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STP80NF55-06 STP80NF55-06 STMicroelectronics en.CD00002670.pdf Description: MOSFET N-CH 55V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Produkt ist nicht verfügbar
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STY60NM50 STY60NM50 STMicroelectronics en.CD00002391.pdf Description: MOSFET N-CH 500V 60A MAX247
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: MAX247™
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 560W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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STE53NC50 STE53NC50 STMicroelectronics en.CD00002866.pdf Description: MOSFET N-CH 500V 53A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOTOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
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STP55NF06 STP55NF06 STMicroelectronics en.CD00002311.pdf description Description: MOSFET N-CH 60V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 27.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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100+2.39 EUR
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STP80NE06-10 STP80NE06-10 STMicroelectronics STP80NE06-10.pdf Description: MOSFET N-CH 60V 80A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STP4NB80 STP4NB80 STMicroelectronics STP4NB80_FP.pdf Description: MOSFET N-CH 800V 4A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STH15NB50FI STH15NB50FI STMicroelectronics STH15NB50FI%2C%20STW15NB50.pdf Description: MOSFET N-CH 500V 10.5A ISOWAT218
Packaging: Tube
Package / Case: ISOWATT-218-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOWATT-218
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
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STW9NK90Z STW9NK90Z STMicroelectronics en.CD00003327.pdf Description: MOSFET N-CH 900V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 25 V
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STP9NK90Z STP9NK90Z STMicroelectronics en.CD00003327.pdf description Description: MOSFET N-CH 900V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 25 V
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STP6NB90 STP6NB90 STMicroelectronics STP6NB90.pdf Description: MOSFET N-CH 900V 5.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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STP50NE08 STP50NE08 STMicroelectronics STP50NE08.pdf Description: MOSFET N-CH 80V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
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STP75NF75 STP75NF75 STMicroelectronics ST%28B%2CP%2975NF75%28FP%29.pdf Description: MOSFET N-CH 75V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Produkt ist nicht verfügbar
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STW11NB80 STW11NB80 STMicroelectronics STW11NB80.pdf Description: MOSFET N-CH 800V 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 5.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
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STW80NE06-10 STW80NE06-10 STMicroelectronics STW80NE06-10.pdf Description: MOSFET N-CH 60V 80A TO247-3
Produkt ist nicht verfügbar
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VNP5N07 VNP5N07 STMicroelectronics VNP5N07.pdf Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: TO-220
Ratio - Input:Output: 1:1
Current - Output (Max): 3.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 55V (Max)
Input Type: Non-Inverting
Rds On (Typ): 200mOhm (Max)
Output Configuration: Low Side
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: TO-220-3
Features: Status Flag
Packaging: Tube
Produkt ist nicht verfügbar
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VNP35N07 VNP35N07 STMicroelectronics en.CD00000045.pdf description Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Packaging: Tube
Features: Status Flag
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 280mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 55V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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VNP20N07 VNP20N07 STMicroelectronics en.CD00000218.pdf Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Packaging: Tube
Features: Status Flag
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 50mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 55V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 14A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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VNB20N07 VNB20N07 STMicroelectronics en.CD00000232.pdf description Description: IC PWR DRIVER N-CHAN 1:1 D2PAK
Packaging: Tube
Features: Status Flag
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 50mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 55V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 14A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Produkt ist nicht verfügbar
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VNP10N07 VNP10N07 STMicroelectronics en.CD00000216.pdf Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 100mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 55V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 14A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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VNP10N07FI VNP10N07FI STMicroelectronics en.CD00000230.pdf Description: IC PWR DRVR N-CH 1:1 ISOWATT220
Packaging: Tube
Package / Case: ISOWATT-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 100mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 55V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 14A
Ratio - Input:Output: 1:1
Supplier Device Package: ISOWATT-220
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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BU931T BU931T STMicroelectronics en.CD00000005.pdf Description: TRANS NPN DARL 400V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 250mA, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
Supplier Device Package: TO-220
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 125 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STTH310 STTH310 STMicroelectronics en.CD00003263.pdf Description: DIODE STANDARD 1000V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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STTH208 STTH208 STMicroelectronics en.CD00003262.pdf Description: DIODE STANDARD 800V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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STTH110 STTH110 STMicroelectronics en.CD00003261.pdf description Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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STTH302 STTH302 STMicroelectronics en.CD00002693.pdf Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
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BYT01-400 BYT01-400 STMicroelectronics BYT01-400.pdf Description: DIODE STANDARD 400V 1A DO15
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STPS1150 STPS1150 STMicroelectronics en.CD00003321.pdf Description: DIODE SCHOTTKY 150V 1A DO41
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
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STGD3NB60FT4 STGD3NB60FT4 STMicroelectronics STGx3NB60F%28D%29.pdf Description: IGBT 600V 6A 60W DPAK
Power - Max: 60 W
Current - Collector Pulsed (Icm): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Gate Charge: 16 nC
Test Condition: 480V, 3A, 10Ohm, 15V
Switching Energy: 125µJ (off)
Td (on/off) @ 25°C: 12.5ns/105ns
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Reverse Recovery Time (trr): 45 ns
Input Type: Standard
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STB11NK50ZT4 STB11NK50ZT4 STMicroelectronics en.CD00003024.pdf Description: MOSFET N-CH 500V 10A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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STB120NF10T4 STB120NF10T4 STMicroelectronics en.CD00003356.pdf Description: MOSFET N-CH 100V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 60A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
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STPS140A STPS140A STMicroelectronics en.CD00001107.pdf Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 12 µA @ 40 V
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STPS3L60S STPS3L60S STMicroelectronics en.CD00001711.pdf Description: DIODE SCHOTTKY 60V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 55 µA @ 60 V
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CLT3-4BT6-TR CLT3-4BT6-TR STMicroelectronics cd00002914.pdf Description: TVS DEVICE MIXED 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Applications: General Purpose
Technology: Mixed Technology
Supplier Device Package: 20-TSSOP
Part Status: Active
Number of Circuits: 4
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STPS20H100CG-TR STPS20H100CG-TR STMicroelectronics en.CD00001292.pdf Description: DIODE ARRAY SCHOT 100V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
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LCP1511DRL LCP1511DRL STMicroelectronics CD00000854.pdf Description: THYRISTOR 30A 8SOIC
Produkt ist nicht verfügbar
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STTH108A STTH108A STMicroelectronics en.CD00003259.pdf Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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STTH112U STTH112U STMicroelectronics en.CD00003260.pdf Description: DIODE STANDARD 1200V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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STPS2L60A STPS2L60A STMicroelectronics en.CD00003166.pdf Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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MJD112T4 MJD112T4 STMicroelectronics MJD112T4.pdf description Description: TRANS NPN DARL 100V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 20 W
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STPS1L60A STPS1L60A STMicroelectronics en.CD00002285.pdf Description: DIODE SCHOTTKY 60V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
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STPS340S STPS340S STMicroelectronics en.CD00000844.pdf Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
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STPS340U STPS340U STMicroelectronics en.CD00000844.pdf description Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
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STPS340B-TR STPS340B-TR STMicroelectronics en.CD00000844.pdf Description: DIODE SCHOTTKY 40V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
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STPS2150A STPS2150A STMicroelectronics en.CD00003322.pdf Description: DIODE SCHOTTKY 150V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 150 V
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STPS1L30U STPS1L30U STMicroelectronics en.CD00001323.pdf Description: DIODE SCHOTTKY 30V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 395 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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MJD122T4 MJD122T4 STMicroelectronics mjd122t4.pdf Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 20 W
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STS8DNF3LL STS8DNF3LL STMicroelectronics en.CD00002234.pdf description Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
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MJD127T4 MJD127T4 STMicroelectronics mjd122t4.pdf Description: TRANS PNP DARL 100V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 20 W
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STD50NH02LT4 STD50NH02LT4 STMicroelectronics en.CD00003108.pdf Description: MOSFET N-CH 24V 50A DPAK
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MJD50T4 MJD50T4 STMicroelectronics MJD50.pdf Description: TRANS NPN 400V 1A DPAK
Power - Max: 15 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: DPAK
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STS25NH3LL STS25NH3LL STMicroelectronics en.CD00002900.pdf Description: MOSFET N-CH 30V 25A 8SO
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STD35NF3LLT4 STD35NF3LLT4 STMicroelectronics en.CD00002679.pdf Description: MOSFET N-CH 30V 35A DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
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STD5NK40ZT4 STD5NK40ZT4 STMicroelectronics ST%28D%2CP%295NK40Z%28FP%2C-1%29.pdf Description: MOSFET N-CH 400V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 25 V
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MJD47T4 MJD47T4 STMicroelectronics MJD47.pdf Description: TRANS NPN 250V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 15 W
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STD1NK60T4 STD1NK60T4 STMicroelectronics std1nk60t4.pdf Description: MOSFET N-CH 600V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V
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MJD31CT4 MJD31CT4 STMicroelectronics mjd31c.html Description: TRANS NPN 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 15 W
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STD1HNC60T4 STD1HNC60T4 STMicroelectronics CD00002325.pdf Description: MOSFET N-CH 600V 2A DPAK
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STB4NK60ZT4 STB4NK60ZT4 STMicroelectronics en.CD00003002.pdf Description: MOSFET N-CH 600V 4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
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STD12NF06LT4 STD12NF06LT4 STMicroelectronics en.html Description: MOSFET N-CH 60V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6A, 10V
Power Dissipation (Max): 42.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Qualification: AEC-Q101
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ESDA25B1RL ESDA25B1RL STMicroelectronics en.CD00000839.pdf Description: TVS DIODE 24VWM 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 6
Voltage - Breakdown (Min): 25V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
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STP80NF55-06 en.CD00002670.pdf
STP80NF55-06
Hersteller: STMicroelectronics
Description: MOSFET N-CH 55V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Produkt ist nicht verfügbar
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STY60NM50 en.CD00002391.pdf
STY60NM50
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 60A MAX247
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: MAX247™
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 560W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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STE53NC50 en.CD00002866.pdf
STE53NC50
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 53A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOTOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
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STP55NF06 description en.CD00002311.pdf
STP55NF06
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 27.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 12583 Stücke:
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4+5.38 EUR
50+2.65 EUR
100+2.39 EUR
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STP80NE06-10 STP80NE06-10.pdf
STP80NE06-10
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 80A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STP4NB80 STP4NB80_FP.pdf
STP4NB80
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 4A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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STH15NB50FI STH15NB50FI%2C%20STW15NB50.pdf
STH15NB50FI
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 10.5A ISOWAT218
Packaging: Tube
Package / Case: ISOWATT-218-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOWATT-218
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Produkt ist nicht verfügbar
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STW9NK90Z en.CD00003327.pdf
STW9NK90Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 900V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 25 V
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STP9NK90Z description en.CD00003327.pdf
STP9NK90Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 900V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 25 V
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50+4.96 EUR
100+4.51 EUR
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STP6NB90 STP6NB90.pdf
STP6NB90
Hersteller: STMicroelectronics
Description: MOSFET N-CH 900V 5.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
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STP50NE08 STP50NE08.pdf
STP50NE08
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Produkt ist nicht verfügbar
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STP75NF75 ST%28B%2CP%2975NF75%28FP%29.pdf
STP75NF75
Hersteller: STMicroelectronics
Description: MOSFET N-CH 75V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Produkt ist nicht verfügbar
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STW11NB80 STW11NB80.pdf
STW11NB80
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 5.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Produkt ist nicht verfügbar
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STW80NE06-10 STW80NE06-10.pdf
STW80NE06-10
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 80A TO247-3
Produkt ist nicht verfügbar
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VNP5N07 VNP5N07.pdf
VNP5N07
Hersteller: STMicroelectronics
Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: TO-220
Ratio - Input:Output: 1:1
Current - Output (Max): 3.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 55V (Max)
Input Type: Non-Inverting
Rds On (Typ): 200mOhm (Max)
Output Configuration: Low Side
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: TO-220-3
Features: Status Flag
Packaging: Tube
Produkt ist nicht verfügbar
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VNP35N07 description en.CD00000045.pdf
VNP35N07
Hersteller: STMicroelectronics
Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Packaging: Tube
Features: Status Flag
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 280mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 55V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Produkt ist nicht verfügbar
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VNP20N07 en.CD00000218.pdf
VNP20N07
Hersteller: STMicroelectronics
Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Packaging: Tube
Features: Status Flag
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 50mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 55V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 14A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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VNB20N07 description en.CD00000232.pdf
VNB20N07
Hersteller: STMicroelectronics
Description: IC PWR DRIVER N-CHAN 1:1 D2PAK
Packaging: Tube
Features: Status Flag
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 50mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 55V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 14A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Produkt ist nicht verfügbar
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VNP10N07 en.CD00000216.pdf
VNP10N07
Hersteller: STMicroelectronics
Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 100mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 55V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 14A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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VNP10N07FI en.CD00000230.pdf
VNP10N07FI
Hersteller: STMicroelectronics
Description: IC PWR DRVR N-CH 1:1 ISOWATT220
Packaging: Tube
Package / Case: ISOWATT-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 100mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 55V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 14A
Ratio - Input:Output: 1:1
Supplier Device Package: ISOWATT-220
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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BU931T en.CD00000005.pdf
BU931T
Hersteller: STMicroelectronics
Description: TRANS NPN DARL 400V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 250mA, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
Supplier Device Package: TO-220
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 125 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STTH310 en.CD00003263.pdf
STTH310
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1000V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 296 Stücke:
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39+0.55 EUR
46+0.46 EUR
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STTH208 en.CD00003262.pdf
STTH208
Hersteller: STMicroelectronics
Description: DIODE STANDARD 800V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1564 Stücke:
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19+1.11 EUR
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STTH110 description en.CD00003261.pdf
STTH110
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1436 Stücke:
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23+0.94 EUR
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STTH302 en.CD00002693.pdf
STTH302
Hersteller: STMicroelectronics
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
auf Bestellung 719 Stücke:
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63+0.33 EUR
69+0.31 EUR
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BYT01-400 BYT01-400.pdf
BYT01-400
Hersteller: STMicroelectronics
Description: DIODE STANDARD 400V 1A DO15
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STPS1150 en.CD00003321.pdf
STPS1150
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 150V 1A DO41
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
auf Bestellung 1743 Stücke:
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AnzahlPrivatkunde
59+0.36 EUR
94+0.23 EUR
102+0.2 EUR
1000+0.18 EUR
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STGD3NB60FT4 STGx3NB60F%28D%29.pdf
STGD3NB60FT4
Hersteller: STMicroelectronics
Description: IGBT 600V 6A 60W DPAK
Power - Max: 60 W
Current - Collector Pulsed (Icm): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Gate Charge: 16 nC
Test Condition: 480V, 3A, 10Ohm, 15V
Switching Energy: 125µJ (off)
Td (on/off) @ 25°C: 12.5ns/105ns
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Reverse Recovery Time (trr): 45 ns
Input Type: Standard
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STB11NK50ZT4 en.CD00003024.pdf
STB11NK50ZT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 10A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 427 Stücke:
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AnzahlPrivatkunde
7+3.27 EUR
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STB120NF10T4 en.CD00003356.pdf
STB120NF10T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 60A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
auf Bestellung 8155 Stücke:
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3+10.41 EUR
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STPS140A en.CD00001107.pdf
STPS140A
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 12 µA @ 40 V
auf Bestellung 46360 Stücke:
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34+0.63 EUR
63+0.33 EUR
100+0.27 EUR
500+0.2 EUR
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2000+0.17 EUR
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STPS3L60S en.CD00001711.pdf
STPS3L60S
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 60V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 55 µA @ 60 V
auf Bestellung 20416 Stücke:
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25+0.83 EUR
38+0.56 EUR
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CLT3-4BT6-TR cd00002914.pdf
CLT3-4BT6-TR
Hersteller: STMicroelectronics
Description: TVS DEVICE MIXED 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Applications: General Purpose
Technology: Mixed Technology
Supplier Device Package: 20-TSSOP
Part Status: Active
Number of Circuits: 4
auf Bestellung 5274 Stücke:
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4+6.7 EUR
10+4.38 EUR
100+3.05 EUR
500+2.49 EUR
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STPS20H100CG-TR en.CD00001292.pdf
STPS20H100CG-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOT 100V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
auf Bestellung 3968 Stücke:
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15+1.46 EUR
17+1.26 EUR
100+1.25 EUR
500+0.99 EUR
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LCP1511DRL CD00000854.pdf
LCP1511DRL
Hersteller: STMicroelectronics
Description: THYRISTOR 30A 8SOIC
Produkt ist nicht verfügbar
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STTH108A en.CD00003259.pdf
STTH108A
Hersteller: STMicroelectronics
Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 34824 Stücke:
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25+0.86 EUR
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STTH112U en.CD00003260.pdf
STTH112U
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1200V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
auf Bestellung 20039 Stücke:
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19+1.11 EUR
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STPS2L60A en.CD00003166.pdf
STPS2L60A
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
auf Bestellung 35164 Stücke:
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22+0.96 EUR
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MJD112T4 description MJD112T4.pdf
MJD112T4
Hersteller: STMicroelectronics
Description: TRANS NPN DARL 100V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 20 W
auf Bestellung 7547 Stücke:
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12+1.87 EUR
18+1.17 EUR
100+0.76 EUR
500+0.58 EUR
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STPS1L60A en.CD00002285.pdf
STPS1L60A
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 60V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
auf Bestellung 38408 Stücke:
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30+0.71 EUR
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STPS340S en.CD00000844.pdf
STPS340S
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
auf Bestellung 9315 Stücke:
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24+0.9 EUR
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STPS340U description en.CD00000844.pdf
STPS340U
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
auf Bestellung 12653 Stücke:
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24+0.88 EUR
39+0.55 EUR
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STPS340B-TR en.CD00000844.pdf
STPS340B-TR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
auf Bestellung 7982 Stücke:
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AnzahlPrivatkunde
7+3.14 EUR
11+2 EUR
100+1.33 EUR
500+1.05 EUR
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STPS2150A en.CD00003322.pdf
STPS2150A
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 150V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 150 V
auf Bestellung 61226 Stücke:
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20+1.05 EUR
33+0.64 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.27 EUR
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STPS1L30U en.CD00001323.pdf
STPS1L30U
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 30V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 395 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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MJD122T4 mjd122t4.pdf
MJD122T4
Hersteller: STMicroelectronics
Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 20 W
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STS8DNF3LL description en.CD00002234.pdf
STS8DNF3LL
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
auf Bestellung 6889 Stücke:
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MJD127T4 mjd122t4.pdf
MJD127T4
Hersteller: STMicroelectronics
Description: TRANS PNP DARL 100V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 20 W
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STD50NH02LT4 en.CD00003108.pdf
STD50NH02LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 24V 50A DPAK
Produkt ist nicht verfügbar
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MJD50T4 MJD50.pdf
MJD50T4
Hersteller: STMicroelectronics
Description: TRANS NPN 400V 1A DPAK
Power - Max: 15 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: DPAK
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STS25NH3LL en.CD00002900.pdf
STS25NH3LL
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 25A 8SO
Produkt ist nicht verfügbar
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STD35NF3LLT4 en.CD00002679.pdf
STD35NF3LLT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 35A DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
auf Bestellung 785 Stücke:
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STD5NK40ZT4 ST%28D%2CP%295NK40Z%28FP%2C-1%29.pdf
STD5NK40ZT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 25 V
auf Bestellung 2731 Stücke:
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6+3.52 EUR
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MJD47T4 MJD47.pdf
MJD47T4
Hersteller: STMicroelectronics
Description: TRANS NPN 250V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 15 W
auf Bestellung 9407 Stücke:
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STD1NK60T4 std1nk60t4.pdf
STD1NK60T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V
auf Bestellung 2149 Stücke:
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7+3.01 EUR
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MJD31CT4 mjd31c.html
MJD31CT4
Hersteller: STMicroelectronics
Description: TRANS NPN 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 15 W
auf Bestellung 1332 Stücke:
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9+2.57 EUR
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STD1HNC60T4 CD00002325.pdf
STD1HNC60T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 2A DPAK
Produkt ist nicht verfügbar
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STB4NK60ZT4 en.CD00003002.pdf
STB4NK60ZT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
auf Bestellung 4232 Stücke:
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5+5.15 EUR
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STD12NF06LT4 en.html
STD12NF06LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6A, 10V
Power Dissipation (Max): 42.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2201 Stücke:
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10+2.15 EUR
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ESDA25B1RL en.CD00000839.pdf
ESDA25B1RL
Hersteller: STMicroelectronics
Description: TVS DIODE 24VWM 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 6
Voltage - Breakdown (Min): 25V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
auf Bestellung 7788 Stücke:
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