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1SS300,LF 1SS300,LF Toshiba Semiconductor and Storage 1SS300_datasheet_en_20210625.pdf?did=3292&prodName=1SS300 Description: DIODE ARRAY GP 80V 100MA USM
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: USM
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
auf Bestellung 2857 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.33 EUR
102+0.2 EUR
164+0.13 EUR
500+0.093 EUR
1000+0.082 EUR
Mindestbestellmenge: 63 Stücke
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HN1D01F(TE85L,F) HN1D01F(TE85L,F) Toshiba Semiconductor and Storage HN1D01F_datasheet_en_20210625.pdf?did=3439&prodName=HN1D01F Description: DIODE ARRAY GP 80V 100MA SM6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SM6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
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27+0.8 EUR
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1SS301,LF 1SS301,LF Toshiba Semiconductor and Storage docget.jsp?did=3294&prodName=1SS301 Description: DIODE ARRAY GP 80V 100MA SC-70
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 5820 Stücke:
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59+0.36 EUR
96+0.21 EUR
156+0.13 EUR
500+0.099 EUR
1000+0.087 EUR
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HN1D02F(TE85L,F) HN1D02F(TE85L,F) Toshiba Semiconductor and Storage HN1D02F_datasheet_en_20210625.pdf?did=3617&prodName=HN1D02F Description: DIODE ARRAY GP 80V 100MA SM6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SM6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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HN1D02FU(T5L,F,T) HN1D02FU(T5L,F,T) Toshiba Semiconductor and Storage HN1D02FU_datasheet_en_20210625.pdf?did=3455&prodName=HN1D02FU Description: DIODE ARRAY GP 80V 100MA ES6
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: ES6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
auf Bestellung 8 Stücke:
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RN1703JE(TE85L,F) RN1703JE(TE85L,F) Toshiba Semiconductor and Storage RN1701JE_datasheet_en_20140301.pdf?did=19121&prodName=RN1701JE Description: TRANS PREBIAS 2NPN 50V 100MA ESV
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 1813 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.69 EUR
50+0.43 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.18 EUR
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RN1704JE(TE85L,F) RN1704JE(TE85L,F) Toshiba Semiconductor and Storage RN1701JE_datasheet_en_20140301.pdf?did=19121&prodName=RN1701JE Description: TRANS 2NPN PREBIAS 0.1W ESV
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
auf Bestellung 7 Stücke:
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RN1705JE(TE85L,F) RN1705JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19121&prodName=RN1701JE Description: TRANS 2NPN PREBIAS 0.1W ESV
auf Bestellung 775 Stücke:
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23+0.92 EUR
31+0.68 EUR
100+0.38 EUR
500+0.25 EUR
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RN1508(TE85L,F) RN1508(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18805&prodName=RN1508 Description: TRANS 2NPN PREBIAS 0.3W SMV
Supplier Device Package: SMV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 2486 Stücke:
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29+0.74 EUR
46+0.45 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
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RN1509(TE85L,F) RN1509(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18805&prodName=RN1508 Description: TRANS 2NPN PREBIAS 0.3W SMV
auf Bestellung 2765 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.92 EUR
31+0.69 EUR
100+0.39 EUR
500+0.26 EUR
1000+0.2 EUR
Mindestbestellmenge: 23 Stücke
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RN1511(TE85L,F) RN1511(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18807&prodName=RN1510 Description: TRANS PREBIAS 2NPN 50V 100MA SMV
Supplier Device Package: SMV
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 4175 Stücke:
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30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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RN2701JE(TE85L,F) RN2701JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19089&prodName=RN2705JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 3695 Stücke:
Lieferzeit 10-14 Tag (e)
21+1 EUR
29+0.75 EUR
100+0.43 EUR
500+0.29 EUR
1000+0.21 EUR
2000+0.19 EUR
Mindestbestellmenge: 21 Stücke
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RN2703JE(TE85L,F) RN2703JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19089&prodName=RN2705JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 31420 Stücke:
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22+0.96 EUR
30+0.71 EUR
100+0.4 EUR
500+0.26 EUR
1000+0.2 EUR
2000+0.18 EUR
Mindestbestellmenge: 22 Stücke
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RN2704JE(TE85L,F) RN2704JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19089&prodName=RN2705JE Description: TRANS 2PNP PREBIAS 0.1W ESV
auf Bestellung 3996 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.94 EUR
30+0.7 EUR
100+0.39 EUR
500+0.26 EUR
1000+0.2 EUR
2000+0.18 EUR
Mindestbestellmenge: 23 Stücke
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RN2705JE(TE85L,F) RN2705JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19089&prodName=RN2705JE Description: TRANS 2PNP PREBIAS 0.1W ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
21+1 EUR
29+0.74 EUR
100+0.42 EUR
500+0.27 EUR
1000+0.21 EUR
2000+0.19 EUR
Mindestbestellmenge: 21 Stücke
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RN2707JE(TE85L,F) RN2707JE(TE85L,F) Toshiba Semiconductor and Storage RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 1645 Stücke:
Lieferzeit 10-14 Tag (e)
21+1 EUR
29+0.75 EUR
100+0.43 EUR
500+0.29 EUR
1000+0.21 EUR
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RN2708JE(TE85L,F) RN2708JE(TE85L,F) Toshiba Semiconductor and Storage RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
21+1 EUR
29+0.75 EUR
100+0.43 EUR
500+0.29 EUR
1000+0.21 EUR
2000+0.19 EUR
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RN2709JE(TE85L,F) RN2709JE(TE85L,F) Toshiba Semiconductor and Storage RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.99 EUR
29+0.73 EUR
100+0.4 EUR
500+0.27 EUR
1000+0.21 EUR
2000+0.18 EUR
Mindestbestellmenge: 22 Stücke
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RN2710JE(TE85L,F) RN2710JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19108&prodName=RN2711JE Description: TRANS 2PNP PREBIAS 0.1W ESV
auf Bestellung 3611 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.94 EUR
30+0.7 EUR
100+0.39 EUR
500+0.26 EUR
1000+0.2 EUR
2000+0.18 EUR
Mindestbestellmenge: 23 Stücke
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RN2711JE(TE85L,F) RN2711JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19108&prodName=RN2711JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 3900 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.99 EUR
29+0.73 EUR
100+0.4 EUR
500+0.27 EUR
1000+0.21 EUR
2000+0.18 EUR
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RN2712JE(TE85L,F) RN2712JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=565&prodName=RN2713JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.99 EUR
29+0.73 EUR
100+0.4 EUR
500+0.27 EUR
1000+0.21 EUR
2000+0.18 EUR
Mindestbestellmenge: 22 Stücke
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RN2713JE(TE85L,F) RN2713JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=565&prodName=RN2713JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 3980 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.99 EUR
29+0.73 EUR
100+0.4 EUR
500+0.27 EUR
1000+0.21 EUR
2000+0.18 EUR
Mindestbestellmenge: 22 Stücke
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RN2504(TE85L,F) RN2504(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18887&prodName=RN2501 Description: TRANS 2PNP PREBIAS 0.3W SMV
Part Status: Active
Supplier Device Package: SMV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 247 Stücke:
Lieferzeit 10-14 Tag (e)
21+1 EUR
29+0.75 EUR
100+0.43 EUR
Mindestbestellmenge: 21 Stücke
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RN2507(TE85L,F) RN2507(TE85L,F) Toshiba Semiconductor and Storage RN2507-09.pdf Description: TRANS 2PNP PREBIAS 0.3W SMV
auf Bestellung 1015 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.94 EUR
30+0.7 EUR
100+0.39 EUR
500+0.26 EUR
1000+0.2 EUR
Mindestbestellmenge: 23 Stücke
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RN2510(TE85L,F) RN2510(TE85L,F) Toshiba Semiconductor and Storage RN2510_datasheet_en_20191121.pdf?did=18892&prodName=RN2510 Description: TRANS PREBIAS 2PNP 50V 100MA SMV
Part Status: Active
Supplier Device Package: SMV
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 30 Stücke
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RN2511(TE85L,F) RN2511(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2510 Description: TRANS 2PNP PREBIAS 0.3W SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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RN4981FE(TE85L,F) RN4981FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4981FE Description: TRAN DUAL NPN/PNP 50V 100MA ES6
Produkt ist nicht verfügbar
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RN4982FE,LF(CT RN4982FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19043&prodName=RN4982FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 3250 Stücke:
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RN4983FE,LF(CT RN4983FE,LF(CT Toshiba Semiconductor and Storage RN4983FE_datasheet_en_20210818.pdf?did=19045&prodName=RN4983FE Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 3991 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.44 EUR
80+0.26 EUR
129+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.093 EUR
Mindestbestellmenge: 48 Stücke
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RN4984FE,LF(CB RN4984FE,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4984FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 7800 Stücke:
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RN4985FE(TE85L,F) RN4985FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4985FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN4987FE(T5L,F,T) RN4987FE(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4987FE Description: TRAN DUAL NPN/ PNP 50V 100MA ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4988FE(TE85L,F) RN4988FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4988FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4989FE(TE85L,F) RN4989FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4989FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN4990FE(T5L,F,T) RN4990FE(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4990FE Description: TRAN DUAL NPN/PNP 50V 100MA ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4991FE(TE85L,F) RN4991FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4991FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN1902FE,LF(CT RN1902FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19130&prodName=RN1902FE Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 112 Stücke:
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RN1903FE(TE85L,F) RN1903FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1902FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1904FE,LF(CT RN1904FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19130&prodName=RN1904FE Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 893 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.67 EUR
42+0.51 EUR
100+0.29 EUR
500+0.19 EUR
Mindestbestellmenge: 32 Stücke
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RN1905FE(TE85L,F) RN1905FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1905FE Description: TRAN DUAL NPN ES6 50V 100A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1906FE(T5L,F,T) RN1906FE(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1902FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1907FE,LF(CT RN1907FE,LF(CT Toshiba Semiconductor and Storage RN1909FE_datasheet_en_20210818.pdf?did=19126&prodName=RN1909FE Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 5722 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.48 EUR
73+0.29 EUR
118+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
Mindestbestellmenge: 44 Stücke
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RN1908FE(TE85L,F) RN1908FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19126&prodName=RN1909FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1909FE(TE85L,F) RN1909FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19126&prodName=RN1909FE Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 3950 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.69 EUR
40+0.52 EUR
100+0.3 EUR
500+0.2 EUR
1000+0.15 EUR
2000+0.13 EUR
Mindestbestellmenge: 31 Stücke
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RN1910FE(T5L,F,T) RN1910FE(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1911FE Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 1915 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1967FE(TE85L,F) RN1967FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1967FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1968FE(TE85L,F) RN1968FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1967FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1969FE(TE85L,F) RN1969FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1967FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1970FE(TE85L,F) RN1970FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1970FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1971FE(TE85L,F) RN1971FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1970FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1601(TE85L,F) RN1601(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18809&prodName=RN1601 Description: TRANS 2NPN PREBIAS 0.3W SM6
auf Bestellung 2602 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.94 EUR
30+0.71 EUR
100+0.4 EUR
500+0.26 EUR
1000+0.2 EUR
Mindestbestellmenge: 23 Stücke
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RN1604(TE85L,F) RN1604(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18809&prodName=RN1601 Description: TRANS 2NPN PREBIAS 0.3W SM6
auf Bestellung 1668 Stücke:
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RN1608(TE85L,F) RN1608(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18811&prodName=RN1607 Description: TRANS 2NPN PREBIAS 0.3W SM6
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
auf Bestellung 2758 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1609(TE85L,F) RN1609(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18811&prodName=RN1607 Description: TRANS 2NPN PREBIAS 0.3W SM6
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
auf Bestellung 2935 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 30 Stücke
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RN1610(TE85L,F) RN1610(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18815&prodName=RN1610 Description: TRANS 2NPN PREBIAS 0.3W SM6
Supplier Device Package: SM6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
auf Bestellung 1240 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1611(TE85L,F) RN1611(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18815&prodName=RN1610 Description: TRANS 2NPN PREBIAS 0.3W SM6
auf Bestellung 2059 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.05 EUR
27+0.77 EUR
100+0.44 EUR
500+0.29 EUR
1000+0.23 EUR
Mindestbestellmenge: 20 Stücke
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RN1673(TE85L,F) RN1673(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1673 Description: TRANS 2NPN PREBIAS 0.3W SM6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1905(T5L,F,T) RN1905(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1905 Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 2965 Stücke:
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RN1908(T5L,F,T) RN1908(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=18826&prodName=RN1908 Description: TRANS 2NPN PREBIAS 0.2W US6
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
auf Bestellung 2986 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.67 EUR
45+0.46 EUR
100+0.24 EUR
500+0.19 EUR
1000+0.14 EUR
Mindestbestellmenge: 32 Stücke
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RN1909(T5L,F,T) RN1909(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1907 Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 2960 Stücke:
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1SS300,LF 1SS300_datasheet_en_20210625.pdf?did=3292&prodName=1SS300
1SS300,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA USM
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: USM
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
auf Bestellung 2857 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
102+0.2 EUR
164+0.13 EUR
500+0.093 EUR
1000+0.082 EUR
Mindestbestellmenge: 63 Stücke
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HN1D01F(TE85L,F) HN1D01F_datasheet_en_20210625.pdf?did=3439&prodName=HN1D01F
HN1D01F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SM6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SM6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1SS301,LF docget.jsp?did=3294&prodName=1SS301
1SS301,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC-70
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 5820 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
59+0.36 EUR
96+0.21 EUR
156+0.13 EUR
500+0.099 EUR
1000+0.087 EUR
Mindestbestellmenge: 59 Stücke
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HN1D02F(TE85L,F) HN1D02F_datasheet_en_20210625.pdf?did=3617&prodName=HN1D02F
HN1D02F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SM6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SM6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HN1D02FU(T5L,F,T) HN1D02FU_datasheet_en_20210625.pdf?did=3455&prodName=HN1D02FU
HN1D02FU(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA ES6
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: ES6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN1703JE(TE85L,F) RN1701JE_datasheet_en_20140301.pdf?did=19121&prodName=RN1701JE
RN1703JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA ESV
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 1813 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
50+0.43 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.18 EUR
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RN1704JE(TE85L,F) RN1701JE_datasheet_en_20140301.pdf?did=19121&prodName=RN1701JE
RN1704JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1705JE(TE85L,F) docget.jsp?did=19121&prodName=RN1701JE
RN1705JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
31+0.68 EUR
100+0.38 EUR
500+0.25 EUR
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RN1508(TE85L,F) docget.jsp?did=18805&prodName=RN1508
RN1508(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Supplier Device Package: SMV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 2486 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
46+0.45 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 29 Stücke
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RN1509(TE85L,F) docget.jsp?did=18805&prodName=RN1508
RN1509(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
auf Bestellung 2765 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
31+0.69 EUR
100+0.39 EUR
500+0.26 EUR
1000+0.2 EUR
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RN1511(TE85L,F) docget.jsp?did=18807&prodName=RN1510
RN1511(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA SMV
Supplier Device Package: SMV
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 4175 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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RN2701JE(TE85L,F) docget.jsp?did=19089&prodName=RN2705JE
RN2701JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 3695 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
29+0.75 EUR
100+0.43 EUR
500+0.29 EUR
1000+0.21 EUR
2000+0.19 EUR
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RN2703JE(TE85L,F) docget.jsp?did=19089&prodName=RN2705JE
RN2703JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 31420 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
30+0.71 EUR
100+0.4 EUR
500+0.26 EUR
1000+0.2 EUR
2000+0.18 EUR
Mindestbestellmenge: 22 Stücke
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RN2704JE(TE85L,F) docget.jsp?did=19089&prodName=RN2705JE
RN2704JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
auf Bestellung 3996 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
30+0.7 EUR
100+0.39 EUR
500+0.26 EUR
1000+0.2 EUR
2000+0.18 EUR
Mindestbestellmenge: 23 Stücke
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RN2705JE(TE85L,F) docget.jsp?did=19089&prodName=RN2705JE
RN2705JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
29+0.74 EUR
100+0.42 EUR
500+0.27 EUR
1000+0.21 EUR
2000+0.19 EUR
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RN2707JE(TE85L,F) RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE
RN2707JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 1645 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
29+0.75 EUR
100+0.43 EUR
500+0.29 EUR
1000+0.21 EUR
Mindestbestellmenge: 21 Stücke
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RN2708JE(TE85L,F) RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE
RN2708JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
29+0.75 EUR
100+0.43 EUR
500+0.29 EUR
1000+0.21 EUR
2000+0.19 EUR
Mindestbestellmenge: 21 Stücke
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RN2709JE(TE85L,F) RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE
RN2709JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
29+0.73 EUR
100+0.4 EUR
500+0.27 EUR
1000+0.21 EUR
2000+0.18 EUR
Mindestbestellmenge: 22 Stücke
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RN2710JE(TE85L,F) docget.jsp?did=19108&prodName=RN2711JE
RN2710JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
auf Bestellung 3611 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
30+0.7 EUR
100+0.39 EUR
500+0.26 EUR
1000+0.2 EUR
2000+0.18 EUR
Mindestbestellmenge: 23 Stücke
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RN2711JE(TE85L,F) docget.jsp?did=19108&prodName=RN2711JE
RN2711JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 3900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
29+0.73 EUR
100+0.4 EUR
500+0.27 EUR
1000+0.21 EUR
2000+0.18 EUR
Mindestbestellmenge: 22 Stücke
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RN2712JE(TE85L,F) docget.jsp?did=565&prodName=RN2713JE
RN2712JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
29+0.73 EUR
100+0.4 EUR
500+0.27 EUR
1000+0.21 EUR
2000+0.18 EUR
Mindestbestellmenge: 22 Stücke
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RN2713JE(TE85L,F) docget.jsp?did=565&prodName=RN2713JE
RN2713JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 3980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
29+0.73 EUR
100+0.4 EUR
500+0.27 EUR
1000+0.21 EUR
2000+0.18 EUR
Mindestbestellmenge: 22 Stücke
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RN2504(TE85L,F) docget.jsp?did=18887&prodName=RN2501
RN2504(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Part Status: Active
Supplier Device Package: SMV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 247 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
29+0.75 EUR
100+0.43 EUR
Mindestbestellmenge: 21 Stücke
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RN2507(TE85L,F) RN2507-09.pdf
RN2507(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
auf Bestellung 1015 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
30+0.7 EUR
100+0.39 EUR
500+0.26 EUR
1000+0.2 EUR
Mindestbestellmenge: 23 Stücke
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RN2510(TE85L,F) RN2510_datasheet_en_20191121.pdf?did=18892&prodName=RN2510
RN2510(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA SMV
Part Status: Active
Supplier Device Package: SMV
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 30 Stücke
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RN2511(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2510
RN2511(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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RN4981FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4981FE
RN4981FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4982FE,LF(CT docget.jsp?did=19043&prodName=RN4982FE
RN4982FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 3250 Stücke:
Lieferzeit 10-14 Tag (e)
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RN4983FE,LF(CT RN4983FE_datasheet_en_20210818.pdf?did=19045&prodName=RN4983FE
RN4983FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 3991 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
80+0.26 EUR
129+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.093 EUR
Mindestbestellmenge: 48 Stücke
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RN4984FE,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN4984FE
RN4984FE,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 7800 Stücke:
Lieferzeit 10-14 Tag (e)
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RN4985FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4985FE
RN4985FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4987FE(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4987FE
RN4987FE(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN/ PNP 50V 100MA ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4988FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4988FE
RN4988FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4989FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4989FE
RN4989FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4990FE(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4990FE
RN4990FE(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
Produkt ist nicht verfügbar
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RN4991FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4991FE
RN4991FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN1902FE,LF(CT docget.jsp?did=19130&prodName=RN1902FE
RN1902FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 112 Stücke:
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RN1903FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1902FE
RN1903FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN1904FE,LF(CT docget.jsp?did=19130&prodName=RN1904FE
RN1904FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 893 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
42+0.51 EUR
100+0.29 EUR
500+0.19 EUR
Mindestbestellmenge: 32 Stücke
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RN1905FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1905FE
RN1905FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN ES6 50V 100A
Produkt ist nicht verfügbar
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RN1906FE(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1902FE
RN1906FE(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN1907FE,LF(CT RN1909FE_datasheet_en_20210818.pdf?did=19126&prodName=RN1909FE
RN1907FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 5722 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
44+0.48 EUR
73+0.29 EUR
118+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
Mindestbestellmenge: 44 Stücke
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RN1908FE(TE85L,F) docget.jsp?did=19126&prodName=RN1909FE
RN1908FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RN1909FE(TE85L,F) docget.jsp?did=19126&prodName=RN1909FE
RN1909FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 3950 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
40+0.52 EUR
100+0.3 EUR
500+0.2 EUR
1000+0.15 EUR
2000+0.13 EUR
Mindestbestellmenge: 31 Stücke
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RN1910FE(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1911FE
RN1910FE(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 1915 Stücke:
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RN1967FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1967FE
RN1967FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN1968FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1967FE
RN1968FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN1969FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1967FE
RN1969FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN1970FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1970FE
RN1970FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN1971FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1970FE
RN1971FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN1601(TE85L,F) docget.jsp?did=18809&prodName=RN1601
RN1601(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
auf Bestellung 2602 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
30+0.71 EUR
100+0.4 EUR
500+0.26 EUR
1000+0.2 EUR
Mindestbestellmenge: 23 Stücke
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RN1604(TE85L,F) docget.jsp?did=18809&prodName=RN1601
RN1604(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
auf Bestellung 1668 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1608(TE85L,F) docget.jsp?did=18811&prodName=RN1607
RN1608(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
auf Bestellung 2758 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 30 Stücke
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RN1609(TE85L,F) docget.jsp?did=18811&prodName=RN1607
RN1609(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
auf Bestellung 2935 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 30 Stücke
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RN1610(TE85L,F) docget.jsp?did=18815&prodName=RN1610
RN1610(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Supplier Device Package: SM6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
auf Bestellung 1240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 30 Stücke
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RN1611(TE85L,F) docget.jsp?did=18815&prodName=RN1610
RN1611(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
auf Bestellung 2059 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.05 EUR
27+0.77 EUR
100+0.44 EUR
500+0.29 EUR
1000+0.23 EUR
Mindestbestellmenge: 20 Stücke
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RN1673(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1673
RN1673(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Produkt ist nicht verfügbar
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RN1905(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1905
RN1905(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 2965 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1908(T5L,F,T) docget.jsp?did=18826&prodName=RN1908
RN1908(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
auf Bestellung 2986 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
45+0.46 EUR
100+0.24 EUR
500+0.19 EUR
1000+0.14 EUR
Mindestbestellmenge: 32 Stücke
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RN1909(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1907
RN1909(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
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