Produkte > MICROSEMI CORPORATION > Alle Produkte des Herstellers MICROSEMI CORPORATION (11155) > Seite 151 nach 186
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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APTGT30H60T3G | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 90 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V |
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152OR-S300-OCXO | Microsemi Corporation | Description: NETWORK TIME SERVER |
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MXLPLAD7.5KP51AE3 | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Voltage - Reverse Standoff (Typ): 51V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Part Status: Active |
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MXLPLAD7.5KP51A | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Voltage - Reverse Standoff (Typ): 51V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Part Status: Active |
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MAPLAD7.5KP51A | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Voltage - Reverse Standoff (Typ): 51V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Part Status: Active |
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MPLAD7.5KP51A | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Voltage - Reverse Standoff (Typ): 51V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Part Status: Active |
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JANTX2N4857 | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS) Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: TO-18 Part Status: Obsolete Drain to Source Voltage (Vdss): 40 V Power - Max: 360 mW Resistance - RDS(On): 40 Ohms Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V |
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APTM50DHM35G | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 781W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 99A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP6 |
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APTC60DAM35T1G | Microsemi Corporation |
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APTM50DAM35TG | Microsemi Corporation |
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APT8018JN | Microsemi Corporation |
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APT40M42JN | Microsemi Corporation |
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1N4531UR | Microsemi Corporation |
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1N4531 | Microsemi Corporation |
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1N4534 | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: DO-204AG, DO-34, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-34 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V |
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2N6849 | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V |
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JANTXV2N6849 | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-205AF (TO-39) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V Qualification: MIL-PRF-19500/564 |
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JAN2N6849U | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: 18-CLCC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 18-ULCC (9.14x7.49) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V Qualification: MIL-PRF-19500/564 |
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JANTXV2N6849U | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: 18-CLCC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 18-ULCC (9.14x7.49) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V Qualification: MIL-PRF-19500/564 |
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JAN2N6849 | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-39 Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V Qualification: MIL-PRF-19500/564 |
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2N6849U | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: 18-CLCC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 4.1A, 10V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 18-ULCC (9.14x7.49) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V |
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SMCG6050AE3/TR13 | Microsemi Corporation |
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SMCG6050A/TR13 | Microsemi Corporation |
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APTM50DUM17G | Microsemi Corporation |
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JANTX1N4955DUS | Microsemi Corporation |
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LE51HR0164G | Microsemi Corporation | Description: BOARD LE792388VQC LE79272PQC |
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1N5914BG | Microsemi Corporation |
![]() Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 75 µA @ 1 V |
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1N5914BPE3/TR12 | Microsemi Corporation |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 75 µA @ 1 V |
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1N5914BPE3/TR8 | Microsemi Corporation |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 75 µA @ 1 V |
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1N5914BP/TR12 | Microsemi Corporation |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 75 µA @ 1 V |
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1N5914BE3/TR13 | Microsemi Corporation |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 75 µA @ 1 V |
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1N5914BP/TR8 | Microsemi Corporation |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 75 µA @ 1 V |
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SMBG5938B/TR13 | Microsemi Corporation |
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SMBG5938BE3/TR13 | Microsemi Corporation |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 38 Ohms Supplier Device Package: SMBG (DO-215AA) Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V |
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MAP5KE20A | Microsemi Corporation |
Description: TVS DIODE 20VWM 32.4VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 15.4A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MAP5KE20CAe3 | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 15.4A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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1.5KE20AE3/TR13 | Microsemi Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 54A Voltage - Reverse Standoff (Typ): 17.1V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 19V Voltage - Clamping (Max) @ Ipp: 27.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Obsolete |
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MSMBJ2K3.3 | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: SMBJ (DO-214AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 4.6V Voltage - Clamping (Max) @ Ipp: 5.8V Power - Peak Pulse: 2000W (2kW) Power Line Protection: No Part Status: Obsolete |
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MSKD200-08 | Microsemi Corporation |
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MSKD200-16 | Microsemi Corporation |
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MSKD200-12 | Microsemi Corporation |
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MSKD200-18 | Microsemi Corporation |
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LX8554-33CP | Microsemi Corporation |
![]() Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 5A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 10V Number of Regulators: 1 Supplier Device Package: TO-220, Power Voltage - Output (Min/Fixed): 3.3V Part Status: Obsolete PSRR: 83dB (120Hz) Voltage Dropout (Max): 1V @ 5A Protection Features: Over Temperature, Short Circuit |
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LX8554-33CDD | Microsemi Corporation |
![]() Packaging: Tube Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 5A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 10V Number of Regulators: 1 Supplier Device Package: TO-263, Power Voltage - Output (Min/Fixed): 3.3V Part Status: Obsolete PSRR: 83dB (120Hz) Voltage Dropout (Max): 1V @ 5A Protection Features: Over Temperature, Short Circuit |
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1N5224B (DO-35) | Microsemi Corporation |
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MAP5KE26A | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.9A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete |
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1075MP | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: 55FW-1 Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 7.6dB ~ 8.5dB Power - Max: 250W Current - Collector (Ic) (Max): 6.5A Voltage - Collector Emitter Breakdown (Max): 65V DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Frequency - Transition: 1.025GHz ~ 1.15GHz Supplier Device Package: 55FW-1 Part Status: Obsolete |
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MDS1100 | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: 55TU-1 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 8.9dB Power - Max: 8750W Current - Collector (Ic) (Max): 100A Voltage - Collector Emitter Breakdown (Max): 65V DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Frequency - Transition: 1.03GHz Supplier Device Package: 55TU-1 Part Status: Obsolete |
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MAP5KE160CAe3 | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1.9A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MAP5KE160CA | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1.9A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXLP5KE160CA | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1.9A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MPLAD6.5KP90Ae3 | Microsemi Corporation |
![]() Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 44.5A Voltage - Reverse Standoff (Typ): 90V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 100V Voltage - Clamping (Max) @ Ipp: 146V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No |
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2EZ10D5 | Microsemi Corporation |
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2EZ10D5/TR12 | Microsemi Corporation |
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2EZ10D5E3/TR8 | Microsemi Corporation |
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2EZ10D5/TR8 | Microsemi Corporation |
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Im Einkaufswagen Stück im Wert von UAH |
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2EZ10D5E3/TR12 | Microsemi Corporation |
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Im Einkaufswagen Stück im Wert von UAH |
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APT75DL60HJ | Microsemi Corporation |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
PAS6501B-F3GI | Microsemi Corporation | Description: IC ETHERNET I2C/MII/SPI 336FCBGA |
Produkt ist nicht verfügbar |
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JANTX1N4978CUS | Microsemi Corporation |
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Im Einkaufswagen Stück im Wert von UAH |
APTGT30H60T3G |
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Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 50A 90W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 90 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
Description: IGBT MODULE 600V 50A 90W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 90 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
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152OR-S300-OCXO |
Hersteller: Microsemi Corporation
Description: NETWORK TIME SERVER
Description: NETWORK TIME SERVER
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MXLPLAD7.5KP51AE3 |
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Hersteller: Microsemi Corporation
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Part Status: Active
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MXLPLAD7.5KP51A |
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Hersteller: Microsemi Corporation
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Part Status: Active
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MAPLAD7.5KP51A |
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Hersteller: Microsemi Corporation
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Part Status: Active
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MPLAD7.5KP51A |
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Hersteller: Microsemi Corporation
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Part Status: Active
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JANTX2N4857 |
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Hersteller: Microsemi Corporation
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
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APTM50DHM35G |
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Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 500V 99A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
Description: MOSFET 2N-CH 500V 99A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
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APTC60DAM35T1G |
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Hersteller: Microsemi Corporation
Description: MOSFET N-CH 600V 72A SP1
Description: MOSFET N-CH 600V 72A SP1
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APTM50DAM35TG |
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Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 99A SP4
Description: MOSFET N-CH 500V 99A SP4
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APT8018JN |
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Hersteller: Microsemi Corporation
Description: MOSFET N-CH 800V 40A ISOTOP
Description: MOSFET N-CH 800V 40A ISOTOP
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APT40M42JN |
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Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 86A ISOTOP
Description: MOSFET N-CH 400V 86A ISOTOP
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1N4531UR |
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Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 75V 125MA DO213AA
Description: DIODE GEN PURP 75V 125MA DO213AA
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1N4531 |
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Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 75V 125MA DO34
Description: DIODE GEN PURP 75V 125MA DO34
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1N4534 |
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Hersteller: Microsemi Corporation
Description: DIODE STANDARD 50V 150MA DO34
Packaging: Bulk
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-34
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Description: DIODE STANDARD 50V 150MA DO34
Packaging: Bulk
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-34
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
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2N6849 |
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Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Description: MOSFET P-CH 100V 6.5A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
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JANTXV2N6849 |
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Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A TO205AF
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-205AF (TO-39)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Qualification: MIL-PRF-19500/564
Description: MOSFET P-CH 100V 6.5A TO205AF
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-205AF (TO-39)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Qualification: MIL-PRF-19500/564
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JAN2N6849U |
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Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Qualification: MIL-PRF-19500/564
Description: MOSFET P-CH 100V 6.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Qualification: MIL-PRF-19500/564
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JANTXV2N6849U |
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Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Qualification: MIL-PRF-19500/564
Description: MOSFET P-CH 100V 6.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Qualification: MIL-PRF-19500/564
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JAN2N6849 |
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Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Qualification: MIL-PRF-19500/564
Description: MOSFET P-CH 100V 6.5A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Qualification: MIL-PRF-19500/564
Produkt ist nicht verfügbar
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2N6849U |
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Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4.1A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Description: MOSFET P-CH 100V 6.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4.1A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
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SMCG6050AE3/TR13 |
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Hersteller: Microsemi Corporation
Description: TVS DIODE 25VWM 41.4VC DO215AB
Description: TVS DIODE 25VWM 41.4VC DO215AB
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SMCG6050A/TR13 |
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Hersteller: Microsemi Corporation
Description: TVS DIODE 25VWM 41.4VC DO215AB
Description: TVS DIODE 25VWM 41.4VC DO215AB
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APTM50DUM17G |
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Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 500V 180A SP6
Description: MOSFET 2N-CH 500V 180A SP6
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JANTX1N4955DUS |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 7.5V 5W D5B
Description: DIODE ZENER 7.5V 5W D5B
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LE51HR0164G |
Hersteller: Microsemi Corporation
Description: BOARD LE792388VQC LE79272PQC
Description: BOARD LE792388VQC LE79272PQC
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1N5914BG |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.6V 1.25W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Description: DIODE ZENER 3.6V 1.25W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
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1N5914BPE3/TR12 |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.6V 1.5W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Description: DIODE ZENER 3.6V 1.5W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
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1N5914BPE3/TR8 |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.6V 1.5W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Description: DIODE ZENER 3.6V 1.5W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
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1N5914BP/TR12 |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.6V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Description: DIODE ZENER 3.6V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
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1N5914BE3/TR13 |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.6V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Description: DIODE ZENER 3.6V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
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1N5914BP/TR8 |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.6V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Description: DIODE ZENER 3.6V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
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SMBG5938B/TR13 |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 36V 2W SMBG
Description: DIODE ZENER 36V 2W SMBG
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SMBG5938BE3/TR13 |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 36V 2W SMBG
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 38 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V
Description: DIODE ZENER 36V 2W SMBG
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 38 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V
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MAP5KE20A |
Hersteller: Microsemi Corporation
Description: TVS DIODE 20VWM 32.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 20VWM 32.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAP5KE20CAe3 |
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Hersteller: Microsemi Corporation
Description: TVS DIODE 20VWM 32.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 20VWM 32.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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1.5KE20AE3/TR13 |
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Hersteller: Microsemi Corporation
Description: TVS DIODE 17.1VWM 27.7VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 17.1VWM 27.7VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
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MSMBJ2K3.3 |
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Hersteller: Microsemi Corporation
Description: TVS DIODE 3.3VWM 5.8VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.6V
Voltage - Clamping (Max) @ Ipp: 5.8V
Power - Peak Pulse: 2000W (2kW)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 3.3VWM 5.8VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.6V
Voltage - Clamping (Max) @ Ipp: 5.8V
Power - Peak Pulse: 2000W (2kW)
Power Line Protection: No
Part Status: Obsolete
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MSKD200-08 |
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Hersteller: Microsemi Corporation
Description: DIODE MODULE 800V 200A SD2
Description: DIODE MODULE 800V 200A SD2
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MSKD200-16 |
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Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.6KV 200A SD2
Description: DIODE MODULE 1.6KV 200A SD2
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MSKD200-12 |
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Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 200A SD2
Description: DIODE MODULE 1.2KV 200A SD2
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MSKD200-18 |
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Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.8KV 200A D2
Description: DIODE MODULE 1.8KV 200A D2
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LX8554-33CP |
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Hersteller: Microsemi Corporation
Description: IC REG LIN 3.3V 5A TO220 POWER
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: TO-220, Power
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 83dB (120Hz)
Voltage Dropout (Max): 1V @ 5A
Protection Features: Over Temperature, Short Circuit
Description: IC REG LIN 3.3V 5A TO220 POWER
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: TO-220, Power
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 83dB (120Hz)
Voltage Dropout (Max): 1V @ 5A
Protection Features: Over Temperature, Short Circuit
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LX8554-33CDD |
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Hersteller: Microsemi Corporation
Description: IC REG LIN 3.3V 5A TO263 POWER
Packaging: Tube
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: TO-263, Power
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 83dB (120Hz)
Voltage Dropout (Max): 1V @ 5A
Protection Features: Over Temperature, Short Circuit
Description: IC REG LIN 3.3V 5A TO263 POWER
Packaging: Tube
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: TO-263, Power
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 83dB (120Hz)
Voltage Dropout (Max): 1V @ 5A
Protection Features: Over Temperature, Short Circuit
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1N5224B (DO-35) |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 2.8V 500MW DO35
Description: DIODE ZENER 2.8V 500MW DO35
Produkt ist nicht verfügbar
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MAP5KE26A |
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Hersteller: Microsemi Corporation
Description: TVS DIODE 26VWM 42.1VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.9A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 26VWM 42.1VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.9A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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1075MP |
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Hersteller: Microsemi Corporation
Description: RF TRANS NPN 65V 1.15GHZ 55FW-1
Packaging: Bulk
Package / Case: 55FW-1
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 7.6dB ~ 8.5dB
Power - Max: 250W
Current - Collector (Ic) (Max): 6.5A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Supplier Device Package: 55FW-1
Part Status: Obsolete
Description: RF TRANS NPN 65V 1.15GHZ 55FW-1
Packaging: Bulk
Package / Case: 55FW-1
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 7.6dB ~ 8.5dB
Power - Max: 250W
Current - Collector (Ic) (Max): 6.5A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Supplier Device Package: 55FW-1
Part Status: Obsolete
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MDS1100 |
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Hersteller: Microsemi Corporation
Description: RF TRANS NPN 65V 1.03GHZ 55TU-1
Packaging: Bulk
Package / Case: 55TU-1
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8.9dB
Power - Max: 8750W
Current - Collector (Ic) (Max): 100A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Frequency - Transition: 1.03GHz
Supplier Device Package: 55TU-1
Part Status: Obsolete
Description: RF TRANS NPN 65V 1.03GHZ 55TU-1
Packaging: Bulk
Package / Case: 55TU-1
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8.9dB
Power - Max: 8750W
Current - Collector (Ic) (Max): 100A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Frequency - Transition: 1.03GHz
Supplier Device Package: 55TU-1
Part Status: Obsolete
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MAP5KE160CAe3 |
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Hersteller: Microsemi Corporation
Description: TVS DIODE 160VWM 259VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAP5KE160CA |
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Hersteller: Microsemi Corporation
Description: TVS DIODE 160VWM 259VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLP5KE160CA |
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Hersteller: Microsemi Corporation
Description: TVS DIODE 160VWM 259VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MPLAD6.5KP90Ae3 |
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Hersteller: Microsemi Corporation
Description: TVS DIODE 90VWM 146VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 44.5A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Description: TVS DIODE 90VWM 146VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 44.5A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
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2EZ10D5 |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 10V 2W DO204AL
Description: DIODE ZENER 10V 2W DO204AL
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2EZ10D5/TR12 |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 10V 2W DO204AL
Description: DIODE ZENER 10V 2W DO204AL
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2EZ10D5E3/TR8 |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 10V 2W DO204AL
Description: DIODE ZENER 10V 2W DO204AL
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2EZ10D5/TR8 |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 10V 2W DO204AL
Description: DIODE ZENER 10V 2W DO204AL
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2EZ10D5E3/TR12 |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 10V 2W DO204AL
Description: DIODE ZENER 10V 2W DO204AL
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APT75DL60HJ |
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Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1P 600V 75A SOT227
Description: BRIDGE RECT 1P 600V 75A SOT227
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PAS6501B-F3GI |
Hersteller: Microsemi Corporation
Description: IC ETHERNET I2C/MII/SPI 336FCBGA
Description: IC ETHERNET I2C/MII/SPI 336FCBGA
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JANTX1N4978CUS |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 68V 5W D5B
Description: DIODE ZENER 68V 5W D5B
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