Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13020) > Seite 74 nach 217
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
RN4903(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN4904(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN4907(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN4908(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN4909(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN4910(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN4911(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN49A1(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
Produkt ist nicht verfügbar |
||||||||||||||||
HN1C03FU-A(TE85L,F | Toshiba Semiconductor and Storage | Description: TRANS 2NPN 20V 0.3A US6 |
Produkt ist nicht verfügbar |
||||||||||||||||
HN1C01FE-Y,LF | Toshiba Semiconductor and Storage | Description: TRANS 2NPN 50V 0.15A ES6 |
auf Bestellung 2170 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
HN2C01FE-GR(T5L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN 50V 0.15A ES6 |
Produkt ist nicht verfügbar |
||||||||||||||||
HN1C01FU-Y(T5L,F,T | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 50V 0.15A US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 125°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Part Status: Active |
Produkt ist nicht verfügbar |
||||||||||||||||
HN2C01FU-Y(TE85L,F | Toshiba Semiconductor and Storage | Description: TRANS 2NPN 50V 0.15A US6 |
auf Bestellung 5850 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
2SC2859-GR(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS NPN 30V 0.5A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Frequency - Transition: 300MHz Supplier Device Package: S-Mini Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 150 mW |
Produkt ist nicht verfügbar |
||||||||||||||||
2SC3325-O(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.5A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Frequency - Transition: 300MHz Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
Produkt ist nicht verfügbar |
||||||||||||||||
RN1102CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 20V 0.05A CST3 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN1103CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.05W CST3 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN1104CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.05W CST3 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN1105CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.05W CST3 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN1106CT(TPL3) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 20V 0.05A CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Supplier Device Package: CST3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 50 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
||||||||||||||||
RN1107CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.05W CST3 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN1108CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.05W CST3 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN1109CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.05W CST3 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN1110CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.05W CST3 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN1111CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.05W CST3 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN1112CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.05W CST3 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN1113CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.05W CST3 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN1102ACT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 50V 0.08A CST3 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN1103ACT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W CST3 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN1104ACT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W CST3 |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
RN1105ACT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W CST3 |
auf Bestellung 9997 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
RN1106ACT(TPL3) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.08A CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: CST3 Current - Collector (Ic) (Max): 80 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
||||||||||||||||
RN1107ACT(TPL3) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.08A CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: CST3 Part Status: Active Current - Collector (Ic) (Max): 80 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 9440 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||
RN1108ACT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W CST3 |
auf Bestellung 9940 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
RN1109ACT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W CST3 |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
RN1110ACT(TPL3) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.08A CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: CST3 Part Status: Active Current - Collector (Ic) (Max): 80 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Resistor - Base (R1): 47 kOhms |
auf Bestellung 9980 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||
RN1111ACT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W CST3 |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
RN1112ACT(TPL3) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.08A CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: CST3 Part Status: Active Current - Collector (Ic) (Max): 80 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Resistor - Base (R1): 22 kOhms |
auf Bestellung 9945 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||
RN1113ACT(TPL3) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.08A CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: CST3 Part Status: Active Current - Collector (Ic) (Max): 80 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Resistor - Base (R1): 47 kOhms |
auf Bestellung 9990 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||
RN1408(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRAN NPN S-MINI 50V 100A |
Produkt ist nicht verfügbar |
||||||||||||||||
RN1415(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.2W S-MINI |
auf Bestellung 5638 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
RN1416,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.2W S-MINI |
auf Bestellung 1700 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
RN1417(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.2W S-MINI |
auf Bestellung 5880 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
RN1418(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 50V 0.1A SMINI |
auf Bestellung 1099 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
RN1110(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W SSM |
Produkt ist nicht verfügbar |
||||||||||||||||
RN1116(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSM Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 73 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||
HN1A01FE-Y(T5L,F,T | Toshiba Semiconductor and Storage | Description: TRAN DUAL PNP -50V -0.15A ES6 |
Produkt ist nicht verfügbar |
||||||||||||||||
HN2A01FE-GR(TE85LF | Toshiba Semiconductor and Storage | Description: TRANS 2PNP 50V 0.15A ES6 |
Produkt ist nicht verfügbar |
||||||||||||||||
HN2A01FE-Y(TE85L,F | Toshiba Semiconductor and Storage | Description: TRANS 2PNP 50V 0.15A ES6 |
Produkt ist nicht verfügbar |
||||||||||||||||
2SA1618-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP 50V 0.15A SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter Operating Temperature: 125°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SMV Part Status: Active |
auf Bestellung 2937 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||
2SA1587-BL,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 120V 0.1A SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 100 mW |
auf Bestellung 6126 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||
2SA1182-GR(TE85L,F | Toshiba Semiconductor and Storage | Description: TRANS PNP 30V 0.5A S-MINI |
Produkt ist nicht verfügbar |
||||||||||||||||
2SA1182-O(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PNP 30V 0.5A S-MINI |
Produkt ist nicht verfügbar |
||||||||||||||||
RN2101CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 0.05W CST3 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN2102CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 20V 0.05A CST3 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN2103CT(TPL3) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 20V 0.05A CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: CST3 Part Status: Obsolete Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 50 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
Produkt ist nicht verfügbar |
||||||||||||||||
RN2104CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 20V 0.05A CST3 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN2105CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 20V 0.05A CST3 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN2106CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 0.05W CST3 |
Produkt ist nicht verfügbar |
||||||||||||||||
RN2107CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 20V 0.05A CST3 |
Produkt ist nicht verfügbar |
RN4903(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4904(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4907(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4908(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4909(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4910(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4911(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN49A1(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
HN1C03FU-A(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 20V 0.3A US6
Description: TRANS 2NPN 20V 0.3A US6
Produkt ist nicht verfügbar
HN1C01FE-Y,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A ES6
Description: TRANS 2NPN 50V 0.15A ES6
auf Bestellung 2170 Stücke:
Lieferzeit 21-28 Tag (e)HN2C01FE-GR(T5L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A ES6
Description: TRANS 2NPN 50V 0.15A ES6
Produkt ist nicht verfügbar
HN1C01FU-Y(T5L,F,T |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
Description: TRANS 2NPN 50V 0.15A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
Produkt ist nicht verfügbar
HN2C01FU-Y(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A US6
Description: TRANS 2NPN 50V 0.15A US6
auf Bestellung 5850 Stücke:
Lieferzeit 21-28 Tag (e)2SC2859-GR(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 30V 0.5A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Description: TRANS NPN 30V 0.5A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
2SC3325-O(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.5A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS NPN 50V 0.5A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
RN1102CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 20V 0.05A CST3
Description: TRANS PREBIAS NPN 20V 0.05A CST3
Produkt ist nicht verfügbar
RN1103CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.05W CST3
Description: TRANS PREBIAS NPN 0.05W CST3
Produkt ist nicht verfügbar
RN1104CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.05W CST3
Description: TRANS PREBIAS NPN 0.05W CST3
Produkt ist nicht verfügbar
RN1105CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.05W CST3
Description: TRANS PREBIAS NPN 0.05W CST3
Produkt ist nicht verfügbar
RN1106CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 20V 0.05A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 50 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 20V 0.05A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 50 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
RN1107CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.05W CST3
Description: TRANS PREBIAS NPN 0.05W CST3
Produkt ist nicht verfügbar
RN1108CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.05W CST3
Description: TRANS PREBIAS NPN 0.05W CST3
Produkt ist nicht verfügbar
RN1109CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.05W CST3
Description: TRANS PREBIAS NPN 0.05W CST3
Produkt ist nicht verfügbar
RN1110CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.05W CST3
Description: TRANS PREBIAS NPN 0.05W CST3
Produkt ist nicht verfügbar
RN1111CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.05W CST3
Description: TRANS PREBIAS NPN 0.05W CST3
Produkt ist nicht verfügbar
RN1112CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.05W CST3
Description: TRANS PREBIAS NPN 0.05W CST3
Produkt ist nicht verfügbar
RN1113CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.05W CST3
Description: TRANS PREBIAS NPN 0.05W CST3
Produkt ist nicht verfügbar
RN1102ACT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Produkt ist nicht verfügbar
RN1103ACT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W CST3
Description: TRANS PREBIAS NPN 0.1W CST3
Produkt ist nicht verfügbar
RN1104ACT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W CST3
Description: TRANS PREBIAS NPN 0.1W CST3
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)RN1105ACT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W CST3
Description: TRANS PREBIAS NPN 0.1W CST3
auf Bestellung 9997 Stücke:
Lieferzeit 21-28 Tag (e)RN1106ACT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
RN1107ACT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 9440 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 0.88 EUR |
40+ | 0.66 EUR |
100+ | 0.38 EUR |
500+ | 0.25 EUR |
1000+ | 0.19 EUR |
2000+ | 0.17 EUR |
5000+ | 0.15 EUR |
RN1108ACT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W CST3
Description: TRANS PREBIAS NPN 0.1W CST3
auf Bestellung 9940 Stücke:
Lieferzeit 21-28 Tag (e)RN1109ACT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W CST3
Description: TRANS PREBIAS NPN 0.1W CST3
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)RN1110ACT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
auf Bestellung 9980 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 0.88 EUR |
40+ | 0.66 EUR |
100+ | 0.38 EUR |
500+ | 0.25 EUR |
1000+ | 0.19 EUR |
2000+ | 0.17 EUR |
5000+ | 0.15 EUR |
RN1111ACT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W CST3
Description: TRANS PREBIAS NPN 0.1W CST3
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)RN1112ACT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
auf Bestellung 9945 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
33+ | 0.81 EUR |
46+ | 0.57 EUR |
100+ | 0.29 EUR |
500+ | 0.23 EUR |
1000+ | 0.17 EUR |
2000+ | 0.15 EUR |
5000+ | 0.14 EUR |
RN1113ACT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
auf Bestellung 9990 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 0.83 EUR |
45+ | 0.58 EUR |
100+ | 0.29 EUR |
500+ | 0.24 EUR |
1000+ | 0.18 EUR |
2000+ | 0.15 EUR |
5000+ | 0.14 EUR |
RN1408(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN NPN S-MINI 50V 100A
Description: TRAN NPN S-MINI 50V 100A
Produkt ist nicht verfügbar
RN1415(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
Description: TRANS PREBIAS NPN 0.2W S-MINI
auf Bestellung 5638 Stücke:
Lieferzeit 21-28 Tag (e)RN1416,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
Description: TRANS PREBIAS NPN 0.2W S-MINI
auf Bestellung 1700 Stücke:
Lieferzeit 21-28 Tag (e)RN1417(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
Description: TRANS PREBIAS NPN 0.2W S-MINI
auf Bestellung 5880 Stücke:
Lieferzeit 21-28 Tag (e)RN1418(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
auf Bestellung 1099 Stücke:
Lieferzeit 21-28 Tag (e)RN1110(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
RN1116(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 73 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 0.73 EUR |
45+ | 0.59 EUR |
HN1A01FE-Y(T5L,F,T |
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL PNP -50V -0.15A ES6
Description: TRAN DUAL PNP -50V -0.15A ES6
Produkt ist nicht verfügbar
HN2A01FE-GR(TE85LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A ES6
Description: TRANS 2PNP 50V 0.15A ES6
Produkt ist nicht verfügbar
HN2A01FE-Y(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A ES6
Description: TRANS 2PNP 50V 0.15A ES6
Produkt ist nicht verfügbar
2SA1618-Y(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Part Status: Active
Description: TRANS 2PNP 50V 0.15A SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Part Status: Active
auf Bestellung 2937 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 1.09 EUR |
34+ | 0.77 EUR |
100+ | 0.39 EUR |
500+ | 0.32 EUR |
1000+ | 0.23 EUR |
2SA1587-BL,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
Description: TRANS PNP 120V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
auf Bestellung 6126 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 0.65 EUR |
60+ | 0.44 EUR |
122+ | 0.21 EUR |
500+ | 0.18 EUR |
1000+ | 0.12 EUR |
2SA1182-GR(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A S-MINI
Description: TRANS PNP 30V 0.5A S-MINI
Produkt ist nicht verfügbar
2SA1182-O(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A S-MINI
Description: TRANS PNP 30V 0.5A S-MINI
Produkt ist nicht verfügbar
RN2101CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
RN2102CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 20V 0.05A CST3
Description: TRANS PREBIAS PNP 20V 0.05A CST3
Produkt ist nicht verfügbar
RN2103CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 20V 0.05A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 50 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 20V 0.05A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 50 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
RN2104CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 20V 0.05A CST3
Description: TRANS PREBIAS PNP 20V 0.05A CST3
Produkt ist nicht verfügbar
RN2105CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 20V 0.05A CST3
Description: TRANS PREBIAS PNP 20V 0.05A CST3
Produkt ist nicht verfügbar
RN2106CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
RN2107CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 20V 0.05A CST3
Description: TRANS PREBIAS PNP 20V 0.05A CST3
Produkt ist nicht verfügbar