Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13019) > Seite 76 nach 217
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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TC74LCX273FT-ELK | Toshiba Semiconductor and Storage | Description: IC D-TYPE POS TRG SNGL 20TSSOP |
Produkt ist nicht verfügbar |
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HN1D01FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6 ns Technology: Standard Diode Configuration: 2 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: ES6 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
auf Bestellung 1180 Stücke: Lieferzeit 21-28 Tag (e) |
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HN1D02FE,LF | Toshiba Semiconductor and Storage | Description: DIODE ARRAY GP 80V 100MA ES6 |
Produkt ist nicht verfügbar |
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RN1504(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.3W SMV |
Produkt ist nicht verfügbar |
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RN1702JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ESV |
auf Bestellung 1214 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1111,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 50V 0.1A SSM |
auf Bestellung 2089 Stücke: Lieferzeit 21-28 Tag (e) |
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HN1A01F-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP 50V 0.15A SM6 Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 125°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SM6 Part Status: Active |
Produkt ist nicht verfügbar |
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2SA1162-O,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
auf Bestellung 5385 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC5087R(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 12V 8GHZ SMQ Packaging: Cut Tape (CT) Package / Case: SC-61AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz Supplier Device Package: SMQ Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1505(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.3W SMV |
Produkt ist nicht verfügbar |
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RN2903(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRAN DUAL PNP US6 -50V -100A |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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TC75S59FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 1 GEN PUR ESV Packaging: Cut Tape (CT) Package / Case: SOT-553 Output Type: Open-Drain Mounting Type: Surface Mount Number of Elements: 1 Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Supplier Device Package: ESV Propagation Delay (Max): 200ns Current - Quiescent (Max): 220µA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 1pA Current - Output (Typ): 25mA |
Produkt ist nicht verfügbar |
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RN1506(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.3W SMV |
Produkt ist nicht verfügbar |
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RN1603(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.3W SM6 |
Produkt ist nicht verfügbar |
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RN1606(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.3W SM6 |
auf Bestellung 390 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1409(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRAN NPN S-MINI 50V 100A |
auf Bestellung 2990 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1414,LF(B | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.2W S-MINI |
auf Bestellung 5195 Stücke: Lieferzeit 21-28 Tag (e) |
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TC75S57F,LF | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 1 GEN PUR SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Supplier Device Package: SMV Propagation Delay (Max): 140ns Current - Quiescent (Max): 220µA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 1pA Current - Output (Typ): 25mA Part Status: Active |
auf Bestellung 1173 Stücke: Lieferzeit 21-28 Tag (e) |
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HN1D03FU,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 80MA US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Pair CA + CC Current - Average Rectified (Io) (per Diode): 80mA Supplier Device Package: US6 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
auf Bestellung 4518 Stücke: Lieferzeit 21-28 Tag (e) |
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RN2706JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.1W ESV |
Produkt ist nicht verfügbar |
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RN1901,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.2W US6 |
Produkt ist nicht verfügbar |
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RN4902FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
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RN2702JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.1W ESV |
Produkt ist nicht verfügbar |
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RN4905FE,LF(CB | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.1W ES6 |
auf Bestellung 3880 Stücke: Lieferzeit 21-28 Tag (e) |
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HN1C03F-B(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN 20V 0.3A SM6 |
auf Bestellung 2723 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1586-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
auf Bestellung 17162 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC5087-O(TE85L,F) | Toshiba Semiconductor and Storage | Description: RF TRANS NPN 12V 7GHZ SMQ |
Produkt ist nicht verfügbar |
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TC75S56F,LF | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 1 GEN PUR SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Supplier Device Package: SMV Propagation Delay (Max): 680ns Current - Quiescent (Max): 22µA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 1pA @ 5V Current - Output (Typ): 25mA Part Status: Active |
auf Bestellung 13522 Stücke: Lieferzeit 21-28 Tag (e) |
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1SV307(TPH3,F) | Toshiba Semiconductor and Storage |
Description: RF DIODE STANDARD 30V USC Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Diode Type: PIN - Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 30V Supplier Device Package: USC Current - Max: 50 mA |
auf Bestellung 3078 Stücke: Lieferzeit 21-28 Tag (e) |
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RN2501(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.3W SMV |
Produkt ist nicht verfügbar |
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RN2905FE,LF(CB | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
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HN2C01FU-GR(T5L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN 50V 0.15A US6 |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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RN4906FE,LF(CB | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
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2SC2714-O(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 30V 550MHZ SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 23dB Power - Max: 100mW Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 30V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.5dB @ 100MHz Supplier Device Package: S-Mini Part Status: Active |
Produkt ist nicht verfügbar |
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RN1501(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.3W SMV |
Produkt ist nicht verfügbar |
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2SC4207-BL(TE85L,F | Toshiba Semiconductor and Storage | Description: TRANS 2NPN 50V 0.15A SMV |
Produkt ist nicht verfügbar |
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2SC5108-Y,LF | Toshiba Semiconductor and Storage | Description: RF TRANS NPN 10V 6GHZ SSM |
Produkt ist nicht verfügbar |
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RN1607(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.3W SM6 Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SM6 |
auf Bestellung 4271 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1162-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
auf Bestellung 11061 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1502(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.3W SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SMV |
auf Bestellung 38669 Stücke: Lieferzeit 21-28 Tag (e) |
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RN4605(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.3W SM6 |
auf Bestellung 250 Stücke: Lieferzeit 21-28 Tag (e) |
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TC7SET17FU,LF | Toshiba Semiconductor and Storage | Description: IC GATE SMV L-MOS USV |
auf Bestellung 1193 Stücke: Lieferzeit 21-28 Tag (e) |
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RN2102,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 50V 0.1A SSM |
Produkt ist nicht verfügbar |
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TC75W57FU,LF | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 2 GEN PUR 8SSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Supplier Device Package: 8-SSOP Propagation Delay (Max): 140ns Current - Quiescent (Max): 400µA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 1pA @ 5V Current - Output (Typ): 25mA |
auf Bestellung 23111 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1706JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.1W ESV Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ESV Part Status: Active |
Produkt ist nicht verfügbar |
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HN2D01FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 80MA US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 80mA Supplier Device Package: US6 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
Produkt ist nicht verfügbar |
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2SA1586-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
auf Bestellung 31574 Stücke: Lieferzeit 21-28 Tag (e) |
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HN1B01F-GR(TE85L,F | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP 50V 0.15A SM6 |
Produkt ist nicht verfügbar |
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TC75S57FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 1 GEN PUR 5SSOP Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Supplier Device Package: 5-SSOP Propagation Delay (Max): 140ns Current - Quiescent (Max): 220µA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 1pA Current - Output (Typ): 25mA Part Status: Active |
auf Bestellung 17756 Stücke: Lieferzeit 21-28 Tag (e) |
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HN1B01F-Y(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP 50V 0.15A SM6 |
Produkt ist nicht verfügbar |
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RN2502(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.3W SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SMV Part Status: Active |
auf Bestellung 2770 Stücke: Lieferzeit 21-28 Tag (e) |
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TC75S54FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC OPAMP GP 1 CIRCUIT 5SSOP Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 100µA Slew Rate: 0.7V/µs Current - Input Bias: 1 pA Voltage - Input Offset: 2 mV Supplier Device Package: 5-SSOP Part Status: Active Number of Circuits: 1 Current - Output / Channel: 700 µA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 7 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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TC7SH126FU(T5L,F,T | Toshiba Semiconductor and Storage | Description: IC GATE L-MOS USV |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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HN1C03FU-B(TE85L,F | Toshiba Semiconductor and Storage | Description: TRANS 2NPN 20V 0.3A US6 |
Produkt ist nicht verfügbar |
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RN4986FE(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRAN DUAL NPN/PNP 50V 100MA ES6 |
auf Bestellung 3500 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC4738-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SSM Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
auf Bestellung 5745 Stücke: Lieferzeit 21-28 Tag (e) |
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TC75W51FK(TE85L,F) | Toshiba Semiconductor and Storage | Description: CMOS TYPE OP AMP IC DUAL US8 |
auf Bestellung 5795 Stücke: Lieferzeit 21-28 Tag (e) |
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HN1A01F-GR(TE85L,F | Toshiba Semiconductor and Storage | Description: TRANS 2PNP 50V 0.15A SM6 |
Produkt ist nicht verfügbar |
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2SC5066-Y,LF | Toshiba Semiconductor and Storage | Description: RF TRANS NPN 12V 7GHZ SSM |
Produkt ist nicht verfügbar |
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2SA1182-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 30V 0.5A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 150 mW |
Produkt ist nicht verfügbar |
TC74LCX273FT-ELK |
Hersteller: Toshiba Semiconductor and Storage
Description: IC D-TYPE POS TRG SNGL 20TSSOP
Description: IC D-TYPE POS TRG SNGL 20TSSOP
Produkt ist nicht verfügbar
HN1D01FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: ES6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: ES6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 1180 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 1.09 EUR |
34+ | 0.77 EUR |
100+ | 0.39 EUR |
500+ | 0.32 EUR |
1000+ | 0.23 EUR |
HN1D02FE,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA ES6
Description: DIODE ARRAY GP 80V 100MA ES6
Produkt ist nicht verfügbar
RN1504(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Description: TRANS 2NPN PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
RN1702JE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
Description: TRANS 2NPN PREBIAS 0.1W ESV
auf Bestellung 1214 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 1.14 EUR |
31+ | 0.84 EUR |
100+ | 0.48 EUR |
500+ | 0.32 EUR |
1000+ | 0.24 EUR |
RN1111,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 2089 Stücke:
Lieferzeit 21-28 Tag (e)HN1A01F-Y(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SM6
Part Status: Active
Description: TRANS 2PNP 50V 0.15A SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SM6
Part Status: Active
Produkt ist nicht verfügbar
2SA1162-O,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 5385 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 0.42 EUR |
87+ | 0.3 EUR |
163+ | 0.16 EUR |
500+ | 0.13 EUR |
1000+ | 0.087 EUR |
2SC5087R(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 8GHZ SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz
Supplier Device Package: SMQ
Part Status: Active
Description: RF TRANS NPN 12V 8GHZ SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz
Supplier Device Package: SMQ
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)RN1505(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Description: TRANS 2NPN PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
RN2903(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL PNP US6 -50V -100A
Description: TRAN DUAL PNP US6 -50V -100A
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)TC75S59FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: ESV
Propagation Delay (Max): 200ns
Current - Quiescent (Max): 220µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 25mA
Description: IC COMPARATOR 1 GEN PUR ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: ESV
Propagation Delay (Max): 200ns
Current - Quiescent (Max): 220µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 25mA
Produkt ist nicht verfügbar
RN1506(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Description: TRANS 2NPN PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
RN1603(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Description: TRANS 2NPN PREBIAS 0.3W SM6
Produkt ist nicht verfügbar
RN1606(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Description: TRANS 2NPN PREBIAS 0.3W SM6
auf Bestellung 390 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 1.2 EUR |
30+ | 0.88 EUR |
100+ | 0.5 EUR |
RN1409(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN NPN S-MINI 50V 100A
Description: TRAN NPN S-MINI 50V 100A
auf Bestellung 2990 Stücke:
Lieferzeit 21-28 Tag (e)RN1414,LF(B |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
Description: TRANS PREBIAS NPN 0.2W S-MINI
auf Bestellung 5195 Stücke:
Lieferzeit 21-28 Tag (e)TC75S57F,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: SMV
Propagation Delay (Max): 140ns
Current - Quiescent (Max): 220µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 25mA
Part Status: Active
Description: IC COMPARATOR 1 GEN PUR SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: SMV
Propagation Delay (Max): 140ns
Current - Quiescent (Max): 220µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 25mA
Part Status: Active
auf Bestellung 1173 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 1.22 EUR |
27+ | 0.99 EUR |
29+ | 0.91 EUR |
100+ | 0.68 EUR |
250+ | 0.61 EUR |
500+ | 0.51 EUR |
1000+ | 0.38 EUR |
HN1D03FU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair CA + CC
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 80MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair CA + CC
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 4518 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
31+ | 0.86 EUR |
44+ | 0.6 EUR |
100+ | 0.3 EUR |
500+ | 0.24 EUR |
1000+ | 0.18 EUR |
RN2706JE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Description: TRANS 2PNP PREBIAS 0.1W ESV
Produkt ist nicht verfügbar
RN1901,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Description: TRANS 2NPN PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4902FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN2702JE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Description: TRANS 2PNP PREBIAS 0.1W ESV
Produkt ist nicht verfügbar
RN4905FE,LF(CB |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 3880 Stücke:
Lieferzeit 21-28 Tag (e)HN1C03F-B(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 20V 0.3A SM6
Description: TRANS 2NPN 20V 0.3A SM6
auf Bestellung 2723 Stücke:
Lieferzeit 21-28 Tag (e)2SA1586-GR,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS PNP 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 17162 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 0.42 EUR |
87+ | 0.3 EUR |
163+ | 0.16 EUR |
500+ | 0.13 EUR |
1000+ | 0.087 EUR |
2SC5087-O(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SMQ
Description: RF TRANS NPN 12V 7GHZ SMQ
Produkt ist nicht verfügbar
TC75S56F,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: SMV
Propagation Delay (Max): 680ns
Current - Quiescent (Max): 22µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Part Status: Active
Description: IC COMPARATOR 1 GEN PUR SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: SMV
Propagation Delay (Max): 680ns
Current - Quiescent (Max): 22µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Part Status: Active
auf Bestellung 13522 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 1.2 EUR |
28+ | 0.96 EUR |
30+ | 0.88 EUR |
100+ | 0.65 EUR |
250+ | 0.59 EUR |
500+ | 0.49 EUR |
1000+ | 0.37 EUR |
1SV307(TPH3,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE STANDARD 30V USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: USC
Current - Max: 50 mA
Description: RF DIODE STANDARD 30V USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: USC
Current - Max: 50 mA
auf Bestellung 3078 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.04 EUR |
36+ | 0.73 EUR |
100+ | 0.37 EUR |
500+ | 0.32 EUR |
1000+ | 0.25 EUR |
RN2501(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Description: TRANS 2PNP PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
RN2905FE,LF(CB |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
HN2C01FU-GR(T5L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A US6
Description: TRANS 2NPN 50V 0.15A US6
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)RN4906FE,LF(CB |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
2SC2714-O(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Description: RF TRANS NPN 30V 550MHZ SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Produkt ist nicht verfügbar
RN1501(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Description: TRANS 2NPN PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
2SC4207-BL(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A SMV
Description: TRANS 2NPN 50V 0.15A SMV
Produkt ist nicht verfügbar
2SC5108-Y,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 6GHZ SSM
Description: RF TRANS NPN 10V 6GHZ SSM
Produkt ist nicht verfügbar
RN1607(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
auf Bestellung 4271 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 1.09 EUR |
35+ | 0.76 EUR |
100+ | 0.38 EUR |
500+ | 0.31 EUR |
1000+ | 0.23 EUR |
2SA1162-Y,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 11061 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 0.42 EUR |
87+ | 0.3 EUR |
163+ | 0.16 EUR |
500+ | 0.13 EUR |
1000+ | 0.087 EUR |
RN1502(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SMV
Description: TRANS 2NPN PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SMV
auf Bestellung 38669 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 1.09 EUR |
34+ | 0.77 EUR |
100+ | 0.39 EUR |
500+ | 0.32 EUR |
1000+ | 0.23 EUR |
RN4605(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
auf Bestellung 250 Stücke:
Lieferzeit 21-28 Tag (e)TC7SET17FU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE SMV L-MOS USV
Description: IC GATE SMV L-MOS USV
auf Bestellung 1193 Stücke:
Lieferzeit 21-28 Tag (e)RN2102,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
TC75W57FU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 2 GEN PUR 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 8-SSOP
Propagation Delay (Max): 140ns
Current - Quiescent (Max): 400µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Description: IC COMPARATOR 2 GEN PUR 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 8-SSOP
Propagation Delay (Max): 140ns
Current - Quiescent (Max): 400µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
auf Bestellung 23111 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 1.38 EUR |
22+ | 1.2 EUR |
25+ | 1.13 EUR |
100+ | 0.92 EUR |
250+ | 0.85 EUR |
500+ | 0.73 EUR |
1000+ | 0.58 EUR |
RN1706JE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
Description: TRANS 2NPN PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
Produkt ist nicht verfügbar
HN2D01FU(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 80MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
2SA1586-Y,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS PNP 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 31574 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 0.42 EUR |
87+ | 0.3 EUR |
163+ | 0.16 EUR |
500+ | 0.13 EUR |
1000+ | 0.087 EUR |
HN1B01F-GR(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A SM6
Description: TRANS NPN/PNP 50V 0.15A SM6
Produkt ist nicht verfügbar
TC75S57FU(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 5-SSOP
Propagation Delay (Max): 140ns
Current - Quiescent (Max): 220µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 25mA
Part Status: Active
Description: IC COMPARATOR 1 GEN PUR 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 5-SSOP
Propagation Delay (Max): 140ns
Current - Quiescent (Max): 220µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 25mA
Part Status: Active
auf Bestellung 17756 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 1.01 EUR |
31+ | 0.87 EUR |
33+ | 0.81 EUR |
100+ | 0.65 EUR |
250+ | 0.6 EUR |
500+ | 0.51 EUR |
1000+ | 0.39 EUR |
HN1B01F-Y(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A SM6
Description: TRANS NPN/PNP 50V 0.15A SM6
Produkt ist nicht verfügbar
RN2502(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SMV
Part Status: Active
Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SMV
Part Status: Active
auf Bestellung 2770 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 1.22 EUR |
29+ | 0.9 EUR |
100+ | 0.51 EUR |
500+ | 0.34 EUR |
1000+ | 0.26 EUR |
TC75S54FU(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 100µA
Slew Rate: 0.7V/µs
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 700 µA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 7 V
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 100µA
Slew Rate: 0.7V/µs
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 700 µA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 7 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 1.27 EUR |
26+ | 1.03 EUR |
28+ | 0.94 EUR |
100+ | 0.7 EUR |
250+ | 0.63 EUR |
500+ | 0.52 EUR |
1000+ | 0.39 EUR |
TC7SH126FU(T5L,F,T |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE L-MOS USV
Description: IC GATE L-MOS USV
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)HN1C03FU-B(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 20V 0.3A US6
Description: TRANS 2NPN 20V 0.3A US6
Produkt ist nicht verfügbar
RN4986FE(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)2SC4738-GR,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 5745 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 0.47 EUR |
79+ | 0.33 EUR |
163+ | 0.16 EUR |
500+ | 0.13 EUR |
1000+ | 0.093 EUR |
TC75W51FK(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: CMOS TYPE OP AMP IC DUAL US8
Description: CMOS TYPE OP AMP IC DUAL US8
auf Bestellung 5795 Stücke:
Lieferzeit 21-28 Tag (e)HN1A01F-GR(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A SM6
Description: TRANS 2PNP 50V 0.15A SM6
Produkt ist nicht verfügbar
2SC5066-Y,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SSM
Description: RF TRANS NPN 12V 7GHZ SSM
Produkt ist nicht verfügbar
2SA1182-Y,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Description: TRANS PNP 30V 0.5A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Produkt ist nicht verfügbar