Suchergebnisse für "10n8" : > 60

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0500588000-10-N8 0500588000-10-N8 Molex Description: 10" PRE-CRIMP 1852 BROWN
Packaging: Bulk
Contact Finish: Tin
Color: Brown
Length: 10.0" (254.0mm)
Wire Gauge: 28 AWG
Contact End: Socket to Cable (Round)
Contact Finish Thickness: 35.4µin (0.90µm)
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
30+0.92 EUR
50+0.87 EUR
100+0.8 EUR
250+0.73 EUR
Mindestbestellmenge: 17
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0500798000-10-N8 0500798000-10-N8 Molex Description: 10" PRE-CRIMP 1852 BROWN
Packaging: Bulk
Contact Finish: Tin
Color: Brown
Length: 10.0" (254.0mm)
Wire Gauge: 28 AWG
Contact End: Socket to Cable (Round)
Contact Finish Thickness: 35.4µin (0.90µm)
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
30+0.91 EUR
50+0.86 EUR
Mindestbestellmenge: 17
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0500798000-10-N8-D 0500798000-10-N8-D Molex Description: 10" PRE-CRIMP 1852 BROWN
Packaging: Bulk
Contact Finish: Tin
Color: Brown
Length: 10.0" (254.0mm)
Wire Gauge: 28 AWG
Contact End: Socket to Socket
Contact Finish Thickness: 35.4µin (0.90µm)
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.12 EUR
30+1.04 EUR
50+1 EUR
100+0.95 EUR
Mindestbestellmenge: 16
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1210N822J500CT 1210N822J500CT Walsin WTC_MLCC_General_Purpose.pdf Multilayer Ceramic Capacitors MLCC - SMD/SMT 8200pF +-5% 50V
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.74 EUR
10+0.49 EUR
100+0.31 EUR
500+0.25 EUR
1000+0.23 EUR
3000+0.18 EUR
24000+0.17 EUR
Mindestbestellmenge: 4
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A10N86 A10N86 Hoffman Enclosures, Inc. Spec-00260.pdf Description: BOX STEEL GRAY 10"L X 7.99"W
Features: Wall Mount
Packaging: Bulk
Color: Gray
Size / Dimension: 10.000" L x 7.992" W (254.00mm x 203.00mm)
Material: Metal, Steel
Thickness: 16 Gauge
Height: 5.984" (152.00mm)
Design: Hinged Door, Lid
Ratings: IP30, NEMA 1, UL-50, 50E
Container Type: Box
Area (L x W): 80.0in² (516cm²)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+209.16 EUR
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A10N8P A10N8P Hoffman Enclosures, Inc. Spec-00310.pdf Description: PANEL N1 8.25X6.25
Features: Mounting Hardware
Packaging: Bulk
Color: White
Size / Dimension: 8.250" L x 6.250" W (209.55mm x 158.75mm)
For Use With/Related Products: Enclosures
Material: Metal, Steel
Type: Panel
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
1+28.42 EUR
5+24.3 EUR
10+22.71 EUR
25+20.78 EUR
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FDBL0210N80 FDBL0210N80 onsemi fdbl0210n80-d.pdf Description: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
auf Bestellung 3424 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.49 EUR
10+6.01 EUR
100+5.06 EUR
Mindestbestellmenge: 3
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FDBL0210N80 FDBL0210N80 onsemi / Fairchild FDBL0210N80-D.pdf MOSFETs Code D IMR
auf Bestellung 3808 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.39 EUR
10+5.9 EUR
100+5.09 EUR
1000+4.7 EUR
2000+4.29 EUR
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FDBL0210N80 FDBL0210N80 onsemi fdbl0210n80-d.pdf Description: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+4.14 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
FQA10N80 FQA10N80 Fairchild Semiconductor FAIRS24245-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 9.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4.9A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 14941 Stücke:
Lieferzeit 10-14 Tag (e)
170+2.66 EUR
Mindestbestellmenge: 170
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FQAF10N80 FQAF10N80 Fairchild Semiconductor FAIRS17098-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 6.7A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 3.35A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 7549 Stücke:
Lieferzeit 10-14 Tag (e)
145+3.11 EUR
Mindestbestellmenge: 145
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FRW 10 N - 8 OHM FRW 10 N - 8 OHM Visaton GmbH & Co. KG FRW%2010%20N_2032.pdf Description: SPEAKER 8OHM 10W TOP PORT 86DB
Packaging: Bulk
Size / Dimension: 4.016" L x 4.016" W (102.00mm x 102.00mm)
Shape: Round, Square Frame
Termination: Quick Connect
Frequency - Self Resonant: 120Hz
Port Location: Top
Height - Seated (Max): 1.504" (38.20mm)
Part Status: Active
Impedance: 8 Ohms
Power - Max: 20 W
Power - Rated: 10 W
Frequency Range: 80 Hz ~ 17 kHz
Efficiency - dBA: 86.00
Efficiency - Testing: 1W/1M
Efficiency - Type: Sound Pressure Level (SPL)
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.23 EUR
10+16.79 EUR
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GC210N80FE GC210N80FE Goford Semiconductor GC210N80FE.pdf Description: MOSFET,N-CH,800V,17A,51W,TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 10V
Power Dissipation (Max): 51W
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 380 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.9 EUR
Mindestbestellmenge: 2000
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GC210N80FE GC210N80FE Goford Semiconductor GC210N80FE.pdf Description: MOSFET N-CH 800V ESD 17A 51W TO-
Packaging: Tube
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 380 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.34 EUR
10+4.18 EUR
Mindestbestellmenge: 3
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IXFA10N80P IXFA10N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3202DD9D8B820&compId=IXFA(H%2CP%2CQ)10N80P.pdf?ci_sign=74d432002548a9e884f59b77ee568fc4a0192e9f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.13 EUR
16+4.48 EUR
22+3.35 EUR
50+3.3 EUR
Mindestbestellmenge: 14
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IXFA10N80P IXFA10N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3202DD9D8B820&compId=IXFA(H%2CP%2CQ)10N80P.pdf?ci_sign=74d432002548a9e884f59b77ee568fc4a0192e9f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 264 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.13 EUR
16+4.48 EUR
22+3.35 EUR
50+3.3 EUR
Mindestbestellmenge: 14
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IXFA10N80P IXFA10N80P IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_10N80P_Datasheet.PDF MOSFETs 10 Amps 800V 1.1 Rds
auf Bestellung 9039 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.41 EUR
10+3.84 EUR
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IXFA10N80P IXFA10N80P IXYS littelfuse-discrete-mosfets-ixf-10n80p-datasheet?assetguid=a565a5d2-4577-4a3a-8c98-1b06bc0768c1 Description: MOSFET N-CH 800V 10A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 29606 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.55 EUR
50+3.53 EUR
100+3.5 EUR
500+3.33 EUR
1000+3.18 EUR
Mindestbestellmenge: 3
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IXFH10N80P IXFH10N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3202DD9D8B820&compId=IXFA(H%2CP%2CQ)10N80P.pdf?ci_sign=74d432002548a9e884f59b77ee568fc4a0192e9f Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
auf Bestellung 273 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.08 EUR
17+4.26 EUR
Mindestbestellmenge: 15
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IXFH10N80P IXFH10N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3202DD9D8B820&compId=IXFA(H%2CP%2CQ)10N80P.pdf?ci_sign=74d432002548a9e884f59b77ee568fc4a0192e9f Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 273 Stücke:
Lieferzeit 7-14 Tag (e)
15+5.08 EUR
17+4.26 EUR
Mindestbestellmenge: 15
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IXFH10N80P IXFH10N80P IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_10N80P_Datasheet.PDF MOSFETs 10 Amps 800V 1.1 Rds
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.53 EUR
10+4.95 EUR
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IXFH10N80P IXFH10N80P IXYS littelfuse-discrete-mosfets-ixf-10n80p-datasheet?assetguid=a565a5d2-4577-4a3a-8c98-1b06bc0768c1 Description: MOSFET N-CH 800V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.67 EUR
Mindestbestellmenge: 3
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IXFN110N85X IXFN110N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA717BF78FC3820&compId=IXFN110N85X.pdf?ci_sign=85a84830f40ac335953053a978c96cf3d1863395 Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 110A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 33mΩ
Kind of channel: enhancement
Pulsed drain current: 220A
Gate charge: 425nC
Reverse recovery time: 205ns
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
1+90.7 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFN110N85X IXFN110N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA717BF78FC3820&compId=IXFN110N85X.pdf?ci_sign=85a84830f40ac335953053a978c96cf3d1863395 Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 110A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 33mΩ
Kind of channel: enhancement
Pulsed drain current: 220A
Gate charge: 425nC
Reverse recovery time: 205ns
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
1+90.7 EUR
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IXFN110N85X IXFN110N85X IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Ultra_Junction_IXFN110N85X_Datasheet.PDF MOSFET Modules 850V X-Class HiPerFE Power MOSFET
auf Bestellung 241 Stücke:
Lieferzeit 10-14 Tag (e)
1+110 EUR
10+102.94 EUR
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IXFN110N85X IXFN110N85X IXYS IXFN110N85X%20data%20sheet.pdf Description: MOSFET N-CH 850V 110A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 55A, 10V
Power Dissipation (Max): 1170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V
auf Bestellung 246 Stücke:
Lieferzeit 10-14 Tag (e)
1+109.72 EUR
10+92.47 EUR
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IXFP10N80P IXFP10N80P IXYS littelfuse-discrete-mosfets-ixf-10n80p-datasheet?assetguid=a565a5d2-4577-4a3a-8c98-1b06bc0768c1 Description: MOSFET N-CH 800V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.45 EUR
50+4.51 EUR
100+4.42 EUR
Mindestbestellmenge: 3
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IXFP10N80P IXFP10N80P IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_10N80P_Datasheet.PDF MOSFETs 10 Amps 800V 1.1 Rds
auf Bestellung 292 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.29 EUR
10+4.79 EUR
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SC 10 N - 8 OHM SC 10 N - 8 OHM Visaton GmbH & Co. KG SC%2010%20N.pdf Description: SPEAKER 8OHM TOP PORT 90DB
Packaging: Bulk
Size / Dimension: 4.094" Dia (104.00mm)
Shape: Round
Type: General Purpose
Technology: Magnetic
Frequency - Self Resonant: 1.7kHz
Port Location: Top
Height - Seated (Max): 1.437" (36.50mm)
Part Status: Active
Impedance: 8 Ohms
Frequency Range: 1 kHz ~ 20 kHz
Efficiency - dBA: 90.00
Efficiency - Testing: 1W/1M
Efficiency - Type: Sound Pressure Level (SPL)
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1+40.48 EUR
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SSF10N80A Fairchild Semiconductor FAIRS06924-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
auf Bestellung 1381 Stücke:
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STD110N8F6 STMicroelectronics en.DM00151073.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 80A; 167W; DPAK; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 167W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 150nC
Electrical mounting: SMT
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.1 EUR
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STD110N8F6 STD110N8F6 STMicroelectronics en.DM00151073.pdf Description: MOSFET N-CH 80V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
auf Bestellung 1651 Stücke:
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100+1.33 EUR
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STD110N8F6 STD110N8F6 STMicroelectronics en.DM00151073.pdf MOSFETs N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK packa
auf Bestellung 7358 Stücke:
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2+1.42 EUR
10+1.34 EUR
100+1.31 EUR
500+1.28 EUR
1000+1.26 EUR
2500+1.12 EUR
5000+1.09 EUR
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STF10N80K5 STF10N80K5 STMicroelectronics en.DM00122529.pdf MOSFETs N-channel 800 V, 0.470 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP packag
auf Bestellung 642 Stücke:
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2+2.41 EUR
10+2.11 EUR
500+2.04 EUR
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5000+1.94 EUR
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STF10N80K5 STF10N80K5 STMicroelectronics en.DM00122529.pdf Description: MOSFET N-CH 800V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 100 V
auf Bestellung 685 Stücke:
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7+2.62 EUR
50+2.18 EUR
100+2.17 EUR
500+2.09 EUR
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STFU10N80K5 STFU10N80K5 STMicroelectronics en.DM00122529.pdf MOSFETs N-channel 800 V, 0.470 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP ultra
auf Bestellung 986 Stücke:
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1+5.88 EUR
10+3.84 EUR
100+2.83 EUR
500+2.53 EUR
1000+2.02 EUR
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STH10N80K5-2AG STH10N80K5-2AG STMicroelectronics sth10n80k5-2ag.pdf Description: MOSFET N-CH 800V 8A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 680mOhm @ 4A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 567 Stücke:
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3+7.09 EUR
10+4.7 EUR
100+3.51 EUR
500+3.11 EUR
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STH10N80K5-2AG STH10N80K5-2AG STMicroelectronics sth10n80k5-2ag.pdf MOSFETs Automotive-grade N-channel 800 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a
auf Bestellung 1264 Stücke:
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1+7.08 EUR
10+4.7 EUR
100+3.59 EUR
500+3.13 EUR
1000+2.69 EUR
2000+2.66 EUR
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STO-01T-110N-8 STO-01T-110N-8 JST Commercial eTAB_ON_IN_CHAIN.pdf Terminals TAB-ON TERMINAL STO-110 SERIES
auf Bestellung 33267 Stücke:
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19+0.15 EUR
40+0.07 EUR
49+0.058 EUR
100+0.051 EUR
250+0.044 EUR
1000+0.039 EUR
2500+0.035 EUR
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STO-41T-110N-8 JST Commercial eTAB-ON-IN-CHAIN.pdf Automotive Connectors TAB-ON CHAIN TERMINAL
auf Bestellung 3891 Stücke:
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19+0.15 EUR
38+0.076 EUR
45+0.063 EUR
100+0.056 EUR
250+0.048 EUR
1000+0.04 EUR
2500+0.039 EUR
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STP10N80K5 STP10N80K5 STMicroelectronics stp10n80k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 22nC
auf Bestellung 12 Stücke:
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12+5.96 EUR
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STP10N80K5 STP10N80K5 STMicroelectronics stp10n80k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 22nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
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12+5.96 EUR
25+3.17 EUR
100+2.86 EUR
500+2.7 EUR
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STP110N8F6 STP110N8F6 STMicroelectronics en.DM00130827.pdf Description: MOSFET N-CH 80V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
auf Bestellung 474 Stücke:
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6+3.45 EUR
50+1.67 EUR
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TN2510N8-G TN2510N8-G MICROCHIP TECHNOLOGY TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 730mA; Idm: 5A; 1.6W; SOT89-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 730mA
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5A
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.59 EUR
47+1.53 EUR
53+1.36 EUR
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TN2510N8-G Microchip TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf Transistor N-Channel MOSFET; 100V; 20V; 15Ohm; 730mA; 1,6W; -55°C ~ 150°C; TN2510N8-G TTN2510n8
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+4.77 EUR
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TN2510N8-G TN2510N8-G MICROCHIP TECHNOLOGY TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 730mA; Idm: 5A; 1.6W; SOT89-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 730mA
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 155 Stücke:
Lieferzeit 7-14 Tag (e)
46+1.59 EUR
47+1.53 EUR
53+1.36 EUR
Mindestbestellmenge: 46
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TN2510N8-G TN2510N8-G Microchip Technology TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf Description: MOSFET N-CH 100V 730MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 730mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 2857 Stücke:
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9+2.04 EUR
25+1.71 EUR
100+1.54 EUR
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TN2510N8-G TN2510N8-G Microchip Technology TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf Description: MOSFET N-CH 100V 730MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 730mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.54 EUR
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TN2510N8-G TN2510N8-G Microchip Technology TN2510_N_Channel_Enhancement_Mode_Vertical_DMOS_FET_Data_Sheet_20005950A.pdf MOSFETs 100V 1.5Ohm
auf Bestellung 4424 Stücke:
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2+2.04 EUR
25+1.71 EUR
100+1.54 EUR
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TP2510N8-G TP2510N8-G MICROCHIP TECHNOLOGY pVersion=0046&contRep=ZT&docId=005056AB752F1ED484E423C0FD6C21EC&compId=tp2510.pdf?ci_sign=c65f57e7f5e08fd7e06791453b60d2edf7de89f8 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -480mA; Idm: -2.5A; 1.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.48A
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -2.5A
auf Bestellung 1641 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
54+1.33 EUR
68+1.06 EUR
100+0.99 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
TP2510N8-G TP2510N8-G MICROCHIP TECHNOLOGY pVersion=0046&contRep=ZT&docId=005056AB752F1ED484E423C0FD6C21EC&compId=tp2510.pdf?ci_sign=c65f57e7f5e08fd7e06791453b60d2edf7de89f8 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -480mA; Idm: -2.5A; 1.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.48A
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -2.5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1641 Stücke:
Lieferzeit 7-14 Tag (e)
49+1.49 EUR
54+1.33 EUR
68+1.06 EUR
100+0.99 EUR
Mindestbestellmenge: 49
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TP2510N8-G Microchip TP2510-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005965.pdf P-MOSFET 100V 480mA 3.5mΩ 1.6W TP2510N8-G Microchip Tech TTP2510n8
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2 Stücke:
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10+2.77 EUR
Mindestbestellmenge: 10
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TP2510N8-G TP2510N8-G Microchip Technology TP2510-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005965.pdf MOSFETs 100V 3.5Ohm
auf Bestellung 3442 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.32 EUR
25+1.94 EUR
100+1.74 EUR
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TP2510N8-G TP2510N8-G Microchip Technology TP2510-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005965.pdf Description: MOSFET P-CH 100V 480MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 12206 Stücke:
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8+2.32 EUR
25+1.93 EUR
100+1.74 EUR
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TP2510N8-G TP2510N8-G Microchip Technology TP2510-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005965.pdf Description: MOSFET P-CH 100V 480MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.74 EUR
Mindestbestellmenge: 2000
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WMJ10N80D1 WMJ10N80D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
50+1.46 EUR
65+1.1 EUR
73+0.99 EUR
120+0.92 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMJ10N80D1 WMJ10N80D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 218 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.83 EUR
50+1.46 EUR
65+1.1 EUR
73+0.99 EUR
120+0.92 EUR
300+0.87 EUR
900+0.8 EUR
Mindestbestellmenge: 40
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WMK10N80M3 WMK10N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBC9574E7020C4&compId=WMx10N80M3.pdf?ci_sign=c8761bd1e990f7fb61ff60a384d39e1833272d57 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.49 EUR
35+2.09 EUR
43+1.69 EUR
57+1.26 EUR
100+1.13 EUR
250+1.04 EUR
Mindestbestellmenge: 29
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WMK10N80M3 WMK10N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBC9574E7020C4&compId=WMx10N80M3.pdf?ci_sign=c8761bd1e990f7fb61ff60a384d39e1833272d57 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 278 Stücke:
Lieferzeit 7-14 Tag (e)
29+2.49 EUR
35+2.09 EUR
43+1.69 EUR
57+1.26 EUR
100+1.13 EUR
250+1.04 EUR
500+0.99 EUR
Mindestbestellmenge: 29
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WML10N80D1B WML10N80D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
auf Bestellung 465 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
94+0.76 EUR
107+0.67 EUR
250+0.61 EUR
Mindestbestellmenge: 77
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0500588000-10-N8
0500588000-10-N8
Hersteller: Molex
Description: 10" PRE-CRIMP 1852 BROWN
Packaging: Bulk
Contact Finish: Tin
Color: Brown
Length: 10.0" (254.0mm)
Wire Gauge: 28 AWG
Contact End: Socket to Cable (Round)
Contact Finish Thickness: 35.4µin (0.90µm)
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
30+0.92 EUR
50+0.87 EUR
100+0.8 EUR
250+0.73 EUR
Mindestbestellmenge: 17
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0500798000-10-N8
0500798000-10-N8
Hersteller: Molex
Description: 10" PRE-CRIMP 1852 BROWN
Packaging: Bulk
Contact Finish: Tin
Color: Brown
Length: 10.0" (254.0mm)
Wire Gauge: 28 AWG
Contact End: Socket to Cable (Round)
Contact Finish Thickness: 35.4µin (0.90µm)
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
30+0.91 EUR
50+0.86 EUR
Mindestbestellmenge: 17
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0500798000-10-N8-D
0500798000-10-N8-D
Hersteller: Molex
Description: 10" PRE-CRIMP 1852 BROWN
Packaging: Bulk
Contact Finish: Tin
Color: Brown
Length: 10.0" (254.0mm)
Wire Gauge: 28 AWG
Contact End: Socket to Socket
Contact Finish Thickness: 35.4µin (0.90µm)
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.12 EUR
30+1.04 EUR
50+1 EUR
100+0.95 EUR
Mindestbestellmenge: 16
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1210N822J500CT WTC_MLCC_General_Purpose.pdf
1210N822J500CT
Hersteller: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 8200pF +-5% 50V
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.74 EUR
10+0.49 EUR
100+0.31 EUR
500+0.25 EUR
1000+0.23 EUR
3000+0.18 EUR
24000+0.17 EUR
Mindestbestellmenge: 4
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A10N86 Spec-00260.pdf
A10N86
Hersteller: Hoffman Enclosures, Inc.
Description: BOX STEEL GRAY 10"L X 7.99"W
Features: Wall Mount
Packaging: Bulk
Color: Gray
Size / Dimension: 10.000" L x 7.992" W (254.00mm x 203.00mm)
Material: Metal, Steel
Thickness: 16 Gauge
Height: 5.984" (152.00mm)
Design: Hinged Door, Lid
Ratings: IP30, NEMA 1, UL-50, 50E
Container Type: Box
Area (L x W): 80.0in² (516cm²)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+209.16 EUR
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A10N8P Spec-00310.pdf
A10N8P
Hersteller: Hoffman Enclosures, Inc.
Description: PANEL N1 8.25X6.25
Features: Mounting Hardware
Packaging: Bulk
Color: White
Size / Dimension: 8.250" L x 6.250" W (209.55mm x 158.75mm)
For Use With/Related Products: Enclosures
Material: Metal, Steel
Type: Panel
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.42 EUR
5+24.3 EUR
10+22.71 EUR
25+20.78 EUR
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FDBL0210N80 fdbl0210n80-d.pdf
FDBL0210N80
Hersteller: onsemi
Description: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
auf Bestellung 3424 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.49 EUR
10+6.01 EUR
100+5.06 EUR
Mindestbestellmenge: 3
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FDBL0210N80 FDBL0210N80-D.pdf
FDBL0210N80
Hersteller: onsemi / Fairchild
MOSFETs Code D IMR
auf Bestellung 3808 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.39 EUR
10+5.9 EUR
100+5.09 EUR
1000+4.7 EUR
2000+4.29 EUR
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FDBL0210N80 fdbl0210n80-d.pdf
FDBL0210N80
Hersteller: onsemi
Description: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+4.14 EUR
Mindestbestellmenge: 2000
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FQA10N80 FAIRS24245-1.pdf?t.download=true&u=5oefqw
FQA10N80
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 9.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4.9A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 14941 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
170+2.66 EUR
Mindestbestellmenge: 170
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FQAF10N80 FAIRS17098-1.pdf?t.download=true&u=5oefqw
FQAF10N80
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 6.7A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 3.35A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 7549 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
145+3.11 EUR
Mindestbestellmenge: 145
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FRW 10 N - 8 OHM FRW%2010%20N_2032.pdf
FRW 10 N - 8 OHM
Hersteller: Visaton GmbH & Co. KG
Description: SPEAKER 8OHM 10W TOP PORT 86DB
Packaging: Bulk
Size / Dimension: 4.016" L x 4.016" W (102.00mm x 102.00mm)
Shape: Round, Square Frame
Termination: Quick Connect
Frequency - Self Resonant: 120Hz
Port Location: Top
Height - Seated (Max): 1.504" (38.20mm)
Part Status: Active
Impedance: 8 Ohms
Power - Max: 20 W
Power - Rated: 10 W
Frequency Range: 80 Hz ~ 17 kHz
Efficiency - dBA: 86.00
Efficiency - Testing: 1W/1M
Efficiency - Type: Sound Pressure Level (SPL)
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.23 EUR
10+16.79 EUR
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GC210N80FE GC210N80FE.pdf
GC210N80FE
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,800V,17A,51W,TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 10V
Power Dissipation (Max): 51W
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 380 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.9 EUR
Mindestbestellmenge: 2000
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GC210N80FE GC210N80FE.pdf
GC210N80FE
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 800V ESD 17A 51W TO-
Packaging: Tube
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 380 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.34 EUR
10+4.18 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFA10N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3202DD9D8B820&compId=IXFA(H%2CP%2CQ)10N80P.pdf?ci_sign=74d432002548a9e884f59b77ee568fc4a0192e9f
IXFA10N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.13 EUR
16+4.48 EUR
22+3.35 EUR
50+3.3 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXFA10N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3202DD9D8B820&compId=IXFA(H%2CP%2CQ)10N80P.pdf?ci_sign=74d432002548a9e884f59b77ee568fc4a0192e9f
IXFA10N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 264 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
14+5.13 EUR
16+4.48 EUR
22+3.35 EUR
50+3.3 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXFA10N80P Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_10N80P_Datasheet.PDF
IXFA10N80P
Hersteller: IXYS
MOSFETs 10 Amps 800V 1.1 Rds
auf Bestellung 9039 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.41 EUR
10+3.84 EUR
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IXFA10N80P littelfuse-discrete-mosfets-ixf-10n80p-datasheet?assetguid=a565a5d2-4577-4a3a-8c98-1b06bc0768c1
IXFA10N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 10A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 29606 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.55 EUR
50+3.53 EUR
100+3.5 EUR
500+3.33 EUR
1000+3.18 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFH10N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3202DD9D8B820&compId=IXFA(H%2CP%2CQ)10N80P.pdf?ci_sign=74d432002548a9e884f59b77ee568fc4a0192e9f
IXFH10N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
auf Bestellung 273 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.08 EUR
17+4.26 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IXFH10N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3202DD9D8B820&compId=IXFA(H%2CP%2CQ)10N80P.pdf?ci_sign=74d432002548a9e884f59b77ee568fc4a0192e9f
IXFH10N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 273 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+5.08 EUR
17+4.26 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IXFH10N80P Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_10N80P_Datasheet.PDF
IXFH10N80P
Hersteller: IXYS
MOSFETs 10 Amps 800V 1.1 Rds
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.53 EUR
10+4.95 EUR
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IXFH10N80P littelfuse-discrete-mosfets-ixf-10n80p-datasheet?assetguid=a565a5d2-4577-4a3a-8c98-1b06bc0768c1
IXFH10N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.67 EUR
Mindestbestellmenge: 3
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IXFN110N85X pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA717BF78FC3820&compId=IXFN110N85X.pdf?ci_sign=85a84830f40ac335953053a978c96cf3d1863395
IXFN110N85X
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 110A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 33mΩ
Kind of channel: enhancement
Pulsed drain current: 220A
Gate charge: 425nC
Reverse recovery time: 205ns
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+90.7 EUR
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IXFN110N85X pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA717BF78FC3820&compId=IXFN110N85X.pdf?ci_sign=85a84830f40ac335953053a978c96cf3d1863395
IXFN110N85X
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 110A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 33mΩ
Kind of channel: enhancement
Pulsed drain current: 220A
Gate charge: 425nC
Reverse recovery time: 205ns
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
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Anzahl Preis
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IXFN110N85X Littelfuse_Discrete_MOSFETs_N_Channel_Ultra_Junction_IXFN110N85X_Datasheet.PDF
IXFN110N85X
Hersteller: IXYS
MOSFET Modules 850V X-Class HiPerFE Power MOSFET
auf Bestellung 241 Stücke:
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Anzahl Preis
1+110 EUR
10+102.94 EUR
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IXFN110N85X IXFN110N85X%20data%20sheet.pdf
IXFN110N85X
Hersteller: IXYS
Description: MOSFET N-CH 850V 110A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 55A, 10V
Power Dissipation (Max): 1170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V
auf Bestellung 246 Stücke:
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Anzahl Preis
1+109.72 EUR
10+92.47 EUR
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IXFP10N80P littelfuse-discrete-mosfets-ixf-10n80p-datasheet?assetguid=a565a5d2-4577-4a3a-8c98-1b06bc0768c1
IXFP10N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 240 Stücke:
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Anzahl Preis
3+8.45 EUR
50+4.51 EUR
100+4.42 EUR
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IXFP10N80P Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_10N80P_Datasheet.PDF
IXFP10N80P
Hersteller: IXYS
MOSFETs 10 Amps 800V 1.1 Rds
auf Bestellung 292 Stücke:
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Anzahl Preis
1+8.29 EUR
10+4.79 EUR
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SC 10 N - 8 OHM SC%2010%20N.pdf
SC 10 N - 8 OHM
Hersteller: Visaton GmbH & Co. KG
Description: SPEAKER 8OHM TOP PORT 90DB
Packaging: Bulk
Size / Dimension: 4.094" Dia (104.00mm)
Shape: Round
Type: General Purpose
Technology: Magnetic
Frequency - Self Resonant: 1.7kHz
Port Location: Top
Height - Seated (Max): 1.437" (36.50mm)
Part Status: Active
Impedance: 8 Ohms
Frequency Range: 1 kHz ~ 20 kHz
Efficiency - dBA: 90.00
Efficiency - Testing: 1W/1M
Efficiency - Type: Sound Pressure Level (SPL)
auf Bestellung 7 Stücke:
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SSF10N80A FAIRS06924-1.pdf?t.download=true&u=5oefqw
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
auf Bestellung 1381 Stücke:
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STD110N8F6 en.DM00151073.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 80A; 167W; DPAK; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 167W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 150nC
Electrical mounting: SMT
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.1 EUR
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STD110N8F6 en.DM00151073.pdf
STD110N8F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
auf Bestellung 1651 Stücke:
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Anzahl Preis
13+1.36 EUR
100+1.33 EUR
500+1.3 EUR
1000+1.28 EUR
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STD110N8F6 en.DM00151073.pdf
STD110N8F6
Hersteller: STMicroelectronics
MOSFETs N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK packa
auf Bestellung 7358 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.42 EUR
10+1.34 EUR
100+1.31 EUR
500+1.28 EUR
1000+1.26 EUR
2500+1.12 EUR
5000+1.09 EUR
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STF10N80K5 en.DM00122529.pdf
STF10N80K5
Hersteller: STMicroelectronics
MOSFETs N-channel 800 V, 0.470 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP packag
auf Bestellung 642 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.41 EUR
10+2.11 EUR
500+2.04 EUR
1000+2.01 EUR
2000+1.95 EUR
5000+1.94 EUR
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STF10N80K5 en.DM00122529.pdf
STF10N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 100 V
auf Bestellung 685 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
50+2.18 EUR
100+2.17 EUR
500+2.09 EUR
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STFU10N80K5 en.DM00122529.pdf
STFU10N80K5
Hersteller: STMicroelectronics
MOSFETs N-channel 800 V, 0.470 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP ultra
auf Bestellung 986 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.88 EUR
10+3.84 EUR
100+2.83 EUR
500+2.53 EUR
1000+2.02 EUR
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STH10N80K5-2AG sth10n80k5-2ag.pdf
STH10N80K5-2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 8A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 680mOhm @ 4A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 567 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.09 EUR
10+4.7 EUR
100+3.51 EUR
500+3.11 EUR
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STH10N80K5-2AG sth10n80k5-2ag.pdf
STH10N80K5-2AG
Hersteller: STMicroelectronics
MOSFETs Automotive-grade N-channel 800 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a
auf Bestellung 1264 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.08 EUR
10+4.7 EUR
100+3.59 EUR
500+3.13 EUR
1000+2.69 EUR
2000+2.66 EUR
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STO-01T-110N-8 eTAB_ON_IN_CHAIN.pdf
STO-01T-110N-8
Hersteller: JST Commercial
Terminals TAB-ON TERMINAL STO-110 SERIES
auf Bestellung 33267 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.15 EUR
40+0.07 EUR
49+0.058 EUR
100+0.051 EUR
250+0.044 EUR
1000+0.039 EUR
2500+0.035 EUR
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STO-41T-110N-8 eTAB-ON-IN-CHAIN.pdf
Hersteller: JST Commercial
Automotive Connectors TAB-ON CHAIN TERMINAL
auf Bestellung 3891 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.15 EUR
38+0.076 EUR
45+0.063 EUR
100+0.056 EUR
250+0.048 EUR
1000+0.04 EUR
2500+0.039 EUR
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STP10N80K5 stp10n80k5.pdf
STP10N80K5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 22nC
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.96 EUR
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STP10N80K5 stp10n80k5.pdf
STP10N80K5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 22nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
12+5.96 EUR
25+3.17 EUR
100+2.86 EUR
500+2.7 EUR
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STP110N8F6 en.DM00130827.pdf
STP110N8F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
auf Bestellung 474 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
50+1.67 EUR
100+1.5 EUR
Mindestbestellmenge: 6
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TN2510N8-G TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf
TN2510N8-G
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 730mA; Idm: 5A; 1.6W; SOT89-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 730mA
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5A
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.59 EUR
47+1.53 EUR
53+1.36 EUR
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TN2510N8-G TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf
Hersteller: Microchip
Transistor N-Channel MOSFET; 100V; 20V; 15Ohm; 730mA; 1,6W; -55°C ~ 150°C; TN2510N8-G TTN2510n8
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+4.77 EUR
Mindestbestellmenge: 10
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TN2510N8-G TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf
TN2510N8-G
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 730mA; Idm: 5A; 1.6W; SOT89-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 730mA
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 155 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
46+1.59 EUR
47+1.53 EUR
53+1.36 EUR
Mindestbestellmenge: 46
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TN2510N8-G TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf
TN2510N8-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 730MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 730mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 2857 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
25+1.71 EUR
100+1.54 EUR
Mindestbestellmenge: 9
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TN2510N8-G TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf
TN2510N8-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 730MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 730mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.54 EUR
Mindestbestellmenge: 2000
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TN2510N8-G TN2510_N_Channel_Enhancement_Mode_Vertical_DMOS_FET_Data_Sheet_20005950A.pdf
TN2510N8-G
Hersteller: Microchip Technology
MOSFETs 100V 1.5Ohm
auf Bestellung 4424 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.04 EUR
25+1.71 EUR
100+1.54 EUR
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TP2510N8-G pVersion=0046&contRep=ZT&docId=005056AB752F1ED484E423C0FD6C21EC&compId=tp2510.pdf?ci_sign=c65f57e7f5e08fd7e06791453b60d2edf7de89f8
TP2510N8-G
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -480mA; Idm: -2.5A; 1.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.48A
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -2.5A
auf Bestellung 1641 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
54+1.33 EUR
68+1.06 EUR
100+0.99 EUR
Mindestbestellmenge: 49
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TP2510N8-G pVersion=0046&contRep=ZT&docId=005056AB752F1ED484E423C0FD6C21EC&compId=tp2510.pdf?ci_sign=c65f57e7f5e08fd7e06791453b60d2edf7de89f8
TP2510N8-G
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -480mA; Idm: -2.5A; 1.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.48A
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -2.5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1641 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
49+1.49 EUR
54+1.33 EUR
68+1.06 EUR
100+0.99 EUR
Mindestbestellmenge: 49
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TP2510N8-G TP2510-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005965.pdf
Hersteller: Microchip
P-MOSFET 100V 480mA 3.5mΩ 1.6W TP2510N8-G Microchip Tech TTP2510n8
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+2.77 EUR
Mindestbestellmenge: 10
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TP2510N8-G TP2510-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005965.pdf
TP2510N8-G
Hersteller: Microchip Technology
MOSFETs 100V 3.5Ohm
auf Bestellung 3442 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.32 EUR
25+1.94 EUR
100+1.74 EUR
Mindestbestellmenge: 2
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TP2510N8-G TP2510-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005965.pdf
TP2510N8-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 100V 480MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 12206 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.32 EUR
25+1.93 EUR
100+1.74 EUR
Mindestbestellmenge: 8
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TP2510N8-G TP2510-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005965.pdf
TP2510N8-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 100V 480MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.74 EUR
Mindestbestellmenge: 2000
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WMJ10N80D1
WMJ10N80D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
50+1.46 EUR
65+1.1 EUR
73+0.99 EUR
120+0.92 EUR
Mindestbestellmenge: 40
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WMJ10N80D1
WMJ10N80D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 218 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+1.83 EUR
50+1.46 EUR
65+1.1 EUR
73+0.99 EUR
120+0.92 EUR
300+0.87 EUR
900+0.8 EUR
Mindestbestellmenge: 40
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WMK10N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBC9574E7020C4&compId=WMx10N80M3.pdf?ci_sign=c8761bd1e990f7fb61ff60a384d39e1833272d57
WMK10N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.49 EUR
35+2.09 EUR
43+1.69 EUR
57+1.26 EUR
100+1.13 EUR
250+1.04 EUR
Mindestbestellmenge: 29
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WMK10N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBC9574E7020C4&compId=WMx10N80M3.pdf?ci_sign=c8761bd1e990f7fb61ff60a384d39e1833272d57
WMK10N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 278 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
29+2.49 EUR
35+2.09 EUR
43+1.69 EUR
57+1.26 EUR
100+1.13 EUR
250+1.04 EUR
500+0.99 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
WML10N80D1B
WML10N80D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
auf Bestellung 465 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
94+0.76 EUR
107+0.67 EUR
250+0.61 EUR
Mindestbestellmenge: 77
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