Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13614) > Seite 70 nach 227

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RN2963FE(TE85L,F) RN2963FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2961FE Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN2964FE(TE85L,F) RN2964FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2961FE Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN2965FE(TE85L,F) RN2965FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2961FE Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN2966FE(TE85L,F) RN2966FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2961FE Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN2967FE(TE85L,F) RN2967FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2967FE Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN2968FE(TE85L,F) RN2968FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2967FE Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN2969FE(TE85L,F) RN2969FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2967FE Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN2970FE(TE85L,F) RN2970FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2970FE Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN2601(TE85L,F) RN2601(TE85L,F) Toshiba Semiconductor and Storage RN2601-06.pdf Description: TRANS 2PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 253 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.74 EUR
46+0.46 EUR
100+0.29 EUR
Mindestbestellmenge: 29 Stücke
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RN2602(TE85L,F) RN2602(TE85L,F) Toshiba Semiconductor and Storage RN2601-06.pdf Description: TRANS 2PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SM6
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2603(TE85L,F) RN2603(TE85L,F) Toshiba Semiconductor and Storage RN2601-06.pdf Description: TRANS PREBIAS 2PNP 50V 100MA SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 4985 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.69 EUR
50+0.43 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 31 Stücke
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RN2604(TE85L,F) RN2604(TE85L,F) Toshiba Semiconductor and Storage RN2601-06.pdf Description: TRANS 2PNP PREBIAS 0.3W SM6
auf Bestellung 3000 Stücke:
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RN2605(TE85L,F) RN2605(TE85L,F) Toshiba Semiconductor and Storage RN2601-06.pdf Description: TRANS PREBIAS 2PNP 50V 100MA SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 8987 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.74 EUR
47+0.45 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 29 Stücke
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RN2606(TE85L,F) RN2606(TE85L,F) Toshiba Semiconductor and Storage RN2601-06.pdf Description: TRANS 2PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 670 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.74 EUR
46+0.45 EUR
100+0.29 EUR
500+0.21 EUR
Mindestbestellmenge: 29 Stücke
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RN2607(TE85L,F) RN2607(TE85L,F) Toshiba Semiconductor and Storage RN2607_datasheet_en_20191111.pdf?did=18896&prodName=RN2607 Description: TRANS 2PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
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RN2608(TE85L,F) RN2608(TE85L,F) Toshiba Semiconductor and Storage RN2607_datasheet_en_20191111.pdf?did=18896&prodName=RN2607 Description: TRANS 2PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.71 EUR
47+0.44 EUR
100+0.29 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 30 Stücke
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RN2610(TE85L,F) RN2610(TE85L,F) Toshiba Semiconductor and Storage RN2610_datasheet_en_20191111.pdf?did=18898&prodName=RN2610 Description: TRANS 2PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SM6
auf Bestellung 2835 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 30 Stücke
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RN2901(T5L,F,T) RN2901(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=18907&prodName=RN2906 Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2902(T5L,F,T) RN2902(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=18907&prodName=RN2906 Description: TRANS 2PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
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RN2904(T5L,F,T) RN2904(T5L,F,T) Toshiba Semiconductor and Storage Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2906(T5L,F,T) RN2906(T5L,F,T) Toshiba Semiconductor and Storage Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2907(T5L,F,T) RN2907(T5L,F,T) Toshiba Semiconductor and Storage Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2908(T5L,F,T) RN2908(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2907 Description: TRANS 2PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
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RN2909(T5L,F,T) RN2909(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2907 Description: TRANS 2PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2910(T5L,F,T) RN2910(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2910 Description: TRANS 2PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2911(T5L,F,T) RN2911(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2910 Description: TRANS 2PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2961(TE85L,F) RN2961(TE85L,F) Toshiba Semiconductor and Storage RN2961_datasheet_en_20191118.pdf?did=18914&prodName=RN2961 Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 2383 Stücke:
Lieferzeit 10-14 Tag (e)
21+1 EUR
29+0.75 EUR
100+0.43 EUR
500+0.29 EUR
1000+0.21 EUR
Mindestbestellmenge: 21 Stücke
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RN2962(TE85L,F) RN2962(TE85L,F) Toshiba Semiconductor and Storage RN2961_datasheet_en_20191118.pdf?did=18914&prodName=RN2961 Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 2760 Stücke:
Lieferzeit 10-14 Tag (e)
21+1 EUR
29+0.75 EUR
100+0.43 EUR
500+0.29 EUR
1000+0.21 EUR
Mindestbestellmenge: 21 Stücke
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RN2963(TE85L,F) RN2963(TE85L,F) Toshiba Semiconductor and Storage RN2961_datasheet_en_20191118.pdf?did=18914&prodName=RN2961 Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 2889 Stücke:
Lieferzeit 10-14 Tag (e)
21+1 EUR
29+0.75 EUR
100+0.43 EUR
500+0.29 EUR
1000+0.21 EUR
Mindestbestellmenge: 21 Stücke
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RN2964(TE85L,F) RN2964(TE85L,F) Toshiba Semiconductor and Storage RN2961_datasheet_en_20191118.pdf?did=18914&prodName=RN2961 Description: TRANS 2PNP PREBIAS 0.1W US6
auf Bestellung 2855 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.94 EUR
30+0.7 EUR
100+0.39 EUR
500+0.26 EUR
1000+0.2 EUR
Mindestbestellmenge: 23 Stücke
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RN2965(TE85L,F) RN2965(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2961 Description: TRANS 2PNP PREBIAS 0.2W US6
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
21+1.02 EUR
28+0.76 EUR
100+0.43 EUR
500+0.29 EUR
1000+0.23 EUR
Mindestbestellmenge: 21 Stücke
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RN2967(TE85L,F) RN2967(TE85L,F) Toshiba Semiconductor and Storage RN296(7-9)FE.pdf Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.99 EUR
29+0.73 EUR
100+0.4 EUR
500+0.27 EUR
1000+0.21 EUR
Mindestbestellmenge: 22 Stücke
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RN2969(TE85L,F) RN2969(TE85L,F) Toshiba Semiconductor and Storage RN296(7-9)FE.pdf Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.99 EUR
29+0.73 EUR
100+0.42 EUR
500+0.27 EUR
1000+0.21 EUR
Mindestbestellmenge: 22 Stücke
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RN2971(TE85L,F) RN2971(TE85L,F) Toshiba Semiconductor and Storage RN2970%2C71.pdf Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.52 EUR
60+0.36 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4901FE(TE85L,F) RN4901FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4901FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4903FE(TE85L,F) RN4903FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4903FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4904FE(T5L,F,T) RN4904FE(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4904FE Description: TRAN DUAL PNP/NPN 50V 100MA ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4907FE(T5L,F,T) RN4907FE(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4907FE Description: TRAN DUAL PNP/NPN 50V 100MA ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4908FE(TE85L,F) RN4908FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4908FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4909FE(TE85L,F) RN4909FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4909FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4910FE(TE85L,F) RN4910FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4910FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4911FE(TE85L,F) RN4911FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4911FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4601(TE85L,F) RN4601(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18920&prodName=RN4601 Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 548 Stücke:
Lieferzeit 10-14 Tag (e)
21+1 EUR
29+0.75 EUR
100+0.43 EUR
500+0.29 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4604(TE85L,F) RN4604(TE85L,F) Toshiba Semiconductor and Storage RN4604_datasheet_en_20191101.pdf?did=18928&prodName=RN4604 Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 1798 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 30 Stücke
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RN4607(TE85L,F) RN4607(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18934&prodName=RN4607 Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 795 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.99 EUR
29+0.73 EUR
100+0.4 EUR
500+0.27 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4608(TE85L,F) RN4608(TE85L,F) Toshiba Semiconductor and Storage RN4608_datasheet_en_20191101.pdf?did=18937&prodName=RN4608 Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 2639 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4609(TE85L,F) RN4609(TE85L,F) Toshiba Semiconductor and Storage RN4609_datasheet_en_20191101.pdf?did=18939&prodName=RN4609 Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 1303 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4610(TE85L,F) RN4610(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4610 Description: TRANS NPN/PNP PREBIAS 0.3W SM6
auf Bestellung 2790 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN4611(TE85L,F) RN4611(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4611 Description: TRANS NPN/PNP PREBIAS 0.3W SM6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN4612(TE85L,F) RN4612(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4612 Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4901(T5L,F,T) RN4901(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4901 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4903(T5L,F,T) RN4903(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=18952&prodName=RN4903 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4904(T5L,F,T) RN4904(T5L,F,T) Toshiba Semiconductor and Storage Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4907(T5L,F,T) RN4907(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4907 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4908(T5L,F,T) RN4908(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4908 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4909(T5L,F,T) RN4909(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4909 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4910(T5L,F,T) RN4910(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4910 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4911(T5L,F,T) RN4911(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4911 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN49A1(T5L,F,T) RN49A1(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN49A1 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HN1C03FU-A(TE85L,F HN1C03FU-A(TE85L,F Toshiba Semiconductor and Storage docget.jsp?did=19156&prodName=HN1C03FU Description: TRANS 2NPN 20V 0.3A US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2963FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2961FE
RN2963FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2964FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2961FE
RN2964FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2965FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2961FE
RN2965FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2966FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2961FE
RN2966FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2967FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2967FE
RN2967FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2968FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2967FE
RN2968FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2969FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2967FE
RN2969FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2970FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2970FE
RN2970FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2601(TE85L,F) RN2601-06.pdf
RN2601(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 253 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
46+0.46 EUR
100+0.29 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2602(TE85L,F) RN2601-06.pdf
RN2602(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SM6
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2603(TE85L,F) RN2601-06.pdf
RN2603(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 4985 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
50+0.43 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 31 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2604(TE85L,F) RN2601-06.pdf
RN2604(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SM6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN2605(TE85L,F) RN2601-06.pdf
RN2605(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 8987 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
47+0.45 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2606(TE85L,F) RN2601-06.pdf
RN2606(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 670 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
46+0.45 EUR
100+0.29 EUR
500+0.21 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2607(TE85L,F) RN2607_datasheet_en_20191111.pdf?did=18896&prodName=RN2607
RN2607(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN2608(TE85L,F) RN2607_datasheet_en_20191111.pdf?did=18896&prodName=RN2607
RN2608(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
47+0.44 EUR
100+0.29 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 30 Stücke
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RN2610(TE85L,F) RN2610_datasheet_en_20191111.pdf?did=18898&prodName=RN2610
RN2610(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SM6
auf Bestellung 2835 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 30 Stücke
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RN2901(T5L,F,T) docget.jsp?did=18907&prodName=RN2906
RN2901(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2902(T5L,F,T) docget.jsp?did=18907&prodName=RN2906
RN2902(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2904(T5L,F,T)
RN2904(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2906(T5L,F,T)
RN2906(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2907(T5L,F,T)
RN2907(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2908(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2907
RN2908(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2909(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2907
RN2909(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2910(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2910
RN2910(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2911(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2910
RN2911(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2961(TE85L,F) RN2961_datasheet_en_20191118.pdf?did=18914&prodName=RN2961
RN2961(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 2383 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
29+0.75 EUR
100+0.43 EUR
500+0.29 EUR
1000+0.21 EUR
Mindestbestellmenge: 21 Stücke
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RN2962(TE85L,F) RN2961_datasheet_en_20191118.pdf?did=18914&prodName=RN2961
RN2962(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 2760 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
29+0.75 EUR
100+0.43 EUR
500+0.29 EUR
1000+0.21 EUR
Mindestbestellmenge: 21 Stücke
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RN2963(TE85L,F) RN2961_datasheet_en_20191118.pdf?did=18914&prodName=RN2961
RN2963(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 2889 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
29+0.75 EUR
100+0.43 EUR
500+0.29 EUR
1000+0.21 EUR
Mindestbestellmenge: 21 Stücke
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RN2964(TE85L,F) RN2961_datasheet_en_20191118.pdf?did=18914&prodName=RN2961
RN2964(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W US6
auf Bestellung 2855 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
30+0.7 EUR
100+0.39 EUR
500+0.26 EUR
1000+0.2 EUR
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RN2965(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2961
RN2965(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1.02 EUR
28+0.76 EUR
100+0.43 EUR
500+0.29 EUR
1000+0.23 EUR
Mindestbestellmenge: 21 Stücke
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RN2967(TE85L,F) RN296(7-9)FE.pdf
RN2967(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
29+0.73 EUR
100+0.4 EUR
500+0.27 EUR
1000+0.21 EUR
Mindestbestellmenge: 22 Stücke
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RN2969(TE85L,F) RN296(7-9)FE.pdf
RN2969(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
29+0.73 EUR
100+0.42 EUR
500+0.27 EUR
1000+0.21 EUR
Mindestbestellmenge: 22 Stücke
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RN2971(TE85L,F) RN2970%2C71.pdf
RN2971(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
60+0.36 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 40 Stücke
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RN4901FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4901FE
RN4901FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4903FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4903FE
RN4903FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4904FE(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4904FE
RN4904FE(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL PNP/NPN 50V 100MA ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4907FE(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4907FE
RN4907FE(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL PNP/NPN 50V 100MA ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4908FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4908FE
RN4908FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4909FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4909FE
RN4909FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4910FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4910FE
RN4910FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4911FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4911FE
RN4911FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4601(TE85L,F) docget.jsp?did=18920&prodName=RN4601
RN4601(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 548 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
29+0.75 EUR
100+0.43 EUR
500+0.29 EUR
Mindestbestellmenge: 21 Stücke
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RN4604(TE85L,F) RN4604_datasheet_en_20191101.pdf?did=18928&prodName=RN4604
RN4604(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 1798 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4607(TE85L,F) docget.jsp?did=18934&prodName=RN4607
RN4607(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 795 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
29+0.73 EUR
100+0.4 EUR
500+0.27 EUR
Mindestbestellmenge: 22 Stücke
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RN4608(TE85L,F) RN4608_datasheet_en_20191101.pdf?did=18937&prodName=RN4608
RN4608(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 2639 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 30 Stücke
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RN4609(TE85L,F) RN4609_datasheet_en_20191101.pdf?did=18939&prodName=RN4609
RN4609(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 1303 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 30 Stücke
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RN4610(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4610
RN4610(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
auf Bestellung 2790 Stücke:
Lieferzeit 10-14 Tag (e)
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RN4611(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4611
RN4611(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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RN4612(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4612
RN4612(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Produkt ist nicht verfügbar
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RN4901(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4901
RN4901(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
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RN4903(T5L,F,T) docget.jsp?did=18952&prodName=RN4903
RN4903(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
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RN4904(T5L,F,T)
RN4904(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
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RN4907(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4907
RN4907(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
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RN4908(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4908
RN4908(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
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RN4909(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4909
RN4909(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
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RN4910(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4910
RN4910(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
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RN4911(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4911
RN4911(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
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RN49A1(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN49A1
RN49A1(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
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HN1C03FU-A(TE85L,F docget.jsp?did=19156&prodName=HN1C03FU
HN1C03FU-A(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 20V 0.3A US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH