Produkte > NDD
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||||
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| NDD | Neutrik | XLR Connectors DUMMYPLUG DIN - RUBBER | auf Bestellung 542 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD | NEUTRIK | NTR-NDD Other Neutrik Connectors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-15P0PY18K-A174 | ITT Cannon, LLC | Description: NANO MALE 15POS 18" YEL | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-15P0PY18S | ITT Cannon, LLC | Description: CABLE ASSY D-NANO-D 15P 457.2MM Packaging: Bulk Contact Finish: Gold Color: Yellow, Individual Length: 1.50' (457.20mm) Shielding: Unshielded Number of Positions: 15 Type: D-Type, Nano-D 1st Connector: Plug, Male Pins 2nd Connector: Individual Wire Leads Contact Finish Thickness: 50.0µin (1.27µm) | auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-15PBRT-T-A174 | ITT Cannon | D-Sub Micro-D Connectors | auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-15PBRTT | ITT Cannon, LLC | Description: CONN D-TYPE PLUG 15POS R/A SLDR Packaging: Bulk Connector Type: Plug, Male Pins Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 15 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Yellow Chromate Plated Cadmium Part Status: Active | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-15PBRTT-A174 | ITT Cannon, LLC | Description: CONN D-TYPE PLUG 15POS R/A SLDR | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-15S0PY18T | ITT Cannon, LLC | Description: CABLE ASSY D-NANO-D 15P 457.2MM Packaging: Bulk Contact Finish: Gold Color: Yellow, Individual Length: 1.50' (457.20mm) Shielding: Unshielded Number of Positions: 15 Type: D-Type, Nano-D 1st Connector: Receptacle, Female Sockets 2nd Connector: Individual Wire Leads Contact Finish Thickness: 50.0µin (1.27µm) | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-15S0PY18T-A174 | ITT Cannon, LLC | Description: NANO FMALE 15POS 18" YEL | auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-15SBRT-T-A174 | ITT Cannon | D-Sub Micro-D Connectors | auf Bestellung 53 Stücke: Lieferzeit 262-266 Tag (e) |
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| NDD-15SBRTT | ITT Cannon, LLC | Description: CONN D-TYPE RCPT 15POS R/A SLDR Packaging: Bulk Connector Type: Receptacle, Female Sockets Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 15 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Yellow Chromate Plated Cadmium Part Status: Active | auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-15SBRTT | ITT Cannon | D-Sub Micro-D Connectors Nano Micromini Board Mount Conn | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-15SBRTT-A174 | ITT Cannon, LLC | Description: CONN D-TYPE RCPT 15POS R/A SLDR Packaging: Bulk Connector Type: Receptacle, Female Sockets Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 15 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Nickel Plated, Electroless Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-21P0PY18K-A174 | ITT Cannon, LLC | Description: NANO MALE 21POS 18" YEL | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-21P0PY18S | ITT Cannon, LLC | Description: CABLE ASSY D-NANO-D 21P 457.2MM Packaging: Bulk Contact Finish: Gold Color: Yellow, Individual Length: 1.50' (457.20mm) Shielding: Unshielded Number of Positions: 21 Type: D-Type, Nano-D 1st Connector: Plug, Male Pins 2nd Connector: Individual Wire Leads Contact Finish Thickness: 50.0µin (1.27µm) | auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-21PBRT-T-A174 | ITT Cannon | D-Sub Micro-D Connectors | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-21PBRTT | ITT Cannon, LLC | Description: CONN D-TYPE PLUG 21POS R/A SLDR Packaging: Bulk Connector Type: Plug, Male Pins Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 21 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Yellow Chromate Plated Cadmium Part Status: Active | auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-21PBRTT-A174 | ITT Cannon, LLC | Description: CONN D-TYPE PLUG 21POS R/A SLDR Packaging: Bulk Connector Type: Plug, Male Pins Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 21 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Nickel Plated, Electroless Part Status: Active | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-21S0PY18T | ITT Cannon, LLC | Description: CABLE ASSY D-NANO-D 21P 457.2MM Packaging: Bulk Contact Finish: Gold Color: Yellow, Individual Length: 1.50' (457.20mm) Shielding: Unshielded Number of Positions: 21 Type: D-Type, Nano-D 1st Connector: Receptacle, Female Sockets 2nd Connector: Individual Wire Leads Contact Finish Thickness: 50.0µin (1.27µm) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-21S0PY18T-A174 | ITT Cannon | D-Sub Cables | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-21S0PY18T-A174 | ITT Cannon, LLC | Description: NANO FMALE 21POS 18" YEL | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-21SBRT-T-A174 | ITT Cannon | D-Sub Micro-D Connectors | auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-21SBRTT | ITT Cannon, LLC | Description: CONN D-TYPE RCPT 21POS R/A SLDR Packaging: Bulk Connector Type: Receptacle, Female Sockets Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 21 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Yellow Chromate Plated Cadmium | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-21SBRTT-A174 | ITT Cannon, LLC | Description: CONN D-TYPE RCPT 21POS R/A SLDR Packaging: Bulk Connector Type: Receptacle, Female Sockets Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 21 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Nickel Plated, Electroless Part Status: Active | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-25P0PY18K-A174 | ITT Cannon, LLC | Description: CABLE ASSY D-NANO-D 25P 457.2MM Packaging: Bag Contact Finish: Gold Color: Yellow, Individual Length: 1.50' (457.20mm) Shielding: Unshielded Number of Positions: 25 Type: D-Type, Nano-D 1st Connector: Plug, Male Pins 2nd Connector: Individual Wire Leads Contact Finish Thickness: 50.0µin (1.27µm) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-25P0PY18S | ITT Cannon, LLC | Description: CABLE ASSY D-NANO-D 25P 457.2MM Packaging: Bulk Contact Finish: Gold Color: Yellow, Individual Length: 1.50' (457.20mm) Shielding: Unshielded Number of Positions: 25 Type: D-Type, Nano-D 1st Connector: Plug, Male Pins 2nd Connector: Individual Wire Leads Contact Finish Thickness: 50.0µin (1.27µm) Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-25PBRT-T-A174 | ITT Cannon | D-Sub Micro-D Connectors | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-25PBRTT | ITT Cannon, LLC | Description: CONN D-TYPE PLUG 25POS R/A SLDR Packaging: Bulk Connector Type: Plug, Male Pins Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 25 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Yellow Chromate Plated Cadmium | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-25PBRTT-A174 | ITT Cannon, LLC | Description: CONN D-TYPE PLUG 25POS R/A SLDR Packaging: Bulk Connector Type: Plug, Male Pins Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 25 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Nickel Plated, Electroless Part Status: Active | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-25S0PY18T | ITT Cannon, LLC | Description: CABLE ASSY D-NANO-D 25P 457.2MM Packaging: Bulk Contact Finish: Gold Color: Yellow, Individual Length: 1.50' (457.20mm) Shielding: Unshielded Number of Positions: 25 Type: D-Type, Nano-D 1st Connector: Receptacle, Female Sockets 2nd Connector: Individual Wire Leads Contact Finish Thickness: 50.0µin (1.27µm) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-25S0PY18T-A174 | ITT Cannon, LLC | Description: NANO FMALE 25POS 18" YEL | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-25S0PY18T-A174 | ITT Cannon | D-Sub Cables | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-25SBRT-T-A174 | ITT Cannon | D-Sub Micro-D Connectors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-25SBRTT | ITT Cannon | D-Sub Micro-D Connectors Nano Micromini Board Mount Conn | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-25SBRTT | ITT Cannon, LLC | Description: CONN D-TYPE RCPT 25POS R/A SLDR Packaging: Bulk Connector Type: Receptacle, Female Sockets Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 25 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Yellow Chromate Plated Cadmium Part Status: Active | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-25SBRTT-A174 | ITT Cannon, LLC | Description: CONN D-TYPE RCPT 25POS R/A SLDR Packaging: Bulk Connector Type: Receptacle, Female Sockets Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 25 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Nickel Plated, Electroless Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-31P0PY18K-A174 | ITT Cannon, LLC | Description: CABLE ASSY D-NANO-D 31P 457.2MM Packaging: Bag Contact Finish: Gold Color: Yellow, Individual Length: 1.50' (457.20mm) Shielding: Unshielded Number of Positions: 31 Type: D-Type, Nano-D 1st Connector: Plug, Male Pins 2nd Connector: Individual Wire Leads Contact Finish Thickness: 50.0µin (1.27µm) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-31P0PY18S | ITT Cannon, LLC | Description: CABLE ASSY D-NANO-D 31P 457.2MM Packaging: Bulk Contact Finish: Gold Color: Yellow, Individual Length: 1.50' (457.20mm) Shielding: Unshielded Number of Positions: 31 Type: D-Type, Nano-D 1st Connector: Plug, Male Pins 2nd Connector: Individual Wire Leads Contact Finish Thickness: 50.0µin (1.27µm) Part Status: Active | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-31PBRT-T-A174 | ITT Cannon | D-Sub Micro-D Connectors | auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-31PBRTT | ITT Cannon, LLC | Description: CONN D-TYPE PLUG 31POS R/A SLDR Packaging: Bulk Connector Type: Plug, Male Pins Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 31 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Yellow Chromate Plated Cadmium Part Status: Active | auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-31PBRTT-A174 | ITT Cannon, LLC | Description: CONN D-TYPE PLUG 31POS R/A SLDR Packaging: Bulk Connector Type: Plug, Male Pins Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 31 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Nickel Plated, Electroless Part Status: Active | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-31S0PY18T | ITT Cannon | D-Sub Micro-D Connectors Nano Micromini Stranded Wire Conn | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-31S0PY18T | ITT Cannon, LLC | Description: NANO FMALE 31POS 18" YEL | auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-31S0PY18T-A174 | ITT Cannon | D-Sub Cables | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-31S0PY18T-A174 | ITT Cannon, LLC | Description: NANO FMALE 31POS 18" YEL | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-31SBRT-T-A174 | ITT Cannon | D-Sub Micro-D Connectors | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-31SBRTT | ITT Cannon | D-Sub Micro-D Connectors Nano Micromini Board Mount Conn | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-31SBRTT | ITT Cannon, LLC | Description: CONN D-TYPE RCPT 31POS R/A SLDR Packaging: Bulk Connector Type: Receptacle, Female Sockets Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 31 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Yellow Chromate Plated Cadmium Part Status: Active | auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-31SBRTT-A174 | ITT Cannon, LLC | Description: CONN D-TYPE RCPT 31POS R/A SLDR Packaging: Bulk Connector Type: Receptacle, Female Sockets Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 31 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Nickel Plated, Electroless Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-37P0PY18K-A174 | ITT Cannon, LLC | Description: NANO MALE 37POS 18" YEL | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-37P0PY18S | ITT Cannon, LLC | Description: NANO MALE 37POS 18" YEL JACKSCRE | auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-37PBRT-T-A174 | ITT Cannon | D-Sub Micro-D Connectors | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-37PBRTT | ITT Cannon, LLC | Description: CONN D-TYPE PLUG 37POS R/A SLDR | auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-37PBRTT-A174 | ITT Cannon, LLC | Description: CONN D-TYPE PLUG 37POS R/A SLDR Packaging: Bulk Connector Type: Plug, Male Pins Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 37 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Nickel Plated, Electroless Part Status: Active | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-37S0PY18T | ITT Cannon, LLC | Description: CABLE ASSY D-NANO-D 37P 457.2MM Packaging: Bulk Contact Finish: Gold Color: Yellow, Individual Length: 1.50' (457.20mm) Shielding: Unshielded Number of Positions: 37 Type: D-Type, Nano-D 1st Connector: Receptacle, Female Sockets 2nd Connector: Individual Wire Leads Contact Finish Thickness: 50.0µin (1.27µm) | auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-37S0PY18T-A174 | ITT Cannon | D-Sub Cables | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-37S0PY18T-A174 | ITT Cannon, LLC | Description: NANO FMALE 37POS 18" YEL | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-37SBRT-T-A174 | ITT Cannon | D-Sub Micro-D Connectors | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-37SBRTT | ITT Cannon, LLC | Description: CONN D-TYPE RCPT 37POS R/A SLDR Packaging: Bulk Connector Type: Receptacle, Female Sockets Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 37 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Yellow Chromate Plated Cadmium Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-37SBRTT-A174 | ITT Cannon, LLC | Description: CONN D-TYPE RCPT 37POS R/A SLDR Packaging: Bulk Connector Type: Receptacle, Female Sockets Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 37 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Nickel Plated, Electroless Part Status: Active | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-51P0PY18K | ITT Cannon | D-Sub Cables | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-51P0PY18K-A174 | ITT Cannon, LLC | Description: NANO MALE 51POS 18" YEL | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-51P0PY18S | ITT Cannon | D-Sub Micro-D Connectors Nano Micromini Stranded Wire Conn | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-51P0PY18S | ITT Cannon, LLC | Description: CABLE ASSY D-NANO-D 51P 457.2MM Packaging: Bulk Contact Finish: Gold Color: Yellow, Individual Length: 1.50' (457.20mm) Shielding: Unshielded Number of Positions: 51 Type: D-Type, Nano-D 1st Connector: Plug, Male Pins 2nd Connector: Individual Wire Leads Contact Finish Thickness: 50.0µin (1.27µm) | auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-51PBRT-T-A174 | ITT Cannon | D-Sub Micro-D Connectors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-51PBRTT | ITT Cannon | D-Sub Micro-D Connectors Nano Micromini Board Mount Conn | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-51PBRTT | ITT Cannon, LLC | Description: CONN D-TYPE PLUG 51POS R/A SLDR Packaging: Bulk Connector Type: Plug, Male Pins Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 51 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Yellow Chromate Plated Cadmium Part Status: Active | auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-51PBRTT-A174 | ITT Cannon, LLC | Description: CONN D-TYPE PLUG 51POS R/A SLDR Packaging: Bulk Connector Type: Plug, Male Pins Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 51 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Nickel Plated, Electroless Part Status: Active | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-51S0PY18T | ITT Cannon | D-Sub Micro-D Connectors Nano Micromini Stranded Wire Conn | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-51S0PY18T | ITT Cannon, LLC | Description: NANO FMALE 51POS 18" YEL | auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-51S0PY18T-A174 | ITT Cannon | D-Sub Cables | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-51S0PY18T-A174 | ITT Cannon, LLC | Description: NANO FMALE 51POS 18" YEL Packaging: Bag Contact Finish: Gold Color: Yellow, Individual Length: 1.50' (457.20mm) Shielding: Unshielded Number of Positions: 51 Type: D-Type, Nano-D 1st Connector: Receptacle, Female Sockets 2nd Connector: Individual Wire Leads Contact Finish Thickness: 50.0µin (1.27µm) Part Status: Active | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-51SBRT-T-A174 | ITT Cannon | D-Sub Micro-D Connectors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-51SBRTT | ITT Cannon, LLC | Description: CONN D-TYPE RCPT 51POS R/A SLDR Packaging: Bulk Connector Type: Receptacle, Female Sockets Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 51 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Yellow Chromate Plated Cadmium Part Status: Active | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-51SBRTT | ITT Cannon | D-Sub Micro-D Connectors Nano Micromini Board Mount Conn | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-51SBRTT-A174 | ITT Cannon, LLC | Description: CONN D-TYPE RCPT 51POS R/A SLDR Packaging: Bulk Connector Type: Receptacle, Female Sockets Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 51 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Nickel Plated, Electroless Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-9P0PY18K | ITT Cannon | D-Sub Cables | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-9P0PY18K-A174 | ITT Cannon, LLC | Description: CABLE ASSY D-NANO-D 9P 457.2MM Packaging: Bag Contact Finish: Gold Color: Yellow, Individual Length: 1.50' (457.20mm) Shielding: Unshielded Number of Positions: 9 Type: D-Type, Nano-D 1st Connector: Plug, Male Pins 2nd Connector: Individual Wire Leads Contact Finish Thickness: 50.0µin (1.27µm) | auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-9P0PY18S | ITT Cannon | D-Sub Micro-D Connectors Nano Micromini Stranded Wire Conn | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-9P0PY18S | ITT Cannon, LLC | Description: CABLE ASSY D-NANO-D 9P 457.2MM Packaging: Bulk Contact Finish: Gold Color: Yellow, Individual Length: 1.50' (457.20mm) Shielding: Unshielded Number of Positions: 9 Type: D-Type, Nano-D 1st Connector: Plug, Male Pins 2nd Connector: Individual Wire Leads Contact Finish Thickness: 50.0µin (1.27µm) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-9PBRT-T-A174 | ITT Cannon | D-Sub Micro-D Connectors | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-9PBRTT | ITT Cannon, LLC | Description: CONN D-TYPE PLUG 9POS R/A SLDR Packaging: Bulk Connector Type: Plug, Male Pins Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 9 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Yellow Chromate Plated Cadmium Part Status: Active | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-9PBRTT | ITT Cannon | D-Sub Micro-D Connectors Nano Micromini Board Mount Conn | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-9PBRTT-A174 | ITT Cannon, LLC | Description: CONN D-TYPE PLUG 9POS R/A SLDR Packaging: Bulk Connector Type: Plug, Male Pins Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 9 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Nickel Plated, Electroless Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-9S0PY18T | ITT Cannon | D-Sub Micro-D Connectors Nano Micromini Stranded Wire Conn | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-9S0PY18T | ITT Cannon, LLC | Description: CABLE ASSY D-NANO-D 9P 457.2MM Packaging: Bulk Contact Finish: Gold Color: Yellow, Individual Length: 1.50' (457.20mm) Shielding: Unshielded Number of Positions: 9 Type: D-Type, Nano-D 1st Connector: Receptacle, Female Sockets 2nd Connector: Individual Wire Leads Contact Finish Thickness: 50.0µin (1.27µm) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-9S0PY18T-A174 | ITT Cannon | D-Sub Cables | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-9S0PY18T-A174 | ITT Cannon, LLC | Description: CABLE ASSY D-NANO-D 9P 457.2MM Packaging: Bag Contact Finish: Gold Color: Yellow, Individual Length: 1.50' (457.20mm) Shielding: Unshielded Number of Positions: 9 Type: D-Type, Nano-D 1st Connector: Receptacle, Female Sockets 2nd Connector: Individual Wire Leads Contact Finish Thickness: 50.0µin (1.27µm) | auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-9SBRT-T-A174 | ITT Cannon | D-Sub Micro-D Connectors | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-9SBRTT | ITT Cannon | D-Sub Micro-D Connectors Nano Micromini Board Mount Conn | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD-9SBRTT | ITT Cannon, LLC | Description: CONN D-TYPE RCPT 9POS R/A SOLDER Packaging: Bulk Connector Type: Receptacle, Female Sockets Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 9 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Yellow Chromate Plated Cadmium Part Status: Active | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD-9SBRTT-A174 | ITT Cannon, LLC | Description: CONN D-TYPE RCPT 9POS R/A SLDR Packaging: Bulk Connector Type: Receptacle, Female Sockets Contact Finish: Gold Current Rating (Amps): 1A Mounting Type: Through Hole, Right Angle Number of Positions: 9 Number of Rows: 2 Contact Type: Signal Flange Feature: Housing/Shell (0-80) Termination: Solder Connector Style: D-Type, Nano-D Contact Finish Thickness: 50.0µin (1.27µm) Shell Material, Finish: Aluminum, Nickel Plated, Electroless Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD01N60-1G | onsemi | Description: MOSFET N-CH 600V 1.5A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 50µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V | auf Bestellung 10766 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD01N60-1G | ON Semiconductor | Trans MOSFET N-CH 600V 1.5A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD01N60-1G | onsemi | MOSFET NFET DPAK 600V 1.5A 8.5O | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD01N60-1G | ONSEMI | Description: ONSEMI - NDD01N60-1G - NDD01N60-1G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 10766 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD01N60-1G | onsemi | Description: MOSFET N-CH 600V 1.5A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 50µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD01N60T4G | onsemi | Description: MOSFET N-CH 600V 1.5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 50µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD01N60T4G | ON Semiconductor | Trans MOSFET N-CH 600V 1.5A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD01N60T4G | onsemi | MOSFET NFET DPAK 600V 1.5A 8.5O | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD02N40-1G | onsemi | Description: MOSFET N-CH 400V 1.7A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 5.5Ohm @ 220mA, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: I-PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 121 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD02N40T4G | onsemi | Description: MOSFET N-CH 400V 1.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 5.5Ohm @ 220mA, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 121 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD02N40T4G | onsemi | Description: MOSFET N-CH 400V 1.7A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 5.5Ohm @ 220mA, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 121 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD02N60Z-1G | ON Semiconductor | MOSFET NFET IPAK 600V 2.2A 4.8R | auf Bestellung 1439 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD02N60Z-1G | ONSEMI | Description: ONSEMI - NDD02N60Z-1G - Leistungs-MOSFET, n-Kanal, 600 V, 2.2 A, 4 ohm, TO-251 (IPAK), Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 2.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 57W Bauform - Transistor: TO-251 (IPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 4ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 88500 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD02N60Z-1G | onsemi | Description: MOSFET N-CH 600V 2.2A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD02N60Z-1G | ON Semiconductor | Trans MOSFET N-CH 600V 2.2A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD02N60ZT4G | ONSEMI | Description: ONSEMI - NDD02N60ZT4G - MOSFET,N CH,W DIODE,600V,2.2A,DPAK tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 53629 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD02N60ZT4G | onsemi | Description: MOSFET N-CH 600V 2.2A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD02N60ZT4G | ON Semiconductor | Trans MOSFET N-CH 600V 2.2A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD02N60ZT4G | onsemi | Description: MOSFET N-CH 600V 2.2A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N40Z-1G | ON Semiconductor | Trans MOSFET N-CH 400V 2.1A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N40Z-1G | onsemi | Description: MOSFET N-CH 400V 2.1A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V | auf Bestellung 10125 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD03N40Z-1G | ON Semiconductor | MOSFET NFET DPAK 400V 2.4A 3.4OH | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N40Z-1G | ONSEMI | Description: ONSEMI - NDD03N40Z-1G - NDD03N40Z-1G, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 10125 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N40Z-1G | onsemi | Description: MOSFET N-CH 400V 2.1A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N40ZT4G | onsemi | Description: MOSFET N-CH 400V 2.1A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N40ZT4G | ON Semiconductor | MOSFET NFET DPAK 60V 2.4A 3.4OHM | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N40ZT4G | ONSEMI | Description: ONSEMI - NDD03N40ZT4G - NDD03N40ZT4G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N40ZT4G | onsemi | Description: MOSFET N-CH 400V 2.1A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD03N40ZT4G | ON Semiconductor | Trans MOSFET N-CH 400V 2.1A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N50Z-1G | onsemi | Description: MOSFET N-CH 500V 2.6A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.15A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N50Z-1G | onsemi | Description: MOSFET N-CH 500V 2.6A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.15A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 25 V | auf Bestellung 2656 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD03N50Z-1G | ONSEMI | Description: ONSEMI - NDD03N50Z-1G - NDD03N50Z-1G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2656 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N50ZT4G | onsemi | Description: MOSFET N-CH 500V 2.6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.15A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N50ZT4G | ONSEMI | Description: ONSEMI - NDD03N50ZT4G - MOSFET,N CH,W DIODE,500V,2.6A,DPAK tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 21261 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N50ZT4G | onsemi | Description: MOSFET N-CH 500V 2.6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.15A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N50ZT4G | onsemi | Description: MOSFET N-CH 500V 2.6A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.15A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V | auf Bestellung 20236 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD03N60Z-1G | ONSEMI | Description: ONSEMI - NDD03N60Z-1G - NDD03N60Z-1G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 43072 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N60Z-1G | onsemi | Description: MOSFET N-CH 600V 2.6A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N60Z-1G | ON Semiconductor | Trans MOSFET N-CH 600V 2.6A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N60Z-1G | ON Semiconductor | Trans MOSFET N-CH 600V 2.6A 3-Pin(3+Tab) IPAK Tube | auf Bestellung 725 Stücke: Lieferzeit 14-21 Tag (e) |
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| NDD03N60Z-1G | ON Semiconductor | auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NDD03N60Z-1G | onsemi | Description: MOSFET N-CH 600V 2.6A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V | auf Bestellung 43072 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD03N60Z-1G | ON Semiconductor | Trans MOSFET N-CH 600V 2.6A 3-Pin(3+Tab) IPAK Tube | auf Bestellung 725 Stücke: Lieferzeit 14-21 Tag (e) |
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| NDD03N60ZG | auf Bestellung 75 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NDD03N60ZT4G | ONSEMI | Description: ONSEMI - NDD03N60ZT4G - MOSFET,N CH,W DIODE,600V,2.6A,DPAK tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N60ZT4G | onsemi | Description: MOSFET N-CH 600V 2.6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N60ZT4G | onsemi | MOSFET NFET DPAK 2.6A 3.6R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N60ZT4G | ON Semiconductor | Trans MOSFET N-CH 600V 2.6A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N80Z-1G | onsemi | Description: MOSFET N-CH 800V 2.9A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.2A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V | auf Bestellung 108204 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD03N80Z-1G | ONSEMI | Description: ONSEMI - NDD03N80Z-1G - NDD03N80Z-1G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 141954 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N80Z-1G | onsemi | Description: MOSFET N-CH 800V 2.9A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.2A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N80Z-1G | ON Semiconductor | MOSFET NFET DPAK 800V 2.9A 4.5OH | auf Bestellung 1110 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N80Z-1G | ON Semiconductor | Trans MOSFET N-CH 800V 2.9A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N80ZT4G | onsemi | MOSFET Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N80ZT4G | ON Semiconductor | Trans MOSFET N-CH 800V 2.9A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N80ZT4G | onsemi | Description: MOSFET N-CH 800V 2.9A DPAK-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.2A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N80ZT4G | onsemi | Description: MOSFET N-CH 800V 2.9A DPAK-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.2A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD03N80ZT4G | onsemi | Description: MOSFET N-CH 800V 2.9A DPAK-3 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.2A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD04N50Z-1G | onsemi | Description: MOSFET N-CH 500V 3A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 308 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD04N50Z-1G | onsemi | Description: MOSFET N-CH 500V 3A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 308 pF @ 25 V | auf Bestellung 28275 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD04N50Z-1G | ON Semiconductor | MOSFET 600V 3A HV MOSFET IPAK | auf Bestellung 1575 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD04N50Z-1G | ON Semiconductor | Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD04N50Z-1G | ONSEMI | Description: ONSEMI - NDD04N50Z-1G - NDD04N50Z-1G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 28275 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD04N50ZT4G | onsemi | Description: MOSFET N-CH 500V 3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 308 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD04N50ZT4G | ON Semiconductor | MOSFET 500V 3A HV MOSFET DPAK | auf Bestellung 814 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD04N50ZT4G | ON Semiconductor | Trans MOSFET N-CH 500V 3A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD04N50ZT4G | ONSEMI | Description: ONSEMI - NDD04N50ZT4G - MOSFET,N CH,W DIODE,500V,3A,DPAK tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 155796 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD04N50ZT4G | onsemi | Description: MOSFET N-CH 500V 3A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 308 pF @ 25 V | auf Bestellung 77085 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD04N50ZT4G | onsemi | Description: MOSFET N-CH 500V 3A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 308 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD04N60Z-1G | onsemi | Description: MOSFET N-CH 600V 4.1A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD04N60Z-1G | ON Semiconductor | MOSFET NFET IPAK 600V 4A 1.8R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD04N60Z-1G | ON Semiconductor | Trans MOSFET N-CH 600V 4.1A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD04N60ZT4G | onsemi | MOSFETs NFET DPAK 600V 4A 1.8R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD04N60ZT4G | ON Semiconductor | Trans MOSFET N-CH 600V 4.1A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD04N60ZT4G | onsemi | Description: MOSFET N-CH 600V 4.1A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD04N60ZT4G | onsemi | Description: MOSFET N-CH 600V 4.1A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD05N50Z-1G | ONSEMI | Description: ONSEMI - NDD05N50Z-1G - Leistungs-MOSFET, n-Kanal, 500 V, 4.7 A, 1.25 ohm, TO-251 (IPAK), Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 500V rohsCompliant: YES Dauer-Drainstrom Id: 4.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 83W Bauform - Transistor: TO-251 (IPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.25ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 236925 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD05N50Z-1G | ON Semiconductor | Trans MOSFET N-CH 500V 4.7A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD05N50Z-1G | onsemi | Description: MOSFET N-CH 500V 4.7A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V | auf Bestellung 428400 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD05N50Z-1G | onsemi | Description: MOSFET N-CH 500V 4.7A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD05N50Z-1G9 | onsemi | Description: RF MOSFET 500V Packaging: Bulk Part Status: Active | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD05N50Z-1G9 | ONSEMI | Description: ONSEMI - NDD05N50Z-1G9 - NFET DPAK 500V 4.7A 1.5OH tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD05N50ZT4G | ON Semiconductor | MOSFET NFET IPAK 500V 5A 1.2OHM | auf Bestellung 1900 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD05N50ZT4G | onsemi | Description: MOSFET N-CH 500V 4.7A DPAK | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD05N50ZT4G | ON Semiconductor | Trans MOSFET N-CH 500V 4.7A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD05N50ZT4G | onsemi | Description: MOSFET N-CH 500V 4.7A DPAK | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD36PT6-2AIT | Insignis Technology Corporation | Description: IC SDRAM 256MBIT 200MHZ 66TSOP | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD36PT6-2AIT | Insignis Technology Corporation | Description: IC SDRAM 256MBIT 200MHZ 66TSOP | auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD36PT6-2AIT TR | Insignis Technology Corporation | Description: IC DRAM 256MBIT PAR 66TSOP II Packaging: Tape & Reel (TR) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 200 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP II Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 16M x 16 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD36PT6-2AIT TR | Insignis Technology Corporation | Description: IC DRAM 256MBIT PAR 66TSOP II Packaging: Cut Tape (CT) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 200 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP II Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 16M x 16 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD5060 | auf Bestellung 13086 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NDD506A | FAIRCHIL | TO-263 | auf Bestellung 2600 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD506A | FAIRCHIL | 09+ | auf Bestellung 2518 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD506AL | auf Bestellung 525 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NDD56PT6-2AIT TR | Insignis Technology Corporation | Description: IC DRAM 512MBIT PAR 66TSOP II Packaging: Cut Tape (CT) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 200 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP II Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 32M x 16 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD56PT6-2AIT TR | Insignis Technology Corporation | Description: IC DRAM 512MBIT PAR 66TSOP II Packaging: Tape & Reel (TR) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 200 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP II Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 32M x 16 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N360U1-1G | ONSEMI | Description: ONSEMI - NDD60N360U1-1G - NDD60N360U1-1G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 37650 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N360U1-1G | onsemi | Description: MOSFET N-CH 600V 11A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I-PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V | auf Bestellung 37650 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD60N360U1-1G | ON Semiconductor | MOSFET NFET DPAK 600V 114A 360MO | auf Bestellung 525 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N360U1-1G | onsemi | Description: MOSFET N-CH 600V 11A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I-PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N360U1-35G | ON Semiconductor | MOSFET NFET DPAK 600V 114A 360MO | auf Bestellung 525 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N360U1-35G | ON Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N360U1-35G | ONSEMI | Description: ONSEMI - NDD60N360U1-35G - NDD60N360U1-35G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 32775 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N360U1-35G | ON Semiconductor | Description: MOSFET N-CH 600V 114A IPAK | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N360U1T4G | ONSEMI | Description: ONSEMI - NDD60N360U1T4G - NDD60N360U1T4G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 37626 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N360U1T4G | ON Semiconductor | Description: MOSFET N-CH 600V 114A DPAK | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N360U1T4G | ON Semiconductor | MOSFET NFET DPAK 600V 114A 360MO | auf Bestellung 650 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N550U1-1G | ONSEMI | Description: ONSEMI - NDD60N550U1-1G - NDD60N550U1-1G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 20475 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N550U1-1G | onsemi | Description: MOSFET N-CH 600V 8.2A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I-PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N550U1-1G | ON Semiconductor | MOSFET NFET DPAK 600V 8.2A 550MO | auf Bestellung 3075 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N550U1-1G | onsemi | Description: MOSFET N-CH 600V 8.2A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I-PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V | auf Bestellung 20475 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD60N550U1-1G | ON Semiconductor | Trans MOSFET N-CH 600V 8.2A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N550U1-35G | ON Semiconductor | MOSFET NFET DPAK 600V 8.2A 550MO | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N550U1-35G | onsemi | Description: MOSFET N-CH 600V 8.2A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I-PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N550U1-35G | ON Semiconductor | Trans MOSFET N-CH 600V 8.2A 3-Pin(2+Tab) DPAK Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N550U1-35G | ONSEMI | Description: ONSEMI - NDD60N550U1-35G - EACH tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 20625 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N550U1-35G | onsemi | Description: MOSFET N-CH 600V 8.2A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I-PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V | auf Bestellung 20625 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD60N550U1T4G | ON Semiconductor | Trans MOSFET N-CH 600V 8.2A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N550U1T4G | onsemi | Description: MOSFET N-CH 600V 8.2A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N745U1-1G | onsemi | Description: MOSFET N-CH 600V 6.6A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V Power Dissipation (Max): 84W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N745U1-1G | ON Semiconductor | MOSFET NFET DPAK 600V 6.8A | auf Bestellung 1725 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N745U1-35G | ON Semiconductor | MOSFET Power MOSFET 600V 6.8A 745 m_ Single | auf Bestellung 485 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N745U1-35G | ONSEMI | Description: ONSEMI - NDD60N745U1-35G - NDD60N745U1-35G, SHIFT REGISTERS tariffCode: 85423990 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 22175 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N745U1-35G | onsemi | Description: MOSFET N-CH 600V 6.6A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V Power Dissipation (Max): 84W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V | auf Bestellung 22175 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD60N745U1-35G | ON Semiconductor | Trans MOSFET N-CH 600V 6.6A 3-Pin(2+Tab) DPAK Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N745U1-35G | onsemi | Description: MOSFET N-CH 600V 6.6A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V Power Dissipation (Max): 84W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N745U1T4G | onsemi | Description: MOSFET N-CH 600V 6.6A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V Power Dissipation (Max): 84W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V | auf Bestellung 10565 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD60N745U1T4G | ONSEMI | Description: ONSEMI - NDD60N745U1T4G - NDD60N745U1T4G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 12065 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N745U1T4G | onsemi | Description: MOSFET N-CH 600V 6.6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V Power Dissipation (Max): 84W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N900U1-1G | onsemi | Description: MOSFET N-CH 600V 5.7A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N900U1-1G | ON Semiconductor | Trans MOSFET N-CH 600V 5.7A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N900U1-1G | ONSEMI | Description: ONSEMI - NDD60N900U1-1G - NDD60N900U1-1G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 29016 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N900U1-1G | ON Semiconductor | MOSFET NFET DPAK 600V 5.9A | auf Bestellung 3675 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N900U1-35G | ON Semiconductor | MOSFET NFET DPAK 600V 5.9A | auf Bestellung 975 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N900U1-35G | onsemi | Description: MOSFET N-CH 600V 5.7A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N900U1-35G | ON Semiconductor | Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N900U1T4G | ON Semiconductor | Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 1380 Stücke: Lieferzeit 14-21 Tag (e) |
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| NDD60N900U1T4G | onsemi | Description: MOSFET N-CH 600V 5.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N900U1T4G | ON Semiconductor | Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N900U1T4G | onsemi | Description: MOSFET N-CH 600V 5.7A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 50 V | auf Bestellung 1922 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD60N900U1T4G | ON Semiconductor | MOSFET NFET DPAK 600V 5.9A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDD60N900U1T4G | ONSEMI | Description: ONSEMI - NDD60N900U1T4G - NDD60N900U1T4G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1922 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDDL01N60Z-1G | ON Semiconductor | Trans MOSFET N-CH 600V 0.8A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDDL01N60Z-1G | onsemi | Description: MOSFET N-CH 600V 800MA IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 15Ohm @ 400mA, 10V Power Dissipation (Max): 26W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDDL01N60Z-1G | onsemi | MOSFET NFET DPAK 600V 1.5A 8.50H | auf Bestellung 1411 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDDL01N60Z-1G | ONSEMI | Description: ONSEMI - NDDL01N60Z-1G - EACH tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 9900 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDDL01N60Z-1G | onsemi | Description: MOSFET N-CH 600V 800MA IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 15Ohm @ 400mA, 10V Power Dissipation (Max): 26W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 25 V | auf Bestellung 9900 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDDL01N60ZT4G | onsemi | MOSFET NFET DPAK 600V 0.4A 15OHM | auf Bestellung 2145 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDDL01N60ZT4G | onsemi | Description: MOSFET N-CH 600V 800MA DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 15Ohm @ 400mA, 10V Power Dissipation (Max): 26W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 25 V | auf Bestellung 22500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDDL01N60ZT4G | ONSEMI | Description: ONSEMI - NDDL01N60ZT4G - EACH tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: YES usEccn: TBC SVHC: No SVHC (14-Jun-2023) | auf Bestellung 22500 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDDL01N60ZT4G | onsemi | Description: MOSFET N-CH 600V 800MA DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 15Ohm @ 400mA, 10V Power Dissipation (Max): 26W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDDL01N60ZT4G | ON Semiconductor | Trans MOSFET N-CH 600V 0.8A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDDP010N25AZ-1H | ON Semiconductor | MOSFET NCH 10A 250V TP(IPAK | auf Bestellung 208 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDDP010N25AZ-1H | ON Semiconductor | Description: MOSFET N-CH 250V 10A IPAK/TP | auf Bestellung 9500 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDDP010N25AZT4H | ON Semiconductor | auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NDDP010N25AZT4H | ON Semiconductor | Trans MOSFET N-CH 250V 10A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDDP010N25AZT4H | ON Semiconductor | MOSFET NCH 10A 250V TP-FA(DPAK) | auf Bestellung 1004 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDDP010N25AZT4H | onsemi | Description: MOSFET N-CH 250V 10A DPAK/TP-FA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V Power Dissipation (Max): 1W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: DPAK/TP-FA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDDP010N25AZT4H | onsemi | Description: MOSFET N-CH 250V 10A DPAK/TP-FA Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V Power Dissipation (Max): 1W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: DPAK/TP-FA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V | auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDDP010N25AZT4H | ON Semiconductor | Trans MOSFET N-CH 250V 10A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NDDP010N25AZT4H | onsemi | Description: MOSFET N-CH 250V 10A DPAK/TP-FA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V Power Dissipation (Max): 1W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: DPAK/TP-FA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH |