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2SK2740 2SK2740 Rohm Semiconductor 2SK2740.pdf Description: MOSFET N-CH 600V 7A TO220FN
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FN
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 10 V
Drain to Source Voltage (Vdss): 600 V
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QS5U12TR QS5U12TR Rohm Semiconductor datasheet?p=QS5U12&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 2A TSMT5
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT5
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
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QS5U13TR QS5U13TR Rohm Semiconductor datasheet?p=QS5U13&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 2A TSMT5
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT5
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
FET Feature: Schottky Diode (Isolated)
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QS5U16TR QS5U16TR Rohm Semiconductor datasheet?p=QS5U16&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 2A TSMT5
Supplier Device Package: TSMT5
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 900mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
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QS5U17TR QS5U17TR Rohm Semiconductor datasheet?p=QS5U17&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 2A TSMT5
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT5
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 900mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
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QS5U21TR QS5U21TR Rohm Semiconductor qs5u21tr-e.pdf Description: MOSFET P-CH 20V 1.5A TSMT5
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QS5U23TR QS5U23TR Rohm Semiconductor qs5u23tr-e.pdf Description: MOSFET P-CH 20V 1.5A TSMT5
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QS5U26TR QS5U26TR Rohm Semiconductor qs5u26tr-e.pdf Description: MOSFET P-CH 20V 1.5A TSMT5
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QS5U27TR QS5U27TR Rohm Semiconductor datasheet?p=QS5U27&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 1.5A TSMT5
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT5
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
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QS5U28TR QS5U28TR Rohm Semiconductor datasheet?p=QS5U28&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 2A TSMT5
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT5
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QS6J3TR QS6J3TR Rohm Semiconductor QS6J3.pdf Description: MOSFET 2P-CH 20V 1.5A TSMT6
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QS6M3TR QS6M3TR Rohm Semiconductor QS6M3.pdf Description: MOSFET N/P-CH 30V/20V 1.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
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QS6M4TR QS6M4TR Rohm Semiconductor datasheet?p=QS6M4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 30V/20V 1.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
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QS6U22TR QS6U22TR Rohm Semiconductor qs6u22tr-e.pdf Description: MOSFET P-CH 20V 1.5A TSMT6
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QS6U24TR QS6U24TR Rohm Semiconductor datasheet?p=QS6U24&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 10 V
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RDN100N20 RDN100N20 Rohm Semiconductor RDN100N20.pdf Description: MOSFET N-CH 200V 10A TO220FN
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FN
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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RDN120N25 RDN120N25 Rohm Semiconductor RDN120N25.pdf Description: MOSFET N-CH 250V 12A TO-220FN
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RHK003N06T146 RHK003N06T146 Rohm Semiconductor RHK003N06.pdf Description: MOSFET N-CH 60V 300MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V
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RHK005N03T146 RHK005N03T146 Rohm Semiconductor RHK005N03.pdf Description: MOSFET N-CH 30V 500MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
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RHP020N06T100 RHP020N06T100 Rohm Semiconductor datasheet?p=RHP020N06&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 10 V
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RHP030N03T100 RHP030N03T100 Rohm Semiconductor datasheet?p=RHP030N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 3A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
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RHU003N03T106 RHU003N03T106 Rohm Semiconductor RHU003N03.pdf Description: MOSFET N-CH 30V 300MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: UMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V
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RJK005N03T146 RJK005N03T146 Rohm Semiconductor RJK005N03.pdf Description: MOSFET N-CH 30V 500MA SMT3
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 580mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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RJP020N06T100 RJP020N06T100 Rohm Semiconductor datasheet?p=RJP020N06&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
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RJU002N06T106 RJU002N06T106 Rohm Semiconductor RJU002N06.pdf Description: MOSFET N-CH 60V 200MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 200mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: UMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 10 V
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RJU003N03T106 RJU003N03T106 Rohm Semiconductor RJU003N03.pdf Description: MOSFET N-CH 30V 300MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 300mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: UMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V
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RSE002P03TL RSE002P03TL Rohm Semiconductor RSE002P03 Description: MOSFET P-CH 30V 200MA SOT416
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RSF014N03TL RSF014N03TL Rohm Semiconductor rsf014n03tl-e.pdf Description: MOSFET N-CH 30V 1.4A TUMT3
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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RSM002P03T2L RSM002P03T2L Rohm Semiconductor rsm002p03-e.pdf Description: MOSFET P-CH 30V 200MA VMT3
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: VMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
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RSQ045N03TR RSQ045N03TR Rohm Semiconductor rsq045n03.pdf Description: MOSFET N-CH 30V 4.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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RSR015P03TL RSR015P03TL Rohm Semiconductor RSR015P03.pdf Description: MOSFET P-CH 30V 1.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
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RSR020P03TL RSR020P03TL Rohm Semiconductor RSR020P03.pdf Description: MOSFET P-CH 30V 2A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
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RSR025P03TL RSR025P03TL Rohm Semiconductor RSR025P03.pdf Description: MOSFET P-CH 30V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
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RSU002P03T106 RSU002P03T106 Rohm Semiconductor datasheet?p=RSU002P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 250MA UMT3
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: UMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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RTE002P02TL RTE002P02TL Rohm Semiconductor RTE002P02.pdf Description: MOSFET P-CH 20V 200MA EMT3
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RTF010P02TL RTF010P02TL Rohm Semiconductor RTF010P02.pdf Description: MOSFET P-CH 20V 1A TUMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TUMT3
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RTF015N03TL RTF015N03TL Rohm Semiconductor datasheet?p=RTF015N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 1.5A TUMT3
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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RTF015P02TL RTF015P02TL Rohm Semiconductor RTF015P02.pdf Description: MOSFET P-CH 20V 1.5A TUMT3
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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RTF020P02TL RTF020P02TL Rohm Semiconductor rtf020p02.pdf Description: MOSFET P-CH 20V 2A TUMT3
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RTF025N03TL RTF025N03TL Rohm Semiconductor datasheet?p=RTF025N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 2.5A TUMT3
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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RTL035N03TR RTL035N03TR Rohm Semiconductor datasheet?p=RTL035N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 3.5A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
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RTQ020N03TR RTQ020N03TR Rohm Semiconductor datasheet?p=RTQ020N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 2A TSMT6
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
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RTQ025P02TR RTQ025P02TR Rohm Semiconductor RTQ025P02.pdf Description: MOSFET P-CH 20V 2.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V
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RTQ030P02TR RTQ030P02TR Rohm Semiconductor RTQ030P02.pdf Description: MOSFET P-CH 20V 3A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
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RTQ035N03TR RTQ035N03TR Rohm Semiconductor Description: MOSFET N-CH 30V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
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RTQ035P02TR RTQ035P02TR Rohm Semiconductor RTQ035P02.pdf Description: MOSFET P-CH 20V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
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RTQ040P02TR RTQ040P02TR Rohm Semiconductor RTQ040P02.pdf Description: MOSFET P-CH 20V 4A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
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RTQ045N03TR RTQ045N03TR Rohm Semiconductor description Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
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RTR020P02TL RTR020P02TL Rohm Semiconductor RTR020P02.pdf Description: MOSFET P-CH 20V 2A TSMT3
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RTR025N03TL RTR025N03TL Rohm Semiconductor datasheet?p=RTR025N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
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RTR025P02TL RTR025P02TL Rohm Semiconductor RTR025P02.pdf Description: MOSFET P-CH 20V 2.5A TSMT3
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RTR030P02TL RTR030P02TL Rohm Semiconductor RTR030P02%20.pdf Description: MOSFET P-CH 20V 3A TSMT3
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RTU002P02T106 RTU002P02T106 Rohm Semiconductor RTU002P02_Spec.pdf Description: MOSFET P-CH 20V 0.25A SOT-323
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SP8M10TB SP8M10TB Rohm Semiconductor datasheet?p=SP8M10&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 30V 7A/4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SH8M4TB1 SH8M4TB1 Rohm Semiconductor datasheet?p=SH8M4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 30V 9A/7A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9A, 7A
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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SP8M5TB SP8M5TB Rohm Semiconductor datasheet?p=SP8M5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 30V 6A/7A 8SOP
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A, 7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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SP8M6TB SP8M6TB Rohm Semiconductor datasheet?p=SP8M6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 30V 5A/3.5A 8SOP
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A, 3.5A
Drain to Source Voltage (Vdss): 30V
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SP8M7TB SP8M7TB Rohm Semiconductor SP8M7.pdf Description: MOSFET N/P-CH 30V 5A/7A 8SOP
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A, 7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
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SP8M8TB SP8M8TB Rohm Semiconductor SP8M8.pdf Description: MOSFET N/P-CH 30V 6A/4.5A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SP8M9TB SP8M9TB Rohm Semiconductor SP8M9.pdf Description: MOSFET N/P-CH 30V 9A/5A 8SOP
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9A, 5A
Drain to Source Voltage (Vdss): 30V
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2SK2740 2SK2740.pdf
2SK2740
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A TO220FN
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FN
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 10 V
Drain to Source Voltage (Vdss): 600 V
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QS5U12TR datasheet?p=QS5U12&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS5U12TR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT5
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT5
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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QS5U13TR datasheet?p=QS5U13&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS5U13TR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT5
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT5
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
FET Feature: Schottky Diode (Isolated)
Produkt ist nicht verfügbar
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QS5U16TR datasheet?p=QS5U16&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS5U16TR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT5
Supplier Device Package: TSMT5
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 900mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
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QS5U17TR datasheet?p=QS5U17&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS5U17TR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT5
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT5
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 900mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
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QS5U21TR qs5u21tr-e.pdf
QS5U21TR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 1.5A TSMT5
Produkt ist nicht verfügbar
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QS5U23TR qs5u23tr-e.pdf
QS5U23TR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 1.5A TSMT5
Produkt ist nicht verfügbar
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QS5U26TR qs5u26tr-e.pdf
QS5U26TR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 1.5A TSMT5
Produkt ist nicht verfügbar
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QS5U27TR datasheet?p=QS5U27&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS5U27TR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 1.5A TSMT5
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT5
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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QS5U28TR datasheet?p=QS5U28&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS5U28TR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TSMT5
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT5
Produkt ist nicht verfügbar
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QS6J3TR QS6J3.pdf
QS6J3TR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 1.5A TSMT6
Produkt ist nicht verfügbar
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QS6M3TR QS6M3.pdf
QS6M3TR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V 1.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
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3000+0.4 EUR
9000+0.36 EUR
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QS6M4TR datasheet?p=QS6M4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS6M4TR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V 1.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
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3000+0.42 EUR
6000+0.38 EUR
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QS6U22TR qs6u22tr-e.pdf
QS6U22TR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 1.5A TSMT6
Produkt ist nicht verfügbar
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QS6U24TR datasheet?p=QS6U24&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS6U24TR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 10 V
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
3000+0.4 EUR
6000+0.38 EUR
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RDN100N20 RDN100N20.pdf
RDN100N20
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 10A TO220FN
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FN
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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RDN120N25 RDN120N25.pdf
RDN120N25
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 12A TO-220FN
Produkt ist nicht verfügbar
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RHK003N06T146 RHK003N06.pdf
RHK003N06T146
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 300MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V
Produkt ist nicht verfügbar
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RHK005N03T146 RHK005N03.pdf
RHK005N03T146
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 500MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
Produkt ist nicht verfügbar
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RHP020N06T100 datasheet?p=RHP020N06&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RHP020N06T100
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 10 V
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RHP030N03T100 datasheet?p=RHP030N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RHP030N03T100
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 3A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
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RHU003N03T106 RHU003N03.pdf
RHU003N03T106
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 300MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: UMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V
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RJK005N03T146 RJK005N03.pdf
RJK005N03T146
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 500MA SMT3
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 580mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
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6000+0.18 EUR
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RJP020N06T100 datasheet?p=RJP020N06&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RJP020N06T100
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
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RJU002N06T106 RJU002N06.pdf
RJU002N06T106
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 200MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 200mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: UMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 10 V
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RJU003N03T106 RJU003N03.pdf
RJU003N03T106
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 300MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 300mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: UMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V
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RSE002P03TL RSE002P03
RSE002P03TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 200MA SOT416
Produkt ist nicht verfügbar
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RSF014N03TL rsf014n03tl-e.pdf
RSF014N03TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 1.4A TUMT3
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RSM002P03T2L rsm002p03-e.pdf
RSM002P03T2L
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 200MA VMT3
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: VMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
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RSQ045N03TR rsq045n03.pdf
RSQ045N03TR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RSR015P03TL RSR015P03.pdf
RSR015P03TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 1.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
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RSR020P03TL RSR020P03.pdf
RSR020P03TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 2A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RSR025P03TL RSR025P03.pdf
RSR025P03TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RSU002P03T106 datasheet?p=RSU002P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RSU002P03T106
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 250MA UMT3
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: UMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
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3000+0.23 EUR
6000+0.21 EUR
9000+0.2 EUR
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RTE002P02TL RTE002P02.pdf
RTE002P02TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 200MA EMT3
Produkt ist nicht verfügbar
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RTF010P02TL RTF010P02.pdf
RTF010P02TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 1A TUMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TUMT3
Produkt ist nicht verfügbar
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RTF015N03TL datasheet?p=RTF015N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTF015N03TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 1.5A TUMT3
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RTF015P02TL RTF015P02.pdf
RTF015P02TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 1.5A TUMT3
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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RTF020P02TL rtf020p02.pdf
RTF020P02TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TUMT3
Produkt ist nicht verfügbar
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RTF025N03TL datasheet?p=RTF025N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTF025N03TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TUMT3
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
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3000+0.48 EUR
6000+0.44 EUR
9000+0.4 EUR
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RTL035N03TR datasheet?p=RTL035N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTL035N03TR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
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3000+0.35 EUR
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RTQ020N03TR datasheet?p=RTQ020N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTQ020N03TR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT6
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
auf Bestellung 3000 Stücke:
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RTQ025P02TR RTQ025P02.pdf
RTQ025P02TR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 2.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V
Produkt ist nicht verfügbar
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RTQ030P02TR RTQ030P02.pdf
RTQ030P02TR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 3A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Produkt ist nicht verfügbar
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RTQ035N03TR
RTQ035N03TR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
Produkt ist nicht verfügbar
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RTQ035P02TR RTQ035P02.pdf
RTQ035P02TR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Produkt ist nicht verfügbar
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RTQ040P02TR RTQ040P02.pdf
RTQ040P02TR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 4A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
Produkt ist nicht verfügbar
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RTQ045N03TR description
RTQ045N03TR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
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RTR020P02TL RTR020P02.pdf
RTR020P02TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TSMT3
auf Bestellung 9000 Stücke:
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RTR025N03TL datasheet?p=RTR025N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR025N03TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Produkt ist nicht verfügbar
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RTR025P02TL RTR025P02.pdf
RTR025P02TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 2.5A TSMT3
Produkt ist nicht verfügbar
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RTR030P02TL RTR030P02%20.pdf
RTR030P02TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 3A TSMT3
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AnzahlPrivatkunde
3000+0.46 EUR
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RTU002P02T106 RTU002P02_Spec.pdf
RTU002P02T106
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 0.25A SOT-323
Produkt ist nicht verfügbar
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SP8M10TB datasheet?p=SP8M10&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M10TB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 7A/4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
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SH8M4TB1 datasheet?p=SH8M4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8M4TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/7A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9A, 7A
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar
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SP8M5TB datasheet?p=SP8M5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M5TB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 6A/7A 8SOP
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A, 7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar
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SP8M6TB datasheet?p=SP8M6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M6TB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A/3.5A 8SOP
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A, 3.5A
Drain to Source Voltage (Vdss): 30V
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SP8M7TB SP8M7.pdf
SP8M7TB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A/7A 8SOP
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A, 7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Produkt ist nicht verfügbar
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SP8M8TB SP8M8.pdf
SP8M8TB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 6A/4.5A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SP8M9TB SP8M9.pdf
SP8M9TB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/5A 8SOP
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9A, 5A
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar
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