Produkte > IXYS > Alle Produkte des Herstellers IXYS (15417) > Seite 4 nach 257

Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 25 50 75 100 125 150 175 200 225 250 257  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IXTH5N100A IXTH5N100A IXYS Description: MOSFET N-CH 1000V 5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFT58N20Q IXFT58N20Q IXYS 98523.pdf Description: MOSFET N-CH 200V 58A TO-268
Produkt ist nicht verfügbar
 Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTH8P50 IXTH8P50 IXYS 94534.pdf Description: MOSFET P-CH 500V 8A TO-247
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN130N30 IXFN130N30 IXYS 98531.pdf Description: MOSFET N-CH 300V 130A SOT-227B
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VBE5512N07 IXYS l364.pdf Description: BRIDGE RECT 1P 1.2KV 59A ECOPAC1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDD408PI IXDD408PI IXYS Description: IC GATE DRVR LOW-SIDE 8DIP
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 25V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 8A, 8A
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 14ns, 15ns
Supplier Device Package: 8-DIP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGH25N100A IXGH25N100A IXYS IXGH%2CIXGM_25N100%28A%29.pdf Description: IGBT 1000V 50A TO-247AD
Power - Max: 200 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector (Ic) (Max): 50 A
Part Status: Obsolete
Gate Charge: 130 nC
Test Condition: 800V, 25A, 33Ohm, 15V
Switching Energy: 5mJ (off)
Td (on/off) @ 25°C: 100ns/500ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DSEP60-12A DSEP60-12A IXYS Littelfuse-Power-Semiconductors-DSEP60-12A-Datasheet?assetguid=3792608a-3be1-4545-b4da-b3e97b7aa101 Description: DIODE STANDARD 1200V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 60 A
Current - Reverse Leakage @ Vr: 650 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSEC240-06A IXYS description Description: DIODE MOD GP 600V 120A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.91 V @ 120 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTH13N110 IXTH13N110 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixth13n110_datasheet.pdf.pdf Description: MOSFET N-CH 1100V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1100 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5650 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSEP9-06CR DSEP9-06CR IXYS Description: DIODE GP 600V 9A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 4 V @ 9 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXBH16N170 IXBH16N170 IXYS littelfuse-discrete-igbts-ixb-16n170-datasheet?assetguid=803acd33-1022-4639-8291-dfbc7a628038 Description: IGBT 1700V 40A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.32 µs
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 16A
Supplier Device Package: TO-247AD
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
auf Bestellung 358 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.27 EUR
30+20.1 EUR
120+17.71 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXSH35N100A IXSH35N100A IXYS Description: IGBT 1000V 70A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 35A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 80ns/400ns
Switching Energy: 10mJ (off)
Test Condition: 800V, 35A, 2.7Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGK50N60B IXGK50N60B IXYS Description: IGBT 600V 75A TO-264
Test Condition: 480V, 50A, 2.7Ohm, 15V
Switching Energy: 3mJ (off)
Td (on/off) @ 25°C: 50ns/150ns
Supplier Device Package: TO-264 (IXGK)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Input Type: Standard
Package / Case: TO-264-3, TO-264AA
Packaging: Bulk
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Mounting Type: Through Hole
Gate Charge: 160 nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC132-14io1 MCC132-14io1 IXYS media?resourcetype=datasheets&itemid=76991c6e-60b1-466b-b181-c50acc7a31c6&filename=Littelfuse-Power-Semiconductors-MCC132-14io1-Datasheet Description: THYRISTOR MODULE 1400V 2X130A
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.4 kV
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MEO550-02DA MEO550-02DA IXYS 238_L011.pdf Description: DIODE STANDARD 200V 582A Y4M6
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 582A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 520 A
Current - Reverse Leakage @ Vr: 5 mA @ 200 V
auf Bestellung 203 Stücke:
Lieferzeit 10-14 Tag (e)
1+139.75 EUR
12+109.81 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFX180N07 IXFX180N07 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_180n07_datasheet.pdf.pdf Description: MOSFET N-CH 70V 180A PLUS247
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Drain to Source Voltage (Vdss): 70 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 568W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR34N80 IXFR34N80 IXYS DS98674B(IXFR34N80).pdf Description: MOSFET N-CH 800V 28A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 416W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK44N60 IXFK44N60 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_44n60_datasheet.pdf.pdf Description: MOSFET N-CH 600V 44A TO264AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VUO16012NO7 VUO16012NO7 IXYS Description: BRIDGE RECT 3P 1.2KV 175A PWS-E1
Packaging: Bulk
Package / Case: PWS-E
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-E
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 175 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VBO13-08NO2 VBO13-08NO2 IXYS VBO13-08NO2.pdf Description: BRIDGE RECT 1PHASE 800V 18A FO-A
Packaging: Bulk
Package / Case: 4-Square, FO-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: FO-A
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 18 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 55 A
Current - Reverse Leakage @ Vr: 300 µA @ 800 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VBO13-12NO2 VBO13-12NO2 IXYS VBO13-08NO2.pdf Description: BRIDGE RECT 1P 1.2KV 18A FO-A
Packaging: Bulk
Package / Case: 4-Square, FO-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: FO-A
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 18 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 55 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXBH40N160 IXBH40N160 IXYS littelfuse_discrete_igbts_bimosfet_ixbh40n160_datasheet.pdf.pdf Description: IGBT 1600V 33A 350W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 7.1V @ 15V, 20A
Supplier Device Package: TO-247AD
Test Condition: 960V, 20A, 22Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 350 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VBO13-16NO2 VBO13-16NO2 IXYS VBO13-08NO2.pdf Description: BRIDGE RECT 1P 1.6KV 18A FO-A
Packaging: Bulk
Package / Case: 4-Square, FO-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: FO-A
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 18 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 55 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFR12N100 IXFR12N100 IXYS Description: MOSFET N-CH 1000V 10A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 6A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VHF25-08IO7 IXYS L302.pdf Description: BRIDGE RECT SGL PHASE 800V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXBH42N170 IXBH42N170 IXYS littelfuse-discrete-igbts-ixb-42n170-datasheet?assetguid=d2e8687d-05d2-4f90-ad6a-41a0f0332343 Description: IGBT 1700V 80A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.32 µs
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 42A
Supplier Device Package: TO-247AD
Gate Charge: 188 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 360 W
auf Bestellung 1230 Stücke:
Lieferzeit 10-14 Tag (e)
1+53.24 EUR
30+34.62 EUR
120+33.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFR24N100 IXFR24N100 IXYS media?resourcetype=datasheets&itemid=0A0F7E49-0778-411C-AF79-C7DD563396C5&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFR24N100-Datasheet.PDF Description: MOSFET N-CH 1KV 22A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VUO5012N03 IXYS VUO50.pdf Description: BRIDGE RECT 3 PHASE 1200V 58A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTH24P20 IXTH24P20 IXYS DS98769GIXTHIXTT24P20.pdf Description: MOSFET P-CH 200V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
auf Bestellung 379 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.94 EUR
30+14.42 EUR
120+12.34 EUR
Im Einkaufswagen  Stück im Wert von  UAH
VBE17-06NO7 IXYS media?resourcetype=datasheets&amp;itemid=f3f5350c-8be6-4e9c-b98f-d5ff3e319683&amp;filename=littelfuse%2520power%2520semiconductors%2520vbe17-06no7%2520datasheet.pdf Description: BRIDGE RECT 1P 600V 27A ECO-PAC1
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.09 V @ 10 A
Current - Average Rectified (Io): 27 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: ECO-PAC1
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Chassis Mount
Package / Case: ECO-PAC1
Packaging: Bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXGX50N60AU1 IXYS Description: IGBT 600V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 4.8mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
Produkt ist nicht verfügbar
 Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DSP25-12A DSP25-12A IXYS media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet Description: DIODE ARRAY GP 1200V 28A TO247AD
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 2 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 55 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 180°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io) (per Diode): 28A
Diode Configuration: 1 Pair Series Connection
auf Bestellung 1654 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.19 EUR
30+8.87 EUR
120+7.6 EUR
510+6.76 EUR
1020+5.78 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DSP25-16A DSP25-16A IXYS Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet?assetguid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8 Description: DIODE ARRAY GP 1600V 28A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 28A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 55 A
Current - Reverse Leakage @ Vr: 2 mA @ 1600 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.83 EUR
30+6.35 EUR
120+5.76 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DSP25-16AR DSP25-16AR IXYS Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet?assetguid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8 Description: DIODE ARRAY GP 1600V ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 28A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 55 A
Current - Reverse Leakage @ Vr: 2 mA @ 1600 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
2+18.99 EUR
30+10.57 EUR
120+10.53 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DSS2X121-0045B DSS2X121-0045B IXYS Littelfuse-Power-Semiconductors-DSS2x121-0045B-Datasheet?assetguid=1128d46d-5743-4a9f-9e3e-200242337dc3 description Description: DIODE MOD SCHOT 45V 120A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 120 A
Current - Reverse Leakage @ Vr: 120 mA @ 45 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DSS2X160-01A DSS2X160-01A IXYS L143.pdf description Description: DIODE MODULE 100V 160A SOT227B
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DSS2X41-01A DSS2X41-01A IXYS DSS2x41-01A.pdf description Description: DIODE MODULE 100V 40A SOT227B
auf Bestellung 303 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DSSK60-015A DSSK60-015A IXYS media?resourcetype=datasheets&itemid=b00f0b0f-1e1b-411f-b7c2-131aad4aca5b&filename=littelfuse%2520power%2520semiconductors%2520dssk60-015a%2520datasheet.pdf description Description: DIODE ARR SCHOT 150V 30A TO247AD
Current - Reverse Leakage @ Vr: 2 mA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DSSK80-0045B DSSK80-0045B IXYS media?resourcetype=datasheets&itemid=341029cf-21a3-4de4-aa30-de952f5e2fc8&filename=Littelfuse-Power-Semiconductors-DSSK80-0045B-Datasheet Description: DIODE ARR SCHOTT 45V 40A TO247AD
Supplier Device Package: TO-247AD
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 30 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar
 Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFH15N80Q IXFH15N80Q IXYS Description: MOSFET N-CH 800V 15A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH20N80Q IXFH20N80Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_20n80q_datasheet.pdf.pdf Description: MOSFET N-CH 800V 20A TO247AD
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH26N60Q IXYS description Description: MOSFET N-CH 600V 26A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 13A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH52N30Q IXFH52N30Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh52n30q_datasheet.pdf.pdf Description: MOSFET N-CH 300V 52A TO247AD
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Produkt ist nicht verfügbar
 Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFH80N20Q IXFH80N20Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh80n20q_datasheet.pdf.pdf Description: MOSFET N-CH 200V 80A TO247AD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK120N20 IXFK120N20 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_120n20_datasheet.pdf.pdf Description: MOSFET N-CH 200V 120A TO-264AA
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 560W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK180N10 IXFK180N10 IXYS media?resourcetype=datasheets&itemid=7C8B27C9-D58D-42D8-A144-41021B5D54AA&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFK180N10-Datasheet.PDF Description: MOSFET N-CH 100V 180A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V
Packaging: Tube
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 560W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFK24N100 IXFK24N100 IXYS media?resourcetype=datasheets&itemid=82450459-F74F-474C-A73A-58C1687B42B8&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-24N100-Datasheet.PDF Description: MOSFET N-CH 1KV 24A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFK27N80 IXFK27N80 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_27n80_datasheet.pdf.pdf Description: MOSFET N-CH 800V 27A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 9740 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK34N80 IXFK34N80 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_34n80_datasheet.pdf.pdf Description: MOSFET N-CH 800V 34A TO-264AA
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 560W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFK90N20Q IXFK90N20Q IXYS media?resourcetype=datasheets&itemid=53EC60B4-4F54-4694-A250-F3367BA729E0&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-90N20Q-Datasheet.PDF Description: MOSFET N-CH 200V 90A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFN120N20 IXFN120N20 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn120n20_datasheet.pdf.pdf Description: MOSFET N-CH 200V 120A SOT-227B
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFN24N100 IXFN24N100 IXYS DS98597HIXFN24N100.pdf description Description: MOSFET N-CH 1KV 24A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN26N90 IXFN26N90 IXYS media?resourcetype=datasheets&itemid=EFE530A2-11FA-4732-8FB0-9A3EC28D189F&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFN26N90-Datasheet.PDF description Description: MOSFET N-CH 900V 26A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFN60N60 IXFN60N60 IXYS media?resourcetype=datasheets&itemid=149785A1-B564-42F4-8374-95E201CAB2BA&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFN60N60-Datasheet.PDF description Description: MOSFET N-CH 600V 60A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFN80N50 IXFN80N50 IXYS 98538.pdf description Description: MOSFET N-CH 500V 80A SOT-227B
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 262 Stücke:
Lieferzeit 10-14 Tag (e)
1+109.05 EUR
10+83.37 EUR
100+81.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFR120N20 IXFR120N20 IXYS media?resourcetype=datasheets&itemid=324F95D3-AF69-4C70-A74A-4D69999E6F04&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFR120N20-Datasheet.PDF Description: MOSFET N-CH 200V 105A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFR180N10 IXFR180N10 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr180n10_datasheet.pdf.pdf Description: MOSFET N-CH 100V 165A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFR44N60 IXFR44N60 IXYS Description: MOSFET N-CH 600V 38A ISOPLUS247
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFT32N50Q IXFT32N50Q IXYS IXF%28H%2CT%2930N50Q%2C%2032N50Q.pdf Description: MOSFET N-CH 500V 32A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 16A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4925 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH5N100A
IXTH5N100A
Hersteller: IXYS
Description: MOSFET N-CH 1000V 5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFT58N20Q 98523.pdf
IXFT58N20Q
Hersteller: IXYS
Description: MOSFET N-CH 200V 58A TO-268
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTH8P50 94534.pdf
IXTH8P50
Hersteller: IXYS
Description: MOSFET P-CH 500V 8A TO-247
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN130N30 98531.pdf
IXFN130N30
Hersteller: IXYS
Description: MOSFET N-CH 300V 130A SOT-227B
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VBE5512N07 l364.pdf
Hersteller: IXYS
Description: BRIDGE RECT 1P 1.2KV 59A ECOPAC1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDD408PI
IXDD408PI
Hersteller: IXYS
Description: IC GATE DRVR LOW-SIDE 8DIP
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 25V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 8A, 8A
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 14ns, 15ns
Supplier Device Package: 8-DIP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGH25N100A IXGH%2CIXGM_25N100%28A%29.pdf
IXGH25N100A
Hersteller: IXYS
Description: IGBT 1000V 50A TO-247AD
Power - Max: 200 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector (Ic) (Max): 50 A
Part Status: Obsolete
Gate Charge: 130 nC
Test Condition: 800V, 25A, 33Ohm, 15V
Switching Energy: 5mJ (off)
Td (on/off) @ 25°C: 100ns/500ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DSEP60-12A Littelfuse-Power-Semiconductors-DSEP60-12A-Datasheet?assetguid=3792608a-3be1-4545-b4da-b3e97b7aa101
DSEP60-12A
Hersteller: IXYS
Description: DIODE STANDARD 1200V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 60 A
Current - Reverse Leakage @ Vr: 650 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSEC240-06A description
Hersteller: IXYS
Description: DIODE MOD GP 600V 120A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.91 V @ 120 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTH13N110 littelfuse_discrete_mosfets_n-channel_standard_ixth13n110_datasheet.pdf.pdf
IXTH13N110
Hersteller: IXYS
Description: MOSFET N-CH 1100V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1100 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5650 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSEP9-06CR
DSEP9-06CR
Hersteller: IXYS
Description: DIODE GP 600V 9A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 4 V @ 9 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXBH16N170 littelfuse-discrete-igbts-ixb-16n170-datasheet?assetguid=803acd33-1022-4639-8291-dfbc7a628038
IXBH16N170
Hersteller: IXYS
Description: IGBT 1700V 40A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.32 µs
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 16A
Supplier Device Package: TO-247AD
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
auf Bestellung 358 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+32.27 EUR
30+20.1 EUR
120+17.71 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXSH35N100A
IXSH35N100A
Hersteller: IXYS
Description: IGBT 1000V 70A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 35A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 80ns/400ns
Switching Energy: 10mJ (off)
Test Condition: 800V, 35A, 2.7Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGK50N60B
IXGK50N60B
Hersteller: IXYS
Description: IGBT 600V 75A TO-264
Test Condition: 480V, 50A, 2.7Ohm, 15V
Switching Energy: 3mJ (off)
Td (on/off) @ 25°C: 50ns/150ns
Supplier Device Package: TO-264 (IXGK)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Input Type: Standard
Package / Case: TO-264-3, TO-264AA
Packaging: Bulk
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Mounting Type: Through Hole
Gate Charge: 160 nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC132-14io1 media?resourcetype=datasheets&itemid=76991c6e-60b1-466b-b181-c50acc7a31c6&filename=Littelfuse-Power-Semiconductors-MCC132-14io1-Datasheet
MCC132-14io1
Hersteller: IXYS
Description: THYRISTOR MODULE 1400V 2X130A
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.4 kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MEO550-02DA 238_L011.pdf
MEO550-02DA
Hersteller: IXYS
Description: DIODE STANDARD 200V 582A Y4M6
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 582A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 520 A
Current - Reverse Leakage @ Vr: 5 mA @ 200 V
auf Bestellung 203 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+139.75 EUR
12+109.81 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFX180N07 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_180n07_datasheet.pdf.pdf
IXFX180N07
Hersteller: IXYS
Description: MOSFET N-CH 70V 180A PLUS247
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Drain to Source Voltage (Vdss): 70 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 568W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR34N80 DS98674B(IXFR34N80).pdf
IXFR34N80
Hersteller: IXYS
Description: MOSFET N-CH 800V 28A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 416W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK44N60 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_44n60_datasheet.pdf.pdf
IXFK44N60
Hersteller: IXYS
Description: MOSFET N-CH 600V 44A TO264AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VUO16012NO7
VUO16012NO7
Hersteller: IXYS
Description: BRIDGE RECT 3P 1.2KV 175A PWS-E1
Packaging: Bulk
Package / Case: PWS-E
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-E
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 175 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VBO13-08NO2 VBO13-08NO2.pdf
VBO13-08NO2
Hersteller: IXYS
Description: BRIDGE RECT 1PHASE 800V 18A FO-A
Packaging: Bulk
Package / Case: 4-Square, FO-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: FO-A
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 18 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 55 A
Current - Reverse Leakage @ Vr: 300 µA @ 800 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VBO13-12NO2 VBO13-08NO2.pdf
VBO13-12NO2
Hersteller: IXYS
Description: BRIDGE RECT 1P 1.2KV 18A FO-A
Packaging: Bulk
Package / Case: 4-Square, FO-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: FO-A
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 18 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 55 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXBH40N160 littelfuse_discrete_igbts_bimosfet_ixbh40n160_datasheet.pdf.pdf
IXBH40N160
Hersteller: IXYS
Description: IGBT 1600V 33A 350W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 7.1V @ 15V, 20A
Supplier Device Package: TO-247AD
Test Condition: 960V, 20A, 22Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 350 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VBO13-16NO2 VBO13-08NO2.pdf
VBO13-16NO2
Hersteller: IXYS
Description: BRIDGE RECT 1P 1.6KV 18A FO-A
Packaging: Bulk
Package / Case: 4-Square, FO-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: FO-A
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 18 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 55 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFR12N100
IXFR12N100
Hersteller: IXYS
Description: MOSFET N-CH 1000V 10A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 6A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VHF25-08IO7 L302.pdf
Hersteller: IXYS
Description: BRIDGE RECT SGL PHASE 800V
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXBH42N170 littelfuse-discrete-igbts-ixb-42n170-datasheet?assetguid=d2e8687d-05d2-4f90-ad6a-41a0f0332343
IXBH42N170
Hersteller: IXYS
Description: IGBT 1700V 80A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.32 µs
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 42A
Supplier Device Package: TO-247AD
Gate Charge: 188 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 360 W
auf Bestellung 1230 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+53.24 EUR
30+34.62 EUR
120+33.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFR24N100 media?resourcetype=datasheets&itemid=0A0F7E49-0778-411C-AF79-C7DD563396C5&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFR24N100-Datasheet.PDF
IXFR24N100
Hersteller: IXYS
Description: MOSFET N-CH 1KV 22A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VUO5012N03 VUO50.pdf
Hersteller: IXYS
Description: BRIDGE RECT 3 PHASE 1200V 58A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTH24P20 DS98769GIXTHIXTT24P20.pdf
IXTH24P20
Hersteller: IXYS
Description: MOSFET P-CH 200V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
auf Bestellung 379 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+23.94 EUR
30+14.42 EUR
120+12.34 EUR
Im Einkaufswagen  Stück im Wert von  UAH
VBE17-06NO7 media?resourcetype=datasheets&amp;itemid=f3f5350c-8be6-4e9c-b98f-d5ff3e319683&amp;filename=littelfuse%2520power%2520semiconductors%2520vbe17-06no7%2520datasheet.pdf
Hersteller: IXYS
Description: BRIDGE RECT 1P 600V 27A ECO-PAC1
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.09 V @ 10 A
Current - Average Rectified (Io): 27 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: ECO-PAC1
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Chassis Mount
Package / Case: ECO-PAC1
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXGX50N60AU1
Hersteller: IXYS
Description: IGBT 600V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 4.8mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DSP25-12A media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet
DSP25-12A
Hersteller: IXYS
Description: DIODE ARRAY GP 1200V 28A TO247AD
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 2 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 55 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 180°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io) (per Diode): 28A
Diode Configuration: 1 Pair Series Connection
auf Bestellung 1654 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.19 EUR
30+8.87 EUR
120+7.6 EUR
510+6.76 EUR
1020+5.78 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DSP25-16A Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet?assetguid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8
DSP25-16A
Hersteller: IXYS
Description: DIODE ARRAY GP 1600V 28A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 28A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 55 A
Current - Reverse Leakage @ Vr: 2 mA @ 1600 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.83 EUR
30+6.35 EUR
120+5.76 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DSP25-16AR Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet?assetguid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8
DSP25-16AR
Hersteller: IXYS
Description: DIODE ARRAY GP 1600V ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 28A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 55 A
Current - Reverse Leakage @ Vr: 2 mA @ 1600 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.99 EUR
30+10.57 EUR
120+10.53 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DSS2X121-0045B description Littelfuse-Power-Semiconductors-DSS2x121-0045B-Datasheet?assetguid=1128d46d-5743-4a9f-9e3e-200242337dc3
DSS2X121-0045B
Hersteller: IXYS
Description: DIODE MOD SCHOT 45V 120A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 120 A
Current - Reverse Leakage @ Vr: 120 mA @ 45 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DSS2X160-01A description L143.pdf
DSS2X160-01A
Hersteller: IXYS
Description: DIODE MODULE 100V 160A SOT227B
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DSS2X41-01A description DSS2x41-01A.pdf
DSS2X41-01A
Hersteller: IXYS
Description: DIODE MODULE 100V 40A SOT227B
auf Bestellung 303 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DSSK60-015A description media?resourcetype=datasheets&itemid=b00f0b0f-1e1b-411f-b7c2-131aad4aca5b&filename=littelfuse%2520power%2520semiconductors%2520dssk60-015a%2520datasheet.pdf
DSSK60-015A
Hersteller: IXYS
Description: DIODE ARR SCHOT 150V 30A TO247AD
Current - Reverse Leakage @ Vr: 2 mA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DSSK80-0045B media?resourcetype=datasheets&itemid=341029cf-21a3-4de4-aa30-de952f5e2fc8&filename=Littelfuse-Power-Semiconductors-DSSK80-0045B-Datasheet
DSSK80-0045B
Hersteller: IXYS
Description: DIODE ARR SCHOTT 45V 40A TO247AD
Supplier Device Package: TO-247AD
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 30 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFH15N80Q
IXFH15N80Q
Hersteller: IXYS
Description: MOSFET N-CH 800V 15A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH20N80Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_20n80q_datasheet.pdf.pdf
IXFH20N80Q
Hersteller: IXYS
Description: MOSFET N-CH 800V 20A TO247AD
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH26N60Q description
Hersteller: IXYS
Description: MOSFET N-CH 600V 26A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 13A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH52N30Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh52n30q_datasheet.pdf.pdf
IXFH52N30Q
Hersteller: IXYS
Description: MOSFET N-CH 300V 52A TO247AD
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFH80N20Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh80n20q_datasheet.pdf.pdf
IXFH80N20Q
Hersteller: IXYS
Description: MOSFET N-CH 200V 80A TO247AD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK120N20 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_120n20_datasheet.pdf.pdf
IXFK120N20
Hersteller: IXYS
Description: MOSFET N-CH 200V 120A TO-264AA
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 560W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK180N10 media?resourcetype=datasheets&itemid=7C8B27C9-D58D-42D8-A144-41021B5D54AA&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFK180N10-Datasheet.PDF
IXFK180N10
Hersteller: IXYS
Description: MOSFET N-CH 100V 180A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V
Packaging: Tube
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 560W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFK24N100 media?resourcetype=datasheets&itemid=82450459-F74F-474C-A73A-58C1687B42B8&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-24N100-Datasheet.PDF
IXFK24N100
Hersteller: IXYS
Description: MOSFET N-CH 1KV 24A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFK27N80 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_27n80_datasheet.pdf.pdf
IXFK27N80
Hersteller: IXYS
Description: MOSFET N-CH 800V 27A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 9740 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK34N80 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_34n80_datasheet.pdf.pdf
IXFK34N80
Hersteller: IXYS
Description: MOSFET N-CH 800V 34A TO-264AA
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 560W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFK90N20Q media?resourcetype=datasheets&itemid=53EC60B4-4F54-4694-A250-F3367BA729E0&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-90N20Q-Datasheet.PDF
IXFK90N20Q
Hersteller: IXYS
Description: MOSFET N-CH 200V 90A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFN120N20 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn120n20_datasheet.pdf.pdf
IXFN120N20
Hersteller: IXYS
Description: MOSFET N-CH 200V 120A SOT-227B
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFN24N100 description DS98597HIXFN24N100.pdf
IXFN24N100
Hersteller: IXYS
Description: MOSFET N-CH 1KV 24A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN26N90 description media?resourcetype=datasheets&itemid=EFE530A2-11FA-4732-8FB0-9A3EC28D189F&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFN26N90-Datasheet.PDF
IXFN26N90
Hersteller: IXYS
Description: MOSFET N-CH 900V 26A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFN60N60 description media?resourcetype=datasheets&itemid=149785A1-B564-42F4-8374-95E201CAB2BA&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFN60N60-Datasheet.PDF
IXFN60N60
Hersteller: IXYS
Description: MOSFET N-CH 600V 60A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFN80N50 description 98538.pdf
IXFN80N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 80A SOT-227B
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 262 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+109.05 EUR
10+83.37 EUR
100+81.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFR120N20 media?resourcetype=datasheets&itemid=324F95D3-AF69-4C70-A74A-4D69999E6F04&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFR120N20-Datasheet.PDF
IXFR120N20
Hersteller: IXYS
Description: MOSFET N-CH 200V 105A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFR180N10 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr180n10_datasheet.pdf.pdf
IXFR180N10
Hersteller: IXYS
Description: MOSFET N-CH 100V 165A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFR44N60
IXFR44N60
Hersteller: IXYS
Description: MOSFET N-CH 600V 38A ISOPLUS247
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFT32N50Q IXF%28H%2CT%2930N50Q%2C%2032N50Q.pdf
IXFT32N50Q
Hersteller: IXYS
Description: MOSFET N-CH 500V 32A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 16A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4925 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 25 50 75 100 125 150 175 200 225 250 257  [ Nächste Seite >> ]