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2N7000-D74Z 2N7000-D74Z ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E58CC03277C0D2&compId=2N7000_2N7002_NDS7002A.PDF?ci_sign=0fd71bfe4fa8b72f11e37dab9fdebe94573526a9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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2N7000-D75Z 2N7000-D75Z ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E58CC03277C0D2&compId=2N7000_2N7002_NDS7002A.PDF?ci_sign=0fd71bfe4fa8b72f11e37dab9fdebe94573526a9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
auf Bestellung 2009 Stücke:
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122+0.59 EUR
192+0.37 EUR
243+0.29 EUR
348+0.21 EUR
486+0.15 EUR
516+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 122
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2N7000BU 2N7000BU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8D7D6C8403D5EA&compId=2N7000TA.pdf?ci_sign=570549f6b8c8a8b920ec72fe65fd2392834410d1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Produkt ist nicht verfügbar
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2N7000TA 2N7000TA ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8D7D6C8403D5EA&compId=2N7000TA.pdf?ci_sign=570549f6b8c8a8b920ec72fe65fd2392834410d1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
auf Bestellung 261 Stücke:
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162+0.44 EUR
202+0.35 EUR
241+0.3 EUR
261+0.27 EUR
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BS170 BS170 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD94EFB7E48E4FC0D3&compId=BS170%2CMMBF170.PDF?ci_sign=3412997d5f321b4eb67995ad7ee0b0f5718b3379 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 14840 Stücke:
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209+0.34 EUR
300+0.24 EUR
382+0.19 EUR
491+0.15 EUR
625+0.11 EUR
1000+0.1 EUR
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BS170-D75Z BS170-D75Z ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD94EFB7E48E4FC0D3&compId=BS170%2CMMBF170.PDF?ci_sign=3412997d5f321b4eb67995ad7ee0b0f5718b3379 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 84 Stücke:
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84+0.86 EUR
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BS170-D26Z BS170-D26Z ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD94EFB7E48E4FC0D3&compId=BS170%2CMMBF170.PDF?ci_sign=3412997d5f321b4eb67995ad7ee0b0f5718b3379 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 2028 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
190+0.38 EUR
226+0.32 EUR
262+0.27 EUR
307+0.23 EUR
491+0.15 EUR
521+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 152
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BS170-D27Z BS170-D27Z ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD94EFB7E48E4FC0D3&compId=BS170%2CMMBF170.PDF?ci_sign=3412997d5f321b4eb67995ad7ee0b0f5718b3379 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
Produkt ist nicht verfügbar
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BC807-40LT1G BC807-40LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999D2FDE892C0B820&compId=BC807-xxL.pdf?ci_sign=369718e845cd41955b4cea07c403ea15e81c2c56 description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 12464 Stücke:
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500+0.14 EUR
625+0.11 EUR
736+0.097 EUR
1083+0.066 EUR
1283+0.056 EUR
1825+0.039 EUR
3572+0.02 EUR
3788+0.019 EUR
Mindestbestellmenge: 500
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BC807-40LT3G BC807-40LT3G ONSEMI bc807-16lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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CAT24C08C4ATR ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C165F7B20D5&compId=CAT24C01-D.pdf?ci_sign=9104330373643d222b394e72620f652045c3d8e0 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C08C4CTR ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C165F7C60D5&compId=CAT24C01-D.pdf?ci_sign=3ea1e0de3b7d52e26527ef3c3b1651ba3badaab3 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C08C5ATR ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79BEB746F60D5&compId=CAT24C01-D.pdf?ci_sign=c3c2446437a0878847a83f5b80cb0be2fcb580c2 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BD14010STU BD14010STU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA6F24EF38EAE40CE&compId=BD136_138_140.pdf?ci_sign=110b6f88cafbe0e2a7fcb0c0b1b608b4bf5ae0b0 Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Current gain: 63...160
Collector-emitter voltage: 80V
Polarisation: bipolar
Kind of package: tube
Type of transistor: PNP
Mounting: THT
Case: TO126ISO
Power dissipation: 12.5W
Collector current: 1.5A
auf Bestellung 1221 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.36 EUR
73+0.99 EUR
82+0.88 EUR
121+0.59 EUR
128+0.56 EUR
Mindestbestellmenge: 53
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BD140G BD140G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE786885AC34561C745&compId=BD136G_BD140G.PDF?ci_sign=8552ac78b3b0d24ec607351a4d31550c598ef06f Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Current gain: 40...250
Collector-emitter voltage: 80V
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
Mounting: THT
Case: TO225
Power dissipation: 12.5W
Collector current: 1.5A
auf Bestellung 179 Stücke:
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42+1.72 EUR
76+0.95 EUR
110+0.65 EUR
116+0.62 EUR
Mindestbestellmenge: 42
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MMBD1401 MMBD1401 ONSEMI mmbd1405-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 2724 Stücke:
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385+0.19 EUR
575+0.12 EUR
691+0.1 EUR
757+0.095 EUR
953+0.075 EUR
1007+0.071 EUR
1047+0.068 EUR
Mindestbestellmenge: 385
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MMBD1403 MMBD1403 ONSEMI mmbd1405-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Produkt ist nicht verfügbar
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MMBD1404 MMBD1404 ONSEMI mmbd1405-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 844 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
374+0.19 EUR
407+0.18 EUR
528+0.14 EUR
596+0.12 EUR
844+0.084 EUR
Mindestbestellmenge: 313
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MMBD1404A MMBD1404A ONSEMI mmbd1405a-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Max. off-state voltage: 175V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.6A
Power dissipation: 0.35W
Produkt ist nicht verfügbar
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MMBD1405 MMBD1405 ONSEMI mmbd1405-d.pdf FAIR-S-A0002364113-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Produkt ist nicht verfügbar
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2N3904BU 2N3904BU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE59EAD0FE9CFD7211C&compId=2N3904BU-DTE.pdf?ci_sign=bb09d5cab5b69cc40aa5854992f942439f1fadc8 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
auf Bestellung 6237 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
281+0.25 EUR
323+0.22 EUR
483+0.15 EUR
577+0.12 EUR
1241+0.058 EUR
1313+0.054 EUR
Mindestbestellmenge: 228
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2N3904TFR 2N3904TFR ONSEMI pzt3904-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 967 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
562+0.13 EUR
765+0.094 EUR
866+0.083 EUR
967+0.074 EUR
Mindestbestellmenge: 358
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BSS138L BSS138L ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90D007811653C0D5&compId=BSS138L.PDF?ci_sign=3b1c6cb55f89c6709af38d9d877a48d80e8ff74d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Drain current: 0.2A
Power dissipation: 0.225W
Pulsed drain current: 0.8A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
Drain-source voltage: 50V
auf Bestellung 11469 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
486+0.15 EUR
619+0.12 EUR
693+0.1 EUR
812+0.088 EUR
1819+0.039 EUR
1924+0.037 EUR
Mindestbestellmenge: 385
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BSS138LT1G BSS138LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDB81F5DA269A88E0C7&compId=BSS138L.PDF?ci_sign=d4e7758a5e7668a7ea517da14f04673491c06f7a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Drain current: 0.2A
Power dissipation: 0.225W
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
Drain-source voltage: 50V
auf Bestellung 13382 Stücke:
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239+0.3 EUR
404+0.18 EUR
521+0.14 EUR
747+0.096 EUR
908+0.079 EUR
1755+0.041 EUR
1859+0.038 EUR
Mindestbestellmenge: 239
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BSS138LT3G BSS138LT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDB81F5DA269A88E0C7&compId=BSS138L.PDF?ci_sign=d4e7758a5e7668a7ea517da14f04673491c06f7a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Drain current: 0.2A
Power dissipation: 0.225W
Pulsed drain current: 0.8A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
Drain-source voltage: 50V
auf Bestellung 11672 Stücke:
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278+0.26 EUR
417+0.17 EUR
589+0.12 EUR
955+0.075 EUR
1211+0.059 EUR
1283+0.056 EUR
10000+0.054 EUR
Mindestbestellmenge: 278
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BSS138W BSS138W ONSEMI bss138w-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SC70; SOT323
Mounting: SMD
Drain current: 0.21A
Power dissipation: 0.34W
On-state resistance: 5.8Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
Drain-source voltage: 50V
auf Bestellung 3179 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
295+0.24 EUR
360+0.2 EUR
552+0.13 EUR
638+0.11 EUR
827+0.087 EUR
875+0.082 EUR
1500+0.079 EUR
Mindestbestellmenge: 193
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MMBFJ113 MMBFJ113 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8B7D2AD995F5EA&compId=J111.pdf?ci_sign=23158dcca2e47f7ef2d19b8846e159bbca0e7d3b Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA
Kind of package: reel; tape
Type of transistor: N-JFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 2mA
Gate current: 50mA
Power dissipation: 0.35W
On-state resistance: 100Ω
auf Bestellung 3378 Stücke:
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157+0.46 EUR
240+0.3 EUR
298+0.24 EUR
353+0.2 EUR
410+0.17 EUR
589+0.12 EUR
1000+0.11 EUR
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1N4448TR 1N4448TR ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CF5A650B2BAE0C7&compId=1N91x_1N4x48.PDF?ci_sign=a4258b07e70007c6a3a8c603a8d2c85f44ec76b5 Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Kind of package: reel; tape
Power dissipation: 0.5W
auf Bestellung 9341 Stücke:
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1112+0.064 EUR
1690+0.042 EUR
2033+0.035 EUR
2605+0.027 EUR
3165+0.023 EUR
3876+0.018 EUR
4386+0.016 EUR
4762+0.015 EUR
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LM2904DR2G LM2904DR2G ONSEMI lm358-d.pdf description Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Case: SO8
Slew rate: 0.3V/μs
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
Number of channels: 2
auf Bestellung 7472 Stücke:
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228+0.31 EUR
421+0.17 EUR
455+0.16 EUR
591+0.12 EUR
887+0.081 EUR
939+0.076 EUR
2500+0.073 EUR
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FGH40N60SFDTU FGH40N60SFDTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFCDA6C5122C259&compId=FGH40N60SFD.pdf?ci_sign=2c0d510a78f53d439b7ac465468ba47d6ff90201 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 201 Stücke:
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13+5.81 EUR
14+5.48 EUR
21+3.56 EUR
22+3.36 EUR
90+3.33 EUR
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FGH40N60SMD FGH40N60SMD ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFCDC408D444259&compId=FGH40N60SMD.pdf?ci_sign=0ebfad5f1d5a27cf5691c0f6edf47b158174848d Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.56 EUR
14+5.29 EUR
19+3.78 EUR
20+3.58 EUR
120+3.56 EUR
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FGH40N60UFDTU FGH40N60UFDTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFCE02DE17B4259&compId=FGH40N60UFD.pdf?ci_sign=e2e7f4c0d5faa7c11d312a18c4f8466a13707ecb Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 288 Stücke:
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28+2.62 EUR
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FGAF40N60UFDTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94EA732797BEA0CE&compId=FGAF40N60UFD.pdf?ci_sign=da65e30aed0b2d6dbd164eba13db74250abcad66 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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MC78LC33NTRG MC78LC33NTRG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE89192C382DF65F3D3&compId=MC78LCxx.pdf?ci_sign=7019e40ae0e8bf91b9863955cb642b881805fa12 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 53mV
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
auf Bestellung 2850 Stücke:
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129+0.56 EUR
159+0.45 EUR
180+0.4 EUR
182+0.39 EUR
187+0.38 EUR
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BCP53-10T1G BCP53-10T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999CF6447155D9820&compId=BCP53_ser.pdf?ci_sign=8f342b934d9aeecf2d8169dc8963df0889f15590 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 253 Stücke:
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100+0.72 EUR
152+0.47 EUR
214+0.33 EUR
253+0.29 EUR
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BCP53-16T1G BCP53-16T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999CF6447155D9820&compId=BCP53_ser.pdf?ci_sign=8f342b934d9aeecf2d8169dc8963df0889f15590 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 1103 Stücke:
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143+0.5 EUR
158+0.45 EUR
176+0.41 EUR
269+0.27 EUR
376+0.19 EUR
400+0.18 EUR
414+0.17 EUR
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LM2574DW-ADJR2G LM2574DW-ADJR2G ONSEMI LM2574.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: SO16-W
Mounting: SMD
Topology: buck
Number of channels: 1
Kind of package: reel; tape
auf Bestellung 791 Stücke:
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33+2.17 EUR
40+1.82 EUR
42+1.72 EUR
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LM2574N-5G LM2574N-5G ONSEMI LM2574.pdf description Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
Produkt ist nicht verfügbar
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LM2574N-ADJG LM2574N-ADJG ONSEMI LM2574.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
auf Bestellung 699 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.03 EUR
48+1.5 EUR
53+1.36 EUR
56+1.29 EUR
100+1.26 EUR
Mindestbestellmenge: 36
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BC856BDW1T1G BC856BDW1T1G ONSEMI bc856bdw1t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 649 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
589+0.12 EUR
649+0.11 EUR
Mindestbestellmenge: 500
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BC856BDW1T3G BC856BDW1T3G ONSEMI bc856bdw1t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC856BLT1G BC856BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 10960 Stücke:
Lieferzeit 14-21 Tag (e)
555+0.13 EUR
834+0.086 EUR
1257+0.057 EUR
1516+0.047 EUR
2284+0.031 EUR
3876+0.018 EUR
4099+0.017 EUR
Mindestbestellmenge: 555
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BC856BLT3G BC856BLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC856BM3T5G BC856BM3T5G ONSEMI bc856bm3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2481 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
472+0.15 EUR
538+0.13 EUR
969+0.074 EUR
2000+0.036 EUR
2119+0.034 EUR
Mindestbestellmenge: 385
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MMBT2222ALT1G MMBT2222ALT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBDBC7BD075F280C7&compId=MMBT2222.PDF?ci_sign=6b9501ec688ce9f05a229b3a4a1c53ed2d4b2134 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 7340 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
770+0.093 EUR
1413+0.051 EUR
2050+0.035 EUR
2348+0.03 EUR
5209+0.014 EUR
5495+0.013 EUR
Mindestbestellmenge: 500
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MMBT2222ALT3G MMBT2222ALT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBDBC7BD075F280C7&compId=MMBT2222.PDF?ci_sign=6b9501ec688ce9f05a229b3a4a1c53ed2d4b2134 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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MMBT2222ATT1G MMBT2222ATT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBDBC7E8C047480C7&compId=MMBT2222ATT1G.PDF?ci_sign=468f837cfbcf448a06c6516e77b2adfdcd2f2cce Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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MMBT2222AWT1G MMBT2222AWT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB9DE0C14E190143&compId=MMBT2222AWT1G.pdf?ci_sign=1309ef5d9c266313b6366cd4fd67d918c9674f9c description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 6744 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
642+0.11 EUR
969+0.074 EUR
1177+0.061 EUR
1812+0.039 EUR
3031+0.024 EUR
3206+0.022 EUR
Mindestbestellmenge: 500
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MMBT2222AWT3G MMBT2222AWT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB9DE0C14E190143&compId=MMBT2222AWT1G.pdf?ci_sign=1309ef5d9c266313b6366cd4fd67d918c9674f9c Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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1N5408RLG 1N5408RLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FB8749461F840D6&compId=1N540x.PDF?ci_sign=edfd626bae2e7653ac1fbc632df6258f6bde519c description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; reel,tape; Ifsm: 200A; DO27; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
auf Bestellung 1838 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
355+0.2 EUR
428+0.17 EUR
468+0.15 EUR
538+0.13 EUR
575+0.12 EUR
Mindestbestellmenge: 179
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FOD3120 FOD3120 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C014D34DDE0D6&compId=FOD3120.pdf?ci_sign=40b9fdfef6df5491cf88ae337df062e3ed947fbc Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; DIP8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 35kV/μs
auf Bestellung 656 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.3 EUR
40+1.8 EUR
49+1.47 EUR
52+1.4 EUR
100+1.34 EUR
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FOD3120SD FOD3120SD ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AE90275D877C7E27&compId=FOD3120SD.pdf?ci_sign=df48af7840af31b89bfbe3ae002f6258ec6d8c6e Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
auf Bestellung 932 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.83 EUR
32+2.27 EUR
35+2.06 EUR
74+0.97 EUR
79+0.92 EUR
Mindestbestellmenge: 26
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FOD3120SDV FOD3120SDV ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AE90275D877C7E27&compId=FOD3120SD.pdf?ci_sign=df48af7840af31b89bfbe3ae002f6258ec6d8c6e Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
Turn-on time: 60ns
Turn-off time: 60ns
Produkt ist nicht verfügbar
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MC74AC132DG MC74AC132DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE598B9E9389CADA11C&compId=MC74AC132DG.PDF?ci_sign=ce61ccd4472383711336117bf60a2304e63cb90f Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: AC
Produkt ist nicht verfügbar
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BCP56-16T1G BCP56-16T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999CF4B32505C3820&compId=BCP56_ser.pdf?ci_sign=d85bc22652e5b082e5bd197e542106c378022550 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 4036 Stücke:
Lieferzeit 14-21 Tag (e)
109+0.66 EUR
169+0.42 EUR
229+0.31 EUR
258+0.28 EUR
562+0.13 EUR
596+0.12 EUR
Mindestbestellmenge: 109
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BCP56-16T3G BCP56-16T3G ONSEMI bcp56t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 2720 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
154+0.46 EUR
225+0.32 EUR
400+0.18 EUR
424+0.17 EUR
2000+0.16 EUR
Mindestbestellmenge: 112
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SBCP56-16T1G SBCP56-16T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999CF4B32505C3820&compId=BCP56_ser.pdf?ci_sign=d85bc22652e5b082e5bd197e542106c378022550 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SBCP56-16T3G SBCP56-16T3G ONSEMI bcp56t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Produkt ist nicht verfügbar
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2N7002K 2N7002K ONSEMI 2n7002k-fsc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 5108 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
353+0.2 EUR
539+0.13 EUR
643+0.11 EUR
1025+0.07 EUR
1083+0.066 EUR
1500+0.063 EUR
Mindestbestellmenge: 209
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2N7002KT1G 2N7002KT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E544751EA760D2&compId=2N7002K.PDF?ci_sign=9f984722eb7170f70bb3a1a94f008378c8683372 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.38A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7835 Stücke:
Lieferzeit 14-21 Tag (e)
629+0.11 EUR
962+0.074 EUR
1027+0.07 EUR
1289+0.055 EUR
1471+0.049 EUR
1946+0.037 EUR
3402+0.021 EUR
3598+0.02 EUR
Mindestbestellmenge: 629
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2N7000-D74Z pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E58CC03277C0D2&compId=2N7000_2N7002_NDS7002A.PDF?ci_sign=0fd71bfe4fa8b72f11e37dab9fdebe94573526a9
2N7000-D74Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N7000-D75Z pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E58CC03277C0D2&compId=2N7000_2N7002_NDS7002A.PDF?ci_sign=0fd71bfe4fa8b72f11e37dab9fdebe94573526a9
2N7000-D75Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
auf Bestellung 2009 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
192+0.37 EUR
243+0.29 EUR
348+0.21 EUR
486+0.15 EUR
516+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 122
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2N7000BU pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8D7D6C8403D5EA&compId=2N7000TA.pdf?ci_sign=570549f6b8c8a8b920ec72fe65fd2392834410d1
2N7000BU
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Produkt ist nicht verfügbar
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2N7000TA pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8D7D6C8403D5EA&compId=2N7000TA.pdf?ci_sign=570549f6b8c8a8b920ec72fe65fd2392834410d1
2N7000TA
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
202+0.35 EUR
241+0.3 EUR
261+0.27 EUR
Mindestbestellmenge: 162
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BS170 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD94EFB7E48E4FC0D3&compId=BS170%2CMMBF170.PDF?ci_sign=3412997d5f321b4eb67995ad7ee0b0f5718b3379
BS170
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 14840 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
300+0.24 EUR
382+0.19 EUR
491+0.15 EUR
625+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 209
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BS170-D75Z pVersion=0046&contRep=ZT&docId=005056AB281E1EDD94EFB7E48E4FC0D3&compId=BS170%2CMMBF170.PDF?ci_sign=3412997d5f321b4eb67995ad7ee0b0f5718b3379
BS170-D75Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
Mindestbestellmenge: 84
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BS170-D26Z pVersion=0046&contRep=ZT&docId=005056AB281E1EDD94EFB7E48E4FC0D3&compId=BS170%2CMMBF170.PDF?ci_sign=3412997d5f321b4eb67995ad7ee0b0f5718b3379
BS170-D26Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 2028 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
190+0.38 EUR
226+0.32 EUR
262+0.27 EUR
307+0.23 EUR
491+0.15 EUR
521+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 152
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BS170-D27Z pVersion=0046&contRep=ZT&docId=005056AB281E1EDD94EFB7E48E4FC0D3&compId=BS170%2CMMBF170.PDF?ci_sign=3412997d5f321b4eb67995ad7ee0b0f5718b3379
BS170-D27Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC807-40LT1G description pVersion=0046&contRep=ZT&docId=005056AB82531ED999D2FDE892C0B820&compId=BC807-xxL.pdf?ci_sign=369718e845cd41955b4cea07c403ea15e81c2c56
BC807-40LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 12464 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
625+0.11 EUR
736+0.097 EUR
1083+0.066 EUR
1283+0.056 EUR
1825+0.039 EUR
3572+0.02 EUR
3788+0.019 EUR
Mindestbestellmenge: 500
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BC807-40LT3G bc807-16lt1-d.pdf
BC807-40LT3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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CAT24C08C4ATR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C165F7B20D5&compId=CAT24C01-D.pdf?ci_sign=9104330373643d222b394e72620f652045c3d8e0
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C08C4CTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C165F7C60D5&compId=CAT24C01-D.pdf?ci_sign=3ea1e0de3b7d52e26527ef3c3b1651ba3badaab3
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT24C08C5ATR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79BEB746F60D5&compId=CAT24C01-D.pdf?ci_sign=c3c2446437a0878847a83f5b80cb0be2fcb580c2
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BD14010STU pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA6F24EF38EAE40CE&compId=BD136_138_140.pdf?ci_sign=110b6f88cafbe0e2a7fcb0c0b1b608b4bf5ae0b0
BD14010STU
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Current gain: 63...160
Collector-emitter voltage: 80V
Polarisation: bipolar
Kind of package: tube
Type of transistor: PNP
Mounting: THT
Case: TO126ISO
Power dissipation: 12.5W
Collector current: 1.5A
auf Bestellung 1221 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
73+0.99 EUR
82+0.88 EUR
121+0.59 EUR
128+0.56 EUR
Mindestbestellmenge: 53
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BD140G pVersion=0046&contRep=ZT&docId=005056AB752F1EE786885AC34561C745&compId=BD136G_BD140G.PDF?ci_sign=8552ac78b3b0d24ec607351a4d31550c598ef06f
BD140G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Current gain: 40...250
Collector-emitter voltage: 80V
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
Mounting: THT
Case: TO225
Power dissipation: 12.5W
Collector current: 1.5A
auf Bestellung 179 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
76+0.95 EUR
110+0.65 EUR
116+0.62 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
MMBD1401 mmbd1405-d.pdf
MMBD1401
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 2724 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
575+0.12 EUR
691+0.1 EUR
757+0.095 EUR
953+0.075 EUR
1007+0.071 EUR
1047+0.068 EUR
Mindestbestellmenge: 385
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MMBD1403 mmbd1405-d.pdf
MMBD1403
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Produkt ist nicht verfügbar
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MMBD1404 mmbd1405-d.pdf
MMBD1404
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 844 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
374+0.19 EUR
407+0.18 EUR
528+0.14 EUR
596+0.12 EUR
844+0.084 EUR
Mindestbestellmenge: 313
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MMBD1404A mmbd1405a-d.pdf
MMBD1404A
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Max. off-state voltage: 175V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.6A
Power dissipation: 0.35W
Produkt ist nicht verfügbar
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MMBD1405 mmbd1405-d.pdf FAIR-S-A0002364113-1.pdf?t.download=true&u=5oefqw
MMBD1405
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N3904BU pVersion=0046&contRep=ZT&docId=005056AB752F1EE59EAD0FE9CFD7211C&compId=2N3904BU-DTE.pdf?ci_sign=bb09d5cab5b69cc40aa5854992f942439f1fadc8
2N3904BU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
auf Bestellung 6237 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
281+0.25 EUR
323+0.22 EUR
483+0.15 EUR
577+0.12 EUR
1241+0.058 EUR
1313+0.054 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
2N3904TFR pzt3904-d.pdf
2N3904TFR
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 967 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
562+0.13 EUR
765+0.094 EUR
866+0.083 EUR
967+0.074 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
BSS138L pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90D007811653C0D5&compId=BSS138L.PDF?ci_sign=3b1c6cb55f89c6709af38d9d877a48d80e8ff74d
BSS138L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Drain current: 0.2A
Power dissipation: 0.225W
Pulsed drain current: 0.8A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
Drain-source voltage: 50V
auf Bestellung 11469 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
486+0.15 EUR
619+0.12 EUR
693+0.1 EUR
812+0.088 EUR
1819+0.039 EUR
1924+0.037 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BSS138LT1G pVersion=0046&contRep=ZT&docId=005056AB90B41EDB81F5DA269A88E0C7&compId=BSS138L.PDF?ci_sign=d4e7758a5e7668a7ea517da14f04673491c06f7a
BSS138LT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Drain current: 0.2A
Power dissipation: 0.225W
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
Drain-source voltage: 50V
auf Bestellung 13382 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
404+0.18 EUR
521+0.14 EUR
747+0.096 EUR
908+0.079 EUR
1755+0.041 EUR
1859+0.038 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
BSS138LT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDB81F5DA269A88E0C7&compId=BSS138L.PDF?ci_sign=d4e7758a5e7668a7ea517da14f04673491c06f7a
BSS138LT3G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Drain current: 0.2A
Power dissipation: 0.225W
Pulsed drain current: 0.8A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
Drain-source voltage: 50V
auf Bestellung 11672 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
417+0.17 EUR
589+0.12 EUR
955+0.075 EUR
1211+0.059 EUR
1283+0.056 EUR
10000+0.054 EUR
Mindestbestellmenge: 278
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BSS138W bss138w-d.pdf
BSS138W
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SC70; SOT323
Mounting: SMD
Drain current: 0.21A
Power dissipation: 0.34W
On-state resistance: 5.8Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
Drain-source voltage: 50V
auf Bestellung 3179 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
295+0.24 EUR
360+0.2 EUR
552+0.13 EUR
638+0.11 EUR
827+0.087 EUR
875+0.082 EUR
1500+0.079 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
MMBFJ113 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8B7D2AD995F5EA&compId=J111.pdf?ci_sign=23158dcca2e47f7ef2d19b8846e159bbca0e7d3b
MMBFJ113
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA
Kind of package: reel; tape
Type of transistor: N-JFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 2mA
Gate current: 50mA
Power dissipation: 0.35W
On-state resistance: 100Ω
auf Bestellung 3378 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
240+0.3 EUR
298+0.24 EUR
353+0.2 EUR
410+0.17 EUR
589+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
1N4448TR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CF5A650B2BAE0C7&compId=1N91x_1N4x48.PDF?ci_sign=a4258b07e70007c6a3a8c603a8d2c85f44ec76b5
1N4448TR
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Kind of package: reel; tape
Power dissipation: 0.5W
auf Bestellung 9341 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
583+0.12 EUR
1112+0.064 EUR
1690+0.042 EUR
2033+0.035 EUR
2605+0.027 EUR
3165+0.023 EUR
3876+0.018 EUR
4386+0.016 EUR
4762+0.015 EUR
Mindestbestellmenge: 583
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LM2904DR2G description lm358-d.pdf
LM2904DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Case: SO8
Slew rate: 0.3V/μs
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
Number of channels: 2
auf Bestellung 7472 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
421+0.17 EUR
455+0.16 EUR
591+0.12 EUR
887+0.081 EUR
939+0.076 EUR
2500+0.073 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
FGH40N60SFDTU pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFCDA6C5122C259&compId=FGH40N60SFD.pdf?ci_sign=2c0d510a78f53d439b7ac465468ba47d6ff90201
FGH40N60SFDTU
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 201 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.81 EUR
14+5.48 EUR
21+3.56 EUR
22+3.36 EUR
90+3.33 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
FGH40N60SMD pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFCDC408D444259&compId=FGH40N60SMD.pdf?ci_sign=0ebfad5f1d5a27cf5691c0f6edf47b158174848d
FGH40N60SMD
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.56 EUR
14+5.29 EUR
19+3.78 EUR
20+3.58 EUR
120+3.56 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
FGH40N60UFDTU pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFCE02DE17B4259&compId=FGH40N60UFD.pdf?ci_sign=e2e7f4c0d5faa7c11d312a18c4f8466a13707ecb
FGH40N60UFDTU
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 288 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.22 EUR
28+2.62 EUR
29+2.47 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
FGAF40N60UFDTU pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94EA732797BEA0CE&compId=FGAF40N60UFD.pdf?ci_sign=da65e30aed0b2d6dbd164eba13db74250abcad66
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC78LC33NTRG pVersion=0046&contRep=ZT&docId=005056AB752F1EE89192C382DF65F3D3&compId=MC78LCxx.pdf?ci_sign=7019e40ae0e8bf91b9863955cb642b881805fa12
MC78LC33NTRG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 53mV
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
auf Bestellung 2850 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
159+0.45 EUR
180+0.4 EUR
182+0.39 EUR
187+0.38 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
BCP53-10T1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999CF6447155D9820&compId=BCP53_ser.pdf?ci_sign=8f342b934d9aeecf2d8169dc8963df0889f15590
BCP53-10T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
152+0.47 EUR
214+0.33 EUR
253+0.29 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
BCP53-16T1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999CF6447155D9820&compId=BCP53_ser.pdf?ci_sign=8f342b934d9aeecf2d8169dc8963df0889f15590
BCP53-16T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 1103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
158+0.45 EUR
176+0.41 EUR
269+0.27 EUR
376+0.19 EUR
400+0.18 EUR
414+0.17 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
LM2574DW-ADJR2G LM2574.pdf
LM2574DW-ADJR2G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: SO16-W
Mounting: SMD
Topology: buck
Number of channels: 1
Kind of package: reel; tape
auf Bestellung 791 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.72 EUR
33+2.17 EUR
40+1.82 EUR
42+1.72 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
LM2574N-5G description LM2574.pdf
LM2574N-5G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LM2574N-ADJG LM2574.pdf
LM2574N-ADJG
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
auf Bestellung 699 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
48+1.5 EUR
53+1.36 EUR
56+1.29 EUR
100+1.26 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
BC856BDW1T1G bc856bdw1t1-d.pdf
BC856BDW1T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 649 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
589+0.12 EUR
649+0.11 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BC856BDW1T3G bc856bdw1t1-d.pdf
BC856BDW1T3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC856BLT1G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d
BC856BLT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 10960 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
555+0.13 EUR
834+0.086 EUR
1257+0.057 EUR
1516+0.047 EUR
2284+0.031 EUR
3876+0.018 EUR
4099+0.017 EUR
Mindestbestellmenge: 555
Im Einkaufswagen  Stück im Wert von  UAH
BC856BLT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d
BC856BLT3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC856BM3T5G bc856bm3-d.pdf
BC856BM3T5G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2481 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
472+0.15 EUR
538+0.13 EUR
969+0.074 EUR
2000+0.036 EUR
2119+0.034 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
MMBT2222ALT1G pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBDBC7BD075F280C7&compId=MMBT2222.PDF?ci_sign=6b9501ec688ce9f05a229b3a4a1c53ed2d4b2134
MMBT2222ALT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 7340 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
770+0.093 EUR
1413+0.051 EUR
2050+0.035 EUR
2348+0.03 EUR
5209+0.014 EUR
5495+0.013 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
MMBT2222ALT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBDBC7BD075F280C7&compId=MMBT2222.PDF?ci_sign=6b9501ec688ce9f05a229b3a4a1c53ed2d4b2134
MMBT2222ALT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBT2222ATT1G pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBDBC7E8C047480C7&compId=MMBT2222ATT1G.PDF?ci_sign=468f837cfbcf448a06c6516e77b2adfdcd2f2cce
MMBT2222ATT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBT2222AWT1G description pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB9DE0C14E190143&compId=MMBT2222AWT1G.pdf?ci_sign=1309ef5d9c266313b6366cd4fd67d918c9674f9c
MMBT2222AWT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 6744 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
642+0.11 EUR
969+0.074 EUR
1177+0.061 EUR
1812+0.039 EUR
3031+0.024 EUR
3206+0.022 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
MMBT2222AWT3G pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB9DE0C14E190143&compId=MMBT2222AWT1G.pdf?ci_sign=1309ef5d9c266313b6366cd4fd67d918c9674f9c
MMBT2222AWT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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1N5408RLG description pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FB8749461F840D6&compId=1N540x.PDF?ci_sign=edfd626bae2e7653ac1fbc632df6258f6bde519c
1N5408RLG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; reel,tape; Ifsm: 200A; DO27; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
auf Bestellung 1838 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
355+0.2 EUR
428+0.17 EUR
468+0.15 EUR
538+0.13 EUR
575+0.12 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
FOD3120 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C014D34DDE0D6&compId=FOD3120.pdf?ci_sign=40b9fdfef6df5491cf88ae337df062e3ed947fbc
FOD3120
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; DIP8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 35kV/μs
auf Bestellung 656 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.3 EUR
40+1.8 EUR
49+1.47 EUR
52+1.4 EUR
100+1.34 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
FOD3120SD pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AE90275D877C7E27&compId=FOD3120SD.pdf?ci_sign=df48af7840af31b89bfbe3ae002f6258ec6d8c6e
FOD3120SD
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
auf Bestellung 932 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.83 EUR
32+2.27 EUR
35+2.06 EUR
74+0.97 EUR
79+0.92 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
FOD3120SDV pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AE90275D877C7E27&compId=FOD3120SD.pdf?ci_sign=df48af7840af31b89bfbe3ae002f6258ec6d8c6e
FOD3120SDV
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
Turn-on time: 60ns
Turn-off time: 60ns
Produkt ist nicht verfügbar
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MC74AC132DG pVersion=0046&contRep=ZT&docId=005056AB752F1EE598B9E9389CADA11C&compId=MC74AC132DG.PDF?ci_sign=ce61ccd4472383711336117bf60a2304e63cb90f
MC74AC132DG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCP56-16T1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999CF4B32505C3820&compId=BCP56_ser.pdf?ci_sign=d85bc22652e5b082e5bd197e542106c378022550
BCP56-16T1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 4036 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
169+0.42 EUR
229+0.31 EUR
258+0.28 EUR
562+0.13 EUR
596+0.12 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
BCP56-16T3G bcp56t1-d.pdf
BCP56-16T3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 2720 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
154+0.46 EUR
225+0.32 EUR
400+0.18 EUR
424+0.17 EUR
2000+0.16 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
SBCP56-16T1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999CF4B32505C3820&compId=BCP56_ser.pdf?ci_sign=d85bc22652e5b082e5bd197e542106c378022550
SBCP56-16T1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBCP56-16T3G bcp56t1-d.pdf
SBCP56-16T3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N7002K 2n7002k-fsc-d.pdf
2N7002K
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 5108 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
353+0.2 EUR
539+0.13 EUR
643+0.11 EUR
1025+0.07 EUR
1083+0.066 EUR
1500+0.063 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E544751EA760D2&compId=2N7002K.PDF?ci_sign=9f984722eb7170f70bb3a1a94f008378c8683372
2N7002KT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.38A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7835 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
629+0.11 EUR
962+0.074 EUR
1027+0.07 EUR
1289+0.055 EUR
1471+0.049 EUR
1946+0.037 EUR
3402+0.021 EUR
3598+0.02 EUR
Mindestbestellmenge: 629
Im Einkaufswagen  Stück im Wert von  UAH
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