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RN2110CT(TPL3) RN2110CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2110CT Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
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RN2111CT(TPL3) RN2111CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2110CT Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
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RN2112CT(TPL3) RN2112CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2112CT Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2113CT(TPL3) RN2113CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2112CT Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
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RN2101ACT(TPL3) RN2101ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2102ACT(TPL3) RN2102ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2103ACT(TPL3) RN2103ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
RN2104ACT(TPL3) RN2104ACT(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=730&prodName=RN2104ACT Description: TRANS PREBIAS PNP 50V 0.08A CST3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2105ACT(TPL3) RN2105ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
RN2106ACT(TPL3) RN2106ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
RN2108ACT(TPL3) RN2108ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2109ACT(TPL3) RN2109ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 9900 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
56+0.32 EUR
100+0.20 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
5000+0.10 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
RN2110ACT(TPL3) RN2110ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
RN2111ACT(TPL3) RN2111ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 10 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
RN2112ACT(TPL3) RN2112ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
RN2113ACT(TPL3) RN2113ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
RN2409(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2409 Description: TRAN PNP S-MINI -50V -100A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2103(T5L,F,T) RN2103(T5L,F,T) Toshiba Semiconductor and Storage RN2101_datasheet_en_20220913.pdf?did=18841&prodName=RN2101 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 1715 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
46+0.38 EUR
100+0.20 EUR
500+0.13 EUR
1000+0.09 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
RN2104(T5L,F,T) RN2104(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2101 Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 727 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
42+0.43 EUR
100+0.23 EUR
500+0.15 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
RN2105(T5L,F,T) RN2105(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2105 Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
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RN2106(T5L,F,T) RN2106(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2101 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
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RN2107(T5L,F,T) RN2107(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2107 Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2108(T5L,F,T) RN2108(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2107 Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
42+0.43 EUR
100+0.23 EUR
500+0.15 EUR
1000+0.10 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
RN2109(T5L,F,T) RN2109(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2107 Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2110(T5L,F,T) RN2110(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2110 Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2111(T5L,F,T) RN2111(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2111 Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2112(T5L,F,T) RN2112(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2112 Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2113(T5L,F,T) RN2113(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2112 Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2114(TE85L,F) RN2114(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2114 Description: TRANS PREBIAS PNP 0.1W SSM
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
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RN2115(T5L,F,T) RN2115(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2115 Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2116(T5L,F,T) RN2116(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2116 Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2117(T5L,F,T) RN2117(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2114 Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2118(T5L,F,T) RN2118(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2114 Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04F(TE85L,F) HN1B04F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=22325&prodName=HN1B04F Description: TRANS NPN/PNP 30V 0.5A SM6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FE-GR,LF HN1B04FE-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=22308&prodName=HN1B04FE Description: TRANS NPN/PNP 50V 0.15A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
41+0.43 EUR
100+0.23 EUR
500+0.15 EUR
1000+0.10 EUR
2000+0.09 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FE-Y,LF HN1B04FE-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=22308&prodName=HN1B04FE Description: TRANS NPN/PNP 50V 0.15A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
HN1B01FU-Y(L,F,T) HN1B01FU-Y(L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=19148&prodName=HN1B01FU Description: TRANS NPN/PNP 50V 0.15A US6
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
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HN1B04FU-Y(T5L,F,T HN1B04FU-Y(T5L,F,T Toshiba Semiconductor and Storage docget.jsp?did=19150&prodName=HN1B04FU Description: TRANS NPN/PNP 50V 0.15A US6
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1701JE(TE85L,F) RN1701JE(TE85L,F) Toshiba Semiconductor and Storage RN1701JE_datasheet_en_20140301.pdf?did=19121&prodName=RN1701JE Description: TRANS 2NPN PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ESV
auf Bestellung 9425 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
35+0.50 EUR
100+0.25 EUR
500+0.21 EUR
1000+0.15 EUR
2000+0.13 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
2SC5096-O,LF 2SC5096-O,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=2SC5096 Description: TRANS RF NPN 10V 1GHZ SSM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC5096-R,LF 2SC5096-R,LF Toshiba Semiconductor and Storage Description: RF TRANS NPN 10V 10GHZ SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 1.4dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Supplier Device Package: SSM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT3S20P(TE12L,F) MT3S20P(TE12L,F) Toshiba Semiconductor and Storage docget.jsp?did=2066&prodName=MT3S20P Description: RF TRANS NPN 12V 7GHZ PW-MINI
auf Bestellung 145 Stücke:
Lieferzeit 10-14 Tag (e)
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2SC5066-O,LF 2SC5066-O,LF Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SSM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC5086-O,LF 2SC5086-O,LF Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SSM
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5065-O(TE85L,F) 2SC5065-O(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5085-O(TE85L,F) 2SC5085-O(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5088-O(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 18dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: USQ
Part Status: Obsolete
Produkt ist nicht verfügbar
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MT3S15TU(TE85L) MT3S15TU(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=MT3S15TU Description: TRANS RF NPN 6V 1GHZ UFM
Produkt ist nicht verfügbar
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TC7SET86FU(T5L,F,T TC7SET86FU(T5L,F,T Toshiba Semiconductor and Storage Description: IC GATE XOR 1CH 2-INP USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 10.3ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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1SS307(TE85L,F) 1SS307(TE85L,F) Toshiba Semiconductor and Storage 1SS307_datasheet_en_20210625.pdf?did=3301&prodName=1SS307 Description: DIODE GEN PURP 30V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 30 V
auf Bestellung 7993 Stücke:
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31+0.58 EUR
46+0.39 EUR
100+0.26 EUR
500+0.20 EUR
1000+0.18 EUR
Mindestbestellmenge: 31
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RN1503(TE85L,F) RN1503(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1503 Description: TRANS 2NPN PREBIAS 0.3W SMV
auf Bestellung 1846 Stücke:
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RN1510(TE85L,F) RN1510(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1510 Description: TRANS 2NPN PREBIAS 0.3W SMV
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RN1907,LF(CT RN1907,LF(CT Toshiba Semiconductor and Storage Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
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HN2A01FU-Y(TE85L,F HN2A01FU-Y(TE85L,F Toshiba Semiconductor and Storage docget.jsp?did=19159&prodName=HN2A01FU Description: TRANS 2PNP 50V 0.15A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
auf Bestellung 2298 Stücke:
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23+0.77 EUR
34+0.53 EUR
100+0.27 EUR
500+0.22 EUR
1000+0.16 EUR
Mindestbestellmenge: 23
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RN2107ACT(TPL3) RN2107ACT(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=1086&prodName=RN2107ACT Description: TRANS PREBIAS PNP 50V 0.08A CST3
Produkt ist nicht verfügbar
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MT3S16U(TE85L,F) MT3S16U(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=MT3S16U Description: TRANS RF NPN 5V 1GHZ USM
auf Bestellung 8876 Stücke:
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2SC5086-Y,LF 2SC5086-Y,LF Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SSM
Part Status: Obsolete
Produkt ist nicht verfügbar
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TC75S101FE,LM(T TC75S101FE,LM(T Toshiba Semiconductor and Storage docget.jsp?did=11316&prodName=TC75S101F Description: IC OPAMP GP 1 CIRCUIT ESV
Produkt ist nicht verfügbar
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TC74LCX273FT-ELK TC74LCX273FT-ELK Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC74LCX273FT Description: IC D-TYPE POS TRG SNGL 20TSSOP
Produkt ist nicht verfügbar
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HN1D01FE(TE85L,F) HN1D01FE(TE85L,F) Toshiba Semiconductor and Storage HN1D01FE_datasheet_en_20140301.pdf?did=22427&prodName=HN1D01FE Description: DIODE ARRAY GP 80V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: ES6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 1180 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
34+0.52 EUR
100+0.26 EUR
500+0.21 EUR
1000+0.16 EUR
Mindestbestellmenge: 24
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RN2110CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=RN2110CT
RN2110CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
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RN2111CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=RN2110CT
RN2111CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
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RN2112CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=RN2112CT
RN2112CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
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RN2113CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=RN2112CT
RN2113CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
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RN2101ACT(TPL3)
RN2101ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
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RN2102ACT(TPL3)
RN2102ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Produkt ist nicht verfügbar
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RN2103ACT(TPL3)
RN2103ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
Mindestbestellmenge: 77
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RN2104ACT(TPL3) docget.jsp?did=730&prodName=RN2104ACT
RN2104ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Produkt ist nicht verfügbar
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RN2105ACT(TPL3)
RN2105ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
Mindestbestellmenge: 77
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RN2106ACT(TPL3)
RN2106ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
Mindestbestellmenge: 77
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RN2108ACT(TPL3)
RN2108ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RN2109ACT(TPL3)
RN2109ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 9900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
56+0.32 EUR
100+0.20 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
5000+0.10 EUR
Mindestbestellmenge: 34
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RN2110ACT(TPL3)
RN2110ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
Mindestbestellmenge: 77
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RN2111ACT(TPL3)
RN2111ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 10 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
Mindestbestellmenge: 34
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RN2112ACT(TPL3)
RN2112ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
Mindestbestellmenge: 77
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RN2113ACT(TPL3)
RN2113ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
Mindestbestellmenge: 77
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RN2409(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2409
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN PNP S-MINI -50V -100A
Produkt ist nicht verfügbar
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RN2103(T5L,F,T) RN2101_datasheet_en_20220913.pdf?did=18841&prodName=RN2101
RN2103(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 1715 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
46+0.38 EUR
100+0.20 EUR
500+0.13 EUR
1000+0.09 EUR
Mindestbestellmenge: 39
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RN2104(T5L,F,T) docget.jsp?did=18841&prodName=RN2101
RN2104(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 727 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
42+0.43 EUR
100+0.23 EUR
500+0.15 EUR
Mindestbestellmenge: 35
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RN2105(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2105
RN2105(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
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RN2106(T5L,F,T) docget.jsp?did=18841&prodName=RN2101
RN2106(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
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RN2107(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2107
RN2107(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
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RN2108(T5L,F,T) docget.jsp?did=18845&prodName=RN2107
RN2108(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
42+0.43 EUR
100+0.23 EUR
500+0.15 EUR
1000+0.10 EUR
Mindestbestellmenge: 35
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RN2109(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2107
RN2109(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
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RN2110(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2110
RN2110(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
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RN2111(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2111
RN2111(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
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RN2112(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2112
RN2112(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
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RN2113(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2112
RN2113(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
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RN2114(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2114
RN2114(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W SSM
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
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RN2115(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2115
RN2115(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
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RN2116(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2116
RN2116(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
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RN2117(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2114
RN2117(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
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RN2118(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2114
RN2118(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
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HN1B04F(TE85L,F) docget.jsp?did=22325&prodName=HN1B04F
HN1B04F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 30V 0.5A SM6
Produkt ist nicht verfügbar
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HN1B04FE-GR,LF docget.jsp?did=22308&prodName=HN1B04FE
HN1B04FE-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
41+0.43 EUR
100+0.23 EUR
500+0.15 EUR
1000+0.10 EUR
2000+0.09 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FE-Y,LF docget.jsp?did=22308&prodName=HN1B04FE
HN1B04FE-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
HN1B01FU-Y(L,F,T) docget.jsp?did=19148&prodName=HN1B01FU
HN1B01FU-Y(L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A US6
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FU-Y(T5L,F,T docget.jsp?did=19150&prodName=HN1B04FU
HN1B04FU-Y(T5L,F,T
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A US6
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1701JE(TE85L,F) RN1701JE_datasheet_en_20140301.pdf?did=19121&prodName=RN1701JE
RN1701JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ESV
auf Bestellung 9425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
35+0.50 EUR
100+0.25 EUR
500+0.21 EUR
1000+0.15 EUR
2000+0.13 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
2SC5096-O,LF docget.jsp?type=datasheet&lang=en&pid=2SC5096
2SC5096-O,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS RF NPN 10V 1GHZ SSM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC5096-R,LF
2SC5096-R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 10GHZ SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 1.4dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Supplier Device Package: SSM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT3S20P(TE12L,F) docget.jsp?did=2066&prodName=MT3S20P
MT3S20P(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ PW-MINI
auf Bestellung 145 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
2SC5066-O,LF
2SC5066-O,LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SSM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC5086-O,LF
2SC5086-O,LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SSM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC5065-O(TE85L,F)
2SC5065-O(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC5085-O(TE85L,F)
2SC5085-O(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC5088-O(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 18dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: USQ
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT3S15TU(TE85L) docget.jsp?type=datasheet&lang=en&pid=MT3S15TU
MT3S15TU(TE85L)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS RF NPN 6V 1GHZ UFM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC7SET86FU(T5L,F,T
TC7SET86FU(T5L,F,T
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 10.3ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SS307(TE85L,F) 1SS307_datasheet_en_20210625.pdf?did=3301&prodName=1SS307
1SS307(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 30V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 30 V
auf Bestellung 7993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
46+0.39 EUR
100+0.26 EUR
500+0.20 EUR
1000+0.18 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
RN1503(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1503
RN1503(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
auf Bestellung 1846 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1510(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1510
RN1510(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
auf Bestellung 2965 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN1907,LF(CT
RN1907,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HN2A01FU-Y(TE85L,F docget.jsp?did=19159&prodName=HN2A01FU
HN2A01FU-Y(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
auf Bestellung 2298 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
34+0.53 EUR
100+0.27 EUR
500+0.22 EUR
1000+0.16 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
RN2107ACT(TPL3) docget.jsp?did=1086&prodName=RN2107ACT
RN2107ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT3S16U(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=MT3S16U
MT3S16U(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS RF NPN 5V 1GHZ USM
auf Bestellung 8876 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
2SC5086-Y,LF
2SC5086-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SSM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC75S101FE,LM(T docget.jsp?did=11316&prodName=TC75S101F
TC75S101FE,LM(T
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT ESV
Produkt ist nicht verfügbar
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TC74LCX273FT-ELK docget.jsp?type=datasheet&lang=en&pid=TC74LCX273FT
TC74LCX273FT-ELK
Hersteller: Toshiba Semiconductor and Storage
Description: IC D-TYPE POS TRG SNGL 20TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HN1D01FE(TE85L,F) HN1D01FE_datasheet_en_20140301.pdf?did=22427&prodName=HN1D01FE
HN1D01FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: ES6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 1180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
34+0.52 EUR
100+0.26 EUR
500+0.21 EUR
1000+0.16 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
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