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VBO25-16AO2 VBO25-16AO2 IXYS VBO25.pdf Description: BRIDGE RECT 1P 1.6KV 38A FO-A
Packaging: Bulk
Package / Case: 4-Square, FO-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Avalanche
Supplier Device Package: FO-A
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 38 A
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 55 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
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IXGX120N60B IXGX120N60B IXYS Littelfuse-Discrete-IGBTs-PT-IXG-120N60B-Datasheet.PDF?assetguid=A076EF5D-7F0A-4278-8A8D-49BFCE52E6BE Description: IGBT PT 600V 200A PLUS247
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/200ns
Switching Energy: 2.4mJ (on), 5.5mJ (off)
Test Condition: 480V, 100A, 2.4Ohm, 15V
Gate Charge: 350 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 660 W
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IXDF402SI IXDF402SI IXYS 99015.pdf Description: DUAL 2AMP ULTRAFAST MOSFET 8SOIC
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MWI200-06A8 IXYS Description: IGBT MODULE 600V 225A 675W E3
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Current - Collector Cutoff (Max): 1.8 mA
Power - Max: 675 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 225 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: E3
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Bulk
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IXTH24N50 IXYS description Description: MOSFET N-CH 500V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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MCC95-12io8B MCC95-12io8B IXYS media?resourcetype=datasheets&itemid=9c33c466-4be4-4309-ac6a-aa83ccefaffb&filename=Littelfuse-Power-Semiconductors-MCC95-12io8B-Datasheet Description: THYRISTOR MODULE 1200V 2X116A
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 180 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 116 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Bulk
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IXDN414SI IXDN414SI IXYS Description: IC GATE DRVR LOW-SIDE 14SOIC
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 22ns, 20ns
Supplier Device Package: 14-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 35V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Part Status: Obsolete
Current - Peak Output (Source, Sink): 14A, 14A
DigiKey Programmable: Not Verified
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GWM120-0075P3 IXYS GWM120-0075P3.pdf Description: MOSFET 6N-CH 75V 118A ISOPLUS
Part Status: Obsolete
Supplier Device Package: ISOPLUS-DIL™
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 118A
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Flat Leads
Packaging: Tube
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MDD172-12N1 MDD172-12N1 IXYS MDD172-12N1.pdf Description: DIODE MODULE 1.2KV 190A Y4-M6
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y4-M6
Current - Average Rectified (Io) (per Diode): 190A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Packaging: Bulk
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IXTY1R6N50P IXTY1R6N50P IXYS DS99444F(IXTP-TY1R6N50P).pdf Description: MOSFET N-CH 500V 1.6A TO252
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IXTP1R6N50P IXTP1R6N50P IXYS 99444.pdf Description: MOSFET N-CH 500V 1.6A TO-220
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IXTY2R4N50P IXTY2R4N50P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 2.4A TO252
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IXTP2R4N50P IXTP2R4N50P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 2.4A TO220AB
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IXTY3N50P IXTY3N50P IXYS 99200.pdf Description: MOSFET N-CH 500V 3.6A DPAK
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IXTP3N50P IXTP3N50P IXYS 99200.pdf Description: MOSFET N-CH 500V 3.6A TO-220
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IXTA3N50P IXTA3N50P IXYS DS99200F(IXTY-TA-TP3N50P).pdf Description: MOSFET N-CH 500V 3.6A D2PAK
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IXTP5N50P IXTP5N50P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_5n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 4.8A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IXTA5N50P IXTA5N50P IXYS DS99446G(IXTU-TY-TA-TP5N50P).pdf Description: MOSFET N-CH 500V 4.8A TO263
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IXTP6N50P IXTP6N50P IXYS 99447.pdf Description: MOSFET N-CH 500V 6A TO-220
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IXTA6N50P IXTA6N50P IXYS 99447.pdf Description: MOSFET N-CH 500V 6A D2-PAK
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IXTP8N50P IXTP8N50P IXYS 99321.pdf Description: MOSFET N-CH 500V 8A TO-220
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IXTA8PN50P IXTA8PN50P IXYS Description: MOSFET N-CH 500V 8A D2-PAK
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IXTI12N50P IXYS DS99322F(IXTA-TI-TP12N50P).pdf Description: MOSFET N-CH 500V 12A TO262
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
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IXTP16N50P IXTP16N50P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-16N50P-Datasheet.PDF?assetguid=19BC6D28-7D7C-450A-98BC-0B3E7D6BA112 Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
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IXTA16N50P IXTA16N50P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-16N50P-Datasheet.PDF?assetguid=19BC6D28-7D7C-450A-98BC-0B3E7D6BA112 Description: MOSFET N-CH 500V 16A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
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IXTQ16N50P IXTQ16N50P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-16N50P-Datasheet.PDF?assetguid=19BC6D28-7D7C-450A-98BC-0B3E7D6BA112 Description: MOSFET N-CH 500V 16A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
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IXTV22N50P IXTV22N50P IXYS littelfuse-discrete-mosfets-ixt-22n50p-datasheet?assetguid=aa88a2b6-6037-4575-9c3c-a71212b980d4 Description: MOSFET N-CH 500V 22A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
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IXTV22N50PS IXYS 99351.pdf Description: MOSFET N-CH 500V 22A PLUS-220SMD
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS-220SMD
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PLUS-220SMD
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IXTV26N50P IXTV26N50P IXYS littelfuse-discrete-mosfets-ixt-26n50p-datasheet?assetguid=c3369cfd-a2aa-471a-8124-d6f2d10435ef Description: MOSFET N-CH 500V 26A PLUS220
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS220
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3, Short Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
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IXTV26N50PS IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_26n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 26A PLUS-220SMD
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS-220SMD
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PLUS-220SMD
Packaging: Tube
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IXTQ26N50P IXTQ26N50P IXYS littelfuse-discrete-mosfets-ixt-26n50p-datasheet?assetguid=c3369cfd-a2aa-471a-8124-d6f2d10435ef Description: MOSFET N-CH 500V 26A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
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IXTC26N50P IXTC26N50P IXYS Description: MOSFET N-CH 500V 15A ISOPLUS220
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
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IXTV30N50P IXTV30N50P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_30n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 30A PLUS220
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IXTV30N50PS IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_30n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 30A PLUS-220SMD
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IXTH30N50P IXTH30N50P IXYS media?resourcetype=datasheets&itemid=FFA26B35-B54D-41D6-9A95-DC29A86831F6&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-30N50P-Datasheet.PDF Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
auf Bestellung 420 Stücke:
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1+22.05 EUR
30+13.17 EUR
120+11.22 EUR
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IXTQ30N50P IXTQ30N50P IXYS media?resourcetype=datasheets&itemid=FFA26B35-B54D-41D6-9A95-DC29A86831F6&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-30N50P-Datasheet.PDF Description: MOSFET N-CH 500V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 300 Stücke
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IXTT30N50P IXTT30N50P IXYS media?resourcetype=datasheets&itemid=FFA26B35-B54D-41D6-9A95-DC29A86831F6&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-30N50P-Datasheet.PDF Description: MOSFET N-CH 500V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 300 Stücke
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IXTV36N50P IXTV36N50P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_36n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 36A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Produkt ist nicht verfügbar
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IXTV36N50PS IXYS littelfuse-discrete-mosfets-ixt-36n50p-datasheet?assetguid=3c86aff5-0579-4021-b7cc-ff31ec4a602e Description: MOSFET N-CH 500V 36A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Produkt ist nicht verfügbar
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IXTQ36N50P IXTQ36N50P IXYS media?resourcetype=datasheets&itemid=3C86AFF5-0579-4021-B7CC-FF31EC4A602E&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-36N50P-Datasheet.PDF Description: MOSFET N-CH 500V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
auf Bestellung 984 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.33 EUR
30+16.66 EUR
120+14.33 EUR
510+13.09 EUR
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IXTY1R4N60P IXTY1R4N60P IXYS IXT(P,U,Y)%201R4N60P.pdf Description: MOSFET N-CH 600V 1.4A TO252
Produkt ist nicht verfügbar
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IXTP1R4N60P IXTP1R4N60P IXYS IXT%28P%2CU%2CY%29%201R4N60P.pdf Description: MOSFET N-CH 600V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 700mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 25µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
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IXTY2N60P IXTY2N60P IXYS littelfuse-discrete-mosfets-ixty2n60p-datasheet?assetguid=3b3ab201-bd16-4211-a930-5183c3a0bd72 Description: MOSFET N-CH 600V 2A TO252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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IXTP2N60P IXTP2N60P IXYS littelfuse-discrete-mosfets-ixty2n60p-datasheet?assetguid=3b3ab201-bd16-4211-a930-5183c3a0bd72 Description: MOSFET N-CH 600V 2A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTY3N60P IXTY3N60P IXYS 99449.pdf Description: MOSFET N-CH 600V 3A D-PAK
Produkt ist nicht verfügbar
 Mindestbestellmenge: 70 Stücke
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IXTP3N60P IXTP3N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_3n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 3A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 411 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTA3N60P IXTA3N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_3n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 3A TO263
Produkt ist nicht verfügbar
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IXTP4N60P IXYS Description: MOSFET N-CH 600V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA4N60P IXTA4N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtu4n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 4A TO263
Produkt ist nicht verfügbar
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IXTP5N60P IXTP5N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixta5n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA5N60P IXTA5N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixta5n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 5A TO263
Produkt ist nicht verfügbar
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IXTP7N60P IXTP7N60P IXYS littelfuse-discrete-mosfets-ixtp7n60p-datasheet?assetguid=ab10706a-fa1a-44a3-b1a3-67d1fa0b11a4 Description: MOSFET N-CH 600V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA7N60P IXTA7N60P IXYS littelfuse-discrete-mosfets-ixtp7n60p-datasheet?assetguid=ab10706a-fa1a-44a3-b1a3-67d1fa0b11a4 Description: MOSFET N-CH 600V 7A D2-PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-263AA
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP10N60PM IXTP10N60PM IXYS littelfuse-discrete-mosfets-ixtp10n60pm-datasheet?assetguid=8f69747c-e883-444b-8bcb-7c0146d6d406 Description: MOSFET N-CH 600V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
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IXTI10N60P IXYS IXTA%2CI%2CP%2010N60P.pdf Description: MOSFET N-CH 600V 10A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
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IXTP10N60P IXTP10N60P IXYS media?resourcetype=datasheets&itemid=2CD94402-C675-4847-A76E-45DC222A7AF8&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-10N60P-Datasheet.PDF Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 300 Stücke
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IXTA10N60P IXTA10N60P IXYS media?resourcetype=datasheets&itemid=2CD94402-C675-4847-A76E-45DC222A7AF8&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-10N60P-Datasheet.PDF Description: MOSFET N-CH 600V 10A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
300+4.27 EUR
Mindestbestellmenge: 300 Stücke
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IXTP14N60P IXTP14N60P IXYS media?resourcetype=datasheets&itemid=3B19C3E9-2045-4609-909F-D45AFEA45CD6&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-14N60P-Datasheet.PDF Description: MOSFET N-CH 600V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 177 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.34 EUR
50+6.54 EUR
100+5.99 EUR
Mindestbestellmenge: 2 Stücke
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IXTA14N60P IXTA14N60P IXYS media?resourcetype=datasheets&itemid=3B19C3E9-2045-4609-909F-D45AFEA45CD6&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-14N60P-Datasheet.PDF Description: MOSFET N-CH 600V 14A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 189 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.57 EUR
50+6.68 EUR
100+6.1 EUR
Mindestbestellmenge: 2 Stücke
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IXTQ14N60P IXTQ14N60P IXYS littelfuse-discrete-mosfets-ixt-14n60p-datasheet?assetguid=3b19c3e9-2045-4609-909f-d45afea45cd6 Description: MOSFET N-CH 600V 14A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
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VBO25-16AO2 VBO25.pdf
VBO25-16AO2
Hersteller: IXYS
Description: BRIDGE RECT 1P 1.6KV 38A FO-A
Packaging: Bulk
Package / Case: 4-Square, FO-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Avalanche
Supplier Device Package: FO-A
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 38 A
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 55 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
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AnzahlPrivatkunde
1+78.81 EUR
10+58.87 EUR
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IXGX120N60B Littelfuse-Discrete-IGBTs-PT-IXG-120N60B-Datasheet.PDF?assetguid=A076EF5D-7F0A-4278-8A8D-49BFCE52E6BE
IXGX120N60B
Hersteller: IXYS
Description: IGBT PT 600V 200A PLUS247
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/200ns
Switching Energy: 2.4mJ (on), 5.5mJ (off)
Test Condition: 480V, 100A, 2.4Ohm, 15V
Gate Charge: 350 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 660 W
Produkt ist nicht verfügbar
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IXDF402SI 99015.pdf
IXDF402SI
Hersteller: IXYS
Description: DUAL 2AMP ULTRAFAST MOSFET 8SOIC
Produkt ist nicht verfügbar
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MWI200-06A8
Hersteller: IXYS
Description: IGBT MODULE 600V 225A 675W E3
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Current - Collector Cutoff (Max): 1.8 mA
Power - Max: 675 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 225 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: E3
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Bulk
Produkt ist nicht verfügbar
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IXTH24N50 description
Hersteller: IXYS
Description: MOSFET N-CH 500V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
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MCC95-12io8B media?resourcetype=datasheets&itemid=9c33c466-4be4-4309-ac6a-aa83ccefaffb&filename=Littelfuse-Power-Semiconductors-MCC95-12io8B-Datasheet
MCC95-12io8B
Hersteller: IXYS
Description: THYRISTOR MODULE 1200V 2X116A
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 180 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 116 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Bulk
Produkt ist nicht verfügbar
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IXDN414SI
IXDN414SI
Hersteller: IXYS
Description: IC GATE DRVR LOW-SIDE 14SOIC
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 22ns, 20ns
Supplier Device Package: 14-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 35V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Part Status: Obsolete
Current - Peak Output (Source, Sink): 14A, 14A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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GWM120-0075P3 GWM120-0075P3.pdf
Hersteller: IXYS
Description: MOSFET 6N-CH 75V 118A ISOPLUS
Part Status: Obsolete
Supplier Device Package: ISOPLUS-DIL™
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 118A
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Flat Leads
Packaging: Tube
Produkt ist nicht verfügbar
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MDD172-12N1 MDD172-12N1.pdf
MDD172-12N1
Hersteller: IXYS
Description: DIODE MODULE 1.2KV 190A Y4-M6
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y4-M6
Current - Average Rectified (Io) (per Diode): 190A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Packaging: Bulk
Produkt ist nicht verfügbar
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IXTY1R6N50P DS99444F(IXTP-TY1R6N50P).pdf
IXTY1R6N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 1.6A TO252
Produkt ist nicht verfügbar
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IXTP1R6N50P 99444.pdf
IXTP1R6N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 1.6A TO-220
Produkt ist nicht verfügbar
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IXTY2R4N50P littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n50p_datasheet.pdf.pdf
IXTY2R4N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 2.4A TO252
Produkt ist nicht verfügbar
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IXTP2R4N50P littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n50p_datasheet.pdf.pdf
IXTP2R4N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 2.4A TO220AB
Produkt ist nicht verfügbar
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IXTY3N50P 99200.pdf
IXTY3N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 3.6A DPAK
Produkt ist nicht verfügbar
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IXTP3N50P 99200.pdf
IXTP3N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 3.6A TO-220
Produkt ist nicht verfügbar
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IXTA3N50P DS99200F(IXTY-TA-TP3N50P).pdf
IXTA3N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 3.6A D2PAK
Produkt ist nicht verfügbar
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IXTP5N50P littelfuse_discrete_mosfets_n-channel_standard_ixt_5n50p_datasheet.pdf.pdf
IXTP5N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 4.8A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTA5N50P DS99446G(IXTU-TY-TA-TP5N50P).pdf
IXTA5N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 4.8A TO263
Produkt ist nicht verfügbar
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IXTP6N50P 99447.pdf
IXTP6N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 6A TO-220
Produkt ist nicht verfügbar
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IXTA6N50P 99447.pdf
IXTA6N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 6A D2-PAK
Produkt ist nicht verfügbar
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IXTP8N50P 99321.pdf
IXTP8N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 8A TO-220
Produkt ist nicht verfügbar
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IXTA8PN50P
IXTA8PN50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 8A D2-PAK
Produkt ist nicht verfügbar
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IXTI12N50P DS99322F(IXTA-TI-TP12N50P).pdf
Hersteller: IXYS
Description: MOSFET N-CH 500V 12A TO262
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Produkt ist nicht verfügbar
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IXTP16N50P Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-16N50P-Datasheet.PDF?assetguid=19BC6D28-7D7C-450A-98BC-0B3E7D6BA112
IXTP16N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 158 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.34 EUR
50+6.54 EUR
100+5.99 EUR
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IXTA16N50P Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-16N50P-Datasheet.PDF?assetguid=19BC6D28-7D7C-450A-98BC-0B3E7D6BA112
IXTA16N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 16A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
300+4.39 EUR
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IXTQ16N50P Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-16N50P-Datasheet.PDF?assetguid=19BC6D28-7D7C-450A-98BC-0B3E7D6BA112
IXTQ16N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 16A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.04 EUR
30+6.27 EUR
120+5.22 EUR
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IXTV22N50P littelfuse-discrete-mosfets-ixt-22n50p-datasheet?assetguid=aa88a2b6-6037-4575-9c3c-a71212b980d4
IXTV22N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 22A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
Produkt ist nicht verfügbar
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IXTV22N50PS 99351.pdf
Hersteller: IXYS
Description: MOSFET N-CH 500V 22A PLUS-220SMD
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS-220SMD
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PLUS-220SMD
Produkt ist nicht verfügbar
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IXTV26N50P littelfuse-discrete-mosfets-ixt-26n50p-datasheet?assetguid=c3369cfd-a2aa-471a-8124-d6f2d10435ef
IXTV26N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 26A PLUS220
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS220
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3, Short Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Produkt ist nicht verfügbar
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IXTV26N50PS littelfuse_discrete_mosfets_n-channel_standard_ixt_26n50p_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 500V 26A PLUS-220SMD
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS-220SMD
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PLUS-220SMD
Packaging: Tube
Produkt ist nicht verfügbar
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IXTQ26N50P littelfuse-discrete-mosfets-ixt-26n50p-datasheet?assetguid=c3369cfd-a2aa-471a-8124-d6f2d10435ef
IXTQ26N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 26A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.16 EUR
30+8.84 EUR
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IXTC26N50P
IXTC26N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 15A ISOPLUS220
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
Produkt ist nicht verfügbar
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IXTV30N50P littelfuse_discrete_mosfets_n-channel_standard_ixt_30n50p_datasheet.pdf.pdf
IXTV30N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A PLUS220
Produkt ist nicht verfügbar
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IXTV30N50PS littelfuse_discrete_mosfets_n-channel_standard_ixt_30n50p_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A PLUS-220SMD
Produkt ist nicht verfügbar
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IXTH30N50P media?resourcetype=datasheets&itemid=FFA26B35-B54D-41D6-9A95-DC29A86831F6&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-30N50P-Datasheet.PDF
IXTH30N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.05 EUR
30+13.17 EUR
120+11.22 EUR
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IXTQ30N50P media?resourcetype=datasheets&itemid=FFA26B35-B54D-41D6-9A95-DC29A86831F6&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-30N50P-Datasheet.PDF
IXTQ30N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXTT30N50P media?resourcetype=datasheets&itemid=FFA26B35-B54D-41D6-9A95-DC29A86831F6&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-30N50P-Datasheet.PDF
IXTT30N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Produkt ist nicht verfügbar
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IXTV36N50P littelfuse_discrete_mosfets_n-channel_standard_ixt_36n50p_datasheet.pdf.pdf
IXTV36N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 36A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Produkt ist nicht verfügbar
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IXTV36N50PS littelfuse-discrete-mosfets-ixt-36n50p-datasheet?assetguid=3c86aff5-0579-4021-b7cc-ff31ec4a602e
Hersteller: IXYS
Description: MOSFET N-CH 500V 36A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Produkt ist nicht verfügbar
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IXTQ36N50P media?resourcetype=datasheets&itemid=3C86AFF5-0579-4021-B7CC-FF31EC4A602E&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-36N50P-Datasheet.PDF
IXTQ36N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
auf Bestellung 984 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+27.33 EUR
30+16.66 EUR
120+14.33 EUR
510+13.09 EUR
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IXTY1R4N60P IXT(P,U,Y)%201R4N60P.pdf
IXTY1R4N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 1.4A TO252
Produkt ist nicht verfügbar
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IXTP1R4N60P IXT%28P%2CU%2CY%29%201R4N60P.pdf
IXTP1R4N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 700mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 25µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Produkt ist nicht verfügbar
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IXTY2N60P littelfuse-discrete-mosfets-ixty2n60p-datasheet?assetguid=3b3ab201-bd16-4211-a930-5183c3a0bd72
IXTY2N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 2A TO252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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IXTP2N60P littelfuse-discrete-mosfets-ixty2n60p-datasheet?assetguid=3b3ab201-bd16-4211-a930-5183c3a0bd72
IXTP2N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 2A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTY3N60P 99449.pdf
IXTY3N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 3A D-PAK
Produkt ist nicht verfügbar
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IXTP3N60P littelfuse_discrete_mosfets_n-channel_standard_ixt_3n60p_datasheet.pdf.pdf
IXTP3N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 3A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 411 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTA3N60P littelfuse_discrete_mosfets_n-channel_standard_ixt_3n60p_datasheet.pdf.pdf
IXTA3N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 3A TO263
Produkt ist nicht verfügbar
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IXTP4N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA4N60P littelfuse_discrete_mosfets_n-channel_standard_ixtu4n60p_datasheet.pdf.pdf
IXTA4N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 4A TO263
Produkt ist nicht verfügbar
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IXTP5N60P littelfuse_discrete_mosfets_n-channel_standard_ixta5n60p_datasheet.pdf.pdf
IXTP5N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA5N60P littelfuse_discrete_mosfets_n-channel_standard_ixta5n60p_datasheet.pdf.pdf
IXTA5N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 5A TO263
Produkt ist nicht verfügbar
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IXTP7N60P littelfuse-discrete-mosfets-ixtp7n60p-datasheet?assetguid=ab10706a-fa1a-44a3-b1a3-67d1fa0b11a4
IXTP7N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA7N60P littelfuse-discrete-mosfets-ixtp7n60p-datasheet?assetguid=ab10706a-fa1a-44a3-b1a3-67d1fa0b11a4
IXTA7N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 7A D2-PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-263AA
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP10N60PM littelfuse-discrete-mosfets-ixtp10n60pm-datasheet?assetguid=8f69747c-e883-444b-8bcb-7c0146d6d406
IXTP10N60PM
Hersteller: IXYS
Description: MOSFET N-CH 600V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
Produkt ist nicht verfügbar
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IXTI10N60P IXTA%2CI%2CP%2010N60P.pdf
Hersteller: IXYS
Description: MOSFET N-CH 600V 10A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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IXTP10N60P media?resourcetype=datasheets&itemid=2CD94402-C675-4847-A76E-45DC222A7AF8&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-10N60P-Datasheet.PDF
IXTP10N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXTA10N60P media?resourcetype=datasheets&itemid=2CD94402-C675-4847-A76E-45DC222A7AF8&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-10N60P-Datasheet.PDF
IXTA10N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 10A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
300+4.27 EUR
Mindestbestellmenge: 300 Stücke
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IXTP14N60P media?resourcetype=datasheets&itemid=3B19C3E9-2045-4609-909F-D45AFEA45CD6&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-14N60P-Datasheet.PDF
IXTP14N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 177 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.34 EUR
50+6.54 EUR
100+5.99 EUR
Mindestbestellmenge: 2 Stücke
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IXTA14N60P media?resourcetype=datasheets&itemid=3B19C3E9-2045-4609-909F-D45AFEA45CD6&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-14N60P-Datasheet.PDF
IXTA14N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 14A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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IXTQ14N60P littelfuse-discrete-mosfets-ixt-14n60p-datasheet?assetguid=3b19c3e9-2045-4609-909f-d45afea45cd6
IXTQ14N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 14A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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