Produkte > QH8
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||
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| QH8-0093 | QFP208 | auf Bestellung 89 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| QH8-0221-030 | auf Bestellung 58 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| QH8-0925/M66417-0011FP | auf Bestellung 21 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| QH8-1253-04 | auf Bestellung 82 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| QH8-80409/1111F024 | auf Bestellung 37 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| QH8-8331 | DIP32 | auf Bestellung 89 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| QH8-8350 | PQ100 | auf Bestellung 89 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| QH8-8409 | TOSH | QFP100 | auf Bestellung 66 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8-8516 | auf Bestellung 21 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| QH8-8516 | QFP144 | auf Bestellung 90 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| QH8-8548 | auf Bestellung 137 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| QH8-8648-01 | FUJ | auf Bestellung 81 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| QH8-8796 | auf Bestellung 491 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| QH8-8911 | auf Bestellung 128 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| QH8-8911 | 96 | auf Bestellung 128 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| QH8-9002-03 | auf Bestellung 486 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| QH8-900203 | CANON | auf Bestellung 34 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| QH8-9016-01 | CANON | auf Bestellung 247 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| QH800 | auf Bestellung 2765 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| QH81257 | auf Bestellung 470 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| QH8JA1TCR | Rohm Semiconductor | Description: MOSFET 2P-CH 20V 5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 1959 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8JA1TCR | ROHM | Description: ROHM - QH8JA1TCR - Dual-MOSFET, p-Kanal, 20 V, 20 V, 5 A, 5 A, 0.028 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 5A Dauer-Drainstrom Id, p-Kanal: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.028ohm Verlustleistung, p-Kanal: 1.1W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: TSMT Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.028ohm productTraceability: No Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 1.1W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8JA1TCR | Rohm Semiconductor | Description: MOSFET 2P-CH 20V 5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8JA1TCR | ROHM SEMICONDUCTOR | QH8JA1TCR Multi channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8JA1TCR | ROHM Semiconductor | MOSFET 20V Pch+Pch Si MOSFET | auf Bestellung 2743 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8JA1TCR | ROHM | Description: ROHM - QH8JA1TCR - Dual-MOSFET, p-Kanal, 20 V, 20 V, 5 A, 5 A, 0.028 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.028ohm Verlustleistung, p-Kanal: 1.1W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: TSMT Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.028ohm productTraceability: No Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 1.1W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8JB5TCR | ROHM SEMICONDUCTOR | QH8JB5TCR Multi channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8JB5TCR | Rohm Semiconductor | Description: MOSFET 2P-CH 40V 5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 3339 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8JB5TCR | ROHM Semiconductor | MOSFETs -40V Dual Pch+Pch Small Signal MOSFET | auf Bestellung 5713 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8JB5TCR | ROHM | Description: ROHM - QH8JB5TCR - Dual-MOSFET, p-Kanal, 40 V, 40 V, 5 A, 5 A, 0.033 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm Verlustleistung, p-Kanal: 1.5W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: TSMT Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 1.5W Betriebstemperatur, max.: 150°C | auf Bestellung 8565 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8JB5TCR | Rohm Semiconductor | Description: MOSFET 2P-CH 40V 5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8JB5TCR | ROHM | Description: ROHM - QH8JB5TCR - Dual-MOSFET, p-Kanal, 40 V, 40 V, 5 A, 5 A, 0.033 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 5A Dauer-Drainstrom Id, p-Kanal: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm Verlustleistung, p-Kanal: 1.5W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: TSMT Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 1.5W Betriebstemperatur, max.: 150°C | auf Bestellung 8565 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8JC5TCR | Rohm Semiconductor | Description: MOSFET 2P-CH 60V 3.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8JC5TCR | ROHM SEMICONDUCTOR | QH8JC5TCR Multi channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8JC5TCR | Rohm Semiconductor | Description: MOSFET 2P-CH 60V 3.5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8JC5TCR | ROHM Semiconductor | MOSFETs -60V Dual Pch+Pch Small Signal MOSFET | auf Bestellung 9892 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8JE5TCR | ROHM Semiconductor | MOSFETs 100V Dual Pch+Pch, TSMT8, Power MOSFET | auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8K22TCR | ROHM Semiconductor | MOSFET QH8K22 is low on - resistance MOSFET for Switching. 40V Nch+Nch Small Signal MOSFET. | auf Bestellung 2407 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8K22TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 40V 6.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 20V Rds On (Max) @ Id, Vgs: 46mOhm @ 6.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 10µA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 13071 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8K22TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 40V 6.5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 20V Rds On (Max) @ Id, Vgs: 46mOhm @ 6.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 10µA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8K26TR | Rohm Semiconductor | Description: MOSFET 2N-CH 40V 7A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8K26TR | ROHM SEMICONDUCTOR | QH8K26TR Multi channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8K26TR | ROHM Semiconductor | MOSFET QH8K26 is low on-resistance and Small Surface Mount Package MOSFET for switching and motor drive. | auf Bestellung 2405 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8K26TR | Rohm Semiconductor | Description: MOSFET 2N-CH 40V 7A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 1698 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8K51TR | ROHM | Description: ROHM - QH8K51TR - Dual-MOSFET, Zweifach n-Kanal, 100 V, 2 A, 0.24 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 2A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: TSMT Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.24ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 1.5W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 2670 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8K51TR | ROHM Semiconductor | MOSFETs QH8K51 is the low on - resistance MOSFET for switching application. 100V Nch+Nch Small Signal MOSFET. | auf Bestellung 5864 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8K51TR | Rohm Semiconductor | Description: MOSFET 2N-CH 100V 2A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 16760 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8K51TR | Rohm Semiconductor | Description: MOSFET 2N-CH 100V 2A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8KA1TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 4.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Power - Max: 2.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V Rds On (Max) @ Id, Vgs: 73mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 2487 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8KA1TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 4.5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Power - Max: 2.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V Rds On (Max) @ Id, Vgs: 73mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8KA1TCR | ROHM Semiconductor | MOSFET 30V Nch+Nch Si MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8KA2TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 4.5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8KA2TCR | ROHM Semiconductor | MOSFET 30V Nch+Nch Si MOSFET | auf Bestellung 3349 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8KA2TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 4.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 1886 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8KA2TCR | ROHM SEMICONDUCTOR | QH8KA2TCR Multi channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8KA2TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 4.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 2800 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8KA3TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 9A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 2305 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8KA3TCR | ROHM Semiconductor | MOSFET MOSFET | auf Bestellung 11488 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8KA3TCR | ROHM | Description: ROHM - QH8KA3TCR - Dual-MOSFET, n-Kanal, 30 V, 30 V, 9 A, 9 A, 0.0123 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 9A Dauer-Drainstrom Id, p-Kanal: 9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 9A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0123ohm Verlustleistung, p-Kanal: 2.6W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: TSMT Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0123ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2.6W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1766 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8KA3TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 9A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8KA3TCR | ROHM | Description: ROHM - QH8KA3TCR - Dual-MOSFET, n-Kanal, 30 V, 30 V, 9 A, 9 A, 0.0123 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 9A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0123ohm Verlustleistung, p-Kanal: 2.6W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: TSMT Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0123ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2.6W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1766 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8KA4TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 9A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8KA4TCR | ROHM SEMICONDUCTOR | QH8KA4TCR Multi channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8KA4TCR | ROHM | Description: ROHM - QH8KA4TCR - Dual-MOSFET, n-Kanal, 30 V, 30 V, 9 A, 9 A, 0.0125 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 9A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0125ohm Verlustleistung, p-Kanal: 1.5W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Drain-Source-Durchgangswiderstand, n-Kanal: 0.0125ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.5W SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2991 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8KA4TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 9A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 3344 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8KA4TCR | ROHM Semiconductor | MOSFETs 30V Nch+Nch Si MOSFET | auf Bestellung 4473 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8KA4TCR | ROHM | Description: ROHM - QH8KA4TCR - Dual-MOSFET, n-Kanal, 30 V, 30 V, 9 A, 9 A, 0.0125 ohm tariffCode: 85412900 Wandlerpolarität: n-Kanal Betriebstemperatur, max.: 150°C productTraceability: No Drain-Source-Durchgangswiderstand, p-Kanal: 0.0125ohm Anzahl der Pins: 8Pin(s) Dauer-Drainstrom Id, p-Kanal: 9A Dauer-Drainstrom Id, n-Kanal: 9A MSL: MSL 1 - unbegrenzt hazardous: false Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Produktpalette: - Bauform - Transistor: TSMT Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR rohsCompliant: YES Verlustleistung, n-Kanal: 1.5W Drain-Source-Spannung Vds: 30V Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V Verlustleistung, p-Kanal: 1.5W Drain-Source-Spannung Vds, n-Kanal: 30V Drain-Source-Durchgangswiderstand, n-Kanal: 0.0125ohm Dauer-Drainstrom Id: 9A rohsPhthalatesCompliant: YES Betriebswiderstand, Rds(on): 0.0125ohm usEccn: EAR99 Transistormontage: Oberflächenmontage Verlustleistung Pd: 1.5W SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2991 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8KB5TCR | ROHM Semiconductor | MOSFET 40V N&N-CHANNEL | auf Bestellung 4017 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8KB5TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 40V 4.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 3028 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8KB5TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 40V 4.5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8KB6TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 40V 8A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8KB6TCR | ROHM | Description: ROHM - QH8KB6TCR - Dual-MOSFET, n-Kanal, 40 V, 40 V, 8 A, 8 A, 0.0137 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0137ohm Verlustleistung, p-Kanal: 1.5W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: TSMT Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0137ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.5W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2456 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8KB6TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 40V 8A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 5950 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8KB6TCR | ROHM Semiconductor | MOSFET 40V N&N-CHANNEL | auf Bestellung 11350 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8KC5TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 60V 3A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8KC5TCR | ROHM Semiconductor | MOSFET 60V N&N-CHANNEL | auf Bestellung 2226 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8KC5TCR | ROHM | Description: ROHM - QH8KC5TCR - Dual-MOSFET, n-Kanal, 60 V, 3 A, 0.07 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60 Dauer-Drainstrom Id: 3 Dauer-Drainstrom Id, p-Kanal: 3 hazardous: false Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60 usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3 Drain-Source-Durchgangswiderstand, p-Kanal: 0.07 Verlustleistung Pd: 1.5 Gate-Source-Schwellenspannung, max.: 2.5 Verlustleistung, p-Kanal: 1.5 Drain-Source-Spannung Vds, n-Kanal: 60 euEccn: NLR Bauform - Transistor: TSMT Anzahl der Pins: 8 Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.07 productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.5 Betriebswiderstand, Rds(on): 0.07 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 SVHC: No SVHC (10-Jun-2022) | auf Bestellung 2915 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8KC5TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 60V 3A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 137 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8KC6TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 60V 5.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 2497 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8KC6TCR | ROHM Semiconductor | MOSFETs TSMT8 N CHAN 60V | auf Bestellung 4995 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8KC6TCR | ROHM | Description: ROHM - QH8KC6TCR - Dual-MOSFET, n-Kanal, 60 V, 5.5 A, 0.023 ohm, TSMT, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60 Dauer-Drainstrom Id: 5.5 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 1.5 Bauform - Transistor: TSMT Anzahl der Pins: 8 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.023 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 2.5 SVHC: No SVHC (08-Jul-2021) | auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8KC6TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 60V 5.5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8KE5TCR | ROHM Semiconductor | MOSFET 100V 2.0A, Dual Nch+Nch, TSMT8, Power MOSFET: The Power MOSFET QH8KE5 is suitable for switching power supply and motor drive. | auf Bestellung 5990 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8M22TCR | ROHM SEMICONDUCTOR | QH8M22TCR Multi channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8M22TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 40V 4.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 20V, 450pF @ 20V Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, 9.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 10µA, 3V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 9928 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8M22TCR | ROHM Semiconductor | MOSFET QH8M22 is the high reliability transistor, suitable for switching applications. 40V Nch+Pch Power MOSFET. | auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8M22TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 40V 4.5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 20V, 450pF @ 20V Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, 9.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 10µA, 3V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MA2TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 4.5A/3A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8MA2TCR | ROHM SEMICONDUCTOR | QH8MA2TCR Multi channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8MA2TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 4.5A/3A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 1269 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MA2TCR | ROHM Semiconductor | MOSFET 30V Nch+Pch Power MOSFET | auf Bestellung 2920 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MA3TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 30V 7A/5.5A 8-Pin TSMT T/R | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8MA3TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MA3TCR | ROHM SEMICONDUCTOR | QH8MA3TCR Multi channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8MA3TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 30V 7A/5.5A 8-Pin TSMT T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| QH8MA3TCR | ROHM Semiconductor | MOSFETs 30V N+P Ch MOSFET | auf Bestellung 6000 Stücke: Lieferzeit 62-66 Tag (e) |
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| QH8MA3TCR | ROHM | Description: ROHM - QH8MA3TCR - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 7 A, 7 A, 0.022 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.022ohm Verlustleistung, p-Kanal: 2.5W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: TSMT Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.022ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 2.5W Betriebstemperatur, max.: 150°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 5442 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8MA3TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MA3TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 30V 7A/5.5A 8-Pin TSMT T/R | auf Bestellung 2959 Stücke: Lieferzeit 14-21 Tag (e) |
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| QH8MA3TCR | ROHM | Description: ROHM - QH8MA3TCR - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 7 A, 7 A, 0.022 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.022ohm Verlustleistung, p-Kanal: 2.5W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: TSMT Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.022ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 2.5W Betriebstemperatur, max.: 150°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 5442 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8MA4TCR | ROHM Semiconductor | MOSFET Zener Diode, 100mW, 2 Pin. | auf Bestellung 2326 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MA4TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 9A/8A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 8A Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8MA4TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 9A/8A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 8A Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 2838 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MA4TCR | ROHM SEMICONDUCTOR | QH8MA4TCR Multi channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8MB5TCR | ROHM | Description: ROHM - QH8MB5TCR - Dual-MOSFET, n- und p-Kanal, 40 V, 40 V, 4.5 A, 4.5 A, 0.034 ohm tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40 rohsCompliant: YES Dauer-Drainstrom Id: 4.5 Dauer-Drainstrom Id, p-Kanal: 4.5 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40 usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 4.5 Drain-Source-Durchgangswiderstand, p-Kanal: 0.034 Verlustleistung Pd: 1.5 Gate-Source-Schwellenspannung, max.: 2.5 Verlustleistung, p-Kanal: 1.5 Drain-Source-Spannung Vds, n-Kanal: 40 euEccn: NLR Bauform - Transistor: TSMT Anzahl der Pins: 8 Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.034 productTraceability: No Wandlerpolarität: n- und p-Kanal Kanaltyp: n- und p-Kanal Verlustleistung, n-Kanal: 1.5 Betriebswiderstand, Rds(on): 0.034 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2991 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8MB5TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 40V 4.5A/5A 8-Pin TSMT T/R | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8MB5TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 40V 4.5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MB5TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 40V 4.5A/5A 8-Pin TSMT T/R | auf Bestellung 2750 Stücke: Lieferzeit 14-21 Tag (e) |
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| QH8MB5TCR | ROHM Semiconductor | MOSFET 40V N&P-CHANNEL | auf Bestellung 4180 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MB5TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 40V 4.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 5456 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MC5TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 60V 3A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 7182 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MC5TCR | ROHM Semiconductor | MOSFETs 60V 3.0A-3.5A, Dual Nch+Pch, TSMT8, Small Signal MOSFET | auf Bestellung 33258 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MC5TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 60V 3A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MC5TCR | ROHM | Description: ROHM - QH8MC5TCR - Dual-MOSFET, n- und p-Kanal, 60 V, 60 V, 3 A, 3 A, 0.07 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 3A Dauer-Drainstrom Id, p-Kanal: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.07ohm Verlustleistung, p-Kanal: 1.5W euEccn: NLR Bauform - Transistor: TSMT Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.07ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n- und p-Kanal Verlustleistung, n-Kanal: 1.5W Betriebstemperatur, max.: 150°C | auf Bestellung 2940 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH |