Suchergebnisse für "11n60" : > 60

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11N60 SIEMENS TO220
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
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11N60C3 INFINEON 09+ DIP-3
auf Bestellung 2162 Stücke:
Lieferzeit 21-28 Tag (e)
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11N60S5 TO-263
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
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612-100-1-1-N-60 612-100-1-1-N-60 NOSHOK, Inc. 612_Submersible_Level_Transmitters.pdf Description: Submersible Level Transmitter
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+1984.92 EUR
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612-15-1-1-N-60 612-15-1-1-N-60 NOSHOK, Inc. 612_Submersible_Level_Transmitters.pdf Description: Submersible Level Transmitter
auf Bestellung 21 Stücke:
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612-200inH2O-1-1-N-60 612-200inH2O-1-1-N-60 NOSHOK, Inc. 612_Submersible_Level_Transmitters.pdf Description: Submersible Level Transmitter
Features: IP68
Packaging: Bulk
Output Type: Analog Current
Output: 4 mA ~ 20 mA
Operating Pressure: 7.25PSI (50kPa)
Pressure Type: Differential
Accuracy: ±0.25%
Operating Temperature: -10°C ~ 50°C
Termination Style: Cable 18.3m
Voltage - Supply: 10 ~ 30VDC
Applications: Industrial
Port Style: Nosecone
auf Bestellung 4 Stücke:
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1+1984.92 EUR
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612-25-1-1-N-60 612-25-1-1-N-60 NOSHOK, Inc. 612_Submersible_Level_Transmitters.pdf Description: Submersible Level Transmitter
auf Bestellung 3 Stücke:
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612-25-1-1-N-60-FE-DC 612-25-1-1-N-60-FE-DC NOSHOK, Inc. 612_Submersible_Level_Transmitters.pdf Description: Submersible Level Transmitter
auf Bestellung 3 Stücke:
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1+2091.13 EUR
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612-30-1-1-N-60 612-30-1-1-N-60 NOSHOK, Inc. 612_Submersible_Level_Transmitters.pdf Description: Submersible Level Transmitter
Features: IP68
Packaging: Bulk
Output Type: Analog Current
Output: 4 mA ~ 20 mA
Operating Pressure: 0PSI ~ 30PSI (0kPa ~ 206.84kPa)
Pressure Type: Gauge
Accuracy: ±0.25%
Operating Temperature: -10°C ~ 50°C
Termination Style: Cable 18.3m
Voltage - Supply: 10 ~ 30VDC
Applications: Industrial
Port Style: Nosecone
auf Bestellung 4 Stücke:
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1+1984.92 EUR
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612-60-1-1-N-60 612-60-1-1-N-60 NOSHOK, Inc. 612_Submersible_Level_Transmitters.pdf Description: Submersible Level Transmitter
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
1+1984.92 EUR
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AOW11N60 AOW11N60 ALPHA & OMEGA SEMICONDUCTOR AOW11N60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: THT
Gate charge: 30.6nC
Kind of channel: enhancement
auf Bestellung 339 Stücke:
Lieferzeit 14-21 Tag (e)
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AOW11N60 AOW11N60 Alpha & Omega Semiconductor Inc. AOW11N60.pdf Description: MOSFET N-CH 600V 11A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.5A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
auf Bestellung 769 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.84 EUR
10+3.12 EUR
50+2.38 EUR
100+2.13 EUR
500+1.71 EUR
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AOWF11N60 AOWF11N60 ALPHA & OMEGA SEMICONDUCTOR AOWF11N60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262F
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 30.6nC
Kind of channel: enhancement
auf Bestellung 667 Stücke:
Lieferzeit 14-21 Tag (e)
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FCB11N60TM FCB11N60TM onsemi FCB11N60-D.pdf MOSFETs 600V, 11A, 380mOhms N-Channel SuperFET MOSFET
auf Bestellung 528 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.07 EUR
10+4.71 EUR
100+4.32 EUR
500+3.53 EUR
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FCB11N60TM FCB11N60TM onsemi FCB11N60-D.pdf Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 24300 Stücke:
Lieferzeit 10-14 Tag (e)
800+3.05 EUR
Mindestbestellmenge: 800 Stücke
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FCB11N60TM FCB11N60TM onsemi FCB11N60-D.pdf Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 24464 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.09 EUR
10+6.01 EUR
50+4.69 EUR
100+4.27 EUR
Mindestbestellmenge: 3 Stücke
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FCP11N60 FCP11N60 ONSEMI FCP11N60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of channel: enhancement
Technology: SuperFET®
Kind of package: tube
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
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FCP11N60 FCP11N60 onsemi FCPF11N60T-D.pdf Description: MOSFET N-CH 600V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 1591 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.54 EUR
10+4.96 EUR
50+3.87 EUR
100+3.51 EUR
500+2.89 EUR
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FCP11N60 FCP11N60 onsemi FCPF11N60T-D.pdf MOSFETs 600V 11A N-CH
auf Bestellung 669 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.56 EUR
10+3.89 EUR
100+3.52 EUR
500+3.28 EUR
1000+3.09 EUR
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FCP11N60F FCP11N60F onsemi FCP11N60F-D.pdf MOSFETs 600V NCH MOSFET
auf Bestellung 5559 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.98 EUR
10+4.13 EUR
100+3.72 EUR
500+3.33 EUR
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FCP11N60F FCP11N60F onsemi FCP11N60F-D.pdf Description: MOSFET N-CH 600V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 2025 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.94 EUR
10+5.26 EUR
50+4.09 EUR
100+3.72 EUR
500+3.07 EUR
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FCPF11N60 FCPF11N60 ON-Semiconductor info-tfcpf11n60.pdf description N-MOSFET 11A 600V 36W 0.38Ω FCPF11N60 TFCPF11N60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
10+6.63 EUR
Mindestbestellmenge: 10 Stücke
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FCPF11N60 FCPF11N60 onsemi FAIR-S-A0002365666-1.pdf?t.download=true&u=5oefqw FCPF11N60T-D.pdf description MOSFETs 600V 11A N-CH
auf Bestellung 8169 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.04 EUR
10+4.16 EUR
100+4.14 EUR
500+3.5 EUR
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FCPF11N60 FCPF11N60 Fairchild Semiconductor FAIR-S-A0002365666-1.pdf?t.download=true&u=5oefqw description Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 461 Stücke:
Lieferzeit 10-14 Tag (e)
139+3.87 EUR
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FCPF11N60 FCPF11N60 onsemi FCPF11N60T-D.pdf description Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 61 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.02 EUR
10+5.3 EUR
50+4.13 EUR
Mindestbestellmenge: 3 Stücke
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FCPF11N60F FCPF11N60F ONSEMI FCPF11N60F-D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of channel: enhancement
Technology: SJ-MOSFET
Kind of package: tube
Pulsed drain current: 33A
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
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FCPF11N60F FCPF11N60F onsemi FCPF11N60F-D.pdf Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 1931 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.73 EUR
10+5.81 EUR
50+4.55 EUR
100+4.14 EUR
500+3.43 EUR
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FCPF11N60F FCPF11N60F onsemi FCPF11N60F-D.pdf MOSFETs 600V NCH MOSFET
auf Bestellung 308 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.77 EUR
10+4.57 EUR
100+4.14 EUR
500+3.83 EUR
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FCPF11N60NT FCPF11N60NT Fairchild Semiconductor FAIRS46027-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Power Dissipation (Max): 32.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
auf Bestellung 14107 Stücke:
Lieferzeit 10-14 Tag (e)
124+4.34 EUR
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FCPF11N60NT FCPF11N60NT onsemi FAIRS46027-1.pdf?t.download=true&u=5oefqw FCPF11N60NT-D.pdf MOSFETs SupreMOS 11A
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.64 EUR
10+7 EUR
100+5.21 EUR
500+4.21 EUR
1000+3.92 EUR
2000+3.77 EUR
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FCPF11N60T FCPF11N60T onsemi FCPF11N60T-D.pdf Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 868 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.9 EUR
10+5.9 EUR
50+4.61 EUR
100+4.19 EUR
500+3.46 EUR
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SIHH11N60E-T1-GE3 SIHH11N60E-T1-GE3 Vishay / Siliconix sihh11n60e.pdf MOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8
auf Bestellung 2371 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.72 EUR
10+7.88 EUR
100+5.7 EUR
500+4.58 EUR
1000+3.33 EUR
3000+3.01 EUR
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SiHH11N60EF-T1-GE3 SiHH11N60EF-T1-GE3 Vishay Siliconix sihh11n60ef.pdf Description: MOSFET N-CH 600V 11A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V
auf Bestellung 2371 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.4 EUR
10+6.25 EUR
50+4.88 EUR
100+4.44 EUR
500+3.92 EUR
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SPA11N60C3XKSA1 SPA11N60C3XKSA1 Infineon Technologies SPx11N60C3%20%28E8185%29.pdf Description: MOSFET N-CH 600V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 1741 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.16 EUR
10+4.69 EUR
50+3.62 EUR
100+3.27 EUR
500+2.73 EUR
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SPB11N60C3 SPB11N60C3 Infineon Technologies Infineon_SPB11N60C3_DS_v02_06_en.pdf MOSFETs N-Ch 600V 11A D2PAK-2 CoolMOS C3
auf Bestellung 1015 Stücke:
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SPB11N60C3ATMA1 SPB11N60C3ATMA1 Infineon Technologies SPB11N60C3_Rev+2+6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dde5d4908 Description: MOSFET N-CH 650V 11A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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SPB11N60C3ATMA1 SPB11N60C3ATMA1 Infineon Technologies SPB11N60C3_Rev+2+6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dde5d4908 Description: MOSFET N-CH 650V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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SPI11N60C3XKSA1 SPI11N60C3XKSA1 Infineon Technologies Infineon-SPP_I_A11N60C3_E8185-DS-v03_03-EN.pdf?fileId=db3a3043163797a6011638a2fdee01a3 Description: SPI11N60C3 - 600V COOLMOS N-CHAN
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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SPI11N60S5 SPI11N60S5 Infineon Technologies Infineon-SPP_I_A11N60C3_E8185-DS-v03_03-EN.pdf?fileId=db3a3043163797a6011638a2fdee01a3 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
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SPP11N60C3XKSA1 SPP11N60C3XKSA1 INFINEON TECHNOLOGIES SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™
Pulsed drain current: 33A
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SPP11N60C3XKSA1 SPP11N60C3XKSA1 Infineon Technologies SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3 MOSFETs N-Ch 600V 11A TO220-3
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SPP11N60CFDXKSA1 SPP11N60CFDXKSA1 Infineon Technologies infineon_spp11n60cfd_ds_en.pdf MOSFETs N-Ch 650V 11A TO220-3
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SPP11N60S5XKSA1 SPP11N60S5XKSA1 Infineon Technologies Infineon-SPP_I11N60S5-DS-v02_07-en.pdf MOSFETs N-Ch 600V 11A TO220-3
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1+8.63 EUR
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SPW11N60C3FKSA1 SPW11N60C3FKSA1 Infineon Technologies SPW11N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d87b14893 Description: MOSFET N-CH 650V 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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145+3.69 EUR
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SPW11N60CFDFKSA1 SPW11N60CFDFKSA1 Infineon Technologies SPW11N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e5f1849b3 Description: MOSFET N-CH 650V 11A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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SPW11N60S5 SPW11N60S5 Infineon Technologies Infineon-SPW11N60C3-DS-v02_06-en.pdf?fileId=db3a304412b407950112b42d87b14893 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
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140+3.83 EUR
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STD11N60DM2 STD11N60DM2 STMicroelectronics en.DM00299437.pdf Description: MOSFET N-CH 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V
auf Bestellung 1004 Stücke:
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STD11N60DM2 STD11N60DM2 STMicroelectronics en.DM00299437.pdf MOSFETs N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package
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STF11N60DM2 STF11N60DM2 STMicroelectronics en.DM00299434.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 16.5nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 40A
auf Bestellung 598 Stücke:
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STF11N60DM2 STF11N60DM2 STMicroelectronics en.DM00299434.pdf MOSFETs N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP packa
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1+4.52 EUR
10+2.23 EUR
100+1.98 EUR
500+1.58 EUR
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STF11N60DM2 STF11N60DM2 STMicroelectronics en.DM00299434.pdf Description: MOSFET N-CH 600V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V
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STF11N60M2-EP STF11N60M2-EP STMicroelectronics en.DM00286212.pdf Description: MOSFET N-CH 600V 7.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 595mOhm @ 3.75A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 100 V
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STF11N60M2-EP STF11N60M2-EP STMicroelectronics en.DM00286212.pdf MOSFETs N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a TO-220FP p
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STP11N60DM2 STP11N60DM2 STMicroelectronics en.DM00299439.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 6.3A; Idm: 40A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 16.5nC
Kind of channel: enhancement
Technology: MDmesh™ DM2
Kind of package: tube
Pulsed drain current: 40A
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WMO11N60C2 WMO11N60C2 WAYON WMx11N60C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of channel: enhancement
Technology: WMOS™ C2
Kind of package: reel; tape
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FCB11N60 fairchild to-263/d2-pak
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FCB11N60F fairchild to-263/d2-pak
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FCP11N60F ONN FCP11N60F-D.pdf
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FCPF11N60/FSC FSC 08+;
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FCPF11N60NT ON Semiconductor FAIRS46027-1.pdf?t.download=true&u=5oefqw FCPF11N60NT-D.pdf
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11N60
Hersteller: SIEMENS
TO220
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11N60C3
Hersteller: INFINEON
09+ DIP-3
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11N60S5
TO-263
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612-100-1-1-N-60 612_Submersible_Level_Transmitters.pdf
612-100-1-1-N-60
Hersteller: NOSHOK, Inc.
Description: Submersible Level Transmitter
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1+1984.92 EUR
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612-15-1-1-N-60 612_Submersible_Level_Transmitters.pdf
612-15-1-1-N-60
Hersteller: NOSHOK, Inc.
Description: Submersible Level Transmitter
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612-200inH2O-1-1-N-60 612_Submersible_Level_Transmitters.pdf
612-200inH2O-1-1-N-60
Hersteller: NOSHOK, Inc.
Description: Submersible Level Transmitter
Features: IP68
Packaging: Bulk
Output Type: Analog Current
Output: 4 mA ~ 20 mA
Operating Pressure: 7.25PSI (50kPa)
Pressure Type: Differential
Accuracy: ±0.25%
Operating Temperature: -10°C ~ 50°C
Termination Style: Cable 18.3m
Voltage - Supply: 10 ~ 30VDC
Applications: Industrial
Port Style: Nosecone
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612-25-1-1-N-60 612_Submersible_Level_Transmitters.pdf
612-25-1-1-N-60
Hersteller: NOSHOK, Inc.
Description: Submersible Level Transmitter
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612-25-1-1-N-60-FE-DC 612_Submersible_Level_Transmitters.pdf
612-25-1-1-N-60-FE-DC
Hersteller: NOSHOK, Inc.
Description: Submersible Level Transmitter
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612-30-1-1-N-60 612_Submersible_Level_Transmitters.pdf
612-30-1-1-N-60
Hersteller: NOSHOK, Inc.
Description: Submersible Level Transmitter
Features: IP68
Packaging: Bulk
Output Type: Analog Current
Output: 4 mA ~ 20 mA
Operating Pressure: 0PSI ~ 30PSI (0kPa ~ 206.84kPa)
Pressure Type: Gauge
Accuracy: ±0.25%
Operating Temperature: -10°C ~ 50°C
Termination Style: Cable 18.3m
Voltage - Supply: 10 ~ 30VDC
Applications: Industrial
Port Style: Nosecone
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612-60-1-1-N-60 612_Submersible_Level_Transmitters.pdf
612-60-1-1-N-60
Hersteller: NOSHOK, Inc.
Description: Submersible Level Transmitter
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AOW11N60 AOW11N60.pdf
AOW11N60
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: THT
Gate charge: 30.6nC
Kind of channel: enhancement
auf Bestellung 339 Stücke:
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AOW11N60 AOW11N60.pdf
AOW11N60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 11A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.5A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
auf Bestellung 769 Stücke:
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5+4.84 EUR
10+3.12 EUR
50+2.38 EUR
100+2.13 EUR
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AOWF11N60 AOWF11N60.pdf
AOWF11N60
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262F
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 30.6nC
Kind of channel: enhancement
auf Bestellung 667 Stücke:
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FCB11N60TM FCB11N60-D.pdf
FCB11N60TM
Hersteller: onsemi
MOSFETs 600V, 11A, 380mOhms N-Channel SuperFET MOSFET
auf Bestellung 528 Stücke:
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AnzahlPrivatkunde
1+9.07 EUR
10+4.71 EUR
100+4.32 EUR
500+3.53 EUR
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FCB11N60TM FCB11N60-D.pdf
FCB11N60TM
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 24300 Stücke:
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AnzahlPrivatkunde
800+3.05 EUR
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FCB11N60TM FCB11N60-D.pdf
FCB11N60TM
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 24464 Stücke:
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3+9.09 EUR
10+6.01 EUR
50+4.69 EUR
100+4.27 EUR
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FCP11N60 FCP11N60.pdf
FCP11N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of channel: enhancement
Technology: SuperFET®
Kind of package: tube
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
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FCP11N60 FCPF11N60T-D.pdf
FCP11N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 1591 Stücke:
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3+7.54 EUR
10+4.96 EUR
50+3.87 EUR
100+3.51 EUR
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FCP11N60 FCPF11N60T-D.pdf
FCP11N60
Hersteller: onsemi
MOSFETs 600V 11A N-CH
auf Bestellung 669 Stücke:
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AnzahlPrivatkunde
1+7.56 EUR
10+3.89 EUR
100+3.52 EUR
500+3.28 EUR
1000+3.09 EUR
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FCP11N60F FCP11N60F-D.pdf
FCP11N60F
Hersteller: onsemi
MOSFETs 600V NCH MOSFET
auf Bestellung 5559 Stücke:
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AnzahlPrivatkunde
1+7.98 EUR
10+4.13 EUR
100+3.72 EUR
500+3.33 EUR
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FCP11N60F FCP11N60F-D.pdf
FCP11N60F
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 2025 Stücke:
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3+7.94 EUR
10+5.26 EUR
50+4.09 EUR
100+3.72 EUR
500+3.07 EUR
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FCPF11N60 description info-tfcpf11n60.pdf
FCPF11N60
Hersteller: ON-Semiconductor
N-MOSFET 11A 600V 36W 0.38Ω FCPF11N60 TFCPF11N60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
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AnzahlPrivatkunde
10+6.63 EUR
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FCPF11N60 description FAIR-S-A0002365666-1.pdf?t.download=true&u=5oefqw FCPF11N60T-D.pdf
FCPF11N60
Hersteller: onsemi
MOSFETs 600V 11A N-CH
auf Bestellung 8169 Stücke:
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1+8.04 EUR
10+4.16 EUR
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FCPF11N60 description FAIR-S-A0002365666-1.pdf?t.download=true&u=5oefqw
FCPF11N60
Hersteller: Fairchild Semiconductor
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 461 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
139+3.87 EUR
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FCPF11N60 description FCPF11N60T-D.pdf
FCPF11N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 61 Stücke:
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AnzahlPrivatkunde
3+8.02 EUR
10+5.3 EUR
50+4.13 EUR
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FCPF11N60F FCPF11N60F-D.pdf
FCPF11N60F
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of channel: enhancement
Technology: SJ-MOSFET
Kind of package: tube
Pulsed drain current: 33A
auf Bestellung 100 Stücke:
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FCPF11N60F FCPF11N60F-D.pdf
FCPF11N60F
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 1931 Stücke:
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AnzahlPrivatkunde
3+8.73 EUR
10+5.81 EUR
50+4.55 EUR
100+4.14 EUR
500+3.43 EUR
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FCPF11N60F FCPF11N60F-D.pdf
FCPF11N60F
Hersteller: onsemi
MOSFETs 600V NCH MOSFET
auf Bestellung 308 Stücke:
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1+8.77 EUR
10+4.57 EUR
100+4.14 EUR
500+3.83 EUR
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FCPF11N60NT FAIRS46027-1.pdf?t.download=true&u=5oefqw
FCPF11N60NT
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Power Dissipation (Max): 32.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
auf Bestellung 14107 Stücke:
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AnzahlPrivatkunde
124+4.34 EUR
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FCPF11N60NT FAIRS46027-1.pdf?t.download=true&u=5oefqw FCPF11N60NT-D.pdf
FCPF11N60NT
Hersteller: onsemi
MOSFETs SupreMOS 11A
auf Bestellung 187 Stücke:
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AnzahlPrivatkunde
1+10.64 EUR
10+7 EUR
100+5.21 EUR
500+4.21 EUR
1000+3.92 EUR
2000+3.77 EUR
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FCPF11N60T FCPF11N60T-D.pdf
FCPF11N60T
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 868 Stücke:
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AnzahlPrivatkunde
3+8.9 EUR
10+5.9 EUR
50+4.61 EUR
100+4.19 EUR
500+3.46 EUR
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SIHH11N60E-T1-GE3 sihh11n60e.pdf
SIHH11N60E-T1-GE3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8
auf Bestellung 2371 Stücke:
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1+9.72 EUR
10+7.88 EUR
100+5.7 EUR
500+4.58 EUR
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3000+3.01 EUR
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SiHH11N60EF-T1-GE3 sihh11n60ef.pdf
SiHH11N60EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V
auf Bestellung 2371 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.4 EUR
10+6.25 EUR
50+4.88 EUR
100+4.44 EUR
500+3.92 EUR
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SPA11N60C3XKSA1 SPx11N60C3%20%28E8185%29.pdf
SPA11N60C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 1741 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.16 EUR
10+4.69 EUR
50+3.62 EUR
100+3.27 EUR
500+2.73 EUR
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SPB11N60C3 Infineon_SPB11N60C3_DS_v02_06_en.pdf
SPB11N60C3
Hersteller: Infineon Technologies
MOSFETs N-Ch 600V 11A D2PAK-2 CoolMOS C3
auf Bestellung 1015 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+7.83 EUR
10+4.27 EUR
100+3.89 EUR
500+3.33 EUR
1000+3.14 EUR
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SPB11N60C3ATMA1 SPB11N60C3_Rev+2+6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dde5d4908
SPB11N60C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+2.95 EUR
3000+2.7 EUR
Mindestbestellmenge: 1000 Stücke
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SPB11N60C3ATMA1 SPB11N60C3_Rev+2+6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dde5d4908
SPB11N60C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 5245 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.29 EUR
10+5.46 EUR
50+4.25 EUR
100+3.86 EUR
500+3.3 EUR
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SPI11N60C3XKSA1 Infineon-SPP_I_A11N60C3_E8185-DS-v03_03-EN.pdf?fileId=db3a3043163797a6011638a2fdee01a3
SPI11N60C3XKSA1
Hersteller: Infineon Technologies
Description: SPI11N60C3 - 600V COOLMOS N-CHAN
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
180+2.98 EUR
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SPI11N60S5 Infineon-SPP_I_A11N60C3_E8185-DS-v03_03-EN.pdf?fileId=db3a3043163797a6011638a2fdee01a3
SPI11N60S5
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
auf Bestellung 368 Stücke:
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176+3.05 EUR
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SPP11N60C3XKSA1 SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3
SPP11N60C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™
Pulsed drain current: 33A
auf Bestellung 57 Stücke:
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SPP11N60C3XKSA1 SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3
SPP11N60C3XKSA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 600V 11A TO220-3
auf Bestellung 530 Stücke:
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AnzahlPrivatkunde
1+6.34 EUR
10+3.2 EUR
100+2.89 EUR
500+2.51 EUR
1000+2.48 EUR
2500+2.37 EUR
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SPP11N60CFDXKSA1 infineon_spp11n60cfd_ds_en.pdf
SPP11N60CFDXKSA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 650V 11A TO220-3
auf Bestellung 378 Stücke:
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AnzahlPrivatkunde
1+6.78 EUR
10+4.44 EUR
100+3.25 EUR
500+2.51 EUR
2500+2.4 EUR
5000+2.37 EUR
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SPP11N60S5XKSA1 Infineon-SPP_I11N60S5-DS-v02_07-en.pdf
SPP11N60S5XKSA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 600V 11A TO220-3
auf Bestellung 138 Stücke:
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AnzahlPrivatkunde
1+8.63 EUR
10+5.65 EUR
100+4.21 EUR
500+3.52 EUR
1000+3.27 EUR
2500+3.06 EUR
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SPW11N60C3FKSA1 SPW11N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d87b14893
SPW11N60C3FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 259866 Stücke:
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AnzahlPrivatkunde
145+3.69 EUR
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SPW11N60CFDFKSA1 SPW11N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e5f1849b3
SPW11N60CFDFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 4250 Stücke:
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AnzahlPrivatkunde
140+3.83 EUR
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SPW11N60S5 Infineon-SPW11N60C3-DS-v02_06-en.pdf?fileId=db3a304412b407950112b42d87b14893
SPW11N60S5
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
auf Bestellung 13461 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
140+3.83 EUR
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STD11N60DM2 en.DM00299437.pdf
STD11N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V
auf Bestellung 1004 Stücke:
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5+4.4 EUR
10+2.81 EUR
50+2.13 EUR
100+1.92 EUR
500+1.54 EUR
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STD11N60DM2 en.DM00299437.pdf
STD11N60DM2
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package
auf Bestellung 767 Stücke:
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AnzahlPrivatkunde
1+4.41 EUR
10+2.14 EUR
100+1.93 EUR
500+1.54 EUR
1000+1.39 EUR
2500+1.25 EUR
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STF11N60DM2 en.DM00299434.pdf
STF11N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 16.5nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 40A
auf Bestellung 598 Stücke:
Lieferzeit 14-21 Tag (e)
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STF11N60DM2 en.DM00299434.pdf
STF11N60DM2
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP packa
auf Bestellung 2276 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+4.52 EUR
10+2.23 EUR
100+1.98 EUR
500+1.58 EUR
1000+1.42 EUR
2000+1.34 EUR
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STF11N60DM2 en.DM00299434.pdf
STF11N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V
auf Bestellung 1309 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.5 EUR
10+2.89 EUR
50+2.19 EUR
100+1.98 EUR
500+1.57 EUR
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STF11N60M2-EP en.DM00286212.pdf
STF11N60M2-EP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 7.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 595mOhm @ 3.75A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 100 V
auf Bestellung 961 Stücke:
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AnzahlPrivatkunde
5+4.24 EUR
10+2.71 EUR
50+2.06 EUR
100+1.84 EUR
500+1.46 EUR
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STF11N60M2-EP en.DM00286212.pdf
STF11N60M2-EP
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a TO-220FP p
auf Bestellung 850 Stücke:
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1+4.25 EUR
10+2.07 EUR
100+1.86 EUR
500+1.48 EUR
1000+1.37 EUR
2000+1.29 EUR
5000+1.26 EUR
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STP11N60DM2 en.DM00299439.pdf
STP11N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 6.3A; Idm: 40A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 16.5nC
Kind of channel: enhancement
Technology: MDmesh™ DM2
Kind of package: tube
Pulsed drain current: 40A
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
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WMO11N60C2 WMx11N60C2.pdf
WMO11N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of channel: enhancement
Technology: WMOS™ C2
Kind of package: reel; tape
auf Bestellung 2012 Stücke:
Lieferzeit 14-21 Tag (e)
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FCB11N60
Hersteller: fairchild
to-263/d2-pak
auf Bestellung 60000 Stücke:
Lieferzeit 21-28 Tag (e)
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FCB11N60F
Hersteller: fairchild
to-263/d2-pak
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
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FCP11N60F FCP11N60F-D.pdf
Hersteller: ONN
auf Bestellung 950 Stücke:
Lieferzeit 21-28 Tag (e)
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FCPF11N60/FSC
Hersteller: FSC
08+;
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
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FCPF11N60NT FAIRS46027-1.pdf?t.download=true&u=5oefqw FCPF11N60NT-D.pdf
Hersteller: ON Semiconductor
auf Bestellung 950 Stücke:
Lieferzeit 21-28 Tag (e)
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