Foto | Bezeichnung | Hersteller | Beschreibung |
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BS270-D74Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 400mA; Idm: 2A; 0.625W; TO92 Mounting: THT Power dissipation: 0.625W Case: TO92 Kind of package: Ammo Pack Technology: DMOS Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 2A Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.4A On-state resistance: 3.5Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BSP16T1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4 Mounting: SMD Frequency: 15MHz Collector-emitter voltage: 300V Current gain: 30...120 Collector current: 0.1A Type of transistor: PNP Power dissipation: 1.5W Polarisation: bipolar Kind of package: reel; tape Case: SOT223-4; TO261-4 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2258 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP52T1G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSP52T3G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSR14 | ONSEMI |
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auf Bestellung 4041 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR16 | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.8A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 207 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR57 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 20mA; 0.25W; SOT23; Igt: 50mA Gate current: 50mA Drain current: 20mA On-state resistance: 40Ω Type of transistor: N-JFET Power dissipation: 0.25W Polarisation: unipolar Kind of package: reel; tape Gate-source voltage: -40V Mounting: SMD Case: SOT23 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2775 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR58 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 8mA Case: SOT23 Gate-source voltage: -40V On-state resistance: 60Ω Mounting: SMD Kind of package: reel; tape Power dissipation: 0.25W Gate current: 50mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1920 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 12Ω Type of transistor: N-MOSFET Power dissipation: 0.36W Polarisation: unipolar Features of semiconductor devices: logic level Gate charge: 2.5nC Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19267 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123L | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 12Ω Type of transistor: N-MOSFET Power dissipation: 0.36W Polarisation: unipolar Features of semiconductor devices: logic level Gate charge: 2.5nC Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9463 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123LT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 0.225W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 12753 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123W | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 10Ω Type of transistor: N-MOSFET Power dissipation: 0.2W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 0.68A Anzahl je Verpackung: 5 Stücke |
auf Bestellung 1995 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138-G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.7nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2550 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.7nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSS138K | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 2.4nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BSS138L | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5305 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138LT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 13344 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138LT3G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138W | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.21A Power dissipation: 0.34W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 5.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 209 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS63LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 100V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 95MHz Current gain: 30 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BSS64LT1G | ONSEMI |
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auf Bestellung 2480 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.36W; SOT23 Type of transistor: P-MOSFET Case: SOT23 Drain-source voltage: -50V Drain current: -130mA On-state resistance: 17Ω Power dissipation: 0.36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.3nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6247 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84LT1G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23 Type of transistor: P-MOSFET Case: SOT23 Drain-source voltage: -50V Drain current: -130mA On-state resistance: 10Ω Power dissipation: 0.225W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.2nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4497 Stücke: Lieferzeit 7-14 Tag (e) |
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BSV52LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 12V; 0.1A; 0.225W; SOT23,TO236AB Kind of package: reel; tape Mounting: SMD Case: SOT23; TO236AB Frequency: 400MHz Collector-emitter voltage: 12V Current gain: 40...120 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.225W Polarisation: bipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 169 Stücke: Lieferzeit 7-14 Tag (e) |
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BU406G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 200V; 7A; 60W; TO220AB Case: TO220AB Kind of package: tube Mounting: THT Frequency: 10MHz Collector-emitter voltage: 200V Collector current: 7A Type of transistor: NPN Power dissipation: 60W Polarisation: bipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 275 Stücke: Lieferzeit 7-14 Tag (e) |
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BUB323ZT4G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BUL45D2G | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 400V; 5A; 75W; TO220AB; 1.15÷1.39mm Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 5A Power dissipation: 75W Case: TO220AB Current gain: 7...34 Mounting: THT Kind of package: tube Frequency: 13MHz Heatsink thickness: 1.15...1.39mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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BUT11AFTU | ONSEMI |
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auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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BUV21G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 250V; 40A; 250W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 40A Power dissipation: 250W Case: TO3 Mounting: THT Kind of package: in-tray Anzahl je Verpackung: 1 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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BUX85G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 1kV; 2A; 40W; TO220AB Mounting: THT Case: TO220AB Collector-emitter voltage: 1kV Collector current: 2A Type of transistor: NPN Power dissipation: 40W Polarisation: bipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 238 Stücke: Lieferzeit 7-14 Tag (e) |
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BUZ11-NR4941 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 30A Power dissipation: 75W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 810 Stücke: Lieferzeit 7-14 Tag (e) |
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BVSS123LT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 0.225W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1865 Stücke: Lieferzeit 7-14 Tag (e) |
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BVSS138LT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BVSS84LT1G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: -50V Drain current: -130mA On-state resistance: 10Ω Type of transistor: P-MOSFET Power dissipation: 0.225W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3152 Stücke: Lieferzeit 7-14 Tag (e) |
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BYV32-200G | ONSEMI |
![]() Description: Diode: switching; THT; 200V; 16A; tube; Ifsm: 100A; TO220AB; Ir: 600uA Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 16A Semiconductor structure: common cathode; double Kind of package: tube Max. forward impulse current: 100A Case: TO220AB Max. forward voltage: 1.15V Leakage current: 0.6mA Reverse recovery time: 35ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BYW29-200G | ONSEMI |
![]() ![]() Description: Diode: switching; THT; 200V; 8A; tube; TO220AC; 1.14÷1.39mm Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Kind of package: tube Case: TO220AC Heatsink thickness: 1.14...1.39mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1716 Stücke: Lieferzeit 7-14 Tag (e) |
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BYW51-200G | ONSEMI |
![]() Description: Diode: switching; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: TO220AB Max. load current: 16A Max. forward impulse current: 100A Kind of package: tube Heatsink thickness: 1.15...1.39mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 211 Stücke: Lieferzeit 7-14 Tag (e) |
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BYW80-200G | ONSEMI |
![]() ![]() Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. load current: 16A Heatsink thickness: 1.15...1.39mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1458 Stücke: Lieferzeit 7-14 Tag (e) |
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BZG03C150G | ONSEMI |
![]() Description: Diode: Zener; 1.5W; 150V; SMD; reel,tape; SMA; single diode; 1uA Type of diode: Zener Power dissipation: 1.5W Zener voltage: 150V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: BZG03C Leakage current: 1µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 572 Stücke: Lieferzeit 7-14 Tag (e) |
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BZX79C10 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 10V; bulk; CASE017AG; single diode; 0.2uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.2µA Manufacturer series: BZX79C Anzahl je Verpackung: 1 Stücke |
auf Bestellung 363 Stücke: Lieferzeit 7-14 Tag (e) |
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BZX79C11 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 11V; bulk; CASE017AG; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: BZX79C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX79C12 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: BZX79C Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3139 Stücke: Lieferzeit 7-14 Tag (e) |
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BZX79C15 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 15V; bulk; CASE017AG; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX79C Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2972 Stücke: Lieferzeit 7-14 Tag (e) |
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BZX79C2V4 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 100uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.4V Mounting: THT Tolerance: ±5% Kind of package: bulk Case: CASE017AG Semiconductor structure: single diode Manufacturer series: BZX79C Leakage current: 0.1mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2309 Stücke: Lieferzeit 7-14 Tag (e) |
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BZX79C2V7 | ONSEMI |
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auf Bestellung 2650 Stücke: Lieferzeit 7-14 Tag (e) |
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BZX79C3V3 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 3.3V; bulk; CASE017AG; single diode; 25uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 25µA Manufacturer series: BZX79C Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2888 Stücke: Lieferzeit 7-14 Tag (e) |
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BZX79C3V6 | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BZX79C3V9 | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BZX79C4V3 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 4.3V; bulk; CASE017AG; single diode; 5uA; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: BZX79C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX79C4V7 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 4.7V; bulk; CASE017AG; single diode; 3uA; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Mounting: THT Tolerance: ±5% Kind of package: bulk Case: CASE017AG Semiconductor structure: single diode Manufacturer series: BZX79C Leakage current: 3µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1654 Stücke: Lieferzeit 7-14 Tag (e) |
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BZX79C5V1 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 5.1V; bulk; CASE017AG; single diode; 2uA; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 2µA Manufacturer series: BZX79C Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1632 Stücke: Lieferzeit 7-14 Tag (e) |
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BZX79C5V6 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; 1uA; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: BZX79C Anzahl je Verpackung: 1 Stücke |
auf Bestellung 962 Stücke: Lieferzeit 7-14 Tag (e) |
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BZX79C6V2 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 6.2V; bulk; CASE017AG; single diode; 3uA; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 3µA Manufacturer series: BZX79C Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3806 Stücke: Lieferzeit 7-14 Tag (e) |
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BZX79C6V8 | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BZX79C8V2 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 8.2V; bulk; CASE017AG; single diode; 0.7uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: THT Tolerance: ±5% Kind of package: bulk Case: CASE017AG Semiconductor structure: single diode Manufacturer series: BZX79C Leakage current: 0.7µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1887 Stücke: Lieferzeit 7-14 Tag (e) |
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BZX79C9V1 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 9.1V; bulk; CASE017AG; single diode; 0.5uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Mounting: THT Tolerance: ±5% Kind of package: bulk Case: CASE017AG Semiconductor structure: single diode Manufacturer series: BZX79C Leakage current: 0.5µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2101 Stücke: Lieferzeit 7-14 Tag (e) |
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BZX84B10LT1G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BZX84B12LT1G | ONSEMI |
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auf Bestellung 464 Stücke: Lieferzeit 7-14 Tag (e) |
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BZX84B15LT1G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BZX84B16LT1G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
BS270-D74Z |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 400mA; Idm: 2A; 0.625W; TO92
Mounting: THT
Power dissipation: 0.625W
Case: TO92
Kind of package: Ammo Pack
Technology: DMOS
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 2A
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
On-state resistance: 3.5Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 400mA; Idm: 2A; 0.625W; TO92
Mounting: THT
Power dissipation: 0.625W
Case: TO92
Kind of package: Ammo Pack
Technology: DMOS
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 2A
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
On-state resistance: 3.5Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP16T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4
Mounting: SMD
Frequency: 15MHz
Collector-emitter voltage: 300V
Current gain: 30...120
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 1.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4
Mounting: SMD
Frequency: 15MHz
Collector-emitter voltage: 300V
Current gain: 30...120
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 1.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2258 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
114+ | 0.63 EUR |
176+ | 0.41 EUR |
348+ | 0.21 EUR |
365+ | 0.20 EUR |
2000+ | 0.19 EUR |
BSP52T1G | ![]() |
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Hersteller: ONSEMI
BSP52T1G NPN SMD Darlington transistors
BSP52T1G NPN SMD Darlington transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP52T3G |
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Hersteller: ONSEMI
BSP52T3G NPN SMD Darlington transistors
BSP52T3G NPN SMD Darlington transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSR14 |
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Hersteller: ONSEMI
BSR14-FAI NPN SMD transistors
BSR14-FAI NPN SMD transistors
auf Bestellung 4041 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
178+ | 0.40 EUR |
575+ | 0.12 EUR |
BSR16 |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 207 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
122+ | 0.59 EUR |
191+ | 0.37 EUR |
207+ | 0.34 EUR |
342+ | 0.21 EUR |
1500+ | 0.12 EUR |
BSR57 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.25W; SOT23; Igt: 50mA
Gate current: 50mA
Drain current: 20mA
On-state resistance: 40Ω
Type of transistor: N-JFET
Power dissipation: 0.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -40V
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.25W; SOT23; Igt: 50mA
Gate current: 50mA
Drain current: 20mA
On-state resistance: 40Ω
Type of transistor: N-JFET
Power dissipation: 0.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -40V
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2775 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
310+ | 0.23 EUR |
345+ | 0.21 EUR |
390+ | 0.18 EUR |
450+ | 0.16 EUR |
475+ | 0.15 EUR |
BSR58 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 8mA
Case: SOT23
Gate-source voltage: -40V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.25W
Gate current: 50mA
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 8mA
Case: SOT23
Gate-source voltage: -40V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.25W
Gate current: 50mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1920 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
137+ | 0.52 EUR |
226+ | 0.32 EUR |
562+ | 0.13 EUR |
596+ | 0.12 EUR |
BSS123 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 2.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 2.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19267 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
253+ | 0.28 EUR |
368+ | 0.19 EUR |
444+ | 0.16 EUR |
1421+ | 0.05 EUR |
1502+ | 0.05 EUR |
BSS123L |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 2.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 2.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9463 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
556+ | 0.13 EUR |
754+ | 0.10 EUR |
855+ | 0.08 EUR |
1397+ | 0.05 EUR |
1480+ | 0.05 EUR |
3000+ | 0.05 EUR |
BSS123LT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12753 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
407+ | 0.18 EUR |
551+ | 0.13 EUR |
599+ | 0.12 EUR |
1588+ | 0.05 EUR |
1684+ | 0.04 EUR |
BSS123W |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.68A
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.68A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1995 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
360+ | 0.20 EUR |
530+ | 0.14 EUR |
600+ | 0.12 EUR |
670+ | 0.11 EUR |
710+ | 0.10 EUR |
BSS138-G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2550 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
603+ | 0.12 EUR |
650+ | 0.11 EUR |
794+ | 0.09 EUR |
834+ | 0.09 EUR |
3000+ | 0.08 EUR |
BSS138 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS138K |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.4nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.4nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS138L |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5305 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.20 EUR |
428+ | 0.17 EUR |
662+ | 0.11 EUR |
1099+ | 0.07 EUR |
1819+ | 0.04 EUR |
1924+ | 0.04 EUR |
9000+ | 0.04 EUR |
BSS138LT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13344 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
394+ | 0.18 EUR |
484+ | 0.15 EUR |
574+ | 0.12 EUR |
1147+ | 0.06 EUR |
1214+ | 0.06 EUR |
BSS138LT3G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.30 EUR |
363+ | 0.20 EUR |
459+ | 0.16 EUR |
918+ | 0.08 EUR |
1214+ | 0.06 EUR |
1283+ | 0.06 EUR |
2500+ | 0.05 EUR |
BSS138W |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 209 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
209+ | 0.34 EUR |
536+ | 0.13 EUR |
6000+ | 0.08 EUR |
BSS63LT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 95MHz
Current gain: 30
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 95MHz
Current gain: 30
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS64LT1G |
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Hersteller: ONSEMI
BSS64LT1G NPN SMD transistors
BSS64LT1G NPN SMD transistors
auf Bestellung 2480 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
287+ | 0.25 EUR |
1737+ | 0.04 EUR |
1832+ | 0.04 EUR |
BSS84 |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.36W; SOT23
Type of transistor: P-MOSFET
Case: SOT23
Drain-source voltage: -50V
Drain current: -130mA
On-state resistance: 17Ω
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.36W; SOT23
Type of transistor: P-MOSFET
Case: SOT23
Drain-source voltage: -50V
Drain current: -130mA
On-state resistance: 17Ω
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6247 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
194+ | 0.37 EUR |
247+ | 0.29 EUR |
272+ | 0.26 EUR |
1137+ | 0.06 EUR |
1191+ | 0.06 EUR |
BSS84LT1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23
Type of transistor: P-MOSFET
Case: SOT23
Drain-source voltage: -50V
Drain current: -130mA
On-state resistance: 10Ω
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23
Type of transistor: P-MOSFET
Case: SOT23
Drain-source voltage: -50V
Drain current: -130mA
On-state resistance: 10Ω
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4497 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
481+ | 0.15 EUR |
664+ | 0.11 EUR |
759+ | 0.09 EUR |
1069+ | 0.07 EUR |
1132+ | 0.06 EUR |
1147+ | 0.06 EUR |
BSV52LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 0.1A; 0.225W; SOT23,TO236AB
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 400MHz
Collector-emitter voltage: 12V
Current gain: 40...120
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.225W
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 0.1A; 0.225W; SOT23,TO236AB
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 400MHz
Collector-emitter voltage: 12V
Current gain: 40...120
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.225W
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 169 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
169+ | 0.43 EUR |
233+ | 0.30 EUR |
500+ | 0.14 EUR |
641+ | 0.11 EUR |
6000+ | 0.07 EUR |
BU406G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 200V; 7A; 60W; TO220AB
Case: TO220AB
Kind of package: tube
Mounting: THT
Frequency: 10MHz
Collector-emitter voltage: 200V
Collector current: 7A
Type of transistor: NPN
Power dissipation: 60W
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 200V; 7A; 60W; TO220AB
Case: TO220AB
Kind of package: tube
Mounting: THT
Frequency: 10MHz
Collector-emitter voltage: 200V
Collector current: 7A
Type of transistor: NPN
Power dissipation: 60W
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 275 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.26 EUR |
40+ | 1.79 EUR |
68+ | 1.06 EUR |
72+ | 1.00 EUR |
250+ | 0.97 EUR |
BUB323ZT4G |
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Hersteller: ONSEMI
BUB323ZT4G NPN SMD Darlington transistors
BUB323ZT4G NPN SMD Darlington transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BUL45D2G | ![]() |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 5A; 75W; TO220AB; 1.15÷1.39mm
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 5A
Power dissipation: 75W
Case: TO220AB
Current gain: 7...34
Mounting: THT
Kind of package: tube
Frequency: 13MHz
Heatsink thickness: 1.15...1.39mm
Anzahl je Verpackung: 1 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 5A; 75W; TO220AB; 1.15÷1.39mm
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 5A
Power dissipation: 75W
Case: TO220AB
Current gain: 7...34
Mounting: THT
Kind of package: tube
Frequency: 13MHz
Heatsink thickness: 1.15...1.39mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
10+ | 7.15 EUR |
11+ | 6.51 EUR |
30+ | 2.39 EUR |
500+ | 1.43 EUR |
BUT11AFTU |
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Hersteller: ONSEMI
BUT11AFTU NPN THT transistors
BUT11AFTU NPN THT transistors
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.53 EUR |
48+ | 1.52 EUR |
50+ | 1.43 EUR |
500+ | 1.42 EUR |
BUV21G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 40A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 40A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Anzahl je Verpackung: 1 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 40A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 40A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 22.24 EUR |
100+ | 21.38 EUR |
BUX85G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 1kV; 2A; 40W; TO220AB
Mounting: THT
Case: TO220AB
Collector-emitter voltage: 1kV
Collector current: 2A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 1kV; 2A; 40W; TO220AB
Mounting: THT
Case: TO220AB
Collector-emitter voltage: 1kV
Collector current: 2A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 238 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.22 EUR |
96+ | 0.75 EUR |
117+ | 0.61 EUR |
124+ | 0.58 EUR |
125+ | 0.57 EUR |
500+ | 0.56 EUR |
BUZ11-NR4941 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 810 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
43+ | 1.69 EUR |
79+ | 0.91 EUR |
92+ | 0.78 EUR |
97+ | 0.74 EUR |
500+ | 0.71 EUR |
BVSS123LT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1865 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
158+ | 0.45 EUR |
252+ | 0.28 EUR |
319+ | 0.22 EUR |
428+ | 0.17 EUR |
667+ | 0.11 EUR |
705+ | 0.10 EUR |
3000+ | 0.10 EUR |
BVSS138LT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BVSS84LT1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: -50V
Drain current: -130mA
On-state resistance: 10Ω
Type of transistor: P-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: -50V
Drain current: -130mA
On-state resistance: 10Ω
Type of transistor: P-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3152 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
313+ | 0.23 EUR |
368+ | 0.19 EUR |
468+ | 0.15 EUR |
650+ | 0.11 EUR |
685+ | 0.10 EUR |
BYV32-200G |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 16A; tube; Ifsm: 100A; TO220AB; Ir: 600uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AB
Max. forward voltage: 1.15V
Leakage current: 0.6mA
Reverse recovery time: 35ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 16A; tube; Ifsm: 100A; TO220AB; Ir: 600uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AB
Max. forward voltage: 1.15V
Leakage current: 0.6mA
Reverse recovery time: 35ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BYW29-200G | ![]() |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; TO220AC; 1.14÷1.39mm
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Heatsink thickness: 1.14...1.39mm
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; TO220AC; 1.14÷1.39mm
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Heatsink thickness: 1.14...1.39mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1716 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
54+ | 1.34 EUR |
57+ | 1.27 EUR |
60+ | 1.21 EUR |
93+ | 0.78 EUR |
98+ | 0.73 EUR |
1000+ | 0.70 EUR |
BYW51-200G |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 211 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.09 EUR |
44+ | 1.63 EUR |
50+ | 1.46 EUR |
57+ | 1.26 EUR |
61+ | 1.19 EUR |
500+ | 1.17 EUR |
BYW80-200G | ![]() |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1458 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.62 EUR |
75+ | 0.97 EUR |
83+ | 0.87 EUR |
86+ | 0.83 EUR |
88+ | 0.82 EUR |
100+ | 0.79 EUR |
BZG03C150G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 150V; SMD; reel,tape; SMA; single diode; 1uA
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 150V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: BZG03C
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 150V; SMD; reel,tape; SMA; single diode; 1uA
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 150V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: BZG03C
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 572 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
205+ | 0.35 EUR |
391+ | 0.18 EUR |
414+ | 0.17 EUR |
BZX79C10 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; bulk; CASE017AG; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX79C
Anzahl je Verpackung: 1 Stücke
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; bulk; CASE017AG; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX79C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 363 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.20 EUR |
405+ | 0.17 EUR |
1113+ | 0.06 EUR |
BZX79C11 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; bulk; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZX79C
Anzahl je Verpackung: 1 Stücke
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; bulk; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZX79C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX79C12 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZX79C
Anzahl je Verpackung: 1 Stücke
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZX79C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3139 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
521+ | 0.14 EUR |
642+ | 0.11 EUR |
1147+ | 0.06 EUR |
1520+ | 0.05 EUR |
1651+ | 0.04 EUR |
1786+ | 0.04 EUR |
BZX79C15 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; bulk; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX79C
Anzahl je Verpackung: 1 Stücke
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; bulk; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX79C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2972 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
676+ | 0.11 EUR |
834+ | 0.09 EUR |
1799+ | 0.04 EUR |
2689+ | 0.03 EUR |
2907+ | 0.03 EUR |
2972+ | 0.02 EUR |
BZX79C2V4 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 100uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 100uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2309 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
633+ | 0.11 EUR |
1568+ | 0.05 EUR |
2017+ | 0.04 EUR |
2075+ | 0.03 EUR |
2165+ | 0.03 EUR |
10000+ | 0.03 EUR |
BZX79C2V7 |
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Hersteller: ONSEMI
BZX79C2V7-FAI THT Zener diodes
BZX79C2V7-FAI THT Zener diodes
auf Bestellung 2650 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
381+ | 0.19 EUR |
2025+ | 0.04 EUR |
2137+ | 0.03 EUR |
BZX79C3V3 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; bulk; CASE017AG; single diode; 25uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 25µA
Manufacturer series: BZX79C
Anzahl je Verpackung: 1 Stücke
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; bulk; CASE017AG; single diode; 25uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 25µA
Manufacturer series: BZX79C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2888 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
685+ | 0.10 EUR |
730+ | 0.10 EUR |
1593+ | 0.05 EUR |
1701+ | 0.04 EUR |
BZX79C3V6 |
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Hersteller: ONSEMI
BZX79C3V6-FAI THT Zener diodes
BZX79C3V6-FAI THT Zener diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX79C3V9 |
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Hersteller: ONSEMI
BZX79C3V9-FAI THT Zener diodes
BZX79C3V9-FAI THT Zener diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX79C4V3 |
![]() |
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; bulk; CASE017AG; single diode; 5uA; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX79C
Anzahl je Verpackung: 1 Stücke
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; bulk; CASE017AG; single diode; 5uA; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX79C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX79C4V7 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; bulk; CASE017AG; single diode; 3uA; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 3µA
Anzahl je Verpackung: 1 Stücke
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; bulk; CASE017AG; single diode; 3uA; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 3µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1654 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
575+ | 0.12 EUR |
993+ | 0.07 EUR |
1283+ | 0.06 EUR |
1654+ | 0.04 EUR |
BZX79C5V1 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; bulk; CASE017AG; single diode; 2uA; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: BZX79C
Anzahl je Verpackung: 1 Stücke
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; bulk; CASE017AG; single diode; 2uA; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: BZX79C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1632 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
506+ | 0.14 EUR |
642+ | 0.11 EUR |
1142+ | 0.06 EUR |
1489+ | 0.05 EUR |
1632+ | 0.04 EUR |
BZX79C5V6 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; 1uA; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX79C
Anzahl je Verpackung: 1 Stücke
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; 1uA; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX79C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 962 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
944+ | 0.08 EUR |
962+ | 0.07 EUR |
BZX79C6V2 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; bulk; CASE017AG; single diode; 3uA; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX79C
Anzahl je Verpackung: 1 Stücke
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; bulk; CASE017AG; single diode; 3uA; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX79C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3806 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
521+ | 0.14 EUR |
642+ | 0.11 EUR |
1134+ | 0.06 EUR |
1516+ | 0.05 EUR |
1793+ | 0.04 EUR |
BZX79C6V8 |
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Hersteller: ONSEMI
BZX79C6V8-FAI THT Zener diodes
BZX79C6V8-FAI THT Zener diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX79C8V2 |
![]() |
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; bulk; CASE017AG; single diode; 0.7uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.7µA
Anzahl je Verpackung: 1 Stücke
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; bulk; CASE017AG; single diode; 0.7uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.7µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1887 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
658+ | 0.11 EUR |
814+ | 0.09 EUR |
1367+ | 0.05 EUR |
1731+ | 0.04 EUR |
1846+ | 0.04 EUR |
BZX79C9V1 |
![]() |
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; bulk; CASE017AG; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.5µA
Anzahl je Verpackung: 1 Stücke
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; bulk; CASE017AG; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.5µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2101 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
556+ | 0.13 EUR |
676+ | 0.11 EUR |
1220+ | 0.06 EUR |
1516+ | 0.05 EUR |
1916+ | 0.04 EUR |
2000+ | 0.04 EUR |
BZX84B10LT1G |
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Hersteller: ONSEMI
BZX84B10LT1G SMD Zener diodes
BZX84B10LT1G SMD Zener diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX84B12LT1G |
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Hersteller: ONSEMI
BZX84B12LT1G SMD Zener diodes
BZX84B12LT1G SMD Zener diodes
auf Bestellung 464 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
269+ | 0.27 EUR |
487+ | 0.14 EUR |
1338+ | 0.05 EUR |
150000+ | 0.03 EUR |
BZX84B15LT1G |
![]() |
Hersteller: ONSEMI
BZX84B15LT1G SMD Zener diodes
BZX84B15LT1G SMD Zener diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX84B16LT1G |
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Hersteller: ONSEMI
BZX84B16LT1G SMD Zener diodes
BZX84B16LT1G SMD Zener diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH