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RN1510(TE85L,F) RN1510(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1510 Description: TRANS 2NPN PREBIAS 0.3W SMV
auf Bestellung 2965 Stücke:
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RN1907,LF(CT RN1907,LF(CT Toshiba Semiconductor and Storage Description: TRANS 2NPN PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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HN2A01FU-Y(TE85L,F HN2A01FU-Y(TE85L,F Toshiba Semiconductor and Storage docget.jsp?did=19159&prodName=HN2A01FU Description: TRANS 2PNP 50V 0.15A US6
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
auf Bestellung 2298 Stücke:
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23+0.92 EUR
34+0.63 EUR
100+0.32 EUR
500+0.26 EUR
1000+0.19 EUR
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MT3S16U(TE85L,F) MT3S16U(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=MT3S16U Description: TRANS RF NPN 5V 1GHZ USM
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2SC5086-Y,LF 2SC5086-Y,LF Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SSM
Part Status: Obsolete
Produkt ist nicht verfügbar
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TC75S101FE,LM(T TC75S101FE,LM(T Toshiba Semiconductor and Storage docget.jsp?did=11316&prodName=TC75S101F Description: IC OPAMP GP 1 CIRCUIT ESV
Produkt ist nicht verfügbar
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TC74LCX273FT-ELK TC74LCX273FT-ELK Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC74LCX273FT Description: IC D-TYPE POS TRG SNGL 20TSSOP
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HN1D01FE(TE85L,F) HN1D01FE(TE85L,F) Toshiba Semiconductor and Storage HN1D01FE_datasheet_en_20140301.pdf?did=22427&prodName=HN1D01FE Description: DIODE ARRAY GP 80V 100MA ES6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ES6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 1.6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 1180 Stücke:
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24+0.88 EUR
34+0.62 EUR
100+0.31 EUR
500+0.25 EUR
1000+0.19 EUR
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HN1D02FE,LF HN1D02FE,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN1D02FE Description: DIODE ARRAY GP 80V 100MA ES6
Produkt ist nicht verfügbar
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RN1504(TE85L,F) RN1504(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1504 Description: TRANS 2NPN PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
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RN1702JE(TE85L,F) RN1702JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19121&prodName=RN1701JE Description: TRANS 2NPN PREBIAS 0.1W ESV
auf Bestellung 1214 Stücke:
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23+0.92 EUR
31+0.68 EUR
100+0.38 EUR
500+0.25 EUR
1000+0.19 EUR
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RN1111,LF(CT RN1111,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18754&prodName=RN1110 Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 2089 Stücke:
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HN1A01F-Y(TE85L,F) HN1A01F-Y(TE85L,F) Toshiba Semiconductor and Storage HN1A01F_datasheet_en_20210625.pdf?did=19140&prodName=HN1A01F Description: TRANS 2PNP 50V 0.15A SM6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SM6
Produkt ist nicht verfügbar
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2SA1162-O,LF 2SA1162-O,LF Toshiba Semiconductor and Storage docget.jsp?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 2816 Stücke:
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67+0.31 EUR
114+0.18 EUR
186+0.11 EUR
500+0.082 EUR
1000+0.073 EUR
Mindestbestellmenge: 67 Stücke
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2SC5087R(TE85L,F) 2SC5087R(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 8GHZ SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz
Supplier Device Package: SMQ
Part Status: Active
Produkt ist nicht verfügbar
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RN1505(TE85L,F) RN1505(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18803&prodName=RN1505 Description: TRANS 2NPN PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
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RN2903(T5L,F,T) RN2903(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2903 Description: TRAN DUAL PNP US6 -50V -100A
auf Bestellung 3000 Stücke:
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TC75S59FE(TE85L,F) TC75S59FE(TE85L,F) Toshiba Semiconductor and Storage Description: IC COMPARATOR 1 GEN PUR ESV
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 200ns
Supplier Device Package: ESV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA
Produkt ist nicht verfügbar
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RN1506(TE85L,F) RN1506(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18803&prodName=RN1506 Description: TRANS 2NPN PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
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RN1603(TE85L,F) RN1603(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1601 Description: TRANS 2NPN PREBIAS 0.3W SM6
Produkt ist nicht verfügbar
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RN1606(TE85L,F) RN1606(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18809&prodName=RN1601 Description: TRANS 2NPN PREBIAS 0.3W SM6
auf Bestellung 390 Stücke:
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22+0.96 EUR
30+0.7 EUR
100+0.4 EUR
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RN1409(TE85L,F) RN1409(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1409 Description: TRAN NPN S-MINI 50V 100A
auf Bestellung 2990 Stücke:
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RN1414,LF(B RN1414,LF(B Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1414 Description: TRANS PREBIAS NPN 0.2W S-MINI
auf Bestellung 5195 Stücke:
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TC75S57F,LF TC75S57F,LF Toshiba Semiconductor and Storage TC75S57F_datasheet_en_20190911.pdf?did=20998&prodName=TC75S57F Description: IC COMPARATOR 1 GEN PUR SMV
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 140ns
Supplier Device Package: SMV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 1003 Stücke:
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22+0.99 EUR
27+0.79 EUR
29+0.73 EUR
100+0.54 EUR
250+0.49 EUR
500+0.4 EUR
1000+0.3 EUR
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HN1D03FU,LF HN1D03FU,LF Toshiba Semiconductor and Storage docget.jsp?did=3661&prodName=HN1D03FU Description: DIODE ARRAY GP 80V 80MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 80mA
Diode Configuration: 2 Pair CA + CC
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 293 Stücke:
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30+0.71 EUR
48+0.44 EUR
66+0.32 EUR
100+0.27 EUR
Mindestbestellmenge: 30 Stücke
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RN2706JE(TE85L,F) RN2706JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19089&prodName=RN2705JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Produkt ist nicht verfügbar
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RN1901,LF(CT RN1901,LF(CT Toshiba Semiconductor and Storage RN190x.pdf Description: TRANS PREBIAS 2NPN 50V 100MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: US6
auf Bestellung 3291 Stücke:
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50+0.42 EUR
85+0.25 EUR
136+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
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RN4902FE(TE85L,F) RN4902FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4902FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN2702JE(TE85L,F) RN2702JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2701JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Produkt ist nicht verfügbar
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RN4905FE,LF(CB RN4905FE,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4905FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 3880 Stücke:
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HN1C03F-B(TE85L,F) HN1C03F-B(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19154&prodName=HN1C03F Description: TRANS 2NPN 20V 0.3A SM6
auf Bestellung 2723 Stücke:
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2SA1586-GR,LF 2SA1586-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19170&prodName=2SA1586 Description: TRANS PNP 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 4393 Stücke:
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67+0.31 EUR
114+0.18 EUR
186+0.11 EUR
500+0.082 EUR
1000+0.073 EUR
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2SC5087-O(TE85L,F) 2SC5087-O(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=17662&prodName=2SC5087 Description: RF TRANS NPN 12V 7GHZ SMQ
Produkt ist nicht verfügbar
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TC75S56F,LF TC75S56F,LF Toshiba Semiconductor and Storage TC75S56F_datasheet_en_20190911.pdf?did=20995&prodName=TC75S56F Description: IC COMPARATOR 1 GEN PUR SMV
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 22µA
Propagation Delay (Max): 680ns
Supplier Device Package: SMV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
auf Bestellung 13522 Stücke:
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22+0.96 EUR
28+0.77 EUR
30+0.7 EUR
100+0.52 EUR
250+0.48 EUR
500+0.39 EUR
1000+0.3 EUR
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1SV307(TPH3,F) 1SV307(TPH3,F) Toshiba Semiconductor and Storage 1SV307_datasheet_en_20140301.pdf?did=2834&prodName=1SV307 Description: RF DIODE PIN 30V USC
Current - Max: 50 mA
Supplier Device Package: USC
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
auf Bestellung 8031 Stücke:
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30+0.71 EUR
45+0.48 EUR
100+0.27 EUR
500+0.24 EUR
1000+0.21 EUR
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RN2501(TE85L,F) RN2501(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2501 Description: TRANS 2PNP PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
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RN2905FE,LF(CB RN2905FE,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2901FE Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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HN2C01FU-GR(T5L,F) HN2C01FU-GR(T5L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN2C01FU Description: TRANS 2NPN 50V 0.15A US6
auf Bestellung 9000 Stücke:
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RN4906FE,LF(CB RN4906FE,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4906FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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2SC2714-O(TE85L,F) 2SC2714-O(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 30V 550MHZ S MINI
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: S-Mini
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Frequency - Transition: 550MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 20mA
Power - Max: 100mW
Gain: 23dB
Produkt ist nicht verfügbar
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RN1501(TE85L,F) RN1501(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18803&prodName=RN1501 Description: TRANS 2NPN PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
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2SC4207-BL(TE85L,F 2SC4207-BL(TE85L,F Toshiba Semiconductor and Storage docget.jsp?did=19298&prodName=2SC4207 Description: TRANS 2NPN 50V 0.15A SMV
Supplier Device Package: SMV
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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2SC5108-Y,LF 2SC5108-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=17697&prodName=2SC5108 Description: RF TRANS NPN 10V 6GHZ SSM
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RN1607(TE85L,F) RN1607(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18811&prodName=RN1607 Description: TRANS 2NPN PREBIAS 0.3W SM6
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
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49+0.43 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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2SA1162-Y,LF 2SA1162-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 18972 Stücke:
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67+0.31 EUR
114+0.18 EUR
186+0.11 EUR
500+0.082 EUR
1000+0.073 EUR
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RN1502(TE85L,F) RN1502(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18803&prodName=RN1503 Description: TRANS 2NPN PREBIAS 0.3W SMV
Supplier Device Package: SMV
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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RN4605(TE85L,F) RN4605(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4605 Description: TRANS NPN/PNP PREBIAS 0.3W SM6
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TC7SET17FU,LF TC7SET17FU,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SET17F Description: IC GATE SMV L-MOS USV
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RN2102,LF(CT RN2102,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2101 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.36 EUR
97+0.21 EUR
156+0.13 EUR
500+0.098 EUR
1000+0.086 EUR
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TC75W57FU,LF TC75W57FU,LF Toshiba Semiconductor and Storage TC75W57FU_datasheet_en_20140301.pdf?did=21015&prodName=TC75W57FU Description: IC COMPARATOR 2 GEN PUR 8SSOP
Supplier Device Package: 8-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 400µA
Propagation Delay (Max): 140ns
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1465 Stücke:
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11+2.05 EUR
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25+1.04 EUR
100+0.8 EUR
250+0.68 EUR
500+0.61 EUR
1000+0.54 EUR
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RN1706JE(TE85L,F) RN1706JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19121&prodName=RN1701JE Description: TRANS 2NPN PREBIAS 0.1W ESV
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Produkt ist nicht verfügbar
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HN2D01FU(TE85L,F) HN2D01FU(TE85L,F) Toshiba Semiconductor and Storage Description: DIODE ARRAY GP 80V 80MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 80mA
Diode Configuration: 3 Independent
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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2SA1586-Y,LF 2SA1586-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19170&prodName=2SA1586 Description: TRANS PNP 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 6801 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.31 EUR
114+0.18 EUR
186+0.11 EUR
500+0.082 EUR
1000+0.073 EUR
Mindestbestellmenge: 67 Stücke
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HN1B01F-GR(TE85L,F HN1B01F-GR(TE85L,F Toshiba Semiconductor and Storage docget.jsp?did=19144&prodName=HN1B01F Description: TRANS NPN/PNP 50V 0.15A SM6
Produkt ist nicht verfügbar
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TC75S57FU(TE85L,F) TC75S57FU(TE85L,F) Toshiba Semiconductor and Storage TC75S57F_datasheet_en_20190911.pdf?did=20998&prodName=TC75S57F Description: IC COMPARATOR 1 GEN PUR 5SSOP
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 140ns
Supplier Device Package: 5-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 25633 Stücke:
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27+0.8 EUR
31+0.69 EUR
33+0.64 EUR
100+0.51 EUR
250+0.48 EUR
500+0.4 EUR
1000+0.31 EUR
Mindestbestellmenge: 27 Stücke
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HN1B01F-Y(TE85L,F) HN1B01F-Y(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN1B01F Description: TRANS NPN/PNP 50V 0.15A SM6
Produkt ist nicht verfügbar
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RN2502(TE85L,F) RN2502(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18887&prodName=RN2501 Description: TRANS 2PNP PREBIAS 0.3W SMV
Part Status: Active
Supplier Device Package: SMV
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 2770 Stücke:
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22+0.99 EUR
29+0.73 EUR
100+0.4 EUR
500+0.27 EUR
1000+0.21 EUR
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TC75S54FU(TE85L,F) TC75S54FU(TE85L,F) Toshiba Semiconductor and Storage TC75S54F_datasheet_en_20190911.pdf?did=21006&prodName=TC75S54F Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 700 µA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Slew Rate: 0.7V/µs
Current - Supply: 100µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
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21+1.02 EUR
26+0.83 EUR
28+0.76 EUR
100+0.56 EUR
250+0.51 EUR
500+0.43 EUR
1000+0.32 EUR
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TC7SH126FU(T5L,F,T TC7SH126FU(T5L,F,T Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SH126FU Description: IC GATE L-MOS USV
auf Bestellung 3000 Stücke:
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HN1C03FU-B(TE85L,F HN1C03FU-B(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN1C03FU Description: TRANS 2NPN 20V 0.3A US6
Produkt ist nicht verfügbar
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RN1510(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1510
RN1510(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
auf Bestellung 2965 Stücke:
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RN1907,LF(CT
RN1907,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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HN2A01FU-Y(TE85L,F docget.jsp?did=19159&prodName=HN2A01FU
HN2A01FU-Y(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A US6
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
auf Bestellung 2298 Stücke:
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AnzahlPrivatkunde
23+0.92 EUR
34+0.63 EUR
100+0.32 EUR
500+0.26 EUR
1000+0.19 EUR
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MT3S16U(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=MT3S16U
MT3S16U(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS RF NPN 5V 1GHZ USM
auf Bestellung 8876 Stücke:
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2SC5086-Y,LF
2SC5086-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SSM
Part Status: Obsolete
Produkt ist nicht verfügbar
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TC75S101FE,LM(T docget.jsp?did=11316&prodName=TC75S101F
TC75S101FE,LM(T
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT ESV
Produkt ist nicht verfügbar
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TC74LCX273FT-ELK docget.jsp?type=datasheet&lang=en&pid=TC74LCX273FT
TC74LCX273FT-ELK
Hersteller: Toshiba Semiconductor and Storage
Description: IC D-TYPE POS TRG SNGL 20TSSOP
Produkt ist nicht verfügbar
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HN1D01FE(TE85L,F) HN1D01FE_datasheet_en_20140301.pdf?did=22427&prodName=HN1D01FE
HN1D01FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA ES6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ES6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 1.6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 1180 Stücke:
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AnzahlPrivatkunde
24+0.88 EUR
34+0.62 EUR
100+0.31 EUR
500+0.25 EUR
1000+0.19 EUR
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HN1D02FE,LF docget.jsp?type=datasheet&lang=en&pid=HN1D02FE
HN1D02FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA ES6
Produkt ist nicht verfügbar
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RN1504(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1504
RN1504(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
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RN1702JE(TE85L,F) docget.jsp?did=19121&prodName=RN1701JE
RN1702JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
auf Bestellung 1214 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
31+0.68 EUR
100+0.38 EUR
500+0.25 EUR
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RN1111,LF(CT docget.jsp?did=18754&prodName=RN1110
RN1111,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 2089 Stücke:
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HN1A01F-Y(TE85L,F) HN1A01F_datasheet_en_20210625.pdf?did=19140&prodName=HN1A01F
HN1A01F-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A SM6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SM6
Produkt ist nicht verfügbar
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2SA1162-O,LF docget.jsp?did=19351&prodName=2SA1162
2SA1162-O,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 2816 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
114+0.18 EUR
186+0.11 EUR
500+0.082 EUR
1000+0.073 EUR
Mindestbestellmenge: 67 Stücke
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2SC5087R(TE85L,F)
2SC5087R(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 8GHZ SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz
Supplier Device Package: SMQ
Part Status: Active
Produkt ist nicht verfügbar
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RN1505(TE85L,F) docget.jsp?did=18803&prodName=RN1505
RN1505(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
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RN2903(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2903
RN2903(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL PNP US6 -50V -100A
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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TC75S59FE(TE85L,F)
TC75S59FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR ESV
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 200ns
Supplier Device Package: ESV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA
Produkt ist nicht verfügbar
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RN1506(TE85L,F) docget.jsp?did=18803&prodName=RN1506
RN1506(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
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RN1603(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1601
RN1603(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Produkt ist nicht verfügbar
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RN1606(TE85L,F) docget.jsp?did=18809&prodName=RN1601
RN1606(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
30+0.7 EUR
100+0.4 EUR
Mindestbestellmenge: 22 Stücke
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RN1409(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1409
RN1409(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN NPN S-MINI 50V 100A
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1414,LF(B docget.jsp?type=datasheet&lang=en&pid=RN1414
RN1414,LF(B
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
auf Bestellung 5195 Stücke:
Lieferzeit 10-14 Tag (e)
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TC75S57F,LF TC75S57F_datasheet_en_20190911.pdf?did=20998&prodName=TC75S57F
TC75S57F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR SMV
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 140ns
Supplier Device Package: SMV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 1003 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
27+0.79 EUR
29+0.73 EUR
100+0.54 EUR
250+0.49 EUR
500+0.4 EUR
1000+0.3 EUR
Mindestbestellmenge: 22 Stücke
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HN1D03FU,LF docget.jsp?did=3661&prodName=HN1D03FU
HN1D03FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 80mA
Diode Configuration: 2 Pair CA + CC
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 293 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
48+0.44 EUR
66+0.32 EUR
100+0.27 EUR
Mindestbestellmenge: 30 Stücke
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RN2706JE(TE85L,F) docget.jsp?did=19089&prodName=RN2705JE
RN2706JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1901,LF(CT RN190x.pdf
RN1901,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: US6
auf Bestellung 3291 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
85+0.25 EUR
136+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 50 Stücke
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RN4902FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4902FE
RN4902FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2702JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2701JE
RN2702JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4905FE,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN4905FE
RN4905FE,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 3880 Stücke:
Lieferzeit 10-14 Tag (e)
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HN1C03F-B(TE85L,F) docget.jsp?did=19154&prodName=HN1C03F
HN1C03F-B(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 20V 0.3A SM6
auf Bestellung 2723 Stücke:
Lieferzeit 10-14 Tag (e)
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2SA1586-GR,LF docget.jsp?did=19170&prodName=2SA1586
2SA1586-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 4393 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
114+0.18 EUR
186+0.11 EUR
500+0.082 EUR
1000+0.073 EUR
Mindestbestellmenge: 67 Stücke
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2SC5087-O(TE85L,F) docget.jsp?did=17662&prodName=2SC5087
2SC5087-O(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SMQ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC75S56F,LF TC75S56F_datasheet_en_20190911.pdf?did=20995&prodName=TC75S56F
TC75S56F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR SMV
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 22µA
Propagation Delay (Max): 680ns
Supplier Device Package: SMV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
auf Bestellung 13522 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
28+0.77 EUR
30+0.7 EUR
100+0.52 EUR
250+0.48 EUR
500+0.39 EUR
1000+0.3 EUR
Mindestbestellmenge: 22 Stücke
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1SV307(TPH3,F) 1SV307_datasheet_en_20140301.pdf?did=2834&prodName=1SV307
1SV307(TPH3,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V USC
Current - Max: 50 mA
Supplier Device Package: USC
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
auf Bestellung 8031 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
45+0.48 EUR
100+0.27 EUR
500+0.24 EUR
1000+0.21 EUR
Mindestbestellmenge: 30 Stücke
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RN2501(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2501
RN2501(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2905FE,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN2901FE
RN2905FE,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HN2C01FU-GR(T5L,F) docget.jsp?type=datasheet&lang=en&pid=HN2C01FU
HN2C01FU-GR(T5L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A US6
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
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RN4906FE,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN4906FE
RN4906FE,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2714-O(TE85L,F)
2SC2714-O(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ S MINI
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: S-Mini
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Frequency - Transition: 550MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 20mA
Power - Max: 100mW
Gain: 23dB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1501(TE85L,F) docget.jsp?did=18803&prodName=RN1501
RN1501(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC4207-BL(TE85L,F docget.jsp?did=19298&prodName=2SC4207
2SC4207-BL(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A SMV
Supplier Device Package: SMV
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC5108-Y,LF docget.jsp?did=17697&prodName=2SC5108
2SC5108-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 6GHZ SSM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1607(TE85L,F) docget.jsp?did=18811&prodName=RN1607
RN1607(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
49+0.43 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 30 Stücke
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2SA1162-Y,LF docget.jsp?did=19351&prodName=2SA1162
2SA1162-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 18972 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
114+0.18 EUR
186+0.11 EUR
500+0.082 EUR
1000+0.073 EUR
Mindestbestellmenge: 67 Stücke
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RN1502(TE85L,F) docget.jsp?did=18803&prodName=RN1503
RN1502(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Supplier Device Package: SMV
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 51559 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 29 Stücke
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RN4605(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4605
RN4605(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
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TC7SET17FU,LF docget.jsp?type=datasheet&lang=en&pid=TC7SET17F
TC7SET17FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE SMV L-MOS USV
auf Bestellung 1193 Stücke:
Lieferzeit 10-14 Tag (e)
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RN2102,LF(CT docget.jsp?did=18841&prodName=RN2101
RN2102,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
59+0.36 EUR
97+0.21 EUR
156+0.13 EUR
500+0.098 EUR
1000+0.086 EUR
Mindestbestellmenge: 59 Stücke
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TC75W57FU,LF TC75W57FU_datasheet_en_20140301.pdf?did=21015&prodName=TC75W57FU
TC75W57FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 2 GEN PUR 8SSOP
Supplier Device Package: 8-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 400µA
Propagation Delay (Max): 140ns
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1465 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.05 EUR
17+1.25 EUR
25+1.04 EUR
100+0.8 EUR
250+0.68 EUR
500+0.61 EUR
1000+0.54 EUR
Mindestbestellmenge: 11 Stücke
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RN1706JE(TE85L,F) docget.jsp?did=19121&prodName=RN1701JE
RN1706JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HN2D01FU(TE85L,F)
HN2D01FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 80mA
Diode Configuration: 3 Independent
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA1586-Y,LF docget.jsp?did=19170&prodName=2SA1586
2SA1586-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 6801 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
114+0.18 EUR
186+0.11 EUR
500+0.082 EUR
1000+0.073 EUR
Mindestbestellmenge: 67 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1B01F-GR(TE85L,F docget.jsp?did=19144&prodName=HN1B01F
HN1B01F-GR(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A SM6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC75S57FU(TE85L,F) TC75S57F_datasheet_en_20190911.pdf?did=20998&prodName=TC75S57F
TC75S57FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR 5SSOP
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 140ns
Supplier Device Package: 5-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 25633 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
31+0.69 EUR
33+0.64 EUR
100+0.51 EUR
250+0.48 EUR
500+0.4 EUR
1000+0.31 EUR
Mindestbestellmenge: 27 Stücke
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HN1B01F-Y(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=HN1B01F
HN1B01F-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A SM6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2502(TE85L,F) docget.jsp?did=18887&prodName=RN2501
RN2502(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Part Status: Active
Supplier Device Package: SMV
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 2770 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
29+0.73 EUR
100+0.4 EUR
500+0.27 EUR
1000+0.21 EUR
Mindestbestellmenge: 22 Stücke
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TC75S54FU(TE85L,F) TC75S54F_datasheet_en_20190911.pdf?did=21006&prodName=TC75S54F
TC75S54FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 700 µA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Slew Rate: 0.7V/µs
Current - Supply: 100µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1.02 EUR
26+0.83 EUR
28+0.76 EUR
100+0.56 EUR
250+0.51 EUR
500+0.43 EUR
1000+0.32 EUR
Mindestbestellmenge: 21 Stücke
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TC7SH126FU(T5L,F,T docget.jsp?type=datasheet&lang=en&pid=TC7SH126FU
TC7SH126FU(T5L,F,T
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE L-MOS USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
HN1C03FU-B(TE85L,F docget.jsp?type=datasheet&lang=en&pid=HN1C03FU
HN1C03FU-B(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 20V 0.3A US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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