Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13020) > Seite 72 nach 217
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
RN2704JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.1W ESV |
auf Bestellung 3996 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN2705JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.1W ESV |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN2707JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESV Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ESV Part Status: Active |
auf Bestellung 1645 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN2708JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESV Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ESV Part Status: Active |
auf Bestellung 2990 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN2709JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESV Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: ESV Part Status: Active |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN2710JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.1W ESV |
auf Bestellung 3611 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN2711JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESV Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Supplier Device Package: ESV Part Status: Active |
auf Bestellung 3900 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN2712JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESV Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 22kOhms Supplier Device Package: ESV Part Status: Active |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN2713JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESV Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 47kOhms Supplier Device Package: ESV Part Status: Active |
auf Bestellung 3980 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN2504(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.3W SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SMV Part Status: Active |
auf Bestellung 247 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN2507(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.3W SMV |
auf Bestellung 1015 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN2510(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.3W SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: SMV Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN2511(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.3W SMV |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
RN4981FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRAN DUAL NPN/PNP 50V 100MA ES6 |
Produkt ist nicht verfügbar |
||||||||||||||
RN4982FE,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.1W ES6 |
auf Bestellung 3250 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
RN4983FE,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.1W ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: ES6 |
auf Bestellung 3900 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN4984FE,LF(CB | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.1W ES6 |
auf Bestellung 7800 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
RN4985FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
||||||||||||||
RN4987FE(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRAN DUAL NPN/ PNP 50V 100MA ES6 |
Produkt ist nicht verfügbar |
||||||||||||||
RN4988FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
||||||||||||||
RN4989FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
||||||||||||||
RN4990FE(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRAN DUAL NPN/PNP 50V 100MA ES6 |
Produkt ist nicht verfügbar |
||||||||||||||
RN4991FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
||||||||||||||
RN1902FE,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ES6 |
auf Bestellung 112 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
RN1903FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
||||||||||||||
RN1904FE,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ES6 |
auf Bestellung 893 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN1905FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRAN DUAL NPN ES6 50V 100A |
Produkt ist nicht verfügbar |
||||||||||||||
RN1906FE(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
||||||||||||||
RN1907FE,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.1W ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active |
Produkt ist nicht verfügbar |
||||||||||||||
RN1908FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.1W ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 |
Produkt ist nicht verfügbar |
||||||||||||||
RN1909FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ES6 |
auf Bestellung 3950 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN1910FE(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ES6 |
auf Bestellung 1915 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
RN1967FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
||||||||||||||
RN1968FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
||||||||||||||
RN1969FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
||||||||||||||
RN1970FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
||||||||||||||
RN1971FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
||||||||||||||
RN1601(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.3W SM6 |
auf Bestellung 2602 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN1604(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.3W SM6 |
auf Bestellung 1668 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
RN1608(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.3W SM6 |
auf Bestellung 2891 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN1609(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.3W SM6 |
auf Bestellung 2965 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN1610(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.3W SM6 |
auf Bestellung 1310 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN1611(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.3W SM6 |
auf Bestellung 2059 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN1673(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.3W SM6 |
Produkt ist nicht verfügbar |
||||||||||||||
RN1905(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.2W US6 |
auf Bestellung 2965 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
RN1908(T5L,F,T) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.2W US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 |
auf Bestellung 2986 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN1909(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.2W US6 |
auf Bestellung 2960 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
RN1910,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W US6 |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
RN1911(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W US6 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
RN1961(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.2W US6 |
auf Bestellung 2084 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
RN1963(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.2W US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: US6 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN1965(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.2W US6 |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
RN1968(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.2W US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN1970(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.2W US6 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
RN1973(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.2W US6 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
RN47A3JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.1W ESV |
Produkt ist nicht verfügbar |
||||||||||||||
RN2901FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: ES6 |
auf Bestellung 1280 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN2902FE(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
||||||||||||||
RN2903FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: ES6 Part Status: Active |
auf Bestellung 3450 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
RN2904FE(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
RN2704JE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Description: TRANS 2PNP PREBIAS 0.1W ESV
auf Bestellung 3996 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 1.17 EUR |
30+ | 0.87 EUR |
100+ | 0.49 EUR |
500+ | 0.33 EUR |
1000+ | 0.25 EUR |
2000+ | 0.22 EUR |
RN2705JE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Description: TRANS 2PNP PREBIAS 0.1W ESV
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 1.25 EUR |
29+ | 0.92 EUR |
100+ | 0.52 EUR |
500+ | 0.35 EUR |
1000+ | 0.27 EUR |
2000+ | 0.23 EUR |
RN2707JE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 1645 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 1.25 EUR |
29+ | 0.93 EUR |
100+ | 0.52 EUR |
500+ | 0.35 EUR |
1000+ | 0.27 EUR |
RN2708JE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 2990 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 1.25 EUR |
29+ | 0.93 EUR |
100+ | 0.52 EUR |
500+ | 0.35 EUR |
1000+ | 0.27 EUR |
2000+ | 0.23 EUR |
RN2709JE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ESV
Part Status: Active
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 1.22 EUR |
29+ | 0.9 EUR |
100+ | 0.51 EUR |
500+ | 0.34 EUR |
1000+ | 0.26 EUR |
2000+ | 0.22 EUR |
RN2710JE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Description: TRANS 2PNP PREBIAS 0.1W ESV
auf Bestellung 3611 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 1.17 EUR |
30+ | 0.87 EUR |
100+ | 0.49 EUR |
500+ | 0.33 EUR |
1000+ | 0.25 EUR |
2000+ | 0.22 EUR |
RN2711JE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 3900 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 1.22 EUR |
29+ | 0.9 EUR |
100+ | 0.51 EUR |
500+ | 0.34 EUR |
1000+ | 0.26 EUR |
2000+ | 0.22 EUR |
RN2712JE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Supplier Device Package: ESV
Part Status: Active
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 1.22 EUR |
29+ | 0.9 EUR |
100+ | 0.51 EUR |
500+ | 0.34 EUR |
1000+ | 0.26 EUR |
2000+ | 0.22 EUR |
RN2713JE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Supplier Device Package: ESV
Part Status: Active
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 3980 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 1.22 EUR |
29+ | 0.9 EUR |
100+ | 0.51 EUR |
500+ | 0.34 EUR |
1000+ | 0.26 EUR |
2000+ | 0.22 EUR |
RN2504(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
Part Status: Active
Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
Part Status: Active
auf Bestellung 247 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 1.25 EUR |
29+ | 0.93 EUR |
100+ | 0.52 EUR |
RN2507(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Description: TRANS 2PNP PREBIAS 0.3W SMV
auf Bestellung 1015 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 1.17 EUR |
30+ | 0.87 EUR |
100+ | 0.49 EUR |
500+ | 0.33 EUR |
1000+ | 0.25 EUR |
RN2510(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SMV
Part Status: Active
Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SMV
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 1.09 EUR |
35+ | 0.76 EUR |
100+ | 0.38 EUR |
500+ | 0.31 EUR |
1000+ | 0.23 EUR |
RN2511(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Description: TRANS 2PNP PREBIAS 0.3W SMV
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)RN4981FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
Produkt ist nicht verfügbar
RN4982FE,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 3250 Stücke:
Lieferzeit 21-28 Tag (e)RN4983FE,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
auf Bestellung 3900 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 0.65 EUR |
61+ | 0.43 EUR |
124+ | 0.21 EUR |
500+ | 0.18 EUR |
1000+ | 0.12 EUR |
2000+ | 0.11 EUR |
RN4984FE,LF(CB |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 7800 Stücke:
Lieferzeit 21-28 Tag (e)RN4985FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN4987FE(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN/ PNP 50V 100MA ES6
Description: TRAN DUAL NPN/ PNP 50V 100MA ES6
Produkt ist nicht verfügbar
RN4988FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN4989FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN4990FE(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
Produkt ist nicht verfügbar
RN4991FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1902FE,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 112 Stücke:
Lieferzeit 21-28 Tag (e)RN1903FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1904FE,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 893 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 0.83 EUR |
42+ | 0.63 EUR |
100+ | 0.36 EUR |
500+ | 0.24 EUR |
RN1905FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN ES6 50V 100A
Description: TRAN DUAL NPN ES6 50V 100A
Produkt ist nicht verfügbar
RN1906FE(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1907FE,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar
RN1908FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Produkt ist nicht verfügbar
RN1909FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 3950 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
31+ | 0.86 EUR |
40+ | 0.65 EUR |
100+ | 0.37 EUR |
500+ | 0.24 EUR |
1000+ | 0.19 EUR |
2000+ | 0.16 EUR |
RN1910FE(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 1915 Stücke:
Lieferzeit 21-28 Tag (e)RN1967FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1968FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1969FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1970FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1971FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1601(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Description: TRANS 2NPN PREBIAS 0.3W SM6
auf Bestellung 2602 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 1.17 EUR |
30+ | 0.88 EUR |
100+ | 0.5 EUR |
500+ | 0.33 EUR |
1000+ | 0.25 EUR |
RN1604(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Description: TRANS 2NPN PREBIAS 0.3W SM6
auf Bestellung 1668 Stücke:
Lieferzeit 21-28 Tag (e)RN1608(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Description: TRANS 2NPN PREBIAS 0.3W SM6
auf Bestellung 2891 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.33 EUR |
27+ | 0.99 EUR |
100+ | 0.56 EUR |
500+ | 0.37 EUR |
1000+ | 0.29 EUR |
RN1609(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Description: TRANS 2NPN PREBIAS 0.3W SM6
auf Bestellung 2965 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.33 EUR |
27+ | 0.99 EUR |
100+ | 0.56 EUR |
500+ | 0.37 EUR |
1000+ | 0.29 EUR |
RN1610(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Description: TRANS 2NPN PREBIAS 0.3W SM6
auf Bestellung 1310 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.33 EUR |
27+ | 0.99 EUR |
100+ | 0.56 EUR |
500+ | 0.37 EUR |
1000+ | 0.29 EUR |
RN1611(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Description: TRANS 2NPN PREBIAS 0.3W SM6
auf Bestellung 2059 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.3 EUR |
27+ | 0.96 EUR |
100+ | 0.55 EUR |
500+ | 0.36 EUR |
1000+ | 0.28 EUR |
RN1673(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Description: TRANS 2NPN PREBIAS 0.3W SM6
Produkt ist nicht verfügbar
RN1905(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 2965 Stücke:
Lieferzeit 21-28 Tag (e)RN1908(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 2986 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 0.83 EUR |
45+ | 0.58 EUR |
100+ | 0.29 EUR |
500+ | 0.24 EUR |
1000+ | 0.18 EUR |
RN1909(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 2960 Stücke:
Lieferzeit 21-28 Tag (e)RN1910,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W US6
Description: TRANS 2NPN PREBIAS 0.1W US6
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)RN1911(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W US6
Description: TRANS 2NPN PREBIAS 0.1W US6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)RN1961(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 2084 Stücke:
Lieferzeit 21-28 Tag (e)RN1963(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 1.22 EUR |
29+ | 0.91 EUR |
100+ | 0.51 EUR |
500+ | 0.34 EUR |
1000+ | 0.26 EUR |
RN1965(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)RN1968(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 1.22 EUR |
29+ | 0.91 EUR |
100+ | 0.51 EUR |
500+ | 0.34 EUR |
1000+ | 0.26 EUR |
RN1970(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)RN1973(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)RN47A3JE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ESV
Description: TRANS NPN/PNP PREBIAS 0.1W ESV
Produkt ist nicht verfügbar
RN2901FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ES6
Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ES6
auf Bestellung 1280 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.94 EUR |
38+ | 0.69 EUR |
100+ | 0.39 EUR |
500+ | 0.26 EUR |
1000+ | 0.2 EUR |
RN2902FE(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN2903FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Part Status: Active
Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3450 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 0.83 EUR |
45+ | 0.58 EUR |
100+ | 0.29 EUR |
500+ | 0.24 EUR |
1000+ | 0.18 EUR |
2000+ | 0.15 EUR |
RN2904FE(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar