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IXFN150N10 IXFN150N10 IXYS IXFK100N10%2C%20IXFN150N10.pdf Description: MOSFET N-CH 100V 150A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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IXFN106N20 IXFN106N20 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf____n20_datasheet.pdf.pdf Description: MOSFET N-CH 200V 106A SOT-227B
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 521W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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CS8-08IO2 CS8-08IO2 IXYS CS8.pdf Description: SCR PHASE CONTROL 800V 16A TO-64
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CS8-12IO2 CS8-12IO2 IXYS CS8.pdf Description: SCR 1.2KV 25A TO64
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 25 A
Supplier Device Package: TO-64
Current - Off State (Max): 3 mA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 16 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 270A
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Hold (Ih) (Max): 80 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis, Stud Mount
Package / Case: TO-208AB, TO-64-3, Stud
Packaging: Bulk
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CS23-08IO2 CS23-08IO2 IXYS Description: SCR 800V 50A TO208AA
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 50 A
Part Status: Obsolete
Supplier Device Package: TO-208AA (TO-48)
Current - Off State (Max): 3 mA
Voltage - On State (Vtm) (Max): 1.8 V
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 32 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 450A, 480A
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Hold (Ih) (Max): 100 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis, Stud Mount
Package / Case: TO-208AA, TO-48-3, Stud
Packaging: Bulk
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CS23-12IO2 IXYS Description: SCR 1.2KV 50A TO-208AA (TO-48)
Packaging: Bulk
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 450A, 480A
Current - On State (It (AV)) (Max): 32 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 3 mA
Supplier Device Package: TO-208AA (TO-48)
Current - On State (It (RMS)) (Max): 50 A
Voltage - Off State: 1.2 kV
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CS23-16IO2 CS23-16IO2 IXYS L105.pdf Description: SCR PHASE CONTROL 1600V 25A TO48
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CS35-08IO4 CS35-08IO4 IXYS L106.pdf Description: SCR PHASE CONTROL 800V 60A TO-65
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CS35-12IO4 CS35-12IO4 IXYS Description: SCR 1.2KV 120A TO-208AC (TO-65)
Packaging: Bulk
Package / Case: TO-208AC, TO-65-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 80 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1200A, 1340A
Current - On State (It (AV)) (Max): 69 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-208AC (TO-65)
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.2 kV
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CS35-14IO4 CS35-14IO4 IXYS L106.pdf Description: SCR PHASE CONTROL 1400V 60A TO65
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MCC95-16io8B MCC95-16io8B IXYS media?resourcetype=datasheets&itemid=44590aec-1d96-4bcc-b367-9d3f61bb33b5&filename=Littelfuse-Power-Semiconductors-MCC95-16io8B-Datasheet Description: THYRISTOR MODULE 1600V TO-240AA
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 180 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 116 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Bulk
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MCC95-16io1B MCC95-16io1B IXYS Littelfuse-Power-Semiconductors-MCC95-16io1B-Datasheet?assetguid=cdfd30f8-3ffa-41d5-a193-6bf6bcc7d3e7 Description: SCR MODULE 1.6KV 180A TO-240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 180 A
Voltage - Off State: 1.6 kV
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DSEI2X30-10B DSEI2X30-10B IXYS 238_DSEI2x30-10B_DSEI2x31-10B.pdf Description: DIODE MOD GP 1000V 30A SOT227B
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SOT-227B
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 750 µA @ 1000 V
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DSEI2X61-12B DSEI2X61-12B IXYS Littelfuse-Power-Semiconductors-DSEI2x61-12B-Datasheet?assetguid=063b5a30-c723-4c85-b69d-7d14b1f3d707 description Description: DIODE MOD GP 1200V 52A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 52A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 2.2 mA @ 1200 V
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IXFN73N30 IXFN73N30 IXYS 92805.pdf description Description: MOSFET N-CH 300V 73A SOT-227B
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MCC162-16io1 MCC162-16io1 IXYS Littelfuse-Power-Semiconductors-MCC162-16io1-Datasheet?assetguid=b0aedb99-caa9-46bd-8368-951f2bef3718 Description: SCR MODULE 1.6KV 300A Y4-M6
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 190 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
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MCC56-12io8B MCC56-12io8B IXYS Littelfuse-Power-Semiconductors-MCC56-12io8B-Datasheet?assetguid=6112757c-38f9-4ad0-bb04-1bd46ff25d0f Description: SCR MODULE 1.2KV 100A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 64 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 100 A
Voltage - Off State: 1.2 kV
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DSEI2X101-06A DSEI2X101-06A IXYS Littelfuse-Power-Semiconductors-DSEI2x101-06A-Datasheet?assetguid=480047e3-30ec-4e0b-b058-787e0545fd19 Description: DIODE MODULE GP 600V 96A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 96A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
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MII100-12A3 MII100-12A3 IXYS Description: IGBT MODULE 1200V 135A 560W Y4M5
Packaging: Bulk
Package / Case: Y4-M5
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Y4-M5
IGBT Type: NPT
Current - Collector (Ic) (Max): 135 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 560 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V
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IXTH40N30 IXTH40N30 IXYS media?resourcetype=datasheets&itemid=8B57C975-ED35-4376-8589-EA56B60A449B&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXTH40N30-Datasheet.PDF Description: MOSFET N-CH 300V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
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DSA2-16A DSA2-16A IXYS DS2_DSA2.pdf Description: DIODE AVALANCHE 1600V 3.6A AXIAL
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DSEI2X121-02A DSEI2X121-02A IXYS Littelfuse-Power-Semiconductors-DSEI2x121-02A-Datasheet?assetguid=04d240e8-8e87-4d79-8545-f189a5c9a116 Description: DIODE MOD GP 200V 123A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 123A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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DSEP2X61-06A DSEP2X61-06A IXYS media?resourcetype=datasheets&itemid=5f766602-43a9-430e-baba-5913171f6b59&filename=Littelfuse-Power-Semiconductors-DSEP2x61-06A-Datasheet description Description: DIODE MODULE GP 600V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A
Current - Reverse Leakage @ Vr: 650 µA @ 600 V
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DSEP30-06A DSEP30-06A IXYS Littelfuse-Power-Semiconductors-DSEP30-06A-Datasheet?assetguid=a1247dc4-0f2e-480c-b36e-0aa0ae250324 Description: DIODE STANDARD 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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DSEP30-12A DSEP30-12A IXYS Littelfuse-Power-Semiconductors-DSEP30-12A-Datasheet?assetguid=033e234f-6b9f-407d-a69d-d50c57e6360e Description: DIODE STANDARD 1200V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.74 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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VHF28-16io5 VHF28-16io5 IXYS media?resourcetype=datasheets&itemid=53a2a245-3706-4f25-a16e-0c475c89ae29&filename=littelfuse%2520power%2520semiconductors%2520vhf28%2520datasheet.pdf Description: BRIDGE RECT SGL PHASE 1600V 32A
Packaging: Bulk
Package / Case: X118
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 65 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 330A
Number of SCRs, Diodes: 2 SCRs, 2 Diodes
Current - On State (It (AV)) (Max): 28 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - Off State: 1.6 kV
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DSS16-0045A DSS16-0045A IXYS PdfFile757521.pdf Description: DIODE SCHOTTKY 45V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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500+2.18 EUR
1000+2.01 EUR
2000+1.87 EUR
5000+1.73 EUR
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DSS2X61-0045A DSS2X61-0045A IXYS DSS2x61-0045A.pdf description Description: DIODE MOD SCHOTT 45V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
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DSSK40-0015B DSSK40-0015B IXYS media?resourcetype=datasheets&itemid=c448beda-93b9-4105-8529-575e1f061bd8&filename=Littelfuse-Power-Semiconductors-DSSK40-0015B-Datasheet Description: DIODE ARR SCHOTT 15V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 mA @ 15 V
Produkt ist nicht verfügbar
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DSSK60-0045A DSSK60-0045A IXYS DSSK60-0045A.pdf Description: DIODE ARR SCHOTT 45V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
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DSSK70-0015B DSSK70-0015B IXYS DSSK70-0015B.pdf Description: DIODE ARR SCHOTT 15V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 35 A
Current - Reverse Leakage @ Vr: 20 mA @ 15 V
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IXFX120N20 IXFX120N20 IXYS 98636.pdf Description: MOSFET N-CH 200V 120A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
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IXFH15N80 IXFH15N80 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH15N80-Datasheet.PDF?assetguid=C051C93F-C995-4FF8-9823-9392F913C8C3 Description: MOSFET N-CH 800V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 25 V
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IXFH26N50Q IXYS Description: MOSFET N-CH 500V 26A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
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IXFH32N50 IXFH32N50 IXYS Description: MOSFET N-CH 500V 32A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 15A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
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IXFH40N30Q IXFH40N30Q IXYS littelfuse-discrete-mosfets-ixf-40n30q-datasheet?assetguid=f78be03e-d57e-4119-ad68-2f01186af0ab Description: MOSFET N-CH 300V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
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IXFH58N20Q IXFH58N20Q IXYS 98523.pdf Description: MOSFET N-CH 200V 58A TO-247AD
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IXFH80N10Q IXFH80N10Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh80n10q_datasheet.pdf.pdf Description: MOSFET N-CH 100V 80A TO-247AD
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IXFK55N50 IXFK55N50 IXYS media?resourcetype=datasheets&itemid=7f724954-c5b4-4c7e-b19d-87773ab9b1fe&filename=littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_55n50_datasheet.pdf Description: MOSFET N-CH 500V 55A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
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IXFN180N20 IXFN180N20 IXYS description Description: MOSFET N-CH 200V 180A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 660 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22000 pF @ 25 V
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IXFN36N100 IXFN36N100 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn36n100_datasheet.pdf.pdf description Description: MOSFET N-CH 1KV 36A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
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IXFN44N50 IXFN44N50 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-4-N50-Datasheet.PDF?assetguid=887754DE-8CB1-4B0F-B5B9-F6A862E6ADE4 Description: MOSFET N-CH 500V 44A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
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IXFX15N100 IXYS Description: MOSFET N-CH 1000V 15A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 7.5A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXFX180N10 IXFX180N10 IXYS Description: MOSFET N-CH 100V 180A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 90A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
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IXFX55N50 IXFX55N50 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfx50n50_datasheet.pdf.pdf Description: MOSFET N-CH 500V 55A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 500mA, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
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IXGH24N60B IXGH24N60B IXYS Description: IGBT 600V 48A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 600µJ (on), 800µJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
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IXGH24N60C IXYS Description: IGBT 600V 48A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/75ns
Switching Energy: 240µJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
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IXGH30N60BD1 IXGH30N60BD1 IXYS Description: IGBT 600V 60A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/130ns
Switching Energy: 1mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IXGH32N60C IXGH32N60C IXYS littelfuse-discrete-igbts-ixgh32n60c-datasheet?assetguid=c8599d73-8f69-41fd-a637-c2ef7688fe7e Description: IGBT 600V 60A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/85ns
Switching Energy: 320µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
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IXGH32N60CD1 IXYS Description: IGBT 600V 60A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/85ns
Switching Energy: 320µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
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IXGH50N60B IXGH50N60B IXYS Description: IGBT 600V 75A 300W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/150ns
Switching Energy: 3mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 160 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
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IXSH30N60CD1 IXSH30N60CD1 IXYS Description: IGBT 600V 55A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 700µJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
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MCC26-16io1B MCC26-16io1B IXYS MCC26-16io1B.pdf Description: THYRISTOR MODULE 1600V 2X32A
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 32 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 50 A
Voltage - Off State: 1.6 kV
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MCC95-12io1B MCC95-12io1B IXYS Littelfuse-Power-Semiconductors-MCC95-12io1B-Datasheet?assetguid=005171c0-3376-443b-97d3-45f83c02df7b Description: SCR MODULE 1.2KV 180A TO-240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 180 A
Voltage - Off State: 1.2 kV
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IXBD4410PI IXBD4410PI IXYS Description: IC GATE DRVR LOW-SIDE 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 16-DIP
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1V, 3.65V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DSSK70-008A DSSK70-008A IXYS L249.pdf Description: DIODE ARRAY SCHOTTKY 80V TO247AD
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DSAI17-16A DSAI17-16A IXYS DS17_DSI17_DSA17_DSAI17.pdf Description: DIODE AVALANCHE 1.6KV 25A DO203
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IXGH32N60BU1 IXGH32N60BU1 IXYS Description: IGBT 600V 60A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 600µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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DSA17-16A DSA17-16A IXYS DS17_DSI17_DSA17_DSAI17.pdf Description: DIODE AVALANCHE 1.6KV 25A DO203
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DSEI 2X61-02A DSEI 2X61-02A IXYS L240.pdf Description: DIODE MODULE 200V 71A SOT227B
Produkt ist nicht verfügbar
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IXFN150N10 IXFK100N10%2C%20IXFN150N10.pdf
IXFN150N10
Hersteller: IXYS
Description: MOSFET N-CH 100V 150A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN106N20 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf____n20_datasheet.pdf.pdf
IXFN106N20
Hersteller: IXYS
Description: MOSFET N-CH 200V 106A SOT-227B
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 521W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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CS8-08IO2 CS8.pdf
CS8-08IO2
Hersteller: IXYS
Description: SCR PHASE CONTROL 800V 16A TO-64
Produkt ist nicht verfügbar
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CS8-12IO2 CS8.pdf
CS8-12IO2
Hersteller: IXYS
Description: SCR 1.2KV 25A TO64
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 25 A
Supplier Device Package: TO-64
Current - Off State (Max): 3 mA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 16 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 270A
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Hold (Ih) (Max): 80 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis, Stud Mount
Package / Case: TO-208AB, TO-64-3, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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CS23-08IO2
CS23-08IO2
Hersteller: IXYS
Description: SCR 800V 50A TO208AA
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 50 A
Part Status: Obsolete
Supplier Device Package: TO-208AA (TO-48)
Current - Off State (Max): 3 mA
Voltage - On State (Vtm) (Max): 1.8 V
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 32 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 450A, 480A
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Hold (Ih) (Max): 100 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis, Stud Mount
Package / Case: TO-208AA, TO-48-3, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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CS23-12IO2
Hersteller: IXYS
Description: SCR 1.2KV 50A TO-208AA (TO-48)
Packaging: Bulk
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 450A, 480A
Current - On State (It (AV)) (Max): 32 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 3 mA
Supplier Device Package: TO-208AA (TO-48)
Current - On State (It (RMS)) (Max): 50 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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CS23-16IO2 L105.pdf
CS23-16IO2
Hersteller: IXYS
Description: SCR PHASE CONTROL 1600V 25A TO48
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CS35-08IO4 L106.pdf
CS35-08IO4
Hersteller: IXYS
Description: SCR PHASE CONTROL 800V 60A TO-65
auf Bestellung 65 Stücke:
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CS35-12IO4
CS35-12IO4
Hersteller: IXYS
Description: SCR 1.2KV 120A TO-208AC (TO-65)
Packaging: Bulk
Package / Case: TO-208AC, TO-65-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 80 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1200A, 1340A
Current - On State (It (AV)) (Max): 69 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-208AC (TO-65)
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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CS35-14IO4 L106.pdf
CS35-14IO4
Hersteller: IXYS
Description: SCR PHASE CONTROL 1400V 60A TO65
Produkt ist nicht verfügbar
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MCC95-16io8B media?resourcetype=datasheets&itemid=44590aec-1d96-4bcc-b367-9d3f61bb33b5&filename=Littelfuse-Power-Semiconductors-MCC95-16io8B-Datasheet
MCC95-16io8B
Hersteller: IXYS
Description: THYRISTOR MODULE 1600V TO-240AA
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 180 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 116 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Bulk
Produkt ist nicht verfügbar
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MCC95-16io1B Littelfuse-Power-Semiconductors-MCC95-16io1B-Datasheet?assetguid=cdfd30f8-3ffa-41d5-a193-6bf6bcc7d3e7
MCC95-16io1B
Hersteller: IXYS
Description: SCR MODULE 1.6KV 180A TO-240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 180 A
Voltage - Off State: 1.6 kV
auf Bestellung 7 Stücke:
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1+78.21 EUR
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DSEI2X30-10B 238_DSEI2x30-10B_DSEI2x31-10B.pdf
DSEI2X30-10B
Hersteller: IXYS
Description: DIODE MOD GP 1000V 30A SOT227B
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SOT-227B
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 750 µA @ 1000 V
auf Bestellung 95 Stücke:
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1+56.6 EUR
10+41.52 EUR
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DSEI2X61-12B description Littelfuse-Power-Semiconductors-DSEI2x61-12B-Datasheet?assetguid=063b5a30-c723-4c85-b69d-7d14b1f3d707
DSEI2X61-12B
Hersteller: IXYS
Description: DIODE MOD GP 1200V 52A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 52A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 2.2 mA @ 1200 V
auf Bestellung 348 Stücke:
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AnzahlPrivatkunde
1+72.64 EUR
10+54.11 EUR
100+46.47 EUR
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IXFN73N30 description 92805.pdf
IXFN73N30
Hersteller: IXYS
Description: MOSFET N-CH 300V 73A SOT-227B
Produkt ist nicht verfügbar
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MCC162-16io1 Littelfuse-Power-Semiconductors-MCC162-16io1-Datasheet?assetguid=b0aedb99-caa9-46bd-8368-951f2bef3718
MCC162-16io1
Hersteller: IXYS
Description: SCR MODULE 1.6KV 300A Y4-M6
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 190 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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MCC56-12io8B Littelfuse-Power-Semiconductors-MCC56-12io8B-Datasheet?assetguid=6112757c-38f9-4ad0-bb04-1bd46ff25d0f
MCC56-12io8B
Hersteller: IXYS
Description: SCR MODULE 1.2KV 100A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 64 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 100 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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DSEI2X101-06A Littelfuse-Power-Semiconductors-DSEI2x101-06A-Datasheet?assetguid=480047e3-30ec-4e0b-b058-787e0545fd19
DSEI2X101-06A
Hersteller: IXYS
Description: DIODE MODULE GP 600V 96A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 96A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
auf Bestellung 1076 Stücke:
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AnzahlPrivatkunde
1+77.96 EUR
10+58.19 EUR
100+50.35 EUR
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MII100-12A3
MII100-12A3
Hersteller: IXYS
Description: IGBT MODULE 1200V 135A 560W Y4M5
Packaging: Bulk
Package / Case: Y4-M5
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Y4-M5
IGBT Type: NPT
Current - Collector (Ic) (Max): 135 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 560 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V
Produkt ist nicht verfügbar
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IXTH40N30 media?resourcetype=datasheets&itemid=8B57C975-ED35-4376-8589-EA56B60A449B&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXTH40N30-Datasheet.PDF
IXTH40N30
Hersteller: IXYS
Description: MOSFET N-CH 300V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
Produkt ist nicht verfügbar
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DSA2-16A DS2_DSA2.pdf
DSA2-16A
Hersteller: IXYS
Description: DIODE AVALANCHE 1600V 3.6A AXIAL
auf Bestellung 850 Stücke:
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DSEI2X121-02A Littelfuse-Power-Semiconductors-DSEI2x121-02A-Datasheet?assetguid=04d240e8-8e87-4d79-8545-f189a5c9a116
DSEI2X121-02A
Hersteller: IXYS
Description: DIODE MOD GP 200V 123A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 123A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
auf Bestellung 665 Stücke:
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1+74.04 EUR
10+55.2 EUR
100+47.59 EUR
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DSEP2X61-06A description media?resourcetype=datasheets&itemid=5f766602-43a9-430e-baba-5913171f6b59&filename=Littelfuse-Power-Semiconductors-DSEP2x61-06A-Datasheet
DSEP2X61-06A
Hersteller: IXYS
Description: DIODE MODULE GP 600V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A
Current - Reverse Leakage @ Vr: 650 µA @ 600 V
auf Bestellung 99 Stücke:
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AnzahlPrivatkunde
1+66.54 EUR
10+49.09 EUR
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DSEP30-06A Littelfuse-Power-Semiconductors-DSEP30-06A-Datasheet?assetguid=a1247dc4-0f2e-480c-b36e-0aa0ae250324
DSEP30-06A
Hersteller: IXYS
Description: DIODE STANDARD 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
auf Bestellung 446 Stücke:
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AnzahlPrivatkunde
2+14.14 EUR
30+8.15 EUR
120+6.83 EUR
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DSEP30-12A Littelfuse-Power-Semiconductors-DSEP30-12A-Datasheet?assetguid=033e234f-6b9f-407d-a69d-d50c57e6360e
DSEP30-12A
Hersteller: IXYS
Description: DIODE STANDARD 1200V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.74 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 1863 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.71 EUR
30+8.51 EUR
120+7.14 EUR
510+6.14 EUR
1020+5.78 EUR
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VHF28-16io5 media?resourcetype=datasheets&itemid=53a2a245-3706-4f25-a16e-0c475c89ae29&filename=littelfuse%2520power%2520semiconductors%2520vhf28%2520datasheet.pdf
VHF28-16io5
Hersteller: IXYS
Description: BRIDGE RECT SGL PHASE 1600V 32A
Packaging: Bulk
Package / Case: X118
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 65 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 330A
Number of SCRs, Diodes: 2 SCRs, 2 Diodes
Current - On State (It (AV)) (Max): 28 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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DSS16-0045A PdfFile757521.pdf
DSS16-0045A
Hersteller: IXYS
Description: DIODE SCHOTTKY 45V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.01 EUR
50+2.99 EUR
100+2.69 EUR
500+2.18 EUR
1000+2.01 EUR
2000+1.87 EUR
5000+1.73 EUR
10000+1.7 EUR
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DSS2X61-0045A description DSS2x61-0045A.pdf
DSS2X61-0045A
Hersteller: IXYS
Description: DIODE MOD SCHOTT 45V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Produkt ist nicht verfügbar
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DSSK40-0015B media?resourcetype=datasheets&itemid=c448beda-93b9-4105-8529-575e1f061bd8&filename=Littelfuse-Power-Semiconductors-DSSK40-0015B-Datasheet
DSSK40-0015B
Hersteller: IXYS
Description: DIODE ARR SCHOTT 15V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 mA @ 15 V
Produkt ist nicht verfügbar
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DSSK60-0045A DSSK60-0045A.pdf
DSSK60-0045A
Hersteller: IXYS
Description: DIODE ARR SCHOTT 45V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
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DSSK70-0015B DSSK70-0015B.pdf
DSSK70-0015B
Hersteller: IXYS
Description: DIODE ARR SCHOTT 15V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 35 A
Current - Reverse Leakage @ Vr: 20 mA @ 15 V
Produkt ist nicht verfügbar
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IXFX120N20 98636.pdf
IXFX120N20
Hersteller: IXYS
Description: MOSFET N-CH 200V 120A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
Produkt ist nicht verfügbar
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IXFH15N80 Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH15N80-Datasheet.PDF?assetguid=C051C93F-C995-4FF8-9823-9392F913C8C3
IXFH15N80
Hersteller: IXYS
Description: MOSFET N-CH 800V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 25 V
Produkt ist nicht verfügbar
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IXFH26N50Q
Hersteller: IXYS
Description: MOSFET N-CH 500V 26A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFH32N50
IXFH32N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 32A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 15A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Produkt ist nicht verfügbar
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IXFH40N30Q littelfuse-discrete-mosfets-ixf-40n30q-datasheet?assetguid=f78be03e-d57e-4119-ad68-2f01186af0ab
IXFH40N30Q
Hersteller: IXYS
Description: MOSFET N-CH 300V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
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IXFH58N20Q 98523.pdf
IXFH58N20Q
Hersteller: IXYS
Description: MOSFET N-CH 200V 58A TO-247AD
Produkt ist nicht verfügbar
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IXFH80N10Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh80n10q_datasheet.pdf.pdf
IXFH80N10Q
Hersteller: IXYS
Description: MOSFET N-CH 100V 80A TO-247AD
Produkt ist nicht verfügbar
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IXFK55N50 media?resourcetype=datasheets&itemid=7f724954-c5b4-4c7e-b19d-87773ab9b1fe&filename=littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_55n50_datasheet.pdf
IXFK55N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 55A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
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IXFN180N20 description
IXFN180N20
Hersteller: IXYS
Description: MOSFET N-CH 200V 180A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 660 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN36N100 description littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn36n100_datasheet.pdf.pdf
IXFN36N100
Hersteller: IXYS
Description: MOSFET N-CH 1KV 36A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN44N50 Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-4-N50-Datasheet.PDF?assetguid=887754DE-8CB1-4B0F-B5B9-F6A862E6ADE4
IXFN44N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 44A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Produkt ist nicht verfügbar
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IXFX15N100
Hersteller: IXYS
Description: MOSFET N-CH 1000V 15A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 7.5A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXFX180N10
IXFX180N10
Hersteller: IXYS
Description: MOSFET N-CH 100V 180A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 90A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFX55N50 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfx50n50_datasheet.pdf.pdf
IXFX55N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 55A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 500mA, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Produkt ist nicht verfügbar
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IXGH24N60B
IXGH24N60B
Hersteller: IXYS
Description: IGBT 600V 48A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 600µJ (on), 800µJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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IXGH24N60C
Hersteller: IXYS
Description: IGBT 600V 48A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/75ns
Switching Energy: 240µJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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IXGH30N60BD1
IXGH30N60BD1
Hersteller: IXYS
Description: IGBT 600V 60A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/130ns
Switching Energy: 1mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IXGH32N60C littelfuse-discrete-igbts-ixgh32n60c-datasheet?assetguid=c8599d73-8f69-41fd-a637-c2ef7688fe7e
IXGH32N60C
Hersteller: IXYS
Description: IGBT 600V 60A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/85ns
Switching Energy: 320µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IXGH32N60CD1
Hersteller: IXYS
Description: IGBT 600V 60A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/85ns
Switching Energy: 320µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IXGH50N60B
IXGH50N60B
Hersteller: IXYS
Description: IGBT 600V 75A 300W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/150ns
Switching Energy: 3mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 160 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXSH30N60CD1
IXSH30N60CD1
Hersteller: IXYS
Description: IGBT 600V 55A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 700µJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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MCC26-16io1B MCC26-16io1B.pdf
MCC26-16io1B
Hersteller: IXYS
Description: THYRISTOR MODULE 1600V 2X32A
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 32 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 50 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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MCC95-12io1B Littelfuse-Power-Semiconductors-MCC95-12io1B-Datasheet?assetguid=005171c0-3376-443b-97d3-45f83c02df7b
MCC95-12io1B
Hersteller: IXYS
Description: SCR MODULE 1.2KV 180A TO-240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 180 A
Voltage - Off State: 1.2 kV
auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+72.7 EUR
36+49.23 EUR
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IXBD4410PI
IXBD4410PI
Hersteller: IXYS
Description: IC GATE DRVR LOW-SIDE 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 16-DIP
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1V, 3.65V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DSSK70-008A L249.pdf
DSSK70-008A
Hersteller: IXYS
Description: DIODE ARRAY SCHOTTKY 80V TO247AD
Produkt ist nicht verfügbar
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DSAI17-16A DS17_DSI17_DSA17_DSAI17.pdf
DSAI17-16A
Hersteller: IXYS
Description: DIODE AVALANCHE 1.6KV 25A DO203
Produkt ist nicht verfügbar
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IXGH32N60BU1
IXGH32N60BU1
Hersteller: IXYS
Description: IGBT 600V 60A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 600µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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DSA17-16A DS17_DSI17_DSA17_DSAI17.pdf
DSA17-16A
Hersteller: IXYS
Description: DIODE AVALANCHE 1.6KV 25A DO203
Produkt ist nicht verfügbar
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DSEI 2X61-02A L240.pdf
DSEI 2X61-02A
Hersteller: IXYS
Description: DIODE MODULE 200V 71A SOT227B
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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