Produkte > QH8

MOSFET 20V Pch+Pch Si MOSFET

auf Bestellung 2743 Stücke:

Lieferzeit 14-28 Tag (e)

25+	2.08 EUR
31+	1.7 EUR
100+	1.33 EUR
500+	1.12 EUR
1000+	0.92 EUR
3000+	0.86 EUR
6000+	0.82 EUR

Mindestbestellmenge: 25

QH8JA1TCR

Description: ROHM - QH8JA1TCR - Dual-MOSFET, p-Kanal, 20 V, 5 A, 0.028 ohm, TSMT, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20
Dauer-Drainstrom Id: 5
Rds(on)-Messspannung Vgs: 4.5
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 1.1
Bauform - Transistor: TSMT
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: p-Kanal
Betriebswiderstand, Rds(on): 0.028
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 1.2
SVHC: No SVHC (08-Jul-2021)

auf Bestellung 2324 Stücke:

Lieferzeit 14-21 Tag (e)

QH8JA1TCR

Description: MOSFET 2P-CH 20V 5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 2192 Stücke:

Lieferzeit 21-28 Tag (e)

13+	2.13 EUR
15+	1.74 EUR
100+	1.35 EUR
500+	1.14 EUR
1000+	0.93 EUR

Mindestbestellmenge: 13

QH8JA1TCR

auf Bestellung 2324 Stücke:

Lieferzeit 14-21 Tag (e)

QH8JA1TCR

Description: MOSFET 2P-CH 20V 5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

Produkt ist nicht verfügbar

QH8JA1TCR

Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -5A; Idm: -18A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Pulsed drain current: -18A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 10.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

QH8JA1TCR

Produkt ist nicht verfügbar

QH8JB5TCR

Description: ROHM - QH8JB5TCR - Dual-MOSFET, p-Kanal, 40 V, 40 V, 5 A, 5 A, 0.033 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 40V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm
Verlustleistung, p-Kanal: 1.5W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: TSMT
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 1.5W
Betriebstemperatur, max.: 150°C

auf Bestellung 8565 Stücke:

Lieferzeit 14-21 Tag (e)

QH8JB5TCR

Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -5A; Idm: -20A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 17.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

QH8JB5TCR

Produkt ist nicht verfügbar

QH8JB5TCR

Description: MOSFET 2P-CH 40V 5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 2706 Stücke:

Lieferzeit 21-28 Tag (e)

9+	2.99 EUR
11+	2.45 EUR
100+	1.9 EUR
500+	1.61 EUR
1000+	1.31 EUR

Mindestbestellmenge: 9

QH8JB5TCR

MOSFET -40V Dual Pch+Pch Small Signal MOSFET

auf Bestellung 6986 Stücke:

Lieferzeit 14-28 Tag (e)

18+	2.94 EUR
22+	2.4 EUR
100+	1.87 EUR
500+	1.58 EUR
1000+	1.29 EUR
3000+	1.24 EUR
6000+	1.18 EUR

Mindestbestellmenge: 18

QH8JB5TCR

Description: ROHM - QH8JB5TCR - Dual-MOSFET, p-Kanal, 40 V, 40 V, 5 A, 5 A, 0.033 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
Dauer-Drainstrom Id, p-Kanal: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 40V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm
Verlustleistung, p-Kanal: 1.5W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: TSMT
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 1.5W
Betriebstemperatur, max.: 150°C

auf Bestellung 8565 Stücke:

Lieferzeit 14-21 Tag (e)

QH8JB5TCR

Description: MOSFET 2P-CH 40V 5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

Produkt ist nicht verfügbar

QH8JC5TCR

Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.5A; Idm: -14A; 1.5W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 101mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

QH8JC5TCR

Produkt ist nicht verfügbar

QH8JC5TCR

Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

Produkt ist nicht verfügbar

QH8JC5TCR

MOSFET -60V Dual Pch+Pch Small Signal MOSFET

auf Bestellung 13239 Stücke:

Lieferzeit 14-28 Tag (e)

18+	2.94 EUR
22+	2.4 EUR
100+	1.87 EUR
500+	1.58 EUR
1000+	1.29 EUR
3000+	1.24 EUR
6000+	1.18 EUR

Mindestbestellmenge: 18

QH8JC5TCR

Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 4688 Stücke:

Lieferzeit 21-28 Tag (e)

9+	2.91 EUR
11+	2.38 EUR
100+	1.85 EUR
500+	1.57 EUR
1000+	1.28 EUR

Mindestbestellmenge: 9

QH8JE5TCR

MOSFET 100V Dual Pch+Pch, TSMT8, Power MOSFET

auf Bestellung 3000 Stücke:

Lieferzeit 14-28 Tag (e)

24+	2.23 EUR
27+	1.99 EUR
100+	1.36 EUR
500+	1.13 EUR
1000+	0.96 EUR
3000+	0.87 EUR
6000+	0.81 EUR

Mindestbestellmenge: 24

QH8K22TCR

Description: MOSFET 2N-CH 40V 6.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 20V
Rds On (Max) @ Id, Vgs: 46mOhm @ 6.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 10µA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 15000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.64 EUR
6000+	0.61 EUR
9000+	0.56 EUR

Mindestbestellmenge: 3000

QH8K22TCR

MOSFET QH8K22 is low on - resistance MOSFET for Switching. 40V Nch+Nch Small Signal MOSFET.

auf Bestellung 2407 Stücke:

Lieferzeit 14-28 Tag (e)

32+	1.64 EUR
37+	1.43 EUR
100+	0.99 EUR
500+	0.83 EUR
1000+	0.7 EUR
3000+	0.63 EUR
6000+	0.59 EUR

Mindestbestellmenge: 32

QH8K22TCR

Description: MOSFET 2N-CH 40V 6.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 20V
Rds On (Max) @ Id, Vgs: 46mOhm @ 6.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 10µA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 18317 Stücke:

Lieferzeit 21-28 Tag (e)

16+	1.66 EUR
18+	1.46 EUR
100+	1.01 EUR
500+	0.84 EUR
1000+	0.72 EUR

Mindestbestellmenge: 16

QH8K26TR

MOSFET QH8K26 is low on-resistance and Small Surface Mount Package MOSFET for switching and motor drive.

auf Bestellung 2405 Stücke:

Lieferzeit 14-28 Tag (e)

23+	2.3 EUR
28+	1.88 EUR
100+	1.47 EUR
500+	1.25 EUR
1000+	1.01 EUR
3000+	0.95 EUR
6000+	0.91 EUR

Mindestbestellmenge: 23

QH8K26TR

Description: MOSFET 2N-CH 40V 7A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V
Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 1698 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.34 EUR
14+	1.92 EUR
100+	1.5 EUR
500+	1.27 EUR
1000+	1.03 EUR

Mindestbestellmenge: 12

QH8K26TR

Description: MOSFET 2N-CH 40V 7A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V
Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

Produkt ist nicht verfügbar

QH8K26TR

Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7A; Idm: 18A; 2.6W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7A
Pulsed drain current: 18A
Power dissipation: 2.6W
Case: TSMT8
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 2.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

QH8K26TR

Produkt ist nicht verfügbar

QH8K51TR

Description: MOSFET 2N-CH 100V 2A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 12000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.04 EUR
6000+	0.99 EUR
9000+	0.94 EUR

Mindestbestellmenge: 3000

QH8K51TR

MOSFET QH8K51 is the low on - resistance MOSFET for switching application. 100V Nch+Nch Small Signal MOSFET.

auf Bestellung 5985 Stücke:

Lieferzeit 14-28 Tag (e)

22+	2.47 EUR
26+	2.01 EUR
100+	1.57 EUR
500+	1.33 EUR
1000+	1.08 EUR
3000+	1.02 EUR
6000+	0.97 EUR

Mindestbestellmenge: 22

QH8K51TR

Description: MOSFET 2N-CH 100V 2A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 16760 Stücke:

Lieferzeit 21-28 Tag (e)

11+	2.52 EUR
13+	2.05 EUR
100+	1.6 EUR
500+	1.35 EUR
1000+	1.1 EUR

Mindestbestellmenge: 11

QH8KA1TCR

MOSFET 30V Nch+Nch Si MOSFET

auf Bestellung 3000 Stücke:

Lieferzeit 14-28 Tag (e)

36+	1.47 EUR
41+	1.27 EUR
100+	0.88 EUR
500+	0.74 EUR
1000+	0.63 EUR
3000+	0.57 EUR
6000+	0.53 EUR

Mindestbestellmenge: 36

QH8KA1TCR

Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
Rds On (Max) @ Id, Vgs: 73mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 2675 Stücke:

Lieferzeit 21-28 Tag (e)

18+	1.46 EUR
21+	1.26 EUR
100+	0.87 EUR
500+	0.73 EUR
1000+	0.62 EUR

Mindestbestellmenge: 18

QH8KA1TCR

Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
Rds On (Max) @ Id, Vgs: 73mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

Produkt ist nicht verfügbar

QH8KA2TCR

Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 2280 Stücke:

Lieferzeit 21-28 Tag (e)

17+	1.56 EUR
20+	1.35 EUR
100+	0.94 EUR
500+	0.78 EUR
1000+	0.67 EUR

Mindestbestellmenge: 17

QH8KA2TCR

Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.5A; Idm: 12A; 1.5W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

QH8KA2TCR

Produkt ist nicht verfügbar

QH8KA2TCR

Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 2280 Stücke:

Lieferzeit 21-28 Tag (e)

15+	1.79 EUR
17+	1.56 EUR
100+	1.08 EUR
500+	0.9 EUR
1000+	0.77 EUR

Mindestbestellmenge: 15

QH8KA2TCR

Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

Produkt ist nicht verfügbar

QH8KA2TCR

MOSFET 30V Nch+Nch Si MOSFET

auf Bestellung 3349 Stücke:

Lieferzeit 14-28 Tag (e)

30+	1.77 EUR
34+	1.53 EUR
100+	1.06 EUR
500+	0.89 EUR
1000+	0.75 EUR
3000+	0.68 EUR
6000+	0.63 EUR

Mindestbestellmenge: 30

QH8KA3TCR

MOSFET MOSFET

auf Bestellung 11488 Stücke:

Lieferzeit 14-28 Tag (e)

20+	2.6 EUR
27+	1.98 EUR
100+	1.65 EUR
500+	1.5 EUR
1000+	1.39 EUR
3000+	1.18 EUR
24000+	1.03 EUR

Mindestbestellmenge: 20

QH8KA3TCR

Description: MOSFET 2N-CH 30V 9A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 2950 Stücke:

Lieferzeit 21-28 Tag (e)

11+	2.44 EUR
13+	2 EUR
100+	1.56 EUR
500+	1.32 EUR
1000+	1.08 EUR

Mindestbestellmenge: 11

QH8KA3TCR

Description: ROHM - QH8KA3TCR - Dual-MOSFET, n-Kanal, 30 V, 30 V, 9 A, 9 A, 0.0123 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 9A
Dauer-Drainstrom Id, p-Kanal: 9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 9A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0123ohm
Verlustleistung, p-Kanal: 2.6W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: TSMT
Anzahl der Pins: 8Pins
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0123ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 2.6W
Betriebstemperatur, max.: 150°C

auf Bestellung 1766 Stücke:

Lieferzeit 14-21 Tag (e)

QH8KA3TCR

Description: MOSFET 2N-CH 30V 9A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

Produkt ist nicht verfügbar

QH8KA3TCR

Description: ROHM - QH8KA3TCR - Dual-MOSFET, n-Kanal, 30 V, 30 V, 9 A, 9 A, 0.0123 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 9A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0123ohm
Verlustleistung, p-Kanal: 2.6W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: TSMT
Anzahl der Pins: 8Pins
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0123ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 2.6W
Betriebstemperatur, max.: 150°C

auf Bestellung 1766 Stücke:

Lieferzeit 14-21 Tag (e)

QH8KA4TCR

MOSFET 30V Nch+Nch Si MOSFET

auf Bestellung 4563 Stücke:

Lieferzeit 14-28 Tag (e)

21+	2.49 EUR
28+	1.92 EUR
100+	1.55 EUR
500+	1.34 EUR
1000+	1.09 EUR
3000+	0.97 EUR

Mindestbestellmenge: 21

QH8KA4TCR

Description: MOSFET 2N-CH 30V 9A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 18392 Stücke:

Lieferzeit 21-28 Tag (e)

11+	2.44 EUR
14+	1.99 EUR
100+	1.55 EUR
500+	1.31 EUR
1000+	1.07 EUR

Mindestbestellmenge: 11

QH8KA4TCR

Description: ROHM - QH8KA4TCR - Dual-MOSFET, n-Kanal, 30 V, 30 V, 9 A, 9 A, 0.0125 ohm
tariffCode: 85412900
Wandlerpolarität: n-Kanal
Betriebstemperatur, max.: 150°C
productTraceability: No
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0125ohm
Anzahl der Pins: 8Pin(s)
Dauer-Drainstrom Id, p-Kanal: 9A
Dauer-Drainstrom Id, n-Kanal: 9A
MSL: MSL 1 - unbegrenzt
hazardous: false
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 4.5V
Produktpalette: -
Bauform - Transistor: TSMT
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
rohsCompliant: YES
Verlustleistung, n-Kanal: 1.5W
Drain-Source-Spannung Vds: 30V
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
Verlustleistung, p-Kanal: 1.5W
Drain-Source-Spannung Vds, n-Kanal: 30V
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0125ohm
Dauer-Drainstrom Id: 9A
rohsPhthalatesCompliant: YES
Betriebswiderstand, Rds(on): 0.0125ohm
usEccn: EAR99
Transistormontage: Oberflächenmontage
Verlustleistung Pd: 1.5W
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 2991 Stücke:

Lieferzeit 14-21 Tag (e)

QH8KA4TCR

Description: MOSFET 2N-CH 30V 9A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 15000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.01 EUR
6000+	0.96 EUR
9000+	0.91 EUR

Mindestbestellmenge: 3000

QH8KA4TCR

Description: ROHM - QH8KA4TCR - Dual-MOSFET, n-Kanal, 30 V, 30 V, 9 A, 9 A, 0.0125 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 9A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0125ohm
Verlustleistung, p-Kanal: 1.5W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0125ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.5W
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 2991 Stücke:

Lieferzeit 14-21 Tag (e)

QH8KA4TCR

Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 9A; Idm: 40A; 1.5W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 40A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

QH8KA4TCR

Produkt ist nicht verfügbar

QH8KB5TCR

Description: MOSFET 2N-CH 40V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

Produkt ist nicht verfügbar

QH8KB5TCR

MOSFET 40V N&N-CHANNEL

auf Bestellung 4017 Stücke:

Lieferzeit 14-28 Tag (e)

30+	1.74 EUR
35+	1.5 EUR
100+	1.04 EUR
500+	0.87 EUR
1000+	0.74 EUR
3000+	0.68 EUR
6000+	0.62 EUR

Mindestbestellmenge: 30

QH8KB5TCR

Description: MOSFET 2N-CH 40V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 1361 Stücke:

Lieferzeit 21-28 Tag (e)

15+	1.77 EUR
18+	1.53 EUR
100+	1.06 EUR
500+	0.89 EUR
1000+	0.75 EUR

Mindestbestellmenge: 15

QH8KB6TCR

Description: MOSFET 2N-CH 40V 8A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 5950 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.63 EUR
13+	2.14 EUR
100+	1.67 EUR
500+	1.41 EUR
1000+	1.15 EUR

Mindestbestellmenge: 10

QH8KB6TCR

MOSFET 40V N&N-CHANNEL

auf Bestellung 11350 Stücke:

Lieferzeit 14-28 Tag (e)

21+	2.56 EUR
25+	2.1 EUR
100+	1.64 EUR
500+	1.39 EUR
1000+	1.13 EUR
3000+	1.06 EUR
6000+	1.03 EUR

Mindestbestellmenge: 21

QH8KB6TCR

Description: MOSFET 2N-CH 40V 8A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.08 EUR

Mindestbestellmenge: 3000

QH8KC5TCR

Description: MOSFET 2N-CH 60V 3A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 2267 Stücke:

Lieferzeit 21-28 Tag (e)

14+	1.92 EUR
16+	1.66 EUR
100+	1.15 EUR
500+	0.96 EUR
1000+	0.82 EUR

Mindestbestellmenge: 14

QH8KC5TCR

Description: ROHM - QH8KC5TCR - Dual-MOSFET, n-Kanal, 60 V, 3 A, 0.07 ohm, TSMT, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60
Dauer-Drainstrom Id: 3
Dauer-Drainstrom Id, p-Kanal: 3
hazardous: false
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 60
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 3
Drain-Source-Durchgangswiderstand, p-Kanal: 0.07
Verlustleistung Pd: 1.5
Gate-Source-Schwellenspannung, max.: 2.5
Verlustleistung, p-Kanal: 1.5
Drain-Source-Spannung Vds, n-Kanal: 60
euEccn: NLR
Bauform - Transistor: TSMT
Anzahl der Pins: 8
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.07
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.5
Betriebswiderstand, Rds(on): 0.07
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 2915 Stücke:

Lieferzeit 14-21 Tag (e)

QH8KC5TCR

Description: MOSFET 2N-CH 60V 3A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

Produkt ist nicht verfügbar

QH8KC5TCR

MOSFET 60V N&N-CHANNEL

auf Bestellung 2226 Stücke:

Lieferzeit 14-28 Tag (e)

28+	1.88 EUR
32+	1.63 EUR
100+	1.13 EUR
500+	0.94 EUR
1000+	0.8 EUR
3000+	0.71 EUR
6000+	0.67 EUR

Mindestbestellmenge: 28

QH8KC6TCR

Description: MOSFET 2N-CH 60V 5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 308 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.86 EUR
12+	2.33 EUR
100+	1.82 EUR

Mindestbestellmenge: 10

QH8KC6TCR

MOSFET 40V N&P-CHANNEL

auf Bestellung 5520 Stücke:

Lieferzeit 14-28 Tag (e)

19+	2.81 EUR
23+	2.29 EUR
100+	1.78 EUR
500+	1.51 EUR
1000+	1.23 EUR
3000+	1.19 EUR
6000+	1.1 EUR

Mindestbestellmenge: 19

QH8KC6TCR

Description: MOSFET 2N-CH 60V 5.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

Produkt ist nicht verfügbar

QH8KC6TCR

Description: ROHM - QH8KC6TCR - Dual-MOSFET, n-Kanal, 60 V, 5.5 A, 0.023 ohm, TSMT, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60
Dauer-Drainstrom Id: 5.5
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 1.5
Bauform - Transistor: TSMT
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.023
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 2.5
SVHC: No SVHC (08-Jul-2021)

auf Bestellung 60 Stücke:

Lieferzeit 14-21 Tag (e)

QH8KE5TCR

MOSFET 100V 2.0A, Dual Nch+Nch, TSMT8, Power MOSFET: The Power MOSFET QH8KE5 is suitable for switching power supply and motor drive.

auf Bestellung 5990 Stücke:

Lieferzeit 14-28 Tag (e)

35+	1.52 EUR
39+	1.36 EUR
100+	0.93 EUR
500+	0.77 EUR
1000+	0.68 EUR
3000+	0.58 EUR
6000+	0.55 EUR

Mindestbestellmenge: 35

QH8M22TCR

Description: MOSFET N/P-CH 40V 4.5A/2A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 20V, 450pF @ 20V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, 9.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 10µA, 3V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 15000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.25 EUR
6000+	1.19 EUR
9000+	1.14 EUR

Mindestbestellmenge: 3000

QH8M22TCR

Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 4.5/2A; Idm: 18A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 4.5/2A
Pulsed drain current: 18A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 59/260mΩ
Mounting: SMD
Gate charge: 2.6/9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

QH8M22TCR

Produkt ist nicht verfügbar

QH8M22TCR

Description: MOSFET N/P-CH 40V 4.5A/2A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 20V, 450pF @ 20V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, 9.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 10µA, 3V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 20684 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.04 EUR
11+	2.48 EUR
100+	1.92 EUR
500+	1.63 EUR
1000+	1.33 EUR

Mindestbestellmenge: 9

QH8M22TCR

MOSFET QH8M22 is the high reliability transistor, suitable for switching applications. 40V Nch+Pch Power MOSFET.

auf Bestellung 26 Stücke:

Lieferzeit 14-28 Tag (e)

18+	2.96 EUR
22+	2.44 EUR
100+	1.89 EUR
500+	1.6 EUR
1000+	1.3 EUR
3000+	1.23 EUR
6000+	1.17 EUR

Mindestbestellmenge: 18

QH8MA2TCR

Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4.5/3A; Idm: 12A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4.5/3A
Pulsed drain current: 12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 56/115mΩ
Mounting: SMD
Gate charge: 7.8/8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

QH8MA2TCR

Produkt ist nicht verfügbar

QH8MA2TCR

Description: MOSFET N/P-CH 30V 4.5A/3A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 1750 Stücke:

Lieferzeit 21-28 Tag (e)

19+	1.4 EUR
22+	1.23 EUR
100+	0.95 EUR
500+	0.75 EUR
1000+	0.6 EUR

Mindestbestellmenge: 19

QH8MA2TCR

MOSFET 30V Nch+Pch Power MOSFET

auf Bestellung 2920 Stücke:

Lieferzeit 14-28 Tag (e)

38+	1.38 EUR
46+	1.13 EUR
100+	0.82 EUR
500+	0.69 EUR
1000+	0.59 EUR
3000+	0.53 EUR
6000+	0.49 EUR

Mindestbestellmenge: 38

QH8MA2TCR

Description: MOSFET N/P-CH 30V 4.5A/3A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

Produkt ist nicht verfügbar

QH8MA3TCR

Description: ROHM - QH8MA3TCR - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 7 A, 7 A, 0.022 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 7A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.022ohm
Verlustleistung, p-Kanal: 2.5W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: TSMT
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.022ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 2.5W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 5442 Stücke:

Lieferzeit 14-21 Tag (e)

QH8MA3TCR

Trans MOSFET N/P-CH 30V 7A/5.5A 8-Pin TSMT T/R

auf Bestellung 2959 Stücke:

Lieferzeit 14-21 Tag (e)

233+	0.67 EUR
250+	0.62 EUR
500+	0.58 EUR
1000+	0.54 EUR
2500+	0.5 EUR

Mindestbestellmenge: 233

QH8MA3TCR

Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

Produkt ist nicht verfügbar

QH8MA3TCR

auf Bestellung 5442 Stücke:

Lieferzeit 14-21 Tag (e)

QH8MA3TCR

Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7/5.5A; Idm: 18A; 2.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7/5.5A
Pulsed drain current: 18A
Power dissipation: 2.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 46/72mΩ
Mounting: SMD
Gate charge: 7.2/10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

QH8MA3TCR

Produkt ist nicht verfügbar

QH8MA3TCR

Trans MOSFET N/P-CH 30V 7A/5.5A 8-Pin TSMT T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

233+	0.67 EUR
250+	0.62 EUR
500+	0.58 EUR
1000+	0.54 EUR
2500+	0.5 EUR

Mindestbestellmenge: 233

QH8MA3TCR

MOSFET 30V N+P Ch MOSFET

auf Bestellung 6152 Stücke:

Lieferzeit 14-28 Tag (e)

30+	1.79 EUR
33+	1.59 EUR
100+	1.09 EUR
500+	0.91 EUR
1000+	0.77 EUR
3000+	0.7 EUR
6000+	0.65 EUR

Mindestbestellmenge: 30

QH8MA3TCR

Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

Produkt ist nicht verfügbar

QH8MA4TCR

Description: MOSFET N/P-CH 30V 9A/8A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 3510 Stücke:

Lieferzeit 21-28 Tag (e)

13+	2.16 EUR
14+	1.91 EUR
100+	1.49 EUR
500+	1.23 EUR
1000+	0.97 EUR

Mindestbestellmenge: 13

QH8MA4TCR

Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 9/8A; Idm: 18A; 2.6W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 9/8A
Pulsed drain current: 18A
Power dissipation: 2.6W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 23.7/40.3mΩ
Mounting: SMD
Gate charge: 15.5/19.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

QH8MA4TCR

Produkt ist nicht verfügbar

QH8MA4TCR

MOSFET Zener Diode, 100mW, 2 Pin.

auf Bestellung 2326 Stücke:

Lieferzeit 14-28 Tag (e)

25+	2.08 EUR
31+	1.71 EUR
100+	1.33 EUR
500+	1.13 EUR
1000+	0.92 EUR
3000+	0.87 EUR
6000+	0.82 EUR

Mindestbestellmenge: 25

QH8MA4TCR

Description: MOSFET N/P-CH 30V 9A/8A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.91 EUR

Mindestbestellmenge: 3000

QH8MB5TCR

MOSFET 40V N&P-CHANNEL

auf Bestellung 4180 Stücke:

Lieferzeit 14-28 Tag (e)

24+	2.25 EUR
27+	1.94 EUR
100+	1.35 EUR
500+	1.13 EUR
1000+	0.96 EUR
3000+	0.85 EUR

Mindestbestellmenge: 24

QH8MB5TCR

Description: MOSFET N/P-CH 40V 4.5A/5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 5131 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.29 EUR
14+	1.98 EUR
100+	1.37 EUR
500+	1.15 EUR
1000+	0.98 EUR

Mindestbestellmenge: 12

QH8MB5TCR

Trans MOSFET N/P-CH 40V 4.5A/5A 8-Pin TSMT T/R

auf Bestellung 2750 Stücke:

Lieferzeit 14-21 Tag (e)

171+	0.92 EUR
500+	0.73 EUR

Mindestbestellmenge: 171

QH8MB5TCR

Description: ROHM - QH8MB5TCR - Dual-MOSFET, n- und p-Kanal, 40 V, 40 V, 4.5 A, 4.5 A, 0.034 ohm
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40
rohsCompliant: YES
Dauer-Drainstrom Id: 4.5
Dauer-Drainstrom Id, p-Kanal: 4.5
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 40
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 4.5
Drain-Source-Durchgangswiderstand, p-Kanal: 0.034
Verlustleistung Pd: 1.5
Gate-Source-Schwellenspannung, max.: 2.5
Verlustleistung, p-Kanal: 1.5
Drain-Source-Spannung Vds, n-Kanal: 40
euEccn: NLR
Bauform - Transistor: TSMT
Anzahl der Pins: 8
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.034
productTraceability: No
Wandlerpolarität: n- und p-Kanal
Kanaltyp: n- und p-Kanal
Verlustleistung, n-Kanal: 1.5
Betriebswiderstand, Rds(on): 0.034
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 2991 Stücke:

Lieferzeit 14-21 Tag (e)

QH8MB5TCR

Description: MOSFET N/P-CH 40V 4.5A/5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.87 EUR

Mindestbestellmenge: 3000

QH8MB5TCR

Trans MOSFET N/P-CH 40V 4.5A/5A 8-Pin TSMT T/R

auf Bestellung 100 Stücke:

Lieferzeit 14-21 Tag (e)

QH8MC5TCR

Description: ROHM - QH8MC5TCR - Dual-MOSFET, n- und p-Kanal, 60 V, 60 V, 3 A, 3 A, 0.07 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 3A
Dauer-Drainstrom Id, p-Kanal: 3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 3A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.07ohm
Verlustleistung, p-Kanal: 1.5W
euEccn: NLR
Bauform - Transistor: TSMT
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.07ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n- und p-Kanal
Verlustleistung, n-Kanal: 1.5W
Betriebstemperatur, max.: 150°C

auf Bestellung 2940 Stücke:

Lieferzeit 14-21 Tag (e)

QH8MC5TCR

Description: MOSFET N/P-CH 60V 3A/3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active

auf Bestellung 9054 Stücke:

Lieferzeit 21-28 Tag (e)

13+	2.11 EUR
16+	1.73 EUR
100+	1.34 EUR
500+	1.14 EUR
1000+	0.93 EUR

Mindestbestellmenge: 13

QH8MC5TCR

MOSFET 60V 3.0A/3.5A, Dual Nch+Pch, TSMT8, Small Signal MOSFET

auf Bestellung 33742 Stücke:

Lieferzeit 14-28 Tag (e)

25+	2.13 EUR
30+	1.74 EUR
100+	1.35 EUR
500+	1.15 EUR
1000+	0.94 EUR
3000+	0.88 EUR
6000+	0.86 EUR

Mindestbestellmenge: 25

QH8MC5TCR