUR
100+8.43 EUR
500+7.47 EUR
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VBO130-08NO7 Littelfuse-Power-Semiconductors-VBO130-08NO7-Datasheet?assetguid=32B57B06-D8AF-4BF1-AD92-374C314205BE
VBO130-08NO7
Hersteller: IXYS
Description: BRIDGE RECT 1P 800V 122A PWS-E
Current - Reverse Leakage @ Vr: 200 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A
Current - Average Rectified (Io): 122 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: PWS-E
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Chassis Mount
Package / Case: PWS-E
Packaging: Bulk
Produkt ist nicht verfügbar
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IXFT13N100 IXFT13N100%2C%2012N.pdf
IXFT13N100
Hersteller: IXYS
Description: MOSFET N-CH 1000V 12.5A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Produkt ist nicht verfügbar
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IXDI402SI
IXDI402SI
Hersteller: IXYS
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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FII40-06D FII40-06D.pdf
FII40-06D
Hersteller: IXYS
Description: IGBT H BRIDGE 600V 40A I4PAK5
Produkt ist nicht verfügbar
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MCC312-16io1 Littelfuse-Power-Semiconductors-MCC312-16io1-Datasheet?assetguid=e89527f6-52af-4349-a7ba-66bfa2dd339a
MCC312-16io1
Hersteller: IXYS
Description: SCR MODULE 1.6KV 520A Y1-CU
Packaging: Bulk
Package / Case: Y1-CU
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 10100A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
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DSA9-16F DSA9.pdf
DSA9-16F
Hersteller: IXYS
Description: DIODE AVALANCHE 1.6KV 11A DO203
Produkt ist nicht verfügbar
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IXDD409YI
IXDD409YI
Hersteller: IXYS
Description: IC GATE DRVR LOW-SIDE TO263
Rise / Fall Time (Typ): 10ns, 10ns
Supplier Device Package: TO-263-5
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 35V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Packaging: Tube
Part Status: Obsolete
Current - Peak Output (Source, Sink): 9A, 9A
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IXGH45N120 littelfuse_discrete_igbts_pt_ixgh45n120_datasheet.pdf.pdf
IXGH45N120
Hersteller: IXYS
Description: IGBT 1200V 75A 300W TO247
Part Status: Active
Gate Charge: 170 nC
Test Condition: 960V, 45A, 5Ohm, 15V
Switching Energy: 14mJ (off)
Td (on/off) @ 25°C: 55ns/370ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 45A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Power - Max: 300 W
Current - Collector Pulsed (Icm): 180 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Produkt ist nicht verfügbar
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IXGH60N60
Hersteller: IXYS
Description: IGBT PT 600V 75A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/300ns
Switching Energy: 8mJ (off)
Test Condition: 480V, 60A, 2.7Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IX6R11S3 DS99037.pdf
IX6R11S3
Hersteller: IXYS
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Produkt ist nicht verfügbar
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MCC26-14io1B media?resourcetype=datasheets&itemid=db47a66a-a2da-403b-9630-c03f3e36ff6c&filename=Littelfuse-Power-Semiconductors-MCC26-14io1B-Datasheet
MCC26-14io1B
Hersteller: IXYS
Description: DUL THYRIS MOD 800-2200V 19-320A
Voltage - Off State: 1.4 kV
Current - On State (It (RMS)) (Max): 50 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 32 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Bulk
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MWI150-06A8
Hersteller: IXYS
Description: IGBT MODULE 600V 170A 515W E3
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Current - Collector Cutoff (Max): 1.5 mA
Power - Max: 515 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 170 A
IGBT Type: NPT
Supplier Device Package: E3
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Bulk
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IXTQ64N25P littelfuse_discrete_mosfets_n-channel_standard_ixt_64n25p_datasheet.pdf.pdf
IXTQ64N25P
Hersteller: IXYS
Description: MOSFET N-CH 250V 64A TO3P
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AnzahlPrivatkunde
30+12.17 EUR
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IXGY2N120 98959.pdf
IXGY2N120
Hersteller: IXYS
Description: IGBT 1200V 5A 25W TO252AA
Produkt ist nicht verfügbar
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MCC132-16io1 media?resourcetype=datasheets&itemid=f0f70d98-8170-417b-b7fe-6224cee38257&filename=Littelfuse-Power-Semiconductors-MCC132-16io1-Datasheet
MCC132-16io1
Hersteller: IXYS
Description: THYRISTOR MOD 1600V 2X138A
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 300 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 130 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
Current - Gate Trigger (Igt) (Max): 150 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Packaging: Bulk
Current - Hold (Ih) (Max): 200 mA
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MMO90-14IO6 MMO90-14io6.pdf
MMO90-14IO6
Hersteller: IXYS
Description: SCR DUAL CNTRL 1400V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 440A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 38 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 60 A
Voltage - Off State: 1.4 kV
Produkt ist nicht verfügbar
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VUO105-12NO7 VUO105-12NO7.pdf
Hersteller: IXYS
Description: BRIDGE RECT 3P 1.2KV 140A PWS-C
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VVZB120-12IO2 VVZB120.pdf
Hersteller: IXYS
Description: 3-PHASE BRIDGE RECT 1600V 120A
Produkt ist nicht verfügbar
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IXTH50P085 IXTH50P085.pdf
IXTH50P085
Hersteller: IXYS
Description: MOSFET P-CH 85V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
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IXBT16N170A littelfuse-discrete-igbts-ixb-16n170a-datasheet?assetguid=0e64b56f-f1db-4402-935e-833c7ae1d9a8
IXBT16N170A
Hersteller: IXYS
Description: IGBT 1700V 16A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 360 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 15ns/160ns
Switching Energy: 1.2mJ (off)
Test Condition: 1360V, 10A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
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IXSP10N60B2D1
IXSP10N60B2D1
Hersteller: IXYS
Description: IGBT PT 600V 20A TO-220-3
Power - Max: 100 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Part Status: Obsolete
Gate Charge: 17 nC
Test Condition: 480V, 10A, 30Ohm, 15V
Switching Energy: 430µJ (off)
Td (on/off) @ 25°C: 30ns/180ns
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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IXSA10N60B2D1 99193.pdf
IXSA10N60B2D1
Hersteller: IXYS
Description: IGBT 600V 20A 100W TO263
Power - Max: 100 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Gate Charge: 17 nC
Test Condition: 480V, 10A, 30Ohm, 15V
Switching Energy: 430µJ (off)
Td (on/off) @ 25°C: 30ns/180ns
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
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IXSH10N60B2D1
IXSH10N60B2D1
Hersteller: IXYS
Description: IGBT PT 600V 20A TO-247AD
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Gate Charge: 17 nC
Test Condition: 480V, 10A, 30Ohm, 15V
Switching Energy: 430µJ (off)
Td (on/off) @ 25°C: 30ns/180ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Box
Power - Max: 100 W
Current - Collector Pulsed (Icm): 30 A
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IXSP20N60B2D1
Hersteller: IXYS
Description: IGBT PT 600V 35A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/116ns
Switching Energy: 380µJ (off)
Test Condition: 480V, 16A, 10Ohm, 15V
Gate Charge: 33 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 190 W
Produkt ist nicht verfügbar
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IXSA20N60B2D1
IXSA20N60B2D1
Hersteller: IXYS
Description: IGBT PT 600V 35A TO-263AA
Power - Max: 190 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 35 A
Gate Charge: 33 nC
Test Condition: 480V, 16A, 10Ohm, 15V
Switching Energy: 380µJ (off)
Td (on/off) @ 25°C: 30ns/116ns
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Box
Produkt ist nicht verfügbar
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IXSH20N60B2D1
Hersteller: IXYS
Description: IGBT PT 600V 35A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/116ns
Switching Energy: 380µJ (off)
Test Condition: 480V, 16A, 10Ohm, 15V
Gate Charge: 33 nC
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 190 W
Produkt ist nicht verfügbar
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IXSQ20N60B2D1
IXSQ20N60B2D1
Hersteller: IXYS
Description: IGBT PT 600V 35A TO-3P
Current - Collector (Ic) (Max): 35 A
Gate Charge: 33 nC
Switching Energy: 380µJ (off)
Td (on/off) @ 25°C: 30ns/116ns
IGBT Type: PT
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Bulk
Power - Max: 190 W
Voltage - Collector Emitter Breakdown (Max): 600 V
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IXSH30N60B2D1
IXSH30N60B2D1
Hersteller: IXYS
Description: IGBT PT 600V 48A TO-247AD
Power - Max: 250 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Gate Charge: 50 nC
Test Condition: 400V, 24A, 5Ohm, 15V
Switching Energy: 550µJ (off)
Td (on/off) @ 25°C: 30ns/130ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Produkt ist nicht verfügbar
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IXST30N60B2D1 littelfuse_discrete_igbts_pt_ixsh30n60b2d1_datasheet.pdf.pdf
IXST30N60B2D1
Hersteller: IXYS
Description: IGBT 600V 48A 250W TO268
Power - Max: 250 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Gate Charge: 50 nC
Test Condition: 400V, 24A, 5Ohm, 15V
Switching Energy: 550µJ (off)
Td (on/off) @ 25°C: 30ns/130ns
IGBT Type: PT
Supplier Device Package: TO-268AA
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Bulk
Produkt ist nicht verfügbar
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IXSH40N60B2D1
IXSH40N60B2D1
Hersteller: IXYS
Description: IGBT 600V 48A TO247
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Part Status: Obsolete
IGBT Type: PT
Supplier Device Package: TO-247AD
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IXST40N60B2D1
IXST40N60B2D1
Hersteller: IXYS
Description: IGBT 600V 48A TO268
Produkt ist nicht verfügbar
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IXZ210N50L
Hersteller: IXYS
Description: RF MOSFET 50V DE275
Voltage - Test: 50 V
Voltage - Rated: 500 V
Part Status: Obsolete
Supplier Device Package: DE275
Technology: MOSFET
Gain: 16dB
Power - Output: 200W
Configuration: N-Channel
Frequency: 175MHz
Current Rating (Amps): 10A
Package / Case: 6-SMD Module
Packaging: Tube
Produkt ist nicht verfügbar
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IX6R11S6 DS99037.pdf
IX6R11S6
Hersteller: IXYS
Description: IC GATE DRVR HALF-BRIDGE 18SOIC
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IXFR40N50Q2 IXFR40N50Q2.pdf
IXFR40N50Q2
Hersteller: IXYS
Description: MOSFET N-CH 500V 29A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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ZY180L350
Hersteller: IXYS
Description: X SERIES KEY PLUG W/WIRE 350MM
Part Status: Active
Type: Keyed Gate Cathode Twin Plugs
Packaging: Bulk
Produkt ist nicht verfügbar
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ZY180R350
Hersteller: IXYS
Description: X SER KEY PLUG W/WIRE 350MM RED
Part Status: Active
Type: Keyed Gate Cathode Twin Plugs
Packaging: Bulk
auf Bestellung 4745 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.08 EUR
10+6.7 EUR
250+4.3 EUR
500+3.99 EUR
1000+3.72 EUR
2000+3.59 EUR
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MCC19-16io1B media?resourcetype=datasheets&itemid=55a0be16-ce76-406d-b95f-b29fe14fda15&filename=Littelfuse-Power-Semiconductors-MCC19-16io1B-Datasheet
MCC19-16io1B
Hersteller: IXYS
Description: THYRISTOR MODULE 1600V 2X40A
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 40 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 25 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 420A
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Bulk
auf Bestellung 72 Stücke:
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AnzahlPrivatkunde
1+51 EUR
36+35.47 EUR
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IXSK35N120AU1 94526.pdf
IXSK35N120AU1
Hersteller: IXYS
Description: IGBT 1200V 70A 300W TO264
Supplier Device Package: TO-264AA (IXSK)
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Bulk
Power - Max: 300 W
Current - Collector Pulsed (Icm): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 70 A
Part Status: Obsolete
Gate Charge: 150 nC
Test Condition: 960V, 35A, 2.7Ohm, 15V
Switching Energy: 10mJ (off)
Td (on/off) @ 25°C: 80ns/400ns
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