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RN1116(TE85L,F) RN1116(TE85L,F) Toshiba Semiconductor and Storage RN1116_datasheet_en_20210830.pdf?did=18763&prodName=RN1116 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
HN1A01FE-GR,LF HN1A01FE-GR,LF Toshiba Semiconductor and Storage HN1A01FE_datasheet_en_20210818.pdf?did=22309&prodName=HN1A01FE Description: TRANS 2PNP 50V 0.15A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar
HN1A01FE-Y(T5L,F,T Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN1A01FE Description: TRAN DUAL PNP -50V -0.15A ES6
Produkt ist nicht verfügbar
HN2A01FE-GR(TE85LF HN2A01FE-GR(TE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN2A01FE Description: TRANS 2PNP 50V 0.15A ES6
Produkt ist nicht verfügbar
HN2A01FE-Y(TE85L,F HN2A01FE-Y(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN2A01FE Description: TRANS 2PNP 50V 0.15A ES6
Produkt ist nicht verfügbar
2SA1618-Y(TE85L,F) 2SA1618-Y(TE85L,F) Toshiba Semiconductor and Storage 2SA1618_datasheet_en_20210625.pdf?did=19176&prodName=2SA1618 Description: TRANS 2PNP 50V 0.15A SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Part Status: Active
Produkt ist nicht verfügbar
2SA1587-BL,LF 2SA1587-BL,LF Toshiba Semiconductor and Storage 2SA1587_datasheet_en_20221102.pdf?did=19172&prodName=2SA1587 Description: TRANS PNP 120V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.11 EUR
6000+ 0.099 EUR
Mindestbestellmenge: 3000
2SA1182-GR(TE85L,F 2SA1182-GR(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=2SA1182 Description: TRANS PNP 30V 0.5A S-MINI
Produkt ist nicht verfügbar
2SA1182-O(TE85L,F) 2SA1182-O(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=2SA1182 Description: TRANS PNP 30V 0.5A S-MINI
Produkt ist nicht verfügbar
RN2101CT(TPL3) RN2101CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2101CT Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
RN2102CT(TPL3) RN2102CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=731&prodName=RN2101CT Description: TRANS PREBIAS PNP 20V 0.05A CST3
Produkt ist nicht verfügbar
RN2103CT(TPL3) RN2103CT(TPL3) Toshiba Semiconductor and Storage RN2101CT-06CT.pdf Description: TRANS PREBIAS PNP 20V 0.05A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 50 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
RN2104CT(TPL3) RN2104CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=731&prodName=RN2101CT Description: TRANS PREBIAS PNP 20V 0.05A CST3
Produkt ist nicht verfügbar
RN2105CT(TPL3) RN2105CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=731&prodName=RN2101CT Description: TRANS PREBIAS PNP 20V 0.05A CST3
Produkt ist nicht verfügbar
RN2106CT(TPL3) RN2106CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2101CT Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
RN2107CT(TPL3) RN2107CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=735&prodName=RN2107CT Description: TRANS PREBIAS PNP 20V 0.05A CST3
Produkt ist nicht verfügbar
RN2108CT(TPL3) RN2108CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2107CT Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
RN2109CT(TPL3) RN2109CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2107CT Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
RN2110CT(TPL3) RN2110CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2110CT Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
RN2111CT(TPL3) RN2111CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2110CT Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
RN2112CT(TPL3) RN2112CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2112CT Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
RN2113CT(TPL3) RN2113CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2112CT Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
RN2101ACT(TPL3) RN2101ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
RN2102ACT(TPL3) RN2102ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Produkt ist nicht verfügbar
RN2103ACT(TPL3) RN2103ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
10000+0.14 EUR
Mindestbestellmenge: 10000
RN2104ACT(TPL3) RN2104ACT(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=730&prodName=RN2104ACT Description: TRANS PREBIAS PNP 50V 0.08A CST3
Produkt ist nicht verfügbar
RN2105ACT(TPL3) RN2105ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
10000+0.14 EUR
Mindestbestellmenge: 10000
RN2106ACT(TPL3) RN2106ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
10000+0.14 EUR
Mindestbestellmenge: 10000
RN2108ACT(TPL3) RN2108ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
RN2109ACT(TPL3) RN2109ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
RN2110ACT(TPL3) RN2110ACT(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=737&prodName=RN2110ACT Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
10000+0.14 EUR
Mindestbestellmenge: 10000
RN2111ACT(TPL3) RN2111ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 10 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
10000+0.12 EUR
Mindestbestellmenge: 10000
RN2112ACT(TPL3) RN2112ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
10000+0.12 EUR
Mindestbestellmenge: 10000
RN2113ACT(TPL3) RN2113ACT(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=740&prodName=RN2112ACT Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
10000+0.13 EUR
Mindestbestellmenge: 10000
RN2409(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2409 Description: TRAN PNP S-MINI -50V -100A
Produkt ist nicht verfügbar
RN2101,LF(CT RN2101,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2101 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
RN2103(T5L,F,T) RN2103(T5L,F,T) Toshiba Semiconductor and Storage RN2101_datasheet_en_20220913.pdf?did=18841&prodName=RN2101 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
RN2104(T5L,F,T) RN2104(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2101 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
RN2105(T5L,F,T) RN2105(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2105 Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
RN2106(T5L,F,T) RN2106(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2101 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
RN2107(T5L,F,T) RN2107(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2107 Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
RN2108(T5L,F,T) RN2108(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2107 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
RN2109(T5L,F,T) RN2109(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2107 Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
RN2110(T5L,F,T) RN2110(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2110 Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
RN2111(T5L,F,T) RN2111(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2111 Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
RN2112(T5L,F,T) RN2112(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2112 Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
RN2113(T5L,F,T) RN2113(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2112 Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
RN2114(TE85L,F) RN2114(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2114 Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
RN2115(T5L,F,T) RN2115(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2115 Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
RN2116(T5L,F,T) RN2116(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2116 Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
RN2117(T5L,F,T) RN2117(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2114 Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
RN2118(T5L,F,T) RN2118(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2114 Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
HN1B04F(TE85L,F) HN1B04F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=22325&prodName=HN1B04F Description: TRANS NPN/PNP 30V 0.5A SM6
Produkt ist nicht verfügbar
HN1B04FE-GR,LF HN1B04FE-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=22308&prodName=HN1B04FE Description: TRANS NPN/PNP 50V 0.15A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+0.14 EUR
Mindestbestellmenge: 4000
HN1B04FE-Y,LF HN1B04FE-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=22308&prodName=HN1B04FE Description: TRANS NPN/PNP 50V 0.15A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar
HN1B01FU-Y(L,F,T) HN1B01FU-Y(L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=19148&prodName=HN1B01FU Description: TRANS NPN/PNP 50V 0.15A US6
Produkt ist nicht verfügbar
HN1B04FU-Y(T5L,F,T HN1B04FU-Y(T5L,F,T Toshiba Semiconductor and Storage docget.jsp?did=19150&prodName=HN1B04FU Description: TRANS NPN/PNP 50V 0.15A US6
Produkt ist nicht verfügbar
RN1701JE(TE85L,F) RN1701JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19121&prodName=RN1701JE Description: TRANS 2NPN PREBIAS 0.1W ESV
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+0.21 EUR
8000+ 0.19 EUR
Mindestbestellmenge: 4000
2SC5096-O,LF 2SC5096-O,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=2SC5096 Description: TRANS RF NPN 10V 1GHZ SSM
Produkt ist nicht verfügbar
2SC5096-R,LF 2SC5096-R,LF Toshiba Semiconductor and Storage Description: RF TRANS NPN 10V 10GHZ SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 1.4dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Supplier Device Package: SSM
Part Status: Obsolete
Produkt ist nicht verfügbar
RN1116(TE85L,F) RN1116_datasheet_en_20210830.pdf?did=18763&prodName=RN1116
RN1116(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
HN1A01FE-GR,LF HN1A01FE_datasheet_en_20210818.pdf?did=22309&prodName=HN1A01FE
HN1A01FE-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar
HN1A01FE-Y(T5L,F,T docget.jsp?type=datasheet&lang=en&pid=HN1A01FE
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL PNP -50V -0.15A ES6
Produkt ist nicht verfügbar
HN2A01FE-GR(TE85LF docget.jsp?type=datasheet&lang=en&pid=HN2A01FE
HN2A01FE-GR(TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A ES6
Produkt ist nicht verfügbar
HN2A01FE-Y(TE85L,F docget.jsp?type=datasheet&lang=en&pid=HN2A01FE
HN2A01FE-Y(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A ES6
Produkt ist nicht verfügbar
2SA1618-Y(TE85L,F) 2SA1618_datasheet_en_20210625.pdf?did=19176&prodName=2SA1618
2SA1618-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Part Status: Active
Produkt ist nicht verfügbar
2SA1587-BL,LF 2SA1587_datasheet_en_20221102.pdf?did=19172&prodName=2SA1587
2SA1587-BL,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
6000+ 0.099 EUR
Mindestbestellmenge: 3000
2SA1182-GR(TE85L,F docget.jsp?type=datasheet&lang=en&pid=2SA1182
2SA1182-GR(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A S-MINI
Produkt ist nicht verfügbar
2SA1182-O(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=2SA1182
2SA1182-O(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A S-MINI
Produkt ist nicht verfügbar
RN2101CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=RN2101CT
RN2101CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
RN2102CT(TPL3) docget.jsp?did=731&prodName=RN2101CT
RN2102CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 20V 0.05A CST3
Produkt ist nicht verfügbar
RN2103CT(TPL3) RN2101CT-06CT.pdf
RN2103CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 20V 0.05A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 50 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
RN2104CT(TPL3) docget.jsp?did=731&prodName=RN2101CT
RN2104CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 20V 0.05A CST3
Produkt ist nicht verfügbar
RN2105CT(TPL3) docget.jsp?did=731&prodName=RN2101CT
RN2105CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 20V 0.05A CST3
Produkt ist nicht verfügbar
RN2106CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=RN2101CT
RN2106CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
RN2107CT(TPL3) docget.jsp?did=735&prodName=RN2107CT
RN2107CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 20V 0.05A CST3
Produkt ist nicht verfügbar
RN2108CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=RN2107CT
RN2108CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
RN2109CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=RN2107CT
RN2109CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
RN2110CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=RN2110CT
RN2110CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
RN2111CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=RN2110CT
RN2111CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
RN2112CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=RN2112CT
RN2112CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
RN2113CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=RN2112CT
RN2113CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
Produkt ist nicht verfügbar
RN2101ACT(TPL3)
RN2101ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
RN2102ACT(TPL3)
RN2102ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Produkt ist nicht verfügbar
RN2103ACT(TPL3)
RN2103ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10000+0.14 EUR
Mindestbestellmenge: 10000
RN2104ACT(TPL3) docget.jsp?did=730&prodName=RN2104ACT
RN2104ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Produkt ist nicht verfügbar
RN2105ACT(TPL3)
RN2105ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10000+0.14 EUR
Mindestbestellmenge: 10000
RN2106ACT(TPL3)
RN2106ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10000+0.14 EUR
Mindestbestellmenge: 10000
RN2108ACT(TPL3)
RN2108ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
RN2109ACT(TPL3)
RN2109ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
RN2110ACT(TPL3) docget.jsp?did=737&prodName=RN2110ACT
RN2110ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10000+0.14 EUR
Mindestbestellmenge: 10000
RN2111ACT(TPL3)
RN2111ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 10 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10000+0.12 EUR
Mindestbestellmenge: 10000
RN2112ACT(TPL3)
RN2112ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10000+0.12 EUR
Mindestbestellmenge: 10000
RN2113ACT(TPL3) docget.jsp?did=740&prodName=RN2112ACT
RN2113ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10000+0.13 EUR
Mindestbestellmenge: 10000
RN2409(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2409
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN PNP S-MINI -50V -100A
Produkt ist nicht verfügbar
RN2101,LF(CT docget.jsp?did=18841&prodName=RN2101
RN2101,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
RN2103(T5L,F,T) RN2101_datasheet_en_20220913.pdf?did=18841&prodName=RN2101
RN2103(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
RN2104(T5L,F,T) docget.jsp?did=18841&prodName=RN2101
RN2104(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
RN2105(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2105
RN2105(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
RN2106(T5L,F,T) docget.jsp?did=18841&prodName=RN2101
RN2106(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
RN2107(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2107
RN2107(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
RN2108(T5L,F,T) docget.jsp?did=18845&prodName=RN2107
RN2108(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
RN2109(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2107
RN2109(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
RN2110(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2110
RN2110(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
RN2111(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2111
RN2111(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
RN2112(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2112
RN2112(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
RN2113(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2112
RN2113(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
RN2114(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2114
RN2114(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
RN2115(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2115
RN2115(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
RN2116(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2116
RN2116(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN PNP SSM -50V -100A
Produkt ist nicht verfügbar
RN2117(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2114
RN2117(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
RN2118(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2114
RN2118(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W SSM
Produkt ist nicht verfügbar
HN1B04F(TE85L,F) docget.jsp?did=22325&prodName=HN1B04F
HN1B04F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 30V 0.5A SM6
Produkt ist nicht verfügbar
HN1B04FE-GR,LF docget.jsp?did=22308&prodName=HN1B04FE
HN1B04FE-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+0.14 EUR
Mindestbestellmenge: 4000
HN1B04FE-Y,LF docget.jsp?did=22308&prodName=HN1B04FE
HN1B04FE-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar
HN1B01FU-Y(L,F,T) docget.jsp?did=19148&prodName=HN1B01FU
HN1B01FU-Y(L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A US6
Produkt ist nicht verfügbar
HN1B04FU-Y(T5L,F,T docget.jsp?did=19150&prodName=HN1B04FU
HN1B04FU-Y(T5L,F,T
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A US6
Produkt ist nicht verfügbar
RN1701JE(TE85L,F) docget.jsp?did=19121&prodName=RN1701JE
RN1701JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+0.21 EUR
8000+ 0.19 EUR
Mindestbestellmenge: 4000
2SC5096-O,LF docget.jsp?type=datasheet&lang=en&pid=2SC5096
2SC5096-O,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS RF NPN 10V 1GHZ SSM
Produkt ist nicht verfügbar
2SC5096-R,LF
2SC5096-R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 10GHZ SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 1.4dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Supplier Device Package: SSM
Part Status: Obsolete
Produkt ist nicht verfügbar
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