Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (106292) > Seite 1772 nach 1772
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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MCR10SEQPF5101 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 5.1kΩ; 0805; 250mW; ±1%; 2x1.25x0.55mm Type of resistor: thick film Resistance: 5.1kΩ Case - inch: 0805 Case - mm: 2012 Power: 0.25W Tolerance: ±1% Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Body dimensions: 2x1.25x0.55mm |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3268 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MCR18SEQPF1601 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 1.6kΩ; 1206; 400mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Resistance: 1.6kΩ Case - inch: 1206 Case - mm: 3216 Power: 0.4W Tolerance: ±1% Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2778 Stücke Im Einkaufswagen Stück im Wert von UAH |
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ESR18EZPF1601 | ROHM SEMICONDUCTOR |
 Category: SMD resistorsDescription: Resistor: thick film; 1.6kΩ; SMD; 1206; 500mW; ±1%; 3.2x1.6x0.55mm Type of resistor: thick film Resistance: 1.6kΩ Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.5W Tolerance: ±1% Operating temperature: -55...155°C Conform to the norm: AEC-Q200 Body dimensions: 3.2x1.6x0.55mm |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2778 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SFR18EZPF1101 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 1.1kΩ; 1206; 250mW; ±1%; SFR; 3.2x1.6x0.55mm Type of resistor: thick film Resistance: 1.1kΩ Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±1% Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Body dimensions: 3.2x1.6x0.55mm Conform to the norm: AEC-Q200 Manufacturer series: SFR |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2315 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMBZ36VALYFHT116 | ROHM SEMICONDUCTOR |
Category: Protection diodes - arrays Description: 780mA; 0.04kW; SOT23-3; Ch: 2 Peak pulse power dissipation: 40W Max. off-state voltage: 28V Max. forward impulse current: 780mA Case: SOT23-3 Mounting: SMD Leakage current: 5nA Capacitance: 32pF Number of channels: 2 Application: automotive industry |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 625 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMBZ18VALYFHT116 | ROHM SEMICONDUCTOR |
Category: Protection diodes - arrays Description: 1.6A; 0.04kW; unidirectional,common anode; SOT23-3; Ch: 2 Max. forward impulse current: 1.6A Peak pulse power dissipation: 40W Semiconductor structure: common anode; unidirectional Mounting: SMD Case: SOT23-3 Max. off-state voltage: 14.5V Leakage current: 5nA Number of channels: 2 Application: automotive industry Capacitance: 60pF |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 625 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMBZ18VALYT116 | ROHM SEMICONDUCTOR |
Category: Protection diodes - arrays Description: 1.6A; 0.04kW; bidirectional; SOT23-3; Ch: 2 Max. forward impulse current: 1.6A Peak pulse power dissipation: 40W Semiconductor structure: bidirectional Mounting: SMD Case: SOT23-3 Max. off-state voltage: 14.5V Leakage current: 5nA Number of channels: 2 Capacitance: 60pF |
auf Bestellung 4033 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 731 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMBZ5V6ALT116 | ROHM SEMICONDUCTOR |
Category: Protection diodes - arrays Description: 5.32V; 3A; 0.024kW; unidirectional; SOT23-3; Ch: 2 Breakdown voltage: 5.32V Max. forward impulse current: 3A Peak pulse power dissipation: 24W Semiconductor structure: unidirectional Mounting: SMD Case: SOT23-3 Max. off-state voltage: 3V Number of channels: 2 Capacitance: 0.23nF |
auf Bestellung 11707 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 897 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMBZ5V6ALYT116 | ROHM SEMICONDUCTOR |
Category: Protection diodes - arrays Description: 3A; 0.024kW; unidirectional,common anode; SOT23-3; Ch: 2 Max. forward impulse current: 3A Peak pulse power dissipation: 24W Semiconductor structure: common anode; unidirectional Mounting: SMD Case: SOT23-3 Max. off-state voltage: 3V Leakage current: 5µA Number of channels: 2 Capacitance: 0.23nF |
auf Bestellung 1495 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 731 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RGT50TM65DGC9 | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM Mounting: SMD Power dissipation: 23W Gate charge: 49nC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 75A Type of transistor: IGBT Turn-on time: 65ns Kind of package: tube Case: TO220NFM Turn-off time: 210ns Gate-emitter voltage: ±30V Collector current: 13A Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| RGTH50TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 87W; TO247-3 Mounting: THT Power dissipation: 87W Gate charge: 49nC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 100A Type of transistor: IGBT Turn-on time: 65ns Kind of package: tube Case: TO247-3 Turn-off time: 172ns Gate-emitter voltage: ±30V Collector current: 25A Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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SCS110AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220AC; 83W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.7V Max. load current: 42A Max. forward impulse current: 160A Power dissipation: 83W Kind of package: tube Heatsink thickness: max. 1.27mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RB540VM-30TE-17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 200mA Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward impulse current: 1A Mounting: SMD Leakage current: 0.5µA Max. forward voltage: 0.45V Load current: 0.2A |
auf Bestellung 8374 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1356 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RB540VM-40TE-17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 200mA Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward impulse current: 1A Mounting: SMD Leakage current: 15µA Max. forward voltage: 0.71V Load current: 0.2A |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1462 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RFN1VWM2STFTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 930mV; Ifsm: 20A Load current: 1A Leakage current: 1µA Type of diode: rectifying Reverse recovery time: 25ns Mounting: SMD Max. forward impulse current: 20A Max. forward voltage: 0.93V Max. off-state voltage: 200V |
auf Bestellung 1065 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 395 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RFN1VWM2STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 930mV; Ifsm: 20A Load current: 1A Max. load current: 1A Leakage current: 1µA Type of diode: rectifying Reverse recovery time: 25ns Mounting: SMD Max. forward impulse current: 20A Max. forward voltage: 0.93V Max. off-state voltage: 200V |
auf Bestellung 2941 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 460 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RFN2VWM2STFTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 25ns; Ufmax: 990mV; Ifsm: 20A Load current: 2A Semiconductor structure: single diode Leakage current: 1µA Type of diode: rectifying Reverse recovery time: 25ns Mounting: SMD Max. forward impulse current: 20A Max. forward voltage: 0.99V Max. off-state voltage: 200V |
auf Bestellung 2331 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 235 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RFN2VWM2STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 25ns; Ufmax: 990mV; Ifsm: 20A Load current: 2A Max. load current: 2A Semiconductor structure: single diode Leakage current: 1µA Type of diode: rectifying Reverse recovery time: 25ns Mounting: SMD Max. forward impulse current: 20A Max. forward voltage: 0.99V Max. off-state voltage: 200V |
auf Bestellung 2763 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 259 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MCR10EZPJ202 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 2kΩ; 0805; 125mW; ±5%; -55÷155°C Type of resistor: thick film Resistance: 2kΩ Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±5% Operating temperature: -55...155°C Conform to the norm: AEC-Q200 |
auf Bestellung 9288 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 9260 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SDR10EZPJ202 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 2kΩ; 0805; 660mW,667mW; ±5%; 2x1.25x0.55mm Type of resistor: thick film Resistance: 2kΩ Case - inch: 0805 Case - mm: 2012 Power: 0.66W; 667mW Tolerance: ±5% Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C Body dimensions: 2x1.25x0.55mm Conform to the norm: AEC-Q200 |
auf Bestellung 4710 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2646 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DTA114YKAT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DTA114YE3HZGTL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Mounting: SMD Frequency: 250MHz Base resistor: 10kΩ Current gain: 68 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1462 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DTA114YEBTL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Mounting: SMD Frequency: 250MHz Base resistor: 10kΩ |
auf Bestellung 4783 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1588 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DTA114YMFHAT2L | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Mounting: SMD Frequency: 250MHz Base resistor: 10kΩ |
auf Bestellung 6800 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1389 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DTA114YU3HZGT106 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 100mA; SOT323F; 10kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT323F Mounting: SMD Frequency: 250MHz Base resistor: 10kΩ |
auf Bestellung 3479 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1588 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RRQ045P03HZGTR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; -30V; -4.5A; 1.25W; TSMT6 Type of transistor: P-MOSFET Drain-source voltage: -30V Drain current: -4.5A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 284 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 175 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RJU002N06FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3 Mounting: SMD Pulsed drain current: 0.8A Power dissipation: 0.2W Polarisation: unipolar Drain current: 0.2A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: UMT3 On-state resistance: 3.1Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| RHU002N06FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3 Mounting: SMD Pulsed drain current: 0.8A Power dissipation: 0.2W Gate charge: 2.2nC Polarisation: unipolar Drain current: 0.2A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: UMT3 On-state resistance: 4Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| RSU002P03T106 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -0.4A; 200mW Mounting: SMD Pulsed drain current: -400mA Power dissipation: 0.2W Polarisation: unipolar Drain current: -0.2A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: UMT3 On-state resistance: 2.4Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MCR18EZPJ472 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 4.7kΩ; SMD; 1206; 250mW; ±5%; -55÷155°C Type of resistor: thick film Resistance: 4.7kΩ Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±5% Operating temperature: -55...155°C Conform to the norm: AEC-Q200 |
auf Bestellung 25014 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3969 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BD4844FVE-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1 Mounting: SMD Supply voltage: 950mV DC...10V DC Manufacturer series: BD48 Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: -40...105°C Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 4.4V Case: VSOF5 Kind of integrated circuit: voltage detector Number of channels: 1 Kind of RESET output: open drain |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BD4844G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Mounting: SMD Supply voltage: 950mV DC...10V DC Manufacturer series: BD48 Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: -40...105°C Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 4.4V Case: SSOP5 Kind of integrated circuit: voltage detector Number of channels: 1 Kind of RESET output: open drain |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MCR10SEQPF5101 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 5.1kΩ; 0805; 250mW; ±1%; 2x1.25x0.55mm
Type of resistor: thick film
Resistance: 5.1kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.55mm
Category: SMD resistors
Description: Resistor: thick film; 5.1kΩ; 0805; 250mW; ±1%; 2x1.25x0.55mm
Type of resistor: thick film
Resistance: 5.1kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.55mm
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| MCR18SEQPF1601 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 1.6kΩ; 1206; 400mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 1.6kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.4W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 1.6kΩ; 1206; 400mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 1.6kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.4W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| ESR18EZPF1601 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 1.6kΩ; SMD; 1206; 500mW; ±1%; 3.2x1.6x0.55mm
Type of resistor: thick film
Resistance: 1.6kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.5W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 3.2x1.6x0.55mm
Category: SMD resistors
Description: Resistor: thick film; 1.6kΩ; SMD; 1206; 500mW; ±1%; 3.2x1.6x0.55mm
Type of resistor: thick film
Resistance: 1.6kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.5W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 3.2x1.6x0.55mm
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
| SFR18EZPF1101 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 1.1kΩ; 1206; 250mW; ±1%; SFR; 3.2x1.6x0.55mm
Type of resistor: thick film
Resistance: 1.1kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Body dimensions: 3.2x1.6x0.55mm
Conform to the norm: AEC-Q200
Manufacturer series: SFR
Category: SMD resistors
Description: Resistor: thick film; 1.1kΩ; 1206; 250mW; ±1%; SFR; 3.2x1.6x0.55mm
Type of resistor: thick film
Resistance: 1.1kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Body dimensions: 3.2x1.6x0.55mm
Conform to the norm: AEC-Q200
Manufacturer series: SFR
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBZ36VALYFHT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Protection diodes - arrays
Description: 780mA; 0.04kW; SOT23-3; Ch: 2
Peak pulse power dissipation: 40W
Max. off-state voltage: 28V
Max. forward impulse current: 780mA
Case: SOT23-3
Mounting: SMD
Leakage current: 5nA
Capacitance: 32pF
Number of channels: 2
Application: automotive industry
Category: Protection diodes - arrays
Description: 780mA; 0.04kW; SOT23-3; Ch: 2
Peak pulse power dissipation: 40W
Max. off-state voltage: 28V
Max. forward impulse current: 780mA
Case: SOT23-3
Mounting: SMD
Leakage current: 5nA
Capacitance: 32pF
Number of channels: 2
Application: automotive industry
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBZ18VALYFHT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Protection diodes - arrays
Description: 1.6A; 0.04kW; unidirectional,common anode; SOT23-3; Ch: 2
Max. forward impulse current: 1.6A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; unidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 14.5V
Leakage current: 5nA
Number of channels: 2
Application: automotive industry
Capacitance: 60pF
Category: Protection diodes - arrays
Description: 1.6A; 0.04kW; unidirectional,common anode; SOT23-3; Ch: 2
Max. forward impulse current: 1.6A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; unidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 14.5V
Leakage current: 5nA
Number of channels: 2
Application: automotive industry
Capacitance: 60pF
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBZ18VALYT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Protection diodes - arrays
Description: 1.6A; 0.04kW; bidirectional; SOT23-3; Ch: 2
Max. forward impulse current: 1.6A
Peak pulse power dissipation: 40W
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 14.5V
Leakage current: 5nA
Number of channels: 2
Capacitance: 60pF
Category: Protection diodes - arrays
Description: 1.6A; 0.04kW; bidirectional; SOT23-3; Ch: 2
Max. forward impulse current: 1.6A
Peak pulse power dissipation: 40W
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 14.5V
Leakage current: 5nA
Number of channels: 2
Capacitance: 60pF
auf Bestellung 4033 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBZ5V6ALT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Protection diodes - arrays
Description: 5.32V; 3A; 0.024kW; unidirectional; SOT23-3; Ch: 2
Breakdown voltage: 5.32V
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 3V
Number of channels: 2
Capacitance: 0.23nF
Category: Protection diodes - arrays
Description: 5.32V; 3A; 0.024kW; unidirectional; SOT23-3; Ch: 2
Breakdown voltage: 5.32V
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 3V
Number of channels: 2
Capacitance: 0.23nF
auf Bestellung 11707 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBZ5V6ALYT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Protection diodes - arrays
Description: 3A; 0.024kW; unidirectional,common anode; SOT23-3; Ch: 2
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; unidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 3V
Leakage current: 5µA
Number of channels: 2
Capacitance: 0.23nF
Category: Protection diodes - arrays
Description: 3A; 0.024kW; unidirectional,common anode; SOT23-3; Ch: 2
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; unidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 3V
Leakage current: 5µA
Number of channels: 2
Capacitance: 0.23nF
auf Bestellung 1495 Stücke:
Lieferzeit 14-21 Tag (e)
| RGT50TM65DGC9 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM
Mounting: SMD
Power dissipation: 23W
Gate charge: 49nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 75A
Type of transistor: IGBT
Turn-on time: 65ns
Kind of package: tube
Case: TO220NFM
Turn-off time: 210ns
Gate-emitter voltage: ±30V
Collector current: 13A
Collector-emitter voltage: 650V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM
Mounting: SMD
Power dissipation: 23W
Gate charge: 49nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 75A
Type of transistor: IGBT
Turn-on time: 65ns
Kind of package: tube
Case: TO220NFM
Turn-off time: 210ns
Gate-emitter voltage: ±30V
Collector current: 13A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RGTH50TS65DGC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 87W; TO247-3
Mounting: THT
Power dissipation: 87W
Gate charge: 49nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 100A
Type of transistor: IGBT
Turn-on time: 65ns
Kind of package: tube
Case: TO247-3
Turn-off time: 172ns
Gate-emitter voltage: ±30V
Collector current: 25A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 87W; TO247-3
Mounting: THT
Power dissipation: 87W
Gate charge: 49nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 100A
Type of transistor: IGBT
Turn-on time: 65ns
Kind of package: tube
Case: TO247-3
Turn-off time: 172ns
Gate-emitter voltage: ±30V
Collector current: 25A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SCS110AGC |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220AC; 83W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 42A
Max. forward impulse current: 160A
Power dissipation: 83W
Kind of package: tube
Heatsink thickness: max. 1.27mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220AC; 83W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 42A
Max. forward impulse current: 160A
Power dissipation: 83W
Kind of package: tube
Heatsink thickness: max. 1.27mm
Produkt ist nicht verfügbar
Im Einkaufswagen
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| RB540VM-30TE-17 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 200mA
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 1A
Mounting: SMD
Leakage current: 0.5µA
Max. forward voltage: 0.45V
Load current: 0.2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 200mA
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 1A
Mounting: SMD
Leakage current: 0.5µA
Max. forward voltage: 0.45V
Load current: 0.2A
auf Bestellung 8374 Stücke:
Lieferzeit 14-21 Tag (e)
| RB540VM-40TE-17 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 200mA
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 1A
Mounting: SMD
Leakage current: 15µA
Max. forward voltage: 0.71V
Load current: 0.2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 200mA
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 1A
Mounting: SMD
Leakage current: 15µA
Max. forward voltage: 0.71V
Load current: 0.2A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| RFN1VWM2STFTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 930mV; Ifsm: 20A
Load current: 1A
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.93V
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 930mV; Ifsm: 20A
Load current: 1A
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.93V
Max. off-state voltage: 200V
auf Bestellung 1065 Stücke:
Lieferzeit 14-21 Tag (e)
| RFN1VWM2STR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 930mV; Ifsm: 20A
Load current: 1A
Max. load current: 1A
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.93V
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 930mV; Ifsm: 20A
Load current: 1A
Max. load current: 1A
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.93V
Max. off-state voltage: 200V
auf Bestellung 2941 Stücke:
Lieferzeit 14-21 Tag (e)
| RFN2VWM2STFTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; Ufmax: 990mV; Ifsm: 20A
Load current: 2A
Semiconductor structure: single diode
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.99V
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; Ufmax: 990mV; Ifsm: 20A
Load current: 2A
Semiconductor structure: single diode
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.99V
Max. off-state voltage: 200V
auf Bestellung 2331 Stücke:
Lieferzeit 14-21 Tag (e)
| RFN2VWM2STR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; Ufmax: 990mV; Ifsm: 20A
Load current: 2A
Max. load current: 2A
Semiconductor structure: single diode
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.99V
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; Ufmax: 990mV; Ifsm: 20A
Load current: 2A
Max. load current: 2A
Semiconductor structure: single diode
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.99V
Max. off-state voltage: 200V
auf Bestellung 2763 Stücke:
Lieferzeit 14-21 Tag (e)
| MCR10EZPJ202 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 2kΩ; 0805; 125mW; ±5%; -55÷155°C
Type of resistor: thick film
Resistance: 2kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 2kΩ; 0805; 125mW; ±5%; -55÷155°C
Type of resistor: thick film
Resistance: 2kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
auf Bestellung 9288 Stücke:
Lieferzeit 14-21 Tag (e)
| SDR10EZPJ202 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 2kΩ; 0805; 660mW,667mW; ±5%; 2x1.25x0.55mm
Type of resistor: thick film
Resistance: 2kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.66W; 667mW
Tolerance: ±5%
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Body dimensions: 2x1.25x0.55mm
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 2kΩ; 0805; 660mW,667mW; ±5%; 2x1.25x0.55mm
Type of resistor: thick film
Resistance: 2kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.66W; 667mW
Tolerance: ±5%
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Body dimensions: 2x1.25x0.55mm
Conform to the norm: AEC-Q200
auf Bestellung 4710 Stücke:
Lieferzeit 14-21 Tag (e)
| DTA114YKAT146 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA114YE3HZGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
Current gain: 68
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
Current gain: 68
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| DTA114YEBTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
auf Bestellung 4783 Stücke:
Lieferzeit 14-21 Tag (e)
| DTA114YMFHAT2L |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
auf Bestellung 6800 Stücke:
Lieferzeit 14-21 Tag (e)
| DTA114YU3HZGT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; SOT323F; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323F
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; SOT323F; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323F
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
auf Bestellung 3479 Stücke:
Lieferzeit 14-21 Tag (e)
| RRQ045P03HZGTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; -30V; -4.5A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -4.5A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; -30V; -4.5A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -4.5A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
| RJU002N06FRAT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: UMT3
On-state resistance: 3.1Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: UMT3
On-state resistance: 3.1Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RHU002N06FRAT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Gate charge: 2.2nC
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: UMT3
On-state resistance: 4Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Gate charge: 2.2nC
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: UMT3
On-state resistance: 4Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSU002P03T106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -0.4A; 200mW
Mounting: SMD
Pulsed drain current: -400mA
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: -0.2A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: UMT3
On-state resistance: 2.4Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -0.4A; 200mW
Mounting: SMD
Pulsed drain current: -400mA
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: -0.2A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: UMT3
On-state resistance: 2.4Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCR18EZPJ472 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 4.7kΩ; SMD; 1206; 250mW; ±5%; -55÷155°C
Type of resistor: thick film
Resistance: 4.7kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 4.7kΩ; SMD; 1206; 250mW; ±5%; -55÷155°C
Type of resistor: thick film
Resistance: 4.7kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
auf Bestellung 25014 Stücke:
Lieferzeit 14-21 Tag (e)
| BD4844FVE-TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1
Mounting: SMD
Supply voltage: 950mV DC...10V DC
Manufacturer series: BD48
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...105°C
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 4.4V
Case: VSOF5
Kind of integrated circuit: voltage detector
Number of channels: 1
Kind of RESET output: open drain
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1
Mounting: SMD
Supply voltage: 950mV DC...10V DC
Manufacturer series: BD48
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...105°C
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 4.4V
Case: VSOF5
Kind of integrated circuit: voltage detector
Number of channels: 1
Kind of RESET output: open drain
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
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| BD4844G-TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Supply voltage: 950mV DC...10V DC
Manufacturer series: BD48
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...105°C
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 4.4V
Case: SSOP5
Kind of integrated circuit: voltage detector
Number of channels: 1
Kind of RESET output: open drain
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Supply voltage: 950mV DC...10V DC
Manufacturer series: BD48
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...105°C
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 4.4V
Case: SSOP5
Kind of integrated circuit: voltage detector
Number of channels: 1
Kind of RESET output: open drain
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH