Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (106346) > Seite 1773 nach 1773
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| RFN1VWM2STFTR | ROHM SEMICONDUCTOR |
 Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 930mV; Ifsm: 20A Load current: 1A Leakage current: 1µA Type of diode: rectifying Reverse recovery time: 25ns Mounting: SMD Max. forward impulse current: 20A Max. forward voltage: 0.93V Max. off-state voltage: 200V |
auf Bestellung 1065 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 395 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RFN1VWM2STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 930mV; Ifsm: 20A Load current: 1A Max. load current: 1A Leakage current: 1µA Type of diode: rectifying Reverse recovery time: 25ns Mounting: SMD Max. forward impulse current: 20A Max. forward voltage: 0.93V Max. off-state voltage: 200V |
auf Bestellung 2941 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 460 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RFN2VWM2STFTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 25ns; Ufmax: 990mV; Ifsm: 20A Load current: 2A Semiconductor structure: single diode Leakage current: 1µA Type of diode: rectifying Reverse recovery time: 25ns Mounting: SMD Max. forward impulse current: 20A Max. forward voltage: 0.99V Max. off-state voltage: 200V |
auf Bestellung 2331 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 235 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RFN2VWM2STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 25ns; Ufmax: 990mV; Ifsm: 20A Load current: 2A Max. load current: 2A Semiconductor structure: single diode Leakage current: 1µA Type of diode: rectifying Reverse recovery time: 25ns Mounting: SMD Max. forward impulse current: 20A Max. forward voltage: 0.99V Max. off-state voltage: 200V |
auf Bestellung 2763 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 259 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MCR10EZPJ202 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 2kΩ; 0805; 125mW; ±5%; -55÷155°C Type of resistor: thick film Resistance: 2kΩ Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±5% Operating temperature: -55...155°C Conform to the norm: AEC-Q200 |
auf Bestellung 9288 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 9260 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SDR10EZPJ202 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 2kΩ; 0805; 660mW,667mW; ±5%; 2x1.25x0.55mm Type of resistor: thick film Resistance: 2kΩ Case - inch: 0805 Case - mm: 2012 Power: 0.66W; 667mW Tolerance: ±5% Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C Body dimensions: 2x1.25x0.55mm Conform to the norm: AEC-Q200 |
auf Bestellung 4710 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2646 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DTA114YKAT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DTA114YE3HZGTL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Mounting: SMD Frequency: 250MHz Base resistor: 10kΩ Current gain: 68 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1462 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DTA114YEBTL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Mounting: SMD Frequency: 250MHz Base resistor: 10kΩ |
auf Bestellung 4783 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1588 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DTA114YMFHAT2L | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Mounting: SMD Frequency: 250MHz Base resistor: 10kΩ |
auf Bestellung 6800 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1389 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DTA114YU3HZGT106 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 100mA; SOT323F; 10kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT323F Mounting: SMD Frequency: 250MHz Base resistor: 10kΩ |
auf Bestellung 3479 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1588 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RRQ045P03HZGTR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; -30V; -4.5A; 1.25W; TSMT6 Type of transistor: P-MOSFET Drain-source voltage: -30V Drain current: -4.5A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 284 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 175 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RJU002N06FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3 Mounting: SMD Pulsed drain current: 0.8A Power dissipation: 0.2W Polarisation: unipolar Drain current: 0.2A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: UMT3 On-state resistance: 3.1Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| RHU002N06FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3 Mounting: SMD Pulsed drain current: 0.8A Power dissipation: 0.2W Gate charge: 2.2nC Polarisation: unipolar Drain current: 0.2A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: UMT3 On-state resistance: 4Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| RSU002P03T106 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -0.4A; 200mW Mounting: SMD Pulsed drain current: -400mA Power dissipation: 0.2W Polarisation: unipolar Drain current: -0.2A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: UMT3 On-state resistance: 2.4Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MCR18EZPJ472 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 4.7kΩ; SMD; 1206; 250mW; ±5%; -55÷155°C Type of resistor: thick film Resistance: 4.7kΩ Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±5% Operating temperature: -55...155°C Conform to the norm: AEC-Q200 |
auf Bestellung 25014 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3969 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BD4844FVE-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1 Mounting: SMD Supply voltage: 950mV DC...10V DC Manufacturer series: BD48 Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: -40...105°C Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 4.4V Case: VSOF5 Kind of integrated circuit: voltage detector Number of channels: 1 Kind of RESET output: open drain |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BD4844G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Mounting: SMD Supply voltage: 950mV DC...10V DC Manufacturer series: BD48 Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: -40...105°C Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 4.4V Case: SSOP5 Kind of integrated circuit: voltage detector Number of channels: 1 Kind of RESET output: open drain |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DTB123ECHZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 500mA; 200mW; SOT23-3; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23-3 Mounting: SMD Frequency: 200MHz Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1356 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DTB123ECT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 200mW; SOT23-3; R1: 2.2kΩ; R2: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Power dissipation: 0.2W Case: SOT23-3 Mounting: SMD Frequency: 200MHz Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
auf Bestellung 3674 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 806 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BU4551BF-E2 | ROHM SEMICONDUCTOR |
Category: Integrated circuits - Unclassified Description: BU4551BF-E2 |
auf Bestellung 1093 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 112 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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ESR10EZPF2003 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 200kΩ; 0805; 400mW; ±1%; 2x1.25x0.55mm Type of resistor: thick film Resistance: 200kΩ Case - inch: 0805 Case - mm: 2012 Power: 0.4W Tolerance: ±1% Operating temperature: -55...155°C Body dimensions: 2x1.25x0.55mm Conform to the norm: AEC-Q200 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3268 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SFR10EZPF2003 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 200kΩ; 0805; 125mW; ±1%; SFR; 2x1.25x0.55mm Type of resistor: thick film Resistance: 200kΩ Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±1% Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Body dimensions: 2x1.25x0.55mm Conform to the norm: AEC-Q200 Manufacturer series: SFR |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2924 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SCS210AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; 78W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.55V Max. load current: 44A Max. forward impulse current: 150A Power dissipation: 78W Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SCS210AGC17 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; Ufmax: 1.55V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Max. forward voltage: 1.55V Max. forward impulse current: 38A Leakage current: 0.2mA Capacitance: 365pF |
auf Bestellung 787 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 24 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RHP030N03T100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 10A Gate charge: 6.5nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RFN1VWM2STFTR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 930mV; Ifsm: 20A
Load current: 1A
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.93V
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 930mV; Ifsm: 20A
Load current: 1A
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.93V
Max. off-state voltage: 200V
auf Bestellung 1065 Stücke:
Lieferzeit 14-21 Tag (e)
| RFN1VWM2STR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 930mV; Ifsm: 20A
Load current: 1A
Max. load current: 1A
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.93V
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 930mV; Ifsm: 20A
Load current: 1A
Max. load current: 1A
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.93V
Max. off-state voltage: 200V
auf Bestellung 2941 Stücke:
Lieferzeit 14-21 Tag (e)
| RFN2VWM2STFTR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; Ufmax: 990mV; Ifsm: 20A
Load current: 2A
Semiconductor structure: single diode
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.99V
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; Ufmax: 990mV; Ifsm: 20A
Load current: 2A
Semiconductor structure: single diode
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.99V
Max. off-state voltage: 200V
auf Bestellung 2331 Stücke:
Lieferzeit 14-21 Tag (e)
| RFN2VWM2STR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; Ufmax: 990mV; Ifsm: 20A
Load current: 2A
Max. load current: 2A
Semiconductor structure: single diode
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.99V
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; Ufmax: 990mV; Ifsm: 20A
Load current: 2A
Max. load current: 2A
Semiconductor structure: single diode
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.99V
Max. off-state voltage: 200V
auf Bestellung 2763 Stücke:
Lieferzeit 14-21 Tag (e)
| MCR10EZPJ202 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 2kΩ; 0805; 125mW; ±5%; -55÷155°C
Type of resistor: thick film
Resistance: 2kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 2kΩ; 0805; 125mW; ±5%; -55÷155°C
Type of resistor: thick film
Resistance: 2kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
auf Bestellung 9288 Stücke:
Lieferzeit 14-21 Tag (e)
| SDR10EZPJ202 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 2kΩ; 0805; 660mW,667mW; ±5%; 2x1.25x0.55mm
Type of resistor: thick film
Resistance: 2kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.66W; 667mW
Tolerance: ±5%
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Body dimensions: 2x1.25x0.55mm
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 2kΩ; 0805; 660mW,667mW; ±5%; 2x1.25x0.55mm
Type of resistor: thick film
Resistance: 2kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.66W; 667mW
Tolerance: ±5%
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Body dimensions: 2x1.25x0.55mm
Conform to the norm: AEC-Q200
auf Bestellung 4710 Stücke:
Lieferzeit 14-21 Tag (e)
| DTA114YKAT146 |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA114YE3HZGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
Current gain: 68
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
Current gain: 68
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| DTA114YEBTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
auf Bestellung 4783 Stücke:
Lieferzeit 14-21 Tag (e)
| DTA114YMFHAT2L |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
auf Bestellung 6800 Stücke:
Lieferzeit 14-21 Tag (e)
| DTA114YU3HZGT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; SOT323F; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323F
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; SOT323F; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323F
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
auf Bestellung 3479 Stücke:
Lieferzeit 14-21 Tag (e)
| RRQ045P03HZGTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; -30V; -4.5A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -4.5A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; -30V; -4.5A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -4.5A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
| RJU002N06FRAT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: UMT3
On-state resistance: 3.1Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: UMT3
On-state resistance: 3.1Ω
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| RHU002N06FRAT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Gate charge: 2.2nC
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: UMT3
On-state resistance: 4Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Gate charge: 2.2nC
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: UMT3
On-state resistance: 4Ω
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| RSU002P03T106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -0.4A; 200mW
Mounting: SMD
Pulsed drain current: -400mA
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: -0.2A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: UMT3
On-state resistance: 2.4Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -0.4A; 200mW
Mounting: SMD
Pulsed drain current: -400mA
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: -0.2A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: UMT3
On-state resistance: 2.4Ω
Produkt ist nicht verfügbar
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| MCR18EZPJ472 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 4.7kΩ; SMD; 1206; 250mW; ±5%; -55÷155°C
Type of resistor: thick film
Resistance: 4.7kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 4.7kΩ; SMD; 1206; 250mW; ±5%; -55÷155°C
Type of resistor: thick film
Resistance: 4.7kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
auf Bestellung 25014 Stücke:
Lieferzeit 14-21 Tag (e)
| BD4844FVE-TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1
Mounting: SMD
Supply voltage: 950mV DC...10V DC
Manufacturer series: BD48
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...105°C
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 4.4V
Case: VSOF5
Kind of integrated circuit: voltage detector
Number of channels: 1
Kind of RESET output: open drain
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1
Mounting: SMD
Supply voltage: 950mV DC...10V DC
Manufacturer series: BD48
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...105°C
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 4.4V
Case: VSOF5
Kind of integrated circuit: voltage detector
Number of channels: 1
Kind of RESET output: open drain
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| BD4844G-TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Supply voltage: 950mV DC...10V DC
Manufacturer series: BD48
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...105°C
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 4.4V
Case: SSOP5
Kind of integrated circuit: voltage detector
Number of channels: 1
Kind of RESET output: open drain
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Supply voltage: 950mV DC...10V DC
Manufacturer series: BD48
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...105°C
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 4.4V
Case: SSOP5
Kind of integrated circuit: voltage detector
Number of channels: 1
Kind of RESET output: open drain
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DTB123ECHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 500mA; 200mW; SOT23-3; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23-3
Mounting: SMD
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 500mA; 200mW; SOT23-3; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23-3
Mounting: SMD
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| DTB123ECT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 200mW; SOT23-3; R1: 2.2kΩ; R2: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Power dissipation: 0.2W
Case: SOT23-3
Mounting: SMD
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 200mW; SOT23-3; R1: 2.2kΩ; R2: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Power dissipation: 0.2W
Case: SOT23-3
Mounting: SMD
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
auf Bestellung 3674 Stücke:
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| BU4551BF-E2 |
|
auf Bestellung 1093 Stücke:
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| ESR10EZPF2003 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 200kΩ; 0805; 400mW; ±1%; 2x1.25x0.55mm
Type of resistor: thick film
Resistance: 200kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.4W
Tolerance: ±1%
Operating temperature: -55...155°C
Body dimensions: 2x1.25x0.55mm
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 200kΩ; 0805; 400mW; ±1%; 2x1.25x0.55mm
Type of resistor: thick film
Resistance: 200kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.4W
Tolerance: ±1%
Operating temperature: -55...155°C
Body dimensions: 2x1.25x0.55mm
Conform to the norm: AEC-Q200
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| SFR10EZPF2003 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 200kΩ; 0805; 125mW; ±1%; SFR; 2x1.25x0.55mm
Type of resistor: thick film
Resistance: 200kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Body dimensions: 2x1.25x0.55mm
Conform to the norm: AEC-Q200
Manufacturer series: SFR
Category: SMD resistors
Description: Resistor: thick film; 200kΩ; 0805; 125mW; ±1%; SFR; 2x1.25x0.55mm
Type of resistor: thick film
Resistance: 200kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Body dimensions: 2x1.25x0.55mm
Conform to the norm: AEC-Q200
Manufacturer series: SFR
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| SCS210AGC |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; 78W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 44A
Max. forward impulse current: 150A
Power dissipation: 78W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; 78W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 44A
Max. forward impulse current: 150A
Power dissipation: 78W
Kind of package: tube
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| SCS210AGC17 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; Ufmax: 1.55V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Max. forward voltage: 1.55V
Max. forward impulse current: 38A
Leakage current: 0.2mA
Capacitance: 365pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; Ufmax: 1.55V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Max. forward voltage: 1.55V
Max. forward impulse current: 38A
Leakage current: 0.2mA
Capacitance: 365pF
auf Bestellung 787 Stücke:
Lieferzeit 14-21 Tag (e)
| RHP030N03T100 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 10A
Gate charge: 6.5nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 10A
Gate charge: 6.5nC
Kind of package: reel; tape
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