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SMCG6062E3/TR13 Microsemi Corporation SMC(G,J)6036-6072A,e3.pdf Description: TVS DIODE 73VWM 131VC DO215AB
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SMCG6066A/TR13 Microsemi Corporation SMC(G,J)6036-6072A,e3.pdf Description: TVS DIODE 110VWM 182VC DO215AB
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SMCG6067/TR13 Microsemi Corporation SMC(G,J)6036-6072A,e3.pdf Description: TVS DIODE 121VWM 223VC DO215AB
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SMCG6065/TR13 Microsemi Corporation SMC(G,J)6036-6072A,e3.pdf Description: TVS DIODE 95VWM 176VC DO215AB
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SMCG6069/TR13 Microsemi Corporation SMC(G,J)6036-6072A,e3.pdf Description: TVS DIODE 145VWM 274VC DO215AB
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SMCG6061AE3/TR13 Microsemi Corporation SMC(G,J)6036-6072A,e3.pdf Description: TVS DIODE 70VWM 113VC DO215AB
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SMCG6063A/TR13 Microsemi Corporation SMC(G,J)6036-6072A,e3.pdf Description: TVS DIODE 82VWM 137VC DO215AB
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SMCG6067A/TR13 Microsemi Corporation SMC(G,J)6036-6072A,e3.pdf Description: TVS DIODE 128VWM 213VC DO215AB
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SMCG6064/TR13 Microsemi Corporation SMC(G,J)6036-6072A,e3.pdf Description: TVS DIODE 90VWM 158VC DO215AB
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SMCG6065A/TR13 Microsemi Corporation SMC(G,J)6036-6072A,e3.pdf Description: TVS DIODE 100VWM 168VC DO215AB
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SMCG6067AE3/TR13 Microsemi Corporation SMC(G,J)6036-6072A,e3.pdf Description: TVS DIODE 128VWM 213VC DO215AB
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SMCG6062AE3/TR13 Microsemi Corporation SMC(G,J)6036-6072A,e3.pdf Description: TVS DIODE 75VWM 125VC DO215AB
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1N4700 (DO35) 1N4700 (DO35) Microsemi Corporation 125997-lds-0240-datasheet Description: DIODE ZENER 13V 500MW DO35
Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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MXP5KE120A MXP5KE120A Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAP5KE120A MAP5KE120A Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP5KE120A MP5KE120A Microsemi Corporation MP5KE5.0A-170CA%28e3%29.pdf Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXP5KE120Ae3 MXP5KE120Ae3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP5KE120Ae3 MP5KE120Ae3 Microsemi Corporation MP5KE5.0A-170CA%28e3%29.pdf Description: TVS DIODE 120VWM 193VC DO204AL
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 193V
Voltage - Breakdown (Min): 133V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 120V
Current - Peak Pulse (10/1000µs): 2A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
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MAP5KE120Ae3 MAP5KE120Ae3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 120VWM 193VC DO204AL
Current - Peak Pulse (10/1000µs): 2A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 193V
Voltage - Breakdown (Min): 133V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 120V
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2N7224 Microsemi Corporation 8924-lds-0102-datasheet Description: MOSFET N-CH 100V 34A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
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JANTX2N7224 Microsemi Corporation 8924-lds-0102-datasheet Description: MOSFET N-CH 100V 34A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
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JANTXV2N7224 Microsemi Corporation 8924-lds-0102-datasheet Description: MOSFET N-CH 100V 34A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
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JANTXV2N7224U Microsemi Corporation 125220-lds-0102-1-datasheet Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
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JAN2N7224 Microsemi Corporation 8924-lds-0102-datasheet Description: MOSFET N-CH 100V 34A TO254AA
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JANTX2N7224U Microsemi Corporation 125220-lds-0102-1-datasheet Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
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JAN2N7224U Microsemi Corporation 125220-lds-0102-1-datasheet Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
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2N7224U Microsemi Corporation 125220-lds-0102-1-datasheet Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
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APTGF25DSK120T3G Microsemi Corporation APTGF25DSK120T3G.pdf Description: IGBT MODULE 1200V 40A 208W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 208 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
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APTGF30X60T3G Microsemi Corporation APTGF30X60T3G.pdf Description: IGBT MODULE 600V 42A 140W SP3
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APTGF25DDA120T3G Microsemi Corporation APTGF25DDA120T3G.pdf Description: IGBT MODULE 1200V 40A 208W SP3
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APTGV75H60T3G Microsemi Corporation Description: IGBT MODULE 600V 100A 250W SP3
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APTGT20X60T3G Microsemi Corporation APTGT20X60T3G.pdf Description: IGBT MODULE 600V 32A 62W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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APTGT20H60T3G Microsemi Corporation 7789-aptgt20h60t3g-datasheet Description: IGBT MODULE 600V 32A 62W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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APTGV100H60T3G Microsemi Corporation Description: IGBT MODULE 600V 150A 340W SP3
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APTGT20DSK60T3G Microsemi Corporation 7787-aptgt20dsk60t3g-datasheet Description: IGBT MODULE 600V 32A 62W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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APTGF15X120T3G Microsemi Corporation APTGF15X120T3G.pdf Description: IGBT MODULE 1200V 25A 140W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
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MPLAD6.5KP130CA MPLAD6.5KP130CA Microsemi Corporation rf01083_rev_b.pdf Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31.1A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
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1N5524B (DO35) 1N5524B (DO35) Microsemi Corporation 123956-lds-0037-1-datasheet Description: DIODE ZENER 5.6V 500MW DO35
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ZLR88822L Microsemi Corporation Description: REFERENCE DESIGN ZL8882L
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DRF1202 Microsemi Corporation Description: IC PWR DRIVER N-CHANNEL 1:1
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DRF1203 Microsemi Corporation Description: IC PWR DRIVER N-CHANNEL 1:1
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P6KE47AE3/TR13 P6KE47AE3/TR13 Microsemi Corporation 10895-sa4-59-datasheet Description: TVS DIODE 40.2VWM 64.8VC AXIAL
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 9.3A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: T-18, Axial
Packaging: Tape & Reel (TR)
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1N4683 (DO35) 1N4683 (DO35) Microsemi Corporation 125997-lds-0240-datasheet Description: DIODE ZENER 3V 500MW DO35
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SBR3050E3 SBR3050E3 Microsemi Corporation 8499-coc-93-datasheet Description: DIODE SCHOTTKY 50V 30A DO203AA
Current - Reverse Leakage @ Vr: 1.5 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-203AA
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
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2EZ47D5 2EZ47D5 Microsemi Corporation 11109-sd8a-datasheet Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5DO41E3 2EZ47D5DO41E3 Microsemi Corporation 11109-sd8a-datasheet Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5DO41E3 2EZ47D5DO41E3 Microsemi Corporation 11109-sd8a-datasheet Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5/TR12 2EZ47D5/TR12 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5/TR8 2EZ47D5/TR8 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5E3/TR8 2EZ47D5E3/TR8 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5E3/TR12 2EZ47D5E3/TR12 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 47V 2W DO204AL
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1N5916BG 1N5916BG Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.25W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916BP/TR8 1N5916BP/TR8 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916BE3/TR13 1N5916BE3/TR13 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916BPE3/TR12 1N5916BPE3/TR12 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916BPE3/TR8 1N5916BPE3/TR8 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916BP/TR12 1N5916BP/TR12 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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APTGF150SK120TG Microsemi Corporation APTGF150SK120TG.pdf Description: IGBT MODULE 1200V 200A 961W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V
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S200-50 Microsemi Corporation 10768-s200-50reva-datasheet Description: RF TRANS NPN 110V 30MHZ 55HX
Package / Case: 55HX
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: 55HX
Frequency - Transition: 1.5MHz ~ 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Voltage - Collector Emitter Breakdown (Max): 110V
Current - Collector (Ic) (Max): 30A
Power - Max: 320W
Gain: 12dB ~ 14.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Chassis Mount
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APT33N90JCCU2 APT33N90JCCU2 Microsemi Corporation Description: MOSFET N-CH 900V 33A SOT227
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
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SMCG6062E3/TR13 SMC(G,J)6036-6072A,e3.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 73VWM 131VC DO215AB
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SMCG6066A/TR13 SMC(G,J)6036-6072A,e3.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 110VWM 182VC DO215AB
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SMCG6067/TR13 SMC(G,J)6036-6072A,e3.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 121VWM 223VC DO215AB
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SMCG6065/TR13 SMC(G,J)6036-6072A,e3.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 95VWM 176VC DO215AB
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SMCG6069/TR13 SMC(G,J)6036-6072A,e3.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 145VWM 274VC DO215AB
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SMCG6061AE3/TR13 SMC(G,J)6036-6072A,e3.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC DO215AB
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SMCG6063A/TR13 SMC(G,J)6036-6072A,e3.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 82VWM 137VC DO215AB
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SMCG6067A/TR13 SMC(G,J)6036-6072A,e3.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 128VWM 213VC DO215AB
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SMCG6064/TR13 SMC(G,J)6036-6072A,e3.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 90VWM 158VC DO215AB
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SMCG6065A/TR13 SMC(G,J)6036-6072A,e3.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 100VWM 168VC DO215AB
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SMCG6067AE3/TR13 SMC(G,J)6036-6072A,e3.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 128VWM 213VC DO215AB
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SMCG6062AE3/TR13 SMC(G,J)6036-6072A,e3.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 75VWM 125VC DO215AB
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1N4700 (DO35) 125997-lds-0240-datasheet
1N4700 (DO35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 13V 500MW DO35
Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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MXP5KE120A 11043-p5ke-datasheet
MXP5KE120A
Hersteller: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAP5KE120A 11043-p5ke-datasheet
MAP5KE120A
Hersteller: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP5KE120A MP5KE5.0A-170CA%28e3%29.pdf
MP5KE120A
Hersteller: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXP5KE120Ae3 11043-p5ke-datasheet
MXP5KE120Ae3
Hersteller: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP5KE120Ae3 MP5KE5.0A-170CA%28e3%29.pdf
MP5KE120Ae3
Hersteller: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC DO204AL
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 193V
Voltage - Breakdown (Min): 133V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 120V
Current - Peak Pulse (10/1000µs): 2A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
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MAP5KE120Ae3 11043-p5ke-datasheet
MAP5KE120Ae3
Hersteller: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC DO204AL
Current - Peak Pulse (10/1000µs): 2A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 193V
Voltage - Breakdown (Min): 133V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 120V
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2N7224 8924-lds-0102-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
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JANTX2N7224 8924-lds-0102-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
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JANTXV2N7224 8924-lds-0102-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
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JANTXV2N7224U 125220-lds-0102-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
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JAN2N7224 8924-lds-0102-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO254AA
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JANTX2N7224U 125220-lds-0102-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
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JAN2N7224U 125220-lds-0102-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
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2N7224U 125220-lds-0102-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
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APTGF25DSK120T3G APTGF25DSK120T3G.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 40A 208W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 208 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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APTGF30X60T3G APTGF30X60T3G.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 42A 140W SP3
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APTGF25DDA120T3G APTGF25DDA120T3G.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 40A 208W SP3
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APTGV75H60T3G
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 100A 250W SP3
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APTGT20X60T3G APTGT20X60T3G.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 32A 62W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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APTGT20H60T3G 7789-aptgt20h60t3g-datasheet
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 32A 62W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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APTGV100H60T3G
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 150A 340W SP3
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APTGT20DSK60T3G 7787-aptgt20dsk60t3g-datasheet
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 32A 62W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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APTGF15X120T3G APTGF15X120T3G.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 25A 140W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
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MPLAD6.5KP130CA rf01083_rev_b.pdf
MPLAD6.5KP130CA
Hersteller: Microsemi Corporation
Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31.1A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
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1N5524B (DO35) 123956-lds-0037-1-datasheet
1N5524B (DO35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.6V 500MW DO35
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ZLR88822L
Hersteller: Microsemi Corporation
Description: REFERENCE DESIGN ZL8882L
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DRF1202
Hersteller: Microsemi Corporation
Description: IC PWR DRIVER N-CHANNEL 1:1
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DRF1203
Hersteller: Microsemi Corporation
Description: IC PWR DRIVER N-CHANNEL 1:1
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P6KE47AE3/TR13 10895-sa4-59-datasheet
P6KE47AE3/TR13
Hersteller: Microsemi Corporation
Description: TVS DIODE 40.2VWM 64.8VC AXIAL
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 9.3A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: T-18, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N4683 (DO35) 125997-lds-0240-datasheet
1N4683 (DO35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3V 500MW DO35
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SBR3050E3 8499-coc-93-datasheet
SBR3050E3
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 50V 30A DO203AA
Current - Reverse Leakage @ Vr: 1.5 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-203AA
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
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2EZ47D5 11109-sd8a-datasheet
2EZ47D5
Hersteller: Microsemi Corporation
Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5DO41E3 11109-sd8a-datasheet
2EZ47D5DO41E3
Hersteller: Microsemi Corporation
Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5DO41E3 11109-sd8a-datasheet
2EZ47D5DO41E3
Hersteller: Microsemi Corporation
Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5/TR12 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ47D5/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5/TR8 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ47D5/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5E3/TR8 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ47D5E3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5E3/TR12 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ47D5E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 47V 2W DO204AL
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1N5916BG 10922-sa5-57-datasheet
1N5916BG
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.25W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916BP/TR8 10922-sa5-57-datasheet
1N5916BP/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916BE3/TR13 10922-sa5-57-datasheet
1N5916BE3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916BPE3/TR12 10922-sa5-57-datasheet
1N5916BPE3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916BPE3/TR8 10922-sa5-57-datasheet
1N5916BPE3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916BP/TR12 10922-sa5-57-datasheet
1N5916BP/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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APTGF150SK120TG APTGF150SK120TG.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 200A 961W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V
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S200-50 10768-s200-50reva-datasheet
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 110V 30MHZ 55HX
Package / Case: 55HX
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: 55HX
Frequency - Transition: 1.5MHz ~ 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Voltage - Collector Emitter Breakdown (Max): 110V
Current - Collector (Ic) (Max): 30A
Power - Max: 320W
Gain: 12dB ~ 14.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Chassis Mount
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APT33N90JCCU2
APT33N90JCCU2
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 900V 33A SOT227
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
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