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NVMJD015N06CLTWGonsemiDescription: MOSFET 2N-CH 60V 10.1A 8LFPAK
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 643pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 10.1A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.1W (Ta), 37W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NVMJD015N06CLTWGonsemiDescription: MOSFET 2N-CH 60V 10.1A 8LFPAK
Part Status: Active
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 643pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 10.1A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.1W (Ta), 37W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NVMJD016N06CTWGonsemiMOSFET T6 60V N-CH SG IN LFPAK56 DUALS PACKAGE
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 Mindestbestellmenge: 3000 Stücke
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NVMJD016N06CTWGonsemiDescription: MOSFET N-CH 60V LFPAK56
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.06 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMJD020N08HLTWGonsemiMOSFETs T8 80V N-CH LL IN LFPAK56 DUALS PACKAGE
auf Bestellung 3000 Stücke:
Lieferzeit 360-364 Tag (e)
1+6.03 EUR
10+3.92 EUR
100+2.73 EUR
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NVMJD020N08HLTWGonsemiDescription: T8 80V N-CH LL IN LFPAK56 DUALS
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 42W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 611pF @ 40V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.4nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMJD020N08HLTWGonsemiDescription: T8 80V N-CH LL IN LFPAK56 DUALS
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 42W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 611pF @ 40V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.4nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
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NVMJD020N08HTWGonsemiMOSFETs T8 80V N-CH LFPAK56 DUALS PACKAGE
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NVMJD025N04CTWGonsemiMOSFETs T6 40V N-CH SG IN LFPAK56 DUALS PACKAGE
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NVMJD027N06CLTWGonsemiDescription: MOSFET 2N-CH 60V 7.7A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.2W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 30V
Rds On (Max) @ Id, Vgs: 27mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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NVMJD027N06CLTWGonsemiDescription: MOSFET 2N-CH 60V 7.7A 8LFPAK
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Rds On (Max) @ Id, Vgs: 27mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 21A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.2W (Ta), 24W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2.2V @ 13µA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.08 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMJD027N06CLTWGonsemiMOSFETs T6 60V N-CH LL IN LFPAK56 DUALS PACKAGE
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NVMJD027N10MCLTWGonsemiDescription: MOSFET 2N-CH 100V 7.4A 8LFPAK
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 3V @ 38µA
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 3.1W (Ta), 46W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NVMJD027N10MCLTWGonsemiMOSFETs PTNG 100V N-CH LL IN LFPAK56 DUALS PACKAGE
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NVMJD027N10MCLTWGonsemiDescription: MOSFET 2N-CH 100V 7.4A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NVMJD036N10MCLTWGonsemiDescription: MOSFET - POWER, DUAL, N-CHANNEL,
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 3V @ 26µA
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 3.2W (Ta), 36W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Bulk
Produkt ist nicht verfügbar
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NVMJD2D7N04CLTWGonsemiMOSFETs T6 40V N-CH LL IN LFPAK56 DUALS PACKAGE
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NVMJD3D0N04CTWGonsemiDescription: MOSFET N-CH 40V LFPACK57
Packaging: Cut Tape (CT)
auf Bestellung 5314 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.5 EUR
10+4.81 EUR
25+4.11 EUR
100+3.31 EUR
250+2.92 EUR
500+2.68 EUR
1000+2.48 EUR
Mindestbestellmenge: 3 Stücke
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NVMJD3D0N04CTWGonsemiDescription: MOSFET N-CH 40V LFPACK57
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.38 EUR
Mindestbestellmenge: 3000 Stücke
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NVMJD3D0N04CTWGonsemiMOSFETs T6 40V N-CH SG IN LFPAK56 DUALS PACKAGE
Produkt ist nicht verfügbar
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NVMJD4D7N04CLTWGonsemiDescription: MOSFET N-CH 40V LFPAK56
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.94 EUR
10+3.12 EUR
25+2.67 EUR
100+2.15 EUR
250+1.92 EUR
500+1.77 EUR
1000+1.65 EUR
Mindestbestellmenge: 5 Stücke
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NVMJD4D7N04CLTWGonsemiMOSFETs T6 40V N-CH LL IN LFPAK56 DUALS PACKAGE
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NVMJD4D7N04CLTWGonsemiDescription: MOSFET N-CH 40V LFPAK56
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.44 EUR
Mindestbestellmenge: 3000 Stücke
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NVMJD5D4N04CTWGonsemiMOSFETs T6 40V N-CH SG IN LFPAK56 DUALS PACKAGE
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NVMJD7D4N04CLTWGonsemiDescription: MOSFET N-CH 40V LFPAK56
Packaging: Cut Tape (CT)
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NVMJD7D4N04CLTWGonsemiDescription: MOSFET N-CH 40V LFPAK56
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NVMJS0D9N04CLTWGonsemiDescription: MOSFET N-CH 40V 50A/330A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 190µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NVMJS0D9N04CLTWGONN
auf Bestellung 2920 Stücke:
Lieferzeit 21-28 Tag (e)
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NVMJS0D9N04CLTWGONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMJS0D9N04CLTWGonsemiDescription: MOSFET N-CH 40V 50A/330A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 190µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
auf Bestellung 2987 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.53 EUR
10+3.78 EUR
100+2.74 EUR
500+2.28 EUR
1000+2.23 EUR
Mindestbestellmenge: 4 Stücke
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NVMJS1D0N04CTWGonsemiDescription: MOSFET N-CH 40V 46A/300A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 190µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NVMJS1D0N04CTWGON Semiconductor
auf Bestellung 2990 Stücke:
Lieferzeit 21-28 Tag (e)
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NVMJS1D0N04CTWGonsemiDescription: MOSFET N-CH 40V 46A/300A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 190µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.78 EUR
10+4.43 EUR
100+3.09 EUR
500+2.52 EUR
1000+2.33 EUR
Mindestbestellmenge: 4 Stücke
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NVMJS1D2N04CLTWGonsemiDescription: MOSFET N-CH 40V 41A/237A 8LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 170µA
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
auf Bestellung 32990 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.19 EUR
10+3.36 EUR
100+2.31 EUR
500+1.9 EUR
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NVMJS1D2N04CLTWGonsemiDescription: MOSFET N-CH 40V 41A/237A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 170µA
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.56 EUR
Mindestbestellmenge: 3000 Stücke
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NVMJS1D3N04CTWGonsemiDescription: MOSFET N-CH 40V 41A/235A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5960 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.19 EUR
10+3.36 EUR
100+2.32 EUR
500+1.9 EUR
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NVMJS1D3N04CTWGONSEMIDescription: ONSEMI - NVMJS1D3N04CTWG - Leistungs-MOSFET, n-Kanal, 40 V, 235 A, 0.0011 ohm, LFPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 235A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 128W
Gate-Source-Schwellenspannung, max.: 3.5V
euEccn: NLR
Verlustleistung: 128W
Bauform - Transistor: LFPAK
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0011ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0011ohm
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 1 Stücke:
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NVMJS1D3N04CTWGON SemiconductorMOSFET TRENCH 6 40V SL NFET
auf Bestellung 3000 Stücke:
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NVMJS1D3N04CTWGonsemiDescription: MOSFET N-CH 40V 41A/235A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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NVMJS1D3N04CTWGONSEMIDescription: ONSEMI - NVMJS1D3N04CTWG - Leistungs-MOSFET, n-Kanal, 40 V, 235 A, 0.0011 ohm, LFPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 235A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.5V
euEccn: NLR
Verlustleistung: 128W
Bauform - Transistor: LFPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0011ohm
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 1 Stücke:
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NVMJS1D4N06CLTWGonsemiMOSFET T6 60V LL LFPAK
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NVMJS1D4N06CLTWGONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMJS1D4N06CLTWGonsemiDescription: MOSFET N-CH 60V 39A/262A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 262A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 280µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2700 Stücke:
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NVMJS1D4N06CLTWGonsemiDescription: MOSFET N-CH 60V 39A/262A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 262A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 280µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NVMJS1D5N04CLTWGonsemiDescription: MOSFET N-CH 40V 38A/200A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.27 EUR
6000+1.26 EUR
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NVMJS1D5N04CLTWGONSEMIDescription: ONSEMI - NVMJS1D5N04CLTWG - Leistungs-MOSFET, n-Kanal, 40 V, 200 A, 0.0014 ohm, LFPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 200A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 110W
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 110W
Bauform - Transistor: LFPAK
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0012ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0014ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 2955 Stücke:
Lieferzeit 14-21 Tag (e)
100+3.18 EUR
108+2 EUR
500+1.46 EUR
1000+1.36 EUR
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NVMJS1D5N04CLTWGonsemiMOSFETs 40V 1.55 mOhm 185A Single N-Channel
auf Bestellung 2965 Stücke:
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10+2.53 EUR
100+1.83 EUR
500+1.56 EUR
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NVMJS1D5N04CLTWGONSEMIDescription: ONSEMI - NVMJS1D5N04CLTWG - Leistungs-MOSFET, n-Kanal, 40 V, 200 A, 0.0014 ohm, LFPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 200A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 110W
Bauform - Transistor: LFPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0014ohm
SVHC: No SVHC (25-Jun-2025)
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Lieferzeit 14-21 Tag (e)
52+4.84 EUR
73+3.18 EUR
108+2 EUR
500+1.46 EUR
1000+1.36 EUR
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NVMJS1D5N04CLTWGONN
auf Bestellung 2990 Stücke:
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NVMJS1D5N04CLTWGonsemiDescription: MOSFET N-CH 40V 38A/200A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.44 EUR
10+2.86 EUR
100+1.95 EUR
500+1.56 EUR
1000+1.54 EUR
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NVMJS1D5N04CLTWGON SemiconductorMOSFET 40V 1.55 mOhm 185A Single N-Channel
auf Bestellung 3000 Stücke:
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NVMJS1D6N06CLTWGonsemiDescription: MOSFET N-CH 60V 38A/250A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
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3000+2.07 EUR
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NVMJS1D6N06CLTWGonsemiDescription: MOSFET N-CH 60V 38A/250A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 9361 Stücke:
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NVMJS1D6N06CLTWGonsemiMOSFETs T6 60V LL LFPAK
Produkt ist nicht verfügbar
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NVMJS1D7N04CTWGonsemiDescription: MOSFET N-CH 40V 35A/185A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NVMJS1D7N04CTWGonsemiMOSFETs TRENCH 6 40V SL NFET
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NVMJS1D7N04CTWGonsemiDescription: MOSFET N-CH 40V 35A/185A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
auf Bestellung 2913 Stücke:
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10+2.86 EUR
100+1.95 EUR
500+1.56 EUR
1000+1.54 EUR
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NVMJS2D5N06CLTWGON SemiconductorMOSFET 60V 2.4 mOhm 155A Single N-Channel
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NVMJS2D5N06CLTWGonsemiDescription: MOSFET N-CH 60V 31A/164A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2V @ 135µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2787 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.71 EUR
10+3.03 EUR
100+2.08 EUR
500+1.67 EUR
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NVMJS2D5N06CLTWGONSEMIDescription: ONSEMI - NVMJS2D5N06CLTWG - Leistungs-MOSFET, n-Kanal, 60 V, 164 A, 0.002 ohm, LFPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 164A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 113W
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 113W
Bauform - Transistor: LFPAK
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.002ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.002ohm
SVHC: Lead (14-Jun-2023)
auf Bestellung 2575 Stücke:
Lieferzeit 14-21 Tag (e)
100+2.68 EUR
500+2.19 EUR
1000+2.11 EUR
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NVMJS2D5N06CLTWGonsemiDescription: MOSFET N-CH 60V 31A/164A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 135µA
Power Dissipation (Max): 3.9W (Ta), 113W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 164A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NVMJS2D5N06CLTWGONSEMIDescription: ONSEMI - NVMJS2D5N06CLTWG - Leistungs-MOSFET, n-Kanal, 60 V, 164 A, 0.002 ohm, LFPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 164A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 113W
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 113W
Bauform - Transistor: LFPAK
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.002ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.002ohm
SVHC: Lead (14-Jun-2023)
auf Bestellung 2575 Stücke:
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52+4.9 EUR
64+3.64 EUR
71+3.02 EUR
100+2.68 EUR
500+2.19 EUR
1000+2.11 EUR
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NVMJS2D5N06CLTWGonsemiMOSFETs 60V 2.4 mOhm 155A Single N-Channel
auf Bestellung 5940 Stücke:
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1+4.33 EUR
10+2.7 EUR
100+1.98 EUR
500+1.63 EUR
1000+1.52 EUR
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NVMJS3D0N06CTWGonsemiMOSFETs T6 60V SL LFPAK8 5X6
auf Bestellung 2692 Stücke:
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2+2.93 EUR
10+1.96 EUR
100+1.64 EUR
500+1.57 EUR
1000+1.52 EUR
3000+1.5 EUR
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NVMJST004N08XTXGonsemi T10 80V SG TCPAK 5X7
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NVMJST006N08XTXGonsemiMOSFETs T10 80V SG TCPAK 5x7
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NVMJST0D9N04CTXGonsemiMOSFETs TRENCH 6 40V LFPAK 5X7
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NVMJST0D9N04CTXGonsemiDescription: TRENCH 6 40V LFPAK 5X7
Packaging: Cut Tape (CT)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 531A (Tc)
Rds On (Max) @ Id, Vgs: 1.07mOhm @ 50A, 10V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 190µA
Supplier Device Package: 10-TCPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2992 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.53 EUR
10+4.91 EUR
25+4.51 EUR
100+4.07 EUR
250+3.86 EUR
500+3.81 EUR
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NVMJST0D9N04CTXGonsemiDescription: TRENCH 6 40V LFPAK 5X7
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 10-TCPAK
Vgs(th) (Max) @ Id: 3.5V @ 190µA
Power Dissipation (Max): 555W (Tc)
Rds On (Max) @ Id, Vgs: 1.07mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 531A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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NVMJST1D2N04CTXGonsemiDescription: TRENCH 6 40V LFPAK 5X7
Packaging: Cut Tape (CT)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 451A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 50A, 10V
Power Dissipation (Max): 454W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 10-TCPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5461 Stücke:
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10+5.06 EUR
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100+4.19 EUR
250+3.97 EUR
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NVMJST1D2N04CTXGonsemiMOSFETs TRENCH 6 40V LFPAK 5X7
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NVMJST1D2N04CTXGonsemiDescription: TRENCH 6 40V LFPAK 5X7
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 451A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 50A, 10V
Power Dissipation (Max): 454W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 10-TCPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+3.5 EUR
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NVMJST1D3N04CTXGonsemiDescription: TRENCH 6 40V LFPAK 5X7
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 10-TCPAK
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.39mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 386A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 15000 Stücke:
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3000+2.37 EUR
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NVMJST1D3N04CTXGonsemiMOSFETs TRENCH 6 40V LFPAK 5X7
auf Bestellung 2415 Stücke:
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10+3.33 EUR
100+2.83 EUR
500+2.73 EUR
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NVMJST1D3N04CTXGonsemiDescription: TRENCH 6 40V LFPAK 5X7
Packaging: Cut Tape (CT)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 386A (Tc)
Rds On (Max) @ Id, Vgs: 1.39mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: 10-TCPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 17955 Stücke:
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10+4.69 EUR
25+4.01 EUR
100+3.25 EUR
250+2.87 EUR
500+2.64 EUR
1000+2.44 EUR
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NVMJST1D4N06CLTXGonsemiDescription: TRENCH 6 60V LFPAK 5X7
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 10V
Power Dissipation (Max): 5.3W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 10-TCPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMJST1D4N06CLTXGONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 1.49mΩ
Mounting: SMD
Gate charge: 92.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMJST1D4N06CLTXGonsemiMOSFETs TRENCH 6 60V LFPAK 5X7
auf Bestellung 6452 Stücke:
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10+5.09 EUR
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NVMJST1D4N06CLTXGonsemiDescription: TRENCH 6 60V LFPAK 5X7
Packaging: Cut Tape (CT)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 10V
Power Dissipation (Max): 5.3W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 10-TCPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2433 Stücke:
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100+3.63 EUR
500+3.05 EUR
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NVMJST1D6N04CTXGonsemiDescription: TRENCH 6 40V LFPAK 5X7
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 10-TCPAK
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 314A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5740 Stücke:
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10+4.16 EUR
25+3.55 EUR
100+2.86 EUR
250+2.51 EUR
500+2.31 EUR
1000+2.13 EUR
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NVMJST1D6N04CTXGonsemiMOSFETs TRENCH 6 40V LFPAK 5X7
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NVMJST1D6N04CTXGonsemiDescription: TRENCH 6 40V LFPAK 5X7
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 10-TCPAK
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 314A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+2.02 EUR
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NVMJST2D1N08XTXGonsemiMOSFETs T10 80V SG TCPAK 5X7
auf Bestellung 3000 Stücke:
Lieferzeit 374-378 Tag (e)
1+6.85 EUR
10+4.44 EUR
100+3.12 EUR
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NVMJST2D1N08XTXGonsemiDescription: SINGLE N-CHANNEL POWERTRENCH T10
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 10-TCPAK
Power Dissipation (Max): 454W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1077 Stücke:
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NVMJST2D1N08XTXGonsemiDescription: SINGLE N-CHANNEL POWERTRENCH T10
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 10-TCPAK
Power Dissipation (Max): 454W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
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NVMJST2D6N08HTXGONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Kind of package: reel; tape
Mounting: SMD
Case: TCPAK10
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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NVMJST2D6N08HTXGonsemiDescription: TRENCH 8 80V LFPAK 5X7
Packaging: Cut Tape (CT)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 131.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 5.3W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 10-TCPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4405 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 142 Stücke:
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4+6.62 EUR
10+5 EUR
25+4.58 EUR
100+4.13 EUR
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NVMJST2D6N08HTXGonsemiMOSFETs TRENCH 8 80V LFPAK 5X7
auf Bestellung 4495 Stücke:
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1+6.5 EUR
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NVMJST2D6N08HTXGonsemiDescription: TRENCH 8 80V LFPAK 5X7
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 131.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 5.3W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 10-TCPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4405 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NVMJST2D8N08XTXGonsemiDescription: T10 80V SG TCPAK 5X7
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NVMJST2D8N08XTXGonsemiMOSFETs T10 80V SG TCPAK 5X7
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NVMJST2D8N08XTXGonsemiDescription: T10 80V SG TCPAK 5X7
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NVMJST3D3N04CTXGonsemiDescription: TRENCH 6 40V LFPAK 5X7
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 10-TCPAK
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 157A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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NVMJST3D3N04CTXGonsemiMOSFETs TRENCH 6 40V LFPAK 5X7
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NVMJST3D3N04CTXGonsemiDescription: TRENCH 6 40V LFPAK 5X7
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 10-TCPAK
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 157A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 42 Stücke:
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6+3.52 EUR
10+2.59 EUR
25+2.37 EUR
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NVMJST3D3N08XTXGonsemiDescription: T10 80V SG TCPAK 5X7
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NVMJST3D3N08XTXGonsemiMOSFETs T10 80V SG TCPAK 5X7
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NVMJST3D3N08XTXGonsemiDescription: T10 80V SG TCPAK 5X7
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NVMK48PanduitRacks & Rack Cabinet Accessories Net-Verse Front/Rear Door Mounting Kit,
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NVMK48Panduit CorpDescription: NET-VERSE FRONT/REAR DOOR MOUNTI
Packaging: Bulk
For Use With/Related Products: Cabinets
Accessory Type: Locking Kit
Produkt ist nicht verfügbar
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