Produkte > NVM
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| NVMFWS0D6N04XMT1G | onsemi | Description: SINGLE N-CHANNEL POWER MOSFET 40 | auf Bestellung 1533 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS0D6N04XMT1G | onsemi | MOSFETs 40V T10M IN S08FL GEN 2 PACKAGE | auf Bestellung 104 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS0D6N04XMT1G | onsemi | Description: SINGLE N-CHANNEL POWER MOSFET 40 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS0D7N04XMT1G | onsemi | Description: 40V T10M IN S08FL PACKAGE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 331A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Power Dissipation (Max): 134W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 180µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 74.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4657 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS0D7N04XMT1G | onsemi | Description: 40V T10M IN S08FL PACKAGE Input Capacitance (Ciss) (Max) @ Vds: 4657 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 74.5 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 3.5V @ 180µA Power Dissipation (Max): 134W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 331A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS0D7N04XMT1G | onsemi | MOSFETs 40V T10M IN S08FL PACKAGE | auf Bestellung 22808 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS0D9N04XMT1G | onsemi | MOSFETs 40V T10M IN S08FL PACKAGE | auf Bestellung 2281 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS0D9N04XMT1G | onsemi | Description: 40V T10M IN S08FL PACKAGE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 273A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V Power Dissipation (Max): 121W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 61.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3896 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 1380 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS0D9N04XMT1G | ONN | auf Bestellung 1300 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMFWS0D9N04XMT1G | onsemi | Description: 40V T10M IN S08FL PACKAGE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 273A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V Power Dissipation (Max): 121W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 61.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3896 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS1D1N04XMT1G | onsemi | Description: SINGLE N-CHANNEL POWER MOSFET 40 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS1D1N04XMT1G | ONSEMI | Description: ONSEMI - NVMFWS1D1N04XMT1G - Leistungs-MOSFET, n-Kanal, 40 V, 233 A, 1050 µohm, WFDFN, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code SVHC: Lead (25-Jun-2025) rohsCompliant: Y-EX euEccn: NLR isCanonical: N hazardous: false Drain-Source-Durchgangswiderstand: 1050µohm rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 1205 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFWS1D1N04XMT1G | ONN | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMFWS1D1N04XMT1G | ONSEMI | Description: ONSEMI - NVMFWS1D1N04XMT1G - Leistungs-MOSFET, n-Kanal, 40 V, 233 A, 1050 µohm, WFDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 233A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Gate-Source-Schwellenspannung, max.: 3.5V Verlustleistung: 104W SVHC: Lead (25-Jun-2025) Bauform - Transistor: WFDFN Anzahl der Pins: 5Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1050µohm | auf Bestellung 1205 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFWS1D1N04XMT1G | onsemi | Description: SINGLE N-CHANNEL POWER MOSFET 40 | auf Bestellung 674 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS1D1N04XMT1G | onsemi | MOSFETs 40V T10M IN S08FL PACKAGE | auf Bestellung 5721 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS1D3N04XMT1G | onsemi | Description: SINGLE N-CHANNEL POWER MOSFET 40 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS1D3N04XMT1G | onsemi | MOSFETs 40V T10M IN S08FL PACKAGE | auf Bestellung 198 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS1D3N04XMT1G | onsemi | Description: SINGLE N-CHANNEL POWER MOSFET 40 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS1D5N08XT1G | onsemi | Description: T10S 80V SG NCH MOSFET SO8FL HE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 253A (Tc) Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 330µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V Qualification: AEC-Q101 | auf Bestellung 1330 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS1D5N08XT1G | onsemi | MOSFETs T10S 80V SG NCH MOSFET SO8FL HE WF | auf Bestellung 35 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS1D5N08XT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 253A; Idm: 1071A; 194W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Pulsed drain current: 1071A Power dissipation: 194W Gate charge: 83nC Drain current: 253A Kind of channel: enhancement Drain-source voltage: 80V Gate-source voltage: ±20V Kind of package: reel; tape Case: DFNW5 On-state resistance: 1.43mΩ | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS1D5N08XT1G | onsemi | Description: T10S 80V SG NCH MOSFET SO8FL HE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 253A (Tc) Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 330µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS1D5N08XT1G | ON Semiconductor | Trans MOSFET N-CH 80V 253A Automotive 5-Pin DFNW EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS1D7N04XMT1G | onsemi | Description: SINGLE N-CHANNEL POWER MOSFET 40 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 3.5V @ 70µA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 154A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) | auf Bestellung 4297 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS1D7N04XMT1G | onsemi | Description: SINGLE N-CHANNEL POWER MOSFET 40 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 3.5V @ 70µA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 154A (Tc) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS1D7N04XMT1G | onsemi | MOSFETs 40V T10M IN SO8FL PACKAGE | auf Bestellung 7648 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS1D9N08XT1G | onsemi | MOSFETs T10 80V STD NCH MOSFET SO8FL PREMIER WF | auf Bestellung 1965 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS1D9N08XT1G | onsemi | Description: T10 80V STD NCH MOSFET SO8FL PRE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 201A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 164W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 252µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V Qualification: AEC-Q101 | auf Bestellung 13983 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS1D9N08XT1G | onsemi | Description: T10 80V STD NCH MOSFET SO8FL PRE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 201A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 164W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 252µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V Qualification: AEC-Q101 | auf Bestellung 13500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS1D9N08XT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 201A; Idm: 866A; 164W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Pulsed drain current: 866A Power dissipation: 164W Gate charge: 63nC Drain current: 201A Kind of channel: enhancement Drain-source voltage: 80V Gate-source voltage: ±20V Kind of package: reel; tape Case: DFNW5 On-state resistance: 1.9mΩ | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS2D1N08XT1G | onsemi | Description: T10 80V STD NCH MOSFET SO8FL PRE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 181A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 43A, 10V Power Dissipation (Max): 148W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 213µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS2D1N08XT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 181A; Idm: 761A; 148W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Pulsed drain current: 761A Power dissipation: 148W Gate charge: 53nC Drain current: 181A Kind of channel: enhancement Drain-source voltage: 80V Gate-source voltage: ±20V Kind of package: reel; tape Case: DFNW5 On-state resistance: 2.1mΩ | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS2D1N08XT1G | onsemi | Description: T10 80V STD NCH MOSFET SO8FL PRE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 181A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 43A, 10V Power Dissipation (Max): 148W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 213µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS2D1N08XT1G | onsemi | MOSFETs T10 80V STD NCH MOSFET SO8FL PREMIER WF | auf Bestellung 1765 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS2D3N04XM | ONSEMI | Description: ONSEMI - NVMFWS2D3N04XM - Leistungs-MOSFET, PPAP-fähig, n-Kanal, 40 V, 121 A, 2350 µohm, WDFN, Oberflächenmontage tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 121A hazardous: false rohsPhthalatesCompliant: YES isCanonical: N Gate-Source-Schwellenspannung, max.: 3.5V Verlustleistung: 63W Anzahl der Pins: 5Pin(s) productTraceability: Yes-Date/Lot Code usEccn: EAR99 Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 2350µohm | auf Bestellung 1591 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFWS2D3N04XM | ONSEMI | Description: ONSEMI - NVMFWS2D3N04XM - Leistungs-MOSFET, PPAP-fähig, n-Kanal, 40 V, 121 A, 2350 µohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 121A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Gate-Source-Schwellenspannung, max.: 3.5V Verlustleistung: 63W SVHC: No SVHC (27-Jun-2024) Bauform - Transistor: WDFN Anzahl der Pins: 5Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 2350µohm | auf Bestellung 1591 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFWS2D3N04XMT1G | onsemi | Description: 40V T10M IN S08FL PACKAGE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 40500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS2D3N04XMT1G | onsemi | MOSFETs 40V T10M IN S08FL PACKAGE | auf Bestellung 3314 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS2D3N04XMT1G | onsemi | Description: 40V T10M IN S08FL PACKAGE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 40954 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS2D3P04M8LT1G | onsemi | Description: MV8 P INITIAL PROGRAM Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 3.8W (Ta), 205W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 2.7mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 80 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS2D3P04M8LT1G | ONSEMI | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -222A; Idm: -900A; 103W; DFNW5 Case: DFNW5 Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -900A Drain current: -222A Drain-source voltage: -40V Gate-source voltage: ±20V Gate charge: 157nC On-state resistance: 2.2mΩ Power dissipation: 103W Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS2D3P04M8LT1G | onsemi | MOSFETs MV8 P INITIAL PROGRAM | auf Bestellung 832 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS2D3P04M8LT1G | ON Semiconductor | Trans MOSFET P-CH 40V 31A 5-Pin SO-FL EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS2D3P04M8LT1G | onsemi | Description: MV8 P INITIAL PROGRAM Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.4V @ 2.7mA Power Dissipation (Max): 3.8W (Ta), 205W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS2D5N08XT1G | onsemi | Description: T10 80V STD NCH MOSFET SO8FL PRE Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 3.6V @ 184µA Power Dissipation (Max): 133W (Tc) Rds On (Max) @ Id, Vgs: 2.55mOhm @ 37A, 10V Current - Continuous Drain (Id) @ 25°C: 156A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS2D5N08XT1G | onsemi | Description: T10 80V STD NCH MOSFET SO8FL PRE Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 3.6V @ 184µA Power Dissipation (Max): 133W (Tc) Rds On (Max) @ Id, Vgs: 2.55mOhm @ 37A, 10V Current - Continuous Drain (Id) @ 25°C: 156A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS2D5N08XT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 156A; Idm: 640A; 133W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Pulsed drain current: 640A Power dissipation: 133W Gate charge: 45nC Drain current: 156A Kind of channel: enhancement Drain-source voltage: 80V Gate-source voltage: ±20V Kind of package: reel; tape Case: DFNW5 On-state resistance: 2.55mΩ | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS2D5N08XT1G | onsemi | MOSFETs T10 80V STD NCH MOSFET SO8FL PREMIER WF | auf Bestellung 22063 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS2D9N04XMT1G | onsemi | MOSFETs 40V T10M IN S08FL PACKAGE | auf Bestellung 9571 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS2D9N04XMT1G | onsemi | Description: SINGLE N-CHANNEL POWER MOSFET 40 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS2D9N04XMT1G | onsemi | Description: SINGLE N-CHANNEL POWER MOSFET 40 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS3D0N08XT1G | onsemi | Description: T10 80V STD NCH MOSFET SO8FL PRE | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS3D0N08XT1G | onsemi | Description: T10 80V STD NCH MOSFET SO8FL PRE | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS3D0N08XT1G | onsemi | MOSFETs Single N-Channel Power MOSFET 80V, 135 A, 3 mohm | auf Bestellung 1502 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS3D0P04M8LT1G | On Semiconductor | P-Channel 40 V 28A DFN-5 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS3D0P04M8LT1G | onsemi | Description: MV8 P INITIAL PROGRAM Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.4V @ 2mA Power Dissipation (Max): 3.9W (Ta), 171W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS3D0P04M8LT1G | onsemi | MOSFETs Power MOSFET, Single P-Channel, -40 V, 2.7 mohm, -183 A Wettable Option | auf Bestellung 681 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS3D0P04M8LT1G | ON Semiconductor | Trans MOSFET P-CH 40V 28A Automotive AEC-Q101 5-Pin SO-FL EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS3D0P04M8LT1G | onsemi | Description: MV8 P INITIAL PROGRAM Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.4V @ 2mA Power Dissipation (Max): 3.9W (Ta), 171W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 645 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS3D5N08XT1G | onsemi | Description: T10 80V STD NCH MOSFET SO8FL PRE | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS3D5N08XT1G | onsemi | MOSFETs Single N-Channel Power MOSFET 80V, 119 A, 3.5 mohm | auf Bestellung 1444 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS3D5N08XT1G | onsemi | Description: T10 80V STD NCH MOSFET SO8FL PRE | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS3D6N10MCLT1G | onsemi | Description: PTNG 100V LL NCH SO-8FL WETTABLE Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4411 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 3V @ 270µA Power Dissipation (Max): 3.2W (Ta), 139W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 48A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 132A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS3D6N10MCLT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 132A; Idm: 888A; 69W; DFNW5 Kind of package: reel; tape Case: DFNW5 On-state resistance: 3.6mΩ Mounting: SMD Pulsed drain current: 888A Power dissipation: 69W Gate charge: 60nC Polarisation: unipolar Drain current: 132A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS3D6N10MCLT1G | onsemi | Description: PTNG 100V LL NCH SO-8FL WETTABLE Input Capacitance (Ciss) (Max) @ Vds: 4411 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 3V @ 270µA Power Dissipation (Max): 3.2W (Ta), 139W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 48A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 132A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS3D6N10MCLT1G | onsemi | MOSFETs PTNG 100V LL NCH SO-8FL WETTABLE FLANK FOR AUTOMOTIVE MARKET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS4D0N04XMT1G | ONSEMI | Description: ONSEMI - NVMFWS4D0N04XMT1G - Leistungs-MOSFET, n-Kanal, 40 V, 80 A, 3900 µohm, WFDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 80A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 43W Bauform - Transistor: WFDFN Anzahl der Pins: 5Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 3900µohm SVHC: Lead (25-Jun-2025) | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFWS4D0N04XMT1G | onsemi | MOSFETs 40V T10M IN SO8FL PACKAGE | auf Bestellung 2758 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS4D0N04XMT1G | onsemi | Description: SINGLE N-CHANNEL POWER MOSFET 40 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 6A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 4346 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS4D0N04XMT1G | onsemi | Description: SINGLE N-CHANNEL POWER MOSFET 40 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 6A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS4D5N08XT1G | onsemi | Description: T10 80V STD NCH MOSFET SO8FL PRE | auf Bestellung 351 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS4D5N08XT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS4D5N08XT1G | onsemi | MOSFETs Single N-Channel Power MOSFET 80V, 92 A, 4.5 mohm | auf Bestellung 1322 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS4D5N08XT1G | onsemi | Description: T10 80V STD NCH MOSFET SO8FL PRE | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS6D2N08XT1G | onsemi | Description: T10 80V STD NCH MOSFET SO8FL PRE | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFWS6D2N08XT1G | onsemi | MOSFETs Single N-Channel Power MOSFET 80V, 71 A, 6.2 mohm | auf Bestellung 1164 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS6D2N08XT1G | onsemi | Description: T10 80V STD NCH MOSFET SO8FL PRE | auf Bestellung 842 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS9D6P04M8LT1G | onsemi | MOSFETs MV8 P-CH 40V SO-8FL PORTFOLIO EXPANSION | auf Bestellung 1226 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS9D6P04M8LT1G | onsemi | Description: MV8 P-CH 40V SO-8FL PORTFOLIO EX Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2002 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 14.47 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 2.4V @ 580µA Power Dissipation (Max): 3.7W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 77A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS9D6P04M8LT1G | onsemi | Description: MV8 P-CH 40V SO-8FL PORTFOLIO EX Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 3.7W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 580µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14.47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2002 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 3790 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMJD010N10MCLTWG | onsemi | Description: MOSFET 2N-CH 100V 11.8A 8LFPAK Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 84W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 97µA Supplier Device Package: 8-LFPAK Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMJD010N10MCLTWG | onsemi | Description: MOSFET 2N-CH 100V 11.8A 8LFPAK Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 84W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 97µA Supplier Device Package: 8-LFPAK Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMJD010N10MCLTWG | onsemi | MOSFETs PTNG 100V N-CH LL IN LFPAK56 DUALS PACKAGE | auf Bestellung 2592 Stücke: Lieferzeit 375-379 Tag (e) |
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| NVMJD012N04CLTWG | onsemi | MOSFETs T6 40V N-CH LL IN LFPAK56 DUALS PACKAGE | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMJD012N04CLTWG | onsemi | Description: MOSFET N-CH 40V LFPACK56 Packaging: Cut Tape (CT) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMJD012N04CLTWG | onsemi | Description: MOSFET N-CH 40V LFPACK56 Part Status: Active Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMJD012N06CLTWG | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 153A; 21W; LFPAK8 Case: LFPAK8 Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 11.5nC On-state resistance: 11.9mΩ Power dissipation: 21W Drain current: 42A Drain-source voltage: 60V Pulsed drain current: 153A Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMJD012N06CLTWG | onsemi | Description: MOSFET 2N-CH 60V 11.5A 8LFPAK Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 3.2W (Ta), 42W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMJD012N06CLTWG | onsemi | MOSFETs T6 60V N-CH LL IN LFPAK56 DUALS PACKAGE | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMJD012N06CLTWG | onsemi | Description: MOSFET 2N-CH 60V 11.5A 8LFPAK Part Status: Active Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 3.2W (Ta), 42W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMJD015N04CLTWG | onsemi | Description: MOSFET N-CH 40V LFPAK56 Packaging: Tape & Reel (TR) Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMJD015N04CLTWG | onsemi | MOSFETs T6 40V N-CH LL IN LFPAK56 DUALS PACKAGE | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMJD015N04CLTWG | onsemi | Description: MOSFET N-CH 40V LFPAK56 Packaging: Cut Tape (CT) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMJD015N06CLTWG | onsemi | MOSFETs T6 60V N-CH LL IN LFPAK56 DUALS PACKAGE | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMJD015N06CLTWG | onsemi | Description: MOSFET 2N-CH 60V 10.1A 8LFPAK Part Status: Active Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 2.2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Rds On (Max) @ Id, Vgs: 14.4mOhm @ 17A, 10V Input Capacitance (Ciss) (Max) @ Vds: 643pF @ 30V Current - Continuous Drain (Id) @ 25°C: 10.1A (Ta), 35A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 3.1W (Ta), 37W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMJD015N06CLTWG | onsemi | Description: MOSFET 2N-CH 60V 10.1A 8LFPAK Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 2.2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Rds On (Max) @ Id, Vgs: 14.4mOhm @ 17A, 10V Input Capacitance (Ciss) (Max) @ Vds: 643pF @ 30V Current - Continuous Drain (Id) @ 25°C: 10.1A (Ta), 35A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 3.1W (Ta), 37W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Cut Tape (CT) | auf Bestellung 20130 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMJD016N06CTWG | onsemi | Description: MOSFET N-CH 60V LFPAK56 Part Status: Active Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMJD016N06CTWG | onsemi | MOSFET T6 60V N-CH SG IN LFPAK56 DUALS PACKAGE | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMJD020N08HLTWG | onsemi | Description: T8 80V N-CH LL IN LFPAK56 DUALS Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 42W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 611pF @ 40V Rds On (Max) @ Id, Vgs: 19.5mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.4nC @ 10V Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: 8-LFPAK Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |