Produkte > DMN
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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| DMN61D9UWQ-13 | DIODES INC. | Description: DIODES INC. - DMN61D9UWQ-13 - Leistungs-MOSFET, n-Kanal, 60 V, 340 mA, 1.2 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 340mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 320mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.2ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 5250 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN61D9UWQ-13 | Diodes Zetex | Trans MOSFET N-CH 60V 0.34A Automotive AEC-Q101 3-Pin SOT-323 T/R | auf Bestellung 14030000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN61D9UWQ-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 400MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Power Dissipation (Max): 440mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN61D9UWQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V | auf Bestellung 3723 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN61D9UWQ-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 400MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Power Dissipation (Max): 440mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 114000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN61D9UWQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.34A Automotive AEC-Q101 3-Pin SOT-323 T/R | auf Bestellung 108000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN61D9UWQ-7 | DIODES INC. | Description: DIODES INC. - DMN61D9UWQ-7 - Leistungs-MOSFET, n-Kanal, 60 V, 340 mA, 1.2 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 340mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 320mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.2ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 955 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN61D9UWQ-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 400MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Power Dissipation (Max): 440mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 115783 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN61D9UWQ-7 | DIODES INC. | Description: DIODES INC. - DMN61D9UWQ-7 - Leistungs-MOSFET, n-Kanal, 60 V, 340 mA, 1.2 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 340mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 320mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.2ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 955 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0LFB-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.32A 3-Pin DFN T/R | auf Bestellung 3080 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0LFB-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.32A 3-Pin DFN T/R | auf Bestellung 351000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0LFB-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 100MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V | auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0LFB-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.32A 3-Pin DFN T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0LFB-7 | DIODES INC. | Description: DIODES INC. - DMN62D0LFB-7 - Leistungs-MOSFET, n-Kanal, 60 V, 320 mA, 1.3 ohm, X1-DFN1006, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 320mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: X1-DFN1006 Anzahl der Pins: 3Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.3ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2550 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0LFB-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.32A 3-Pin DFN T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0LFB-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60 X2-DFN1006-3 T&R 3K | auf Bestellung 31099 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0LFB-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.32A 3-Pin DFN T/R | auf Bestellung 3080 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0LFB-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 100MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V | auf Bestellung 24700 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0LFB-7 | DIODES INC. | Description: DIODES INC. - DMN62D0LFB-7 - Leistungs-MOSFET, n-Kanal, 60 V, 320 mA, 1.3 ohm, X1-DFN1006, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 320mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: X1-DFN1006 Anzahl der Pins: 3Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.3ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2550 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0LFB-7B | Diodes Incorporated | Description: MOSFET N-CH 60V 100MA 3-DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V | auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0LFB-7B | Diodes Incorporated | MOSFETs 2N7002 Family X1-DFN1006-3 T&R 10K | auf Bestellung 9359 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0LFB-7B | Diodes Incorporated | Description: MOSFET N-CH 60V 100MA 3-DFN Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V | auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0LFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.32A 3-Pin DFN T/R | auf Bestellung 70000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0LFD-13 | Diodes Zetex | Trans MOSFET N-CH 60V 0.31A 3-Pin X1-DFN EP T/R | auf Bestellung 130000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0LFD-13 | Diodes Incorporated | Description: MOSFET N-CH X1-DFN1212-3 Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Part Status: Obsolete Supplier Device Package: X1-DFN1212-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 480mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V | auf Bestellung 129000 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0LFD-13 | Diodes Incorporated | MOSFETs 2N7002 Family X1-DFN1212-3 T&R 10K | auf Bestellung 9460 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0LFD-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 310MA 3DFN Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Part Status: Active Supplier Device Package: X1-DFN1212-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 480mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UDFN Packaging: Tape & Reel (TR) | auf Bestellung 54000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0LFD-7 | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss | auf Bestellung 19456 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0LFD-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 310MA 3DFN Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Part Status: Active Supplier Device Package: X1-DFN1212-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 480mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: 3-UDFN Packaging: Cut Tape (CT) Mounting Type: Surface Mount | auf Bestellung 54170 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0LFD-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.31A 3-Pin X1-DFN EP T/R | auf Bestellung 183000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0SFD-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS | auf Bestellung 5091 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0SFD-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 540MA 3DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: X1-DFN1212-3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 430mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) | auf Bestellung 203071 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0SFD-7 | DIODES INC. | Description: DIODES INC. - DMN62D0SFD-7 - Leistungs-MOSFET, n-Kanal, 60 V, 540 mA, 2 ohm, X1-DFN1212, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 540mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 430mW Bauform - Transistor: X1-DFN1212 Anzahl der Pins: 3Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0SFD-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 540MA 3DFN Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: X1-DFN1212-3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 430mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UDFN Packaging: Tape & Reel (TR) Technology: MOSFET (Metal Oxide) | auf Bestellung 201000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0SFD-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.54A 3-Pin DFN T/R | auf Bestellung 207000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0SFD-7 | DIODES INC. | Description: DIODES INC. - DMN62D0SFD-7 - Leistungs-MOSFET, n-Kanal, 60 V, 540 mA, 2 ohm, X1-DFN1212, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 540mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 430mW Bauform - Transistor: X1-DFN1212 Anzahl der Pins: 3Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0U | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0U-13 | Diodes Zetex | Trans MOSFET N-CH 60V 0.38A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0U-13 | Diodes Incorporated | MOSFETs N-Ch Enh Mode FET 60V 20Vgss 1.2A | auf Bestellung 105694 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0U-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 380MA SOT23 Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 380mW (Ta) | auf Bestellung 96419 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0U-13 | DIODES INC. | Description: DIODES INC. - DMN62D0U-13 - Leistungs-MOSFET, n-Kanal, 60 V, 380 mA, 1.2 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 380mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 380mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.2ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 53035 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0U-13 | Diodes Zetex | Trans MOSFET N-CH 60V 0.38A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0U-13 | Diodes Zetex | Trans MOSFET N-CH 60V 0.38A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0U-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 380MA SOT23 Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 380mW (Ta) | auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0U-13 | Diodes Zetex | Trans MOSFET N-CH 60V 0.38A 3-Pin SOT-23 T/R | auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0U-13 | DIODES INC. | Description: DIODES INC. - DMN62D0U-13 - Leistungs-MOSFET, n-Kanal, 60 V, 380 mA, 1.2 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 380mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 380mW Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 380mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 1.2ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.2ohm | auf Bestellung 61340 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0U-13 | Diodes Zetex | Trans MOSFET N-CH 60V 0.38A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0U-7 | DIODES INC. | Description: DIODES INC. - DMN62D0U-7 - Leistungs-MOSFET, n-Kanal, 60 V, 380 mA, 1.2 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 380mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 380mW Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 380mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 1.2ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.2ohm | auf Bestellung 26935 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0U-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.38A 3-Pin SOT-23 T/R | auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0U-7 | DIODES/ZETEX | N-MOSFET 0.38A 60V 0.38W 2Ω DMN62D0U-13 DMN62D0U-7 TDMN62d0u Anzahl je Verpackung: 100 Stücke | auf Bestellung 2580 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN62D0U-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 380MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Power Dissipation (Max): 380mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V | auf Bestellung 17706 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0U-7 | DIODES INC. | Description: DIODES INC. - DMN62D0U-7 - Leistungs-MOSFET, n-Kanal, 60 V, 380 mA, 1.2 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 380mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 380mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.2ohm | auf Bestellung 26935 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0U-7 | Diodes | N-CH 60V 0.38A SOT-23 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0U-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.38A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0U-7 Produktcode: 191676
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Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| DMN62D0U-7 | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A | auf Bestellung 201462 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0U-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 380MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Power Dissipation (Max): 380mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0U-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.38W; SOT23; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.38W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD | auf Bestellung 7820 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0UDW-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.35A SOT363 Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Current - Continuous Drain (Id) @ 25°C: 350mA Drain to Source Voltage (Vdss): 60V Power - Max: 320mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0UDW-13 | Diodes Zetex | Trans MOSFET N-CH 60V 0.35A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0UDW-13 | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A | auf Bestellung 5207 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UDW-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.35A SOT363 Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Current - Continuous Drain (Id) @ 25°C: 350mA Drain to Source Voltage (Vdss): 60V Power - Max: 320mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) | auf Bestellung 9405 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UDW-7 | Diodes Incorporated | MOSFETs N-Ch Enh Mode FET 60V 20Vgss 1.2A | auf Bestellung 125839 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UDW-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.35A 6-Pin SOT-363 T/R | auf Bestellung 2870 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0UDW-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.35A SOT363 Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Current - Continuous Drain (Id) @ 25°C: 350mA Drain to Source Voltage (Vdss): 60V Power - Max: 320mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UDW-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.35A 6-Pin SOT-363 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0UDW-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.35A 6-Pin SOT-363 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0UDW-7 | Diodes | MOSFET 2N-CH 60V 0.35A SOT-363 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0UDW-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.35A SOT363 Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Current - Continuous Drain (Id) @ 25°C: 350mA Drain to Source Voltage (Vdss): 60V Power - Max: 320mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Part Status: Active | auf Bestellung 3384 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UDW-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.35A 6-Pin SOT-363 T/R | auf Bestellung 2870 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0UDWQ-13 | Diodes Zetex | Dual N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0UDWQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.35A SOT363 Part Status: Active Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 320mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) | auf Bestellung 260000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UDWQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V SOT363 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0UDWQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.35A SOT363 Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 320mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive | auf Bestellung 268288 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UDWQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.35A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UDWQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V SOT363 T&R 3K | auf Bestellung 2354 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UDWQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.35A SOT363 Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 320mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive | auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UDWQ-7 | Diodes Zetex | Dual N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0UT-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 0.32A SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 4.5V Power Dissipation (Max): 230mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V | auf Bestellung 141878 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UT-13 | Diodes Zetex | Trans MOSFET N-CH 60V 0.32A 3-Pin SOT-523 T/R | auf Bestellung 130000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0UT-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 0.32A SOT523 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 4.5V Power Dissipation (Max): 230mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V | auf Bestellung 140000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UT-13 | Diodes Incorporated | MOSFETs N-Ch Enh Mode Fet 60V 20Vgss 0.47W | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0UT-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.32A 3-Pin SOT-523 T/R | auf Bestellung 366000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0UT-7 | Diodes Incorporated | MOSFETs N-Ch Enh Mode Fet 60V 20Vgss 0.47W | auf Bestellung 32739 Stücke: Lieferzeit 290-294 Tag (e) |
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| DMN62D0UT-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 0.32A SOT523 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-523 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 230mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) FET Type: N-Channel | auf Bestellung 2672898 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UT-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 0.32A SOT523 Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-523 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 230mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) | auf Bestellung 2670000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UV-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.49A SOT563 Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Current - Continuous Drain (Id) @ 25°C: 490mA (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 470mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0UV-13 | Diodes Zetex | MOSFET BVDSS: 41V60V SOT563 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0UV-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V SOT563 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0UV-7 | Diodes Zetex | MOSFET BVDSS: 41V60V SOT563 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0UV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.49A SOT563 Part Status: Active Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Current - Continuous Drain (Id) @ 25°C: 490mA (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 470mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) | auf Bestellung 12240 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UV-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V SOT563 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0UV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.49A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 470mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 490mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UW-13 | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A | auf Bestellung 12595 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UW-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 340MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V | auf Bestellung 130000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UW-13 | Diodes Zetex | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN62D0UW-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 340MA SOT323 Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) | auf Bestellung 130000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UW-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-323 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0UW-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 340MA SOT323 Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 320mW (Ta) | auf Bestellung 435000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UW-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |