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BS170-D26Z BS170-D26Z ONSEMI BS170,MMBF170.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
218+0.33 EUR
262+0.27 EUR
300+0.24 EUR
341+0.21 EUR
500+0.16 EUR
Mindestbestellmenge: 132
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BS170-D27Z BS170-D27Z ONSEMI BS170,MMBF170.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 4226 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
235+0.3 EUR
291+0.25 EUR
400+0.18 EUR
556+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
Mindestbestellmenge: 152
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BC807-40LT1G BC807-40LT1G ONSEMI BC807-xxL.pdf description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 13385 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
685+0.1 EUR
993+0.072 EUR
1169+0.061 EUR
1690+0.042 EUR
1961+0.036 EUR
2128+0.034 EUR
3000+0.029 EUR
9000+0.024 EUR
Mindestbestellmenge: 455
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BC807-40LT3G BC807-40LT3G ONSEMI bc807-16lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BD140G BD140G ONSEMI BD136G_BD140G.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Current gain: 40...250
Collector-emitter voltage: 80V
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
Mounting: THT
Case: TO225
Power dissipation: 12.5W
Collector current: 1.5A
auf Bestellung 51 Stücke:
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47+1.54 EUR
51+1.4 EUR
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MMBD1401 MMBD1401 ONSEMI mmbd1405-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 2314 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
782+0.092 EUR
910+0.079 EUR
962+0.074 EUR
1021+0.07 EUR
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MMBD1403 MMBD1403 ONSEMI mmbd1405-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Produkt ist nicht verfügbar
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MMBD1404 MMBD1404 ONSEMI mmbd1405-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 414 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
414+0.17 EUR
Mindestbestellmenge: 358
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MMBD1404A MMBD1404A ONSEMI mmbd1405a-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Max. off-state voltage: 175V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.6A
Power dissipation: 0.35W
Produkt ist nicht verfügbar
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MMBD1405 MMBD1405 ONSEMI mmbd1405-d.pdf FAIR-S-A0002364113-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 2718 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
397+0.18 EUR
519+0.14 EUR
585+0.12 EUR
765+0.094 EUR
1000+0.084 EUR
Mindestbestellmenge: 313
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2N3904BU 2N3904BU ONSEMI 2N3904BU-DTE.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
auf Bestellung 10062 Stücke:
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264+0.27 EUR
348+0.21 EUR
404+0.18 EUR
709+0.1 EUR
993+0.072 EUR
1122+0.064 EUR
2000+0.057 EUR
5000+0.052 EUR
Mindestbestellmenge: 264
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2N3904TFR 2N3904TFR ONSEMI pzt3904-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 1896 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
863+0.083 EUR
926+0.077 EUR
1092+0.065 EUR
1177+0.061 EUR
1211+0.059 EUR
Mindestbestellmenge: 715
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BSS138L BSS138L ONSEMI BSS138L.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7540 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
532+0.13 EUR
693+0.1 EUR
787+0.091 EUR
939+0.076 EUR
1080+0.066 EUR
1260+0.057 EUR
3000+0.043 EUR
6000+0.036 EUR
Mindestbestellmenge: 385
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BSS138LT1G BSS138LT1G ONSEMI BSS138L.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 24167 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
459+0.16 EUR
569+0.13 EUR
810+0.088 EUR
1197+0.06 EUR
1356+0.053 EUR
3000+0.045 EUR
6000+0.041 EUR
9000+0.039 EUR
Mindestbestellmenge: 334
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BSS138LT3G BSS138LT3G ONSEMI BSS138L.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 840 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
451+0.16 EUR
556+0.13 EUR
762+0.094 EUR
840+0.086 EUR
Mindestbestellmenge: 313
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BSS138W BSS138W ONSEMI 5272_BSS138W.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3100 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
379+0.19 EUR
506+0.14 EUR
581+0.12 EUR
806+0.089 EUR
1000+0.083 EUR
3000+0.07 EUR
Mindestbestellmenge: 250
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LM2904DR2G LM2904DR2G ONSEMI lm358-d.pdf description Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
auf Bestellung 7220 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
397+0.18 EUR
451+0.16 EUR
491+0.15 EUR
538+0.13 EUR
667+0.11 EUR
736+0.097 EUR
770+0.093 EUR
2500+0.086 EUR
Mindestbestellmenge: 334
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FGH40N60SFDTU FGH40N60SFDTU ONSEMI FGH40N60SFD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.25 EUR
16+4.65 EUR
21+3.5 EUR
30+3.2 EUR
Mindestbestellmenge: 14
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FGH40N60SMD FGH40N60SMD ONSEMI FGH40N60SMD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.08 EUR
16+4.75 EUR
18+4.09 EUR
30+3.43 EUR
Mindestbestellmenge: 15
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FGH40N60UFDTU FGH40N60UFDTU ONSEMI FGH40N60UFD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 288 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.22 EUR
28+2.62 EUR
30+2.49 EUR
120+2.37 EUR
Mindestbestellmenge: 17
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FGAF40N60UFDTU ONSEMI FGAF40N60UFD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 20A
Produkt ist nicht verfügbar
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BCP53-10T1G BCP53-10T1G ONSEMI BCP53_ser.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 839 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
178+0.4 EUR
269+0.27 EUR
304+0.24 EUR
500+0.2 EUR
Mindestbestellmenge: 105
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BCP53-16T1G BCP53-16T1G ONSEMI BCP53_ser.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
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BC856BDW1T1G BC856BDW1T1G ONSEMI bc856bdw1t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 5842 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
676+0.11 EUR
977+0.073 EUR
1158+0.062 EUR
1713+0.042 EUR
1977+0.036 EUR
3000+0.031 EUR
Mindestbestellmenge: 500
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BC856BLT1G BC856BLT1G ONSEMI BC856_7_8.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC856BLT3G BC856BLT3G ONSEMI BC856_7_8.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC856BM3T5G BC856BM3T5G ONSEMI bc856bm3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1810 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
472+0.15 EUR
538+0.13 EUR
923+0.078 EUR
1348+0.053 EUR
1568+0.046 EUR
Mindestbestellmenge: 417
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MMBT2222ALT1G MMBT2222ALT1G ONSEMI MMBT2222.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 54946 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
667+0.11 EUR
977+0.073 EUR
1169+0.061 EUR
1767+0.04 EUR
2119+0.034 EUR
3000+0.026 EUR
9000+0.021 EUR
24000+0.017 EUR
Mindestbestellmenge: 500
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MMBT2222ALT3G MMBT2222ALT3G ONSEMI MMBT2222.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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MMBT2222ATT1G MMBT2222ATT1G ONSEMI MMBT2222ATT1G.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 2308 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
962+0.074 EUR
1276+0.056 EUR
1425+0.05 EUR
1731+0.041 EUR
1909+0.037 EUR
Mindestbestellmenge: 715
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MMBT2222AWT1G MMBT2222AWT1G ONSEMI MMBT2222AWT1G.pdf description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 6573 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
758+0.094 EUR
1087+0.066 EUR
1276+0.056 EUR
1563+0.046 EUR
1812+0.039 EUR
2101+0.034 EUR
2294+0.031 EUR
3000+0.027 EUR
Mindestbestellmenge: 500
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MMBT2222AWT3G MMBT2222AWT3G ONSEMI MMBT2222AWT1G.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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1N5408RLG 1N5408RLG ONSEMI 1N540x.PDF description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; reel,tape; Ifsm: 200A; DO27; Ir: 50uA
Mounting: THT
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
auf Bestellung 1249 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
404+0.18 EUR
486+0.15 EUR
527+0.14 EUR
569+0.13 EUR
589+0.12 EUR
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FOD3120SD FOD3120SD ONSEMI FOD3120SD.pdf Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
auf Bestellung 1370 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.35 EUR
35+2.07 EUR
38+1.9 EUR
43+1.67 EUR
44+1.63 EUR
100+1.42 EUR
250+1.29 EUR
300+1.27 EUR
500+1.22 EUR
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FOD3120SDV FOD3120SDV ONSEMI FOD3120SD.pdf Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Turn-on time: 60ns
Turn-off time: 60ns
Slew rate: 35kV/μs
Produkt ist nicht verfügbar
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MC74AC132DG MC74AC132DG ONSEMI MC74AC132DG.PDF Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of gate: NAND
Kind of input: with Schmitt trigger
Family: AC
Number of inputs: 2
Kind of package: tube
auf Bestellung 399 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
204+0.35 EUR
218+0.33 EUR
232+0.31 EUR
248+0.29 EUR
275+0.27 EUR
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BCP56-16T1G BCP56-16T1G ONSEMI BCP56_ser.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Produkt ist nicht verfügbar
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BCP56-16T3G BCP56-16T3G ONSEMI bcp56t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Produkt ist nicht verfügbar
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SBCP56-16T1G SBCP56-16T1G ONSEMI BCP56_ser.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Produkt ist nicht verfügbar
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2N7002K 2N7002K ONSEMI 2n7002k-fsc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 763 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
323+0.22 EUR
490+0.15 EUR
588+0.12 EUR
763+0.094 EUR
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2N7002KT1G 2N7002KT1G ONSEMI 2N7002K.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.38A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 29 Stücke:
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29+2.46 EUR
Mindestbestellmenge: 29
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1N4742A 1N4742A ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; bulk; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: DO41
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
auf Bestellung 3452 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
1352+0.053 EUR
1598+0.045 EUR
Mindestbestellmenge: 715
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1N4742ATR 1N4742ATR ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO41
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
auf Bestellung 1204 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
569+0.13 EUR
658+0.11 EUR
1034+0.069 EUR
1204+0.06 EUR
Mindestbestellmenge: 455
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LM317TG LM317TG ONSEMI LM317.pdf Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 1.5A; TO220-3
Output voltage: 1.2...37V
Mounting: THT
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Heatsink thickness: 0.51...0.61mm
Output current: 1.5A
Number of channels: 1
Input voltage: 3...40V
Kind of voltage regulator: adjustable; linear
Kind of package: tube
Case: TO220-3
Manufacturer series: LM317
auf Bestellung 510 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
155+0.46 EUR
167+0.43 EUR
174+0.41 EUR
180+0.4 EUR
250+0.37 EUR
500+0.35 EUR
Mindestbestellmenge: 117
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CAT24C16HU4I-GT3 ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Operating voltage: 1.7...5.5V
Memory: 16kb EEPROM
Memory organisation: 2048x8bit
Clock frequency: 400kHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: I2C
Produkt ist nicht verfügbar
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BC847CDW1T1G BC847CDW1T1G ONSEMI bc846bdw1t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC847CDXV6T1G BC847CDXV6T1G ONSEMI bc847cdxv6t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 3316 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
496+0.14 EUR
711+0.1 EUR
838+0.085 EUR
1205+0.059 EUR
1374+0.052 EUR
2000+0.048 EUR
Mindestbestellmenge: 358
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BC847CLT1G BC847CLT1G ONSEMI BC846ALT1G.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
260+0.27 EUR
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BC847CLT3G BC847CLT3G ONSEMI BC846ALT1G.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC857CDW1T1G BC857CDW1T1G ONSEMI bc856bdw1t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC857CLT1G BC857CLT1G ONSEMI BC856_7_8.PDF description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
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BC817-25LT1G BC817-25LT1G ONSEMI BC817-xxL.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 100MHz
Current gain: 160...400
Kind of package: reel; tape
auf Bestellung 14197 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
676+0.11 EUR
993+0.072 EUR
1180+0.061 EUR
1725+0.041 EUR
2000+0.036 EUR
3000+0.029 EUR
6000+0.025 EUR
9000+0.023 EUR
Mindestbestellmenge: 455
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BC817-25LT3G BC817-25LT3G ONSEMI bc817-16lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
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SBC817-25LT1G SBC817-25LT1G ONSEMI BC817-xxL.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
280+0.26 EUR
Mindestbestellmenge: 280
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SBC817-25LT3G SBC817-25LT3G ONSEMI bc817-16lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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BC32725BU BC32725BU ONSEMI BC327.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Case: TO92
Current gain: 160...400
Mounting: THT
Frequency: 100MHz
Power dissipation: 0.625W
Kind of package: bulk
auf Bestellung 3089 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
291+0.25 EUR
343+0.21 EUR
640+0.11 EUR
926+0.077 EUR
1000+0.075 EUR
Mindestbestellmenge: 228
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SS26FL SS26FL ONSEMI SS24FL_SS26FL.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 10389 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
281+0.25 EUR
323+0.22 EUR
360+0.2 EUR
404+0.18 EUR
532+0.13 EUR
1000+0.12 EUR
1500+0.11 EUR
Mindestbestellmenge: 200
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SS26T3G SS26T3G ONSEMI SS26.PDF description Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 3032 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
281+0.25 EUR
307+0.23 EUR
374+0.19 EUR
407+0.18 EUR
500+0.14 EUR
Mindestbestellmenge: 209
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NRVBSS26NT3G ONSEMI ss26-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Max. forward impulse current: 40A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MOC3063SR2M MOC3063SR2M ONSEMI MOC3063SR2M.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; Gull wing 6; Ch: 1; MOC3063M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: Gull wing 6
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3063M
Slew rate: 0.6kV/μs
Output voltage: 600V
Produkt ist nicht verfügbar
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BS170-D26Z BS170,MMBF170.PDF
BS170-D26Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
218+0.33 EUR
262+0.27 EUR
300+0.24 EUR
341+0.21 EUR
500+0.16 EUR
Mindestbestellmenge: 132
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BS170-D27Z BS170,MMBF170.PDF
BS170-D27Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 4226 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
235+0.3 EUR
291+0.25 EUR
400+0.18 EUR
556+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
Mindestbestellmenge: 152
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BC807-40LT1G description BC807-xxL.pdf
BC807-40LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 13385 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
685+0.1 EUR
993+0.072 EUR
1169+0.061 EUR
1690+0.042 EUR
1961+0.036 EUR
2128+0.034 EUR
3000+0.029 EUR
9000+0.024 EUR
Mindestbestellmenge: 455
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BC807-40LT3G bc807-16lt1-d.pdf
BC807-40LT3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BD140G BD136G_BD140G.PDF
BD140G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Current gain: 40...250
Collector-emitter voltage: 80V
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
Mounting: THT
Case: TO225
Power dissipation: 12.5W
Collector current: 1.5A
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
51+1.4 EUR
Mindestbestellmenge: 47
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MMBD1401 mmbd1405-d.pdf
MMBD1401
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 2314 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
782+0.092 EUR
910+0.079 EUR
962+0.074 EUR
1021+0.07 EUR
Mindestbestellmenge: 625
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MMBD1403 mmbd1405-d.pdf
MMBD1403
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Produkt ist nicht verfügbar
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MMBD1404 mmbd1405-d.pdf
MMBD1404
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 414 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
414+0.17 EUR
Mindestbestellmenge: 358
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MMBD1404A mmbd1405a-d.pdf
MMBD1404A
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Max. off-state voltage: 175V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.6A
Power dissipation: 0.35W
Produkt ist nicht verfügbar
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MMBD1405 mmbd1405-d.pdf FAIR-S-A0002364113-1.pdf?t.download=true&u=5oefqw
MMBD1405
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 2718 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
397+0.18 EUR
519+0.14 EUR
585+0.12 EUR
765+0.094 EUR
1000+0.084 EUR
Mindestbestellmenge: 313
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2N3904BU 2N3904BU-DTE.pdf
2N3904BU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
auf Bestellung 10062 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
348+0.21 EUR
404+0.18 EUR
709+0.1 EUR
993+0.072 EUR
1122+0.064 EUR
2000+0.057 EUR
5000+0.052 EUR
Mindestbestellmenge: 264
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2N3904TFR pzt3904-d.pdf
2N3904TFR
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 1896 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
863+0.083 EUR
926+0.077 EUR
1092+0.065 EUR
1177+0.061 EUR
1211+0.059 EUR
Mindestbestellmenge: 715
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BSS138L BSS138L.PDF
BSS138L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7540 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
532+0.13 EUR
693+0.1 EUR
787+0.091 EUR
939+0.076 EUR
1080+0.066 EUR
1260+0.057 EUR
3000+0.043 EUR
6000+0.036 EUR
Mindestbestellmenge: 385
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BSS138LT1G BSS138L.PDF
BSS138LT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 24167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
459+0.16 EUR
569+0.13 EUR
810+0.088 EUR
1197+0.06 EUR
1356+0.053 EUR
3000+0.045 EUR
6000+0.041 EUR
9000+0.039 EUR
Mindestbestellmenge: 334
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BSS138LT3G BSS138L.PDF
BSS138LT3G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 840 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
451+0.16 EUR
556+0.13 EUR
762+0.094 EUR
840+0.086 EUR
Mindestbestellmenge: 313
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BSS138W 5272_BSS138W.pdf
BSS138W
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
379+0.19 EUR
506+0.14 EUR
581+0.12 EUR
806+0.089 EUR
1000+0.083 EUR
3000+0.07 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
LM2904DR2G description lm358-d.pdf
LM2904DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
auf Bestellung 7220 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
397+0.18 EUR
451+0.16 EUR
491+0.15 EUR
538+0.13 EUR
667+0.11 EUR
736+0.097 EUR
770+0.093 EUR
2500+0.086 EUR
Mindestbestellmenge: 334
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FGH40N60SFDTU FGH40N60SFD.pdf
FGH40N60SFDTU
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.25 EUR
16+4.65 EUR
21+3.5 EUR
30+3.2 EUR
Mindestbestellmenge: 14
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FGH40N60SMD FGH40N60SMD.pdf
FGH40N60SMD
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.08 EUR
16+4.75 EUR
18+4.09 EUR
30+3.43 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
FGH40N60UFDTU FGH40N60UFD.pdf
FGH40N60UFDTU
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 288 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.22 EUR
28+2.62 EUR
30+2.49 EUR
120+2.37 EUR
Mindestbestellmenge: 17
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FGAF40N60UFDTU FGAF40N60UFD.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 20A
Produkt ist nicht verfügbar
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BCP53-10T1G BCP53_ser.pdf
BCP53-10T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 839 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
178+0.4 EUR
269+0.27 EUR
304+0.24 EUR
500+0.2 EUR
Mindestbestellmenge: 105
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BCP53-16T1G BCP53_ser.pdf
BCP53-16T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
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BC856BDW1T1G bc856bdw1t1-d.pdf
BC856BDW1T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 5842 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
676+0.11 EUR
977+0.073 EUR
1158+0.062 EUR
1713+0.042 EUR
1977+0.036 EUR
3000+0.031 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BC856BLT1G BC856_7_8.PDF
BC856BLT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC856BLT3G BC856_7_8.PDF
BC856BLT3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC856BM3T5G bc856bm3-d.pdf
BC856BM3T5G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1810 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
472+0.15 EUR
538+0.13 EUR
923+0.078 EUR
1348+0.053 EUR
1568+0.046 EUR
Mindestbestellmenge: 417
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MMBT2222ALT1G MMBT2222.PDF
MMBT2222ALT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 54946 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
667+0.11 EUR
977+0.073 EUR
1169+0.061 EUR
1767+0.04 EUR
2119+0.034 EUR
3000+0.026 EUR
9000+0.021 EUR
24000+0.017 EUR
Mindestbestellmenge: 500
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MMBT2222ALT3G MMBT2222.PDF
MMBT2222ALT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBT2222ATT1G MMBT2222ATT1G.PDF
MMBT2222ATT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 2308 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
962+0.074 EUR
1276+0.056 EUR
1425+0.05 EUR
1731+0.041 EUR
1909+0.037 EUR
Mindestbestellmenge: 715
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MMBT2222AWT1G description MMBT2222AWT1G.pdf
MMBT2222AWT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 6573 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
758+0.094 EUR
1087+0.066 EUR
1276+0.056 EUR
1563+0.046 EUR
1812+0.039 EUR
2101+0.034 EUR
2294+0.031 EUR
3000+0.027 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
MMBT2222AWT3G MMBT2222AWT1G.pdf
MMBT2222AWT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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1N5408RLG description 1N540x.PDF
1N5408RLG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; reel,tape; Ifsm: 200A; DO27; Ir: 50uA
Mounting: THT
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
auf Bestellung 1249 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
404+0.18 EUR
486+0.15 EUR
527+0.14 EUR
569+0.13 EUR
589+0.12 EUR
Mindestbestellmenge: 200
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FOD3120SD FOD3120SD.pdf
FOD3120SD
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
auf Bestellung 1370 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.35 EUR
35+2.07 EUR
38+1.9 EUR
43+1.67 EUR
44+1.63 EUR
100+1.42 EUR
250+1.29 EUR
300+1.27 EUR
500+1.22 EUR
Mindestbestellmenge: 31
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FOD3120SDV FOD3120SD.pdf
FOD3120SDV
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Turn-on time: 60ns
Turn-off time: 60ns
Slew rate: 35kV/μs
Produkt ist nicht verfügbar
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MC74AC132DG MC74AC132DG.PDF
MC74AC132DG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of gate: NAND
Kind of input: with Schmitt trigger
Family: AC
Number of inputs: 2
Kind of package: tube
auf Bestellung 399 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
204+0.35 EUR
218+0.33 EUR
232+0.31 EUR
248+0.29 EUR
275+0.27 EUR
Mindestbestellmenge: 152
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BCP56-16T1G BCP56_ser.pdf
BCP56-16T1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Produkt ist nicht verfügbar
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BCP56-16T3G bcp56t1-d.pdf
BCP56-16T3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Produkt ist nicht verfügbar
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SBCP56-16T1G BCP56_ser.pdf
SBCP56-16T1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Produkt ist nicht verfügbar
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2N7002K 2n7002k-fsc-d.pdf
2N7002K
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 763 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
323+0.22 EUR
490+0.15 EUR
588+0.12 EUR
763+0.094 EUR
Mindestbestellmenge: 228
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2N7002KT1G 2N7002K.PDF
2N7002KT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.38A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.46 EUR
Mindestbestellmenge: 29
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1N4742A 1N47xxA.PDF
1N4742A
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; bulk; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: DO41
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
auf Bestellung 3452 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1352+0.053 EUR
1598+0.045 EUR
Mindestbestellmenge: 715
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1N4742ATR 1N47xxA.PDF
1N4742ATR
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO41
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
auf Bestellung 1204 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
569+0.13 EUR
658+0.11 EUR
1034+0.069 EUR
1204+0.06 EUR
Mindestbestellmenge: 455
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LM317TG LM317.pdf
LM317TG
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 1.5A; TO220-3
Output voltage: 1.2...37V
Mounting: THT
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Heatsink thickness: 0.51...0.61mm
Output current: 1.5A
Number of channels: 1
Input voltage: 3...40V
Kind of voltage regulator: adjustable; linear
Kind of package: tube
Case: TO220-3
Manufacturer series: LM317
auf Bestellung 510 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
155+0.46 EUR
167+0.43 EUR
174+0.41 EUR
180+0.4 EUR
250+0.37 EUR
500+0.35 EUR
Mindestbestellmenge: 117
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CAT24C16HU4I-GT3 CAT24C01-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Operating voltage: 1.7...5.5V
Memory: 16kb EEPROM
Memory organisation: 2048x8bit
Clock frequency: 400kHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: I2C
Produkt ist nicht verfügbar
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BC847CDW1T1G bc846bdw1t1-d.pdf
BC847CDW1T1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC847CDXV6T1G bc847cdxv6t1-d.pdf
BC847CDXV6T1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 3316 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
496+0.14 EUR
711+0.1 EUR
838+0.085 EUR
1205+0.059 EUR
1374+0.052 EUR
2000+0.048 EUR
Mindestbestellmenge: 358
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BC847CLT1G BC846ALT1G.PDF
BC847CLT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
260+0.27 EUR
Mindestbestellmenge: 260
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BC847CLT3G BC846ALT1G.PDF
BC847CLT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC857CDW1T1G bc856bdw1t1-d.pdf
BC857CDW1T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC857CLT1G description BC856_7_8.PDF
BC857CLT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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BC817-25LT1G BC817-xxL.pdf
BC817-25LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 100MHz
Current gain: 160...400
Kind of package: reel; tape
auf Bestellung 14197 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
676+0.11 EUR
993+0.072 EUR
1180+0.061 EUR
1725+0.041 EUR
2000+0.036 EUR
3000+0.029 EUR
6000+0.025 EUR
9000+0.023 EUR
Mindestbestellmenge: 455
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BC817-25LT3G bc817-16lt1-d.pdf
BC817-25LT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
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SBC817-25LT1G BC817-xxL.pdf
SBC817-25LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
280+0.26 EUR
Mindestbestellmenge: 280
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SBC817-25LT3G bc817-16lt1-d.pdf
SBC817-25LT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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BC32725BU BC327.pdf
BC32725BU
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Case: TO92
Current gain: 160...400
Mounting: THT
Frequency: 100MHz
Power dissipation: 0.625W
Kind of package: bulk
auf Bestellung 3089 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
291+0.25 EUR
343+0.21 EUR
640+0.11 EUR
926+0.077 EUR
1000+0.075 EUR
Mindestbestellmenge: 228
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SS26FL SS24FL_SS26FL.pdf
SS26FL
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 10389 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
281+0.25 EUR
323+0.22 EUR
360+0.2 EUR
404+0.18 EUR
532+0.13 EUR
1000+0.12 EUR
1500+0.11 EUR
Mindestbestellmenge: 200
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SS26T3G description SS26.PDF
SS26T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 3032 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
281+0.25 EUR
307+0.23 EUR
374+0.19 EUR
407+0.18 EUR
500+0.14 EUR
Mindestbestellmenge: 209
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NRVBSS26NT3G ss26-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Max. forward impulse current: 40A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MOC3063SR2M MOC3063SR2M.pdf
MOC3063SR2M
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; Gull wing 6; Ch: 1; MOC3063M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: Gull wing 6
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3063M
Slew rate: 0.6kV/μs
Output voltage: 600V
Produkt ist nicht verfügbar
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